United States
         Environmental Protection
         Agency
Office of Water
WH-552
Washington, DC 20460
EPA 440/1-83/075
March, 1983
                                            Final
SrEPA
        Development Document for
        Effluent Limitations Guidelines and
        Standards  for the

        Electrical and
        Electronic Components

        Point Source Category
        (Phase I)
                                         Ftoeyeted/R^yclabte
                                         Pnnled on paper inat contain*
                                         jil least 50% recycled fitwf

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           DEVELOPMENT DOCUMENT

                   for

     EFFLUENT LIMITATIONS GUIDELINES

                 for the

   ELECTRICAL AND ELECTRONIC COMPONENTS
          POINT SOURCE CATEGORY

                 PHASE I

          William D. Ruckelshaus
        Administrator (Designate)

             Steven Schatzow
                 Director
Office of Water Regulations and Standards
                         Ul
                         O
      Jeffery Denit. Acting Director
       Effluent Guidelines Division

         G. Edward Stigall. Chief
        Inorganic Chemicals Branch

              Richard Kinch
             Project Officer

               David Pepson
        Technical Project Monitor
              APRIL 21. 1983
   U.S. Environmental Protection Agency
             Office of Water
Office of Water Regulations and Standards
       Effluent Guidelines Division
         Washington. D.C.  20460

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                            TABLE OF CONTENTS

SECTION                       TITLE                              PAGE

       EXECUTIVE SUMMARY                                            1
       CONCLUSIONS                                                  1
       EFFLUENT LIMITATIONS AND STANDARDS                           1

  1    INTRODUCTION                                               1-1
       1.1  ORGANIZATION AND CONTENT OF THIS DOCUMENT             1-1
       1.2  SOURCES OF INDUSTRY DATA

  2    LEGAL BACKGROUND                                           2-1
       2.1  PURPOSE AND AUTHORITY                                 2-1
       2.2  GENERAL CRITERIA FOR EFFLUENT LIMITATIONS             2-3
            2.2.1  BPT Effluent Limitations                       2-3
            2.2.2  BAT Effluent Limitations                       2-3
            2.2.3  BCT Effluent Limitations                       2-4
            2.2.4  New Source Performance Standards               2-5
            2.2.5  Pretreatment Standards For Existing Sources    2-5
            2.2.6  Pretreatment Standards For New Sources         2-6

  3    INDUSTRY SUBCATEGORIZATION                                 3-1
       3.1  E&EC CATEGORY DEVELOPMENT                             3-1
       3.2  RATIONALE FOR INDUSTRY SUBCATEGORIZATION              3-1
       3.3  SUBCATEGORY LISTING                                   3-1

  4    DESCRIPTION OF THE INDUSTRY                                4-1
       4.1  SEMICONDUCTORS                                        4-1
            4.1.1  Numbers Of Plants And Production Capacity      4-1
            4.1.2  Products                                       4-1
            4.1.3  Manufacturing Processes And Materials          4-2
       4.2  ELECTRONIC CRYSTALS                                   4-7
            4.2.1  Number Of Plants                               4-7
            4.2.2  Products                                       4-9
            4.2.3  Manufacturing Processes And Materials          4-11
       4.3  ELECTRON TUBES                                        4-16
       4.4  PHOSPHORESCENT COATINGS                               4-17
       4.5  CAPACITORS. FIXED                                     4-17
       4.6  CAPACITORS. FLUID-FILLED                              4-17
       4.7  CARBON AND GRAPHITE PRODUCTS                          4-18
       4.8  MICA PAPER                                            4-18
       4.9  INCANDESCENT LAMPS                                    4-19
       4.10 FLUORESCENT LAMPS                                     4-19

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                          TABLE OF  CONTENTS  (CONT)

SECTION                       TITLE                                PAGE

       4.11  FUEL CELLS                                            4-19
       4.12  MAGNETIC COATINGS                                     4-20
       4.13  RESISTORS                                             4-20
       4.14  TRANSFORMERS,  DRY                                     4-20
       4.15  TRANSFORMERS.  FLUID-FILLED                            4-21
       4.16  INSULATED DEVICES.  PLASTIC AND  PLASTIC  LAMINATED       4-21
       4.17  INSULATED WIRE AND CABLE.  NON-FERROUS                  4-21
       4.18  FERRITE  ELECTRONIC PARTS                               4-22
       4.19  MOTORS.  GENERATORS.  AND ALTERNATORS                    4-22
       4.20  RESISTANCE HEATERS                                    4-22
       4.21  SWITCHGEAR                                            4-22

  5    WASTEWATER CHARACTERISTICS                                  5-1
       5.1    SAMPLING AND ANALYTICAL PROGRAM                       5-1
             5.1.1  Pollutants Analyzed                            5-1
             5.1.2  Sampling Methodology                           5-2
             5.1.3 Analytical Methods                              5-2
       5.2    SEMICONDUCTORS                                        5-4
             5.2.1 Wastewater Flows                               5-4
             5.2.2 Wastewater Sources                              5-4
             5.2.3  Pollutants Found and Sources  of  These
                    Pollutants                                     5-4
       5.3    ELECTRONIC CRYSTALS                                   5-5
             5.3.1 Wastewater Flows                               5-5
             5.3.2 Wastewater Sources                              5-6
             5.3.3  Pollutants Found and the Sources of These
                    Pollutants                                     5-6
       5.4    CARBON AND GRAPHITE PRODUCTS                          5-7
       5.5    MICA PAPER                                            5-8
       5.6    INCANDESCENT LAMPS                                    5-8
       5.7    FLUORESCENT LAMPS                                     5-9
       5.8    FUEL CELLS                                            5-9
       5.9    MAGNETIC COATINGS                                     5-9
       5.10  RESISTORS                                             5-9
       5.11  DRY TRANSFORMERS                                      5-9
       5.12  ELECTRON TUBES                                        5-10
       5.13  PHOSPHORESCENT COATINGS                               5-10
       5.14  ALL OTHER SUBCATEGORIES                               5-10

   6   SUBCATEGORIES  AND POLLUTANTS TO  BE REGULATED.
       EXCLUDED OR DEFERRED                                        6-1
       6.1    SUBCATEGORIES TO BE REGULATED                         6-1
             6.1.1 Pollutants To Be Regulated                      6-1
       6.2    TOXIC POLLUTANTS AND SUBCATEGORIES NOT  REGULATED      6-3
             6.2.1  Exclusion of Pollutants                         6-3
             6.2.2  Exclusion of Subcategories                     6-5
       6.3    CONVENTIONAL POLLUTANTS NOT REGULATED                 6-6
       6.4    SUBCATEGORIES DEFERRED                                6-6
                                  11

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                         TABLE OF CONTENTS (CONT)

SECTION                       TITLE                               PAGE

  7        CONTROL AND TREATMENT TECHNOLOGY                        7-1
      7.1  CURRENT TREATMENT AND CONTROL PRACTICES                 7-1
           7.1.1 Semiconductor Subcategory                         7-1
           7.1.2 Electronic Crystals Subcategory                   7-2
      7.2  APPLICABLE TREATMENT TECHNOLOGIES                       7-2
           7.2.1 pH Control                                        7-2
           7.2.2 Fluoride Treatment                                7-3
           7.2.3 Arsenic Treatment                                 7-4
           7.2.4 Total Toxic Organics Treatment                    7-5
      7.3  TREATMENT AND CONTROL OPTIONS                           7-9

  8        SELECTION OF APPROPRIATE CONTROL AND TREATMENT
           TECHNOLOGIES AND BASES FOR LIMITATIONS                  8-1
      8.1  SEMICONDUCTOR SUBCATEGORY                               8-1
           8.1.1  Best Practicable Control Technology Currently
                  Available (BPT)                                  8-1
           8.1.2  Best Available Technolgoy Economically Available
                  (BAT)                                            8-4
           8.1.3  Best Conventional Pollutant Control Technology
                  (BCT)                                            8-5
           8.1.4  New Source Performance Standards (NSPS)          8-6
           8.1.5  Pretreatment Standards For New And Existing
                  Sources (PSNS AND PSES)                          8-6
      8.2  ELECTRONIC CRYSTALS SUBCATEGORY                         8-7
           8.2.1  Best Practicable Control Technology Currently
                  Available (BPT)                                  8-7
           8.2.2  Best Available Technology Economically
                  Achievable (BAT)                                 8-10
           8.2.3  Best Conventional Pollutant Control Technology
                  (BCT)                                            8-10
           8.2.4  New Source Performance Standards (NSPS)          8-11
           8.2.5  Pretreatment Standards For New And Existing
                  Sources (PSNS AND PSES)                          8-12
      8.3  STATISTICAL ANALYSIS                                    8-13
           8.3.1  Calculation Of Variability Factors               8-13
           8.3.2  Calculation Of Effluent Limitations              8-15

  9   COST OF WASTEWATER CONTROL AND TREATMENT                     9-1
      9.1  COST ESTIMATING METHODOLOGY                             9-1
           9.1.1  Direct Investment Costs For Land and Facilities  9-2
           9.1.2  Annual Costs                                     9-4
           9.1.3  Items Not Included In Cost Estimate              9-6
      9.2  COST ESTIMATES FOR TREATMENT AND CONTROL OPTIONS        9-7
           9.2.1  Option 1                                         9-7
           9.2.2  Option 2                                         9-8
           9.2.3  Option 3                                         9-8
           9.2.4  Option 4                                         9-8
      9.3  ENERGY AND NON-WATER QUALITY ASPECTS                    9-9
 10   ACKNOWLEDGEMENTS                                             10-1
 11   REFERENCES                                                   11-1
 12   GLOSSARY                                                     12-1

                                  iii

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                         LIST OF FIGURES
NUMBER                        TITLE                        PAGE


 4-1    Silicon Integrated Circuit Production              4-3

 4-2    Basic Manufacturing Process For Electronic
        Crystals                                           4-13

 9-1    Annual Cost vs. Flow For Option 2 Technology       9-13

 9-2    Annual cost vs. Flow for Option 3 Technology       9-15
                                   IV

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                         LIST OF TABLES

NUMBER                        TITLE                         PAGE

  1     BPT Proposed Regulations For Semiconductors           2
  2     BAT Proposed Regulations For Semiconductors           2
  3     BCT Proposed Regulations For Semiconductors           2
  4     NSPS Proposed Regulations For Semiconductors          2
  5     PSES AND PSNS Proposed Regulations For
        Semiconductors                                        3
  6     BPT Proposed Regulations For Electronic Crystals      3
  7     BAT Proposed Regulations For Electronic Crystals      3
  8     BCT Proposed Regulations For Electronic Crystals      4
  9     NSPS Proposed Regulations For Electronic
        Crystals                                              4
  10    PSNS AND PSES Proposed Regulations For
        Electronic Crystals                                   4
4-1     Profile of Electronic Crystals Industry             4-8
B-l     The Priority Pollutants                             5-11
5-2     Semiconductor Process Wastewater Flow,
        Average Plant                                       5-4
5-3     Semiconductor Summary of Raw Waste Data             5-13
5-4     Semiconductor Process Wastes, Plant 02040           5-15
5-5     Semiconductor Process Wastes, Plant 02347           5-19
5-6     Semiconductor Process Wastes. Plant 04294           5-21
5-7     Semiconductor Process Wastes, Plant O4296           5-27
5-8     Semiconductor Process Wastes. Plant 06143           5-29
5-9     Semiconductor Process Wastes. Plant 30167           5-38
5-10    Semiconductor Process Wastes, Plant 35035           5-46
5-11    Semiconductor Process Wastes, Plant 36133           5-50
5-12    Semiconductor Process Wastes,. Plant 36135           5-54
5-13    Semiconductor Process Wastes. Plant 36136           5-56
5-14    Semiconductor Process Wastes. Plant 41061           5-60
5-15    Semiconductor Process Wastes, Plant 42044           5-70
5-16    Summary of Wastewater Quantities Generated
        In The Electronic Crystals  Subcategory              5-6
5-17    Electronic Crystals  Summary of Raw Waste Data       5-74
                                  v

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                      LIST OF TABLES (CONT)

NUMBER                        TITLE          ,               PAGE

5-18    Results of Wastewater Analysis, Plant 301           5-75
5-19    Results of Wastewater Analysis, Plant 304           5-77
5-20    Results of Wastewater Analysis, Plant 380           5-79
5-21    Results of Analysis, Plant 401                      5-81
5-22    Results of Wastewater Analysis, Plant 402           5-83
5-23    Results of Analysis, Plant 403                      5-85
5-24    Results of Wastewater Analysis, Plant 404           5-89
5-25    Results of Wastewater Analysis, Plant 405           5-93
6-1     Pollutants Comprising Total Toxic Organics          6-4
6-2     Toxic Pollutants Not Detected                       6-7
7-1     Process Stream Contribution to Effluent TTO         7-10
7-2     Treatability of Toxic Organics Using Activated
        Carbon                                              7-12
8-1     BPT Limitations. Semiconductors                     8-1
8-2     Contribution of TTO From Process Wastewater Streams
        to Plant Effluent                                   8-3
8-3     BAT Limitations. Semiconductors                     8-4
8-4     Historical Performance Data Analysis of Effluent
        Fluoride With Hydroxide Precipitation/Clarifi-
        cation System                                       8-5
8-5     BCT Limitations. Semiconductors                     8-5
8-6     NSPS Limitations, Semiconductors                    8-6
8-7     PSES and PSNS Limitations, Semiconductors           8-6
8-8     BPT Limitations, Electronic Crystals                8-7
8-9     Historical Performance Data Analysis of Effluent
        Arsenic With Hydroxide Precipitation/Clarifi-
        cation                                              8-9
8-10    BAT Limitations, Electronic Crystals                8-10
8-11    BCT Limitations, Electronic Crystals                8-10
8-12    NSPS Limitations, Electronic Crystals               8-11
8-13    PSES and PSNS Limitations, Electronic
        Crystals                                            8-11
9-1     Treatment and Control Options Selected As Bases
        For Effluent Limitations                            9-7
9-2     Plant Monitoring Costs for Organics                 9-10
9-3     Incremental Cost of Solvent Disposal
        In Accordance With RCRA                             9-11
9-4     Model Plant Treatment Costs, Option 2               9-12
9-5     Model .Plant Treatment Costs, Option 3               9-14
9-6     Model Plant Treatment Costs. Option 5               9-16
                                  VI

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                          EXECUTIVE SUMMARY
CONCLUSIONS

A study of the Electrical and Electronic Components Industrial Point
Source Category was undertaken to establish discharge limitations
guidelines and standards.  The industry was subcategorized into 21
segments based on product type.  Of the 21 subcategories.  17 have
been excluded under Paragraph 8 of the NRDC Consent Decree, two are
the subject of the Phase II Electrical and Electronic Components
Proposed Rule, electron tubes and luminescent materials, and for the
remaining two subcategories regulations are being promulgated.  The
last two subcategories are Semiconductors and Electronic Crystals.

In the Semiconductor and Electronic Crystals subcategories.
pollutants of concern are fluoride, toxic organics. arsenic, and
total suspended solids.  The major source of fluoride is the use of
hydrofluoric acid as an etchant or cleaning agent.  Toxic organics
are associated with the use of solvents in cleaning and degreasing
operations and solvent based process chemicals.  Arsenic is only
found in significant concentrations at facilities that manufacture
gallium or indium arsenide crystals: it is present in the wastewater
as a result of the manufacturing process.  Suspended solids are only
found in significant concentrations at facilities that manufacture
crystals where the solids come from cutting and grinding operations.

Sex'eral treatment and control technologies applicable to the reduc-
tion of pollutants generated by the manufacture of semiconductors
and electronic crystals were evaluated, and the costs of these
technologies were estimated.  Pollutant concentrations achievable
through the implementation of these technologies were based on
industry data and transfer of performance assessments from
industries with similar waste characteristics.  These concentrations
are presented below as limitations and standards for the semi-
conductor and electronic crystals subcategories.

EFFLUENT LIMITATIONS AND STANDARDS

For both subcategories. Tables 1 through  10 present regulations for
Best Practicable Control Technology (BPT). Best Available Control
Technology (BAT). Best Conventional Polluant Control Technology
(BCT). New Source Performance Standards  (NSPS). and Pretreatment
Standards for New and Existing Sources  (PSNS and PSES).  All
limitations and standards are expressed as milligrams per  liter.

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          TABLE 1:  BPT REGULATIONS FOR SEMICONDUCTORS


                          24-hour      30-day
                          Maximum      Average
  Pollutant	         (mq/1)       (mq/1)        pH Range

Total Toxic Organics *      1.37         **

pH                                                     6-9



          TABLE 2:  BAT REGULATIONS FOR SEMICONDUCTORS


                          24-hour      30-day
                          Maximum      Average
  Pollutant	         (mq/1)       (mq/1)

Total Toxic Organics *      1.37         **

Fluoride                   32           17.4



          TABLE 3:  BCT REGULATIONS FOR SEMICONDUCTORS


                          24-hour      30-day
                          Maximum      Average
  Pollutant	         (mq/1)       (mq/1)        pH Range

  pH                                                   6-9


         TABLE 4:  NSPS REGULATIONS FOR.SEMICONDUCTORS


                          24-hour      30-day
                          Maximum      Average
  Pollutant	         (mq/1)       (mq/1)        pH Range

Total Toxic Organics *      1.37          **

Fluoride                   32            17.4

pH                                                     6-9


*  Total Toxic Organics is explained in Section 6.
** The Agency is not providing 30-day average limits for total
   toxic organics for reasons explained in Section 8.

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            TABLE 5:  PSES and PSNS REGULATIONS FOR
                         SEMICONDUCTORS
                          24-hour      30-day
                          Maximum      Average
  Pollutant	         (mq/.l.)       (mg/1)

Total Toxic Organics *      1.37         **
       TABLE 6:  BPT REGULATIONS FOR ELECTRONIC CRYSTALS
Pollutant
Total Toxic Organics *
Fluoride
Arsenic ***
TSS
pH
24-hour
Maximum
(ma/1)
1.37
32
2.09
61

30-day
Average
(ma/1)
**
17.4
0.83
23

pH Range



6-9
       TABLE 7:  BAT REGULATIONS FOR ELECTRONIC CRYSTALS

                          24-hour      30-day
                          Maximum      Average
  Pollutant	         (mq/1)       (roq/1)

Total Toxic Organics *      1.37         **

Fluoride                   32           17.4

Arsenic ***                 2.09         0.83
  * Total Toxic Organics is explained in Section 6.
 ** The Agency is not providing 30-day average limits for total
    toxic organics for reasons explained in Section 8.
*** The arsenic limitation applies only to discharges from
    gallium or indium arsenide crystals manufacturing operations

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                  TABLE  8.   BCT  REGULATIONS FOR
                      ELECTRONIC  CRYSTALS
Pollutant
TSS
pH
24-hour
Maximum
(ma/1)
61.0

30-day
Average
(ma/1)
23

pH Range
6-9
                 TABLE 9.  NSPS REGULATIONS FOR
                      ELECTRONIC CRYSTALS
Pollutant
Total Toxic
Fluoride
Arsenic ***
TSS
PH
24-hour
Maximum
(ma/1)
Organics * 1.37
32
2.09
61.0

30-day
Average
(ma/1) pH Ranae
**
17.4
0.83
23
6-9
TABLE 10: PSNS AND PSES REGULATIONS FOR
ELECTRONIC CRYSTALS
Pollutant
Total Toxic
Arsenic ***
24-hour
Maximum
(ma/1)
Organics * 1.37
2.09
30-day
Average
(ma/1)
**
0.83
  * Total Toxic Organics is explained in Section 6.
 ** The Agency is not providing 30-day average limits for total
    toxic organics for reasons explained in Section 8.
*** The arsenic limitation applies only to discharges from
    gallium or indium arsenide crystals manufacturing
operations.

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                             SECTION 1
                            INTRODUCTION
The purpose of this document is to present the findings of the EPA
study of the Electrical and Electronic Components (E&EC) Point
Source Category, Phase I.  The document (1) explains which
segments of the industry are regulated and which are not; (2)
discusses the reasons; and (3) explains how the actual limitations
were developed.  Section 1 describes the organization of the
document and reviews the sources of industry data that were used
to provide technical background for the limitations.

1.1  ORGANIZATION AND CONTENT OF THIS DOCUMENT

Industry data are used throughout this report in support of
regulating subcategories or excluding subcategories from
regulation under Paragraph 8 of the NRDC Consent Decree.
Telephone contacts, the literature, and plant visits provided the
information used to subcategorize the industry in Section 3.
These data were also considered in subcategorizing the industry in
Section 4. Description of the Industry.

Water use and wastewater characteristics in each subcategory are
described in Section 5 in terms of flow, pollutant concentration,
and load.  Subcategories to be regulated, or excluded, are found
in Section 6. The discussion in that section identifies and
describes the pollutants to be regulated or presents the rationale
for subcategory exclusion.  Section 7 describes the technology
options available.  The regulatory limits and the bases for these
limitations are presented in Section 8.  Section 9 estimates the
capital and operating costs for the treatment technologies used as
the basis for limitations.

1.2  SOURCES OF INDUSTRY DATA

Data on the E&EC category were gathered from literature studies,
contacts with 1PA regional offices, from plant surveys and
evaluations, and through contacting waste treatment equipment
manufacturers.  These data sources are discussed below.

Published literature in the form of books, reports, papers.
periodicals, promotional materials. Dunn and Bradstreet surveys.
and Department of Commerce Statistics was examined; the most
informative sources are listed in Section 11. References.  The
researched material included product descriptions and uses,
manufacturing
                                 1-1

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processes, raw materials consumed, waste treatment technology, and
the general characteristics of plants in the E&EC category.
including number of plants, employment levels, and production.

All 10 EPA offices were telephoned for assistance in identifying
E&EC plants in their respective regions.

Three types of data collection were used to supplement available
information pertaining to facilities in the E&EC category.  First.
more than 250 plants were contacted by phone or letter to obtain
basic information regarding products, manufacturing processes.
wastewater generation, and waste treatment. Second, based on this
information. 78 plants were visited to view their operations and
discuss their products, manufacturing processes, water use. and
wastewater treatment.  Third. 38 plants were selected for sampling
visits to determine the pollutant characteristics of their
wastewater.

The sampling program at each plant consisted of up to three, days of
sampling.  Prior to any sampling visit, all available data, such as
layouts and diagrams of the selected plant's production processes
and waste treatment facilities, were reviewed.  In most cases, a
visit to the plant was made prior to the actual sampling visit to
finalize the sampling approach.

Representative sample points were then selected.  Finally, before
the visit was conducted, a detailed sampling plan showing the
selected sample points and all pertinent sample data to be obtained
was presented and reviewed.

To more completely characterize each product by the number of
producers, production levels, production processes, in-plant
controls, waste sources and volumes, waste treatment, and waste
disposition, a major survey of each industry was necessary.

Following literature surveys, telephone contacts, and plant visits,
questionnaires for obtaining the above information were prepared for
each product.  After review and comments by selected industry
personnel, the questionnaires were mailed to all known product
manufacturers.  The results of these surveys provided the major
sources of industrial data presented in this document.

Various manufacturers of wastewater treatment equipment were
contacted by phone or were visited to obtain cost and performance
data on specific technologies.  Information collected was based both
on manufacturers'  research and on actual operation.
                                 1-2

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                              SECTION 2
                           LEGAL BACKGROUND
2.1  PURPOSE AND AUTHORITY

The Federal Water Pollution Control Act Amendments of 1972
established a comprehensive program to "restore and maintain the
chemical, physical, and biological integrity of the Nation's
waters." Section 101(a).  Section 301(b)(l)(A) set a deadline of
July 1. 1977. for existing industrial dischargers to achieve
"effluent limitations requiring the application of the best
practicable control technology currently available" (BPT).  Section
301(b)(2)(A) set a deadline of July 1, 1983. for these dischargers
to achieve "effluent limitations requiring the application of the
best available technology economically achievable (BAT), which will
result in reasonable further progress toward the national goal of
eliminating the discharge of all pollutants."

Section 306 required that new industrial direct dischargers comply
with new source performance standards (NSPS), based on best
available demonstrated technology.  Sections 307(b) and (c) of the
Act required pretreatment standards for new and existing dischargers
to publicly owned treatment works (POTW).  While the requirements
for direct dischargers were to be incorporated into National
Pollutants Discharge Elimination System (NPDES) permits issued under
Section 402, the Act made pretreatment standards enforceable
directly against dischargers to POTWs (indirect dischargers).

Section 402(a)(l) of the 1972 Act does allow requirements to be set
case-by-case.  However, Congress intended control requirements to be
based, for the most part, on regulations promulgated by the
Administrator of EPA.  Section 304(b) required regulations that
establish effluent limitations reflecting the ability of BPT and BAT
to reduce effluent discharge.  Sections 304(c) and 306 of the Act
required promulgation of regulations for NSPS.  Sections 304(f).
307(b). and 307(c) required regulations for pretreatment standards.
In addition to these regulations for designated industry categories.
Section 307(a) required the Administrator to promulgate effluent
standards applicable to all dischargers of toxic pollutants.

Finally. Section 501(a) authorized the Administrator to prescribe
any additional regulations "necessary to carry out his functions"
under the Act.
                                 2-1

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The EPA was unable to promulgate many of these regulations by the
deadlines contained in the Act. and as a result, in 1976. EPA was
sued by several environmental groups.  In settling this lawsuit. EPA
and the plaintiffs executed a "Settlement Agreement" which was
approved by the Court.  This agreement required EPA to develop a
program and meet a schedule for controlling 65 "priority" pollutants
and classes of pollutants.  In carrying out this program. EPA must
promulgate BAT effluent limitations guidelines, pretreatment
standards, and new source performance standards for 21 major
industries.   (See Natural Resources Defense Council. Inc. v. Train.
8 ERG 2120 (D.D.C. 1976). modified. 12 ERG 1833(D.D.C. 1979).
modified by Order dated October 26, 1982.

Several of the basic elements of the Settlement Agreement program
were incorporated into the Clean Water Act of 1977.  This law made
several important changes in the Federal water pollution control
program.  Sections 301(b)(2)(A) and 301(b)(2)(C) of the Act now set
July 1. 1984. as the deadline for  industries to achieve  effluent
limitations requiring application  of BAT for "toxic" pollutants.
"Toxic " pollutants here included  the 65 "priority" pollutants and
classes of pollutants that Congress declared "toxic" under Section
307(a) of the Act.

Likewise, EPA's programs for new source performance standards and
pretreatment standards are now aimed principally at controlling
toxic pollutants.  To strengthen the toxics control program. Section
304(e) of the Act authorizes the Administrator to prescribe "best
management practices" (BMPs).  These BMPs are to prevent the release
of toxic and hazardous pollutants  from:  (1) plant site runoff. (2)
spillage or leaks, (3) sludge or waste disposal, and (4) drainage
from raw material storage if any of these events are associated
with, or ancillary to, the manufacturing or treatment process.

In keeping with its emphasis on toxic pollutants, the Clean Water
Act of 1977 also revises the control program for non-toxic
pollutants.  For "conventional" pollutants identified under Section
304(a)(4) Concluding biochemical oxygen demand, suspended solids.
fecal coliform. and pH), the new Section 301(b)(2)(E) requires
"effluent limitations requiring the application of the best
conventional pollutant control technology" (BCT) — instead of BAT
— to be achieved by July 1. 1984.  The factors considered in
assessing BCT for an industry include the relationship between the
cost of attaining a reduction in effluents and the effluent
reduction benefits attained, and a comparison of the cost and level
of reduction of such pollutants by publicly owned treatment works
and industrial sources.  For those pollutants that are neither
"toxic" pollutants nor "conventional" pollutants. Sections
301(b)(2)(A)  and (b)(2)(F) require achievement of BAT effluent
                                 2-2

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limitations within three years after their establishment or July 1.
1984, whichever is later, but not later than July 1, 1987.

The purpose of this proposed regulation is to establish BPT. BAT,
and BCT effluent limitations and NSPS, PSES, and PSNS for the
Electrical and Electronic Components Point Source Category.

2.2  GENERAL CRITERIA FOR EFFLUENT LIMITATIONS

2.2.1  BPT Effluent Limitations

The factors considered in defining best practicable control
technology currently available (BPT) include:  (1) the total cost of
applying the technology relative to the effluent reductions that
result, (2) the age of equipment and facilities involved, (3) the
processes used. (4) engineering aspects of the control technology,
{5} process changes, (6) non-water quality environmental impacts
(including energy requirements), (7) and other factors as the
Administrator considers appropriate.  In general, the BPT level
represents  the average of the best existing performances of plants
within the industry of various ages, sizes, processes, or other
common characteristics.  When existing performance is uniformly
inadequate, BPT may be transferred from a different subcategory or
category.  BPT focuses on end-of-process treatment rather than
process changes or internal controls, except when these technologies
are common industry practice.

The cost/benefit inquiry for BPT is a limited balancing, committed
to EPA's discretion, which does not require the Agency to quantify
benefits in monetary terms.  See, e.g.. American Iron and Steel
Institute v. EPA. 526 F.2d 1027 (3rd Cir. 1975). In balancing costs
against the benefits of effluent reduction, EPA considers the volume
and nature of existing discharges, the volume and nature of
discharges expected after application of BPT, the general
environmental effects of the pollutants, and the cost and economic
impacts of the required level of pollution control.  The Act does
not require or permit consideration of water quality problems
attributable to particular point sources or water quality
improvements in particular bodies of water.  See Weyerhaeuser
Company v. Costie. 590 F.2d 1011 (D.C.Cir. 1978):  Appalachian Power
Company et al. v. U.S.E.P.A. (B.C. Cir., Feb. 8, 1972).

2.2.2  BAT Effluent Limitations

The factors considered in defining best available technology
economically achievable (BAT) include the age of equipment  and
                                 2-3

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facilities involved, the processes used, process changes, and
engineering aspects of the technology process changes, non-water
quality environmental impacts (including energy requirements) and
the costs of applying such technology [(Section 304(b) (2)(B)].  At
a minimum, the BAT level represents the best economically achievable
performance of plants of various ages, sizes, processes, or other
shared characteristics. As with BPT. uniformly inadequate
performance within a category or subcategory may require transfer of
BAT from a different subcategory or category.  Unlike BPT. however.
BAT may include process changes or internal controls, even when these
technologies are not common industry practice.

The statutory assessment of BAT "considers" costs, but does not
require a balancing of costs against effluent reduction benefits
(see Weyerhaeuser v. Costle. supra). In developing BAT. however. EPA
has given substantial weight to the reasonableness of costs.  The
Agency has considered the volume and nature of discharges, the
volume and nature of discharges expected after application of BAT.
the general environmental effects of the pollutants, and the costs
and economic impacts of the required pollution control levels.
Despite this expanded consideration of costs, the primary factor for
determining BAT is the effluent reduction capability of the control
technology.  The Clean Water Act of 1977 establishes the achievement
of BAT as the principal national means of controlling toxic water
pollution from direct discharging plants.

2.2.3  BCT Effluent Limitations

The 1977 Amendments added Section 301(b)(2)(E) to the Act
establishing "best conventional pollutant control technology" (BCT)
for discharges of conventional pollutants from existing industrial
point sources.  Conventional pollutants are those defined in Section
304(a)(4) [biological oxygen demanding pollutants (BOD), total
suspended solids (TSS). fecal coliform.and pH]. and any additional
pollutants defined by the Administrator as "conventional" [oil and
grease. 44 FR 44501. July 30. 1979].

BCT is not an additional limitation but replaces BAT for the control
of conventional pollutants.  In addition to other factors specified
in Section 304(b)(4)(B). the Act requires that BCT limitations be
assessed in light of a two-part "cost reasonableness" test.
American Paper Institute v. EPA. 660 F.2d 954 (4th Cir. 1981).  The
first test compares the costs for private industry to reduce its
conventional pollutants with the costs to publicly owned treatment
works for similar levels of reduction in their discharge of these
pollutants.  The second test examines the cost-effectiveness of
additional industrial treatment beyond BPT.  EPA must find that
                                 2-4

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limitations are "reasonable" under both tests before establishing
them as BCT.  In no case may BCT be less stringent than BPT.

EPA published its methodology for carrying out the BCT analysis oji
August 29. 1979 (44 FR 50732).  In the case mentioned above,  the
Court of Appeals ordered EPA to correct data errors underlying EPA's
calculation of the first test, and to apply the second cost test
(EPA had argued that a second cost test was not required).

On October 29. 1982. the Agency proposed a revised BCT methodology.
See 47 FR 49176.  Although the Agency has not yet promulgated its
revised BCT cost test methodology, we are promulgating BCT
limitations as proposed for the semiconductor and electronic crystal
industries.  Application of the BCT cost test is not necessary for
these industries for reasons presented in Section 8 of this document.

2.2.4  New Source Performance Standards

The basis for new source performance standards (NSPS) under Section
306 of the Act is the best available demonstrated technology.  New
plants have the opportunity to design the best and most efficient
processes and wastewater treatment technologies.  Therefore,
Congress directed EPA to consider the best demonstrated process
changes, in-plant controls, and end-of-process treatment
technologies that reduce pollution to the maximum extent feasible.

2.2.5  Pretreatment Standards for Existing Sources

Section 307(b) of the Act requires EPA to promulgate pretreatment
standards for existing sources (PSES) which industry must achieve
within three years of promulgation.  PSES are designed to prevent
the discharge of pollutants that pass through, interfere with, or
are otherwise incompatible with the operation of POTWs.

The legislative history of the 1977 Act indicates that pretreatment
standards are to be technology-based, analogous to the best
available technology for removal of toxic pollutants.  The General
Pretreatment Regulations which serve as the framework for the
pretreatment standards are in 40 CFR Part 403, 46 FR 9404
(January 28, 1981).

EPA has generally determined that there is passthrough of pollutants
if the percent of pollutants removed by a well-operated POTW
achieving secondary treatment is less than the percent removed by
the BAT model treatment system.  A study of 40 well-operated POTWs
with biological treatment and meeting secondary treatment criteria
showed that metals are typically removed at rates varying from 2O
                                 2-5

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percent to 70 percent.  POTWs with only primary treatment have even
lower rates of removal.  In contrast. BAT level treatment by the
industrial facility can achieve removal in the area of 97 percent or
more.  Thus, it is evident that metals do pass through POTWs.  As
for toxic organics. data from the same POTWs illustrate a wide range
of removal, from 0 to greater than 99 percent.  Overall. POTWs have
removal rates of toxic organics which are less effective than BAT.

2.2.6  Pretreatment Standards for New Sources

Section 307(c) of the Act requires EPA to promulgate pretreat ment
standards for new sources (PSNS) at the same time that it
promulgates NSPS.  These standards are intended to prevent the
discharge of pollutants which pass through, interfere with, or are
otherwise incompatible with a POTW.  New indirect dischargers, like
new direct dischargers, have the opportunity to incorporate the best
available demonstrated technologies —  including process changes,
in-plant controls, and end-of-process treatment technologies -- and
to select plant sites that ensure the treatment system will be
adequately installed.  Therefore, the Agency sets PSNS after
considering the same criteria considered for NSPS.  PSNS will have
environmental benefits similar to those from NSPS.
                                 2-6

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                              SECTION 3
                      INDUSTRY SUBCATEGORIZATION
This section explains how the E&EC category was developed, discusses
the rationale for subcategorization. and finally provides a listing
of the E&EC subcategories.

3.1  ES.EC CATEGORY DEVELOPMENT

The ES.EC category is derived from industries found in the Standard
Industrial Classification (SIC) major group 36, Electrical and
Electronic Machinery, Equipment, and Supplies.  Many of the
industries listed under this SIC Code were never evaluated as part
of the E&EC category because EPA initially concluded that the waste-
water discharges from these industries were primarily associated
with the Electroplating or Metal Finishing Category.

3.2  RATIONALE FOR INDUSTRY SUBCATEQORIZATION

After the Agency has obtained analyses of wastewater data and
process information from facilities within a category, the Clean
Water Act requires EPA to consider a number of factors to determine
if subcategorization is appropriate for the purpose of establishing
effluent limitations and standards.  These factors include:  raw
materials, final products, manufacturing processes, geographical
location, plant size and age, waste-water characteristics, non-water
quality environmental impacts, treatment costs, energy costs, and
solid waste generation.

A review of each of these factors revealed that product type is the
principal factor affecting the wastewater characteristics of plants
within the E&EC category.  Product type determines both the raw and
process material requirements, and the number and type of manufac-
turing processes used.  Plants manufacturing the same product were
found to use the same wet processes and produce wastewater with
similar characteristics.  Other factors affected the wastewater
characteristics, but were not adequate in themselves to be used as
bases for subcategorization,

3.3   SUBCATEGORY LISTING

Based on product type (discussed above). EPA established the
following twenty-one (21) subcategories for the E&EC category:
                                 3-1

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Semiconductors
Electronic Crystals
Electron Tubes (Phase II)
Phosphorescent Coatings  (Phase II)*
Capacitors, Fixed
Capacitors, Fluid Filled
Carbon and Graphite Products
Mica Paper
Incandescent Lamps
Fluorescent Lamps
Fuel Cells
Magnetic Coatings
Resistors
Transformers, Dry
Transformers. Fluid Filled
Insulated Devices. Plastic and Plastic Laminated
Insulated Wire and Cable. Nonferrous
Ferrite Electronic Parts
Motors. Generators, and Alternators
Eesistance Heaters
Switchgear
    Phosphorescent coatings named as luminescent materials in
    Phase II proposal.
                            3-2

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                            SECTION 4
                   DESCRIPTION OF THE INDUSTRY
This section provides a general description of the subcategories
presented in the previous section.  It includes a discussion of
the number of plants and production capacity, product lines, and
manufacturing processes including raw materials used.  Industry
descriptions for the regulated subcategories (Semiconductors and
Electronic Crystals) are presented in considerable detail, while
industry descriptions are abbreviated for subcategories which
have been excluded or proposed under Phase II.

4.1  SEMICONDUCTORS

4.1.1  Number of Plants and Production Capacity

It is estimated that approximately 257 plants are involved in the
production of semiconductor products.  This estimate comes from
an August 1979 listing of plant locations compiled by the
Semiconductor Industry Association,  Seventy-seven of the plants
are direct dischargers and one hundred and eighty are indirect
dischargers.  The U.S. Department of Commerce 1977 Census of
Manufacturers estimates that 62.000 production employees are
engaged in the manufacture of semiconductor products.  Plants
surveyed or visited during this study employ between 30 and 2500
production employees.  The majority of plants employ between 150
and 500 production employees, with a typical plant having about
350 employees.  Only 9 of the 52 plants in the data base have
more than 500 production employees.

The total number of semiconductor products for the year 1978 was
obtained from the Semiconductor Industry Association.  During
that year. 8.844 billion units were produced for a total revenue
of $3.123 billion.

4.1.2  Products

Semiconductors are solid state electrical devices which perform a
variety of functions in electronic circuits.  These functions
include information processing and display, power handling, data
storage, signal conditioning, and the interconversion between
light energy and electrical energy.  The semiconductors range
from the simple dioda. commonly used as an alternating current
rectifier, to the integrated circuit which may have the equiv-
alent of 250.000 active components in a 0.635 cm (1/4 inch)
square.
                               4-1

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Semiconductors are used throughout the electronics industry.  The
major semiconductor products are:

     o    Silicon based integrated circuits which include bi-
          polar. MOS (metal oxide silicon), and digital and
          analog devices.  Integrated circuits are used in a
          wide variety of commercial and consumer electronic
          equipment, calculators, electronic games and toys.
          and medical equipment.

     o    Light emitting diodes  (LED) which are produced from
          gallium arsenide and gallium phosphide wafers.  These
          devices are commonly used as information displays in
          electronic games, watches, and calculators.

     o    Diodes and transistors which are produced from silicon
          or germanium wafers.  These devices are used as active
          components in electronic circuits which rectify,
          amplify, or condition electrical signals.

     o    Liquid crystal display  (LCD) devices which are pro-
          duced from liquid crystals.  These devices are prim-
          arily used for information displays as an alternative
          to LEDs.

4.1.3  Manufacturing Processes and Materials

The manufacturing processes and materials used for semiconductor
production are described in the following paragraphs.  Each type
of semiconductor with its associated manufacturing operations is
discussed separately because production processes differ
depending on the basis material.

Silicon-Based Integrated Circuits — (Figure 4-1 on page 4-3).
These circuits require high purity crystal silicon as a basis
material.  Most of the companies  involved in silicon-based
integrated circuit production purchase crystal silicon ingots
(cylindrical crystals which can be sliced into wafers), slices.
or wafers from outside sources rather than grow their own
crystals.

In cases where the ingot is received it is sliced into round
wafers approximately 0.76mm (0.030 inches) thick.  These slices
are then lapped or polished by means of a mechanical grinding
machine or are chemically etched  to provide a smooth surface and
remove surface oxides and contaminants.  Commonly used etch
solutions are hydrofluoric acid or hydrofluoric-nitric acid
mixtures.  The presence of hydrofluoric acid is generally
necessary because of the solubility characteristics of silicon
and silicon oxide.  Other acids  such as sulfuric or nitric may be
                                 4-2

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CO
                                                                        SILICON WAFER
   SILICON OR
SILICON COMPOUND
   DEPOSITION
                                                                                   THIS SEQUENCE MAY BE
                                                                                  REPEATED 1 TO M TIMES







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SOLVENT RINSE "* DOPING
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WASTEWATER

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ASSEMBLY
                                                                   flGURE 4-1.  SILICON INTEGRATED CIRCUIT PRODUCTION

-------
 used  depending on the  nature  of  the  material  to  be  removed,
 Wastewater  results from cooling  the  diamond tipped  saws  used  for
 slicing*  from spent etch solution, and  from deionized  (DI) water
 rinses  following  chemical etching  and mechanical finishing
 operations.

 The next  step in  the process  depends on the type of  integrated
 circuit device being produced, but commonly involves the
 deposition  or growth of a layer  or layers  of  silicon dioxide.
 silicon nitride,  or epitaxial silicon.   For example, a silicon
 dioxide layer is  commonly applied  to bipolar  devices, and an
 initial layer of  silicon dioxide with the  subsequent deposition
 of a  silicon  nitride layer is commonly  applied to MOS devices.

 The wafer is  then coated with a  photoresist,  a photosensitive
 emulsion.   The wafer is next  exposed to ultraviolet light using
 metal or glass photomasks that allow the light to strike only
 selected areas.   After  exposure  to ultraviolet light, unexposed
 resist  is removed from  the wafer, usually  in  a DI water  rinse.
 This  allows selective etching of the wafer.   The wafer is then
 visually inspected under a microscope and  etched in a solution
 containing  hydrofluoric acid  (HF).   The etchant  produces
 depressions,  called holes or  windows, where the  diffusion of
 dopants later occurs.   Dopants are impurities such as boron.
 phosphorus  and other specific metals.   These  impurities
 eventually  form circuits through which  electrical impulses can be
 transmitted.   The wafer is then  rinsed  in  an  acid or solvent
 solution to remove the  remainder of  the hardened photoresist
 material.

 Diffusion of  dopants is generally a  vapor  phase  process  in which
 the dopant, in the form of a  gas, is injected into a furnace
 containing  the wafers.   Gaseous  phosphine  and boron trifluoride
 are common  sources  for  phosphorus and boron dopants, respect-
 ively.  The gaseous  compound  breaks  down into elemental  phos-
 phorus  or boron on the  hot wafer surface.  Continued heating of
 the wafer allows  diffusion of the dopant into the surface through
 the windows at controlled  depths to  form the  electrical  pathways
within  the wafer.   Solid forms of the dopant may also be used.
For example,  boron  oxide wafers  can  be  introduced into the
 furnace in close  proximity to the silicon wafers.  The boron
oxide sublimes  and  deposits boron on the surface of the  wafer by
condensation  and  then diffuses into  the  wafer upon continued
heating.

Then a  second  oxide  layer  is  grown on the wafer, and the process
 is repeated.   This  photolithographic-etching-diffusion-oxide
process sequence  may occur  a  number  of  times depending upon the
application of  the  semiconductor.

During  the photolithographic-etching-diffusion-oxide processes,
the wafer may  be  cleaned many times  in mild acid or alkali
                                 4-4

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solutions followed by DI water rinses and solvent drying with
acetone or isopropyl alcohol.  This is necessary to maintain
wafer cleanliness.

After the diffusion processes are completed, a layer of metal is
deposited onto the surface of the wafer to provide contact points
for final assembly.  The metals used for this purpose include
aluminum, copper, chromium, gold, nickel, platinum, and silver.
The processes associated with the application of the metal layer
are covered by the electroplating or metal finishing effluent
limitations and standards.  One of the following three processes
is used to deposit this metal layer:

     o    Sputtering --
          In this process the source metal and the target wafer
          are electrically charged, as the cathode and anode,
          respectively, in a partially evacuated chamber.  The
          electric field ionizes the gas in the chamber and
          these ions bombard the source metal cathode, ejecting
          metal which deposits on the wafer surface.

     o    Vacuum Deposition --
          In this process the source metal is heated in a high
          vacuum chamber by resistance or electron beam heating
          to the vaporization temperature.  The vaporized metal
          condenses on the surface of the silicon wafer.

     o    Electroplating —
          In this process the source metal is electrochemically
          deposited on the target wafer by immersion in an
          electroplating solution and the application of an
          electrical current.

Finally, the wafer receives a protective oxide layer (passiva-
tion) coating before being back lapped to produce a wafer of the
desired thickness.  Then the individual chips are diced from the
wafer and are assembled in lead frames for use.  Many companies
involved in semiconductor production send completed wafers to
overseas facilities where dicing and assembly operations are less
costly as a result of the amount of hand labor necessary to
inspect and assemble finished products.

Light Emitting Diodes (LIDs) — LEDs are produced from single
crystal gallium arsenide or gallium phosphide wafers.  These
wafers are purchased from crystal growers and upon receipt are
placed in a furnace where a silicon nitride layer is grown on the
wafer.  The wafer then receives a thin layer of photoresist, is
exposed through a photomask, and is developed with a xylene-based
developer.  Following this, the wafer is etched using
hydrofluoric acid or a plasma-gaseous-etch process, rinsed in DI
                                 4-5

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water, and then stripped of resist.  The wafer is again rinsed in
DI water before a dopant is diffused into the surface of the
wafer.  A metal oxide covering is applied next, and then a
photoresist is applied.  The wafer is then masked, etched in a
solution of aurostrip (a cyanide-containing chemical commonly
used in gold stripping), and rinsed in DI water.  The desired
thickness is produced by backlapping and a layer of metal.
usually gold, is sputtered onto the back of the wafer to provide
electrical contacts.  Testing and assembly complete the
production process.

Diodes and Transistors — Diodes and transistors are produced
from single crystal silicon or germanium wafers.  These devices.
called discrete devices, are manufactured on a large scale, and
their use is mainly in older or less sophisticated equipment
designs, although discrete devices still play an important role
in high power switching and amplification.

The single crystal wafer is cleaned in an acid or alkali solu-
tion, rinsed in DI water, and coated with a layer of photo-
resist.  The wafer is then exposed and etched in a hydrofluoric
acid solution.  This is followed by rinsing in DI water, drying.
and doping in diffusion furnaces where boron or phosphorus are
diffused into specific areas on the surface of the wafer.  The
wafers are then diced into individual chips and sent to the
assembly area.  In the assembly area electrical contacts are
attached to the appropriate areas and the device is sealed in
rubber, glass, plastic, or ceramic material.  Extra wires are
attached and the device is inspected and prepared for shipment.

Liquid Crystal Display (LCD) Production — A typical LCD
production line begins with optically flat glass that is cut into
four-inch squares.  The squares are then cleaned in a solution
containing ammonium hydroxide, immersed in a mild alkaline
stripping solution, and rinsed in DI water.  The plates are spun
dry and sent to the photolithography area for further processing.

In the photolithographic process a photoresist mask is applied
with a roller, and the square is exposed and developed.  This
square then goes through deionized water rinses and is dried,
inspected, etched in an acid solution, and rinsed in DI water.  A
solvent drying step is followed by another alkaline stripping
solution.  The square then goes through DI water rinses, is spun
dry. and is inspected.

The next step of the LCD production process is passivation.  A
silicon oxide layer is deposited on the glass by using liquid
silicon dioxide, or by using silane and oxygen gas with phosphine
gas as a dopant.  This layer is used to keep harmful sodium ions
                               4-6

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on the glass away from the surface where they could alter the
electronic characteristics of the device.  Several production
steps may occur here if it is necessary to rework the piece.
These include immersion in an ammonium bifluoride bath to strip
silicon oxide from a defective piece followed by DI water rinses
and a spin dry step.  The glass is then returned to the
passivation area for reprocessing.

After passivation, the glass is screen printed with devitrified
liquid glass in a matrix.  Subsequent baking causes the
devitrified glass to become vitrified, and the squares are cut
into the patterns outlined by the vitrified glass boundaries.
The saws used to cut the glass employ contact cooling water which
is filtered and discharged to the waste treatment system.

The glass is then cleaned in an alkaline solution and rinsed in
deionized water.  Following inspection, a layer of silicon oxide
is evaporated on.to the surface to provide alignment for the
liquid crystal.  The two mirror-image pieces of glass are aligned
and heated in a furnace, bonding the vitrified glass and creating
a space between the two pieces of glass.  This glass assembly is
immersed in the liquid crystal solution in a vacuum chamber, air
is evacuated, and the liquid crystal is forced into the space
between the glass pieces.  The glass is then sealed with epoxy,
vapor-degreased in a solvent, shaped on a diamond wheel,
inspected, and .sent to assembly.

4.2  ELECTRONIC CRYSTALS

4.2.1  Number of Plants

Table 4-1 on page 4-8 presents an estimate of the number of
producers of each type of crystal.  Of plants manufacturing
crystals at seventy sites, six are direct dischargers and
sixty-four are indirect dischargers.  The last fifteen years have
seen an extremely- rapid evolution of electronic technology.  A
major part of that evolution has been the development of single
crystals with unique structural and electronic properties which
serve as essential parts of most microelectronic devices.  The
production and use of gallium based crystals are expected to have
a particularly rapid growth over the next decade.  Gallium based
crystals have certain advantages over silicon based crystals for
semiconductor applications with respect to circuit speed, power
consumption, and higher temperature capabilities.  Consequently
the crystals industry has served an expanding market with an
ever-increasing list of products.  Companies comprising the
industry include not only those long-established, but also a
large proportion founded comparatively recently by entrepren-
eurs.  Of this latter group some companies have grown
considerably, while others are very small.  This growth in the
number of companies is expected to continue.
                               4-7

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                            TABLE 4-1

             PROFILE OF ELECTRONIC CRYSTALS INDUSTRY
Product
Estimated
 No. of
Producers(l)
 Product
  Estimated
    No. of
Producers(1)
Piezoelectric
Crystals:
   Quartz
   Ceramics(2)
   YIG
   YAG
Lithium Niobate

Liquid Crystals
    40
     8
     3
     2
     3
Semi-conducting
Crystals:
   Silicon              8
   Gallium arsenide     8
   Gallium phosphide    8
   Sapphire             1
   GGG                  3
   Indium arsenide      1
   Indium antimonide    1
   Bismuth telluride    1
(1)Several producers manufacture more than one product.
(2)Ceramics include lead zirconate, ammonium hydrogen
phosphate, potassium hydrogen phosphate and lead zirconium
titanate.
                               4-8

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4.2.2  Products

Based on their properties and thus their uses in the industry,
electronic crystals can be divided into three types:  piezo-
electric, semiconducting, and liquid crystals.

Piezoelectric Crystals -- Piezoelectric crystals are transducers
which interconvert electrical voltage and mechanical force.
There are three principal types:  quartz, ceramic, and
yttrium-iron-garnet (YIG), and some other less common types.

Quartz crystals are the most widely used of the piezoelectric
crystals, with applications as timing devices in watches, clocks,
and record players; freqency controllers, modulators, and
demodulators in oscillators; and filters.  Some quartz is mined,
but the main supply comes from synthesized material produced by
about forty companies in the United States.

Ceramic crystals are basically fired mixtures of the oxides of
lead, zirconium, and titanium.  They are used in transducers,
oscillators, utrasonic cleaners, phonograph cartridges, gas
igniters, audible alarms, keyboard switches, and medical
electronic equipment.

YIG crystals are made by the slow crystal growth of a melt of
yttrium oxide, iron oxide, and lead oxide.  Their primary use is
in the microwave industry for low frequency applications as in
sonar.  Their incorporation into microwave circuits makes wide-
band tuning possible.

Other potentially useful peizoelectric crystals being developed
or manufactured on a small scale include lithium niobate, bismuth
germanium oxide, and yttrium-aluminum-garnet  (Y&G).

Semiconducting Crystals — Semiconducting crystals  have
properties intermediate between .a conductor and an  insulator,
thus allowing for a wide range of applications in the field of
microelectronics.  In conductors, current is carried by electrons
that travel freely throughout the atomic lattice of the
substance.  In insulators the electrons are tightly bound and are
therefore unavailable to serve as carriers of electric current.
Semiconductors do not ordinarily contain free charge carriers but
generate them with a modest expenditure of energy.

Silicon crystals are widely used in the manufacture of micro
electronic chips:  transistors, diodes, rectifiers, other circuit
elements, and solar cells.  Crystals of pure  silicon are poor
conductors of electricity.  In order to make  them better
conductors, controlled amounts of impurity atoms are introduced
into the crystal by a process called doping.
                               4-9

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When silicon  is doped with an element whose atoms contain more or
fewer valence electrons than silicon, free electrons or electron
"holes" are thus available to be mobilized when a voltage is
applied to the crystal.  Phosphorus and boron are common dopants
used in silicon crystals.

Gallium arsenide and gallium phosphide crystals were developed
under the need for a transistor material with good high tempera-
ture properties.  These crystals exhibit low field electron
mobility, and are therefore useful at high frequencies, in such
devices as the field effect transistor (FET).  The technology of
manufacturing high performance gallium arsenide FET's is maturing
at a rapid rate and the devices are experiencing a greatly
expanding role in oscillators, power amplifiers, and low
noise/high gain applications.

Most gallium arsenide/phosphide is presently being used for
production of light emitting diodes (LEDs) which can convert
electric energy into visible electromagnetic radiation.  The
interconversion of light energy and voltage in gallium arsenide
is reversible.  Hence this material is also undergoing intensive
development as a solar cell, in which sunlight is converted
directly to electricity.

Indium arsenide and indium antimonide crystals, formed by direct
combination of the elements, are used as components of power
measuring devices.  These crystals are uniquely suited to this
function because they demonstrate a phenomenon known as the Hall
Effect, the development of a transverse electric field in a
current-carrying conductor placed in a magnetic field.

Bismuth telluride crystals demonstrate a phenomenon known as
thermoelectric cooling because of the Peltier Effect.  When a
current passes across a junction of dissimilar metals, one side
is cooled and the other side heated.  If the cold side of the
junction is attached to a heat source, heat will be carried away
to a place where it can be conveniently dissipated.  Devices
utilizing this effect are used to cool small components of
electrical circuits.

Sapphire crystals are used by the semiconductor industry as
single crystal wafers which act as inactive substrates for an
epitaxial film of silicon, that is, substrates upon which a thin
layer of silicon is deposited in a single-crystal configuration.
This is referred to as silicon on sapphire (SOS).  In addition to
being a dielectric material, single crystal sapphire exhibits a
combination of optical and physical properties which make it
ideal for a variety of demanding optical applications.  Sapphire,
the hardest of the oxide crystals,  maintains its strength at high
temperatures,  has good thermal and excellent electrical
                               4-10

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properties and is chemically inert.   Therefore,  it can be used in
hostile environments when optical transmission ranging from
vacuum ultraviolet to near infrared  is required.   Sapphire
crystals have found application in semiconductor  substrates.
infrared detector cell windows. UV windows and optics, high power
laser optics, and ultracentrifuge cell windows.

Gallium Gadolinium Garnet (GGG) is the most suitable substrate
for magnetic garnet films because of its excellent chemical.
mechanical, and thermal stability, nearly perfect material and
surface quality, crystalline structure, and the commercial
availability of large diameter substrates.  GGG is the standard
substrate material used for epitaxial growth of single crystal
iron garnet films which are used in magnetic bubble domain
technology.

Liquid Crystals -- Liquid crystals are organic compounds or mix-
tures of two or more organic compounds which exhibit properties
of fluidity and molecular order simultaneously over a small
temperature range.  An electric field can disrupt the orderly
arrangement of liquid crystal molecules, changing the refractive
properties.  This darkens the liquid enough to form visible
characters in a display assembly, even though no light is
generated.  This affect is achieved by application of a voltage
and does not require a current flow.  Therefore minimal use of
power is required, allowing the display in battery operated
devices to be activated continuously.  Liquid crystals are used
in liquid crystal display (LCD) devices for wrist watches,
calculators and other consumer products requiring a low power
display.

4.2.3  Manufacturing Processes and Materials

Piezoelectric Crystals -- The following is a description of the
manufacturing processes used for growth and fabrication of the
three major piezoelectric crystal types:  quartz, ceramic, and
yttrium-iron-garnet (YIG).

Quartz Crystals:
The growth of quartz crystals is a hydrothermal process carried
out in an autoclave under high temperature and pressure.  The
vessel is typically filled to 80 percent of the free volume with
a solution of sodium hydroxide or sodium carbonate.  Particles
of  -quartz nutrient are placed in the lower portion of the
vessel where they are dissolved.  The quartz is then transferred
by convection currents through the solution and deposited on seed
crystals which are suspended in the upper portion of the vessel.
Seeds are thin wafers or spears of quartz about six inches long.
A vessel normally contains 20 seeds.  Nutrient quartz will
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dissolve and deposit onto  the  seed crystals because a small
temperature gradient exists between the lower and upper portion
of the autoclave, promoting the migration of quartz to the upper
portion of the vessel.  Upon completion of the growth cycle (45
to 60 days), crystals are  removed and cleaned for the fabrication
process.

The quartz crystals are cut or sliced using diamond blade saws or
slurry saws.  Diamond blade saws are used when one wafer at a
time is cut.  Slurry saws  are utilized in mass production lines
for cutting many wafers at a time.  The crystal wafers are then
lapped to the desired thickness.  After lapping, the crystal is
usually etched with hydrofluoric acid or ammonium bifluoride and
subsequently rinsed with water.  Crystal edges are then beveled
using either a dry grinding grit or a water slurry.  Following
this, metals are deposited on the crystal by vacuum deposition.
The crystal wafers are mounted on a masking plate and placed in
an evacuated bell jar.  Metal strips in the jar are vaporized,
coating the unmasked area  of the wafer.  The metal coating (gold.
silver, or aluminum are o.ften used) functions as the crystal's
conducting base.  The metal coating operation is covered by
regulations for the Metal  Finishing Category.  During fine tune
deposition, the crystal is allowed to resonate at a specified
frequency and another thin layer of metal is deposited on it.
Wire leads are attached to the crystal and it is sealed in a
nitrogen atmosphere.  At this point the crystal is ready for sale
or insertion into an electronic circuit.  Figure A-2 on page 4-13
presents a diagram of the  process indicating major waste
generating operations.

Ceramic Crystals:
Ceramic crystal production begins by mixing lead oxide, zirconium
oxide and titanium oxide powders plus small amounts of dopants to
achieve desired specifications in the final product.  The powders
are mixed with water to obtain uniform blending, then filtration
takes place and the waste  slurry is sent to disposal. This
mixture is roasted, ground wet, and blended with a binder
(polyvinyl alcohol) in a tank called a blundger.  The mixture is
then spray dried, pressed, and fired to drive off the binder.
which is not recovered.  Formed crystals are enclosed in alumina
and retired.  After this final firing crystals are polished.
lapped, and sliced as in quartz production.  Electrodes, usually
made of silver, are then attached to the crystals.  Approximately
ten percent of the crystals have electrodes deposited by
electroless nickel plating.  This plating operation is covered by
regulations for the Metal  Finishing Category.  Poling, the final
process step, gives the crystal its piezoelectric properties.
This step is performed with the crystal immersed in a mineral oil
bath.  Some companies sell the used mineral oil to reclaimers.
After poling the crystal is ready for sale and use.  Ceramic
crystal production is very small.
                               4-12

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                               PROCESS FOR:
                             aUARTZ CRYSTALS
         PROCESS FOR:
SILICON, GALLIUM ARSENIDE, AND
 GALLIUM PHOSPHIDE CRYSTALS
                                                                    MIXING INGREDIENTS
                                                                    (Gi * Aj) OR FORMING
                                                                     ELEMENTAL Si FROM
                                                                     TRICHLOROSILANE
HEAT PROCESS -
FORMATION OF
SINGLE CRYSTALS
1

ABRASIVE SLURRY WASTE
I WATER AND Oil. BASED)
WATER * FLOURIDE + ACID -ť
                                                                                               ABRASIVE SLURRY WASTE
                                                                                               (WATER AND OIL BASED);
                                                                                               POWDER FROM CRYSTAL
                                                                                               MATERIAL
                                                                                                ALUMINA + ETHYLENE
                                                                                                GLYCOL ABRASANT
                                                                                                VARIOUS ACIDS,
                                                                                                BASES, SOLVENTS
                         FIGURE 4-2.  BASIC MANUFACTURING PROCESSES FOR ELECTRONIC CRYSTALS
                                                     .4-13

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Yttrium-Iron-Garnet  (YIG)  Crystals:
The  production  of  YIG  crystals  involves  the melting  of metal
compounds  to  form  large  single  crystals  which  are  processed to
yield minute  YIG spheres for use  in microwave  devices.  Yttrium
oxide,  iron oxide  and  lead oxide  powders are mixed,  placed in a
platinum crucible  and  melted in a furnace.  After  the melt
equilibrates  at this temperature  the  furnace is cooled, the slag
is poured  off.  leaving the YIG  crystals  attached to  the
crucible.  This growth process  takes  approximately 28 days.  The
crucible is soaked in  hydrochloric and nitric  acid to remove the
crystals which  are then sliced  by a diamond blade  saw to form
cubes 0.04 inches  on a side.  These cubes are  placed in a
rounding machine,  and  the  rounding process is  followed by
polishing  to  obtain perfectly spherical  crystals for use in a
microwave  device.

The  production  of  YIG  and  ceramic crystals with piezoelectric
properties constitutes a minor  portion of the  piezoelectric
crystal industry.  The entire YIG production for the USA is less
than fifteen  pounds per year.

Semiconducting Crystals -- Several methods are currently in use
for  the production of  semiconducting  single crystals.  An
important method,  the  Czochralski. functions by lowering a seed
crystal (a small single crystal)  into a  molten pool of the
crystal material and raising the  seed slowly (over a period of
days) with constant slow rotation.  Because the temperature of
the  melt is just above the melting point, material solidifies
onto the seed crystal, maintaining the same crystal  lattice.
Crystals up to 6 inches in diameter and  4 feet long can be grown
by this method.  The Czochralski  method  is used to grow silicon.
sapphire, GGG, and gallium arsenide.

Another method, called the  Chalmers method, is usect by some
manufacturers to grow  gallium arsenide crystals.   If the molten
material is contained  in a  horizontal boat and cooled slowly from
one  end. a solid/liquid interface will pass through the melt.
Under controlled conditions or with the use of a seed crystal the
solid will form as a single crystal.

Silicon Crystals:
The raw material used  to produce  silicon crystals is polycrys-
talline silicon.  Reduction of purified trichlorosilane with
hydrogen is the usual method for  producing the high purity
polycrystalline ("poly") silicon.   Single crystals of silicon are
then grown by the Czochralski method,  the most common crystal
growing technique for semiconductor crystals.
                               4-14

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After a crystal has been grown, the outside diameter is ground to
produce a crystalline rod of constant diameter.  The ends are cut
off and used to evaluate the quality of the crystal.  At the same
time, its orientation is determined and a flat is ground the
length of the rod to fix its position.  Rods ace then sliced into
wafers.  Silicon dust and cutting oils mixed with water are waste
products of the grinding and cutting operations.

Lapping is a machining operation using an alumina and ethylene
glycol abrasive medium which produces a flat polished surface and
reduces the thickness of the wafers.  After lapping, the wafers
are polished using a hydrated silica medium.  The final cleaning
is done with various acids, bases and solvents.

Sapphire and GGG Crystals:
To produce sapphire and gallium gadolinium garnet (GGG) crystals
a raw material called crackle, (high purity alumina waste from a
European gem crystal growing process) is melted in an iridium
crucible.  Sapphire is pure alumina.  Gadolinium oxide and
gallium oxide powders are added to the crucible if GGG is the
desired product.  These are melted using an induction furnace
under a nitrogen atmosphere with a trace of oxygen added.
Crystals are pulled from the melt using the Czochralski method.

These crystals are annealed in oxygen-gas furnaces after growth
in order to remove internal stress and make the crystalline rods
less brittle.  Sapphire and GGG rods are ground and sliced using
diamond abrasives and a coolant consisting of a mixture of oil
and water.  Wafers are lapped using a diamond abrasive compound
and lubricants, and are polished with a colloidal silica slurry.
GGG wafers are coated with a thin film using liquid-phase
epitaxy.  The film has small permanent magnetic domains, which
make it useful for "magnetic bubble" memory devices.  The
sapphire wafers are coated with a layer of epitaxial silicon to
produce the SOS substrates for microelectronic chip manufacture.

Other Semiconducting Crystals:
The formation of gallium arsenide, gallium phosphide, and indium
bismuth telluride takes place by a chemical reaction which occurs
in an enclosed capsule.  When gallium arsenide  or phosphide
crystals are produced, the gallium, on one side of the capsule.
is heated to more than 1200C.  The arsenic or phosphorus on the
other side of the capsule is heated separately until it
vaporizes.  The vapor and hot metal react to form a molten
compound.  (In the case of phosphorus, high pressure is
required.)  The molten compound can then be crystallized in situ
by the Chalmers technique or cooled and crystallized by the
Czochralski method.  These crystals undergo the fabrication
operations mentioned earlier.
                               4-15

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To  produce  indium  antimonide.  indium  arsenide  and  bismuth  tellu-
ride,  the elements  are mixed  together, melted  to form  the  com-
pound  and frozen into a  polycrystalline  ingot.  These  materials
are used in a  polycrystalline  state so no  crystal  growing  step
occurs.  The ingot  is fabricated  into wafers by normal machining
operations.  Because these materials  are relatively  soft,  carbide
abrasives with water cooling  are  sufficient for machining  the
ingots.  The wafers are  milled  into small  pieces and incorporated
into electronic' components.

Liquid Crystals —  Liquid crystals are produced by organic
synthesis.   Precursor organic  compounds  are mixed  together and
heated until the reacton is complete.  The reacted mass is
dissolved in an organic  solvent such  as  toluene, and is
crystallized  and recrystallized  several times to  obtain a
product of  the desired purity.  Several  of these organic
compounds are  then  mixed to form  a eutectic mixture with the
correct balance of  properties  for LCD application.

4.3  ELECTRON  TUBES (Proposed  Under Phase  II)

Electron tubes are  devices in which electrons  or ions  are  con-
ducted between electrodes through a vacuum or  ionized  gas within
a gas-tight  envelope which may  be glass, quartz, ceramic,  or
metal.  A large variety  of electron tubes are  manufactured.
including klystrons, magnetrons,  cross field amplifiers, and
modulators.  These  products are used  in  aircraft and missile
guidance systems, weather radar,  and  specialized industrial
applications.  The Electron Tube  subcategory also  includes
cathode-ray  tubes and T.V. picture tubes that  transform
electrical  current  into  visual  images.   Cathode-ray tubes
generate images by  focusing electrons onto a luminescent screen
in  a pattern controlled  by the  electrical field applied to the
tube.  In T.V. picture tubes, a stream of high-velocity electrons
scans a luminescent screen.  Variations  in the electrical
impulses applied to the  tube cause changes in  the  intensity of
the electron stream and  generate  the  image on  the  screen.

Processes involved  in the manufacture of electron  tubes include
degreasing of  components; application of photoresist,  graphite.
and phosphors  to glass panels;  and sometimes electroplating
operations including etching and machining.  The application of
phosphors is unique to T.V. picture tubes and  other cathode-ray
tubes.  The  phosphor materials may include sulphides of cadmium
and zinc and yttrium and europium oxides.  The electroplating
operations are covered under the Metal Finishing Category.  Raw
materials can  include copper and steel as basis materials, and
copper, nickel, silver,   gold, rhodium and chromium to  be
electroplated.   Phosphors,  graphite, and protective coatings
                               4-16

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containing toluene or silicates and solders of lead oxide may
also be used.  Process chemicals may include hydrofluoric.
hydrochloric, sulfuric.  and nitric acids for cleaning and
conditioning of metal parts;  and solvents such as methylene
chloride,  trichloroethylene.  methanol.  acetone',  and polyvinyl
alcohol.

4.4  PHOSPHORESCENT COATINGS (Proposed Under Phase II As
                              Luminescent Materials)

Phosphorescent coatings are coatings of certain chemicals,  such
as calcium halophosphate and activated zinc sulfide, which emit
light.  Phosphorescent coatings are used for a variety of
applications, including fluorescent lamps, high-pressure mercury
vapor lamps, cathode ray and television tubes, lasers, instrument
panels, postage stamps, laundry whiteners, and specialty paints.
This study is restricted to those coatings which are applicable
to the E&EC category, specifically to those used in fluorescent
lamps and television picture tubes.  The most important
fluorescent lamp coating is calcium halophosphate phosphor.  The
intermediate powders are calcium phosphate and calcium fluoride.
There are three T.V. powders:  red. blue, and green.  The red
phosphor is yttrium oxide activated with europium; the blue
phosphor is zinc sulfide activated with silver,  and the green
phosphor is zinc-cadmium sulfide activated with copper.  The
major process steps in producing phosphor escent coatings are
reacting,  milling, and firing the raw materials; recrystallizing
raw materials, if necessary; and washing, filtering, and drying
the intermediate and final products.

4.5  CAPACITORS. FIXED

The primary function of capacitors is to store electrical
energy.  Fixed capacitors are layered structures of conductive
and dielectric materials.  The layering of fixed capacitors is
either in the form of rigid plates or in the form of thin sheets
of flexible material which are rolled.  Typical capacitor appli-
cations are energy storage elements, protective devices, filter-
ing devices, and bypass devices.  Some typical processes in
manufacturing fixed capacitors are anode fabrication, formation
reactions, dipping, layering, cathode preparation, welding, and
electrical evaluation.   All manufacturing processes are covered
under the Metal Finishing category by unit operation.  Fixed
capacitor types are distinguished from each other by type of
conducting material, dielectric material, and encapsulating
material.

4.6  CAPACITORS. FLUID FILLED

As with fixed capacitors, the primary function of fluid-filled
capacitors is to store electrical energy.  Wet capactitors
                               4-17

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contain a fluid dielectric that  separates  the anode  (in the
center of the device) from the cathode  (the capacitor shell).
which also serves to contain  the fluid.  Fluid-filled capacitors
are used for industrial applications as el.ectrical storage.
filtering, and circuit protection devices.  Some  typical
processes in manufacturing fluid-filled capacitors are anode
fabrication, formation reactions, metal can preparation.
dielectric addition, soldering,  and electrical evaluation.  All
manufacturing processes are covered under  the Metal  Finishing
category by unit operation.

4.7  CARBON AND GRAPHITE PRODUCTS

Carbon and graphite  (elemental carbon in amorphous crystalline
form) products exhibit unique electrical,  thermal, physical, and
nuclear properties.  The major carbon and  graphite product areas
are (1) carbon electrodes for aluminum  smelting and  graphite
furnace electrodes for steel  production. (2) graphite molds and
crucibles for metallurgical applications.  (3) graphite anodes for
electrolytic cells used for production  of  such materials as
caustic soda, chlorine, potash,  and sodium chlorate, (4)
non-electrical uses such as structural, refractory,  and nuclear
applications. (5) carbon and  graphite brushes, contacts, and
other products for electrical applications, and (6)  carbon and
graphite specialties such as  jigs, fixtures, battery carbons,
seals, rings, and rods for electric arc lighting, welding, and
metal coating.  The production process  starts with weighing the
required quantities of calcined  carbon  filler, binders, and
additives; combining them as a batch in a  heated  mixer; and then
forming the resulting "green" mixture by compression molding or
by extrusion.  Green bodies are  carefully  packed  and baked for
several weeks.  After baking, the items are machined into final
shape.

4.8  MICA PAPER

Mica paper is a dielectric (non-conducting) material used in the
manufacture of fixed capacitors.  Mica paper is manufactured in
the following manner:  Mica is heated in a kiln and  then placed
in a grinder where water is added.  The resulting slurry is
passed to a double screen separator where  undersized and
oversized particles are separated.  The screened  slurry flows to
a mixing pit and then to a vortex cleaner.  The properly-sized
slurry is processed in a paper-making machine where  excess water
is drained or evaporated.  The resulting cast sheet  of mica paper
is fed on a continuous roller to  a radiant heat drying oven.
where it is cured.  From there,  the mica paper is wound onto
rolls, inspected, and shipped.
                               4-18

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4.9  INCANDESCENT LAMPS

An incandescent lamp is an electrical device that emits light.
Incandescent tungsten filament lamps operate by passage of an
electric current through a conductor (the filament).  Heat is
produced in this process, and light is emitted if the temper-
ature reaches approximately 500C.  Most lamp-making operations
are highly automated.  The mount machine assembles a glass flare,
an exhaust tube, lead-in wires, and molybdenum filament support.
A glass bulb is electrostatically coated with silica and the bulb
and mount are connected at the exhaust and seal machine.  The
bulb assembly is annealed, exhausted, filled with an inert gas,
and sealed with a natural gas flame.  The finishing machine
solders the lead wires to the metallic base which is then
attached to the bulb assembly by a phenolic resin cement or by a
mechanical crimping operation.  The finished lamp is aged and
tested by illuminating it with excess current for a period of
time to stabilize its electrical characteristics.

4.10  FLUORESCENT LAMPS

A fluorescent lamp is an electrical device that emits light by
electrical excitation of phosphors that are coated on the inside
surface of the lamp.  Fluorescent lamps utilize a low pressure
mercury arc in argon.  Through this process, the lowest excited
state of mercury efficiently produces short wave ultraviolet
radiation at 2,537 Angstroms.  Phosphor materials that are
commonly used are calcium halophosphate and magnesium tungstate.
which absorb the ultraviolet photons into their crystalline
structure and re-emit them as visible white light.

There are two types of fluorescent lamps:  hot cathode and cold
cathode.  Cold cathode manufacture is primarily an electroplating
operation.  Hot cathode fluorescent lamp manufacturing is a
highly automated process.  Glass tubing is rinsed with deionized
water and gravity-coated with phosphor.  Coiled tungsten
filaments are assembled together with lead wires, an exhaust
tube, a glass flare, and a starting device to produce a mount
assembly.  The mount assemblies are heat pressed to the two ends
of the glass tubing.  The glass tubes are exhausted and filled
with an inert gas.  The lead wires are soldered to the base and
the base is attached to the tube ends.  The finished lamp
receives a silinone coating solution.  The lamp is then aged and
tested before shipment.

4.11  FUEL CELLS

Fuel cells are electrochemical generators in which the chemical
energy from a reaction of air  (oxygen) and a conventional fuel  is
converted directly into electricity.  The major fuel cell
                               4-19

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products, basically in research and development stages, are:  (1)
fuel cells for military applications. (2) fuel cells for power
supply to vehicles, (3) fuel cells used as high power sources.
and (4) low temperature and low pressure fuel cells with carbon
electrodes.  Some typical processes in the manufacture of fuel
cells are extrusion or machining, heat treating, sintering.
molding, testing, and assembling.  Some typical raw materials are
base carbon or graphite, plastics, resins, and Teflon.

4.12  MAGNETIC COATINGS

Magnetic coatings are applied to tapes to allow the recording of
information.  Magnetic tapes are used primarily for audio, video.
computer, and instrument recording.  The process begins with
milling to create sub-micron magnetic particles.  Ferric oxide
particles are used almost exclusively with trace additions of
other particles or alloys for specific applications.  The
particles are mixed, through several steps, with a variety of
solvents, resins, and other additives.  The coating mix is then
applied to a flexible tape or film material (for example.
cellulose acetate).  After the coating mix is applied, particles
are magnetically oriented by passing the tape through a magnetic
field, and the tape is dried and slit for testing and sale.

4.13  RESISTORS

Resistors are devices commonly used as components of electric
circuits to limit current flow or to provide a voltage drop.
Resistors are used for television, radios, and other applica-
tions.  Resistors can be made from various materials.  Nickel-
chrome alloys, titanium, and other resistive materials can be
vacuum-deposited for thin film resistors.  Glass resistors are
also available for many resistor applications.  Two examples of
glass resistors are the precision resistor and the low power
resistor.

4.14  TRANSFORMERS. DRY

A transformer is a stationary apparatus for converting electrical
energy at one alternating voltage into electrical energy at
another (usually different) alternating voltage by means of
magnetic coupling (without change of freguency).  Dry
transformers use standard metal working and metal finishing
processes (covered by the Metal Finishing category).  The main
operations in manufacturing a power transformer are the
manufacture of a steel core, the winding of coils, and the
assembly of the coil/core on some kind of frame or support.
                               4-20

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 4.15  TRANSFORMERS. FLUID FILLED

 Wet transformers  perform the  same  functions  as  dry  transformers.
 but the  former  are filled with dielectric  fluid.  Wet  tranformers
 use standard  metal working  and metal  finishing  processes which
 are covered by  the Metal Finishing category.  The only wet
 process  unique  to E&EC  are  the cleanup  and management  of residual
 dielectric fluid.  The  main operations  in  manufacturing a power
 transformer are the  manufacture  of a  steel core, the winding  of
 coils, and the  assembly of  the coil/core on  some Kind  of frame or
 support.   In  the  manufacture  of  wet transformers there is the
 need  for a container or tank  to  contain the  dielectric fluid.

•4.16   INSULATED DEVICES. PLASTIC AND  PLASTIC LAMINATED

 An  insulated  device  is  a device  that  prevents the conductance of
 electricity  (dielectric).   Plastic and  plastic  laminates are
 types of insulators.  Plastics are used in electronic
 applications  as connectors  and terminal boards.  Other uses
 include  switch  bases, gears,  cams, lenses, connectors, plugs.
 stand-off insulators. Knobs,  handles, and  wire  ties.   Thermo-
 setting  plastics  are melted and  injected into a closed mold where
 they  solidify.   These insulating moldings  include polyethylene.
 polyphenylene,  and poly vinyl chloride. Laminates  are used in
 transformer terminal boards,  switchgear arc  chutes, motor and
 generator slot  wedges,  motor  bearings,  structural support,  and
 spacers.   Laminates  are made  by  bonding layers  of a reinforcing
 web.   The reinforcements consist of fiberglass, paper, fabrics.
 or  synthetic  fibers.  The  bonding  resins are usually phenolic.
 melamine. polyester,  epoxy. and  silicone.  Laminates are made by
 impregnating  the  reinforcing  webs  in  treating towers,  partially
 polymerizing, pressing  and  finally polymerizing them to  shape
 under heat and  pressure.  Manufacturing processes associated  with
 these products  are studied  as part of the  Plastics  Molding  and
 Forming  category.

 4.17   INSULATED WIRE AND CABLE.  NON-FERROUS

 Insulated wires and  cables  are products containing  a conductor
 covered  with  a  non-conductive material  to  eliminate shock
 hazard.   The  major products in this segment  are:   (1)  insulated
 non-ferrous wire. (2) auto  wiring  systems, (3)  magnetic  wire. (4)
 bulk  cable appliances,  and  (5) camouflage  netting.  Typical
 processes used  in the manufacture  of  insulated  wire and  cable are
 drawing,  spot welding,  heat treating, forming,  and  assembling.
 All manufacturing processes are  included  in  the Metal  Finishing
 category. Some of the  basis  materials  are copper,  carbon.
 stainless steel,  steel, brass-bronze, and  aluminum.
                                4-21

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 4.18   FERRITE  ELECTRONIC  PARTS

 Ferrite  electronic  parts  are  electronic  products  utilizing
 metallic oxides.  The  metallic  oxides  have  ferromagnetic
 properties  that  offer  high  resistance, making  current  losses
 extremely low  at  high  frequencies.   Ferrite electronic  products
 include:  (1)  magnetic recording  tape.  (2)  magnetic  tape
 transport heads.  (3) electronic and  aircraft instruments.  (4)
 microwave connectors and  components, and  (5) electronic digital
 equipment.   Some  typical  processes to  manufacture ferrite
 electronic  parts  are shearing,  slitting,  fabrication and
 machining.   All  production  processes in  this segment are included
 in  the Metal Finishing category.  Some typical  raw materials are
 aluminum, magnesium, bronze,  and  brass.

 4.19   MOTORS.  GENERATORS. AND ALTERNATORS

 Motors are  devices  that convert electric  energy into mechanical
 energy.   Generators are devices which  convert  an  input mechanical
 energy into  electrical energy.  Alternators are devices that
 convert  mechanical  energy into  electrical energy  in  the form of
 an  alternating current.   The  major motor, generator, and
 alternator  products are:  (1) variable speed drives  and gear
 motors,  (2)  fractional horsepower motors, (3)  hermetic motor
 parts, (4)  appliance motors.  (5)  special  purpose  electric motors.
 (6) electrical equipment  for  internal  combustion  engines, and  (7)
 automobile  electrical  parts.  Some typical  processes are casting.
 stamping, blanking, drawing,  welding,  heat  treating, assembling
 and machining.  All production  processes  are included in the
 Metal  Finishing category.   Some basis  materials are  carbon steel.
 copper,  aluminum  and iron.  These materials are used as sheet
 metal, rods, bars,  strips,  coils, casting,  and  tubing.

 4.20   RESISTANCE  HEATERS

 Resistance heaters  convert  electrical  energy into  usable heat
 energy.  Three types of resistance heaters  are  made; rigid
 encased  elements  used  for electric stoves and ovens, bare wire
 heaters used in toasters  and  hair dryers, and  insulated flexible
 heater wire  that  is incorporated  into  blankets  and heating pads.
 Some typical processes  used in  the manufacture  of  resistance
 heaters are  plating, welding  or soldering,  molding,  and
 machining.   These processes are included  in the Metal Finishing
 category.  Some raw materials used are steel, nickel, copper.
 plastic,  and rubber.

 4.21   SWITCHGEAR

 Switchgear are products used to control electrical flow and to
protect equipment from  electrical power surges  and short
                               4-22

-------
circuits.  The major switchgear products are:  (1) electrical
power distribution controls and metering panel assemblies, (2)
circuit breakers. (3) relays. (4) switches, and (5) fuses.  Some
typical manufacturing processes are:  chemical milling, grinding.
electroplating, soldering or welding, machining and assembly.
All processes are included in the Metal Finishing and Plastics
Processing categories.  Some typical basis materials are plastic.
steel, copper, brass, and aluminum.
                               4-23

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                              SECTION 5


                      WASTEWATER CHARACTERISTICS
This section presents information related to wastewater flows,
wastewater sources, pollutants found, and the sources of these
pollutants.  For subcategories which are excluded or proposed under
Phase II, the discussion of wastewater characteristics is
abbreviated.  A general discussion of sampling techniques and
wastewater analysis is also provided.

5.1  SAMPLING AND ANALYTICAL PROGRAM

More than 250 plants were contacted to obtain data on the E&EC
Category.  Seventy-eight of these plants were visited for an on-site
study of their manufacturing processes, water used and wastewater
treatment.  In addition, wastewater samples were collected at
thirty-eight of the plants visited in order to quantitate the level
of pollutants in the waste streams.  Sampling was utilized to
determine the source and quantity of pollutants in the raw process
wastewater and the treated effluent from a cross-section of plants
in the E&EC Category.

5.l.1Pollutants Analyzed

The chemical pollutants sought in analytical procedures fall into
three groups:  Conventional, non-conventional, and toxics.  The
latter group comprises the 126 chemicals found in the priority
pollutant list shown in Table 5-1 (p. 5-11).

Conventional pollutants are those generally treatable by secondary
municipal wastewater treatment.  The conventional pollutants
examined for this study are:

             pH
             Biochemical Oxygen Demand (BOD)
             Oil and Grease (O&G)
             Total Suspended Solids (TSS)

Non-conventional pollutants are simply those which are neither
conventional nor on the list of toxic pollutants.  The non-
conventional pollutants listed on page 5-2 were examined in one or
more subcategories of the E&EC industry.
                                 5-1

-------
             Bismuth                  Hagnanese
             Europium                 Vanadium
             Fluoride                 Boron
             Gadolinium               Barium
             Gallium                  Molybdenum
             Indium                   Tin
             Lithium                  Cobalt
             Niobium                  Iron
             Tellurium                Titanium
             Total Organic Carbon     Xylenes
             Total Phenols            Alkyl Epoxides
             Yttrium                  Platinum
             Calcium                  Palladium
             Magnesium                Gold
             Aluminum


5.1.2  Sampling Methodology

During the initial visit to a facility, a selection was made of
sampling points so as to best characterize process wastes and
evaluate the efficiency of any wastewater treatment.  The nature of
the wastewater flow at each selected sampling point then determined
the method of sampling, i.e., automatic composite or grab
composite.  The sampling points were of individual raw or treated
process waste streams, or treated effluent.

Each sample was collected whenever possible by an automatic time
series compositor over a single 24-hour sampling period.  When
automatic compositing was not possible or appropriate, as for
volatile organics. grab samples were taken at intervcils over the
same period, and were composited manually.  When a sample was taken
for analysis of toxic organics. a blank was also taken to determine
the level of contamination inherent to the sampling and
transportation procedures.

Each sample was divided into several portions and preserved, when
necessary, in accordance with established procedures for the
measurement of toxic and classical pollutants.  Samples were shipped
in ice-cooled containers by the best available route to
EPA-contracted laboratories for analysis.  Chain of custody for the
samples was maintained through the EPA Sample Control Center
tracking forms.

5.1.3  Analytical Methods

The analytical techniques for the identification and quantitation of
toxic pollutants were those described in Sampling and Analysis
Procedures for Screening of Industrial Effluents for Priority
Pollutants, revised in April 1977.
                                 5-2

-------
In the laboratory, samples for organic pollutant analysis were
separated by specific extraction procedures into acid (A),  base/
neutral (B/N), and pesticide (P) fractions.  Volatile organic
samples (Ľ) were taken separately as a series of grab samples at
four-hour intervals and composited in the laboratory.  The analysis
of these fractions included the application of strict quality
control techniques including the use of standards, blanks,  and
spikes.  Gas ehroraatography and gas chromatography/mass spectrometry
were the analytical procedure? used for the organic pollutants.  Two
other analytical methods were used for the measurement of toxic
metals:  Flameless atomic absorption and inductively coupled argon
plasma spectrometric analysis (ICAP).  The metals determined by each
method were:

        Flameless AA                  ICAP

        Antimony                      Beryllium
        Arsenic                       Cadmium
        Selenium                      Chromium
        Silver                        Copper
        Thallium                      Lead
                                      Nickel
                                      Zinc

Mercury was analyzed by a special manual cold-vapor atomic
absorption technique.

For the analysis of conventional and non-conventional pollutants.
procedures described by EPA were followed. The following conventions
were used in quantifying the levels determined by analysis:

     o    Pollutants detected at levels below the quantitation
          limit are reported as "less than" (<) the quantitation
          limit.  All other pollutants are reported as the
          measured value.

     o    Sample Blanks - Blank samples of organic-free dis-
          tilled water were placed adjacent to sampling points
          to detect airborne contamination of water samples.
          These sample blank data are not subtracted from the
          analysis results, but. rather, are shown as a (B) next
          to the pollutant found in both the sample and the
          blank.  The tables show data for total toxic organics,
          toxic and non-toxic metals, and other pollutants.

     o    Blank Entries - Entries were left blank when the para-
          meter was not detected.
                                 S-3

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 5.2   SEMICONDUCTORS

 5,2.1 Wastewater  Flows

 Table 5-2  presents a  summary  of  the  quantities  of wastewater gener-
 ated  by  the  Semiconductor  subcategory.


                               TABLE  5-2

                       SEMICONDUCTOR  SUBCATEGORY


 PROCESS  WASTEWATER FLOW:

       Maximum                 Minimum              Average
   1/dav (gal/dav)         I/day  (gal/day)       I/day  (gal/day)

 11.100.000 (2,940.000)   212.000 (56.000)     594,000  (157.000)

 CONCENTRATED FLUORIDE  WASTEWATER FLOW:

      5.450     (1,440)         95    (25)          678     (179)


 Total  Subcategory  Process Water  Use  = 193,000.000 liters/day
   (51,000,000 gal/day)


 5.2.2  Wastewater  Sources

 Contact water is used  throughout the production of semiconductors.
 Plant  incoming water is first  pretreated by deionization to provide
 ultrapure water for processing steps.  This ultrapure water or
 deionized  (DI) water is used to  formulate acids; to rinse wafers
 after processing steps; to provide a medium for collecting exhaust
 gases from diffusion furnaces, solvents, and acid baths; and to
 clean equipment and materials  used in semiconductor production.
Water also cools and lubricates  the diamond saws and grinding
machines used to slice, lap, and dice wafers during processing.

 .5.2.3  Pollutants Found and Sources of These Pollutants

The major pollutants found at  facilities in the Semiconductor
subcategory are as follows:

                  Fluoride
                  Toxic Organics
                  pH  •
                                 5-4

-------
The process steps associated with the sources of these pollutants
are described in Section 4.1.3 (p. 4-2).  Table 5-3 (p. 5-13)
summarizes pollutant concentration data for the sampled raw waste
streams.  Tables 5-4 through 5-15 (pages 5-15 through 5-73) present
the analytical data for twelve sampled plants in the Semiconductor
subcategory.C1)

Fluoride — The source of fluoride is hydrofluoric acid, which is
used as an etchant and a cleaner.  Certain areas of the basis
material are etched to provide surfaces receptive to the entry of
dopants that are subsequently added to the wafer.  The major source
of fluoride comes from the discharge of spent hydrofluoric acid
after its use in etching.  (The flows of this waste steam are shown
in Table 5-2.)  Minor quantities of fluoride enter the plant
wastewater from rinses of etched or cleaned wafers.

Toxic organics -- The sources of toxic organics are solvents used
for drying the wafer after rinsing, developing of photoresist.
stripping of photoresist, and cleaning.  A further discussion of the
sources of toxic organics is presented in Section 7.

pH — This parameter may be very high or very low.  High pH results
from the use of alkalis for caustic cleaning.  Low pH results from
the use of acids for etching and cleaning.

Several toxic metals were found in the wastewater because of
electroplating operations associated with semiconductor
manufacture.  These metals are chromium, copper, nickel and lead.
and are covered under the final electroplating or proposed metal
finishing effluent limitations and standards.

5.3  ELECTRONIC CRYSTALS

5.3.1  Wastewater Flows

The following table  (5-16) contains a summary of the wastewater
flows generated in the Electronic Crystals subcategory.

(i)   Several corrections have been made to  the  data tables
      presented in the proposed development  document of July  1982
      (EPA 440/1-82/075-b).  Data were  either not transcribed or
      were incorrectly transcribed from laboratory analytical
      reports.  In addition, stream descriptions have  been changed
      to provide consistency among plants  (i.e.. frequently plants
      title their streams differently).
                                  5-5

-------
                           TABLE 5-16

           SUMMARY OF WASTEWATER QUANTITIES GENERATED
             IN THE ELECTRONIC CRYSTALS SUBCATEGORY

                              Wastewater Discharge  Liters/day
             No. of Plants        Min      Max        Mean

All Plants         49              95   1.839.800   112.400

5.3.2  Wastewater Sources

The major source of wastewater from the manufacture of electronic
crystals is from rinses associated with crystal fabrication,
although some wastewater may be generated from crystal growing
operations.  Fabrication steps generating wastewater are slicing.
lapping, grinding, polishing, etching, and cleaning of grown
crystals.  Certain growth processees generate a large volume of
wastewater from the discharge of spent solutions of sodium hydroxide
and sodium carbonate after each crystal growth cycle.

5.3.3  Pollutants Found and the Sources of These Pollutants

The major pollutants of concern from the Electronic Crystals
subcategory are:

     Toxic Organics
     Fluoride
     Arsenic
     TSS
     PH

The process steps associated with the sources of these pollutants
are described in Section 4.2.3 on page 4-10.  Table 5-17 (p. 5-74)
summarizes the occurrence and levels at which these pollutants are
found based on the sampling and analysis of raw wastes from eight
crystals facilities.  Concentrations represent total raw wastes
after flow-proportioning individual discharge streams.  Tables 5-18
through 5-25 (p. 5-75 through p. 5-94).  summarize the analytical
data obtained frome each of the plants sampled and identify products
produced and wastewater flows.C1)

Toxic organics — found in wastewater from the manufacture of
electronic crystals as a result of the use of solvents such as

(i)    Several corrections have been made to the data tables
      presented in the proposed development document of July 1982
      (EPA 440/1-82/075-b).  Data were either not transcribed or
      were incorrectly transcribed from laboratory analytical
      reports.  In addition, stream descriptions have been changed
      to provide consistency among plants (i.e.. frequently plants.
      title their streams differently).


                                 5-6

-------
isopropyl alcohol. 1,1.1-triehloroethane, Freon, and acetone.  These
materials are used for cleaning and drying of crystals.  Another
source of toxic organics could be contaminants in oils used as
lubricants in slicing and grinding operations.  A further discussion
of the sources of toxic organics is presented in Section 7.

Fluoride -- has as its source the use of hydrofluoric acid or
ammonium bifluoride for etching electronic crystals.  A minor source
of fluoride is from the etch rinse process.

Arsenic -- originates from the gallium arsenide and indium arsenide
used as raw material for crystals.  Process steps generating
wastewater containing arsenic are cleaning of the crystal-growing
equipment, slicing and grinding operations, and etching and rinsing
steps.

Total Suspended Solids -- common in crystals manufacturing waste
streams as crystal grit from slicing and grinding operations.  Grit
and abrasives wastes are also generated by grinding and lapping
operations.

pH — may be very high or very low.  High pH results from the
presence of excess alkali such as sodium hydroxide or sodium
carbonate.  The alkali may come from crystal growth processes or
from caustic cleaning and rinsing.  Low pH results from the use of
acid for etching and cleaning operations.

Several toxic metals were found in the wastewater because of
electroplating operations associated with electronic crystals
manufacture.  These metals are chromium, copper, lead, nickel, and
zinc, and are regulated under the Metal Finishing Category.

5.4  CARBON AND GRAPHITS PRODUCTS

The average flow of wastewater from these plants is 24.2 x 106 I/day
(6,388,400 gal/day).  The major pollutants found and their
concentrations are presented below:

Toxic Pollutants
                           Raw Waste Load
                           Concentration      Raw Waste Load
   Pollutant               	(mq/1)	     kg/day (Ibs/day)

Total Toxic Inorganics         0.080           1.93    (4.26)

Bis(2-ethylhexyl)phthalate     0.042           1.02    (2.24)
Methylene Chloride             0.013           0.31    (0.69)

Total Toxic Organics           0.080           1.93    (4.26)
                                 5-7

-------
  Raw waste concentrations are based on flow weighted means from four
  plants.  For toxic inorganics only flow weighted mean concentra-
  tions greater than or equal to 0.1 mg/1 are shown.  For toxic
  organics only flow weighted mean concentrations greater or equal to
  O.O1 mg/1 are shown.

  5.5  MICA P&PER

  The average flow of wastewater from these plants is 3.50 x 106 I/day
  (926,000 gal/day).  The major pollutants found and their concentra-
  tions are presented below:

  Toxic Pollutants
                             Raw Waste Load
                             Concentration      Raw Waste Load
     Pollutant                   (mcr/1)         kg/day (1 bs / day)

  Total Toxic Inorganics         0.055           0.20   (0.44)

  1,1,1-Trichloroethane          0.180*          0.63   (1.39)
  Methylene Chloride             0.029*          0.10   (0.22)

  Total Toxic Organics           0.209           0.73   (1.61)

  *Not confirmed by process or raw material usage.

  Raw waste concentrations are based on raw waste data from one
  plant.  For toxic organics only concentrations greater than or equal
  to 0.01 mg/1 are shown.

  5.6  INCANDESCENT LAMPS

MThe average flow of wastewater from these plants is 7.74 x 10.6 I/day
^(540,100 galYday).  The major pollutants found and their concentra-
  tions are described below:

  Toxic Pollutants
                             Raw Waste Load
                             Concentration      Raw Waste Load
     Pollutant               	(mg/1)	     kg/day (Ibs/day)
  Chromium                       0.714           1.46   (3.22)
  Copper                         0.420           0.86   (1.89)
  Lead                           0.11            0.23   (0.50)
  Total Toxic Inorganics         1.377           2.82   (6.21)
  Methylene Chloride             0.048           0.05   (0.11)
  Chloroform                     0.024           0.10   (O.22)
  Dichlorobromomethane           0.010           0.03   (0.05)
  Total Toxic Organics           0.082           0.17   (0.38)
                                   5-8

-------
Raw waste concentrations are based on flow weighted means from three
plants.  For toxic inorganics only flow weighted mean concentrations
greater than or equal to 0.1 mg/1 are shown.  For toxic organics
only flow weighted mean concentrations greater than or equal to 0.01
mg/1 are shown.

5.7  FLUORESCENT LAMPS

The major pollutants found in wastewaters from these plants and
their concentrations or mass loadings are presented below:


Toxic Pollutants
                           Raw Waste Load
                           Concentration      Raw Waste Load
   Pollutant                   (ma/1)         kg/day (Ibs/day)

Antimony                       0.458
Cadmium                        0.307

Total Toxic Inorganics           --            0.80   (1.76)

Methylene Chloride             0.063
Toluene                        0.011

Total Toxic Organics             —            0.07   (0.16)


5.8  FUEL CELLS

Only a few plants manufacture fuel cells and these do not do so on a
regular basis.  In addition, all pollutants found were at quantities
too low to be effectively treated.

5.9  MAGNETIC COATINGS

This subcategory discharges only a small amount of pollutants to
water.  The average wastewater discharge from this subcategory is
19.000 I/day (5.000 gal/day).  The total toxic metals discharge for
the subcategory is 0.045 kg/day  (0.099 Ibs/day). total toxic
organics is 0.018 kg/day (0.040  Ibs/day).

5.10  RESISTORS

No wastewaters result from the manufacture of resistors.

5.11  DRY TRANSFORMERS

No wastewaters result from the manufacture of dry transformers.
                                 5-9

-------
5.12  ELECTRON TUBES (Phase II)

The agency has proposed regulations for this subcategory under
Electrical and Electronic Components, Phase II.

5.13  PHOSPHORESCENT COATINGS (Phase II)

The Agency has proposed regulations for this subcategory as
luminescent materials under Electrical and Electronic Components,
Phase II.

5.14  ALL OTHER SUBCATEGORISS

Information obtained from plant visits showed that wastewater
discharges in the following subcategories result primarily from
processes associated with metal finishing and, in the case of
insulated plastic and plastic-laminated devices, from processes
associated with the EPA study on plastics molding and forming.
Because these processes are studied elsewhere, the E&EC project
limited its sampling effort in these areas.

          Switchgear and Fuses
          Resistance Heaters
          Ferrite Electronic Parts
          Insulated Wire and Cable
          Fluid-filled Capacitors
          Fluid-filled Transformers
          Insulated Devices — Plastics and Plastic Laminated
          Motors. Generators,  and Alternators
          Fixed Capacitors
                                 5-10

-------
                                                                                5--1
                                                                   THE PRIORITY POLLUTANTS
Ul
 I
H
 1.
 2.
 3.
 4.
 5.
 6.
 7.
 8.
 9.
10.
11,
12.
13.
14.
15.
16.
18.
19.
20.
21.
22.
23.
24.
25.
26,
27.
28.
29.
30.
31.
32.
33.
34.
35.
36.
31.
38.
39.
40.
41.
42.
43.
44.
45.
Acenaphthene                                 46.
Rcrolein                                     47,
*crylonttrlle                                48.
Benzene                                      SI.
Benzidine                                    52.
Carbon Tetrachlorlde (Tetrachloroaaethane)    53.
chlorobenzene            .                    54.
1,2,4-frichlorobenzene                       55.
Hexachlorobenzene                            56.
1,2-Dlchlorethane                            57.
1,1,1-Trtchloroethane                        58.
llexach loroethane                             59.
1,1-Dlchloroethane                           60.
1,1,2-Trlchloroethane                        61.
1,1,2,2-fetrachloroethane                    62,
chloroethane                                 63.
Bls(2-chloroethyl>ether                      64.
2-Chloroethyl Vinyl Ether (Mixed)            65.
2-Chloronaphthalenc                          66.
2,4,6-Trlchlorophenol                        67.
p-chloro-m-cresol                            68.
Chloroform (Trlchloromethane)                69.
2-Chlorophenol                               70.
  2-Dichlorobenzene                          71.
  3-Dlchlorobenzene                          12,
  4-Dlchlorobenzene                          13.
  S'-Dlchlorobenzldine                       74.
  1-Dlchloroethylene                         75.
  2-trans-Dichloroethylene                   76.
2,4-Dlchlorophenol                           77.
1,2-Dlchloropropane                          18.
1.3-Dlchloropropylene(1.3-Dlrhloropropene)   79.
2,4-Dlraethyl Phenol                          80.
2,4-Dlnltrotoluene                           81.
2,6-Dlnttrotoluene                           82.
1,2-Dlphenylhydrazlne                        83.
Ethylbenzene                                 84,
Fluoranthene                                 85.
4-chlorophenyl Phenyl Ether                  86,
4-Bromophenyl Phenyl Ether                   87.
Bls(2-chlorolsopropyl)ethRr                  88.
Bls(2-chloroethoxy)methane                   89.
Methylene chlorlde(Dlchloromethane)          90.
Methyl Chlorlde(Chlorocnethane)
Methyl Bromide  (Bromomethane)
Bromotorn  (Trlbromomethane)
Dlch lorobrcmcxne thane
Chlorodlbromomethane
Hexachlorobutadlene
Hexachlorocyclopentadlene
Isophorone
Naphthalene
Nitrobenzene
2-Nltrophenol
4-Hltrophenol
2,4-Dtnltrophenol
4,6-Dlnltro- o-cresol
N-Nltrosodlmethylamlne
N-Nltrosodlphenylamlne
N-Hltrosodl-n- propylamlne
Pentachlorophenol
Phenol
Bls(2-ethylhexyl)  Phthalate
Butyl Benzyl Phthalate
Dl-n-butyl Phthalate
Dt-n-octyl Phthalate
Diethyl Phthalate
Dimethyl Phthalate
1,2--Benzanthracene [Bcnzo(a)anthraceneJ
Benzo(a)Pyrene  (3,4-Benzopyrene)
3,4-Benzofluoranthene  (Benzo(b)fluoranthpne]
11,12-Benzofluoranthene  [BeiuoSkjfluorantheno)
Chrysene
Acenaphthylene
Anthracene
1.12-Benzoperylpne [Bf>nx.o(ghl)petyli;n<>]
Fluorene
Phenanthrene
1,2,5,6- Dlbenzathracene  (r>tb("nzo(a,h)anthra<-i'nel
Indeno(1.2,3-cd)pyrŤne (2,3 O  PhfnylenepyiPnu)
Pyrene
Tetrachloroethylene
Toluene
Trlchloroethylene
Vinyl Chloride  (chloroethylmie)
Aldrln
Dleldrln

-------
THE
Ul
 I
H
TOXIC POLLUTKHT

 91.  Chlordans
      (Technical Mixture and Hetabolltes)
 92.  4,
-------
                           TABLE 5-3

                         SEMICONDUCTOR
                 SUMMARY OF THE RAW WASTE DATA
Toxic Organics
  Parameter
Plant 42044
    mg/1
Plant 04294
    mg/1
 8 1.2.4-Trichlorobenzene
21 2.4.6-Trichlorophenol
23 Chloroform
25 1.2-Dichlorobenzene
26 1.3-Dichlorobenzene
27 1.4-Dichlorobenzene
38 Ethylbenzene
44 Methylene chloride
55 Naphthalene
57 2-Nitrophenol
64 Pentachlorophenol
65 Phenol
66 Bis(2-ethylhexyl)
    phthalate
68 Di-n-butyl phthalate
85 Tetrachloroethylene
87 Trichloroethylene
     ND**
     ND
   <0.01
    0.04
   <0.01
   <0.01
     ND
    0.044
     ND
     ND
     ND
    0.180

    0.010
   <0.01
    O.O15
     ND
   27.1
    0.013
    0.012
  186.0
    7.4
    7.4
    0.107
    0.101
    1.504
    0.039
    0.250
    0.170

    0.012
    0.017
    0.143
    0.204
   TOTAL TOXIC ORGANICS
    0.279
  230.472
 * This table shows the range of toxic organics observed.
** Not detected
                               5-13

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                              TABLE 5-3
                            SEMICONDUCTOR
                      SUMMARY OP RAW WASTE DATA
TOXIC METALS
                                  Min. Con.   Max. Cone.   Mean Cone,
Parameter                            roq/1        ntq/1         mq/1

  114    Antimony                  <0.001       0.187        0.013
  115    Arsenic                   <0.003       0.067        0.015
  117    Beryllium                 <0.001      <0.015_      <0.001
  118    Cadmium                   <0.001       0.008        0.003
  119    Chromium t                <0.001       1.150        0.146
  120    Copper t                  <0.005       2.588        0.570
  122    Lead t                    <0.04        1.459        0.135
  123    Mercury                   <0.001       0.051        0.003
  124    Nickel t                   0.005       4.964        0.500
  125    Selenium                  <0.002       0.045        0.015
  126    Silver                    <0.001       0.013        0.002
  127    Thallium                  <0.001       0.012       <0.001
  128    Zinc.                      0.001       0.289        0.092
         Total Toxic Inorganics     0.063      10.848        1.496
  CONVENTIONAL POLLUTANTS

         Oil & Grease                ND
         Total Suspended Solids*     ND
         Biochemical Oxygen Demand   ND

  NON-CONVENTIONAL POLLUTANTS

         Total Organic Carbon        ND
         Fluoride                  26.6
  6.8
 14
 30
 80
146.5
 3.9
 6.9
21.3
55.7
65.5
      t - These metals are associated with metal finishing
          operations.
     ND - Not detected.
      * - Data for TSS is from plants producing semiconductors  only,
                                  5-14

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                                                                         TABLE 5-4
                                                                 SEMICONDUCTOR PROCESS WASTES
                                                                         PLANT 02040
Stream Description
Flow It /hr>
Duration (hrs)
sample ID No.
         TOXIC ORGAMICS

           4 Benzene
           7 chlorobenzene
           8 1,2,4-Trlchlorobenzene
          11 1,1,1-Trichloroethane
          13 1,1-Dlchloroethane
          23 Chloroform
          24 2-Cnlorophenol
          25 1,2-Bichlorobenzene
          27 1,4-Dlchlorobenzene
          29 1.1-Dichloroethylene
          38 Ethylbenzene
          44 Methylene chloride
          48 Dlchlorobrocnomethane
          51 chlorodibromomethane
m        57 2-dltrophenol
 I         58 4-Nitrophenol
I-1        65 Phenol
01        66 Bis(2-ethylhexyl)phthalate
          67 Butyl benzyl  phthalate
          68 Di-N-butyl phthalate
          69 Di-N-octyl phthalate
          70 Dlethyl phthalate
          71 DlBtethyl phthalate
          86 Toluene
          87 Trichloroethylene
         121 Cyanide*

         Total Toxic Organics

         TOXIC INORGANICS

         114 Antimony
         115 Arsenic
         117 Beryllium
         118 Cadmium
         119 chromium
         120 copper
         122 Lead
         123 Mercury
         124 Nickel
         125 Selenium
      Scrubber Vastest
           5437
             24
           3480
Concentration    Mass Load
    mg/t           kg/day
Equipment Cleaning Vastest
             31.5
             24
           3481
Concentration    Mass Load
    mg/l           kg/day
           Wafer Finishing Hastes
                    2178
                      24
                    3477
         Concentration    Mass Load
             mg/l           kg/day
                                                                                                 <0.01


                                                                                                  0.01

                                                                                                  0.047

                                                                                                  0.012
                                                                                                 <0,01
                                     <0.005
                                      0.006
                                     <0.001
                                     <0.001
                                      0.009
                                      0.002
                                     <0.001
                                     <0.001
                                     <0.001
                                     <0.003
                     0.0008
                     0.001
                     0.0003
     <0.005
      0.074
     <0.001
      0.05
     <0.001
     <0.001
      0.25
     <0.001
      0.90
     <0.003
0.00006

0.00004


0.0002

0.0007
                                                                                                  0.046
                                                                                                 <0.01
                                                                                                 <0.01
                                                                                                 <0.01
                                                                                                  0.010

                                                                                                 <0.01
                                                                                                 <0.0l
                                                                                                 <0.01
                                                                                                  0.105
<0.005
 0.004
<0.001
<0.001
<0.001
 0.056
 0.034
 0.001
<0.001
 0.003
                                                                                 0.0025

                                                                                 0.0006



                                                                                 0.002

                                                                                 0.0005



                                                                                 0.0005
                                                                                                                 0.0055
                                                                                 0.0002
0.003
0.002
0.00005
<0.005
 0.01
<0.00l
 0.002
 0.341
 0.413
 0.025
<0,001
 4.964
<0.003
                                                           12.24

                                                            0.56

                                                            0.76
                                                            4.56
                                    Effluent
                                  463505
                                      24
                                    3478
                         Concentration    Mass Load
                                            kg/day
                                                                 <0.01
                                                                 <0.01

                                                                  1.10
                                                                 <0.01
                                                                  0.05
                                                                 <0.01
                                                                  0.068
                                                                  0,410
                                                                 <0.01
                                                                 <0,01
                                                                  0.095

                                                                 <0.01
                                                                 <0.01
                                                                 <0.01
                                                                  0.270
                                                                  0.019

                                                                 <0.01
                                                                 <0.01
                                                                 <0.01

                                                                  0.14
                                                                 <0.01
                                                                 <0.005

                                                                  2,152
                                                            3.0
                                                            0.21
                                                                                                                                               1.56
                                                                                                                                              23.94
 0.11

 0.02
 3.79
 4.59
 0,28

55.2
* Mot included in Total Toxic Organics summation.
t Organics not analyzed.

-------
                                                                            TABLE 5-4  (Continued)

                                                                         SBHICOMDUeTOR PROCESS WASTES
                                                                                 PUIHT 02040
Ul
 I
H
O1
        Stream Description
        Flow (I /hr)
        Duration (hrs)
        Sample ID No.
TOXIC IHORGANICS (Continued)

126 Silver
127 Thallium
128 Zinc

Total foxlc Inorganics

KON-CGNVSHTIONAL POLLUfftMIS

    Aluminum
    Barium
    Boron
    Calcium
    Cobalt
    Gold
    Iron
    Magnesium
    Manganese
    Molybdenum
    Palladium
    Platinum
    Sodium
    Tellurium
    Tin
    Titanium
    Vanadium
    yttrium
    Phenols
    Total Organic Carbon
    Fluoride

CONVENTIOHAL POLLUTANTS

    Oil & Grease
    Total Suspended Solids
    Biochemical Oxygen Demand
    pH
                                       Scrubber Wastes
                                           5437
                                             24
                                           3480
                                Concentration    Mass toad
                                    mg/l           kg/day
                            Equipment Cleaning Wastes
                                      31.5
                                      24
                                    3481
                         Concentration    Mass Load
                             mg/l           kg/day
                                         Wafer Finishing Wastes
                                                  2178
                                                    24
                                                  3477
                                       Concentration    Mass load
                                           mg/l           kg/day
                                                                 Effluent
                                                                 463505
                                                                     24
                                                                   3478
                                                        Concentration   Mass Load
                                                            mg/l           kg/day
                                             <0.005
                                             <0,025
                                              0.04

                                              0.057
<0.001
 0.026
 0.267
36,36
 0.002
<0.02
 0.012
19.34
 0.009
 0.005
<0.08
<0.05
50.52
<0.02
 0.016
 0.001
 0.130
<0.001
 0.009
 6 ft
 0.48 •ť
                                             <2
                                             <5
                0.005

                0.007
0.003
0.035

0.0003

0.0016

0.0012
0.0007
                                                             0.0021

                                                             o.on

                                                             0.0012
                                                             0.783
                                                             0.063
                0.26
                0.65
              <0.005
              <0.025
               O.BO

               2.076
 16.31
  0.05
 60.66
 45.92
  0.48
 <0.02
  0.46
 23.78
 <0.001
  0.57
 <0.08
 <0.05
161.57
 <0.02
  1.01
  0.03
  0.16
 <0.001
                                                                          290
0.0006

0.0016



0.012
0.00004
0.046

0.0004

0.0003


0.0004
                              0.0008
                              0.00002
                              0.0001
                                                                                           0.22
                NA
                NA
                NA
                               <0.005
                               <0.025
                                0.070

                                0.165
 0.155
 0.003
 0.251
 1.710
<0.001
<0.02
 0.109
 0.319
 0.001
 0.008
<0.08
<0.05
73.021
<0.02
 0.047
 0.022
 0.003
<0.001
 0.039
26
 0.27
                                7.0
                                5.0
                               15
                0.0037

                0.0086
                                                                                                                         0.008
                                                                                                                         0.0002
                                                                                                                         0.013
0.0057

0.00005
0.0042
                              0.0025
                              0.001
                              0.00016

                              0.002
                              1.36
                              0.014
                              0.37
                              0.26
                              0.78
              <0.005
              <0.025
               0.111

               5.866
 1.23

65.25
0.323
0.024
0.690
46.1
0.147
<0.02
0.813
17.12
0.014
0.006
<0.08
<0.05
192.501
<0.02
0.297
0.003
0.123
<0.001
6.1
37
52.0
3.59
0.27
7.68

1.64

9.04

0.16
0.067




3.30
0.03
1.37

67.9
411.6
578.5
                               4
                              62
                              52
                             44.5
                            689.7
                            578.5
        ft* Data Incorrectly transcribed at proposal,  (see note on page 5-5.)

-------
                                            TABLE 5-4  (Continued)

                                         SEMICONDUCTOR PROCESS WASTES
                                                 PLNfT 02040
        Stream Description
        Plow (I /hr)
        Duration (hrs)
        Saaple ID No.
        TOXIC OROANICS
   Wafer Finishing Wastes
           10402
              24
           03476
concentration    Maes Load
    Ťg/t           kg/day
                 Scrubber Vastest
                     2580
                       24
                    03479
         Concentration    Mass Load
             og/l           kg/day
          4  Benzene
          7  Chlorobenzene
          8  1,2,4-lrichlorobenzene
         11  1,1.1-Trichloroethane             <0.01
         13  1,1-Dichloroethane                 0.01
         23  Chloroform                        0.02
         24  2-Chlorophenol
         25  1,2-Dichlorobenzene               <0.01
         27  1,4-Dichlorobenzene
         29  1,1-Dichloroethylene
         38  Ethylbenzene
         44  Kethylene  chloride                 0,035
         51  Chlorodibromoinethane
Cfi       57  2-Hitrophenol
I        58  4-Nitrophenol
{"!       65  Phenol                             0.031
         66  Bis(2-ethylhe!iyl)phthalate        <0.01
         67  Butyl benzyl phthalate
         68  Di-M-butyl phthalate              <0.01
         69  Di-Ť-octyl phthalat*
         70  Diethyl phthalate                 <0.01
         11  Dimethyl phthalate
         86  Toluene
         87  Trichloroethylene
        121  Cyanide*

        Total  Toxic Organics                   0.086
        TOXIC  INORGANICS

        114 Antimony
        115 Arsenic
        117 Beryllium
        118 Cadmium
        119 chromium
        120 copper
        122 Lead
        123 Hercury
        124 Nickel
        125 Selenium
      0.007
      0.003
     <0.001
     <0.001
     <0.001
      0.046
      0.001
     <0.001
     <0.001
     <0.003
                      NA

                     0.002
                     0.005
                     0.009
                     o.ooa
                     0.021
0.002
0.001
0.012
0.0002
 0.017
 0.007
<0.001
<0.001
 0.011
 0.007
<0.001
<0.001
<0.001
<0.003
0.001
0.0004
                              0.0007
                              0.0004
        * Hot  included  in Total Toxic Organics  summation.
        t Organics not  analyzed

-------
                                    TABLE 5-4 (Continued)

                                 SSmCOKDUCrOR PROCESS WASTES
                                         PLANT 02040
stream Description
Plow (I /hr)
Duration (hrs)
Sanple ID Ho.
TOXIC INORGANICS (Continued)

126 Silver
127 thallium
128 Zinc

Total Toxic Inorganics

HON-CONVEHTIOHftL POLUWMITS
   Water Finishing Wastes
           10402
              24
           03476
Concentration    Mass toad
    •3/1           kg/day
                   Scrubber Wastes
                       2580
                         24
                      03479
           concentration   Mass Load
               ťf/l           kg/day





Ul
1
J— '
00









aluminum
Barium
Boron
Caiciun
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
    Phenols
    Total Organic Carbon
    Fluoride

CONVENTIONAL POLLUTANTS

    Oil & Grease
    Total Suspended Solids
    Biochemical Oxygen Demand
    pH
     <0.005
     <0.025
      1.113
      0.015
      0.024
      0.222
     28.040
     <0.001
     <0.020
      0.169
     13.500
      0.006
      0.001
     <0.080
     <0.050
    111.601
     <0.020
      0.023
      0.006
      0.091
     <0.001
      0.032
    137 f
      0.48 •
      9.0
    385
    310
  0.278
                                                     0.004
                                                     0.006
                                                     0.055
                                                     0.042

                                                     0.002
                                                     0.0002
  0.006
  0.002
  0.023

  0.008
 34.2
  0.12
  2.247
220.9
 77.39
<0.005
<0.025
 0.059
<0.001
 0.026
 0.164
35.830
 0.003
<0.020
 0.047
19.080
•eO.OOl
 0.004
<0.080
<0.050
49.711
<0.020
 0.011

-------
                                          TABLE 5-5

                                 SBHICOHDUetOR PROCESS HASTES
                                         PUWT 02347
Stream Description
Flow (I /hr)
Duration (hrs)
Sample ID Mo.
      TOXIC O8GRMICS

        4 Benzene
        7 Chlorobenzene
        8 1,2.4-Trlchlorobenzene
       11 1,1.1-Trichloroethane
       23 Chloroform
       24 2-chlorophenol
       25 1,2-Dlchlorobenzene
       27 1,4-Dlchlorobenzene
       29 1,1-Dichloroethylene
       31 2,4-Dichlorophenol
       37 1,2-Diphenylhydrazlne
       38 Ethylbenzene
       39 Fluoranthene
in     44 Hethylene chloride
 I      55 Naphthalene
{jj     57 2-Mitrophenol
       65 Phenol
       66 Bis(2-ethylhexyl)phthalate
       67 Butyl benzyl phthalate
       68 Di-N butyl phthalate
       69 Di-N-octyl phthalate
       70 Diethy 1 phthalate
       85 Tetrachloroethylene
       86 Toluene
       87 Trichloroethylene tf
      121 Cyanide*

      Total Toxic Organlcs

      TOXIC INORGftHICS

      114 Antimony
      115 Arsenic
      117 Beryllium
      118 Cadmium
      119 Chromium
      120 Copper
      122 Lead
      123 Mercury
      124 Nickel
      125 Selenium
        Scrubber Hastes
            6099
              24
           03474
Concentration    Mass Load
    rag/I           kg/day
          Effluent
         130,688
              24
           03475
Concentration    Mass Load
    ng/t           kg/day
                                      0.190
                                      0.170
                                      2.6
                                      0.011
                                     <0.01
                                     <0.01

                                     <0.01

                                      1.9
                                      0.220
                                     <0.01

                                     <0.01
                                     <0.01

                                       HA

                                      5.091
                                     <0.005
                                      0.003
                                     <0.001
                                     <0,001
                                     <0.001
                                     <0.001
                                     <0.001
                                      0.001
                                     <0.001
                                     <0.003
                                                     0.128
                     0.025
                     0.38
                     0.0016
                     0.278
                                                     0.032
                     0.745
                     0.0004
                     0.00015
     <0.01 t
      0.089
      3.5 I*
      0.022
     <0.01
      0.860
      0.170

      0.017
     <0.01
     <0.01
     <0.01
      2.4
     <0.01
     <0.01
      0.810
      0.013

     <0.01
     <0.01
     <0.01
     20.0 I
     <0.0l

      0.075 *

     27.881
     <0.005
      0.002
     <0.001
     <0.001
      0.110
      1.182
      0.042
      0.001
     <0.001
     <0.003
 0.279
10.98
 0.069
 0.53

 0.053



 7.53
                                                   2.54
                                                   0.04
62.73


 0.235

87.45




 0.0063
                                                   0.345
                                                   3.71
                                                   0.132
                                                   0.003
 * Mot Included In Total Toxic Organlcs summation.
 I Data not transcribed from analytical sheets at proposal.   (See note on page 5-5.)
M Data Incorrectly transcribed at proposal.  (See note on page 5-5.)

-------
                                           TMIS 5-5 (Continued)

                                        SaUCOMDOCtOR P80C8SS WASTES
                                                PLANT 02347
Ui
 I
W
o
       Stream Description
       Flow U /hr)
       Duration (hrs)
       Sample ID Ho.
TOXIC IHOROAHICS (Continued)

126 Silver
127 Thai HUB
128 Zinc

Total Toxic Inorganics

HOH-COHVBOTIONAL POLLUTANTS

    Aluminum
    Barium
    Boron
    Calclun
    Cobalt
    Gold
    Iron
    Magnesium
    Manganese
    Molybdenum
    Palladlun
    Platinum
    Sodlua
    Tellurium
    Tin
    Titanium
    Vanadium
    Yttrium
    Phenols
    total Organic Carbon
    Fluoride

CONVENTIONAL POLLUTANTS

    Oil & Grease
    Total Suspended solids
    Biochemical Oxygen Demand
    pM
                                            6099
                                              24
                                           03474
                                Concentration
                                    •g/l
                                            <0.005
                                            <0.025
                                             0.052

                                             0.056
 0.009
 0.039 ••
 0.121
42.31
<0.001
<0.02
 0.016 ft
11.02
<0.001
 0.008
<0.08
<0.05
43.321
<0.02
 0.011 M
<0.001 M
 0.068
 0.001
 0.88 •
10
 1.7
                                            <5 S
                                            <2 t
                                              NA
Wastes



Haas Load
kg/day


0.0076
0.008
0.0013
0.006
0.018



0.0023


0.001




0.002
0.003
0.01

0.129
1.46
0.25



Effluent
130,668
24
03475




Concentration Bass Load
ng/1
<0.005
<0.025
0.089
1.426
0.02
0.015
0.76
14.31
<0.001
<0.02
0.106
3.542
0.001
<0.001
<0.08
<0.05
116.2
<0.02
0.029
<0.001
0.015
<0.001
14 •
38
50
<5 •
<2 •
NA
kg/day


0.28
4.473
0.063
0.05
2.38



0.38

0.003





0.091

0.047

43.9
119.2
156.8



         • Data not transcribed from analytical sheets at proposal.  (See note on page 5-5.)
        it Data Incorrectly transcribed at proposal.  (See note on page 5-5.)

-------
                                                                               ťBLI  5-6

                                                                       SEMICONDUCTOR PROCESS WASTES
                                                                              PLANT 04294
U1
 I
to
      Stream Description
      Flow (t/hr)
      Duration (hrs)
      sample ID Ho.
TOXIC 08GMHCS

  4 Benzene
  7 Chlorobenzene
  8 1,2,4-Trlchlorobenzene
 11 1,1,1-Trlchloroethane
 13 1,1-Dlchloroethane
 21 2.4.6-Trlchlorophenol
 23 Chloroform
 24 2-Chlorophenol
 25 1,2-Dlchlorobenzene
 26 1,3-Dlchlorobenzene
 27 1,4-Dlchlorobenzene
 34 2.4-Dlinethylphenol
 37 l,2-01phenylhydrazlne
 38 Sthylbenzene
 39 Fluoranthene
 44 Hethylene chloride
 48 Dlchlorobronomethane
 51 Chlorodlbromomethane
 54 Isophorone
 55 Naphthalene
 57 2-Nltrophenol
 58 4-Mltrophenol
 64 Pentachlorophenol
 65 Phenol
 66 Bls{2-ethylhexyl)phthalate
 67 Butyl benzyl phthalate
 68 Dt~H-butyl phthalate
 69 Dl-H-oetyl phthalate
 70 Dlethyl phthalate
 71 Dimethyl phthalate
 85 Tetrachloroethylene
 86 Toluene
 87 Trlchloroethylene
 97 Endosulfan sulfate
103 Beta BHC
104 Gamma BHC
121 Cyanide*
Total Toxic organics
                                    Developer Quench Rinse
           Acid Hastes
                                           3647
                                Concentration
                                    ťg/t
                                                      Hass Load
                                                        kg/day
           3643
Concentration
    mg/l
                                                                        <0.01
Hass Load
  kg/day
                                           0.026
                                          <0.01
                                           0.042
                                          <0.01
                                          <0.01
                                          <0.01
                                          <0.01
                                          <0.01
                                          <0,01
                                          <0.01

                                          <0.01
                                           0,017
                                          <0.01
                                          <0.005 *
                                           0.085
                                                         <0.01
     <0.01
     <0.01
     <0.01

     <0.0l

     <0.01

     <0.01

     <0.01
     <0.01
     <0.01
                                                                        <0,005
                                                                        
-------
                                                                          fABLB 5-6 (Continued)

                                                                       sEmcoNoocfoa PROCESS WASTES
                                                                               PUNT 04294
Ui
 I
      Stream Description
      Flow  (l/hr)
      Duration  (hrs)
      Sample ID Ho.
TOXIC INORGANICS

114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 chromium
120 Copper
122 Lead
123 Mercury
124 Mickel
125 Selenium
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
                                    Developer Quench Rinse
           3641
Concentration    Mass Load
                   kg/day
                                           <0.005
                                           <0.003
                                           <0.001
                                            0.003
                                            0.004
                                            0,015
                                            0.019
                                           <0.001
                                            0.057
                                           <0.003
                                           <0.003
                                           <0.025
                                            0.022
                                            0.120
           Acid Wastes            Stripper Quench Rinse
                                          110ť*
                                           24
           3643                          3645
Concentration    Mass Load    Concentration    Bass Load
    Ťg/l           kg/day         mg/t           leg/day
      0.005
     <0.003
     <0.001
      0.003
      0.003
      0.046
      0.161
     <0.001
      0.07
     <0.003
     <0.003
     <0.025
      0.048
      0.331
                                                                                              Etching solution*
                                                                                                                                    3648
                                                                                                                         Concentration    Mass toad
                                                                                                                             wg/l           teg/day
                                                                 <0.005
                                                                 <0.003
                                                                 •cO.OOl
                                                                  0.001          0.000003
                                                                  0.001          0.000003
                                                                  0.019          0.00005
                                                                  0.012          0.00003
                                                                 <0.001
                                                                  0.005          0.00001
                                                                 <0.003
                                                                 <0.003
                                                                 <0.025
                                                                  0.032          O.OQOOB
                                                                  0.07           0.0002
       NON-CONVENTIOHftL POLLUTANTS
           Aluminum
           Bariura
           Boron
           Calcium
           Cobalt
           Gold
           Iron
           Magnesium
           Manganese
           Molybdenum
           Palladium
           platinum
           Sodium
           Telluriura
           Tin
           Titanium
           Vanadium
           Yttrium
           Phenols
           Total Organic Carbon
           Fluoride
                                      0.046
                                      0.004
                                      0.026 *
                                      1.718
                                     <0.001

                                      0.055
                                      0.077
                                      0.001
                                      0.004
                                      0.071

                                      0.023
                                      0.002
                                      0.001
                                      0.005
                                      0.014
                                     30
                                      0.15
      5.781
      0.011
     19.961
      2.371
     <0.001

      0.149
      0.142
      0.006
      0.019
      18.315

      0.203
      0.036
      0.081
      <0.001
      0.016
      <1.0
     875
                                                                  0.031
                                                                  0.006
                                                                  0.028
                                                                  0.258
                                                                 <0,00l

                                                                  0.026
                                                                  0.034
                                                                  0.001
                                                                 •cO.OOl
                                                                  0.143

                                                                  0.006
                                                                  0.001
                                                                  0.001
                                                                  0.001
                                                                  0.007
                                                                 <1.0
                                                                  0.24
0,00008
0.00002
0.00007
0.0007
0.00007
0.00009
0.000003
0.0004

0.00002
0.000003
0.000003
0.000003
0.00002

0.0006
        ** Estimated flow
         t Inorganics and non-conventionals were not analyzed
         • Data not transcribed from analytical sheets at proposal.
                                                              (See note on page 5-5.)

-------
                                                                          TABLE 5-6 (Continued)

                                                                       SEMICONDUCTOR PROCBSS HASTES
                                                                               PLANT 04294


      Stream Description                  Developer Quench Rinse               Acid Wastes            Stripper Quench Rinse         Etching Solution*
      Flow (l/hr)                                                                                             110**
      Duration (hrs)                                                                             '              24
      Sample ID No.                              364?                          3643                          3645                          3648
                                      Concentration    Mass Load    concentration    Mass Load    Concentration    Mass Load    Concentration    Mass Load
                                          tag/I           kg/day         mg/l           kg/da;         mg/l           kg/day         mg/l           kg/day

      CONVENTIONAL POLLUTANTS

          Oil 6 Grease                      3.0                          <1.0                            1.0            0.003
          Total Suspended Solids           <5.0                          31.0                           <5.0
          Biochemical Oxygen Demand        <4.0                          <4.0                           <4.0
          PM



       ** Estimated flow
        t Conventional pollutants were not analyzed
in
I
ts3
CO

-------
                                                                          TABLE 5-6 (continued*/
                                                                       SEMICONDUCTOR PROCESS WASTES
                                                                               PLAHT 04294
Ul
 I
to
*ť
      streaM Description
      Plow (l/hr)
      Duration  (hrs)
      Sample ID Ho.
      TOXIC ORGWIICS
                            Acid Wastes
                                 3650t
                      Concentration Mass Load
                         Ťg/l         rag/day
         Sfflucnt
           6273
             24
           3652
Concentration  Mass Load
   •eg/I          nig/day
          Vafer Finishing wastes    Stripper Quench Rinse     Photoresist Developer
                   3641
        Concentration  Mass Load
           ťg/l          kg/day
                             Batch
                              3644f
                   Concentration  Kass Load
                      mg/l          kg/day
          Batch
           3646f
Concentration  Mass Load
   mg/l         kg/day
  4 Benzene
  1 Chlorobenzene
  8 1,2,4-Trichlorobenzene
 11 1,1,1-Trichloroethane
 13 1,1-Dichloroethanc
 18 Bis(2-chloroethyl)ether
 21 2,4,6-Trlchlorophenol
 22 P-chloro-m-cresol
 23 Chloroform
 24 2-Chlorophenol
 25 1,2-Dichlorobenzene
 26 1,3-Diehlorobenzene
 27 1,4-Dlchlorobenzene
 34 2,4 -Dlmethylphenol
 31 1,2-Diphenylhydrazine
 38 Ethylbenzene
 39 Fluoranthene
 44 ttethylene chloride
 47 Bromoforra
 48 Dlchlorobrotnomethane
 51 Chlorodlbromomethane
 54 Isophorone
 55 naphthalene
 57 2-Nitrophenol
 58 4-Hitrophenol
 62 H-JUtrosodiphenylawine
 64 Pentachlorophenol
 65 Phenol
 66 Bls(2-ethylhe3tyl)
    phthalate
 67 Butyl benzyl phthalate
 68 Di-H-butyl phthalate
 69 Di-H-octyl phthalate
 70 Diethyl phthalate
 85 tetrachloroethylene
 86 Toluene
 87 frichloroethylene
102 Alpha BHC
103 Beta BHC
104 Gauma BHC
121 cyanide*
Total Toxic Organics
                                   <0.01 #
                                   <0.01 •
                                   <0.01 *
                                   <0.01 •
                                                           27.1
                                                            0.013

                                                            0.012
                                                           <0.01
                                                          186.0
                                                            7.4 *•
                                                            7.4 t#
       0.107

       0.101

      <0.006
                                                            1.504
                                                            0.039
       0.250
       0.170

       0.012

       0.017
                                                            0.143
                                                           <0.003
                                                            0.204
                                                           <0.005
                                                          230.472 ť*
 4.08



 0.002

 0.0018

28.0
 2.23
 2.23


 0.016

 0.015
                   0.226
                   0.006
 0.038
 0.026

 0.0018

 0.0026


 0.022

 0.031
                  36.938
                                                                                    <0.01  *

                                                                                     0.043 *
                                  0.046 Ť
                                                                                      <0.01 •
                                                                                       0.030 I
                                                                                       0.019 *
                                                                                      <0.01 tt
<0.01 •

<0.01 •
<0.01 •
<0.01 •
<0.01 *
               <0.005 *
                0.095 •
                                                                                                                0.032 t
                                                                                                                0.013 •
                                                                                                               <0.005 •
                                                           0.045 *
                                                                                                                                         <0.01 ft
                                                   <0.01 8
                                                    0.925 *
                                                    0.052 It
                                                                                                                                         <0.01
                                                                                                                                         <0,005 It
                                                                                     1.02 ť
       * Mot Included  in Total Toxic Organics sunwation.
       f Volatile organics were not analyzed
       • Data not transcribed fro* analytical sheets at proposal.   (See note on page 5-5.)
      M Data incorrectly transcribed at proposal,  (See note on page 5-5.)

-------
                                                                            TABLE 5-6  (Continued)
                                                                        SEMICONDUCTOR PROCESS WftSfES
                                                                                PLANT 04294
cn
 I
ts>
Ul
        Stream Description
        now 
        Duration (hrs)
        Sample ID No.
                              field Hastesf
                                 3650
                      Concentration Mass Load
                         rag/I         rag/day
TOXIC IHORGJWIGS

114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
126 Sliver
121 Thallium
128 21nc

Total Toxic Inorganics

HOH-COMVBITIOHAL POLLUTfiHTS

    Aluminum
    Barium
    Boron
    calcium
    Cobalt
    Gold
    Iron
    Magnesium
    Manganese
    Molybdenum
    Palladium
    Platinum
    Sodium
    Tellurian
    Tin
    Titanium
    Vanadium
    Yttrium
    Phenols
    Total Organic Carbon
    Fluoride
         affluent
           6213
             24
           3652
Concentration  Mass Load
   mg/l          mg/day
                                                            
-------
uť
 I
KJ
en
                                                                        WIBIS 5-6 (Continued)

                                                                     SEMICONDUCTOR PROCESS VXSTBS
                                                                             PLWff 04294


     Streax Description           Acid Vastest               Bffluent         Wafer Finishing Wastes •    Stripper Quench RInset    Photoresist Developerf
     Mow (I/hr)                                               6273
     Duration  (hrs)                                              24                                               Batch                     Batch
     Sample ID No.                   , 3650                     3652                      3641                      3644                      3646
                          Concentration Mass Load  Concentration  Hass Load  Concentration  Mass Load  Concentration  Mass Load  Concentration  Mass Load
                             ťg/l         Kg/day      mg/l          Ng/day      mg/l          leg/day      Rig/i          leg/day      Ťg/l         kg/day

     CONVEKIIOHAL POLLUTAHTS

      Oil & Orease                                        4.0         0.6            7
      Total Suspended Solids                             14           2.11         135
      Biochemical Oxygen Demand                          30           4.52           6.0
      PH


      t Conventional pollutants were not analyzed
      t Data  not transcribed CroŤ  analytical sheets at proposal.  (See note on page 5-5.)

-------
                                                      TABLE 5-7

                                             SEMICONDUCTOR PROCESS WASTES
                                                     PLANT 04296
      Stream Description
      Plow (l/hr)
      Duration (hrs)
      Sample ID Ho.
      TOXIC QRGANICS
                              Supply Hater
                                 1798
                                   24
                                 HI 6-0-0
                      Concentration Mass Load
                         ng/l         Bg/day
                          Effluent
                              1798
                              24
                            H16-1-1
                 Concentration  Mass Load
                    mg/t          rag/day
                                      Scrubber Wastes
                                              10
                                              24
                                            H16-2-1
                                Concentration  Mass Load
                                   mg/l          kg/day
I
NJ
  4 Benzene
  8 1,2,4-TrIchlorobenzene
 23 Chloroform
 24 2-Chlorophenol
 25 1.2-Dlchlorobenzene
 26 1,3-Dichlorobenzene
 27 1,4-Dichlorobenzene
 31 2,4~Dichlorophenol
 37 1.2-Diphenylhydrazlne
 38 Ethylbenzene
 44 Kethylene chloride
 48 Dichlorobromcdethane
 55 Naphthalene
 57 2-Hltrophenol
 65 Phenol
 66 Bis<2-ethylhexylť
    phthalate
 67 Butyl benzyl phthalate
 68 Dl-N-butyl phthalate
 70 Olethyl phthalate
 85 fetrachloroethylene
 86 Toluene
 87 Trlchloroethylene
121 cyanide*
Total Toxic Organics
0.290
0,013
                                                            4,5

                                                            0.09
                                                            4,5
                                                            0.235
                                                            0.235
                                                            0.01
0.190
0.035
3.5

0.05B
                                    0.194

                                    0.0039
                                    0.194
                                    0.01
                                    0.01
                                    0.0004
0.008
0.0015
0.151

0.002
                                    0.011
                                    0.290
           O.OOOS
           0.013
             0.002
            13,335
            0.0001
            0.575
0.70
0.045

0.750
0.013
0.280
0.080
               0.91
               1.868
0.00017
0.00001

0.00018
0.000003
0.00007
0.000019
           0.0002
           0.00045
      TOXIC INORGANICS

      114 Antimony
      115 Arsenic
      117 Beryllium
      118 Cadmium
      119 chromium
      120 Copper
      122 Lead
      123 Mercury
      124 Nickel
      125 Selenium
                             <0.0005
                             <0.005
                             <0.005
                             <0.001
                             <0.025
                              0.04
                              0.24
                             <0.001
                             <0.025
                             <0.005
           0.0017
           0.01
             0.0007
             0.0068
            <0.005
             0.0003
             1.15
             0,005
             0.0035
            <0.001
            <0.025
            <0.005
            0.00003
            0.00029

             0.00001
            0.05
            0.0002
            0.00015
               0.088
               6.25
              <0.005
               0.006
               1.14
               0.38
               0.42
              <0.001
               0.34
              <0.005
           0.00002
           0.0015

           0.000001
           0.00027
           0.00009
           0.0001

           0.00008
       * lot Included In Total Toxic Organics summation.
       B - Present in sample blank

-------
                                                                              TABUS 5-7  (Continued)
                                                                            SEMICOHDUCtOR PROCESS VAST8S
                                                                                   P1MJT 04296
U1
I
f>J
00
                                     sires* Description
                                     Plow {l/hr}
                                     Duration (hrs)
                                     sample ID Ho.
        Supply Water
           1798
             24
           H16-0-0
Concentration Mass Load
   ng/1         mg/day
         Effluenl
             1198
             24
           H16-1-1
Concentration  Mass Load
   mg/t          Kg/day
           Scrubber
              10
              24
            H16-2-1
Concentration  Mass Load
   •g/l          kg/day
                                     TOXIC INORGANICS (Continued)
126 Sliver
127 thallium
128 Zinc
Total Toxic Inorganics
HOH-CONVSNMOHAl, POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
sodium
Tellurium
Tin
Titanium
Vanadium
Xttrlum
Phenols
Total organic carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total suspended
Solids
Biochemical OKygen
Demand
PH

-------
                                                                               •TABU 5-8

                                                                      SBHICOWDUCTOR PROCESS WkSTSS
                                                                              puunr 06143
ui
 i
VD
     Streať Description
     Plow (t /hr)
     Duration (hrs)
     Sample ID Ho.
TOXIC ORGNIICS

  4 Benzen*
  5 Benzldlne
  6 Carbon Tetrachlorlde
  7 ctilorobenzene
  8  ,2,4-friclilorobensrene
 10  ,2-Dlchloroethane
 11  ,1,1-Trlchloroethane
 14  ,1.2-Trlchloroethane
 23 chloroform
 24  -chlorophenol
 25  ,2 Dlchlorobenzene
 26  ,3-Dlchlorobenzene
 27  ,4-Dlchlorobenzent
 29  .1-Dlchloroelhylene
 30  ,2-Transdlchloroethylene
 34 2.4-Dlmethylphenol
 37 1,2-Dlphenylhydrazlne
 38 Ethylbenzene
 39 Fluoranthene
 44 Hethylene chloride
 45 MethjS chloride
 46 Methyl Bromide
 48 Dlchlorobromomethane
 49 Trlchlorofluormethane
 51 chlorodlbromomethane
 55 Naphthalene
 56 Nitrobenzene
 57 2-Hitrophenol
 58 4-Hltrophenol
 65 Phenol
 66 Bls(2 ethylhexyljphthalote
 67 Butyl benzyl phthalate
 68 Dl-H'butyl phthalate
 69 Dl-H-octyl phthalale
 70 Diethy I phthalate
 78 Anthracene
 81 phenathrene
 84 Pyrene
 85 tetracIiloroBthylene
 86 Toluene
 87 Trlchloroethylene
121 Cyanide*
Total Toxic organlcs
                                      Scrubber Wastes
                                          2,509
                                             24
                                           3482
                                Concentration    Mass Load
                                    •g/l           kg/day
                                          <0.oi
                                          <0.0l
                                           0.029

                                          <0.01
                                          <0.01
                                           0.015

                                          <0.01
<0.01
<0.01
<0.01
                                          <0.01
                                          <0.01
                                           0.011
                                           0.76
                                           t.a
                                          
-------
                                                                                 5-B (continued)
                                                                        senicowoocroR PROCESS WASTES
                                                                                PLAHT 06 U3
       Stream Description
       Flow (I /hr)
       Duration Chrs)
       Sample ID No.
       TOXIC INORGANICS
                                      Scrubber Wastes
                                          2,509
                                             24
                                           3482
                                Concentration    Bass Load
                                    iog/1           kg/day
               Dilute Rinses
                  43,214
                      24
                    3483
         Concentration    Mass Load
             Ťg/l           kg/day
                                  Effluent
                                  42,496
                                      24
                                    3484
                         Concentration    Mass Load
                             Ťg/l           fcg/day
                                             Scrubber Hastes
                                                 2,509
                                                    24
                                                  3485
                                       concentration    Hass Load
                                           mg/l           kg/day
Ui
 I
u>
o
 114 Antimony
 115 Arsenic
 117 Beryllium
 118 Cadmium
 119 Chromium
 120 Copper
 122 Lead
 123 Hercury
 124 Nickel
 125 Selenium
 126 Silver
 127 Thallium
-128 Zinc

 fotal Toxic Inorganics

 MON-COHVKHTIOHAL POLLUTANTS

    Aluminum
    Barium
  .. Boron
    Calcium
    Cobalt
    Cold
    Iron
    Magnesium
    Nanganese
    Molybdenum
    Palladium
    Platinum
    Sodium
    Tellurium
    fin
    T Han lure
    Vanadium
    yttrium
    Phenols
    Total organic carbon
    Fluoride
                                             0.002
                                             0.004
                                            <0.001
                                            
-------
                                                                          TABLE 5-8  (Continued)

                                                                      SEMICONDUCTOR PROCESS  HASTBS
                                                                              PLANT 06143
      Stream Description
      Flow (1 /hr)
      Duration (hrs)
      Sample ID No.
      CONVENTIONAL POLLUTANTS

          Oil  & Grease
          Total Suspended  Solids
          Biochemical Oxygen Demand
          pH
      Scrubber Hastes
          2,509
             24
           3482
Concentration    Mass Load
    mg/l           kg/day
      1.57
      0.3
     22
               Dilute Rinses
                  43,214
                      24
                    3483
         Concentration    Mass Load
             mg/t           kg/day
                                 affluent
                                 42.496
                                     24
                                   3484
                        Concentration    Mass Load
                            mg/l           kg/day
0.09
0.018
1.32
3.41
0.3
3.54
0.31
 5.46
 3.3
16.8
                                             Scrubber Hastes
                                                 2.509
                                                    24
                                                  3485
                                       Concentration    Hass Load
                                           mg/l           kg/day
 5.57
 3.37
17.1
12.67
 1.4
12.6
0.76
0.08
0,76
tn

-------
                                                                            TABUS 5-8 (Continued)
                                                                         SEHICOHOOCTOR PROCESS WASTES
                                                                                 PUHT 06143
tn
 I
w
M
        Strea* Description
        Flow (I /hrj
        Duration (hrs)
        SaŤj>le ID No.
                                       Dilute Rinses
                                          43,214
                                             24
                                           3486
                                concentration    Mass Load
                                    *g/l           kg/day
tOXIC ORGftHICS

  4 Benzene
  5 Benzldlne                        <0,01 I
  6 Carbon Tetrachlorlde
  7 chlorobenzene
  8 1,2,4-Trlchlorobenzene
 10 l,2-DlchloroethanŤ
 11 1,1,1-Trlchloroethane             0.014          0.145
 14 1.1,2-Trlchloroethane            <0ť0i
 23 chloroform                       <0.01
 24 2-Chlorophenol
 25 1,2-Dlchlorobenzen*              <0.01
 26 1,3-Dlchlorobenzene
 27 1,4-Dlchlorobenzene
 29 1,1-Dlchloroethylene
 30 1,2-Transdlchloroethylene
 34 2,4-Dinethyiphenol
 37 1,2-Dlphenylhydrazlne
 38-Bthylbenzene                     <0.0i
 39 Pluoranthene
 44 Hethylene chloride               <0.0i
 45 Methyl Chloride
 46 Methyl Bromide
 48 Dlchlorobromofliethane
 49 Trlchlorofluormethane
 51 Chlorodibroraomethane
 55 Naphthalene
 56 Nitrobenzene
 57 2-Hltrophenol
 58 4-Nltrophenol
 65 Phenol                            0.31           0.32
 66 Bls(2-ethylhexyl)phthalate       <0.01
 67 Butyl benzyl phthalate           <0.01
 68 Dl-N-butyl phthalate             <0.01
 70 Dlethyl  phthalate
 78 Anthracene
 81 Phenathrene
 84 Pyrene
.-85 TetrachloroŤthylene              <0.01
 86 toluene                          <0.01
 87 Trlchloroethylene
 121 cyanide*                         0.01           0.01
 total Toxic  Organlcs                  0.324  It       0.336
          Effluent
          47.701
             24
           3487
Concentration    Kass Load
    Ťg/t           kg/day
                                                                           <0.01 •

                                                                           <0.01
                                                                           <0.01
                                                                           <0.01
                                                                            3.2            3.66
                                                                            0.270 •
                                                                           <0.0l
                                                                            0.044
                                                                             0.02
     <0.01

     <0.01B


     <0.01
                                                                            0.011

                                                                            0.61
                                                                           <0.0l

                                                                           <0.01
                                                                           <0.01
                                                                           <0.01B

                                                                            0.01
                                                                            4.155 II
                     0.309

                     0.05
                     0.023
                     0.01

                     0.70
                     0.01
                     4.757
          *  Not  Included  In  Total  Toxic Organlcs  summation.
          B  =  Present  In  sample  blank
          •  Data not transcribed from  analytical  sheets at proposal,   {see note on page 5-5.)
         •I  Data Incorrectly transcribed  at  proposal.  (See note on page 5-5.)
       Scrubber Wastes
           2,509
             24
           3488
Concentration    Kass Load
    ťg/l           kg/day
                                   <0.01 I
                                    0.025
      0.011
      0.033
     <0.01
      0.018B
     <0.01
      0.018 •

     <0.01

      0.013
     <0.01
     <0.01
      0.015° W

     <0.01B
                                                                                                          0.016
     <0.01
      0.13
      0.97
     <0.01
     <0.01
     <0.0l
     <0.01
      0.074
      0.0128
      0.08B
      0.01
      1.415 t*
                 Dilute Rinses
                   43,214
                       24
                     3489
          Concentration    Mass Load
              •g/i
                                   <0.01
 0.002


 0.0007
 0.002

 0.001

 0.001



 0.0008


<0.01





 0.0010
 o.ooa
 0.058
 0.0045
<0.01
 0.0048
 0.001
 0.0852
                                                                                                                                        0.019
                                                                                                                                       <0.01 •
                                                                                                                                       <0.01
                                                                                 0.020
<0.01

<0.01
 0.011
<0.01

<0.01
<0.01

 0.01
 0.03
                0.01
0.01
0.031

-------
                                                                          TABLE 5-8  (Continued)

                                                                       SEMICONDUCTOR PROCESS WASTES
                                                                              PLANT 06143
      Stream Description
      Flow (I /hr)
      Duration (hrs)
      Sample ID No.
                                       Dilute Rinses
                                         43.214
                                             24
                                           3486
                                Concentration    Mass Load
                                    rag/I           leg/day
                   Effluent
                  47.701
                      24
                    3487
         Concentration    Mass Load
             mg/t           kg/day
                                 Scrubber Wastes
                                    2,509
                                       24
                                     3488
                          Concentration    Mass Load
                              rag/I           kg/day
                                                Dilute Rinses
                                                  43,214
                                                      24
                                                    3489
                                         Concentration    Mass Load
                                             mg/l           kg/day
Ui
I
oo
oo
TOXIC INORGANICS

114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
126 Sliver
127 Thallium
128 Zinc

Total Toxic Inorganics

HON-CONVBNTIONAL POLLUTANTS

    Aluminum
    Barium
    Boron
    Calcium
    Cobalt
    Gold
    Iron
    Magnesium
    Manganese
    Molybdenum
    Palladium
    Platinum
    Sodium
    Tellurium
    Tin
    Titanium
    Vanadium
    Yttrium
    Phenols
    Total Organic Carbon
    Fluoride
                                            0.002
                                           <0.001
                                           <0.001
                                           <0.002
                                            0.310
                                            0.046
                                           <0.039
                                           <0.001
                                            0.135
                                            0.003
                                           <0.001
                                            0.001
                                            1.84

                                            2.337
                                            0.041
                                            0.001
                                            0.058
                                            0.546
                                           <0.048
                                           <0.001
                                            1.23
                                            0.147
                                            0.024
                                           <0.034
                                           <0.003
                                           <0.01
                                           <1.5
                                            0.005
                                           <0.024
                                           <0.002
                                           <0.001
                                           <0.003
                                            0.036
                                            5.3
                                            1.1
                                                           0.0021
0.322
0.048
0.14
0.003

0.001
1.91

2.426
0.043
0 001
0.06
1.28

0.025




0.005
0.037
5.5
1.14
 <0.001
  0.003
 <0.001
 <0.002
 <0.001
  0.904
 <0.039
 <0.001
 <0.005
  0.007
  0.001
 <0.001
  0.05

  0.965
  0.572
  0.007
  0.908
  7.0
 <0.049
  0.002
 <0.001
  2.11
  0.029
 <0.034
 <0.003
 <0.01
344
 <0.002
 <0.025
  0.012
 <0.001
 <0.003
  0.040
 49.8
125
  0.003



  1.03



  0.008
  0.001

  0.057

  1.099
  0.655
  0.008
  1.04
                              0.0023
  0.045
                              0.014
  0.046
 57.0
143.1
 0.002
 0.001
<0.001
<0.002
<0.001
 0.005
<0.039
<0.001
<0.005
 0.001
<0.001
<0.001
<0.001

 0.009
 0.148
 0.013
 0.009
18.2
<0.049
<0.001
<0.001
 5.14
 0.031
<0.034
<0.003
<0.01
13.5
<0.002
<0.024
<0.002
<0.001
<0.003
 4.4
18.81
27.5
                                                            0.0001
                                                            0.00006
0.0003
0.00006
0.0005
0.0089
0.0008
0.0005
                                0.002
                                0.005
0.26
1.13
1.66
 0.001
 0.002
<0.001
<0.002
<0.001
<0.002
<0.039
<0.001
<0.005
<0.001
 0.001
<0.001
<0.001

 0.004
                                                              0.001
                                                              0.0021
                              0.001
                              0.0041
0.024
<0.001
0.022
0.032
<0.048
<0.001
<0.001
<0.024
<0.001
<0.034
<0.003
<0.01
0.0052
<0.024
0.002
0.001
0.003
0.019
5.3
1.5
0.02!

0.02:














0.19
5.5
1.56

-------
                                                                    TABLS 5-8 (Continued)

                                                                 SBHICOWXJCTOR PROCESS WASTES
                                                                         PUWt 06143
streaa Description
Plow (I /hr)
Duration (hrs)
Sample ID HO.
CONVBHTIOHM. POLLUf MťTS

    Oil & Crease
    Total Suspended solids
    Biochemical Oxygen Demand
    PH
       Dilute Rinses
         43,214
             24
           3486
Concentration    Hass Load
    Ťg/l           kg/day
          Effluent
         47,701
             24
           3487
Concentration    Mass Load
    mg/l           kg/day
                                      1.6
                                     22
                     T.66
                    22.8
     11.67
      3.0
      1.2
13.4
 3.43
 1.47
                 Scrubber  Wastes
                    2,509
                       24
                     3488
          Concentration
 0.24
 1.6
30
                                                                                                             Mass Load
                                                                                                               kg/day
0.01
0.096
1.81
                                Dilute Rinses
                                  43,214
                                      24
                                    3489
                         Concentration    Kass Load
                             mg/l           kg/day
                                                                                                                                0.8
                                                                                                                                               0.83

-------
                                     WBLB 5-8 (Continued)
Ul
 I
u>
Ul
        Strew Description
        Flow (t /hr>
        Duration (hrs)
        Saaple ID No.
        TOXIC 08GMUCS
                          SBMICONDUCT08 PROCESS WASTES
                                  PLANT 06143

                                         Effluent
                                          46,002
                                             24
                                           3490
                                Concentration    Mass Load
                                    ag/t           kg/day
 4 Benzene
 5 Benzidlne
 6 Carbon Tetrachloride
 7 chlorobenzene
 8 1,2,4-f r ichlorobenzene
10 1,2-Dlchloroethane
11 1,1,1-Trichloroethan*
14 1,1,2-Trichloroethane
23 Chloroform
24 2-Chlorophenol
25 1,2-Dichlorobenzene
   1,3-Dichlorobenzem
   1,4-Bichlorobenzene
   1.1-Dlchloroettiylene
   1,2-Transdichloroethylene
26
27
29
30
34
37
    2.4-Dlaethylphenol
     ,2-Diphenylhydrazine
 38 Bthylbenzene
 39 Fluoranthene
 44 Methylene chloride
 45 Methyl Chloride
 46 Methyl Bronide
 48 Dichlorobromomethane
 49 Trichlorofluormethane
 51 chlorodibromomethane
 55 Naphthalene
 56 Nitrobenzene
 57 2-Nitrophenol
 58 4-Nltrophenol
 65 Phenol
 66 Bls(2-ethylhexyl)phthalate
 67 Butyl benzyl phthalate
 68 Di-H-butyl phthalate
 70 Dtethyl phthalate
 78 anthracene
 81 Phenathrene
 85 Tetrachloroethylene
 86 Toluene
 87 Trichloroethylene
121 cyanide*
Total Toxic Organics
                                             <0.01B
                                             <0.01
                                             <0.01

                                              7.7

                                             <0.01
                                             <0.01
                                              0.091
                                             <0.01
                                              0.015
                                              0,071
                                             <0.01B

                                             <0.01B
                                             <0.01

                                             <0.01
                                              0.043
                                              0.31
                                             <0.01
                                             <0.01
                                             <0.01
                                             <0.01B

                                              0,01
                                              8.23
                                                     8.5
                                                     0.10

                                                     0.017
                                                     0.08
                                                    0.047
                                                    0.34
                                                    0.01
                                                    9.084
        * Not Included in Total Toxic Organics summation.
        B - Present In sample blank

-------
                                                                      TABU5 5-8 (Continued)

                                                                   SUmCONWCTOR PROCBSS WASTES
                                                                           PLAKT 06143
 I
uť
a\
                                         Stream Description
                                         Plow U /hr)
                                         Duration (hrs)
                                         Simple ID Mo.
TOXIC IN08QWUCS

1M Antimony
115 Arsenic
117 Beryl HIM
118 Cadmlura
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 selenium
126 Silver
127 Thallium
128 Zinc

Total Toxic inorganics

               f. POLLUTRNTS
                                          Effluent
                                         46,002
                                             24
                                           3490
                                Concentration    Mass Load
                                    tug/1           kg/day
                                             Aluminum
                                             Barium
                                             Boron
                                             Calcium
                                             Cobalt
                                             Gold
                                             Iron
                                             Magnesium
                                             Manganese
                                             Molybdenum
                                             Palladium
                                             Platinum
                                             Sodium
                                             Tellurium
                                             Tin
                                             Titanium
                                             Vanadium
                                             Yttrium
                                             Phenols
                                             Total Organic carbon
                                             Fluoride
                                                                              <0.001
                                                                               0.01
                                                                              
-------
                                                                             TftBLB 5-8 (Continued)

                                                                          SEMICONDUCTOR PROCESS HASTES
                                                                                  PUWT 06143
                                                Stream Description                        Effluent
                                                Flow (I /hr)                             46.002
                                                Dura Lion (hrs)                               24
                                                sample ID Ho.                              3490
                                                                                .concentration    Mass Load
                                                                                    mg/l           kg/day

                                                CONVBHTIOHAL POLLOTRNfS

                                                    Oil & Grease                      2.44           2.69
                                                    Total Suspended Solids            3.8            4.20
                                                    Biochemical Oxygen Demand        24.4           26.9
Ul
 I
U!

-------
                                                                              TABLE 5-9

                                                                     SEMICONDUCTOR PROCESS VKSTSS
                                                                             PLAHf 30167
Ul
 I
U)
00
     StreoM Description
     Plow (I /hr)
     Duration (hrs)
     Sample 10 Ho.
     TOXIC OSOHHCS
                                        Supply water
                                          205020
                                            24
                                           IH9-0
                               Concentration    Kane Load
                                   •g/l           kg/day
           Acid wastes
             24529
             24
             M19-2
concentration    KBBS Load
    mg/t,           kg/day
  4  Benzene
  7  Chlorobenzene
  8  1,2,4-frlchlorobenzene
 U  1,1,1-frlchloroethane
 13  1.1-Dlchloroethane
 23  Chloroform
 24  2-Chlorophenol
 25  1,2-Dichlorobenzene
 44  Hethylene chloride
 51  Chlorodlbromonethane
 55  Naphthalene
 57  2-Kitrophenol
 58  4-Hitrophenol
 65  Phenol
 66  Bis(2-ethylhexyl)phthalate        0.01           0.05
 67  Butyl benzyl phthalate
 68  Di-H-butyl phthalate
 69  Di-H-octyl phthalate
 70  Dlethyl  phthalate
 85  Tetrachloroethylene               0.03           0.15
 86  Toluene
 87  Trlchloroethylene                 0.009          0.04
121  Cyanide*                          0.002          0.01

Total Toxic  organics                  0.030 ť        0.24

TOXIC INORGANICS

114  Antimony                         <0.001
115  Rrsenlc                           <0.01
117  Beryllium                        <0.01
118 cadmium                          <0.001
119 chromium                         <0.005
120 copper "                          <0.0l
122 Lead                             <0.001
123 Mercury                          <0.001
124 Hickel                           <0.025
125 Selenium                         <0.005

*Hot included in Total Toxic Organlcs summation,
HData not transcribed  from analytical sheets at proposal.
B = present in sample  blank
      0.01


      0.147



      0.018




      0.007


      0.35

      0.165 •
              Treated Acid Wastes
                      24529
                       24
                      H19-3
         Concentration    Rass Load
             mg/l           kg/day
                             Influent to Treatment
                                    205043
                                      24
                                     W9-4
                        Concentration    Kass Load
                            mg/l           kg/day
0.006


0.087



0.011




0.004


0.206

0.097
0.013

0.006


0.005

0.140



0.034




0,085


0,110

0.272 •
<0,002
<0.01
<0.0l
0.004
22.8
2.2
5.35
<0.001
0.69
<0.005



0.002
13.42
1.295
3.15

0.406

<0.001
<0.01
<0.01
<0.001
0.055
0.145
0.005
•cO.OOl
0.065
<0.005
0.008

0.004


0.003

0.082



0.020




0.050


0.065

0.160
                                                                                                                      0.032
                                                                                                                      0.085
                                                                                                                      0.003

                                                                                                                      0.038
                                                                                                                                     0.011
0.5368
                                                                                                                                     0.01

                                                                                                                                     0.290
                                                                                                                                     0.01
                                                                                                                                     0,0365
                                                                                                                                    <0.001

                                                                                                                                     0.874 t
                                                                   0.001
                                                                  <0.01
                                                                  <0.01
                                                                  <0.001
                                                                   0.025
                                                                   0.035
                                                                   0.008
                                                                  •cO.OOl
                                                                   0.035
                                                                  <0.005
                                                                                                                                                    0,054
2.638
               0.049

               1.427
               0,049
               0,180
               4,301
                                                                                                                                                    0.005
                                                            0.123
                                                            0.172
                                                            0.039

                                                            O.H2
                                                                 (Sec note on pace 5-5.)

-------
                                                                        TABLE 5-9 (continued)

                                                                     SEMICONDUCTOR PROCESS WASTES
                                                                             PLANT 30167
    Stream Description
    Flow  (I /hr)
    Duration  (hrs)
    Sample ID No.
    TOXIC INORGANICS (Continued)
                                     supply Hater
                                       205020
                                         24
                                        H19-O
                            Concentration    Hass Load
                                rag/I           kg/day
                                    Acid wastes
                                      24529
                                      24
                                      HI 9 2
                         Concentration    Mass Load
                             ing/l           kg/day
                               Treated Reid Hastes
                                       24529
                                        24
                                       M19 3
                          Concentration    Mass Load
                              rag/t           kg/day
                                              Influent to Treatment
                                                     205043
                                                       24
                                                      H19 4
                                         Concentration    Mass Load
                                             mg/t           kg/day
     126 Silver
     127 Thallium
     128 Zinc

     Total Toxic Inorganics

     NON CONVENTIONAL POLLUTANTS
                                 <0.0l
                                  0.001
                                 <0,01

                                  0.001
                0.005
                0.541
  0.025
  0.005
 <0.01

 31.07
  0.014
  0.0029
                                                                              18.29
 <0.01
  0.012
 <0.01

  0.282
                                                                            0.007
                                                                                                             0.166
                <0.01
                 0.012
                <0.01

                 0,116
                                                                                                          0.059
                                                                                                                                           0.571
cn
 I
U)
Aluminum
Barium
Boron
Calcium
cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
tttrlum
Phenols
Total organic Carbon
Fluoride
  NA
  NA
  NA
  NA
  NA
  NA
  MA
  NA
  NA
  NA
  NA
  NA
  HA
  NA
  NA
  NA
  NA
  NA
<0.002
56
 4.2
                                                       275.5
                                                        20.67
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
  0.004
414
760
  0.002
243.7
447.4
   NA
   MA
   HA
   NA
   NA
   NA
   NA
   HA
   NA
   NA
   NA
   HA
   NA
   HA
   NA
   NA
   NA
   NA
  0.004
255
 37
  0.0024
150.1
  7.418
  NA
  NA
  HA
  NA
  NA
  NA
  NA
  NA
  NA
  NA
  NA
  NA
  NA
  NA
  NA
  NA
  NA
  NA
<0.002
47
              231.3
    CONVENTIONAL POLLUTANTS
        Oil & Grease                      2.0
        Total Suspended Solids            1.2
        Biochemical oxygen Demand         3
        pH                                7.8

    NA=Non-toxic wetals not analyzed
                                                 9.84
                                                 5.9
                                                14.8

                                                  O
                               2.8
                               5.6
                              <3
                               1.2
                 1.648
                 3.297
                 3.1
                71
               550
                11.9
                 1.825
             41,80
               323.8
                 1.0
               203
                11
                 9.4
                4.921
              999.0
               54,13

-------
    Stream Description
    Flow 
-------
                                                                           TABLE 5-9  (Continued)

                                                                        SEMICONDUCTOR PROCESS WASTES
                                                                                PLANT 30167
        Strea/i Description
        Flow It /hr>
        Duration (hrs)
        Sample ID Mo,
        TOXIC INORGANICS  (Continued)
                                       Effluent
                                       205043
                                         24
                                        M19-5
                            Concentration    Hass Load
                                mg/l           kg/day
                             Wafer Finishing Wastes
                                    3950
                                      24
                                      H19-1
                         Concentration    Hass Load
                             rag/I           kg/day
                                Equipment Cleaning
                                      1577
                                        24
                                       H19-6
                          Concentration    Hass Load
                              mg/l           kg/day
                                  Display Panel
                               Production Effluent
                                      5520
                                        24
                                       M19-7
                          Concentration    Hass Load
                              mg/l           kg/day
        126 Silver
        127 Thallium
        128 Zinc
                                 <0.01
                                  0.003
                                 <0.01
                0.01
 <0.010 f
 <0.001 •
 <0,0l S
 <0.010 •
  0.002 t
  0.173 ft
                                                                            0.00008
                                                                            0.007
               <0.010 8
               <0.001 i
                0.013 *
        Total  Toxic  Inorganics

        NON-CONVENIIONRL POLLUTANTS
                                  0.093
                                                 0.46
                                                                0.020 I
                                                                               0.002
                                                                                             19.009 t
                                                                                                             0,719
                                                                                                                            0.197  t
.n
I
aluminum
Barium
Boron
Calcium
Cobalt
Sold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
fin
Titanium
Vanadium
yttrium
Phenols
Total Organic Carbon
Fluoride
  NA
  NA
  NA
  NA
  NA
  NA
  NA
  NA
  NA
  HA
  NA
  NA
  NA
  NA
  NA
  m
  NA
  NA
 0.008
97 *
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
   NA
 <0.002
132 *
                                                                                         12.5
   NA
   HA
   NA
   NA
   NA
   NA
   NA
   HA
   NA
   NA
   NA
   NA
   HA
   NA
   NA
   NA
   NA
   NA
  0.006
107 tt
 60 •
 0.0002
40.8
 2.27
  NA
  HA
  Nft
  NA
  NA
  NA
  NA
  NA
  MA
  NA
  NA
  NA
  NA
  HA
  NA
  NA
  NA
  NA
<0.002
68 *
       CONVENTIONAL POLLUTANTS

           Oil & Grease                     17.4
           Total Suspended Solids          350
           Biochemical oxygen Demand        70
           pH                                8.8
                                                85.62
                                              1722.2
                                               344.4
                               6.0 8
                             325 8
                              56 t
                               8.2 t
                 0.57
                30.8
                 5.31
  2.8 8
  0.6 8
 <3 S
  1.0 *
 0.106
 0.023
 2.1 8
 3 8

 8.1 t
        * Data not transcribed from analytical sheets at proposal.
       NA = Not analyzed.
                                                         (See note on page 5-5.)

-------
                                                                    TABLE 5-9 (Continued)

                                                                 SIHICONBUCTOR PROCESS VASTSS
                                                                         PLAWT 30167
Strea* Description
Flow (I /hr)
Duration (hrs)
Sample ID No.
       TOXIC ORGAHICS

         4 Benzene
         7 Chlorobenzene
         8 1,2,4-Trlchlorobenzene
        11 1,1,1-Trlehloroethane
        13 1.1-Dlchloroethane
        23 chloroform
        24 2-Chlorophenol
        44 Methylene chloride
        51 chlorodlbromoaethane
        55 Naphthalene
        57 2-Mltrophenol
        58 4-NKrophenol
        65 Phenol
ui      66 Bls(2-ethylhexyl)phthalate
I       67 Butyl benzyl phthalate
*"      68 Dl-N-butyl phthalate
w      69 Dl-N-octyl phthalate
        70 Dlethyl phthalate
        85 Tetrachloroethylene
        86 Toluene
        87 Trlchloroethylene
       121 cyanide*

       Total Toxic Organics

       TOXIC INORGANICS

       114 flntlmony
       115 ftrsenlc
       117 Beryllium
       118 Cadmium
       119 Chromium
       120 Copper
       122 Lead
       123 Hercury
       124 Nickel
       125 Selenium
          Effluent
           189250
             24
            3314
Concentration    Mass Load
    Ťg/l           kg/day
                                     <0,0l
                                      0.016
                                      0.013

                                      0.006
                                     <0.04

                                      0.029 **
                                     <0.003
                                      0.014
                                      0.002
                                      0.015
                                      0.115
                                      0.158
                                      0.040
                                     <0.003
                                      0.108
                                     <0.003
                     0.073
                     0.059
                    <0.01
                     0.027
                                                     0.159
                     0.064
                     0.009
                     0.068
                     0.522
                     0.718
                     0.182

                     0.491
   Influent to TreatMtnt
           189250
             24
            3315
Concentration    Mass Load
    mg/l           kg/day
      0.001
      0.012

      0.005
     <0.04

      0.012 **
     <0.003
      0.010
      0.002
      0.018
      0.027
      0.045
     <0.010
      0.003
      0.054
     <0.003
0.005
0.055

0.023


0.083
                    Acid Wastes
                     20187
                       24
                      3316
         Concentration    Mass toad
             mg/t           kg/day
                               Treated Acid Wastes
                                     20187
                                       24
                                      3317
                         Concentration    Mass Load
                             mg/l           kg/day
 0.016
                                                                                                   0.001
 0.047

 0.002
<0.04

 0.063 It

0.045
0.009
0.082
0.123
0.204

0.014
0.245

<0.003
0.004
0.002
0.030
19.00
1.742
3.675
0.002
1.956
<0.003
                                                                                                                 0.008
0.023

0.001


0.032
                              0,002
                              0.001
                              0.015
                              9.205
                              0.844
                              1.780
                              0.001
                              0.948
               0.006
 0.042

 0.001
<0.04

 0.042 til
                              <0.003
                              <0.003
                              <0.001
                              <0.00l
                               0.128
                               0.050
                               0.18
                               0.001
                               0.121
                              <0.003
                                                                                                                                               0.003
0.020

0.001


0.024
                               0.062
                              0.024
                              0.00<ť
                              0.001
                              0.059
 •Hot Included In Total toxic Organics suiwwtlon.
MData incorrectly transcribed at proposal.  (See note on page 5-5.)

-------
                                                                         TABLE 5-9 (Continued)

                                                                      SEMICONDUCTOR PROCESS HASTES
                                                                              PLANT 30161
Ul
 I
     Stream Description
     Plow (I /hr)
     Duration (hrs)
     Sample ID Mo.
TOXIC INORGANICS (Continued)

126 sliver
127 Thallium
128 Zinc

Total Toxic Inorganics

NON-CONVENTIONAL POLLUTANTS

    Aluminum
    Barium
    Boron
    Calcium
    Cobalt
    Gold
    Iron
    Magnesium
    Manganese
    Molybdenum
    Palladium
    Platinum
    Sodium
    Tellurium
    Tin
    Titanium
    Vanadium
    Yttrium
    Phenols
    Total Organic carbon
    Fluoride
                                          Effluent
                                           189250
                                             24
                                            3314
                                Concentration    Mass Load
                                    mg/t           kg/day
                                           0.025
                                           0.120
                                           0.358

                                           0.955
  1.352
  0.089
  0.353
618.62
  0.050

  7.571
 55.39
  0.217
  0.065
                                         488.93

                                           0.121
                                          <0.030
                                           0.385
                                           0.064
                                          <0.004
                                          70.0
                                           1.5
                 0.114
                 0.545
                 1.626

                 4.334
  0.550

  1.75
  0.291

317.94
  6.813
                             Influent to Treatment
                                     189250
                                       24
                                      3315
                          Concentration    Mass Load
                              mg/t           kg/day
                 0.015
                 0.05
                 0.162

                 0.386
6.141
0.404
1.603

0.227
34.387

0.986
0.295
0.986
0.053
0.306
313.02
0.042
5.404
46.810
0.059
0.052
504.23

  0.106
 <0.03
  0.339
  0.056
 <0.004
 90.0
  1.9
                 0.068
                 0.227
                 0.736

                 1.753
                                                    Acid Wastes
                                                     20187
                                                       24
                                                      3316
                                         concentration    Mass Load
                                             mg/t           kg/day
  0.011
  0.40
  0.197

 26.659
                                                                                                    1400.0
  0.005
  0.019
  0.095

 12.916
                                                              Treated Acid Wastes
                                                                    20187
                                                                      24
                                                                     3317
                                                        Concentration    Mass Load
                                                            mg/t           kg/day
  0.020
  0.19
  0.033

 13.039
4.478
0.241
1.390

0.191
24.545

0.268
0.236
4.440
0.018
12.145
4.155
0.041
1.025
3.325
22.37
0.198
2.151
0.009
5.884

0.202
0.50

10.840
0.10
<0.001
<0.001
0.571
1090,0
<0.001
0.071
0.783
0.133
0.158
                                                                                                                                   231.73
0.481

1.540
0.254

408.78
8.63
0.270
<0.03
0.134
0.069
< 0.004
400.0
306.0
0.131

0.065
0.033

193.80
148.25
<0.00l
0.024
<0.001
0.005
<0.004
250.0
9.5
 <0.01
  0.092
  0.016

  6.317
                                                                                                                                                    0.277
                                                                                            0.034

                                                                                            0.064
                                                                                            0.017
                                                                                                           0.012

                                                                                                           0.002

                                                                                                         121.12
                                                                                                           4.603
     CONVENTIONAL POLLUTANTS

         Oil & Grease
         Total Suspended solids
         Biochemical Oxygen Demand
         PH
                                      1.3
                                     12.27
                                     91.8
                 5.91
              5573.03
               477.41
                 1.2
               145.0
               116.0
                 5.450
               658.59
               526.87
  1.3
  2.0
704.0
  0.630
  0.970
341.10
  0.3
 66.2
452.0
 32.073
219.0

-------
                                                                           TML8 5-9 (Continued)

                                                                        SQUCOHDUCTOR PROCESS WST8S
                                                                                PtWIT 30167
        Streaji Description                Wafer Finishing Wastes
        Plow (I /hr)                               2059
        Duration (hrs)                               24
        Sample ID Ho.                               3318
                                        Concentration    Mass 'Load
                                            Mg/l           kg/day

        TOXIC OROANICS

          4 Beiuene
          7 Chlorobenzene
          8 1,2,4-Trichloroberaene
         11 1,1,1-Triehloroethane
         13 1,l-Dichloroethane
         23 Chloroforn
         24 2-Chlorophenol
         44 Methylene chloride                0.009         <0.001
         51 Chlorodlbrofflomethane
         55 Naphthalene
         51 2-Hitrophenol
         58 4-Hltrophenol
jj,       65 Phenol
I        66 Bls(2-ethylhexyl)phthalate
*•       67 Butyl benzyl phthalate
*•       68 Di-M-butyl phthalate
         69 Dl-H-octyl phthalate
         70 Dlethyl phthalate
         85 Tetrachloroethylene               0,002         <0.001
         86 Toluene
         87 frichloroethylene                 0.018          0.001
        121 Cyanide*                         <0.004

        total Toxic Organlcs                  0.018 M       0.001

        TOXIC INORGANICS

        114 Rntimony                         <0.003
        115 Rrsenlc                          <0.003
        117 Beryllium                        <0.001
        118 Cadmium                          <0.001
        119 Chromium                         <0.020
        120 Copper                            0.092          0.005
        122 Lead                              0.015         <0.001
        123 Mercury                           0.002         <0.001
        124 Mlckel                           <0.028
        125 Selenium                         <0.003

         *Not Included  In Total Toxic Organlcs summation.
        HtData Incorrectly transcribed at proposal.  (See note on page 5-5.)

-------
                                                                         TABLE 5-9 (Continued)

                                                                      SEMICONDUCTOR PROCESS WASTES
                                                                              PLANT 30167
 I
*ť
U1
     Stream Description
     Plow (I /hr)
     Duration  (hrs)
     sample ID Ho.
TOXIC INORGANICS (Continued)

126 Silver
127 Thallium
128 Zinc

Total toxic Inorganics

NOH-CONVEHTIONAL POLLUTANTS

    Aluminum
    Barium
    Boron
    calcium
    Cobalt
    Gold
    Iron
    Magnesium
    Manganese
    Molybdenum
    Palladium
    Platinum
    Sodium
    Tellurium
    Tin
    Titanium
    Vanadium
    yttrium
    Phenols
    Total Organic Carbon
    Fluoride

CONVENTIONAL POLLUTANTS

    Oil & Grease
    Total Suspended Solids
    Biochemical Oxygen Demand
    pH
                                  Wafer Finishing Wastes
                                           2059
                                             24
                                            3318
                                Concentration    Mass Load
                                    mg/i           kg/day
                                          <0.002
                                          <0.020
                                           0.047
<0.001
<0.001
 1.194
 8.156
<0.00!

<0.001
 6.457
<0.001
<0.025
                                          148.224

                                           0.037
                                          <0.03
                                          <0.001
                                          <0.00i
                                           0.11
                                          70.0
                                          <0.10
                                           14.1
                                         344.0
                                           69.0
                                                          0.002

                                                          0.008
                                                          0.059
                0.002
                0.001
                3.46
                0.697
               17.0
                3.41

-------
                                                                              tuus-ie
                                                                     simccHDUCKMt rtoctss warn
                                                                             nun 35035
     Birean Description
     Mow tl /hr)
     Duration (brŤ)
     Sample ID HO.
     TOXIC OROJVNICS
       scrubber VuUŤ
             50
             24
            3718
Concentration    Htss Load
    •g/1           kf/day
        Dilute Itnti*
          6Ť6S
             2Ť
            3119
Concentration    KM* toad
    •9/t           kg/day
           affluent
             417i
              24
             3720
Concentration    Has* Load
    •4/1           kg/day
                                                                                                                               Dliutt Rtn*es
                                                                                                                                    9169
                                                                                                                                     24
                                                                                                                                    3121
                                                                                                                        Concentration    Bass Load
                                                                                                                            •9/1           kg/day
U1
I
*ť
0.090 •
<0.01
<0.01
<0.0l" •
0.097
3.10
9.1*
<0.01*

-------
                                                                          TABLE 5-10 (Continued)

                                                                       SEMICONDUCTOR PROCESS WASTES
                                                                               PLANT 3S035
Ul
I
      Stream Description
      Flow  (I /hr)
      Duration  (hrs)
      Sample ID Ho.
TOXIC INORGANICS (Continued)

126 Silver
127 Thai lima
128 Zinc

total Toxic Inorganics

NQH-COHVBNflOHM, POLLOTMI1S

  Aluminum
  Barium
  Boron
  Calcium
  Cobalt
  Gold
  Iron
  Magnesium
  Manganese
  Molybdenum
  Palladium
  Platinum
  Sodium
  Tellurium
  lln
  Titanium
  Vanadium
  Yttrium
  Lithium
  Phenols
  Total Organic Carbon
  Fluoride

CONVENTIONAL POLLUTANTS

  Oil & Grease
  Total Suspended Solids
  Biochemical Oxygen Demand
  pH
                                       Scrubber Wastes
                                             50
                                             24
                                            3718
                                Concentration    Mass Load
                                    og/l           kg/day
                                           <0.001
                                           <0.001
                                           <0.001
                                            0.019
  0.253
 <0.001
  0.372
  5.80
 <0.05
 <0.002
 <0.001
  8.33
  0.033
 <0.035
 <0.003
 <0.003
 27.20
  0.01
 <0.025
  0.004
  0.013
 <0.003
   0.006
135.0
177.0
119
                                            5.0
                                           24.8
                                          471
                                  Dilute Rinses
                                     6865
                                      24
                                     3719
                          Concentration    Mass  Load
                              ťg/t           leg/day
                               <0.001
                               <0.001
                               
-------
                                                                         IABU5 5-10  {Continued)

                                                                       SEMICONDUCTOR  PROCESS mSI2S
                                                                               PLANT  35035
      Stream Ascription
      Plow (I /hr)
      Duration (hrs)
      Sample ID No.
      TOXIC ORGANICS
                                         Effluent
                                             8740
                                             24
                                            3722
                               Concentration   Mass Load
                                   ttg/l           kg/day
                 Dilute Rinses
                      7904
                      24
                      3723
         Concentration   Mass  Load
             mg/l           kg/day
                                    Effluent
                                      7681
                                      24
                                      3724
                        concentration    Mass  Load
                            mg/l           kg/day
I
*>.
CO
  4 Benzene
  8 1,2,4-frichlorobenzene            5,200          1.091
 11 1,1,1-frichloroethane
 13 1,1-Dichloroethane
 23 Chloroform
 24 2-chlorophenol
 25 1,2-Dlehlorobenzene
 26 It3-Dlchlorobenzene
 27 1,4-Dlchlorobenzene
 38 Ethylbenzene
 44 Kethylene chloride
 55 Naphthalene
 57 2-Nitrophenol
 58 4-Nitrophenol
 65 Phenol
 66 Bis(2-ethylhexyl}phthalate
 68 Di-N-butyl phthalate
 70 Dlethyl phthalate
 85 fetrachloroethylene
 86 toluene
 81 Trlchloroethylene
121 Cyanide*

Total Toxic Organics                  5.593 ft       1.113
                                                                          0.0096
                                                                          0.0009
                              0.0018
                              0.0002
                                                                                                        5.300
                                                                                                                       0.977
0.0055
0.0015
0.0021


0.0075
0.086
0.018
0.263
0.013
0.0022
0.0002
0.013
0.0081
<0.005
0.0012
0.0003
0.0006


0.0016
0.018
0.0038
0.055
0.003
0.0005
0.00004
0.003
0.0018

0.0054



0.0002
0.013
0.046

0.0011
0.003
0.0009
0,0003
0.0072
0.0049
<0.005
0.001



0.00004
0.0025
0.0087

0.0002
0.00057
0.0002
0.00006
0.0014
0.00093

0.0092
0.0083
0.0032
0.018
0.0005
0.011
0.130
0.024
0.44
0.0057
0.0012
0.0002
0.0085
0.0066
<0.005
0.0011
0.0015
0.0006
0.003
0.00009
0.002
0.024
0.004
0.081
0.001
0.0002
0.00004
0.0016
0.0012

                                                                          0.059 *Ť
                                                                                         0.0112
                                                                                                        5.923 ť*
                                                                                                                       1.092
      TOXIC INORGANICS

      114 Antimony
      115 Arsenic
      117 Beryllium
      118 Cadmium
      119 chromium
      120 Copper
      122 Lead
      123 Mercury
      124 Nickel
      125 Selenium
                                      0.10
                                     •I
                                     <0.001
                                      0.004
                                      0.005
                                      0.049
                                     <0.04
                                     <0.001
                                      0.022
                                      0.044
                                                     0.02
0.0008
0.001
0.01
0.005
0.009
 0.002
 I
<0.001
<0.002
<0.001
<0.002
<0.04
<0.001
<0.005
 0.003
                                                                                   0.0004
                              0.0006
 I
 I
<0.001
 0.002
<0.001
 0.059
<0.04
<0.001
 0.015
 I
0.00031

0.11


0.0028
       B = present sample blank
       I = interferences present
      MData Incorrectly transcribed at proposal.  (See note on page 5-5.)
       *Not included in Total Toxic organics summation.

-------
                                                                         TABLE 5-10 (Continued)

                                                                      SEMICONDUCTOR PROCESS WASTES
                                                                              PLANT 35035
U1
 I
*>
VO
     Stream Description
     Flow  (I /hr)
     Duration  (hrs)
     Sample ID No.
TOXIC INORGANICS (Continued)

126 silver
127 Thallium
128 Zinc

Total Toxic inorganics

NOM-COMVlMNOťat POLLUTANTS

  Aluminum
  Barium
  Boron
  Calcium
  Cobalt
  Gold
  Iron
  Kagneslua
  Manganese
  Molybdenum
  Palladium
  Platinum
  Sodium
  Tellurium
  Tin
  Titanium
  Vanadium
  Xttrluw
  Lithium
  Phenols
  Total Organic carbon
  Fluoride

CONVENTIONAL POLLUTANTS

  Oil & Grease
  Total Suspended solids
  Blochenlcal Oxygen Demand
  PH
                                          Effluent
                                             8740
                                             24
                                            3722
                                Concentration    Mass Load
                                    mg/l           kg/day
                                   Dilute Rinses
                                        7904
                                        24
                                        3723
                           Concentration   Mass Load
                               tag/I           kg/day
                                                  Effluent
                                                     7681
                                                     24
                                                     3724
                                       Concentration    Mass Load
                                           mg/l           kg/day
                                           0.001
                                          <0.001
                                           0.184

                                            0.409
   0.263
   0.004
   0.372
  21.4
  <0.05
   I
   0.483
   3.79
   0.002
   0.046
   0.004
   0.003
1130
   I
  <0.025
   0.006
   0.013
  <0.003
    0.018
   0.53
  78
   8.6
                                           2.4
                  0.0002

                  0.039

                   0.085
                                                          0.055
                                                          0.0008
                                                          0.078
0.101

0.0004
0.0096
0.0008
0.0006
                                                          0.0013
                                                          0.0027

                                                           0.0038
                                                          O.U1
                                                         16.36
                                                          1.80
                  0.503
                  0
               0.002
              <0.001
              <0.001

                0.007
<0.01
<0.001
 0.015
<0,OQ5
<0.05
<0.002
<0.001
 0.089
<0.001
<0.035
<0.003
<0.003
<1.50
<0.006
<0.025
<0.002
 0.003
<0.003
  0.001
<0.001
 0.5
 0.25
                                                                         1.0
                                                                                        0.0004
                               0.0014
                               0.002
                              •cO.OOl
                               0.067

                                0.145


0.003













0.00063

0.0002

0.10
0.05
0.16
0.002
0.43
16.10
<0.05
I
0.068
2.76
0.002
<0.035
0.007
<0.003
1400
<0.006
<0.025
0.005
0.007
<0.003
0.04
0.32
36
11.2
0.00037

0.012

 0.027
                                                            0.03
                                                            0.0004
                                                            0.079
0.013

0.0004

0.0013
                                                            0.0009
                                                            0.0013

                                                             0.0074
                                                            0.059
                                                            6.64
                                                            2.065
                                                                                        0.20
         interferences present

-------
                                                                                 TMUS 5-11
                                                                        SEMICONDUCTOR PROCESS VHStSS
                                                                                PtAWT 36133
cn
 I
U1
o
       Stream Description
       Flow (I /hr)
       Duration (hrs)
       Sample ID Ho.
TOXIC ORGANICS

  4 Benzene
  7 chlorobenzene
  8 1,2.4-Trlchlorobenzene
 23 Chloroform
 25 1,2-Dichlorobenzene
 26 1.3-DlchlorobenzenŤ
 27 1,4-Dlchlorobenzem
 29 1,1-Diehloroethylene
 32 1,2-Dlchloropropsne
 3*7 1.2-Dlphenylhydrazine
 38 Bthylbenzene
 44 Hethylene chloride
 45 Methyl chloride
 48 Dlchlorobrontomethane
 51 Chlorodibrcmoniethane
 62 H-nltrosodlphenylamine
 65 Phenol
 66 Bis{2-ethylhexyl)phthaiate
 85 Tetrachloroethylene
 86 Toluene
 81 Irlchloroethylene
 89 Aldrln
 90 Dieldrin
101 Heptachlor epoxlde
102 Alpha BHC
103 Beta BHC
104 Gamma BHC
105 Delta BHC
121 Cyanide
    Xylene
Total Toxic organlcs

TOXIC IKOSGM4ICS

114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 chromium
                                   Treated Acid Wastes
                                             337
                                             24
                                            3779
                                Concentration    Mass Load
                                    •g/l           kg/day
                                            <0.01
                                            <0.01

                                            
-------
                                                                                TABLt 5-11

                                                                       SEMICONDUCTOR PROCESS WASTES
                                                                               PLANT 36133
Ul
 I
U1
      Stream Description
      Plow (I /hr>
      Duration (hrs)
      Sample ID Ho.
TOXIC INORGANICS (Continued)

120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
126 Silver
127 Thallium
128 Zinc

Total Toxic Inorganics

NON-COMVENTIONftL POLLUTANTS

  Aluminum
  Barium
  Boron
  calcium
  Cobalt
  Gold
  Iron
  Magnesium
  Manganese
  Molybdenum
  Palladium
  Platinum
  sodium
  Tellurium
  Tin
  Titanium
  Vanadium
  Yttrium
  Phenols
  Total Organic Carbon
  Fluoride
                                   Treated Acid Wastes
                                             337
                                             24
                                            3779
                                Concentration    Mass Load
                                    wg/i
                                       Effluent
                                       272,353
                                       24
                                       3780
                          Concentration    Mass Load
                              mg/l           fcg/day
                                            0.16
                                            0.045
                                            0.011
                                            0.22
                                           <0.005
                                            0.015
                                           <0.03
                                            0.087

                                            0.54
  0.411

 <3.0
425.23
 <0.02
  0.029
                                            0.042
                                            0.04
                                           <0.05

                                           <0.02

                                           <0.02
                                           <0.001
                                         1537
                                           20.1
                 0.0013
                 0.00036
                 0.00009
                 0.0018

                 0.00012
                 0
                 0.0007

                 0.0044
                                                           0.003
                                                           0.0002
                 0.0003
                 0.0003
 0.115
 0.085
•cO.OOl
 0.531
<0.005
 0.005
<0.03
 0.04

 0.844
                                  Acid Wastes
                                       189
                                       24
                                       3781
                         Concentration    Mass Load
                             mg/4           kg/day
                                                   Treated Reid
                                                      wastes
                                                        481
                                                        24
                                                        3782
                                          Concentration    Mass Load
                                              mq/t           kg/day
   0.75
   0.56

   3.47
   0.26

   5.49
   3.746
   0.1SO
  <0.001
   0.20
   0.007
   0.03
  <0.03
   0.429

 412,28
 0.010
 0.0004

 0.0005
 0.00002
 o.ooooa

 0.001

 1.109
   0.09
   0.04
  <0.001
   0.20
  <0.005
   0,020
  <0.03
   0.432

   1.855
 0.001
 0,0005

 0.002

 0,002

 0.005

 0.023
                12.4
                 0.16
0.231
0.023
0.246
153.4
0.01
0.051
0.092
12.6
0.011
0.035
<0.04
<0.05
199.5
<0.02
0.006
0.105
0.105
0.023
0.021
10
5.42
1.51
0.15
1.62
-
0.065
0.33
0.60

0.072
0.229




0.039
0.686
0.686
0.150
0.137
65.4
35.4
320.06

697
825.18
0.14
<0.02




<0.04
<0.05

<0.02

11.32


0.103
2777
50,000
0.86

1.87
-
0.0004










0.03


0.00028
7.465
134.4
0.411

<3.0
332.94
0.02
<0.02



0.044
<0.04
<0.05

<0.02

<0.02


0.004
957
24
0.005



0.0002




0.0005








o.oooor>
11.05
0.28
      CONVENTIONAL POLLUTAHTS

        Oil & Grease
        Total Suspended Solids
        Biochemical Oxygen Demand
        PH
                                      2.0
                                    176
                                   3700
                 0.016
                 1.42
                29.9
 2.4
 2
18
  15.7
1307
 117.7
   5.1
5760
 241
 0.014
15.483
 0.653
   9.8
1930
2275
 0.113
22.28
26.26

-------
     Streait Description
     Flow (I  /hr}
     Duration (hrs)
     Sample ID No.
     TOXIC ORGWHCS
                                                                         TABLE 5-11  (Continued)

                                                                      SEMICONDUCTOR  PROCESS VASfES
                                                                               PLAKT  36133
                                           Effluent*
                                           280,020
                                             24
                                            3783
                                Concentration    Mass Load
                                    •g/t           kg/day
                  Acid Vastes*
                     189
                      24
                     3185
         Concentration    Hasa toad
             Rtg/t           kg/day
                          Treated Jicid Wastes*
                                      281
                                       24
                                      3786
                         Concentration    Mass Load
                             mg/l           kg/day
                                                 Effluent*
                                                   285.800
                                                     24
                                                    3787
                                       Concentration    Hass Load
                                           wg/l           kg/day
(Jl
 I
Ul
NJ
  4 Benzene
  7 Chlorobenzene
 23 Chloroform
 25 1,2-Dichlorobenzene
 26 1,3-Dichlorobenzene
 27 l,4-0ichlorobenzene
 32 1,2-Dlehloropropane
 37 1,2-Diphenylhydrazlne
 38 Bthylbenzene
 44 Methylene chloride
 45 Methyl chloride
 48 Dlchlorobroroomethane
 51 chlorodlbrononothane
 62 N-nitrosodiphenylaraine
 65 Phenol
 66 Bis(2~ethylhexyl)phthalate
 85 Tetrachloroethylene
 86 Toluene
 87 Trlchloroethylene
 89 Aldrln
 90 Dieldrin
101 Heptachlor epoxlde
102 Rlpha BHC
103 Beta BHC
104 Gamma BHC
105 Delta BHC
121 cyanide*
Total Toxic organics

TOXIC INORGANICS

114 Antimony
115 Arsenic
117 Beryllium
118 Cadniun
119 Chromium
                                           <0.005
                                           <0.005
                                            0.002
                                            0.001
                                            0.006
                                            0.058
0.013
0,007
0.04
0.39
              <0.005
<0.005
 0.055
<0.003
<0.003
26.31
                              0.0001
0.059
                                                                                                        0.477
              <0.005
               0.002
              <0.003
              <0.003
               0.09
                                                                                                                       0.0032
                                                            0.00003
0.0005
                                                                                                                                     <0.005
              <0.005
               0.002
               0.001
               0.007
               0.054
0.014
0.007
0.05
0.037
      *Hot included In Total organics summation.
      tOrganlcs not analyzed.

-------
                                                                        SEMICONDUCTOR PROCESS WASTES
                                                                                PLANT 36133
U1
 I
cn
        Stream Description
        Plow (I  /hr)
        Duration (tirs)
        Sample ID Ho.
TOXIC INORGANICS (Continued)

120 copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
126 Silver
127 Thai 1 lira
128 Zinc

Total Toxic Inorganics

HOW-CONVENTIOHAL POLLUTANTS

  Aluminum
  Barium
  Boron
  Calcium
  Cobalt
  Gold
  Iron
  Magnesium
  Manganese
  Molybdenum
  Palladium
  Platinum
  Sodium
  tellurium
  Tin
  Titanium
  Vanadium
  Yttrium
  Phenols
  Total Organic Carbon
  Fluoride
                                           Effluent
                                           280.020
                                             24
                                            3783
                                Concentration    Mass Load
                                    mg/l           kg/day
                                             0,12
                                             0.083
                                             0.012
                                             0.523
                                            <0.005
                                             0.005
                                            <0.03
                                             0.03

                                             0.84
  0.215
  0.022
  0.289
154.8
  0.011
  0.056
  0.081
 13.22
  0.011
  0.037
 <0.04
 <0.05
225.62
 <0.02
  0.002
  0.008
  0.105
  0.022
  0.014
 11.4
 12
                 0.81
                 0.56
                 0.08
                 3.51

                 0.03

                 0.20

                 5.64
1.44
0.15
1.94

0.07
0.38
0.54
                                   Acid Wastes
                                      189
                                      24
                                      3785
                          Concentration    Mass  Load
                              mg/1            kg/day
                                        Treated Acid Wastes
                                                    281
                                                     24
                                                    3786
                                       Concentration    Mass Load
                                           mg/t           kg/day
               1.07
              <0.02
               0.005
               0.09
               0.007
               0.01
              <0.003
               0.179

              27.726
173.83

 41.0
215.29
 <0.02
 <0.02
                 0.002

                 0.00001
                 0.00002
                 0.00002
                 0.00002

                 0.0004

                 0.062
0.39

0.09
               0.08
              <0.02
               0.01
               0.18
              <0.005
               0.02
              <0.03
               0.136

               0.518
  0.793

 <3.00
578.83
 <0.02
 <0.02
0.25



0.013
0.054
0.71
0.15
0.094
76.61
80.65
O.U
<0.04
<0.05
<0.02

10.83


0.105
967
27.500
0.0002




0.024


0.0002
2.16
61.38
0.032
<0.04
<0.05
<0.02

<0.02


0.015
655
28.8
                                                                  affluent
                                                                    285,800
                                                                      24
                                                                     3787
                                                        Concentration    Mass Load
                                                            mg/l           kg/day
                 0.0004


                 0.001

                 0.0001

                 0.0008

                 0.0029



                 0.004
                                                                                                                        0.0002
 0.134
 0.10
 0.011
 0.596
 0.009
 0.005
<0.03
 0.038

 0.957
 0.92
 0.69
 0.07
 4.09
 0.06
 0.03

 0.26

 6.561
                                                                                                                        0.0001
                                                                                                                        4.42
                                                                                                                        0.19
0.231
0.023
0.226
174.10
0.009
0.04
0.089
13.55
0,011
0.043
<0,04
<0.05
257.12
<0.02
0.0
0.007
0.109
0.028
0.006
1.8
9.0
1.58
0.16
1.53

0.06
0.27
0.61

0.015
0.295




0.0
0.048
0.75
0.19
0.041
12.35
61.73
       CONVENTIONAL POLLUTANTS

         Oil  & Grease
         Total Suspended  Solids
         Biochemical Oxygen Demand
                                      4.2
                                      1.0
                                     17
                28.23
                 6.72
               114.25
               3.6
            2540
              81
                 0.008
                 5.67
                 0.19
               5.0
             136
            1415
                 o.o;)3
                 0.911
                 9.9S
 3.39
 2.7
12
23.7.5
lfl.52
B2.3

-------
                                                                               TABLE 5-12

                                                                      SEHICOHDUCTOR PROCESS VAST8S
                                                                              PLWT 36135
(Jl
I
U1
     Stream Description
     Flow (I  Xhr)
     miration (hrs)
     Sample ID Kb.
TOXIC ORGANICS

  4 Benzene
  7 cblorobenzene
 11 1,1,1-Trlchloroethane
 13 1,1-Dlchloroethane
 23 Chloroform
 24 2-Ghlorophenol
 25 1,2-Dlchlorobenzene
 27 1,4-Dichlorobenzene
 38 Bthylbenzene
 44 Hethylene chloride
 57 2-Hltrophenol
 65 Phenol
 66 Bls(2-ethylhexyl)phthalate
 67 Butyl benzyl phthalate
 68 Dl-N-butyl phthalate
 69 Di-H-octyl phthalate
 70 Dlethyl phthalate
 85 fetrachloroethylene
 86 Toluene
 87 Trlchloroethylene
121 cyanide*

Toxic Organics

TOXIC IHORGMJICS

114 Antimony
115 Rrsenlc
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Hercury
124 Nickel
12S Selenium
                                       Dilute Rinses*
                                           38035
                                             24
                                            3763
                                Concentration    Mass Load
                                    ng/1           leg/day
                  Effluent*
                   76,070
                      24
                      3764
         Concentration   Hass  Load
             mg/l            kg/day
                                           <0.005
                                           <0.001
                                           <0.005
                                            0.001
                                            0,008
                                            0.024
                                            0.232
                                            0.09
                                           <0,001
                                            1.659
                                           <0.005
0.0009
0.007
0.022
0.212
0.082

1.514
                                                                          0.013
•cO.QOl
<0.005
 0.001
 0.007
 0.048
 0.051
 0.098
<0.001
 0,531
<0,005
                              Dilute Rinses
                                     38276
                                       24
                                       3765
                         Concentration   Mass Load
                             ťg/l           kg/day
                                                                                                      <0.01B
                              0.04
0.002
0.013
0.088
0.093
0.179

0.969
                                                                                                       0.015
                                                                                                        0,070
                              <0.01

                               0,025B
                              <0.01
                              <0.005

                               0.11
<0.001
<0.005
 0.001
 0.008
 0.028
 0.347
 0.096
 0,01
 0.815
<0.005
                                                                                                                      0.014
                                                                                                                       0,64
                                                                                                                       0.023
                                                                                                                       0.101
                                            Effluent
                                               76,551
                                                  24
                                                  3766
                                       Concentration     Mass Load
                                           mg/l           kg/day
                                                                          <0.01
                                                                           0.01
                                                                                                                                     0.037
                                                                          <0.01
                                            <0.01
                                             0.011
                                             0.009

                                             0.048


0.001
0.007
0.026
0,319
0.088
0,009
0.749

<0.001
<0,005
0.001
0.007
0.05
0.05
0.102
0.01
0.52
0.01
                                                                                                                                                    0.018
                                                                                                                                                    0.068
                                                                                                                                                     0.020
                                                                                                                                                     0.017
                                                                                                                                                     0.088
0,002
0.013
0.092
0.092
0.187
0.018
0.955
0.018
      B Ť present in sample blank
      * Not Included In Total Toxic Organics summation.
      t Organics not analyzed.

-------
                                                                        TftBLE 5-12 (Continued)

                                                                     SEMICONDUCTOR PROCESS WftSTES
                                                                             PLJ4NT 36135
Ul
 I
Ul
Ul
    stream Description
    Plow {I /hr)
    Duration (hrs)
    Sample ID Ho,
TOXIC IHQRGMIICS (Continued)

126 Sliver
127 Thai Hum
128 Zinc

Total Toxic Inorganics

NOH-COMVENTIONM. POLLUTANTS

  Aluminum
  Barium
  Boron
  calcium
  cobalt
  cold
  Iron
  Magnesium
  Nanganese
  Molybdenum
  Palladium
  Platinum
  sodium
  Tellurium
  Tin
  Titanium
  Vanadium
  Yttrium
  phenols
  Total organic Carbon
  Fluoride

CONVENTIONRL POLLUTRNTS

  Oil & Grease
  Total Suspended Solids
  Biochemical oxygen Demand
  pH
                                       Dilute Rinses
                                           38035
                                             24
                                            3763
                                Concentration    Mass Load
                                    mg/l           kg/day
                                         <0.006
                                         <0.05
                                          0.04

                                          2.054
                                         14.74
                                          1.0
                                          1.0
                                          1.6
                  Effluent
                   76,070
                      24
                      3764
         Concentration    Mass Load
             mg/l           kg/day
0.037

1.875
0.913
0,913
1.461
                                 Dilute Rinses
                                    38276
                                      24
                                      3765
                        Concentration    Mass Load
                            mg/l           kg/day
                                                 Effluent
                                                76,551
                                                   24
                                                   3766
                                        Concentration    Mass Load
                                            rag/I            kg/day
0.006
0.09
0.022
0.854
0.011
0.164
0.040
1.559
0,006
<0.05
0.083
1.394
0.006
0.076
1.281
0.009
0.09
0.025
0.874
0.017
0.165
0.046
1.606
0.193
0.017
0.148
16.4
0.011
0.874
5.804
0.01
0.022
0.176
0.016
0.135

0.010
0.798

0.009
0.020
0.269
0.019
0.114
187.700
0,008
0.086
13.95
0.006
0.024
0.491
0.035
0.208

0.015
0.157

0.011
0.044
0.225
0.018
0.106
16.29
0.018
1.296
5.847
0.013
0.026
0.207
0.017
0.097

0.017
1.191

0.012
0.024
0.299
* 0.018
0.285
176.40
0.009
0.076
13.57
0.006
0.028
0.549
0.033
0.524

o.on
0.140

0.011
O.OM
                                                                       53,68
                                                                                                     14,68
2.8
1.0
7.2
 5.11
 1.826
13.14
                                                                                                     19.8
                                                                                                                    18.19
                                                                                                                                   66.18
0.033
0.006
0.048
0.012
0.0023
27
9.08
0.030
0.005
0.044
0.011
0.002
24.65
8.289
0.016
0.008
0.124
0.03
0.0128
11
14.5
0.029
0.015
0.226
0.055
0.023
20.08
26.47
0.018
0.008
0.052
0.016
0.0057
9.0
21.5
0.017
0.007
0.048
0.015
0.005
8.268
19.75
0.011
0.009
0.121
0.03
; 0.00019
4.0
11.7
0.0X0
o.on
0,222
0 . Orť5
0.003
7.341)
21. Ml
 5.8
<1.0
 3,6
10.66

 6.614

-------
                                                                                TMJL8 5-13

                                                                       SEMICONDUCTOR PROCESS WASTES
                                                                               PLAM? 36136


       stream Description                influent to Treataent                   Effluent        .     Influent to Treatwent *             Effluent*
       Flow (I /hr>                              55760                         59141                        53412                         57963
       Duration (hrs)                               24                           24                            24                            24
       Sanple-ID No.                              3595                         3596                          3598                          3599
                                       Concentration   Has* Load     concentration    Haas Load    Concentration    Hass Load    concentration    Mass Load
                                           •g/l           kg/day        ng/l           kg/day         itg/I           kg/day         Ťg/i           kg/day

       fOXie OBQWIICS

         4 Benzene                          <0.01                         <0.01
         7 Chlorobenzene                    <
-------
                                                                         fSBLE 5-13 (Continued)

                                                                      SEMICONDUCTOR PROCESS WASTES
                                                                              PLANT 36136
Ul
 I
Ul
     Stream Description
     Flow (I /hr)
     Duration (hrs)
     Sample ID No.
TOXIC INORGANICS (Continued)

126 Silver
127 Thallium
128 Zinc

total Toxic Inorganics

NOM-CONVENTIONAL POLLUTANTS

    Aluminum
    Barium
    Boron
    Calcium
    Cobalt
    Iron
    Hagneslurn
    Manganese
    Holybdenun
    Palladium
    Platinum
    Sodium
    Tin
    Titanium
    Vanadium
    Xttrium
    Phenols
    Total Organic Carbon
    Fluor ide
                                  Influent to Treatment
                                          55760
                                             24
                                           3595
                                Concentration    Mass Load
                                    mg/1           kg/day
                                          <0.005
                                          <0.025
                                           0.130

                                           2.815
3.177
0.027
0.132
5.196
0.013
3,725
2.132
0.144
0.024
                                         140.516
                                           0.200
                                           0.027
                                           0.072
                                          <0.001
                                           0.179
                                         202
                                          99.38
               0.174

               3.76
                                   Effluent
                                   59141
                                     24
                                   3596
                        Concentration    Mass Load
                            mg/l   '        kg/day
 <0.003
  0.065
  0.027

  1.081
4.25
0.036
0.177

0.017
4,985

0.193
0.032
0.227
0.012
0.102
243.708
0.014
o.osa
6.794
0.021
0.018
  0.092
  0.038

  1.54
                 0.322
                 0.017
                 0.145

                 0.02
                 0.125

                 0.03
                 0.026
                            influent to Treatment
                                    53412
                                       24
                                     3598
                          Concentration    Mass Load
                              mg/l           kg/day
 <0.005
 <0.025
  0.289

  4.27
                 5.749
                 0.016
                 0.431
                 3.544
                 0.016
                 3.760
                 1.5
                 0.209
                 0.026
  0.310

  5.47
                                                 Effluent
                                                   57963
                                                      24
                                                    3599
                                         Concentration    Mass Load
                                             mg/l           kg/day
  0.006
  0.035
  0.025

  0.905
7.37
0.02
0.552

0,02
4.82

0.267
0.033
0.292
0.01
0.198
171.508
0.007
0.106
4.93
0.025
0.018
  0.008
  0.049
  0.035

  1.26
                                               0.406
                                               0.0139
                                               0.275

                                               0.0097
                                               0.117

                                               0.035
                                               0.025

0.268
0.036
0.096

0.24
270.3
133
38.906
0.012
0.007
0.064
0.002
0.112
191
10.50

0.017
0.01
0.091
0.003
0.16
271.1
14.9
21.732
0.168
0.033
0.109
<0.001
0.038
193
148.75

0.215
0.042
0.14

0.049
247.4
190.68
98.066
0.028
0.006
0.054
0.033
0.115
130
12

0.039
0.008
0.075
0.046
0.16
180.8
16.7
     CONVENTIONAL POLLUTANTS

         Oil & Grease
         Total Suspended Solids
         Biochemical Oxygen Demand
         pH
                                     20.1
                                     72
                                    330
              26.90
              96.35
             441.62
  5.2
 56
300
  7.38
 79.5
425.8
  7.3
 80
290
  9.36
102.55
371.75
  6.9
 44
250
  9.6
 61.21
347.8

-------
                                                                         TABLE 5-13  (Continued)

                                                                      SEMICONDUCTOR  PROCESS WRSTBS
                                                                              PLANT  36136


     Strea* Description                Influent  to Treatment*              Effluent'*'
     Flo* ((. /hr)                                61225                          61211
     Duration (hrs>                              24                            24
     Sample ID Ho.                               85110                          85111
                                     Concentration    Mass Load    Concentration    Mass Load
                                         ťg/l           kg/day         mg/l           kg/day

     TOXIC ORGRNICS

       4 Benzene
       7 chlorobenzene
      11 1,1,1-Trlchloroethane
      13 1 , 1-Dichloroethane
      23 chloroforn
      24 2-Chlorophenol
      25 1,2-Dlchlorobenzene
      27 1 , 4-Dlchlorobenzene
      29 1,1-Olchloroethylene
      31 2,4-Dlchlorophenol
      38 Ethyl benzene
      44 Methylene chloride
      51 Chlorodlbrotaomethane
tn    55 naphthalene
 I     57 2-Hltrophenol
g    65 Phenol
      66 Bls(2-ethylhexyl)phthalate
      67 Butyl benzyl phthalate
      68 Dl-N-butyl  phthalate
      69 Dl-H-octyl  phthalate
      70 Diethyl phthalate
      71 Dimethyl phthalate
      85 Tetrachloroethylene
      86 Toluene
     121 Cyanide*                          0.005                        ŤJ.005

     Total Toxic Organlcs

     TOXIC
     114 Antimony                         <0.005                        <0.005
     115 Brsenlc                          <0.003                        <0.003
     117 Beryllium                        <0.001                        <0.001
     118 Cadnlum                           0.007          0.010          0.002          0.003
     119 Chromium                          0.038          0.056          0.019          0.028
     120 Copper                            0.691          1.02           0.033          0.048
     122 Lead                              0.175          0.257          0.06           0.088
     123 Mercury                          <0.001                         0.003          0.004
     124 Hlcfcel                            1.039          1.527          0.576          0.846
     125 Selenium                         <0.003                        <0.003
     * Mot Included In total toxic Organlcs summation.
     t Organlcs were not analyzed

-------
                                                                         THBLE 5-13 (Continued)

                                                                      SEMICONDUCTOR PROCESS VASTBS
                                                                              PLANT 36136
     stream Description
     Plow (i /hr)
     Duration (hrs)
     Simple ID Ho.
     TOXIC IHOBGANICS (continued)

     126 Silver
     127 Thallium
     128 Zinc

     Total Toxic Inorganics

     NON-CONVENTIONAL POLLUTANTS
                              influent to Treatment
                                       61225
                                       24
                                       85110
                            Concentration    Mass Load
                                eg/i           kg/day
                                 <0.005
                                 <0.025
                                  0.183

                                  2.133
                 0.269

                 3.14
                                 Effluent
                                     61211
                                     24
                                     85111
                          Concentration    Mass Load
                                      •      kg/day
  0.006
  0.065
  0.031

  0.795
  o.ooae
  0.095
  0.046

  1.17
in
I
m
Alumlnua
Barium
Boron
Calcium
Cobalt
Gold
Iron
Bagneslua
Manganese
Molybdenum
Palladium
Platinum
Sodlui
Tellurlun
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
  2.838
  0.047
  0.233
  7.6
  0.008

  2.065
  2.507
  0.126
  0.026
 <0.025
 <0.03
125.816
 <0.02
  0.076
  0.020
  0.071
 <0.001
  0.114
 76
 83.75
4.17
0.069
0.34

0.012
3.03

0.185
0.038




0.112
0.029
0.10

0.168
111.67
123.1
0.253
0.013
0.144
253.408
0.012
0.146
6.462
0.023
0.015
<0.025
<0.03
52.456
<0.02
0.02
0.007
0.06
0.028
0.181
136
17.50
0.37
0.019
0.212

0.018
0.214

0.034
0.022




0.029
0.01
0.088
0.041
0.266
199.8
25.7
     CONVENTIONAL POLLUTANTS

         Oil & Orease
         Total Suspended Solids
         Biochemical oxygen Demand
         pH
                                  7.1
                                 72
                                140
                10.4
               105.8
               205.7
  7.8
 60
330
 11.46
 88.14
484.8

-------
      stream Description
      Flow {1  /hr)
      Duration (hrs)
      Sample ID Ho.
     TOXIC OROANICS
                                    Stripper guench Rinse*
         TABLE 5-14

SHXICOHDUCTOR PROC8SS WASTBS
        PLANT 41061

     Acid Wastes
                           Stripper Quench
                                            3265 ft                       3262                           3260
                                Concentration    Mass Load    concentration    Hass  Load    concentration   Mass Load
                                    mg/t           Kg/day         ťg/l           kg/day         ag/l           kg/day
                                 Acid Wastes*
                                                                    3264
                                                      Concentration   Hass  Load
                                                           mg/l           kg/day
ui
 I
a\
o
  4 Benzene                          <0.01 •
 11 l.l.l-Trichloroethane            <0.01 •
 23 Chloroform                        0.044 •
 25 1,2-Dichlorobenzene               0.800 •
 26 1,3-Dlchlorobenzene
 27 It4-Dlchlorobenzene              <0,01 •
 31 2,4-Dichlorophenol
 37 l,2-DiphenylhydrazinŤ
 38 Bthylbenzene                      5.40 *
 44 Hethylene chloride               <0.01 f
 48 Dlchlorobromofliethane             <0.01 f
 51 Chlorodlbrononethane             <0.01 •
 58 4-Nitrophenol
 65 Phenol                            0.520 ť
 66 Bls(2-ethylhexyl)phthalate       <0.01 •
 67 Butyl benzyl phthalate           <0,01 f
 68 Dl-H-butyl phthalate             <0.01 t
 69 Dl-H-octyl phthalate             <0.01 •
 70 Dlethyl phthalate                <0.01 f
 78 Anthracene                       <0.01 •
 81 Phenanthrene                     <0.01 •
 85 Tetrachloroethylene               0.096 •
 66 Toluene
 87 Trlchloroethylene                <0.01
121 cyanide*                         <0.006
total Toxic Organlcs                  6.86
                                                                         <0.01

                                                                          0.034

                                                                         <0.01




                                                                         <0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
                                                                         <0.01

                                                                         <0.005
                                                                           0.034
                              <0.01

                              <0.01
                              <0.01
                              <0.01
<0.01
<0.01
<0.01
<0,01
<0.01

<0.01
                              <0.01

                              <0.005
                               0.066
                              <0.01
                                                              <0.01
                                                              <0.01
                                                              <0.01
                                                              <0.01
                                                              <0.01
                                                              <0.01 *
                                                              <0.01 f

                                                              <0.01

                                                              <0.005
                                                               0.066
      TOXIC IHORGANIGS

      114 Antimony
      115 Arsenic
      118 Cadmium
      119 chromium
      120 Copper
      122 Lead
      123 Mercury
      124 Nickel
                                     <0.002
                                     <0.003
                                     <0.003
                                     <0.020
                                     <0.003
                                     <0.01 t
                                     <0.001
                                     <0.025
<0.002
<0.003
<0.003
<0.02
<0.003
<0.01
<0.001
<0.025
<0.002
<0.003
<0,003
<0.02
<0.003
<0.01
<0.001
<0.025
                                                              <0.002
                                                              <0.003
                                                              <0.003
                                                              <0.02
                                                              <0.003
                                                              <0.01
                                                              <0.001
                                                              <0.025
       t Pesticides not analyzed.
       * Not included In Total  Toxic organics summation.
       • Data not transcribed from analytical sheet at proposal,   (see note on page 5-5.)
      ttlt Data Incorrectly transcribed at proposal,   (see  note on  page 5-5.)

-------
                                                                          TABLE 5-14  (Continued)

                                                                       SEMICONDUCTOR  PROCESS WASTES
                                                                               PLANT  41061

       Stream Description                  Stripper Quench Rinse*            Reid Wastes*            Stripper Quench Rinse*             Acid Wastes*
       Plow (t /hr)
       Duration (hrs)
       Sample ID Ho.                               3265 M                       3262                            3260                          3264
                                      Concentration    Mass Load    concentration     Mass Load    Concentration    Mass  Load    Concentration    Mass Load
                                          rag/l           kg/day         rog/t           kg/day         mg/l            kg/day         mg/l            kg/day

       TOXIC INORGANICS  (continued)

       126  Silver                           <0.002 •                      <0.002                         <0.002                         <0.002
       127  Thai Hun                         <0.020 •                      <0.02                          <0.02                          <0.02
       128  Zinc                            <0.002 t                       0.005                         0.002                          0.002

       Total Toxic Inorganics                                              0.094                         0.091                          0.091

       NON-CONVENTIONAL  POLLUTANTS

           Aluminum
           Barium
           Boron
           Calclun
           Cobalt
           Gold
Y1         iron
0^         Magnesium
i-i         Manganese
           Molybdenum
           Palladium
           Platinum
           Sodium
           Tellurium
           Tin
           Tltanluo
           Vanadium
           Yttrium
           Phenols                           0.02                         <0.01                          0.026                         <0.01
           Total Organic Carbon              4 •                          <2.0 I                         <2 •                           <2 •
           Fluoride                          0.07 •                      134 •                           0.14 •                         0.20  t

      CONVENTIONAL POLLUTANTS

           Oil  & Grease                     27 •                          27 •                           14 •                           31 •
           Total suspended Solids            9 t                           7 •                           5 •                            7 i
           Biochemical Oxygen Demand          Ť                             *                             *                              *
           pH                               5.1 i                         3.6 •                         3.4 •                          3.7 •

       t Non-toxic metals not analyzed.
       * Blank out oC control range.  Results not reliable.
       t Data  not transcribed from analytical sheet at proposal.  (See note on page 5-5.)
       if Data  Incorrectly transcribed at proposal.  (See note on page 5-5.)

-------
                                                                   TAStS 5-14 (Continued)
                                                                BOKCOMDUcrot ptocsss WASTES
                                                                        PLWff 41061
StretM Description
Plow (t /hr)
Duration (hrs)
       ID Ho.
                            SMlconductor BfCluentt
                                    476962 II
                                       24
                                      32S1
                          Concentration    Bass Load
                              •3/t           kg/day
tOXIC OSOWICS

  1 Acenapthene
  4 Benzene
  6 Carbon Tetraehloride
  a
 a
.2.4~TrIchlorobenzerie
,1,1-lrIchloroethane
        23 chlorofora
        25  .2-Dlchlorobenzene
        26  .3-Oichlorobanzene
        27  .4-Dlchlorobenzene
        29  ,l-DlchloroethylenŤ
        30  ,2-Trans-Dlchloroethyleiw
        38 Bthylbenzene
        39 Fluoranthene
        44 Hethylme chloride
        45 Methyl Chloride
ui      48 Dlchlorobrononethana
 I       51 chlorodlbrowMietbane
°*      55 Naphthalene
M      57 2-Nitrophenol
        65 Phenol
        66 BU<2-ethylhexyl)phthalate
        67 Butyl benzyl phthalate
        68 Dl-H-butyl phthalate
        69 Di-K-octyl phthalate
        70 Dlethyl phthalate
        85 Tetrachloroethylene
        86 Toluene
        87 Trlchloroethylene
        121 Cyanide*
        Total Toxic Organlcs

        TOXIC  IHOROMIICS

        114 Anttmny
        115 Arsenic
        118 Cadmium
        119 Chronlui
        120 Copper
        122 Lead
        123 Mercury
        124 Nickel
        125 Selentua
<0.01

 0.020
                                     <0.01
                                     <0.01
                                     <0.01
                                     
-------
                                                                          TABLE 5-14 (continued)

                                                                       SEMICONDUCTOR PROCESS WASTES
                                                                               PLANT 41061
ui
CTl
U)
      Stream Description
      flow (I /hr)
      Duration (hrs)
      Sample ID Ho.
TOXIC IMORGftHICS (Continued)

126 Silver
127 Thallium
128 Zinc

fotal Toxic Inorganics

NON-CONVENTIONAL POLLUTWITS

  Aluminum
  Barium
  Boron
  Calcium
  Cobalt
  Cold
  Iron
  Magnesium
  Manganese
  Molybdenum
  Palladium
  Platinum
  sodium
  Tellurium
  Tin
  Titanium
  Vanadium
  Yttrium
  Phenols
  Total Organic carbon
  Fluoride

COHVENTIONftL POLLUTANTS

  Oil & Grease
  Total Suspended Solids
  Biochemical Oxygen Demand
  pH
                                  Semiconductor Effluentt
                                          476962 ft
                                             24
                                            3251
                                Concentration    Hass Load
                                    rag/1           kg/day
                   Scrubber  Vastest
                       2271  Ťt
                         24
                        3250
            Concentration    Hass Load
                mg/l           kg/day
                                           <0.002
                                           <0.02
                                            0.006

                                            0.034
   0.069
   0.389
<0.002
<0.02
 0.021

 0.07
                                            0.01
                                            3
                                          215
   0.114
  34.34
2461
                                                          11.45
<0.3
34
39
                                                                         15
                                    Effluentf
                                    953923 if
                                       24
                                      3252
                         Concentration    Hass Load
                             mg/l           leg/day
0.0011

0.004
1.836
2.106
                                                                                         0.81
       t Non-toxic metals not analyzed.
       t Data not transcribed from analytical sheet at proposal.  (See note on page 5-5.)
      St Data incorrectly transcribed at proposal.  (See note on page 5-5.)
 0.008
<0.02
 0.088

 2.0
<0.013
11
34
                                                                                                        1.24
                                                                                                       52
                                        Semiconductor Effluentf
                                                  476962 **
                                                     24
                                                    3255
                                       Concentration    Hass Load
                                           mg/l           kg/day
                                                               0.183
                                                               2.015
                                                              45.79
251.8
778.4
                                                              28.39
                                                            1190
                <0.002
                <0,02
                 0.004

                 0.005
 <0.01
 <2 ť
102 tt
                                                            20 •
                                                             5 ť
                                                            <2 Ť
                                                             1.8 Ť
                                                                                             0.046
                                                                                                                                                     0.057
                                                                                          H68
                                                          228.9
                                                           57.24

                                                           20.6

-------
                                                                          TABLE 5-14 (Continued)

                                                                       SEMICONDUCTOR KX3CSSS VASTSS
                                                                               PUIOT 41061
      StreiM Description
      Plow (I /hr)
      Duration (hrs)
      Sample ID Ko.
                                      Scrubber Vastest
                                           2271 Ť
                                            24
                                           3254
                               Concentration    Mass Load
                                   •3/1           kg/day
                                                                             Slfluentt
                  953923 M
                     24
                    3256
        Concentration    Mass Load
            mg/l           kg/day
                         Semiconductor BCfluentt
                                   476962 M
                                      24
                                     3259
                        Concentration    Mass Load
                            ťg/l           kg/day
                                        Scrubber Vastest
                                                    2271 It
                                                     24
                                                    3258
                                       Concentration    Mass Load
                                           wg/t           kg/day
      TOXIC OROKNICS
01
 I
en
  4 Benzene
  7 chlorobenzene
 11 1.1,1-Trichloroethane
 13 1,1-Dichloroethane
 23 Chloroform
 24 2-chlorophenol
 25 1,2-Dichlorobenzena
 27 1,4-Dlchlorobenzeno
 29 1,1-Dichloroethylene
 31 2,4-Dichlorophenol
 38 Bthylbenzene
 44 Hethylene chloride
 51 ChlorodlbroBonethane
 55 Naphthalene
 57 2-Nitrophenol
 65 Phenol
 66 8ls(2-ethylhexyl)phthalate
 67 Butyl benzyl phthalate
 68 Bi-W-butyl phthalate
 69 Dl-H-octyl phthalate
 70 Diethyl phthalate
 85 Tetrachloroethylene
 86 toluene
121 cyanide*

Total toxic Organlcs

tOXIC IHORGRHICS

114 Antimony
115 Arsenic
118 Cadmium
119 Ctiroralua
120 Copper
122 Lead
123 Kercury
124 Nickel
125 selenium
                                            0.006
                                            0.028
                                           <0.003
                                           <0.003
                                           <0.02
                                            0.026
                                           <0.01
                                            0.003
                                           <0.025
                                                           0.0003
                                                           0.002
0.0014
0.0002
              <0.005
<0.02
 0.017
<0.003
 0.116
 1.333
 0.04
 0.001
 0.355
 0.389

 2.656
30.52
 0.916
 0.023
 8.13
                                                                                                       <0.005
<0.02
<0.003
<0.003
 0.02
<0.003

<0.0l
<0.025
<0.003
                                                           0.229
                                                                                                                                     <0.005
 0.02
<0.003
<0.003
<0.02
 0.024
<0.01
<0.001
<0.025
                                                                                                                                                     0.001
                                                                                         0.0013
        * Not Included In total Organics sunmatlon.
       It Data Incorrectly transcribed  at proposal.
        f Organics were not analyzed
                                              (See note on page 5-5.)

-------
                                                                        TABLE 5-14 (Continued)

                                                                     SEMICONDUCTOR PROCESS WASTES
                                                                             PUNT 41061
cn
 1

-------
                                                                                  TABLE 5-14 (Continued)

                                                                               SEMICONDUCTOR PROCESS WASTES
                                                                                       fUHT 41061
Ul
 I
               Streaa Description
               Flow (t /hr)
               Duration (tin)
               sample 10 Ho.
                                     Crystal Effluent
                                             24
                                            3267
                                 Concentration    Kate Load
                                    ŤJ/l           kg/day
 TOXIC 0B3WHCS

   4 Benzene
   6 Carbon tetrachlorlde
   6 1.2,4-Trichlorobenzene
  11 1,1,1-Trichloroelhane
  13 1,1-Dtchloroethane
  23 chloroform
  24 2-Chlorophenol
  25 1,2-Dlchlorobenzene
  26 1,3-olchlorobenzene
  27 l,4~DlchlorobenzŤne
  29 1,1-Olchloroethylene
  37 l,2~Dlphenylhydrazine
  38 Ethylbenzene
  39 Fluoranthene
  44 Hethylene chloride
  51 chlocodibromonethane
  57 2-Nltrophenol
  58 4-Hltrophenol
  65 Phenol
  66 Bis(2-ethylhexyOphthalate
  67 Butyl benzyl phthalate
  68 Dl-N-butyl phthalate
  69 Di-N-octyl phthalate
  70 Dlethyl phthalate
  85 Tetrachloroethylene
  86 Toluene
  87 Trichloroethylene
 113 Toxaphene
 121 Cyanide**
 Total Toxic organlcs

 TOXIC IHOROKNICS

 114 Rntireony
 115 Arsenic
 117 Berylliun
 118 Cadmium
 119 ChroRlun
, 120 Copper
 122 Lead
 123 Mercury
 124 Nickel
 125 Selenium
          Effluent*
          439110*
             24
          4i-33-rei
concentration    Kara Load
    •g/l           kg/day
                                                   
-------
                                                                         TABLE 5-14 (Continued)

                                                                      SEMICONDUCTOR PROCESS WRSTES
                                                                              PLANT 41061


     Stream Description                         Gate                        Effluent* t                    Bffluentt t                   City Water* t
     Flow (t /hr)                         Crystal effluent*                  439110*                        439110*                       439110*
     Duration (hrs)                               24                            24                             24                            24
     Sample ID Bo.                               3267                        41-33-FE1                     41-33-FB2                     41-33-CWl
                                     Concentration    Mass Load    Concentration    Mass Load    Concentration    Mass Load    Concentration    Mass Load
                                         >ťg/1           kg/day         mg/l           kg/day         mg/t           kg/day         mg/l           kg/day

     TOXIC INORGANICS (continued)

     126 Silver                           <0.002                        <0.015                                                      <0.015
     127 Thallium                         <0.02                         <0.002                                                      <0.002
     128 Zinc                              0.002                         0.093          0.98                                         0.755          7.96

     Total Toxic Inorganics                0.005                         2.01          21.18                                         1.075         11.33

     SON~CONVESIf IONAL POLLOTBMTS

         Aluminum
         Barium
         Boron
         Calcium
         Cobalt
Ul       Gold
 I        Iron
^       Magnesium
         Hanganese
         Molybdenum
         Palladium
         Platinum
         Sodium
         Tellurium
         fin
         Titanium
         Vanadium
         Yttrium
         Phenols
         Total Organic Carbon             25 f                          14.7          154.9                                          3.70          38.99
         Fluoride                         72 •

     eoNvamoNftL POLLOTWJTS

         Oil & Grease                     12.5 •
         Total Suspended Solids         11 *                            39.0          411.0                                         <0.01
         Biochemical  Oxygen Demand           *                           51.0          537.5                                         41.0          432.1
         pH                                1.7 ť                         9.6                                                         8.2


      tKon-toxic metals not analyzed.
      t Hot used In data base because these metals are associated  with  metal finishing.
      * estimated Flow Rate
      I Data not transcribed from analytical sheets at proposal.   (See  note on page  5-5.)

-------
                                                                         TABUS 5-H (Continued)

                                                                      SBHICOM3UCT08 PROCESS WASTES
                                                                              PUNT 41061


     Stream Description                        BfEluentf           Silicon Crystal Bffluentft •
     Flow (I /hr)                               953923 II                     21577
     Duration (hrs)                               24                            24
     Sample ID Mo.                               3266                          3249
                                     Concentration    Mass Load    Concentration    Mass Load
                                         *g/l           kg/day         ng/l           kg/day

     toxic ORGIWICS

       4 Benzene
      11 1,1,1-Trlchloroethane
      13 1,1-Dichloroethane
      23 Chloroform                                                      0.020          0.0104
      25 1,2-Dlchlorobenzene
      27 1,4-Dichlorobenzene
      29 1,1-Dichloroethylene
      38 Ethylbenzene
      39 Fluoranthene                                                   <0.01
      44 Methyiene chloride                                             <0.01
      51 chlorodlbronomethane                                           <0.01
      57 2-Nitrophenol                                                   0.033          0.017
      65 Phenol                                                          0.035          0.018
Ln    66 Bis(2-ethylhexyl)phthalate                                     <0.01
 I     67 Butyl benzyl phthalate                                         <0.0i
<^>    68 Dl-M-butyl phthalate                                           <0.01
00    69 Di-N-octyl phthalate                                           <0.01
      70 Dlethyl phthalate                                              <0.01
      85 Tetrachloroethylene
      86 Toluene                                                        <0.01
      121 cyanide*                          0.009          0.206          0.106          0.055

      Total Toxic organlcs                                                0.088          0.046

      TOXIC INORGANICS

      114 Rntimony                         <0.002                        <0.002
      115 Arsenic                           0.018          0.412         <0.003
      117 Beryllium                                                     <0.004
      118 Cadmium                          <0.003                        <0.003
      119 Chromium                          0.098          2.244         <0.020
      120 copper                            0.558          12.77           0.003          0.002
      122 Lead                              0.048          1.099         <0.010
      123 Mercury                           0.001          0.023         <0.001
      124 Nickel                            0.03           0.687         <0.025
      125 Selenium                                                       <0.003

      tOrganlcs were not analyzed.
      *Hot  included in Total Organics figure.
      ttPestlcldes  were  not  analyzed.
       * Data not  transcribed  from analytical  sheet  at proposal.   (See note on page 5-5.)
      ft* Data incorrectly transcribed at proposal.   (See note  on  page  5-5.)

-------
                                                                          TftBLB 5-14 (Continued)

                                                                       SanCOHDUCTOR PROCESS WASTES
                                                                               PLANT 41061
Ui
 I
a\
      stream Description
      Plow  (I /hr)
      Duration  (hrs)
      Sample 10 Ho.
TOXIC INOROWJICS  (continued)

126 silver
127 Thai HUB
128 zinc

Total Toxic Inorganics

KOH-CONVENTIOtffiL POLLUTANTS

    Aluminum
    Barium
    Boron
    Calcium
    Cobalt
    Gold
    Iron
    Magnesium
    Manganese
    Molybdenum
    Palladium
    Platinum
    Sodium
    Tellurium
    Tin
    Titanium
    vanadium
    Xttrlura
    Phenols
    Total Organic carbon
    Fluoride

OTHER POLLUTANTS

    Oil S Grease
    Total Suspended Solids
    Biochemical Oxygen Demand
    PH
          Effluentf
           953923 M
             24
            3266
Concentration    Mass Load
    ng/t           kg/day
silicon Crystal Bffluentt Ť
           21577
             24
            3249
Concentration    Mass Load
    mg/l           kg/day
                                            0.002
                                           <0.02
                                            0.012

                                            0.767
                     0.046
                     0.275
                    17.56
     <0.002
     <0.020
      0.003
                                                  0.002
                                           22
                                           67
                                           10 •
                                           56 •
                                             t
                                            9.7 •
                   503.7
                  1534
                   228.9
                  1282
     •eO.OM
      2
      0.65
      1.4
      2  '
      1.7
1.036
0.337
0,725
1.036
       t Non-toxic metals were not analyzed.
       * Blank out of control range.  Results not reliable.
       t Data not transcribed from analytical sheet at proposal.   (See note on page 5-5.)
      it Data incorrectly transcribed at proposal.  (See note en  page 5-5.>

-------
                                                                              TMtt 5-15

                                                                      SEHICOHDUCTOR PROCESS WASTES
                                                                              PLAHT 42044
     Streaa Description
     Mow (I /hr)
     Duration (hrs)
     Sanple ID Ho.
     TOXIC OROANICS
                                        Dilute
                                          34505
                                            24
                                           3668
                               Concentration
                                   ng/t
                                                      Mass Load
                                                        kg/day
         Effluent
          40504
             24
            3671
Concentration    Hass Load
    Ťg/t           kg/day
         Dilute Rinses
            33174
              24
            3672
concentration    Have Load
    Mg/l           kg/day
           Effluent
            36907
              24
            36T3
concentration    Bass Load
    ťg/l           kg/day
ui
 I
-J
O
  4 Benzene
 11 1,1,1-Trichtoroethane                                          0.003          0.0029
 23 Chloroform                        0.006          0.005          0,013          0.013          0.005          0.004          0.004          0,0035
 24 2-Chlorophenol                                                  0.003          0.0029
 25 1,2-Dlchlorobenzene               0.009          0.007          0.047          0.046          0.001          0.0008         0.040          0,035
 26 1,3-Dlchlorobenzene                                                                                                        0.005          0.004
 27 1,4-Dlchlorobenzene              <0.01                                                       <0.01                         <0.01
 29 1,1-Dichloroethylene
 38 Ethylbenzene
 44 Methylene chloride                0.101          0.084          0.056          0.054          0.049          0.040          0.044          0.039
 51 chlorodibrcacisethane
 55 Naphthalene                       0.006          0.005                                   .                                     #i           0.106
 57 2-Nltrophenol                     0.002          0.0017         0,013          0.013                                        0.006          0.005
 58 4-Hltrophenol
 65 Phenol                            0.011          0.009          0.195          0.190                                        0.180          0.159
 66 Bis(2-ethylhexyl)phthala          0.002          0.0017         0.07           0.068          0.011          0.009          0.007          0.006
 67 Butyl benzyl phthalate
 68 Dl-N-butyl phthalate              0.004          0.003          0.05           0.049          0.003          0.002          0.005          0.004
 69 Dl-H-octyl phthalate
 70 Diethy1 phthalate
 85 fetrachloroethylene                                            0.005          0.0049                                       0,015          0.013
 86 toluene                           0.002          0.0017         0,002          0.0019         0.002          0.0016         0.002          0.002
 87 frlchloroethylene
121 Cyanide*                          0.030          0.025          0.030          0.029          0.005          0.0041         0.008          0.0071

Total Toxic Organlcs                  0.112  ť      0.093          0.444  tt      0.432          0.060 Ť       0.051          0.279 It       0.247

TOXIC INOROftHICS

114 Rntlraony                         <0.001                         <0.005  I                     <0.001                         0.001          0.009
115 Rrsenic                           0.003          0.0025         0.046          0.045          0.002          0.0016         0.006          0.005
117 Beryllium                        <0.001                         <0.001                        <0.001                        <0.00l
US Cadmium                          <0.002                         0.003          0.003         <0.002                         0.003          0.0027
119 Chromium                         <0.001                         0.152          0.15          0.005          0.004          0.154          0.136
120 Copper                           <0.002                        0.022          0.021          0.004          0.003          0.011          0.01
122 Lead                             <0.04                         0.052          0.051         <0.04                        <0.04
123 Mercury                          <0.001                         <0.011                        <0.001                        <0.00i
124 Nickel                           <0.005                        0,009          0.0087        <0.005                         0.012          0.011
125 Selenium                          0.003          0.0025        0.175  1       0.170          0.001          0.0008         0.032          0.028

 * Hot Included  in Total Toxic Organlcs summation.
M Data Incorrectly transcribed at proiwsal.  (See note on page 5-5.)
 I Interference.

-------
                                                                           TABLB  5-15  (Continued)

                                                                       SEMICONDUCTOR  PROCESS HASTES
                                                                               PLANT  42044
Ul
 i
-4
       Stream Description
       Plow (I /hr)
       Duration (hrs)
       Sample ID Ho.
       TOXIC ISORGRHICS (Continue*)

       126 Silver
       127 Thallium
       128 Zinc
Total Toxic inorganics

HOH-COWBHTIOHAL POLLUTANTS

  Aluminum
  Barium
  Boron
  Calcium
  Cobalt
  Sold
  Iron
  Magnesium
  Manganese
  Molybdenum
  Palladium
  Platinum
  Sodium
  Tellurium
  fin
  titanium
  Vanadium
  Yttrium
  Lithium
  Phenols
  Total Organic Carbon
  Fluoride

CONVENTIONAL POLLUTANTS

  Oil & Grease
  Total suspended Solids
  Biochemical oxygen Demand
  PH
                                        Dilute Rinses
                                           34505
                                             24
                                            3668
                                Concentration    Mass Load
                                    •g/l           kg/day
                                  Effluent
                                   40504
                                      24
                                     3671
                         Concentration    Mass Load
                             *g/t  .         kg/day
                                 Dilute Rinses
                                    33774
                                      24
                                    3672
                        concentration    Mass Load
                            mq/l           leg/day
<0.001
<0.001
 0.157

 0.218
 0.163
 0.066
 0.003
 0.264
<0.005
<0.05
 0.002
 0.138
<0.025
<0,001
<0.035
<0.003
<0.01
<1.5
 0.008
<0.025
<0.002
<0.001
<0.003

-------
                                                                   WBtS 5-15 (Continued)

                                                                 SEMICONDUCTOR PHOCSSS WASTES
                                                                         KAHT 42044


streaM Description                      Dilute Rinses                LCD BCEluŤnt                     Effluent
Mow (I /hr)                               30001                          1319          '              34533
Duration (hrs)                               24                            24                            24
Saaple ID Ho.                               3674                          3669                         3615
                                Concentration    Haas Load    Concentration    Mass Load    concentration    Mass Load
                                    mg/t           kg/day        *g/l          kg/day         *g/l           kg/day

TOXIC 08GWUCS

  1 Acenaphthene                                      •             <0,01 •
  4 Benzene                                                        <0.01
  7 Chlorobenzene
 11 1,1,1-trichloroethane                                          <0.01                          0.130          0.108
 23 Chloroform                        0,004          0.003         <0,01                          0.010          0.008
 24 2-Chlorophenol                                                                                0.012          0,010
 25 1,2-Diehlorobenzene               0.002          0.001                                        0,033 I        0.027
 26 1,3-Dlchlorobenzene                                            <0.01                          0.005          0.004
 27 1,4-Dlchlorobenzene              <0.01                         <0.01                         <0.01
 44 Hethylene chloride                0.067          0.048          0.040          0.007           0.070          0.058
 SS naphthalene                                                                            •       0.033          0.021
 57 2-Hitrophenol                                                                                 0.011          0.009
 65 Phenol                            0,001          0.0004                                       0.180          0.149
 66 Bis(2-ethylhexyl)phthala          0.012          0.0086         0.010          0.0018         0.020          0.0166
 67 Butyl benzyl phthalate
 68 Di-M-butyl phthalate              0.006          0.004         <0.01                          0.004          0.003
 69 Dl-N-octyl phthalate
 70 Dlethyl phthalate                                              <0.01
 85 Tetrachloroethylene                                                                           0.001          0.0008
 86 toluene                           0.002          0.0014        <0.01
 87 Trlchloroethylene
121 Cyanide*                         <0,001                         0.017          0.003           0.004          0.0033

total toxic organics                  0.079 It       0.057          0.040 it       0.007           0.489   ť*      0.405

TOXIC INOHGftNICS

114 antimony                          0.001          0.007         <0,001                        <0.001
115 Arsenic                          <0.01 I                        0.004          0.0007         0.12           0.10
117 Beryllium                        <0.001                        <0.001                        <0.001
118 cadmium                          <0.002                        <0.002                         0.003          0.0025
119 Chromium                         <0.001                         0.023          0.005           0.205          0.170
120 copper                           <0.002                         0.003          0.0005         0.012          0.01
122 Lead                             <0.04                         <0.04                          0.049          0.041
123 Mercury                          <0.001                        <0.001                        <0.001
124 Nickel                           <0.005                        <0.005                         0.009          0.0075
125 Selenium                         <0.001                        <0.001                         0.046          0.0038

*Not Included in Total toxic organics summation.
 • Data not  transcribed from analytical sheet at proposal.  (See note on page 5-5.)
tit Data incorrectly transcribed at proposal,  (see note on page 5-5.)

-------
                                                                   TABLE 5-15  (continued)

                                                                SEMICONDUCTOR  PROCESS  WASTES
                                                                         PUU1T  42044
Stream Description
Flow (ť /hr)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (Continued)

126 Silver
127 Thallium
128 Zinc
        Dilute Rinses
           30001
             24
            3674
Concentration    Hass toad
    mg/l           kg/day
     <0,001
     <0,001
     <0,001
                                                                    LCD  Effluent
                                                                          7319
                                                                           24
                                                                          3669
                                                             Concentration    Hass Load
                                                                 mg/l           kg/day
                                                                   0.001
                                                                   <0.001
                                                                   0.008
                                   Effluent
                                     34533
                                       24
                                     3675
                         Concentration    Hass Load
                             mg/l           kg/day
                0.0002

                0.0014
              <0.001
              <0.001
               0.01
                              0.008
Total Toxic inorganics

NON-CONVENTIONAL POLLUTANTS

  Aluminum
  Barium
  Boron
  Calcium
  cobalt
  Gold
  Iron
  Magnesium
  Manganese
  Molybdenum
  Palladium
  Platinum
  .Sodium
  Tellurium
  Tin
  Titanium
  Vanadium
  Ittrium
  Lithium
  Phenols
  Total Organic Carbon
  Fluoride
                                      0.001
                                      0.053
                                      0.002
                                      0.172
                                     <0.005
                                     <0.05

                                      0.023
                                     <0,025
                                     <0.001
                                     <0.035
                                      1.5

                                     <0,025
                                     <0.002
                                     <0.001
                                     <0.003

                                      0.005
                                      2.0
                                      5.8
                                                     0.0007
                                                                   0.044
                                                                                   0.0078
                                                                                                  0.445
0.038
0.0014
0.12


0.017



0.038
0.006
0.499
0.124
<0.05
0.028
<0.025
0.002
<0.035
                                                                    3.24
0.0067
0.001
0.088


0.0049

0.0004

0.895
0.048
0.753
35
0.058
0.352
9.98
0.005
0.042
                                                                                               1030
                                                                                                                 0.287
                                                                                 0.74
                                                                                 0.0398
                                                                                 0.62

                                                                                 0.048

                                                                                 0.29

                                                                                 0.004
                                                                                 0,035




0.0036
1.44
4.18
<0.025
<0.002
<0.001
<0.003
0.006
109.0
0.17




0.001
19.1
0.03
0.027
0.005
0.006
<0.003
0.002
46.0
64.5
0.022
0.004
0.005

0.0017
38.12
53.46
CONVENTIONAL POLLUTANTS

  Oil & Grease
  Total Suspended Solids
  Biochemical Oxygen Demand
      1.2
      1.0
      1.4
                                                     0.86
                                                     0.72
                                                     1.01
 4.0
 5.0
15.0
0.70
0.88
2.6
 1.0
11.0
10.2
0.83
9.117
8.45

-------
                           TABLE 5-17
                      ELECTRONIC CRYSTALS
                 SUMMARY OF THE RAW WASTE DATAtt
Toxic prganics.
Parameter
8 1,2,4-Trichlorobenzene
11 1,1,1-trichloroethane
25 1,2-Dichlorobenzene
26 1,3-Dichlorobenzene
27 1.4-Dichlorobenzene
37 1,2-diphenylhydrazine
44 Methylene chloride
55 Naphthalene
68 Di-n-butyl phthalate
78 Anthracene
85 Tetrachloroethylene
87 Trichloroethylene
Plant 301
mg/1
ND**
0.170
ND
ND
ND
0.014
0.032
0.038
ND
0.015
ND
ND
Plant 380
mg/1
3.66
ND
132.6
1.96
52.6
ND
0.010
ND
0.046
ND
1.4
0.02
   TOTAL TOXIC ORGANICS
         0.269
ND - Not detected.
Toxic Metals

Antimony
Arsenic*
Beryllium
Cadmium
Chromium t
Copper t
Lead
Mercury
Nickel t
Selenium
Silver
Thallium
Zinc t

Conventional Pollutants
Min. Cone.
   mq/1

   <0.001
    1.75
   <0.001
   <0.005
    0.008
    0.024
    0.004
   <0.001
   <0.025
   <0.002
   <0.005
   <0.001
    0.040
Oil and Grease              8.0
Total Suspended Solids      7.0
Biochemical Oxygen Demand   4

Non-Convent j ona1 Pollutants

Fluoride                   28
Max. Cone.
   mq/1

    0.91
    3.03
    0.001
    0.040
    6.95
    7.92
    0.308
    0.001
    2.74
    0.129
    0.025
    0.050
    4.23
                 94
               2900
                 27
                378
              192.286
Mean Cone,
   mq/1

    0.122
    2.39
   <0.001
    0.009
    0.948
    1.23
    0.085
   <0.001
    0.454
    0.016
    0.005
    0.008
    0.654
                 31.5
                616
                 19
                129.7
 * This table shows the range of toxic organics observed.
** Not detected.
tt This table shows the range of toxic organic
   concentrations observed.
                             5-74

-------
                                             TABLB 5-18

                                 ELECTRONIC CRYSTALS PROCESS WASTES
                                             PLANT 301
Stream Description
Flow (I /hr)
Duration (hrs)
Sample ID Ho,
        TOXIC ORGASICS

          1 Acenaphthene
          4 Benzene
         11 1,1,1-Trichloroethane
         23 Chloroform
         37 1,2-Dlphenylhydrazine
         39 Fluoranthene
         44 Hethylene chloride
         48 Dlchlorobrofflomethane
         54 Isophorone
         55 Naphthalene
         59 Dinltrophenol
         60 Dinltro-o-cresol
         62 ť-Nltrosodlphenylťlne
Ui       64 Pentachlorophenol
 I        66 Bis(2-ethylhexyl)phthalate
^J       67 Butyl  benzyl phthalate
         68 Dl-N-butyl phthalate
         69 Di-N-octyl phthalate
         70 Dlethyl phthalate
         72 1,2 benzanthracene
         77 Acenaphthylene
         78 Anthracene
         80 Fluorene
         84 Pyrene
        100 Heptachlor
        Total  Toxic Organics

        TOXIC INORGANICS

        114 Antimony
        115 Arsenic
        117 Beryllium
        118 Cadmium
        119 chromium
        120 Copper
        122 Lead
        123 Hercury
        124 Nickel
        125 Selenium
          Effluent
            788
             24
           3469
Concentration    Mass Load
    mg/t           kg/day
                                     <0.01

                                      0.170
                                     <0.01
                                      0.014
                                     <0.01
                                      0.032B *
                                     <0.01

                                      0.038
                                     <0.01
                                     <0.01
                                     <0.01
                                     <0.01
                                     <0,01
                                     <0.01
                                     <0.01
                                      0.015
                                     
-------
                                              TWU8 5-18 {continued}

                                        fei-BCTROHIC CRYSTALS PROCESS WASTES
                                                    PUIHT 301
       Stresit Description
       Flow (I /hr)
       Duration (hrs)
       Saťple ID Ho.
       126 Silver
       127 Thallium
       128 Zinc
                                      Effluent
                                        788
                                         24
                                       3469
                            Concentration    Mass Load
                                Ťg/l           kg/day

                                  0,005 t
                                 <0.025
                                  0.643
                           Wafer Finishing Wastes
                                       8
                                      24
                                    3470
                         concentration    Mass Load
                             mg/l

                               0.006 ť
                              <0.025
                               0.091 *
       Total Toxic Inorganics

       HOH-COSVEOTIOHM. POLLUTWffS •
tn
 I
-J
Aluminum
Bariiaa
Boron
Calcium
Cobalt
Sold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic carbon
Fluoride
 0.482
 0,016
 0,650
30,764
 0.004

 1.092
 6.879
 0.021
 0.021
                                           258.244

                                             0.019
                                             0,010
                                             0.054
                                            <0.001
                                            <0-002
                                             2.6
                                            44
 0.115
 0.194
12.822
35.054
 0.125

29,230
12.029
 0.375
 0.023
                              91.694

                               0.068
                               0.002
                               0.083
                               0.014
                              <0.002
                            7600
                               3.3
       COHVBNTIOHM. POLLUTANTS

           Oil  & Grease                     94
           Total Suspended  Solids           36
           Biochemical Oxygen Demand        28
           pH                               9.6
                                                              20%
                                                              320
                                                               25
                                                                7.8
       t  Data not  transcribed  from analytical sheets at proposal.   (See note on page 5-6.)

-------
                                                         TABLE 5-19

                                             ELECTRONIC CRYSTALS PROCESS WASTES
                                                         PLANT 304
Stream Description
Flow (I /hr)
Duration (hrs)
Sample ID No.
  Influent to Treatment
          2.183
             24
           3841
Concentration    Mass Load
    mg/l           kg/day
  Wafer Finishing Wastes*+
            182
             24
           3842
Concentration    Mass Load
    mg/l           kg/day
        TOXIC OROANICS

          1 Acenaphthene
          4 Benzene
         10 1,2 Dlchloroethane
         11 1,1,1-Trlchloroethane
         14 1,1,2 Trichloroethane
         23 Chloroform
         29 1,1-Dlchloroethylene
         31 2,4-Dlchlorophenol
         44 Hethylene chloride
         55 Naphthalene
         56 Nitrobenzene
         68 Dl-n-butyl phthalate
         70 Dlethyl phthalate
ji       78 Anthracene (or phenanthrene)
I         85 Tetrachloroethylene
^j       86 Toluene
         87 Trlchloroethylene
        Total Toxic Organlcs

        TOXIC INORGANICS

        114 Antimony
        115 Arsenic
        117 Beryllium
        118 Cadmium
        119 Chromium
        120 Copper
        122 Lead
        123 Mercury
        124 Nickel
        125 Selenium
                                      1.400
                                     <0.01
                                     <0.01
                                      0.015
                                       (Rest of sample lost before It was analyzed)

                                      0.016

                                      1.431
                                      0.018 t
                                     <0.005 Ť
                                     <0.001
                                      0.013 *
                                      1.148
                                     18.981 *
                                      0.605
                                     <0.001
                                      6.065
                                     <0.005
                                    0.018
                                    0.074
                                    0.004
                                    0.060
                                    1.122
                                   34.947
                                   11.817
                                   <0.001
                                    0.972
                                   <0.005
 * Separate settling system; oil Is collected and contract hauled.
 t Organlcs were not analyzed.
 t Data not transcribed from analytical sheets at proposal.  (See note on page 5-6.)
*t Data Incorrectly transcribed at proposal.  (See note on page 5-6.)
                                                                                                              Effluent
                                                                                                              2,365
                                                                                                                 24
                                                                                                               3844
                                                                                                    Concentration    Mass Load
                                                                                                        mg/l           kg/day
                                                                 <0.01
                                                                 <0.01
                                                                  4.0 Ť
                                                                140.0 tHt
                                                                  0.085 ŤŤ
                                                                 <0.01
                                                                  2.2
                                                                 <0.01
                                                                  0.060
                                                                 <0.01
                                                                 <0.01
                                                                 <0.01
                                                                 <0.01
                                                                  0.014
                                                                  0.015
                                                                  0.025
                                                                 <0.01
                                                                146.399
                                    0.011
                                    0.023
                                   <0.001
                                    0.014
                                    0.516
                                    7.918
                                    0.308
                                   <0.001
                                    2.739
                                   <0.005

-------
                                                              5-19 (Continued)

                                                  BLSOfOHZC CRYSTALS PROCESS VASTtS
                                                              PUHT 304


      strew Description                Influent to TreaUwnt         Wafer Finishing tfaťtŤ                Effluent
      Flow (I /nr)                              2,183                           182                         2,367
      Duration (hrs)                               24                            24                            24
      Sa*plŤ 10 Ho.                              3641                          3842                          3844
                                      Concentration    Bass Load    concentration    Mass Load    Concentration    Bass Load
                                         •3/1          kg/day         mg/l           kg/day         ng/t           kg/day

      126 Silver                            0.034 *                       0.025 •                       0.025 •
      127 Thailiuw                         <0.050                       <0.050                        <0,050
      128 Zinc                              1.727                       32.960 f                       4.231

      Total Toxic inorganics

      HON-COHVEHTIOWU. POLLUTAHTS

          Aluminum                          4.381 •                      22.4 •                         2.141 •
          Barlura
          Boron                                                                                        0.855 •
          Calciua
          Cobalt                                                                                       0.682 •
          Bold                              0.050 t                                                     0.050 •
          Iron                             11.661 t                                                .    20.931 •
u,        HagnesliM
 I         Manganese
-4        Molybdenui
°°        Palladium
          Platlnua
          Sodium
          Tellurium
          Tin                               0.190 •
          Tltanlwi
          Vanadlui
          Yttrlun
          Phenols
          Xotal Organic Carbon,            460 •
          Fluoride                         30                             1.2                         120

      CONVENTIONAL POLLUTAHTS

          Oil & Grease                     41                         76%  •                          280 •
          Total Suspended solids         2000                          3400                         2900
          Eloctieialeai Oxygen Demand         3                           <3                            6
          pH                                S.3                           6.3                           5.9

       t Data not transcribed Croi analytical sheets at proposal,  (See note on page 5-6.)

-------
                                                tftBLB 5-20

                                    ELECTRONIC CRYSTALS PROCESS WASTES
                                                PLANT 380
       Stream Description
       Flow (I /hr)
       Duration (hrs)
       sample ID Ho.
                                           affluent
                                            658
                                             24
                                           ma-i
                                Concentration    Mass Load
                                    rag/I           kg/day
   Wafer Finishing Wastes
            227
             24
           me-2
concentration    Mass Load
    rag/It           kg/day
       TOXIC ORGAHICS
         8 1,2,4-Trlchlorobenzene
I
-J
                                      3.660
 10 1,2 Dlchloroethane
 11 1,1,1-Trlchloroethane
 13 1,1-Dlchloroethane
 25 1,2-Dlchlorobenzene             132.600
 26 1,3-Dlchlorobenzene               1.960
 27 1.4-Dlchlorobenzene              52.600
 44 Methylene chloride                0.010
 66 Bls(2-ethylhexyl) phthalate
 68 Di-n-butyl phthalate              0.046
 85 Tetrachloroethylene               1.400
 87 Trlchloroethylene                 0.020
Total Toxic Organlcs                192.286

TOXIC INORGANICS

114 Antimony                         <0.0005
115 Arsenic                          <0.005
117 Beryllium                        <0.005
118 Cadmium                           0.0003 •
119 Chromium                         <0.025
120 Copper                            0.185
122 Lead                              0.002 •
123 Mercury                          <0.001
124 Nlchel                           <0.025
125 Selenium                         <0.005
                                                                           0.400
                                                                           0.320
                                                                           0.005
                                                                           1.440
                                                                           0.014
                                                                           0.049
                                                                           0.026
                                                                           O.OT?
                                                                           0.010
                                                                           0.040

                                                                           2.366
                                                                          <0.0005
                                                                          <0.005
                                                                          <0.005
                                                                           0.0013 I
                                                                          <0.025
                                                                          <0.005
                                                                           0.026 •
                                                                          <0.001
                                                                          <0.025
                                                                          <0.005
        • Data not transcribed from analytical sheets at proposal,  (see note on page 5-6.)

-------
                                          TRSUt 5-20 (Continued)

                                    BtECTROHIC CRYSTALS PROCESS UASTSS
                                                PLANT 380


       Stream Description                         Effluent             Wafer Finishing Wastes
       Flow (I /hr)                                658                          227
       Duration (hrs)                               24                           24
       Sample ID Ho.                              H18-1                        H18-2
                                       Concentration   Hass Load   concentration    Mass Load
                                           •g/t           kg/day         Ťg/l           kg/day

       126 Silver                           <0.015                       <0.015
       127 Thallium                          0.038 •                       0,0025 •
       120 zinc                              0,038 •          .             0.041 •

       Total Toxic Inorganics

       NOH-CONVEHf lONRL FOLUJTWnS f

           Aluminum
           Barium
           Boron
           Calcium
           cobalt
           Gold
           Iron
W         Magnesium
^         Manganese
o         Molybdenum
           Palladium
           Platinum
           sodium
           Tellurium
           Tin
           Titanium
           Vanadium
           Yttrium
           Phenols                                                         0.103
           Total Organic Carbon              5.4                          47 •*
           Fluoride

       CONVENTIONAL POLLUTANTS

           Oil & Grease                      8.4                           9.6
           Total Suspandas! Solids            1.2                         577
           Biochemical Oxygen Demand          —                          26
           pH                                3.0                           7.6


        • Data not transcribed from analytical sheets at proposal.  (See note on page  5-6.)
       8* Data incorrectly transcribed at proposal.  (See note on page 5-6.)
        f non-toxic BetaIs were not analyzed.

-------
                                                                                TABLE 5-21

                                                                     ELECTRONIC CRYSTALS PROCESS WASTES
                                                                                PUNT 401
       StreaŤ Description
       Flow 
-------
                                                                              5-21  (Continued)
                                                                   IlECfROHIC OfifSWiS WKJCSSS Vf&TBS
                                                                                     401
Ul
 I
CO
to
     Streaa Description
     Flow (I /hr)
     Duration (hrs)
     Sample ID Ho.
toxic IMORGRNICS (Continued)

126 Silver
127 Thalllua
128 Zinc

Total Toxic Inorganics

NOH-CONVBHTIOHM. POLUJTRHTS

    Aluminum
    Barium
    Boron
    Calcium
    Cobalt
    Gold
    Iron
    Magnesium
    Manganese
    Molybdenum
    Palladium
    Platinum
    Sodium
    Tellurium
    Gallium
    oadolnlum
    Lithium
    Phenols
    Total Organic Carbon
    fluoride

eONVENTIONBL POLLUTANTS

    Oil & Grease
    Total Suspended Solids
    Biochemical Oxygen Demand
                                      Scrubber Vastest
                                           681
                                             24
                                           3799
                                concentration    Mass Load
                                    ťg/l           kg/day
                                          <0.006
                                          <0.050
                                           0.058 I
                                          <0.02
                                           1.65 t
                                           1.4 •
                                           0.02 *
                                          <0.002
                                           9.3
                                           0.6
                                           0.4
        Acid Wastes
            3.80
             24
           3800
Concentration    Mass Load
    mg/l           kg/day
      0.006
     <0.050
      0.076 t
     <0.02
      3.4 *
      2.8 •
      0.04 •
     <0.002
     56
     33
                                                                       110
  Wafer Finishing Wastes*
           0.80
             24
           3801
Concentration    Mass Load
    ťg/i           kg/day
     <0.050
     <0.050
      0.777
  Wafer Finishing wastes*
           1.75
             24
           3802
Concentration    Mass Load
    Ťg/t           kg/day
     <0.005
     <0.030
      0.023 f
     12 *
     10 5
      5 t
      0.09 •
      0.7
                                                                                                     990
                                                                                                    1200
     <0.02
     <6
     45 •
      4.8 •
                                    0.8
                                                                 14
                                                               2100
      * stream is contract hauled.
      § Data not transcribed from analytical sheets at proposal.
                                                             (See note on page 5-6.)

-------
                                             TABLE 5-22

                                 ELECTRONIC CRYSTALS PROCESS WASTES
                                             PLANT 402


Stream Description                      LCD Effluent              Equipment cleaning
Flow (t /he)                               6308                          946
Duration (hrs)                               24                           24
Sample ID No.                              3938                          383?
                                concentration    Mass Load    Concentration    Mass Load
                                    mg/*           leg/day         mg/l   .        kg/day

tOXIC ORGftHICS •

  4 Benzene                          <0.01                         <0.01
 11 1,1,1-Trlehloroethane                                          <0.01
 23 Chloroform                       <0.01                         <0.01
 26 1,3-Olchlorobenzena                                            <0.01
 37 1,2-Dlphenylhydrazlne
 38 Ethylbenzene                                                   <0.01
 39 Pluoranthene
 44 Hethylene chloride               <0.01                         <0.01
 48 Dichlorobromomethane
 54 Isophorone
 59 Dlnltrophenol
 60 Dlnltro-o-cresol
 62 N-Hltrosodlphenylamine
 64 Pentachlorophenol
 65 Phenol                                                         <0.01
 66 8ls(2-ethylhexyl)phthalate                                     <0.01
 6? Butyl benzyl phthalate                                         <0.01
 68 Dl-M-butyl phthalate                                           <0.01
 69 Dl-H-octyl phthalate
 70 Dlethyl phthalate                                              <0.01
 77 Acenaphthylene
 78 Anthracene
 80 Pluorene
 86 Toluene                                                        <0.01
 87 Trlchloroethylene                  <0.01                       <0,01
 96 Beta-endosulfan                                                <0.01
100 Heptachlor
Total Toxic Organlcs

TOXIC INORGAMICS •

114 Antimony                          0.042                         0.045
115 Arsenic                          <0.005                        <0.005
117 Beryllium                        <0.001                        <0.001
118 cadmium                           0.002                         0.005
119 Chromium                          0.017                         0.052
120 Copper                            0.024                         0.048
122 Lead                              0.044                         0.105
123 Mercury                          <0.001                        <0.001
124 Hlckel                            0.087                         0.304
125 selenium                         <0.005                        <0.005


 • Data not transcribed from analytical sheets at proposal.   (See note on page 5-6.)

-------
                                             TABLE 5-22 (Continued)

                                       ELECTRONIC CRYSTALS PROCESS WASTES
                                                   PLANT 402


      strew* Description                      LCD Effluent              Equipment Cleaning
      Flow (t /hr)                               6308                           946
      Duration (hrs)                               24                            24
      Sanple ID No.                              3838                          3837
                                      Concentration    Mass Load    Concentration    Mass Load
                                          •g/l           kg/day         ťg/i           kg/day

      126 Sliver                           <0.006                         0.017
      127 Thallium                         <0.05                          0.070
      128 Zinc                              0.048                         0.184

      Total Toxic Inorganics

      NON-CONVENTIONAL POLLUTANTS *

          Aluminum                          0.081                         0.290
          Barium                            0.019                         0.093
          Boron                             0.052                         0.098
          Calcium                          21.33                         89.326
          Cobalt                            0.006                         0.018
          Gold
          iron                              0.122                         0.408
u,        Magnesium                        21.69                         65.300
 I         Manganese                         0.009                          .033
00        Molybdenum                        0.014                         0.041
**        Palladium
          Platinum
          Sodium                           83.038                       757.776
          Tellurium
          Tin                               0.074                         0.104
          Titanium                          0.003                         0.007
          Indium                            0.6
          Phenols                          <0.002                        <0.002
          Vanadium                          0.165                         0.482
          Xttrlum                           0.002                         0.019
          Total Organic Carbon            820                            58
          Fluoride                          1.2                           1.2

      CONVENTIONAL POLLUTANTS

          Oil & Grease                      9.8                           5.1
          Total Suspended Solids
          Biochemical Oxygen Demand
          PH


       f Data not  transcribed from analytical sheets at proposal.   (See note on page 5-6.)

-------
                                                                          TABLB 5-23

                                                              ELECTRONIC CRYSTALS PROCESS WASTES
                                                                          PLANT 403


stream Description           Wafer Finishing and Acid Vastest   Wafer Finishing Hastes        Wafer Finishing Wastes        Wafer Finishing Wastes
Flow (I /hr)                                61.92                         4.73                         4.73                            2,37
Duration (hrs)                              24                            24                            24                            24
Sample ID No.                             3834-1                        3834-2                        3834-3                        3834-4
                                Concentration    Mass Load    Concentration    Mass toad    Concentration    Mass Load    concentration    Mass Load
                                    mg/l           kf/day         Bg/l           kg/day         rag/I           kg/day         mg/l    •       kg/day

TOXIC ORGAHICS

  4 Benzene                          <0.01                           HA                            HA                            HA
  6 Carbon tetrachloride             <0.01                           HA                            NA                            HA
 11 1,1,1-Trlchloroethane            <0.01                           HA                            HA                            HR
 13 1.1-Dlchloroethane               <0,01                           HA                            NA                            NA
 23 Chloroform            "            0.040                          HA                            NA                            HA
 38 Bthylbenzene                     <0,01                           HA                            NA                            HA
 44 Hethylene chloride                0.050                          NA   ,                         HA                            HA
 66 Bis(2-ethylhexyl)phthalate       <0.01                           HA                            HA                            NA
 70 Dlethyl phthalate                <0.01                           HA                            HA                            HA
 86 Toluene                           0.010                          NA                            HA                            HA
 87 frlchloroethylene                <0.01                           HA                            NA                            HA
Total loxlc Organlcs                  0.09

TOXIC IHORGANICS

H4 Antimony                         65.0 •                         1.180                       187.5**                        <0.050
115 Arsenic                           0.0179 i                      0.270                         0.034                         0.225
117 Beryllium                         0.001 *                        HA                            HA                            HA
118 Cadmium                           0.002 Ť                        BB                            HA                            HR
119 Chromium                          0.014 I                        HA                            HA                            NA
120 Copper                            0.143                          NA                            HA                            NR
122 Lead                              0.035 t                        HA                            HA       ,                    NA
123 Mercury                           0.001 t                        NA                            NA       '                    HA
124 Nickel                            0.114                          HA                            HA                            HA
125 selenium                          0.129                          NA                            NR                            NA


** The high levels of antimony occur In the slicing machine coolant,  which Is  reclrculated,  and  then hauled for disposal.
 t Composite of streams -2,  -3, -4,  -5, -6.
 • Data not transcribed from analytical sheets at proposal.  (See not* on page 5-6.)

-------
                                                                        TABLE 5-23 (Continued)

                                                                  ELECTRONIC CRYSTALS PROCESS WASTES
                                                                              PLANT 403
    Stream Description
    Plow (I /hr)
    Duration (hrs)
    Sample ID Ho.
                             wafer Finishing and Acid Vastest   Wafer  Finishing Wastes
                                            61.92                         4.13
                                            24                            24
                                          3834-1                        3834-2
                                concentration    Kass Load    Concentration    Haas Load
                                    mg/l           kg/day         mg/l          kg/day
    TOXIC iHORSftNlcs (Continued)

    126 Silver                           <0.006
    12? fhalliun                         <0.050
    120 Zinc                              0.060
                                                                     NA
                                                                     HA
                                                                     NA
                                                        Wafer  Finishing Wastes
                                                                 4.73
                                                                  24
                                                                 3834-3
                                                      concentration    Mass Load
                                                          mg/l          kg/day
                                                             NA
                                                             NA
                                                             HA
                                                       Wafer Finishing Wastes
                                                                  2.37
                                                                 24
                                                               3834-4
                                                     Concentration    Mass Load
                                                         mg/t,           kg/day
                                                            HA
                                                            NA
                                                            NA
in
 I
CO
Total Toxic Inorganics

HOH-CONVENTIONAL POLLUTANTS

    Aluminum
    Barium
    Boron
    Calcium
    Cobalt
    Gold
    Iron
    Magnesium
    Manganese
    Molybdenum
    Palladium
    Platinum
    Sodium
    Bismuth
    Indium
    Tellurium
    Tin
    Titanium
    Vanadium
    Xttrium

    total organic carbon
    Fluoride
 0.490
 0.023
 6.724
25.550
 0.001

 0.124
 5.886
 0.021
 0.022
                                         28.635
                                          0.171
                                          0.006
                                          0.058
                                          0.001

                                         440
 NA
 NA
 HA
 HA
 NA
 HA
 NA
 NA
 HA
 HA
 NA
 NA
 NA
0.360
0.570
3.200
 NA
 NA
 HA
 HA
                                                                        0.4
  HA
  NA
  HA
  NA
  HA
  NA
  HA
  NA
  NA
  NA
  HA
  NA
  NA
 0.230
 0.720
17.70
  NA
  NA
  NA
  HA
                                                                                                      0.9
 NA
 NA
 NA
 NA
 NA
 HA
 NA
 HA
 HA
 HA
 NA
 NA
 NA
0.030
9.0
0.120
 NA
 NA
 NA
 NA
                                                                                                                                    0.3
     CONVENTIONAL POLLUTANTS

         Oil & Grease
         Total Suspended Solids
         Biochemical Oxygen Demand
         PH
                                                                   12
                                                                   14

                                                                    7.5
                                                           160
                                                           400
                                                             8.8
                                                           27
                                                           49

                                                            6.7
      t Composite of streams -2,  -3,  -4.  -5.  -6

-------
                                        TABLE 5-23 (Continued)

                                 ELECTRONIC CRYSTALS PROCESS WASTES
                                             PLANT 403


Stream Description                Wafer Finishing Wastes              Acid Wastes
Flow (I /hr)                               2.37                          47.32
Duration (hrs)                               24                            24
Sample ID Ho.                             3834-5                        3834-6
                                Concentration    Mass Load    Concentration    Mass Load
                                    •g/l           kg/day         rag/I           kg/day

TOXIC ORGANICS

  4 Benzene                            HA                            HA
  6 Carbon tetrachloride               NA                            HA
 11 1,1,1-Trichloroethane              HA                            NA
 13 1.1-Dichloroethane                 HA                            NA
 23 Chloroform                         HA                            NA
 38 Bthylbenzene                       HA                            NA
 44 Methylene chloride                 HA                            NA
 66 Bis(2-ethylhexyl)phthalate         HA                            NA
 70 Dlethyl phthalate                  HA                            HA
 86 Toluene                            HA                            NA
 87 Trlchloroethylene                  NA                            HA
Total Toxic Organlcs

TOXIC INORGANICS

114 Antimony                          3.3                          <0.080
115 Arsenic                           0.112                         0.325
117 Beryllium                          NA                            NA
118 Cedralua                            Hft                            NA
119 Chromium                           HA                            HA
120 Copper                             HA                            HA
122 Lead                               NA                            NA
123 Mercury                            NA                            HA
124 Hlckel                             HA                            NA
125 Selenium                           HA                            HA

-------
                                           TABIE 5-23 {Continued)

                                     BtSCtROHIC CRYSTALS PRCCSSS VXSfSB
                                                 PLANT 403


    Stream Description                Wafer Finishing Wastes              Acid Wastes
    Flow (I /hr>                                2.31                          47,32
    Duration  (hrs)                                24                            24
    Sample ID HO.                              3934-5                        3834-6
                                    Concentration    ness  Load    concentration    tfass Load
                                                       kg/day         mg/1           kg/day
    126 Silver                              HA                            HA
    121 Thallium                           HA                            HA
    128 Zinc                               HA                            HA

    Total Toxic Inorganics                 HA                            HA

    NOM-COHVEHTIOMAL POLLUTANTS

        Aluminum                           HA                            HA
        Barium                              HA                            HA
        Boron                              HA                            HA
        Calcium                            HA                            HA
        Cobalt                              HA                            HA
        Gold                               HA                            HA
        Iron                               MA                            HA
        Magnesium                          HA                            HA
W      Manganese                          HA                            HA
 '       Molybdenum                         HA                            Hft
00      Palladium                          HA                            HA
        Platinum                           HA                            HA
        Sodium                              HA                            HA
        Tin                                Hft                            HA
        EJismouth                          0.020                         0.040
        Indium                             0.340                         O.S10
        Tellurium                         0.120                         0.110
        Total Organic Carbon
        Fluoride                          0.6                          36

    CONVKWMONM. POLLUTANTS

        Oil Ť. Grease                     SO                            12
        Total Suspended Solids           18                             4.0
        Biochemical Oxygen DeaajiO
        pH                                7.4                           3.0

-------
                                                              ELECTRONIC CRYSTALS PROCESS WASTES
                                                                          PLANT 404


Stream Description                Ga*s Crystal Effluent                Reid Wastes**                Wafer Slicing**             Scrubber Wastes
Flow (i /hr>                              20500                            56.7                        157.7                         850
Duration (hrs)                               24                            24                            24                            24
Sample ID Mo.                              3729                          3730                          3731                          3732
                                Concentration    Mass Load    Concentration    Mass Load    Concentration    Mass Load    Concentration    Mass Load
                                    mg/1           kg/day         mg/l           kg/day         mg/t           kg/day         Ťg/l           kg/day

TOXIC ORGRNICS

  4 Benzene
  6 Carbon tetrachlorlde                                                                          0.031
  7 Chlorobenzene                                                                                <0.01
  8 1,2.4-Trlchlorobenzene
 11 1,1.1-lrlchloroethane             0.238                         0.458
 23 Chloroforml                                                     0.013                         0.168                        <0.01
 24 2-Chlorophenol                                                 <0,01
 25 1,2-Dichlorobenzene
 29 1,1-Dlchloroethylene              0.039
 30 1.2-Trans-dichloroethylene       <0.01
 31 2,4-Dlchlorophenol                                             <0.01                                                       <0.01
 44 Methylene chloride                0.126                         0.026                         0.038                         0.054
 45 Methyl chloride                                                <0.01                         <0.01                         <0.01          '
 57 2-Mitrophenoi                                                                                                                            j;
 58 4-Hltrophenol                                                                                                                            •'•'••
 65 Phenol                                                         <0.01                                                       <0.01
 66 Bls(2-othylhexyl)phthalate
 67 Butyl benzyl phthalate            0.031
 68 Dl-H-butyl phthalate             <0.01                         <0.01                         <0.01                         <0.01
 70 Dlethyl phthalate                <0.01                                                                                     <0.01
 85 Tetrachloroethylene              <0.01                          0.011
 86 Toluene                          <0.01                         <0.01
 87 Trtchloroethylene                 3.100                         1.700                        <0.01                          0.660
121 Cyanide*                          0.017                         0.013                        <0.004                        <0.004
Total Toxic organlcs                  3.534                         2.208                         0.237                         0.714

TOXIC IHORQflNICS
                                                                                                                                              }
114 antimony                          0.003 t                       0.100                         0.260                         0.001 •
115 ftrsenlc                           3.03                         62.500                        80.300                         0.043 i
117 Beryllium                        <0.010                         0.010 t                      <0.010                        <0.010
118 Cadmium                           0.040 f                       0.002 *                       0.005 t                      <0.010
119 Chromium                          0.030 •                       6.060                         0.720                         0.030 Ť
120 Copper                            0.040 i                       2.200                         2.300                         0.020 t
122 Lead                              0.040 t                       0.040 •                       0.065 f                       0.030 f
123 Mercury                           0.001                         0.009 •                       0.010 t                       0.001 •
124 Sickel                            0.100                         0.120                         0.120                         0.110
125 Selenlun                         <0.005                         0.006 •                       0.100 t                      <0.005 t

 * Hot Included In TTO sumatlon,
** Waste contract hauled.
 • Data not transcribed fro* analytical sheets at proposal.  (See note on page 5-6.)

-------
                                                                    TABLE 5-24 (Continued}

                                                              ELBCTROHIC CWfSatS PROCESS
                                                                          PUNT 404


Strea* Description                OoKs Crystal SEtluent                Acid Vastts * *              Wafer slicing * *           Scrubber wastes
Flow U /hr)                              20500                            56.7                        157.7                         850
Duration (hrs)                               24                            24                            24                            24
Sample ID Ťo.                              3729                          3730                          3731                          3732
                                Concentration    Mass Load    Concentration    Mass Load    Concentration    Mas* Load    Concentration    Hass Load
                                    ng/l           kg/day         iig/l           kg/day         *g/t           kg/day         Ťg/l           kg/day

toxic INORGANICS (continued}

126 Sliver                           <0.006                         0.003 •                       0.010 •                       0.012 t
127 Thallium                         <0.050                         0.016 •                       0.0^0 Ť                      <0.050
128 Zinc                             <0.090                         0.060 •                       0.030 •                       0.040 •

Total Toxic inorganics                0.057          0.007          2.076          0.0014         0.165          0.0086         5.866         65.25

HOW-CONVENTIONAL POLLUTANTS t

    ftlunlnua                          0.19                                                                                      0.29
    Barium                            0.01                                                      ,                                0.01
    Boron                            21.38                                                                                      0.27
    Calcium                           7.29                                                                                      9.31
    Cobalt                                                                                                                     <0.01
    SoW                             <0.05                          0.020                         0.050                        <0.05
    Iron                              0.23                                                                                      0.24
    Magnesium                         0.92                                                                                      1.27
    Manganese                        <0.01                          0.130                         0.032                        <0,01
    Molybdenum                        0.13                         <0.010                        <0.010                         0.09
    Palladium                        <0.025                         0.022                         0.063                        <0.025
    Platinum                         <0.03                         <0.200                        <0.200                        <0.030
    Sodium                           56.91                                                                                     10.24
    tellurium                        <0.02                          0.830                         1.160                        <0.02
    Tin                               0.03                                                                                     <0.01
    Titanium                         <0.01                          0.100                         0.031                        <0.01
 —Tungsten                  	   •   •-•                      ^
-------
                                                   TABLE 5-24 (Continued)

                                             ELECTRONIC CRYSTALS PROCESS WASTES
                                                         PLANT 404
Stream Description
Plow (I /hr)
Duration (hrs)
Sample ID Ho.
TOXIC OKGAHICS

  4 Benzene
  6 Carbon tatrnchlorlde
  7 Chlorobenzeno
  81,2,4~TrIchlorobenzene
 11 1,1,1-Trlchloroethane
 23 Chloroform
 24 2~Chlorophenol
 25 1,2-Dlchlorobenzene
 29 lťl-Dichloroethylene
 30 1,2-lrans-dlehloroethylene
 31 2,4-Blchlorophenol
 44 Hethylene chloride
 45 Hethyl chloride
 57 2-Nltrophenol
 58 4-Nltrophenol
 65 Phenol
 66 Bls(2-ethylhexyl)phthalate
 67 Butyl benzyl phthalate
 68 Dl-N-butyl phthalate
 70 Diethyl phthalate
 85 Tetrachloroethylene
 86 Toluene
 87 Trichloroethylene
121 cyanide*
Total Toxic Organlcs

TOXIC INORGANICS
       Scrubber Hastes •
            863
             24
           3733
Concentration    Mass Load
                   kg/day
     <0.0l

      0.021
     <0.01
      0.042

      0.024
      0.014
      2.500
     <0.01

      0.023
     <0.01
     <0.01

      0.407
     <0.004
      3.031
      Scrubber Hastes •
            863
             24
           3734
Concentration    Mass Load
    Ťf/t      •     kg/day
     <0.01

     <0.01

      0.013
     <0.01
     <0.01
      0.021
      0.012
      0.060
     <0.01
      0.170
     <0.01

      0.023
     <0.01
      0.021

      0.880
      0.026
      1.20
 Semiconductor Effluent •
           45740
             24
           3735
Concentration    Mass Load
    rag/t           kg/day
     <0.01


      0.054



     <0.01

      0.017

      0.034

      0.380
      0.021

     <0.01
     <0.01
      0.105

      2.700
      0.006
      3.311
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Hercury
124 Nickel
125 Selenium
      0.005
      0.097
      0.001
      0.009
      0.088
      0.048
      0.090
     <0.001
      0,217
     <0.005
* Hot Included In TTO summation.
f Data not transcribed from analytical sheets at proposal.
      0.001
      0.083
     <0.010
     <0.010
      0.130
      0.030
      0.020
     <0.001
      0.080
      0.005
                            (See note on page 5-6.)
      0.001
      0.089
     <0.010
     <0.010
      0.140
      0.030
      0.040
     <0.001
      0.120
      0.020

-------
                                                        TABLE 5-24 (Continued;

                                                  ELECTRONIC CRYSTALS PROCESS WASTES
                                                              PLANT 404
Ui
 I
10
N)
     StreaM Description
     Flow It, /hr>
     Duration (Itrs)
     sample ID Wo.
126 sliver
127 Thallium
128 Zinc

Total Toxic Inorganics

HOW-CONVBHTIONftL POLLUTANTS

    AlUfllnusR
    Barium
    Boron
    Calcium
    Cobalt
    Gold
    Iron
    Magnesium
    Manganese
    Molybdenum
    Palladium
    Platinum
    Sodium
    Tellurium
    Tin
    Titanium
    Vanadium
    .yttrium
    Phenols
    Total Organic Carbon
    Fluoride

CONVENTIONAL POLLUTANTS
       Scrubber Wastes *
            863
             24
           3733
Concentration    Mass Load
    •9/1           kg/day

     <0.004
     <0.030
      0.083
      0.477
      0.015
      0.14
     10.371
      0.011
     <0.02
      0.194
      1.439
      0.01
      0.028
     <0.08
     <0,05
     13.224
     <0.02
      0.039
      0.007
      0.029
      0.023
      3.1
     47
      9.1
      Scrubber Wastes •
            863
             24
           3734
Concentration    Mass Load
    mg/l           kg/day

     <0.006
     <0.050
      0.050
      1,52
      0.01
      0.13
     10.36
     <0.01
     <0.05
      0.27
      1.31
      0.01
      0.07
     <0.025
     <0.03
     16.43
     <0.02
      0.01
     <0.01
      0.04
     <0.01
      0.13
     21
     17
 Semiconductor Effluent •
           45740
             24
           3735
Concentration    Mass Load
    Ťg/l           leg/day

     <0.006
     <0.050
      0.140
      0.49
      0.01
      0.13
      9,61
     <0.01
     <0.05
      0.2
      1.25
     <0.01
      0.06
     <0.025
     <0,03
     15.3
     <0.02
      0.01
      0.01
       .02
       ,01
                                                                                                       0.
                                                                                                       0.
                                                                                                       0.13
                                                                                                      38
                                                                                                       7.7
         Oil & Grease                      0.1
         Total Suspended Solids            4.0
         Biochemical Oxygen Demand        <3.0
         pH                                3.3
                                                                    0.9
                                                                    2.0
                                                                   <3
                                                                    2.4
                                                                  1.1
                                                                  3.5
                                                                 <3
                                                                  6.3
     t Data not transcribed from analytical sheets at proposal.  (See note on page 5-6.)

-------
                                                                             TABU! 5-25

                                                                 ELECTRONIC CRYSTALS PROCESS VASTBS
                                                                             PLAKT 405


    stress Description                Influent  to Treatment        silicon Crystal affluent       Gate crystals effluent                Effluent
    Flow (& /hr)                              1135                          1135                          42250                         70958
    Duration (hrs)                              24                            24                            24                            24
    Sample ID Bo.                               4033                         ' 4035                          4038                          4036
                                   Concentration   Mass Load    Concentration •   Mass Load    Concentration    Mass Load    Concentration    Mass Load
                                       ag/S           kg/da?         ng/t           kg/day         mg/l           kg/day         mg/l           kg/day

    tOXIC ORGMIICS

      4 Benzene                           KR                            HA                          <0.01
     23 Chloroform                         Nft                            Hft                          <0.01
     24 2-Chlorophenol                    1Ž                            HA                           0.029 Ť
     27 1,4-Dlchlorobenzene               HA                            HA                           0.086 8                       0.081
     30 1,2-trans-dlchloroetbylene        HA                            HA                          <0.01
     44 Hethylene chloride                HA                            NA                           0.620 8                       0.490
     55 Naphthalene                       NA                            NA                          <0.01
     57 2-Nltrophenol                      HA                            NA                           1.200 *
     58 4-Hltrophenol                      HR                            Hft                           0.065 #
     65 Phenol                            NA                            HA                           0.480 8
     66 Bls(2-ethylhexyl)phthalate        HA                            MB                          <0.01
     68 Dl-H-butyl  phthalate              HA                            HA                          <0,01                         <0.0i
     69 Di-H-octyl  phthalate              HA                            HA                                                         0.180
U,   70 Dlethyl phthalate                 HA                            HA                          <0.01                          0.025
 I    78 Anthracene                         HA                            Hft                .          <0.01                         <0.0l
vo   80 Fluorene                           HA                            HA             _             <0.01                         <0.01
w   81 Phenanthrene                      HA                            Nft                          <0.01                         <0.01
     85 Tetrachloroethylene               HA                            HA           .                0.120 •
     86 Toluene                           HA                            Hft                           0.023 *                       0.020
     87 Trlchloroethylene                 HA                            HA                           3.800 f     '                  0.110
    121 Cyanide*                           HA                            HA                          <0.002                        <0.002
    Total Toxic Organlcs                  HA                            Hft                           6.423                         0.905

    TOXIC IHORGAHICS

    114 Antimony                          0.150                        0.019 f                       0.002 •                       0.002 t
    115 Arsenic                         <0.002                        0.200                         1.80                          0.180
    117 Beryllium                        <0.005                       <0.005                        <0.005                        <0.005
    118 Cadmium                          0.005 f                      0.006 i                      <0.005                        <0.005
    119 Chromium                        251                            54.3                           0.401                         0.070 ť
    120 Copper                           0.139 •                      0.275 *                       0.058 •                       0.012 Ť
    122 Lead                             0.153                        0.069 •             '         <0,050                        <0.050
    123 Mercury                         <0.00i                       <0.001                        <0.001                        <0.001
    124 Hlckel                           2.580                        0.327                         0.314                         0.084 •
    125 Selenium                         <Ť.002                       <0.050                        <0.002                        <0.002

    * Not Include In TTO summation,
    tt Data not transcribed from analytical sheets at proposal.  (See note on page  5-6.)

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                                                                         TABLE 5-25 (Continued)

                                                                   ELECTRONIC CRYSTALS PROCESS  WASTES
                                                                               PLANT  405


     stream Description                Influent to Treatťent        Silicon Crystal Effluent       GaAs Crystals  Effluent                Effluent
     Plow (I /hr)                              1135                          1135                           42250                         70958
     Duration (hrs)                              24                            24                             24                            24
     Sample ID Ho.                              4033                          4035                           4038                          4036
                                     concentration    Mass Load    concentration   Hass  Load    concentration   Mass Load    concentration    Mass Load
                                         ťg/l           kg/day         mg/t          kg/day          ng/i,           fcg/day         mg/l           kg/day

     TOXIC INORGANICS (Continued)

     126 Silver                            0.002 f                       0.003 *                      0.002 *                      <0.001
     127 Thalllua                         <0.001                        <0.025                        <0.001                         0.002 t
     128 Zinc                              0.668                         0.628                  •      0.107                         0.048 ť

     Total Toxic Inorganics

     NON-CONVBNTIOHAL POLLUTANTS

         Aluminum                           m.                            im                           NA                            HA
         Barium                             NA                            NA                           NA                            NA
         Boron                              NA                            NA -                     •     NA                            NA
         Calcium                            NA                            NA                           NA                            NA
         Cobalt                             NA                            NA                           NA                            NA
         Gold                               NA                            NA                           NA                            NA
         Iron                               NA                            NA                           NA                            NA
<-"       Magnesium                          NA                            NA                           NA                            HA
A.       Manganese                          NA                            NA                           NA                            NA
4^       Molybdenum                         NA                            NA                           NA                            NA
         Palladium                          NA                         .   NA                           NA                            MA
         Platinum                           NA                            NA                           NA                            HA
         Sodium                             NA                            NA                           NA                            NA
         Tellurium                          NA                            NA                           NA                            NA
         Tin                                NA                            HA                           NA                            NA
         Titanium                           NA                            NA                           NA                            NA	- •
         vanadium                           HA                   -        m                           m                            m
         Yttrium                            NA                            KK                           NA                            NA
         Lithium                            NA                            NA                           HA                            NA
         Phenols                            HA                            m                           0.10                         <0.01
         Total Organic Carbon               NA                            NA                         160                             40
         Fluoride                     10.400                             2.1                          66                             20

     CONVENTIONAL POLLUTANTS

         Oil 6 Grease                                                                                 52                            28
         Total Suspended Solids          1550                          2700                           560                            60
         Biochemical oxygen Demand
         pH

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                              SECTION 6
            SUBCATEGORIES AND POLLUTANTS TO BE REGULATED.
                         EXCLUDED OR DEFERRED
This section cites the E&EC subcategories which are being (1)
regulated or (2) excluded from regulation.  In addition,  this
section explains, for those subcategories being regulated,  which
pollutants are being regulated and which pollutants are being
excluded from regulation.

6.1  SUBCATEGORIES TO BE REGULATED

Based on wastewater characteristics presented in Section 5. dis-
charge effluent regulations are being proposed for the Semiconductor
and the Electronic.Crystals subcategories.
                  <***s
6.1.1  Pollutants To Be Regulated

The specific pollutants selected for regulation in these
subcategories are.pH, total suspended solids, fluoride, total toxic
organics. and arsenic.  Arsenic is to be regulated only in the
Electronic Crystals subcategory and only at facilities that produce
gallium arsenide or indium arsenide crystals.  Total suspended
solids are also only to be regulated in the Electronic Crystals
subcategory.  The rationale for regulating these pollutants is
presented below.

(PH) Acidity or Alkalinity

During semiconductor manufacture, alkaline wastes result from
alkaline cleaning solutions; and during electronic crystal
manufacture, alkaline wastes result from the use of hydroxides and
carbonates from crystal growth and cleaning and rinsing operations.
Acid wastes occur in both subcategories from the use of acids for
cleaning and etching operations.  The pH in the raw waste can range
from 1.1 to 11.9 from these operations.

Although not a specific pollutant, pH is a measure of acidity or
alkalinity of a wastewater stream.  The term pH is used to describe
the hydronium ion balance in water.  Technically, pH is the negative
logarithm of the hydrogen ion concentration.  A pH of 7 indicates
neutrality, a balance between free hydrogen and free hydroxyl ions.
A pH above 7 indicates that the solution is alkaline, while a pH
below 7 indicates that the solution is acidic.
                                 6-1

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Waters with a  pH  below  6.0 are corrosive to water works structures.
distribution lines, and household plumbing fixtures and such
corrosion  can  add constituents to drinking water such as iron,
copper,  zinc,  cadmium,  and lead.  Low pH waters not only tend to
dissolve metals from  structures and fixtures, but also tend to
redissolye or  leach metals from sludges and bottom sediments.
Waters with a  pH  above  9.9 can corrode certain metals, are
detrimental to most natural organic materials, and are toxic to
living organisms.

Total Suspended Solids

Suspended  solids  are  found in wastewaters from electronic crystals
manufacturers  at  an average concentration of  616 milligrams per
liter.   Suspended solids  result from slicing, lapping, and grinding
operations performed  on the crystal.  Some; abrasives used for these
operations may also enter the wastewaters.

Suspended  solids  increase the turbidity of water, reduce light
penetration, and  impair the photosynthetic! activity of aquatic
plants.  Solids,  when transformed to sludge deposit, may blanket the
stream or  lake bed and  destroy the living spaces for those benthic
organisms  that would  otherwise occupy the habitat.
                                          !
Fluoride

Hydrofluoric acid  is  commonly used as an etchant in providing proper
surface  texture for application of other materials and creating
depressions for dopants in device manufacture.  Fluoride
concentrations have been observed as high as  147 milligrams per
liter in raw wastes from semiconductor manufacture, and as high as
378 milligrams per liter in raw wastes from electronic crystals
manufacture.                              ;

Although fluoride  is  not listed as a priority pollutant, it can be
toxic to livestock and  plants, and can cause  tooth mottling in
humans.  The National Academy of Sciences recommends:  (1) two
milligrams per liter  as an upper limit for watering livestock and.
(2) one  milligram per liter for continuous use as irrigation water
on acid  soils  to  prevent plant toxicity and reduced crop yield.
Although some  fluoride  in drinking water helps to prevent tooth
decay, EPA's National interim Primary Drinking Water Regulations set
limits of  1.4  to  2-.4  milligrams per liter in  drinking water to
protect  against tooth mottling.
                                 6-2

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Arsenic

Arsenic is being regulated only in the Electronic Crystals
subcategory and only at facilities that produce gallium arsenide or
indium arsenide crystals.  The manufacture of gallium arsenide and
indium arsenide crystals generates arsenic wastes from slicing,
grinding, lapping, etching, and cleaning operations.  Concentrations
in raw wastes from crystals manufacture have been observed as high
as 80 milligrams per liter.

Certain compounds of arsenic are toxic to man both as poisons and as
carcinogenic agents.  The carcinogenic effects have only recently
been discovered and little is known about the mechanism.  Arsenic
can be ingested, inhaled, or absorbed through the skin.  The EPA
1980 water quality criteria for protection of aquatic life is 0.44
milligrams per liter.

Total Toxic Organics

Toxic organic pollutants were frequently found in wastewaters from
semiconductor and electronic crystal facilities.  The sources of
these organics are operations such as solvent cleaning, developing
of photoresist, and stripping of photoresist.

Because of the wide variety of solvents used in the manufacture of
semiconduqtors and electronic crystals, and the subsequent large
number of toxic organics found in process wastewaters. the Agency
has decided that total toxic organics (TTO) be used as the pollutant
parameter for discharge limitations.  TTO is the sum of the concen-
trations of toxic organics listed in Table 6-1 (which is found on
page 6-4} and found at concentrations greater than 0.01 milligrams
per liter.

6.2  TOXIC POLLUTANTS AND SUBCATEGORIES NOT REGULATED

The settlement agreement explained in Section 2  contained
provisions authorizing the exclusion from regulation, in certain
circumstances, of toxic pollutants and industry categories and
subcategories.  These provisions have been rewritten in a Revised
Settlement Agreement which was approved by the District Court for
the District of Columbia on March 9. 1979. NRDC v. Costle. 12 ERC
1833.

6.2.1  Exclusion of Pollutants

Ninety-five toxic pollutants are being excluded from regulation for
both the Semiconductor and Electronic Crystals subcategories.  The
basis for exclusion for eighty-two of these pollutants is Paragraph
                                 6-3

-------
 8(a)(iii)  which allows  exclusion  for  pollutants which  are  not
 detectable with state-of-the-art  analytical methods.   The  basis of
 exclusion  for  another nine  of  these pollutants is  also provided by
 Paragraph  8(a)(iii) which allows  exlusion  of  pollutants which are
 present  in amounts  too  small to be effectively reduced.  Four toxic
 pollutants are being excluded  from regulation because  these
 pollutants are already  subject to effluent limitations and standards
 being promulgated under the Metal Finishing Category.   This  is
 permitted  by Paragraph  8(a)(iii).
Toxic Pol-
lutant No.
                TABLE 6-1
POLLUTANTS COMPRISING TOTAL TOXIC ORGANICS

                  Toxic Pol-
                  lutant No.
   6   carbon  tetrachloride
   8   1.2,4-trichlorobenzene
 10   1,2-dichloroethane
 11   1.1.1-trichloroethane
 14   1.1,2 trichloroethane
 21   2.4.6-trichlorophenol
 23   chloroform
 24   2-chlorophenol
 25   1.2-dichlorobenzene
 26   1.3-dichlorobenzene
 27   1.4-dichlorobenzene
 29   1.1-dichloroethylene
 31   2.4-dichlorophenol
 37   1,2-diphenylhydrazine
 38   ethylbenzene
                     44  methylene chloride
                     48  dichlorobromoethane
                     54  isophorone
                     55  naphthalene
                     57  2-nitrophenol
                     58  4-nitrophenol
                     64  pentachlorophenol
                     65  pheriol
                     66  bis(2-ethylhexyl)phthalate
                     67  butyl benzyl phthalate
                     68  di-n-butyl phthalate
                     78  anthracene
                     85  tetrachloroethylene
                     86  toluene
                     87  trichloroethylene
In addition to the exclusion of the ninety-five pollutants for both
subcategories. another toxic pollutant is being excluded for the
Semiconductor subcategory only.  This pollutant is arsenic and is
being excluded under Paragraph 8(a)(iii) because it was found in
amounts too small to be effectively treated.

The nine toxic pollutants that are being excluded under Paragraph
8(a)(iii) because they were found in amounts too small to be
effectively treated are:  antimony, beryllium, cadmium, mercury.
selenium, silver, thallium, zinc, and cyanide.

The four toxic pollutants which are being excluded under Paragraph
8(a)(iii) because they are subject to effluent limitations being
promulgated under the metal finishing category are as follows:
nickel, copper, chromium, and lead.
                                 6-4

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The eighty-two pollutants which are being excluded under 8 (a)(iii)
because they were not detected are presented in Table 6-2 on page
6-7.

6.2.2  Exclusion of Subcateqories
Seventeen subcategories are being excluded from this regulation
based on either paragraph 8(a)(iii) or paragraph 8(a)(iv) of the
Revised Settlement Agreement.  Five subcategories are being excluded
under Paragraph 8(a)(iii) because pollutants are found only in trace
amounts and in quantities too small to be effectively reduced by
treatment.  These subcategories are magnetic coatings, mica paper.
carbon and graphite products, and fluorescent lamps.  Incandescent
lamps are being excluded on the same grounds, with the exception of
chromium which is excluded under paragraph 8(a)(iii) because the
sulfuric-chromium acid cleaning process will be regulated under the
metal finishing category.  Eight subcategories are being excluded
under Paragraph 8(a)(iii) because the pollutants will be effectively
controlled by technologies upon which are based other effluent
limitations and pretreatment standards.  Six of the eight
subcategories generate wastewater from unit operations which will be
covered by metal finishing:  these are switchgear. resistance
heaters, ferrite devices, capacitors (fluid-filled), transformers
(fluid-filled), and the subcategory of motors, generators, and
alternators.  Another subcategory. insulated devices-plastic and
plastic laminated, will be covered by the the plastic molding and
forming regulation.  The last subcategory, insulated wire and cable,
will be covered by a number of other categories which include
aluminum and aluminum alloys, copper and copper alloys, iron and
steel, plastics processing, and metal finishing.

Two subcategories are being excluded from regulation under Paragraph
8(a)(iv) because no water is used in the manufacturing process;
these are resistors and dry transformers.  Another subcategory. fuel
cells, is also being excluded under Paragraph 8(a)(iv) because there
are only two or three plants in this subcategory and fuel cells are
not manufactured on a regular basis..

Finally, one subcategory is being, excluded under both 8(a)(iii) and
8(a)(iv).  All pollutants except copper and lead are being excluded
under 8(a)(iii) because these pollutants are present only in trace
amounts and are not found in treatable quantities.  Copper generated
by this subcategory is being excluded from regulation under
Paragraph 8(a)(iii) because the unit operation which generates
copper will be covered by metal finishing.  Lead found in the
subcategory is being excluded from regulation under Paragraph
8(a)(iv) because it is unique to two plants.

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6.3  CONVENTIONAL POLLUTANTS NOT REGULATED

BOD, fecal coliform. and oil and grease are not being regulated for
either subcategory because they were found at concentrations below
treatability.  Total suspended solids (TSS) is not being regulated
in the case of semiconductors because it was found at an average
concentration of 10 milligrams per liter which is below treatability.

6.4  SUBCATEGORIES DEFEREED

Two subcategories of the Electrical and Electronic Components
category were proposed for regulation on March 11. 1983, under Phase
II of Electrical and Electronic Components,,  These subcategories are
electron tubes and luminescent materials (referred to as
phosphorescent coatings in this document).
                                 6-6

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                                                TABLE 6-2
                                      TOXIC POLLUTANTS NOT DETECTED
TOXIC POLLUTANT

 1.  Acenaphthene                                 47.
 2.  Acrolein                                     51.
 3.  Aerylonitrlie                                52.
 4.  Benzene                                      53.
 5.  Benzidine                                    56.
 7.  Chlorobenzene                                59.
 9.  Hexachlorobenzene                            60.
12.  Hexachloroethane                             61.
13.  1,1-Dichloroethane                           62.
15.  1,1,2,2-Tetrachloroethane                    63.
16.  Chloroethane                                 69.
18.  Bis(2-chloroethyl)ether                      70.
19.  2-Chloroethyl Vinyl Ether (Mixed)             71.
20.  2-Chloronaphthalene                          72.
22.  p-Chloro-m-cresol                            73.
28.  3,3'-Dichlorobenzidine                       74.
30.  1,2-trans-Dichloroethylene                   75.
32.  1,2-Dichloropropane                          76.
33.  l,3-Dichloropropylene(l,3-Dichloropropene)   77.
34.  2,4-Dimethyl Phenol                          79.
35.  2,4-Dinitrotoluene                           80.
36.  2,6-Dinitrotoluene                           81.
39.  Fluoranthene                            .     82.
40.  4-Chlorophenyl Phenyl Ether                  83.
41.  4-Bromophenyl Phenyl Ether                   84.
42.  Bis(2-chloroisopropyl)ether                  88.
43.  Bis(2-chloroethoxy)methane                   89.
45.  Methyl Chloride(Chloromethane)                90.
46.  Methyl Bromide (Bromomethane)
Bromoform  (Tribromomethane)
Chlorodibromomethane
Hexachlorobutadiene
Hexachlorocyclopen t ad iene
Nitrobenzene
2,4-Dinitrophenol
4,6-Dinitro-o-cresol
N-Nitrosodimethylamine
N-Nitrosodiphenylaraine
N-Nitrosodi-n-propylamine
Di-n-octyl Phthalate
Diethyl Phthalate
Dimethyl Phthalate
1,2-Benzanthracene [ Benzo(a)anthracene]
Benzo(a)Pyrene  (3,4-Benzopyrene)
3,4-Benzofluoranthene [Benzo(b)fluoranthene]
11,12-Benzofluoranthene [Benzo(k)fluoranthene]
Chrysene
Acenaphthylene
1,12-Benzoperylene [Benzo(ghi)perylene]
Fluorene
Phenanthrene
1,2,5,6-Dibenzathracene [Dibenzo(a,h)anthracene]
Indeno(1,2,3-cd)pyrene (2,3-O-Phenylenepyrene)
Pyrene
Vinyl Chloride  (Chloroethylene)
Aldrin
Dieldrin

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I
oo
                                                          TABLE 6-2
                                                TOXIC POLLUTANTS NOT DETECTED
                                                         (Continued)
          TOXIC POLLUTANT
 91.   ehlordane
      (Technical Mixture and Metabolites)
 92.   4,4'-BDT
 93.   4,4'-DDE(P,P'-DDX)
 94.   4,4'-DDD(P,P'-TDE)
 95.   Alpha-Endosu 1 fan
 96.   Beta-Endosulfan
 91.   Endosulfan Sulfate
 98.   Endrin
 99.   Endrin Aldehyde
100.   Heptachlor
101.   Heptachlor Epoxlde(BHC-Hexachloro-
      cyclohexane)
102.-  Alpha-BHC
103.   Beta-BHC
104.  Gamma-BHC(Lindane)
105.  Delta-BHC
106.  PCB-1242 (Aroclor 1242)
107.  PCB-1254 (Aroclor 1254)
108.  PCB-1221 (Aroclor 1221)
109.  PCB-1232 (Aroclor 1232)
110.  PCB-1248 (Aroclor 1248)
111.  PCB-1260 (Aroclor 1260)
112.  PCB-1016 (Aroclor 1016)
113.  Toxaphene
116.  Asbestos
129.  2,3,1,8-fetrachlorodibenzo-p-dioxin(TCDD)

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                           SECTION 7

                CONTROL AND TREATMENT TECHNOLOGY
The wastewater pollutants and pollutant parameters of concern
in the manufacture of semiconductors and electronic crystals.
as identified in Section 6. are arsenic, total toxic organics.
fluoride, suspended solids, and pH.  A discussion of the
treatment technologies currently practiced and other applicable
technologies for the reduction of these pollutants is presented
below, followed by an identification of six treatment system
options.

7.1  CURRENT TREATMENT AND CONTROL PRACTICES

Wastewater treatment techniques currently used in the semi-
conductor and electronic crystal industries include both
in-process and end-of-pipe waste treatment.  In-process waste
treatment is designed to remove pollutants from contaminated
manufacturing process wastewater at some point in the manufac-
turing process.  End-of-pipe treatment is wastewater treatment
at the point of discharge.

7.1.1  Semiconductor Subcateqory

In-process Control — In-process control techniques with wide-
spread use in this subcategory are collection of spent solvents
for resale or contractor hauling, and treatment or contract
hauling of the concentrated fluoride wastestream.  Contract
hauling, in this instance, refers to the industry practice of
contracting with a firm to collect and transport wastes for
off-site disposal.

Available information indicates that all semiconductor
facilities collect spent solvents to some degree.  Fifteen of
45 plants surveyed either treat or have contract-hauled the
concentrated fluoride stream.

Rinse water recycle  (as much as 85 percent) is practiced at
three of the plants  that were sampled.  The pollutants present
in the reused process wastewater are removed in the deionized
water production area.  Although reuse conserves water and
decreases wastewater discharge, certain facilities have found
recycle to result  in frequent process upsets and subsequent
product contamination.  Because of these problems, this
technology has limited applicability as the basis  for national
standards.
                               7-1

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End-of-pipe  treatment  —  End-of-pipe  controls  consist primarily
of neutralization which is  practiced  by all dischargers for pH
control.   One  plant uses  end-of-pipe  precipitation/clarifi-
cation  for control of  fluoride.

7.1.2   Electronic Crystals  Subcategory

In-Process Control —  In-plant control techniques at electronic
crystal manufacturers  are similar  to  those in  the semiconductor
subcategory.   Segregation and collection  of spent solvents for
resale  or  contract disposal is practiced  to some degree at all
plants.  Of  eight plants  visited,  two treat! their concentrated
fluoride stream; one has  the fluoride waste contract hauled.

End-of-Pipe  Treatment  —  Treatment technologies currently being
used at electronic crystals plants include neutralization and
precipitation/clarification.  All  six direct dischargers treat to
control pH.  suspended  solids and fluoride.  One direct discharger
also treats  end-of-pipe to  reduce  arsenic.

7.2  APPLICABLE TREATMENT TECHNOLOGIES

7.2.1 pH Control

Acids and  bases are commonly used  in  the  manufacture of semi-
conductors and electronic crystals and result  in process waste
streams exhibiting high or  low pH  values.  Sodium hydroxide and
sodium  carbonate are used in some  crystal growth processes and
for caustic  cleaning.  Sulfuric, nitric and hydrofluoric acids
are used for etching and  acid cleaning operations.

Several methods can be used to treat  acidic or basic wastes.
Treatment  is based upon chemical neutralization usually to pH 6-
9.  Methods  include:  mixing acidic and basic wastes, neutrali-
zing high  pH streams with acid or  low pH  streams with bases.  The
method  of  neutralization  used is selected on a basis of overall
cost.   Process water can  be treated continuously or on a batch
basis.  When neutralization is used in conjunction with precipi-
tation  of  metals it may be  necessary  to use a  batch method
regardless of flowrate.

Hydrochloric or sulfuric  acid may  be  used to neutralize alkaline
wastewaters; sulfuric acid  is most  often  chosen because of its
lower cost.

Sodium hydroxide (caustic soda), sodium carbonate (soda ash), or
calcium hydroxide (lime)  may be used  to neutralize acidic
wastewater.  The factors  considered in selection include price.
neutralization rate, storage and equipment costs, and neutral-
ization end products.   Sodium hydroxide is more expensive than
                               7-2

-------
many other alkalis but is often selected due to the ease of
storage, rapid reaction rate and the general solubility of its
end product.

7.2.2  Fluoride Treatment

Fluoride appears in semiconductor and electronic crystals
wastewater because of the use of hydrofluoric acid and ammonium
bifluoride as etching and cleaning agents.  Basically two options
are available to reduce fluoride in wastewaters from these facil-
ities:  chemical precipitation of fluoride followed by solids
removal, or isolation for contract hauling of strong fluoride
wastes.

The most usual treatment procedure practiced today in the United
States for reducing the fluoride concentration in wastewater is
precipitation by the addition of lime followed by clarification.
Calcium fluoride is formed:

          Ca(OH)2 + 2F~ = CaF2 + 2OHT

The theoretical solubility of calcium fluoride in water is 7.8 mg
fluoride ion per liter at 18°C.  The treatability of fluoride in
industrial wastewaters however is higher and- is dependent on the
characteristics of the specific wastewater.  Data from the semi-
conductor subcategory show that plants using precipitation and
clarification treatment technologies are achieving an average
effluent concentration of 14 milligrams per liter fluoride.

Hydroxide precipitation has proven to be an effective technique
for removing many pollutants from industrial wastewater.  Metal
ions are precipitated as hydroxides and fluoride is precipitated
as insoluble calcium fluoride.  The system operates at ambient
conditions and is well suited to automatic control.  Lime is
usually added as a slurry when used in hydroxide precipitation.
The slurry must be kept well mixed and the addition lines
periodically checked to prevent blocking, which may result from a
buildup of solids.  The use of hydroxide precipitation does
produce sludge requiring disposal following precipitation.  The
performance of a precipitation system depends on several varia-
bles.  The most important factors affecting precipitation
effectiveness are:

     1.    Addition of sufficient excess chemicals to drive the
          precipitation reaction to completion.  If treatment
          chemicals are not present in slight excess con-
          centrations, some pollutants will remain dissolved in
          the waste stream.

     2.    Maintenance of an alkaline pH throughout the
          precipitation reaction and subsequent settling.
                               7-3

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      3.    Effective  removal  of  precipitated  solids.

Removal  of suspended solids  or  precipitates  by gravitational
forces may be  conducted  in a settling  tank,  clarifier. or  lagoon.
but  the  performance  of the unit is  a function of the retention
time, particle size  and  density,  and the  surface area  of the
sedimentation  chamber.   Accumulated sludge can then be removed
either periodically  or continuously as  in the case of  a clarifier,

The  effectiveness  of a solids settling  unit  can often  be enhanced
by the addition of chemical  coagulants  or flocculants  which
reduce the repulsive forces  between ions  or  particles  and  allow
them to  form larger  floes which are then  removed more  easily.
Commonly used  coagulants include ferric sulfate and chloride;
commonly used  flocculants are organic  polyelectrolytes.

An applicable  technology for further reduction of fluoride is
filtration of  the  waste  stream  following  precipitation and
clarification.   Filtration is commonly  used  in water and
wastewater treatment for the removal of finely suspended
particles  not  removed by gravity separation.

A filtration unit  commonly consists of  a  container holding a
filter medium  or combination of media  such as sand or  anthracite
coal, through  which  is passed the liquid  stream.  The  unit can
operate  by gravity flow  or under pressure.   Periodic backwashing
or scraping of the media is  necessary  to  remove particles
filtered from  the  liquid stream and prevent  clogging of the
filter.  The proper  design of a filtration unit considers  such
criteria as filter flow  rate (gpm/sq.  ft.};,  media grain size, and
density.

For  the  electrical and electronic components category, the
usefulness  of  filtration technology is  questionable.   An
evaluation of  the  effectiveness of  precipitation and clari-
fication in this industry has shown that  this technology can
achieve  an effluent  concentration of approximately 14  mg/8..
Addition of a  filtration unit would not further reduce the
fluoride concentration significantly (approximately three
percent) since  14  mg/8. of fluoride  is approximately equal  to the
dissolved  calcium  fluoride concentration  soon after formation of
the precipitate.   Insoluble  filterable  calcium fluoride would
probably constitute  only a small  fraction of the 14 m/4 fluoride.

7.2.3  Arsenic  Treatment

Arsenic  is  found in  the  wastewaters of  plants fabricating
crystals of gallium  arsenide  and  indium arsenide.  These wastes
are found  in the form of powdered gallium arsenide or  indium
arsenide and result  from slicing, lapping, and polishing of
crystals.  Dissolved arsenides  result from crystal etching.  The
aim of wastewater  treatment  for  arsenic is to remove arsenic from
                               7-4

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the water in the form of an insoluble sludge, which may then be
disposed of in a manner which keeps it permanently segregated
from the environment.

Probably the most common technique used today for arsenic treat-
ment, as discussed in the wastewater treatment literature, is
alkaline precipitation with lime followed by clarification.  This
has been reported to reduce arsenic concentrations to the 1-10
milligrams per liter range.  The addition of coagulants such as
ferric sulfate or ferric chloride can further reduce the con-
centration of arsenic; levels of 0.05 milligrams per liter have
been reported in the literature.  Some additional removal can
then be achieved using a filtration polishing step.  Precipita-
tion/clarification technology for arsenic reduction has been
demonstrated in the industry (see page 7-2).

A general discussion of the technologies of precipitation, clari-
fication and filtration was presented in the previous subsection
dealing with the treatment of fluoride in wastewater.  Filtration
technology has not been demonstrated at any plant in this indus-
try and. as with fluoride, the technology would be expected to
provide only minimal further reduction of arsenic in plant
effluents.

7.2.4  Total Toxic Organics Control and Treatment

Toxic organics are found in the wastewaters of semiconductor and
electronic crystal facilities as a result of contamination from
various process streams and as a result of dumping.spent solvent
baths.  The two most applicable control or tratment technologies
for limiting toxic organic discharges from semiconductor and
electronic crystal plants are solvent management and carbon
adsorption.  Both of these control technologies are discussed
below.

Solvent Management — Solvent management refers to the practice
of preventing spent solvent baths, containing toxic organics.
from entering the plant wastewater streams.  While a small amount
of the solvent baths will enter the wastewaters through process
contamination (e.g., drag out), plants substantially reduce toxic
organic discharges by transferring the used solvent baths to
tanks or drums for disposal.  Transfer is done both manually and
mechanically through minor piping modifications.

Available data and information show that the above practice of
collecting solvents is done at all plants to some degree.  The
effectiveness of solvent management (i.e.. the effluent reduction
of toxic organics achieved) depends upon the extent to which
plants collect the spent solvents and the extent to which they
are handled properly in transferring the spent solvents to tanks
                               7-5

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and drums for disposal.  Plants with the best solvent management
programs use well designed segregation controls or practices to
minimize solvent bath spills into rinse or other process streams.
have some type of system for collecting routine spills and leaks
during handling, and have implemented rigorous employee training
programs.

A substantial number of plants in the semiconductor and elec-
tronic crystal industries have demonstrated that solvent manage-
ment will reduce toxic organic discharges to low concentrations.
This in-process control is effective because the only other
source of toxic organics in the effluent is from the contamina-
tion of process wastewater streams (e.g.. drag out).  Available
data show that process streams contribute a very small amount of
toxic organics to the effluent and this amount of toxic organics
is difficult to reduce or eliminate because the concentrations
approximate the level of treatability.

In addition to being relatively inexpensive, especially when com-
pared to more sophisticated end-of-pipe treatment such as carbon
adsorption, solvent management has another advantage.  After
plants have collected the spent solvents in tanks or drums for
disposal, they are able to sell the solvents to companies which
purify the used solvents in bulk and then resell these solvents.
(Note:  Names of some companies which provide this reclaim
service can be found in the public record for the electrical and
electronic components regulation.)  The revenue obtained from the
sale of these solvents generally offsets the costs of collecting
the solvents.

A method of determining the effluent level of toxic organics
achievable using this in-plant control is to identify and sum the
concentration o.f toxic organics from each sourcet1)    Below we
have described all the process wastewater sources of toxic
organics from plants in the semiconductor and electronic crystal
industries.  These sources are based on data and information
collected from plant personnel and confirmed by observation
during plant visits.  Table 7-1 on page 7-10 summarizes the toxic
organic effluent contribution from each source.
     At proposal,  a slightly different method of determining
     the TTO limit was used.  The method consisted of graphing all
     the effluent TTO data and then examining the graph to  locate a
     point at which a distinct separation occurred in the magnitude
     of the TTO effluent concentrations.  This  break point was 0.47
     mg/ft..   Concentrations falling below the breakpoint reflected
     the solvent management practices of the best performing plants.
     whereas those above the breakpoint reflected poor solvent
     management practices.  We assumed that the concentrations below
     0.47 mg/ft. reflected the total of all process wastewater
     contamination but did not specifically add up the total
     contribution of all process wastestreams.
                               7-6

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Acid Wastes -- Acid wastes consist primarily of hydrofluoric acid
and at some plants consist of lesser amounts of hydrochloric and
nitric acids.  These are generated from etching and cleaning
steps.  This waste stream includes the spent hydrofluoric acid
used directly in etching and may also include the strong or
quench rinses after etching.  Some plants segregate this waste
for contractor disposal while other plants treat this in-process
waste stream to control pH and fluoride prior to discharge.

Developer Quench Rinse — Developer quench rinse is the water
rinse that follows the photoresist development step.

Dilute Rinses -- Dilute rinses consist of those water rinses
following the first or quench rinse after a process operation.
such as acid etching, photoresist stripping, or solvent clean-
ing.  These rinses are usually very low in pollutant concentra-
tions and as a result are recycled to the process at some
plants.  Included are rinses following the application of both
negative and positive photoresist.

Equipment Cleaning Wastes — Cleaning of process equipment.and
related items takes place at all facilities.  The process equip-
ment cleaned includes glassware, bell jars, the stainless steel
or molybdenum masks used in photoresist exposure operations.
shipping containers, and general laboratory equipment.  The
cleaning solutions used include acetic, hydrochloric and
fluoboric acids,
freon. hydrogen peroxide, and various proprietary mixtures.

Scrubber Wastes — Wet air scrubbers are used at many electronic
crystals and semiconductor facilities to clean the  air from
process operations utilizing acids and solvents, laminar benches.
diffusion ovens and from epitaxial growth operations.  The
discharges from these scrubbers are frequently high in toxic
organics although the flows generally represent only a small
portion of the total facility effluent.

Stripper Quench Rinses — The stripper quench rinse is a
deionized water rinse that  immediately follows the  photoresist
stripping operation.  This quench may contain residual
concentrations of sulfuric acid and hydrogen peroxide  (common
constituents of inorganic strippers) and such organics as
tetrachloroethylene and phenol  (common constituents of organic
strippers).

Wafer Slicing Wastes -- Although wafer slicing wastes  are  usually
hauled for disposal due to  their high concentratons of solids and
oils, one waste stream generated solely from wafer  slicing
operations was analyzed for TTO.
                                7-7

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 Wafer  Finishing  Wastes  —  Plants  which produce  crystal  wafers
 generate wastes  from, grinding,  lapping,  and  polishing  the
 wafers.  Wafer finishing wastes  include associated wafer washes
 and  rinses.

 Carbon Absorption  -- Another  applicable technology for  the
 control of  toxic organic discharges  is end-of-pipe treatment
 using  carbon  adsorption.   Frequently used in  advanced wastewater
 treatment,  adsorption is a process in which soluble  substances
 become chemically  or physically  bonded to a solid surface.  In
 operation,  wastewater relatively  free of  suspended matter is
 passed through a chamber containing  activated carbon which  has a
 high capacity for  adsorbing organic  substances  from  the stream.
 Once the capacity  of the carbon  is exhausted, it must be replaced
 or regenerated.

 The  effectiveness  of carbon in removing specific organics varies
 and  is dependent on molecular weight and  polarity of the mole-
 cules, and  on operating conditions such as contact time, tempera-
 ture and carbon  surface area.  EPA isotherm1 tests have  indicated
 that activated carbon is very effective in adsorbing 65 percent
 of the toxic  organic pollutants and  is reasonably effective for
 another 22  percent.  Table 7-2 presents the theoretical
 treatability  using activated  carbon  for the 30  toxic organics
 found  in semiconductor  and electronic crystals  wastewater.

 Most of the 30 toxic organics are theoretically treatable by
 activated carbon to 0.05 milligrams  per liter.  Eight of these
 organics have estimated treatabilities of between 0.10  and  1.0
 milligrams  per liter.

 In order to assess the  effectiveness  of using activated carbon
 for  removal of toxic organics, the Agency used  a model  plant
 approach.  Data  from wastewater sampling  in'these subcategories
 have shown that  between five  and 15  toxic organics occur in any
 particular plant effluent.  The estimated lower limit would
 consist of a  plant having  one of the  three most difficult
 pollutants to treat and  four  of the  organics  that can be reduced
 to 0.05 mg/8.  .  An estimated upper limit  could be approximated
 from a plant  having all  three of the  most difficult  pollutants to
 treat and the remaining  12  reducable  to 0.05 mg/8..   The TTO
 effluent concentrations  based on these  occurrances would range
 from 0.7 mg/Jl to  2.1 mg/Jl.

Because this  range approximates the TTO effluent level  achievable
by solvent management,   the use of carbon  adsorption would result
in minimal,  if any. additional removal  of  toxic organics beyond
solvent management.  While plants could use carbon adsorption to
                               7-8

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achieve approximately the same effluent concentration of toxic
organics as they could using solvent management, carbon adsorp-
tion is unlikely to be used since plants have found solvent
management to be much less expensive, relatively simple to
institute, and approximately as effective in controlling toxic
organic discharges.

7.3  TREATMENT AND CONTROL OPTIONS

For the purpose of establishing effluent limitations and evaluat-
ing the costs of wastewater treatment and control for the
semiconductor and electronic crystal industries the Agency
identified the following six treatment and control options:

     Option 1:  Neutralization for pH control and solvent
                management for control of toxic organics.

     Option 2:  Option 1 plus end-of-pipe precipitation/clari-
                fication for treatment of arsenic, fluoride, and
                total suspended solids (TSS).

     Option 3:  Option 1 plus in-plant treatment (precipita-
                tion/clarification) of the concentrated fluoride
                stream.

     Option 4:  Option 2 plus recycle of the treated effluent
                stream to further reduce fluoride.

     Option 5:  Option 2 plus filtration for reduction of
                fluoride, arsenic, and suspended solids.

     Option 6:  Option 5 plus carbon adsorption to reduce toxic
                organic  concentrations.
                               7-9

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                                 Table  7-1
                Process  Stream Contribution  to Effluent TTO
WasteSource

Acid Wastes

Acid Wastes
Acid Wastes
Acid Wastes
Acid Wastes
Acid Wastes
Acid Wastes
Acid Wastes
Acid Wastes
              Stream
                 ID
              3730
              M19-2
              M19-3
              3316
              3317
              3779
              3262
              3264
Developer.. Quench Rinse
Developer Rinse

Dilute Rinses
Dilute
Dilute
Dilute
Dilute
Dilute
Dilute
Dilute
Dilute
Dilute
Dilute
Rinses
Rinses
Rinses
Rinses
Rinses
Rinses
Rinses
Rinses
Rinses
Rinses
              3647
3719
3721
3723
3668
3672
3674
3483
3486
3489
3765
Equipment Cleaning Wastes

Equipment Cleaning   3837
Equipment Cleaning   M19-6
 Plant
  ID
            404
          30167
          30167
          30167
          30167
          36133
          41061
          41061
          04294
35035
35035
35035
42044
42044
42044
06143
06143
06143
36135
                          402
                        30167
 TTO
mq/a.
          2.208
          0.165
          0.272
          0.0 6;3
          0.042
          0.091
          0.034
          0.066
          0.085
0.024
0.059
0.059
0.112
0.060
0.079
0.014
0.324
0.030
0.110
                   <0.010
                    0.183
                                                 Total
                                                 Plant
                                                 Flow
         0.30
        12.0
        12.0
        10.7
        10.7
         0.12
        12.0(D
59.0
52.0
50.7
46.0
47.8
46.5
50.4
47.5
48.4
50.0
                  15.0
                   0.8
                                          TTO
                                     Contribution*
              0.006
              0.020
              0.033
              0.007
              0.004
              0.0001
              0.004
              0.008
                      0.002
0.014
0.031
0.030
0.052
0.029
0.037
0.007
0.154
0.015
0.055
                     <0.0015
                      0.001
    The total toxic organic contribution of each process wastewater
    stream to the effluent is obtained by multiplying the measured
    concentration of TTO by the ratio of the plant reported flow for that
    stream to the total plant effluent flow.  The units of mg/ft refer to
    the effluent concentration of TTO which could be attributed to a
    particular wastestream.
                               7-10

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                          Table 7-1 (Continued)
               Process Stream Contribution to Effluent TTO
Waste Source
Scrubber Wastes
               Stream
                 ID
           Plant
            ID
Scrubber
Scrubber
Scrubber
Scrubber
Scrubber
Scrubber
Scrubber
Scrubber
Scrubber
Wastes
Wastes
Wastes
Wastes
Wastes
Wastes
Wastes
Wastes(3)
Wastes
M16- 2
3474
3250
3718
3482
3485
3488
3733.3734
3732
04296
02347
41061
35035
06143
06143
06143
404
404
Stripper Quench Rinse

Resist strip rinse   3645
Resist strip rinse   3260
Resist strip rinse   3265
Resist strip rinse    (4)
Wafer Finishing Wastes
Wafer
Wafer
Wafer
Wafer
Wafer
Wafer
Wafer
Finishing
Finishing
Finishing
Finishing
Finishing
Finishing
Finishing
Wafer Slicing Wastes

Wafer Slicing
M18-2
M19-1
3318
3470
3641
3477
3476
               3731
                         04294
                         41061
                         41061
                         06143
  380
30167
30167
301
04294
02040
02040
            404
           TTO
          mq/1
                                         1.868
                                         5.091
                                         0.058
                                         9.086
                                         2.615
                                         2.115
                                         1.415
                                         2.116
                                         0.714
                    0.021
                    0.010
                    6.86
                     200
2.366
0.250
0.018
1.010
0.095
0.105
0.086
          0.237
        Total
        Plant      TTO
        Flow   Contribution
          %       mq/g,	
                                            2.2(2)
                                            4,7
                                            0.5
                                            1.0
                                            5.9
                                            5.3
                                            5.5
                                            3.8
                                            4.1
                   1.8
                   O.06
34.5
 1.9
 1.1
 1.0
34.5
 0.5
 2.2
         0.8
                                       0.
                                       0,
                             0.041
                             0.239
                             0.0003
                             0.091
                               154
                               112
                             0.078
                             0.080
                             0.029
                   0.0004
                   0.0002
                   0.123
                   0.120
0.816
0.005
0.0002
0.010
0.033
0.005
0.002
           0.002
(1)  Plants unable to furnish flow data; flow percent assumed equal
     to maximum observed at other plants.
(2)  Because data were available for only one of four scrubbers at
     the plant, its TTO concentration was used and its flow was
     multiplied by four.
(3)  Flow-proportionally combined discharge from two scrubbers.
(4)  Industry data submitted during comment period.
                               7-11

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                          ,  TABLE 7-2
                 TREATABILITY OF TOXIC ORGANICS
                     USING  ACTIVATED CARBON
                                             Treatability
Toxic  Pollutant                             	mg/1
  6   carbon  tetrachloride                          0.050
  8   1,2,4-trichlorobenzene                        0.01
10   1,2-diehloroethane                            0.1-1.0
11   2.4,6-trichlorophenol                         0.1-1.0
14   1.1,2-trichloroethane                         0.1-1.0
21   2,4,6-trichloropheriol                         0.025
23   chloroform                                    0.1-1.0
24   2-chlorophenol                                0.050
25   1.2-dichlorobenzene                           0.050
26   1,3-dichlorobenzene                           0.050
27   1,4-dichlorobenzene                           0.025
29   1,1-dichloroethylene                  :        0.1-1.0
31   2,4-dichlorophenol                    •        0.050
                                          I
37   l,2~diphenylhydrazine                         0.050
38   ethylbenzene                                  0.050
44  methylene chloride                            0.1-1.0
48  dichlorobromomethane                          0.1-1.0
54   isophorone                                    0.050
55  naphthalene                                   0.050
57  2-nitrophenol                                 0.050
58  4-nitrophenol                                 0.050
64  pentaehlorophenol                             0.010
65  phenol                                        0.050
66  bis(2-ethyihexyl)phthalate                    0.010
67  butyl benzyl phthalate                        0.001-0.010
78  di-n-butyl phthalate                          0.025
78  anthracene                                    0.010
85  tetrachloroethylene                           0,050
86  toluene                                       0.050
87  trichloroethylene                             0.1-1.0

                               7-12

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                            SECTION 8

               SELECTION OF APPROPRIATE CONTROL AND
               TREATMENT TECHNOLOGIES AND BASES FOR
                           LIMITATIONS


Effluent limitations for the semiconductor subcategory and the
electronic crystals subcategory are presented in this section.
The technology basis and the numerical basis are also presented
for each regulation, in addition to the statistical methodology
used to develop limitations.

8.1  SEMICONDUCTOR SUBCATEGORY

8.1.1  Best Practicable Control Technology Currently Available
       (BPT)

                            TABLE 8-1

                     BPT EFFLUENT LIMITATIONS
                          SEMICONDUCTORS

                 Long-term
                  Average         30-day
                   (LTA)   	Average	     Daily Maximum
Pollutant         (mg/1)    VF    Limit (mg/1)    VF    Limit (mg/1)


pH in range 6-9
Total Toxic
   Organics                          *                    1.37


*     The Agency is not establishing 30-day limitations for reasons
      presented below.

BPT limitations are based on Option 1 which consists of neutrali-
zation and solvent management.  Solvent management is widely
practiced and will reduce the amount of toxic organics presently
being discharged by approximately '80.000 kilograms per year.  For
the facilities which do not practice effective solvent management
already,  compliance costs should be minimal as discussed in
Section 9.2.  Neutralization is practiced by all facilities
subject to BPT and therefore facilities will not incur additional
costs for compliance as discussed in Sections 7.2.4 and 9.2.
                                 8-1

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Option 2 was not selected because, in the semiconductor subcate-
gory. Option 3 can be substituted for and is also less expensive
than Option 2.  Fluoride in this industry is primarily generated
from a particular process stream, hydrofluoric acid etching, and
in-plant treatment eliminates the need for end-of-pipe treatment
of all process wastewater as in Option 2.  Option 3 was not
selected because it is more appropriately reserved for considera-
tion under BAT.  Options 4. 5. and 6 were not selected for the
reasons provided under the BAT discussion.

pH -- Properly operated end-of-pipe neutralization of wastewater
will ensure discharges in the pH range of 6 to 9.

Total Toxic Organics (TTO) — As explained below, the Agency is
regulating total toxic organics rather than, individual toxic
oganics.  Section 7 presents the effluent contribution of toxic
organics from each process wastewater stream in the semiconductor
and electronic crystal subcategories.  In order to explicitly
account for the contribution of each stream, the TTO limit is
derived by summing the TTO- contribution from each stream as shown
in Table 8-2.  In cases where we have more than one value for the
TTO contribution, we have used the maximum or worst case contribu-
tion.  No single plant exhibited the TTO maximum for each process
stream.  Thus, the summation of maximum stream contributions
provides a theoretical "worst case" that does not actually exist.

By basing the limit on the total contribution of all process
wastestreams. EPA has determined that solvent management can
reduce the discharges from other than process contamination to
zero or close to zero.  Such a limit is feasible for two reasons:
First, as stated above, the TTO limit is a "worst case" limit.
Therefore, there is some margin for minor releases of TTO from
solvent baths, particularly when commingling with other process
wastestreams is taken into account.  Second. EPA has concluded
that solvent management can and does reduce any discharges that
would cause the plant to come into noncompliance.  As stated
previously, 53 percent of the plants already meet the limit.
Further, solvent management practices are specifically designed
not only to control deliberate dumping, but also to control spills
and leaks and poor employee work habits that would lead to
violations.

Toxic organics are being regulated as the sum of 30 individual
toxic organics; the sum of this total is referred to as total
toxic organics (TTO).  Compounds included in TTO are listed in
Table 6-1.  Each of the 30 toxic organic pollutants on the TTO
list was found in the effluent at concentrations greater than 0.01
milligrams per liter from plants in the semiconductor and
                               8-2

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electronic crystal subcategories.  The Agency is using 0.01
milligrams per liter as the basis for inclusion because this level
is consistent with the Agency's level of detection for these
pollutants as presented in EPA's proposed Guidelines Establishing
Test Procedures for the Analysis of Pollutants (December 3.
1979).  We are not regulating individual compounds because of the
wide range of solvents used and associated concentration ranges.

A 30 day average was not established for TTO primarily because it
is not a treatment system which exhibits occasional wide
variations in performance.  In cases where both a daily maximum
and monthly averages exist, the Agency recognizes that the
performance of the treatment system can periodically fluctuate as
a result of variations in the process fl'ow. pollutant loading.
mixing effectiveness, and combinations of these and other
reasons.  Thus, monthly averages are often less than the daily
maximum because better performance can be achieved over a  longer
period of time.  Here, however, the daily and monthly limits would
not be expected to significantly differ because solvent management
does not rely on the operation of a treatment system, but  rather
on no dumping and other housekeeping practices as previously
described.
                             TABLE 8-2

                     CONTRIBUTION OF TTO FROM
            PROCESS WASTEWATER STREAMS TO PLANT EFFLUENT
                                Stream              TTO Effluent  *
   Wastewater Source	        ID                Contribution*

Acid Wastes                     M19-3                  0.033
Developer Quench Rinse          3647                   0.002
Dilute Rinses                   3486                   0.154
Equipment Cleaning Wastes       M19-6                  0.001
Stripper Quench Rinse           3265                   0.123
Scrubber Wastes                 3474                   0.239
Wafer Finishing Wastes          M18-2                  0.816
Wafer Slicing Wastes            3731                   0.002
     Total Toxic Organics                              1.370   rag/1


*The total toxic organic contribution of each  process wastewater
stream to the effluent  is obtained by multiplying  the measured
stream concentration of TTO  by the ratio of  the plant reported
flow for that stream to the  total plant effluent flow.  The units
of mg/1 refer to the effluent concentration  of TTO which  would be
attributed to a particular wastestream.
                                8-3

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8.1.2  Best Available Technology Economically Achievable (BAT)

                            TABLE 8-3

                     BAT EFFLUENT LIMITATIONS
                          SEMICONDUCTORS

                      (LTA)     30-day Average      Daily Maximum
Pollutant            (mg/1)   VF   Limit (mg/1)   VF   Limit (mg/1)
Total Toxic Organic                                      1.37
Fluoride              14.5    1.2    17.4        2.2    32
BAT limitations are based .on Option 3.  This technology consists
of neutralization and solvent management (Option 1) plus in-plant
precipitation/clarification of the concentrated fluoride stream.
Contract hauling of the concentrated fluoride stream is an accept-
able alternative to treatment as a means of achieving compliance.

Option 4 (Option 1 plus end-of-pipe precipitation/clarification
followed by a recycle of the treated effluent) was not selected
because very few facilities have been able to solve serious
operational problems associated with recycling.  Therefore Option
4 is not demonstrated in this industry on a national basis.
However, facilities located in areas which experience water
shortages are encouraged to investigate this technology option.
Option 5 (Option 1 plus end-of-pipe precipitation/clarification
followed by filtration) was not selected because it will only
achieve a three (3) percent increase in fluoride reduction while
at the same time significantly.increasing treatment costs to the
facilities.  Option 6 (Option 5 plus carbon adsorption) was not
selected because the vast majority of facilities practicing
effective solvent management would not discharge concentrations of
toxic organics which could be further reduced.

The basis for the total toxic organics (TTO:) limitation was
presented in Section 8.1.1.  This limit does not change for BAT.
The basis for fluoride limits is presented below.

Fluoride — The long term treated fluoride data on which EPA based
its BAT fluoride limitation was obtained from a plant with
fluoride raw wastes similar in all major respects to fluoride raw
wastes from all plants in the semiconductor and electronic crystal
subcategories.  EPA confirmed the similarity of the fluoride raw
                               8-4

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waste from this plant with other plants in these industries by
comparing trip reports from 20 visited plants.  A statistical
analysis of daily concentrations of fluoride in the effluent was
conducted to derive the long term average concentration and
variability factors for use in establishing proposed limitations,
The statistical methodology is presented in Section 8.3.  Table
8-4 summarizes the analysis of the historical performance data.
                             TABLE 8-4
              HISTORICAL PERFORMANCE DATA ANALYSIS OF
                  EFFLUENT FLUORIDE WITH HYDROXIDE
                 PRECIPITATION/CLARIFICATION SYSTEM


  Number of            Average              Variability Factors
 Data Points      Concentration mg/1      Daily          30-day

     281                14.5               2.2             1.2


8.1.3  Best Conventional Pollutant Control Technology  (BCT)


                             TABLE 8-5

                      BCT EFFLUENT LIMITATIONS
                           SEMICONDUCTORS


                 LTA    	30-day Average        Daily Maximum
Pollutant       (mg/1)      VF    Limit  (mg/1)    VF    Limit
(mg/1)


pH  in range 6-9
For BCT  the  pH  limitation  is  based  on  the  BPT  technology,  because
BPT achieves the maximum feasible control  for  pH.   Since BPT is
also  the minimal level  of  control required,  no possible applica-
tion  of  the  BCT cost  test  cold  result  in BCT limitations more
stringent  than  those  promulgated here.  There  are  no  other conven-
tional pollutants  of  concern  in the semiconductor  subcategory as
discussed  in Section  6.
                                8-5

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8.1.4  New Source Performance Standards (NSPS)
                             TABLE 8-6

                     NSPS EFFLUENT LIMITATIONS
                           SEMICONDUCTORS
Pollutant
(rag/1)
LTA
(mg/1)
30-day
Average
VF Limit (mg/1)
Daily Maximum
VF Limit
pH in range 6-
9
Total Toxic Ocganics 1.37
Fluoride
14.5 1.2 17.4 2.2 32
NSPS limitations are based on solvent management, neutralization,
and precipitation/clarification of the concentrated fluoride
stream (Option 3).  These technologies are equivalent to BAT for
control of toxic organics and fluoride, and BCT for control of
pH.  Other options were not selected for reasons previously
presented under BAT.

NSPS limitations are the same as those for BAT and BPT for pH.
The bases for those limitations were presented in Section 8.1.2.


8.1.5  PretreatmentStandards for New and Existing Sources (PSES
       and PSNS)

                             TABLE 8-7

                 PSES AND PSNS EFFLUENT LIMITATIONS
                           SEMICONDUCTORS
                                  30-day
                    . LTA   	Ayerage	     Daily Maximum
Pollutant          (mg/1)  VF    Limit (mg/1)  VF    Limit (mg/1)


Total Toxic Organics                                   1.37
                               8-6

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For PSES and PSNS. the Agency is promulgating TTO (total toxic
organics) limitations based on solvent management.  Since
biological treatment at well operated POTWs achieving secondary
treatment does not achieve removal equivalent to BAT for TTO.
pass through occurs.  Effective solvent management can reduce TTO
by over 99 percent while a POTW will only remove 13 to 97 percent
of these same pollutants.  Accordingly. EPA is promulgating PSES
and PSNS based on technology equivalent to BPT/BAT/NSPS for
reduction of TTO.

The Agency is not promulgating pretreatment standards for
fluoride.  Fluoride is not a toxic pollutant under the Act and
EPA has more discretion concerning the establishment of
pretreatment standards for such pollutants.  In this particular
instance fluoride is not a pollutant of concern for indirect
dischargers, although fluoride does pass through POTWs.  The flow
for the semiconductor category is 157.000 gallons per day and the
concentration of fluoride in the wastewater entering the POTW is
65.5 mg/ft.  EPA's environmental assessment, based on a
substantial body of scientific literature, shows that there  is
little likelihood of health or environmental effects from the
introduction of fluoride at these flows and concentrations into a
POTW.  For these reasons, EPA believes it is hot appropriate to
establish nationally applicable categorical pretreatment
standards.

PSES and PSNS limitations are the same as those for BPT/BAT
except that pH is not regulated for pretreatment.  The  basis for
TTO limitations was presented in Section 8.1.1.

8.2  ELECTRONIC CRYSTALS SUBCATEGORY

       Best Practicable Control Technology Currently Available

                            TABLE 8-8

                     BPT EFFLUENT LIMITATIONS
                       ELECTRONIC CRYSTALS

                     LTA        30-day Average       Daily Maximum
Pollutant           (mg/1)    VF    Limit  (mg/1)   VF     Limit  (mg/1)
pH in range 6-9
Total Toxic Organics
Arsenic*
Total Suspended
Solids
Fluoride
0
18
14
.51
.2
.2
1.
1.
1.
62
26
2
0.83
23
17.4
4
3
2
.09
.35
.2
1
2
61
32
.37
.09
.0

     Arsenic  limitations  are  applicable  only to  discharges  from
     gallium  arsenide  and indium arsenide  crystal  manufacturing
     operations.
                                8-7

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BPT limitations are based on Option 2.  This technology consists
of Option 1  (solvent management and end-of-pipe neutralization)
plus end-of-pipe precipitation/clarification.  These technologies
control pH.  toxic organics. total suspended solids (TSS).
fluoride, and arsenic.  With the exception of solvent management.
these treatment technologies have already been installed at all
electronic crystal facilities subject to BPT.  For facilities
which do not practice effective solvent management, compliance
costs will be minimal as discussed in Sections 7.2.4 and 9.2.

Arsenic is only being regulated at facilities which manufacture
gallium or indium arsenide crystals.  Total toxic organic limita-
tions, rather than limitations on each toxic organic pollutant.
are set for  the same reasons explained under BPT for the
semiconductor subcategory.

Option 3 was not selected because this technology is an in-plant
control for  only one process stream, hydrofluoric acid etching.
and as such, will not control all wastewater sources of arsenic
and TSS.

Option 4 (Option 1 plus end-of-pipe precipitation/clarification
followed by  a recycle of the treated effluent) was not selected
because very few facilities have been able to solve serious
operational  problems associated with recycling.  Therefore Option
4 is not demonstrated in this industry on a nationwide basis.
However, facilities located in areas which experience water
shortages are encouraged to investigate this technology option.
Option 5 (Option 1 plus end-of-pipe precipitation/clarification
followed by  filtration) was not selected for arsenic because the
Agency has no data available to demonstrate or reason to believe
that filtration will further reduce arsenic discharges.  This
option was also not selected for fluoride because, as previously
stated under BAT for semiconductors, filtration would only reduce
fluoride by  three percent while significantly increasing treatment
costs to the facilities.  Option 6 (Option 5 plus carbon
adsorption) was not selected because the vast majority of
facilities practicing solvent management would not discharge
treatable concentrations of toxic organics.

The bases of pH. total toxic organics (TTO) and fluoride
limitations were presented in Section 8.1 for the semiconductor
subcategory.  The bases for arsenic and suspended solids
limitations are presented below.

Arsenic -- Only limited data are available from the electronic
crystals subcategory for the treatment of arsenic-bearing wastes.
Therefore,  transfer of performance from the non-ferrous metals
industrial category is being used for arsenic limitations.

The rationale for transferring performance from this industry are
(1) the treatment technology used in the non-ferrous metals
industry for reduction of arsenic is the same as that for
                               8-8

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electronic crystals, and  (2) the raw waste arsenic concentrations
(1-10 milligrams per liter) found in non-ferrous metals wastewater
compare  reasonably with those found in electronic crystals
wastes.  Based on engineering judgment, the Agency has determined
that electronic crystals  effluent limitations based on non-ferrous
data are achievable.

Monitoring data were submitted from one non-ferrous metals plant
using a  lime  precipitation/clarification treatment system to
control  arsenic discharge,  the same technology as Option 2.

Excluded from the data base were data where pH was less than 7.0
or TSS was greater than 50  milligrams per liter: data points where
the treated value was greater than the raw value; and data points
where the raw value was too low to ensure pollutant removal.  A
statistical analysis of daily concentrations of arsenic in the
treated  effluent was conducted to derive long-term average
concentration and variability factors for use in proposing
limitations.  Table 8-9 summarizes the analysis of the monitoring
data.
                             TABLE 8-9

      HISTORICAL PERFORMANCE DATA ANALYSIS OF EFFLUENT ARSENIC
              WITH HYDROXIDE PRECIPITATION/CLARIFICATION

          Number of         Long-Term       Variability Factors
         Data Points        Average         Daily      30-Day

              111              0.51           4.09        1.62

Total Suspended Solids — TSS limitations in Table 8-8 represent a
transfer of performance data from the metal finishing  industrial
category.  The rationale  for transferring performance  data from this
industry are  (1) the raw  waste TSS concentrations are  similar  to
those found in electronic crystals wastes.  (2) the treatment
technology used for solids  reduction  in the metal finishing  industry
is the same as that proposed for electronic crystals.  (3)  several
electronic crystals facilities also conduct metal finishing
operations, and  (4) the use of metal  finishing treatment data
provided us with substantially more data as the  basis  of the TSS
limit.   Based on engineering  judgment, the Agency has  determined
that electronic crystals  effluent limitations based  on metal
finishing data are achievable.

The average effluent concentration of  18.2 milligrams  per  liter was
derived  from  EPA sampling data from numerous metal finishing plants
.practicing solids removal by  clarification  technology.  Excluded
from the data base were effluent TSS  concentrations  greater  than  50
milligrams per liter,  since this represents a  level  above  which no
well-operated treatment plant should  be operating.   The variability
factors  of 1.26 and 3.35  each represent the median of  variability
factors  from  17 metal  finishing plants with  long-term  data.
                                8-9

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8.2.2  Best Available Technology Economically Achievable (BAT)

                              TABLE 8-10

                       BAT EFFLUENT LIMITATIONS
                          ELECTRONIC CRYSTALS


Pollutant
Total Toxic Organics
Arsenic*
Fluoride

LTA
(rag/1)

0.51
14.5


VF

1.62
1.2
30-day
Average
Limit (mg/1)

0.83
17.4

Daily

Maximum
VF Limit (mg/1)

4.09
2.2
1.37
2.09
32
  *  Arsenic limitations are applicable only to discharges from
    , gallium arsenide and indium arsenide crystal manufacturing
     operations.


BAT limitations are based on the BPT technology (Option 2).
Option 3 was not selected for the same reason presented above.
Options 4, 5, and 6 were not chosen for reasons explained under
BPT (Section 8.2.1).

The bases for arsenic, fluoride, and.total toxic organics (TTO)
limitations were presented in Section 8.2.1 under BPT.  These
limitations do not change for BAT.
8.2.3  Best Conventional Pollutant controlTechnology (BCT)
                            TABLE 8-11      ;

                     BCT EFFLUENT LIMITATIONS
                        ELECTRONIC CRYSTALS
Pollutant
LTA
(mg/1)
30-day
Average
VF Limit (mg/1)
Daily Maximum
VF Limit (mg/1)
pH in range 6-9
Total Suspended Solids  18.2    1.26    23          3.35     61.0
                               8-10

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For BCT, pH. and TSS limitations are based on BPT technology.
For pH, BPT is equal to BCT for the same reason discussed under
the Semiconductor subcategory.  For TSS, the Agency considered
the addition of filtration to BPT (Option 5), but rejected this
technology option because of the minimal additional reduction of
total suspended solids.  Based on BPT, the average removal of TSS
for each of the six (6) direct dischargers will be approximately
5,400 kilograms per year.  Filtration would only increase this
amount by 100 kilograms per year (0.4 kgs/day) or by less than
two percent (2%).  Since there is no other technology option
which would remove significant amounts of TSS, the Agency is
setting BCT equal to BPT.  Accordingly, there is no need to
conduct the BCT cost test.

8.2.4  .New Source Performance Standards(NSPS)

                            TABLE 8-12

                    NSPS EFFLUENT LIMITATIONS
                        ELECTRONIC CRYSTALS
Pollutant
LTA
(mg/1)
30-day
Average
VF Limit (mg/1)
Daily Maximum
VF Limit (ťg/l)
pH in range 6-9
Total Toxic Organics
Arsenic*
Fluoride
Total Suspended Solids
0.51
14.5
IB, 2
1.62
1.2
1.26
0.83
17.4
23
4.09
2.2
3.35
1.37
2.09
32
61.0
  *  Arsenic  limitations are applicable only to discharges  from
     gallium  arsenide  and  indium arsenide  crystal manufacturing
     operations.

NSPS limitations  are based on  solvent management, neutralization,
and end-of-pipe precipitation/clarification.  These technologies
are equivalent to BAT  for  toxic pollutants and fluoride,  and  are
equivalent  to BPT/BCT  for  conventional pollutants.  Other options
were not  selected for  reasons  presented under BAT.

NSPS effluent limitations  for  electronic crystals producers are
the same  as BPT/BAT for toxic  pollutants and fluoride  and BPT/BCT
for pH and  suspended solids.   The  bases for those limitations are
presented in  Sections  8.2.1 and 8.2.3.
                                8-11

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8.2.5  Pretreatment Standards for New and Existing Sources
       (PSNS and PSES)
                            TABLE 8-13

                PSES AND PSNS EFFLUENT LIMITATIONS
                        ELECTRONIC CRYSTALS

Pollutant
Total Toxic Organics
Arsenic*
LTA
(mg/1)

0.51
30-day Average
VF Limit (mg/1)

1.62 0.83
Daily Maximum
VF Limit (mg/1)
1.37
4.09 2.09
  *  Arsenic limitations are applicable only to discharges from
     gallium arsenide and indium arsenide crystal manufacturing
     operations.

Both TTO and arsenic will be removed to a greater extent by BAT
than by biological treatment at well operated POTWs achieving
secondary treatment.  Effective solvent management can reduce TTO
by over 99 percent while a POTW will remove 13 to 97 percent of
these same pollutants.  Similarly, precipitation/clarification of
arsenic will remove over 92 percent of this pollutant while a
POTW will only remove 35 percent.  Therefore. PSES and PSNS are
required to prevent pass through.  For PSES; and PSNS. EPA is
promulgating limitations based on solvent management.
neutralization, and end-of-pipe precipitation/clarification
(Option 2) for the facilities which manufacture gallium or indium
arsenide crystals.  For facilities which only manufacture other
types of crystals, PSES and PSNS are based on solvent management
(Option 1).  Option 2 will assure control of arsenic in addition
to controlling.toxic organics.

The Agency is not promulgating pretreatment standards for
fluoride.  Fluoride is not a toxic pollutant under the Act and
EPA has more discretion concerning the establishment of
pretreatment standards for such pollutants.  In this particular
instance fluoride is not a pollutant of concern for indirect
dischargers.  The flow for the electronic crystals subcategory is
29.000 gallons per day and the concentration of fluoride in the
wastewater entering the POTW is 129 rug/9..  EPA's environmental
assessment, based on a substantial body of scientific literature,
shows that there is little likelihood of health or environmental
effects from the introduction of fluoride at these flows and
concentrations into a POTW.  For these reasons, EPA believes it
is not appropriate to establish nationally applicable categorical
pretreatment standards.
                               8-12

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PSES and PSNS limitations for electronic crystals producers are
the same as those for BPT except that pH and TSS are not
regulated for pretreatment.   The bases for limitations were
presented in Section 8.2.1.

8.3  STATISTICAL ANALYSIS

Statistical analysis of discharge monitoring data allows a
quantitative assessment of the variability of effluent concentra-
tions following wastewater treatment.  Long term data, collected
on a daily basis, reflect the fact that even properly operating
treatment systems experience fluctuations in pollutant concentra-
tions discharged.  These fluctuations result from variations in
process flow, raw waste loading of pollutants, treatment chemical
feed, mixing effectiveness during treatment, and combinations of
these or other factors.

It is found that the day-to-day variability in effluent concen-
trations includes occasional large changes while averages for
each month's data experience smaller fluctuations.  The vari-
ability in the monthly average is usually found to be well
described by the normal distribution, with values evenly distrib-
uted around the mean.  However, daily fluctuations are most often
described by a lognormal or asymmetric distribution.  This
reflects the fact that an effluent value may rise considerably
from the mean level, but may fall only to the value of zero.

In the development of effluent limitations and standards, allow-
ance for the variation in the effluent concentration of a pollu-
tant is accounted for by the establishment of a variability
factor which is always greater than 1.0.  This factor, calculated
based on the type of distribution of daily or monthly average
concentrations, is then multiplied by the mean pollutant concen-
tration to yield a performance standard or effluent limitation
that is reasonable for a particular treatment technology and a
particular type of waste.

The following paragraphs describe the statistical methodology
used to calculate the variability factors and to establish
limitations for pollutant concentrations.

8.3.1  Calculation of Variability Factors

Variability factors are used to account for effluent concentra-
tion fluctuations in the establishment of reasonable effluent
limitations.  Calculation of these factors is discussed here.
while their application is discussed under the next heading.

Daily Pollutant Level Measurements — These calculations were
based on the following three assumptions:  (1) the daily
                                 8-13

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 pollutant  concentration  data  are  lognormally distributed;  (2)
 monitoring was  conducted in a responsible  fashion,  such that the
 resulting  measurements can be considered statistically
 independent  and amenable to standard  statistical procedures; (3)
 treatment  facilities  and monitoring techniques were substantially
 constant throughout the  monitoring period.  The lognormality
 assumption is well established for daily sampling and has  been
 demonstrated in the analysis  of effluent samples from many
 industries.  The other two assumptions, which concern
 self-consistency of the  data,  were supported by direct
 examination  of  the data  and by consideration of supplemental
 information  accompanying the  data.

 The variability factor is especially  useful with lognormally dis-
 tributed pollutant levels because its value is independent of the
 long-term  average, and depends only upon the day-to-day
 variability  of  the treatment  process  and the expected number of
 unusually  high  discharge periods.  For a lognormal  population the
 variability  factor (P/A). the performance  standard  P. and  the
 long-term  average A,  are related  by

                      In  (P/A)  = S1(Z  - S'/2)

 where In represents the  natural logarithm, S' is the estimated
 standard deviation of the natural logarithms of pollutant  con-
 centrations, and  Z is a  factor derived from the standard normal
 distribution.

 The value  of Z  selected  for the calculation of daily performance
 standards  is 2.326, which corresponds to the 99th percentile of
 the lognormal distribution.   Thus only one percent  pollutant
 concentrations  is expected greater than the performance standard
 P.  This assumes  the  continued proper operation of  the wastewater
 treatment  procedures, and is  equivalent to allowing a plant in
 normal operation  3 or 4  exceedances per year.

 To estimate  the variability factor for a particular set of
 monitoring data, where the method of  moments is used. S' is
 calculated as the square  root  of  In (1.0 + (CV2)).  Here CV is
 the sample coefficient of variation,  and is the ratio of sample
 standard deviation to sample  mean.

 30-Day Averages of Pollutant  Levels — While individual pollutant
 concentrations are assumed to  be  lognormally distributed,  30-day
 averages are not assumed  to fit this  model.  Instead, the
 statistical  "Central Limit Theorem" provides justification for
using the normal distribution  as the  appropriate model.  Thus the
 30-day average values are expected to behave approximately as
 random data from a normal distribution, with mean A and standard
 deviation S''.
                                 8-14

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For any probability (k percent) that a particular monthly average
will not exceed the performance standard P. there corresponds a
value Z such that
                         P = A + Z (S1')

The variability factor is

                       P/A = 1.0 + Z(S''/A)

and is estimated by
                        P/A = 1.0 + Z(CV)

In this equation. Z is frequently given the value of 1.64. to
correspond with a probability, k. of 95 percent that a monthly
average is within guidelines.  CV is the estimated coefficient of
variation of the 30-day averages.  It may be computed by Sx/A.
where S is the standard deviation of sample measurements and x is
the mean of sample measurements.

Hence one obtains the performance standard P by multiplying the
mean of the 30-day averages by the variability factor.  An inter-
pretation is that for the selected value of Z =.1.64 correspond-
ing to the 95th percentile of a normal distribution. 19 of every
20 30-day averages will not exceed P.

8.3.2  Calculation of Effluent Limitations

The effluent limitations are based on the premise that a plant's
treatment system can be operated to maintain average (mean)
effluent concentrations equal to those determined from the
sampled data from visited plants.  As explained in the introduc-
tion, the day-to-day concentrations will fluctuate below and
above these average concentrations.  Thus the effluent daily
limitations must be set far enough above the average daily
concentrations that plants with properly operated treatment
systems will not exceed them (99 percent of the time), and the
30-day average limitations must be set sufficiently above the
mean of 30-day averages so that no more than 5 percent of 30-day
averages will exceed the limitations, again assuming a properly
operated treatment system.  The effluent limitations were
obtained for each parameter by multiplying the average concentra-
tion (based on visit data) by the appropriate daily and 30-day
variability factors (based on historical data) to obtain the
effluent limitations.  Expressed as equations.

                Daily maximum limitation = VFD x A
               30-day average limitation = VF3Q x A

In these equations, VFjj is the daily maximum variability
factor, VF30 is the 30-day average variability factor, and A is
the average concentration based on plant visit data.
                                 8-15

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                            SECTION 9

             COST OF WASTEWATER TREATMENT AND CONTROL


This section presents estimates of the costs of implementation of
wastewater treatment and control systems for the Semiconductor
and Electronic Crystals subcategories of the Electrical and
Electronic Components category.  The systems for which cost
estimates are presented are those options selected by the Agency
as the technical bases for discharge regulations as presented in
Section 8.  The cost estimates then provide the basis for
probable economic impact of regulation on the industry.

The general approach or methodology for cost estimating is
presented below followed by the treatment and control option
costs.  Finally, this section addresses non-water quality aspects
of wastewater treatment and control including air pollution.
noise pollution, solid wastes and energy considerations.

9.1  COST ESTIMATING METHODOLOGY

Costs involved in setting up and operating a wastewater treatment
unit are comprised of investment costs for construction, equip-
ment, engineering design, and land, and operating costs for
energy, labor, and chemicals.  There are also costs for disposing
of sludge and for routine analysis of the treated effluent.

The costs presented in this section are based on model plants
which closely resemble the types and capacities of waste
treatment facilities needed for each product subcategory.  Model
plants are not set up as exemplary plants, but as typical of
sufficient design to represent the range of plants and treatment
facilities present in the industry.  Data are based on plant
visits and contacts with industries to verify treatment practices
and to obtain data on size, wastewater flow, and solid waste
disposal systems.  The differences in treatment capacities are
reflected in the choice of model plants which are presented for
different flow rates covering the existing range of flows at
average concentrations of pollutants.

Unit process equipment costs were assembled from vendors and
other commercial sources.  Information on the costs of equipment.
the present costs of chemicals and average costs for hauling
sludge was developed with data from industry, engineering firms.
and equipment suppliers.  Appropriate factors were applied to
determine total investment costs and annual costs.
                               9-1

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The costs which will actually  be  incurred by an  individual plant
may be more or less than presented  in  the cost estimate.  The
major variations  in treatment  costs between plants result from
differences in pollutant concentrations and site dependent
conditions, as reflected in piping  lengths, climate, land
availability, water and power  supply,  and the location of the
point of final discharge.  In  addition, solids disposal costs and
material costs will vary depending  on  geographical locations.

The following assumptions were employed in the cost development:

     1.   All non-contact cooling water was excluded from
          treatment and treatment costs.  This source of
          wastewater is not covered by these regulations.

     2.   Source  water treatment, cooling tower and boiler
          blowdown discharges  were  not considered process
          wastewater.

     3.   Sanitary sewage flow is excluded.

     4.   The treatment facilities were assumed to operate 8
          hrs/per day, 260 days per year for small plants (below
          60.000  GPD); 24 hrs/day,  260 days per year for medium-
          sized plants (60.000 GPD  to  200,000 GPD); and 24
          hrs/day 350 days per year for large plants (greater
          than 200,000 GPD).   Treatment facilities operations are
          based on industry provided data.
.-
     5.   Excluded from the estimates  were any costs associated
          with permits, reports, or hearings required by
          regulatory agencies.

Investment costs  are expressed in end  of year 1979 dollars to
construct facilities at various wastewater flow rates.  Opera-
tion, maintenance, and amortization of the investment are
expressed as base level annual costs.

9.1.1  Direct Investment Costs for Land and Facilities

Types of direct investment costs for waste treatment facilities
and criteria for  estimating major components of the model plants
are presented below.

Construction Costs — Construction costs include site
preparation, grading, enclosures, buildings, foundations.
earthworks,  roads, paving,  and concrete.  Since few if any
buildings will be utilized, construction costs have been
                               9-2

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calculated using a factor of 1.15 applied to the installed
equipment cost or 2.0 applied to the equipment cost.

Equipment Cost — Equipment for wastewater treatment  consists of
a combination of items such as pumps,  chemical feed systems.
agitators, flocculant feed systems, tanks, clarifiers and
thickeners.  Cost tables for these items were developed from
vendor's quotations for a range of sizes, capacities, and motor
horsepowers.  Except for large size tanks and chemical storage
bins, the cost represents packaged, factory-assembled units.

Critical equipment is assumed to be installed in a weatherproof
structure.  Chemical storage feeders and feedback controls
include such items as probes, transmitters, valves, dust filters,
and accessories.  Critical pumps are furnished in duplicate as a
duty and a spare each capable of handling the entire  flow.

Installation Costs — Installation is. defined to include all
services, activities, and miscellaneous material necessary to
implement the described wastewater treatment and control system,
including piping, fittings, and electrical work.  Many factors
can impact the cost of installing equipment modules.   These
include wage rates, manpower availability, who does the job
(outside contractor or regular employees), new construction
versus modification of existing systems, and site-dependent
conditions (e.g.. the availability of sufficient electrical
service).  In these estimates, installation costs were chosen for
each model based upon average site conditions taking into
consideration the complexity of the system being installed.  An
appropriate cost is allowed for interconnecting piping, power
circuits and controls.

Monitoring Equipment — Monitoring equipment will be installed at
the treated effluent discharge point.   It will consist of an
indicating, integrating, and recording type flow meter. pH meter,
sensor, recorder, alarms, controls, and an automatic sampler.
This equipment will be used for the purpose of operating the
treatment system as well as complying with discharge requirements

Land — Land availability and cost of land can vary signifi-
ficantly, depending upon geographical location, degree of
urbanization and the nature of adjacent development.   Land for
waste treatment is assumed to be contiguous with the production
plant site.  For the purpose of the report land is valued at
$12,000 per acre.

Investment Costs for Supporting Services — Engineering design
and inspection are typical services necessary to advance a
project from a concept to an operating system.  Such services
broadly include laboratory and pilot plant work to establish
                               9-3

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 design  parameters,  site  surveys  to  fix  elevation  and plant
 layout,  foundation  and groundwater  investigation, and  operating
 instructions,  in  addition  to design plans,  specifications and
 inspection during construction.  These  costs, which vary with  job
 conditions, are often estimated  as  percentages of construction
 costs,  with typical  ranges as  follows:

     Preliminary  survey  and construction surveying        1 to 2%
     Soils and groundwater investigation                  1 to 2%
     Laboratory and  pilot  process work                    2 to 4%
     Engineering  design  and specifications                7 to 12%
     Inspection during construction                      2 to 3%
     Operation and maintenance manual                     1 to 3%
                                         TOTAL          14 to 26%

 From these totals of 14  to 26  percent,  a mid-value of  20 percent
 of  in-place construction (installed equipment and construction)
 cost has  been used  in this study to represent the engineering and
 design  cost applied  to model plant  cost estimates.

 The contractor's  fee and contingency, usually expressed as a
 percentage of  in-place construction cost, includes such general
 items as  temporary utilities,  small tools,  field office overhead
 and administrative expense.  The contractor is entitled to a
 reasonable profit on his activities and to  the cosjt of interest
 on  capital tied up during  construction.  Although not  all of the
 above cost will be incurred on every job, an additional 50
 percent  of the in-place  construction cost has been used to cover
 related  cost broadly described as contractor's fees, incidentals.
 overhead, and contingencies.

 9.1.2  Annual Costs

 Operation and Maintenance Costs  —  Annual operation and
 maintenance costs are described  and calculated as follows:

 Labor and Supervision Costs:

 Personnel costs are  based on an  hourly  rate of $20.00.  This
 includes  fringe benefits and an  allocated portion of costs for
management, administration, and  supervision.  Personnel are
assigned  for specific activities as required by the complexity of
the system, ranging  from 1-8 hours  per  day.

Energy Costs:

Energy costs are based on the  cost  of $306.00 per horsepower
operating 24 hours per day and 3SO  days per year.  For batch
processes appropriate adjustments were made to suit the
                               9-4

-------
production schedule.  The cost per horsepower year is computed as
follows:

             Cy = 1.1 (0.745 HP x Hr. x Ckw)/(E x P)

where     Cy = Cost per year
          HP = Total Horsepower Rating of Motor (1 HP = 0.7457 kw)
          E = Efficiency Factor (0.9)
          P = Power Factor (1.00)
          Hr. = Annual Operating Hours (350 x 24 = 8,400)
          Ckw = Cost per Kilowatt- Hour of Electricity ($0.040)

Note:  The 1.1 factor in the equation represents allowance for
incidental energy used such as lighting, etc.  It is assumed that
no other forms of energy are used in the waste treatment system.

Chemicals:

Prices for the chemicals were obtained from vendors and the
Chemical Marketing Reporter.  Unit costs of common chemicals
delivered to the plant site are based on commercial grade of the
strength or active ingredient percentage with prices as follows:

Hydrated Lime (Calcium Hydroxide) Bulk                   $80/ton

Flocculant                                               $ 2/lb


Maintenance:

The annual cost of maintenance is estimated as ten percent (10%)
of the investment cost, excluding land.

Taxes and Insurance:

An annual provision of three percent of the total investment cost
has been included for taxes and insurance.

Residual Waste Disposal:

Sludge disposal costs can vary widely.  Chief cost determinants
include the amount and type of waste.  Off-site hauling and
disposal costs are taken as $20/YD3  for bulk hauling, with
appropriate increases for small quantities in steel containers.
Information available to the Agency  indicates that the selected
treatment technologies for controlling pollutants in this
industry will not result in hazardous wastes as defined by RCRA.
(Solvents collected by solvent management will be subject to
RCRA; see Section 9.2.1 and Table 9-3 for EPA's discussion of
these costs.)
                               9-5

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Monitoring, Analysis,  and  Reporting

The  manpower  requirements  covered  by  the  annual  labor and
supervision costs  include  those  activities  associated with  the
operation  and maintenance  of  monitoring instruments, recorder,
and  automatic samplers as  well as  the taking  of  periodic grab
samples.   Additional costs for analytical laboratory services
haŤre been  estimated for each  subcategory  assuming  that sampling
takes place three  times a  week at  the point of discharge.   A cost
of $7,500/year has been used  for monitoring analyses and
reporting  for Option 2 and 3.

Amortization  — Amortization  of  capital costs  (investment costs)
are  computed  as follows:

                   CA  = B  (r(l+r)n)/((l+r)n-l)

where      CA  = Annual  Cost
           B = Initial  amount  invested excluding  cost of land
           r = Annual interest rate (assumed 13 percent)
           n = Useful life  in  years

The  multiplier for B in equation (1)  is often referred to as the
capital recovery factor and is 0.2843 for the assumed overall
useful life of 5 years.  No residual  or sludge value is assumed.

9.1.3  Items  Not Included  In  Cost  Estimate

Although specific plants may  encounter extremes  of climate, flood
hazards and lack of water,  the cost of model plants have been
estimated  for average  conditions of temperature, drainage,  and
natural resources.  It is  assumed  that any necessary site
drainage,  roads, water development, security, environmental
studies and permit costs are  already  included in production
facilities costs.  Therefore, the  model costs are only for
facilities, suppliers,  and  services directly related to the
treatment  and disposal of  waterborne  wastes, including land
needed for treatment and on-site sludge disposal.  Air pollution
control equipment is not included, except for dust collectors
associated with treatment, chemical transfer and feeding.  Raw
wastes from various sources are assumed to be delivered to  the
treatment  facility at  sufficient head to fill the influent
equalization  basin, and final effluent is discharged by gravity.
Cost of pumps, pipes,  lines,  etc., necessary to deliver raw
wastewater to the treatment plant  or  to deliver the treated
effluent to the point  of discharge are not included in the cost
estimates.
                               9-6

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9.2  COST ESTIMATES FOR TREATMENT AND CONTROL OPTIONS

Table 9-1 summarizes the treatment and control options selected
as the bases for effluent limitations and standards for the
semiconductor and electronic crystals subcategories.


             TABLE 9-1. TREATMENT AND CONTROL OPTIONS
                      SELECTED AS BASES FOR
                       EFFLUENT LIMITATIONS

  Subcategory               BPT    BAT    BCT/NSPS    Pretreatment

Semiconductors               1      313           1

Electronic Crystals          2      2      22          1+2


9.2.1  Option 1

This treatment option consists of neutralization of the plant
discharge and solvent management to control toxic organics.
Since all direct dischargers in both the semiconductor and
electronic crystals subcategories currently neutralize their
discharges, no costs of neutralization will be incurred by the
industry.  Costs associated with Option 1 result from the
collection of additional solvents and monitoring.  These costs
are explained below.

Many plants already meet the TTO limit.  Those plants that are
not already in compliance will have to improve the effectiveness
of their solvent management program.  EPA has assumed the real
costs of compliance for such plants are minimal.  Primarily, this
is because the costs are small increments above existing costs.
That is. a discharger who is currently handling and disposing
solvents contained in drums or tanks may have some additional
amounts of solvents to deal with.  He already would have incurred
the basic costs of setting up such systems.  However, to the
extent that there may be incremental costs they would be offset
by the resale value of the additional solvents.  Data in the
record show that resale of spent solvents is commonly practiced.

For monitoring. EPA has estimated the annual costs for 47 percent
of the plants to conduct quarterly monitoring.  It is difficult
to predict precisely how many plants will take advantage of the
certification alternative to monitoring, although we expect most
plants will want to do so.  For purposes of costing, based upon
our estimate that 53 percent of existing plants already meet the
toxic organic limit, we are assuming the same percentage, at a
minimum, will also choose to certify.  While it is difficult to
estimate monitoring frequency for total toxic organics in the
                               9-7

-------
absence of significant historical experience, based on a survey
of state and regional permitting authorities, we estimate that.
on average, monitoring for TTO will be required once per
quarter.  The costs for quarterly monitoring are presented in
Table 9-2.

In some cases plants may be required to monitor as frequently as
once a month.  Thus. EPA has done an economic sensitivity
analysis to assess the impact of monthly monitoring costs as part
of its economic impact analysis.  The capital and annual costs of
both quarterly and monthly monitoring for TTO. in 1983 dollars.
are presented in Table 9-2.

EPA has also performed an economic sensitivity analysis for RCRA
costs.  As stated above. EPA believes that minimal costs are
associated with TTO compliance.  Nevertheless. EPA has costed out
and assessed the economic impact if plants presently not in
compliance sent the additional solvents to hazardous waste
disposal facilities covered by the Resource Conservation and
Recovery Act.  These costs represent the worst case compliance
costs associated with solvent management.  They are presented in
1983 dollars in Table 9-3.

9.2.2  Option 2

The capital and annual costs of adding this end-of-pipe
precipitation/clarification system to Option 1 treatment are
presented in Table 9-4.  The range of model plant wastewater
flows reflect the range of flows that currently exist for the
subcategory.  Figure 9-1 graphically presents the annual costs
versus plant wastewater flow for this option.  The costs are
incremental and therefore .only reflect the additional costs of
adding end-of-pipe precipitation/clarification technology to
Option 1 technology.

9.2.3  Option 3

The capital and annual costs of adding this in-plsint precipita-
tion/clarification treatment system for fluoride acid wastes to
Option 1 treatment are presented in Table 9-5.  The range of
model plant waste flows reflect the range of flows for this
stream as they currently exist in both subcategories.  Figure 9-2
graphically presents the annual costs versus waste stream flow
for this option.  The costs are incremental and therefore only
reflect the additional costs of adding in-plant precipitation/
clarification technology to Option 1 technology.

9.2.4  Option 5

The capital and annual costs of adding filtration to end-of-pipe
precipitation/clarification (Option 2) are presented in Table
                               9-8

-------
9-6.  These costs are incremental and therefore only reflect the
additional costs of adding filtration technology to Option 2
technology.

9.3  ENERGY AND NON-WATER QUALITY ASPECTS

Compliance with the proposed regulations will have no effect on
air. noise, or radiation pollution and will only result in
minimal energy usage.  The amount of solid waste generated will
be 7.700 metric tons per year.  Available information indicates
that the solid waste generated will not be hazardous as defined
in the Resource Conservation and Recovery Act (RCRA).  Energy
requirements associated with these regulations will be 100.000
kilowatt-hours per year or only 7.5 kilowatt-hours per day per
facility.

Based on the absence of any significant non-water quality impacts
from these regulations, EPA has concluded that the regulations
best serve overall national environmental goals.
                               9-9

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                            TABLE 9-2

                      PLANT MONITORING COSTS
                         FOB ORGAN ICS CD
INVESTMENT COSTS

     Automatic Sampler - Complete          $ 2.500       $ 2.500

     TOTAL INVESTMENT COST                 $ 2,500       $ 2.500


ANNUAL COSTS                               Quarterly     Monthly

     Analysis Cost              $ 860      $ 3.440       $ 10.320
     Sample kit                 $  50          200            600
     Sampling personnel
     @ $22/hr x 8 hrs/eplsode   $ 176          704       $  2,112

     TOTAL OPERATION AND
     MAINTENANCE COST                      $ 4,344       $ 13.032

     AMORTIZATION OF
     INVESTMENT COST                            711           711

     TOTAL ANNUAL COST                     $  5.055      $ 13.743
(1)   1983 Dollars
                               9-10

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                         TABLE 9-3




INCREMENTAL COST OF SOLVENT DISPOSAL IN ACCORDANCE WITH RCRA




                          OPTION 1
Plant Number










(ť
(2
(3
02040
02347
04294
04296
06143
35035
41061
304
404
308
Number of
Gal/ 90 Days^1) 55 gal drums
193.4
1921
798
12,4
85.7<Ť>
15.7(3)
210.8
190.4
72.8
69.7
) Based on a 24 hour/production day
and days per year.
} Disposal cost is based on a 1983
) 3-day sampling average.
4
35
15
1
2
1
4
4
2
Disposal Transportation Total Qrtly
Cost ($) Cost ($) Cost ($)
400
3500
1500
100
200
100
400
400
200
2 200
, 250 days production per year
estimate from an EPA-approved
200
200
200
200
200
200
200
200
200
200
; however
disposal
600
3700
1700
300
400
300
600
600
400
400
, some plants operate
facility.
Total Year
Cost ($} (2)
2400
14800
6800
1200
1600
1200
2400
2400
1600
1600
less hours per day.

-------
                                         TABLE 9-4
                                MODEL PLANf TREATMENT COSTS
                                          OPTION 2
                                                    Flow, gpd (1/da.y)
A.  INVESTMENT COSTS

    Construction
    Equipment in place
     including piping,
     fittings, electrical
     work and controls
    Monitoring equipment
     in place
    Engineering design
     and inspection
    Incidentals, overhead,
     fees, contingencies
    Land

    TOTAL INVESTMENT COST

B.  OPERATION AND
    MAINTENANCE COST

    Labor and supervision
    Energy
    Chemicals
    Maintenance
    Taxes and insurance
    Residual waste
     disposal
    Monitoring, analysis
     and reporting

    TOTAL OPERATION AND
    MAINTENANCE COST

C.  AMORTIZATION OF
    INVESTMENT COST

    TOTAL ANNUAL COST
2,000
(7,570)
$ 2,500
28,000
6,000
6,500
15,500
3,000
$61,500
11,000
600
200
6,000
2,000
1,500
7,500
$28.800
16,632
$45.432
10,000
(37,850)
$ 7,000
83,000
6,000
18,000
45,000
3,000
$162,000
11,000
1,000
1,100
16,000
5,000
8,500
7,500
$50.100
45,206
$95.306
60,000
(227,000)
$ 12,000
142,000
6,000
31,000
77,000
6,000
$274,000
11,000
5,000
4,000
27,500
8,500
52,000
7,500
$115,500
76,196
$191.696
150,000
(568,000)
$ 17,000
202,500
6,000
44,000
110,000
6,000
$385.500
11,000
6,000
9,500
38,000
12,000
108,000
7,500
$192,000
107,897
$399.897
200,000
(757,000)
$ 20,200
244,600
6,000
53,000
132,500
6,000
$462.300
11,000
7,000
12,500
46,000
13,800
128,500
7,500
$226.300
129,733
$356.033
                                          9-12

-------
                                     -g
                                     _g
                                                *    Ł
                                               si  •  ":
                                               *    >
                                                     <

                                                     SS

                                                     <
(OOCTOIS) 1503 IVflNNV
                       9-13

-------
                                   TABLE 9-5
                          MODEL PLANf TREATMEMT COSTS
                                    OPTION 3
                                     Fluoride Stream Flow, gpd (I/day)
A.  INVESTMENT COSTS

    Construction
    Equipment in place
     including piping,
     fittings, electrical
     work and controls
    Monitoring equipment
     in place
    Engineering design
     and inspection
    Incidentals, overhead,
     fees, contingencies
    Land

    TOTAL INVESTMENT COST

B.  OPERATION AND
    MAINTENANCE COST

    Labor and supervision
    Energy
    Chemicals
    Maintenance
    Taxes and insurance
    Residual waste
     disposal
    Monitoring, analysis
     and reporting

    TOTAL OPERATION AND
    MAINTENANCE COST

C,  AMORTIZATION OF
    INVESTMENT COST

    TOTAL ANNUAL COST
100
(378)
$ 3,300
40,600
0
8,800
8,800
0
$61.500
5,000
50
200
3,100
1,900
700
1,200
$12,150
17,500
$29,650
500
(1,890)
$ 3,300
40,600
0
8,800
8,800
0
$ 61.500
20,000
200
1,000
3,100
1,900
3,500
1,200
$30,900
17,500
$48.400
2,500
(9,460)
$ 5,500
67,200
0
14,500
14,500
0
1101.700
20,000
350
5,000
5,100
3,050
17 , 500
1,200
$52.200
28,900
$81.100
6,000
(22,700)
$ 10,100
121,900
0
19,800
26,400
0
$178.200
20,000
700
12,000
8,900
5,300
42,000
1,200
$90.100
50,700
$140.800
                                      9-14

-------
I     1      I
                                                              e
                                                              z
                                                              x
                                                              o
                                                     LU
                                                     ee
                                                              Z
                                                              e
e
oc
e
                                                     ec
                                                     a
                                                     a
                                                     t_5
                                                     Z
                                                     O
e
o
—i
<

z
z
<
                                                               en

                                                               UJ
                                                               ec
                                                               a
                                                               C9
1     I       I

o    o     o
O    ee     IB
(000LS) 1SOO
                9-15

-------
                                         fABLE 9-6
                                MODEL PLANT TREATMENT COSTS
                                OPTION 5, INCREMENTAL COSTS
A.  INVESTMENT COSTS

    Construction
    Equipment in place
      including piping,
      fittings, electrical
      work and controls
    Monitoring equipment
      in place
    Engineering design
      and inspection
    Incidentals, overhead,
      fees, contingencies
    Land

    TOTAL INVESTMENT COST

B.  OPERATION AND
    MAINTENANCE COST

    Labor and supervision
    Energy
    Chemicals
    Maintenance
    Taxes and insurance
    Residual waste
      disposal
    Monitoring, analysis
      and reporting

    TOTAL OPERATION AND
    MAINTENANCE COST

C.  AMORTIZATION OF
    INVESTMENT COST

    TOTAL ANNUAL COST
                                2,000
                                (7,570)
  $ 700



  6,700



  1,500

  3,700


$12.600
  2,000
    300

  1,260
    380
                      Flow, gpd (I/day)
              10,000       60,000      150,000
             (37,850)    (227,000)    (568,000)
$ 800      $ 1,600
7,900
16,000
            $ 3,300
33,000
1,700
4,400
.4,800
2,000
500
1,480
440
3,500
8,800
129 . 90Q
3,000
2,500
3,000
900
7,200
18,200
$61,700
4,000
3,000
6,200
1,850
              	       	      $15.050


  3,580        4,210        8,500       17,540

 E7.520       $8.630      $17.900      $32.590
                                     200,000
                                    (757,000)
$ 3,800



 38,000



  8,400

 20,900


$71.100
                                       4,000
                                       3,500

                                       7,100
                                       2,130
                                     $16.730


                                      20,210

                                     $36.940
                                            9-16

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                              SECTION 10

                           ACKNOWLEDGMENTS


The Environmental Protection Agency was aided in the preparation of
this Development Document by Versar Inc. and Jacobs Engineering
Group, Inc.  Versar's effort was managed by Mr. Lawrence G. Davies.
with the assistance of Ms. Jean Moore.  Jacob's effort was managed
by Ms. Bonnie Parrott. with the assistance of Mr. Bob Mueller.

Mr. Richard Kinch served as Project Officer and Mr. David Pepson
served as the Technical Project Officer during the preparation of
this document.  Mr. Jeffrey Denit. Acting Director, Effluent
Guidelines Division,  and Mr. Gary E. Stigall, Branch Chief, Effluent
Guidelines Division.  Inorganic Chemicals Branch, offered guidance
and suggestions during this project.
                                 10-1

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                             SECTION 11

                             REFERENCES


 1.   Amick.  Charles L..  Fluorescent Lighting Manual.  McGraw-Hill.
     3rd.  ed..  (1961).

 2.   Baumann.  E.R.. Diatomite Filtration of Potable Water.
     American Water Works Association,  Inc.

 3.   Beau.  R.L. et al..  Transformers for the Electric Power
     Industry.  McGraw-Hill (1959).

 4.   Bogle.  W.S..  Device Development, The Western Electric
     Engineer,  (July 1973).

 5.   Burock. R. et al..  Manufacturing Beam Lead. Insulated  Gate.
     Field Effect  Transistor Integrated Circuits. Bell
     Laboratories  Record. (Jan. 1975).

 6.   Cockrell.  W.D.. Industrial Electronics Handbook. McGraw-Hill
     (1958).

 7.   Culver. R.H.. Diatomaceous Earth Filtration. Chemical
     Engineering.  Vol.  17. No. 12 (Dec. 1975).

 8.   Elenbaas,  W.. Fluorescent Lamps and Lighting. (1959).

 9.   EPA.  Final Rule Polychlorinated Biphenvls Manufacturing.
     Processing.  Distribution in Commerce, and Use Prohibition.
     Federal Register.  (May 31. 1979).  Part IV.

10.   EPA.  Support  Document/Voluntary Environmental Impact
     Statement and PCS  Ban Economic Impact Analysis.  EPA Office of
     Toxic Substances Report. (April. 1979).

11.   Forsythe.  William E.. Fluorescent and Other Gaseous Discharge
     Lamps.  (1948).

12.   Funer.  R.E..  Letter to Robert Schaeffer. EPA Effluent
     Guidelines Div., E.I. DuPont de Nemours and Company.
     Subject:   Priority pollutant removal from wastewater by the
     PACT process  at the Chambers Works.

13.   Gerstenberg,  D. and J. Klerer. Anodic Tantalum Oxide
     Capacitors From Reactively Sputtered Tantalum. 1967
     Proceedings,  Electronic Components Conference, Sponsored by
     IEEE,  EIA.
                                 11-1

-------
14.  Gray. H.J.. Dictionary  of Physics. Longmans. Green and Co..
     London  (1958).

15.  Henney. K. and C. Walsh. Eds.. Electronic Components
     Handbook. McGraw-Hill  (1975).

16.  Hewitt. Harry. Lamps and Lighting. American Elsevier
     Publishing Co..  (1966).

17.  Hiyama. S. et al..  3500 uFV Wound-Foil Type Aluminum Solid
     Electrolytic Capacitors. 1968 Proceedings. Electronic
     Components Symposium, Sponsored  by IEEE, EIA.

18.  IBM. S/C Manufacturing  Overview.  IBM. East Fishkill. N.Y.

19.  IEEE Standards Committee, IEEE.  Standard Dictionary of
     Electrical and Electronic Terms.  J. Wiley and Sons, (Oct.
     1971).

20.  Illuminating Engineering Society, IBS Lighting Handbook. 3rd
     ed.. (1962).

21.  Jowett, C.E.. Electronic Engineering Processes. Business
     Books. Ltd.. (1972).

22.  Kirk and Othmer. Encyclopedia of  Chemical Technology. Vol.
     17. McGraw-Hill. (1968).

23.  Knowlton, A.E..  Standard Handbook for Electrical Engineers.
     McGraw-Hill. (1957).

24.  McGraw-Hill, Dictionary of Scientific and Technical Terms.
     2nd Ed.. McGraw-Hill (1978).

25.  McGraw-Hill. Encyclopedia of Science and Technology.
     McGraw-Hill (1960).

26.  Mclndoe. R.W.. Diatoroite Filter Aids. Pollution Engineering
     Magazine.

27.  Motorola. Small  Signal  Wafer PRocessing. Motorola. Phoenix.
     AZ.

28.  Oldhara, W.G.. The Fabrication of Microelectronic Circuits.
     Scientific American (Sept..  1977).

29.  Phillips, A.B.E, Transistor Engineering. McGraw-Hill. (1962).

30.  Puchstein. A.F.  et al.. Alternating Current Machines. J.
     Wiley,  (1954).
                                 11-2

-------
31.   Transformer Consultants, Why Annual Transformer Oil Testing.
     The Consultor, Transformer Consultants, P.O. Box 3575, Akron,
     Ohio.  44310 (1978).

32.   U.S. Department of Commerce. Bureau of the Census, 1977
     Census of Manufactures. Preliminary Statistics. Bureau of the
     Census Reports No. MC 77-1-36 for SIC 3600-3699 Issued 1979.

33.   U.S. Government, Public Law 94-469 Toxic Substances Control
     Act. (Oct. 11. 1976).

34.   Webster's Seventh New CollegiateDictionary, G & C Merriam
     Co.. (1963).
                                 11-3

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                             SECTION 12

                              GLOSSARY


Absorb - To take up matter or radiation.

Act - Federal Water Pollution Control Act.

Activate - To treat the cathode or target of an electron tube in
     order to create or increase the emission of electrons.

Adjustable Capacitor - A device capable of holding an electrical
     charge at any one of several discrete values.

Adsorption - The adhesion of an extremely thin layer of molecules
     (of gas. liquid) to the surface of solids (granular activated
     carbon for instance) or liquids with which they are in
     contact.

Aging - Storage of a permanent magnet, capacitor, meter or other
     device (sometimes with a voltage applied) until the
     characteristics of the device become essentially constant.

Algicide -  Chemicals used to retard the growth of phytoplankton
     (algae) in bodies of water.

Aluminum Foil - Aluminum in the form of a sheet of thickness not
     exceeding 0.005 inch.

Anneal - To treat a metal, alloy, or glass by a process of heating
     and slow cooling in order to remove internal stresses and to
     make the material less brittle.

Anode - The collector of electrons in an electron tube.  Also known
     as plate; positive el~ectrode.

Anodizing - An electrochemical process of controlled aluminum
     oxidation producing a hard, transparent oxide up to several
     mils in thickness.

Assembly or Mechanical Attachment - The fitting together of pre-
     viously manufactured parts or components into a complete
     machine, unit of a machine, or structure.

Autotransformer - A power transformer having one continuous wind-
     ing that is tapped; part of the winding serves as the primary
     coil and all of it serves as the secondary coil, or vice
     versa.
                                 12-1

-------
Ballast - A circuit element that serves to  limit an electric
     current or to provide a starting voltage, as in certain types
     of lamps, such as  in fluorescent ceiling fixtures.

Binder - A material used to promote  cohesion between particles of
     carbon or graphite to produce solid carbon and graphite rods
     or pieces.

BJ.ochemica1 Oxyge n Demand (BOD) -  (1) The quantity of oxygen used
     in the biochemical oxidation of organic matter in a specified
     time, at a specified temperature, and  under specified
     conditions.  (2) Standard test  used in assessing wastewater
     quality.

Biodegradable - The part of organic  matter  which can be oxidized by
     bioprocesses, e.g., biodegradable detergents, food wastes,
     animal manure, etc.

Biological Wastewater Treatment - Forms of  wastewater treatment in
     which bacteria or  biochemical action is intensified to
     stabilize, oxidize, and nitrify the unstable organic matter
     present.  Intermittent sand filters, contact beds, trickling
     filters, and activated sludge processes are examples.

Breakdown Voltage - Voltage at which a discharge occurs between two
     electrodes.

Bulb - The glass envelope which incloses an incandescent lamp or an
     electronic tube.

Busbar - A heavy rigid, metallic conductor, usually uninsulated,
     used to carry a large current or to make a common connection
     between several curcuits.

Bushing - An insulating structure including a central conductor, or
     providing a central passage for a conductor, with provision
     for mounting on a  barrier (conducting  or otherwise), for the
     purpose of insulating the conductor from the barrier and
     conducting current from one side of the barrier to the other.

Calcining - To heat to  a high temperature without melting or
     fusing, as to heat unformed ceramic materials in a kiln, or
     to heat ores, precipitates, concentrates or residues so that
     hydrates, carbonates or other compounds are decomposed and
     volatile material  is expelled, e.g., to heat limestone to
     make lime.

Calibration - The determination, checking,  or correction of the
     graduation of any  instrument giving quantitative measurements.
                                 12-2

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Capacitance - The ratio of the charge on one of the plates of a
     capacitor to the potential difference between the plates.

Capaci tor - An electrical circuit element used to store charge tem-
     porarily, consisting in general of two conducting materials
     separated by a dielectric material.

Carbon - A nonmetallic. chiefly tetravalent element found native or
     as a constituent of coal, petroleum, asphalt, limestone, etc.

Cathode - The primary source of electrons in an electron tube; in
     directly heated tubes the filament is the cathode, and in
     indirectly heated tubes a coated metal cathode surrounds a
     heater.

Cathode Ray Tube - An electron-beam tube in which the beam can be
     focused to a small cross section on a luminescent screen and
     varied in position and intensity to produce a visible pattern.

Central Treatment Facility - Treatment plant which co-treats
     process wastewaters from more than one manufacturing
     operation or co-treats process wastewaters- with noncontact
     cooling water or with non-process wastewaters (e.g., utility
     blow-down, miscellaneous runoff, etc.).

Centrifuge -.The removal of water in a sludge and water slurry by
     introducing the water and sludge slurry into a centrifuge.
     The sludge is driven outward with the water remaining near
     the center.  The dewatered sludge is usually landfilled.

Ceramic - A product made by the baking or firing of a nonmetallic
     mineral such as tile, cement, plaster, refractories, and
     brick.

Chemi cal Coagu1ation - The destabilization and initial aggregation
     of colloidal and finely divided suspended matter by the
     addition of a floe-forming chemical.

Chemical Oxidation - The addition of chemical agents to wastewater
     for the purpose of oxidizing pollutant material, e.g..
     removal of cyanide.

Chemical Oxycren Demand (COD) - (1) A test based on the fact  that
     all organic compounds, with few exceptions, can be oxidized
     to carbon dioxide and water by the action of strong oxidizing
     agents under acid conditions.  Organic matter is converted to
     carbon dioxide and water regardless of the biological
                                  12-3

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      assimilability  of  the  substances.   One  of  the  chief
      limitations  is  its inability to  differentiate  between
      biologically oxidizable  and  biologically inert organic
      matter.   The major advantage of  this  test  is the  short  time
      required  for evaluation  (2 hours).   (2) The amount of oxygen
      required  for the chemical oxidation of  organics in a liquid.

'Chemical  Precipitation  - (1)  Formation  of  insoluble materials
      generated by addition  of chemicals to a solution.   (2)  The
     • process of softening water by the  addition of  lime and  soda
      ash  as the precipitants.

 Chlori.nation - The application of chlorine to water or wastewater
      generally for the  purpose of disinfection, but frequently for
      accomplishing other biological or  chemical results,

 Circuit Breaker - Device capable  of making,  carrying,  and breaking
      currents  under  normal  or abnormal  circuit  conditions.

 Cleaning  - The removal  of soil and dirt (including  grit and  grease)
      from a workpiece using water with  or  without a detergent or
      other dispersing agent.

 Coil  - A  number of turns of wire  used to introduce  inductance into
      an electric  circuit, to  produce  magnetic flux,  or to react
      mechanically to a  changing magnetic flux.

 Coil-Core Assembly - A  unit made  up of  the coil windings of  a
      transformer  placed over  the  magnetic  core.

 Coking -  (1) Destructive distillation of coal to make  coke.  (2) A
      process for  thermally  converting the  heavy residual bottoms
      of crude  oil entirely  to lower-boiling petroleum products and
      by-  product  petroleum  coke.

 Colloids  - A finely  divided dispersion  of  one material called the
      "dispersed phase"  (solid) in another  material  called the
      "dispersion  medium"  (liquid).  Normally negatively charged.

 Composite Wastewater Sample - A combination of  individual samples
      of water  or  wastewater taken at  selected intervals and  mixed
      in proportion to flow  or time to minimize  the  effect of the
      variability  of  an  individual sample.

 Concentric Windings  - Transformer windings in which the low-voltage
      winding is in the  form of a  cylinder  next  to the core,  and
      the  high-voltage winding, also cylindrical, surrounds the
      low-voltage  winding.
                                 12-4

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Conductor - A wire, cable, or other body or medium suitable for
     carrying electric current.

Conduit - Tubing of flexible metal or other material through which
     insulated electric wires are run.

Contamination - A general term signifying the introduction into
     water of microorganisms, chemicals, wastes or sewage which
     renders the water unfit for its intended use.

Contractor Removal - The disposal of oils, spent solutions, or
     sludge by means of a scavenger service.

Conversion Coating - As metal-surface coating consisting of
     compound of the base metal.

Cooling Tower - A device used to cool manufacturing process water
     before returning the water for reuse.

Copper - A common, reddish, chiefly univalent and bivalent metallic
     element that is ductile and malleable and one of the best
     conductors of heat and electricity.

Core (Magnetic Core) - A quantity of ferrous material placed in a
     coil or transformer to provide a better path than air for
     magnetic flux, thereby increasing the inductance of the coil
     or increasing the coupling between the windings of a
     transformer.

Corona Discharge - A discharge of electricity appearing as a
     bluish-purple glow on the surface of and adjacent to a
     conductor when the voltage gradient exceeds a certain
     critical value; caused by ionization of the surrounding air
     by the high voltage.

Curing - A heating/drying process carried out in an elevated-
     temperature enclosure.

Current Carrying Capacity - The maximum current that can be
     continuously carried without causing permanent deterioration
     of electrical or mechanical properties of a device or
     conductor.

Dag (Aguadaq) - A conductive graphite coating on the inner and
     outer side walls of some cathode-ray tubes.

Deqreasing - The process of removing grease and oil from the
     surface of the basis material.

Dewatering - A process in which water is removed from sludge.
                                 12-5

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Dicing - Sawing or otherwise machining a semiconductor wafer into
     small squares or dice from which transistors and diodes can
     be fabricated.

pie - A tool or mold used to cut shapes to or form impressions on
     materials such as metals and ceramics.

Die Cutting  (Also Blanking) - Cutting of plastic or metal sheets
     into shapes by striking with a punch.

Dielectric - A material that is highly resistant to the conductance
     of electricity; an insulator,

Di-n-octyl-phthalate - A liquid dielectric that is presently being
     substituted for a PCS dielectric fluid.

Diode (Semiconductor). (Also Crystal Diode. CrystalRectifier) - A
     two-electrode semiconductor device that utilizes the
     rectifying properties of a p-n junction or point contact.

Discrete Device - Individually manufactured transistor, diode, etc.

Dissolved Solids - Theoretically the anhydrous residues of the dis-
     solved constituents in water.  Actually the term is defined
     by the method used in determination.  In water and wastewater
     treatment, the Standard Methods tests are used.

Distribution Transformer - An element of an electric distribution
     system located near consumers which changes primary distribu-
     tion voltage to a lower consumer voltage.

Dopant - An impurity element added to semiconductor materials used
     in crystal diodes and transistors.

Dragout - The solution that adheres to the part or workpiece and is
     carried past the edge of the tank.

Dry Electrolytic Capacitor - An electrolytic capacitor with a paste
     rather than liquid electrolyte.

Drying Beds - Areas for dewatering of sludge by evaporation and
     seepage.

Dry Slug - Usually refers to a plastic-encased sintered tantalum
     slug type capacitor.
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Dry Transformer - Having the core and coils neither impregnated
     with an insulating fluid nor immersed in an insulating oil.

Effluent - The quantities, rates, and chemical, physical.
     biological and other constituents of waters which are
     discharged from point sources.

Electrochemical Machining - Shaping of an anode by the following
     process:  The anode and cathode are placed close together and
     electrolyte is pumped into the space between them.  An
     electrical potential is applied to the electrodes causing
     anode metal to be dissolved selectively, producing a shaped
     anode that complements the shape of the cathode.

Electrolyte - A nonmetallic electrical conductor in which current
     is carried by the movement of ions.

Electron Beam Lithography - Similar to photolithography - A fine
     beam of electrons is used to scan a pattern and expose an
     electron-sensitive resist in the unmasked areas of the object
     surface. ,

Electron Discharge Lamp - An electron lamp in which light is
     produced by passage of an electric current through a metallic
     vapor or gas.

Electron Gun - An electrode structure that produces and may
     control, focus, deflect and converge one or more electron
     beams in an electron tube.

Electron .Tube - An electron device in which conduction of
     electricity is accomplished by electrons moving through a
     vacuum or gaseous medium within a gas-tight envelope.

Electroplating - The production of a thin coating of one metal on
     another by electrode position.

Emissiye Coating - An oxide coating applied to an electrode to en-
     hance the emission of electrons.

Emulsion Breaking - Decreasing the stability of dispersion of one
     liquid in another.

End-of-Pipe Treatment - The reduction and/or removal of pollutants
     by chemical treatment just prior to actual discharge.

Epitaxial Layer - A (thin) semiconductor layer having the same
     crystaline orientation as the substrate on which it is grown.
                                 12-7

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Epitaxial Transistor - Transistor with one or more epitaxial
     layers.

Equalization - The process whereby waste streams from different
     sources varying in pH, chemical constituents, and flow rates
     are collected in a common container.  The effluent stream
     from this equalization tank will have a fairly constant flow
     and pH level, and will contain a homogeneous chemical
     mixture.  This tank will help to prevent unnecessary shock to
     the waste treatment system.

Etch - To corrode the surface of a metal in order to reveal its
     composition and structure.

Extrusion - Forcing the carbon-binder-mixture through a die under
     extreme pressure to produce desireable shapes and
     characteristics of the piece.

Field-effect Transistors - Transistors made by the metal-oxide-
     semiconductor (MOS) technique, differing from bipolar ones in
     that only one kind of charge carrier is active in a single
     device.  Those that employ electrons are called n-MOS
     transistors; those that employ holes are p-MOS transistors.

Filament - (1) Metallic wire which is heated in an incandescent
     lamp to produce light by passing an electron current through
     it.  (2) A cathode in a fluorescent lamp that emits electrons
     when electric current is passed through it.

Filtering Capacitor - A capacitor used in a power-supply filter
     system to provide a low-reactance path for alternating
     currents and thereby suppress ripple currents, without
     affecting direct currents.

Flaced Capacitor - A capacitor having a definite capacitance value
     that cannot be adjusted.

FloatGauge - A device for measuring the elevation of the surface
     of a liquid, the actuating element of which is a buoyant
     float that rests on the surface of the liguid and rises or
     falls with it.  The elevation of the surface is measured by a
     chain or tape attached to the float.

Floe - A very fine, fluffy mass formed by the aggregation of fine
     suspended particles.
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Flocculation - In water and wastewater treatment, the agglomeration
   " 'of colloidal and finely divided suspended matter after
     coagulation by gentle stirring by either mechanical or
     hydraulic means.  In biological wastewater treatment where
     coagulation is not used, agglomeration may be accomplished
     biologically.

Flocculator - An apparatus designed for the formation of floe in
     water or sewage.

Flow-proportioned Sample - A sampled stream whose pollutants are
     apportioned to contributing streams in proportion to the flow
     rates of the contributing streams.

Fluorescent Lamp - An electric discharge lamp in which phosphor
     materials transform ultraviolet radiation from mercury vapor
     ionization to visible light.

Forming - Application of voltage to an electrolytic capacitor,
     electrolytic rectifier or semiconductor device to produce a
     desired permanent change in electrical characteristics as
     part of the manufacturing process.

Frit Seal - A seal made by fusing together metallic powders with a
     glass binder for such applications as hermatically sealing
     ceramic packages for integrated circuits.

Funnel - The rear, funnel-shaped portion of the glass enclosure of
     a cathode ray tube.

Fuse - Overcurrent protective device with a circuit-opening fusible
     part that would be heated and severed by overcurrent passage.

Gate - One of the electrodes in a field effect transistor.

Getter - A metal coating inside a lamp which is activated by an
     electric current to absorb residu'al water vapor and oxygen.

Glass - A hard, amorphous, inorganic, usually transparent, brittle
     substance made by fusing silicates, and sometimes borates and
     phosphates, with certain basic oxides and then rapidly
     cooling to prevent crystallization.

Glow Lamp - An electronic device, containing at least two
     electrodes and an inert gas, in which light is produced by a
     cloud of electrons close to the negative electrode when a
     voltage is applied between the electrodes.

Grab Sample - A single sample of wastewater taken at an "instant"
     in time.
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Graphite  - A  soft black  lustrous carbon  that conducts electricity
     and  is a constituent of coal, petroleum, asphalt, limestone.
     etc.

Grease. -  In wastewater,  a group of substances including fats,
     waxes, free fatty acids, calcium and magnesium soaps, mineral
     oil  and  certain other nonfatty materials.  The type of
     solvent  and method  used for extraction should be stated for
     quantification.

Grease Skimmer - A device for removing grease or scum from the
     surface  of wastewater in a tank.

Green Body -  An unbaked  carbon rod or piece that is usually soft
     and  quite easily broken.

Grid - An electrode located between the  cathode and anode of an
     electron tube, which has one or more openings through which
     electrons or ions can pass, and which controls the flow of
     electrons from cathode to anode.

Grinding  - The process of removing stock from a workpiece by the
     use  of abrasive grains held by a rigid or semi-rigid binder.

Hardness  - A  characteristic of water, imparted by calcium,
     magnesium, and ion  salts such as bicarbonates, carbonates,
     sulfates, chlorides, and nitrates.  These cause curdling of
     soap, deposition of scale in boilers, damage in some
     industrial processes and sometimes  objectionable taste.
     Hardness may be determined by a standard laboratory procedure
     or computed from the amounts of calcium and magnesium as well
     as iron, aluminum, manganese, barium, strontium, and zinc,
     and  is expressed as equivalent calcium carbonate.

Heavy Metals  - A general name given to the ions of metallic
     elements such as copper, zinc, chromium, and nickel.  They
     are  normally removed from wastewater by an insoluble
     precipitate (usually a metallic hydroxide).

Holding Tank  - A reservoir to contain preparation materials so as
     to be ready for immediate service,

Hybrid Integrated Circuits - A circuit that is part integrated and
     part discrete.

Impact Extrusion - A cold extrusion process for producing tubular
     components by striking a slug of the metal, which has been
     placed in the cavity of the die. with a punch moving at high
     velocity.
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Impregnate - To force a liquid substance into the spaces of  a
     porous solid in order to change its properties.

Incandescent Lamp - An electric lamp producing light  in which  a
     metallic filament is heated white-hot  in a vacuum by passage
     of an electric current through it.

Industrial Wastes - The liquid wastes from  industrial processes  as
     distinct from domestic or sanitary wastes.

Influent - Water or other liquid, either raw or partly treated.
     flowing into a reservoir basin or treatment plant.

In-Process Control Technology - The regulation and conservation  of
     chemicals and rinse water at their point of use  as opposed  to
     end-of-pipe treatment.

Insulating Paper - A standard material for  insulating electrical
     equipment, usually consisting of bond  or kraft paper coated
     with black or yellow insulating varnish on both  sides.

Insulation (Electrical Insulation) - A material having high elec-
     trical resistivity and therefore suitable for separating
     adjacent conductors in an electric circuit or preventing
     possible future contact between conductors.

Insulator - A nonconducting support.for an  electric conductor.

Integrated Circuit - Assembly of electronic devices interconnected
     into circuits.

Interleaved Winding - An arrangement of winding coils around a
     transformer core in which the coils are wound in the form of
     a disk, with a group of disks for the  low-voltage windings
     stacked alternately with a group of disks for the
     high-voltage windings.

Intermittent Filter - A natural or artificial bed of  sand or other
     fine-grained material onto which sewage is intermittently
     flooded and through which it passes, with time allowed for
     filtration and the maintenance of aerobic conditions.

Ion Exchange - A reversible chemical reaction between a solid  (ion
     exchanger) and a fluid (usually a water solution) by means  of
     which ions may be interchanged from one substance to
     another.  The superficial physical structure of  the solid is
     not affected.

Ion Exchange Resins - Synthetic resins containing active groups
     (usually sulfonic. carboxylic. phenol, or substituted amino
     groups) that give the resin the ability to combine with or
     exchange ions with a solution.


                                12-11

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 Ion  Implantation  - A  process  of  introducing  impurities  into the
     near  surface regions  of  solids  by directing a beam of ions at
     the solid.

 Junction - A  region of  transition  between two different semiconduc-
     ting  regions in  a  semiconductor device  such as a p-n
     junction, or between  a metal  and a  semiconductor,

 Junction Box  - A  protective enclosure into which wires  or cables
     are led  and  connected to form joints.

 Knife  Switch  - Form of  switch where  moving blade enters stationary
     contact  clips.

 Klystron - An evaculated electron-beam tube  in which an initial
     velocity modulation imparted  to electrons in the beam results
     subsequently in  density  modulation  of the beam; used as an
     amplifier in the microwave  region or as an oscillator.

 Lagoon '- A man-made pond or lake for holding wastewater for the re-
     moval of suspended solids.  Lagoons are also used  as
     retention ponds  after chemical  clarification to polish the
     effluent and to  safeguard against upsets in he clarifier; for
     stabilization of organic matter by  biological oxidation; for
     storage  of sludge; and for  cooling  of water.

 Landfill - The disposal of inert,  insoluble waste solids by dumping
     at an approved site and  covering with earth.

 Lapping -  The mechanical abrasion  or surface planing of the
     semiconductor wafer to produce desired surface and wafer
     thickness.

 Lime - Any of a family of  chemicals consisting essentially of
     calcium  hydroxide made from limestone (calcite) which is
     composed almost  wholly of calcium carbonates or a  mixture of
     calcium  and  magnesium carbonates.

 Limiting Orifice  - A  device that limis flow by constriction to a
     relatively small area.   A constant  flow can be obtained over
     a wide range of  upstream pressures.

Machining  - The process of removing stock from a workpiece by
     forcing  a cutting tool through the workpiece and removing a
     chip  of  basis material.  Machining operatings such as tuning,
     milling, drilling, boring,  tapping, planing, broaching,
     sawing and cutoff, shaving, threading, reaming, shaping,
     slotting, bobbing, filling, and chambering are included in
     this  definition.
                                12-12

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Maqnaflux Inspection - Trade name for magnetic particle test.

Make-up Water - Total amount of water used by any process/process
     step.

Mandrel - A metal support serving as a core around which the metals
     are wound and anealled to form a central hole.

Mask (Shadow Mask) - Thin sheet steel screen with thousands of
     apertures through which electron beams pass to a color
     picture tube screen.  The color of an image depends on the
     balance from each of three different electron beams passing
     through the mask.

Metal Oxide Semiconductor Device - A metal insulator semiconductor
     structure in which the insulating layer is an oxide of the
     substrate material; for a silicon substrate, the insulating
     layer is silicon dioxide
Mica - A group of aluminum silicate minerals that are characterized
     by their ability to split into thin, flexible flakes because
     of their basal cleavage.

Miliqrams Per Liter (mg/1) - This is a weight per volume
     designation used in water and wastewater analysis.

Mixed Media Filtration - A filter which uses two or more filter
     materials of differing specific gravities selected so as to
     produce a filter uniformly graded from coarse to fine.

MOS - (See Metal Oxide Semiconductor).

Mount Assembly - Funnel neck ending of picture tube holding
     electron gun(s) .

National Pollutant Discharge Elimination System (NPDES) - The
     federal mechanism for regulating point source discharge by
     means of permits.

Neutralization - Chemical addition of either acid or base to a
     solution such that the pH is adjusted to approximately 7.

Noncontact Cooling Water - Water used for cooling which does not
     come into direct contact with any raw material, intermediate
     product, waste product or finished product.

Oil-Filled Capacitor - A capacitor whose conductor and insulating
     elements are immersed in an insulating fluid that is usually.
     but not necessarily, oil.
                                12-13

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Outfall - The point or  location where sewage or drainage discharges
     from a sewer, drain, or  conduit.

Oxide Mask - Oxidized layer of silicon wafer through which
     "windows" are formed which will allow for dopants to be
     introduced  into the silicon.

Panel - The front, screen portion  of the glass enclosure of a
     cathode ray tube.

PCS  (PQlychlorinated Biphenyl) - A colorless liquid, used as an in-
     sulating fluid in  electrical  equipment.   (The future use of
     PCB for new transformers was  banned by the Toxic Substances
     Control Act of October 1976).

pJK - The negative of the logarithm of the hydrogen ion
     concentration.  Neutral  water has a pH value of 7.  At pH
     lower than  7, a solution is acidic.  At pH higher than 7, a
     solution is alkaline.

pH Ad iustment -  A means of maintaining the optimum pH through the
     use of chemical additives.  Can be manual, automatic, or
     automatic with flow corrections.

Phase - One of the separate circuits or windings of a polyphase
     system, machine or other appartus.

Phase Assembly - The coil-core assembly of a single phase of a
     transformer.

Phosphate Coating - A conversion coating on metal, usually steel,
     produced by dipping it into a  hot aqueous solution of iron,
     zinc, or manganese phosphate.

Phosphor - Crystalline  inorganic compounds that produce light when
     excited by  ultraviolet radiation.

Photolithography - The process by  which a microscopic pattern is
     tranferred  from a photomask to a material layer (e.g..
     SiO } in2an actual circuit.

Photomask - A film or glass negative that has many high-resolution
     images,  used in the production of semiconductor devices and
     integrated  circuits.

Photon - A quantum of electromagnetic energy.

Photoresist - A  light-sensitive coating that is applied to a sub-
     strate or board,  exposed, and developed prior to chemical
     etching; the exposed areas serve as a mask for selective
     etching.
                                12-14

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Picture Tube - A cathode ray tube used in television receivers to
     produce an image by varying the electron beam intensity as
     the beam scans a fluorescent screen.

Plate - (1) Preferably called the anode.   The principal electrode
     to which the electron stream is attracted in an electron
     tube.  (2) One of the conductive electrodes in a capacitor.

Polar Capacitor - An electrolytic capacitor having an oxide film on
     only one foil or electrode which forms the anode or positive
     terminal.

Pole TypeTransformer - A transformer suitable for mounting on a
     pole or similar structure.

Poling - A step in the production of ceramic piezoelectric bodies
     which orients the oxes of the crystallites in the preferred
     direction.

Polishing - The process of removing stock from a workpiece by the
     action of loose or loosely held abrasive grains carried to
     the workpiece by a flexible support.  Usually, the amount of
     stock removed in a polishing operation is only incidental to
     achieving a desired surface finish or appearance.

Pollutant - The term "pollutant" means dredged spoil,, solid
     wastes, incinerator residue, sewage, garbage, sewage sludge,
     munitions, chemical wastes, biological materials, radioactive
     materials, heat, wrecked or discarded equipment, rock, sand,
     cellar dirt and industrial, municipal and agricultural waste
     discharged into water.

Pollutant Parameters - Those constituents of wastewater determined
     to be detrimental and, therefore, requiring control.

Pollution Load - A measure of the unit mass of a wastewater in
     terms of its solids or oxygen-demanding characteristics, or
     in terms of harm to receiving waters.

Polyelectrolytes - Synthetic or natural polymers containing ionic
     constituents, used as a coagulant or a coagulant aid in water
     and wastewater treatment.

Power Regulators - Transformers used to maintain constant output
     current for changes in temperature output load, line current,
     and time.
                                12-15

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Power Transformer - Transformer used at a generating station to
     step up the initial voltage to high levels for transmission.

Prechlorination - (1) Chlorination of water prior to filtration.
     (2) Chlorination of sewage prior to treatment.

Precipitate - The discrete particles of material settled-from a
     liquid solution.

Pressure Filtration - The process of solid/liquid phase separation
     effected by passing the more permeable liquid phase through a
     mesh which is impenetrable to the solid phase.

Pretreatment - Any wastewater treatment process used to reduce
     pollution load partially before the wastewater is introduced
     into a main sewer system or delivered to a treatment plant
     for substantial reduction of the pollution load.

Primary Feeder Circuit (Substation) Transformers - These
    . transformers (at substations) are used to reduce the voltage
     from the subtransmission level to the primary feeder level.

Primary Treatment - A process to remove substantially all floating
     and settleable solids in wastewater and partially to reduce
     the concentration of suspended solids.

Primary Winding - Winding on the supply (i.e. input) side of a
     transformer.

Priority Pollutant - The 129 specific pollutants established by
     the EPA from the S5 pollutants and classes of pollutants as
     outlined in the consent decree of June 8. 1976.

Process Wastewater - Any water which, during manufacturing or
     processing, comes into direct contact with or results from
     the production or use of any raw materials, intermediate
     product, finished product, by-product, or waste product.

Process Water - Water prior to its direct contact use in a process
     or operation.  (This water may be any combination of a raw
     water, service water, or either process wastewater or
     treatment facility effluent to be recycled or reused.)

Pyrolysis - The breaking apart of complex molecules into simpler
     units by the use of heat, as in the pyrolysis of heavy oil to
     make gasoline.

Quenching - Shock cooling by immersion of liquid or molten
     material in a cooling medium (liquid or gas).  Used in
     metallurgy, plastics forming, and petroleum refining.
                              12-16

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Raceway - A channel used to hold and protect wires,  cables or
     busbars.

Rapid Sandfilter - A filter for the purification of  water where
     water which has been previously treated, usually by
     coagulation and sedimentation, is passed through a filtering
     medium consisting of a layer of sand or prepared anthracite
     coal or other suitable material, usually from 24 to 30 inches
     thick and resting on a supporting bed of gravel or a porous
     medium such as carborundum.  The filtrate is removed by a
     drain system.  The filter is cleaned periodically by
     reversing the flow of the water through the filtering
     medium.  Sometimes supplemented by mechanical or air
     agitation during backwashing to remove mud and  other
     impurities.

Raw Wastewater - Plant water prior to any treatment  or use.

Rectifier - (1) A device for converting alternating current into
     direct current.  (2) A nonlinear circuit component that.
     ideally,  allows current to flow in one direction unimpeded
     but allows no current to flow in the other direction.

Recycled Water - Process wastewater or treatment facility effluent
     which  is recirculated to the same process.

Resistor - A device designed to provide a definite amount of
     resistance, used in circuits to limit current flow or to
     provide a voltage drop.

Retention Time - The time allowed for solids to collect in a
     settling tank.  Theoretically retention time is equal to the
     volume of the tank divided by the flow rate.  The actual
     retention time is determined by the purpose of the tank.
     Also,  the design residence time in a tank or reaction vessel
     which  allows a chemical reaction to go to completion, such as
     the reduction of hexavalent chromium or the destruction  of
     cyanide.

Reused Water - Process wastewater or treatment facility effluent
     which  is further used in a different manufacturing process.

Rinse - Water for removal of dragout by dipping, spraying, fogging
     etc.

Sanitary Sewer  - A sewer that carriers liquid  and water wastes  from
     residences,  commercial buildings, industrial plants'  and
     institutions together with ground, storm, and  surface waters
     that are not admitted intentionally.
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Sanitary Water - The supply of water used for sewage transport and
     the continuation of such effluents to disposal.

Secondary Settling Tank - A tank through which effluent from some
     prior treatment process flows for the purpose of removing
     settleable solids.

SecondaryWastewater Treatment - The treatment of wastewater by
     biological methods after primary treatment by sedimentation.

Secondary Winding - Winding on the load (i.e. output) side of a
     transformer.

Sedi.nte ntation - Settling of matter suspended in water by gravity.
     It is usually accomplished by reducing the velocity of the
     liquid below the point at which it can transport the
     suspended material.

Semiconductor - (1) A solid crystalline material whose electrical
     conductivity is intermediate between that of a metal and an
     insulator.  (2) A solid state electrical device that performs
     functions such as information processing and display, power
     handling, and interconversion between light energy and
     electrical energy.

Settleable Solids - (1) That matter in wastewater which will not
     stay in suspension during a preselected settling period, such
     as one hour, but either settles to the bottom or floats to
     the top.  (2) In the Imhoff cone test, the volume of matter
     that settles to the bottom of the cone in one hour.

Sewer - A pipe or conduit, generally closed, but normally not
     flowing full, for carrying sewage and other waste liquids.

Silvering - The deposition of thin films of silver on glass, etc.
     carried by one of several possible processes.

Skimming Tank - A tank so designed that floating matter will rise
     and remain on the surface of the wastewater until removed,
     while the liquid discharges continuously under walls or scum
     boards.

Sludge - The solids (and accompanying water and organic matter)
     which are separated from sewage or industrial wastewater.

Sludge Cake - The material resulting from air drying or dewatering
     sludge (usually forkable or spadable).
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Sludge Disposal - The final disposal of solid wastes.

Sludge Thickening - The increase in solids concentration of sludge
     in a sedimentation or digestion tank.

Snubper - Shock absorber.

Soldering - The process of joining metals by flowing a thin
     (capillary thickness) layer of nonferrous filler metal into
     the space between them.  Bonding results from the intimate
     contact produced by the dissolution of a small amount of base
     metal in the molten filler metal, without fusion of the base
     metal.

Solvent - A liquid capable of dissolving or dispersing one or more
     other substances.

Solvent Deareasing - The removal of oils and grease from a
     workpiece using organic solvents or solvent vapors.

Sputtering - A process to deposit a thin layer of metal on a solid
     surface in a vacuum.  Ions bombard a cathode which emits the
     metal atoms.

Stacked Capacitor - Device containing multiple layers of dielectric
     and conducting materials and designed to store electrical
     charge.

Stamping - Almost any press operations including blanking.
     shearing, hot or cold forming, drawing, blending, or coining.

Steel - An iron-based alloy, malleable under proper conditions.
     containing up to about 2% carbon.

Step-Down Transformers - (Substation) - A transformer in which the
     AC voltages of the secondary windings are lower than those
     applied to the primary windings,

Step-Up Transformer - Transformer in which the energy transfer is
     from a low-voltage primary (input) winding to a high-voltage
     secondary (output) winding or windings.

Studs - Metal pins .in glass of picture tube onto which shadow mask
     is hung,

Substation - Complete assemblage of plant, equipment, and the
     necessary buildings at a place where electrical energy is
     received (from one or more power-stations) for conversion
     (e.g. from AC to DC by means of rectifiers, rotary
     converters), for stepping-up or down by means of
     transformers, or for control (e.g. by means of switch-gear,
     etc.).
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Subtransmission (Substation) Transformers - At the end of a trans-
     mission line, the voltage is reduced to the subtransmission
     level  (at substations) by subtransmission transformers.

Suspended Solids - (1) Solids that are either floating or in
     suspension in water, wastewater, or other liquids, and which
     are largely removable by laboratory filtering.  (2) The
     quantity of material removed from wastewater in a laboratory
     test,  as prescribed in "Standard Methods for the Examination
     of Water and Wastewater" and referred to as non-filterable
     residue.

Tantalum -  A lustrous, platinum-gray ductile metal used in making
     dental and surgical tools, penpoints. and electronic
     equipment.

Tantalum Foil - A thin sheet of tantalum, usually less than 0.006
     inch thick.

Terminal -  A screw, soldering lug. or other point to which electric
     connections can be made.

Testing - A procedure in which the performance of a product is
     measured under various conditions.

Thermoplastic Resin - A plastic that solidifies when first heated
     under  pressure, and which cannot be remelted or remolded
     without destroying its original characteristics; examples are
     epoxides, melamines. phenolics and ureas.

Transformer - A device used to transfer electric energy, usually
     that of an alternating current, from one circuit to another;
     especially, a pair of multiply-wound, inductively coupled
     wire coils that effect such a transfer with a change in
     voltage, current, phases, or other electric characteristics.

Transistor  - An active component of an electronic circuit
     consisting of a small block of semiconducting material to
     which  at least three electrical contacts are made; used as an
     amplifier, detector, or switch.

Trickling Filter - A filter consisting of an artificial bed of
     coarse material, such as broken stone, clinkers, slats, or
     brush  over which sewage is distributed and applied in drops.
     films, or spray, from troughs, drippers, moving distributors
     or fixed nozzles and through which it trickles to the
     underdrain giving opportunity for the formation of zoogleal
     slimes which clarify the oxidized sewage.
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Trimmer___Caj^a_ci/tars_ - These are relatively small variable
     capacitors used in parallel with larger variable or fixed
     capacitors to permit exact adjustment of the capacitance of
     the parallel combination.

Vacuum Filter - A filter consisting of a cylindrical drum mounted
     on horizontal, axis, covered with a filter cloth revolving
     with a partial submergence in liquid.  A vacuum is maintained
     under the cloth for the larger part of a revolution to
     extract moisture and the cake is scraped off continuously.

Vacuum Metalizinq - The process of coating a workpiece with metal
     by flash heating metal vapor in a high-vacuum chamber
     containing the workpiece.  The vapor condenses on all exposed
     surfaces.

Vacuum Tube - An electron tube vacuated to such a degree that its
     electrical characteristics are essentially unaffected by the
     presence of residual gas or vapor.

Variable Capacitor - A device whose capacitance can be varied
     continuously by moving one set of metal plates with respect
     to another.

Voltage Breakdown - The voltage necessary to cause insulation
     failure.

Vo11age R e gu1a tor - Like a transformer, it corrects changes in
     current to provide continuous, constant current flow.

Welding - The process of joining two or more pieces of material
     by applying heat, pressure or both, with or without filler
     material, to produce a localized union through fusion or
     recrystallization across the interface.

Wet Air Scrubber - Air pollution control device which uses a  liquid
     or vapor to absorb contaminants and which produces a
     wastewater stream.

Wet Capacitor - {See oil-filled capacitor).

Wet Slug Capacitor - Refers to a sintered tantalum capacitor where
     the anode is placed in a metal can, filled with an
     electrolyte and then sealed.

Wet Tantalum Capacitor - A polar capacitor the cathode of which  is
     a liquid electrolyte (a highly ionized acid or salt solution).
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Met Transformer - Having the core  and  coils immersed in an
     insulating oil.

YoHe   A  set  of coils placed over  the  neck of a magnetically
     deflected  cathode-ray tube to deflect the electron bean
     horizontally and vertically when  suitable currents are passed
     through  the coils.
                                 12 — 22         ťO.S. OOTOUMBH! PRIWIKS OJTO3E l 1983 0-381-545/5829

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