United States
Environmental Protection
Agency
Office of Water
WH-552
Washington, DC 20460
EPA 440/1-83/075
March, 1983
Final
SrEPA
Development Document for
Effluent Limitations Guidelines and
Standards for the
Electrical and
Electronic Components
Point Source Category
(Phase I)
Ftoeyeted/R^yclabte
Pnnled on paper inat contain*
jil least 50% recycled fitwf
-------
DEVELOPMENT DOCUMENT
for
EFFLUENT LIMITATIONS GUIDELINES
for the
ELECTRICAL AND ELECTRONIC COMPONENTS
POINT SOURCE CATEGORY
PHASE I
William D. Ruckelshaus
Administrator (Designate)
Steven Schatzow
Director
Office of Water Regulations and Standards
Ul
O
Jeffery Denit. Acting Director
Effluent Guidelines Division
G. Edward Stigall. Chief
Inorganic Chemicals Branch
Richard Kinch
Project Officer
David Pepson
Technical Project Monitor
APRIL 21. 1983
U.S. Environmental Protection Agency
Office of Water
Office of Water Regulations and Standards
Effluent Guidelines Division
Washington. D.C. 20460
-------
TABLE OF CONTENTS
SECTION TITLE PAGE
EXECUTIVE SUMMARY 1
CONCLUSIONS 1
EFFLUENT LIMITATIONS AND STANDARDS 1
1 INTRODUCTION 1-1
1.1 ORGANIZATION AND CONTENT OF THIS DOCUMENT 1-1
1.2 SOURCES OF INDUSTRY DATA
2 LEGAL BACKGROUND 2-1
2.1 PURPOSE AND AUTHORITY 2-1
2.2 GENERAL CRITERIA FOR EFFLUENT LIMITATIONS 2-3
2.2.1 BPT Effluent Limitations 2-3
2.2.2 BAT Effluent Limitations 2-3
2.2.3 BCT Effluent Limitations 2-4
2.2.4 New Source Performance Standards 2-5
2.2.5 Pretreatment Standards For Existing Sources 2-5
2.2.6 Pretreatment Standards For New Sources 2-6
3 INDUSTRY SUBCATEGORIZATION 3-1
3.1 E&EC CATEGORY DEVELOPMENT 3-1
3.2 RATIONALE FOR INDUSTRY SUBCATEGORIZATION 3-1
3.3 SUBCATEGORY LISTING 3-1
4 DESCRIPTION OF THE INDUSTRY 4-1
4.1 SEMICONDUCTORS 4-1
4.1.1 Numbers Of Plants And Production Capacity 4-1
4.1.2 Products 4-1
4.1.3 Manufacturing Processes And Materials 4-2
4.2 ELECTRONIC CRYSTALS 4-7
4.2.1 Number Of Plants 4-7
4.2.2 Products 4-9
4.2.3 Manufacturing Processes And Materials 4-11
4.3 ELECTRON TUBES 4-16
4.4 PHOSPHORESCENT COATINGS 4-17
4.5 CAPACITORS. FIXED 4-17
4.6 CAPACITORS. FLUID-FILLED 4-17
4.7 CARBON AND GRAPHITE PRODUCTS 4-18
4.8 MICA PAPER 4-18
4.9 INCANDESCENT LAMPS 4-19
4.10 FLUORESCENT LAMPS 4-19
-------
TABLE OF CONTENTS (CONT)
SECTION TITLE PAGE
4.11 FUEL CELLS 4-19
4.12 MAGNETIC COATINGS 4-20
4.13 RESISTORS 4-20
4.14 TRANSFORMERS, DRY 4-20
4.15 TRANSFORMERS. FLUID-FILLED 4-21
4.16 INSULATED DEVICES. PLASTIC AND PLASTIC LAMINATED 4-21
4.17 INSULATED WIRE AND CABLE. NON-FERROUS 4-21
4.18 FERRITE ELECTRONIC PARTS 4-22
4.19 MOTORS. GENERATORS. AND ALTERNATORS 4-22
4.20 RESISTANCE HEATERS 4-22
4.21 SWITCHGEAR 4-22
5 WASTEWATER CHARACTERISTICS 5-1
5.1 SAMPLING AND ANALYTICAL PROGRAM 5-1
5.1.1 Pollutants Analyzed 5-1
5.1.2 Sampling Methodology 5-2
5.1.3 Analytical Methods 5-2
5.2 SEMICONDUCTORS 5-4
5.2.1 Wastewater Flows 5-4
5.2.2 Wastewater Sources 5-4
5.2.3 Pollutants Found and Sources of These
Pollutants 5-4
5.3 ELECTRONIC CRYSTALS 5-5
5.3.1 Wastewater Flows 5-5
5.3.2 Wastewater Sources 5-6
5.3.3 Pollutants Found and the Sources of These
Pollutants 5-6
5.4 CARBON AND GRAPHITE PRODUCTS 5-7
5.5 MICA PAPER 5-8
5.6 INCANDESCENT LAMPS 5-8
5.7 FLUORESCENT LAMPS 5-9
5.8 FUEL CELLS 5-9
5.9 MAGNETIC COATINGS 5-9
5.10 RESISTORS 5-9
5.11 DRY TRANSFORMERS 5-9
5.12 ELECTRON TUBES 5-10
5.13 PHOSPHORESCENT COATINGS 5-10
5.14 ALL OTHER SUBCATEGORIES 5-10
6 SUBCATEGORIES AND POLLUTANTS TO BE REGULATED.
EXCLUDED OR DEFERRED 6-1
6.1 SUBCATEGORIES TO BE REGULATED 6-1
6.1.1 Pollutants To Be Regulated 6-1
6.2 TOXIC POLLUTANTS AND SUBCATEGORIES NOT REGULATED 6-3
6.2.1 Exclusion of Pollutants 6-3
6.2.2 Exclusion of Subcategories 6-5
6.3 CONVENTIONAL POLLUTANTS NOT REGULATED 6-6
6.4 SUBCATEGORIES DEFERRED 6-6
11
-------
TABLE OF CONTENTS (CONT)
SECTION TITLE PAGE
7 CONTROL AND TREATMENT TECHNOLOGY 7-1
7.1 CURRENT TREATMENT AND CONTROL PRACTICES 7-1
7.1.1 Semiconductor Subcategory 7-1
7.1.2 Electronic Crystals Subcategory 7-2
7.2 APPLICABLE TREATMENT TECHNOLOGIES 7-2
7.2.1 pH Control 7-2
7.2.2 Fluoride Treatment 7-3
7.2.3 Arsenic Treatment 7-4
7.2.4 Total Toxic Organics Treatment 7-5
7.3 TREATMENT AND CONTROL OPTIONS 7-9
8 SELECTION OF APPROPRIATE CONTROL AND TREATMENT
TECHNOLOGIES AND BASES FOR LIMITATIONS 8-1
8.1 SEMICONDUCTOR SUBCATEGORY 8-1
8.1.1 Best Practicable Control Technology Currently
Available (BPT) 8-1
8.1.2 Best Available Technolgoy Economically Available
(BAT) 8-4
8.1.3 Best Conventional Pollutant Control Technology
(BCT) 8-5
8.1.4 New Source Performance Standards (NSPS) 8-6
8.1.5 Pretreatment Standards For New And Existing
Sources (PSNS AND PSES) 8-6
8.2 ELECTRONIC CRYSTALS SUBCATEGORY 8-7
8.2.1 Best Practicable Control Technology Currently
Available (BPT) 8-7
8.2.2 Best Available Technology Economically
Achievable (BAT) 8-10
8.2.3 Best Conventional Pollutant Control Technology
(BCT) 8-10
8.2.4 New Source Performance Standards (NSPS) 8-11
8.2.5 Pretreatment Standards For New And Existing
Sources (PSNS AND PSES) 8-12
8.3 STATISTICAL ANALYSIS 8-13
8.3.1 Calculation Of Variability Factors 8-13
8.3.2 Calculation Of Effluent Limitations 8-15
9 COST OF WASTEWATER CONTROL AND TREATMENT 9-1
9.1 COST ESTIMATING METHODOLOGY 9-1
9.1.1 Direct Investment Costs For Land and Facilities 9-2
9.1.2 Annual Costs 9-4
9.1.3 Items Not Included In Cost Estimate 9-6
9.2 COST ESTIMATES FOR TREATMENT AND CONTROL OPTIONS 9-7
9.2.1 Option 1 9-7
9.2.2 Option 2 9-8
9.2.3 Option 3 9-8
9.2.4 Option 4 9-8
9.3 ENERGY AND NON-WATER QUALITY ASPECTS 9-9
10 ACKNOWLEDGEMENTS 10-1
11 REFERENCES 11-1
12 GLOSSARY 12-1
iii
-------
LIST OF FIGURES
NUMBER TITLE PAGE
4-1 Silicon Integrated Circuit Production 4-3
4-2 Basic Manufacturing Process For Electronic
Crystals 4-13
9-1 Annual Cost vs. Flow For Option 2 Technology 9-13
9-2 Annual cost vs. Flow for Option 3 Technology 9-15
IV
-------
LIST OF TABLES
NUMBER TITLE PAGE
1 BPT Proposed Regulations For Semiconductors 2
2 BAT Proposed Regulations For Semiconductors 2
3 BCT Proposed Regulations For Semiconductors 2
4 NSPS Proposed Regulations For Semiconductors 2
5 PSES AND PSNS Proposed Regulations For
Semiconductors 3
6 BPT Proposed Regulations For Electronic Crystals 3
7 BAT Proposed Regulations For Electronic Crystals 3
8 BCT Proposed Regulations For Electronic Crystals 4
9 NSPS Proposed Regulations For Electronic
Crystals 4
10 PSNS AND PSES Proposed Regulations For
Electronic Crystals 4
4-1 Profile of Electronic Crystals Industry 4-8
B-l The Priority Pollutants 5-11
5-2 Semiconductor Process Wastewater Flow,
Average Plant 5-4
5-3 Semiconductor Summary of Raw Waste Data 5-13
5-4 Semiconductor Process Wastes, Plant 02040 5-15
5-5 Semiconductor Process Wastes, Plant 02347 5-19
5-6 Semiconductor Process Wastes. Plant 04294 5-21
5-7 Semiconductor Process Wastes, Plant O4296 5-27
5-8 Semiconductor Process Wastes. Plant 06143 5-29
5-9 Semiconductor Process Wastes. Plant 30167 5-38
5-10 Semiconductor Process Wastes, Plant 35035 5-46
5-11 Semiconductor Process Wastes, Plant 36133 5-50
5-12 Semiconductor Process Wastes,. Plant 36135 5-54
5-13 Semiconductor Process Wastes. Plant 36136 5-56
5-14 Semiconductor Process Wastes. Plant 41061 5-60
5-15 Semiconductor Process Wastes, Plant 42044 5-70
5-16 Summary of Wastewater Quantities Generated
In The Electronic Crystals Subcategory 5-6
5-17 Electronic Crystals Summary of Raw Waste Data 5-74
v
-------
LIST OF TABLES (CONT)
NUMBER TITLE , PAGE
5-18 Results of Wastewater Analysis, Plant 301 5-75
5-19 Results of Wastewater Analysis, Plant 304 5-77
5-20 Results of Wastewater Analysis, Plant 380 5-79
5-21 Results of Analysis, Plant 401 5-81
5-22 Results of Wastewater Analysis, Plant 402 5-83
5-23 Results of Analysis, Plant 403 5-85
5-24 Results of Wastewater Analysis, Plant 404 5-89
5-25 Results of Wastewater Analysis, Plant 405 5-93
6-1 Pollutants Comprising Total Toxic Organics 6-4
6-2 Toxic Pollutants Not Detected 6-7
7-1 Process Stream Contribution to Effluent TTO 7-10
7-2 Treatability of Toxic Organics Using Activated
Carbon 7-12
8-1 BPT Limitations. Semiconductors 8-1
8-2 Contribution of TTO From Process Wastewater Streams
to Plant Effluent 8-3
8-3 BAT Limitations. Semiconductors 8-4
8-4 Historical Performance Data Analysis of Effluent
Fluoride With Hydroxide Precipitation/Clarifi-
cation System 8-5
8-5 BCT Limitations. Semiconductors 8-5
8-6 NSPS Limitations, Semiconductors 8-6
8-7 PSES and PSNS Limitations, Semiconductors 8-6
8-8 BPT Limitations, Electronic Crystals 8-7
8-9 Historical Performance Data Analysis of Effluent
Arsenic With Hydroxide Precipitation/Clarifi-
cation 8-9
8-10 BAT Limitations, Electronic Crystals 8-10
8-11 BCT Limitations, Electronic Crystals 8-10
8-12 NSPS Limitations, Electronic Crystals 8-11
8-13 PSES and PSNS Limitations, Electronic
Crystals 8-11
9-1 Treatment and Control Options Selected As Bases
For Effluent Limitations 9-7
9-2 Plant Monitoring Costs for Organics 9-10
9-3 Incremental Cost of Solvent Disposal
In Accordance With RCRA 9-11
9-4 Model Plant Treatment Costs, Option 2 9-12
9-5 Model .Plant Treatment Costs, Option 3 9-14
9-6 Model Plant Treatment Costs. Option 5 9-16
VI
-------
EXECUTIVE SUMMARY
CONCLUSIONS
A study of the Electrical and Electronic Components Industrial Point
Source Category was undertaken to establish discharge limitations
guidelines and standards. The industry was subcategorized into 21
segments based on product type. Of the 21 subcategories. 17 have
been excluded under Paragraph 8 of the NRDC Consent Decree, two are
the subject of the Phase II Electrical and Electronic Components
Proposed Rule, electron tubes and luminescent materials, and for the
remaining two subcategories regulations are being promulgated. The
last two subcategories are Semiconductors and Electronic Crystals.
In the Semiconductor and Electronic Crystals subcategories.
pollutants of concern are fluoride, toxic organics. arsenic, and
total suspended solids. The major source of fluoride is the use of
hydrofluoric acid as an etchant or cleaning agent. Toxic organics
are associated with the use of solvents in cleaning and degreasing
operations and solvent based process chemicals. Arsenic is only
found in significant concentrations at facilities that manufacture
gallium or indium arsenide crystals: it is present in the wastewater
as a result of the manufacturing process. Suspended solids are only
found in significant concentrations at facilities that manufacture
crystals where the solids come from cutting and grinding operations.
Sex'eral treatment and control technologies applicable to the reduc-
tion of pollutants generated by the manufacture of semiconductors
and electronic crystals were evaluated, and the costs of these
technologies were estimated. Pollutant concentrations achievable
through the implementation of these technologies were based on
industry data and transfer of performance assessments from
industries with similar waste characteristics. These concentrations
are presented below as limitations and standards for the semi-
conductor and electronic crystals subcategories.
EFFLUENT LIMITATIONS AND STANDARDS
For both subcategories. Tables 1 through 10 present regulations for
Best Practicable Control Technology (BPT). Best Available Control
Technology (BAT). Best Conventional Polluant Control Technology
(BCT). New Source Performance Standards (NSPS). and Pretreatment
Standards for New and Existing Sources (PSNS and PSES). All
limitations and standards are expressed as milligrams per liter.
-------
TABLE 1: BPT REGULATIONS FOR SEMICONDUCTORS
24-hour 30-day
Maximum Average
Pollutant (mq/1) (mq/1) pH Range
Total Toxic Organics * 1.37 **
pH 6-9
TABLE 2: BAT REGULATIONS FOR SEMICONDUCTORS
24-hour 30-day
Maximum Average
Pollutant (mq/1) (mq/1)
Total Toxic Organics * 1.37 **
Fluoride 32 17.4
TABLE 3: BCT REGULATIONS FOR SEMICONDUCTORS
24-hour 30-day
Maximum Average
Pollutant (mq/1) (mq/1) pH Range
pH 6-9
TABLE 4: NSPS REGULATIONS FOR.SEMICONDUCTORS
24-hour 30-day
Maximum Average
Pollutant (mq/1) (mq/1) pH Range
Total Toxic Organics * 1.37 **
Fluoride 32 17.4
pH 6-9
* Total Toxic Organics is explained in Section 6.
** The Agency is not providing 30-day average limits for total
toxic organics for reasons explained in Section 8.
-------
TABLE 5: PSES and PSNS REGULATIONS FOR
SEMICONDUCTORS
24-hour 30-day
Maximum Average
Pollutant (mq/.l.) (mg/1)
Total Toxic Organics * 1.37 **
TABLE 6: BPT REGULATIONS FOR ELECTRONIC CRYSTALS
Pollutant
Total Toxic Organics *
Fluoride
Arsenic ***
TSS
pH
24-hour
Maximum
(ma/1)
1.37
32
2.09
61
30-day
Average
(ma/1)
**
17.4
0.83
23
pH Range
6-9
TABLE 7: BAT REGULATIONS FOR ELECTRONIC CRYSTALS
24-hour 30-day
Maximum Average
Pollutant (mq/1) (roq/1)
Total Toxic Organics * 1.37 **
Fluoride 32 17.4
Arsenic *** 2.09 0.83
* Total Toxic Organics is explained in Section 6.
** The Agency is not providing 30-day average limits for total
toxic organics for reasons explained in Section 8.
*** The arsenic limitation applies only to discharges from
gallium or indium arsenide crystals manufacturing operations
-------
TABLE 8. BCT REGULATIONS FOR
ELECTRONIC CRYSTALS
Pollutant
TSS
pH
24-hour
Maximum
(ma/1)
61.0
30-day
Average
(ma/1)
23
pH Range
6-9
TABLE 9. NSPS REGULATIONS FOR
ELECTRONIC CRYSTALS
Pollutant
Total Toxic
Fluoride
Arsenic ***
TSS
PH
24-hour
Maximum
(ma/1)
Organics * 1.37
32
2.09
61.0
30-day
Average
(ma/1) pH Ranae
**
17.4
0.83
23
6-9
TABLE 10: PSNS AND PSES REGULATIONS FOR
ELECTRONIC CRYSTALS
Pollutant
Total Toxic
Arsenic ***
24-hour
Maximum
(ma/1)
Organics * 1.37
2.09
30-day
Average
(ma/1)
**
0.83
* Total Toxic Organics is explained in Section 6.
** The Agency is not providing 30-day average limits for total
toxic organics for reasons explained in Section 8.
*** The arsenic limitation applies only to discharges from
gallium or indium arsenide crystals manufacturing
operations.
-------
SECTION 1
INTRODUCTION
The purpose of this document is to present the findings of the EPA
study of the Electrical and Electronic Components (E&EC) Point
Source Category, Phase I. The document (1) explains which
segments of the industry are regulated and which are not; (2)
discusses the reasons; and (3) explains how the actual limitations
were developed. Section 1 describes the organization of the
document and reviews the sources of industry data that were used
to provide technical background for the limitations.
1.1 ORGANIZATION AND CONTENT OF THIS DOCUMENT
Industry data are used throughout this report in support of
regulating subcategories or excluding subcategories from
regulation under Paragraph 8 of the NRDC Consent Decree.
Telephone contacts, the literature, and plant visits provided the
information used to subcategorize the industry in Section 3.
These data were also considered in subcategorizing the industry in
Section 4. Description of the Industry.
Water use and wastewater characteristics in each subcategory are
described in Section 5 in terms of flow, pollutant concentration,
and load. Subcategories to be regulated, or excluded, are found
in Section 6. The discussion in that section identifies and
describes the pollutants to be regulated or presents the rationale
for subcategory exclusion. Section 7 describes the technology
options available. The regulatory limits and the bases for these
limitations are presented in Section 8. Section 9 estimates the
capital and operating costs for the treatment technologies used as
the basis for limitations.
1.2 SOURCES OF INDUSTRY DATA
Data on the E&EC category were gathered from literature studies,
contacts with 1PA regional offices, from plant surveys and
evaluations, and through contacting waste treatment equipment
manufacturers. These data sources are discussed below.
Published literature in the form of books, reports, papers.
periodicals, promotional materials. Dunn and Bradstreet surveys.
and Department of Commerce Statistics was examined; the most
informative sources are listed in Section 11. References. The
researched material included product descriptions and uses,
manufacturing
1-1
-------
processes, raw materials consumed, waste treatment technology, and
the general characteristics of plants in the E&EC category.
including number of plants, employment levels, and production.
All 10 EPA offices were telephoned for assistance in identifying
E&EC plants in their respective regions.
Three types of data collection were used to supplement available
information pertaining to facilities in the E&EC category. First.
more than 250 plants were contacted by phone or letter to obtain
basic information regarding products, manufacturing processes.
wastewater generation, and waste treatment. Second, based on this
information. 78 plants were visited to view their operations and
discuss their products, manufacturing processes, water use. and
wastewater treatment. Third. 38 plants were selected for sampling
visits to determine the pollutant characteristics of their
wastewater.
The sampling program at each plant consisted of up to three, days of
sampling. Prior to any sampling visit, all available data, such as
layouts and diagrams of the selected plant's production processes
and waste treatment facilities, were reviewed. In most cases, a
visit to the plant was made prior to the actual sampling visit to
finalize the sampling approach.
Representative sample points were then selected. Finally, before
the visit was conducted, a detailed sampling plan showing the
selected sample points and all pertinent sample data to be obtained
was presented and reviewed.
To more completely characterize each product by the number of
producers, production levels, production processes, in-plant
controls, waste sources and volumes, waste treatment, and waste
disposition, a major survey of each industry was necessary.
Following literature surveys, telephone contacts, and plant visits,
questionnaires for obtaining the above information were prepared for
each product. After review and comments by selected industry
personnel, the questionnaires were mailed to all known product
manufacturers. The results of these surveys provided the major
sources of industrial data presented in this document.
Various manufacturers of wastewater treatment equipment were
contacted by phone or were visited to obtain cost and performance
data on specific technologies. Information collected was based both
on manufacturers' research and on actual operation.
1-2
-------
SECTION 2
LEGAL BACKGROUND
2.1 PURPOSE AND AUTHORITY
The Federal Water Pollution Control Act Amendments of 1972
established a comprehensive program to "restore and maintain the
chemical, physical, and biological integrity of the Nation's
waters." Section 101(a). Section 301(b)(l)(A) set a deadline of
July 1. 1977. for existing industrial dischargers to achieve
"effluent limitations requiring the application of the best
practicable control technology currently available" (BPT). Section
301(b)(2)(A) set a deadline of July 1, 1983. for these dischargers
to achieve "effluent limitations requiring the application of the
best available technology economically achievable (BAT), which will
result in reasonable further progress toward the national goal of
eliminating the discharge of all pollutants."
Section 306 required that new industrial direct dischargers comply
with new source performance standards (NSPS), based on best
available demonstrated technology. Sections 307(b) and (c) of the
Act required pretreatment standards for new and existing dischargers
to publicly owned treatment works (POTW). While the requirements
for direct dischargers were to be incorporated into National
Pollutants Discharge Elimination System (NPDES) permits issued under
Section 402, the Act made pretreatment standards enforceable
directly against dischargers to POTWs (indirect dischargers).
Section 402(a)(l) of the 1972 Act does allow requirements to be set
case-by-case. However, Congress intended control requirements to be
based, for the most part, on regulations promulgated by the
Administrator of EPA. Section 304(b) required regulations that
establish effluent limitations reflecting the ability of BPT and BAT
to reduce effluent discharge. Sections 304(c) and 306 of the Act
required promulgation of regulations for NSPS. Sections 304(f).
307(b). and 307(c) required regulations for pretreatment standards.
In addition to these regulations for designated industry categories.
Section 307(a) required the Administrator to promulgate effluent
standards applicable to all dischargers of toxic pollutants.
Finally. Section 501(a) authorized the Administrator to prescribe
any additional regulations "necessary to carry out his functions"
under the Act.
2-1
-------
The EPA was unable to promulgate many of these regulations by the
deadlines contained in the Act. and as a result, in 1976. EPA was
sued by several environmental groups. In settling this lawsuit. EPA
and the plaintiffs executed a "Settlement Agreement" which was
approved by the Court. This agreement required EPA to develop a
program and meet a schedule for controlling 65 "priority" pollutants
and classes of pollutants. In carrying out this program. EPA must
promulgate BAT effluent limitations guidelines, pretreatment
standards, and new source performance standards for 21 major
industries. (See Natural Resources Defense Council. Inc. v. Train.
8 ERG 2120 (D.D.C. 1976). modified. 12 ERG 1833(D.D.C. 1979).
modified by Order dated October 26, 1982.
Several of the basic elements of the Settlement Agreement program
were incorporated into the Clean Water Act of 1977. This law made
several important changes in the Federal water pollution control
program. Sections 301(b)(2)(A) and 301(b)(2)(C) of the Act now set
July 1. 1984. as the deadline for industries to achieve effluent
limitations requiring application of BAT for "toxic" pollutants.
"Toxic " pollutants here included the 65 "priority" pollutants and
classes of pollutants that Congress declared "toxic" under Section
307(a) of the Act.
Likewise, EPA's programs for new source performance standards and
pretreatment standards are now aimed principally at controlling
toxic pollutants. To strengthen the toxics control program. Section
304(e) of the Act authorizes the Administrator to prescribe "best
management practices" (BMPs). These BMPs are to prevent the release
of toxic and hazardous pollutants from: (1) plant site runoff. (2)
spillage or leaks, (3) sludge or waste disposal, and (4) drainage
from raw material storage if any of these events are associated
with, or ancillary to, the manufacturing or treatment process.
In keeping with its emphasis on toxic pollutants, the Clean Water
Act of 1977 also revises the control program for non-toxic
pollutants. For "conventional" pollutants identified under Section
304(a)(4) Concluding biochemical oxygen demand, suspended solids.
fecal coliform. and pH), the new Section 301(b)(2)(E) requires
"effluent limitations requiring the application of the best
conventional pollutant control technology" (BCT) instead of BAT
to be achieved by July 1. 1984. The factors considered in
assessing BCT for an industry include the relationship between the
cost of attaining a reduction in effluents and the effluent
reduction benefits attained, and a comparison of the cost and level
of reduction of such pollutants by publicly owned treatment works
and industrial sources. For those pollutants that are neither
"toxic" pollutants nor "conventional" pollutants. Sections
301(b)(2)(A) and (b)(2)(F) require achievement of BAT effluent
2-2
-------
limitations within three years after their establishment or July 1.
1984, whichever is later, but not later than July 1, 1987.
The purpose of this proposed regulation is to establish BPT. BAT,
and BCT effluent limitations and NSPS, PSES, and PSNS for the
Electrical and Electronic Components Point Source Category.
2.2 GENERAL CRITERIA FOR EFFLUENT LIMITATIONS
2.2.1 BPT Effluent Limitations
The factors considered in defining best practicable control
technology currently available (BPT) include: (1) the total cost of
applying the technology relative to the effluent reductions that
result, (2) the age of equipment and facilities involved, (3) the
processes used. (4) engineering aspects of the control technology,
{5} process changes, (6) non-water quality environmental impacts
(including energy requirements), (7) and other factors as the
Administrator considers appropriate. In general, the BPT level
represents the average of the best existing performances of plants
within the industry of various ages, sizes, processes, or other
common characteristics. When existing performance is uniformly
inadequate, BPT may be transferred from a different subcategory or
category. BPT focuses on end-of-process treatment rather than
process changes or internal controls, except when these technologies
are common industry practice.
The cost/benefit inquiry for BPT is a limited balancing, committed
to EPA's discretion, which does not require the Agency to quantify
benefits in monetary terms. See, e.g.. American Iron and Steel
Institute v. EPA. 526 F.2d 1027 (3rd Cir. 1975). In balancing costs
against the benefits of effluent reduction, EPA considers the volume
and nature of existing discharges, the volume and nature of
discharges expected after application of BPT, the general
environmental effects of the pollutants, and the cost and economic
impacts of the required level of pollution control. The Act does
not require or permit consideration of water quality problems
attributable to particular point sources or water quality
improvements in particular bodies of water. See Weyerhaeuser
Company v. Costie. 590 F.2d 1011 (D.C.Cir. 1978): Appalachian Power
Company et al. v. U.S.E.P.A. (B.C. Cir., Feb. 8, 1972).
2.2.2 BAT Effluent Limitations
The factors considered in defining best available technology
economically achievable (BAT) include the age of equipment and
2-3
-------
facilities involved, the processes used, process changes, and
engineering aspects of the technology process changes, non-water
quality environmental impacts (including energy requirements) and
the costs of applying such technology [(Section 304(b) (2)(B)]. At
a minimum, the BAT level represents the best economically achievable
performance of plants of various ages, sizes, processes, or other
shared characteristics. As with BPT. uniformly inadequate
performance within a category or subcategory may require transfer of
BAT from a different subcategory or category. Unlike BPT. however.
BAT may include process changes or internal controls, even when these
technologies are not common industry practice.
The statutory assessment of BAT "considers" costs, but does not
require a balancing of costs against effluent reduction benefits
(see Weyerhaeuser v. Costle. supra). In developing BAT. however. EPA
has given substantial weight to the reasonableness of costs. The
Agency has considered the volume and nature of discharges, the
volume and nature of discharges expected after application of BAT.
the general environmental effects of the pollutants, and the costs
and economic impacts of the required pollution control levels.
Despite this expanded consideration of costs, the primary factor for
determining BAT is the effluent reduction capability of the control
technology. The Clean Water Act of 1977 establishes the achievement
of BAT as the principal national means of controlling toxic water
pollution from direct discharging plants.
2.2.3 BCT Effluent Limitations
The 1977 Amendments added Section 301(b)(2)(E) to the Act
establishing "best conventional pollutant control technology" (BCT)
for discharges of conventional pollutants from existing industrial
point sources. Conventional pollutants are those defined in Section
304(a)(4) [biological oxygen demanding pollutants (BOD), total
suspended solids (TSS). fecal coliform.and pH]. and any additional
pollutants defined by the Administrator as "conventional" [oil and
grease. 44 FR 44501. July 30. 1979].
BCT is not an additional limitation but replaces BAT for the control
of conventional pollutants. In addition to other factors specified
in Section 304(b)(4)(B). the Act requires that BCT limitations be
assessed in light of a two-part "cost reasonableness" test.
American Paper Institute v. EPA. 660 F.2d 954 (4th Cir. 1981). The
first test compares the costs for private industry to reduce its
conventional pollutants with the costs to publicly owned treatment
works for similar levels of reduction in their discharge of these
pollutants. The second test examines the cost-effectiveness of
additional industrial treatment beyond BPT. EPA must find that
2-4
-------
limitations are "reasonable" under both tests before establishing
them as BCT. In no case may BCT be less stringent than BPT.
EPA published its methodology for carrying out the BCT analysis oji
August 29. 1979 (44 FR 50732). In the case mentioned above, the
Court of Appeals ordered EPA to correct data errors underlying EPA's
calculation of the first test, and to apply the second cost test
(EPA had argued that a second cost test was not required).
On October 29. 1982. the Agency proposed a revised BCT methodology.
See 47 FR 49176. Although the Agency has not yet promulgated its
revised BCT cost test methodology, we are promulgating BCT
limitations as proposed for the semiconductor and electronic crystal
industries. Application of the BCT cost test is not necessary for
these industries for reasons presented in Section 8 of this document.
2.2.4 New Source Performance Standards
The basis for new source performance standards (NSPS) under Section
306 of the Act is the best available demonstrated technology. New
plants have the opportunity to design the best and most efficient
processes and wastewater treatment technologies. Therefore,
Congress directed EPA to consider the best demonstrated process
changes, in-plant controls, and end-of-process treatment
technologies that reduce pollution to the maximum extent feasible.
2.2.5 Pretreatment Standards for Existing Sources
Section 307(b) of the Act requires EPA to promulgate pretreatment
standards for existing sources (PSES) which industry must achieve
within three years of promulgation. PSES are designed to prevent
the discharge of pollutants that pass through, interfere with, or
are otherwise incompatible with the operation of POTWs.
The legislative history of the 1977 Act indicates that pretreatment
standards are to be technology-based, analogous to the best
available technology for removal of toxic pollutants. The General
Pretreatment Regulations which serve as the framework for the
pretreatment standards are in 40 CFR Part 403, 46 FR 9404
(January 28, 1981).
EPA has generally determined that there is passthrough of pollutants
if the percent of pollutants removed by a well-operated POTW
achieving secondary treatment is less than the percent removed by
the BAT model treatment system. A study of 40 well-operated POTWs
with biological treatment and meeting secondary treatment criteria
showed that metals are typically removed at rates varying from 2O
2-5
-------
percent to 70 percent. POTWs with only primary treatment have even
lower rates of removal. In contrast. BAT level treatment by the
industrial facility can achieve removal in the area of 97 percent or
more. Thus, it is evident that metals do pass through POTWs. As
for toxic organics. data from the same POTWs illustrate a wide range
of removal, from 0 to greater than 99 percent. Overall. POTWs have
removal rates of toxic organics which are less effective than BAT.
2.2.6 Pretreatment Standards for New Sources
Section 307(c) of the Act requires EPA to promulgate pretreat ment
standards for new sources (PSNS) at the same time that it
promulgates NSPS. These standards are intended to prevent the
discharge of pollutants which pass through, interfere with, or are
otherwise incompatible with a POTW. New indirect dischargers, like
new direct dischargers, have the opportunity to incorporate the best
available demonstrated technologies including process changes,
in-plant controls, and end-of-process treatment technologies -- and
to select plant sites that ensure the treatment system will be
adequately installed. Therefore, the Agency sets PSNS after
considering the same criteria considered for NSPS. PSNS will have
environmental benefits similar to those from NSPS.
2-6
-------
SECTION 3
INDUSTRY SUBCATEGORIZATION
This section explains how the E&EC category was developed, discusses
the rationale for subcategorization. and finally provides a listing
of the E&EC subcategories.
3.1 ES.EC CATEGORY DEVELOPMENT
The ES.EC category is derived from industries found in the Standard
Industrial Classification (SIC) major group 36, Electrical and
Electronic Machinery, Equipment, and Supplies. Many of the
industries listed under this SIC Code were never evaluated as part
of the E&EC category because EPA initially concluded that the waste-
water discharges from these industries were primarily associated
with the Electroplating or Metal Finishing Category.
3.2 RATIONALE FOR INDUSTRY SUBCATEQORIZATION
After the Agency has obtained analyses of wastewater data and
process information from facilities within a category, the Clean
Water Act requires EPA to consider a number of factors to determine
if subcategorization is appropriate for the purpose of establishing
effluent limitations and standards. These factors include: raw
materials, final products, manufacturing processes, geographical
location, plant size and age, waste-water characteristics, non-water
quality environmental impacts, treatment costs, energy costs, and
solid waste generation.
A review of each of these factors revealed that product type is the
principal factor affecting the wastewater characteristics of plants
within the E&EC category. Product type determines both the raw and
process material requirements, and the number and type of manufac-
turing processes used. Plants manufacturing the same product were
found to use the same wet processes and produce wastewater with
similar characteristics. Other factors affected the wastewater
characteristics, but were not adequate in themselves to be used as
bases for subcategorization,
3.3 SUBCATEGORY LISTING
Based on product type (discussed above). EPA established the
following twenty-one (21) subcategories for the E&EC category:
3-1
-------
Semiconductors
Electronic Crystals
Electron Tubes (Phase II)
Phosphorescent Coatings (Phase II)*
Capacitors, Fixed
Capacitors, Fluid Filled
Carbon and Graphite Products
Mica Paper
Incandescent Lamps
Fluorescent Lamps
Fuel Cells
Magnetic Coatings
Resistors
Transformers, Dry
Transformers. Fluid Filled
Insulated Devices. Plastic and Plastic Laminated
Insulated Wire and Cable. Nonferrous
Ferrite Electronic Parts
Motors. Generators, and Alternators
Eesistance Heaters
Switchgear
Phosphorescent coatings named as luminescent materials in
Phase II proposal.
3-2
-------
SECTION 4
DESCRIPTION OF THE INDUSTRY
This section provides a general description of the subcategories
presented in the previous section. It includes a discussion of
the number of plants and production capacity, product lines, and
manufacturing processes including raw materials used. Industry
descriptions for the regulated subcategories (Semiconductors and
Electronic Crystals) are presented in considerable detail, while
industry descriptions are abbreviated for subcategories which
have been excluded or proposed under Phase II.
4.1 SEMICONDUCTORS
4.1.1 Number of Plants and Production Capacity
It is estimated that approximately 257 plants are involved in the
production of semiconductor products. This estimate comes from
an August 1979 listing of plant locations compiled by the
Semiconductor Industry Association, Seventy-seven of the plants
are direct dischargers and one hundred and eighty are indirect
dischargers. The U.S. Department of Commerce 1977 Census of
Manufacturers estimates that 62.000 production employees are
engaged in the manufacture of semiconductor products. Plants
surveyed or visited during this study employ between 30 and 2500
production employees. The majority of plants employ between 150
and 500 production employees, with a typical plant having about
350 employees. Only 9 of the 52 plants in the data base have
more than 500 production employees.
The total number of semiconductor products for the year 1978 was
obtained from the Semiconductor Industry Association. During
that year. 8.844 billion units were produced for a total revenue
of $3.123 billion.
4.1.2 Products
Semiconductors are solid state electrical devices which perform a
variety of functions in electronic circuits. These functions
include information processing and display, power handling, data
storage, signal conditioning, and the interconversion between
light energy and electrical energy. The semiconductors range
from the simple dioda. commonly used as an alternating current
rectifier, to the integrated circuit which may have the equiv-
alent of 250.000 active components in a 0.635 cm (1/4 inch)
square.
4-1
-------
Semiconductors are used throughout the electronics industry. The
major semiconductor products are:
o Silicon based integrated circuits which include bi-
polar. MOS (metal oxide silicon), and digital and
analog devices. Integrated circuits are used in a
wide variety of commercial and consumer electronic
equipment, calculators, electronic games and toys.
and medical equipment.
o Light emitting diodes (LED) which are produced from
gallium arsenide and gallium phosphide wafers. These
devices are commonly used as information displays in
electronic games, watches, and calculators.
o Diodes and transistors which are produced from silicon
or germanium wafers. These devices are used as active
components in electronic circuits which rectify,
amplify, or condition electrical signals.
o Liquid crystal display (LCD) devices which are pro-
duced from liquid crystals. These devices are prim-
arily used for information displays as an alternative
to LEDs.
4.1.3 Manufacturing Processes and Materials
The manufacturing processes and materials used for semiconductor
production are described in the following paragraphs. Each type
of semiconductor with its associated manufacturing operations is
discussed separately because production processes differ
depending on the basis material.
Silicon-Based Integrated Circuits (Figure 4-1 on page 4-3).
These circuits require high purity crystal silicon as a basis
material. Most of the companies involved in silicon-based
integrated circuit production purchase crystal silicon ingots
(cylindrical crystals which can be sliced into wafers), slices.
or wafers from outside sources rather than grow their own
crystals.
In cases where the ingot is received it is sliced into round
wafers approximately 0.76mm (0.030 inches) thick. These slices
are then lapped or polished by means of a mechanical grinding
machine or are chemically etched to provide a smooth surface and
remove surface oxides and contaminants. Commonly used etch
solutions are hydrofluoric acid or hydrofluoric-nitric acid
mixtures. The presence of hydrofluoric acid is generally
necessary because of the solubility characteristics of silicon
and silicon oxide. Other acids such as sulfuric or nitric may be
4-2
-------
CO
SILICON WAFER
SILICON OR
SILICON COMPOUND
DEPOSITION
THIS SEQUENCE MAY BE
REPEATED 1 TO M TIMES
AC.OOB
SOLVENT RINSE "* DOPING
1
SPENT A CIO
OR SOLVENT
01 WATER
"^ ' RINSE
1
WASTEWATER
M6T*1 , a, PA
DEPOSITION ^
t* , fT
1
;H
r
DEVELOPING
UV LIGHT APPLICATION
"* EXPOSURE ^ OP PHOTORESIST "^
SPENT ACID
SSIVATION
DICING
INTO CHIPS
ASSEMBLY
flGURE 4-1. SILICON INTEGRATED CIRCUIT PRODUCTION
-------
used depending on the nature of the material to be removed,
Wastewater results from cooling the diamond tipped saws used for
slicing* from spent etch solution, and from deionized (DI) water
rinses following chemical etching and mechanical finishing
operations.
The next step in the process depends on the type of integrated
circuit device being produced, but commonly involves the
deposition or growth of a layer or layers of silicon dioxide.
silicon nitride, or epitaxial silicon. For example, a silicon
dioxide layer is commonly applied to bipolar devices, and an
initial layer of silicon dioxide with the subsequent deposition
of a silicon nitride layer is commonly applied to MOS devices.
The wafer is then coated with a photoresist, a photosensitive
emulsion. The wafer is next exposed to ultraviolet light using
metal or glass photomasks that allow the light to strike only
selected areas. After exposure to ultraviolet light, unexposed
resist is removed from the wafer, usually in a DI water rinse.
This allows selective etching of the wafer. The wafer is then
visually inspected under a microscope and etched in a solution
containing hydrofluoric acid (HF). The etchant produces
depressions, called holes or windows, where the diffusion of
dopants later occurs. Dopants are impurities such as boron.
phosphorus and other specific metals. These impurities
eventually form circuits through which electrical impulses can be
transmitted. The wafer is then rinsed in an acid or solvent
solution to remove the remainder of the hardened photoresist
material.
Diffusion of dopants is generally a vapor phase process in which
the dopant, in the form of a gas, is injected into a furnace
containing the wafers. Gaseous phosphine and boron trifluoride
are common sources for phosphorus and boron dopants, respect-
ively. The gaseous compound breaks down into elemental phos-
phorus or boron on the hot wafer surface. Continued heating of
the wafer allows diffusion of the dopant into the surface through
the windows at controlled depths to form the electrical pathways
within the wafer. Solid forms of the dopant may also be used.
For example, boron oxide wafers can be introduced into the
furnace in close proximity to the silicon wafers. The boron
oxide sublimes and deposits boron on the surface of the wafer by
condensation and then diffuses into the wafer upon continued
heating.
Then a second oxide layer is grown on the wafer, and the process
is repeated. This photolithographic-etching-diffusion-oxide
process sequence may occur a number of times depending upon the
application of the semiconductor.
During the photolithographic-etching-diffusion-oxide processes,
the wafer may be cleaned many times in mild acid or alkali
4-4
-------
solutions followed by DI water rinses and solvent drying with
acetone or isopropyl alcohol. This is necessary to maintain
wafer cleanliness.
After the diffusion processes are completed, a layer of metal is
deposited onto the surface of the wafer to provide contact points
for final assembly. The metals used for this purpose include
aluminum, copper, chromium, gold, nickel, platinum, and silver.
The processes associated with the application of the metal layer
are covered by the electroplating or metal finishing effluent
limitations and standards. One of the following three processes
is used to deposit this metal layer:
o Sputtering --
In this process the source metal and the target wafer
are electrically charged, as the cathode and anode,
respectively, in a partially evacuated chamber. The
electric field ionizes the gas in the chamber and
these ions bombard the source metal cathode, ejecting
metal which deposits on the wafer surface.
o Vacuum Deposition --
In this process the source metal is heated in a high
vacuum chamber by resistance or electron beam heating
to the vaporization temperature. The vaporized metal
condenses on the surface of the silicon wafer.
o Electroplating
In this process the source metal is electrochemically
deposited on the target wafer by immersion in an
electroplating solution and the application of an
electrical current.
Finally, the wafer receives a protective oxide layer (passiva-
tion) coating before being back lapped to produce a wafer of the
desired thickness. Then the individual chips are diced from the
wafer and are assembled in lead frames for use. Many companies
involved in semiconductor production send completed wafers to
overseas facilities where dicing and assembly operations are less
costly as a result of the amount of hand labor necessary to
inspect and assemble finished products.
Light Emitting Diodes (LIDs) LEDs are produced from single
crystal gallium arsenide or gallium phosphide wafers. These
wafers are purchased from crystal growers and upon receipt are
placed in a furnace where a silicon nitride layer is grown on the
wafer. The wafer then receives a thin layer of photoresist, is
exposed through a photomask, and is developed with a xylene-based
developer. Following this, the wafer is etched using
hydrofluoric acid or a plasma-gaseous-etch process, rinsed in DI
4-5
-------
water, and then stripped of resist. The wafer is again rinsed in
DI water before a dopant is diffused into the surface of the
wafer. A metal oxide covering is applied next, and then a
photoresist is applied. The wafer is then masked, etched in a
solution of aurostrip (a cyanide-containing chemical commonly
used in gold stripping), and rinsed in DI water. The desired
thickness is produced by backlapping and a layer of metal.
usually gold, is sputtered onto the back of the wafer to provide
electrical contacts. Testing and assembly complete the
production process.
Diodes and Transistors Diodes and transistors are produced
from single crystal silicon or germanium wafers. These devices.
called discrete devices, are manufactured on a large scale, and
their use is mainly in older or less sophisticated equipment
designs, although discrete devices still play an important role
in high power switching and amplification.
The single crystal wafer is cleaned in an acid or alkali solu-
tion, rinsed in DI water, and coated with a layer of photo-
resist. The wafer is then exposed and etched in a hydrofluoric
acid solution. This is followed by rinsing in DI water, drying.
and doping in diffusion furnaces where boron or phosphorus are
diffused into specific areas on the surface of the wafer. The
wafers are then diced into individual chips and sent to the
assembly area. In the assembly area electrical contacts are
attached to the appropriate areas and the device is sealed in
rubber, glass, plastic, or ceramic material. Extra wires are
attached and the device is inspected and prepared for shipment.
Liquid Crystal Display (LCD) Production A typical LCD
production line begins with optically flat glass that is cut into
four-inch squares. The squares are then cleaned in a solution
containing ammonium hydroxide, immersed in a mild alkaline
stripping solution, and rinsed in DI water. The plates are spun
dry and sent to the photolithography area for further processing.
In the photolithographic process a photoresist mask is applied
with a roller, and the square is exposed and developed. This
square then goes through deionized water rinses and is dried,
inspected, etched in an acid solution, and rinsed in DI water. A
solvent drying step is followed by another alkaline stripping
solution. The square then goes through DI water rinses, is spun
dry. and is inspected.
The next step of the LCD production process is passivation. A
silicon oxide layer is deposited on the glass by using liquid
silicon dioxide, or by using silane and oxygen gas with phosphine
gas as a dopant. This layer is used to keep harmful sodium ions
4-6
-------
on the glass away from the surface where they could alter the
electronic characteristics of the device. Several production
steps may occur here if it is necessary to rework the piece.
These include immersion in an ammonium bifluoride bath to strip
silicon oxide from a defective piece followed by DI water rinses
and a spin dry step. The glass is then returned to the
passivation area for reprocessing.
After passivation, the glass is screen printed with devitrified
liquid glass in a matrix. Subsequent baking causes the
devitrified glass to become vitrified, and the squares are cut
into the patterns outlined by the vitrified glass boundaries.
The saws used to cut the glass employ contact cooling water which
is filtered and discharged to the waste treatment system.
The glass is then cleaned in an alkaline solution and rinsed in
deionized water. Following inspection, a layer of silicon oxide
is evaporated on.to the surface to provide alignment for the
liquid crystal. The two mirror-image pieces of glass are aligned
and heated in a furnace, bonding the vitrified glass and creating
a space between the two pieces of glass. This glass assembly is
immersed in the liquid crystal solution in a vacuum chamber, air
is evacuated, and the liquid crystal is forced into the space
between the glass pieces. The glass is then sealed with epoxy,
vapor-degreased in a solvent, shaped on a diamond wheel,
inspected, and .sent to assembly.
4.2 ELECTRONIC CRYSTALS
4.2.1 Number of Plants
Table 4-1 on page 4-8 presents an estimate of the number of
producers of each type of crystal. Of plants manufacturing
crystals at seventy sites, six are direct dischargers and
sixty-four are indirect dischargers. The last fifteen years have
seen an extremely- rapid evolution of electronic technology. A
major part of that evolution has been the development of single
crystals with unique structural and electronic properties which
serve as essential parts of most microelectronic devices. The
production and use of gallium based crystals are expected to have
a particularly rapid growth over the next decade. Gallium based
crystals have certain advantages over silicon based crystals for
semiconductor applications with respect to circuit speed, power
consumption, and higher temperature capabilities. Consequently
the crystals industry has served an expanding market with an
ever-increasing list of products. Companies comprising the
industry include not only those long-established, but also a
large proportion founded comparatively recently by entrepren-
eurs. Of this latter group some companies have grown
considerably, while others are very small. This growth in the
number of companies is expected to continue.
4-7
-------
TABLE 4-1
PROFILE OF ELECTRONIC CRYSTALS INDUSTRY
Product
Estimated
No. of
Producers(l)
Product
Estimated
No. of
Producers(1)
Piezoelectric
Crystals:
Quartz
Ceramics(2)
YIG
YAG
Lithium Niobate
Liquid Crystals
40
8
3
2
3
Semi-conducting
Crystals:
Silicon 8
Gallium arsenide 8
Gallium phosphide 8
Sapphire 1
GGG 3
Indium arsenide 1
Indium antimonide 1
Bismuth telluride 1
(1)Several producers manufacture more than one product.
(2)Ceramics include lead zirconate, ammonium hydrogen
phosphate, potassium hydrogen phosphate and lead zirconium
titanate.
4-8
-------
4.2.2 Products
Based on their properties and thus their uses in the industry,
electronic crystals can be divided into three types: piezo-
electric, semiconducting, and liquid crystals.
Piezoelectric Crystals -- Piezoelectric crystals are transducers
which interconvert electrical voltage and mechanical force.
There are three principal types: quartz, ceramic, and
yttrium-iron-garnet (YIG), and some other less common types.
Quartz crystals are the most widely used of the piezoelectric
crystals, with applications as timing devices in watches, clocks,
and record players; freqency controllers, modulators, and
demodulators in oscillators; and filters. Some quartz is mined,
but the main supply comes from synthesized material produced by
about forty companies in the United States.
Ceramic crystals are basically fired mixtures of the oxides of
lead, zirconium, and titanium. They are used in transducers,
oscillators, utrasonic cleaners, phonograph cartridges, gas
igniters, audible alarms, keyboard switches, and medical
electronic equipment.
YIG crystals are made by the slow crystal growth of a melt of
yttrium oxide, iron oxide, and lead oxide. Their primary use is
in the microwave industry for low frequency applications as in
sonar. Their incorporation into microwave circuits makes wide-
band tuning possible.
Other potentially useful peizoelectric crystals being developed
or manufactured on a small scale include lithium niobate, bismuth
germanium oxide, and yttrium-aluminum-garnet (Y&G).
Semiconducting Crystals Semiconducting crystals have
properties intermediate between .a conductor and an insulator,
thus allowing for a wide range of applications in the field of
microelectronics. In conductors, current is carried by electrons
that travel freely throughout the atomic lattice of the
substance. In insulators the electrons are tightly bound and are
therefore unavailable to serve as carriers of electric current.
Semiconductors do not ordinarily contain free charge carriers but
generate them with a modest expenditure of energy.
Silicon crystals are widely used in the manufacture of micro
electronic chips: transistors, diodes, rectifiers, other circuit
elements, and solar cells. Crystals of pure silicon are poor
conductors of electricity. In order to make them better
conductors, controlled amounts of impurity atoms are introduced
into the crystal by a process called doping.
4-9
-------
When silicon is doped with an element whose atoms contain more or
fewer valence electrons than silicon, free electrons or electron
"holes" are thus available to be mobilized when a voltage is
applied to the crystal. Phosphorus and boron are common dopants
used in silicon crystals.
Gallium arsenide and gallium phosphide crystals were developed
under the need for a transistor material with good high tempera-
ture properties. These crystals exhibit low field electron
mobility, and are therefore useful at high frequencies, in such
devices as the field effect transistor (FET). The technology of
manufacturing high performance gallium arsenide FET's is maturing
at a rapid rate and the devices are experiencing a greatly
expanding role in oscillators, power amplifiers, and low
noise/high gain applications.
Most gallium arsenide/phosphide is presently being used for
production of light emitting diodes (LEDs) which can convert
electric energy into visible electromagnetic radiation. The
interconversion of light energy and voltage in gallium arsenide
is reversible. Hence this material is also undergoing intensive
development as a solar cell, in which sunlight is converted
directly to electricity.
Indium arsenide and indium antimonide crystals, formed by direct
combination of the elements, are used as components of power
measuring devices. These crystals are uniquely suited to this
function because they demonstrate a phenomenon known as the Hall
Effect, the development of a transverse electric field in a
current-carrying conductor placed in a magnetic field.
Bismuth telluride crystals demonstrate a phenomenon known as
thermoelectric cooling because of the Peltier Effect. When a
current passes across a junction of dissimilar metals, one side
is cooled and the other side heated. If the cold side of the
junction is attached to a heat source, heat will be carried away
to a place where it can be conveniently dissipated. Devices
utilizing this effect are used to cool small components of
electrical circuits.
Sapphire crystals are used by the semiconductor industry as
single crystal wafers which act as inactive substrates for an
epitaxial film of silicon, that is, substrates upon which a thin
layer of silicon is deposited in a single-crystal configuration.
This is referred to as silicon on sapphire (SOS). In addition to
being a dielectric material, single crystal sapphire exhibits a
combination of optical and physical properties which make it
ideal for a variety of demanding optical applications. Sapphire,
the hardest of the oxide crystals, maintains its strength at high
temperatures, has good thermal and excellent electrical
4-10
-------
properties and is chemically inert. Therefore, it can be used in
hostile environments when optical transmission ranging from
vacuum ultraviolet to near infrared is required. Sapphire
crystals have found application in semiconductor substrates.
infrared detector cell windows. UV windows and optics, high power
laser optics, and ultracentrifuge cell windows.
Gallium Gadolinium Garnet (GGG) is the most suitable substrate
for magnetic garnet films because of its excellent chemical.
mechanical, and thermal stability, nearly perfect material and
surface quality, crystalline structure, and the commercial
availability of large diameter substrates. GGG is the standard
substrate material used for epitaxial growth of single crystal
iron garnet films which are used in magnetic bubble domain
technology.
Liquid Crystals -- Liquid crystals are organic compounds or mix-
tures of two or more organic compounds which exhibit properties
of fluidity and molecular order simultaneously over a small
temperature range. An electric field can disrupt the orderly
arrangement of liquid crystal molecules, changing the refractive
properties. This darkens the liquid enough to form visible
characters in a display assembly, even though no light is
generated. This affect is achieved by application of a voltage
and does not require a current flow. Therefore minimal use of
power is required, allowing the display in battery operated
devices to be activated continuously. Liquid crystals are used
in liquid crystal display (LCD) devices for wrist watches,
calculators and other consumer products requiring a low power
display.
4.2.3 Manufacturing Processes and Materials
Piezoelectric Crystals -- The following is a description of the
manufacturing processes used for growth and fabrication of the
three major piezoelectric crystal types: quartz, ceramic, and
yttrium-iron-garnet (YIG).
Quartz Crystals:
The growth of quartz crystals is a hydrothermal process carried
out in an autoclave under high temperature and pressure. The
vessel is typically filled to 80 percent of the free volume with
a solution of sodium hydroxide or sodium carbonate. Particles
of -quartz nutrient are placed in the lower portion of the
vessel where they are dissolved. The quartz is then transferred
by convection currents through the solution and deposited on seed
crystals which are suspended in the upper portion of the vessel.
Seeds are thin wafers or spears of quartz about six inches long.
A vessel normally contains 20 seeds. Nutrient quartz will
4-11
-------
dissolve and deposit onto the seed crystals because a small
temperature gradient exists between the lower and upper portion
of the autoclave, promoting the migration of quartz to the upper
portion of the vessel. Upon completion of the growth cycle (45
to 60 days), crystals are removed and cleaned for the fabrication
process.
The quartz crystals are cut or sliced using diamond blade saws or
slurry saws. Diamond blade saws are used when one wafer at a
time is cut. Slurry saws are utilized in mass production lines
for cutting many wafers at a time. The crystal wafers are then
lapped to the desired thickness. After lapping, the crystal is
usually etched with hydrofluoric acid or ammonium bifluoride and
subsequently rinsed with water. Crystal edges are then beveled
using either a dry grinding grit or a water slurry. Following
this, metals are deposited on the crystal by vacuum deposition.
The crystal wafers are mounted on a masking plate and placed in
an evacuated bell jar. Metal strips in the jar are vaporized,
coating the unmasked area of the wafer. The metal coating (gold.
silver, or aluminum are o.ften used) functions as the crystal's
conducting base. The metal coating operation is covered by
regulations for the Metal Finishing Category. During fine tune
deposition, the crystal is allowed to resonate at a specified
frequency and another thin layer of metal is deposited on it.
Wire leads are attached to the crystal and it is sealed in a
nitrogen atmosphere. At this point the crystal is ready for sale
or insertion into an electronic circuit. Figure A-2 on page 4-13
presents a diagram of the process indicating major waste
generating operations.
Ceramic Crystals:
Ceramic crystal production begins by mixing lead oxide, zirconium
oxide and titanium oxide powders plus small amounts of dopants to
achieve desired specifications in the final product. The powders
are mixed with water to obtain uniform blending, then filtration
takes place and the waste slurry is sent to disposal. This
mixture is roasted, ground wet, and blended with a binder
(polyvinyl alcohol) in a tank called a blundger. The mixture is
then spray dried, pressed, and fired to drive off the binder.
which is not recovered. Formed crystals are enclosed in alumina
and retired. After this final firing crystals are polished.
lapped, and sliced as in quartz production. Electrodes, usually
made of silver, are then attached to the crystals. Approximately
ten percent of the crystals have electrodes deposited by
electroless nickel plating. This plating operation is covered by
regulations for the Metal Finishing Category. Poling, the final
process step, gives the crystal its piezoelectric properties.
This step is performed with the crystal immersed in a mineral oil
bath. Some companies sell the used mineral oil to reclaimers.
After poling the crystal is ready for sale and use. Ceramic
crystal production is very small.
4-12
-------
PROCESS FOR:
aUARTZ CRYSTALS
PROCESS FOR:
SILICON, GALLIUM ARSENIDE, AND
GALLIUM PHOSPHIDE CRYSTALS
MIXING INGREDIENTS
(Gi * Aj) OR FORMING
ELEMENTAL Si FROM
TRICHLOROSILANE
HEAT PROCESS -
FORMATION OF
SINGLE CRYSTALS
1
ABRASIVE SLURRY WASTE
I WATER AND Oil. BASED)
WATER * FLOURIDE + ACID -ť
ABRASIVE SLURRY WASTE
(WATER AND OIL BASED);
POWDER FROM CRYSTAL
MATERIAL
ALUMINA + ETHYLENE
GLYCOL ABRASANT
VARIOUS ACIDS,
BASES, SOLVENTS
FIGURE 4-2. BASIC MANUFACTURING PROCESSES FOR ELECTRONIC CRYSTALS
.4-13
-------
Yttrium-Iron-Garnet (YIG) Crystals:
The production of YIG crystals involves the melting of metal
compounds to form large single crystals which are processed to
yield minute YIG spheres for use in microwave devices. Yttrium
oxide, iron oxide and lead oxide powders are mixed, placed in a
platinum crucible and melted in a furnace. After the melt
equilibrates at this temperature the furnace is cooled, the slag
is poured off. leaving the YIG crystals attached to the
crucible. This growth process takes approximately 28 days. The
crucible is soaked in hydrochloric and nitric acid to remove the
crystals which are then sliced by a diamond blade saw to form
cubes 0.04 inches on a side. These cubes are placed in a
rounding machine, and the rounding process is followed by
polishing to obtain perfectly spherical crystals for use in a
microwave device.
The production of YIG and ceramic crystals with piezoelectric
properties constitutes a minor portion of the piezoelectric
crystal industry. The entire YIG production for the USA is less
than fifteen pounds per year.
Semiconducting Crystals -- Several methods are currently in use
for the production of semiconducting single crystals. An
important method, the Czochralski. functions by lowering a seed
crystal (a small single crystal) into a molten pool of the
crystal material and raising the seed slowly (over a period of
days) with constant slow rotation. Because the temperature of
the melt is just above the melting point, material solidifies
onto the seed crystal, maintaining the same crystal lattice.
Crystals up to 6 inches in diameter and 4 feet long can be grown
by this method. The Czochralski method is used to grow silicon.
sapphire, GGG, and gallium arsenide.
Another method, called the Chalmers method, is usect by some
manufacturers to grow gallium arsenide crystals. If the molten
material is contained in a horizontal boat and cooled slowly from
one end. a solid/liquid interface will pass through the melt.
Under controlled conditions or with the use of a seed crystal the
solid will form as a single crystal.
Silicon Crystals:
The raw material used to produce silicon crystals is polycrys-
talline silicon. Reduction of purified trichlorosilane with
hydrogen is the usual method for producing the high purity
polycrystalline ("poly") silicon. Single crystals of silicon are
then grown by the Czochralski method, the most common crystal
growing technique for semiconductor crystals.
4-14
-------
After a crystal has been grown, the outside diameter is ground to
produce a crystalline rod of constant diameter. The ends are cut
off and used to evaluate the quality of the crystal. At the same
time, its orientation is determined and a flat is ground the
length of the rod to fix its position. Rods ace then sliced into
wafers. Silicon dust and cutting oils mixed with water are waste
products of the grinding and cutting operations.
Lapping is a machining operation using an alumina and ethylene
glycol abrasive medium which produces a flat polished surface and
reduces the thickness of the wafers. After lapping, the wafers
are polished using a hydrated silica medium. The final cleaning
is done with various acids, bases and solvents.
Sapphire and GGG Crystals:
To produce sapphire and gallium gadolinium garnet (GGG) crystals
a raw material called crackle, (high purity alumina waste from a
European gem crystal growing process) is melted in an iridium
crucible. Sapphire is pure alumina. Gadolinium oxide and
gallium oxide powders are added to the crucible if GGG is the
desired product. These are melted using an induction furnace
under a nitrogen atmosphere with a trace of oxygen added.
Crystals are pulled from the melt using the Czochralski method.
These crystals are annealed in oxygen-gas furnaces after growth
in order to remove internal stress and make the crystalline rods
less brittle. Sapphire and GGG rods are ground and sliced using
diamond abrasives and a coolant consisting of a mixture of oil
and water. Wafers are lapped using a diamond abrasive compound
and lubricants, and are polished with a colloidal silica slurry.
GGG wafers are coated with a thin film using liquid-phase
epitaxy. The film has small permanent magnetic domains, which
make it useful for "magnetic bubble" memory devices. The
sapphire wafers are coated with a layer of epitaxial silicon to
produce the SOS substrates for microelectronic chip manufacture.
Other Semiconducting Crystals:
The formation of gallium arsenide, gallium phosphide, and indium
bismuth telluride takes place by a chemical reaction which occurs
in an enclosed capsule. When gallium arsenide or phosphide
crystals are produced, the gallium, on one side of the capsule.
is heated to more than 1200C. The arsenic or phosphorus on the
other side of the capsule is heated separately until it
vaporizes. The vapor and hot metal react to form a molten
compound. (In the case of phosphorus, high pressure is
required.) The molten compound can then be crystallized in situ
by the Chalmers technique or cooled and crystallized by the
Czochralski method. These crystals undergo the fabrication
operations mentioned earlier.
4-15
-------
To produce indium antimonide. indium arsenide and bismuth tellu-
ride, the elements are mixed together, melted to form the com-
pound and frozen into a polycrystalline ingot. These materials
are used in a polycrystalline state so no crystal growing step
occurs. The ingot is fabricated into wafers by normal machining
operations. Because these materials are relatively soft, carbide
abrasives with water cooling are sufficient for machining the
ingots. The wafers are milled into small pieces and incorporated
into electronic' components.
Liquid Crystals Liquid crystals are produced by organic
synthesis. Precursor organic compounds are mixed together and
heated until the reacton is complete. The reacted mass is
dissolved in an organic solvent such as toluene, and is
crystallized and recrystallized several times to obtain a
product of the desired purity. Several of these organic
compounds are then mixed to form a eutectic mixture with the
correct balance of properties for LCD application.
4.3 ELECTRON TUBES (Proposed Under Phase II)
Electron tubes are devices in which electrons or ions are con-
ducted between electrodes through a vacuum or ionized gas within
a gas-tight envelope which may be glass, quartz, ceramic, or
metal. A large variety of electron tubes are manufactured.
including klystrons, magnetrons, cross field amplifiers, and
modulators. These products are used in aircraft and missile
guidance systems, weather radar, and specialized industrial
applications. The Electron Tube subcategory also includes
cathode-ray tubes and T.V. picture tubes that transform
electrical current into visual images. Cathode-ray tubes
generate images by focusing electrons onto a luminescent screen
in a pattern controlled by the electrical field applied to the
tube. In T.V. picture tubes, a stream of high-velocity electrons
scans a luminescent screen. Variations in the electrical
impulses applied to the tube cause changes in the intensity of
the electron stream and generate the image on the screen.
Processes involved in the manufacture of electron tubes include
degreasing of components; application of photoresist, graphite.
and phosphors to glass panels; and sometimes electroplating
operations including etching and machining. The application of
phosphors is unique to T.V. picture tubes and other cathode-ray
tubes. The phosphor materials may include sulphides of cadmium
and zinc and yttrium and europium oxides. The electroplating
operations are covered under the Metal Finishing Category. Raw
materials can include copper and steel as basis materials, and
copper, nickel, silver, gold, rhodium and chromium to be
electroplated. Phosphors, graphite, and protective coatings
4-16
-------
containing toluene or silicates and solders of lead oxide may
also be used. Process chemicals may include hydrofluoric.
hydrochloric, sulfuric. and nitric acids for cleaning and
conditioning of metal parts; and solvents such as methylene
chloride, trichloroethylene. methanol. acetone', and polyvinyl
alcohol.
4.4 PHOSPHORESCENT COATINGS (Proposed Under Phase II As
Luminescent Materials)
Phosphorescent coatings are coatings of certain chemicals, such
as calcium halophosphate and activated zinc sulfide, which emit
light. Phosphorescent coatings are used for a variety of
applications, including fluorescent lamps, high-pressure mercury
vapor lamps, cathode ray and television tubes, lasers, instrument
panels, postage stamps, laundry whiteners, and specialty paints.
This study is restricted to those coatings which are applicable
to the E&EC category, specifically to those used in fluorescent
lamps and television picture tubes. The most important
fluorescent lamp coating is calcium halophosphate phosphor. The
intermediate powders are calcium phosphate and calcium fluoride.
There are three T.V. powders: red. blue, and green. The red
phosphor is yttrium oxide activated with europium; the blue
phosphor is zinc sulfide activated with silver, and the green
phosphor is zinc-cadmium sulfide activated with copper. The
major process steps in producing phosphor escent coatings are
reacting, milling, and firing the raw materials; recrystallizing
raw materials, if necessary; and washing, filtering, and drying
the intermediate and final products.
4.5 CAPACITORS. FIXED
The primary function of capacitors is to store electrical
energy. Fixed capacitors are layered structures of conductive
and dielectric materials. The layering of fixed capacitors is
either in the form of rigid plates or in the form of thin sheets
of flexible material which are rolled. Typical capacitor appli-
cations are energy storage elements, protective devices, filter-
ing devices, and bypass devices. Some typical processes in
manufacturing fixed capacitors are anode fabrication, formation
reactions, dipping, layering, cathode preparation, welding, and
electrical evaluation. All manufacturing processes are covered
under the Metal Finishing category by unit operation. Fixed
capacitor types are distinguished from each other by type of
conducting material, dielectric material, and encapsulating
material.
4.6 CAPACITORS. FLUID FILLED
As with fixed capacitors, the primary function of fluid-filled
capacitors is to store electrical energy. Wet capactitors
4-17
-------
contain a fluid dielectric that separates the anode (in the
center of the device) from the cathode (the capacitor shell).
which also serves to contain the fluid. Fluid-filled capacitors
are used for industrial applications as el.ectrical storage.
filtering, and circuit protection devices. Some typical
processes in manufacturing fluid-filled capacitors are anode
fabrication, formation reactions, metal can preparation.
dielectric addition, soldering, and electrical evaluation. All
manufacturing processes are covered under the Metal Finishing
category by unit operation.
4.7 CARBON AND GRAPHITE PRODUCTS
Carbon and graphite (elemental carbon in amorphous crystalline
form) products exhibit unique electrical, thermal, physical, and
nuclear properties. The major carbon and graphite product areas
are (1) carbon electrodes for aluminum smelting and graphite
furnace electrodes for steel production. (2) graphite molds and
crucibles for metallurgical applications. (3) graphite anodes for
electrolytic cells used for production of such materials as
caustic soda, chlorine, potash, and sodium chlorate, (4)
non-electrical uses such as structural, refractory, and nuclear
applications. (5) carbon and graphite brushes, contacts, and
other products for electrical applications, and (6) carbon and
graphite specialties such as jigs, fixtures, battery carbons,
seals, rings, and rods for electric arc lighting, welding, and
metal coating. The production process starts with weighing the
required quantities of calcined carbon filler, binders, and
additives; combining them as a batch in a heated mixer; and then
forming the resulting "green" mixture by compression molding or
by extrusion. Green bodies are carefully packed and baked for
several weeks. After baking, the items are machined into final
shape.
4.8 MICA PAPER
Mica paper is a dielectric (non-conducting) material used in the
manufacture of fixed capacitors. Mica paper is manufactured in
the following manner: Mica is heated in a kiln and then placed
in a grinder where water is added. The resulting slurry is
passed to a double screen separator where undersized and
oversized particles are separated. The screened slurry flows to
a mixing pit and then to a vortex cleaner. The properly-sized
slurry is processed in a paper-making machine where excess water
is drained or evaporated. The resulting cast sheet of mica paper
is fed on a continuous roller to a radiant heat drying oven.
where it is cured. From there, the mica paper is wound onto
rolls, inspected, and shipped.
4-18
-------
4.9 INCANDESCENT LAMPS
An incandescent lamp is an electrical device that emits light.
Incandescent tungsten filament lamps operate by passage of an
electric current through a conductor (the filament). Heat is
produced in this process, and light is emitted if the temper-
ature reaches approximately 500C. Most lamp-making operations
are highly automated. The mount machine assembles a glass flare,
an exhaust tube, lead-in wires, and molybdenum filament support.
A glass bulb is electrostatically coated with silica and the bulb
and mount are connected at the exhaust and seal machine. The
bulb assembly is annealed, exhausted, filled with an inert gas,
and sealed with a natural gas flame. The finishing machine
solders the lead wires to the metallic base which is then
attached to the bulb assembly by a phenolic resin cement or by a
mechanical crimping operation. The finished lamp is aged and
tested by illuminating it with excess current for a period of
time to stabilize its electrical characteristics.
4.10 FLUORESCENT LAMPS
A fluorescent lamp is an electrical device that emits light by
electrical excitation of phosphors that are coated on the inside
surface of the lamp. Fluorescent lamps utilize a low pressure
mercury arc in argon. Through this process, the lowest excited
state of mercury efficiently produces short wave ultraviolet
radiation at 2,537 Angstroms. Phosphor materials that are
commonly used are calcium halophosphate and magnesium tungstate.
which absorb the ultraviolet photons into their crystalline
structure and re-emit them as visible white light.
There are two types of fluorescent lamps: hot cathode and cold
cathode. Cold cathode manufacture is primarily an electroplating
operation. Hot cathode fluorescent lamp manufacturing is a
highly automated process. Glass tubing is rinsed with deionized
water and gravity-coated with phosphor. Coiled tungsten
filaments are assembled together with lead wires, an exhaust
tube, a glass flare, and a starting device to produce a mount
assembly. The mount assemblies are heat pressed to the two ends
of the glass tubing. The glass tubes are exhausted and filled
with an inert gas. The lead wires are soldered to the base and
the base is attached to the tube ends. The finished lamp
receives a silinone coating solution. The lamp is then aged and
tested before shipment.
4.11 FUEL CELLS
Fuel cells are electrochemical generators in which the chemical
energy from a reaction of air (oxygen) and a conventional fuel is
converted directly into electricity. The major fuel cell
4-19
-------
products, basically in research and development stages, are: (1)
fuel cells for military applications. (2) fuel cells for power
supply to vehicles, (3) fuel cells used as high power sources.
and (4) low temperature and low pressure fuel cells with carbon
electrodes. Some typical processes in the manufacture of fuel
cells are extrusion or machining, heat treating, sintering.
molding, testing, and assembling. Some typical raw materials are
base carbon or graphite, plastics, resins, and Teflon.
4.12 MAGNETIC COATINGS
Magnetic coatings are applied to tapes to allow the recording of
information. Magnetic tapes are used primarily for audio, video.
computer, and instrument recording. The process begins with
milling to create sub-micron magnetic particles. Ferric oxide
particles are used almost exclusively with trace additions of
other particles or alloys for specific applications. The
particles are mixed, through several steps, with a variety of
solvents, resins, and other additives. The coating mix is then
applied to a flexible tape or film material (for example.
cellulose acetate). After the coating mix is applied, particles
are magnetically oriented by passing the tape through a magnetic
field, and the tape is dried and slit for testing and sale.
4.13 RESISTORS
Resistors are devices commonly used as components of electric
circuits to limit current flow or to provide a voltage drop.
Resistors are used for television, radios, and other applica-
tions. Resistors can be made from various materials. Nickel-
chrome alloys, titanium, and other resistive materials can be
vacuum-deposited for thin film resistors. Glass resistors are
also available for many resistor applications. Two examples of
glass resistors are the precision resistor and the low power
resistor.
4.14 TRANSFORMERS. DRY
A transformer is a stationary apparatus for converting electrical
energy at one alternating voltage into electrical energy at
another (usually different) alternating voltage by means of
magnetic coupling (without change of freguency). Dry
transformers use standard metal working and metal finishing
processes (covered by the Metal Finishing category). The main
operations in manufacturing a power transformer are the
manufacture of a steel core, the winding of coils, and the
assembly of the coil/core on some kind of frame or support.
4-20
-------
4.15 TRANSFORMERS. FLUID FILLED
Wet transformers perform the same functions as dry transformers.
but the former are filled with dielectric fluid. Wet tranformers
use standard metal working and metal finishing processes which
are covered by the Metal Finishing category. The only wet
process unique to E&EC are the cleanup and management of residual
dielectric fluid. The main operations in manufacturing a power
transformer are the manufacture of a steel core, the winding of
coils, and the assembly of the coil/core on some Kind of frame or
support. In the manufacture of wet transformers there is the
need for a container or tank to contain the dielectric fluid.
4.16 INSULATED DEVICES. PLASTIC AND PLASTIC LAMINATED
An insulated device is a device that prevents the conductance of
electricity (dielectric). Plastic and plastic laminates are
types of insulators. Plastics are used in electronic
applications as connectors and terminal boards. Other uses
include switch bases, gears, cams, lenses, connectors, plugs.
stand-off insulators. Knobs, handles, and wire ties. Thermo-
setting plastics are melted and injected into a closed mold where
they solidify. These insulating moldings include polyethylene.
polyphenylene, and poly vinyl chloride. Laminates are used in
transformer terminal boards, switchgear arc chutes, motor and
generator slot wedges, motor bearings, structural support, and
spacers. Laminates are made by bonding layers of a reinforcing
web. The reinforcements consist of fiberglass, paper, fabrics.
or synthetic fibers. The bonding resins are usually phenolic.
melamine. polyester, epoxy. and silicone. Laminates are made by
impregnating the reinforcing webs in treating towers, partially
polymerizing, pressing and finally polymerizing them to shape
under heat and pressure. Manufacturing processes associated with
these products are studied as part of the Plastics Molding and
Forming category.
4.17 INSULATED WIRE AND CABLE. NON-FERROUS
Insulated wires and cables are products containing a conductor
covered with a non-conductive material to eliminate shock
hazard. The major products in this segment are: (1) insulated
non-ferrous wire. (2) auto wiring systems, (3) magnetic wire. (4)
bulk cable appliances, and (5) camouflage netting. Typical
processes used in the manufacture of insulated wire and cable are
drawing, spot welding, heat treating, forming, and assembling.
All manufacturing processes are included in the Metal Finishing
category. Some of the basis materials are copper, carbon.
stainless steel, steel, brass-bronze, and aluminum.
4-21
-------
4.18 FERRITE ELECTRONIC PARTS
Ferrite electronic parts are electronic products utilizing
metallic oxides. The metallic oxides have ferromagnetic
properties that offer high resistance, making current losses
extremely low at high frequencies. Ferrite electronic products
include: (1) magnetic recording tape. (2) magnetic tape
transport heads. (3) electronic and aircraft instruments. (4)
microwave connectors and components, and (5) electronic digital
equipment. Some typical processes to manufacture ferrite
electronic parts are shearing, slitting, fabrication and
machining. All production processes in this segment are included
in the Metal Finishing category. Some typical raw materials are
aluminum, magnesium, bronze, and brass.
4.19 MOTORS. GENERATORS. AND ALTERNATORS
Motors are devices that convert electric energy into mechanical
energy. Generators are devices which convert an input mechanical
energy into electrical energy. Alternators are devices that
convert mechanical energy into electrical energy in the form of
an alternating current. The major motor, generator, and
alternator products are: (1) variable speed drives and gear
motors, (2) fractional horsepower motors, (3) hermetic motor
parts, (4) appliance motors. (5) special purpose electric motors.
(6) electrical equipment for internal combustion engines, and (7)
automobile electrical parts. Some typical processes are casting.
stamping, blanking, drawing, welding, heat treating, assembling
and machining. All production processes are included in the
Metal Finishing category. Some basis materials are carbon steel.
copper, aluminum and iron. These materials are used as sheet
metal, rods, bars, strips, coils, casting, and tubing.
4.20 RESISTANCE HEATERS
Resistance heaters convert electrical energy into usable heat
energy. Three types of resistance heaters are made; rigid
encased elements used for electric stoves and ovens, bare wire
heaters used in toasters and hair dryers, and insulated flexible
heater wire that is incorporated into blankets and heating pads.
Some typical processes used in the manufacture of resistance
heaters are plating, welding or soldering, molding, and
machining. These processes are included in the Metal Finishing
category. Some raw materials used are steel, nickel, copper.
plastic, and rubber.
4.21 SWITCHGEAR
Switchgear are products used to control electrical flow and to
protect equipment from electrical power surges and short
4-22
-------
circuits. The major switchgear products are: (1) electrical
power distribution controls and metering panel assemblies, (2)
circuit breakers. (3) relays. (4) switches, and (5) fuses. Some
typical manufacturing processes are: chemical milling, grinding.
electroplating, soldering or welding, machining and assembly.
All processes are included in the Metal Finishing and Plastics
Processing categories. Some typical basis materials are plastic.
steel, copper, brass, and aluminum.
4-23
-------
SECTION 5
WASTEWATER CHARACTERISTICS
This section presents information related to wastewater flows,
wastewater sources, pollutants found, and the sources of these
pollutants. For subcategories which are excluded or proposed under
Phase II, the discussion of wastewater characteristics is
abbreviated. A general discussion of sampling techniques and
wastewater analysis is also provided.
5.1 SAMPLING AND ANALYTICAL PROGRAM
More than 250 plants were contacted to obtain data on the E&EC
Category. Seventy-eight of these plants were visited for an on-site
study of their manufacturing processes, water used and wastewater
treatment. In addition, wastewater samples were collected at
thirty-eight of the plants visited in order to quantitate the level
of pollutants in the waste streams. Sampling was utilized to
determine the source and quantity of pollutants in the raw process
wastewater and the treated effluent from a cross-section of plants
in the E&EC Category.
5.l.1Pollutants Analyzed
The chemical pollutants sought in analytical procedures fall into
three groups: Conventional, non-conventional, and toxics. The
latter group comprises the 126 chemicals found in the priority
pollutant list shown in Table 5-1 (p. 5-11).
Conventional pollutants are those generally treatable by secondary
municipal wastewater treatment. The conventional pollutants
examined for this study are:
pH
Biochemical Oxygen Demand (BOD)
Oil and Grease (O&G)
Total Suspended Solids (TSS)
Non-conventional pollutants are simply those which are neither
conventional nor on the list of toxic pollutants. The non-
conventional pollutants listed on page 5-2 were examined in one or
more subcategories of the E&EC industry.
5-1
-------
Bismuth Hagnanese
Europium Vanadium
Fluoride Boron
Gadolinium Barium
Gallium Molybdenum
Indium Tin
Lithium Cobalt
Niobium Iron
Tellurium Titanium
Total Organic Carbon Xylenes
Total Phenols Alkyl Epoxides
Yttrium Platinum
Calcium Palladium
Magnesium Gold
Aluminum
5.1.2 Sampling Methodology
During the initial visit to a facility, a selection was made of
sampling points so as to best characterize process wastes and
evaluate the efficiency of any wastewater treatment. The nature of
the wastewater flow at each selected sampling point then determined
the method of sampling, i.e., automatic composite or grab
composite. The sampling points were of individual raw or treated
process waste streams, or treated effluent.
Each sample was collected whenever possible by an automatic time
series compositor over a single 24-hour sampling period. When
automatic compositing was not possible or appropriate, as for
volatile organics. grab samples were taken at intervcils over the
same period, and were composited manually. When a sample was taken
for analysis of toxic organics. a blank was also taken to determine
the level of contamination inherent to the sampling and
transportation procedures.
Each sample was divided into several portions and preserved, when
necessary, in accordance with established procedures for the
measurement of toxic and classical pollutants. Samples were shipped
in ice-cooled containers by the best available route to
EPA-contracted laboratories for analysis. Chain of custody for the
samples was maintained through the EPA Sample Control Center
tracking forms.
5.1.3 Analytical Methods
The analytical techniques for the identification and quantitation of
toxic pollutants were those described in Sampling and Analysis
Procedures for Screening of Industrial Effluents for Priority
Pollutants, revised in April 1977.
5-2
-------
In the laboratory, samples for organic pollutant analysis were
separated by specific extraction procedures into acid (A), base/
neutral (B/N), and pesticide (P) fractions. Volatile organic
samples (Ľ) were taken separately as a series of grab samples at
four-hour intervals and composited in the laboratory. The analysis
of these fractions included the application of strict quality
control techniques including the use of standards, blanks, and
spikes. Gas ehroraatography and gas chromatography/mass spectrometry
were the analytical procedure? used for the organic pollutants. Two
other analytical methods were used for the measurement of toxic
metals: Flameless atomic absorption and inductively coupled argon
plasma spectrometric analysis (ICAP). The metals determined by each
method were:
Flameless AA ICAP
Antimony Beryllium
Arsenic Cadmium
Selenium Chromium
Silver Copper
Thallium Lead
Nickel
Zinc
Mercury was analyzed by a special manual cold-vapor atomic
absorption technique.
For the analysis of conventional and non-conventional pollutants.
procedures described by EPA were followed. The following conventions
were used in quantifying the levels determined by analysis:
o Pollutants detected at levels below the quantitation
limit are reported as "less than" (<) the quantitation
limit. All other pollutants are reported as the
measured value.
o Sample Blanks - Blank samples of organic-free dis-
tilled water were placed adjacent to sampling points
to detect airborne contamination of water samples.
These sample blank data are not subtracted from the
analysis results, but. rather, are shown as a (B) next
to the pollutant found in both the sample and the
blank. The tables show data for total toxic organics,
toxic and non-toxic metals, and other pollutants.
o Blank Entries - Entries were left blank when the para-
meter was not detected.
S-3
-------
5.2 SEMICONDUCTORS
5,2.1 Wastewater Flows
Table 5-2 presents a summary of the quantities of wastewater gener-
ated by the Semiconductor subcategory.
TABLE 5-2
SEMICONDUCTOR SUBCATEGORY
PROCESS WASTEWATER FLOW:
Maximum Minimum Average
1/dav (gal/dav) I/day (gal/day) I/day (gal/day)
11.100.000 (2,940.000) 212.000 (56.000) 594,000 (157.000)
CONCENTRATED FLUORIDE WASTEWATER FLOW:
5.450 (1,440) 95 (25) 678 (179)
Total Subcategory Process Water Use = 193,000.000 liters/day
(51,000,000 gal/day)
5.2.2 Wastewater Sources
Contact water is used throughout the production of semiconductors.
Plant incoming water is first pretreated by deionization to provide
ultrapure water for processing steps. This ultrapure water or
deionized (DI) water is used to formulate acids; to rinse wafers
after processing steps; to provide a medium for collecting exhaust
gases from diffusion furnaces, solvents, and acid baths; and to
clean equipment and materials used in semiconductor production.
Water also cools and lubricates the diamond saws and grinding
machines used to slice, lap, and dice wafers during processing.
.5.2.3 Pollutants Found and Sources of These Pollutants
The major pollutants found at facilities in the Semiconductor
subcategory are as follows:
Fluoride
Toxic Organics
pH
5-4
-------
The process steps associated with the sources of these pollutants
are described in Section 4.1.3 (p. 4-2). Table 5-3 (p. 5-13)
summarizes pollutant concentration data for the sampled raw waste
streams. Tables 5-4 through 5-15 (pages 5-15 through 5-73) present
the analytical data for twelve sampled plants in the Semiconductor
subcategory.C1)
Fluoride The source of fluoride is hydrofluoric acid, which is
used as an etchant and a cleaner. Certain areas of the basis
material are etched to provide surfaces receptive to the entry of
dopants that are subsequently added to the wafer. The major source
of fluoride comes from the discharge of spent hydrofluoric acid
after its use in etching. (The flows of this waste steam are shown
in Table 5-2.) Minor quantities of fluoride enter the plant
wastewater from rinses of etched or cleaned wafers.
Toxic organics -- The sources of toxic organics are solvents used
for drying the wafer after rinsing, developing of photoresist.
stripping of photoresist, and cleaning. A further discussion of the
sources of toxic organics is presented in Section 7.
pH This parameter may be very high or very low. High pH results
from the use of alkalis for caustic cleaning. Low pH results from
the use of acids for etching and cleaning.
Several toxic metals were found in the wastewater because of
electroplating operations associated with semiconductor
manufacture. These metals are chromium, copper, nickel and lead.
and are covered under the final electroplating or proposed metal
finishing effluent limitations and standards.
5.3 ELECTRONIC CRYSTALS
5.3.1 Wastewater Flows
The following table (5-16) contains a summary of the wastewater
flows generated in the Electronic Crystals subcategory.
(i) Several corrections have been made to the data tables
presented in the proposed development document of July 1982
(EPA 440/1-82/075-b). Data were either not transcribed or
were incorrectly transcribed from laboratory analytical
reports. In addition, stream descriptions have been changed
to provide consistency among plants (i.e.. frequently plants
title their streams differently).
5-5
-------
TABLE 5-16
SUMMARY OF WASTEWATER QUANTITIES GENERATED
IN THE ELECTRONIC CRYSTALS SUBCATEGORY
Wastewater Discharge Liters/day
No. of Plants Min Max Mean
All Plants 49 95 1.839.800 112.400
5.3.2 Wastewater Sources
The major source of wastewater from the manufacture of electronic
crystals is from rinses associated with crystal fabrication,
although some wastewater may be generated from crystal growing
operations. Fabrication steps generating wastewater are slicing.
lapping, grinding, polishing, etching, and cleaning of grown
crystals. Certain growth processees generate a large volume of
wastewater from the discharge of spent solutions of sodium hydroxide
and sodium carbonate after each crystal growth cycle.
5.3.3 Pollutants Found and the Sources of These Pollutants
The major pollutants of concern from the Electronic Crystals
subcategory are:
Toxic Organics
Fluoride
Arsenic
TSS
PH
The process steps associated with the sources of these pollutants
are described in Section 4.2.3 on page 4-10. Table 5-17 (p. 5-74)
summarizes the occurrence and levels at which these pollutants are
found based on the sampling and analysis of raw wastes from eight
crystals facilities. Concentrations represent total raw wastes
after flow-proportioning individual discharge streams. Tables 5-18
through 5-25 (p. 5-75 through p. 5-94). summarize the analytical
data obtained frome each of the plants sampled and identify products
produced and wastewater flows.C1)
Toxic organics found in wastewater from the manufacture of
electronic crystals as a result of the use of solvents such as
(i) Several corrections have been made to the data tables
presented in the proposed development document of July 1982
(EPA 440/1-82/075-b). Data were either not transcribed or
were incorrectly transcribed from laboratory analytical
reports. In addition, stream descriptions have been changed
to provide consistency among plants (i.e.. frequently plants.
title their streams differently).
5-6
-------
isopropyl alcohol. 1,1.1-triehloroethane, Freon, and acetone. These
materials are used for cleaning and drying of crystals. Another
source of toxic organics could be contaminants in oils used as
lubricants in slicing and grinding operations. A further discussion
of the sources of toxic organics is presented in Section 7.
Fluoride -- has as its source the use of hydrofluoric acid or
ammonium bifluoride for etching electronic crystals. A minor source
of fluoride is from the etch rinse process.
Arsenic -- originates from the gallium arsenide and indium arsenide
used as raw material for crystals. Process steps generating
wastewater containing arsenic are cleaning of the crystal-growing
equipment, slicing and grinding operations, and etching and rinsing
steps.
Total Suspended Solids -- common in crystals manufacturing waste
streams as crystal grit from slicing and grinding operations. Grit
and abrasives wastes are also generated by grinding and lapping
operations.
pH may be very high or very low. High pH results from the
presence of excess alkali such as sodium hydroxide or sodium
carbonate. The alkali may come from crystal growth processes or
from caustic cleaning and rinsing. Low pH results from the use of
acid for etching and cleaning operations.
Several toxic metals were found in the wastewater because of
electroplating operations associated with electronic crystals
manufacture. These metals are chromium, copper, lead, nickel, and
zinc, and are regulated under the Metal Finishing Category.
5.4 CARBON AND GRAPHITS PRODUCTS
The average flow of wastewater from these plants is 24.2 x 106 I/day
(6,388,400 gal/day). The major pollutants found and their
concentrations are presented below:
Toxic Pollutants
Raw Waste Load
Concentration Raw Waste Load
Pollutant (mq/1) kg/day (Ibs/day)
Total Toxic Inorganics 0.080 1.93 (4.26)
Bis(2-ethylhexyl)phthalate 0.042 1.02 (2.24)
Methylene Chloride 0.013 0.31 (0.69)
Total Toxic Organics 0.080 1.93 (4.26)
5-7
-------
Raw waste concentrations are based on flow weighted means from four
plants. For toxic inorganics only flow weighted mean concentra-
tions greater than or equal to 0.1 mg/1 are shown. For toxic
organics only flow weighted mean concentrations greater or equal to
O.O1 mg/1 are shown.
5.5 MICA P&PER
The average flow of wastewater from these plants is 3.50 x 106 I/day
(926,000 gal/day). The major pollutants found and their concentra-
tions are presented below:
Toxic Pollutants
Raw Waste Load
Concentration Raw Waste Load
Pollutant (mcr/1) kg/day (1 bs / day)
Total Toxic Inorganics 0.055 0.20 (0.44)
1,1,1-Trichloroethane 0.180* 0.63 (1.39)
Methylene Chloride 0.029* 0.10 (0.22)
Total Toxic Organics 0.209 0.73 (1.61)
*Not confirmed by process or raw material usage.
Raw waste concentrations are based on raw waste data from one
plant. For toxic organics only concentrations greater than or equal
to 0.01 mg/1 are shown.
5.6 INCANDESCENT LAMPS
MThe average flow of wastewater from these plants is 7.74 x 10.6 I/day
^(540,100 galYday). The major pollutants found and their concentra-
tions are described below:
Toxic Pollutants
Raw Waste Load
Concentration Raw Waste Load
Pollutant (mg/1) kg/day (Ibs/day)
Chromium 0.714 1.46 (3.22)
Copper 0.420 0.86 (1.89)
Lead 0.11 0.23 (0.50)
Total Toxic Inorganics 1.377 2.82 (6.21)
Methylene Chloride 0.048 0.05 (0.11)
Chloroform 0.024 0.10 (O.22)
Dichlorobromomethane 0.010 0.03 (0.05)
Total Toxic Organics 0.082 0.17 (0.38)
5-8
-------
Raw waste concentrations are based on flow weighted means from three
plants. For toxic inorganics only flow weighted mean concentrations
greater than or equal to 0.1 mg/1 are shown. For toxic organics
only flow weighted mean concentrations greater than or equal to 0.01
mg/1 are shown.
5.7 FLUORESCENT LAMPS
The major pollutants found in wastewaters from these plants and
their concentrations or mass loadings are presented below:
Toxic Pollutants
Raw Waste Load
Concentration Raw Waste Load
Pollutant (ma/1) kg/day (Ibs/day)
Antimony 0.458
Cadmium 0.307
Total Toxic Inorganics -- 0.80 (1.76)
Methylene Chloride 0.063
Toluene 0.011
Total Toxic Organics 0.07 (0.16)
5.8 FUEL CELLS
Only a few plants manufacture fuel cells and these do not do so on a
regular basis. In addition, all pollutants found were at quantities
too low to be effectively treated.
5.9 MAGNETIC COATINGS
This subcategory discharges only a small amount of pollutants to
water. The average wastewater discharge from this subcategory is
19.000 I/day (5.000 gal/day). The total toxic metals discharge for
the subcategory is 0.045 kg/day (0.099 Ibs/day). total toxic
organics is 0.018 kg/day (0.040 Ibs/day).
5.10 RESISTORS
No wastewaters result from the manufacture of resistors.
5.11 DRY TRANSFORMERS
No wastewaters result from the manufacture of dry transformers.
5-9
-------
5.12 ELECTRON TUBES (Phase II)
The agency has proposed regulations for this subcategory under
Electrical and Electronic Components, Phase II.
5.13 PHOSPHORESCENT COATINGS (Phase II)
The Agency has proposed regulations for this subcategory as
luminescent materials under Electrical and Electronic Components,
Phase II.
5.14 ALL OTHER SUBCATEGORISS
Information obtained from plant visits showed that wastewater
discharges in the following subcategories result primarily from
processes associated with metal finishing and, in the case of
insulated plastic and plastic-laminated devices, from processes
associated with the EPA study on plastics molding and forming.
Because these processes are studied elsewhere, the E&EC project
limited its sampling effort in these areas.
Switchgear and Fuses
Resistance Heaters
Ferrite Electronic Parts
Insulated Wire and Cable
Fluid-filled Capacitors
Fluid-filled Transformers
Insulated Devices Plastics and Plastic Laminated
Motors. Generators, and Alternators
Fixed Capacitors
5-10
-------
5--1
THE PRIORITY POLLUTANTS
Ul
I
H
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11,
12.
13.
14.
15.
16.
18.
19.
20.
21.
22.
23.
24.
25.
26,
27.
28.
29.
30.
31.
32.
33.
34.
35.
36.
31.
38.
39.
40.
41.
42.
43.
44.
45.
Acenaphthene 46.
Rcrolein 47,
*crylonttrlle 48.
Benzene SI.
Benzidine 52.
Carbon Tetrachlorlde (Tetrachloroaaethane) 53.
chlorobenzene . 54.
1,2,4-frichlorobenzene 55.
Hexachlorobenzene 56.
1,2-Dlchlorethane 57.
1,1,1-Trtchloroethane 58.
llexach loroethane 59.
1,1-Dlchloroethane 60.
1,1,2-Trlchloroethane 61.
1,1,2,2-fetrachloroethane 62,
chloroethane 63.
Bls(2-chloroethyl>ether 64.
2-Chloroethyl Vinyl Ether (Mixed) 65.
2-Chloronaphthalenc 66.
2,4,6-Trlchlorophenol 67.
p-chloro-m-cresol 68.
Chloroform (Trlchloromethane) 69.
2-Chlorophenol 70.
2-Dichlorobenzene 71.
3-Dlchlorobenzene 12,
4-Dlchlorobenzene 13.
S'-Dlchlorobenzldine 74.
1-Dlchloroethylene 75.
2-trans-Dichloroethylene 76.
2,4-Dlchlorophenol 77.
1,2-Dlchloropropane 18.
1.3-Dlchloropropylene(1.3-Dlrhloropropene) 79.
2,4-Dlraethyl Phenol 80.
2,4-Dlnltrotoluene 81.
2,6-Dlnttrotoluene 82.
1,2-Dlphenylhydrazlne 83.
Ethylbenzene 84,
Fluoranthene 85.
4-chlorophenyl Phenyl Ether 86,
4-Bromophenyl Phenyl Ether 87.
Bls(2-chlorolsopropyl)ethRr 88.
Bls(2-chloroethoxy)methane 89.
Methylene chlorlde(Dlchloromethane) 90.
Methyl Chlorlde(Chlorocnethane)
Methyl Bromide (Bromomethane)
Bromotorn (Trlbromomethane)
Dlch lorobrcmcxne thane
Chlorodlbromomethane
Hexachlorobutadlene
Hexachlorocyclopentadlene
Isophorone
Naphthalene
Nitrobenzene
2-Nltrophenol
4-Hltrophenol
2,4-Dtnltrophenol
4,6-Dlnltro- o-cresol
N-Nltrosodlmethylamlne
N-Nltrosodlphenylamlne
N-Hltrosodl-n- propylamlne
Pentachlorophenol
Phenol
Bls(2-ethylhexyl) Phthalate
Butyl Benzyl Phthalate
Dl-n-butyl Phthalate
Dt-n-octyl Phthalate
Diethyl Phthalate
Dimethyl Phthalate
1,2--Benzanthracene [Bcnzo(a)anthraceneJ
Benzo(a)Pyrene (3,4-Benzopyrene)
3,4-Benzofluoranthene (Benzo(b)fluoranthpne]
11,12-Benzofluoranthene [BeiuoSkjfluorantheno)
Chrysene
Acenaphthylene
Anthracene
1.12-Benzoperylpne [Bf>nx.o(ghl)petyli;n<>]
Fluorene
Phenanthrene
1,2,5,6- Dlbenzathracene (r>tb("nzo(a,h)anthra<-i'nel
Indeno(1.2,3-cd)pyrŤne (2,3 O PhfnylenepyiPnu)
Pyrene
Tetrachloroethylene
Toluene
Trlchloroethylene
Vinyl Chloride (chloroethylmie)
Aldrln
Dleldrln
-------
THE
Ul
I
H
TOXIC POLLUTKHT
91. Chlordans
(Technical Mixture and Hetabolltes)
92. 4,
-------
TABLE 5-3
SEMICONDUCTOR
SUMMARY OF THE RAW WASTE DATA
Toxic Organics
Parameter
Plant 42044
mg/1
Plant 04294
mg/1
8 1.2.4-Trichlorobenzene
21 2.4.6-Trichlorophenol
23 Chloroform
25 1.2-Dichlorobenzene
26 1.3-Dichlorobenzene
27 1.4-Dichlorobenzene
38 Ethylbenzene
44 Methylene chloride
55 Naphthalene
57 2-Nitrophenol
64 Pentachlorophenol
65 Phenol
66 Bis(2-ethylhexyl)
phthalate
68 Di-n-butyl phthalate
85 Tetrachloroethylene
87 Trichloroethylene
ND**
ND
<0.01
0.04
<0.01
<0.01
ND
0.044
ND
ND
ND
0.180
0.010
<0.01
O.O15
ND
27.1
0.013
0.012
186.0
7.4
7.4
0.107
0.101
1.504
0.039
0.250
0.170
0.012
0.017
0.143
0.204
TOTAL TOXIC ORGANICS
0.279
230.472
* This table shows the range of toxic organics observed.
** Not detected
5-13
-------
TABLE 5-3
SEMICONDUCTOR
SUMMARY OP RAW WASTE DATA
TOXIC METALS
Min. Con. Max. Cone. Mean Cone,
Parameter roq/1 ntq/1 mq/1
114 Antimony <0.001 0.187 0.013
115 Arsenic <0.003 0.067 0.015
117 Beryllium <0.001 <0.015_ <0.001
118 Cadmium <0.001 0.008 0.003
119 Chromium t <0.001 1.150 0.146
120 Copper t <0.005 2.588 0.570
122 Lead t <0.04 1.459 0.135
123 Mercury <0.001 0.051 0.003
124 Nickel t 0.005 4.964 0.500
125 Selenium <0.002 0.045 0.015
126 Silver <0.001 0.013 0.002
127 Thallium <0.001 0.012 <0.001
128 Zinc. 0.001 0.289 0.092
Total Toxic Inorganics 0.063 10.848 1.496
CONVENTIONAL POLLUTANTS
Oil & Grease ND
Total Suspended Solids* ND
Biochemical Oxygen Demand ND
NON-CONVENTIONAL POLLUTANTS
Total Organic Carbon ND
Fluoride 26.6
6.8
14
30
80
146.5
3.9
6.9
21.3
55.7
65.5
t - These metals are associated with metal finishing
operations.
ND - Not detected.
* - Data for TSS is from plants producing semiconductors only,
5-14
-------
TABLE 5-4
SEMICONDUCTOR PROCESS WASTES
PLANT 02040
Stream Description
Flow It /hr>
Duration (hrs)
sample ID No.
TOXIC ORGAMICS
4 Benzene
7 chlorobenzene
8 1,2,4-Trlchlorobenzene
11 1,1,1-Trichloroethane
13 1,1-Dlchloroethane
23 Chloroform
24 2-Cnlorophenol
25 1,2-Bichlorobenzene
27 1,4-Dlchlorobenzene
29 1.1-Dichloroethylene
38 Ethylbenzene
44 Methylene chloride
48 Dlchlorobrocnomethane
51 chlorodibromomethane
m 57 2-dltrophenol
I 58 4-Nitrophenol
I-1 65 Phenol
01 66 Bis(2-ethylhexyl)phthalate
67 Butyl benzyl phthalate
68 Di-N-butyl phthalate
69 Di-N-octyl phthalate
70 Dlethyl phthalate
71 DlBtethyl phthalate
86 Toluene
87 Trichloroethylene
121 Cyanide*
Total Toxic Organics
TOXIC INORGANICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 chromium
120 copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
Scrubber Vastest
5437
24
3480
Concentration Mass Load
mg/t kg/day
Equipment Cleaning Vastest
31.5
24
3481
Concentration Mass Load
mg/l kg/day
Wafer Finishing Hastes
2178
24
3477
Concentration Mass Load
mg/l kg/day
<0.01
0.01
0.047
0.012
<0,01
<0.005
0.006
<0.001
<0.001
0.009
0.002
<0.001
<0.001
<0.001
<0.003
0.0008
0.001
0.0003
<0.005
0.074
<0.001
0.05
<0.001
<0.001
0.25
<0.001
0.90
<0.003
0.00006
0.00004
0.0002
0.0007
0.046
<0.01
<0.01
<0.01
0.010
<0.01
<0.0l
<0.01
0.105
<0.005
0.004
<0.001
<0.001
<0.001
0.056
0.034
0.001
<0.001
0.003
0.0025
0.0006
0.002
0.0005
0.0005
0.0055
0.0002
0.003
0.002
0.00005
<0.005
0.01
<0.00l
0.002
0.341
0.413
0.025
<0,001
4.964
<0.003
12.24
0.56
0.76
4.56
Effluent
463505
24
3478
Concentration Mass Load
kg/day
<0.01
<0.01
1.10
<0.01
0.05
<0.01
0.068
0,410
<0.01
<0,01
0.095
<0.01
<0.01
<0.01
0.270
0.019
<0.01
<0.01
<0.01
0.14
<0.01
<0.005
2,152
3.0
0.21
1.56
23.94
0.11
0.02
3.79
4.59
0,28
55.2
* Mot included in Total Toxic Organics summation.
t Organics not analyzed.
-------
TABLE 5-4 (Continued)
SBHICOMDUeTOR PROCESS WASTES
PUIHT 02040
Ul
I
H
O1
Stream Description
Flow (I /hr)
Duration (hrs)
Sample ID No.
TOXIC IHORGANICS (Continued)
126 Silver
127 Thallium
128 Zinc
Total foxlc Inorganics
KON-CGNVSHTIONAL POLLUfftMIS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
yttrium
Phenols
Total Organic Carbon
Fluoride
CONVENTIOHAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
pH
Scrubber Wastes
5437
24
3480
Concentration Mass toad
mg/l kg/day
Equipment Cleaning Wastes
31.5
24
3481
Concentration Mass Load
mg/l kg/day
Wafer Finishing Wastes
2178
24
3477
Concentration Mass load
mg/l kg/day
Effluent
463505
24
3478
Concentration Mass Load
mg/l kg/day
<0.005
<0,025
0.04
0.057
<0.001
0.026
0.267
36,36
0.002
<0.02
0.012
19.34
0.009
0.005
<0.08
<0.05
50.52
<0.02
0.016
0.001
0.130
<0.001
0.009
6 ft
0.48 ť
<2
<5
0.005
0.007
0.003
0.035
0.0003
0.0016
0.0012
0.0007
0.0021
o.on
0.0012
0.783
0.063
0.26
0.65
<0.005
<0.025
O.BO
2.076
16.31
0.05
60.66
45.92
0.48
<0.02
0.46
23.78
<0.001
0.57
<0.08
<0.05
161.57
<0.02
1.01
0.03
0.16
<0.001
290
0.0006
0.0016
0.012
0.00004
0.046
0.0004
0.0003
0.0004
0.0008
0.00002
0.0001
0.22
NA
NA
NA
<0.005
<0.025
0.070
0.165
0.155
0.003
0.251
1.710
<0.001
<0.02
0.109
0.319
0.001
0.008
<0.08
<0.05
73.021
<0.02
0.047
0.022
0.003
<0.001
0.039
26
0.27
7.0
5.0
15
0.0037
0.0086
0.008
0.0002
0.013
0.0057
0.00005
0.0042
0.0025
0.001
0.00016
0.002
1.36
0.014
0.37
0.26
0.78
<0.005
<0.025
0.111
5.866
1.23
65.25
0.323
0.024
0.690
46.1
0.147
<0.02
0.813
17.12
0.014
0.006
<0.08
<0.05
192.501
<0.02
0.297
0.003
0.123
<0.001
6.1
37
52.0
3.59
0.27
7.68
1.64
9.04
0.16
0.067
3.30
0.03
1.37
67.9
411.6
578.5
4
62
52
44.5
689.7
578.5
ft* Data Incorrectly transcribed at proposal, (see note on page 5-5.)
-------
TABLE 5-4 (Continued)
SEMICONDUCTOR PROCESS WASTES
PLNfT 02040
Stream Description
Plow (I /hr)
Duration (hrs)
Saaple ID No.
TOXIC OROANICS
Wafer Finishing Wastes
10402
24
03476
concentration Maes Load
Ťg/t kg/day
Scrubber Vastest
2580
24
03479
Concentration Mass Load
og/l kg/day
4 Benzene
7 Chlorobenzene
8 1,2,4-lrichlorobenzene
11 1,1.1-Trichloroethane <0.01
13 1,1-Dichloroethane 0.01
23 Chloroform 0.02
24 2-Chlorophenol
25 1,2-Dichlorobenzene <0.01
27 1,4-Dichlorobenzene
29 1,1-Dichloroethylene
38 Ethylbenzene
44 Kethylene chloride 0,035
51 Chlorodibromoinethane
Cfi 57 2-Hitrophenol
I 58 4-Nitrophenol
{"! 65 Phenol 0.031
66 Bis(2-ethylhe!iyl)phthalate <0.01
67 Butyl benzyl phthalate
68 Di-M-butyl phthalate <0.01
69 Di-Ť-octyl phthalat*
70 Diethyl phthalate <0.01
11 Dimethyl phthalate
86 Toluene
87 Trichloroethylene
121 Cyanide*
Total Toxic Organics 0.086
TOXIC INORGANICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 chromium
120 copper
122 Lead
123 Hercury
124 Nickel
125 Selenium
0.007
0.003
<0.001
<0.001
<0.001
0.046
0.001
<0.001
<0.001
<0.003
NA
0.002
0.005
0.009
o.ooa
0.021
0.002
0.001
0.012
0.0002
0.017
0.007
<0.001
<0.001
0.011
0.007
<0.001
<0.001
<0.001
<0.003
0.001
0.0004
0.0007
0.0004
* Hot included in Total Toxic Organics summation.
t Organics not analyzed
-------
TABLE 5-4 (Continued)
SSmCOKDUCrOR PROCESS WASTES
PLANT 02040
stream Description
Plow (I /hr)
Duration (hrs)
Sanple ID Ho.
TOXIC INORGANICS (Continued)
126 Silver
127 thallium
128 Zinc
Total Toxic Inorganics
HON-CONVEHTIOHftL POLUWMITS
Water Finishing Wastes
10402
24
03476
Concentration Mass toad
3/1 kg/day
Scrubber Wastes
2580
24
03479
concentration Mass Load
ťf/l kg/day
Ul
1
J '
00
aluminum
Barium
Boron
Caiciun
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Phenols
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
pH
<0.005
<0.025
1.113
0.015
0.024
0.222
28.040
<0.001
<0.020
0.169
13.500
0.006
0.001
<0.080
<0.050
111.601
<0.020
0.023
0.006
0.091
<0.001
0.032
137 f
0.48
9.0
385
310
0.278
0.004
0.006
0.055
0.042
0.002
0.0002
0.006
0.002
0.023
0.008
34.2
0.12
2.247
220.9
77.39
<0.005
<0.025
0.059
<0.001
0.026
0.164
35.830
0.003
<0.020
0.047
19.080
eO.OOl
0.004
<0.080
<0.050
49.711
<0.020
0.011
-------
TABLE 5-5
SBHICOHDUetOR PROCESS HASTES
PUWT 02347
Stream Description
Flow (I /hr)
Duration (hrs)
Sample ID Mo.
TOXIC O8GRMICS
4 Benzene
7 Chlorobenzene
8 1,2.4-Trlchlorobenzene
11 1,1.1-Trichloroethane
23 Chloroform
24 2-chlorophenol
25 1,2-Dlchlorobenzene
27 1,4-Dlchlorobenzene
29 1,1-Dichloroethylene
31 2,4-Dichlorophenol
37 1,2-Diphenylhydrazlne
38 Ethylbenzene
39 Fluoranthene
in 44 Hethylene chloride
I 55 Naphthalene
{jj 57 2-Mitrophenol
65 Phenol
66 Bis(2-ethylhexyl)phthalate
67 Butyl benzyl phthalate
68 Di-N butyl phthalate
69 Di-N-octyl phthalate
70 Diethy 1 phthalate
85 Tetrachloroethylene
86 Toluene
87 Trichloroethylene tf
121 Cyanide*
Total Toxic Organlcs
TOXIC INORGftHICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
Scrubber Hastes
6099
24
03474
Concentration Mass Load
rag/I kg/day
Effluent
130,688
24
03475
Concentration Mass Load
ng/t kg/day
0.190
0.170
2.6
0.011
<0.01
<0.01
<0.01
1.9
0.220
<0.01
<0.01
<0.01
HA
5.091
<0.005
0.003
<0.001
<0,001
<0.001
<0.001
<0.001
0.001
<0.001
<0.003
0.128
0.025
0.38
0.0016
0.278
0.032
0.745
0.0004
0.00015
<0.01 t
0.089
3.5 I*
0.022
<0.01
0.860
0.170
0.017
<0.01
<0.01
<0.01
2.4
<0.01
<0.01
0.810
0.013
<0.01
<0.01
<0.01
20.0 I
<0.0l
0.075 *
27.881
<0.005
0.002
<0.001
<0.001
0.110
1.182
0.042
0.001
<0.001
<0.003
0.279
10.98
0.069
0.53
0.053
7.53
2.54
0.04
62.73
0.235
87.45
0.0063
0.345
3.71
0.132
0.003
* Mot Included In Total Toxic Organlcs summation.
I Data not transcribed from analytical sheets at proposal. (See note on page 5-5.)
M Data Incorrectly transcribed at proposal. (See note on page 5-5.)
-------
TMIS 5-5 (Continued)
SaUCOMDOCtOR P80C8SS WASTES
PLANT 02347
Ui
I
W
o
Stream Description
Flow U /hr)
Duration (hrs)
Sample ID Ho.
TOXIC IHOROAHICS (Continued)
126 Silver
127 Thai HUB
128 Zinc
Total Toxic Inorganics
HOH-COHVBOTIONAL POLLUTANTS
Aluminum
Barium
Boron
Calclun
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladlun
Platinum
Sodlua
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended solids
Biochemical Oxygen Demand
pM
6099
24
03474
Concentration
g/l
<0.005
<0.025
0.052
0.056
0.009
0.039
0.121
42.31
<0.001
<0.02
0.016 ft
11.02
<0.001
0.008
<0.08
<0.05
43.321
<0.02
0.011 M
<0.001 M
0.068
0.001
0.88
10
1.7
<5 S
<2 t
NA
Wastes
Haas Load
kg/day
0.0076
0.008
0.0013
0.006
0.018
0.0023
0.001
0.002
0.003
0.01
0.129
1.46
0.25
Effluent
130,668
24
03475
Concentration Bass Load
ng/1
<0.005
<0.025
0.089
1.426
0.02
0.015
0.76
14.31
<0.001
<0.02
0.106
3.542
0.001
<0.001
<0.08
<0.05
116.2
<0.02
0.029
<0.001
0.015
<0.001
14
38
50
<5
<2
NA
kg/day
0.28
4.473
0.063
0.05
2.38
0.38
0.003
0.091
0.047
43.9
119.2
156.8
Data not transcribed from analytical sheets at proposal. (See note on page 5-5.)
it Data Incorrectly transcribed at proposal. (See note on page 5-5.)
-------
ťBLI 5-6
SEMICONDUCTOR PROCESS WASTES
PLANT 04294
U1
I
to
Stream Description
Flow (t/hr)
Duration (hrs)
sample ID Ho.
TOXIC 08GMHCS
4 Benzene
7 Chlorobenzene
8 1,2,4-Trlchlorobenzene
11 1,1,1-Trlchloroethane
13 1,1-Dlchloroethane
21 2.4.6-Trlchlorophenol
23 Chloroform
24 2-Chlorophenol
25 1,2-Dlchlorobenzene
26 1,3-Dlchlorobenzene
27 1,4-Dlchlorobenzene
34 2.4-Dlinethylphenol
37 l,2-01phenylhydrazlne
38 Sthylbenzene
39 Fluoranthene
44 Hethylene chloride
48 Dlchlorobronomethane
51 Chlorodlbromomethane
54 Isophorone
55 Naphthalene
57 2-Nltrophenol
58 4-Mltrophenol
64 Pentachlorophenol
65 Phenol
66 Bls{2-ethylhexyl)phthalate
67 Butyl benzyl phthalate
68 Dt~H-butyl phthalate
69 Dl-H-oetyl phthalate
70 Dlethyl phthalate
71 Dimethyl phthalate
85 Tetrachloroethylene
86 Toluene
87 Trlchloroethylene
97 Endosulfan sulfate
103 Beta BHC
104 Gamma BHC
121 Cyanide*
Total Toxic organics
Developer Quench Rinse
Acid Hastes
3647
Concentration
ťg/t
Hass Load
kg/day
3643
Concentration
mg/l
<0.01
Hass Load
kg/day
0.026
<0.01
0.042
<0.01
<0.01
<0.01
<0.01
<0.01
<0,01
<0.01
<0.01
0,017
<0.01
<0.005 *
0.085
<0.01
<0.01
<0.01
<0.01
<0.0l
<0.01
<0.01
<0.01
<0.01
<0.01
<0,005
-------
fABLB 5-6 (Continued)
sEmcoNoocfoa PROCESS WASTES
PUNT 04294
Ui
I
Stream Description
Flow (l/hr)
Duration (hrs)
Sample ID Ho.
TOXIC INORGANICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 chromium
120 Copper
122 Lead
123 Mercury
124 Mickel
125 Selenium
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
Developer Quench Rinse
3641
Concentration Mass Load
kg/day
<0.005
<0.003
<0.001
0.003
0.004
0,015
0.019
<0.001
0.057
<0.003
<0.003
<0.025
0.022
0.120
Acid Wastes Stripper Quench Rinse
110ť*
24
3643 3645
Concentration Mass Load Concentration Bass Load
Ťg/l kg/day mg/t leg/day
0.005
<0.003
<0.001
0.003
0.003
0.046
0.161
<0.001
0.07
<0.003
<0.003
<0.025
0.048
0.331
Etching solution*
3648
Concentration Mass toad
wg/l teg/day
<0.005
<0.003
cO.OOl
0.001 0.000003
0.001 0.000003
0.019 0.00005
0.012 0.00003
<0.001
0.005 0.00001
<0.003
<0.003
<0.025
0.032 O.OQOOB
0.07 0.0002
NON-CONVENTIOHftL POLLUTANTS
Aluminum
Bariura
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
platinum
Sodium
Telluriura
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
0.046
0.004
0.026 *
1.718
<0.001
0.055
0.077
0.001
0.004
0.071
0.023
0.002
0.001
0.005
0.014
30
0.15
5.781
0.011
19.961
2.371
<0.001
0.149
0.142
0.006
0.019
18.315
0.203
0.036
0.081
<0.001
0.016
<1.0
875
0.031
0.006
0.028
0.258
<0,00l
0.026
0.034
0.001
cO.OOl
0.143
0.006
0.001
0.001
0.001
0.007
<1.0
0.24
0,00008
0.00002
0.00007
0.0007
0.00007
0.00009
0.000003
0.0004
0.00002
0.000003
0.000003
0.000003
0.00002
0.0006
** Estimated flow
t Inorganics and non-conventionals were not analyzed
Data not transcribed from analytical sheets at proposal.
(See note on page 5-5.)
-------
TABLE 5-6 (Continued)
SEMICONDUCTOR PROCBSS HASTES
PLANT 04294
Stream Description Developer Quench Rinse Acid Wastes Stripper Quench Rinse Etching Solution*
Flow (l/hr) 110**
Duration (hrs) ' 24
Sample ID No. 364? 3643 3645 3648
Concentration Mass Load concentration Mass Load Concentration Mass Load Concentration Mass Load
tag/I kg/day mg/l kg/da; mg/l kg/day mg/l kg/day
CONVENTIONAL POLLUTANTS
Oil 6 Grease 3.0 <1.0 1.0 0.003
Total Suspended Solids <5.0 31.0 <5.0
Biochemical Oxygen Demand <4.0 <4.0 <4.0
PM
** Estimated flow
t Conventional pollutants were not analyzed
in
I
ts3
CO
-------
TABLE 5-6 (continued*/
SEMICONDUCTOR PROCESS WASTES
PLAHT 04294
Ul
I
to
*ť
streaM Description
Plow (l/hr)
Duration (hrs)
Sample ID Ho.
TOXIC ORGWIICS
Acid Wastes
3650t
Concentration Mass Load
Ťg/l rag/day
Sfflucnt
6273
24
3652
Concentration Mass Load
eg/I nig/day
Vafer Finishing wastes Stripper Quench Rinse Photoresist Developer
3641
Concentration Mass Load
ťg/l kg/day
Batch
3644f
Concentration Kass Load
mg/l kg/day
Batch
3646f
Concentration Mass Load
mg/l kg/day
4 Benzene
1 Chlorobenzene
8 1,2,4-Trichlorobenzene
11 1,1,1-Trichloroethane
13 1,1-Dichloroethanc
18 Bis(2-chloroethyl)ether
21 2,4,6-Trlchlorophenol
22 P-chloro-m-cresol
23 Chloroform
24 2-Chlorophenol
25 1,2-Dichlorobenzene
26 1,3-Diehlorobenzene
27 1,4-Dlchlorobenzene
34 2,4 -Dlmethylphenol
31 1,2-Diphenylhydrazine
38 Ethylbenzene
39 Fluoranthene
44 ttethylene chloride
47 Bromoforra
48 Dlchlorobrotnomethane
51 Chlorodlbromomethane
54 Isophorone
55 naphthalene
57 2-Nitrophenol
58 4-Hitrophenol
62 H-JUtrosodiphenylawine
64 Pentachlorophenol
65 Phenol
66 Bls(2-ethylhe3tyl)
phthalate
67 Butyl benzyl phthalate
68 Di-H-butyl phthalate
69 Di-H-octyl phthalate
70 Diethyl phthalate
85 tetrachloroethylene
86 Toluene
87 frichloroethylene
102 Alpha BHC
103 Beta BHC
104 Gauma BHC
121 cyanide*
Total Toxic Organics
<0.01 #
<0.01
<0.01 *
<0.01
27.1
0.013
0.012
<0.01
186.0
7.4 *
7.4 t#
0.107
0.101
<0.006
1.504
0.039
0.250
0.170
0.012
0.017
0.143
<0.003
0.204
<0.005
230.472 ť*
4.08
0.002
0.0018
28.0
2.23
2.23
0.016
0.015
0.226
0.006
0.038
0.026
0.0018
0.0026
0.022
0.031
36.938
<0.01 *
0.043 *
0.046 Ť
<0.01
0.030 I
0.019 *
<0.01 tt
<0.01
<0.01
<0.01
<0.01
<0.01 *
<0.005 *
0.095
0.032 t
0.013
<0.005
0.045 *
<0.01 ft
<0.01 8
0.925 *
0.052 It
<0.01
<0,005 It
1.02 ť
* Mot Included in Total Toxic Organics sunwation.
f Volatile organics were not analyzed
Data not transcribed fro* analytical sheets at proposal. (See note on page 5-5.)
M Data incorrectly transcribed at proposal, (See note on page 5-5.)
-------
TABLE 5-6 (Continued)
SEMICONDUCTOR PROCESS WftSfES
PLANT 04294
cn
I
ts>
Ul
Stream Description
now
Duration (hrs)
Sample ID No.
field Hastesf
3650
Concentration Mass Load
rag/I rag/day
TOXIC IHORGJWIGS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
126 Sliver
121 Thallium
128 21nc
Total Toxic Inorganics
HOH-COMVBITIOHAL POLLUTfiHTS
Aluminum
Barium
Boron
calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurian
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
affluent
6213
24
3652
Concentration Mass Load
mg/l mg/day
-------
uť
I
KJ
en
WIBIS 5-6 (Continued)
SEMICONDUCTOR PROCESS VXSTBS
PLWff 04294
Streax Description Acid Vastest Bffluent Wafer Finishing Wastes Stripper Quench RInset Photoresist Developerf
Mow (I/hr) 6273
Duration (hrs) 24 Batch Batch
Sample ID No. , 3650 3652 3641 3644 3646
Concentration Mass Load Concentration Hass Load Concentration Mass Load Concentration Mass Load Concentration Mass Load
ťg/l Kg/day mg/l Ng/day mg/l leg/day Rig/i leg/day Ťg/l kg/day
CONVEKIIOHAL POLLUTAHTS
Oil & Orease 4.0 0.6 7
Total Suspended Solids 14 2.11 135
Biochemical Oxygen Demand 30 4.52 6.0
PH
t Conventional pollutants were not analyzed
t Data not transcribed CroŤ analytical sheets at proposal. (See note on page 5-5.)
-------
TABLE 5-7
SEMICONDUCTOR PROCESS WASTES
PLANT 04296
Stream Description
Plow (l/hr)
Duration (hrs)
Sample ID Ho.
TOXIC QRGANICS
Supply Hater
1798
24
HI 6-0-0
Concentration Mass Load
ng/l Bg/day
Effluent
1798
24
H16-1-1
Concentration Mass Load
mg/t rag/day
Scrubber Wastes
10
24
H16-2-1
Concentration Mass Load
mg/l kg/day
I
NJ
4 Benzene
8 1,2,4-TrIchlorobenzene
23 Chloroform
24 2-Chlorophenol
25 1.2-Dlchlorobenzene
26 1,3-Dichlorobenzene
27 1,4-Dichlorobenzene
31 2,4~Dichlorophenol
37 1.2-Diphenylhydrazlne
38 Ethylbenzene
44 Kethylene chloride
48 Dichlorobromcdethane
55 Naphthalene
57 2-Hltrophenol
65 Phenol
66 Bis<2-ethylhexylť
phthalate
67 Butyl benzyl phthalate
68 Dl-N-butyl phthalate
70 Olethyl phthalate
85 fetrachloroethylene
86 Toluene
87 Trlchloroethylene
121 cyanide*
Total Toxic Organics
0.290
0,013
4,5
0.09
4,5
0.235
0.235
0.01
0.190
0.035
3.5
0.05B
0.194
0.0039
0.194
0.01
0.01
0.0004
0.008
0.0015
0.151
0.002
0.011
0.290
O.OOOS
0.013
0.002
13,335
0.0001
0.575
0.70
0.045
0.750
0.013
0.280
0.080
0.91
1.868
0.00017
0.00001
0.00018
0.000003
0.00007
0.000019
0.0002
0.00045
TOXIC INORGANICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
<0.0005
<0.005
<0.005
<0.001
<0.025
0.04
0.24
<0.001
<0.025
<0.005
0.0017
0.01
0.0007
0.0068
<0.005
0.0003
1.15
0,005
0.0035
<0.001
<0.025
<0.005
0.00003
0.00029
0.00001
0.05
0.0002
0.00015
0.088
6.25
<0.005
0.006
1.14
0.38
0.42
<0.001
0.34
<0.005
0.00002
0.0015
0.000001
0.00027
0.00009
0.0001
0.00008
* lot Included In Total Toxic Organics summation.
B - Present in sample blank
-------
TABUS 5-7 (Continued)
SEMICOHDUCtOR PROCESS VAST8S
P1MJT 04296
U1
I
f>J
00
sires* Description
Plow {l/hr}
Duration (hrs)
sample ID Ho.
Supply Water
1798
24
H16-0-0
Concentration Mass Load
ng/1 mg/day
Effluenl
1198
24
H16-1-1
Concentration Mass Load
mg/t Kg/day
Scrubber
10
24
H16-2-1
Concentration Mass Load
g/l kg/day
TOXIC INORGANICS (Continued)
126 Sliver
127 thallium
128 Zinc
Total Toxic Inorganics
HOH-CONVSNMOHAl, POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
sodium
Tellurium
Tin
Titanium
Vanadium
Xttrlum
Phenols
Total organic carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total suspended
Solids
Biochemical OKygen
Demand
PH
-------
TABU 5-8
SBHICOWDUCTOR PROCESS WkSTSS
puunr 06143
ui
i
VD
Streať Description
Plow (t /hr)
Duration (hrs)
Sample ID Ho.
TOXIC ORGNIICS
4 Benzen*
5 Benzldlne
6 Carbon Tetrachlorlde
7 ctilorobenzene
8 ,2,4-friclilorobensrene
10 ,2-Dlchloroethane
11 ,1,1-Trlchloroethane
14 ,1.2-Trlchloroethane
23 chloroform
24 -chlorophenol
25 ,2 Dlchlorobenzene
26 ,3-Dlchlorobenzene
27 ,4-Dlchlorobenzent
29 .1-Dlchloroelhylene
30 ,2-Transdlchloroethylene
34 2.4-Dlmethylphenol
37 1,2-Dlphenylhydrazlne
38 Ethylbenzene
39 Fluoranthene
44 Hethylene chloride
45 MethjS chloride
46 Methyl Bromide
48 Dlchlorobromomethane
49 Trlchlorofluormethane
51 chlorodlbromomethane
55 Naphthalene
56 Nitrobenzene
57 2-Hitrophenol
58 4-Hltrophenol
65 Phenol
66 Bls(2 ethylhexyljphthalote
67 Butyl benzyl phthalate
68 Dl-H'butyl phthalate
69 Dl-H-octyl phthalale
70 Diethy I phthalate
78 Anthracene
81 phenathrene
84 Pyrene
85 tetracIiloroBthylene
86 Toluene
87 Trlchloroethylene
121 Cyanide*
Total Toxic organlcs
Scrubber Wastes
2,509
24
3482
Concentration Mass Load
g/l kg/day
<0.oi
<0.0l
0.029
<0.01
<0.01
0.015
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
0.011
0.76
t.a
-------
5-B (continued)
senicowoocroR PROCESS WASTES
PLAHT 06 U3
Stream Description
Flow (I /hr)
Duration Chrs)
Sample ID No.
TOXIC INORGANICS
Scrubber Wastes
2,509
24
3482
Concentration Bass Load
iog/1 kg/day
Dilute Rinses
43,214
24
3483
Concentration Mass Load
Ťg/l kg/day
Effluent
42,496
24
3484
Concentration Mass Load
Ťg/l fcg/day
Scrubber Hastes
2,509
24
3485
concentration Hass Load
mg/l kg/day
Ui
I
u>
o
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Hercury
124 Nickel
125 Selenium
126 Silver
127 Thallium
-128 Zinc
fotal Toxic Inorganics
MON-COHVKHTIOHAL POLLUTANTS
Aluminum
Barium
.. Boron
Calcium
Cobalt
Cold
Iron
Magnesium
Nanganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
fin
T Han lure
Vanadium
yttrium
Phenols
Total organic carbon
Fluoride
0.002
0.004
<0.001
-------
TABLE 5-8 (Continued)
SEMICONDUCTOR PROCESS HASTBS
PLANT 06143
Stream Description
Flow (1 /hr)
Duration (hrs)
Sample ID No.
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
pH
Scrubber Hastes
2,509
24
3482
Concentration Mass Load
mg/l kg/day
1.57
0.3
22
Dilute Rinses
43,214
24
3483
Concentration Mass Load
mg/t kg/day
affluent
42.496
24
3484
Concentration Mass Load
mg/l kg/day
0.09
0.018
1.32
3.41
0.3
3.54
0.31
5.46
3.3
16.8
Scrubber Hastes
2.509
24
3485
Concentration Hass Load
mg/l kg/day
5.57
3.37
17.1
12.67
1.4
12.6
0.76
0.08
0,76
tn
-------
TABUS 5-8 (Continued)
SEHICOHOOCTOR PROCESS WASTES
PUHT 06143
tn
I
w
M
Strea* Description
Flow (I /hrj
Duration (hrs)
SaŤj>le ID No.
Dilute Rinses
43,214
24
3486
concentration Mass Load
*g/l kg/day
tOXIC ORGftHICS
4 Benzene
5 Benzldlne <0,01 I
6 Carbon Tetrachlorlde
7 chlorobenzene
8 1,2,4-Trlchlorobenzene
10 l,2-DlchloroethanŤ
11 1,1,1-Trlchloroethane 0.014 0.145
14 1.1,2-Trlchloroethane <0ť0i
23 chloroform <0.01
24 2-Chlorophenol
25 1,2-Dlchlorobenzen* <0.01
26 1,3-Dlchlorobenzene
27 1,4-Dlchlorobenzene
29 1,1-Dlchloroethylene
30 1,2-Transdlchloroethylene
34 2,4-Dinethyiphenol
37 1,2-Dlphenylhydrazlne
38-Bthylbenzene <0.0i
39 Pluoranthene
44 Hethylene chloride <0.0i
45 Methyl Chloride
46 Methyl Bromide
48 Dlchlorobromofliethane
49 Trlchlorofluormethane
51 Chlorodibroraomethane
55 Naphthalene
56 Nitrobenzene
57 2-Hltrophenol
58 4-Nltrophenol
65 Phenol 0.31 0.32
66 Bls(2-ethylhexyl)phthalate <0.01
67 Butyl benzyl phthalate <0.01
68 Dl-N-butyl phthalate <0.01
70 Dlethyl phthalate
78 Anthracene
81 Phenathrene
84 Pyrene
.-85 TetrachloroŤthylene <0.01
86 toluene <0.01
87 Trlchloroethylene
121 cyanide* 0.01 0.01
total Toxic Organlcs 0.324 It 0.336
Effluent
47.701
24
3487
Concentration Kass Load
Ťg/t kg/day
<0.01
<0.01
<0.01
<0.01
3.2 3.66
0.270
<0.0l
0.044
0.02
<0.01
<0.01B
<0.01
0.011
0.61
<0.0l
<0.01
<0.01
<0.01B
0.01
4.155 II
0.309
0.05
0.023
0.01
0.70
0.01
4.757
* Not Included In Total Toxic Organlcs summation.
B = Present In sample blank
Data not transcribed from analytical sheets at proposal, {see note on page 5-5.)
I Data Incorrectly transcribed at proposal. (See note on page 5-5.)
Scrubber Wastes
2,509
24
3488
Concentration Kass Load
ťg/l kg/day
<0.01 I
0.025
0.011
0.033
<0.01
0.018B
<0.01
0.018
<0.01
0.013
<0.01
<0.01
0.015° W
<0.01B
0.016
<0.01
0.13
0.97
<0.01
<0.01
<0.0l
<0.01
0.074
0.0128
0.08B
0.01
1.415 t*
Dilute Rinses
43,214
24
3489
Concentration Mass Load
g/i
<0.01
0.002
0.0007
0.002
0.001
0.001
0.0008
<0.01
0.0010
o.ooa
0.058
0.0045
<0.01
0.0048
0.001
0.0852
0.019
<0.01
<0.01
0.020
<0.01
<0.01
0.011
<0.01
<0.01
<0.01
0.01
0.03
0.01
0.01
0.031
-------
TABLE 5-8 (Continued)
SEMICONDUCTOR PROCESS WASTES
PLANT 06143
Stream Description
Flow (I /hr)
Duration (hrs)
Sample ID No.
Dilute Rinses
43.214
24
3486
Concentration Mass Load
rag/I leg/day
Effluent
47.701
24
3487
Concentration Mass Load
mg/t kg/day
Scrubber Wastes
2,509
24
3488
Concentration Mass Load
rag/I kg/day
Dilute Rinses
43,214
24
3489
Concentration Mass Load
mg/l kg/day
Ui
I
oo
oo
TOXIC INORGANICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
126 Sliver
127 Thallium
128 Zinc
Total Toxic Inorganics
HON-CONVBNTIONAL POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
0.002
<0.001
<0.001
<0.002
0.310
0.046
<0.039
<0.001
0.135
0.003
<0.001
0.001
1.84
2.337
0.041
0.001
0.058
0.546
<0.048
<0.001
1.23
0.147
0.024
<0.034
<0.003
<0.01
<1.5
0.005
<0.024
<0.002
<0.001
<0.003
0.036
5.3
1.1
0.0021
0.322
0.048
0.14
0.003
0.001
1.91
2.426
0.043
0 001
0.06
1.28
0.025
0.005
0.037
5.5
1.14
<0.001
0.003
<0.001
<0.002
<0.001
0.904
<0.039
<0.001
<0.005
0.007
0.001
<0.001
0.05
0.965
0.572
0.007
0.908
7.0
<0.049
0.002
<0.001
2.11
0.029
<0.034
<0.003
<0.01
344
<0.002
<0.025
0.012
<0.001
<0.003
0.040
49.8
125
0.003
1.03
0.008
0.001
0.057
1.099
0.655
0.008
1.04
0.0023
0.045
0.014
0.046
57.0
143.1
0.002
0.001
<0.001
<0.002
<0.001
0.005
<0.039
<0.001
<0.005
0.001
<0.001
<0.001
<0.001
0.009
0.148
0.013
0.009
18.2
<0.049
<0.001
<0.001
5.14
0.031
<0.034
<0.003
<0.01
13.5
<0.002
<0.024
<0.002
<0.001
<0.003
4.4
18.81
27.5
0.0001
0.00006
0.0003
0.00006
0.0005
0.0089
0.0008
0.0005
0.002
0.005
0.26
1.13
1.66
0.001
0.002
<0.001
<0.002
<0.001
<0.002
<0.039
<0.001
<0.005
<0.001
0.001
<0.001
<0.001
0.004
0.001
0.0021
0.001
0.0041
0.024
<0.001
0.022
0.032
<0.048
<0.001
<0.001
<0.024
<0.001
<0.034
<0.003
<0.01
0.0052
<0.024
0.002
0.001
0.003
0.019
5.3
1.5
0.02!
0.02:
0.19
5.5
1.56
-------
TABLS 5-8 (Continued)
SBHICOWXJCTOR PROCESS WASTES
PUWt 06143
streaa Description
Plow (I /hr)
Duration (hrs)
Sample ID HO.
CONVBHTIOHM. POLLUf MťTS
Oil & Crease
Total Suspended solids
Biochemical Oxygen Demand
PH
Dilute Rinses
43,214
24
3486
Concentration Hass Load
Ťg/l kg/day
Effluent
47,701
24
3487
Concentration Mass Load
mg/l kg/day
1.6
22
T.66
22.8
11.67
3.0
1.2
13.4
3.43
1.47
Scrubber Wastes
2,509
24
3488
Concentration
0.24
1.6
30
Mass Load
kg/day
0.01
0.096
1.81
Dilute Rinses
43,214
24
3489
Concentration Kass Load
mg/l kg/day
0.8
0.83
-------
WBLB 5-8 (Continued)
Ul
I
u>
Ul
Strew Description
Flow (t /hr>
Duration (hrs)
Saaple ID No.
TOXIC 08GMUCS
SBMICONDUCT08 PROCESS WASTES
PLANT 06143
Effluent
46,002
24
3490
Concentration Mass Load
ag/t kg/day
4 Benzene
5 Benzidlne
6 Carbon Tetrachloride
7 chlorobenzene
8 1,2,4-f r ichlorobenzene
10 1,2-Dlchloroethane
11 1,1,1-Trichloroethan*
14 1,1,2-Trichloroethane
23 Chloroform
24 2-Chlorophenol
25 1,2-Dichlorobenzene
1,3-Dichlorobenzem
1,4-Bichlorobenzene
1.1-Dlchloroettiylene
1,2-Transdichloroethylene
26
27
29
30
34
37
2.4-Dlaethylphenol
,2-Diphenylhydrazine
38 Bthylbenzene
39 Fluoranthene
44 Methylene chloride
45 Methyl Chloride
46 Methyl Bronide
48 Dichlorobromomethane
49 Trichlorofluormethane
51 chlorodibromomethane
55 Naphthalene
56 Nitrobenzene
57 2-Nitrophenol
58 4-Nltrophenol
65 Phenol
66 Bls(2-ethylhexyl)phthalate
67 Butyl benzyl phthalate
68 Di-H-butyl phthalate
70 Dtethyl phthalate
78 anthracene
81 Phenathrene
85 Tetrachloroethylene
86 Toluene
87 Trichloroethylene
121 cyanide*
Total Toxic Organics
<0.01B
<0.01
<0.01
7.7
<0.01
<0.01
0.091
<0.01
0.015
0,071
<0.01B
<0.01B
<0.01
<0.01
0.043
0.31
<0.01
<0.01
<0.01
<0.01B
0,01
8.23
8.5
0.10
0.017
0.08
0.047
0.34
0.01
9.084
* Not Included in Total Toxic Organics summation.
B - Present In sample blank
-------
TABU5 5-8 (Continued)
SUmCONWCTOR PROCBSS WASTES
PLAKT 06143
I
uť
a\
Stream Description
Plow U /hr)
Duration (hrs)
Simple ID Mo.
TOXIC IN08QWUCS
1M Antimony
115 Arsenic
117 Beryl HIM
118 Cadmlura
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 selenium
126 Silver
127 Thallium
128 Zinc
Total Toxic inorganics
f. POLLUTRNTS
Effluent
46,002
24
3490
Concentration Mass Load
tug/1 kg/day
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic carbon
Fluoride
<0.001
0.01
-------
TftBLB 5-8 (Continued)
SEMICONDUCTOR PROCESS HASTES
PUWT 06143
Stream Description Effluent
Flow (I /hr) 46.002
Dura Lion (hrs) 24
sample ID Ho. 3490
.concentration Mass Load
mg/l kg/day
CONVBHTIOHAL POLLOTRNfS
Oil & Grease 2.44 2.69
Total Suspended Solids 3.8 4.20
Biochemical Oxygen Demand 24.4 26.9
Ul
I
U!
-------
TABLE 5-9
SEMICONDUCTOR PROCESS VKSTSS
PLAHf 30167
Ul
I
U)
00
StreoM Description
Plow (I /hr)
Duration (hrs)
Sample 10 Ho.
TOXIC OSOHHCS
Supply water
205020
24
IH9-0
Concentration Kane Load
g/l kg/day
Acid wastes
24529
24
M19-2
concentration KBBS Load
mg/t, kg/day
4 Benzene
7 Chlorobenzene
8 1,2,4-frlchlorobenzene
U 1,1,1-frlchloroethane
13 1.1-Dlchloroethane
23 Chloroform
24 2-Chlorophenol
25 1,2-Dichlorobenzene
44 Hethylene chloride
51 Chlorodlbromonethane
55 Naphthalene
57 2-Kitrophenol
58 4-Hitrophenol
65 Phenol
66 Bis(2-ethylhexyl)phthalate 0.01 0.05
67 Butyl benzyl phthalate
68 Di-H-butyl phthalate
69 Di-H-octyl phthalate
70 Dlethyl phthalate
85 Tetrachloroethylene 0.03 0.15
86 Toluene
87 Trlchloroethylene 0.009 0.04
121 Cyanide* 0.002 0.01
Total Toxic organics 0.030 ť 0.24
TOXIC INORGANICS
114 Antimony <0.001
115 Rrsenlc <0.01
117 Beryllium <0.01
118 cadmium <0.001
119 chromium <0.005
120 copper " <0.0l
122 Lead <0.001
123 Mercury <0.001
124 Hickel <0.025
125 Selenium <0.005
*Hot included in Total Toxic Organlcs summation,
HData not transcribed from analytical sheets at proposal.
B = present in sample blank
0.01
0.147
0.018
0.007
0.35
0.165
Treated Acid Wastes
24529
24
H19-3
Concentration Rass Load
mg/l kg/day
Influent to Treatment
205043
24
W9-4
Concentration Kass Load
mg/l kg/day
0.006
0.087
0.011
0.004
0.206
0.097
0.013
0.006
0.005
0.140
0.034
0,085
0,110
0.272
<0,002
<0.01
<0.0l
0.004
22.8
2.2
5.35
<0.001
0.69
<0.005
0.002
13.42
1.295
3.15
0.406
<0.001
<0.01
<0.01
<0.001
0.055
0.145
0.005
cO.OOl
0.065
<0.005
0.008
0.004
0.003
0.082
0.020
0.050
0.065
0.160
0.032
0.085
0.003
0.038
0.011
0.5368
0.01
0.290
0.01
0,0365
<0.001
0.874 t
0.001
<0.01
<0.01
<0.001
0.025
0.035
0.008
cO.OOl
0.035
<0.005
0,054
2.638
0.049
1.427
0,049
0,180
4,301
0.005
0.123
0.172
0.039
O.H2
(Sec note on pace 5-5.)
-------
TABLE 5-9 (continued)
SEMICONDUCTOR PROCESS WASTES
PLANT 30167
Stream Description
Flow (I /hr)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (Continued)
supply Hater
205020
24
H19-O
Concentration Hass Load
rag/I kg/day
Acid wastes
24529
24
HI 9 2
Concentration Mass Load
ing/l kg/day
Treated Reid Hastes
24529
24
M19 3
Concentration Mass Load
rag/t kg/day
Influent to Treatment
205043
24
H19 4
Concentration Mass Load
mg/t kg/day
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON CONVENTIONAL POLLUTANTS
<0.0l
0.001
<0,01
0.001
0.005
0.541
0.025
0.005
<0.01
31.07
0.014
0.0029
18.29
<0.01
0.012
<0.01
0.282
0.007
0.166
<0.01
0.012
<0.01
0,116
0.059
0.571
cn
I
U)
Aluminum
Barium
Boron
Calcium
cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
tttrlum
Phenols
Total organic Carbon
Fluoride
NA
NA
NA
NA
NA
NA
MA
NA
NA
NA
NA
NA
HA
NA
NA
NA
NA
NA
<0.002
56
4.2
275.5
20.67
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
0.004
414
760
0.002
243.7
447.4
NA
MA
HA
NA
NA
NA
NA
HA
NA
NA
NA
HA
NA
HA
NA
NA
NA
NA
0.004
255
37
0.0024
150.1
7.418
NA
NA
HA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
<0.002
47
231.3
CONVENTIONAL POLLUTANTS
Oil & Grease 2.0
Total Suspended Solids 1.2
Biochemical oxygen Demand 3
pH 7.8
NA=Non-toxic wetals not analyzed
9.84
5.9
14.8
O
2.8
5.6
<3
1.2
1.648
3.297
3.1
71
550
11.9
1.825
41,80
323.8
1.0
203
11
9.4
4.921
999.0
54,13
-------
Stream Description
Flow
-------
TABLE 5-9 (Continued)
SEMICONDUCTOR PROCESS WASTES
PLANT 30167
Strea/i Description
Flow It /hr>
Duration (hrs)
Sample ID Mo,
TOXIC INORGANICS (Continued)
Effluent
205043
24
M19-5
Concentration Hass Load
mg/l kg/day
Wafer Finishing Wastes
3950
24
H19-1
Concentration Hass Load
rag/I kg/day
Equipment Cleaning
1577
24
H19-6
Concentration Hass Load
mg/l kg/day
Display Panel
Production Effluent
5520
24
M19-7
Concentration Hass Load
mg/l kg/day
126 Silver
127 Thallium
128 Zinc
<0.01
0.003
<0.01
0.01
<0.010 f
<0.001
<0,0l S
<0.010
0.002 t
0.173 ft
0.00008
0.007
<0.010 8
<0.001 i
0.013 *
Total Toxic Inorganics
NON-CONVENIIONRL POLLUTANTS
0.093
0.46
0.020 I
0.002
19.009 t
0,719
0.197 t
.n
I
aluminum
Barium
Boron
Calcium
Cobalt
Sold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
fin
Titanium
Vanadium
yttrium
Phenols
Total Organic Carbon
Fluoride
NA
NA
NA
NA
NA
NA
NA
NA
NA
HA
NA
NA
NA
NA
NA
m
NA
NA
0.008
97 *
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
<0.002
132 *
12.5
NA
HA
NA
NA
NA
NA
NA
HA
NA
NA
NA
NA
HA
NA
NA
NA
NA
NA
0.006
107 tt
60
0.0002
40.8
2.27
NA
HA
Nft
NA
NA
NA
NA
NA
MA
NA
NA
NA
NA
HA
NA
NA
NA
NA
<0.002
68 *
CONVENTIONAL POLLUTANTS
Oil & Grease 17.4
Total Suspended Solids 350
Biochemical oxygen Demand 70
pH 8.8
85.62
1722.2
344.4
6.0 8
325 8
56 t
8.2 t
0.57
30.8
5.31
2.8 8
0.6 8
<3 S
1.0 *
0.106
0.023
2.1 8
3 8
8.1 t
* Data not transcribed from analytical sheets at proposal.
NA = Not analyzed.
(See note on page 5-5.)
-------
TABLE 5-9 (Continued)
SIHICONBUCTOR PROCESS VASTSS
PLAWT 30167
Strea* Description
Flow (I /hr)
Duration (hrs)
Sample ID No.
TOXIC ORGAHICS
4 Benzene
7 Chlorobenzene
8 1,2,4-Trlchlorobenzene
11 1,1,1-Trlehloroethane
13 1.1-Dlchloroethane
23 chloroform
24 2-Chlorophenol
44 Methylene chloride
51 chlorodlbromoaethane
55 Naphthalene
57 2-Mltrophenol
58 4-NKrophenol
65 Phenol
ui 66 Bls(2-ethylhexyl)phthalate
I 67 Butyl benzyl phthalate
*" 68 Dl-N-butyl phthalate
w 69 Dl-N-octyl phthalate
70 Dlethyl phthalate
85 Tetrachloroethylene
86 Toluene
87 Trlchloroethylene
121 cyanide*
Total Toxic Organics
TOXIC INORGANICS
114 flntlmony
115 ftrsenlc
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Hercury
124 Nickel
125 Selenium
Effluent
189250
24
3314
Concentration Mass Load
Ťg/l kg/day
<0,0l
0.016
0.013
0.006
<0.04
0.029 **
<0.003
0.014
0.002
0.015
0.115
0.158
0.040
<0.003
0.108
<0.003
0.073
0.059
<0.01
0.027
0.159
0.064
0.009
0.068
0.522
0.718
0.182
0.491
Influent to TreatMtnt
189250
24
3315
Concentration Mass Load
mg/l kg/day
0.001
0.012
0.005
<0.04
0.012 **
<0.003
0.010
0.002
0.018
0.027
0.045
<0.010
0.003
0.054
<0.003
0.005
0.055
0.023
0.083
Acid Wastes
20187
24
3316
Concentration Mass toad
mg/t kg/day
Treated Acid Wastes
20187
24
3317
Concentration Mass Load
mg/l kg/day
0.016
0.001
0.047
0.002
<0.04
0.063 It
0.045
0.009
0.082
0.123
0.204
0.014
0.245
<0.003
0.004
0.002
0.030
19.00
1.742
3.675
0.002
1.956
<0.003
0.008
0.023
0.001
0.032
0,002
0.001
0.015
9.205
0.844
1.780
0.001
0.948
0.006
0.042
0.001
<0.04
0.042 til
<0.003
<0.003
<0.001
<0.00l
0.128
0.050
0.18
0.001
0.121
<0.003
0.003
0.020
0.001
0.024
0.062
0.024
0.00<ť
0.001
0.059
Hot Included In Total toxic Organics suiwwtlon.
MData incorrectly transcribed at proposal. (See note on page 5-5.)
-------
TABLE 5-9 (Continued)
SEMICONDUCTOR PROCESS HASTES
PLANT 30161
Ul
I
Stream Description
Plow (I /hr)
Duration (hrs)
Sample ID Mo.
TOXIC INORGANICS (Continued)
126 sliver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic carbon
Fluoride
Effluent
189250
24
3314
Concentration Mass Load
mg/t kg/day
0.025
0.120
0.358
0.955
1.352
0.089
0.353
618.62
0.050
7.571
55.39
0.217
0.065
488.93
0.121
<0.030
0.385
0.064
<0.004
70.0
1.5
0.114
0.545
1.626
4.334
0.550
1.75
0.291
317.94
6.813
Influent to Treatment
189250
24
3315
Concentration Mass Load
mg/t kg/day
0.015
0.05
0.162
0.386
6.141
0.404
1.603
0.227
34.387
0.986
0.295
0.986
0.053
0.306
313.02
0.042
5.404
46.810
0.059
0.052
504.23
0.106
<0.03
0.339
0.056
<0.004
90.0
1.9
0.068
0.227
0.736
1.753
Acid Wastes
20187
24
3316
concentration Mass Load
mg/t kg/day
0.011
0.40
0.197
26.659
1400.0
0.005
0.019
0.095
12.916
Treated Acid Wastes
20187
24
3317
Concentration Mass Load
mg/t kg/day
0.020
0.19
0.033
13.039
4.478
0.241
1.390
0.191
24.545
0.268
0.236
4.440
0.018
12.145
4.155
0.041
1.025
3.325
22.37
0.198
2.151
0.009
5.884
0.202
0.50
10.840
0.10
<0.001
<0.001
0.571
1090,0
<0.001
0.071
0.783
0.133
0.158
231.73
0.481
1.540
0.254
408.78
8.63
0.270
<0.03
0.134
0.069
< 0.004
400.0
306.0
0.131
0.065
0.033
193.80
148.25
<0.00l
0.024
<0.001
0.005
<0.004
250.0
9.5
<0.01
0.092
0.016
6.317
0.277
0.034
0.064
0.017
0.012
0.002
121.12
4.603
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended solids
Biochemical Oxygen Demand
PH
1.3
12.27
91.8
5.91
5573.03
477.41
1.2
145.0
116.0
5.450
658.59
526.87
1.3
2.0
704.0
0.630
0.970
341.10
0.3
66.2
452.0
32.073
219.0
-------
TML8 5-9 (Continued)
SQUCOHDUCTOR PROCESS WST8S
PtWIT 30167
Streaji Description Wafer Finishing Wastes
Plow (I /hr) 2059
Duration (hrs) 24
Sample ID Ho. 3318
Concentration Mass 'Load
Mg/l kg/day
TOXIC OROANICS
4 Beiuene
7 Chlorobenzene
8 1,2,4-Trichloroberaene
11 1,1,1-Triehloroethane
13 1,l-Dichloroethane
23 Chloroforn
24 2-Chlorophenol
44 Methylene chloride 0.009 <0.001
51 Chlorodlbrofflomethane
55 Naphthalene
51 2-Hitrophenol
58 4-Hltrophenol
jj, 65 Phenol
I 66 Bls(2-ethylhexyl)phthalate
* 67 Butyl benzyl phthalate
* 68 Di-M-butyl phthalate
69 Dl-H-octyl phthalate
70 Dlethyl phthalate
85 Tetrachloroethylene 0,002 <0.001
86 Toluene
87 frichloroethylene 0.018 0.001
121 Cyanide* <0.004
total Toxic Organlcs 0.018 M 0.001
TOXIC INORGANICS
114 Rntimony <0.003
115 Rrsenlc <0.003
117 Beryllium <0.001
118 Cadmium <0.001
119 Chromium <0.020
120 Copper 0.092 0.005
122 Lead 0.015 <0.001
123 Mercury 0.002 <0.001
124 Mlckel <0.028
125 Selenium <0.003
*Not Included In Total Toxic Organlcs summation.
HtData Incorrectly transcribed at proposal. (See note on page 5-5.)
-------
TABLE 5-9 (Continued)
SEMICONDUCTOR PROCESS WASTES
PLANT 30167
I
*ť
U1
Stream Description
Plow (I /hr)
Duration (hrs)
sample ID Ho.
TOXIC INORGANICS (Continued)
126 Silver
127 Thallium
128 Zinc
Total toxic Inorganics
NOH-CONVEHTIONAL POLLUTANTS
Aluminum
Barium
Boron
calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
yttrium
Phenols
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
pH
Wafer Finishing Wastes
2059
24
3318
Concentration Mass Load
mg/i kg/day
<0.002
<0.020
0.047
<0.001
<0.001
1.194
8.156
<0.00!
<0.001
6.457
<0.001
<0.025
148.224
0.037
<0.03
<0.001
<0.00i
0.11
70.0
<0.10
14.1
344.0
69.0
0.002
0.008
0.059
0.002
0.001
3.46
0.697
17.0
3.41
-------
tuus-ie
simccHDUCKMt rtoctss warn
nun 35035
Birean Description
Mow tl /hr)
Duration (brŤ)
Sample ID HO.
TOXIC OROJVNICS
scrubber VuUŤ
50
24
3718
Concentration Htss Load
g/1 kf/day
Dilute Itnti*
6Ť6S
2Ť
3119
Concentration KM* toad
9/t kg/day
affluent
417i
24
3720
Concentration Has* Load
4/1 kg/day
Dliutt Rtn*es
9169
24
3121
Concentration Bass Load
9/1 kg/day
U1
I
*ť
0.090
<0.01
<0.01
<0.0l"
0.097
3.10
9.1*
<0.01*
-------
TABLE 5-10 (Continued)
SEMICONDUCTOR PROCESS WASTES
PLANT 3S035
Ul
I
Stream Description
Flow (I /hr)
Duration (hrs)
Sample ID Ho.
TOXIC INORGANICS (Continued)
126 Silver
127 Thai lima
128 Zinc
total Toxic Inorganics
NQH-COHVBNflOHM, POLLOTMI1S
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
lln
Titanium
Vanadium
Yttrium
Lithium
Phenols
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
pH
Scrubber Wastes
50
24
3718
Concentration Mass Load
og/l kg/day
<0.001
<0.001
<0.001
0.019
0.253
<0.001
0.372
5.80
<0.05
<0.002
<0.001
8.33
0.033
<0.035
<0.003
<0.003
27.20
0.01
<0.025
0.004
0.013
<0.003
0.006
135.0
177.0
119
5.0
24.8
471
Dilute Rinses
6865
24
3719
Concentration Mass Load
ťg/t leg/day
<0.001
<0.001
-------
IABU5 5-10 {Continued)
SEMICONDUCTOR PROCESS mSI2S
PLANT 35035
Stream Ascription
Plow (I /hr)
Duration (hrs)
Sample ID No.
TOXIC ORGANICS
Effluent
8740
24
3722
Concentration Mass Load
ttg/l kg/day
Dilute Rinses
7904
24
3723
Concentration Mass Load
mg/l kg/day
Effluent
7681
24
3724
concentration Mass Load
mg/l kg/day
I
*>.
CO
4 Benzene
8 1,2,4-frichlorobenzene 5,200 1.091
11 1,1,1-frichloroethane
13 1,1-Dichloroethane
23 Chloroform
24 2-chlorophenol
25 1,2-Dlehlorobenzene
26 It3-Dlchlorobenzene
27 1,4-Dlchlorobenzene
38 Ethylbenzene
44 Kethylene chloride
55 Naphthalene
57 2-Nitrophenol
58 4-Nitrophenol
65 Phenol
66 Bis(2-ethylhexyl}phthalate
68 Di-N-butyl phthalate
70 Dlethyl phthalate
85 fetrachloroethylene
86 toluene
81 Trlchloroethylene
121 Cyanide*
Total Toxic Organics 5.593 ft 1.113
0.0096
0.0009
0.0018
0.0002
5.300
0.977
0.0055
0.0015
0.0021
0.0075
0.086
0.018
0.263
0.013
0.0022
0.0002
0.013
0.0081
<0.005
0.0012
0.0003
0.0006
0.0016
0.018
0.0038
0.055
0.003
0.0005
0.00004
0.003
0.0018
0.0054
0.0002
0.013
0.046
0.0011
0.003
0.0009
0,0003
0.0072
0.0049
<0.005
0.001
0.00004
0.0025
0.0087
0.0002
0.00057
0.0002
0.00006
0.0014
0.00093
0.0092
0.0083
0.0032
0.018
0.0005
0.011
0.130
0.024
0.44
0.0057
0.0012
0.0002
0.0085
0.0066
<0.005
0.0011
0.0015
0.0006
0.003
0.00009
0.002
0.024
0.004
0.081
0.001
0.0002
0.00004
0.0016
0.0012
0.059 *Ť
0.0112
5.923 ť*
1.092
TOXIC INORGANICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
0.10
I
<0.001
0.004
0.005
0.049
<0.04
<0.001
0.022
0.044
0.02
0.0008
0.001
0.01
0.005
0.009
0.002
I
<0.001
<0.002
<0.001
<0.002
<0.04
<0.001
<0.005
0.003
0.0004
0.0006
I
I
<0.001
0.002
<0.001
0.059
<0.04
<0.001
0.015
I
0.00031
0.11
0.0028
B = present sample blank
I = interferences present
MData Incorrectly transcribed at proposal. (See note on page 5-5.)
*Not included in Total Toxic organics summation.
-------
TABLE 5-10 (Continued)
SEMICONDUCTOR PROCESS WASTES
PLANT 35035
U1
I
*>
VO
Stream Description
Flow (I /hr)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (Continued)
126 silver
127 Thallium
128 Zinc
Total Toxic inorganics
NOM-COMVlMNOťat POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Kagneslua
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Xttrluw
Lithium
Phenols
Total Organic carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended solids
Blochenlcal Oxygen Demand
PH
Effluent
8740
24
3722
Concentration Mass Load
mg/l kg/day
Dilute Rinses
7904
24
3723
Concentration Mass Load
tag/I kg/day
Effluent
7681
24
3724
Concentration Mass Load
mg/l kg/day
0.001
<0.001
0.184
0.409
0.263
0.004
0.372
21.4
<0.05
I
0.483
3.79
0.002
0.046
0.004
0.003
1130
I
<0.025
0.006
0.013
<0.003
0.018
0.53
78
8.6
2.4
0.0002
0.039
0.085
0.055
0.0008
0.078
0.101
0.0004
0.0096
0.0008
0.0006
0.0013
0.0027
0.0038
O.U1
16.36
1.80
0.503
0
0.002
<0.001
<0.001
0.007
<0.01
<0.001
0.015
<0,OQ5
<0.05
<0.002
<0.001
0.089
<0.001
<0.035
<0.003
<0.003
<1.50
<0.006
<0.025
<0.002
0.003
<0.003
0.001
<0.001
0.5
0.25
1.0
0.0004
0.0014
0.002
cO.OOl
0.067
0.145
0.003
0.00063
0.0002
0.10
0.05
0.16
0.002
0.43
16.10
<0.05
I
0.068
2.76
0.002
<0.035
0.007
<0.003
1400
<0.006
<0.025
0.005
0.007
<0.003
0.04
0.32
36
11.2
0.00037
0.012
0.027
0.03
0.0004
0.079
0.013
0.0004
0.0013
0.0009
0.0013
0.0074
0.059
6.64
2.065
0.20
interferences present
-------
TMUS 5-11
SEMICONDUCTOR PROCESS VHStSS
PtAWT 36133
cn
I
U1
o
Stream Description
Flow (I /hr)
Duration (hrs)
Sample ID Ho.
TOXIC ORGANICS
4 Benzene
7 chlorobenzene
8 1,2.4-Trlchlorobenzene
23 Chloroform
25 1,2-Dichlorobenzene
26 1.3-DlchlorobenzenŤ
27 1,4-Dlchlorobenzem
29 1,1-Diehloroethylene
32 1,2-Dlchloropropsne
3*7 1.2-Dlphenylhydrazine
38 Bthylbenzene
44 Hethylene chloride
45 Methyl chloride
48 Dlchlorobrontomethane
51 Chlorodibrcmoniethane
62 H-nltrosodlphenylamine
65 Phenol
66 Bis{2-ethylhexyl)phthaiate
85 Tetrachloroethylene
86 Toluene
81 Irlchloroethylene
89 Aldrln
90 Dieldrin
101 Heptachlor epoxlde
102 Alpha BHC
103 Beta BHC
104 Gamma BHC
105 Delta BHC
121 Cyanide
Xylene
Total Toxic organlcs
TOXIC IKOSGM4ICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 chromium
Treated Acid Wastes
337
24
3779
Concentration Mass Load
g/l kg/day
<0.01
<0.01
-------
TABLt 5-11
SEMICONDUCTOR PROCESS WASTES
PLANT 36133
Ul
I
U1
Stream Description
Plow (I /hr>
Duration (hrs)
Sample ID Ho.
TOXIC INORGANICS (Continued)
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-COMVENTIONftL POLLUTANTS
Aluminum
Barium
Boron
calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
Treated Acid Wastes
337
24
3779
Concentration Mass Load
wg/i
Effluent
272,353
24
3780
Concentration Mass Load
mg/l fcg/day
0.16
0.045
0.011
0.22
<0.005
0.015
<0.03
0.087
0.54
0.411
<3.0
425.23
<0.02
0.029
0.042
0.04
<0.05
<0.02
<0.02
<0.001
1537
20.1
0.0013
0.00036
0.00009
0.0018
0.00012
0
0.0007
0.0044
0.003
0.0002
0.0003
0.0003
0.115
0.085
cO.OOl
0.531
<0.005
0.005
<0.03
0.04
0.844
Acid Wastes
189
24
3781
Concentration Mass Load
mg/4 kg/day
Treated Reid
wastes
481
24
3782
Concentration Mass Load
mq/t kg/day
0.75
0.56
3.47
0.26
5.49
3.746
0.1SO
<0.001
0.20
0.007
0.03
<0.03
0.429
412,28
0.010
0.0004
0.0005
0.00002
o.ooooa
0.001
1.109
0.09
0.04
<0.001
0.20
<0.005
0,020
<0.03
0.432
1.855
0.001
0,0005
0.002
0,002
0.005
0.023
12.4
0.16
0.231
0.023
0.246
153.4
0.01
0.051
0.092
12.6
0.011
0.035
<0.04
<0.05
199.5
<0.02
0.006
0.105
0.105
0.023
0.021
10
5.42
1.51
0.15
1.62
-
0.065
0.33
0.60
0.072
0.229
0.039
0.686
0.686
0.150
0.137
65.4
35.4
320.06
697
825.18
0.14
<0.02
<0.04
<0.05
<0.02
11.32
0.103
2777
50,000
0.86
1.87
-
0.0004
0.03
0.00028
7.465
134.4
0.411
<3.0
332.94
0.02
<0.02
0.044
<0.04
<0.05
<0.02
<0.02
0.004
957
24
0.005
0.0002
0.0005
o.oooor>
11.05
0.28
CONVENTIONAL POLLUTAHTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
PH
2.0
176
3700
0.016
1.42
29.9
2.4
2
18
15.7
1307
117.7
5.1
5760
241
0.014
15.483
0.653
9.8
1930
2275
0.113
22.28
26.26
-------
Streait Description
Flow (I /hr}
Duration (hrs)
Sample ID No.
TOXIC ORGWHCS
TABLE 5-11 (Continued)
SEMICONDUCTOR PROCESS VASfES
PLAKT 36133
Effluent*
280,020
24
3783
Concentration Mass Load
g/t kg/day
Acid Vastes*
189
24
3185
Concentration Hasa toad
Rtg/t kg/day
Treated Jicid Wastes*
281
24
3786
Concentration Mass Load
mg/l kg/day
Effluent*
285.800
24
3787
Concentration Hass Load
wg/l kg/day
(Jl
I
Ul
NJ
4 Benzene
7 Chlorobenzene
23 Chloroform
25 1,2-Dichlorobenzene
26 1,3-Dichlorobenzene
27 l,4-0ichlorobenzene
32 1,2-Dlehloropropane
37 1,2-Diphenylhydrazlne
38 Bthylbenzene
44 Methylene chloride
45 Methyl chloride
48 Dlchlorobroroomethane
51 chlorodlbrononothane
62 N-nitrosodiphenylaraine
65 Phenol
66 Bis(2~ethylhexyl)phthalate
85 Tetrachloroethylene
86 Toluene
87 Trlchloroethylene
89 Aldrln
90 Dieldrin
101 Heptachlor epoxlde
102 Rlpha BHC
103 Beta BHC
104 Gamma BHC
105 Delta BHC
121 cyanide*
Total Toxic organics
TOXIC INORGANICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadniun
119 Chromium
<0.005
<0.005
0.002
0.001
0.006
0.058
0.013
0,007
0.04
0.39
<0.005
<0.005
0.055
<0.003
<0.003
26.31
0.0001
0.059
0.477
<0.005
0.002
<0.003
<0.003
0.09
0.0032
0.00003
0.0005
<0.005
<0.005
0.002
0.001
0.007
0.054
0.014
0.007
0.05
0.037
*Hot included In Total organics summation.
tOrganlcs not analyzed.
-------
SEMICONDUCTOR PROCESS WASTES
PLANT 36133
U1
I
cn
Stream Description
Plow (I /hr)
Duration (tirs)
Sample ID Ho.
TOXIC INORGANICS (Continued)
120 copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
126 Silver
127 Thai 1 lira
128 Zinc
Total Toxic Inorganics
HOW-CONVENTIOHAL POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
Effluent
280.020
24
3783
Concentration Mass Load
mg/l kg/day
0,12
0.083
0.012
0.523
<0.005
0.005
<0.03
0.03
0.84
0.215
0.022
0.289
154.8
0.011
0.056
0.081
13.22
0.011
0.037
<0.04
<0.05
225.62
<0.02
0.002
0.008
0.105
0.022
0.014
11.4
12
0.81
0.56
0.08
3.51
0.03
0.20
5.64
1.44
0.15
1.94
0.07
0.38
0.54
Acid Wastes
189
24
3785
Concentration Mass Load
mg/1 kg/day
Treated Acid Wastes
281
24
3786
Concentration Mass Load
mg/t kg/day
1.07
<0.02
0.005
0.09
0.007
0.01
<0.003
0.179
27.726
173.83
41.0
215.29
<0.02
<0.02
0.002
0.00001
0.00002
0.00002
0.00002
0.0004
0.062
0.39
0.09
0.08
<0.02
0.01
0.18
<0.005
0.02
<0.03
0.136
0.518
0.793
<3.00
578.83
<0.02
<0.02
0.25
0.013
0.054
0.71
0.15
0.094
76.61
80.65
O.U
<0.04
<0.05
<0.02
10.83
0.105
967
27.500
0.0002
0.024
0.0002
2.16
61.38
0.032
<0.04
<0.05
<0.02
<0.02
0.015
655
28.8
affluent
285,800
24
3787
Concentration Mass Load
mg/l kg/day
0.0004
0.001
0.0001
0.0008
0.0029
0.004
0.0002
0.134
0.10
0.011
0.596
0.009
0.005
<0.03
0.038
0.957
0.92
0.69
0.07
4.09
0.06
0.03
0.26
6.561
0.0001
4.42
0.19
0.231
0.023
0.226
174.10
0.009
0.04
0.089
13.55
0,011
0.043
<0,04
<0.05
257.12
<0.02
0.0
0.007
0.109
0.028
0.006
1.8
9.0
1.58
0.16
1.53
0.06
0.27
0.61
0.015
0.295
0.0
0.048
0.75
0.19
0.041
12.35
61.73
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
4.2
1.0
17
28.23
6.72
114.25
3.6
2540
81
0.008
5.67
0.19
5.0
136
1415
o.o;)3
0.911
9.9S
3.39
2.7
12
23.7.5
lfl.52
B2.3
-------
TABLE 5-12
SEHICOHDUCTOR PROCESS VAST8S
PLWT 36135
(Jl
I
U1
Stream Description
Flow (I Xhr)
miration (hrs)
Sample ID Kb.
TOXIC ORGANICS
4 Benzene
7 cblorobenzene
11 1,1,1-Trlchloroethane
13 1,1-Dlchloroethane
23 Chloroform
24 2-Ghlorophenol
25 1,2-Dlchlorobenzene
27 1,4-Dichlorobenzene
38 Bthylbenzene
44 Hethylene chloride
57 2-Hltrophenol
65 Phenol
66 Bls(2-ethylhexyl)phthalate
67 Butyl benzyl phthalate
68 Dl-N-butyl phthalate
69 Di-H-octyl phthalate
70 Dlethyl phthalate
85 fetrachloroethylene
86 Toluene
87 Trlchloroethylene
121 cyanide*
Toxic Organics
TOXIC IHORGMJICS
114 Antimony
115 Rrsenlc
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Hercury
124 Nickel
12S Selenium
Dilute Rinses*
38035
24
3763
Concentration Mass Load
ng/1 leg/day
Effluent*
76,070
24
3764
Concentration Hass Load
mg/l kg/day
<0.005
<0.001
<0.005
0.001
0,008
0.024
0.232
0.09
<0,001
1.659
<0.005
0.0009
0.007
0.022
0.212
0.082
1.514
0.013
cO.QOl
<0.005
0.001
0.007
0.048
0.051
0.098
<0.001
0,531
<0,005
Dilute Rinses
38276
24
3765
Concentration Mass Load
ťg/l kg/day
<0.01B
0.04
0.002
0.013
0.088
0.093
0.179
0.969
0.015
0,070
<0.01
0,025B
<0.01
<0.005
0.11
<0.001
<0.005
0.001
0.008
0.028
0.347
0.096
0,01
0.815
<0.005
0.014
0,64
0.023
0.101
Effluent
76,551
24
3766
Concentration Mass Load
mg/l kg/day
<0.01
0.01
0.037
<0.01
<0.01
0.011
0.009
0.048
0.001
0.007
0.026
0,319
0.088
0,009
0.749
<0.001
<0,005
0.001
0.007
0.05
0.05
0.102
0.01
0.52
0.01
0.018
0.068
0.020
0.017
0.088
0,002
0.013
0.092
0.092
0.187
0.018
0.955
0.018
B Ť present in sample blank
* Not Included In Total Toxic Organics summation.
t Organics not analyzed.
-------
TftBLE 5-12 (Continued)
SEMICONDUCTOR PROCESS WftSTES
PLJ4NT 36135
Ul
I
Ul
Ul
stream Description
Plow {I /hr)
Duration (hrs)
Sample ID Ho,
TOXIC IHQRGMIICS (Continued)
126 Sliver
127 Thai Hum
128 Zinc
Total Toxic Inorganics
NOH-COMVENTIONM. POLLUTANTS
Aluminum
Barium
Boron
calcium
cobalt
cold
Iron
Magnesium
Nanganese
Molybdenum
Palladium
Platinum
sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
phenols
Total organic Carbon
Fluoride
CONVENTIONRL POLLUTRNTS
Oil & Grease
Total Suspended Solids
Biochemical oxygen Demand
pH
Dilute Rinses
38035
24
3763
Concentration Mass Load
mg/l kg/day
<0.006
<0.05
0.04
2.054
14.74
1.0
1.0
1.6
Effluent
76,070
24
3764
Concentration Mass Load
mg/l kg/day
0.037
1.875
0.913
0,913
1.461
Dilute Rinses
38276
24
3765
Concentration Mass Load
mg/l kg/day
Effluent
76,551
24
3766
Concentration Mass Load
rag/I kg/day
0.006
0.09
0.022
0.854
0.011
0.164
0.040
1.559
0,006
<0.05
0.083
1.394
0.006
0.076
1.281
0.009
0.09
0.025
0.874
0.017
0.165
0.046
1.606
0.193
0.017
0.148
16.4
0.011
0.874
5.804
0.01
0.022
0.176
0.016
0.135
0.010
0.798
0.009
0.020
0.269
0.019
0.114
187.700
0,008
0.086
13.95
0.006
0.024
0.491
0.035
0.208
0.015
0.157
0.011
0.044
0.225
0.018
0.106
16.29
0.018
1.296
5.847
0.013
0.026
0.207
0.017
0.097
0.017
1.191
0.012
0.024
0.299
* 0.018
0.285
176.40
0.009
0.076
13.57
0.006
0.028
0.549
0.033
0.524
o.on
0.140
0.011
O.OM
53,68
14,68
2.8
1.0
7.2
5.11
1.826
13.14
19.8
18.19
66.18
0.033
0.006
0.048
0.012
0.0023
27
9.08
0.030
0.005
0.044
0.011
0.002
24.65
8.289
0.016
0.008
0.124
0.03
0.0128
11
14.5
0.029
0.015
0.226
0.055
0.023
20.08
26.47
0.018
0.008
0.052
0.016
0.0057
9.0
21.5
0.017
0.007
0.048
0.015
0.005
8.268
19.75
0.011
0.009
0.121
0.03
; 0.00019
4.0
11.7
0.0X0
o.on
0,222
0 . Orť5
0.003
7.341)
21. Ml
5.8
<1.0
3,6
10.66
6.614
-------
TMJL8 5-13
SEMICONDUCTOR PROCESS WASTES
PLAM? 36136
stream Description influent to Treataent Effluent . Influent to Treatwent * Effluent*
Flow (I /hr> 55760 59141 53412 57963
Duration (hrs) 24 24 24 24
Sanple-ID No. 3595 3596 3598 3599
Concentration Has* Load concentration Haas Load Concentration Hass Load concentration Mass Load
g/l kg/day ng/l kg/day itg/I kg/day Ťg/i kg/day
fOXie OBQWIICS
4 Benzene <0.01 <0.01
7 Chlorobenzene <
-------
fSBLE 5-13 (Continued)
SEMICONDUCTOR PROCESS WASTES
PLANT 36136
Ul
I
Ul
Stream Description
Flow (I /hr)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (Continued)
126 Silver
127 Thallium
128 Zinc
total Toxic Inorganics
NOM-CONVENTIONAL POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Iron
Hagneslurn
Manganese
Holybdenun
Palladium
Platinum
Sodium
Tin
Titanium
Vanadium
Xttrium
Phenols
Total Organic Carbon
Fluor ide
Influent to Treatment
55760
24
3595
Concentration Mass Load
mg/1 kg/day
<0.005
<0.025
0.130
2.815
3.177
0.027
0.132
5.196
0.013
3,725
2.132
0.144
0.024
140.516
0.200
0.027
0.072
<0.001
0.179
202
99.38
0.174
3.76
Effluent
59141
24
3596
Concentration Mass Load
mg/l ' kg/day
<0.003
0.065
0.027
1.081
4.25
0.036
0.177
0.017
4,985
0.193
0.032
0.227
0.012
0.102
243.708
0.014
o.osa
6.794
0.021
0.018
0.092
0.038
1.54
0.322
0.017
0.145
0.02
0.125
0.03
0.026
influent to Treatment
53412
24
3598
Concentration Mass Load
mg/l kg/day
<0.005
<0.025
0.289
4.27
5.749
0.016
0.431
3.544
0.016
3.760
1.5
0.209
0.026
0.310
5.47
Effluent
57963
24
3599
Concentration Mass Load
mg/l kg/day
0.006
0.035
0.025
0.905
7.37
0.02
0.552
0,02
4.82
0.267
0.033
0.292
0.01
0.198
171.508
0.007
0.106
4.93
0.025
0.018
0.008
0.049
0.035
1.26
0.406
0.0139
0.275
0.0097
0.117
0.035
0.025
0.268
0.036
0.096
0.24
270.3
133
38.906
0.012
0.007
0.064
0.002
0.112
191
10.50
0.017
0.01
0.091
0.003
0.16
271.1
14.9
21.732
0.168
0.033
0.109
<0.001
0.038
193
148.75
0.215
0.042
0.14
0.049
247.4
190.68
98.066
0.028
0.006
0.054
0.033
0.115
130
12
0.039
0.008
0.075
0.046
0.16
180.8
16.7
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
pH
20.1
72
330
26.90
96.35
441.62
5.2
56
300
7.38
79.5
425.8
7.3
80
290
9.36
102.55
371.75
6.9
44
250
9.6
61.21
347.8
-------
TABLE 5-13 (Continued)
SEMICONDUCTOR PROCESS WRSTBS
PLANT 36136
Strea* Description Influent to Treatment* Effluent'*'
Flo* ((. /hr) 61225 61211
Duration (hrs> 24 24
Sample ID Ho. 85110 85111
Concentration Mass Load Concentration Mass Load
ťg/l kg/day mg/l kg/day
TOXIC ORGRNICS
4 Benzene
7 chlorobenzene
11 1,1,1-Trlchloroethane
13 1 , 1-Dichloroethane
23 chloroforn
24 2-Chlorophenol
25 1,2-Dlchlorobenzene
27 1 , 4-Dlchlorobenzene
29 1,1-Olchloroethylene
31 2,4-Dlchlorophenol
38 Ethyl benzene
44 Methylene chloride
51 Chlorodlbrotaomethane
tn 55 naphthalene
I 57 2-Hltrophenol
g 65 Phenol
66 Bls(2-ethylhexyl)phthalate
67 Butyl benzyl phthalate
68 Dl-N-butyl phthalate
69 Dl-H-octyl phthalate
70 Diethyl phthalate
71 Dimethyl phthalate
85 Tetrachloroethylene
86 Toluene
121 Cyanide* 0.005 ŤJ.005
Total Toxic Organlcs
TOXIC
114 Antimony <0.005 <0.005
115 Brsenlc <0.003 <0.003
117 Beryllium <0.001 <0.001
118 Cadnlum 0.007 0.010 0.002 0.003
119 Chromium 0.038 0.056 0.019 0.028
120 Copper 0.691 1.02 0.033 0.048
122 Lead 0.175 0.257 0.06 0.088
123 Mercury <0.001 0.003 0.004
124 Hlcfcel 1.039 1.527 0.576 0.846
125 Selenium <0.003 <0.003
* Mot Included In total toxic Organlcs summation.
t Organlcs were not analyzed
-------
THBLE 5-13 (Continued)
SEMICONDUCTOR PROCESS VASTBS
PLANT 36136
stream Description
Plow (i /hr)
Duration (hrs)
Simple ID Ho.
TOXIC IHOBGANICS (continued)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
influent to Treatment
61225
24
85110
Concentration Mass Load
eg/i kg/day
<0.005
<0.025
0.183
2.133
0.269
3.14
Effluent
61211
24
85111
Concentration Mass Load
kg/day
0.006
0.065
0.031
0.795
o.ooae
0.095
0.046
1.17
in
I
m
Alumlnua
Barium
Boron
Calcium
Cobalt
Gold
Iron
Bagneslua
Manganese
Molybdenum
Palladium
Platinum
Sodlui
Tellurlun
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
2.838
0.047
0.233
7.6
0.008
2.065
2.507
0.126
0.026
<0.025
<0.03
125.816
<0.02
0.076
0.020
0.071
<0.001
0.114
76
83.75
4.17
0.069
0.34
0.012
3.03
0.185
0.038
0.112
0.029
0.10
0.168
111.67
123.1
0.253
0.013
0.144
253.408
0.012
0.146
6.462
0.023
0.015
<0.025
<0.03
52.456
<0.02
0.02
0.007
0.06
0.028
0.181
136
17.50
0.37
0.019
0.212
0.018
0.214
0.034
0.022
0.029
0.01
0.088
0.041
0.266
199.8
25.7
CONVENTIONAL POLLUTANTS
Oil & Orease
Total Suspended Solids
Biochemical oxygen Demand
pH
7.1
72
140
10.4
105.8
205.7
7.8
60
330
11.46
88.14
484.8
-------
stream Description
Flow {1 /hr)
Duration (hrs)
Sample ID Ho.
TOXIC OROANICS
Stripper guench Rinse*
TABLE 5-14
SHXICOHDUCTOR PROC8SS WASTBS
PLANT 41061
Acid Wastes
Stripper Quench
3265 ft 3262 3260
Concentration Mass Load concentration Hass Load concentration Mass Load
mg/t Kg/day ťg/l kg/day ag/l kg/day
Acid Wastes*
3264
Concentration Hass Load
mg/l kg/day
ui
I
a\
o
4 Benzene <0.01
11 l.l.l-Trichloroethane <0.01
23 Chloroform 0.044
25 1,2-Dichlorobenzene 0.800
26 1,3-Dlchlorobenzene
27 It4-Dlchlorobenzene <0,01
31 2,4-Dichlorophenol
37 l,2-DiphenylhydrazinŤ
38 Bthylbenzene 5.40 *
44 Hethylene chloride <0.01 f
48 Dlchlorobromofliethane <0.01 f
51 Chlorodlbrononethane <0.01
58 4-Nitrophenol
65 Phenol 0.520 ť
66 Bls(2-ethylhexyl)phthalate <0.01
67 Butyl benzyl phthalate <0,01 f
68 Dl-H-butyl phthalate <0.01 t
69 Dl-H-octyl phthalate <0.01
70 Dlethyl phthalate <0.01 f
78 Anthracene <0.01
81 Phenanthrene <0.01
85 Tetrachloroethylene 0.096
66 Toluene
87 Trlchloroethylene <0.01
121 cyanide* <0.006
total Toxic Organlcs 6.86
<0.01
0.034
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.005
0.034
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0,01
<0.01
<0.01
<0.01
<0.005
0.066
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01 *
<0.01 f
<0.01
<0.005
0.066
TOXIC IHORGANIGS
114 Antimony
115 Arsenic
118 Cadmium
119 chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
<0.002
<0.003
<0.003
<0.020
<0.003
<0.01 t
<0.001
<0.025
<0.002
<0.003
<0.003
<0.02
<0.003
<0.01
<0.001
<0.025
<0.002
<0.003
<0,003
<0.02
<0.003
<0.01
<0.001
<0.025
<0.002
<0.003
<0.003
<0.02
<0.003
<0.01
<0.001
<0.025
t Pesticides not analyzed.
* Not included In Total Toxic organics summation.
Data not transcribed from analytical sheet at proposal, (see note on page 5-5.)
ttlt Data Incorrectly transcribed at proposal, (see note on page 5-5.)
-------
TABLE 5-14 (Continued)
SEMICONDUCTOR PROCESS WASTES
PLANT 41061
Stream Description Stripper Quench Rinse* Reid Wastes* Stripper Quench Rinse* Acid Wastes*
Plow (t /hr)
Duration (hrs)
Sample ID Ho. 3265 M 3262 3260 3264
Concentration Mass Load concentration Mass Load Concentration Mass Load Concentration Mass Load
rag/l kg/day rog/t kg/day mg/l kg/day mg/l kg/day
TOXIC INORGANICS (continued)
126 Silver <0.002 <0.002 <0.002 <0.002
127 Thai Hun <0.020 <0.02 <0.02 <0.02
128 Zinc <0.002 t 0.005 0.002 0.002
Total Toxic Inorganics 0.094 0.091 0.091
NON-CONVENTIONAL POLLUTANTS
Aluminum
Barium
Boron
Calclun
Cobalt
Gold
Y1 iron
0^ Magnesium
i-i Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Tltanluo
Vanadium
Yttrium
Phenols 0.02 <0.01 0.026 <0.01
Total Organic Carbon 4 <2.0 I <2 <2
Fluoride 0.07 134 0.14 0.20 t
CONVENTIONAL POLLUTANTS
Oil & Grease 27 27 14 31
Total suspended Solids 9 t 7 5 7 i
Biochemical Oxygen Demand Ť * * *
pH 5.1 i 3.6 3.4 3.7
t Non-toxic metals not analyzed.
* Blank out oC control range. Results not reliable.
t Data not transcribed from analytical sheet at proposal. (See note on page 5-5.)
if Data Incorrectly transcribed at proposal. (See note on page 5-5.)
-------
TAStS 5-14 (Continued)
BOKCOMDUcrot ptocsss WASTES
PLWff 41061
StretM Description
Plow (t /hr)
Duration (hrs)
ID Ho.
SMlconductor BfCluentt
476962 II
24
32S1
Concentration Bass Load
3/t kg/day
tOXIC OSOWICS
1 Acenapthene
4 Benzene
6 Carbon Tetraehloride
a
a
.2.4~TrIchlorobenzerie
,1,1-lrIchloroethane
23 chlorofora
25 .2-Dlchlorobenzene
26 .3-Oichlorobanzene
27 .4-Dlchlorobenzene
29 ,l-DlchloroethylenŤ
30 ,2-Trans-Dlchloroethyleiw
38 Bthylbenzene
39 Fluoranthene
44 Hethylme chloride
45 Methyl Chloride
ui 48 Dlchlorobrononethana
I 51 chlorodlbrowMietbane
°* 55 Naphthalene
M 57 2-Nitrophenol
65 Phenol
66 BU<2-ethylhexyl)phthalate
67 Butyl benzyl phthalate
68 Dl-H-butyl phthalate
69 Di-K-octyl phthalate
70 Dlethyl phthalate
85 Tetrachloroethylene
86 Toluene
87 Trlchloroethylene
121 Cyanide*
Total Toxic Organlcs
TOXIC IHOROMIICS
114 Anttmny
115 Arsenic
118 Cadmium
119 Chronlui
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selentua
<0.01
0.020
<0.01
<0.01
<0.01
-------
TABLE 5-14 (continued)
SEMICONDUCTOR PROCESS WASTES
PLANT 41061
ui
CTl
U)
Stream Description
flow (I /hr)
Duration (hrs)
Sample ID Ho.
TOXIC IMORGftHICS (Continued)
126 Silver
127 Thallium
128 Zinc
fotal Toxic Inorganics
NON-CONVENTIONAL POLLUTWITS
Aluminum
Barium
Boron
Calcium
Cobalt
Cold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic carbon
Fluoride
COHVENTIONftL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
pH
Semiconductor Effluentt
476962 ft
24
3251
Concentration Hass Load
rag/1 kg/day
Scrubber Vastest
2271 Ťt
24
3250
Concentration Hass Load
mg/l kg/day
<0.002
<0.02
0.006
0.034
0.069
0.389
<0.002
<0.02
0.021
0.07
0.01
3
215
0.114
34.34
2461
11.45
<0.3
34
39
15
Effluentf
953923 if
24
3252
Concentration Hass Load
mg/l leg/day
0.0011
0.004
1.836
2.106
0.81
t Non-toxic metals not analyzed.
t Data not transcribed from analytical sheet at proposal. (See note on page 5-5.)
St Data incorrectly transcribed at proposal. (See note on page 5-5.)
0.008
<0.02
0.088
2.0
<0.013
11
34
1.24
52
Semiconductor Effluentf
476962 **
24
3255
Concentration Hass Load
mg/l kg/day
0.183
2.015
45.79
251.8
778.4
28.39
1190
<0.002
<0,02
0.004
0.005
<0.01
<2 ť
102 tt
20
5 ť
<2 Ť
1.8 Ť
0.046
0.057
H68
228.9
57.24
20.6
-------
TABLE 5-14 (Continued)
SEMICONDUCTOR KX3CSSS VASTSS
PUIOT 41061
StreiM Description
Plow (I /hr)
Duration (hrs)
Sample ID Ko.
Scrubber Vastest
2271 Ť
24
3254
Concentration Mass Load
3/1 kg/day
Slfluentt
953923 M
24
3256
Concentration Mass Load
mg/l kg/day
Semiconductor BCfluentt
476962 M
24
3259
Concentration Mass Load
ťg/l kg/day
Scrubber Vastest
2271 It
24
3258
Concentration Mass Load
wg/t kg/day
TOXIC OROKNICS
01
I
en
4 Benzene
7 chlorobenzene
11 1.1,1-Trichloroethane
13 1,1-Dichloroethane
23 Chloroform
24 2-chlorophenol
25 1,2-Dichlorobenzena
27 1,4-Dlchlorobenzeno
29 1,1-Dichloroethylene
31 2,4-Dichlorophenol
38 Bthylbenzene
44 Hethylene chloride
51 ChlorodlbroBonethane
55 Naphthalene
57 2-Nitrophenol
65 Phenol
66 8ls(2-ethylhexyl)phthalate
67 Butyl benzyl phthalate
68 Bi-W-butyl phthalate
69 Dl-H-octyl phthalate
70 Diethyl phthalate
85 Tetrachloroethylene
86 toluene
121 cyanide*
Total toxic Organlcs
tOXIC IHORGRHICS
114 Antimony
115 Arsenic
118 Cadmium
119 Ctiroralua
120 Copper
122 Lead
123 Kercury
124 Nickel
125 selenium
0.006
0.028
<0.003
<0.003
<0.02
0.026
<0.01
0.003
<0.025
0.0003
0.002
0.0014
0.0002
<0.005
<0.02
0.017
<0.003
0.116
1.333
0.04
0.001
0.355
0.389
2.656
30.52
0.916
0.023
8.13
<0.005
<0.02
<0.003
<0.003
0.02
<0.003
<0.0l
<0.025
<0.003
0.229
<0.005
0.02
<0.003
<0.003
<0.02
0.024
<0.01
<0.001
<0.025
0.001
0.0013
* Not Included In total Organics sunmatlon.
It Data Incorrectly transcribed at proposal.
f Organics were not analyzed
(See note on page 5-5.)
-------
TABLE 5-14 (Continued)
SEMICONDUCTOR PROCESS WASTES
PUNT 41061
cn
1
-------
TABLE 5-14 (Continued)
SEMICONDUCTOR PROCESS WASTES
fUHT 41061
Ul
I
Streaa Description
Flow (t /hr)
Duration (tin)
sample 10 Ho.
Crystal Effluent
24
3267
Concentration Kate Load
ŤJ/l kg/day
TOXIC 0B3WHCS
4 Benzene
6 Carbon tetrachlorlde
6 1.2,4-Trichlorobenzene
11 1,1,1-Trichloroelhane
13 1,1-Dtchloroethane
23 chloroform
24 2-Chlorophenol
25 1,2-Dlchlorobenzene
26 1,3-olchlorobenzene
27 l,4~DlchlorobenzŤne
29 1,1-Olchloroethylene
37 l,2~Dlphenylhydrazine
38 Ethylbenzene
39 Fluoranthene
44 Hethylene chloride
51 chlocodibromonethane
57 2-Nltrophenol
58 4-Hltrophenol
65 Phenol
66 Bis(2-ethylhexyOphthalate
67 Butyl benzyl phthalate
68 Dl-N-butyl phthalate
69 Di-N-octyl phthalate
70 Dlethyl phthalate
85 Tetrachloroethylene
86 Toluene
87 Trichloroethylene
113 Toxaphene
121 Cyanide**
Total Toxic organlcs
TOXIC IHOROKNICS
114 Rntireony
115 Arsenic
117 Berylliun
118 Cadmium
119 ChroRlun
, 120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
Effluent*
439110*
24
4i-33-rei
concentration Kara Load
g/l kg/day
-------
TABLE 5-14 (Continued)
SEMICONDUCTOR PROCESS WRSTES
PLANT 41061
Stream Description Gate Effluent* t Bffluentt t City Water* t
Flow (t /hr) Crystal effluent* 439110* 439110* 439110*
Duration (hrs) 24 24 24 24
Sample ID Bo. 3267 41-33-FE1 41-33-FB2 41-33-CWl
Concentration Mass Load Concentration Mass Load Concentration Mass Load Concentration Mass Load
>ťg/1 kg/day mg/l kg/day mg/t kg/day mg/l kg/day
TOXIC INORGANICS (continued)
126 Silver <0.002 <0.015 <0.015
127 Thallium <0.02 <0.002 <0.002
128 Zinc 0.002 0.093 0.98 0.755 7.96
Total Toxic Inorganics 0.005 2.01 21.18 1.075 11.33
SON~CONVESIf IONAL POLLOTBMTS
Aluminum
Barium
Boron
Calcium
Cobalt
Ul Gold
I Iron
^ Magnesium
Hanganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
fin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon 25 f 14.7 154.9 3.70 38.99
Fluoride 72
eoNvamoNftL POLLOTWJTS
Oil & Grease 12.5
Total Suspended Solids 11 * 39.0 411.0 <0.01
Biochemical Oxygen Demand * 51.0 537.5 41.0 432.1
pH 1.7 ť 9.6 8.2
tKon-toxic metals not analyzed.
t Hot used In data base because these metals are associated with metal finishing.
* estimated Flow Rate
I Data not transcribed from analytical sheets at proposal. (See note on page 5-5.)
-------
TABUS 5-H (Continued)
SBHICOM3UCT08 PROCESS WASTES
PUNT 41061
Stream Description BfEluentf Silicon Crystal Bffluentft
Flow (I /hr) 953923 II 21577
Duration (hrs) 24 24
Sample ID Mo. 3266 3249
Concentration Mass Load Concentration Mass Load
*g/l kg/day ng/l kg/day
toxic ORGIWICS
4 Benzene
11 1,1,1-Trlchloroethane
13 1,1-Dichloroethane
23 Chloroform 0.020 0.0104
25 1,2-Dlchlorobenzene
27 1,4-Dichlorobenzene
29 1,1-Dichloroethylene
38 Ethylbenzene
39 Fluoranthene <0.01
44 Methyiene chloride <0.01
51 chlorodlbronomethane <0.01
57 2-Nitrophenol 0.033 0.017
65 Phenol 0.035 0.018
Ln 66 Bis(2-ethylhexyl)phthalate <0.01
I 67 Butyl benzyl phthalate <0.0i
<^> 68 Dl-M-butyl phthalate <0.01
00 69 Di-N-octyl phthalate <0.01
70 Dlethyl phthalate <0.01
85 Tetrachloroethylene
86 Toluene <0.01
121 cyanide* 0.009 0.206 0.106 0.055
Total Toxic organlcs 0.088 0.046
TOXIC INORGANICS
114 Rntimony <0.002 <0.002
115 Arsenic 0.018 0.412 <0.003
117 Beryllium <0.004
118 Cadmium <0.003 <0.003
119 Chromium 0.098 2.244 <0.020
120 copper 0.558 12.77 0.003 0.002
122 Lead 0.048 1.099 <0.010
123 Mercury 0.001 0.023 <0.001
124 Nickel 0.03 0.687 <0.025
125 Selenium <0.003
tOrganlcs were not analyzed.
*Hot included in Total Organics figure.
ttPestlcldes were not analyzed.
* Data not transcribed from analytical sheet at proposal. (See note on page 5-5.)
ft* Data incorrectly transcribed at proposal. (See note on page 5-5.)
-------
TftBLB 5-14 (Continued)
SanCOHDUCTOR PROCESS WASTES
PLANT 41061
Ui
I
a\
stream Description
Plow (I /hr)
Duration (hrs)
Sample 10 Ho.
TOXIC INOROWJICS (continued)
126 silver
127 Thai HUB
128 zinc
Total Toxic Inorganics
KOH-CONVENTIOtffiL POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
vanadium
Xttrlura
Phenols
Total Organic carbon
Fluoride
OTHER POLLUTANTS
Oil S Grease
Total Suspended Solids
Biochemical Oxygen Demand
PH
Effluentf
953923 M
24
3266
Concentration Mass Load
ng/t kg/day
silicon Crystal Bffluentt Ť
21577
24
3249
Concentration Mass Load
mg/l kg/day
0.002
<0.02
0.012
0.767
0.046
0.275
17.56
<0.002
<0.020
0.003
0.002
22
67
10
56
t
9.7
503.7
1534
228.9
1282
eO.OM
2
0.65
1.4
2 '
1.7
1.036
0.337
0,725
1.036
t Non-toxic metals were not analyzed.
* Blank out of control range. Results not reliable.
t Data not transcribed from analytical sheet at proposal. (See note on page 5-5.)
it Data incorrectly transcribed at proposal. (See note en page 5-5.>
-------
TMtt 5-15
SEHICOHDUCTOR PROCESS WASTES
PLAHT 42044
Streaa Description
Mow (I /hr)
Duration (hrs)
Sanple ID Ho.
TOXIC OROANICS
Dilute
34505
24
3668
Concentration
ng/t
Mass Load
kg/day
Effluent
40504
24
3671
Concentration Hass Load
Ťg/t kg/day
Dilute Rinses
33174
24
3672
concentration Have Load
Mg/l kg/day
Effluent
36907
24
36T3
concentration Bass Load
ťg/l kg/day
ui
I
-J
O
4 Benzene
11 1,1,1-Trichtoroethane 0.003 0.0029
23 Chloroform 0.006 0.005 0,013 0.013 0.005 0.004 0.004 0,0035
24 2-Chlorophenol 0.003 0.0029
25 1,2-Dlchlorobenzene 0.009 0.007 0.047 0.046 0.001 0.0008 0.040 0,035
26 1,3-Dlchlorobenzene 0.005 0.004
27 1,4-Dlchlorobenzene <0.01 <0.01 <0.01
29 1,1-Dichloroethylene
38 Ethylbenzene
44 Methylene chloride 0.101 0.084 0.056 0.054 0.049 0.040 0.044 0.039
51 chlorodibrcacisethane
55 Naphthalene 0.006 0.005 . #i 0.106
57 2-Nltrophenol 0.002 0.0017 0,013 0.013 0.006 0.005
58 4-Hltrophenol
65 Phenol 0.011 0.009 0.195 0.190 0.180 0.159
66 Bis(2-ethylhexyl)phthala 0.002 0.0017 0.07 0.068 0.011 0.009 0.007 0.006
67 Butyl benzyl phthalate
68 Dl-N-butyl phthalate 0.004 0.003 0.05 0.049 0.003 0.002 0.005 0.004
69 Dl-H-octyl phthalate
70 Diethy1 phthalate
85 fetrachloroethylene 0.005 0.0049 0,015 0.013
86 toluene 0.002 0.0017 0,002 0.0019 0.002 0.0016 0.002 0.002
87 frlchloroethylene
121 Cyanide* 0.030 0.025 0.030 0.029 0.005 0.0041 0.008 0.0071
Total Toxic Organlcs 0.112 ť 0.093 0.444 tt 0.432 0.060 Ť 0.051 0.279 It 0.247
TOXIC INOROftHICS
114 Rntlraony <0.001 <0.005 I <0.001 0.001 0.009
115 Rrsenic 0.003 0.0025 0.046 0.045 0.002 0.0016 0.006 0.005
117 Beryllium <0.001 <0.001 <0.001 <0.00l
US Cadmium <0.002 0.003 0.003 <0.002 0.003 0.0027
119 Chromium <0.001 0.152 0.15 0.005 0.004 0.154 0.136
120 Copper <0.002 0.022 0.021 0.004 0.003 0.011 0.01
122 Lead <0.04 0.052 0.051 <0.04 <0.04
123 Mercury <0.001 <0.011 <0.001 <0.00i
124 Nickel <0.005 0,009 0.0087 <0.005 0.012 0.011
125 Selenium 0.003 0.0025 0.175 1 0.170 0.001 0.0008 0.032 0.028
* Hot Included in Total Toxic Organlcs summation.
M Data Incorrectly transcribed at proiwsal. (See note on page 5-5.)
I Interference.
-------
TABLB 5-15 (Continued)
SEMICONDUCTOR PROCESS HASTES
PLANT 42044
Ul
i
-4
Stream Description
Plow (I /hr)
Duration (hrs)
Sample ID Ho.
TOXIC ISORGRHICS (Continue*)
126 Silver
127 Thallium
128 Zinc
Total Toxic inorganics
HOH-COWBHTIOHAL POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Sold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
fin
titanium
Vanadium
Yttrium
Lithium
Phenols
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total suspended Solids
Biochemical oxygen Demand
PH
Dilute Rinses
34505
24
3668
Concentration Mass Load
g/l kg/day
Effluent
40504
24
3671
Concentration Mass Load
*g/t . kg/day
Dilute Rinses
33774
24
3672
concentration Mass Load
mq/l leg/day
<0.001
<0.001
0.157
0.218
0.163
0.066
0.003
0.264
<0.005
<0.05
0.002
0.138
<0.025
<0,001
<0.035
<0.003
<0.01
<1.5
0.008
<0.025
<0.002
<0.001
<0.003
-------
WBtS 5-15 (Continued)
SEMICONDUCTOR PHOCSSS WASTES
KAHT 42044
streaM Description Dilute Rinses LCD BCEluŤnt Effluent
Mow (I /hr) 30001 1319 ' 34533
Duration (hrs) 24 24 24
Saaple ID Ho. 3674 3669 3615
Concentration Haas Load Concentration Mass Load concentration Mass Load
mg/t kg/day *g/l kg/day *g/l kg/day
TOXIC 08GWUCS
1 Acenaphthene <0,01
4 Benzene <0.01
7 Chlorobenzene
11 1,1,1-trichloroethane <0.01 0.130 0.108
23 Chloroform 0,004 0.003 <0,01 0.010 0.008
24 2-Chlorophenol 0.012 0,010
25 1,2-Diehlorobenzene 0.002 0.001 0,033 I 0.027
26 1,3-Dlchlorobenzene <0.01 0.005 0.004
27 1,4-Dlchlorobenzene <0.01 <0.01 <0.01
44 Hethylene chloride 0.067 0.048 0.040 0.007 0.070 0.058
SS naphthalene 0.033 0.021
57 2-Hitrophenol 0.011 0.009
65 Phenol 0,001 0.0004 0.180 0.149
66 Bis(2-ethylhexyl)phthala 0.012 0.0086 0.010 0.0018 0.020 0.0166
67 Butyl benzyl phthalate
68 Di-M-butyl phthalate 0.006 0.004 <0.01 0.004 0.003
69 Dl-N-octyl phthalate
70 Dlethyl phthalate <0.01
85 Tetrachloroethylene 0.001 0.0008
86 toluene 0.002 0.0014 <0.01
87 Trlchloroethylene
121 Cyanide* <0,001 0.017 0.003 0.004 0.0033
total toxic organics 0.079 It 0.057 0.040 it 0.007 0.489 ť* 0.405
TOXIC INOHGftNICS
114 antimony 0.001 0.007 <0,001 <0.001
115 Arsenic <0.01 I 0.004 0.0007 0.12 0.10
117 Beryllium <0.001 <0.001 <0.001
118 cadmium <0.002 <0.002 0.003 0.0025
119 Chromium <0.001 0.023 0.005 0.205 0.170
120 copper <0.002 0.003 0.0005 0.012 0.01
122 Lead <0.04 <0.04 0.049 0.041
123 Mercury <0.001 <0.001 <0.001
124 Nickel <0.005 <0.005 0.009 0.0075
125 Selenium <0.001 <0.001 0.046 0.0038
*Not Included in Total toxic organics summation.
Data not transcribed from analytical sheet at proposal. (See note on page 5-5.)
tit Data incorrectly transcribed at proposal, (see note on page 5-5.)
-------
TABLE 5-15 (continued)
SEMICONDUCTOR PROCESS WASTES
PUU1T 42044
Stream Description
Flow (ť /hr)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (Continued)
126 Silver
127 Thallium
128 Zinc
Dilute Rinses
30001
24
3674
Concentration Hass toad
mg/l kg/day
<0,001
<0,001
<0,001
LCD Effluent
7319
24
3669
Concentration Hass Load
mg/l kg/day
0.001
<0.001
0.008
Effluent
34533
24
3675
Concentration Hass Load
mg/l kg/day
0.0002
0.0014
<0.001
<0.001
0.01
0.008
Total Toxic inorganics
NON-CONVENTIONAL POLLUTANTS
Aluminum
Barium
Boron
Calcium
cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
.Sodium
Tellurium
Tin
Titanium
Vanadium
Ittrium
Lithium
Phenols
Total Organic Carbon
Fluoride
0.001
0.053
0.002
0.172
<0.005
<0.05
0.023
<0,025
<0.001
<0.035
1.5
<0,025
<0.002
<0.001
<0.003
0.005
2.0
5.8
0.0007
0.044
0.0078
0.445
0.038
0.0014
0.12
0.017
0.038
0.006
0.499
0.124
<0.05
0.028
<0.025
0.002
<0.035
3.24
0.0067
0.001
0.088
0.0049
0.0004
0.895
0.048
0.753
35
0.058
0.352
9.98
0.005
0.042
1030
0.287
0.74
0.0398
0.62
0.048
0.29
0.004
0,035
0.0036
1.44
4.18
<0.025
<0.002
<0.001
<0.003
0.006
109.0
0.17
0.001
19.1
0.03
0.027
0.005
0.006
<0.003
0.002
46.0
64.5
0.022
0.004
0.005
0.0017
38.12
53.46
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
1.2
1.0
1.4
0.86
0.72
1.01
4.0
5.0
15.0
0.70
0.88
2.6
1.0
11.0
10.2
0.83
9.117
8.45
-------
TABLE 5-17
ELECTRONIC CRYSTALS
SUMMARY OF THE RAW WASTE DATAtt
Toxic prganics.
Parameter
8 1,2,4-Trichlorobenzene
11 1,1,1-trichloroethane
25 1,2-Dichlorobenzene
26 1,3-Dichlorobenzene
27 1.4-Dichlorobenzene
37 1,2-diphenylhydrazine
44 Methylene chloride
55 Naphthalene
68 Di-n-butyl phthalate
78 Anthracene
85 Tetrachloroethylene
87 Trichloroethylene
Plant 301
mg/1
ND**
0.170
ND
ND
ND
0.014
0.032
0.038
ND
0.015
ND
ND
Plant 380
mg/1
3.66
ND
132.6
1.96
52.6
ND
0.010
ND
0.046
ND
1.4
0.02
TOTAL TOXIC ORGANICS
0.269
ND - Not detected.
Toxic Metals
Antimony
Arsenic*
Beryllium
Cadmium
Chromium t
Copper t
Lead
Mercury
Nickel t
Selenium
Silver
Thallium
Zinc t
Conventional Pollutants
Min. Cone.
mq/1
<0.001
1.75
<0.001
<0.005
0.008
0.024
0.004
<0.001
<0.025
<0.002
<0.005
<0.001
0.040
Oil and Grease 8.0
Total Suspended Solids 7.0
Biochemical Oxygen Demand 4
Non-Convent j ona1 Pollutants
Fluoride 28
Max. Cone.
mq/1
0.91
3.03
0.001
0.040
6.95
7.92
0.308
0.001
2.74
0.129
0.025
0.050
4.23
94
2900
27
378
192.286
Mean Cone,
mq/1
0.122
2.39
<0.001
0.009
0.948
1.23
0.085
<0.001
0.454
0.016
0.005
0.008
0.654
31.5
616
19
129.7
* This table shows the range of toxic organics observed.
** Not detected.
tt This table shows the range of toxic organic
concentrations observed.
5-74
-------
TABLB 5-18
ELECTRONIC CRYSTALS PROCESS WASTES
PLANT 301
Stream Description
Flow (I /hr)
Duration (hrs)
Sample ID Ho,
TOXIC ORGASICS
1 Acenaphthene
4 Benzene
11 1,1,1-Trichloroethane
23 Chloroform
37 1,2-Dlphenylhydrazine
39 Fluoranthene
44 Hethylene chloride
48 Dlchlorobrofflomethane
54 Isophorone
55 Naphthalene
59 Dinltrophenol
60 Dinltro-o-cresol
62 ť-Nltrosodlphenylťlne
Ui 64 Pentachlorophenol
I 66 Bis(2-ethylhexyl)phthalate
^J 67 Butyl benzyl phthalate
68 Dl-N-butyl phthalate
69 Di-N-octyl phthalate
70 Dlethyl phthalate
72 1,2 benzanthracene
77 Acenaphthylene
78 Anthracene
80 Fluorene
84 Pyrene
100 Heptachlor
Total Toxic Organics
TOXIC INORGANICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 chromium
120 Copper
122 Lead
123 Hercury
124 Nickel
125 Selenium
Effluent
788
24
3469
Concentration Mass Load
mg/t kg/day
<0.01
0.170
<0.01
0.014
<0.01
0.032B *
<0.01
0.038
<0.01
<0.01
<0.01
<0.01
<0,01
<0.01
<0.01
0.015
-------
TWU8 5-18 {continued}
fei-BCTROHIC CRYSTALS PROCESS WASTES
PUIHT 301
Stresit Description
Flow (I /hr)
Duration (hrs)
Saťple ID Ho.
126 Silver
127 Thallium
128 Zinc
Effluent
788
24
3469
Concentration Mass Load
Ťg/l kg/day
0,005 t
<0.025
0.643
Wafer Finishing Wastes
8
24
3470
concentration Mass Load
mg/l
0.006 ť
<0.025
0.091 *
Total Toxic Inorganics
HOH-COSVEOTIOHM. POLLUTWffS
tn
I
-J
Aluminum
Bariiaa
Boron
Calcium
Cobalt
Sold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic carbon
Fluoride
0.482
0,016
0,650
30,764
0.004
1.092
6.879
0.021
0.021
258.244
0.019
0,010
0.054
<0.001
<0-002
2.6
44
0.115
0.194
12.822
35.054
0.125
29,230
12.029
0.375
0.023
91.694
0.068
0.002
0.083
0.014
<0.002
7600
3.3
COHVBNTIOHM. POLLUTANTS
Oil & Grease 94
Total Suspended Solids 36
Biochemical Oxygen Demand 28
pH 9.6
20%
320
25
7.8
t Data not transcribed from analytical sheets at proposal. (See note on page 5-6.)
-------
TABLE 5-19
ELECTRONIC CRYSTALS PROCESS WASTES
PLANT 304
Stream Description
Flow (I /hr)
Duration (hrs)
Sample ID No.
Influent to Treatment
2.183
24
3841
Concentration Mass Load
mg/l kg/day
Wafer Finishing Wastes*+
182
24
3842
Concentration Mass Load
mg/l kg/day
TOXIC OROANICS
1 Acenaphthene
4 Benzene
10 1,2 Dlchloroethane
11 1,1,1-Trlchloroethane
14 1,1,2 Trichloroethane
23 Chloroform
29 1,1-Dlchloroethylene
31 2,4-Dlchlorophenol
44 Hethylene chloride
55 Naphthalene
56 Nitrobenzene
68 Dl-n-butyl phthalate
70 Dlethyl phthalate
ji 78 Anthracene (or phenanthrene)
I 85 Tetrachloroethylene
^j 86 Toluene
87 Trlchloroethylene
Total Toxic Organlcs
TOXIC INORGANICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
1.400
<0.01
<0.01
0.015
(Rest of sample lost before It was analyzed)
0.016
1.431
0.018 t
<0.005 Ť
<0.001
0.013 *
1.148
18.981 *
0.605
<0.001
6.065
<0.005
0.018
0.074
0.004
0.060
1.122
34.947
11.817
<0.001
0.972
<0.005
* Separate settling system; oil Is collected and contract hauled.
t Organlcs were not analyzed.
t Data not transcribed from analytical sheets at proposal. (See note on page 5-6.)
*t Data Incorrectly transcribed at proposal. (See note on page 5-6.)
Effluent
2,365
24
3844
Concentration Mass Load
mg/l kg/day
<0.01
<0.01
4.0 Ť
140.0 tHt
0.085 ŤŤ
<0.01
2.2
<0.01
0.060
<0.01
<0.01
<0.01
<0.01
0.014
0.015
0.025
<0.01
146.399
0.011
0.023
<0.001
0.014
0.516
7.918
0.308
<0.001
2.739
<0.005
-------
5-19 (Continued)
BLSOfOHZC CRYSTALS PROCESS VASTtS
PUHT 304
strew Description Influent to TreaUwnt Wafer Finishing tfaťtŤ Effluent
Flow (I /nr) 2,183 182 2,367
Duration (hrs) 24 24 24
Sa*plŤ 10 Ho. 3641 3842 3844
Concentration Bass Load concentration Mass Load Concentration Bass Load
3/1 kg/day mg/l kg/day ng/t kg/day
126 Silver 0.034 * 0.025 0.025
127 Thailiuw <0.050 <0.050 <0,050
128 Zinc 1.727 32.960 f 4.231
Total Toxic inorganics
HON-COHVEHTIOWU. POLLUTAHTS
Aluminum 4.381 22.4 2.141
Barlura
Boron 0.855
Calciua
Cobalt 0.682
Bold 0.050 t 0.050
Iron 11.661 t . 20.931
u, HagnesliM
I Manganese
-4 Molybdenui
°° Palladium
Platlnua
Sodium
Tellurium
Tin 0.190
Tltanlwi
Vanadlui
Yttrlun
Phenols
Xotal Organic Carbon, 460
Fluoride 30 1.2 120
CONVENTIONAL POLLUTAHTS
Oil & Grease 41 76% 280
Total Suspended solids 2000 3400 2900
Eloctieialeai Oxygen Demand 3 <3 6
pH S.3 6.3 5.9
t Data not transcribed Croi analytical sheets at proposal, (See note on page 5-6.)
-------
tftBLB 5-20
ELECTRONIC CRYSTALS PROCESS WASTES
PLANT 380
Stream Description
Flow (I /hr)
Duration (hrs)
sample ID Ho.
affluent
658
24
ma-i
Concentration Mass Load
rag/I kg/day
Wafer Finishing Wastes
227
24
me-2
concentration Mass Load
rag/It kg/day
TOXIC ORGAHICS
8 1,2,4-Trlchlorobenzene
I
-J
3.660
10 1,2 Dlchloroethane
11 1,1,1-Trlchloroethane
13 1,1-Dlchloroethane
25 1,2-Dlchlorobenzene 132.600
26 1,3-Dlchlorobenzene 1.960
27 1.4-Dlchlorobenzene 52.600
44 Methylene chloride 0.010
66 Bls(2-ethylhexyl) phthalate
68 Di-n-butyl phthalate 0.046
85 Tetrachloroethylene 1.400
87 Trlchloroethylene 0.020
Total Toxic Organlcs 192.286
TOXIC INORGANICS
114 Antimony <0.0005
115 Arsenic <0.005
117 Beryllium <0.005
118 Cadmium 0.0003
119 Chromium <0.025
120 Copper 0.185
122 Lead 0.002
123 Mercury <0.001
124 Nlchel <0.025
125 Selenium <0.005
0.400
0.320
0.005
1.440
0.014
0.049
0.026
O.OT?
0.010
0.040
2.366
<0.0005
<0.005
<0.005
0.0013 I
<0.025
<0.005
0.026
<0.001
<0.025
<0.005
Data not transcribed from analytical sheets at proposal, (see note on page 5-6.)
-------
TRSUt 5-20 (Continued)
BtECTROHIC CRYSTALS PROCESS UASTSS
PLANT 380
Stream Description Effluent Wafer Finishing Wastes
Flow (I /hr) 658 227
Duration (hrs) 24 24
Sample ID Ho. H18-1 H18-2
Concentration Hass Load concentration Mass Load
g/t kg/day Ťg/l kg/day
126 Silver <0.015 <0.015
127 Thallium 0.038 0,0025
120 zinc 0,038 . 0.041
Total Toxic Inorganics
NOH-CONVEHf lONRL FOLUJTWnS f
Aluminum
Barium
Boron
Calcium
cobalt
Gold
Iron
W Magnesium
^ Manganese
o Molybdenum
Palladium
Platinum
sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols 0.103
Total Organic Carbon 5.4 47 *
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease 8.4 9.6
Total Suspandas! Solids 1.2 577
Biochemical Oxygen Demand 26
pH 3.0 7.6
Data not transcribed from analytical sheets at proposal. (See note on page 5-6.)
8* Data incorrectly transcribed at proposal. (See note on page 5-6.)
f non-toxic BetaIs were not analyzed.
-------
TABLE 5-21
ELECTRONIC CRYSTALS PROCESS WASTES
PUNT 401
StreaŤ Description
Flow
-------
5-21 (Continued)
IlECfROHIC OfifSWiS WKJCSSS Vf&TBS
401
Ul
I
CO
to
Streaa Description
Flow (I /hr)
Duration (hrs)
Sample ID Ho.
toxic IMORGRNICS (Continued)
126 Silver
127 Thalllua
128 Zinc
Total Toxic Inorganics
NOH-CONVBHTIOHM. POLUJTRHTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Gallium
oadolnlum
Lithium
Phenols
Total Organic Carbon
fluoride
eONVENTIONBL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
Scrubber Vastest
681
24
3799
concentration Mass Load
ťg/l kg/day
<0.006
<0.050
0.058 I
<0.02
1.65 t
1.4
0.02 *
<0.002
9.3
0.6
0.4
Acid Wastes
3.80
24
3800
Concentration Mass Load
mg/l kg/day
0.006
<0.050
0.076 t
<0.02
3.4 *
2.8
0.04
<0.002
56
33
110
Wafer Finishing Wastes*
0.80
24
3801
Concentration Mass Load
ťg/i kg/day
<0.050
<0.050
0.777
Wafer Finishing wastes*
1.75
24
3802
Concentration Mass Load
Ťg/t kg/day
<0.005
<0.030
0.023 f
12 *
10 5
5 t
0.09
0.7
990
1200
<0.02
<6
45
4.8
0.8
14
2100
* stream is contract hauled.
§ Data not transcribed from analytical sheets at proposal.
(See note on page 5-6.)
-------
TABLE 5-22
ELECTRONIC CRYSTALS PROCESS WASTES
PLANT 402
Stream Description LCD Effluent Equipment cleaning
Flow (t /he) 6308 946
Duration (hrs) 24 24
Sample ID No. 3938 383?
concentration Mass Load Concentration Mass Load
mg/* leg/day mg/l . kg/day
tOXIC ORGftHICS
4 Benzene <0.01 <0.01
11 1,1,1-Trlehloroethane <0.01
23 Chloroform <0.01 <0.01
26 1,3-Olchlorobenzena <0.01
37 1,2-Dlphenylhydrazlne
38 Ethylbenzene <0.01
39 Pluoranthene
44 Hethylene chloride <0.01 <0.01
48 Dichlorobromomethane
54 Isophorone
59 Dlnltrophenol
60 Dlnltro-o-cresol
62 N-Hltrosodlphenylamine
64 Pentachlorophenol
65 Phenol <0.01
66 8ls(2-ethylhexyl)phthalate <0.01
6? Butyl benzyl phthalate <0.01
68 Dl-M-butyl phthalate <0.01
69 Dl-H-octyl phthalate
70 Dlethyl phthalate <0.01
77 Acenaphthylene
78 Anthracene
80 Pluorene
86 Toluene <0.01
87 Trlchloroethylene <0.01 <0,01
96 Beta-endosulfan <0.01
100 Heptachlor
Total Toxic Organlcs
TOXIC INORGAMICS
114 Antimony 0.042 0.045
115 Arsenic <0.005 <0.005
117 Beryllium <0.001 <0.001
118 cadmium 0.002 0.005
119 Chromium 0.017 0.052
120 Copper 0.024 0.048
122 Lead 0.044 0.105
123 Mercury <0.001 <0.001
124 Hlckel 0.087 0.304
125 selenium <0.005 <0.005
Data not transcribed from analytical sheets at proposal. (See note on page 5-6.)
-------
TABLE 5-22 (Continued)
ELECTRONIC CRYSTALS PROCESS WASTES
PLANT 402
strew* Description LCD Effluent Equipment Cleaning
Flow (t /hr) 6308 946
Duration (hrs) 24 24
Sanple ID No. 3838 3837
Concentration Mass Load Concentration Mass Load
g/l kg/day ťg/i kg/day
126 Sliver <0.006 0.017
127 Thallium <0.05 0.070
128 Zinc 0.048 0.184
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS *
Aluminum 0.081 0.290
Barium 0.019 0.093
Boron 0.052 0.098
Calcium 21.33 89.326
Cobalt 0.006 0.018
Gold
iron 0.122 0.408
u, Magnesium 21.69 65.300
I Manganese 0.009 .033
00 Molybdenum 0.014 0.041
** Palladium
Platinum
Sodium 83.038 757.776
Tellurium
Tin 0.074 0.104
Titanium 0.003 0.007
Indium 0.6
Phenols <0.002 <0.002
Vanadium 0.165 0.482
Xttrlum 0.002 0.019
Total Organic Carbon 820 58
Fluoride 1.2 1.2
CONVENTIONAL POLLUTANTS
Oil & Grease 9.8 5.1
Total Suspended Solids
Biochemical Oxygen Demand
PH
f Data not transcribed from analytical sheets at proposal. (See note on page 5-6.)
-------
TABLB 5-23
ELECTRONIC CRYSTALS PROCESS WASTES
PLANT 403
stream Description Wafer Finishing and Acid Vastest Wafer Finishing Hastes Wafer Finishing Wastes Wafer Finishing Wastes
Flow (I /hr) 61.92 4.73 4.73 2,37
Duration (hrs) 24 24 24 24
Sample ID No. 3834-1 3834-2 3834-3 3834-4
Concentration Mass Load Concentration Mass toad Concentration Mass Load concentration Mass Load
mg/l kf/day Bg/l kg/day rag/I kg/day mg/l kg/day
TOXIC ORGAHICS
4 Benzene <0.01 HA HA HA
6 Carbon tetrachloride <0.01 HA NA HA
11 1,1,1-Trlchloroethane <0.01 HA HA HR
13 1.1-Dlchloroethane <0,01 HA NA NA
23 Chloroform " 0.040 HA NA HA
38 Bthylbenzene <0,01 HA NA HA
44 Hethylene chloride 0.050 NA , HA HA
66 Bis(2-ethylhexyl)phthalate <0.01 HA HA NA
70 Dlethyl phthalate <0.01 HA HA HA
86 Toluene 0.010 NA HA HA
87 frlchloroethylene <0.01 HA NA HA
Total loxlc Organlcs 0.09
TOXIC IHORGANICS
H4 Antimony 65.0 1.180 187.5** <0.050
115 Arsenic 0.0179 i 0.270 0.034 0.225
117 Beryllium 0.001 * HA HA HA
118 Cadmium 0.002 Ť BB HA HR
119 Chromium 0.014 I HA HA NA
120 Copper 0.143 NA HA NR
122 Lead 0.035 t HA HA , NA
123 Mercury 0.001 t NA NA ' HA
124 Nickel 0.114 HA HA HA
125 selenium 0.129 NA NR NA
** The high levels of antimony occur In the slicing machine coolant, which Is reclrculated, and then hauled for disposal.
t Composite of streams -2, -3, -4, -5, -6.
Data not transcribed from analytical sheets at proposal. (See not* on page 5-6.)
-------
TABLE 5-23 (Continued)
ELECTRONIC CRYSTALS PROCESS WASTES
PLANT 403
Stream Description
Plow (I /hr)
Duration (hrs)
Sample ID Ho.
wafer Finishing and Acid Vastest Wafer Finishing Wastes
61.92 4.13
24 24
3834-1 3834-2
concentration Kass Load Concentration Haas Load
mg/l kg/day mg/l kg/day
TOXIC iHORSftNlcs (Continued)
126 Silver <0.006
12? fhalliun <0.050
120 Zinc 0.060
NA
HA
NA
Wafer Finishing Wastes
4.73
24
3834-3
concentration Mass Load
mg/l kg/day
NA
NA
HA
Wafer Finishing Wastes
2.37
24
3834-4
Concentration Mass Load
mg/t, kg/day
HA
NA
NA
in
I
CO
Total Toxic Inorganics
HOH-CONVENTIONAL POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Bismuth
Indium
Tellurium
Tin
Titanium
Vanadium
Xttrium
total organic carbon
Fluoride
0.490
0.023
6.724
25.550
0.001
0.124
5.886
0.021
0.022
28.635
0.171
0.006
0.058
0.001
440
NA
NA
HA
HA
NA
HA
NA
NA
HA
HA
NA
NA
NA
0.360
0.570
3.200
NA
NA
HA
HA
0.4
HA
NA
HA
NA
HA
NA
HA
NA
NA
NA
HA
NA
NA
0.230
0.720
17.70
NA
NA
NA
HA
0.9
NA
NA
NA
NA
NA
HA
NA
HA
HA
HA
NA
NA
NA
0.030
9.0
0.120
NA
NA
NA
NA
0.3
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
PH
12
14
7.5
160
400
8.8
27
49
6.7
t Composite of streams -2, -3, -4. -5. -6
-------
TABLE 5-23 (Continued)
ELECTRONIC CRYSTALS PROCESS WASTES
PLANT 403
Stream Description Wafer Finishing Wastes Acid Wastes
Flow (I /hr) 2.37 47.32
Duration (hrs) 24 24
Sample ID Ho. 3834-5 3834-6
Concentration Mass Load Concentration Mass Load
g/l kg/day rag/I kg/day
TOXIC ORGANICS
4 Benzene HA HA
6 Carbon tetrachloride NA HA
11 1,1,1-Trichloroethane HA NA
13 1.1-Dichloroethane HA NA
23 Chloroform HA NA
38 Bthylbenzene HA NA
44 Methylene chloride HA NA
66 Bis(2-ethylhexyl)phthalate HA NA
70 Dlethyl phthalate HA HA
86 Toluene HA NA
87 Trlchloroethylene NA HA
Total Toxic Organlcs
TOXIC INORGANICS
114 Antimony 3.3 <0.080
115 Arsenic 0.112 0.325
117 Beryllium NA NA
118 Cedralua Hft NA
119 Chromium HA HA
120 Copper HA HA
122 Lead NA NA
123 Mercury NA HA
124 Hlckel HA NA
125 Selenium HA HA
-------
TABIE 5-23 {Continued)
BtSCtROHIC CRYSTALS PRCCSSS VXSfSB
PLANT 403
Stream Description Wafer Finishing Wastes Acid Wastes
Flow (I /hr> 2.31 47,32
Duration (hrs) 24 24
Sample ID HO. 3934-5 3834-6
Concentration ness Load concentration tfass Load
kg/day mg/1 kg/day
126 Silver HA HA
121 Thallium HA HA
128 Zinc HA HA
Total Toxic Inorganics HA HA
NOM-COHVEHTIOMAL POLLUTANTS
Aluminum HA HA
Barium HA HA
Boron HA HA
Calcium HA HA
Cobalt HA HA
Gold HA HA
Iron MA HA
Magnesium HA HA
W Manganese HA HA
' Molybdenum HA Hft
00 Palladium HA HA
Platinum HA HA
Sodium HA HA
Tin Hft HA
EJismouth 0.020 0.040
Indium 0.340 O.S10
Tellurium 0.120 0.110
Total Organic Carbon
Fluoride 0.6 36
CONVKWMONM. POLLUTANTS
Oil Ť. Grease SO 12
Total Suspended Solids 18 4.0
Biochemical Oxygen DeaajiO
pH 7.4 3.0
-------
ELECTRONIC CRYSTALS PROCESS WASTES
PLANT 404
Stream Description Ga*s Crystal Effluent Reid Wastes** Wafer Slicing** Scrubber Wastes
Flow (i /hr> 20500 56.7 157.7 850
Duration (hrs) 24 24 24 24
Sample ID Mo. 3729 3730 3731 3732
Concentration Mass Load Concentration Mass Load Concentration Mass Load Concentration Mass Load
mg/1 kg/day mg/l kg/day mg/t kg/day Ťg/l kg/day
TOXIC ORGRNICS
4 Benzene
6 Carbon tetrachlorlde 0.031
7 Chlorobenzene <0.01
8 1,2.4-Trlchlorobenzene
11 1,1.1-lrlchloroethane 0.238 0.458
23 Chloroforml 0.013 0.168 <0.01
24 2-Chlorophenol <0,01
25 1,2-Dichlorobenzene
29 1,1-Dlchloroethylene 0.039
30 1.2-Trans-dichloroethylene <0.01
31 2,4-Dlchlorophenol <0.01 <0.01
44 Methylene chloride 0.126 0.026 0.038 0.054
45 Methyl chloride <0.01 <0.01 <0.01 '
57 2-Mitrophenoi j;
58 4-Hltrophenol ''
65 Phenol <0.01 <0.01
66 Bls(2-othylhexyl)phthalate
67 Butyl benzyl phthalate 0.031
68 Dl-H-butyl phthalate <0.01 <0.01 <0.01 <0.01
70 Dlethyl phthalate <0.01 <0.01
85 Tetrachloroethylene <0.01 0.011
86 Toluene <0.01 <0.01
87 Trtchloroethylene 3.100 1.700 <0.01 0.660
121 Cyanide* 0.017 0.013 <0.004 <0.004
Total Toxic organlcs 3.534 2.208 0.237 0.714
TOXIC IHORQflNICS
}
114 antimony 0.003 t 0.100 0.260 0.001
115 ftrsenlc 3.03 62.500 80.300 0.043 i
117 Beryllium <0.010 0.010 t <0.010 <0.010
118 Cadmium 0.040 f 0.002 * 0.005 t <0.010
119 Chromium 0.030 6.060 0.720 0.030 Ť
120 Copper 0.040 i 2.200 2.300 0.020 t
122 Lead 0.040 t 0.040 0.065 f 0.030 f
123 Mercury 0.001 0.009 0.010 t 0.001
124 Sickel 0.100 0.120 0.120 0.110
125 Selenlun <0.005 0.006 0.100 t <0.005 t
* Hot Included In TTO sumatlon,
** Waste contract hauled.
Data not transcribed fro* analytical sheets at proposal. (See note on page 5-6.)
-------
TABLE 5-24 (Continued}
ELBCTROHIC CWfSatS PROCESS
PUNT 404
Strea* Description OoKs Crystal SEtluent Acid Vastts * * Wafer slicing * * Scrubber wastes
Flow U /hr) 20500 56.7 157.7 850
Duration (hrs) 24 24 24 24
Sample ID Ťo. 3729 3730 3731 3732
Concentration Mass Load Concentration Mass Load Concentration Mas* Load Concentration Hass Load
ng/l kg/day iig/l kg/day *g/t kg/day Ťg/l kg/day
toxic INORGANICS (continued}
126 Sliver <0.006 0.003 0.010 0.012 t
127 Thallium <0.050 0.016 0.0^0 Ť <0.050
128 Zinc <0.090 0.060 0.030 0.040
Total Toxic inorganics 0.057 0.007 2.076 0.0014 0.165 0.0086 5.866 65.25
HOW-CONVENTIONAL POLLUTANTS t
ftlunlnua 0.19 0.29
Barium 0.01 , 0.01
Boron 21.38 0.27
Calcium 7.29 9.31
Cobalt <0.01
SoW <0.05 0.020 0.050 <0.05
Iron 0.23 0.24
Magnesium 0.92 1.27
Manganese <0.01 0.130 0.032 <0,01
Molybdenum 0.13 <0.010 <0.010 0.09
Palladium <0.025 0.022 0.063 <0.025
Platinum <0.03 <0.200 <0.200 <0.030
Sodium 56.91 10.24
tellurium <0.02 0.830 1.160 <0.02
Tin 0.03 <0.01
Titanium <0.01 0.100 0.031 <0.01
Tungsten - ^
-------
TABLE 5-24 (Continued)
ELECTRONIC CRYSTALS PROCESS WASTES
PLANT 404
Stream Description
Plow (I /hr)
Duration (hrs)
Sample ID Ho.
TOXIC OKGAHICS
4 Benzene
6 Carbon tatrnchlorlde
7 Chlorobenzeno
81,2,4~TrIchlorobenzene
11 1,1,1-Trlchloroethane
23 Chloroform
24 2~Chlorophenol
25 1,2-Dlchlorobenzene
29 lťl-Dichloroethylene
30 1,2-lrans-dlehloroethylene
31 2,4-Blchlorophenol
44 Hethylene chloride
45 Hethyl chloride
57 2-Nltrophenol
58 4-Nltrophenol
65 Phenol
66 Bls(2-ethylhexyl)phthalate
67 Butyl benzyl phthalate
68 Dl-N-butyl phthalate
70 Diethyl phthalate
85 Tetrachloroethylene
86 Toluene
87 Trichloroethylene
121 cyanide*
Total Toxic Organlcs
TOXIC INORGANICS
Scrubber Hastes
863
24
3733
Concentration Mass Load
kg/day
<0.0l
0.021
<0.01
0.042
0.024
0.014
2.500
<0.01
0.023
<0.01
<0.01
0.407
<0.004
3.031
Scrubber Hastes
863
24
3734
Concentration Mass Load
Ťf/t kg/day
<0.01
<0.01
0.013
<0.01
<0.01
0.021
0.012
0.060
<0.01
0.170
<0.01
0.023
<0.01
0.021
0.880
0.026
1.20
Semiconductor Effluent
45740
24
3735
Concentration Mass Load
rag/t kg/day
<0.01
0.054
<0.01
0.017
0.034
0.380
0.021
<0.01
<0.01
0.105
2.700
0.006
3.311
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Hercury
124 Nickel
125 Selenium
0.005
0.097
0.001
0.009
0.088
0.048
0.090
<0.001
0,217
<0.005
* Hot Included In TTO summation.
f Data not transcribed from analytical sheets at proposal.
0.001
0.083
<0.010
<0.010
0.130
0.030
0.020
<0.001
0.080
0.005
(See note on page 5-6.)
0.001
0.089
<0.010
<0.010
0.140
0.030
0.040
<0.001
0.120
0.020
-------
TABLE 5-24 (Continued;
ELECTRONIC CRYSTALS PROCESS WASTES
PLANT 404
Ui
I
10
N)
StreaM Description
Flow It, /hr>
Duration (Itrs)
sample ID Wo.
126 sliver
127 Thallium
128 Zinc
Total Toxic Inorganics
HOW-CONVBHTIONftL POLLUTANTS
AlUfllnusR
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
.yttrium
Phenols
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Scrubber Wastes *
863
24
3733
Concentration Mass Load
9/1 kg/day
<0.004
<0.030
0.083
0.477
0.015
0.14
10.371
0.011
<0.02
0.194
1.439
0.01
0.028
<0.08
<0,05
13.224
<0.02
0.039
0.007
0.029
0.023
3.1
47
9.1
Scrubber Wastes
863
24
3734
Concentration Mass Load
mg/l kg/day
<0.006
<0.050
0.050
1,52
0.01
0.13
10.36
<0.01
<0.05
0.27
1.31
0.01
0.07
<0.025
<0.03
16.43
<0.02
0.01
<0.01
0.04
<0.01
0.13
21
17
Semiconductor Effluent
45740
24
3735
Concentration Mass Load
Ťg/l leg/day
<0.006
<0.050
0.140
0.49
0.01
0.13
9,61
<0.01
<0.05
0.2
1.25
<0.01
0.06
<0.025
<0,03
15.3
<0.02
0.01
0.01
.02
,01
0.
0.
0.13
38
7.7
Oil & Grease 0.1
Total Suspended Solids 4.0
Biochemical Oxygen Demand <3.0
pH 3.3
0.9
2.0
<3
2.4
1.1
3.5
<3
6.3
t Data not transcribed from analytical sheets at proposal. (See note on page 5-6.)
-------
TABU! 5-25
ELECTRONIC CRYSTALS PROCESS VASTBS
PLAKT 405
stress Description Influent to Treatment silicon Crystal affluent Gate crystals effluent Effluent
Flow (& /hr) 1135 1135 42250 70958
Duration (hrs) 24 24 24 24
Sample ID Bo. 4033 ' 4035 4038 4036
Concentration Mass Load Concentration Mass Load Concentration Mass Load Concentration Mass Load
ag/S kg/da? ng/t kg/day mg/l kg/day mg/l kg/day
tOXIC ORGMIICS
4 Benzene KR HA <0.01
23 Chloroform Nft Hft <0.01
24 2-Chlorophenol 1Ž HA 0.029 Ť
27 1,4-Dlchlorobenzene HA HA 0.086 8 0.081
30 1,2-trans-dlchloroetbylene HA HA <0.01
44 Hethylene chloride HA NA 0.620 8 0.490
55 Naphthalene NA NA <0.01
57 2-Nltrophenol HA NA 1.200 *
58 4-Hltrophenol HR Hft 0.065 #
65 Phenol NA HA 0.480 8
66 Bls(2-ethylhexyl)phthalate HA MB <0.01
68 Dl-H-butyl phthalate HA HA <0,01 <0.0i
69 Di-H-octyl phthalate HA HA 0.180
U, 70 Dlethyl phthalate HA HA <0.01 0.025
I 78 Anthracene HA Hft . <0.01 <0.0l
vo 80 Fluorene HA HA _ <0.01 <0.01
w 81 Phenanthrene HA Nft <0.01 <0.01
85 Tetrachloroethylene HA HA . 0.120
86 Toluene HA Hft 0.023 * 0.020
87 Trlchloroethylene HA HA 3.800 f ' 0.110
121 Cyanide* HA HA <0.002 <0.002
Total Toxic Organlcs HA Hft 6.423 0.905
TOXIC IHORGAHICS
114 Antimony 0.150 0.019 f 0.002 0.002 t
115 Arsenic <0.002 0.200 1.80 0.180
117 Beryllium <0.005 <0.005 <0.005 <0.005
118 Cadmium 0.005 f 0.006 i <0.005 <0.005
119 Chromium 251 54.3 0.401 0.070 ť
120 Copper 0.139 0.275 * 0.058 0.012 Ť
122 Lead 0.153 0.069 ' <0,050 <0.050
123 Mercury <0.00i <0.001 <0.001 <0.001
124 Hlckel 2.580 0.327 0.314 0.084
125 Selenium <Ť.002 <0.050 <0.002 <0.002
* Not Include In TTO summation,
tt Data not transcribed from analytical sheets at proposal. (See note on page 5-6.)
-------
TABLE 5-25 (Continued)
ELECTRONIC CRYSTALS PROCESS WASTES
PLANT 405
stream Description Influent to Treatťent Silicon Crystal Effluent GaAs Crystals Effluent Effluent
Plow (I /hr) 1135 1135 42250 70958
Duration (hrs) 24 24 24 24
Sample ID Ho. 4033 4035 4038 4036
concentration Mass Load concentration Hass Load concentration Mass Load concentration Mass Load
ťg/l kg/day mg/t kg/day ng/i, fcg/day mg/l kg/day
TOXIC INORGANICS (Continued)
126 Silver 0.002 f 0.003 * 0.002 * <0.001
127 Thalllua <0.001 <0.025 <0.001 0.002 t
128 Zinc 0.668 0.628 0.107 0.048 ť
Total Toxic Inorganics
NON-CONVBNTIOHAL POLLUTANTS
Aluminum m. im NA HA
Barium NA NA NA NA
Boron NA NA - NA NA
Calcium NA NA NA NA
Cobalt NA NA NA NA
Gold NA NA NA NA
Iron NA NA NA NA
<-" Magnesium NA NA NA HA
A. Manganese NA NA NA NA
4^ Molybdenum NA NA NA NA
Palladium NA . NA NA MA
Platinum NA NA NA HA
Sodium NA NA NA NA
Tellurium NA NA NA NA
Tin NA HA NA NA
Titanium NA NA NA NA -
vanadium HA - m m m
Yttrium NA KK NA NA
Lithium NA NA HA NA
Phenols HA m 0.10 <0.01
Total Organic Carbon NA NA 160 40
Fluoride 10.400 2.1 66 20
CONVENTIONAL POLLUTANTS
Oil 6 Grease 52 28
Total Suspended Solids 1550 2700 560 60
Biochemical oxygen Demand
pH
-------
SECTION 6
SUBCATEGORIES AND POLLUTANTS TO BE REGULATED.
EXCLUDED OR DEFERRED
This section cites the E&EC subcategories which are being (1)
regulated or (2) excluded from regulation. In addition, this
section explains, for those subcategories being regulated, which
pollutants are being regulated and which pollutants are being
excluded from regulation.
6.1 SUBCATEGORIES TO BE REGULATED
Based on wastewater characteristics presented in Section 5. dis-
charge effluent regulations are being proposed for the Semiconductor
and the Electronic.Crystals subcategories.
<***s
6.1.1 Pollutants To Be Regulated
The specific pollutants selected for regulation in these
subcategories are.pH, total suspended solids, fluoride, total toxic
organics. and arsenic. Arsenic is to be regulated only in the
Electronic Crystals subcategory and only at facilities that produce
gallium arsenide or indium arsenide crystals. Total suspended
solids are also only to be regulated in the Electronic Crystals
subcategory. The rationale for regulating these pollutants is
presented below.
(PH) Acidity or Alkalinity
During semiconductor manufacture, alkaline wastes result from
alkaline cleaning solutions; and during electronic crystal
manufacture, alkaline wastes result from the use of hydroxides and
carbonates from crystal growth and cleaning and rinsing operations.
Acid wastes occur in both subcategories from the use of acids for
cleaning and etching operations. The pH in the raw waste can range
from 1.1 to 11.9 from these operations.
Although not a specific pollutant, pH is a measure of acidity or
alkalinity of a wastewater stream. The term pH is used to describe
the hydronium ion balance in water. Technically, pH is the negative
logarithm of the hydrogen ion concentration. A pH of 7 indicates
neutrality, a balance between free hydrogen and free hydroxyl ions.
A pH above 7 indicates that the solution is alkaline, while a pH
below 7 indicates that the solution is acidic.
6-1
-------
Waters with a pH below 6.0 are corrosive to water works structures.
distribution lines, and household plumbing fixtures and such
corrosion can add constituents to drinking water such as iron,
copper, zinc, cadmium, and lead. Low pH waters not only tend to
dissolve metals from structures and fixtures, but also tend to
redissolye or leach metals from sludges and bottom sediments.
Waters with a pH above 9.9 can corrode certain metals, are
detrimental to most natural organic materials, and are toxic to
living organisms.
Total Suspended Solids
Suspended solids are found in wastewaters from electronic crystals
manufacturers at an average concentration of 616 milligrams per
liter. Suspended solids result from slicing, lapping, and grinding
operations performed on the crystal. Some; abrasives used for these
operations may also enter the wastewaters.
Suspended solids increase the turbidity of water, reduce light
penetration, and impair the photosynthetic! activity of aquatic
plants. Solids, when transformed to sludge deposit, may blanket the
stream or lake bed and destroy the living spaces for those benthic
organisms that would otherwise occupy the habitat.
!
Fluoride
Hydrofluoric acid is commonly used as an etchant in providing proper
surface texture for application of other materials and creating
depressions for dopants in device manufacture. Fluoride
concentrations have been observed as high as 147 milligrams per
liter in raw wastes from semiconductor manufacture, and as high as
378 milligrams per liter in raw wastes from electronic crystals
manufacture. ;
Although fluoride is not listed as a priority pollutant, it can be
toxic to livestock and plants, and can cause tooth mottling in
humans. The National Academy of Sciences recommends: (1) two
milligrams per liter as an upper limit for watering livestock and.
(2) one milligram per liter for continuous use as irrigation water
on acid soils to prevent plant toxicity and reduced crop yield.
Although some fluoride in drinking water helps to prevent tooth
decay, EPA's National interim Primary Drinking Water Regulations set
limits of 1.4 to 2-.4 milligrams per liter in drinking water to
protect against tooth mottling.
6-2
-------
Arsenic
Arsenic is being regulated only in the Electronic Crystals
subcategory and only at facilities that produce gallium arsenide or
indium arsenide crystals. The manufacture of gallium arsenide and
indium arsenide crystals generates arsenic wastes from slicing,
grinding, lapping, etching, and cleaning operations. Concentrations
in raw wastes from crystals manufacture have been observed as high
as 80 milligrams per liter.
Certain compounds of arsenic are toxic to man both as poisons and as
carcinogenic agents. The carcinogenic effects have only recently
been discovered and little is known about the mechanism. Arsenic
can be ingested, inhaled, or absorbed through the skin. The EPA
1980 water quality criteria for protection of aquatic life is 0.44
milligrams per liter.
Total Toxic Organics
Toxic organic pollutants were frequently found in wastewaters from
semiconductor and electronic crystal facilities. The sources of
these organics are operations such as solvent cleaning, developing
of photoresist, and stripping of photoresist.
Because of the wide variety of solvents used in the manufacture of
semiconduqtors and electronic crystals, and the subsequent large
number of toxic organics found in process wastewaters. the Agency
has decided that total toxic organics (TTO) be used as the pollutant
parameter for discharge limitations. TTO is the sum of the concen-
trations of toxic organics listed in Table 6-1 (which is found on
page 6-4} and found at concentrations greater than 0.01 milligrams
per liter.
6.2 TOXIC POLLUTANTS AND SUBCATEGORIES NOT REGULATED
The settlement agreement explained in Section 2 contained
provisions authorizing the exclusion from regulation, in certain
circumstances, of toxic pollutants and industry categories and
subcategories. These provisions have been rewritten in a Revised
Settlement Agreement which was approved by the District Court for
the District of Columbia on March 9. 1979. NRDC v. Costle. 12 ERC
1833.
6.2.1 Exclusion of Pollutants
Ninety-five toxic pollutants are being excluded from regulation for
both the Semiconductor and Electronic Crystals subcategories. The
basis for exclusion for eighty-two of these pollutants is Paragraph
6-3
-------
8(a)(iii) which allows exclusion for pollutants which are not
detectable with state-of-the-art analytical methods. The basis of
exclusion for another nine of these pollutants is also provided by
Paragraph 8(a)(iii) which allows exlusion of pollutants which are
present in amounts too small to be effectively reduced. Four toxic
pollutants are being excluded from regulation because these
pollutants are already subject to effluent limitations and standards
being promulgated under the Metal Finishing Category. This is
permitted by Paragraph 8(a)(iii).
Toxic Pol-
lutant No.
TABLE 6-1
POLLUTANTS COMPRISING TOTAL TOXIC ORGANICS
Toxic Pol-
lutant No.
6 carbon tetrachloride
8 1.2,4-trichlorobenzene
10 1,2-dichloroethane
11 1.1.1-trichloroethane
14 1.1,2 trichloroethane
21 2.4.6-trichlorophenol
23 chloroform
24 2-chlorophenol
25 1.2-dichlorobenzene
26 1.3-dichlorobenzene
27 1.4-dichlorobenzene
29 1.1-dichloroethylene
31 2.4-dichlorophenol
37 1,2-diphenylhydrazine
38 ethylbenzene
44 methylene chloride
48 dichlorobromoethane
54 isophorone
55 naphthalene
57 2-nitrophenol
58 4-nitrophenol
64 pentachlorophenol
65 pheriol
66 bis(2-ethylhexyl)phthalate
67 butyl benzyl phthalate
68 di-n-butyl phthalate
78 anthracene
85 tetrachloroethylene
86 toluene
87 trichloroethylene
In addition to the exclusion of the ninety-five pollutants for both
subcategories. another toxic pollutant is being excluded for the
Semiconductor subcategory only. This pollutant is arsenic and is
being excluded under Paragraph 8(a)(iii) because it was found in
amounts too small to be effectively treated.
The nine toxic pollutants that are being excluded under Paragraph
8(a)(iii) because they were found in amounts too small to be
effectively treated are: antimony, beryllium, cadmium, mercury.
selenium, silver, thallium, zinc, and cyanide.
The four toxic pollutants which are being excluded under Paragraph
8(a)(iii) because they are subject to effluent limitations being
promulgated under the metal finishing category are as follows:
nickel, copper, chromium, and lead.
6-4
-------
The eighty-two pollutants which are being excluded under 8 (a)(iii)
because they were not detected are presented in Table 6-2 on page
6-7.
6.2.2 Exclusion of Subcateqories
Seventeen subcategories are being excluded from this regulation
based on either paragraph 8(a)(iii) or paragraph 8(a)(iv) of the
Revised Settlement Agreement. Five subcategories are being excluded
under Paragraph 8(a)(iii) because pollutants are found only in trace
amounts and in quantities too small to be effectively reduced by
treatment. These subcategories are magnetic coatings, mica paper.
carbon and graphite products, and fluorescent lamps. Incandescent
lamps are being excluded on the same grounds, with the exception of
chromium which is excluded under paragraph 8(a)(iii) because the
sulfuric-chromium acid cleaning process will be regulated under the
metal finishing category. Eight subcategories are being excluded
under Paragraph 8(a)(iii) because the pollutants will be effectively
controlled by technologies upon which are based other effluent
limitations and pretreatment standards. Six of the eight
subcategories generate wastewater from unit operations which will be
covered by metal finishing: these are switchgear. resistance
heaters, ferrite devices, capacitors (fluid-filled), transformers
(fluid-filled), and the subcategory of motors, generators, and
alternators. Another subcategory. insulated devices-plastic and
plastic laminated, will be covered by the the plastic molding and
forming regulation. The last subcategory, insulated wire and cable,
will be covered by a number of other categories which include
aluminum and aluminum alloys, copper and copper alloys, iron and
steel, plastics processing, and metal finishing.
Two subcategories are being excluded from regulation under Paragraph
8(a)(iv) because no water is used in the manufacturing process;
these are resistors and dry transformers. Another subcategory. fuel
cells, is also being excluded under Paragraph 8(a)(iv) because there
are only two or three plants in this subcategory and fuel cells are
not manufactured on a regular basis..
Finally, one subcategory is being, excluded under both 8(a)(iii) and
8(a)(iv). All pollutants except copper and lead are being excluded
under 8(a)(iii) because these pollutants are present only in trace
amounts and are not found in treatable quantities. Copper generated
by this subcategory is being excluded from regulation under
Paragraph 8(a)(iii) because the unit operation which generates
copper will be covered by metal finishing. Lead found in the
subcategory is being excluded from regulation under Paragraph
8(a)(iv) because it is unique to two plants.
-------
6.3 CONVENTIONAL POLLUTANTS NOT REGULATED
BOD, fecal coliform. and oil and grease are not being regulated for
either subcategory because they were found at concentrations below
treatability. Total suspended solids (TSS) is not being regulated
in the case of semiconductors because it was found at an average
concentration of 10 milligrams per liter which is below treatability.
6.4 SUBCATEGORIES DEFEREED
Two subcategories of the Electrical and Electronic Components
category were proposed for regulation on March 11. 1983, under Phase
II of Electrical and Electronic Components,, These subcategories are
electron tubes and luminescent materials (referred to as
phosphorescent coatings in this document).
6-6
-------
TABLE 6-2
TOXIC POLLUTANTS NOT DETECTED
TOXIC POLLUTANT
1. Acenaphthene 47.
2. Acrolein 51.
3. Aerylonitrlie 52.
4. Benzene 53.
5. Benzidine 56.
7. Chlorobenzene 59.
9. Hexachlorobenzene 60.
12. Hexachloroethane 61.
13. 1,1-Dichloroethane 62.
15. 1,1,2,2-Tetrachloroethane 63.
16. Chloroethane 69.
18. Bis(2-chloroethyl)ether 70.
19. 2-Chloroethyl Vinyl Ether (Mixed) 71.
20. 2-Chloronaphthalene 72.
22. p-Chloro-m-cresol 73.
28. 3,3'-Dichlorobenzidine 74.
30. 1,2-trans-Dichloroethylene 75.
32. 1,2-Dichloropropane 76.
33. l,3-Dichloropropylene(l,3-Dichloropropene) 77.
34. 2,4-Dimethyl Phenol 79.
35. 2,4-Dinitrotoluene 80.
36. 2,6-Dinitrotoluene 81.
39. Fluoranthene . 82.
40. 4-Chlorophenyl Phenyl Ether 83.
41. 4-Bromophenyl Phenyl Ether 84.
42. Bis(2-chloroisopropyl)ether 88.
43. Bis(2-chloroethoxy)methane 89.
45. Methyl Chloride(Chloromethane) 90.
46. Methyl Bromide (Bromomethane)
Bromoform (Tribromomethane)
Chlorodibromomethane
Hexachlorobutadiene
Hexachlorocyclopen t ad iene
Nitrobenzene
2,4-Dinitrophenol
4,6-Dinitro-o-cresol
N-Nitrosodimethylamine
N-Nitrosodiphenylaraine
N-Nitrosodi-n-propylamine
Di-n-octyl Phthalate
Diethyl Phthalate
Dimethyl Phthalate
1,2-Benzanthracene [ Benzo(a)anthracene]
Benzo(a)Pyrene (3,4-Benzopyrene)
3,4-Benzofluoranthene [Benzo(b)fluoranthene]
11,12-Benzofluoranthene [Benzo(k)fluoranthene]
Chrysene
Acenaphthylene
1,12-Benzoperylene [Benzo(ghi)perylene]
Fluorene
Phenanthrene
1,2,5,6-Dibenzathracene [Dibenzo(a,h)anthracene]
Indeno(1,2,3-cd)pyrene (2,3-O-Phenylenepyrene)
Pyrene
Vinyl Chloride (Chloroethylene)
Aldrin
Dieldrin
-------
I
oo
TABLE 6-2
TOXIC POLLUTANTS NOT DETECTED
(Continued)
TOXIC POLLUTANT
91. ehlordane
(Technical Mixture and Metabolites)
92. 4,4'-BDT
93. 4,4'-DDE(P,P'-DDX)
94. 4,4'-DDD(P,P'-TDE)
95. Alpha-Endosu 1 fan
96. Beta-Endosulfan
91. Endosulfan Sulfate
98. Endrin
99. Endrin Aldehyde
100. Heptachlor
101. Heptachlor Epoxlde(BHC-Hexachloro-
cyclohexane)
102.- Alpha-BHC
103. Beta-BHC
104. Gamma-BHC(Lindane)
105. Delta-BHC
106. PCB-1242 (Aroclor 1242)
107. PCB-1254 (Aroclor 1254)
108. PCB-1221 (Aroclor 1221)
109. PCB-1232 (Aroclor 1232)
110. PCB-1248 (Aroclor 1248)
111. PCB-1260 (Aroclor 1260)
112. PCB-1016 (Aroclor 1016)
113. Toxaphene
116. Asbestos
129. 2,3,1,8-fetrachlorodibenzo-p-dioxin(TCDD)
-------
SECTION 7
CONTROL AND TREATMENT TECHNOLOGY
The wastewater pollutants and pollutant parameters of concern
in the manufacture of semiconductors and electronic crystals.
as identified in Section 6. are arsenic, total toxic organics.
fluoride, suspended solids, and pH. A discussion of the
treatment technologies currently practiced and other applicable
technologies for the reduction of these pollutants is presented
below, followed by an identification of six treatment system
options.
7.1 CURRENT TREATMENT AND CONTROL PRACTICES
Wastewater treatment techniques currently used in the semi-
conductor and electronic crystal industries include both
in-process and end-of-pipe waste treatment. In-process waste
treatment is designed to remove pollutants from contaminated
manufacturing process wastewater at some point in the manufac-
turing process. End-of-pipe treatment is wastewater treatment
at the point of discharge.
7.1.1 Semiconductor Subcateqory
In-process Control In-process control techniques with wide-
spread use in this subcategory are collection of spent solvents
for resale or contractor hauling, and treatment or contract
hauling of the concentrated fluoride wastestream. Contract
hauling, in this instance, refers to the industry practice of
contracting with a firm to collect and transport wastes for
off-site disposal.
Available information indicates that all semiconductor
facilities collect spent solvents to some degree. Fifteen of
45 plants surveyed either treat or have contract-hauled the
concentrated fluoride stream.
Rinse water recycle (as much as 85 percent) is practiced at
three of the plants that were sampled. The pollutants present
in the reused process wastewater are removed in the deionized
water production area. Although reuse conserves water and
decreases wastewater discharge, certain facilities have found
recycle to result in frequent process upsets and subsequent
product contamination. Because of these problems, this
technology has limited applicability as the basis for national
standards.
7-1
-------
End-of-pipe treatment End-of-pipe controls consist primarily
of neutralization which is practiced by all dischargers for pH
control. One plant uses end-of-pipe precipitation/clarifi-
cation for control of fluoride.
7.1.2 Electronic Crystals Subcategory
In-Process Control In-plant control techniques at electronic
crystal manufacturers are similar to those in the semiconductor
subcategory. Segregation and collection of spent solvents for
resale or contract disposal is practiced to some degree at all
plants. Of eight plants visited, two treat! their concentrated
fluoride stream; one has the fluoride waste contract hauled.
End-of-Pipe Treatment Treatment technologies currently being
used at electronic crystals plants include neutralization and
precipitation/clarification. All six direct dischargers treat to
control pH. suspended solids and fluoride. One direct discharger
also treats end-of-pipe to reduce arsenic.
7.2 APPLICABLE TREATMENT TECHNOLOGIES
7.2.1 pH Control
Acids and bases are commonly used in the manufacture of semi-
conductors and electronic crystals and result in process waste
streams exhibiting high or low pH values. Sodium hydroxide and
sodium carbonate are used in some crystal growth processes and
for caustic cleaning. Sulfuric, nitric and hydrofluoric acids
are used for etching and acid cleaning operations.
Several methods can be used to treat acidic or basic wastes.
Treatment is based upon chemical neutralization usually to pH 6-
9. Methods include: mixing acidic and basic wastes, neutrali-
zing high pH streams with acid or low pH streams with bases. The
method of neutralization used is selected on a basis of overall
cost. Process water can be treated continuously or on a batch
basis. When neutralization is used in conjunction with precipi-
tation of metals it may be necessary to use a batch method
regardless of flowrate.
Hydrochloric or sulfuric acid may be used to neutralize alkaline
wastewaters; sulfuric acid is most often chosen because of its
lower cost.
Sodium hydroxide (caustic soda), sodium carbonate (soda ash), or
calcium hydroxide (lime) may be used to neutralize acidic
wastewater. The factors considered in selection include price.
neutralization rate, storage and equipment costs, and neutral-
ization end products. Sodium hydroxide is more expensive than
7-2
-------
many other alkalis but is often selected due to the ease of
storage, rapid reaction rate and the general solubility of its
end product.
7.2.2 Fluoride Treatment
Fluoride appears in semiconductor and electronic crystals
wastewater because of the use of hydrofluoric acid and ammonium
bifluoride as etching and cleaning agents. Basically two options
are available to reduce fluoride in wastewaters from these facil-
ities: chemical precipitation of fluoride followed by solids
removal, or isolation for contract hauling of strong fluoride
wastes.
The most usual treatment procedure practiced today in the United
States for reducing the fluoride concentration in wastewater is
precipitation by the addition of lime followed by clarification.
Calcium fluoride is formed:
Ca(OH)2 + 2F~ = CaF2 + 2OHT
The theoretical solubility of calcium fluoride in water is 7.8 mg
fluoride ion per liter at 18°C. The treatability of fluoride in
industrial wastewaters however is higher and- is dependent on the
characteristics of the specific wastewater. Data from the semi-
conductor subcategory show that plants using precipitation and
clarification treatment technologies are achieving an average
effluent concentration of 14 milligrams per liter fluoride.
Hydroxide precipitation has proven to be an effective technique
for removing many pollutants from industrial wastewater. Metal
ions are precipitated as hydroxides and fluoride is precipitated
as insoluble calcium fluoride. The system operates at ambient
conditions and is well suited to automatic control. Lime is
usually added as a slurry when used in hydroxide precipitation.
The slurry must be kept well mixed and the addition lines
periodically checked to prevent blocking, which may result from a
buildup of solids. The use of hydroxide precipitation does
produce sludge requiring disposal following precipitation. The
performance of a precipitation system depends on several varia-
bles. The most important factors affecting precipitation
effectiveness are:
1. Addition of sufficient excess chemicals to drive the
precipitation reaction to completion. If treatment
chemicals are not present in slight excess con-
centrations, some pollutants will remain dissolved in
the waste stream.
2. Maintenance of an alkaline pH throughout the
precipitation reaction and subsequent settling.
7-3
-------
3. Effective removal of precipitated solids.
Removal of suspended solids or precipitates by gravitational
forces may be conducted in a settling tank, clarifier. or lagoon.
but the performance of the unit is a function of the retention
time, particle size and density, and the surface area of the
sedimentation chamber. Accumulated sludge can then be removed
either periodically or continuously as in the case of a clarifier,
The effectiveness of a solids settling unit can often be enhanced
by the addition of chemical coagulants or flocculants which
reduce the repulsive forces between ions or particles and allow
them to form larger floes which are then removed more easily.
Commonly used coagulants include ferric sulfate and chloride;
commonly used flocculants are organic polyelectrolytes.
An applicable technology for further reduction of fluoride is
filtration of the waste stream following precipitation and
clarification. Filtration is commonly used in water and
wastewater treatment for the removal of finely suspended
particles not removed by gravity separation.
A filtration unit commonly consists of a container holding a
filter medium or combination of media such as sand or anthracite
coal, through which is passed the liquid stream. The unit can
operate by gravity flow or under pressure. Periodic backwashing
or scraping of the media is necessary to remove particles
filtered from the liquid stream and prevent clogging of the
filter. The proper design of a filtration unit considers such
criteria as filter flow rate (gpm/sq. ft.};, media grain size, and
density.
For the electrical and electronic components category, the
usefulness of filtration technology is questionable. An
evaluation of the effectiveness of precipitation and clari-
fication in this industry has shown that this technology can
achieve an effluent concentration of approximately 14 mg/8..
Addition of a filtration unit would not further reduce the
fluoride concentration significantly (approximately three
percent) since 14 mg/8. of fluoride is approximately equal to the
dissolved calcium fluoride concentration soon after formation of
the precipitate. Insoluble filterable calcium fluoride would
probably constitute only a small fraction of the 14 m/4 fluoride.
7.2.3 Arsenic Treatment
Arsenic is found in the wastewaters of plants fabricating
crystals of gallium arsenide and indium arsenide. These wastes
are found in the form of powdered gallium arsenide or indium
arsenide and result from slicing, lapping, and polishing of
crystals. Dissolved arsenides result from crystal etching. The
aim of wastewater treatment for arsenic is to remove arsenic from
7-4
-------
the water in the form of an insoluble sludge, which may then be
disposed of in a manner which keeps it permanently segregated
from the environment.
Probably the most common technique used today for arsenic treat-
ment, as discussed in the wastewater treatment literature, is
alkaline precipitation with lime followed by clarification. This
has been reported to reduce arsenic concentrations to the 1-10
milligrams per liter range. The addition of coagulants such as
ferric sulfate or ferric chloride can further reduce the con-
centration of arsenic; levels of 0.05 milligrams per liter have
been reported in the literature. Some additional removal can
then be achieved using a filtration polishing step. Precipita-
tion/clarification technology for arsenic reduction has been
demonstrated in the industry (see page 7-2).
A general discussion of the technologies of precipitation, clari-
fication and filtration was presented in the previous subsection
dealing with the treatment of fluoride in wastewater. Filtration
technology has not been demonstrated at any plant in this indus-
try and. as with fluoride, the technology would be expected to
provide only minimal further reduction of arsenic in plant
effluents.
7.2.4 Total Toxic Organics Control and Treatment
Toxic organics are found in the wastewaters of semiconductor and
electronic crystal facilities as a result of contamination from
various process streams and as a result of dumping.spent solvent
baths. The two most applicable control or tratment technologies
for limiting toxic organic discharges from semiconductor and
electronic crystal plants are solvent management and carbon
adsorption. Both of these control technologies are discussed
below.
Solvent Management Solvent management refers to the practice
of preventing spent solvent baths, containing toxic organics.
from entering the plant wastewater streams. While a small amount
of the solvent baths will enter the wastewaters through process
contamination (e.g., drag out), plants substantially reduce toxic
organic discharges by transferring the used solvent baths to
tanks or drums for disposal. Transfer is done both manually and
mechanically through minor piping modifications.
Available data and information show that the above practice of
collecting solvents is done at all plants to some degree. The
effectiveness of solvent management (i.e.. the effluent reduction
of toxic organics achieved) depends upon the extent to which
plants collect the spent solvents and the extent to which they
are handled properly in transferring the spent solvents to tanks
7-5
-------
and drums for disposal. Plants with the best solvent management
programs use well designed segregation controls or practices to
minimize solvent bath spills into rinse or other process streams.
have some type of system for collecting routine spills and leaks
during handling, and have implemented rigorous employee training
programs.
A substantial number of plants in the semiconductor and elec-
tronic crystal industries have demonstrated that solvent manage-
ment will reduce toxic organic discharges to low concentrations.
This in-process control is effective because the only other
source of toxic organics in the effluent is from the contamina-
tion of process wastewater streams (e.g.. drag out). Available
data show that process streams contribute a very small amount of
toxic organics to the effluent and this amount of toxic organics
is difficult to reduce or eliminate because the concentrations
approximate the level of treatability.
In addition to being relatively inexpensive, especially when com-
pared to more sophisticated end-of-pipe treatment such as carbon
adsorption, solvent management has another advantage. After
plants have collected the spent solvents in tanks or drums for
disposal, they are able to sell the solvents to companies which
purify the used solvents in bulk and then resell these solvents.
(Note: Names of some companies which provide this reclaim
service can be found in the public record for the electrical and
electronic components regulation.) The revenue obtained from the
sale of these solvents generally offsets the costs of collecting
the solvents.
A method of determining the effluent level of toxic organics
achievable using this in-plant control is to identify and sum the
concentration o.f toxic organics from each sourcet1) Below we
have described all the process wastewater sources of toxic
organics from plants in the semiconductor and electronic crystal
industries. These sources are based on data and information
collected from plant personnel and confirmed by observation
during plant visits. Table 7-1 on page 7-10 summarizes the toxic
organic effluent contribution from each source.
At proposal, a slightly different method of determining
the TTO limit was used. The method consisted of graphing all
the effluent TTO data and then examining the graph to locate a
point at which a distinct separation occurred in the magnitude
of the TTO effluent concentrations. This break point was 0.47
mg/ft.. Concentrations falling below the breakpoint reflected
the solvent management practices of the best performing plants.
whereas those above the breakpoint reflected poor solvent
management practices. We assumed that the concentrations below
0.47 mg/ft. reflected the total of all process wastewater
contamination but did not specifically add up the total
contribution of all process wastestreams.
7-6
-------
Acid Wastes -- Acid wastes consist primarily of hydrofluoric acid
and at some plants consist of lesser amounts of hydrochloric and
nitric acids. These are generated from etching and cleaning
steps. This waste stream includes the spent hydrofluoric acid
used directly in etching and may also include the strong or
quench rinses after etching. Some plants segregate this waste
for contractor disposal while other plants treat this in-process
waste stream to control pH and fluoride prior to discharge.
Developer Quench Rinse Developer quench rinse is the water
rinse that follows the photoresist development step.
Dilute Rinses -- Dilute rinses consist of those water rinses
following the first or quench rinse after a process operation.
such as acid etching, photoresist stripping, or solvent clean-
ing. These rinses are usually very low in pollutant concentra-
tions and as a result are recycled to the process at some
plants. Included are rinses following the application of both
negative and positive photoresist.
Equipment Cleaning Wastes Cleaning of process equipment.and
related items takes place at all facilities. The process equip-
ment cleaned includes glassware, bell jars, the stainless steel
or molybdenum masks used in photoresist exposure operations.
shipping containers, and general laboratory equipment. The
cleaning solutions used include acetic, hydrochloric and
fluoboric acids,
freon. hydrogen peroxide, and various proprietary mixtures.
Scrubber Wastes Wet air scrubbers are used at many electronic
crystals and semiconductor facilities to clean the air from
process operations utilizing acids and solvents, laminar benches.
diffusion ovens and from epitaxial growth operations. The
discharges from these scrubbers are frequently high in toxic
organics although the flows generally represent only a small
portion of the total facility effluent.
Stripper Quench Rinses The stripper quench rinse is a
deionized water rinse that immediately follows the photoresist
stripping operation. This quench may contain residual
concentrations of sulfuric acid and hydrogen peroxide (common
constituents of inorganic strippers) and such organics as
tetrachloroethylene and phenol (common constituents of organic
strippers).
Wafer Slicing Wastes -- Although wafer slicing wastes are usually
hauled for disposal due to their high concentratons of solids and
oils, one waste stream generated solely from wafer slicing
operations was analyzed for TTO.
7-7
-------
Wafer Finishing Wastes Plants which produce crystal wafers
generate wastes from, grinding, lapping, and polishing the
wafers. Wafer finishing wastes include associated wafer washes
and rinses.
Carbon Absorption -- Another applicable technology for the
control of toxic organic discharges is end-of-pipe treatment
using carbon adsorption. Frequently used in advanced wastewater
treatment, adsorption is a process in which soluble substances
become chemically or physically bonded to a solid surface. In
operation, wastewater relatively free of suspended matter is
passed through a chamber containing activated carbon which has a
high capacity for adsorbing organic substances from the stream.
Once the capacity of the carbon is exhausted, it must be replaced
or regenerated.
The effectiveness of carbon in removing specific organics varies
and is dependent on molecular weight and polarity of the mole-
cules, and on operating conditions such as contact time, tempera-
ture and carbon surface area. EPA isotherm1 tests have indicated
that activated carbon is very effective in adsorbing 65 percent
of the toxic organic pollutants and is reasonably effective for
another 22 percent. Table 7-2 presents the theoretical
treatability using activated carbon for the 30 toxic organics
found in semiconductor and electronic crystals wastewater.
Most of the 30 toxic organics are theoretically treatable by
activated carbon to 0.05 milligrams per liter. Eight of these
organics have estimated treatabilities of between 0.10 and 1.0
milligrams per liter.
In order to assess the effectiveness of using activated carbon
for removal of toxic organics, the Agency used a model plant
approach. Data from wastewater sampling in'these subcategories
have shown that between five and 15 toxic organics occur in any
particular plant effluent. The estimated lower limit would
consist of a plant having one of the three most difficult
pollutants to treat and four of the organics that can be reduced
to 0.05 mg/8. . An estimated upper limit could be approximated
from a plant having all three of the most difficult pollutants to
treat and the remaining 12 reducable to 0.05 mg/8.. The TTO
effluent concentrations based on these occurrances would range
from 0.7 mg/Jl to 2.1 mg/Jl.
Because this range approximates the TTO effluent level achievable
by solvent management, the use of carbon adsorption would result
in minimal, if any. additional removal of toxic organics beyond
solvent management. While plants could use carbon adsorption to
7-8
-------
achieve approximately the same effluent concentration of toxic
organics as they could using solvent management, carbon adsorp-
tion is unlikely to be used since plants have found solvent
management to be much less expensive, relatively simple to
institute, and approximately as effective in controlling toxic
organic discharges.
7.3 TREATMENT AND CONTROL OPTIONS
For the purpose of establishing effluent limitations and evaluat-
ing the costs of wastewater treatment and control for the
semiconductor and electronic crystal industries the Agency
identified the following six treatment and control options:
Option 1: Neutralization for pH control and solvent
management for control of toxic organics.
Option 2: Option 1 plus end-of-pipe precipitation/clari-
fication for treatment of arsenic, fluoride, and
total suspended solids (TSS).
Option 3: Option 1 plus in-plant treatment (precipita-
tion/clarification) of the concentrated fluoride
stream.
Option 4: Option 2 plus recycle of the treated effluent
stream to further reduce fluoride.
Option 5: Option 2 plus filtration for reduction of
fluoride, arsenic, and suspended solids.
Option 6: Option 5 plus carbon adsorption to reduce toxic
organic concentrations.
7-9
-------
Table 7-1
Process Stream Contribution to Effluent TTO
WasteSource
Acid Wastes
Acid Wastes
Acid Wastes
Acid Wastes
Acid Wastes
Acid Wastes
Acid Wastes
Acid Wastes
Acid Wastes
Stream
ID
3730
M19-2
M19-3
3316
3317
3779
3262
3264
Developer.. Quench Rinse
Developer Rinse
Dilute Rinses
Dilute
Dilute
Dilute
Dilute
Dilute
Dilute
Dilute
Dilute
Dilute
Dilute
Rinses
Rinses
Rinses
Rinses
Rinses
Rinses
Rinses
Rinses
Rinses
Rinses
3647
3719
3721
3723
3668
3672
3674
3483
3486
3489
3765
Equipment Cleaning Wastes
Equipment Cleaning 3837
Equipment Cleaning M19-6
Plant
ID
404
30167
30167
30167
30167
36133
41061
41061
04294
35035
35035
35035
42044
42044
42044
06143
06143
06143
36135
402
30167
TTO
mq/a.
2.208
0.165
0.272
0.0 6;3
0.042
0.091
0.034
0.066
0.085
0.024
0.059
0.059
0.112
0.060
0.079
0.014
0.324
0.030
0.110
<0.010
0.183
Total
Plant
Flow
0.30
12.0
12.0
10.7
10.7
0.12
12.0(D
59.0
52.0
50.7
46.0
47.8
46.5
50.4
47.5
48.4
50.0
15.0
0.8
TTO
Contribution*
0.006
0.020
0.033
0.007
0.004
0.0001
0.004
0.008
0.002
0.014
0.031
0.030
0.052
0.029
0.037
0.007
0.154
0.015
0.055
<0.0015
0.001
The total toxic organic contribution of each process wastewater
stream to the effluent is obtained by multiplying the measured
concentration of TTO by the ratio of the plant reported flow for that
stream to the total plant effluent flow. The units of mg/ft refer to
the effluent concentration of TTO which could be attributed to a
particular wastestream.
7-10
-------
Table 7-1 (Continued)
Process Stream Contribution to Effluent TTO
Waste Source
Scrubber Wastes
Stream
ID
Plant
ID
Scrubber
Scrubber
Scrubber
Scrubber
Scrubber
Scrubber
Scrubber
Scrubber
Scrubber
Wastes
Wastes
Wastes
Wastes
Wastes
Wastes
Wastes
Wastes(3)
Wastes
M16- 2
3474
3250
3718
3482
3485
3488
3733.3734
3732
04296
02347
41061
35035
06143
06143
06143
404
404
Stripper Quench Rinse
Resist strip rinse 3645
Resist strip rinse 3260
Resist strip rinse 3265
Resist strip rinse (4)
Wafer Finishing Wastes
Wafer
Wafer
Wafer
Wafer
Wafer
Wafer
Wafer
Finishing
Finishing
Finishing
Finishing
Finishing
Finishing
Finishing
Wafer Slicing Wastes
Wafer Slicing
M18-2
M19-1
3318
3470
3641
3477
3476
3731
04294
41061
41061
06143
380
30167
30167
301
04294
02040
02040
404
TTO
mq/1
1.868
5.091
0.058
9.086
2.615
2.115
1.415
2.116
0.714
0.021
0.010
6.86
200
2.366
0.250
0.018
1.010
0.095
0.105
0.086
0.237
Total
Plant TTO
Flow Contribution
% mq/g,
2.2(2)
4,7
0.5
1.0
5.9
5.3
5.5
3.8
4.1
1.8
O.06
34.5
1.9
1.1
1.0
34.5
0.5
2.2
0.8
0.
0,
0.041
0.239
0.0003
0.091
154
112
0.078
0.080
0.029
0.0004
0.0002
0.123
0.120
0.816
0.005
0.0002
0.010
0.033
0.005
0.002
0.002
(1) Plants unable to furnish flow data; flow percent assumed equal
to maximum observed at other plants.
(2) Because data were available for only one of four scrubbers at
the plant, its TTO concentration was used and its flow was
multiplied by four.
(3) Flow-proportionally combined discharge from two scrubbers.
(4) Industry data submitted during comment period.
7-11
-------
, TABLE 7-2
TREATABILITY OF TOXIC ORGANICS
USING ACTIVATED CARBON
Treatability
Toxic Pollutant mg/1
6 carbon tetrachloride 0.050
8 1,2,4-trichlorobenzene 0.01
10 1,2-diehloroethane 0.1-1.0
11 2.4,6-trichlorophenol 0.1-1.0
14 1.1,2-trichloroethane 0.1-1.0
21 2,4,6-trichloropheriol 0.025
23 chloroform 0.1-1.0
24 2-chlorophenol 0.050
25 1.2-dichlorobenzene 0.050
26 1,3-dichlorobenzene 0.050
27 1,4-dichlorobenzene 0.025
29 1,1-dichloroethylene : 0.1-1.0
31 2,4-dichlorophenol 0.050
I
37 l,2~diphenylhydrazine 0.050
38 ethylbenzene 0.050
44 methylene chloride 0.1-1.0
48 dichlorobromomethane 0.1-1.0
54 isophorone 0.050
55 naphthalene 0.050
57 2-nitrophenol 0.050
58 4-nitrophenol 0.050
64 pentaehlorophenol 0.010
65 phenol 0.050
66 bis(2-ethyihexyl)phthalate 0.010
67 butyl benzyl phthalate 0.001-0.010
78 di-n-butyl phthalate 0.025
78 anthracene 0.010
85 tetrachloroethylene 0,050
86 toluene 0.050
87 trichloroethylene 0.1-1.0
7-12
-------
SECTION 8
SELECTION OF APPROPRIATE CONTROL AND
TREATMENT TECHNOLOGIES AND BASES FOR
LIMITATIONS
Effluent limitations for the semiconductor subcategory and the
electronic crystals subcategory are presented in this section.
The technology basis and the numerical basis are also presented
for each regulation, in addition to the statistical methodology
used to develop limitations.
8.1 SEMICONDUCTOR SUBCATEGORY
8.1.1 Best Practicable Control Technology Currently Available
(BPT)
TABLE 8-1
BPT EFFLUENT LIMITATIONS
SEMICONDUCTORS
Long-term
Average 30-day
(LTA) Average Daily Maximum
Pollutant (mg/1) VF Limit (mg/1) VF Limit (mg/1)
pH in range 6-9
Total Toxic
Organics * 1.37
* The Agency is not establishing 30-day limitations for reasons
presented below.
BPT limitations are based on Option 1 which consists of neutrali-
zation and solvent management. Solvent management is widely
practiced and will reduce the amount of toxic organics presently
being discharged by approximately '80.000 kilograms per year. For
the facilities which do not practice effective solvent management
already, compliance costs should be minimal as discussed in
Section 9.2. Neutralization is practiced by all facilities
subject to BPT and therefore facilities will not incur additional
costs for compliance as discussed in Sections 7.2.4 and 9.2.
8-1
-------
Option 2 was not selected because, in the semiconductor subcate-
gory. Option 3 can be substituted for and is also less expensive
than Option 2. Fluoride in this industry is primarily generated
from a particular process stream, hydrofluoric acid etching, and
in-plant treatment eliminates the need for end-of-pipe treatment
of all process wastewater as in Option 2. Option 3 was not
selected because it is more appropriately reserved for considera-
tion under BAT. Options 4. 5. and 6 were not selected for the
reasons provided under the BAT discussion.
pH -- Properly operated end-of-pipe neutralization of wastewater
will ensure discharges in the pH range of 6 to 9.
Total Toxic Organics (TTO) As explained below, the Agency is
regulating total toxic organics rather than, individual toxic
oganics. Section 7 presents the effluent contribution of toxic
organics from each process wastewater stream in the semiconductor
and electronic crystal subcategories. In order to explicitly
account for the contribution of each stream, the TTO limit is
derived by summing the TTO- contribution from each stream as shown
in Table 8-2. In cases where we have more than one value for the
TTO contribution, we have used the maximum or worst case contribu-
tion. No single plant exhibited the TTO maximum for each process
stream. Thus, the summation of maximum stream contributions
provides a theoretical "worst case" that does not actually exist.
By basing the limit on the total contribution of all process
wastestreams. EPA has determined that solvent management can
reduce the discharges from other than process contamination to
zero or close to zero. Such a limit is feasible for two reasons:
First, as stated above, the TTO limit is a "worst case" limit.
Therefore, there is some margin for minor releases of TTO from
solvent baths, particularly when commingling with other process
wastestreams is taken into account. Second. EPA has concluded
that solvent management can and does reduce any discharges that
would cause the plant to come into noncompliance. As stated
previously, 53 percent of the plants already meet the limit.
Further, solvent management practices are specifically designed
not only to control deliberate dumping, but also to control spills
and leaks and poor employee work habits that would lead to
violations.
Toxic organics are being regulated as the sum of 30 individual
toxic organics; the sum of this total is referred to as total
toxic organics (TTO). Compounds included in TTO are listed in
Table 6-1. Each of the 30 toxic organic pollutants on the TTO
list was found in the effluent at concentrations greater than 0.01
milligrams per liter from plants in the semiconductor and
8-2
-------
electronic crystal subcategories. The Agency is using 0.01
milligrams per liter as the basis for inclusion because this level
is consistent with the Agency's level of detection for these
pollutants as presented in EPA's proposed Guidelines Establishing
Test Procedures for the Analysis of Pollutants (December 3.
1979). We are not regulating individual compounds because of the
wide range of solvents used and associated concentration ranges.
A 30 day average was not established for TTO primarily because it
is not a treatment system which exhibits occasional wide
variations in performance. In cases where both a daily maximum
and monthly averages exist, the Agency recognizes that the
performance of the treatment system can periodically fluctuate as
a result of variations in the process fl'ow. pollutant loading.
mixing effectiveness, and combinations of these and other
reasons. Thus, monthly averages are often less than the daily
maximum because better performance can be achieved over a longer
period of time. Here, however, the daily and monthly limits would
not be expected to significantly differ because solvent management
does not rely on the operation of a treatment system, but rather
on no dumping and other housekeeping practices as previously
described.
TABLE 8-2
CONTRIBUTION OF TTO FROM
PROCESS WASTEWATER STREAMS TO PLANT EFFLUENT
Stream TTO Effluent *
Wastewater Source ID Contribution*
Acid Wastes M19-3 0.033
Developer Quench Rinse 3647 0.002
Dilute Rinses 3486 0.154
Equipment Cleaning Wastes M19-6 0.001
Stripper Quench Rinse 3265 0.123
Scrubber Wastes 3474 0.239
Wafer Finishing Wastes M18-2 0.816
Wafer Slicing Wastes 3731 0.002
Total Toxic Organics 1.370 rag/1
*The total toxic organic contribution of each process wastewater
stream to the effluent is obtained by multiplying the measured
stream concentration of TTO by the ratio of the plant reported
flow for that stream to the total plant effluent flow. The units
of mg/1 refer to the effluent concentration of TTO which would be
attributed to a particular wastestream.
8-3
-------
8.1.2 Best Available Technology Economically Achievable (BAT)
TABLE 8-3
BAT EFFLUENT LIMITATIONS
SEMICONDUCTORS
(LTA) 30-day Average Daily Maximum
Pollutant (mg/1) VF Limit (mg/1) VF Limit (mg/1)
Total Toxic Organic 1.37
Fluoride 14.5 1.2 17.4 2.2 32
BAT limitations are based .on Option 3. This technology consists
of neutralization and solvent management (Option 1) plus in-plant
precipitation/clarification of the concentrated fluoride stream.
Contract hauling of the concentrated fluoride stream is an accept-
able alternative to treatment as a means of achieving compliance.
Option 4 (Option 1 plus end-of-pipe precipitation/clarification
followed by a recycle of the treated effluent) was not selected
because very few facilities have been able to solve serious
operational problems associated with recycling. Therefore Option
4 is not demonstrated in this industry on a national basis.
However, facilities located in areas which experience water
shortages are encouraged to investigate this technology option.
Option 5 (Option 1 plus end-of-pipe precipitation/clarification
followed by filtration) was not selected because it will only
achieve a three (3) percent increase in fluoride reduction while
at the same time significantly.increasing treatment costs to the
facilities. Option 6 (Option 5 plus carbon adsorption) was not
selected because the vast majority of facilities practicing
effective solvent management would not discharge concentrations of
toxic organics which could be further reduced.
The basis for the total toxic organics (TTO:) limitation was
presented in Section 8.1.1. This limit does not change for BAT.
The basis for fluoride limits is presented below.
Fluoride The long term treated fluoride data on which EPA based
its BAT fluoride limitation was obtained from a plant with
fluoride raw wastes similar in all major respects to fluoride raw
wastes from all plants in the semiconductor and electronic crystal
subcategories. EPA confirmed the similarity of the fluoride raw
8-4
-------
waste from this plant with other plants in these industries by
comparing trip reports from 20 visited plants. A statistical
analysis of daily concentrations of fluoride in the effluent was
conducted to derive the long term average concentration and
variability factors for use in establishing proposed limitations,
The statistical methodology is presented in Section 8.3. Table
8-4 summarizes the analysis of the historical performance data.
TABLE 8-4
HISTORICAL PERFORMANCE DATA ANALYSIS OF
EFFLUENT FLUORIDE WITH HYDROXIDE
PRECIPITATION/CLARIFICATION SYSTEM
Number of Average Variability Factors
Data Points Concentration mg/1 Daily 30-day
281 14.5 2.2 1.2
8.1.3 Best Conventional Pollutant Control Technology (BCT)
TABLE 8-5
BCT EFFLUENT LIMITATIONS
SEMICONDUCTORS
LTA 30-day Average Daily Maximum
Pollutant (mg/1) VF Limit (mg/1) VF Limit
(mg/1)
pH in range 6-9
For BCT the pH limitation is based on the BPT technology, because
BPT achieves the maximum feasible control for pH. Since BPT is
also the minimal level of control required, no possible applica-
tion of the BCT cost test cold result in BCT limitations more
stringent than those promulgated here. There are no other conven-
tional pollutants of concern in the semiconductor subcategory as
discussed in Section 6.
8-5
-------
8.1.4 New Source Performance Standards (NSPS)
TABLE 8-6
NSPS EFFLUENT LIMITATIONS
SEMICONDUCTORS
Pollutant
(rag/1)
LTA
(mg/1)
30-day
Average
VF Limit (mg/1)
Daily Maximum
VF Limit
pH in range 6-
9
Total Toxic Ocganics 1.37
Fluoride
14.5 1.2 17.4 2.2 32
NSPS limitations are based on solvent management, neutralization,
and precipitation/clarification of the concentrated fluoride
stream (Option 3). These technologies are equivalent to BAT for
control of toxic organics and fluoride, and BCT for control of
pH. Other options were not selected for reasons previously
presented under BAT.
NSPS limitations are the same as those for BAT and BPT for pH.
The bases for those limitations were presented in Section 8.1.2.
8.1.5 PretreatmentStandards for New and Existing Sources (PSES
and PSNS)
TABLE 8-7
PSES AND PSNS EFFLUENT LIMITATIONS
SEMICONDUCTORS
30-day
. LTA Ayerage Daily Maximum
Pollutant (mg/1) VF Limit (mg/1) VF Limit (mg/1)
Total Toxic Organics 1.37
8-6
-------
For PSES and PSNS. the Agency is promulgating TTO (total toxic
organics) limitations based on solvent management. Since
biological treatment at well operated POTWs achieving secondary
treatment does not achieve removal equivalent to BAT for TTO.
pass through occurs. Effective solvent management can reduce TTO
by over 99 percent while a POTW will only remove 13 to 97 percent
of these same pollutants. Accordingly. EPA is promulgating PSES
and PSNS based on technology equivalent to BPT/BAT/NSPS for
reduction of TTO.
The Agency is not promulgating pretreatment standards for
fluoride. Fluoride is not a toxic pollutant under the Act and
EPA has more discretion concerning the establishment of
pretreatment standards for such pollutants. In this particular
instance fluoride is not a pollutant of concern for indirect
dischargers, although fluoride does pass through POTWs. The flow
for the semiconductor category is 157.000 gallons per day and the
concentration of fluoride in the wastewater entering the POTW is
65.5 mg/ft. EPA's environmental assessment, based on a
substantial body of scientific literature, shows that there is
little likelihood of health or environmental effects from the
introduction of fluoride at these flows and concentrations into a
POTW. For these reasons, EPA believes it is hot appropriate to
establish nationally applicable categorical pretreatment
standards.
PSES and PSNS limitations are the same as those for BPT/BAT
except that pH is not regulated for pretreatment. The basis for
TTO limitations was presented in Section 8.1.1.
8.2 ELECTRONIC CRYSTALS SUBCATEGORY
Best Practicable Control Technology Currently Available
TABLE 8-8
BPT EFFLUENT LIMITATIONS
ELECTRONIC CRYSTALS
LTA 30-day Average Daily Maximum
Pollutant (mg/1) VF Limit (mg/1) VF Limit (mg/1)
pH in range 6-9
Total Toxic Organics
Arsenic*
Total Suspended
Solids
Fluoride
0
18
14
.51
.2
.2
1.
1.
1.
62
26
2
0.83
23
17.4
4
3
2
.09
.35
.2
1
2
61
32
.37
.09
.0
Arsenic limitations are applicable only to discharges from
gallium arsenide and indium arsenide crystal manufacturing
operations.
8-7
-------
BPT limitations are based on Option 2. This technology consists
of Option 1 (solvent management and end-of-pipe neutralization)
plus end-of-pipe precipitation/clarification. These technologies
control pH. toxic organics. total suspended solids (TSS).
fluoride, and arsenic. With the exception of solvent management.
these treatment technologies have already been installed at all
electronic crystal facilities subject to BPT. For facilities
which do not practice effective solvent management, compliance
costs will be minimal as discussed in Sections 7.2.4 and 9.2.
Arsenic is only being regulated at facilities which manufacture
gallium or indium arsenide crystals. Total toxic organic limita-
tions, rather than limitations on each toxic organic pollutant.
are set for the same reasons explained under BPT for the
semiconductor subcategory.
Option 3 was not selected because this technology is an in-plant
control for only one process stream, hydrofluoric acid etching.
and as such, will not control all wastewater sources of arsenic
and TSS.
Option 4 (Option 1 plus end-of-pipe precipitation/clarification
followed by a recycle of the treated effluent) was not selected
because very few facilities have been able to solve serious
operational problems associated with recycling. Therefore Option
4 is not demonstrated in this industry on a nationwide basis.
However, facilities located in areas which experience water
shortages are encouraged to investigate this technology option.
Option 5 (Option 1 plus end-of-pipe precipitation/clarification
followed by filtration) was not selected for arsenic because the
Agency has no data available to demonstrate or reason to believe
that filtration will further reduce arsenic discharges. This
option was also not selected for fluoride because, as previously
stated under BAT for semiconductors, filtration would only reduce
fluoride by three percent while significantly increasing treatment
costs to the facilities. Option 6 (Option 5 plus carbon
adsorption) was not selected because the vast majority of
facilities practicing solvent management would not discharge
treatable concentrations of toxic organics.
The bases of pH. total toxic organics (TTO) and fluoride
limitations were presented in Section 8.1 for the semiconductor
subcategory. The bases for arsenic and suspended solids
limitations are presented below.
Arsenic -- Only limited data are available from the electronic
crystals subcategory for the treatment of arsenic-bearing wastes.
Therefore, transfer of performance from the non-ferrous metals
industrial category is being used for arsenic limitations.
The rationale for transferring performance from this industry are
(1) the treatment technology used in the non-ferrous metals
industry for reduction of arsenic is the same as that for
8-8
-------
electronic crystals, and (2) the raw waste arsenic concentrations
(1-10 milligrams per liter) found in non-ferrous metals wastewater
compare reasonably with those found in electronic crystals
wastes. Based on engineering judgment, the Agency has determined
that electronic crystals effluent limitations based on non-ferrous
data are achievable.
Monitoring data were submitted from one non-ferrous metals plant
using a lime precipitation/clarification treatment system to
control arsenic discharge, the same technology as Option 2.
Excluded from the data base were data where pH was less than 7.0
or TSS was greater than 50 milligrams per liter: data points where
the treated value was greater than the raw value; and data points
where the raw value was too low to ensure pollutant removal. A
statistical analysis of daily concentrations of arsenic in the
treated effluent was conducted to derive long-term average
concentration and variability factors for use in proposing
limitations. Table 8-9 summarizes the analysis of the monitoring
data.
TABLE 8-9
HISTORICAL PERFORMANCE DATA ANALYSIS OF EFFLUENT ARSENIC
WITH HYDROXIDE PRECIPITATION/CLARIFICATION
Number of Long-Term Variability Factors
Data Points Average Daily 30-Day
111 0.51 4.09 1.62
Total Suspended Solids TSS limitations in Table 8-8 represent a
transfer of performance data from the metal finishing industrial
category. The rationale for transferring performance data from this
industry are (1) the raw waste TSS concentrations are similar to
those found in electronic crystals wastes. (2) the treatment
technology used for solids reduction in the metal finishing industry
is the same as that proposed for electronic crystals. (3) several
electronic crystals facilities also conduct metal finishing
operations, and (4) the use of metal finishing treatment data
provided us with substantially more data as the basis of the TSS
limit. Based on engineering judgment, the Agency has determined
that electronic crystals effluent limitations based on metal
finishing data are achievable.
The average effluent concentration of 18.2 milligrams per liter was
derived from EPA sampling data from numerous metal finishing plants
.practicing solids removal by clarification technology. Excluded
from the data base were effluent TSS concentrations greater than 50
milligrams per liter, since this represents a level above which no
well-operated treatment plant should be operating. The variability
factors of 1.26 and 3.35 each represent the median of variability
factors from 17 metal finishing plants with long-term data.
8-9
-------
8.2.2 Best Available Technology Economically Achievable (BAT)
TABLE 8-10
BAT EFFLUENT LIMITATIONS
ELECTRONIC CRYSTALS
Pollutant
Total Toxic Organics
Arsenic*
Fluoride
LTA
(rag/1)
0.51
14.5
VF
1.62
1.2
30-day
Average
Limit (mg/1)
0.83
17.4
Daily
Maximum
VF Limit (mg/1)
4.09
2.2
1.37
2.09
32
* Arsenic limitations are applicable only to discharges from
, gallium arsenide and indium arsenide crystal manufacturing
operations.
BAT limitations are based on the BPT technology (Option 2).
Option 3 was not selected for the same reason presented above.
Options 4, 5, and 6 were not chosen for reasons explained under
BPT (Section 8.2.1).
The bases for arsenic, fluoride, and.total toxic organics (TTO)
limitations were presented in Section 8.2.1 under BPT. These
limitations do not change for BAT.
8.2.3 Best Conventional Pollutant controlTechnology (BCT)
TABLE 8-11 ;
BCT EFFLUENT LIMITATIONS
ELECTRONIC CRYSTALS
Pollutant
LTA
(mg/1)
30-day
Average
VF Limit (mg/1)
Daily Maximum
VF Limit (mg/1)
pH in range 6-9
Total Suspended Solids 18.2 1.26 23 3.35 61.0
8-10
-------
For BCT, pH. and TSS limitations are based on BPT technology.
For pH, BPT is equal to BCT for the same reason discussed under
the Semiconductor subcategory. For TSS, the Agency considered
the addition of filtration to BPT (Option 5), but rejected this
technology option because of the minimal additional reduction of
total suspended solids. Based on BPT, the average removal of TSS
for each of the six (6) direct dischargers will be approximately
5,400 kilograms per year. Filtration would only increase this
amount by 100 kilograms per year (0.4 kgs/day) or by less than
two percent (2%). Since there is no other technology option
which would remove significant amounts of TSS, the Agency is
setting BCT equal to BPT. Accordingly, there is no need to
conduct the BCT cost test.
8.2.4 .New Source Performance Standards(NSPS)
TABLE 8-12
NSPS EFFLUENT LIMITATIONS
ELECTRONIC CRYSTALS
Pollutant
LTA
(mg/1)
30-day
Average
VF Limit (mg/1)
Daily Maximum
VF Limit (ťg/l)
pH in range 6-9
Total Toxic Organics
Arsenic*
Fluoride
Total Suspended Solids
0.51
14.5
IB, 2
1.62
1.2
1.26
0.83
17.4
23
4.09
2.2
3.35
1.37
2.09
32
61.0
* Arsenic limitations are applicable only to discharges from
gallium arsenide and indium arsenide crystal manufacturing
operations.
NSPS limitations are based on solvent management, neutralization,
and end-of-pipe precipitation/clarification. These technologies
are equivalent to BAT for toxic pollutants and fluoride, and are
equivalent to BPT/BCT for conventional pollutants. Other options
were not selected for reasons presented under BAT.
NSPS effluent limitations for electronic crystals producers are
the same as BPT/BAT for toxic pollutants and fluoride and BPT/BCT
for pH and suspended solids. The bases for those limitations are
presented in Sections 8.2.1 and 8.2.3.
8-11
-------
8.2.5 Pretreatment Standards for New and Existing Sources
(PSNS and PSES)
TABLE 8-13
PSES AND PSNS EFFLUENT LIMITATIONS
ELECTRONIC CRYSTALS
Pollutant
Total Toxic Organics
Arsenic*
LTA
(mg/1)
0.51
30-day Average
VF Limit (mg/1)
1.62 0.83
Daily Maximum
VF Limit (mg/1)
1.37
4.09 2.09
* Arsenic limitations are applicable only to discharges from
gallium arsenide and indium arsenide crystal manufacturing
operations.
Both TTO and arsenic will be removed to a greater extent by BAT
than by biological treatment at well operated POTWs achieving
secondary treatment. Effective solvent management can reduce TTO
by over 99 percent while a POTW will remove 13 to 97 percent of
these same pollutants. Similarly, precipitation/clarification of
arsenic will remove over 92 percent of this pollutant while a
POTW will only remove 35 percent. Therefore. PSES and PSNS are
required to prevent pass through. For PSES; and PSNS. EPA is
promulgating limitations based on solvent management.
neutralization, and end-of-pipe precipitation/clarification
(Option 2) for the facilities which manufacture gallium or indium
arsenide crystals. For facilities which only manufacture other
types of crystals, PSES and PSNS are based on solvent management
(Option 1). Option 2 will assure control of arsenic in addition
to controlling.toxic organics.
The Agency is not promulgating pretreatment standards for
fluoride. Fluoride is not a toxic pollutant under the Act and
EPA has more discretion concerning the establishment of
pretreatment standards for such pollutants. In this particular
instance fluoride is not a pollutant of concern for indirect
dischargers. The flow for the electronic crystals subcategory is
29.000 gallons per day and the concentration of fluoride in the
wastewater entering the POTW is 129 rug/9.. EPA's environmental
assessment, based on a substantial body of scientific literature,
shows that there is little likelihood of health or environmental
effects from the introduction of fluoride at these flows and
concentrations into a POTW. For these reasons, EPA believes it
is not appropriate to establish nationally applicable categorical
pretreatment standards.
8-12
-------
PSES and PSNS limitations for electronic crystals producers are
the same as those for BPT except that pH and TSS are not
regulated for pretreatment. The bases for limitations were
presented in Section 8.2.1.
8.3 STATISTICAL ANALYSIS
Statistical analysis of discharge monitoring data allows a
quantitative assessment of the variability of effluent concentra-
tions following wastewater treatment. Long term data, collected
on a daily basis, reflect the fact that even properly operating
treatment systems experience fluctuations in pollutant concentra-
tions discharged. These fluctuations result from variations in
process flow, raw waste loading of pollutants, treatment chemical
feed, mixing effectiveness during treatment, and combinations of
these or other factors.
It is found that the day-to-day variability in effluent concen-
trations includes occasional large changes while averages for
each month's data experience smaller fluctuations. The vari-
ability in the monthly average is usually found to be well
described by the normal distribution, with values evenly distrib-
uted around the mean. However, daily fluctuations are most often
described by a lognormal or asymmetric distribution. This
reflects the fact that an effluent value may rise considerably
from the mean level, but may fall only to the value of zero.
In the development of effluent limitations and standards, allow-
ance for the variation in the effluent concentration of a pollu-
tant is accounted for by the establishment of a variability
factor which is always greater than 1.0. This factor, calculated
based on the type of distribution of daily or monthly average
concentrations, is then multiplied by the mean pollutant concen-
tration to yield a performance standard or effluent limitation
that is reasonable for a particular treatment technology and a
particular type of waste.
The following paragraphs describe the statistical methodology
used to calculate the variability factors and to establish
limitations for pollutant concentrations.
8.3.1 Calculation of Variability Factors
Variability factors are used to account for effluent concentra-
tion fluctuations in the establishment of reasonable effluent
limitations. Calculation of these factors is discussed here.
while their application is discussed under the next heading.
Daily Pollutant Level Measurements These calculations were
based on the following three assumptions: (1) the daily
8-13
-------
pollutant concentration data are lognormally distributed; (2)
monitoring was conducted in a responsible fashion, such that the
resulting measurements can be considered statistically
independent and amenable to standard statistical procedures; (3)
treatment facilities and monitoring techniques were substantially
constant throughout the monitoring period. The lognormality
assumption is well established for daily sampling and has been
demonstrated in the analysis of effluent samples from many
industries. The other two assumptions, which concern
self-consistency of the data, were supported by direct
examination of the data and by consideration of supplemental
information accompanying the data.
The variability factor is especially useful with lognormally dis-
tributed pollutant levels because its value is independent of the
long-term average, and depends only upon the day-to-day
variability of the treatment process and the expected number of
unusually high discharge periods. For a lognormal population the
variability factor (P/A). the performance standard P. and the
long-term average A, are related by
In (P/A) = S1(Z - S'/2)
where In represents the natural logarithm, S' is the estimated
standard deviation of the natural logarithms of pollutant con-
centrations, and Z is a factor derived from the standard normal
distribution.
The value of Z selected for the calculation of daily performance
standards is 2.326, which corresponds to the 99th percentile of
the lognormal distribution. Thus only one percent pollutant
concentrations is expected greater than the performance standard
P. This assumes the continued proper operation of the wastewater
treatment procedures, and is equivalent to allowing a plant in
normal operation 3 or 4 exceedances per year.
To estimate the variability factor for a particular set of
monitoring data, where the method of moments is used. S' is
calculated as the square root of In (1.0 + (CV2)). Here CV is
the sample coefficient of variation, and is the ratio of sample
standard deviation to sample mean.
30-Day Averages of Pollutant Levels While individual pollutant
concentrations are assumed to be lognormally distributed, 30-day
averages are not assumed to fit this model. Instead, the
statistical "Central Limit Theorem" provides justification for
using the normal distribution as the appropriate model. Thus the
30-day average values are expected to behave approximately as
random data from a normal distribution, with mean A and standard
deviation S''.
8-14
-------
For any probability (k percent) that a particular monthly average
will not exceed the performance standard P. there corresponds a
value Z such that
P = A + Z (S1')
The variability factor is
P/A = 1.0 + Z(S''/A)
and is estimated by
P/A = 1.0 + Z(CV)
In this equation. Z is frequently given the value of 1.64. to
correspond with a probability, k. of 95 percent that a monthly
average is within guidelines. CV is the estimated coefficient of
variation of the 30-day averages. It may be computed by Sx/A.
where S is the standard deviation of sample measurements and x is
the mean of sample measurements.
Hence one obtains the performance standard P by multiplying the
mean of the 30-day averages by the variability factor. An inter-
pretation is that for the selected value of Z =.1.64 correspond-
ing to the 95th percentile of a normal distribution. 19 of every
20 30-day averages will not exceed P.
8.3.2 Calculation of Effluent Limitations
The effluent limitations are based on the premise that a plant's
treatment system can be operated to maintain average (mean)
effluent concentrations equal to those determined from the
sampled data from visited plants. As explained in the introduc-
tion, the day-to-day concentrations will fluctuate below and
above these average concentrations. Thus the effluent daily
limitations must be set far enough above the average daily
concentrations that plants with properly operated treatment
systems will not exceed them (99 percent of the time), and the
30-day average limitations must be set sufficiently above the
mean of 30-day averages so that no more than 5 percent of 30-day
averages will exceed the limitations, again assuming a properly
operated treatment system. The effluent limitations were
obtained for each parameter by multiplying the average concentra-
tion (based on visit data) by the appropriate daily and 30-day
variability factors (based on historical data) to obtain the
effluent limitations. Expressed as equations.
Daily maximum limitation = VFD x A
30-day average limitation = VF3Q x A
In these equations, VFjj is the daily maximum variability
factor, VF30 is the 30-day average variability factor, and A is
the average concentration based on plant visit data.
8-15
-------
SECTION 9
COST OF WASTEWATER TREATMENT AND CONTROL
This section presents estimates of the costs of implementation of
wastewater treatment and control systems for the Semiconductor
and Electronic Crystals subcategories of the Electrical and
Electronic Components category. The systems for which cost
estimates are presented are those options selected by the Agency
as the technical bases for discharge regulations as presented in
Section 8. The cost estimates then provide the basis for
probable economic impact of regulation on the industry.
The general approach or methodology for cost estimating is
presented below followed by the treatment and control option
costs. Finally, this section addresses non-water quality aspects
of wastewater treatment and control including air pollution.
noise pollution, solid wastes and energy considerations.
9.1 COST ESTIMATING METHODOLOGY
Costs involved in setting up and operating a wastewater treatment
unit are comprised of investment costs for construction, equip-
ment, engineering design, and land, and operating costs for
energy, labor, and chemicals. There are also costs for disposing
of sludge and for routine analysis of the treated effluent.
The costs presented in this section are based on model plants
which closely resemble the types and capacities of waste
treatment facilities needed for each product subcategory. Model
plants are not set up as exemplary plants, but as typical of
sufficient design to represent the range of plants and treatment
facilities present in the industry. Data are based on plant
visits and contacts with industries to verify treatment practices
and to obtain data on size, wastewater flow, and solid waste
disposal systems. The differences in treatment capacities are
reflected in the choice of model plants which are presented for
different flow rates covering the existing range of flows at
average concentrations of pollutants.
Unit process equipment costs were assembled from vendors and
other commercial sources. Information on the costs of equipment.
the present costs of chemicals and average costs for hauling
sludge was developed with data from industry, engineering firms.
and equipment suppliers. Appropriate factors were applied to
determine total investment costs and annual costs.
9-1
-------
The costs which will actually be incurred by an individual plant
may be more or less than presented in the cost estimate. The
major variations in treatment costs between plants result from
differences in pollutant concentrations and site dependent
conditions, as reflected in piping lengths, climate, land
availability, water and power supply, and the location of the
point of final discharge. In addition, solids disposal costs and
material costs will vary depending on geographical locations.
The following assumptions were employed in the cost development:
1. All non-contact cooling water was excluded from
treatment and treatment costs. This source of
wastewater is not covered by these regulations.
2. Source water treatment, cooling tower and boiler
blowdown discharges were not considered process
wastewater.
3. Sanitary sewage flow is excluded.
4. The treatment facilities were assumed to operate 8
hrs/per day, 260 days per year for small plants (below
60.000 GPD); 24 hrs/day, 260 days per year for medium-
sized plants (60.000 GPD to 200,000 GPD); and 24
hrs/day 350 days per year for large plants (greater
than 200,000 GPD). Treatment facilities operations are
based on industry provided data.
.-
5. Excluded from the estimates were any costs associated
with permits, reports, or hearings required by
regulatory agencies.
Investment costs are expressed in end of year 1979 dollars to
construct facilities at various wastewater flow rates. Opera-
tion, maintenance, and amortization of the investment are
expressed as base level annual costs.
9.1.1 Direct Investment Costs for Land and Facilities
Types of direct investment costs for waste treatment facilities
and criteria for estimating major components of the model plants
are presented below.
Construction Costs Construction costs include site
preparation, grading, enclosures, buildings, foundations.
earthworks, roads, paving, and concrete. Since few if any
buildings will be utilized, construction costs have been
9-2
-------
calculated using a factor of 1.15 applied to the installed
equipment cost or 2.0 applied to the equipment cost.
Equipment Cost Equipment for wastewater treatment consists of
a combination of items such as pumps, chemical feed systems.
agitators, flocculant feed systems, tanks, clarifiers and
thickeners. Cost tables for these items were developed from
vendor's quotations for a range of sizes, capacities, and motor
horsepowers. Except for large size tanks and chemical storage
bins, the cost represents packaged, factory-assembled units.
Critical equipment is assumed to be installed in a weatherproof
structure. Chemical storage feeders and feedback controls
include such items as probes, transmitters, valves, dust filters,
and accessories. Critical pumps are furnished in duplicate as a
duty and a spare each capable of handling the entire flow.
Installation Costs Installation is. defined to include all
services, activities, and miscellaneous material necessary to
implement the described wastewater treatment and control system,
including piping, fittings, and electrical work. Many factors
can impact the cost of installing equipment modules. These
include wage rates, manpower availability, who does the job
(outside contractor or regular employees), new construction
versus modification of existing systems, and site-dependent
conditions (e.g.. the availability of sufficient electrical
service). In these estimates, installation costs were chosen for
each model based upon average site conditions taking into
consideration the complexity of the system being installed. An
appropriate cost is allowed for interconnecting piping, power
circuits and controls.
Monitoring Equipment Monitoring equipment will be installed at
the treated effluent discharge point. It will consist of an
indicating, integrating, and recording type flow meter. pH meter,
sensor, recorder, alarms, controls, and an automatic sampler.
This equipment will be used for the purpose of operating the
treatment system as well as complying with discharge requirements
Land Land availability and cost of land can vary signifi-
ficantly, depending upon geographical location, degree of
urbanization and the nature of adjacent development. Land for
waste treatment is assumed to be contiguous with the production
plant site. For the purpose of the report land is valued at
$12,000 per acre.
Investment Costs for Supporting Services Engineering design
and inspection are typical services necessary to advance a
project from a concept to an operating system. Such services
broadly include laboratory and pilot plant work to establish
9-3
-------
design parameters, site surveys to fix elevation and plant
layout, foundation and groundwater investigation, and operating
instructions, in addition to design plans, specifications and
inspection during construction. These costs, which vary with job
conditions, are often estimated as percentages of construction
costs, with typical ranges as follows:
Preliminary survey and construction surveying 1 to 2%
Soils and groundwater investigation 1 to 2%
Laboratory and pilot process work 2 to 4%
Engineering design and specifications 7 to 12%
Inspection during construction 2 to 3%
Operation and maintenance manual 1 to 3%
TOTAL 14 to 26%
From these totals of 14 to 26 percent, a mid-value of 20 percent
of in-place construction (installed equipment and construction)
cost has been used in this study to represent the engineering and
design cost applied to model plant cost estimates.
The contractor's fee and contingency, usually expressed as a
percentage of in-place construction cost, includes such general
items as temporary utilities, small tools, field office overhead
and administrative expense. The contractor is entitled to a
reasonable profit on his activities and to the cosjt of interest
on capital tied up during construction. Although not all of the
above cost will be incurred on every job, an additional 50
percent of the in-place construction cost has been used to cover
related cost broadly described as contractor's fees, incidentals.
overhead, and contingencies.
9.1.2 Annual Costs
Operation and Maintenance Costs Annual operation and
maintenance costs are described and calculated as follows:
Labor and Supervision Costs:
Personnel costs are based on an hourly rate of $20.00. This
includes fringe benefits and an allocated portion of costs for
management, administration, and supervision. Personnel are
assigned for specific activities as required by the complexity of
the system, ranging from 1-8 hours per day.
Energy Costs:
Energy costs are based on the cost of $306.00 per horsepower
operating 24 hours per day and 3SO days per year. For batch
processes appropriate adjustments were made to suit the
9-4
-------
production schedule. The cost per horsepower year is computed as
follows:
Cy = 1.1 (0.745 HP x Hr. x Ckw)/(E x P)
where Cy = Cost per year
HP = Total Horsepower Rating of Motor (1 HP = 0.7457 kw)
E = Efficiency Factor (0.9)
P = Power Factor (1.00)
Hr. = Annual Operating Hours (350 x 24 = 8,400)
Ckw = Cost per Kilowatt- Hour of Electricity ($0.040)
Note: The 1.1 factor in the equation represents allowance for
incidental energy used such as lighting, etc. It is assumed that
no other forms of energy are used in the waste treatment system.
Chemicals:
Prices for the chemicals were obtained from vendors and the
Chemical Marketing Reporter. Unit costs of common chemicals
delivered to the plant site are based on commercial grade of the
strength or active ingredient percentage with prices as follows:
Hydrated Lime (Calcium Hydroxide) Bulk $80/ton
Flocculant $ 2/lb
Maintenance:
The annual cost of maintenance is estimated as ten percent (10%)
of the investment cost, excluding land.
Taxes and Insurance:
An annual provision of three percent of the total investment cost
has been included for taxes and insurance.
Residual Waste Disposal:
Sludge disposal costs can vary widely. Chief cost determinants
include the amount and type of waste. Off-site hauling and
disposal costs are taken as $20/YD3 for bulk hauling, with
appropriate increases for small quantities in steel containers.
Information available to the Agency indicates that the selected
treatment technologies for controlling pollutants in this
industry will not result in hazardous wastes as defined by RCRA.
(Solvents collected by solvent management will be subject to
RCRA; see Section 9.2.1 and Table 9-3 for EPA's discussion of
these costs.)
9-5
-------
Monitoring, Analysis, and Reporting
The manpower requirements covered by the annual labor and
supervision costs include those activities associated with the
operation and maintenance of monitoring instruments, recorder,
and automatic samplers as well as the taking of periodic grab
samples. Additional costs for analytical laboratory services
haŤre been estimated for each subcategory assuming that sampling
takes place three times a week at the point of discharge. A cost
of $7,500/year has been used for monitoring analyses and
reporting for Option 2 and 3.
Amortization Amortization of capital costs (investment costs)
are computed as follows:
CA = B (r(l+r)n)/((l+r)n-l)
where CA = Annual Cost
B = Initial amount invested excluding cost of land
r = Annual interest rate (assumed 13 percent)
n = Useful life in years
The multiplier for B in equation (1) is often referred to as the
capital recovery factor and is 0.2843 for the assumed overall
useful life of 5 years. No residual or sludge value is assumed.
9.1.3 Items Not Included In Cost Estimate
Although specific plants may encounter extremes of climate, flood
hazards and lack of water, the cost of model plants have been
estimated for average conditions of temperature, drainage, and
natural resources. It is assumed that any necessary site
drainage, roads, water development, security, environmental
studies and permit costs are already included in production
facilities costs. Therefore, the model costs are only for
facilities, suppliers, and services directly related to the
treatment and disposal of waterborne wastes, including land
needed for treatment and on-site sludge disposal. Air pollution
control equipment is not included, except for dust collectors
associated with treatment, chemical transfer and feeding. Raw
wastes from various sources are assumed to be delivered to the
treatment facility at sufficient head to fill the influent
equalization basin, and final effluent is discharged by gravity.
Cost of pumps, pipes, lines, etc., necessary to deliver raw
wastewater to the treatment plant or to deliver the treated
effluent to the point of discharge are not included in the cost
estimates.
9-6
-------
9.2 COST ESTIMATES FOR TREATMENT AND CONTROL OPTIONS
Table 9-1 summarizes the treatment and control options selected
as the bases for effluent limitations and standards for the
semiconductor and electronic crystals subcategories.
TABLE 9-1. TREATMENT AND CONTROL OPTIONS
SELECTED AS BASES FOR
EFFLUENT LIMITATIONS
Subcategory BPT BAT BCT/NSPS Pretreatment
Semiconductors 1 313 1
Electronic Crystals 2 2 22 1+2
9.2.1 Option 1
This treatment option consists of neutralization of the plant
discharge and solvent management to control toxic organics.
Since all direct dischargers in both the semiconductor and
electronic crystals subcategories currently neutralize their
discharges, no costs of neutralization will be incurred by the
industry. Costs associated with Option 1 result from the
collection of additional solvents and monitoring. These costs
are explained below.
Many plants already meet the TTO limit. Those plants that are
not already in compliance will have to improve the effectiveness
of their solvent management program. EPA has assumed the real
costs of compliance for such plants are minimal. Primarily, this
is because the costs are small increments above existing costs.
That is. a discharger who is currently handling and disposing
solvents contained in drums or tanks may have some additional
amounts of solvents to deal with. He already would have incurred
the basic costs of setting up such systems. However, to the
extent that there may be incremental costs they would be offset
by the resale value of the additional solvents. Data in the
record show that resale of spent solvents is commonly practiced.
For monitoring. EPA has estimated the annual costs for 47 percent
of the plants to conduct quarterly monitoring. It is difficult
to predict precisely how many plants will take advantage of the
certification alternative to monitoring, although we expect most
plants will want to do so. For purposes of costing, based upon
our estimate that 53 percent of existing plants already meet the
toxic organic limit, we are assuming the same percentage, at a
minimum, will also choose to certify. While it is difficult to
estimate monitoring frequency for total toxic organics in the
9-7
-------
absence of significant historical experience, based on a survey
of state and regional permitting authorities, we estimate that.
on average, monitoring for TTO will be required once per
quarter. The costs for quarterly monitoring are presented in
Table 9-2.
In some cases plants may be required to monitor as frequently as
once a month. Thus. EPA has done an economic sensitivity
analysis to assess the impact of monthly monitoring costs as part
of its economic impact analysis. The capital and annual costs of
both quarterly and monthly monitoring for TTO. in 1983 dollars.
are presented in Table 9-2.
EPA has also performed an economic sensitivity analysis for RCRA
costs. As stated above. EPA believes that minimal costs are
associated with TTO compliance. Nevertheless. EPA has costed out
and assessed the economic impact if plants presently not in
compliance sent the additional solvents to hazardous waste
disposal facilities covered by the Resource Conservation and
Recovery Act. These costs represent the worst case compliance
costs associated with solvent management. They are presented in
1983 dollars in Table 9-3.
9.2.2 Option 2
The capital and annual costs of adding this end-of-pipe
precipitation/clarification system to Option 1 treatment are
presented in Table 9-4. The range of model plant wastewater
flows reflect the range of flows that currently exist for the
subcategory. Figure 9-1 graphically presents the annual costs
versus plant wastewater flow for this option. The costs are
incremental and therefore .only reflect the additional costs of
adding end-of-pipe precipitation/clarification technology to
Option 1 technology.
9.2.3 Option 3
The capital and annual costs of adding this in-plsint precipita-
tion/clarification treatment system for fluoride acid wastes to
Option 1 treatment are presented in Table 9-5. The range of
model plant waste flows reflect the range of flows for this
stream as they currently exist in both subcategories. Figure 9-2
graphically presents the annual costs versus waste stream flow
for this option. The costs are incremental and therefore only
reflect the additional costs of adding in-plant precipitation/
clarification technology to Option 1 technology.
9.2.4 Option 5
The capital and annual costs of adding filtration to end-of-pipe
precipitation/clarification (Option 2) are presented in Table
9-8
-------
9-6. These costs are incremental and therefore only reflect the
additional costs of adding filtration technology to Option 2
technology.
9.3 ENERGY AND NON-WATER QUALITY ASPECTS
Compliance with the proposed regulations will have no effect on
air. noise, or radiation pollution and will only result in
minimal energy usage. The amount of solid waste generated will
be 7.700 metric tons per year. Available information indicates
that the solid waste generated will not be hazardous as defined
in the Resource Conservation and Recovery Act (RCRA). Energy
requirements associated with these regulations will be 100.000
kilowatt-hours per year or only 7.5 kilowatt-hours per day per
facility.
Based on the absence of any significant non-water quality impacts
from these regulations, EPA has concluded that the regulations
best serve overall national environmental goals.
9-9
-------
TABLE 9-2
PLANT MONITORING COSTS
FOB ORGAN ICS CD
INVESTMENT COSTS
Automatic Sampler - Complete $ 2.500 $ 2.500
TOTAL INVESTMENT COST $ 2,500 $ 2.500
ANNUAL COSTS Quarterly Monthly
Analysis Cost $ 860 $ 3.440 $ 10.320
Sample kit $ 50 200 600
Sampling personnel
@ $22/hr x 8 hrs/eplsode $ 176 704 $ 2,112
TOTAL OPERATION AND
MAINTENANCE COST $ 4,344 $ 13.032
AMORTIZATION OF
INVESTMENT COST 711 711
TOTAL ANNUAL COST $ 5.055 $ 13.743
(1) 1983 Dollars
9-10
-------
TABLE 9-3
INCREMENTAL COST OF SOLVENT DISPOSAL IN ACCORDANCE WITH RCRA
OPTION 1
Plant Number
(ť
(2
(3
02040
02347
04294
04296
06143
35035
41061
304
404
308
Number of
Gal/ 90 Days^1) 55 gal drums
193.4
1921
798
12,4
85.7<Ť>
15.7(3)
210.8
190.4
72.8
69.7
) Based on a 24 hour/production day
and days per year.
} Disposal cost is based on a 1983
) 3-day sampling average.
4
35
15
1
2
1
4
4
2
Disposal Transportation Total Qrtly
Cost ($) Cost ($) Cost ($)
400
3500
1500
100
200
100
400
400
200
2 200
, 250 days production per year
estimate from an EPA-approved
200
200
200
200
200
200
200
200
200
200
; however
disposal
600
3700
1700
300
400
300
600
600
400
400
, some plants operate
facility.
Total Year
Cost ($} (2)
2400
14800
6800
1200
1600
1200
2400
2400
1600
1600
less hours per day.
-------
TABLE 9-4
MODEL PLANf TREATMENT COSTS
OPTION 2
Flow, gpd (1/da.y)
A. INVESTMENT COSTS
Construction
Equipment in place
including piping,
fittings, electrical
work and controls
Monitoring equipment
in place
Engineering design
and inspection
Incidentals, overhead,
fees, contingencies
Land
TOTAL INVESTMENT COST
B. OPERATION AND
MAINTENANCE COST
Labor and supervision
Energy
Chemicals
Maintenance
Taxes and insurance
Residual waste
disposal
Monitoring, analysis
and reporting
TOTAL OPERATION AND
MAINTENANCE COST
C. AMORTIZATION OF
INVESTMENT COST
TOTAL ANNUAL COST
2,000
(7,570)
$ 2,500
28,000
6,000
6,500
15,500
3,000
$61,500
11,000
600
200
6,000
2,000
1,500
7,500
$28.800
16,632
$45.432
10,000
(37,850)
$ 7,000
83,000
6,000
18,000
45,000
3,000
$162,000
11,000
1,000
1,100
16,000
5,000
8,500
7,500
$50.100
45,206
$95.306
60,000
(227,000)
$ 12,000
142,000
6,000
31,000
77,000
6,000
$274,000
11,000
5,000
4,000
27,500
8,500
52,000
7,500
$115,500
76,196
$191.696
150,000
(568,000)
$ 17,000
202,500
6,000
44,000
110,000
6,000
$385.500
11,000
6,000
9,500
38,000
12,000
108,000
7,500
$192,000
107,897
$399.897
200,000
(757,000)
$ 20,200
244,600
6,000
53,000
132,500
6,000
$462.300
11,000
7,000
12,500
46,000
13,800
128,500
7,500
$226.300
129,733
$356.033
9-12
-------
-g
_g
* Ł
si ":
* >
<
SS
<
(OOCTOIS) 1503 IVflNNV
9-13
-------
TABLE 9-5
MODEL PLANf TREATMEMT COSTS
OPTION 3
Fluoride Stream Flow, gpd (I/day)
A. INVESTMENT COSTS
Construction
Equipment in place
including piping,
fittings, electrical
work and controls
Monitoring equipment
in place
Engineering design
and inspection
Incidentals, overhead,
fees, contingencies
Land
TOTAL INVESTMENT COST
B. OPERATION AND
MAINTENANCE COST
Labor and supervision
Energy
Chemicals
Maintenance
Taxes and insurance
Residual waste
disposal
Monitoring, analysis
and reporting
TOTAL OPERATION AND
MAINTENANCE COST
C, AMORTIZATION OF
INVESTMENT COST
TOTAL ANNUAL COST
100
(378)
$ 3,300
40,600
0
8,800
8,800
0
$61.500
5,000
50
200
3,100
1,900
700
1,200
$12,150
17,500
$29,650
500
(1,890)
$ 3,300
40,600
0
8,800
8,800
0
$ 61.500
20,000
200
1,000
3,100
1,900
3,500
1,200
$30,900
17,500
$48.400
2,500
(9,460)
$ 5,500
67,200
0
14,500
14,500
0
1101.700
20,000
350
5,000
5,100
3,050
17 , 500
1,200
$52.200
28,900
$81.100
6,000
(22,700)
$ 10,100
121,900
0
19,800
26,400
0
$178.200
20,000
700
12,000
8,900
5,300
42,000
1,200
$90.100
50,700
$140.800
9-14
-------
I 1 I
e
z
x
o
LU
ee
Z
e
e
oc
e
ec
a
a
t_5
Z
O
e
o
i
<
z
z
<
en
UJ
ec
a
C9
1 I I
o o o
O ee IB
(000LS) 1SOO
9-15
-------
fABLE 9-6
MODEL PLANT TREATMENT COSTS
OPTION 5, INCREMENTAL COSTS
A. INVESTMENT COSTS
Construction
Equipment in place
including piping,
fittings, electrical
work and controls
Monitoring equipment
in place
Engineering design
and inspection
Incidentals, overhead,
fees, contingencies
Land
TOTAL INVESTMENT COST
B. OPERATION AND
MAINTENANCE COST
Labor and supervision
Energy
Chemicals
Maintenance
Taxes and insurance
Residual waste
disposal
Monitoring, analysis
and reporting
TOTAL OPERATION AND
MAINTENANCE COST
C. AMORTIZATION OF
INVESTMENT COST
TOTAL ANNUAL COST
2,000
(7,570)
$ 700
6,700
1,500
3,700
$12.600
2,000
300
1,260
380
Flow, gpd (I/day)
10,000 60,000 150,000
(37,850) (227,000) (568,000)
$ 800 $ 1,600
7,900
16,000
$ 3,300
33,000
1,700
4,400
.4,800
2,000
500
1,480
440
3,500
8,800
129 . 90Q
3,000
2,500
3,000
900
7,200
18,200
$61,700
4,000
3,000
6,200
1,850
$15.050
3,580 4,210 8,500 17,540
E7.520 $8.630 $17.900 $32.590
200,000
(757,000)
$ 3,800
38,000
8,400
20,900
$71.100
4,000
3,500
7,100
2,130
$16.730
20,210
$36.940
9-16
-------
SECTION 10
ACKNOWLEDGMENTS
The Environmental Protection Agency was aided in the preparation of
this Development Document by Versar Inc. and Jacobs Engineering
Group, Inc. Versar's effort was managed by Mr. Lawrence G. Davies.
with the assistance of Ms. Jean Moore. Jacob's effort was managed
by Ms. Bonnie Parrott. with the assistance of Mr. Bob Mueller.
Mr. Richard Kinch served as Project Officer and Mr. David Pepson
served as the Technical Project Officer during the preparation of
this document. Mr. Jeffrey Denit. Acting Director, Effluent
Guidelines Division, and Mr. Gary E. Stigall, Branch Chief, Effluent
Guidelines Division. Inorganic Chemicals Branch, offered guidance
and suggestions during this project.
10-1
-------
SECTION 11
REFERENCES
1. Amick. Charles L.. Fluorescent Lighting Manual. McGraw-Hill.
3rd. ed.. (1961).
2. Baumann. E.R.. Diatomite Filtration of Potable Water.
American Water Works Association, Inc.
3. Beau. R.L. et al.. Transformers for the Electric Power
Industry. McGraw-Hill (1959).
4. Bogle. W.S.. Device Development, The Western Electric
Engineer, (July 1973).
5. Burock. R. et al.. Manufacturing Beam Lead. Insulated Gate.
Field Effect Transistor Integrated Circuits. Bell
Laboratories Record. (Jan. 1975).
6. Cockrell. W.D.. Industrial Electronics Handbook. McGraw-Hill
(1958).
7. Culver. R.H.. Diatomaceous Earth Filtration. Chemical
Engineering. Vol. 17. No. 12 (Dec. 1975).
8. Elenbaas, W.. Fluorescent Lamps and Lighting. (1959).
9. EPA. Final Rule Polychlorinated Biphenvls Manufacturing.
Processing. Distribution in Commerce, and Use Prohibition.
Federal Register. (May 31. 1979). Part IV.
10. EPA. Support Document/Voluntary Environmental Impact
Statement and PCS Ban Economic Impact Analysis. EPA Office of
Toxic Substances Report. (April. 1979).
11. Forsythe. William E.. Fluorescent and Other Gaseous Discharge
Lamps. (1948).
12. Funer. R.E.. Letter to Robert Schaeffer. EPA Effluent
Guidelines Div., E.I. DuPont de Nemours and Company.
Subject: Priority pollutant removal from wastewater by the
PACT process at the Chambers Works.
13. Gerstenberg, D. and J. Klerer. Anodic Tantalum Oxide
Capacitors From Reactively Sputtered Tantalum. 1967
Proceedings, Electronic Components Conference, Sponsored by
IEEE, EIA.
11-1
-------
14. Gray. H.J.. Dictionary of Physics. Longmans. Green and Co..
London (1958).
15. Henney. K. and C. Walsh. Eds.. Electronic Components
Handbook. McGraw-Hill (1975).
16. Hewitt. Harry. Lamps and Lighting. American Elsevier
Publishing Co.. (1966).
17. Hiyama. S. et al.. 3500 uFV Wound-Foil Type Aluminum Solid
Electrolytic Capacitors. 1968 Proceedings. Electronic
Components Symposium, Sponsored by IEEE, EIA.
18. IBM. S/C Manufacturing Overview. IBM. East Fishkill. N.Y.
19. IEEE Standards Committee, IEEE. Standard Dictionary of
Electrical and Electronic Terms. J. Wiley and Sons, (Oct.
1971).
20. Illuminating Engineering Society, IBS Lighting Handbook. 3rd
ed.. (1962).
21. Jowett, C.E.. Electronic Engineering Processes. Business
Books. Ltd.. (1972).
22. Kirk and Othmer. Encyclopedia of Chemical Technology. Vol.
17. McGraw-Hill. (1968).
23. Knowlton, A.E.. Standard Handbook for Electrical Engineers.
McGraw-Hill. (1957).
24. McGraw-Hill, Dictionary of Scientific and Technical Terms.
2nd Ed.. McGraw-Hill (1978).
25. McGraw-Hill. Encyclopedia of Science and Technology.
McGraw-Hill (1960).
26. Mclndoe. R.W.. Diatoroite Filter Aids. Pollution Engineering
Magazine.
27. Motorola. Small Signal Wafer PRocessing. Motorola. Phoenix.
AZ.
28. Oldhara, W.G.. The Fabrication of Microelectronic Circuits.
Scientific American (Sept.. 1977).
29. Phillips, A.B.E, Transistor Engineering. McGraw-Hill. (1962).
30. Puchstein. A.F. et al.. Alternating Current Machines. J.
Wiley, (1954).
11-2
-------
31. Transformer Consultants, Why Annual Transformer Oil Testing.
The Consultor, Transformer Consultants, P.O. Box 3575, Akron,
Ohio. 44310 (1978).
32. U.S. Department of Commerce. Bureau of the Census, 1977
Census of Manufactures. Preliminary Statistics. Bureau of the
Census Reports No. MC 77-1-36 for SIC 3600-3699 Issued 1979.
33. U.S. Government, Public Law 94-469 Toxic Substances Control
Act. (Oct. 11. 1976).
34. Webster's Seventh New CollegiateDictionary, G & C Merriam
Co.. (1963).
11-3
-------
SECTION 12
GLOSSARY
Absorb - To take up matter or radiation.
Act - Federal Water Pollution Control Act.
Activate - To treat the cathode or target of an electron tube in
order to create or increase the emission of electrons.
Adjustable Capacitor - A device capable of holding an electrical
charge at any one of several discrete values.
Adsorption - The adhesion of an extremely thin layer of molecules
(of gas. liquid) to the surface of solids (granular activated
carbon for instance) or liquids with which they are in
contact.
Aging - Storage of a permanent magnet, capacitor, meter or other
device (sometimes with a voltage applied) until the
characteristics of the device become essentially constant.
Algicide - Chemicals used to retard the growth of phytoplankton
(algae) in bodies of water.
Aluminum Foil - Aluminum in the form of a sheet of thickness not
exceeding 0.005 inch.
Anneal - To treat a metal, alloy, or glass by a process of heating
and slow cooling in order to remove internal stresses and to
make the material less brittle.
Anode - The collector of electrons in an electron tube. Also known
as plate; positive el~ectrode.
Anodizing - An electrochemical process of controlled aluminum
oxidation producing a hard, transparent oxide up to several
mils in thickness.
Assembly or Mechanical Attachment - The fitting together of pre-
viously manufactured parts or components into a complete
machine, unit of a machine, or structure.
Autotransformer - A power transformer having one continuous wind-
ing that is tapped; part of the winding serves as the primary
coil and all of it serves as the secondary coil, or vice
versa.
12-1
-------
Ballast - A circuit element that serves to limit an electric
current or to provide a starting voltage, as in certain types
of lamps, such as in fluorescent ceiling fixtures.
Binder - A material used to promote cohesion between particles of
carbon or graphite to produce solid carbon and graphite rods
or pieces.
BJ.ochemica1 Oxyge n Demand (BOD) - (1) The quantity of oxygen used
in the biochemical oxidation of organic matter in a specified
time, at a specified temperature, and under specified
conditions. (2) Standard test used in assessing wastewater
quality.
Biodegradable - The part of organic matter which can be oxidized by
bioprocesses, e.g., biodegradable detergents, food wastes,
animal manure, etc.
Biological Wastewater Treatment - Forms of wastewater treatment in
which bacteria or biochemical action is intensified to
stabilize, oxidize, and nitrify the unstable organic matter
present. Intermittent sand filters, contact beds, trickling
filters, and activated sludge processes are examples.
Breakdown Voltage - Voltage at which a discharge occurs between two
electrodes.
Bulb - The glass envelope which incloses an incandescent lamp or an
electronic tube.
Busbar - A heavy rigid, metallic conductor, usually uninsulated,
used to carry a large current or to make a common connection
between several curcuits.
Bushing - An insulating structure including a central conductor, or
providing a central passage for a conductor, with provision
for mounting on a barrier (conducting or otherwise), for the
purpose of insulating the conductor from the barrier and
conducting current from one side of the barrier to the other.
Calcining - To heat to a high temperature without melting or
fusing, as to heat unformed ceramic materials in a kiln, or
to heat ores, precipitates, concentrates or residues so that
hydrates, carbonates or other compounds are decomposed and
volatile material is expelled, e.g., to heat limestone to
make lime.
Calibration - The determination, checking, or correction of the
graduation of any instrument giving quantitative measurements.
12-2
-------
Capacitance - The ratio of the charge on one of the plates of a
capacitor to the potential difference between the plates.
Capaci tor - An electrical circuit element used to store charge tem-
porarily, consisting in general of two conducting materials
separated by a dielectric material.
Carbon - A nonmetallic. chiefly tetravalent element found native or
as a constituent of coal, petroleum, asphalt, limestone, etc.
Cathode - The primary source of electrons in an electron tube; in
directly heated tubes the filament is the cathode, and in
indirectly heated tubes a coated metal cathode surrounds a
heater.
Cathode Ray Tube - An electron-beam tube in which the beam can be
focused to a small cross section on a luminescent screen and
varied in position and intensity to produce a visible pattern.
Central Treatment Facility - Treatment plant which co-treats
process wastewaters from more than one manufacturing
operation or co-treats process wastewaters- with noncontact
cooling water or with non-process wastewaters (e.g., utility
blow-down, miscellaneous runoff, etc.).
Centrifuge -.The removal of water in a sludge and water slurry by
introducing the water and sludge slurry into a centrifuge.
The sludge is driven outward with the water remaining near
the center. The dewatered sludge is usually landfilled.
Ceramic - A product made by the baking or firing of a nonmetallic
mineral such as tile, cement, plaster, refractories, and
brick.
Chemi cal Coagu1ation - The destabilization and initial aggregation
of colloidal and finely divided suspended matter by the
addition of a floe-forming chemical.
Chemical Oxidation - The addition of chemical agents to wastewater
for the purpose of oxidizing pollutant material, e.g..
removal of cyanide.
Chemical Oxycren Demand (COD) - (1) A test based on the fact that
all organic compounds, with few exceptions, can be oxidized
to carbon dioxide and water by the action of strong oxidizing
agents under acid conditions. Organic matter is converted to
carbon dioxide and water regardless of the biological
12-3
-------
assimilability of the substances. One of the chief
limitations is its inability to differentiate between
biologically oxidizable and biologically inert organic
matter. The major advantage of this test is the short time
required for evaluation (2 hours). (2) The amount of oxygen
required for the chemical oxidation of organics in a liquid.
'Chemical Precipitation - (1) Formation of insoluble materials
generated by addition of chemicals to a solution. (2) The
process of softening water by the addition of lime and soda
ash as the precipitants.
Chlori.nation - The application of chlorine to water or wastewater
generally for the purpose of disinfection, but frequently for
accomplishing other biological or chemical results,
Circuit Breaker - Device capable of making, carrying, and breaking
currents under normal or abnormal circuit conditions.
Cleaning - The removal of soil and dirt (including grit and grease)
from a workpiece using water with or without a detergent or
other dispersing agent.
Coil - A number of turns of wire used to introduce inductance into
an electric circuit, to produce magnetic flux, or to react
mechanically to a changing magnetic flux.
Coil-Core Assembly - A unit made up of the coil windings of a
transformer placed over the magnetic core.
Coking - (1) Destructive distillation of coal to make coke. (2) A
process for thermally converting the heavy residual bottoms
of crude oil entirely to lower-boiling petroleum products and
by- product petroleum coke.
Colloids - A finely divided dispersion of one material called the
"dispersed phase" (solid) in another material called the
"dispersion medium" (liquid). Normally negatively charged.
Composite Wastewater Sample - A combination of individual samples
of water or wastewater taken at selected intervals and mixed
in proportion to flow or time to minimize the effect of the
variability of an individual sample.
Concentric Windings - Transformer windings in which the low-voltage
winding is in the form of a cylinder next to the core, and
the high-voltage winding, also cylindrical, surrounds the
low-voltage winding.
12-4
-------
Conductor - A wire, cable, or other body or medium suitable for
carrying electric current.
Conduit - Tubing of flexible metal or other material through which
insulated electric wires are run.
Contamination - A general term signifying the introduction into
water of microorganisms, chemicals, wastes or sewage which
renders the water unfit for its intended use.
Contractor Removal - The disposal of oils, spent solutions, or
sludge by means of a scavenger service.
Conversion Coating - As metal-surface coating consisting of
compound of the base metal.
Cooling Tower - A device used to cool manufacturing process water
before returning the water for reuse.
Copper - A common, reddish, chiefly univalent and bivalent metallic
element that is ductile and malleable and one of the best
conductors of heat and electricity.
Core (Magnetic Core) - A quantity of ferrous material placed in a
coil or transformer to provide a better path than air for
magnetic flux, thereby increasing the inductance of the coil
or increasing the coupling between the windings of a
transformer.
Corona Discharge - A discharge of electricity appearing as a
bluish-purple glow on the surface of and adjacent to a
conductor when the voltage gradient exceeds a certain
critical value; caused by ionization of the surrounding air
by the high voltage.
Curing - A heating/drying process carried out in an elevated-
temperature enclosure.
Current Carrying Capacity - The maximum current that can be
continuously carried without causing permanent deterioration
of electrical or mechanical properties of a device or
conductor.
Dag (Aguadaq) - A conductive graphite coating on the inner and
outer side walls of some cathode-ray tubes.
Deqreasing - The process of removing grease and oil from the
surface of the basis material.
Dewatering - A process in which water is removed from sludge.
12-5
-------
Dicing - Sawing or otherwise machining a semiconductor wafer into
small squares or dice from which transistors and diodes can
be fabricated.
pie - A tool or mold used to cut shapes to or form impressions on
materials such as metals and ceramics.
Die Cutting (Also Blanking) - Cutting of plastic or metal sheets
into shapes by striking with a punch.
Dielectric - A material that is highly resistant to the conductance
of electricity; an insulator,
Di-n-octyl-phthalate - A liquid dielectric that is presently being
substituted for a PCS dielectric fluid.
Diode (Semiconductor). (Also Crystal Diode. CrystalRectifier) - A
two-electrode semiconductor device that utilizes the
rectifying properties of a p-n junction or point contact.
Discrete Device - Individually manufactured transistor, diode, etc.
Dissolved Solids - Theoretically the anhydrous residues of the dis-
solved constituents in water. Actually the term is defined
by the method used in determination. In water and wastewater
treatment, the Standard Methods tests are used.
Distribution Transformer - An element of an electric distribution
system located near consumers which changes primary distribu-
tion voltage to a lower consumer voltage.
Dopant - An impurity element added to semiconductor materials used
in crystal diodes and transistors.
Dragout - The solution that adheres to the part or workpiece and is
carried past the edge of the tank.
Dry Electrolytic Capacitor - An electrolytic capacitor with a paste
rather than liquid electrolyte.
Drying Beds - Areas for dewatering of sludge by evaporation and
seepage.
Dry Slug - Usually refers to a plastic-encased sintered tantalum
slug type capacitor.
12-i
-------
Dry Transformer - Having the core and coils neither impregnated
with an insulating fluid nor immersed in an insulating oil.
Effluent - The quantities, rates, and chemical, physical.
biological and other constituents of waters which are
discharged from point sources.
Electrochemical Machining - Shaping of an anode by the following
process: The anode and cathode are placed close together and
electrolyte is pumped into the space between them. An
electrical potential is applied to the electrodes causing
anode metal to be dissolved selectively, producing a shaped
anode that complements the shape of the cathode.
Electrolyte - A nonmetallic electrical conductor in which current
is carried by the movement of ions.
Electron Beam Lithography - Similar to photolithography - A fine
beam of electrons is used to scan a pattern and expose an
electron-sensitive resist in the unmasked areas of the object
surface. ,
Electron Discharge Lamp - An electron lamp in which light is
produced by passage of an electric current through a metallic
vapor or gas.
Electron Gun - An electrode structure that produces and may
control, focus, deflect and converge one or more electron
beams in an electron tube.
Electron .Tube - An electron device in which conduction of
electricity is accomplished by electrons moving through a
vacuum or gaseous medium within a gas-tight envelope.
Electroplating - The production of a thin coating of one metal on
another by electrode position.
Emissiye Coating - An oxide coating applied to an electrode to en-
hance the emission of electrons.
Emulsion Breaking - Decreasing the stability of dispersion of one
liquid in another.
End-of-Pipe Treatment - The reduction and/or removal of pollutants
by chemical treatment just prior to actual discharge.
Epitaxial Layer - A (thin) semiconductor layer having the same
crystaline orientation as the substrate on which it is grown.
12-7
-------
Epitaxial Transistor - Transistor with one or more epitaxial
layers.
Equalization - The process whereby waste streams from different
sources varying in pH, chemical constituents, and flow rates
are collected in a common container. The effluent stream
from this equalization tank will have a fairly constant flow
and pH level, and will contain a homogeneous chemical
mixture. This tank will help to prevent unnecessary shock to
the waste treatment system.
Etch - To corrode the surface of a metal in order to reveal its
composition and structure.
Extrusion - Forcing the carbon-binder-mixture through a die under
extreme pressure to produce desireable shapes and
characteristics of the piece.
Field-effect Transistors - Transistors made by the metal-oxide-
semiconductor (MOS) technique, differing from bipolar ones in
that only one kind of charge carrier is active in a single
device. Those that employ electrons are called n-MOS
transistors; those that employ holes are p-MOS transistors.
Filament - (1) Metallic wire which is heated in an incandescent
lamp to produce light by passing an electron current through
it. (2) A cathode in a fluorescent lamp that emits electrons
when electric current is passed through it.
Filtering Capacitor - A capacitor used in a power-supply filter
system to provide a low-reactance path for alternating
currents and thereby suppress ripple currents, without
affecting direct currents.
Flaced Capacitor - A capacitor having a definite capacitance value
that cannot be adjusted.
FloatGauge - A device for measuring the elevation of the surface
of a liquid, the actuating element of which is a buoyant
float that rests on the surface of the liguid and rises or
falls with it. The elevation of the surface is measured by a
chain or tape attached to the float.
Floe - A very fine, fluffy mass formed by the aggregation of fine
suspended particles.
12-8
-------
Flocculation - In water and wastewater treatment, the agglomeration
" 'of colloidal and finely divided suspended matter after
coagulation by gentle stirring by either mechanical or
hydraulic means. In biological wastewater treatment where
coagulation is not used, agglomeration may be accomplished
biologically.
Flocculator - An apparatus designed for the formation of floe in
water or sewage.
Flow-proportioned Sample - A sampled stream whose pollutants are
apportioned to contributing streams in proportion to the flow
rates of the contributing streams.
Fluorescent Lamp - An electric discharge lamp in which phosphor
materials transform ultraviolet radiation from mercury vapor
ionization to visible light.
Forming - Application of voltage to an electrolytic capacitor,
electrolytic rectifier or semiconductor device to produce a
desired permanent change in electrical characteristics as
part of the manufacturing process.
Frit Seal - A seal made by fusing together metallic powders with a
glass binder for such applications as hermatically sealing
ceramic packages for integrated circuits.
Funnel - The rear, funnel-shaped portion of the glass enclosure of
a cathode ray tube.
Fuse - Overcurrent protective device with a circuit-opening fusible
part that would be heated and severed by overcurrent passage.
Gate - One of the electrodes in a field effect transistor.
Getter - A metal coating inside a lamp which is activated by an
electric current to absorb residu'al water vapor and oxygen.
Glass - A hard, amorphous, inorganic, usually transparent, brittle
substance made by fusing silicates, and sometimes borates and
phosphates, with certain basic oxides and then rapidly
cooling to prevent crystallization.
Glow Lamp - An electronic device, containing at least two
electrodes and an inert gas, in which light is produced by a
cloud of electrons close to the negative electrode when a
voltage is applied between the electrodes.
Grab Sample - A single sample of wastewater taken at an "instant"
in time.
12-9
-------
Graphite - A soft black lustrous carbon that conducts electricity
and is a constituent of coal, petroleum, asphalt, limestone.
etc.
Grease. - In wastewater, a group of substances including fats,
waxes, free fatty acids, calcium and magnesium soaps, mineral
oil and certain other nonfatty materials. The type of
solvent and method used for extraction should be stated for
quantification.
Grease Skimmer - A device for removing grease or scum from the
surface of wastewater in a tank.
Green Body - An unbaked carbon rod or piece that is usually soft
and quite easily broken.
Grid - An electrode located between the cathode and anode of an
electron tube, which has one or more openings through which
electrons or ions can pass, and which controls the flow of
electrons from cathode to anode.
Grinding - The process of removing stock from a workpiece by the
use of abrasive grains held by a rigid or semi-rigid binder.
Hardness - A characteristic of water, imparted by calcium,
magnesium, and ion salts such as bicarbonates, carbonates,
sulfates, chlorides, and nitrates. These cause curdling of
soap, deposition of scale in boilers, damage in some
industrial processes and sometimes objectionable taste.
Hardness may be determined by a standard laboratory procedure
or computed from the amounts of calcium and magnesium as well
as iron, aluminum, manganese, barium, strontium, and zinc,
and is expressed as equivalent calcium carbonate.
Heavy Metals - A general name given to the ions of metallic
elements such as copper, zinc, chromium, and nickel. They
are normally removed from wastewater by an insoluble
precipitate (usually a metallic hydroxide).
Holding Tank - A reservoir to contain preparation materials so as
to be ready for immediate service,
Hybrid Integrated Circuits - A circuit that is part integrated and
part discrete.
Impact Extrusion - A cold extrusion process for producing tubular
components by striking a slug of the metal, which has been
placed in the cavity of the die. with a punch moving at high
velocity.
12-10
-------
Impregnate - To force a liquid substance into the spaces of a
porous solid in order to change its properties.
Incandescent Lamp - An electric lamp producing light in which a
metallic filament is heated white-hot in a vacuum by passage
of an electric current through it.
Industrial Wastes - The liquid wastes from industrial processes as
distinct from domestic or sanitary wastes.
Influent - Water or other liquid, either raw or partly treated.
flowing into a reservoir basin or treatment plant.
In-Process Control Technology - The regulation and conservation of
chemicals and rinse water at their point of use as opposed to
end-of-pipe treatment.
Insulating Paper - A standard material for insulating electrical
equipment, usually consisting of bond or kraft paper coated
with black or yellow insulating varnish on both sides.
Insulation (Electrical Insulation) - A material having high elec-
trical resistivity and therefore suitable for separating
adjacent conductors in an electric circuit or preventing
possible future contact between conductors.
Insulator - A nonconducting support.for an electric conductor.
Integrated Circuit - Assembly of electronic devices interconnected
into circuits.
Interleaved Winding - An arrangement of winding coils around a
transformer core in which the coils are wound in the form of
a disk, with a group of disks for the low-voltage windings
stacked alternately with a group of disks for the
high-voltage windings.
Intermittent Filter - A natural or artificial bed of sand or other
fine-grained material onto which sewage is intermittently
flooded and through which it passes, with time allowed for
filtration and the maintenance of aerobic conditions.
Ion Exchange - A reversible chemical reaction between a solid (ion
exchanger) and a fluid (usually a water solution) by means of
which ions may be interchanged from one substance to
another. The superficial physical structure of the solid is
not affected.
Ion Exchange Resins - Synthetic resins containing active groups
(usually sulfonic. carboxylic. phenol, or substituted amino
groups) that give the resin the ability to combine with or
exchange ions with a solution.
12-11
-------
Ion Implantation - A process of introducing impurities into the
near surface regions of solids by directing a beam of ions at
the solid.
Junction - A region of transition between two different semiconduc-
ting regions in a semiconductor device such as a p-n
junction, or between a metal and a semiconductor,
Junction Box - A protective enclosure into which wires or cables
are led and connected to form joints.
Knife Switch - Form of switch where moving blade enters stationary
contact clips.
Klystron - An evaculated electron-beam tube in which an initial
velocity modulation imparted to electrons in the beam results
subsequently in density modulation of the beam; used as an
amplifier in the microwave region or as an oscillator.
Lagoon '- A man-made pond or lake for holding wastewater for the re-
moval of suspended solids. Lagoons are also used as
retention ponds after chemical clarification to polish the
effluent and to safeguard against upsets in he clarifier; for
stabilization of organic matter by biological oxidation; for
storage of sludge; and for cooling of water.
Landfill - The disposal of inert, insoluble waste solids by dumping
at an approved site and covering with earth.
Lapping - The mechanical abrasion or surface planing of the
semiconductor wafer to produce desired surface and wafer
thickness.
Lime - Any of a family of chemicals consisting essentially of
calcium hydroxide made from limestone (calcite) which is
composed almost wholly of calcium carbonates or a mixture of
calcium and magnesium carbonates.
Limiting Orifice - A device that limis flow by constriction to a
relatively small area. A constant flow can be obtained over
a wide range of upstream pressures.
Machining - The process of removing stock from a workpiece by
forcing a cutting tool through the workpiece and removing a
chip of basis material. Machining operatings such as tuning,
milling, drilling, boring, tapping, planing, broaching,
sawing and cutoff, shaving, threading, reaming, shaping,
slotting, bobbing, filling, and chambering are included in
this definition.
12-12
-------
Maqnaflux Inspection - Trade name for magnetic particle test.
Make-up Water - Total amount of water used by any process/process
step.
Mandrel - A metal support serving as a core around which the metals
are wound and anealled to form a central hole.
Mask (Shadow Mask) - Thin sheet steel screen with thousands of
apertures through which electron beams pass to a color
picture tube screen. The color of an image depends on the
balance from each of three different electron beams passing
through the mask.
Metal Oxide Semiconductor Device - A metal insulator semiconductor
structure in which the insulating layer is an oxide of the
substrate material; for a silicon substrate, the insulating
layer is silicon dioxide
Mica - A group of aluminum silicate minerals that are characterized
by their ability to split into thin, flexible flakes because
of their basal cleavage.
Miliqrams Per Liter (mg/1) - This is a weight per volume
designation used in water and wastewater analysis.
Mixed Media Filtration - A filter which uses two or more filter
materials of differing specific gravities selected so as to
produce a filter uniformly graded from coarse to fine.
MOS - (See Metal Oxide Semiconductor).
Mount Assembly - Funnel neck ending of picture tube holding
electron gun(s) .
National Pollutant Discharge Elimination System (NPDES) - The
federal mechanism for regulating point source discharge by
means of permits.
Neutralization - Chemical addition of either acid or base to a
solution such that the pH is adjusted to approximately 7.
Noncontact Cooling Water - Water used for cooling which does not
come into direct contact with any raw material, intermediate
product, waste product or finished product.
Oil-Filled Capacitor - A capacitor whose conductor and insulating
elements are immersed in an insulating fluid that is usually.
but not necessarily, oil.
12-13
-------
Outfall - The point or location where sewage or drainage discharges
from a sewer, drain, or conduit.
Oxide Mask - Oxidized layer of silicon wafer through which
"windows" are formed which will allow for dopants to be
introduced into the silicon.
Panel - The front, screen portion of the glass enclosure of a
cathode ray tube.
PCS (PQlychlorinated Biphenyl) - A colorless liquid, used as an in-
sulating fluid in electrical equipment. (The future use of
PCB for new transformers was banned by the Toxic Substances
Control Act of October 1976).
pJK - The negative of the logarithm of the hydrogen ion
concentration. Neutral water has a pH value of 7. At pH
lower than 7, a solution is acidic. At pH higher than 7, a
solution is alkaline.
pH Ad iustment - A means of maintaining the optimum pH through the
use of chemical additives. Can be manual, automatic, or
automatic with flow corrections.
Phase - One of the separate circuits or windings of a polyphase
system, machine or other appartus.
Phase Assembly - The coil-core assembly of a single phase of a
transformer.
Phosphate Coating - A conversion coating on metal, usually steel,
produced by dipping it into a hot aqueous solution of iron,
zinc, or manganese phosphate.
Phosphor - Crystalline inorganic compounds that produce light when
excited by ultraviolet radiation.
Photolithography - The process by which a microscopic pattern is
tranferred from a photomask to a material layer (e.g..
SiO } in2an actual circuit.
Photomask - A film or glass negative that has many high-resolution
images, used in the production of semiconductor devices and
integrated circuits.
Photon - A quantum of electromagnetic energy.
Photoresist - A light-sensitive coating that is applied to a sub-
strate or board, exposed, and developed prior to chemical
etching; the exposed areas serve as a mask for selective
etching.
12-14
-------
Picture Tube - A cathode ray tube used in television receivers to
produce an image by varying the electron beam intensity as
the beam scans a fluorescent screen.
Plate - (1) Preferably called the anode. The principal electrode
to which the electron stream is attracted in an electron
tube. (2) One of the conductive electrodes in a capacitor.
Polar Capacitor - An electrolytic capacitor having an oxide film on
only one foil or electrode which forms the anode or positive
terminal.
Pole TypeTransformer - A transformer suitable for mounting on a
pole or similar structure.
Poling - A step in the production of ceramic piezoelectric bodies
which orients the oxes of the crystallites in the preferred
direction.
Polishing - The process of removing stock from a workpiece by the
action of loose or loosely held abrasive grains carried to
the workpiece by a flexible support. Usually, the amount of
stock removed in a polishing operation is only incidental to
achieving a desired surface finish or appearance.
Pollutant - The term "pollutant" means dredged spoil,, solid
wastes, incinerator residue, sewage, garbage, sewage sludge,
munitions, chemical wastes, biological materials, radioactive
materials, heat, wrecked or discarded equipment, rock, sand,
cellar dirt and industrial, municipal and agricultural waste
discharged into water.
Pollutant Parameters - Those constituents of wastewater determined
to be detrimental and, therefore, requiring control.
Pollution Load - A measure of the unit mass of a wastewater in
terms of its solids or oxygen-demanding characteristics, or
in terms of harm to receiving waters.
Polyelectrolytes - Synthetic or natural polymers containing ionic
constituents, used as a coagulant or a coagulant aid in water
and wastewater treatment.
Power Regulators - Transformers used to maintain constant output
current for changes in temperature output load, line current,
and time.
12-15
-------
Power Transformer - Transformer used at a generating station to
step up the initial voltage to high levels for transmission.
Prechlorination - (1) Chlorination of water prior to filtration.
(2) Chlorination of sewage prior to treatment.
Precipitate - The discrete particles of material settled-from a
liquid solution.
Pressure Filtration - The process of solid/liquid phase separation
effected by passing the more permeable liquid phase through a
mesh which is impenetrable to the solid phase.
Pretreatment - Any wastewater treatment process used to reduce
pollution load partially before the wastewater is introduced
into a main sewer system or delivered to a treatment plant
for substantial reduction of the pollution load.
Primary Feeder Circuit (Substation) Transformers - These
. transformers (at substations) are used to reduce the voltage
from the subtransmission level to the primary feeder level.
Primary Treatment - A process to remove substantially all floating
and settleable solids in wastewater and partially to reduce
the concentration of suspended solids.
Primary Winding - Winding on the supply (i.e. input) side of a
transformer.
Priority Pollutant - The 129 specific pollutants established by
the EPA from the S5 pollutants and classes of pollutants as
outlined in the consent decree of June 8. 1976.
Process Wastewater - Any water which, during manufacturing or
processing, comes into direct contact with or results from
the production or use of any raw materials, intermediate
product, finished product, by-product, or waste product.
Process Water - Water prior to its direct contact use in a process
or operation. (This water may be any combination of a raw
water, service water, or either process wastewater or
treatment facility effluent to be recycled or reused.)
Pyrolysis - The breaking apart of complex molecules into simpler
units by the use of heat, as in the pyrolysis of heavy oil to
make gasoline.
Quenching - Shock cooling by immersion of liquid or molten
material in a cooling medium (liquid or gas). Used in
metallurgy, plastics forming, and petroleum refining.
12-16
-------
Raceway - A channel used to hold and protect wires, cables or
busbars.
Rapid Sandfilter - A filter for the purification of water where
water which has been previously treated, usually by
coagulation and sedimentation, is passed through a filtering
medium consisting of a layer of sand or prepared anthracite
coal or other suitable material, usually from 24 to 30 inches
thick and resting on a supporting bed of gravel or a porous
medium such as carborundum. The filtrate is removed by a
drain system. The filter is cleaned periodically by
reversing the flow of the water through the filtering
medium. Sometimes supplemented by mechanical or air
agitation during backwashing to remove mud and other
impurities.
Raw Wastewater - Plant water prior to any treatment or use.
Rectifier - (1) A device for converting alternating current into
direct current. (2) A nonlinear circuit component that.
ideally, allows current to flow in one direction unimpeded
but allows no current to flow in the other direction.
Recycled Water - Process wastewater or treatment facility effluent
which is recirculated to the same process.
Resistor - A device designed to provide a definite amount of
resistance, used in circuits to limit current flow or to
provide a voltage drop.
Retention Time - The time allowed for solids to collect in a
settling tank. Theoretically retention time is equal to the
volume of the tank divided by the flow rate. The actual
retention time is determined by the purpose of the tank.
Also, the design residence time in a tank or reaction vessel
which allows a chemical reaction to go to completion, such as
the reduction of hexavalent chromium or the destruction of
cyanide.
Reused Water - Process wastewater or treatment facility effluent
which is further used in a different manufacturing process.
Rinse - Water for removal of dragout by dipping, spraying, fogging
etc.
Sanitary Sewer - A sewer that carriers liquid and water wastes from
residences, commercial buildings, industrial plants' and
institutions together with ground, storm, and surface waters
that are not admitted intentionally.
12-17
-------
Sanitary Water - The supply of water used for sewage transport and
the continuation of such effluents to disposal.
Secondary Settling Tank - A tank through which effluent from some
prior treatment process flows for the purpose of removing
settleable solids.
SecondaryWastewater Treatment - The treatment of wastewater by
biological methods after primary treatment by sedimentation.
Secondary Winding - Winding on the load (i.e. output) side of a
transformer.
Sedi.nte ntation - Settling of matter suspended in water by gravity.
It is usually accomplished by reducing the velocity of the
liquid below the point at which it can transport the
suspended material.
Semiconductor - (1) A solid crystalline material whose electrical
conductivity is intermediate between that of a metal and an
insulator. (2) A solid state electrical device that performs
functions such as information processing and display, power
handling, and interconversion between light energy and
electrical energy.
Settleable Solids - (1) That matter in wastewater which will not
stay in suspension during a preselected settling period, such
as one hour, but either settles to the bottom or floats to
the top. (2) In the Imhoff cone test, the volume of matter
that settles to the bottom of the cone in one hour.
Sewer - A pipe or conduit, generally closed, but normally not
flowing full, for carrying sewage and other waste liquids.
Silvering - The deposition of thin films of silver on glass, etc.
carried by one of several possible processes.
Skimming Tank - A tank so designed that floating matter will rise
and remain on the surface of the wastewater until removed,
while the liquid discharges continuously under walls or scum
boards.
Sludge - The solids (and accompanying water and organic matter)
which are separated from sewage or industrial wastewater.
Sludge Cake - The material resulting from air drying or dewatering
sludge (usually forkable or spadable).
12-18
-------
Sludge Disposal - The final disposal of solid wastes.
Sludge Thickening - The increase in solids concentration of sludge
in a sedimentation or digestion tank.
Snubper - Shock absorber.
Soldering - The process of joining metals by flowing a thin
(capillary thickness) layer of nonferrous filler metal into
the space between them. Bonding results from the intimate
contact produced by the dissolution of a small amount of base
metal in the molten filler metal, without fusion of the base
metal.
Solvent - A liquid capable of dissolving or dispersing one or more
other substances.
Solvent Deareasing - The removal of oils and grease from a
workpiece using organic solvents or solvent vapors.
Sputtering - A process to deposit a thin layer of metal on a solid
surface in a vacuum. Ions bombard a cathode which emits the
metal atoms.
Stacked Capacitor - Device containing multiple layers of dielectric
and conducting materials and designed to store electrical
charge.
Stamping - Almost any press operations including blanking.
shearing, hot or cold forming, drawing, blending, or coining.
Steel - An iron-based alloy, malleable under proper conditions.
containing up to about 2% carbon.
Step-Down Transformers - (Substation) - A transformer in which the
AC voltages of the secondary windings are lower than those
applied to the primary windings,
Step-Up Transformer - Transformer in which the energy transfer is
from a low-voltage primary (input) winding to a high-voltage
secondary (output) winding or windings.
Studs - Metal pins .in glass of picture tube onto which shadow mask
is hung,
Substation - Complete assemblage of plant, equipment, and the
necessary buildings at a place where electrical energy is
received (from one or more power-stations) for conversion
(e.g. from AC to DC by means of rectifiers, rotary
converters), for stepping-up or down by means of
transformers, or for control (e.g. by means of switch-gear,
etc.).
12-19
-------
Subtransmission (Substation) Transformers - At the end of a trans-
mission line, the voltage is reduced to the subtransmission
level (at substations) by subtransmission transformers.
Suspended Solids - (1) Solids that are either floating or in
suspension in water, wastewater, or other liquids, and which
are largely removable by laboratory filtering. (2) The
quantity of material removed from wastewater in a laboratory
test, as prescribed in "Standard Methods for the Examination
of Water and Wastewater" and referred to as non-filterable
residue.
Tantalum - A lustrous, platinum-gray ductile metal used in making
dental and surgical tools, penpoints. and electronic
equipment.
Tantalum Foil - A thin sheet of tantalum, usually less than 0.006
inch thick.
Terminal - A screw, soldering lug. or other point to which electric
connections can be made.
Testing - A procedure in which the performance of a product is
measured under various conditions.
Thermoplastic Resin - A plastic that solidifies when first heated
under pressure, and which cannot be remelted or remolded
without destroying its original characteristics; examples are
epoxides, melamines. phenolics and ureas.
Transformer - A device used to transfer electric energy, usually
that of an alternating current, from one circuit to another;
especially, a pair of multiply-wound, inductively coupled
wire coils that effect such a transfer with a change in
voltage, current, phases, or other electric characteristics.
Transistor - An active component of an electronic circuit
consisting of a small block of semiconducting material to
which at least three electrical contacts are made; used as an
amplifier, detector, or switch.
Trickling Filter - A filter consisting of an artificial bed of
coarse material, such as broken stone, clinkers, slats, or
brush over which sewage is distributed and applied in drops.
films, or spray, from troughs, drippers, moving distributors
or fixed nozzles and through which it trickles to the
underdrain giving opportunity for the formation of zoogleal
slimes which clarify the oxidized sewage.
12-20
-------
Trimmer___Caj^a_ci/tars_ - These are relatively small variable
capacitors used in parallel with larger variable or fixed
capacitors to permit exact adjustment of the capacitance of
the parallel combination.
Vacuum Filter - A filter consisting of a cylindrical drum mounted
on horizontal, axis, covered with a filter cloth revolving
with a partial submergence in liquid. A vacuum is maintained
under the cloth for the larger part of a revolution to
extract moisture and the cake is scraped off continuously.
Vacuum Metalizinq - The process of coating a workpiece with metal
by flash heating metal vapor in a high-vacuum chamber
containing the workpiece. The vapor condenses on all exposed
surfaces.
Vacuum Tube - An electron tube vacuated to such a degree that its
electrical characteristics are essentially unaffected by the
presence of residual gas or vapor.
Variable Capacitor - A device whose capacitance can be varied
continuously by moving one set of metal plates with respect
to another.
Voltage Breakdown - The voltage necessary to cause insulation
failure.
Vo11age R e gu1a tor - Like a transformer, it corrects changes in
current to provide continuous, constant current flow.
Welding - The process of joining two or more pieces of material
by applying heat, pressure or both, with or without filler
material, to produce a localized union through fusion or
recrystallization across the interface.
Wet Air Scrubber - Air pollution control device which uses a liquid
or vapor to absorb contaminants and which produces a
wastewater stream.
Wet Capacitor - {See oil-filled capacitor).
Wet Slug Capacitor - Refers to a sintered tantalum capacitor where
the anode is placed in a metal can, filled with an
electrolyte and then sealed.
Wet Tantalum Capacitor - A polar capacitor the cathode of which is
a liquid electrolyte (a highly ionized acid or salt solution).
12-21
-------
Met Transformer - Having the core and coils immersed in an
insulating oil.
YoHe A set of coils placed over the neck of a magnetically
deflected cathode-ray tube to deflect the electron bean
horizontally and vertically when suitable currents are passed
through the coils.
12 22 ťO.S. OOTOUMBH! PRIWIKS OJTO3E l 1983 0-381-545/5829
------- |