DRAFT DEVELOPMENT DOCUMENT

                for the
  ELECTRICAL AND  ELECTRONIC COMPONENTS
         POINT SOURCE CATEGORY
           Douglas M. Costle
             Administrator
            Eckardt C.  Beck
        Assistant Administrator
    for Water and Waste Management
            Steven Schatzow
    Deputy Assistant Administrator
   for Water Planning and Standards
          Robert B. Schaffer
Director, Effluent Guidelines Division
          G. Edward Stigall
  Chief,  Inorganic Chemicals Branch
           Richard J. Kinch
        Senior Project Officer

            Frank H. Hund
           Project Officer
            October ,  1980
     Effluent  Guidelines  Division
 Office  of  Water  and  Waste Management
 U.S.  Environmental Protection Agency
       Washington, D. C.  20460

-------

-------
                     TABLE OF CONTENTS
SECTION                       TITLE

  I       CONCLUSIONS AND SUMMARY

  II      RECOMMENDATIONS

  III     INTRODUCTION

  IV      SUBCATEGORIZATION

  V       DRY PRODUCTS SUBCATEGORY
               Switchgear and Fuses
               Resistance Heaters
               Ferrite Electronic Parts
      	      Motors and Generators
               Fuel Cells
               Alternators
               Insulated Wire and Cuble,
                 Non-Ferrous

  VI      CARBON AND GRAPHITE PRODUCTS
               Products   i
               Size of Industry
               Manufacturing Processes
               Materials
               Water Usage
               Production Normalizing Parameters
               Waste Characterization and
                 Treatment-In-Place
               Potential Polluant Parameters
               Applicable Treatment Technologies
               Benefit Analysis

  VII      DIELECTRIC MATERIALS  SUBCATEGORY
               Products
               Size of Industry
               Manufacturing Processes
               Materials
               Water Usage
               Production Normalizing Parameters
               Waste Characterization and
                 Treatment-In-Place
               Potential Pollutant Parameters
               Applicable Treatment Technologies
               Benefit Analysis
 III-l

 IV-1

 V-l
 V-l
 V-2
 V-4
 V-6
 V-8
 V-10
 V-l 2
VI-1
VI-2
VI-4
VI-6
VI-9
VI-11
VI-13

VI-36
VI-43
VI-48
VII-1
VII-5
VII-6
VII-11
VII-16
VII-19
VII-22

VII-42
VII-42
VII-63

-------
                     TABLE OF CONTENTS
                        (Continued ]f
SECTION
  VIII
  IX
  X
                    TITLE

ELECTRIC LAMP SUBCATEGORY
     Products
     Size of the Industry
     Manufacturing Processes
     Materials
     Water Usage
     Production Normalizing Parameters
     Waste Characterization and
       Treatment-In-Place
     Potential Pollutant Parameters
     Applicable Treatment Technologies
     Benefit Analysis

ELECTRON TUBE SUBCATEGORY
     Products
     Size of the Industry
     Manufacturing Processes
     Materials
     Water Usage
     Production Normalizing Parameters
     Waste Characterization and
       Treatment-In-Place
     Potential Pollutant Parameters
     Applicable Treatment Technologies
     Benefit Analysis

SEMICONDUCTOR SUBCATEGORY
     Products
     Size of the Industry
     Manufacturing Processes
     Materials
     Water Usage
     Production Normalizing Parameters
     Waste Characterization and
       Treatment-In-Place
     Potential Pollutant Parameters
     Applicable Treatment Technologies
     Benefit Analysis
                                                       PAGE
                                                       VIII-1
                                                       VIII-3
                                                       VIII-5
                                                       VIII-16
                                                       VIII-19
                                                       VIII-20
                                                       VIII-24

                                                       VIII-59
                                                       VIII-67
                                                       VIII-77
                                                       IX-1
                                                       IX-6
                                                       IX-7
                                                       IX-13
                                                       IX-15
                                                       IX-15
                                                       IX-18

                                                       IX-68
                                                       IX-77
                                                       IX-93
                                                       X-l
                                                       X-2
                                                       X-3
                                                       X-9
                                                       X-13
                                                       X-l 5
                                                       X-16

                                                       X-87
                                                       X-88
                                                       X-97
                                 11

-------
                     TABLE OF CONTENTS
                        (Continued)
SECTION                       TITLE                    PAGE

  XI      CAPACITOR SUBCATEGORY
               Products                                XI-1
               Size of the Industry                    XI-3
               Manufacturing Processes                 XI-3
               Materials                               XI-17
               Water Usage                             XI-18
               Production Normalizing Parameters       XI-18
               Waste Characterization and              XI-22
                 Treatment-In-Place
               Potential Pollutant Parameters          XI-46
               Applicable Treatment Technologies       XI-47
               Benefit Analysis                        XI-67

XII       CONTROL AND TREATMENT TECHNOLOGY
               Introduction                            XII-1
               Transfer of Performance                 XII-3
               Individual Treatment Technologies       XII-68
               In-Process Treatment Techniques         XII-128

  XIII    COST OF WASTEWATER CONTROL AND TREATMENT
               Introduction                            XIII-1
               Cost Estimation Methodology             XIII-1
               Cost Estimates for Individual           XIII-15
                 Treatment Technologies
               Energy and Non-Water Quality Aspects    XIII-56

  XIV     ACKNOWLEDGEMENTS                             XIV-1

  XV      REFERENCES                                   XV-1

  XVI     GLOSSARY                                     XVI-1
                                iii

-------

-------
      SECTION I
TO BE PREPARED BY EPA
       1-1

-------

-------
                            SECTION III

                           INTRODUCTION
GUIDELINE DEVELOPMENT SUMMARY

The Electrical and Electronic Components (E&EC) Category is des-
cribed in terras of the Standard Industrial Classifications
(SIC's) as defined in Table 3-1.  This document encompasses the
following E&EC product areas:

          Carbon and Graphite                        .
          Switchgear and Fuses
          Resistance Heaters
          Incandescent Lamps
          Fluorescent Lamps
          Electron Tubes
          Cathode and TV Tubes
          Insulators - Mica
          Insulators - Plastic and Laminates
     .    Capacitors
          Semiconductors (Simple)
          Semiconductors (Complex)
          Electric and Electronic Components
          Wet Transformers

Effluent guidelines for the E&EC Category were developed from
data obtained from previous EPA studies, literature searches,
and plant surveys and evaluations.  Initially, all existing
information from EPA records and available literature was re-
viewed to determine the production processes performed, raw
materials utilized, wastewater treatment practices, water uses
and wastewater characteristics.  In addition to providing a
description of the E&EC Category, this existing information
also identified both the need to acquire additional information
and potential plants to contact for this information.

Approximately 160 plants were contacted by phone and letters to
obtain additional data on the E&EC Category.  Thirty-nine of
these plants were visited for an on-site study of their manu-
facturing processes, water use and wastewater treatment.  In
addition, wastewater samples were collected at twenty-four of
the visited plants.  Sampling was utilized to determine the
source and quantity of pollutants in the raw process wastewater
and Jbreated effluent from a cross-section of plants in the E&EC
Category.

Utilizing both existing data and sampling data collected during
this study, the wastewater characteristics of the E&EC Category
were assessed to determine possible uniformity from plant to
plant and thus the applicability of one set of discharge stan-
dards.  Since the discharge characteristics of all plants in the
                                  III-l

-------
                             TABLE  3-1

                          E&EC CATEGORY
SIC   3612 - Power, Distribution, and Specialty Transformers
SIC   3613 - Switchgear and Switchboard Apparatus
SIC   3621 - Motors and Generators
SIC   3622 - Industrial Controls
SIC   3623 - Welding Apparatus, Electric
SIC   3624 - Carbon and Graphite Products
SIC   3629 - Electrical Industrial Apparatus, Not Elsewhere
            Classified
SIC   3631 - Household Cooking Equipment
SIC   3632 - Household Refrigerators and Home and Farm Freezers
SIC   3633 - Household Laundry Equipment
SIC   3634 - Electric Housewares and Fans
SIC   3635 - Household Vacuum Cleaners
SIC   3639 - Household Appliances, Not Elsewhere Classified
SIC   3641 - Electric Lamps
SIC   3643 - Current-Carrying Wiring Devices
SIC   3644 - Noncurrent-Carrying Wiring Devices
SIC   3645 - Residential Electric Lighting Fixtures
SIC   3646 - Commercial, Industrial, and Institutional Electric
            Lighting Fixtures
SIC   3647 - Vehicular Lighting Equipment
SIC   3648 - Lighting Equipment, Not Elsewhere Classified
SIC   3651 - Radio and Television Receiving Sets, Except
            Communication Types
SIC   3652 - Phonograph Records and Pre-recorded Magnetic Tape
SIC   3661 - Telephone and Telegraph Apparatus
SIC   3662 - Radio and Television Transmitting, Signaling, and
            Detection Equipment and Apparatus
            Radio and Television Receiving Type Electron Tubes,
            Except Cathode Ray
SIC   3672 - Cathode Ray Television Picture Tubes
SIC   3673 - Transmitting, Industrial, and Special Purpose
            Electron Tubes
SIC   3674 - Semiconductors and Related Devices
SIC   3675 - Electronic Capacitors
SIC   3676 - Resistors, for Electronic Applications
SIC   3677 - Electronic Coils, Transformer and Other Inductors
SIC   3678 - Connectors, for Electronic Applications
SIC   3679 - Electronic Components, Not Elsewhere Classified
SIC   3693 - Radiographic X-Ray, Fluoroscopic X-Ray, Therapeutic
            X-Ray, and Other X-Ray Apparatus and Tubes; Electro-
            medical and Electrotherapeutic Apparatus
SIC   3694 - Electrical Equipment for Internal Combustion Engines
SIC   3699 - Electrical Machinery, Equipment, and Supplies, Not
            Elsewhere Classified
SIC  3671 -
                                 III-2

-------
data base were not uniform, it was necessary to establish sub-
categories for which the wastewater characteristics of each
subcategory were uniform.  The initial subcategorization of the
E&EC Category was made by product type as follows:

          Transformers
          Switchgear and Fuses
          Carbon and Graphite
          Resistance Heaters
          Electric Lamps
          Insulators
          Electron Tubes
          Semiconductors
          Capacitors      .

The manufacturing processes associated with some products in the
above areas do not generate wastewaters.  In addition, the manu-
facturing processes of some products are already covered by
existing regulations (for example metal finishing).  Therefore,
the initial approach to subcategorization was modified to a
combined product/manufacturing process basis.  This modified
approach encompasses only those products and manufacturing
processes unique to the E&EC Category where wastewater is
generated.  This modification resulted in the establishment of
the following subcategories for which,effluent limitations are
required:

          Dielectric Materials
          Carbon and Graphite Products
          Electric Lamps
          Picture Tubes
          Semiconductors
          Capacitors

Further subdivision of the subcategories may be required to
account for variations in wastewater characteristics requiring
treatment resulting from different basis materials, production
processes, product types and their attendant wastewater
characteristics.

Once the subcategorization approach was established, all of the
data collected were analyzed to determine wastewater generation
and raw waste characteristics for each subcategory.  In addition,
the full range of control and treatment technologies existing
within the E&EC Category was identified.  This technology
review was accomplished by considering the pollutants to be
treated and the chemical, physical and biological characteristics
of these pollutants.  Special attention v/as paid to in-process
technology such as the recovery and reuse of process solutions,
the recycle or reuse of process water and the curtailment of
water use.
                                III-3

-------
 The  information  as  outlined  above was  then  evaluated in order to
 determine  applicable  treatment  technology for each  subcategory.
 In evaluating  these technologies, various factors were con-
 sidered.   These  included  demonstrated  performance,  the total
 cost of application of  the technology  in relation to the pollu-
 tant reduction benefits to be achieved, the age of  equipment
 and  facilities involved,  the processes employed, the engineering
 aspects of the application of various  types of control tech-
 niques, process  changes,  and non-water quality environmental
 impact  (including energy  requirements).

 Sources of Industry Data

 Data on the E&EC Category were  gathered from literature
 studies, contacts with  EPA regional offices, previous industry
 studies by the EPA, plant surveys and  evaluations,  and inquiries
 to waste treatment  equipment manufacturers.  These  data sources
 are  discussed  below.

 Literature Study -  Published literature in  the form of books,
 reports, papers, periodicals, promotional materials, Dun and
 Bradstreet surveys  and  Department of Commerce Statistics was
 examined;  the  most  informative  sources are  listed in Section
 XIII.  The researched material  included product descriptions
 and  uses,  manufacturing processes utilized,  raw materials con-
 sumed, waste treatment  technology and  the overall characteristics
 of plants  in the E&EC Category  concerning number of plants,
 employment levels and production.

 EPA  Regional Office Contacts -  All 10  EPA regional  offices were
 telephoned for assistance in identifying E&EC plants in their
 respective regions.

 EPA  Studies -  A  previous  preliminary and unpublished EPA study
 of the E&EC Category was  reviewed.  This information included
 sampling data  from  nine plants, visit  trip  reports  from 21
 plants, and data from phone  surveys of 81 E&EC plants.  Visit
 trip  report and  survey  data  included information on products
 manufactured,  manufacturing  processes  performed, water use, and
 wastewater treatment for  each plant.   A summary of  these visits
 and phone  contacts  is presented in Table 3-2 for each E&EC
 product area.  The  only stream  data available from  these previous
 EPA  studies came from sampling  visits  to nine plants.

 Plant Survey and Evaluation  - Three types of data collection were
 used to supplement  available information pertaining to facilities
 in the E&EC Category.   First, approximately 160 plants were
 contacted  by phone  and/or letter to obtain  basic information re-
 garding products, manufacturing processes performed, wastewater
 generation and waste treatment.  Second, based upon this in-
 formation, 39 plants were visited to view their operations and
 discuss their products, manufacturing  processes, water use and
wastewater treatment.   Finally, 24 plants were selected for
                                III-4

-------
sampling visits to determine the pollutant characteristics of their
wastewater.  Table 3-3 summarizes these plant contacts for each
E&EC product area.

The sampling program at each plant consisted of up to three days
of sampling.  Prior to any sampling visit all available dataf such
as layouts and diagrams of the selected plant's production processes
and waste treatment facilities, were reviewed.  In most cases, a
visit to the plant to be sampled was made prior to thev actual
sampling visit to finalize the sampling approach.  Representative
sample points were then selected.  Finally, before conducting a:
visit, a detailed sampling plan showing the selected sample points
and all pertinent sample data to be obtained was generated and
reviewed.

For all sampling, flow proportioned composite samples or the equi-
valent (for batch discharge) were taken over the daily time period
the plant was in operation.  Sample points typically included a
total raw waste sample, a final treated effluent sample, and a
sample of a particular process step that was of interest.  For
example, a typical semiconductor sampling visit included samples
of the final effluent, total raw waste, and wet air scrubber
discharge streams.

All of the samples collected were kept on ice throughout each day
of sampling.  At the end of the sampling day, the composite
samples were divided into several bottles and preserved according
to EPA protocol.

All samples were subjected to three levels of analysis depending
on the stability of the parameters to be analyzed.  On-site
analysis, performed by the sampler at the facility, determined
flow rate, pH, and temperature.  Five liters of water from each
sample point for each sampling day were delivered to a laboratory
in the vicinity of the subject plant and analyzed for total
cyanide, fluoride, total organic carbon, biological oxygen demand,
oil and grease, phenols, and total suspended solids.  This analysis
was performed by these local laboratories within 24 hours after
each sample was collected. Because of the sensitive nature of
the cyanide and phenols analysis procedures, a quality assurance
questionnaire was completed by all laboratories performing this
analysis.
                                 III-5

-------
                               TABLE  3-2
               SUMMARY OF PREVIOUS EPA E & EC CATEGORY
                               CONTACTS
Product Area
Phone Contact
Resistance Heaters            -
Switchgear & Puses            10
Transformers                   5
Insulators                    15
Electron Tubes                14
Carbon & Graphite Products    13
Semiconductors                10
Capacitors                     5
Electric Lamps                 9
Totals                        	
                              81
Plant Visit Data  Sample Data
                          1
                          1
                          3
                          1
                          5
                          5
                          5

                         IT
                      1
                      3
                      2
                      2
                              III-6

-------
                               TABLE 3-3
                   PLANT SURVEY & EVALOATION SUMMARY
Product Area
Transformers
Switchgear
and Fuses
Carbon and
Graphite
Resistance
Heaters
Electric Lamps
Insulators
Electron Tubes
Semiconductors
Capacitors
Totals
Phone Contact
     25
     14

      5

      2

     23
     18
     12
     41
     23

    163
Plant Visit Data
      4
Sample Data
      1
      6
      1
      5
     10
      8

     3?
      4
      1
      2
      9
      4

     I?
                                 III-7

-------
 The remainder of the composite samples collected each day were
 analyzed by an IFB organics laboratory and an IPS metals  laboratory,
 These two laboratories were selected by the Sample Control Center
 prior to the plant visit,   ail organic samples were shipped on  ice
 to the organics laboratory daily,  and all  metals samples  were
 shipped at the end of the  sampling visit.   Analyses performed
 at the IPS laboratories were in accordance with EPA protocol.

 Waste Treatment Equipment  Manufacturers -  Various manufacturers
 of waste treatment equipment were  contacted by phone or visited
 to obtain cost and performance data on specific technologies.
 Information collected was  based both on manufacturer's research
 and on in-situ operation at plants that were not E&EC manufacturers
 but had similar wastewater characteristics of primarily heavy
 metals wastes.

 UTILIZATION OF INDUSTRY DATA

 Data collected from the previously described sources are  used
 throughout this report in  the development  of a base for limitations
 and standards  for  each E&EC subcategory.   Previous EPA studies,
 the literature,  and plant  visits provided  the information used  to
 describe  the E&EC  Category in terms of its products as presented
 later in  this  section.   This same  information also provided the
 basis for the  subcategorization approach discussed in Section IV.
 Raw wastewater characteristics and effluent data presented for
 each subcategory in Section VI through XI  were obtained from
 previous  EPA sampling  data as well  as  sampling conducted .during
 this study.  Based  on  these sampling data,  pollutant parameters
 requiring control  in each  subcategory  were selected and are
 presented in Sections  VI through XI  for each subcategory.
 Applicable  treatment technologies  for  control  of these pollutants
 are  also  presented  in  Section XII.   The applicability of  each
 technology  is  supported by its use  in  the  E&EC Category as  well as
 data from treatment manufacturers  or its use in other industries
 with similar wastes.   The  cost and performance of treatment
 (both individual technologies and  systems)  are also presented in
 Section XIII for each  subcategory.  These  costs  are based
 primarily on data from equipment manufacturers.   Specific  systems
 for  each  subcategory are detailed  in the individual  subcategory
presentations  (Sections VI  through XI).  Actual  performance  based
on sampling  data and performance of observed treatment based
on data from many industrial  areas with similar  wastes and
treatment are also presented.
                                 XII-8

-------
                         SECTION IV

                 INDUSTRY SUBCATEGORIZATION
INTRODUCTION

The purpose of industry subcategorization is to establish group-
ings within the Electrical and Electronic Components  (E&EC)
Point Source Category such that each group has a uniform set of
effluent limitations.  Subcategorization should be based on raw
waste characteristics and the factors that affect the raw waste
characteristics of a plant.  Thus, if the raw wastewater
characteristics for plants within a group are similar, a uniform
effluent will result for a given wastewater treatment system for
that group.  Such a group is designated as a subcategory.  This
section presents the subcategories and discusses the  factors
considered as a basis for E&EC subcategorization.

Due to the breadth of the E&EC Category and the wide variety of
products manufcictured, subcategorization of the electrical and
electronic components is approached in three stages:

     1.  Identify the various product areas encompassed
         by the E&EC Category.  (Reference Table 3-1)

     2.  Identify those products using no wet processes
         in their manufacture and those products using
         wet processes that are covered by existing or
         projected regulations governing other point
         source categories.

     3.  Identify those products using wet processes that
         are unique to the manufacture of E&EC products
         and are not covered by existing or proposed
         regulations.  This latter group of products will
         be further investigated to establish a final set
         of subcategories, each of which has a uniform
         set of wastewater characteristics.

Several products may be excluded from this study because there is
no wastewater generated in their manufacture or the wastewater
produced is covered by other point source categories.  Table 4-1
presents the products that will be excluded from this document
because their manufacture is dry.  Products covered under other point
source categories are discussed in more detail in Section V of this
document and are also listed in Table 4-1.

Deleting those products whose manufacture does not utilize
manufacturing process water unique to E&EC manufacturing
results in the establishment of the following subcategories:
                              1V-1

-------
                        TABLE 4-1
                      E&EC PRODUCTS
     USING DRY PROCESSES OR NON-UNIQUE WET PROCESSES
Products whose manufacture uses only dry processes
 Product
 Capacitors; non metal case, paper, film or
   metallized film dielectric
 Incandescent lamps
   Reflector lamps
   Metal vapor lamps using glass envelopes
   Photoflash lamps
 Insulators, epoxy and phenolic

Products using wet processes addressed by other
Point Source Categories
 Transformer (dry)
 Switchgear
 Carbon and graphite brushplates
 Resistance heaters stove/oven burner units
 Small electric appliance
      Rigid, encased heaters
      Flexible heaters
      Bare wire heaters
 Electric comfort heaters
                         IV-2

-------
                            TABLE 4-1 Con't
                             E&EC PRODUCTS
           USING DRY PROCESS OR NON-UNIQUE WET PROCESSES

      Product

2.   Con't

      Other flexible heaters strips, bands, cables  ,

      Paper film or metallized film dielectric

      Household cooking equipment

      Electric motors and generators

      Industrial controls

      Welding apparatus

      Household refrigerators and freezers

      Household laundry equipment

      Electric housewares and fans

      Household vacuum cleaners

      Current carrying wiring devices

      Non-current carrying wiring devices            "._  i
                                                  ' •-  ' )
      Residential commercial, industrial, and institutional
        electric lighting fixtures

      Vehicular lighting equipment

      Phonograph records and prerecorded magnetic tape

      Telephone and telegraph apparatus

      x-ray tubes and equipment

      Electrical equipment for internal combustion engines

      Electrical equipment, machinery, and supplies not else-
        where classified
                               IV-3

-------
        Carbon and Graphite Products
        Dielectric Materials
        Electric Lamps
        Electron Tubes
        Semiconductors
        Capacitors

SUBCATEGORIZATION DEVELOPMENT

A study of the E&EC Category indicates that more than one subcategory
is required because of the variety of wastewater characteristics
generated by the manufacture of the different product types.  The
remainder of this section describes the subcategorization of E&EC
products to establish groupings such that each group has a uniform
set of wastewater characteristics.

After considering the nature of the E&EC products, the follow-
ing subcategorization bases were considered plausible:
     1.
     2.
     3.
     4.
     5.
     6.

Products
Products
Manufacturing Processes
Raw or Process Materials Used
Size of Plant
Age of Plant
Geographic Location
A review of each of these factors reveals that product type is
the principal factor affecting the wastewater characteristics of
plants within the E&EC Category.  Product type determines both
the raw and process material requirements and the number and type
of manufacturing processes used.  Groups of products using the same
wet processes produce wastewater with similar characteristics.  The
different products vary widely in wet manufacturing processes
used, and this results in major differences in the wastewater
characteristics associated with each product.  The major source
of wastewater results from clean-up and rinsing activities
associated with each of these manufacturing processes.  A product
subcategorization results in the following nine subcategories:
1.   Transformers
               Two types are manufactured, wet (filled
               with dielectric fluid) and dry.

               Both types use standard metal working
               and metal finishing processes covered
               by the Metal Finishing Category.

               Wet processes unique to the product are
               detergent dielectric fluid clean up and
               management of residual PCB fluids.
                             IV-4

-------
     Switchgear &
     Fuses
     Carbon &
     Graphite
4.   Resistance
     Heaters
5.   Electric Lamps -
All types use processes included in the
metal finishing and plastics processing
categories«

All wet processes used in the manu-
facture of switchgear and fuses are
addressed by the Metal Finishing
Category.

Products range from contacts and motor
brushes weighing ounces to metallurgical
electrodes weighing several tons.

Wet processes unique to the product are
extrusion and impregnation quenches used
at some plants manufacturing large
products.  Some plants also use contact
water in carbon machining and wet air
scrubber processes.

Three types of resistance heaters are
made; rigid encased elements used for
electric stoves and ovens, bare wire
heaters used in toasters and hair
dryers, and insulated flexible heater
wire that is incorporated into blankets
and heating pads.

All wet processes used in the manu-
facture of resistance heaters are in-
cluded in the Metal Finishing Category.

Five major product types are manufac-
tured:  incandescents, flash bulbs,
fluorescents, glow lamps, and lamp
parts.

Incandescent and flash bulb manufacture
use dry processes only.

Fluorescent lamp manufacture uses a wet
glass washing process.  In addition, a
few plants use a wet process to apply
phosphors.

Neon glow lamps use a lead cleaning pro-
cess using an acid cleaner and its sub-
sequent water rinses which are covered
by the Metal Finishing Category.  Some
quartz envelope vapor lamps receive a
final cleaning using an acid process.
                               IV-5

-------
6.
Dielectric
Materials
7.   Electron Tubes -
8.   Semiconductors -
                         Manufacture of lamp bases uses wet,
                         processes addressed by the Metal Finish-
                         ing Category.

                         Filament manufacture uses
                         a unique wet process to dissolve the
                         mandrels on which filaments are wound.
Three types of non-glass and non-
ceramic insulators are used:  mica,
epoxy, and phenolic.

Epoxy and phenolic insulators use no
wet processes.

Mica insulation manufacture is analogous
to paper making and uses a wet process
unique to the product.

Four basic types of electron tubes are
produced:  TV and cathode ray picture
tubes, receiving tubes, power tubes,
and light sensing tubes.

Receiving, power, and light sensing
tube manufacture uses' wet processes al-
ready addressed by the Metal Finishing
Category.

TV and cathode ray picture tube manu-
facture use the same metal finishing
processes as receiving, power, and light
sensing tubes in addition to wet pro-
cesses associated with glass etching,
photolithography, and phosphor
deposition.

The industry manufactures many different
types of devices used in electronic
circuitry.

Product types are based on several dif-
ferent material technologies.

Manufacture involves similar processes
for all products.  Many wet processes
are used such as wafer cutting and lap-
ping, fume scrubbing associated with
layer generation and doping, deposition
of conducting layers by evaporation,
application and removal of photolitho-
graphic masks, removal of layers by acid
etching, and preparation and use of
deionized water for rinsing.
                                 IV-6

-------
9.   Capacitors     -    Approximately a dozen type of capa-
                         citors are manufactured to cover a wide
                         range of sizes,^operating voltages,
                         and environments associated with
                         electric motors, electric power
                         handling, fluorescent lighting and
                         electronic equipment.

                    -    The different types require different
                         materials and processes.

                    -    Some types use all dry manufacturing
                         processes.  These are non-metal case
                         types using paper, film, or metallized
                         dielectrics.

                    -    Metal case versions of the above types
                         may use wet processes in the case
                         manufacture.  These processes are ad-
                         dressed by the Metal Finishing Category.

                    -    The remaining types use wet processes
                         unique to the product during the
                         manufacture of the electrodes and/or
                         dielectric and during encapsulation.

As can be seen from the above, product subcategorization does
not adequately address differences in raw wastes produced by
some processes within the same subcategory.  For example, in
the capacitor industry ceramic capacitors are manufactured  .
utilizing the same manufacturing processes as other capacitor
types except for the use of a ball milling operation.  This
operation produces wastes that differ from wastes produced by
other capacitor manufacturing.  These wastes also require
different treatment technologies for pollutant removal-.  For this
reason, two different wastewater treatment systems are required
to treat wastewaters from ceramic ball milling and from capacitor
manufacturing processes excluding ball milling.

Manufacturing Processes

Subcategorization by manufacturing process could adequately de-
fine waste characteristics for the E&EC Category.  However,
this subcategorization would be overly complex in determining
the waste loads and effluent limitations due to the number of
processes that exist in this category.  In addition, subcate-
gorization on the basis of manufacturing process is not uniquely
suited to define waste characteristics since many operations
generate the same waste constituents.

Subcategorization by both product type and by manufacturing
process is necessary in some instances in the E&EC Category.
                               IV-7

-------
This subcategorization basis will account for differences in
raw wastes produced by the subcategory without being overly complex,
This product/manufacturing process subcategorization results in
the following subcategories:

     1.   Transformers - The only wet processes that is unique
                         to E&EC are the clean-up and management
                         of residual dielectric fluid.  These
                         processes will be considered in the
                         dielectric materials subcategory.
2.


3.


4.


5.


6.
          Switchgear and Fuses - (no further subcategorization
                                 is necessary)

          Carbon and Graphite - quenching processes
                                machining processes
          Resistance Heaters - (no further subcategorization
                               is necessary)

          Electric Lamps - filament manufacturing
                           fluorescent lamp manufacturing
          Dielectric
          Materials
                       The only wet process that is unique to
                       E&EC is the manufacture of mica paper
                       dielectric.  Mica paper dielectric
                       manufacture will be included in the
                       dielectric materials subcategory.

     7.   Electron Tubes - electron tube manufacturing
                           aperture mask manufacturing

     8.   Semiconductors - (no further subcategorization is necessary)

     9.   Capacitors - ball milling operations
                       capacitor manufacture (excluding ball milling)
                       (Production of some types of capacitors in-
                       cludes the use of dielectric fluid.  This
                       dielectric fluid use will be included in the
                       dielectric materials subcategory).

Raw or Process Materials Used

There is a wide variation in basis materials, process materials,
and process chemicals used within this industry, and all waste-
water constituents are a direct result of this material usage.
Therefore, they are intrinsically accounted for since the selec-
ted product subcategories are directly related to the physical
and chemical properties of the raw materials used (e.g., basis
materials/ solvents, process chemicals).

Size of Facility

The nature of the manufacturing processes for the E&EC Category
is the same in all facilities regardless of their size.  Size
alone is an insufficient categorization criterion since the
waste characteristics of a plant depend on the raw materials and
the manufacturing processes employed.
                                IV-8

-------
 Age  of Facility

 The  relative  age  of plants  is  important but  is  not  a  suitable
 basis  for  categorizing  the  industry because  it  does not  consider
 those  items which affect  the effluent  wastewater discharged.   The
 age  of a plant  has no bearing  on  the resulting  wastewater  charac-
 teristics  or  the  required waste treatment.   Therefore, plant age
 is an  inappropriate basis on which  to  categorize.

 Geographic Location

 There  is not  a  basis for subcategorization by geograohic location
 alone.  Manufacturing processes are  not affected by the physical
 location of the facility, except  for availability of  usable
 process water.  The price of water may affect the amount of
 modification  to procedures  employed  in each  plant.  However,
 procedural changes  can affect  the volume of  pollutants discharged
 but  not the characteristics of the constituents.  The waste
 treatment  components described in Section XII can be  utilized  in
 any  geographical  area.  In  the event of a limitation  in the
 availability  of land space  for constructing  a waste treatment
 facility,  the in-process controls and  rinse  water conservation
 techniques described in Section XII  can be adopted  to minimize
 the  land space  required for the end-of-process  treatment
 facility.  Often, a compact package  unit can easily handle end-
of-process waste  if good in-process  techniques  are utilized to
conserve raw materials and water.

SUMMARY OF SUBCATEGORIZATION

The subcategorization of the E&EC industry is summarized as
follows:
     1.
Subcategorizing raw waste characteristics by product
type for unique water using processes not covered
under other point source categories produces tfie fol-
lowing subcategories:                        j

          Carbon and Graphite Products      <
          Dielectric Materials
          Electric Lamps
          Electron Tubes
          Semiconductors
          Capacitors
                              IV-9

-------
     2.   Further subcategorization by manufacturing process pro-
          duces the following subdivisions within the subcategories;

                    Carbon and Graphite Products
                         Quenching operations
                         Machining, grinding, scrubbing operations
               .    Dielectric Materials
                         Dielectric fluid use
                         Mica paper dielectric manufacture
               .    Electric Lamps
                         Fluorescent lamp manufacture
                         Filament manufacture
                    Electron Tubes
                         Electron tube manufacture
                         Aperture mask manufacture
               .    Semiconductors
                         (no further breakdown is required)
                    Capacitors
                         Capacitor manufacturing operations
                           excluding ball milling
                         Ceramic ball milling operations

Some manufacturing processes used in the manufacture of E&EC
products are covered under existing or proposed regulations
while other processes used in the manufacture of the same
products are unique to this industry.  The discussion of all of
these processes is found in the appropriate product subcategory
sections which follow.
                              IV-10

-------
                          SECTION  V

                   DRY  PRODUCTS  SOBCATEGORY
INTRODUCTION
The dry products  subcategory  includes  those  electrical  and
electronic  components  that do not  require  manufacturing process
water unique  to the  E  &  EC industry.   Rather,  any  process waste-
water results  from manufacturing operations  in the Metal Finishing
Category.   Electronic  products considered  in this  dry products
subcategory are:

          Switchgear and Fuses
          Resistance Heaters
          Ferrite Electronic  Parts
          Motor and Generators
          Fuel Cells
          Alternators
          Insulated Wire and  Cable, Non-ferrous

Sources of  information for this subcategory  include phone surveys
of plants in the various product areas and literature reviews.

This section includes discussion of the various products, size
of the industry, manufacturing processes and materials  used, and
process water usage.  A table  is presented for each product area
which summarizes the manufacturing processes and basis  materials
used.

SWITCHGEAR  AND FUSES

Products

The switchgear industry manufactures products  used  to control
electrical  flow and to protect equipment from  electrical power
surges and  short circuits.  The major switchgear products are:

          Electrical power distributors, controls,  and
          metering panel assemblies.

          Circuit breakers - Circuit breakers /are  automatic
          load sensitive switches used to protect  equipment
          from short circuits  and power surges by  dis-
          connecting the equipment from the power  source.
          Circuit breakers may be of the arq quenching
          (air or gas)  or oil  filled quenching types.

          Relays - Control relays (low voltage), power  relays
          (high voltage), and  magnetically abtuated  switches.
                                V-l

-------
           Switches - Manual current controlling devices.

           Puses - Electronic current controlling devices.
           Unlike circuit breakers, they may be used only once.

 Size of Industry

 Switchgear manufacture is classified under SIC 3613.  It is
 estimated that approximately 84,000 production workers are employed
 in the manufacture of switchgear and that between 572 and 678 manu-
 facturing firms are engaged in this business.  The mean
 employment level is estimated to be 135 production employees per
 plant.  Employment levels in the plants contacted range from 35
 to 2,500 production employees.

 Manufacturing Processes and Materials

 Table 5-1 is a listing of switchgear products and typical manu-
 facturing processes.  This information was gathered from actual
 plant visits and phone surveys of 24 switchgear manufacturers.
[ No wet manufacturing processes unique to the manufacture of
I switchgear have been identified.  The manufacture of oil-filled
' circuit breakers does not involve wet processing.  The use of
I this circuit breakerioil, a petroleum based, naphthenic dielectric
ji fluid, is covered in'the dielectric fluids Section VI of this
; report.

 Process Water Usage

 All switchgear manufacturing processes involving  the use or dis-
 charge of process water are metal finishing processes.  These
 processes and associated water and wastewater are therefore covered
 by the Metal Finishing Category Development Document and will not
 be discussed further in this report.

 RESISTANCE HEATERS   !

 Products

 Resistance heaters convert electrical energy  into usable heat
 energy,
The major resistance heater products are:

 Rigid, metal encased heater elements which are
 used in stoves, ovens, and small appliances.

 Bare wire heaters which are used in toasters
 and space heaters and utilize a wire or
 ribbon to 'convert the electrical energy to heat.
                                 V-2

-------
                               TABLE 5-1
    PROCESSES AND MATERIALS USED  IN SWITCHGE^R AND FUSE MANUFACTURE
PRODUCT

Circuit Breakers



Buss Bars


Fuses



Switches
Regulators
(Voltage, Power)
Assemblies
Enclosures
METAL, FINISHING PROCESSES

Chemical Milling, Stamping,
Milling, Molding, Assembly
Chemical Milling, Assembly,
Stamping, Molding, Grinding

Chemical Milling, Electroplat-
ing, Assembly, Milling,
Molding, Soldering, Machining

Conversion Coating, Plating,
Chemical Milling, Milling,
Stamping, Machining, Grinding,
Assembly

Chemical Milling, Electroplat-
ing, Grinding, Welding,
Soldering, Machining,
Polishing, Assembly

Chemical Milling, Electroplat-
ing, Conversion Coating,
Grinding, Welding, Soldering,
Solvent Degreasing, Machining,
Painting, Polishing

Chemical Milling, Electroplat-
ing, Conversion Coating,
Welding, Soldering, Solvent
Degreasing, Machining,
Assembly, Polishing, Grinding
BASIS MATERIALS

Plastic, Steel, Cooper,
Brass, Aluminum,
Nickel, Zinc

Copper, Aluminum, Brass
Copper, Brass, Plastic,
Steel
Steel, Copper, Brass,
Zinc      '
Copper, Brass, Steel,
Plastic
Aluminum, Steel, Zinc,
Plastic, Fiberglass
Steel, Aluminum,
Plastic
                                    V-3

-------
          Flexible insulated wire heaters which are used
          in electrical heating cables, electric heating
          pads, and electric blankets.
                                      s-     '   '   '
Size of Industry

Resistance heater manufacture consists of portions of SIC 3631,
Household Cooking Equipment and SIC 3634, Electric Housewares
and Pans.  It is estimated that approximately 11,000 production
workers are employed in the manufacture of resistance heaters
and that between 154 and 160 plants are engaged in this business.
The mean employment level is estimated to be 71 production employees
per plant.  However, review of plant listings indicates that in the
majority of plants, the manufacture of resistance heaters is an
integral part of the manufacture of another finished product.  Re-
latively few plants manufacture resistance heaters as their final
product.

Manufacturing Processes and Materials

Table 5-2 is a listing of resistance heater products and typical
manufacturing processes.  This information has been gathered from
phone surveys of 10 plants.  No manufacturing processes unique to
the manufacture of resistance heaters have been identified.

Process Water Usage

All resistance heater manufacturing processes involving the use or
discharge of process water are metal finishing processes.  These
processes and associated water and wastewater are therefore
covered by the Metal Finishing Category Development Document and
will not be discussed further in this report.

FERRITE ELECTRONIC PARTS

Products

The ferrite electronic parts subcategory includes electronic
products utilizing metallic oxides.  The metallic oxides have
ferromagnetic properties that offer high resistance, making cur-
rent losses extremely low at high frequencies.  Ferrite electronic
products include:

     .    Magnetic recording tape
          Magnetic tape transport heads
     .    Electronic and aircraft instruments
          Microwave connectors and components
     .    Electronic digital equipment
                               V-4

-------
                               TABLE 5-2
    PROCESSES AND MATERIALS USED IN RESISTANCE HEATER MANUFACTURE
PRODUCT

Rigid
Heater
Elements
Bare Wire
 Heaters

Flexible Insulated
Wire Heaters
METAL FINISHING PROCESS

    Plating, Chemical Milling,
    Welding, Rolling, Molding,
    Swaging, Machining
    Plating, Soldering,
    Welding

    Plating, Descaling,
    Machining, Molding, Welding
BASIS MATERIALS
     Steel, Nickel, Copper,
     Plastic, Insulating
     Material, Ceramic
     Material

     Steel, Nickel, Copper,
     Insulating Material

     Copper, Steel, Nickel,
     Rubber, Plastic,
     Insulating Material
                                  V-5

-------
Size of Industry

Perrite electronic parts manufacture is classified under SIC 3679,
It is estimated that 10,000 production workers are employed in
ferrite electronics parts manufacturing.  Between 35 and 40
manufacturing firms are engaged in this business.  The mean
employment level is estimated to be 270 production employees
per plant.

Manufacturing Processes and Materials

Table 5-3 is a listing of ferrite products and typical manu-
facturing processes.  The information presented was gathered
from the literature and a phone survey of 10 facilities.
Process Water Usage

Ferrite manufacturing processes and associated water usage
and wastewater generation are covered  in the Metal Finishing
Category Development Document and will not be discussed  further
in this report.

MOTOR AND GENERATORS

Products

The motor manufacturing industry produces devices that convert
electric energy into mechanical energy.  The generator manufactur-
ing industry produces devices which convert an input mechanical
energy into electrical energy.  The major motor  and generator
products are:

          Electric motors and generators
          Motors and generators
          Variable speed drives and gear motors
     .    Fractional horsepower motors
          Hermetic motor parts
     .    Appliance motors
     ,    Special purpose electric motors

Size of Industry

Motor and generator manufacture is classified under SIC  3621.  It
is estimated that 75,100 production workers are  employed in  the
                               V-6

-------
                            TABLE 5-3
               PROCESSES AND MATERIALS USED IN
            FERRITE ELECTRONIC PARTS MANUFACTURE
PRODUCT

Magnetic Recording
 Tape

Magnetic Tape
 Transport Heads
Electric and Air-
 craft Instruments
 Electronic Digital
 Equipment, Microwave
 Connectors and Com-
 ponents
  PROCESSES

Shearing, Slitting,
Assembling

Metal Producing,
Welding, Fabrication,
Machining

Forming, Shearing,
Slitting, Fabrica-
tion, Machining
   BASIS MATERIAL

Aluminum, Magnesium,
Castings, Stampings

Bronze, Brass,
Aluminum Extrusions,
Epoxies-quartz

Aluminum Reels, Iron
Rods & Bars, Tubing,
Extrusions
                                   V-7

-------
manufacture of motors and generators.  The 1977 Census of
Manufactures lists 448 manufacturers of motors and genera1
tors.  The mean employment level is estimated 'to be 170 pro-
duction employees per plant.

Manufacturing Processes and Materials

Table 5-4 is a listing of motor and generator products and typi-
cal manufacturing processes.  The information was gathered
from phone surveys of 11 motor and/or generator manufacturers
and from a literature investigation.

Process Water Usage

All motor and generator manufacturing processes involving the
use or discharge of process wastewater are metal finishing pro-
cesses.  These processes and associated water usage and waste-
water generation are covered by the Metal Finishing Category
Development Document and will not be discussed further in this
report.

FUEL CELLS

Products

The fuel cell industry manufactures products that are electro-
chemical generators in which the chemical energy from a reaction
of air (oxygen) and a conventional fuel is converted directly
into electricity.

The major fuel cell industry products, basically in research and
development stages, are:

          Fuel cells for military applications (Low power
          equipment, < 10 kW)

          Fuel cells for power supply for vehicles
          (Medium power sources, 10 to 150 kW)

          Fuel cells used as high power sources,
          > 150 kW for:

          - railway traction, including shunting engines
          - naval propulsion
          - power stations, basic and emergency
          - space applications
                             V-8

-------
                            TABLE  5-4
PROCESSES AND MATERIALS  USED  IN  MOTOR  AND  GENERATOR MANUFACTURE
PRODUCT
Appliance Motors
Special Purpose
Electric Motors,
Electric Motors,
Fractional Horse-
power Motors, Her-
metic Motor Parts
Motors and
Generators,
Variable Speed
Drivers and Gear
Motors
          PROCESSES

Casting, Forging, Stamp-
ing, Blanking, Drawing,
Shearing, Slitting,
Welding, Heat Treating,
Surface Fnishing,
Assembly, Machining

Casting, Stamping,
Blanking, Drawing, Shear-
ing, Slitting, Forming,
Welding, Machining, Heat
Treating, Assembly

Die Casting, Stamping,
Blanking, Drawing,
Shearing, Welding,
Machining, Heat Treat-
ing, Surface Finishing,
Assembly

Casting, Stamping,
Blanking, Drawing,
Shearing, Slitting,
Machining, Assembly
   BASIS MATERIALS

Carbon Steel Alloys
and Tool Steel,
Copper Wire, Aluminum,
Iron Sheets
Carbon Steel Sheets,
Rods, Bars, Strips,
Coils, Stainless Steel
Rods and Bars, Copper
Wire

Aluminum Casting Sheets,
Iron Castings, Steel
Plates, Slabs, Rods,
Bars, Carbon Steel Rods,
Bars, Strips, and Coil
Carbon Steel Sheets,
Rods and Bars
                                 V-9

-------
          Low temperature - low pressure fuel cells with
          carbon electrodes

Size of Industry

The fuel cell industry is classified under SIC 3674 (Solid State
Fuel Cells) and SIC 3629 (Electrochemical Generators).  It is
estimated that 1000 to 5000 production workers are employed
in the manufacture of fuel cells under SIC 3629.  The number
of employees under SIC 3674 is unavailable.  Between 5 and 10
manufacturing firms are engaged in the production of fuel cells.
The mean employment level is estimated to be 500 production
employees per plant.

Manufacturing Processes and Materials

Table 5-5 is a listing of fuel cell products and typical manu-
facturing processes.  The information presented was gathered from
phone surveys of 3 fuel cell manufacturers and from a literature
survey.

Process Water Usage

All fuel cell manufacturing processes involving the use or dis-
charge of process wastes are metal finishing processes.  These
processes and associated water usage and wastewater genera-
tion are covered by the Metal Finishing Category Development
Document and will not be discussed further in this report.

ALTERNATORS

Products

The alternator industry manufactures products that convert
mechanical energy into electrical energy in  the form of an
alternating current.

The major alternator products are:

          Electric equipment for internal combustion engines
          Automobile electrical parts
          Flywheel alternators, solid state  voltage regulators,
          overvoltage controls

Size of Industry

Alternator manufacture is classified under SIC  3694.  It is
estimated that 8750 production workers are employed in the manu-
facture of alternator products.  Between 65  and 75 manufacturers
are engaged in this business.  The mean employment level is
estimated to be 125 production employees per plant.
                              V-10

-------
                            TABLE 5-5
   PROCESSES AND MATERIALS USED  IN FUEL CELL MANUFACTURES
PRODUCT

Low Temperature -
Low Pressure Fuel
Cells with Carbon
Electrode
Fuel Cells Used
as High Power
Sources for Mili-
tary Applications,
as Power Supply for
Vehicles
     PROCESSES

Extrusion, Gas-baking,
Heat treating, Testing,
Assembly, Molding,
Catalyzation with Heavy
Metals Salts, Sintering
Machining, Heat Treating,
Sintering, Molding,
Carbonizing, Testing,
Assembly
   BASIS MATERIALS

Base Carbo-n, Binders
Metal (oxide) Cata-
lysts, Wax or Paraffin
Compounds, Chlorapla-
tinic Acid, Teflon,
Polyethylene, Nickel,
Plastics

Graphite, Resins,
Plastic, Teflon,
Electronic Components,
Cutting Fluids
                                 v-n

-------
Manufacturing Processes and Materials

Table 5-6 is a listing of alternator products and typical
manufacturing processes.  The information presented was gathered
from a literature survey and phone survey of 7 alternator
manufacturers.

Process Water Usage

All alternator manufacturing processes involving the use or dis-
charge of process waters are metal finishing processes.  These
processes and associated water usage and wastewater genera-
tion are covered by the Metal Finishing Category Development
Document and will not be discussed further in this report.

INSULATED WIRE AND CABLE, NON-FERROUS

The insulated wire and cable industry manufactures products where
a conductor is covered with a non-conductive material to eliminate
shock hazard.  The major insulated wire and cable industry pro-
ducts are:

          Insulated non-ferrous wire
          Drawn and tinned copper wire
          Auto wiring systems
          Magnetic wire
          Bulk cable appliances
          Marine cable appliances
          Marine wiring
          Camouflage netting
          Fine insulated wire

Size of Industry

The insulated wire and cable industry is classified under SIC 3357,
Estimates of the number of employees and the number of firms
manufacturing insulated wire and cable are not available.

Manufacturing Processes and Materials

Table 5-7 is a listing of insulated wire and cable products and
typical manufacturing processes.  The information presented was
gathered from a literature survey and phone survey of 8
insulated wire and cable manufacturers.
                           V-12

-------
                            TABLE 5-6
   PROCESSES AND MATERIALS USED  IN ALTERNATOR MANUFACTURE
PRODUCT

Electric Equipment
for Internal Com-
bustion Engines
Auto Electrical
Parts
Flywheel Alterna-
tors, Solid State
Voltage Regulators,
Overvoltage Controls
   PROCESSES

Stamping, Blanking,
Drawing, Welding,
Fabricating, Machining,
Heat Treating, Surface
Finishing, Assembly
Stamping, Blanking,
Drawing, Fabrication,
Assembly

Casting, Stamping,
Blanking, Drawing,
Welding, Fabrication,
Machining, Heat Treat-
ing, Surface Finishing,
Assembly
    BASIS MATERIALS

Carbon Steel Sheets,
Rods, Bars, Tubing
and Pipe,  Stainless
Steel, Brass-Bronze,
Aluminum, Iron Rods,
Zinc Ingots, Mica
Paper

Steel Sheet, Copper
Wire, Brass Rods
and Sheets

Carbon Steel Rods,
Bars, Strips, and
Coils; Aluminum
Ingots, Pigs, Bullets,
Strips and Coils;
Zinc Ingots
                               V-13

-------
                            TABLE 5-7
         PROCESSES AND MATERIALS USED IN INSULATING
                 WIRE AND CABLE MANUFACTURE
PRODUCT

Drawing & Insulat-
ing of Non-Ferrous
Wire, Camoflage Net-
ting, and Fine insu-
lated Wire

Drawing and Tinning
Copper Wire and
Insulated Male
Cable

Auto Wiring Systems,
Magnet Wire, Marine
Wiring and Insulated
Bulk Cable
Appliances
   PROCESSES
                                                  BASIS MATERIALS
Drawing, Spot Welding    Copper Wire
Drawing, Stranding,
Heat Treating
Die Casting, Stamping
Blanking, Drawing,
Shearing, Slitting,
Forming, Welding, Heat
Treating, Assembly
Carbon, Stainless
Steel, Steel, Copper
Carbon Steel, Brass-
Bronze Strips, Coils,
Stainless Steel-Wire,
Copper-Rods and Bars,
Aluminum Wire
                                   V-14

-------
Process Water Usage

All insulated wipe and cable manufacturing processes  involving
the use or discharge of process waters are metal  finishing
process.  These processes and associated water  usage  and  waste-
ewater generation are covered by the Metal Finishing  Category
Development Document and will not be discussed  further  in this
report.
                                V-15

-------

-------
                             SECTION VI
               CARBON AND GRAPHITE SUBCATEORY
INTRODUCTION

This discussion of the Carbon and Graphite subcategory consists of
the following major sections:

     Products
     Size of Industry
     Manufacturing Processes
     Materials
     Water Usage
     Production Normalizing Parameters
     Waste Characterization and Treatment in Place
     Potential Pollutant Parameters
     Applicable Treatment Technologies
     Benefit Analysis

Data contained in this section were obtained from several sources.
Engineering visits were made to 6 plants within the subcategory.  Of
these 6 plantst wastewater samples were collected from four of these
facilities.  A total of 16 Carbon and Graphite plants were contacted
by telephone in this survey.  A literature survey was also conducted
to ascertain differences between types of Carbon and Graphite products,
process chemicals used, and typical manufacturing processes.

PRODUCTS

Elemental carbon in its amorphous and anisotropic crystalline forms
exhibits unique electrical, thermal, physical, and nuclear proper-
ties.  Manufacturing techniques permit control of these properties
over very wide ranges.  Thus, both carbon (the amorphous form) and
graphite (the anisotropic crystalline form) are used, in hundreds
of products manufactured for use by many industries.  Most carbon
and graphite produdts are electrical conductors of one form or
another; hence, the manufacture of most carbon and graphite pro-
ducts is included within the E&EC Category.

The major carbon and graphite product areas are carbon electrodes
for aluminum smelting and graphite furnace electrodes for electric
steel production.  Carbon electrodes for aluminum smelting are made
primarily by the aluminum industry for consumption within that
-industry.  Their manufacture is covered by existing regulations for
the aluminum industry.
                                VI-1

-------
 Graphite  furnace electrodes  for electric steel production  are  made
 by the  carbon and graphite products  industry.   In addition to
 graphite  furnace electrodes, th*is  study of the Carbon and  Graphite
 subcategory also includes  the following products:

      .     Graphite molds and crucibles  for metallurgical
           applications.

           Graphite anodes  for electrolytic cells  used for  produc-
           tion of  materials such, as  caustic soda, chlorine,
           potash, and  sodium chlorate

           Carbon and graphite for  structural,  refractory,  nuclear,
           and other non-electrical applications

      .     Carbon and graphite brushes,  brush stock contacts  and
           other products for electrical applications  (Brushes  are
           used to make continuous  electrical contact  between ro-
           tating and stationary members of electrical machines)

           Carbon and graphite specialties  such as jigs and fixtures,
           battery carbons, seals and rings, and rods  for electric
           arc lighting,  welding, and metal cutting

 Carbon  and graphite products are contained in  SIC 3624.  The major
 subclassifications of  SIC  3624 are electrodes  for electric furnace
 and electrolytic cell  use  and carbon and graphite products (except
 electrodes).   Carbon and graphite  products include brushes,  elec-
 trodes  and other carbon  and  graphite products  (electrical, mechan-
 ical, aerospace,  nuclear,  metallurgical and refractory).

 SIZE OF INDUSTRY

 The size of  the  Carbon and Graphite  subcategory is presented in the
 following  paragraphs in  terms  of number of plants,  number  of produc-
 tion employees,  and production rate.  Each of  these figures  represent
 an estimate  based  upon data  collected from visited facilities, tele-
 phone surveys,  and  literature  surveys.

 It is estimated  that approximately 70 plants are  engaged in  the manu-
 facture of  carbon  and  graphite products.   These estimates  are  based
 upon the 1977  Dun and  Bradstreet listing of companies  engaged  in
 business in  SIC  3624.  Known non-manufacturing firms  (distributors)
 and known  manufacturers  of non-carbon and  graphite products  (brush-
plates)  were  removed  from the listing.  From  this  modified  lis-
 ting, 70 plants  are estimated  to be  engaged in the manufacture of
 carbon and graphite products.
                                Vl-2

-------
The Department of Commerce 1977 Census of Manufactures (Preliminary
Statistics) was also reviewed.  After removal of plants believed to
be engaged in the manufacture of non-carbon and graphite products
(brushplates), 70 plants were estimated to be engaged in the manu-
facture of carbon and graphite products.

The Department of Commerce 1972 Census of Manufactures was also
compared to the above sources.  70 plants were estimated to be
engaged in the manufacture of carbon and graphite products.

Number of Employees

It is estimated that between 8,300 and 9,000 production employees
are engaged in the manufacture of carbon and graphite products.
These estimates are based on the Department of Commerce 1972 Census
of Manufactures which lists 8,600 production employees engaged in
the manufacture of carbon and graphite products and on the Depart-
ment of Commerce 1977 Census of Manufactures Preliminary Statistics
which lists 9,000 production employees.  Employees believed to be
engaged in the manufacture of non-carbon and graphite products
(brushplates) were subtracted from the total number of production
employees listed in the SI-C.  The resulting estimate based on the
1977 census is that approximately 8,300 employees are engaged in
the manufacture of carbon and graphite products.

Typical plants either surveyed by telephone or visited have numbers
of production employees ranging from 30 to 800.  The majority of
plants employ between 60 and 350 production employees.  Only six
plants employ more than 300 production employees*

Production Rate

Total production of carbon and graphite products is not available.
However, the following partial information is presented from the
Department of Commerce 1977 Census of Manufactures  (Preliminary
Statistics) to profile the industry:
Electrodes for electric
and electrolytic cell use

     Carbon

     Graphite

All other carbon and
graphite products

Other products not
elsewhere classified
                                    Millions of Kg.
                                    Per Year (1977)
782.76 (355.8)

832.48 (378.4)


    N/A


    N/A
                     % Total Annual
                     Dollar Value (1977)
12%

42


44
                               VI-3

-------
A  typical medium  sized  plant,  employing  260  production  workers  and
360  total people,  produces  15,800  metric tons/year  of large  carbon
and  graphite  electrodes.  A typical  large plant,  employing 650  to-
tal  employees, produces 68,000 metric  tons/year of  graphite.

MANUFACTURING PROCESSES

Due  to  its high triple  point,  3750 _+ 50°C and  125 + 15  atm,  carbon
cannot  be melted  and  cast to form  finished products.  At  ambient
pressure carbon does  not melt; it  sublimes (at 3370 4- 25°C).  Thus
the  manufacturing  process for  carbon and graphite products is one
of aggregating small  particles together,  followed by heat treating
to develop the desired  microstructure  and physical  properties.

Carbon  products,  called "baked carbon" in the  industry, require
baking  at approximately 1000°C.  Graphite products  also known as
"synthetic graphite", "graphitized products",  or  "electrographite",
require one or more additional heat  treating cycles at  high  tempera-
tures to develop  the  anisotropic crystalline structure  that  is
unique  to graphite.   This process  is called  "graphitizing".

The  flow of materials and the  major  unit operations in  the produc-
tion of baked carbon  and electrographite are presented  schematically
in Figure 6-1.  This  schematic most  closely  defines the process for
producing carbon or graphite of large  dimensions  for molds,  struc-
tural,  and furnace electrode applications.   Many  of the steps out-
lined are also followed in  producing different grades of  material
for  special applications, such as  anodes and motor  brushes.

The process starts with weighing the required  quantities  of
calcined carbon filler,  binders and  additives; combining  them as
a batch in a  heated mixer;  and then  forming  the resulting "green"
mixture by compression  molding or  by extrusion.   In some  plants
green carbon  forms are  quenched in large water-filled tanks  to
harden  the material for subsequent handling.   Following inspection
and  testing for defects, acceptable  green bodies  are readied for
baking.

Green bodies  are carefully  packed  in materials such as  sand,
coke granules, or  charcoal.  Packing supports  the green body (which
softens during the early stages of baking),  distributes heat more
uniformly, absorbs excess tar  or pitch binder, and  protects  the
green bodies  from oxidation.   Baking takes place  within a gas or
oil fired furnace, reaching a  peak temperature of approximately
1000°C.  The process  continues for several weeks.   When the
furnace has cooled down to  approximately 400°C, the resulting
baked carbon bodies are unpacked,  stripped of  packing material,
and cleaned.
                               VI-4

-------
                                       Raw  Materials
Process  Materials
   Extrusion Aids
       Water
       Packing
                                                   Extrusion
                                                  Or Molding
       	•—- Denotes Wastewater Flow Path
                                FIGURE 6-1
               PRODUCTION OF CARBON AND GRAPHITE SUBCATEGORY
                                  VI-5

-------
 Baked carbon is one of the most difficult refractory materials to
 machine.   It is hard, brittle and very abrasive,  owing to small
 carbide inclusions formed from impurities during  the baking
 process.   Hence, manufacturing to final shape and finish is
 performed  by grinding with'diamond wheels.  Cooling and dust
 control are achieved either by air pickup with bag-house filtering
 or by wet  grinding using contact cooling water.

 For graphite production the baked carbon is  placed in an electric
 furnace.   The baked carbon is packed  with metallurgical coke,
 graphite or charcoal to facilitate current flow at the
 start of heating.  As the temperature rises, the  baked carbon
 itself becomes the resistor material.  Peak  temperature is
 controlled to 2700 + 500°C,  the precise value having an important
 effect on  the physical and electrical properties  of the final
 product.   Duration of the graphitizing process is approximately
 two weeks.  After unpacking, finished graphite is allowed to air
 cool to room temperature.  The density of electrographite can  be
 increased  by impregnating the graphite with  such  materials as
 coal tar pitch or petroleum oil, either prior to  or subsequent to
 initial graphitizing, and then recycling through  the graphitizing
 furnace.   Impregnation generally occurs in a pressure or vacuum
 autoclave.  In some plants the impregnated material is quenched in
 water-filled tanks to facilitate subsequent  handling.

 The resulting graphite is soft and nonabrasive.  It can be machined
 with conventional wood working or metal working tools.  Machining
 lubricants are unnecessary and undesirable,  because the porosity
 of  the graphite may cause absorption  of the  lubricants which would
 alter the  electrical characteristics  of the  piece.

 MATERIALS

 Materials  required to manufacture carbon and graphite products
 may be classified as raw materials and process materials.   Raw
 materials,  which generally become part of the product, may be
 subdivided  into fillers,  binders,  additives,  and  impregnants.
 Process materials  such as  packing materials,  contact water,  and
 extrusion  aids  do not generally enter the product,  but they are
 necessary  to  perform certain  operations.


 Filler Materials

 Several different  raw carbon  filler materials are  used depending
on  the product  to  be  manufactured.  These filler materials  are:


      .     Petroleum  Coke  - A  byproduct  of petroleum cracking,
          petroleum  coke  is a  refining  residue  from which  most
                              VI-6

-------
Binders
          of the volatiles have been driven off.  Formation of
          crystallites during coking promotes subsequent graphi-
          tizing.  Petrole-im coke still contains approximately
          5 to 15% volatile organics.  These must be driven off
          by calcining prior to mixing with the other raw materials.

          Anthracite Coal - Anthracite coal is used for baked
          carbon products only, not for graphitized products.
          Ash content must be reduced from 12% to approximately
          6%r which is generally achieved by washing or other
          benefincation processes, including electric calcining.

          Wood Charcoal - Used for specialty carbon products and
          brushes, wood charcoal imparts desirable high electrical
          contact resistance to carbon compositions.  Wood charcoal
          does not graphitize.

          Carbon Black - A product of incomplete petroleum
          combustion, carbon black is used in a wide variety of
          carbon and graphite products, especially brushes.

          Natural Graphite - Used to increase the density and
          conductivity of carbon and graphite formulations, natural
          graphite is used as a filler in brushes and other
          products.  Natural abrasives, which are always present,
          are useful in controlling the self-cleaning action of
          brushes.

          Pitch Coke - The result of coking coal tar pitch, pitch
          coke is higher in ash content and is more abrasive than
          petroleum coke.  Its use is limited to specialty carbon
          and graphite products.
Binder materials are^used to cement the aggregated filler material
particles together during the "green" stage.  Binder materials are
required to bond with carbon during the baking process to con-
tribute to the uniformity of the microstructure of the finished
product.  Binder materials include:

          Coal Tar Pitch - A byproduct of coal tar distillation
          and the production of metallurgical coke, coal tar
          pitch is the primary binder used in the manufacture of
          carbon and graphite products.

          Phenol Formaldehyde - This and other related thermo-
          setting plastics are used in applications where
          extra durability is required.
                                VT-7

-------
 Additives

 Additives  are  used  to  alter  the  electrical  and  physical  properties
 of  the  product.   They  are  non-carbonaceous  and  include:

      .     Sulfur  -  Sulfur  is sometimes  used to  dehydrogenate  the
           binder  to promote  coking  of the binder.

           Iron Oxide - Iron  oxide is used to limit  volumetric
           expansion during graphitizing to  help avoid  structural
           defects.

           Metals  -  Silver  or copper powders are used to  increase
           electrical conductivity of certain brush  and electrical
           contact formulations.

 Impregnants

 Impregnants are sometimes  applied to graphite products prior  to final
 graphitizing to increase density and reduce porosity.  Impregnants
 include:

           Coal Tar  Pitch - Coal  tar pitch is the most common
           impregnant used.   Impregnant  grades of pitch are  less
           viscous and  have lower melting points than binder pitches,
           but  they  are  derived from the same sources.

      .     Oils -  Petroleum oil is also  used as  an impregnant  because
           of its  low viscosity,  low melting point,  and absence of
           solid particles.   Other oils  are  used in  some  plants to
           control the  off  gassing of volatiles  into the  atmosphere
           during  this process.

Process Materials

Packing materials,  extrusion  lubricants, contact water,  and scrubber
water comprise the  process materials used in  the manufacture  of carbon
and graphite products.

           Packing Materials— "Green" body packing materials
           consist of sand, charcoal, and granulated coke.  They
           are used  singly or  in  combination to  support the green
           body during baking, to protect the  body from oxidation,
           and to distribute the  furnace heat  uniformly.

           Graphitizing  furnace packing materials consist of
           graphite, metallurgical coke, and  charcoal.  They are
           used to protect against oxidation  and to  conduct  furnace
          current during initiation of heat-up.
                               71-8

-------
          Extrusion Lubricants - Small quantities of materials
          such as petroleum oil may be added to the green mixture
          to facilitate extrusion.

          Contact Water - Contact water is used in some plants
          to quench the hot green carbon after extrusion.
          Contact water may also be used to quench hot baked
          carbon following its impregnation with graphitizing
          materials.

          Contact water may also be used in conjunction with the
          final machining and finishing of baked carbon products.
          The water is used for flushing chips and for cooling
          the diamond grinding wheels.

          Scrubber Water - One visited facility re~processes the
          baking oven packing sand by air scrubbing the carbon
          from the sand.  The carbon-laden air is subsequently
        .  scrubbed of carbon particulates with a wet air scrubber.

WATER USAGE

Prom the 1972 Census of Manufactures, gross water usage is estimated
to be 102.2 million liters per day (27 million gallons per day) for
the carbon and graphite products industry.  Based on plants visited,
approximately 58% is recycled and 42%, or 42.8 million liters per
day (11.3 million gallons/day), is discharged.  Process water is
approximately 18% of the gross water usage, or 18.5 million liters
per day (4.9 million gallons/day).  (The remaining 82% includes sanitary.
use, boiler blowdown, etc.)  Process water use appears to be unevenly
divided over the 70 plants estimated to be involved in carbon and
graphite production.  Many smaller plants, employing up to approxi-
mately 150 total employees, report no use of contact cooling water
at all.  Five visited medium and large plants reported contact
water in amounts ranging between approximately 302,000 and 2,650,000
liters per day (80,000 to 700,000 gallons per day).  This contact
water use includes the use of wet air scrubber water at one visited
facility.

Wastewater

Of the 42.8 million liters/day (11.3 million gallons/day) discharged,
it is estimated that approximately 14.4 million liters/day (3.8 mil-
lion gallons/day) are treated, and the balance is discharged untreated,
Treatment is not consistent in the carbon and graphite products indus-
try.  Observations regarding treatment from six visited plants are
summarized in Table 6-1.
                                 VX-9

-------
                0) 01
g

01
01
CT
Vl
<0

u
01
Q






e E .e
(0 (0 <0
4) 3 « 0)
vi 15 vi vi
*j o *• *"
CO S COW
S1?

                                                                 (A

                                                                 o
                        •o


                        I

                        01
                        e
                                                                              4J
                                                                              ai
                                                                              CO
     o
     o
000
o o  •«
                 01 O


                 Q 10
                        a
                        o
                        o
             O  10 10
             o  > >
             « W M
           O
           o
           o

           f>
           r-
                                           o
                                           o
o
o
•O
01

O 
   u
vi o
o
o
o
ro in r- vo


veaa in
             vo o m
             m M IH
                        m

                        •H
                        VO
                                   VO
                                   n
                              o
                              o
                              m
           in
           en
           o
           o
           m
        vo
        o
        vo
        in
vo
o
vo
in
£

 M n

 II
U 0)
 X 3
UO
              O
              IO

              OljS

              0)  U
              vi  c
              a oi
              E  3 ,
              M O
•a

•a

IT

•M e"
C-H
 (0 VI
EC
                         a-.

                        •H
                        ja
                        JQ

                         Vl
                         o
                        CO
                                    VI-10

-------
PRODUCTION NORMALIZING PARAMETERS

Production normalizing parameters are used to relate the pollutant
mass discharge to the production level of a plant.  Regulations expres-
sed in terms of this productiqn normalizing parameter are multiplied
by the value of this parameter at each plant to determine the allowable
pollutant mass that can be discharged.  Meaningful production
normalizing parameters that have been considered for Carbon and
Graphite industry include:

          Size, complexity and other product attributes that
          affect the amount of pollution generated during
          manufacture of a unit.

          Manufacturing processes, but differences in pro-
          cesses for the same product result in differing
          amounts of pollution.

          Production records, but lack of applicable data
          may impede determination of production rates in
          terms of desired normalizing parameters.

Several other broad strategies that have been developed to determine
normalizing parameter are as followsj


          The process approach - In this approach, the production
          normalizing parameter is a direct measure of the produc-
          tion rate for each wastewater producing manufacturing
          operation.  These parameters may be expressed as sq.m.
          processed per hour, kg of product processed per hour,
          etc.  This approach requires knowledge of all the wet
          processes used by a plant because the allowable pollu-
          tant discharge rates for each process are added to
          determine the allowable pollutant discharge rate for
          the plant.  Regulations based on the production norma-
          lizing parameter are multiplied by the value of the
          parameter for each process to determine allowable dis-
          charge rates from each wastewater producing process.

          Concentration limit/flow guidance - This strategy
          limits effluent concentration.  It can be applied
          to an entire plant or to individual processes.  To
          avoid compliance by dilution, concentration limits
          are accompanied by flow guidelines.  The flow guide-
          lines, in turn, are expressed in terms of the produc-
          tion normalizing parameter to relate flow discharge
          to the production rate at the plant.

There are four wet processes used in the carbon and graphite sub-
category.  They were introduced earlier in this section, but will
be expanded here to develop production normalizing parameters.  The
four wet processes are:
                                Vl-11

-------
 Extrusion  Quenching  -  Some  plants, making  large
 electrodes for metals  smelting,  extrude  the mixed
 raw materials for  the  electrode  in paste or "green"
 carbon  form.  The  hot  green carbon is  cooled  by  im-
 mersion in large,  open water tanks to  cool and harden
 them, so that they can be handled in the subsequent
 baking  steps.  These baking steps transform the  "green"
 carbon  to  a hard form, called "baked"  carbon.

 Pollutants are leached from the  surface  of the
 green carbon during  extrusion quenching.  Hence,
 an applicable production normalizing factor for  this
 process would be" surface area of the extruded pieces.

 Impregnation Quenching - Baked carbon  is con-
 verted  to  graphite by  subsequent heating.  Electrical
 and physical properties of  the graphite  can be altered
 by impregnating the  baked carbon with  additional
 graphitizing materials.

 Impregnation occurs  within  a vacuum or pressure
 autoclave,  which is  flooded with impregnant and  then
 emptied once each  impregnation cycle.  Impregnant  is
 absorbed into the  graphite  as a  function of the  sur-
 face area.  Some plants impregnate prior to the  first
 graphitizing cycle,  which is followed  by quenching the
 warm, impregnated, baked carbon  in large,  open water
 tanks to facilitate  subsequent handling.

 As with extrusion  quenching, pollutants  are leached
 from the. surface of  the impregnated graphite  during
 subsequent  quenching.  An applicable production  norma-
 lizing  parameter for impregnation quenching is surface
 area.   Therefore,  effluents from extrusion and impreg-
 nation  quench will be  considered together  in  the
 development of production normalizing  parameters.

 Machining  and Grinding - Baked carbon  is a hard, abrasive
 material that is best  machined using diamond grinding
 wheels^  Water is  used as a machining  lubricant  and
 coolant  as well as for dust control.   Machining  opera-
 tions range from smoothing  or finishing  operations on
 large electrodes in  which less than 1% of  the rough
 electrode  is removed to complex  machined shapes  in which
 the majority of the  rough stock  is machined away.  How-
 ever, complete recycling of machining  process water has
 been achieved in this  industry,  which  results in zero
 discharge.  Zero discharge  is  recommended  for machining
 and grinding processes, and this eliminates the  need for
 defining a production  normalizing parameter for  the
machining process.
                      VI-12

-------
          Scrubbing - Air scrubbers have not been reported to be
          -Ln wide use in the carbon and, graphite industry.  They
          have been observed at only one plant, 15606, where they
          are used in a sand recycling process.  The sand, used
          to pack the baking furnace, is stripped of excess carbon
          by an air blast which is subsequently cleaned with- a
          wet air scrubber.  Scrubbing washes the pollutant laden
          air stream with a flow of water.  Analysis of raw waste-
          water shows that raw scrubber wastewater is similar to
          raw machining process wastewater and therefore will be
          considered along with machining and grinding.  Zero
          discharge is recommended for scrubbing processes, and
          this eliminates the need for defining a production
          normalizing parameter for the scrubber process.

The carbon and graphite industry can therefore be considered to have
two types of process wastewaters.  Quench waters used for extrusion
and impregnation are similar in pollutant constituents and concentra-
tions.  Machining (or grinding) and wet air scrubbing of carbon
and graphite products represents the second type of effluent.
While quench waters tend to contain oils, machined wastes and sand
scrubbing contain suspended solids.

WASTE CHARACTERIZATION AND TREATMENT IN PLACE

This section presents the sources of waste in the Carbon and Graphite
subcategory and the analytical results of samples of this wastewater.
The in-place waste treatment systems are also discussed and effluent
sample data from these systems for the four sampled Carbon and Graphite
plants is presented.

Sources of Wastewater

The following four wet processes are used by the carbon and graphite
industry:

          Post-extrusion quench
          Post-impregnation quench
          Machining
      .    Scrubbing                    •

These wet processes are not universally used by the industry.
Table 6-2 summarizes the use of wet processes at plants contacted
during this study.  A review of this table indicates that:

          Zero or moderate discharge versions of all four wet
          processes presently exist and are in use by the in-
          dustry.

          Manufacturers of large products generally use wet
          processes, although no one plant has been found to
          use all four wet processes.
                                Vl-13

-------
to
1
XI
s
u
W
o>
c
•rt
e
•rl
r*
U
10
s



1 I









Q O
N CO
X
EH
W
i x,
ez c
w o x
c u
^ 03 O* C
J JH g 01
S CUO







i
Q
W O
1 01 tS

US: C 1
U O O O
k4 O CD *rl .C
CD Q* fl£ tD O
§ °*S 2 §
EH xi 3
(1301 X O
3; 33 63
01
XI
«
VI
.C 01
O "D
•H O
X E

Ou
O Z

M
(O O
•3 03 01 01
EH 0)
O N
< *rl
EH CO
o» c-
Vl VI
(0 10

Q
f»




*

XI
c
M
C*

^,
XI

M
XI
U
3
"§
Vl
Bi


ia n

T3 13
O ^ O
VI 01 Vl
XI 01 XI
. O T> 0
41 O 01
rH .CrH
CO XI Ci3
18
O O U
k8 u>
0 00

XI
10

1 01
o
s






^_
O VI
N Q





01
XI
n)
VI
•o
o a




0)
XI
n)
A 01
CP *O
•H O
X E





e
ai 3

n 13
(0 01













0)
01

Q
in vi
01 XI
•n o
O 01
C rH
< u
o o



i



01
XI
10
la
O
•O
O
s









1







1







E
3

•O
0)







u
XI
o
3
•a
o

a.

o

o
•o
01
•o
•H
O
s



1- 1 1 1



01
XI
10
Vl
01
>1 "O
Q Vi O C
N Q S N









1 II 1







1 II 1







E E
3 3 rH rH
•H -rl rH rH '
13 'O 10 10
0) 01 E E
£ E w cn






^ *
in m
XI XI
o o
3 3
•O 03 *O
O C O
VI O >i Vl
O« XI Vl CU
Vl Vl
O ia 3 c tn
18 O i-H «J XI
O W O 01 O
>1 0) 3
*o vi c *o tlj tj
oi o) o o) o o
•O XI Xt 'O C Vl
rH XI Vl rH << O>
O 10 10 O
E CO O E U O



1 1








S- S-
Vl V*
Q O









1 1







1 1








rH rH
rH rH
10 (0
CO CO





01 01
rH rH
10 (0
•rl -H

0) 01
XI XI
(Q (Q


o, o

^t ^1
XI XI
rH rH
n a
•rl -H
O O
01 01
o. a
CO tQ



i








Nw
^1
Q









1







1








rH
rH
m
E
CO





01
rH
10
•rl
jj
01
XI
10
£

O

^1
xi
rH
10
•rl
0
01
a
cn



i








^^
^4
a









i







i








rH
rH
10
CO





01
rH
18
•rl
Vl
01
XI
10
E

O

&1
XI
rH
10
•rl
U
01
G,
cn



i








N
^i
Q









1







1








rH
rH
10
e
cn





in
rH
rtj
•rl
Vl
0)
XI
10
E

O

^1
XI
rH
10
•rl
U
01
a
cn



1








^1
Vl
a









i







i








rH
rH
10
cn





in
rH
10
•H
Vl
01
XI
(0
E

O

^1
XI
rH
(0
•rl
0
01
a
CO



i








^
Jj
Q









1







1








rH
r-l
<0
CO




in
fHf
10
•rl
Vi
01
XI
18

O

rH
10
O
•H
VI O
xi z
S 0
W J











































tn
01
01 Ol
01 >< 0]
01 O 01
>|rH Ol

rH E O

E """a.
Ol o E
O Ol
O fl
in o
i-f O O
XI M
o
XI 0 Vl
in Oi
O*rH >
3 O
II
" E"
rH 3 01
rH -rl Ol
18 tJ VI
E Ol (8
CQE>J



























01
C>
01 Vl
O- 18
Vl JS
(0 U
•C 01
O -rl
01 T3
•H
oi -o "•
Ol >i
Vl — • <0
01 10 >. U
01 .e B v.
01 0 -O rH
O 01 \ (0
O'-< rH CJl
U -C 18
a. 01 o
•c e vi o  "^ ^ ^^

II II II II II

01
XI
(0
Vl
01 A
>•! t3 Oi
1 Vl Q O •rl
Q N E ffl
vr-i4

-------
           Large  products,  such  as  electrodes  and  anodes,  are
           made  in  medium to  large  plants.

           Small  plants  make  small  products, such  as  electric
           motor  brushes and  s^al rings,  and generally  use no
           wet processes.

 Post-Extrusion Quench

 At  four visited  plants, this process  is  associated only with  large
 products  such as electrodes  or  anodes.   These products range  from
 3 to 5 meters long,  40  to  72 cm (16 to 28 inches)  in diameter,
 and,weigh several  metric tons.  Quenching typically  occurs in large
 open, concrete tanks that  are filled  with contact  cooling water.
 Observed  tank capacities range  from 42,000 liters  to 110,000  liters
 (11,000 to 29,000  gallons).   Large products may require several hours
 in  the tank to cool  down.  Extrusion  aids may be  used  in  the  batch
 formulations of  the  product.  In one  plant, extrusion  aids form an
 oil film  on the  surface of the  cooling water.  This  oil film  was
 removed by skimming  and contractor hauled.

 The post-extrusion quench  process  uses a straight-through water flow,
 with no recirculation or cooling.  Flows of 62,000,  364,000,  662,000,
 and 1,744,000 liters/day (16,400,  96,000, 175,000, and 461,000 GPD)
 have been observed at visited plants.

 Zero discharge extrusion quench was not  observed.  All four visited
 plants discharge extrusion quench  water.  By  contrast, four other
 plants surveyed  that make  small, molded  products do  not use
 quenching at all.  These products  are allowed  to air cool with no
 water usage.

 Post-Impregnation  Quench - This process, observed at three visited
 plants, is  associated with large graphite products such as electro-
 des and occurs only  if  impregnation precedes  initial graphitizing.
 The quench  typically occurs  in  large open, concrete  tanks that are
 filled with contact cooling  water.  Tanks of  165,000 liters
 (11,500 gallons) capacity  have been observed.  Some  impregnants
 form an oil film on the surface of the cooling water.  This oil
 film is removed  prior to further processing of the product.

The simplest post-impregnation quench process uses a straight-
 through flow with  no recirculation.  A quench flow rate of 200,000
 liters/day  (53,000 GPD) was  observed at  one plant using this  process.
A zero discharge,  post  impregnation process was observed  at two
other plants.  Incoming water is used to make up evaporation  losses
and maintain bath  temperature at 30-35°C (85-95°F).  No oil film  was
observed.  No recirculating processes or zero-discharge processes
using oil skimming were observed.

When impregnation  of large graphite products occurs  subsequent to
 initial graphitizing, the  impregnated product is allowed  to air
                              Vl-15

-------
cool.  Quenching in water would cause  too rapid a cooling  rate,
and product cracking may result.

Machining - The machining operations that use water are associated
with both large and small products, but some carbon and graphite
product manufacturers also use dry machining.  When water  is  used,
it is used to control dust and to cool the diamond grinding wheels.
In two of four plants visited using wet machining processes,
settling and recycling of the water was observed, resulting in
zero discharge.  Carbon sludge was dewatered and hauled.   Recircu-
lation rates ranged from 11,000 to 18,000 liters/day  (3,000 to
4,800 GPD).

One other plant has an agreement to discharge 73,000  I/day (19,000
GPD) to the local POTW without any pretreatment.  The carbon  solids
in the water are useful to the POTW as a flocculant.  Other plants
surveyed use dry machining processes,  employing vacuum pick-up and
bag house filtering of carbon dust.

Scrubbers - One visited plant recycles the baking oven packing sand
by stripping the carbon dust from the  sand with air.  The  air stream
is subsequently cleaned in a scrubber, which discharges 64,000
liters/day (17,000 GPD) of water.  No  other scrubber  processes have
been observed.

Wastewater Analysis Data

Raw waste characteristics from the four wet processes were obtained
by sampling a total of eight waste streams in four carbon  and graphite
plants.  The samples were analyzed for the pollutants listed  in
Table 6-3, which contains the 129 toxic pollutants and 26  non-toxic
pollutants.

Table 6-4 presents sampling analysis data for detected parameters
in raw process wastewaters and Table 6-6 for treated  effluents for
those plants sampled within the 'carbon and graphite subcategory.
Pollutant parameters are grouped according to toxic organics,
toxic metals, non-toxic metals, and other pollutants.  Total
pollutant concentrations are presented as well as mass loadings
of those pollutant parameters.  Mass loadings were derived by
multiplying concentration by the flow  rate and the hours per  day
that a particular process is operated.  Some entries  were  left
blank for one of the following reasons:  the parameter was not
detected; the concentration used for the kg/day calculation is less
that the lower quantifiable limits or  not quantifiable.  The  kg/day
is not included in, totals for calcium, magnesium, and sodium. The
kg/day is not applicable to pH.  Totals do not include values
preceded by "less , than."

Table 6-4 lists the raw waste streams  sampled for the carbon  and
graphite subcategory.  The following considerations were made in
presenting the data:

     .    Trace Levels - Pollutants detected at levels too
          low to measure are reported  at less than  (<) the
          minimum threshold of- measurement for the test
          method used.
                              VI-16

-------
                              TABLE 6-3
                    POLLUTANT PARAMETERS ANALYZED
TOXIC   ORGANICS

001  Acenaphthene
002  Acrolein
003  Acrylonitrile
004  Benzene
005  Benzidine
006  Carbon tetrachloride
       (tetrachloromethane)
007  Chlorobenzene
008  1,2,4-trichlorobenzene
009  Hexachlorbenzene
010  1,2-dichlorethane
011  1,1,1-trichloroethene
012  Hexachloroethane
013  1,1-dichloroethane
014  1,1,2,2-tetrachloroethane
015  1,1,2,2-tetrachloroethane
016  Chloroethane
017  Bis(chloromethyl)ether
018  Bis(2-chloroethyl)ether
019  2-chloroethyl vinyl ether (mixed)
020  2-chloronaphthalene
021  2,4,6-trichlorophenol
022  Parachlorometa cresol
023  Chlorof orm(trichloromethane)
024  2-chlorophenol
025  1,2-dichlorobenzene
026  1,3-dichlorobenzene
027  1,4-dichlorobenzene
028  3,3-dichlorobenzidine
029  1,1-dichloroethylene
030  1,2-trans-dichloroethylene
031  2,4-dichlorophenol
032  1,2-dichloropropane
033  1,2-dichloropropylene
      (1,3-dichloropropene)
034  2,4-dimethylphenol
035  2,4-dinitrotoluene
036  2,6-dinitrotoluene
037  1,2-diphenylhydra
038  Ethylbenzene
039  Pluoranthene
040  4-chlorophenyl phynyl ether
041  4-bromophenyl phenyl ether
042  Bis(2-chloroisopropyl)ether
043  Bis(2-chloroethoxy) methane
044  Methyle'ne chloride
      (dichloromethane)
045  Methyl Chloride (chloromethane)
046  Methyl bromide (bromoethene)
047  Bromoform (tribromomethane)
048  Dichlorobromomethane
049  Trichlorofluoroethane
050  Dichlorodifluoromethane
051  Chlorodibromomethane
052  Hexachlorobutadiene
053  Hexachlorocyclopentadiene
054  Isophorone
055  Naphthalene
056  Nitrobenzene
057  2-nitrophenol
058  4-nitrophenol
059  2,4-dinitrophenol
0 60  4,6-dinitro-o-cresol
061  N-nitrpsodimethylamine
062  N-nitrosodipheynylamine
063  N-nitrosodi-n-propylamine
064  Pentachlorophenol
065  Phenol
066  Bis(2-ethylhexyl) phthalate
067  Butyl benzyl phthalate
068  Di-tt-butyl phthalate
069  Di-n-ocityl phthalate
070  Diethyl phthalate
071  Dimethyl phthalate
072  1,2-benzanthracene
      (benzo(a)anthracene)
073  Benzo(a)pyrene (3,4-benzopyrene)
0 74  3,4-benzofluoranthene
      (benzo(b)fluoranthene)
075  11,124aenzofluoranthene
      (benzo{k)fluoranthene)
076  Chrysene
077  Acenaphthylene
078  Anthracene
079  1,12-benzoperylene
      (benzo(ghi)perylene)
080  Fluorene
081" Phenanthrene
082  1,2,5,6-dibenzanthracene
      ,(dibenzo (a, h) anthracene)
                                     Vl-17

-------
                       TABLE 6-3 (Continued)
                   POLLUTANT PARAMETERS ANALYZED
TOXIC   ORGANICS

083  Indeno (1,2,3-CD) Pyrene
     (2,3-o-phenylene pyrene)
084  Pyrene
085  Tetrachloroethylene
086  Toluene
087  Trichloroethylene
088  Vinyl chloride (Chlorethylene)
089  Aldrin
090  Dieldrin
091  Chlordane (technical mixture
     and metabolites)
092  4,4'-DDE
093  4,4'-DDE (p,p'-DDX)
094  4,4'-ODD (p,p'-TDE)
095  Alpha-endosulfan
096  Beta-endosulfan
097  Endosulfan sulfate
098  Endrin
099  Endrin aldehyde
100  Heptachlor
101  Heptachlor epoxide (BHC-Hexa-
     chlorocyclohexane)
102  Alpha-BHC
103  Beta-BHC
104  Gamma-BBC (Lindane)
105  Delta-BHC (PCG-polychlorinated
     biphenyls)
106  PCB-1242 (Arochlor 1242)
107  PCB-1254 (Arochlor 1254)
108  PCB-1221 (Arochlor 1221)
109  PCB-1232 (Arochlor 1232)
110  PCB-1248 (Arochlor 1248)
111  PCB-1260 (Arochlor 1260)
112  PCB-1016 (Arochlor 1016)
113  Toxaphene
129  2,3,7,8-tetrachlorodibenzo-p-
     dioxin (TCDD)

Xylenes
Alkyl epoxides
TOXIC METALS

114  Antimony
117  Beryllium
118  Cadmium
119  Chromium
120  Copper
121  Cyanide
122  Lead
123  Mercury
124  Nickel
125  Selenium
126  Silver
127  Thallium
128  Zinc

TON-TOXIC METALS

     Calcium
     Magnesium
     Aluminum
     Manganese
     Vanadium
     Boron
     Barium
     Molybdenum
     Tin
     Yttrium
     Cobalt
     Iron
     Titanium

OTHER POLLUTANTS

     Oil and Grease
     Total Organic Carbon
     Biochemical Oxygen Demand
     Total Suspended Solids
     Phenols
     Fluoride
     pH
                                      VI-18

-------
                     (     N


                     O* vO CM
                                      O

                                      O
                                                  o o

                                                  o o

                                                  o o
                                                  V V
                     o o
                     p o
o o o o> o

o o o o o

o o o o o
                                      o o

                                      O O

                                      o o
                     o

                     O

                     o
                                      000

                                      o o' o
            r-. 3
           . -• O*
                                                                                                                                                                o

                                                                                                                                                                o
       Ll       00
       *J       CI
       c —    u
       »       *-•
                                                                                        >,^  M ^ »i jg
                                                                                       ^s  «  a  >* >» a*
                                                                                       iJ &  U JJ iJ
                                                                                        OJ •*•» J3  3 U »-»
                                                                                    ~*  I  .C    J O >.
                                                                                     c CM  a.*-*  i  i' J=
                                                                                     = ^--     >v  C C -J
                                                                                     01  W    *J  1  I  «

                                                                                    gS-   3^^^
                          i
                                                              1 *T -» -* )
                                                              ) O O O i
                                                                                               .

                                                                                             ooo
                                                                                                      oooooooooo
                                                                               VI-19

-------

















<**
s
C

3
£-























S3
i

S
o
i
!£
==
1
J2
i
Q
^
I
5







si's
icent.rjt.iori HJ
ig/1 kg)
174 361
Hacliiniiig
5 o
U fl
1 -g
>* c
u Q m u
icerttraUoit Ha
ig/1 kg/
73 361
Impregnation C
s a ~* «
O CO)
T3
j

stsf
35 uu3 5
jc r*» 3
o
3 §
2 M
*j a
C — • U
«| »S*«Oj *J
Jeer- x
*S
•3
n
3
a «*r*-.£j
U -S *
u n \a J5
u -3 o O
S"*..v6 S
J?HS
S 0-
o
3 S
!3 -«
m o
O> -sO CM
»n •-* co
m o
o> o CM
OO CSl CO
in r*»
co  \O
O O
0 0
O O



a\ in
ov r^- co
r^ «-• CM
o o ~*
J.:
•it 0
CO CM O
rn 0 -*
•It ^: ^«
•& r- co
O^ CO **
\O •-• in



00 O 00
-a- ~* co





*O l^-
0 0
CM 0
o o
-* CO
**• o
0 0
0 0
r*- r*.
CM O
o o


O cr*
o\ o
•-» o
o o





CM » a  o a. e ts  u^  « > ^-* o
                               vi u -5  i- a, (5 nwu^^ns
 C U  U «3 -S O  >t 4)  3J ••* O •-* _C -iH
<r in r- co o% o —
     —l *J    *-4  3 *5   O    — —* ^- —* «— CM CM
                                   -    g
                                                                                                                  £
                                                                                                                  ce
  -* V
                                              C^CMCMCMCMCMOl O
                                                            VI-20

-------
(O

o

o
                                                                in
                                                                o
                                                                r-
                                                                o
                                                                o
                            CO
                              O O      ^1
                                                O   O O O
                                                •-H rH r-4 i-H i-l
                                                O O O O O
                                                             o

                                                             o
    at a
    i-l i-H
    oo
o o
fH r-t
O O
o
rH
O
o
^H
O
 •
O
§2   BS|
iH 4J   i-H 3 (3
dj w   DU a w
                                          VI-21

-------
                   t—
                   CT>
                   CO
                   I—

                   Crt

                   CO
                                                                                      §§
                   inooenuioi'inooo    CMOOVO
                   O^Hf-liHOr-lr-IOOf-lr-lr-HOror-
                   oooooooooo  ooooo
              •g
                   CM    CM
                   CMOO m
                   in 01
                   o o

                   g§
                   a o
                    •  •
                   o o
                                »»•
                                o TJ> m
                     i-H VO   i-IO O rH
                     oc>   gooo
                                                                                         oo   oo o o
                                              OQ CO CQ

•8
                        en

                        8
                                                                   S
                                                                   o
                                         ;" CM CO O O VO CSI

                                           O 00 O 0
-------
   triin'C
   &i-i «
     *o ij

     •"S
            t*»   CM
            Gl    I
            CO   i-l
             »   rH
                 o
                                                                 oo vo —in  .
                                                                 CMi-H W  -O
                                                                     —o> v
01 (Of) "O
ra jjr- c
ft V.i-1 -iH
•^ ro (3
c
.2
4J
n)
iJ S1
C i-H -H
a) \ro -4 - G
o en
CM CM
CM 00 CO





o cn
R 8
CM co ro
                                     o
                           VOtN r- O O O O rH   O
                           cMonooooo   o

                           oooooooo   o
                                                           :S
                                                       . .  _i rn
                                                       oo o
                                                                          ro
                                                                   *» ^J1 ro o
                                                                     in vo o
                                                                     «» n o
                           ***    ^
                           in r-1 in ro     ,
                            .cxi  -ojoooooooooinoco
                                                                     00
                                                                     oo oo      o
                                                                     <7t oo m o  •
                                                                     O)rH O) CM O
    H1

feis
s,O -H
?SS
                                    o <
                           *J2
8
    r>*  _
     81
        CM

        r»oo
                           • CM  • <»o o t-i o o oo o mo i"

                          mCOrHOOOOOOOOOCMOrO
                                                                     in
                                                                          o
                                                                       •» CM
                                                                     o  • o
                                                                vor-  .o  •
                                                                —no o r- o
            -ifi   1   *,§
            U*—'           S-^* *
            ,5    Q   o    3« •
            \ c  M   ft   -IH ai
            "f O      SS    O C
            —•«  «           ~~
                                                    VI-23

-------
          Incoming Water Analysis - In some instances samples
          were taken of incoming plant water.  Pollutants were
          found -in some of these incoming streams at essential-
          ly the same levels as in the output streams, indi-
          cating that the incoming water is the source of the
          pollutant.  These pollutant levels were not subtracted
          from the total pollutant level of the affected streams.
          The presence of pollution in the incoming streams is
          noted in the data.

          Pollutant Loads - Pollutant loads were calculated for
          measurable pollutants by multiplying concentration by
          flow and daily flow durations.  This procedure gives
          calculated pollutant loads in kg/day for each pollu-
          tant for each stream sampled.

          Sample Blanks - Blank samples of organic-free distilled
          water were placed adjacent to sampling points to detect
          airborne contamination of water samples.  These sample
          blank data are not subtracted from the analysis results,
          but, rather, are shown as a  (B) next to the pollutant
          found in both the sample and the blank.  The tables show
          figures for total toxic organics, total toxic and
          non-toxic metals, and other pollutants.

Summary of Raw Waste Stream Data

Table 6-5 summarizes pollutant concentration data for the sampled
raw waste streams for the Carbon and Graphite Subcategory.  Mini-
mum, maximum, mean, and flow weighted mean concentrations have been
determined' for sampled raw waste streams.  The flow weighted mean
concentration was calculated by dividing the total mass rates  (mg/
day) by the total flow rate (liters/day) for all sampled data  for
each parameter.  The flow weighted mean concentration of total raw
waste (includes machining, grinding, scrubber wastes, and quenches)
is also presented in Table 6-5.

Pollutant parameters listed in Table 6-5 were selected based upon
their occurrence and concentration in  the  sampled streams.  Those
parameters not detected or at  trace levels in the sampled streams
were excluded from  this table.

Treatment In-Place

Table 6-1 summarized treatment  in place  for  the  carbon and  graphite
industry.  Wastewater  treatment was observed  in  six  of the  carbon
and graphite plants visited, and consists  of  the following:

          Oil separation  prior  to discharging quench water.

          Settling  carbon solids out of  water  used  for
          machining coolants prior to  reuse.
                              VI-24

-------
                                         TABLE 6-5
                              CARBON AND GRAPHITE SUBCATEGORY
                   MACHINING, GRINDING & SCRUBBER RAW WASTE STREAM DATA
     Parameter
                                             Flow Weighted
  Minimum        Maximum         Mean            Mean
Concentration  Concentration  Concentration  Concentration
                   (mg/1)         (mg/1)
TOXIC ORGANICS

Oil  1,1,1 Trichloroethane
044  Methylene Chloride
065  Phenol
066  Bis(2-ethylhexyl)phthalate
067  Butyl benzyl phthalate
068  Di-n-butyl phthalate

TOXIC METALS

114  Antimony
115  Arsenic
118  Cadmium
119  Chromium
120  Copper
121  Cyanide
122  Lead
123  Mercury
124  Nickel
125  Selenium
128  Zinc

NON-TOXIC METALS

     Aluminum
     Manganese
     Vanadium
     Boron
     Barium
     Molybdenum
     Tin
     Yttrium
     Cobalt
     Iron
     Titanium
     Magnesium
 0.068,(B)*
<0.01
<0.01
<0.01
<0.01
 0.007
 0.001
 0.001
<0.003
<0.005
<0.01
<0.01
<0.005
<0.005
<0.01
 0.003
 0.061
 0.23
 0.006
 0.023
 0.041
 0.085
 0.020
 0.013
<0.004
 0.013
 0.573
 0.047
 1.21
 0.068(B)
 0.049
 0.039
 0.410
 0.019
<0.01
 0.005
<0.01
 0.019
 0.054
 5.3
 0.065
 1.7
 0.002
 0.146
 0.08
 0.237
 2.18
 0.071
 0.121
 0..424
 0.878
 0.445
 0.208
 0.007
 0.051
 6.689
 0.338
 8.296
0.068
0.023
0.025
0.11
0.013
0.01
0.003
0.004
0.008
0.028
1.67
0.03
0.483
0.001
0.062
0.025
0.125
0.942
0.05
0.075
0.193
0.48
0.167
0.085
0.005
0.038
3.285
0.145
3.79
0.068
0.0160
0.034
0.153
0.0115
0.01
0.0178
0.006
0.01
0.045
1.219
0.026
0.264
0.0025
0.046
0.015
0.178
1.783
0.061
0.105
0.347
0.524
0.358
0.171
0.005
0.049
5.5
0.273
2.07
                                              VI-25

-------
                                  TABLE 6-5 (Con't)
                             CARBON AND GRAPHITE SUBCATEGORY
                   MACHINING, GRINDING & SCRUBBER RAW WASTE STREAM DATA
     Earameter
OTHER POIZOTANTS

     Total Suspended Solids
     Tbtal Organic Carbon
     Biochemical Oxygen Demand
     Oil and Grease
     Hienols
                                             Flow Weighted
  Minimum        Maximum         Mean            Mean
Concentration  Concentration  Concentration  Concentration
   (rag/1)         (mg/1)         (mg/1)         (mg/1)
 53
 116
 0.0
 7.0
 0.014
2988.
7222.
25
70.4
0.122
1329.
2050.3
10.13
26.73
0.04
612.
353
9.2
11.3
0.066
* Based on one stream, one day (concentration found in blanks)
                                              VI-26

-------
                                  TABLE 6-5  (Con't)
                             CARBON AND GRAPHITE SUBCATEGORY
                   EXTRUSION AND IMPREGNATION QUENCHING RAW KfcSTE STREAMS
     Parameter
                                             Flow Weighted
  Minimum        Maximum         Mean            Mean
Concentration  Concentration  Concentration  Concentration
   (mg/1)         (mg/1)         (mg/1)         (mg/1)
TOXIC ORGANICS

004  Benzene                       <0.01           0.011
039  Pluoranthene                  <0.01           0.013
044  Methylene chloride            <0.01           0.062
066  Bis(2-«thylhexyl)phthalate    <0.01           2.1
072  1,2-Benzanthracene            <0.01           0.019
073  Benzo pyrene                  <0.01           0.013
075  11,12 Benzoanthracene         <0.01           0.011
076  Chrysene                      <0.01           0.011
078  Anthracene                    <0.01           0.013

TOXIC METALS

119  Chromium                      <0.01          <0.015
120  Copper                        <0.01           0.027
122  Lead                          <0.005          0.045
123  Mercury                        0.0007        <0.001
124  Nickel                        <0.01           0.114
125  Selenium                       0.002         <0.01
128  Zinc                           0.023          0.11

NON-TOXIC METALS

     Aluminum                       0.217          0.279
     Manganese                      0.003          0.017
     Vanadium                      <0.01           0.061
     Boron                          0.018          0.116
     Barium                         0.023          0.042
     Molybdenum                     0.005         <0.035
     Yttrium                       <0.004          0.005
     Cobalt                         0.003         <0.05
     Iron                           0.003          0.653
     Titanium                      <0.002          0.003
     Magnesium                      1.37           8.069
                              0.01
                              0.011
                              0.034
                              0.533
                              0.013
                              0.012
                              0.01
                              0.01
                              0.011
                              0.013
                              0.016
                              0.038
                              0.0012
                              0.038
                              0.005
                              0.05
                              0.242
                              0.011
                              0.016
                              0.055
                              0.035
                              0.025
                               0.0043
                              0.034
                              0.424
                              0.002
                              3.62
0.01
0.01
0.014
0.047
0.010
0.01
0.01
0.01
0.01
0.013
0.023
0.037
0.001
0.107
0.003
0.029
0.239
0.0038
0.03
0.062
0.018
0.008
0.003
0.01
0.104
0.002
4.23
                                             VI-27

-------
                                  TABLE 6-5 (Con't)
                             CARBON AND GRAPHITE SUBOVTEGORY
                   EXTRUSION AND IMPREGNATION QUENCHING RAW WASTE STREAMS
     Parameter
OTHER POLLUTANTS

     Total Suspended Solids
     Total Organic Carbon
     Biochemical Oxygen Demand
     Oil & Grease
     Phenols
                                             Flow Weighted
  Minimum        Maximum         Mean            Mean
Concentration  Concentration  Concentration  Concentration
   (mg/1)         (mg/1)         (mg/1)         (mg/1)
 1.0
<1.0
 2.0
 3.5
<0.005
19.0
4.1
19.0
44.0
0.022
6.90
2.28
7.67
18.80
0.015
2.79
2.53
5.69
7.93
0.016
                                           VI-28

-------
                      TABLE 6-5 (Con't)
             CARBON AND GRAPHITE-TOTAL RAW WASTE
        (MACHINING, GRINDING,  SCRUBER EFFLUENT,  AND
             EXTRUSION AND IMPREGNATION QUENCHES)
     Parameter
TOXIC ORGANICS

004  Benzene
Oil  1,1,1-trichloroethene
039  Fluoranthene
044  Methylene chloride
065  Phenol
066  Bis(2-ethylhexyl)phthalate
067  Butyl benzyl phthalate
068  Di-n-butyl phthalate
072  1,2-benzanthracene
073  Benzo(a)pyrene
075  11,12-benzofluoranthene
076  Chrysene
078  Anthracene
079  1,12-benzoperylene

TOTAL- TOXIC ORGANICS

TOXIC ORGANICS

119  Chromium
120  Copper
122  Lead
124  Nickel
128  Zinc

OTHER POLLUTANTS          ,

     Total Suspended Solids
     Total Organic Carbon
     Oil & Grease
     Biochemical Oxygen Demand
  Flow Weighted
Mean Concentration
       (mg/1)
       0.01
       0.01
       0.01
       0.021
       0.013
       0.052
       0.01
       0.01
       0.01
       0.012
       0.01
       0.01
       0.01
       0.01

       0.197
       0.015
       0.08
       0.045
       0.104
       0.036
       31.8
       19.25
       8.09
       5.86
                              VI-29

-------
 Oil Separation : - Oil separation was observed at one visited plant.
At  this plant, the effluents from the extrusion quench and the
impregnation quench each flow through oil separators prior to
discharge.

The extrusion quench oil separation treatment was installed primarily
to  handle oil leakage from the extrusion machinery and to contain
leakage from any major hydraulic system failure that might occur.

Process wastewater at the rate of 27,600 1/hr (7,292 gal/hr) enters
the tank at the bottom.  Oil droplets impinge on plates placed
perpendicular to the flow direction causing the oil droplets to coa-
lesce and rise to the surface.  The water leaves the tank at the
bottom of the opposite end of the tank.  The oil that collects at the
top of the tank is periodically skimmed off and stored for future
use or reclaim.

The impregnation oil separation treatment is similar to the extrusion
oil separation treatment.  The only significant difference is that
the impregnation quench flow is smaller at 8,357 1/hr (2,208 gal/hr).
The impregnant oil rises to the top of the tank from which it is
skimmed periodically.  Skimmed oil is stored for future use or
reclaim.

Settling - Settling of carbon particles generated from machining
and wet air scrubbing processes was observed at five visited
plants.  In three of these plants, carbon particles are picked up
in  a water stream and sent to a settling tank.  The supernatant is
recycled back to the machining process.  The carbon particles are
pumped from the bottom of the settling tank as sludge and contrac-
tor removed.

There are differences between the plants in the implementation of
the settling treatment.  In Plant 36173 a water flow of 757. 1/hr
(200 gal/hr) carries carbon particles to a circular clarifier that
is  equipped with a conical bottom.  Carbon sludge, drawn from the
clarifier, is pumped to a tank which is emptied periodically by
contract hauling.  The effluent water is recycled back to the
machining processes for reuse.  In Plant 30047 a water flow of 712
1/hr (188 gal/hr) carries carbon particles to a 15,140 liter (4,000
gal) lamella separator.  An anionic polymer is added to the water
before it enters the lamella separator.  The polymer acts as a floc-
culant, aiding the settling of carbon particles.  The carbon parti-
cles are drawn off the bottom of the lamella separator as sludge,
which is dewatered in a vibrating screen dewaterer.  The water from
the dewatered sludge is returned to a 16,300 liter (4,310 gal) sump
located upstream of the lamella separator, which collects the wet
machining wastes.  Plant 36175 treats process wastewater in two
parallel clarifiers prior to discharging the treated effluent.
The clarifiers are regularly pumped out to maintain a low level of
carbon sludge.  The treated effluent is then discharged directly
to  a stream at a rate of 22710 liters per hour (6000 gallons/hr).
                                 VI-30

-------
Plant 15606 uses a wet air scrubber to remove carbon particles  from
baking operations.  The scrubber water is discharged to a settling
pond where settling of carbon particles occurs.  The wastewater flow
rate from this process is approximately 15897 liters/hr (4200
gallons/hr).

Treated Waste Analysis

Table 6-6 presents the sampling analysis results of treated effluents
from the quenching processes and two machining processes.  Table 6-6
is based on the same considerations used in constructing Table  6-4
in reporting trace levels, incoming water analysis, and pollutant
loads.  As with Table 6-4 the samples presented in Table 6-6 were
analyzed for the pollutants listed in Table 6-3.          '

Actual Performance of Observed Treatment Systems

Use of raw wastewater data from Table 6-4 and treated wastewater
data from Table 6-6 permits assessment of the performance of
the following three observed treatment systems:

          Extrusion oil separation prior to discharge
     .    Impregnation oil separation prior to discharge
     .    Wet machining settling and recirculation

Extrusion Oil Separation - The performance of the extrusion oil
separator at plant 36173 is presented in Table 6-7.  Its oil and
grease removal effectiveness is fairly low.  The low removal rate
is consistent with its primary purpose of containing, a major
hydraulic fluid spill should it occur rather than of removing small
amounts of oil adhering to the product.  The concentration of metals
and organics is essentially unchanged through th\e separator.  The
apparent increases in concentration of some pollutants shown in
Table 6-7 are attributed to sampling variations and are not considered
significant in light of the very low concentratio^i levels involved.

Impregnation Oil Separation - The performance of the impregnation oil
separator at plant 36173 is presented in Table 6-8.\  Oil and grease
is reduced from 44 to 6 mg/1 which is consistent with its primary
purpose of removing process impregnant from the discharge stream.  As
with Table 6-7, increases in concentration of some pollutants such
as zinc are attributed to sampling variations.        \

Machining Settling - The performance of the machining clarifier at
plant 36173 is presented in Table 6-9.  The clarifier removes 99%
of the TSSf
-------
Plant  10 No.
Stream Description

Ftou (1/ltr)
Duration (hrs)
Sample ID No.

TOXIC  ORCANICS
   1  Acenaphtheni!
   4  Benzene
   7  Chlorobonzene
  11  1,1,1-Trichloroethane
  23  Chloroform
  24  2-Chlorophcnol
  37  l|2-Diphenylhydrazine
  J8  Ethylbenzcne
  39  Fluoranthene
  bit  Hethylene Chloride
  67  Bromoforra
  48  Dichlorobromomethane
  51  Chlorodibromomethane
  S3  Naphthalene
  57  2-Nitrophenol
  62  N-Nitrosodiphenylamine
  65  Phenol
  66    Bis(2-ethylhexyl)
        phthalate)
  67  Butyl benzyl phthalate
  68  Di-n-butyl phthalate
  69  Di-n-octyl phthalate
  70  Diethylphthalatc
  71  Dinethylphthalate
  72  Benzanthracene
  73  3,4-Bcnzopyrene
  75  11,12-Benzofluoranthene
  76  Chrysene
  73  Anthracene
  79  1,12-Bcnzoperylene
  SO  Fluorene
  83  Ideno(l,2,3-cd)pyrene
  86  Pyrene
  85  Tetrachloroethylene
  86  Toluene
  87  Trichloroethylene
  96  6,6-DDE(p,p-TDE)
100  Heptachlor
102  Alpha-BHC
106  G-imia-BHC
Total Toxic Organics

TOXIC ffiTALS

116  Antimony
115  Arsenic
117  Beryllium
118  Cadmium
119  Chromium
120  Copper
121  Cyanide
122  Lead
123  Mercury
126  (ticket
125  Seleniun
126  Silver
127  Thallium
128  Zinc
Total Toxic Metals

OTHER POLLUTANTS   •

     TSS
     TOC
     BOD
     Oil & Grease
     Phenols
                                      TABLE 6-6
                CARBON & GRAPHITE TREATED EFFLUENT CHARACTERISTICS

Concentration Mass Load    Concentration Mass Load        Concenlration Mass Load
mg/liter      kg/day       mg/liter     kg/day            nig/liter     kg/day
         36173                      36173                          36173
Extrusion Quench Effluent  Impregnation Quench Effluent   Machining Effluent
<0.010
<0.010

<0.010
<0.010
 0.090
<0.010

<0.010
<0.010
<0.010
<0.010

<0.010
<0.010
<0.010
<0.010
<0.010
<0.010
<0.010
<0.010
<0.010
<0.010
<0.010

<0.010
<0.010
 0.090
 0.001
 0.001
<0.001
<0.005
<0.015
<0.013
 0.030
<0.050
<0.001
<0.013
 0.0181
<0.001
<0.001
 0.135
 0.185
 6.0
 2
 2.0
11.0
 0.020
         27,600
         26
         3273
               0.060
               0.060
0.00066
0.00066
0.020
0.012
0.089
0.122
4.00
1.325
1.325
7.29
0.013
                     8357
                     24
                     3274
                           <0.010
                           <0.010
            <0.010

            <0.010
            <0.010
             0.023
            <0.010

            <0.010

            <0.010

            <0.010
            <0.010

            <0.010
            <0.010
             0.010
            <0.010
            <0.010

            <0.010
            <0.010
            <0.010
            <0.010
            <0.010

            <0.010
            <0.010
                            0.033
<0.001
 0.001
<0.001
<0.005
<0.015
<0.013
<0.010
<0.050
<0.001
<0.013
 0.0021
<0.001
<0.001
 0.041
 0.044
 5.0
 4
 7.0
 6
 0.014
  VI-32
                                         0.005
              0.002
                                         0.007
                          0.0002
                          0.0004
0.0082
0.0088
1.00
0.802
1.40
1.20
0.003
                                                           0.059
 0.001
<0.001
<0.001
<0.005
 0.043
 0.158
<0.01
 0.435
<0.001
<0.013
 0.013
 0.001
<0.001
 0.027
0.682
24.0
 2.0
 6.0
19.0
 0.010
                                        757
                                        24
                                        3272
                                                          <0.010
                               <0.010


                                0.059        0.001
                               <0.010

                               <0.010
                                                          <0.010
                                                          <0.010
                               <0.010
                               <0.010
                               <0.010

                               <0.010
                               <0.010
                               <0.010
                                                                        0.001
                                                                        0.00002
                                                         0.0008
                                                         0.-003
                                                         0.008
                                                         0.0002
                                                         0.00002
0.0005
0.0125
0.436
0.036
0.109
0.345
0.0002

-------
                         TABLE 6-7
       EXTRUSION QUENCH OIL SEPARATION PERFORMANCE
Plant ID  36173
SAMPLE ID NO.
  3270

Raw Waste
  mg/1
   3273

Treated Waste
   mg/1
044  Methylene Chloride     .062*
072  1,2-Benzanthracene     0.011
073  3,4-Benzopyrene        0.013
075  11,12-Benzo            .011
     fluoranthene
076  Chrysene               .011

Total Toxic Organics        0.108

125  Selenium               0.002
128  Zinc                   0.023

Total Toxic Metals          0.025

     TSS                    5
     TOC                    1
  -   BOD                    2
     Oil & Grease           14
     Phenols                .022
                 .09
                <.010
                <.010
                <.010

                <.010

                 0.09

                 0.018*
                 0.135

                 0.153

                 6
                 2
                 2
                 11
                 .020
* Interferences present
                        VI-33

-------
                         TABLE 6-8
       IMPREGNATION QUENCH OIL SEPARATION PERFORMANCE
SAMPLE ID NO.
  3271

Raw Waste
  mg/1
   3274

Treated Waste
   mg/1
044  Methylene Chloride      .030*
072  1,2-Benzanthracene      .019

Total Toxic Organics         0.049

115  Arsenic                 .001
125  Selenium                .006*
128  Zinc                    .034

Total Toxic Metals           0.041

     TSS                     19
     TOG                   <1
     BOD                     19
     Oil & Grease            44
     Phenols                 .019
                 .023
                 .010

                 0.033

                 .001
                 .002*
                 .041

                 0.044

                 5
                 4
                 7
                 6
                 .014
   Interferences present
                           VI-34

-------
                              TABLE 6-9
               MACHINING SETTLING WATER CHARACTERISTICS
SAMPLE I.D. NO.
004  Methylene Chloride
067  Butyl Benzyl Phthalate

Total Toxic Organics
114
115
119
120
122
123
124
125
128
Antimony
Arsenic
Chromium
Copper
Lead
Mercury
Nickel
Selenium
Zinc
Total Toxic Metals

     TSS
     TOC
     BOD
     Oil & Grease
     Phenols
      3269

Grinding Effluent
      mg/1

      .049*
      .019

      0.068

      .003
      0.001
      0.054
      5.3
      1.7
      .002
      0.02
      .080*
      0.061

      7.22

      2,988
      188
      25
      20
      .014
     3272

Clarifier Effluent
     mg/1

     .059
    <.010

     0.059

     .001
    <0.001
     0.043
     .158
     .435
    <.001
    <0.013
     .013
     .027

     0.682

     24
     2
     6
     19
     .010
*  Interferences Present
                               Vl-35

-------
POTENTIAL  POLLUTANT  PARAMETERS

This  section  assesses  the  raw wastewater  characteristics  of  the
carbon  and graphite  industry and  identifies  the  significant  pol-
lutants.   The wastewater analysis  of  8  raw waste streams  sampled
at  6  plants were  shown in  Table 6-5.

The requirement for  control of a particular  pollutant depends  upon
consideration of  its presence at harmful  levels  and  the existence
of practical  technology for removing  the  pollutant.   The  process
raw waste  pollutant  parameters listed in  Table 6-5 were reviewed
in  light of these considerations.  As a result of this review,
the following pollutants have been selected  from machining,  grin-
ding  and scrubber raw  waste data as significant  pollutants re-
quiring control:
          120  Copper

          122  Lead

          128  Zinc
               Total Suspended
                 Solids
Total Organic Carbon

Oil and Grease

Iron

Aluminum
Table 6-10 lists pollutants other  than  the potential pollutant
parameters presented above that were analyzed  in machining,  grinding
and scrubber effluent raw waste streams sampled within  the carbon
and graphite subcategory.  Each pollutant is listed in  the appropriate
group as being not detected, detected at trace levels,  or at levels
too low to be effectively treated.

Review of quenching raw waste streams shows the following pollutant
as significant and requiring control:

          Oil and Grease

Table 6-11 lists pollutants other  than  the potential pollutant
parameter listed above that were analyzed in extrusion  and
impregnation quench raw waste streams sampled within the carbon
and graphite subcategory.  Each pollutant is listed in  the appro-
priate group as being not detected, detected at trace levels,
or levels too low to be effectively treated.
                             Vl-36

-------
                                   TABLE 6-10
                        CARBON AND GRAPHITE SUBCATEGORY
            POLLUTANT PARAMETERS NOT DETECTED IN RAW WASTE STREAMS
                       MACHINING, GRINDING, AND SCRUBBER
TOXIC   ORGANICS

002  Acrolein
003  Acrylonitrile
005  Benzidine
006  Carbon tetrachloride
     (tetrachloromethane)
007  Chlorobenzene
008  1,2,4-trichlorobenzene
009  Hexachlorobenzene
010  1,2-dichloroethane
012  Hexachloroethane
013  1,1-dichloroethane
014  1,1,2-trichloroethane
015  1,1,2,2-tetrachloroethane
016  Chloroethane
017  Bis (dhilorornethyl) ether
018  Bis(2-chloroethyl)ether
019  Ether (mixed) 2-chloroethyl vinvyl
020  2-chloronaphthalene
021  2,4,6-trichlorophenol
022  Parachlorometa cresol
025  1,2-dichlorobenzene
026  1,3-dichlorobenzene
027  1,4-dichlorobenzene
028  3,3-dichloroethylene
029  1,1-dichloroethylene
030  1,2-trans-dichloroethylene
031  2,4-dichlorophenol
032  1,2-dichloropropane
033  1,2-dichloropropylene
035  2,4-dinitrotoluene
036  2,6-<3initrotoluene
038  Ethylbenzene
040  4-chlorophenyl phenyl ether
041  4-bromophenyl phenyl ether
042  Bis(2-chloroisopropyl)ether
043  Bis(2-chloroethoxy)
045  Methyl chloride  (chloromethane)
046  Methyl bromide (bromomethane)
047  Brcmoform
049  Trichlorofluoromethane
050  Dichlorodifluoromethane
051  Chlorodibromethane
052  Hexachlorobutadiene
053  Ffexachlorocyclopentadiene
054  Isophorone
056  Nitrobenzene
058  4-nitrophenol
059  2,4-dinitrophenol
061  N-nitrosodimethylamine
063  N-nitrosodi-n-propylamine
064  Pentachlorophenol
072  Benzanthracene
074  3,4-benzofluoranthene
     (benzo(b)fluoranthene)
076  Chrysene
077  Acenaphthylene
079  1,12-benzoperylene
082  1,2,5,6-dibenzanthracene
083  Ideno pyrene
085  Tetrachloroethylene
088  Vinyl chloride (chloroethylene)
089  Aldrin
090  Dieldrin
091  Chlordane
092  4,4-DDT
093  4,4-DDE (pfp'-DDX)
095  Alpha-endosulfan
096  Beta-endosulfan
097  Endosulfan sulfate
098  Endrin
099  Endrin aldehyde
101  Heptachlor epoxide
     (BHC-hexachlorocyclohexane)
103  Beta-BHC
104  Gamma-BHC
105  Delta-BHC (PCB-^)olychlorinated
     biphenyls)
106  PCB-1242 (Arochlor 1242)
107  PCB-1254 (Arochlor 1254)
108  PCB-1221 (Arochlor 1221)
109  PCB-1232 (Arochlor 1232)
110  PCB-1248 (Arochlor 1248)
111  PCB-1260 (Arochlor 1260)
112  PCB-1016 (Arochlor 1016)
113  Toxaphene
129  2,3,1,8-tetrachlorodibenzo-p-
     dioxin (TCDD)
                                   VI-37

-------
                             TABLE 6-10  (Cbntinued)
                       POLLUTANTS  DETECTED AT TRACE LEVELS
                       MACHINING, GRINDING, AND SCRUBBER
                               RAW WASTE STREAMS
TOXIC OSGANICS

001  Acenaphthene
004  Benzene
023  Chloroform
024  2-chlorophenol
034  2,4-dimethylphenol
037  1,2-diphenylhydrazine
039  Pluoranthene
048  Dichlorobromethane
055  Naphthalene
057  2-nitrophenol
062  N-nitrosodiphenylamine
068  Di-n-butyl phthalate
069  Di-n-octyl phthalate
070  Diethyl phthalate
071  Dimethyl phthalate
073  Benzo(z)pyrene
075  11,12-benzofluoranthene
078  Anthracene
080  Pluorene
081  Phenanthrene
084  Pyrene
086  Toluene
087  Trichloroethylene
094  4,4-DDE
100  Beptachlor
102  Alpha-BRC
104  Gamma-BHC
TOXIC METALS

117  Beryllium
126  Silver
127  Thallium
127  Thallium
                                   VI-38

-------
                                  TABLE 6-10 (Continued)
                POIiUTANTS DETECTED AT LEVELS TOO LOW TO REQUIRE TREATMENT*
                        MACHINING, GRINDING, AND SCRUBBER EFFLUENT
Parameter

Toxic   organics

Oil  1,1,1-Trichloroethane
044  Methylene Chloride
065  Phenol
066  Bis(2-ethylhexyl)Phthalate
067  Butyl Benzyl Phthalate
068  Di-n-butyl Phthalate

Toxic Metals

114  Antimony
115  Arsenic
118  Cadmium
119  Chromium
121  Cyanide
123  Mercury
125  Selenium

Non-Toxic Metals

     Barium
     Tin
     Yttrium
     Cobalt
     Titanium
     Magnesium

Other Pollutants

     BCD
     Phenols
Mean Concentration rag/1
       0.068
       0.023
       0.025
       0.11
       0.013
       0.01
       0.003
       0.004
       0.008
       0.028
       0.03
       0.001
       0.025
       0.48
       0.085
       0.005
       0.038
       0.145
       3.79
       10.13
       0.04
    Flow Weighted
Mean Concentration rog/1
       0.068
       0.016
       0.034
       0.153
       0.0115
       0.01
       0.0178
       0.006
       0.01
       0.045
       0.026
       0.0025
       0.015
       0.524
       0.171
       0.005
       0.049
       0.273
       2.07
       9.2
       0.066
*These parameters do not require treatment because (1) the raw waste concen-
 tration is less than the daily makimum figure (See Table 6-12), or (2) no
 performance data is available for treatment of these parameters.
                                      VI-3 9

-------
                              TABLE  6-11
                    CARBON AND GRAPHITE SUBCATEGORY
         POLLUTANT PARAMETERS  NOT DETECTED IN RAW WASTE STREAMS
                  EXTRUSION AND  IMPREGNATION QUENCHES
TOXIC ORGANICS

002  Acrolein
003  Acrylonitrile
005  Benzidine
006  Carbon tetrachloride
      (tetrachlorcnte thane)
0 08  1,2,4-trichlorobenzene
009  Hexachlorobenzene
010  1,2-dichloroethane
012  Hexachloroethane
013  1,1-dichloroethane
014  1,1,2-trichloroethane
015  1,1,2,2-tetrachloroethane
016  Chloroethane
017  Bis(chloromethyl) ether
018  Bis(2-chloroethyl)ether
019  Ether (mixed) 2-chloroethyl vinyl
020  '2-chloronaphthalene
021  2,4,6-trichlorophenol
022  Parachlororaeta cresol
025  1,2-dichlorobenzene
026  1,3-dichlorobenzene
027  1,4-dichlorobenzene
028  3,3-dichloroethylene
029  1,1-dichloroethylene
030  1,2-trans-dichloroethylene
031  2,4-dichlorophenol
032  1,2-dichloropropane
033  1,2-dichloropropylene
     (1,3-dichloropropene)
035  2,4-dinitrotoluene
036  2,6-dinitrotoluene
040  4-chlorophenyl phenyl ether
041  4-bronophenyl phenyl ether
042  Bis(2-chloroisopropyl) ether
043  Bis(2-chloroethoxy) Methane
045  Methyl chloride (chloromethane)
046  Methyl bromide (bromomethane)
049  Trichlorofluoromethane
050  Dichlorodifluoromethne
052  Hexachlorobutadiene
053  Hexachlorocyclopentadiene
054  Isophorone
056  Nitrobenzene
057  2-nitrophenol
058  4-nitrophenol
059  2,4-dinitrophenol
060  4,6-dinitro-o-cresol
061  N-nitrosodimethylamine
063  N-nitrosodi-n-propylamine
064  Pentachlorophenol
069  Di-n-octyl phthalate
074  3,4-Benzofluoranthene
     (benzo(b)fluoranthene)
077  Acenaphthylene
085  Tetrachloroethylene
088  Vinyl Chloride (chloroethylene)
089  Aldrin
090  Dieldrin
091  Chlordane
092  4,4-DDT
Q93  4,4HDDE (p,p-DDX)
096  Beta-endosulfan
097  Endosulfan sulfate
098  Endrin
099  Endrin aldehyde
101  Heptachlor epoxide
     (BHCHtiexachlorocyclohexane)
103  Beta-BHC
105  Delta-BHC (PCB-polychlorinated
     biphenyls)
106  PC3-1242 (Arochlor 1242)
107  PCB-1254 (Arochlor 1254)
108  PCB-1221 (Arochlor 1221)
109  PCB-1232 (Arochlor 1232)
110  PCB-1248 (Arochlor 1248)
111  PCB-1260 (Arochlor 1260)
112  PCB-1016 (Arochlor 1016)
113  Toxaphene
129  2,3,7,8-tetrachlorodibenzo-p-
     dioxin (TCDD)
                                    VI-40

-------
                             TABLE 6-11 (Continued)
                        CARBON-'AND GRAPHITE SUBCATEQORY
                  POLLUTANT PARAMETERS DETECTED AT LOW LEVELS
              EXTRUSION AND IMPREGNATION QOENCH-RAW WASTE STREAMS
Toxic Organics

001  Acenaphthene
004  Benzene
007  Chlorofoenzene
Oil  1,1,1-Trichlorethane
023  Chloroform
024  2-chlorophenol
034  2,4-dimethyl phenol
037  1,2-diphenylhydrazine
038  Ethylbenzene
047  Bronoform
048  Dichlorobronethane
051  Chlorodibromomethane
055  Naphthalene
062  N-nitrosodiphenylamine
065  Phenol
067  Butyl Benzyl Phthalate
068  Di-n-butyl phthalate
070  Diethyl phthalate
071  Dimethyl phthalate
079  1,12-benzopenylene
080  Fluorene
081  Phenanthrene
082  Dibenzo anthracene
083  Ideno pyrene
084  Pyrene
086  Ibluene
087  Trichloroethylene
094  4^4-DDE
095  2-endosulfan
100  Heptachlor
102  Alpha-BHC
104  Ganroa-BHC

Toxic Metals

114  Antimony
115  Arsenic
117  Beryllium
118  Cadmium
121  Cyanide
126  Silver

Non-Toxic Metals

     Tin
                                   VI-41

-------
                                  TABLE 6-11 (Continued)
                POLLUTANTS DETECTED AT LEVELS TOO LOW TO REQUIRE TREATMENT
                           EXTRUSION AND IMPREQilATION QUENCHES
Parameter

Toxic Organics

004  Benzene
039  Fluoranthene
044  Methylene Chloride
066  Bis(2-ethylhexyl)Ehthalate
072  Benzanthracene
073  3,4-Benzopyrene
075  11,12-Benzofluoranthene
076  Chrysene
078  Anthracene

Toxic Metals

119  Chromium
123  Mercury
125  Selenium

Non-Toxic Metals

     Aluminum
     Manganese
     Vanadium
     Boron
     Barium
     Molybdenum
     Yttrium
     Cobalt
     Iron
     Titanium
     Magnesium

Other Pollutants

     BOD
     Ehenols
Mean Concentration mg/1
       0.01
       0.011
       0.034
       0.533
       0.013
       0.012
       0.01
       0.01
       0.011
       0.013
       0.0012
       0.005
       0.242
       0.011
       0.016
       0.055
       0.035
       0.025
       0.0043
       0.034
       0.424
       0.002
       3.62
       7.67
       0.015
    Plow Weighted
Mean Concentration mg/1
       0.01
       0.01
       0.014
       0.047
       0.01
       0.01
       0.01
       0.01
       0.01
       0.013
       0.001
       0.003
       0.239
       0.0038
       0.03
       0.062
       0.018
       0.008
       0.003
       0.01
       0.104
       0.002
       4.23
       5.69
       0.016
* These parameters do not require treatment because (1) the raw waste concen-
  tration is less than the daily maximum figure (See Table 6-12), or (2) no
  performance data is available for treatment of these parameters.
                                      VI-42

-------
APPLICABLE TREATMENT TECHNOLOGIES

These paragraphs  contain  a discussion  of  alternative  treatment
schemes  for  reducing the  pollutant  levels discharged  from  the four
wet processes associated  with  the manufacture  of  carbon  and  graphite
products.  All  treatment  alternatives  presented use standard/ proven
treatment technologies which are discussed in  detail  in  Section  XII.

Recommended  Treatment Systems

Two levels of treatment are presented  for each water  discharging
process  used in carbon and graphite product manufacture.   The Level
1 treatment  consists of end-of-pipe schemes to reduce pollutant
loads prior  to discharge.  Level 2  treatment permits  total recircu-
lation of process water.

Identical treatment is recommended  for both extrusion and  impreg-
nation quench streams.  Two levels of  treatment have  been  recom-
mended.  The Level 1 treatment schematic  is presented in Figure
6-2 and  consists  of skimming and contract hauling of  sludge.  Pro-
visions  for  settleable solids  removal  is  also  included.  The
quench stream Level 2 recycle  treatment schematic is  presented in
Figure 6-3 and consists of a clarifier for settling with oil
skimming.  Recycle presents the likelihood of  increased  oil  and
solids concentrations requiring removal to prevent pollutant build-
up.  Polymer addition is  recommend  for improved solids removal
for applications where high TSS is of  concern.

For machining, grinding and scrubber effluent  waste'waters, two
levels of treatment have  been  recommended.   The Level 1  treatment
schematic is presented in Figure 6-4 and  consists of  a clarifier
with solids  and oil removal.   The Level 2 system  schematic is pre-
sented in Figure 6-5 and  is identical  to  Level 1  but  includes re-
cycling.  Recycle in this application  requires polymer addition
to prevent excessive TSS  build-up in the  returned coolant.   Level
2 without oil skimming has been observed  in industry.  Oil skim-
ming is  recommended for those  applications where  increased con-
centrations  of oil and grease  in the returned  coolant could  become
absorbed by  the machined  carbon and affect product quality or ease
of handling.

Performance  of Recommended Treatment Systems

Level 1 has  been observed for  extrusion and impregnation quenches
within the industry and sampling has verified  separator  effective-
ness in  reducing oil and  grease discharge levels".  (Tables
6-7 and  6-8).  Level 2 treatment for extrusion and impregnation
quenches achieves zero discharge of pollutants.
                              Vi-43

-------
      011 Separator
           I
      SolIds Removal
                          011
Discharge
         FIGURE  6-2
LEVEL 1  EXTRUSION AND IMPREGNATION QUENCH
TREATMENT SYSTEM FOR CARBON AND GRAPHITE
             SUBCATEGORY
             VI-44

-------
                              Recycle
   Polymer.
  Addition
                    Clarifier
                    T
               Solids Removal
Haul  Oil
                FIGURE  6-3

LEVEL 2 EXTRUSION AND IMPREGNATION QUENCH
TREATMENT SYSTEM FOR CARBON AND GRAPHITE
            SUBCATEGORY
              VI-45

-------
                      Recycle
Polympf _...
Addition
»
Clarifier


               f
•Haul Oil
         Solids  Removal
               FIGURE  6-4

LEVEL 2 MACHINING, GRINDING, AND SCRUBBER EFFLUENT
      TREATMENT SYSTEM FOR CARBON AND GRAPHITE
                   SUBCATEGORY
                    VI-46

-------
    Polymer
   Addition"
                      Clarifier
                      I
   •Discharge
•Haul Oil
               Solids Removal
                 FIGURE   6-5


LEVEL 1  MACHINING, GRINDING, AND SCRUBBER EFFLUENT

     TREATMENT SYSTEM FOR CARBON AND GRAPHITE

                    SUBCATEGORY
                   VI-47

-------
Level 1 treatment of machining, grinding, and scrubber effluent
has been observed in industry without oil skimming and sampling
has verified that a clarifier without polymer addition can main-
tain a TSS level of less than 24 mg/1 (Table 6-9).

Level 2 treatment of extrusion and impregnation quench streams has
not been observed in industry, but discussion with industry repre-
sentatives has indicated that recycle would not affect product
quality.  The only reservation expressed by industry was that the
recycled water may require cooling to prevent a build-up of heat
in the quench tank.  A typical quench tank operates at 30-35°C
(85-95°F) and uses make-up water of 15-20°C (60-70°F).

Performance figures are based upon data from treatment component
performance observed in other industries.  This performance data
is applicable to the Carbon and Graphite industry.  Section XII
describes the treatment components and systems and the typical
performance levels achievable by each component and system.
System performance is presented in Table 6-12 for Level 1 systems,
Level 2 is total recycle.

Estimated Cost of Recommended Treatment Systems

The procedures and process assumptions for determining estimated
costs for the recommended treatment system components are discussed
in Section XII and Section XIII of this report.  Tables 6-13 to
6-24 present estimated costs for each of the recommended treatment
systems previously discussed.

Costs have been estimated for two types of waste (1) machining,
grinding and scrubber wastewater and (2) quench wastewaters, for
both the Level 1 and Level 2 treatment systems.  Three different
flow rates were used for each waste type to present the variation
in system costs resulting from changes in system flow rates.  The
three flow rates for each waste stream are characteristic of a
small, medium, and large wastewater discharge within the Carbon
and Graphite industry for both types of waste streams.

BENEFIT ANALYSIS

This section presents an analysis of the industry-wide benefit
estimated to result from applying the two levels of treatment
previously discussed in this section to the total process waste-
water generated by the Carbon and Graphite subcategory.  This
analysis estimates the total amount of pollutants that would not
be discharged to the environment if the two levels of treatment
were applied on a subcategory-wide basis.  An analysis of the
benefit versus estimated subcategory-wide cost for each of the
treatment levels will also be provided.
                                Vl-48

-------
         
-------
                CM
                a
                          Eecycle - Zero Discharge
                  8
      <
                      iH   in   in   oo
                      oo   o   in    •
                       .    •    .   r-
                      O   O   O   «H
                                          •H   O
      en
  CQ
CM
s
a
      &
            m
M
      0)

      (0
    a
      o
      n
              o

              o
CM

 •
o
                                  ro
                                  CM
                                          in
                                           •
                                          in
                                  O
                              in
                               •

                              in
      6
                              in
                                   •   *
                          o   IH   in
                              in   rH



                              ro   CM
                              in
                               •
                              •<*
                  &
                                  CO
                                  •o
          1
                          1
    -   fi
    O   J3

    i   *
    fO   CJ


    II
    en   o

    73   -a
                                          0)

                                          .8
10


3
                                                            (U
                                                            1
                                      •a
                                      r-l
                                      •H


                                      I

                                      4J
                  a
                      o
                      CM
              CM

              CM
CO
CM
                                    VI-50

-------
«*
r-
CM
vo
vo
I
        8
        00
     5   a
     VO    •
      •   vo
                    VO   fH
in
*!•
en
                                              vo
§
 I

w
     a   S   «'
     §4   2   2 1
     CO   O   3!

E-<   8   £«   52!
to    _   rf   Z!

B   S   U
                                      S
a
03
          g
                    VI-5JL

-------
o
vo
en

s
CO

cT
o
o

ro
CM
CM
iH
CO


in



01
        CM
   CM    VO
   O    O
   a\     •
    •    art
   OO    00
   p~    vo
   ao    oo
   r-    r-t
o
00
en
 •
00

3
in
o
 *
o
        vo
        00
        in
VI-52

-------
00
a\
vo
c
o
o
in
 I

w
             ro
              •
             CN
                          O

                          IT)
                          CO
                          CN
oo
o
in
 •
in
ao
••a1
rt<
fM
                          §    g
                                      s
                  £5    < H    ts

             w   *C   a      §
             t*   3    § £2   -*
             to   o    i« 2    _
             Q   M       M    Q
             O   frn    O Q    2

             j   S    S3    J

             p   a    H.N    ^
                                              vo
                                              r-
                                              vo
                                              ro
                                              vo
                 VI-53

-------
         cr>
         in
         «a«
         CO
                     ro
                     vo
vo

tn
      ro
      oj
                           vo
                           
                           CM
               VO    VO
               CM    •-!
                •    CO
               CJ>     .
               oi    in
               
                             in
                             vo
                             04
OJ
vo
o
•
-------
         o
         vo
         en
                    in
                    oo
O
en
                          oo
                          ao
                          in
                          in
      CM
      t-
                                        in
                                        en
                                              vo
                                              CM
CM    •—I    i-H
en    i-t    o
in    CM    en
CM    CM    i-H
         o
         o
         o
         •fl"
         
m
oo
CM
      in
      r»
      CO
       •
      in
      in
      en
              O
              VO
                    O
                     •
                    o
                                              CM
           en
     CM    o
     o    oo
     •H    oo
                          CM
              in          vo
              CM    rH    O
              I-H    in     «
                •    ro    o
                                  vo
                                  CO
                                  CM
                                              CO
                         VI-55

-------
         CN

         OO
                       CM
                       VO
                            CO
                            VO
     co
     vo
                                    in
                                    VO
                                    in
                                    CM
                                    oo
                                    CO
              CO
               •
              vo
              CM
              O
              in
                                                  oo
                            m
                            CN
                            in
                                                  oo
                                    oo
                       CO
                                          in
                                          co
                                                  in
03
^
on
vo
.§
co
         in
         CM
         co
         in
CM
.H
CO


3
in
r»-
co
in
CM
vo
a\
                            00
00
^r
vo
 •
m
**
oo
vo
co
co
CO
 •
VO
CM
in
        in
        •r*
        oo
                                                  vo
                                                  CM
                                                  in
                                                  vo
                         VI-56

-------
83
CO
o
00
a\
in

cT
oo
in
             r-
             oo
             ro
             in
             oo
                         in
                         VD
oo
                               vo
     in'
     oo
CM
in
 •
o
in
ro
                  vo
                  00
                  in
                                           co
                                           ro
                         B
                               VI-57

-------
CM
o
in
$
o
in
CM
 •
vo
o
vo
cr\
                     CM
                     CO
                     r-
                     CM
     o
     in
     CM
     CM


o   m
iH   CM
CM
in
oo
 •
in
r-
vo
                                       in
                                       in
                                       CO
CO


 •

O

iH


CO
g
u
 i
ta
                          VI-58

-------
£3!
                           03
                           O
                           O
                           c
                           o
                           09
                           m
                           CM
                                  10
§
vo
CM
 •
TT
O
o
01
                                                   **>
                                                           vo
                         o
                         in
CM
O
o
 •
vo
co
CM
S
CO
a\
in
                                  M
                                                     VI-59

-------
        m
        VO
                      f-i   vo
              in    co
              VO    iH
              o    a\
              00    iH
                                   vo
                                   CO
                                         01
                                         m
                                         CM
                                                 oo
                           CM
                           VO
                           in
        o
        o
        CO
        CM
              o
               •
              10
                   8
                   in
              o
               •
              CM
                   O
                   s
o
oo

-------
        in
        CN
         •
        vo
        o
        in
        vo
        ro
             in
               •
             en
             O
             in
                  in
                  CN
o
on
                          CN
in
en
 •   vo
n   in
vo     >
CN   in
oo   eo
vo
CN
 •
o
VO
CN
vo
in
        o
        o
        en
        vo
                     VO
             oo
             in
                  o
                  00
        o
         •
        VO
        r~
        CM
                                       o
                                       o
                                O
                                o
                                               r-
                                               vo
m
CN
CN
•*
o
o
o
O
in
CN
 •
vo
o
vo
en
CN
rH
CN
00
0
rH
O
in
CN
•
rH
CN
en
in
CN
n
in
en
•
r-
co
en
r-
rH
3
in
•
in
00
vo
00
in
CN
CN
en
in
                     8
                          cS    §O
                     0   g   gs   g
                     J   H   M J   7j

                     EH   H  - S X   CD
                     M   K   K W   S


                     O   Q   O      W
                               VI-61

-------
                                ro
                                en
                                rH
                                CM
                                                    Cft
                                              •<»•    CO
                                              CN    OvJ
                                              CJ    CM
                                              00    CO
                                                            in
                                                            vo
                                          CN
                                          oo
                                          oo
                                                                  in
                                                                          oo
                                O
                                J
                        CO
o
CD

cT
O
oo
co
01
                                CO
                                CTl
                                              CO
                                              in
                                              vo
                                                    oo
                                                    CO
oo
cs
o
O
in
        co
        •H
        vo
              0>J
              oo
              oo
                                                                  CO
                                                   vo
                                                   o
                                                                          vo
                                              8
                                                                  8
                                en



                                M
                                                  VI-62

-------
Industry-wide Costs

By multiplying the cost of each level of treatment at various flow
rates by the number of plants in each flow regime in the  industry,
a subcategory-wide cost figure is estimated  (Table 6-25).  This
figure represents the total cost of each treatment level  for the
entire Carbon and Graphite subcategory.  This calculation does not
make any allowance for waste treatment that  is currently  in-place at
Carbon and Graphite facilities.

Industry-wide Cost and Benefit

Table 6-26 presents the estimate of total cost to the Carbon and
Graphite subcategory to reduce pollutant discharge.  This table also
presents the benefit of reduced pollutant discharge for the Carbon
and Graphite subcategory resulting from the  application of the two
levels of recommended treatment.  Benefit was calculated  by multi-
plying the estimated number of gallons discharged by the  subcate-
gory times the performance attainable by each of the recommended
treatment systems as shown in Table 6-12.  Values are presented for
each of the selected subcategory pollutant parameters.

The column "Raw Waste" shows the total amount of pollutants that would
be discharged to the environment if no treatment was employed by any
facility in the industry.  The columns under.Levels 1 and 2 show
the amount of pollutants that would be discharged if each level of
treatment were applied to the total wastewater estimated  to be dis-
charged by the carbon and graphite subcategory.

The total amount of wastewater .discharged from each level of treat-
ment is also presented in this table to indicate the amount of pro-
cess wastewater to be recycled by each of the levels of treatment.
Process wastewater recycle is a major step toward water conservation
and reduction in pollutant discharge.
                                  VI-63

-------
                          TABLE  6-25
               Carbon and  Graphite  Subcategory
                 Industry-wide  Cost Analysis
             Extrusion and Impregnation  Quenches
Investment*
Annual Costs
     Capital Costs
     Depreciation
     Operation  & Maint.
     Energy and Power

Total Annual Cost
 LEVEL 1
2429578.1

 204851.45
 485915.61
 390493.48
      0.0

1081260.6
 LEVEL 2
9380265.4

 790892.7
1876052.9
 658505.4
  57495.1

3382944.8
           Machining, Grinding, and Scrubber Effluent
Investment*
Annual Costs
     Capital Costs
     Depreciation
     Operation & Maint.
     Energy and Power

Total Annual Cost
 LEVEL 1
3369762.5

 284123.42
 673952.5
 303572.15
   2224.586

1263872.8
 LEVEL 2
3549162.5

 299247.0
 709832.5
 474862.7
   4824.56

1488766.8
* Based on 26 plants estimated to discharge process wastewater
  from these processes.
                                 VI-64

-------
                             TABLE 6-26
                  Cartoon and Graphite Subcategory
              Didustry-wide Cost and Benefit Analysis
             Machining, Grinding, and Scrubber Effluent
Parameter
Plow (Million liters/year)
120  Copper
122  Lead
128  Zinc
     Ibtal Suspended
       Solids
     total Organic
        Carbon
     Oil and Grease
     Iron
     Aluminum
Annual Cost
                Extrusion and Impregnation Quenches
Plow (Million liters/year)      5980          5980
     Oil and Grease             47421.4       NC
Raw Waste
kg/year
304.2
370.82
66.62
54.15
186200.0

107534.7
3437.5
1673.1
542.4

Level 1
kg/year
304.2
247.6
15.21
54.15
5414.8

NA*
3346.2
242.5
.NA
1081260.6
Level 2
304.2

%
1
I
q
I'1
!


3382944
            5980
            Recycle-Zero Discharge
Annual Cost
1263872.8   1488766.8
NC - No Change In Concentration Due To Treatment
*NA - Not Available
                                     VI-65

-------

-------
                        SECTION VII
              DIELECTRIC MATERIALS SUBCATEGORY
INTRODUCTION

This discussion of the dielectric materials subcategory consists of
the following major sections:

     Products
     Size of Industry
     Manufacturing Processes
     Materials
     Water Usage
     Production Normalizing Parameters
     Waste Characterization and Treatment in Place
     Potential Pollutant Parameters
     Applicable Treatment Technologies
     Benefit Analysis


Data contained in this section were obtained from several sources.
Engineering visits were made to six plants within the  industry.
Wastewater samples were collected from 3 facilities.   A total of
63 dielectric materials manufacturing plants were contacted  in
this survey by telephone.  These plants include manufacturers
that use dielectric materials in wet capacitors and  transformers.
A literature survey was also conducted to ascertain  differences
between types of dielectric materials, process chemicals used, and
typical manufacturing processes.

PRODUCTS

This product subcategory consists of both dielectric-containing de-
vices such as oil filled transformers and capacitors in addition
to the miscellaneous dielectric products themselves  (except  por-
celain and glass) such as mica paper (used in fixed  capacitors),
phenolics, laminates, fiberglass, polyesters, and rubbers.   There
are three major wastewater producing products in the dielectric
subcategory:  oil filled transformers, oil filled capacitors, and
mica paper dielectric.  Only those processes unique  to the E&EC
category will be discussed, other processes are considered in
other development documents, particularly, the Metal Finishing
Subcategory.

Oil Filled Transformers for Power, Distribution, and Special
Applications

Transformers can be classified into two groups, namely oil filled
("wet") transformers and non-oil filled  ("dry") transformers.  Most
                               VII-1

-------
 of  the  larger transformers  such  as  power and-distribution  transfor-
 mers  are  oil  filled.   Small high-voltage transformers  such as  auto-
 motive  ignition  coils  are wet while virtually all  of the smaller
 low-voltage transformers are dry.

 Electric  power is  transmitted by increasing  the  voltage at the
 generator, transmitting  it  to distant  locations  via high voltage
 transmission  lines, and  then reducing  the voltage  successively at
 substations,  at  primary  feed substations, and at distribution  points
 to  the  consumption level.   Thus, the transmission  and  distribution
 of  electric power  requires  a substantial number  of transformers, al-
 most  all  of which  are  oil filled.   Power and distribution  transformers
 account for a sizable  part  of the transformer industry (63% of the
 total dollar  value of  transformer sales).

 Small low voltage  transformers are  used  as fluorescent lamp bal-
 lasts (accounting  for  10% of the total dollar value of transformer
 sales).   Other common  uses  of low voltage transformers include
 signalling and doorbell  transformers,  machine tool controls,
 general industrial and commercial uses,  power regulation,  and
 instrument transformers.

 Production of the  different classes of transformers is summarized
 below in  terms of  percent of total  annual dollar value.  This  in- •
 formation was obtained from the  1977 Department  of Commerce Census
 of  Manufactures  (Preliminary Statistics).

                                         % Total  Annual
                                          Dollar  Value
Power and distribution
  transformers

Fluorescent lamp ballasts

Specialty transformers  (except
  fluorescent lamp ballasts)

Power regulators, other trans-
  formers , parts

(Other not specified by type)
 63.0%

 10.0%


 16.4%


  8.0%

  2.6%

100.0%
The total annual value of transformer shipments for 1977 is estimated
to be $2,084,000,000.

Oil Filled Capacitors

Oil filled capacitors can be separated into two categories by size:
larger sized capacitors generally used for power factor correction
and smaller sized capacitors used for electric motor control and
in fluorescent lamps.
                              VII-2

-------
 Production  of  the  different  classes  of  transformers  is  summarized
 below in  terms of  percent  of total annual  dollar  value.   This  in-
 formation was  obtained  from  the  1977 Department of Commerce  Census
 of  Manufactures (Preliminary Statistics).
 Shunt  and  series power  capacitors,
   units  and  equipment,  1/2  KVA  and
   above, and accessories  for ,power
   factor correction  and other low-
   frequency  a,c. applications.

 A.C. capacitors, except electro-
   lytic; general purpose, for
   motors,  controls,  etc.; capaci-
   tors for fluorescent  lamp
   ballast; and other capacitors.

 Capacitors for industrial use
   except for electronic appli-
   cations.
% Total Annual
 Dollar Value

     41.6%
     57.7%
      0.7%
                                             100.0%

The total annual value of transformer shipments  is estimated  to be
$154,900,000 for 1977.

Mica Paper Dielectric

Mica paper is a dielectric material used in  the  manufacture of fixed
capacitors.  Fixed capacitors are layered structures of conductive and
dielectric (insulating) surfaces.  The layering  of fixed capacitors
is either in the form of rigid plates or in  the  form of thin  sheets
of flexible material which are rolled.  Fixed capacitor types are
distinguished from each other by type of conducting material, dielec-
tric material, and encapsulating material.   Mica paper is one of the
dielectrics used in fixed capacitors and is  included in this  section
because of the large quantities of process water required in  its pro-
duction.  No other mica applications have been addressed in this docu-
ment .

Miscellaneous Dielectrics

Miscellaneous dielectrics are summarized in  Table 7-1.  Table 7-1 al-
so presents a summary of the manufacturing processes used in  the pro-
duction of miscellaneous dielectrics, process water used, and waste-
water treatment.  This listing is based on telephone contacts with
32 plants.  Most electrical insulators are manufactured of phenolic,
                             VII-3

-------
      •a
      LI
      8
            ii


                            i .8
                            0) ^
%
                                  S1

                                  jj
                                  CO
                                  .?
                                  :i   e
                                             £

                                             I
                                                     4)
                                                     a
                                                           il
                                                           s!
                                                                 S
                                                                 i
                                                                       S   S
                                                                       •q   -o
                          I1
                          •o
                                                                       S1
                                                                       •H

                                                                       S
                                                                                 •     8
Q



fc
      €
            2

            I

                                  s     §
                           S    a
                           4J    *-*
                  J&         S1*
                  ~K   ^     PI
            £k*     ^   C^ ^**   M4 I
0}   CO i
JJ   JJ j



    *
S   U55   IS
CU   Cti U   Cu
                I
                at
            ?«•  H1   S?
            •*^ J3  «*n   «^4
                                             2
                                              EC?

                                              S3
                                                             8
                                                             >.
                                                                   M
                                                          +    —»   01
                                                         O    O   (0
                                                         •*H    ^4   *H


                                                               3   S1
                                                                           M $
                                                                           Di 
-------
laminates, fiberglass, polyesters, or molded dense rubber.  Insula-
ting parts manufactured of rubber and various plastics are made by
molding, cutting, stamping, extruding, punching and various machine
forming operations.  An undetermined amount of water is used
in quenching, spray contact cooling or wet machining.  These
products and manufacturing processes are covered under existing
or proposed documents.  Therefore, miscellaneous dielectrics
will not be discussed further in the E&EC category.

SIZE OF INDUSTRY

The size of the dielectric materials industry is presented in the
following paragraphs in terms of number of plants, number of produc-
tion employees, and production rate.  Each of these values represents
is estimated based upon data collected from visited facilities, tele-
phone surveys and literature surveys«

Number of Plants

Transformers -• It is estimated that 280 plants are engaged in the
manufacture of both wet and dry transformers.  This estimate is
based on the following three sources of information:

          1977 Dun and Bradstreet listing of companies engaged
          in business within the SIC 3612 category.  Known non-
          manufacturers (distributors) were removed from the
          listing.  Prom this modified listing, 350 plants are
          estimated to be engaged in the manufacture of trans-
          formers .

          Department of Commerce 1977 Census of Manufactures
          (Preliminary Statistics).  A total of 280 plants were
          estimated to be engaged in the manufacture of trans-
          formers .

          Department of Commerce 1972 Census of Manufactures.
          A total of 210 plants were estimated to be engaged
          in the manufacture of transformers.

Oil Filled Capacitors - It is estimated that 30 to 50 plants are
engaged xn the manufacture of oil filled capacitors.  This estimate
is based on the following two sources:

          Department of Commerce 1977 Census of Manufactures
          (Preliminary Statistics).  A total of 30 to 50
          plants were estimated to be engaged in the manufac-
          ture of oil filled capacitors. *

          Department of Commerce 1972 Census of Manufactures.
          A total of 36 to 60 plants were estimated to be en-
          gaged in the manufacture of oil filled capacitors.
                               VII-5

-------
Mica Paper  Dielectric  -  It  is estimated  that  12  to  18 plants are en-
gaged  in  the manufacture of mica paper.  This estimate  is based on a
telephone survey of manufacturers producing mica paper.

Number of Employees

Transformers -  It  is estimated  that between 32,700  and  46,600
production  employees are engaged in the  manufacture of  both wet
and dry transformers.  These estimates are based on the  follow-
ing sources:

     .    Department of Commerce 1977 Census  of  Manufactures
          (Preliminary Statistics).  A total  of  32,700 produc-
          tion  workers were estimated to be engaged in  the man-
          ufacture of  transformers.

     .    Department of Commerce 1972 Census  of  Manufactures
          lists 46,620 production workers engaged in the manu-
          facture of transformers.

Twenty-nine transformer plants  were visited or surveyed by telephone.
Each plant employs between  35 and 4,000  production  employees.  The
majority  of plants contacted have between 140 and 300 production em-
ployees .

Oil Filled Capacitors  - It  is estimated  that  between 2,200 and 4,800
production employees are engaged in the  manufacture of oil filled
capacitors.  These estimates are based on the following sources:

          Department of Commerce 1977 Census  of  Manufactures
          (Preliminary Statistics).  A range  of  2,200 to 3,800
          production workers were estimated to be engaged in
          the manufacture of oil filled  capacitors.

          Department of Commerce 1972 Census  of  Manufactures.
          A range of 2,800  to 4,800 production workers were
          estimated to be engaged in the manufacture of oil
          filled capacitors. •

Eight oil filled capacitor  plants were visited or surveyed by tele-
phone.  Each plant employs  between 30 and 350 production workers.

Mica Paper Dielectric  - It  is estimated  that  between 250 and 450 pro-
duction employees are  engaged in the manufacture of mica paper dielec-
tric.  Typical plants  surveyed  employ between 20 and 40 production
workers.  These estimates are based on a telephone  survey of manufac-
turers producing mica  paper.

MANUFACTURING PROCESSES

The manufacturing processes for dielectric materials are described in
the following paragraphs.   The  use of dielectric fluids in wet trans-
                               VII-6

-------
formers and capacitors, and the manufacture of mica paper dielectric
are discussed in terms of typical production processes for each of  '
these products.                >        ,                              ,

Wet Transformers

Power transformers are the largest transformers made and are used at
power generating stations to increase voltages to high levels for
transmission (e.g. 765,000 volts).  A typical process flow diagram
for wet power transformer manufacture is given in Figure 7-1.

The main operations in manufacturing a power transformer are common
to all transformer manufacture.  They are the manufacture of a steel
core, the winding of coils, and the assembly of the coil/core on some
kind of frame or support.  A significant difference between "dry" and
"wet" transformer manufacture  is the need for a container or tank
to contain the dielectric fluid in the case of "wet" transformers.
In addition, the larger wet transformers have radiators attached to
air-cool the dielectric fluid.  Oil filled transformers must be free
of moisture, because any water diminishes the effectiveness of the
dielectric and can lead to a short circuit failure.

Coil-winding starts with the manufacture of a cylindrical pressboard
or phenolic plastic form, which is saturated with transformer oil.
Copper wire, wound with 12-18 wraps of paper insulation, is wound
around the coil form.  A series of paper and paperboard or phenolic
plastic spacers is.added to the form during winding to separate the
coils.  Upon completion of winding all coils on a form, the windings
are compressed axially in a press to the required size.  The wound
coil is then heated and vacuum dried to remove residual moisture.
Flooding the coil with oil impregnates the coil.  Finally the coil
is compressed a second time.

In the four wet transformer plants visited, transformer oil is care-
fully handled to prevent its escape into the environment.  Vacuum
impregnation processes use chamber flooding to introduce the oil
into the coil assembly.  The process takes several days, and ade-
quate time is allowed to let free oil drip off the coils and hand-
ling equipment while still inside the chamber, s Minimal evidence of
oil spillage was observed anywhere in the manufacturing plants.
Solid absorbents were used for collecting the small quantities of
spilled oil.

Core fabrication starts by cutting thin strips of silicon steel to
size.  These strips of steel are stacked to form the core.  Coils
are then placed over legs of the core.  The top yoke is placed,on
the top of the assembly.  Kraft paper and/or phenolic spacers are
added to the assembly as an insulator, the complete assembly is dried
in a chamber, and transformer oil is added manually to saturate the
assembly.
                                  VII-7

-------
          Hake Coil
                              Hake Core
                                                  Make Tank
                     Assenbly
Cut Grain
Oriented Silicon
Steel


Assemble core
. By Stacking
Steel Leaves
Core
iy
)ver

Processes with uastewater
discharges are unknown
                          FIGURE 7-1

                 OIL FILLED TRANSFORMER MANUFACTURE

                               VII-8

-------
Tank fabrication  starts  by  shot  blasting carbon steel plates.  The
plates are  cut  to size by shearing  or burning with a torch.  Smaller
steel parts are deburred in a  water solution and rinsed in a rust
inhibiting  solution.  The tank is welded using submerged arc
welding.  Radiators,  bought from an outside supplier, are
welded to some  tanks  and bolted  to  others.   The tank is deter-
gent washed and rinsed.  An epoxy primer is applied and then baked on.
The tank is then  coated  with an  alkyd finish coat.  Core and
tank fabricating  and  welding process operations are discussed
further under the Metal  Finishing Category.

Pans, a control unit  and, in some cases, radiators are attached in
pre-assembly.  The coil-core assembly is placed into the tank, con-
nections are made and bushings are  attached to the unit in final
assembly.  The unit is evacuated to remove  any water vapor and then
filled with oil.   The completed  transformer is then tested.

Oil Filled Capacitors

Large oil filled  capacitor  containers are produced manually and
are made of steel or  aluminum.   Large oil filled capacitors are often
used in corrosive environments,  and their containers are often pro-
tected by phosphate or chromate  surface  treatment and subsequent paint-
ing.  Container preparation for  large oil filled capacitors can dis-
charge cleaning and coating wastes.  Special ceramic insulators are
used to separate  the  cover  from  the terminals.

Small oil filled  capacitor  containers of aluminum or steel are
fabricated on a dry automatic  impact extruder.  The containers for
small oil filled  capacitors are  usually  unfinished.  Hence, there is
no wastewater discharge  associated  with  their fabrication.  Figure
7-2 depicts a typical production process.  In addition, small oil
filled capacitors utilize a number  of automatic operations to pro-
vide insulated terminals that  connect to the interior wiring.  These
operations usually do not have a wastewater discharge.

The electrical leads  of  the winding are  manually soldered to the
terminal connections  on  the cover of all capacitors.  The covers are
welded to the capacitor  container to form a sealed capacitor.  There
is a fill hole in the cover that is left open for subsequent oil fil-
ling operations.   The soldering  and welding operations do not usually
result in a wastewater discharge.

The conditioning  process for small  oil filled capacitors takes place
after the sealed  capacitors are  loaded into a filling chamber.  The
sealed capacitors are conditioned prior  to  filling by baking at
moderate temperatures under heavy vacuum for several hours.  While
still under vacuum, the  chamber  is  flooded  with dielectric fluid.
The dielectric enters the fill holes until  the capacitors are com-
pletely filled.   The  chamber is  then allowed to drain and the small
oil filled capacitors are removed.   After removal, the fill holes are
                               VII-9

-------
                         CONTAINER
                       MANUFACTURE
                         SURFACE

                        TREATMENT
                            I
                         EXTERIOR
                         PAINTING
                       PHOSPHATE
                          OR
                       CHROMATE
                       (covered under MFC)
                         DIELECTRIC
                           OIL
                         FILLING
                          DETERGENT

                           WASH
                            I
                          WATER
                          RJNSE
                            1
                          SOLDER
                          LEADS
                       CONDITIONING
                            1
                        ELECTRICAL
                        EVALUATION
                           SHIP
                                                  	*• Denotes
                                                       Wastewater
                                                       Flow Paths
. -
'-if**
         FIGURE 7-2

OIL-FILLED CAPACITOR MANUFACTURE
                           VII-10

-------
 soldered  closed.   Large oil filled capacitors are filled individually
 with  a  hose.   A special one way valve prevents the dielectric fluid
 from  escaping.   These  operations are dry and do not result in "a waste-
 water discharge.

 Oil filled  capacitors  are  usually cleaned with solvent after filling
 with  dielectric fluid.   The solvent is recovered, distilled, reused.
 One facility  cleans  the exterior of the small oil filled capacitors
 with  a  water  wash  which results in a wastewater discharge (this
 cleaning  process has been  eliminated and a solvent cleaning step
 has been  instituted  since  the  time of the plant visit).  Large
 capacitor manufacture  did  not  result in a wastewater discharge at
 any of  the  visited facilities.

 Mica  Paper  Dielectric

 Mica  paper  manufacturing requires significant quantities of process
 water.  This  water is  used for  carrying mica in a slurry.  Figure 7-3
 depicts a typical  production process.

 Mica  is heated  in  a  kiln and then placed in a grinder where water
 is added.   The  resulting slurry is passed to a double screen sepa-
 rator where undersized  and oversized particles are separated.  The
 screened  slurry flows  to a mixing pit and then to a vortex cleaner.
 The properly  sized slurry  is used in a paper-making machine where
 excess water  is drained or evaporated.  The resulting cast sheet of
 mica  paper  is fed  on a  continuous roller to a radiant drying oven,
 where it  is cured.   From there,  the mica paper is wound onto rolls,
 inspected and shipped.

 Mica  particles  too fine for use are discharged in process wastewater.
 All process wastewater  is  treated by settling.

 MATERIALS

 Materials used  in  the dielectric materials subcategory are discussed
 in the following paragraphs.  Materials are listed in terms of their
 use in wet  transformers, oil-filled capacitors,  and mica paper dielectric,

Wet Transformers

 Materials used  in  the manufacture of oil filled  transformers are:

          Silicon  Steel  -  This  magnetic steel is wound or
          stacked  in sheets to  form the magnetic iron core.

          Copper Wire - Used to wind the primary and secondary
          coils,,of most transformers.

          Aluminum Wire  -  Used  to wind the coils of some trans-
          formers.
                               VII-11

-------
                                                       u

VII-12

-------
 Carbon Steel - Used for manufacturing transformer
 tanks or casings and for making radiators used in
 larger transformers.

 Insulating Paper and Paperboard - Used to insulate
 the coil wire and serve as spacers between windings.
 Paper board is used to form the inner cylinder of
 larger concentric coils or as a flat platform for
 flat interleaved type coils.   Kraft paper, the most
 extensively used insulating paper, is made from wood
 fiber;^manila paper from Manila hemp; kraftboard from
 wood fiber; and pressboard from wood and cotton.

 Laminated Phenolic Resin - Used for forming the inner
 cylinder of some coils and used as insulating spacer
 material.

 Hardwood (maple) - Used as insulated support in some
 power transformers.

 Ceramic  Bushings - Used for external connections to
 the primary and secondary transformer windings.

 Varnishes,  Lacquers,  and Shellacs  - Used to coat windings
 and for  insulation of dry transformers to seal them from
 moisture.

 Enamel Coating - Used to coat some core steel before
 forming  the core.

 Paints  (Epoxys,  Alkyd coatings,  PVC coatings, Polyurethane
 paints,  etc)  - Used  to coat transformer cans or tanks.

 Nitrogen Gas  - Large  transformers  are filled with nitrogen
 gas  after the  unit  is tested  and drained of oil.   The trans-
 former is shipped  with N, under  a  slight positive pressure
 to  prevent  leakage of air and moisture  into the transformer,

 Light  Petroleum  Distillate  (similar to  kerosene) — Used  as
 vapor  to heat  coil-core  assemblies  to drive out moisture
 prior  to flooding with transformer  oil.

 Transformer Oils - Used  to  impregnate insulation  and
 spacers of  coil-core  assemblies of  large,  "wet"  trans-
 formers.

 Dielectric  Fluid - Most  oil filled  transformers  contain
 a highly refined petroleum oil similar  to  low viscosity
 lubricating oil.  Some  transformers  are  filled  with  a
gaseous dielectric fluid, e.g. perfluoroethane.
                         VII-13

-------
These dielectric fluids are basically organic liquids, such  as  lubri-
cating oil, used as an electrical dielectric  (or  insulator)  and  serve
as heat transfer media for cooling electrical components.  In the
E&EC category, dielectric fluids are used  in  larger  transformers,  and
oil filled capacitors.  In transformers, the  quantity of  fluid  re-
quired varies from about 35 liters to 105,000 liters.

Previously, polychlorinated biphenyl  (PCB) was  used  as the dielectric
fluid in practically all fluid  filled capacitors  and transformers.
The manufacture of PCB dielectric fluid  ended in  1978.  The  PCB  rule
prohibits PCB manufacture after July 1,  1979.   Problems related  to
PCB use as a dielectric fluid are discussed  in  Appendix >A of this
report.

Substituting other dielectric fluids for PCB  is required  by  law.
There are several fire resistant fluids  which are proposed as sub-
stitutes for PCB.  Table 7-2 presents a  summary of PCB substitute
dielectric fluids currently used or proposed  for  use in oil  filled
capacitors and oil filled transformers.  Di-n-octyl  phthalate is
widely used in fluid filled capacitors.  Silicone oils are probably
the most popular PCB substitute for transformer oils.

Oil Filled Capacitors

Materials required in  the manufacture of oil  filled  capacitors  are
similar to those of the transformers  listed  above.  These materials
are:

          Insulating Paper
          Polypropylene Sheet
          Aluminum Sheet
          Steel Casing
          Dielectric Fluids

Oil filled capacitors  utilize  the  same  dielectric fluids  as  trans-
formers with  capacities ranging from  a  few milliters to  as  many as
25 liters.  Capacitor  assembly  and  manufacturing  is  another  subcate-
gory.

Mica Paper Dielectric

Mica paper in its simplest  form is  pure mica, but for  some  applica-
tions, a lamination of  plastic  on  both  sides of the  mica  sheet  may be
required.  These  are  the  only  process  material  requirements  for the
production of mica paper.
                                 VII-14

-------







































CM
1
f**

w
jj
03
<
EH









































cn
EH
cn
Q
D
J
Cu
M
OS

o
J
w
M
Q

&3
g
M
cn
CO
D
cn

CO

04
O
3



63

M
64
:



ffl
cn
3
&4



CJ
IH
OS
EH
CJ
63
i-3
63
IH
G



































s
IH
O
04




g-i
2
IH
O





*

*2
<
EH
cn
2*
o
CJ


4J
01
o
e

•*>
o
•H
)J
4J
O
CD
iH
0)
•H
'O

Sj
O
4J
•H
O
rrj
a,
(0
u

s
o
o





rtj
2






o
CM
CM










m
.
in

01
M
O
4J
•H
0
(0
a
m
u

13
(U
}4
3
-U
o
m
H-l
3
C
iC
g

>i
^•f
JJ
C
o
(U






























•H
01
c
a
a
X
(U
c
M


•
04
o
a

&
4J
•H
3

rg
0)
iH
r^
•H
<4-l
0)
JJ
(0



































5-1
0)
3
O
Ou

CD
D>
(0
4J
rH
O
>
•C

•H •
JC (Q

5^1 Q
O 4J
tW *»H
o
•o m
JPi
(Q
O
•c
 *f^ t|^
03
T3 C
<1) <0
CO tl
O 4J



—
c:
•H

•a
0)
01
3

>i
«H
C.--'
O

§
o
0
4-1 •
3 01
jQ SJ
(U

•H
01
C
itH
4J «S — *
C ^ 04
O 4J O
•H jz a
Q 04 —
rH
ononyl
alate
01 x:
•H 4J
Sfi
CM
CD
'C
•rH
X
0 O
FO ^4
i
m x: c
rH O CD

4J c a
3 O'H
m £ G

-------
WATER USAGE

Host manufacturers of oil filled transformers and capacitors have
eliminated the use of water from their production steps.  Some of
them have accomplished this by employing solvent cleaners.  Other
manufacturers require water for the cleaning of transformer and
capacitor casings prior to painting and coating.  Cleaning, pain-
ting, and coating are processes included within the Metal Fini-
shing Category Document.  Some manufacturers perform  a  cleaning
operation on transformers and capacitors after filling  with dielec-
tric fluids.  These manufacturing processes will be discussed in
this section.

The production of mica paper dielectric is totally dependent on pro-
cess water.  Unlike oil filled transformers or capacitors, water
is used in large quantities throughout each step of production.

Transformers

From the 1972 Census of Manufactures, gross water usage is estimated
to be 198.8 million liters per day  (52 million gallons  per day) for
wet and dry transformer manufacture.  Approximately 63% of gross
water usage is recycled.  Only 3% of gross water used,  6.06 million
liters per day (1.6 million gallons per .day) is process water.
From plant contacts and visits, it was observed that  most of the
manufacturing process water used is for non-contact cooling water.
From these same sources, it was found that all process  water was
used in metal cleaning processes prior to coating.

From the 1972 Census of Manufactures, the amount of water discharged
which includes both process and non-process water is  estimated at
33% of gross water usage or 64.7 million liters per day (17.1 mil-
lion gallons per day).  Nine percent or 64.7 million  liters per day
(1.5 million gallons per day) of this discharged water  is estimated
to be treated.  As shown in Table 7-3, most process water used is
simply discharged without treatment.

All of the visited plants made use of process water only in metal
cleaning operations and conversion  coating  (see Table 7-3).  The
plants surveyed by phone indicated  that their transformer manu-
facturing either required no process water or required  use of
process water only in conjunction with metal coating  or electro-
plating operations.

Oil Filled Capacitors

Some water usage was observed in oil filled capacitor manufacturing.
Table 7-4 summarizes the survey results and shows that  two of  the
eight plants contacted use a detergent wash upon completion of the
capacitor fill step.  The single plant visited discharges 432,000
liters per day (114134 GPD) from this detergent wash  process and
phosphatizing.
                                    VII-16

-------
             a
             Nl
     I
 §  I
 (B  **4





:*-4  f-H


IS  8;
                             !*
                                                              '•§
S
u
O i
g!

a
  rn u>e o

     ^3
                    2n o
                    «"• Z I
                                               la JJ -
             ^fBllS
                   jS^JS
                   tatu
                                               I)t5 C
                                               Jl « O
                                               J~* >A'
                                               S-o-u
  SSS     i
&> a OQ
             "JfM  M
                   rrinvo  r~  coot  o >H N"> «r
                                              "S 8 8   8


                                              oil   I
                         &&&&£&&&£&£&&&&&£&

                     VII-17

-------
          1
                       •r-l  0)
                       JJ  4J
                       03 -H

                       3  T

                       7S
                               Q
                               (S)
                                    Q
                                    IS)
                                                 0)
                                                    >,
                                                    •R
                                                    I!
          I
          2
          •H
          O
          O
          o
                  6
o
ins'
                       •6
                       £s
yle
e
                               I
                                                                      ti (0
                                                                      fl-g
                                                                         "C

                                                                         *
                                                                         2
                                                                       O Oj

                                                                       (U (S

                                                                       M     •
                                                                       (0 0) 'D
                                                                      .c w  33
                                                                                 ft
g
          CM
          00
          O
          O
3   S
.3   Q
>   w
S?   "^

3   I
                        S
m
•ft   4J

                                to
                                4J
0)



Qj   O

-------
 The remaining manufacturers  contacted  do  not  use  process  water
 by either using  solvent  degreasing  when cleaning  is  required or by
 employing manufacturig techniques that avoid  the  need  for cleaning
 after filling.   The visited  capacitor  facilities  that  used a water
 wash after filling operations  are now  using a solvent  cleaning step
 and are not discharging  process wastewater unique to E&EC manufac-
 turing.

 Mica Paper Dielectric

 Water usage was  observed  in  all mica paper dielectric  manufacturing.
 Table 7-5 summarizes the  water usage,  which ranges from 3,506,000
 liters/day (926285.2 GPD) to 31,400 liters/day  (8295.9 GPD).   The
 water is necessary first  to  saturate,  separate, and  break down the
 raw mica into flakes and  then :to carry the refined mica through its
^deposition onto  the web of the paper machine.

 PRODUCTION NORMALIZING PARAMETERS

 Production normalizing parameters are  used to relate the  pollutant
 mass discharge to the production level of a plant.   Regulations ex-
 pressed in terms of this  production normalizing parameter are  multi-
 plied, by the value of this parameter at each plant to  determine the
 allowable pollutant mass  that can be discharged.  Meaningful pro-
 duction normalizing parameters for dielectric materials subcategory
 that have been considered are:

           Size,  complexity and other product attributes that affect
           the amount of pollution generated during manufacture
           of a unit.

           Manufacturing processes,  but differences in  processes
           for the same product result  in differing amounts of
           pollution.

           Production records, but lack of applicable data  may
           impede determination of production rates in  terms of
           desired normalizing parameters.

 Several  other broad strategies which have been developed  to deter-
 mine  normalizing parameters.   They are as follows:

           The process  approach •- In this  approach, the production
           normalizing  parameter is  a direct measure of the produc-
           tion rate for each  wastewater producing manufacturing
           operation.   These parameters may be  expressed as sq.m.
           processed per hour, kg of  product processed per hour, etc.
           This approach requires knowledge of  all the wet pro-
           cesses used  by  a plant because  the  allowable pollutant
           discharge rates for each  process are added to determine
           the  allowable pollutant discharge rate for the plant.
           Regulations  based on the  production  normalizing parame-
           ter  are multiplied  by the  value  of  the parameter for
           each process  to determine  allowable  discharge rates  from
           each wastewater producing  process.
                               VIi-19

-------
                 ta

                 §
                CJ
                CO
                                                    ra
   ca
                 ta
                                 CO
                                                     ca
                                                    co
                                                     c  a)
                                                    •H rH
                                                    r-i  3
                                                     0)
                                                    CO
                                                                  C  (0  (13
                                                                  O 4J  33
                                                    o
                                                    ffS    'O
                                                    0,    °i-l
                                                                   i a> IH
                                                                    co co
                                                        •

 JJ    00 O
«,C    n in
 RJ    «--  -
Q ffl  S
Oj &i  CU
u cs  o

O VO  VD
                                                       n
                                                    oo
                                                                 a
                                                                              (0
                                                                              <0
                                                                              O
                                                                              a

                                                                              UJ
                                                                                                                  (0
                CO
                           a
                    (1)
                          CO
                                                                                                         o
                                                                                                         (0
                                                                                                        •H
                                                                                                        'O
                                                                                        (Q
                                                                                        >
                                                                                        (Q

                                                                                        4J
                                              CO
                                              4J
                                              O
                                              (0
                                              CJ

                                              a)
                                                                 CN
                                                                              (0
                                                                              V
                                                                              4J
                                                                              a
                                                                              o
                                                                              •H
                                                                              •a   •
                                                                              c  ^
                                                                              •rH  
-------
           Concentration limit/flow guidance - This strategy limits
           effluent concentration.   It can be applied to an entire
           plant or to individual processes.  To avoid compliance
           by dilution,  concentration limits must be accompanied by
           flow guidelines.   The flow guidelines, in turn, are ex-
           pressed  in terms  of the  production normalizing parameter
           to relate flow discharge to the production rate at the
           plant.

The  following paragraphs present selected production normalizing
parameters for the dielectric materials subcategory and the rationale
used  in  their selection.

Wet Transformers and Oil Filled Capacitors

The manufacturing  processes used in the production of wet transformers
and oil  filled capacitors are similar in regard to dielectric fluid
cleanup.   In both  wet transformers and oil filled capacitors a waste-
water discharge results from cleaning the unit after filling.  Pol-
lutants  entering the waste  stream  are generated partly as a direct
result of  the washing and rinsing  of the exterior of the product to
remove excess dielectric fluid.

Much of  the  pollutant discharge is not directly related to production.
At one visited facility, for example, the treatment system is used
to remove  residual PCB  fluid from  contaminated plant grounds.  This
type of  discharge  can best  be regulated by determining an allowable
pollutant  discharge concentration.  Therefore, use of a production
related  normalizing parameter is not appropriate, and effluent
limitations  should be expressed in terms of concentration only.

Mica Paper Dielectric

Based upon the nature of the mica  paper manufacturing industry,  the
mass of  mica processed  has  been selected as the production normali-
zing parameter.  This selection is based upon the fact that the
principal  factor affecting  wastewater characteristics is the amount
of mica  produced.

The processes  used in mica  paper dielectric manufacturing requires
the use  of mica and  water only.  As  the mica is processed in-
to its final  form,  wastewater containing the inert mica is produced.
This wastewater production  occurs  only when the manufacturing proces-
ses are  operating.   Since several  different thicknesses of mica  paper
are produced,  the  area  of the paper  may not be indicative of the amount
of wastewater  generated.  This leaves the weight or mass of mica paper
produced as  the most applicable production normalizing parameter.
These data are  easily obtainable because they are collected by man-
ufacturers as  a means of controlling productivity of the plant.
                                     VII-21

-------
WASTE CHARACTERIZATION AND TREATMENT IN PLACE

This section will present the  sources of wastewater  in  the  dielectric
materials subcategory, sampling  results of  this wastewater,  and  treat-
ment currently in place at these  facilities.  Wastewater  produced
by mica paper manufacturing will  be discussed separately  because
of waste characteristics and treatment technology.

Process Descriptions and Water Use

Wet Transformers - Two types of  transformers are  manufactured:   wet
(filled with dielectric fluid) and dry.  Both types  of  transformers
use standard metal finishing processes.  Wet transformers use  wet
processes unique to this subcategory of the E&EC  category for
clean-up of dielectric fluid spills and management of residual
PCB fluid spills.

Oil Filled Capacitors - Oil filled capacitors require process  water
that is specific to the E&EC industry.  This process water is  used
in the clean-up of dielectric  fluid that spills or overflows when
the capacitor is filled and water used for  case wash.

There are two distinct sizes of  capacitors  that are  filled with  di-
electric fluid, and the technique of filling the  two categories  of
capacitors differs.  Larger capacitors are  filled individually through
a hose connection, and smaller capacitors are batch  filled in  racks
within a chamber, which is evacuated and then flooded with dielectric
fluid.  A small amount of spillage occurs when  disconnecting the fill
hose from the larger capacitors.   The  spilled dielectric  is generally
washed away with a solvent which is reclaimed.  This procedure does
not result in any wastewater discharge.

The racks of smaller capacitors  coming  from the  flooded chambers
are washed either by an organic  solvent which can be recycled  or by
a detergent wash and rinse.  At  Plant  ID  30082  the  detergent wash
may be recycled, but the rinses  are discharged.   This discharge
carries dielectric fluid  into  the environment.  However,  the
plant is now using a solvent washer  for  cleaning  these capaci-
tors with no discharge to waste  treatment.

Mica Paper Dielectric  - The manufacture  of  mica paper dielectric re-
quires inert mica and  water as process  materials.  The mica is ground
into fine particles and mixed  with water  into  a slurry.  This  slurry
is then cast into a sheet on  a moving  belt  and  the water is drained
and evaporated.  The mica sheet  is then  rolled  and prepared for ship-
ment.  The wastewater  generated  by this  process comes from the drain-
age on the moving belt and  from  the  slurry  which  is discarded.
                                  VTI-22

-------
 Since particle size of mica flakes is important in producing mica
 paper that is both flexible and durable, the manufacturing process
 rejects those particles too small and discharges them with
 process wastewater.  The above represent the only process
 wastewater specific to mica paper dielectric production.

 Wastewater Analysis Data

 Process wastewater and effluent discharges from dielectric materials
 manufacturing were sampled at three facilities.  Samples were analyzed
 for  parameters identified on the list of 129 toxic pollutants,
 non-toxic  metals,  and other pollutants presented in Table 7-6.

 Tables  7-7 through 7-12 present sampling analysis data for detected
 parameters in raw  process wastewaters and treated effluents for
 those plants  sampled within the dielectric materials subcategory.
 Pollutant  parameters are grouped according to toxic organics,
 toxic metals,  non-toxic metals,  and other pollutants.   Total
 pollutant  concentrations are presented as well as mass loadings
 of those pollutant parameters.   Mass loadings were derived by
 multiplying concentration by the flow rate and the hours per
 day  that a particular process is operated.   Some entries were
 left  blank for one of the following reasons:   the parameter was
 not detected?  the  concentration used for the  kg/day calculation is
 less  than  the  lower quantifiable limits  or not quantifiable.   The
 kg/day  is  not  included in totals for calcium,  magnesium, and
 sodium.  The  kg/day is not applicable to pH.   Totals do not include
 values  preceded by "less than".

 Only  a  limited  amount of stream analysis data  is available.   Toxic
 organics,  toxic metals and non-toxic  metals were detected at
 measurable levels  as  well  as  at  levels below  the limit of quanti-
 tative  measurement.   Other parameters are all  reported in measurable
quantities.  The following conventions were  followed in presenting
 the data:                                                         ^

          Trace Levels - Pollutants  detected  at levels too low to
          measure  are  reported  as  less than  (<)  the  minimum limit
          of measurement for  the  test method used.

          Pollutant Loads  - Pollutant loads are calculated for
          measureable  pollutants  by multiplying concentration
          by flow  and  daily flow  durations.  This procedure  gives
          calculated pollutant loads  in  kg/day  by pollutant  for
          each stream  sampled. ,
                                VI1-23

-------
                                              TABLE 7-6
                                   POLLUIANT PARAMETERS ANALYZED
TOXIC ORGANICS

 1.  Acenaphthene                               46.
 2.  Acrolein                                   47.
 3.  Acrylonitrile                              48.
 4.  Benzene                                    49.
 5.  Benzidine                                  50.
 6.  Carbon Tetrachloride(Tetrachloromethane)   51.
 7.  Chlorobenzene                              52.
 8.  1,2,4-Trichlorobenzene                     53.
 9.  Hexachlorbenzene                           54.
10.  1,2-Dichlorethane                          55.
11.  1,1,1-Tridiloroethene                      56.
12.  Hexachloroethane                           57.
13.  1,1-Dichloroethane                         58.
14.  1,1,2-Trichlroethane                       59.
15.  1,1,2,2-Tetrachloroethane                  60.
16.  Chloroethane                               61.
17.  Bis(Oiloranethyl}Ether                     62.
18.  Bis(2-Chloroethyl)Ether                    63.
19.  2-Chloroethyl Vinyl Ether(Mixed)           64.
20.  2-Chloronaphthalene                        65.
21.  2,4,6-Trichlorophenol                      66.
22.  Parachloroneta Cresol                      67.
23.  Chlorofonn(Trichloromethane)               68.
24.  2-Chlorophenol                             69.
25.  1,2-Dichlorobenzene                        70.
26.  1,3-Oichlorobenzene                        71.
27.  1,4-Dichlorobenzene                        72.
28.  3,3'-Dichlorobenzidine                     73.
29.  lA-Dichlocoethylene                       74.
30.  1,2-Trans-Dichloroethylene                 75.
31.  2.4-Dichlorophenol                         76.
32.  1,2-Dichloropropane                        77.
33.  l,2^icMorcpropylene(l,3-^ichloropropene) 78.
34.  2,4HDimethylphenol                         79.
35.  2,4-Dinitrotoluene                         80.
36.  2,6-Dinitrotoluene                         81.
37.  1,2-Diphenylhydrazine                      82.
38.  Ethylbenzene                               83.
39.  Fluoranthene                               84.
40.  4-ChlorophenylPhynyl Ether                 85.
41.  4-BroK^>henylPhenyl Ether                  86.
42.  Bis(2-Chloroisoprcpyl)Ether                87.
43.  Bis(2-Chloroethoxy)Methane                 88.
44.  Methylene Chloride(Dichloromethane)        89.
45.  Methyl Chloride (Chloromethane)             90.
Methylbromide (Bromomethane)
Bromoform (Tribromonethane)
Dichlorobromone thane
Trichlorofluoromethane
Dichlorcdifluoromethane
Chlorodibromome thane
Hexachlorobutadiene
Hexachlorocyclopentadiene
Isophorone
Naphthalene
Nitrobenzene
2, 4-Dinitrophenol
4, 6-Dinitro-o-cresol
N-Nitrosodimethylamine
N-^itrosodiphenylaraine
N-Nitrosodi-N-Propylamine
Pentachlorophenol
Phenol
Bis ( 2-Ethylhexyl ) Phthalate
Butyl Benzyl Phthalate
Di-N-Butyl Phthalate
Di-N-Octyl Phthalate
Diethyl Phthalate
Dimethyl Phthalate
1 , 2-Benzanthracene (Benzo (A) Anthracene )
Benzo ( A)Pyrene ( 3 , 4-Benzo-Pyrene )
3 , 4-Benzof luoranthene ( Benzo ( B ) Fluoranthene )
11 , 12-Benzof luoranthene ( Benzo ( K ) Fluoranthene )
Chrysene
Acenaphthylene
Anthracene
1 , 12-Benzoperylene ( Benzo ( (KI ) -Perylene )
Fluorene
Phenanthrene
1,2, 5, 6-Dibenzathracene(Dibenzo(A,H)Anthracene)
Indeno (1,2, 3-CC ) Pyrene ( 2 , 3-o-PhenylenePyrene )
Pyrene
Tetrachloroethylene
Toluene
Trichloroethylene
Vinyl Chloride (Chloroethylene)
Aldrin
Dieldrin
                                                      VII-24

-------
                                              TABLE 7-6  Con't
  91.  Chlordane(TechnicalMixtureandMetabolites) 112.
  92.  4,4'-DOT                                  113.
  93.  4,4I-DDE(P,P'-DDX)                        TOXIC
  94.  4,4'-DDD(P1FP'-TDE)                        114.
  95.  Alpha-Endosulfan                          115.
  96.  Beta-Endosulfan                           117.
  97.  Endosulfan Sulfate                        118.
  98.  Endrin                                    119.
  99.  Endrin Aldehyde                           120.
 100.  Heptachlor                                121.
 101.  HeptachlorEpoxide(BHC-Hexachlorocyclo-    122.
         hexane)                                  123.
 102.  Alpha-BHC                                  124.
 103.  Beta-BHC                                  125.
 104.  Gamma-BHC(LIndane)                        126.
 105.  Delta-BHC(PCB-Polychlorinated Biphenyls)  127.
 106.  PCB-1242(Arochlor 1242)                    128.
 107.  PCB-1254(Arochlor 1254)
 108.  PCB-1221(Arochlor 1221)
 109.  PCB-1332(Arochlor 1232)
 110.  PCB-1248(Arochlor 1248)
 111.  PCB-1260(Arochlor 1260)
 129.   2,3,7,8-Tetrachlorcdibenzo-P-Dioxin (TCDD)
PCB-1016(Arochlor 1016)
Toxaphene
METALS
Antimony
Arsenic
Beryllium
Cadmium
Chromium
Copper
Cyanide
Lead
Mercury
Nickel
Selenium
Silver
Thallium
Zinc
NON-TOXIC METALS

Calcium
Magnesium
Aluminum
Manganese
/Vanadium
Boron
Barium
Molybdenum
Tin
Yttrium
Gobalt
Iron
Titanium

OTHER POLLUTANTS

Oil & Grease
Total Organic Carbon
Biological Oxygen Demand
Total Suspended solids
Phenols
Fluoride
Xylenes
Alkyl Epoxides
                                                        VII-25

-------
                                                TABLE 7-7
                                   OIL FILLED TRANSFORMER PROCESS WATER
                                          (PLANT I.D. NO. 19563)   -
Strean I.D. No.


Flow Rate (Liters/Hr)
Duration (Hrs/Day)
Sample Number

     TOXIC ORGANICS

 11  1,1,1-Trichloroethane
 22  Parachloroaeta Cresol
 23  Chloroform (Trichloromethane)
 24  2-Chlorophenol
 39  Fluoranthene
 44  Methylene Chloride (Dichloromethane)
 55  Naphthalene
 65  Phenol
 66  Bis(2-ethylhexyl)Phthalate
 67  Butyl Benzyl Phthalate
 68  Di-N-Butyl Phthalate
 70  Diethyl Phthalate
 78  Anthracene/Phenanthrene
 80  Fluorene
 84  Pyrene
 86  Toluene
107  PCB-1254 (Atochlor 1254)
Total Toxic Organics

     TOXIC METALS

114  Antimony
115  Arsenic
117  Berylliuffl
118  Cadmium
119  ChroBiua
120  Copper
122  Lead
123  Mercury
124  Nickel
125  Seleniuo
126  Silver
127  Thallium
128  Zinc
Total Toxic Metals

     NON-TOXIC METALS

     Calcium*
     Aluminua
     Vanadium
     Barium
     Tin
     Cobalt
     Titanium
     Magnesium*
     Manganese
     Boron
     Molybdenum
     Yttrium
     Iron
     Sodium*
Total Non-Toxic Metals

     OTHER POLLUTANTS

     pH
121  Cyanide
     Oil & Grease
     Total Organic Carbon
     Biochemical Oxygen Demand
     Total Suspended Solids
     Phenols
     Fluoride

     I-(Interference Present)
tng/1
400
Skinner No. 1
Effluent
152977
24
3947
0.048
0.800
<0.010
0.660
0.01
<0.010
<0.010
<0.010
<0.010
<0.010
<0.010
0.014
1.532
<0.005
<0.005
<0.005
0.005
<0.01
0.01
<0.04
<0.001
<0.04
<0.004
<0.005
<0.025
0.169
0.274
6.330*
0.825
0.031
0.018
0.016
0.003
0.003
1.852*
0.039
0.035
0.008
0.002
0.242
8.795*
1.22
6.0
0
0
12
I
9
0.08
0.12
kg/day
400



24

0.176
2.931

2.418
0.037






0.051
5.613



0.0183

0.366






0.619
1.004
23.2
3.023
0.114
0.066
0.059
0.011
0.011
6.786
0.143
0.129
0.0293
0.007
0.887
32.23
4.743



43.971

32.978
0.293
0.439
as/I
401
Skimmer No.
Effluent
89894
24
3948
 0.062
<0.010
 0.570
<0.010
<0.010
 1.200
•
-------
                                                                 CO
                                                     oo    m so r*
                                                  *•* r~ in *3* en in     *-» eo
                                                  CM in vo p- m o     CM CM
                                                  CM O r" O O O     O vo
                                                  000000     00
                                                  o o o o o o
                                                                                 •—    01 O
                                                                                 -T    m CO
                                                                                 a    01 01
                                                                                 o    -• -»
                                                                                 o    o o
                                                                        o  o
>*    «« 0\
m    cd «-»
co   .    f*-

•°    |-

       .-4
       b    <
   CM VO
   m CM
   oo
   o o
                                                  in -»    eo *" *
                                                  in p* ** 1-1 o
                                                  o o o o o
                                                  o o o o o o
                                         !•«••«    in o m o
                                         oo    oc^f-^m
                                         oo "i
                                                                        o    o o
                                         o  o
                                                  ooooooooo
             oooooooo—

             ooooooooo
                                                     o
                                                     o
                                                  oo    o CM  i-* m    i—i    o    mm
                                                  ooovoeMoo-  -o 3 O

             in  3: >w M
             en  i  vw r-
             O  -rt ttj 1-1
                                                                 o
                                                                 00
                                                                 CM
                                                                              CO CO
                                                                              CM a\
                                                                              O> CO
                                                                              m NO
                                                                              CM CM
                                     r-    r* vo     CMinmooso    so
                                     osrorsioo'ioooovova

                                     o m o o  •-* o o o o o o CM en
                                                 **m    mocoo    m    p*     ocsi
                                                 OO:   ocM*oin    *^    o     cam
                                                 oooo~
                                                 m m
                                                 co co
                                                 o o

                                                 §§
                                                                                                        I
                                                 CMcM*mo
                                                 o. o     ocM
                                                 oo4oo
                                                   •   •SS'*   •
                                                 00     OOOO
                                                           V  V    V
                                                                                                         o    m     **     oco
                                                                                                         m    *•*     o     m1*"*
                                                                                                         o<:o*
             a
             V
            •o
                      u •*,
                      t>  u
                      ••"  u    n
                      J  3    u
                      o  u     x
                     •-"3     O
                     ha     6-
 Vri  U 4J
 o  o  oi
r-» —<  O
.s jr  u
 U  (J  O
• H *M VH
 U  U JS
£-6-0
 I   t .

— CM 4J
                      cu n


                      >>-G  a
                      X  4J f-4
                      D  J=  n
                     JS  O.JS
                                                                       ><-H

                                                                       .fi B
                                               >.—<  ^    U M
                                            u .c  >. a.    ob
                                            E *J  **        KO
                                            U  0)  3  i-l V O
                                           "<  I  A  >. B i-l O
                                            2 CM  I  A 01 JS -H

                                           "a «  i  .41 i-« -H o
                                                                                       X    3     B
                                                                                       E  >
                                                                       b (—4 «

                                                                       3U
                                                   • s z co  o  a  t- H
                                                                                                                       i -e •-<
                                                                                                                       i t- N
  i i-« m eft o '
  i — « CM m •
                                           >!    
-------
                                        §
                                        0
           en   -+
           in   «i CTV
           in   1*4 r*
           en   id en
           o     r-
1     &   S
                                                                                        «M   CM en
                                                                                        o   CM in
                                                                                        en   i-» tn
                                                       vO •»
                                                       O v*
                                                       a a

                                                       d o
                                                         o* *™   in o cn Q   n   r*«   \Q \c
                                                         oo   o c«« ••* m   »-•   o   CM en
                                                         OOgOOOO- — O CTi
           in [vi 3 r-
           en   i-« cs
           o c w r»
              o w M
         -<|  J3 W
     u
     c
     *J
  «i CTV
                               i— in  eo n-   co
                               O O  \O en   -T
                               a o  -• o   o
                               oa  a o   o
                                              CM CM
                                              o en
                                              o o
                               o o   o o
                      o o
                      O C9

                      o o
               I O

              o'  o -f
                                                          >o
                                                                   NO
                                                                   \o t
                                                                                   en   —
                                                                          >J= fa
                    X4J^»l^
                    u«xa
                    j: a. Q.JS
                    i-i     u
                    >ti-* -HA
                   i j- >, >,a,
                                                       on
                                             £ B
                                             *J ra
                                             aj eo
                                             oh
                                             U O
                                       u>-iaio
                                       o >< c ••< o
                            cr---j.A5-£'.rff«s^g   5   .1
                                                                            !„.
                                                                            V > i
                                                        ,2
                                                                                             -u

                                                                                            < °
                                                          VII-28

-------
                                      o o

                                      o d
                                                 vO
                                                 s
                                   o o

                                   d d
                                                                            oo   en i
                                                                            >e   >o-
                                                                            »•<   m N

                                                                            s   s;
                         o e    «
                         op    o

                         o o    o
                                      CM 00
                                      •-• o
                                                 ••CM    mono     in o
   o in o CM   ooo
                      ooooo   ooo
                                                 o

                                                 d
                                                      r>-«» oo
                                                      •- eo i—
                                                      o r~ r»
                         v§ O ~> O
                       NOOOinoO   CM L  —
                       > o o> o •*   ooo
                      ooooo
                                                 CMCM    moooo    m    «   o m



                                                 dd    dddd    d    d   dd
                                                         v v    v    v
      §
      3   -*
      i-4   CM
                         in    o N
    oa
                                oo
                                vo    in
                                *~tr aa
                                o 03 o
vo CM
m f«
ss
o o
                                         \O   <•> I—

                                         3   53
                                         O   00 <*>
                                         o   m  «*
-J
In
« O
CB -M
*»

U

u
s
fr"
U 4J
g 3
S « 3L 2
V C 41 JS «J 41 41
N a S <•> JS -u -U
a 4, JS 4, 4, oi a. a a
ti e « b *H »« .J3 JS
O4IO4IJS — i 41 JS JS
— io— ou4ijsjsa.a
JS b JS W-*4 O U — •<
O O U O "O OJ >»•»• -H
*^4f^>*4^4 u tj 4IJ3 >»>1
vusbjs e e c tJ Ij J
C->ue-uac>4i4i3u
-- -i ui ja -i i m o
«3-Q — Qt-— >%ITMI 1
e,---"-A^3'ST f
§o — a>o<»-ivooooN
-n^«cM«ncn^\a•
,J3 JS
4J JJ
j: u
iBa O
•S. 4,1.3
J3 3 41 JS
*> 41 3 O
•M x'o *b
O -J vo r—
f*» 09 OO OO
U
•«4
e
n
ca
u
O
u
•H
X
£
*•<
«
«j
£


2
i l!
«e <
-» m



ll
^c3
r» oo



!u
§ iU
t> U -J



» §
b f-4 *i^ b
34, CS 4,
u *" M i>
S Z CO U
CM CM CM CM



|
ts e
5S


ft
«
44
£
u
•P4
X
£
3
&
                                                                                                                          I
                                                               VII-29

-------
ss Lo

g/day
                                                                        -a- 10
                                                                        vo OV
                                                                        0 O •-
                                                                        O O CM
on
ncentra
Bg/1
                                           Scv,
                                                                        o o
                                                                        CM cn o
                                                                        o o oo
»3  n
   •e
 «a •».
 M  M

£•-
cvi r-

§CM-
                                                                                    -a-
                                                                                    vo O
                                                                                    o r-.
                                                                                    o m
                                                                           vO
                                                                           cn oo
                                                                           VO CM
                                                                           0 ov
                                                                                          o    oa cn    vo
                                                                                                §O fH    «-•
                                                                                                o o    o
                                                                                                                     ov r*
                                                                                                                     P* ^
                                                                                                                     o —
                                                      oo ov ov oo cn
                                                      o <• r* CM o
                                                      ov r- •" ov o
                                                ss
I
       B

       8"
       00 SS

CO  I  3 O OV
o CM       r—
                                                                  tn    CM
                                                                  «    o
                                                                              OV

                                                                              cn
                                                                  CM O

                                                                  d vo'
 OOOOOOOOOOOOCM'
                                                                                                                                            3    .
                                                                                                                                            o o tn
                                                                                                                                                   2
                                                                                                                                                in o m
                                                                                                                                                                        o vo o o  in o  r~
                                                                                                                                                                        v     m f*  i-*
                           •o

                            §>,
CM vo       vo
09  I       CM
   §CM  4J    VO
   CM  B    CO *3"
CO X  «    —CM
§
                                                                        oo cn CM    vo tn
                                                                        p-* o ev    in tn
                                                                        o o cn    mo
                                                                r tn ov
                                                                  Svo ov
                                                                  o vo
         o cn o oo    vo

         OOOO    O

         d d o' d    o*
                                                                                                                       o
                                                                                                                       O
                                                                                                                                               CM    -»    ov
                                                                                                                                               co m CM en co
                                                                                                                                               vo cn o\ CM o

                                                                                                                                               CM vo cn in o
       oo :
CM vo  ra

gcM^'

8S
                                                               o
                                                               CM
                                                               O
                                             tn o o    o
                                             tn ~ O    CO CM
                                             O O CM    <• CM
                                                               in
                                                               •-< o  CM
                                                               O CM  O
cMinineM>-«oin'-'OOO'-«oco
oooo^encMOini-icMocnov
oooooooooooomvo
                                                                                                                                                                        O OO  O  CM VO O VO
                                                                                                                                                                        v     in  •- —
CM CM  01

"IAS
§

                                                                  o
                                                            CM <-* r— O
                                                            O O f* •••«
                                                            OOOO
                                                            OOOO
                                                            o o o o

                                                            d d d d
                                                                                                                     o
                                                                                                                     o
                                                                                                                     o
                                                                                                        CM CM
                                                                                                  vo    f* o
                                                                                                  o    o «
                                                                                                  o    o o
                                                                                                                                                         o  o

                                                                                                                                                         d  d
                                                   oo
                                                   o             «
                                                   o vo » CM
                                                                    CM r1 •-< OV
                                                                    OOOO

                                                                    d d d d
                                                                                                      CM
                                                                                                      O 09
                                                                                                      O O
                                                                                                      O O
                                                                                 o'dddddi-iddddoo'cM
                                                                                                                                          V  V  V  V  V
                                                                                 o
                                                                                 0
                                                                                            CM
                                                                                         r- ov
                                                                                         cn o
                                                                                         o o    CM
                                                                                         O O CM O
                                                                                         OOOO
                                                                                            §000
                                                                                            o o o
                                                                                         OOOO
                                                                                         OOOO

                                                                                         do    d
                                    in
                                    o <->
                                    O CM
                                    O O
                                    o o
                                    o o
                                    o o

                                   _ d d
                                                                                                      CM VO
                                                                                                      O 09
                                                                                         cMtntnoo       »-*mino*^inin
                                                                                         OOO*Ti-iO!*»OeMO'-*OinO
                                                                                         ooooor*»»-«oooooincM
                                                               •8 8
                                       OB,    js u    cn
                                       z -S    * §    a
                                                                     o

                                                                     •s|
                                                                     "S o
                                                   >,


                                                   0)


                                                   o


                                                   U  01
                                                                                       01

                                                                                       n



                                                                                       1.
                                                                                                                                            o o o vo -a- o oo
                                                                                                                                               m vo CM o
                                                                                                                                               CM -H « CM
                                                                                                                                            O             CM
                                                                                                                                            O             O
                                                                                                                                            O       00    O
                                                                                                                                            o    in in *-• o
                                                                                                                                            o in r- CM o\ o
                                                                                                                                            o <-H o o o o
                                                                                                                                            o r- o o o o

                                                                                                                                            d o d d o d
                                                                                                                                                                       O O O O O O vO
                                                                                                                                                                          o <• i— o
                                                                                                                                                                          O « 00 OV
                                                                                                                                                                            "00 CM Ov
                                                                                                                                                                          o
                                                                                                                                                                          00
                                                            01    01


                                                     	eg    0>  w
                                                      4J 4J P-*    p-4  U
                                                                                                                                                                             £
                                                                        O O -O 11
                                                                        i-lr-4 U N
                                    O -«
             01       U
            j-> c    o:
-  «  •     w w
                                                  ss EU a. js    x  B
                                                  1-1       u    4J  a
                                                   >v>* t-i je     oi  oo
                                                  JS  >V S>«OL1     O  1-
                                                  ^ jj ^j        h O

                                                   i  cn o  >. C —  u
                                                  CM  I  I  JS  «J JS -H
                                                  ^—'  c  a *j  s  u  x
                                                   Ml  I   U f< -M  O
                                                  •H * »4  O  U &H
                                                  CO O Q C2 H 6-
                                                                    o vo r** -tJ
                                                                    f** OO CO O
                                                                             E-
TA
                                                                          I
>.    !    B
B U -i-l E 3
   §-H -H 3 -M U
   B l-t 'H S 01
•rt 01 >> S O Q.-U
*J W W "O IJ O. flj
B k* 01 W X O 01
                                                                                                              >»    3
                                                                                                              b fH -rt
                                                                                                              3 OJ C
                                                                                                              u -tf  *-4 u x
                                                                                                                       f-traco
                                                                                                                       —4JS»*o
                                                                                                                                               o>     X 01
                                                                                                                                               M  U  O tS
                                                                                                                                               a  -H     B
                                                                                                                                               01  B  .-< 01
                                                                                                                                               14  n  m a.
                                                                                                                                               O  oo o w
                                                                                                                                                  U  *rt 3
                                                                                                                                            oi  "O  O  S w  to
                                                                                                                                           •o  a     S   -H

                                                                                                                                            B  "o  -5 «  i
                                                                                                                                            RJ  i«4  4J  O 4J  Of
                                                                                                                                            >. • H  o  -H o .a ;
                                                                                                                                           CJ  O  H  03 H a*
                                                                                                                                                            §
                                                                                                                                                           UJ
                                                                                                                                                            Ij


                                                                                                                                                           I
                                                                                                        VII-3U

-------
1
L

day
on Ma

k
30082

M22-7

Effluent
                                     00
  §s
  g"
 u
     M
CM f» a
00 I h4
O CM

8S!
                                       S(N   00
                                       O   P-

                                     do   d
                                                                g
P
             a
       §<
                                                   in in
                                                   f"» CM
                                                   0 0
                                                           o

                                                            •
                                                           o
                                                                                      o — oooo
                                                                                                   i-i'^o^'
                                                                                                   oooo
                                                                                                                     o r» *-   oo o en

                                                                                                                     d m cv! •* — d vo
 !J?
                                                    vfl


                                                    d
                                                                            o

                                                                            d
                                                                                        •* r
                                                                                        o
                                       VO — -» O
                                     00 CO O> VO VO
                                     a\ *f \& oo  o
        CM 00 f<
        SAii
        SS^
                             _ in o     •« o
                             335     5S
                                                                                          ooooo
                                                                                                                     S
                                                                                                                     O cs ui r-~ o o oo
 ^1   ,.
 M —-   00 I
. a  oo   o CM fa
 n •*   o CM 41
 X      en E w
                   R
                   ••• *?
                   en CM
                             m
*» 1-4
               B


            •rt 3 CM
        CM 00 -M     4

        Si*     a
        O CM 3     ^« •*
        en JS S     en CM
                             O in

                             en o

                             d d
                                                                                                                            •o
                                                                                                                             u
                                                                                                                             N
                                                                                                                             >v
        ! S >
                                                    41

                                                    a



                                                    U 41
                                                    d *> •
                                                   I CU 0)
                                                •gfe.3.2.,

                                                •2-3. .2-S3
                                                 O X w *J —I

                                               .2^fSJ
                                                        S«

                                                       5^


                                  o-nSu>5.~-,S   II
                                     - - 4i js >. asoi    o fa
                                         s *j *»  4l3U>rt«IO
                                -...	^NIAO>«B^HU
                               •O -53 JJ -• X CM I  IJ341J3-M
                                i  i i  >> JT v^eewaoK   t^
                               -• — CM J! *J W I  I  «J f-> — O   ^
                                »  •  *«J 4l^il**4»4»vavovei^ceoe o
ich

icb

r
ME
                                                                              *'-*
                                                                              e — < .= a
                                                                              U >, 3 O
                                                                                   <
                                                                                               ^*tHfa**4   u
                                                                                                                o
                                                                                                                £
                                                                                                 ^ in va r* oo *>    x
                                                                                                 PCMcScMCM O    S
                                                                                                 '----f-    S
                                                                                                                            I
                                                                                                                          e a -H
                                                                                                                          O   • i«4
                                                                                                                          A e o
                                                                                                                         4)    x aj
                                                                                                                         ca o O is

                                                                                                                         4» S i— i «
                                                                                                                         w a  n &
                                                                                                                        0 00 W to
                                                                                                                           U .^4 3

                                                                                                                      4) <9 O  P CO CQ
                                                                                                                      •DC    0;   ^
                                                                                                                      •iH  (8 i-H J5 ^N O
                                                                                                                      e    (9  u to e
                                                                                                                      « »-H *i  O 4J 0)
                                                                                                                      >»*M o -H O X
                                                                                                                      00 Ei m H £

-------
                                          TABLE 7-12
                      MICA PAPER MANUFACTURING RAW AND TREATED WASTEWATER
                                       PLANT ID #43055
Streaa Identification

Flow Rate, Liters/Hr.
Duration, Hrs/Day

     TOXIC ORGANICS

 04  Benzene
 07  Chlorobenzene
 11  1,1,1-trichloroethane
 23  Chloroform
 38  Ethylbenzene
 44  -Methylene Chloride
 66  Bis(2-ethylhexyl)Phthalate
 67  Butyl Benzyl Phthalate
 68  Di-n-butyl phthalate
 85  Tetrachloroethylene
 86  Toluene
 87  Trichloroethylene
Total Toxic Organics

     TOXIC METALS

114  Antimony
115  Arsenic
117  Beryllium
118  Cadmium
119  Chromium
120  Copper
122  Lead
123  Mercury
124  Nickel
125  Selenium
126  Silver
127. Thallium
128  Zinc
Total Toxic Metals

     NON-TOXIC METALS

     Aluminum
     Barium
     Boron
     Calcium*
     Cobalt
     Iron
     Magnesium*
     Manganese
     Molybdenum
     Sodium*
     Tin
     Titanium
     Vanadium
     Yttrium
Total Non-Toxic Metals

     OTHER POLLUTANTS

     PH
     Temperature, C
121  Cyanide, Total
     Oil & Grease
     Total Organic Carbon
     Biochemical Oxygen DeraanJ
     Total Suspended Solids
     Phenols
mjs/1
   03653
Raw Waste
   146037
24
<0.010
<0.010
 0.180
<0.010
<0.01
 0.029
<0.010
<0.010
<0.010
<0.010
<0.010
<0.010
 0.209
<0.005
<0.003
<0.001
 0.001
 0.004
 0.011
 0.013
<0.001
 0.023
<0.003
<0.003
<0.025
 0.017
 0.055
 0.260
 0.013
 0.052
 9.693*
<0.001
 0.107
 3.270*
 0.004
 0.002
 1.613*
 0.027
 0.002
 0.028
<0.001
 0.495
kg/day



24





 .63088


 .10164
mg/1           kg/
    03654
Treated Waste
    146037
24             24
 .73252
 0.0035
 0.014
 0.038
 0.046

 0.081
 0.060
 0.192
 0.911
 0.046
 0.182
 0.368

 0.014
 0.007

 0.095
 0.007
 0.098

 1.728
7.0
13
0
0.4
1.9
2.0
103
0.008



1.402
6.659
7.0
361.0
0.028
         NOT

       ANALYZED
<0.005
<0.003
<0.001
 0.001
 0.004
 0.010
 0.016
<0.001
 0.039
<0.003
<0.003
<0.025
 0.016
 0.086
 0.110
 0.009
 0.044
 9.639*
<0.001
 0.039
 3.257*
 0.002
 0.001
 1.521*
 0.034
 0.001
 0.024
 0.003
 0.2653
                               6.9
                              13
                                0
                               1.0
                               1.7
                               1.2
                               7.2
                               0.006
0.0035
0.014
0.035
0.056
                               0.137
0.056
0.302
0.386
0.032
0.154
0.137

0.007
0.0035

0.119
0.0035
0.084
0.011
0.937
                               3.505
                               5.958
                               4.206
                              25.235
                               0.021
                          *Not Included in Totals
                                                            VII-32

-------
          Sample Blanks - Blank samples  of organic-free  distilled
          water were placed adjacent  to  sampling  points  to  detect
          airborne contamination of water samples.    These  sample
          blank data are not subtracted  from  the  analysis results,
          but, rather, are shown as a (B) next  to the pollutant
          found in both the sample and the blank.  The tables  show
          figures for total toxic organics, total toxic  and
          non-toxic metals, and other pollutants.

Oil Filled Transformers - Four oil filled transformer plants were
visited, one of which was sampled.  Table 7-7 presents the  analyses
of the effluent streams from oil/water separators.   Raw  wastewater
samples were not collected at this facility.

Oil Filled Capacitors - Tables 7-8 through 7-11 present  data from a
plant manufacturing oil filled capacitors and utilizing  water  to clean
the outside of the capacitors subsequent to filling  with dielectric
fluid.  The plant was sampled on two  separate occasions. On one
occasion, four sample points were taken  - the wastewater lagoon ef-
fluent (total plant composite raw process waste),  the multimedia
filter effluent, the carbon filter effluent and the  final waste
treatment effluent (following the second carbon filter and  diato-
maceous earth filter).  Tables 7-8 through 7-10 trace the progres-
sion of concentration changes through the waste treatment system
components for three days of operation and sampling.

Table 7-11 presents data from the same plant  sampled at  an  earlier
date and includes additional sample points (supply water, deter-
gent wash of filled capacitors, and rinse following  detergent  wash).
This table also traces the progression of concentration  changes
through the waste treatment system components.  The  data are
given for two days of operation.

Mica Paper Dielectric - Table 7-12 presents data  from a  plant  pro-
ducing mica paper.  The data were taken  before  and after two settling
ponds in series used to settle out mica  flakes  in the plant effluent.
The samples were collected over a 24  hour period.

Summary of Raw Wastewater Stream Data

Table 7-13 summarizes pollutant concentration data for the  process
wastewater streams sampled in the dielectric  materials subcategory.
Minimum, maximum, mean, and flow-weighted mean  concentrations
have been determined for the raw waste streams  sampled.  The flow
weighted mean concentration was calculated by dividing the  total mass
rates (mg/day) by the total flow (liters/day) for all appropriate
sampled data for each parameter.  Trace  level concentrations were
not used in these calculations.  Table 7-13 also  summarized mean
pollutant concentration data for mica paper dielectric manufactur-
ing.  Only one stream at Plant ID 43055  was sampled.

Pollutant parameters listed in Table  7-13 were  selected  based  upon
their occurrence and concentration in the sampled streams.  Those
parameters not detected in the sampled streams  were  excluded from
this table.  The information presented in Table 7-13 is  based  on
                              VII-33

-------
                                            TABLE 7-13
                                 DIELECTRIC MATERIALS SUBCATEGORY
                         SUMMARY OF  DIELECTRIC  RAW WASTE  STREAM DATA*
                                (EXCLUDES MICA PAPER MANUFACTURING)

                                  Minimum        Maximum        Mean           Flow  Weighted
                                  Concentration  Concentration  Concentration   Mean  Concentration
                                  (mg/1)         (mg/1)          (mg/1)         (mg/1)
TOXIC ORGANICS
  6  Carbon tetrachloride
  8   1,2,3-trichlorobenzene
 11  1,1,1-trichloroethane
 29  1,1 dichloroethylene
 30  1,2 trans-dichloroethylene
 44  Methylene chloride
 66  Bis(2-ethylhexyl)phthalate
 68  Di-n-butyl phthalate
 70  Diethyl phthalate
 86  Toluene
 87  Trichlorothylene
107  PCB-1254

TOXIC METALS

118  Cadmium
119  Chromium
120  Copper
122  Lead
124  Nickel
126  Silver
128  Zinc

OTHER POLLUTANTS

121  Cyanide
     Oil & Grease
     Total Organic Carbon
     Total Suspended Solids
     Biological Oxygen Demand
     Phenols
 0
0.02
0.045
0.02
0.01
1.2
  2
0.06
3.22
0.02
0.01
0.017
ND**
 0.0023
<0.01
 0.03
 0.025
<0.025
<0.01
 0.415
0.54
0.2,
0.28
0.03
3.8
0.48
0.06
3.22
0.02
0.015
0.20
ND
               0.585
               0.041
               1.7
               1.45
               0.05
               0.02
               0.555
0.28
0.123
0.12
0.02
2.5
0.34
0.06
3.22
0.02
0.013
0.109
ND
               0.21
               0.02
               0.617
               0.548
               0.033
               0.013
               0.5
<0.004
8.2
50.
16.
12.
0.12
0.079
780,000.
8140.
9900.
2810.
0.18
0.041
156053.
2747 .
3373.
983.
0.14
2.
0.
0.
0.273
0.049
0.037
0.02
 .45
 .339
 .06
3.22
0.02
0.015
0.193
ND
               0.03
               0.025
               0.854
               0.119
               0.037
               0.015
               0.261
                                             0.041
                                            17.05
                                            53.36
                                               70
                                               5
                                           21
                                           15
                                                                               0.12
     *Non-Toxic Metals Were Not  Analyzed
     **Not Detected
                                               VII-34

-------
                      TABLE 7-13 CON'T
                  MICA PAPER MANUFACTURING
                SUMMARY OF RAW WASTE DATA
 11  lr1/1 Trichloroethane
 44  Methylene Chloride
118  Cadmium
119  Chromium
120  Copper
122  Lead
124  Nickel
128  Zinc
     Aluminum
     Barium
     Boron
     Iron
     Manganese
     Molybdenum
     Tin
     Titanium
     Vanadium
     Total Organic Carbon
     Total Suspended Solids
     Phenols
     Oil & Grease
Mean  Concentration*

     0.18
     0.029
     0.001
     0.004
     0.011
     0.013
     0.023
     0.017
     0.26
     0.013
     0.052
     0.107
     0.004
     0.002
     0.027
     0.002
     0.028
     1.9
     103
     0.008
     0.4
Flow (liters/day)                  3,504,888

*Only one sample stream, Plant ID 43055  (See Table 7-12)
                                 VII-35

-------
 data in Tables 7-11 (detergent wash stream, detergent wash rinse
 stream, and lagoon influent).  For mica paper manufacturing, Table
 7-12 (raw waste stream) was used.  The concentration data in Table
 7-13 must be used with care, because the detergent wash stream has
 an extremely low average flow rate (it is a batch dump) and the raw
 waste stream has an extremely high flow rate.  Thus, many of the
 maximum concentrations are associated with a very low flow rate, and
 many of the mean concentrations are strongly influenced by this
 same stream.  The flow-weighted mean concentrations are essentially
 equal to the concentrations of the high flow rate (raw waste) stream.

 Treatment In Place

 The following subsections describe treatment in place for wastewater
 from oil filled transformers, oil filled capacitors, and mica paper
 dielectric production.

 PCS Dielectric Fluids  - Plants which used PCS as a dielectric fluid
 are faced with the problem of decontaminating equipment used for im-
 pregnating or filling  the final product.  In some cases, this neces-
 sitates the removal of equipment and piping systems.  As a minimum,
 PCS storage containers, piping, and other equipment has to be drained
 of fluid and flushed with an organic solvent until all but trace
 amounts of PCB are removed.

 PCB's and solvent used for flushing such equipment is the liability
 of the company performing the operation and has to be disposed of
 or stored in an approved manner.  Residual amounts of PCB are not
 readily degraded in the environment.

 The decontamination of plant land area has also been necessary in
 some cases owing to accidental oil spills.  A successful system was
 sampled for removing oils from a land area bordering on a river.
 It is shown schematically in Figure 7-4.  The observed system
 operates in a manner similar to a leaching field working in
 reverse.  Water and oil are collected from an oil contaminant land
 area through pipes buried under the surface.  The oil-water mixture
 goes to a well and is  pumped to an oil-water separator.  The oil is
 analyzed for the concentration level of PCB.  If the concentration
 is over 50 mg/1 but less than 500 mg/1 the oil is stored as a PCB
 contaminated waste oil.  If the concentration exceeds 500 mg/1,  the
 oil  is stored as PCB waste fluid.  If the concentration is less  than
 50 mg/1,  the oil is treated as an ordinary waste oil and is disposed
 of accordingly.
   4
 At present,  there are  no EPA approved incinerators which can be  used
 for PCB disposal.   Two companies, Rollins Environmental Services of
Wilmington,  Delaware and ENSCO of Eldorado,  Arkansas have applied
                                 VII-36

-------
                           I
                           r-

                           w
                                  a
                                  is
                                  a
                                  a
E-i

§
CJ

s
o
VII-37

-------
 for  approval.   Rollins has two incinerators which are currently
 under consideration.   One, in Houston,  Texas is presently being
 tested.   The  second plant in Bridgeport,  N.J.  is still involved in
 a  local  legal  conflict preceding the planned "test burn".  Rollins
 estimates that the cost of disposing of PCB will be Ilff to 14jz? per
 kilogram.   The ENSCO  plant in Arkansas  has been put through a test
 burn.  A decision on  approval has not yet been made.

 Oil  Filled  Transformers - Manufacturers within the oil filled trans-
 former industry that  discharge wastewater typically treat their waste
 with one or more of the following operations:

                    Filtration
                    Solids settling in  tank or pond
                    Oil separation
                    Skimming and hauling  or storage of oil

 Figure 7-5  depicts the treatment system observed at Plant ID 19563,
 the  oil  filled transformer plant that was sampled.  This system
 consisted of an oil skimming device only.

 Oil  Filled  Capacitors - Plant 30082 is  one of  the largest oil filled
 capacitor manufacturers in the U.S.  The  pliant uses very few water
 producing operations,  but the discharge from the capacitor manufac-
 ture is  substantial (approximately 187,200 liters per day).  The
 waste  treatment system at this facility,  shown schematically in
 Figure 7-6, was designed to handle oil  and grease, total and dis-
 solved solids  and metals,  and sanitary  and run-off wastes.  The
 settling  lagoon is continuously skimmed and the skimmed oil is
 drummed  and contractor removed for disposal.

 The  discharge  from the lagoon is sent to  two mixed media filters
 connected in parallel.   After filtration  these flows combine and pass
 through  carbon absorption and a diatomaceous earth filter.  Each
 of the multimedia filters in the waste  treatment system is back-
washed on a regular basis.   After sludge  thickening, the decant water
 is put back into the  lagoon.   The final treatment system discharge
 rate  is  between 20-27 1pm (80-100 gpm).  For such a large throughput,
only one or two 55 gallon drums of solids are  removed each year.

Mica Paper Dielectric - Plant 43055 is  a  large mica paper dielectric
manufacturing  facility using  nearly 3.785 million liters per day (one
million  gallons  per day)  of process water.  The raw wastewater dis-
charged  from the manufacturing process  has high amounts of suspended
mica which are inert  mineral  particles.  This  facility utilizes three
settling lagoons or ponds  to  allow the  heavy mica particles to settle
out  of suspension.  The retention time  in each of the ponds is approxi-
mately 8-1/2 hours.   During normal operation,  only two of the ponds
are  used  in series  while the  third is allowed  to dry.  After drying
the pond  is dredged,  and the  sludge is  contractor hauled.  The waste
 treatment system for  this  plant is depicted in Figure 7-7.  The
effluent analysis  data for this facility  are presented in Table 7-12.
                                 VII-38

-------
          OIL SKIMMING
                              RAW WASTE  DISCHARGE
                I
                OIL DRUMMED
               (IF  PCB LEVEL IS >5*0 PPM,
                        'OTHERWISE INCINERATED)
           FIGURE  7-5

DIELECTRIC MATERIALS SUBCATEGORY
      OIL-WATER SEPARATOR
         PLANT ID 19563
 RECOMMENDED LEVEL 1 TREATMENT
                VII-39

-------
        Waste  Water
            i
          Lagoon
     (Oil Separation
         And  Skimming)
Multimedia
  Filter
Multimedia
  Filter
                       {  Backwash
                      . I i n ».i—. \m
Backwash
Holding
  Tank
                                                     Decant
        Activated
          Carbon
        Adsorber
                           Sludge
                          Settling
                            Tank
                              I
                                       Sludge (Haul)
        Activated
          Carbon
        Adsorber
                                     Arrows Indicate
                                     Wastewater Discharge
       Oiatomaceous
       Earth Filter
                   Discharge To River
                       FIGURE 7-6
            DIELECTRIC MATERIALS SUBCATEGORY
              WASTEWATER TREATMENT SYSTEM
                     PLANT ID 30082
             RECOMMENDED LEVEL 2 TREATMENT
                          VII-40

-------
   SETTLING
      POND
    SETTLING
      POND
                      SETTLING
                        POND
 DISCHARGE
'TO STREAM
            * Raw Waste To Alternating  Ponds
            FIGURE 7-7

 DIELECTRIC MATERIALS SUBCATEGORY
MICA PAPER DIELECTRIC MANUFACTURE
   WASTEWATER TREATMENT SYSTEM
          PLANT ID 43055
   RECOMMENDED LEVEL 1 ^TREATMENT
                 VII-41

-------
POTENTIAL SELECTED  POLLUTANT  PARAMETERS

Selected pollutants in  the.dielectric  materials  subcategory (exclud-
ing Mica Paper  Manufacture) are:

             6 Carbon tetrachloride
            30 1,2 Trans-dichloroethylene
            44 Methylene Chloride
            68 Di-n-butyl phthalate
            87 Trichloroethylene
          107 PCB - 1254*
          120 Copper
          122 Lead
          128 Zinc
              Total Suspended Solids
              Oil and Grease
              Total Organic Carbon

These parameters were selected based upon  their  occurrence  in  the
process wastewater  and  upon the treatability  of  each  at  the levels
found.  It  should be noted that data on non-toxic  metals was un-
available.

Table 7-14  lists pollutants other than the potential  pollutant
parameters  listed above that  were analyzed in the  raw waste streams
sampled for the dielectric materials subcategory.   Each  pollutant is
listed in the appropriate grouping  as  being not  detected, detected
at trace levels, or detected  at levels too low to  be  effectively
treated prior to discharge.

The selected pollutant  in the mica  paper manufacturing industry is:

       Total Suspended  Solids

Table 7-15  lists pollutants other than the potential  pollu-
tant parameter  listed above that was analyzed in the  raw waste
streams sampled for the mica  paper  manufacturing industry.   Each
pollutant is listed in  the appropriate grouping  as being hot
detected, detected  at trace levels, or detected  at levels too
low to be effectively treated prior to discharge.

APPLICABLE  TREATMENT TECHNOLOGIES

The treatment systems selected for  the dielectric  materials
subcategory are those defined earlier  in this section in Figures
7-5, 7-6, and 7-7.   The systems are designated as  Level  1 or Level
2.  The Level 1 system  shown  in Figure 7-5 consists of oil  skim-
ming and applies to wet transformers and oil-filled capacitor
manufacture.  The Level 2 system shown in Figure 7-6  applies to
the same industry segments but provides improved performance.  It
consists of oil skimming, multimedia filtration, carbon  adsorption,
and diatomaceous earth  filtration.  The Level 1  system shown in
Figure 7-7  applies  to the mica paper dielectric  segment.  It con-
sists of two stages  of  sedimentation.
*PCB-1254, See Appendix A
                                VII-42

-------
The following subsections will present performance  and  cost  data
for these treatment technologies for  the dielectric subcategory.
Treatment systems for oil filled capacitors, oil  filled transformers^
and mica paper dielectric wastewater  are discussed  in these  subsections,

For oil filled capacitors, it is possible  to eliminate  the need  for
process water use by substituting solvent  cleaning  for  detergent
washes and rinses.  A moderately large plant  (Plant, I.D.  No.  19103)
manufacturing capacitors employs solvent cleaning of finished capa-
citors.  The solvent is distilled and reused.  The  still  bottoms  are
contractor hauled and incinerated.

Although the use of solvents in cleaning oil  filled capacitors will
diminish or replace the need for process water,  the solvents used
must be collected and disposed of properly.  Discharge  of solvents
to the environment would be more harmful than  discharge of detergent
washes and rinses.

Substituting other dielectric fluids  for PCB  is  required  by  law.
There are several fire resistant fluids which  are proposed as sub-
stitutes for PCB.  Table 7-2 presented a summary of PCB substitute
dielectric fluids currently used or proposed  for use in oil  filled
capacitors and oil filled transformers.  Di-n-octyl phthalate is
widely used in fluid filled capacitors although  it  is a priority
pollutant.  Silicone oils are probably the most  popular PCB  substi-
tute for dielectric fluids.
                                  VII-43

-------
                                              TABLE 7-14
                                   DIELECTRIC MATERIALS SUBCATEQORY
                                   (EXCLUDES MICA EAPER MANUFACTURING)
                                        POLLUTANT PARAMETERS

                                  NOT DETECTED IN RAW WASTE STREAMS
TOXIC ORGRNICS

 1.  Acenaphthene                               46.
 2.  Acrolein                           •        47.
 3.  Acrylonitrile                              48.
 4.  Benzene                                    49.
 5.  Benzidine                                  50.
 7.  Chlorobenzene                              51.
 8.  1,2,4-Trichlorobenzene                     52.
 9.  Hexachlorbenzene                           53.
10.  1,2-Dichlorethane                          54.
11.  1,1/1-Trichloroethene                      55.
12.  Hexachloroethane                           56.
13.  1,1-Dichloroethane                         57.
14.  1,1,2-tfrichloroethane                      58.
15.  1,1,2,2-Tetrachloroethane                  59.
16.  Chloroethane                               60.
17.  Bis(Oiloromethyl)Ether                     61.
18.  Bis(2-chloroethyl)Ether                    62.
19.  2-Chloroethyl Vinyl Ether(Mixed)           63.
20.  2-Chloronaphthalene                        64.
21.  2,4,6-Trichlorophenol                      65.
22.  Parachlorometa Cresol                      67.
23.  Chloroform(Trichlorcmethane)               68.
24.  2-chlorophenol                             69.
25.  1,2-Dichlorobenzene        .                70.
26.  1,3-Dichlorobenzene                        71.
27.  1,4-Dichlorobenzene                        72.
28.  3/3-Dichlorobenzidine                      73.
31.  2,4-Dichlorophenol                      •   74.
32.  1,2-Dichloropropane                        75.
33.  l,2-Dichloropropylene(l,3HDichloropropene) 76.
34.  2,4HDimethylphenol                         77.
35.  2,4-Dinitrotoluene                         78.
36.  2,6-Dinitrotoluene                         79.
37.  1,2-^iphenylhydrazine                      80.
38.  Ethylbenzene                               81.
39.  Pluoranthene                               82.
40.  4-chlorophenylPhynyl Ether                 83.
41.  4HBromophenylPhenyl Ether                  84.
42,  Bis (2-chloroisopropyl) Ether
43.  Bis (2-chloroethO3cy) Methane
44.  Jfethyl Chloride(Chlororaethane)
Methylbrcmide (Brononethane)
Bromoform  (Tribromomethane)
Dichlorobroroctnethane
Trichlorofluorcmethane
Dichlorodifliioromethane
Chlorodibrxxnorte thane
Hexachlorobutadiene
Hexachlorocyclcpentadiene
Isophorone
Naphthalene
Nitrobenzene
2-Nitrophenol
4-«itrophenol
2,4-Dinitrophenol
4,6-Dinitro-o-cresol
N-*Iitrosodimethylami.ne
KH«itrosodiphenylamine
N-Nitrosodi-*I-Propylamine-
Pentachlorophenol
Phenol
Butyl Benzyl Phthalate
Dins-Butyl Phthalate
Di-N-Octyl Phthalate
Diethyl Phthalate
Dimethyl Phthalate
1,2-Benznathracene (Benzo (A) Anthracene)
Benzo(A)Pyrene (3,4-fienzo-Pyrene)
3,4-Benzofluoranthrene(Benzo(B)Pluoranthene)
11,12-Benzofluoranthene(Benzo(K)Fluoranthene)
Chrysene
Acenaphthylene
Anthracene
1,12-Benzoperylene(Benzo(GHI)-Perylene)
Fluorene
Phenanthrene
1,2,5,6HDibenzathracene(Dibenzo (A,H)Anthracene
Indeno(1,2,3-DC)Pyrene(2,3-o-PhenylenePyrene)
Pyrene
                                               VEI-44

-------
TABLE 7-14 (Continued)
85.  Ttetrachloroethylene                       100.
88.  Vinyl Chloride (Chloroethylene)           101.
89.  Aldrin                                    103.
90.  Dieldrin                                  104.
91.  ailon3ane(TechnicaWixtureandMetabolitEs) 105.
92.  4,4'HDOT                                  106.
93.  4,4'HDDE (P,P'-DDX)                       107.
94.  4f4'-DDD (P,P'-TDE)                       108.
95.  Alpha-Endosulfan                          109.
96.  Beta-Endusulfan                           110.
97.  Endosulfan Sulfate                        111.
98.  Endrin                                    112.
99.  Endrin Aldehyde                           113.
                                               129.

Xylenes
Alkyl Epoxides
             Heptachlor
             Hepthachlor Epoxide(BHC-Hexachlorocyclohexane)
             Beta-*HC
             Gamma-BHC (Lindane)
             Delta-BHC (PCB-Polychlorinated Biphenyls)
             PCB-1242 (Arochlor 1242)
                      (Arochlor 1254)
                      (Arochlor 1221)
                      (Arochlor 1332)
                      (Arochlor 1248)
                      (Arochlor 1260)
                      (Arochlor 1016)
PCB-1254
PCB-1221
PCB-1332
PCB-1248
PCB-1260
PCB-1016
Itoxaphene
2,3,7,8-Tetrachlorodibenzo-P-Dioxin
                                                 (TCDD)
     VII-45

-------
            TABLE 7-14  (Continued)
DETECTED AT TRACE LEVELS  IN RAW WASTE  STREAMS
             114. Antimony
             115. Arsenic
             117. Beryllium
             123. Mercury
             125. Selenium
             127. Thallium
                         VII-46

-------
                                        TABLE 7-14  (Continued)
                         DETECTED AT LEVELS TOO LOW TO REQUIRE TREATMENT*
  8  1,2,3 Trichlorobenzene
 11  1,1,1 Trichloroethane
118  Cadmium
119  Chromium
124  Nickel
126  Silver
121  Cyanide
     Phenols
     Biochemical Ojcygen Demand
Mean Concentration (mg/1)

        0.123
        0.12
        0.21
        0.02
        0.033
        0.013
        0.041
        0.14
        983.
Flow Weighted
Mean Concentraiton (mg/1)

        0.049
        0.037
        0.03
        0.025
        0.037
        0.015
        0.041
        0.12
        15.5
    These parameters do not require treatment because (1) the raw waste concentration
    is less than the daily maximum figure (See Table 7-17) or (2) no performance data is
    available for treatment of these parameters.
                                            VII-47

-------
                                          TABLE 7-15
                               MICA PAPER MATERIALS SUBCATEGQRY
                                     POLLUTANT PARAMETERS

                               NOT DETECTED IN RAW WASTE STREAMS
TOXIC CRGANICS

 1.  Acenaphthene                                 46.
 2.  Acrolein                                     47.
 3.  Acrylonitrile                                48.
 5.  Benzidine                                    49.
 6.  Carbon Tetrachloride (Tetrachloromethane)    50.
 8.  1,2,4-Trichlorobenzene                       51.
 9.  Hexachlorobenzene                            52.
10.  1,2-Dichloroethane                           53.
12.  Hexachloroethane                             54.
13.  1,1-Dichloroethane                           55.
14.  1,1,2-JTrichloroe thane                        56.
15.  1,1,2,2-Tetrachloroethane                    57.
16.  Chloroethane                                 58.
17.  Bis(Chloromethyl)Ether                       59.
18.  Bis(2-Chloroethyl)Ether                      60.
19.  2-Chloroethyl Vinyl Ether  (Mixed)            61.
20.  2-Chloronaphthalene                          62.
21.  2,4,6-^ichlorophenyl                        63.
22.  Parachlorometa Cresol                        64.
24.  2-Chlorophenol                               65.
25.  1,2-Dichlorobenzene                          69.
26.  1,3-Dichlorobenzene                          70.
27.  1,4-Oichlorobenzene                          71.
28.  S/S'-Dichlorofaenzidine                       72.
29.  1,1-Dichloroethylene                         73.
30.  1,1-Trans-Dichloroethylene                   74.
31.  2,4-Dichlorophenol                           75.
32.  1,2-Dichloropropane                          76.
33.  l,2-Dichloropropylene(l,3^)ichlorc3prcpene)   77.
34.  2,4-Dimethylphenol                           78.
35.  2,4-Dinitrotoluene                           79.
36.  2,6-Dinitrotoluene                           80.
37.  1,2-Diphenylhydrazine                        81.
39.  Fluoranthene                                 82.
40.  4-Chlorophenyl Phenyl Ether                  83.
41.  4-Bronophenyl Phenyl Ether                   84.
43.  Bis(2-<3iloroethoxy)Methane                   88.
45.  Methyl Chloride (Chloromethane)              89.
                                                  90.
Methylbronu.de (Bromomethane)
Bromoform (Tribrornomethane)
Dichlorobrononethane
Trichlorofluoromethane
Dichlorodifluoromethane
Chlorodibromomethane
Hexachlorocyclopentadiene
Hexachlorocyclopentadiene
Isophorone
Napthalene
Nitrobenzene
2-Nitrophenol
4-Nitrophenol
2,4-Dinitrophenol
4,6-Dini tro-o-cresol
N-Nitrosodimethylamine
N-Nitrosodiphenylamine
N-Nitrosodi-N-Propylamine
Pentachlorophenol
Phenol
Di-n-octyl Phthalate
Diethyl Phthalate
Dimethyl Phthalate
1,2-Benzanthracene(Benzo(A)Anthracene)
Benzo(AJPyrene(3,4-Benzo-Pyrene)
3,4-Benzofluoranthrene(Benzo(B)Fluoranthene)
11,12-Benzofluoranthene(Benzo(K)Fluoranthene
Chrysene
Acenaphthylene
Anthracene
1,12-Benzoperylene(Benzo(GHI)-Perylene)
Fluorene
Phenanthrene
l,2,5,6-Dibenzathracene(Dibenzo(A,H)Anthrace
Indeno(1,2,3-DC)Pyrene(2,3-o-PhenylenePyrene
Pyrene
Vinyl Chloride (Chloroethylene)
Aldrin
Dieldrin
                                                 VII-48

-------
                                         TABLE 7-15  (Continued)
  91.   Chlordane (Technical Mixture and          103.
        Metabolites)                             104
  92.   4,4'-Dnr                                  io5.
  93.   4,4'-DDB (P,P'-DEK)                        106.
  94.   4,4'-DDD (P,P'yTDE)                        108.
  95.   Alpha-Endosulfan                          109.
  96.   Beta-Endusulfan                            HO.
  97.   Endosulfan Sulfate                         111
  98.   Endrin     .                               112.
  99.   Endrin Aldehyde                            113]
100.   Heptachlor                                129.
101.   Heptachlor Epoxide (BHC-Hexachlorocyclc-
        hexane)
Beta-BHC
Gamma-BBC (Lindane)
Delta-BHC (PCB-Polychlorinated Biphenyls)
PCB-1242 (Arochlor 1242)
PCB-1221 {Arochlor 1221)
PCB-1332 (Arochlor 1332)
PCB-1248 (Arochlor 1248)
PCB-1260 (Arochlor 1260)
PCB-1016 (Arochlor 1016)
Toxaphene
2,3,7,8-Ttetrachlorodibenzo-P-Dioxin (TCDD)
Xylenes
Alkyl Epoxides
                                               VII-49

-------
           TABLE 7-15 (Continued)
DETECTED AT TRACE LEVELS IN PAW WASTE STREAMS
           4.  Benzene
           7.  Chlorobenzene
          23.  Chloroform
          38.  Ethylbenzene
          66.  Bis(2H3thylhexyl)Phthalate
          67.  Butyl Benzyl Phthalate
          68.  Di-n-butyl Phthalate
          85.  Tetrachloroethylene
          86.  Toluene
          87.  Trichloroethylene
         114.  Antimony
         115.  Arsenic
         117.  Beryllium
         123.  Mercury
         125.  Selenium
         126.  Silver
         127.  Thallium
               Cobalt
               Yttrium
                       VII-50

-------
                          TABLE 7-15  (Continued)
             DETECTED AT LEVELS TOO IOW TO REQUIRE TREATMENT*
     Parameter

 11. 1,1,1-^Trichloroethylene
 44. Methylene Chloride
118. Cadmium
119. Chromium
120. Copper
122. Lead
124. Nickel
128. Zinc
     Aluminum
     Barium
     Boron
     Iron
     Manganese
     Molybdenum
     Tin
     Titanium
     Vanadium
     Total Organic Carbon
Mean Concentration (mg/1)**

          0.18
          0.029
          0.001
          0.004
          0.011
          0.013
          0.023
          0.017
          0.26
          0.013
          0.052
          0.107
          0.004
          0.002
          0.027
          0.002
          0.028
          1.9
 * = These parameters do not require treatment because 1) the raw waste
     concentration is less than the daily maximum figure (See Table 7-17. )-, or
     2) no performance data is available for treatment of these parameters.
** =
     Only one sampled stream, Plant ID 43055
                                    Vli-51

-------
Performance of Observed Treatment Systems

The actual performance of Level 1 and Level 2 treatment systems
that have been sampled for the dielectric materials subcategory
is presented in Table 7-16.  Data from individual effluent streams
utilized in the development of this table are presented in Tables
7-9 through 7-13.

Performance of Recommended Treatment Systems

Performance of the recommended treatment systems  is shown in Table
7-17.  These performance figures are based upon data  from treatment
component performance transferred from the metal  finishing industry.
This performance data can be transferred to the dielectric materials
industry because of the similarity of the raw wastes.  Section XII
describes the treatment components and the performance levels
achievable by each component.  A comparison of observed versus
recommended treatment performance is presented in Table 7-18.

Estimated Cost of Recommended Treatment Systems

The determination of estimated costs for recommended  treatment sys-
tem components is discussed in Section XIII of this report.  Tables
7-19 through 7-24 show estimated costs for each of  the recommended
treatment systems for treatment of dielectric fluid materials waste-
waters that were discussed previously.  Table 7-25  shows estimated
costs for a Level 1 treatment system for the treatment of mica
paper dielectric manufacturing.  Flow rate input  for  treatment
costs characterize small, medium, and large facilities in the dielec-
tric materials subcategory.
                               VI1-52

-------
                                     TABLE 7-16
                      PERFORMANCE OF OBSERVED TREATMENT SYSTEMS

                Dielectric Subcategory (Excluding Mica Paper) - mg/1

     Parameter

  6. Carbon Teta
 30. l,2-Trans-<
 44. Methlene Cl
 87. Trichloroel
107. PCB 1254
120. Copper
122. Lead
128. Zinc
     Total Susp«
     Oil and Grease
Level 1*
achloride ND**
ichlorethylene ND
loride 0.93
hylene ND
<0.01
0.1
<0.04
0.104
nded Solids 11.
ase 3.5
ic Carbon 16.5
Level 2**
ND
0.046
0.0113
0.0052
ND
0.01
0.048
0.70
47^ ****
3 g****
g 5****
                          Mica Paper Dielectric Manufacture
     Parameter
     Total Suspended Solids
                                  Level l*****

                                   7.2
 ND**
  ***
*****
Mean of two sampled streams, Plant ID 19563
Not Detected
Flow Weighted Mean Concentration, Final Effluent (Plant ID 30082, Stream 03553,
03557, 03549, and M22-10)
Mean Concentration, Plant ID 30082, Stream M22-10
Plant ID 43055, mean concentration
                                         VII-53

-------
3
            B  2

            ^Hs
             (3 QJ r-l


            fill
            Sf to QJ ^1

            lili

              j
              JJ

              2
            o oo to o\
                           O O ID O
                              m CM
            B 2
            : d)

            l£<
                         Of  •-<
   I (0 U

   1 Is

    U
5
4J
                         |
                  >H ^3 w QJ  CP

                  lilt!
                    i e c i- p

                    i ,5 rH 04  )d
                  o  5
                 (D **|^  fl
                i m C
                ,3s  jj


                ;SI  g
                     (0
                 i8 "H  -H


                 af  2
                 os  §
                             VII-54

-------
                                          TABLE 7-18

                            COMPARISON OF OBSERVED VS. RECOMMENDED
                                       TREATMENT SYSTEMS
               Dielectric Materials Subcategory - Effluent Concentration (rag/1)
                               (Excludes Mica Paper Manufacturing)
Parameter

  6.  Carbon Tetrachloride
 30.  1,2-Trans-dichloroethylene
 44.  Methylene Chloride
 87.  Trichloroethylene
107.  PCB 1254
      Total Toxic Organics
120.  Copper
122.  Lead
128.  Zinc
      Total Suspended Solids
      Oil & Grease
      Total Organic Carbon
                            Observed
                            Level 1*
                            Treatment

                              ND**
                              ND
                             0.93
                              ND
                            <0.01
                             0.93
                             0.1
                            <0.04
                             0.104
                            11.
                             3.5
                            16.5
Recommended
Level 1
Treatment

  NA***
  NA
  NA
  NA
  NA
 0.940
 0.814
 0.005
 0.551
17.8
11.9
  NA
Observed     Recommended
Level 2****  Level 2
Treatment    Treatment
  ND
 0.046
 0.0113
 0.0052
  ND
 0.063
 0.01
 0.048
 0.70
47t *****
 3ag*****
 8]§*****
  NA
  NA
  NA
  NA
  NA
 0.04
 0.368
 0.034
 0.247
12.7
 7.1
  NA
      Total Suspended Solids
                            Mica Paper Manufacturing

                             7.2*****    17.8
    *
 ND**
NA***
 ****

*****
Mean of two sampled streams, Plant ID 19563
Not Detected
Not Available
Flow weighted mean concentration, Plant ID 30082, (Samples # 03553, 03557,
03549, and M22-10)
Single stream value, See Table 7-16.
                                        VII-55

-------
04 CO
O EH
O CO
w o
EH CJ
m 2:
   en
en
r-H Cn
 !  J
r* <^J
   M
u a;
j ca
OQEH
      S
      EH
CJ
en
v^   m
                      vo
                      00
                            IT)
                            00
                            OO
                                            r-
                                            o
                VO    iH
                n    CM
                oo    vo
                VO    rH
oo
                                                    vo
                                                    r-
                                        r-
                                          •
                                        o
           oo
           o
   cq
O tw >
M CLJ ta
OS W t-3

u cj
oa ca

u <,

z*
                                            in

-------
   s£ en
   O EH
   C3 CO
   Ed O


   S°
   O EH
   CO 23  EH
   j"~i pd  21
   en s  a
O    EH  S
cvi c/3 t<  EH
 I  1.3 El  rfl

^ M EH  OS
Cd OH     EH
J Cd EH
OQ EH 2  -H
< •< H

      J  Cd
   U &4  >
   M fa  td
   p^ ptj  f--^

   Soi
   Ed Ed

   Ed <

   QS
in
o
CN
o    m
%^   co
o
O
      CO
OO    rH
r-
ro
cr>
 •
VD
CN
•^J1

o
r-
vo
                          in
                          S
                              VII-57

-------
   gen

   O CQ
   a o
   EH O

   O EH
   CO IS EH

   to S W
H    EH S
CM to rij EH
 I  J H rtj

   M EH OS

J W EH
CQ EH 2IrH
rij rtj W
EH S D tJ

   O Ca >
                        00
                        oo
 *    oo
a\    CM
00    rH
CN    r-
 ••    cr»
•H    iH
                                         O
                                         00
                                         vo
r--
oo
                                               in
                                               ro
O
CM
00
 •
IT)

CM
                                                                    CM
                     CN
                     CM
               O    CO
                .    ^j.
               O    00
O O!
H ca

H rtj
H S
                                               in

                                               I
                                                        VII-58

-------
  cn




CN
CN
1

Ed
J-4
CQ
^
£-(


EH
<
D
CQ
D
co

cn

—
CN
Ed En
O4 ©
M O
fri CJ

11
§ ^H
E co
o
CN
n


o
o
vo
00








r-
n

•
00
rH
00
^*
vo








in in
CN r~-
r-l •
• CO
00 VO
vo cr>
CO 00
«* CN
in rH








cn

CO
CN
vo
in










**
•H
rf
•
ro
CN
n
n








in
vo
•
1
ro
CN






04 Ed
O 04
Cd Ed
Cd <
z*
                            8
                                 in
                        EH  8   g
                        03       <


                        J  M   S


                        1
                                       VII-59

-------
OH CO
8
                      tn
                      o
                      01
pass-en
a HZ
CQ s EJ
on
fa EH

< w
OS

O «
u ca
     a
     >
     ca
£    §
       •
      CM

o    in

*    $
r-t    VO
in   in

oo   m
                                      a
                                      00
                                           8
                                           CM
                                                         CM
                                                         CO
vo   vo
CM   rH
           CM
                                                              VO
                                                  VII-60

-------
IS
o
03

CO

en
CO

EH
CO

o
ca
      EH  2

      <  EH
      Cx3  rfl
      a;  ta
        CN
                          vo

                          s
                          
                                         o
                                         
                                         VO
P
 •


s
vo
                                                    CSI
                                                    vo
                                                    in
vo
o

9
                                                                CM

                                                                O
   o
   M
   OS
   EH
   o
   M
   J
   ta
         ta
la
w

1
                                                        VII-61

-------
   tf en
   O EH
   o en
            ia
                              in
                              CO
CQ 3 EH EH


on s w 
-------
BENEFIT ANALYSIS

The following is an analysis of the industry-wide benefit esti-
mated to result from applying the levels of treatment previously
discussed in this section to the total process wastewater generated
by the dielectric materials subcategory.  This analysis  estimates
the total amount of pollutants that would not be discharged  to the
environment if each of the levels of treatment were  applied  on a
subcategory-wide basis.  An analysis of the benefit  versus estimated
subcategory-wide cost for each of the treatment levels will  also be
provided.

Industry-wide Costs

By multiplying the investment and annual costs of each level of
treatment at various flow rates by the number of plants  in each  flow
regime in the industry, a subcategory-wide cost figure is estimated
(Table 7-26).  This figure represents the cost of each treatment
level for the entire dielectric materials subcategory.   This calcu-
lation does not make any allowance for waste treatment that  is
currently in-place at dielectric materials facilities.

Industry-wide Cost and Benefit

Table 7-27 presents the estimate of total cost  to the dielectric
materials subcategory to reduce pollutant discharge.  The calcu-
lations of industry-wide cost we're determined by multiplying
the investment and annual costs for each level of treatment  by  the
number of plants discharging wastewater or potentially discharging
wastewater in the case of dielectric fluid use.  This  table  also
presents the benefit of reduced pollutant discharge  for  the  dielec-
tric materials subcategory resulting from the application of the  two
levels of recommended treatment.  Benefit was calculated by  multiply-
ing the estimated number of liters discharged annually by  the sub-
category times the performance attainable by each of the recommended
treatment systems as shown in Table 7-17.  Table 7-16 presents  the
performance attained by observed treatment of mica  paper wastewaters.
Values are presented for each of the selected subcategory pollu-
tant parameters.

The column "Raw Waste" shows the total  amount of pollutants  that
would be discharged annually to the environment  if  no  treatment
was employed by any facility,in the  industry.   The  columns  "Levels
1 and 2 treatment" show the amount of pollutants  that  would  be
discharged if any one of these  two levels of  treatment were  applied
to the total wastewater estimated  to be discharged  by  the  dielectric
materials subcategory.
                                 VEI-63

-------
INVESTMENT***

Annual Costs

   Capital Costs
   Depreciation
   Operation & Maint.
   Energy and Power

   Total Annual Costs
           TABLE 7-26

DIELECTRIC MATERIALS SUBCATEGORY
       INDUSTRY-WIDE COST

      Dielectric Fluid Use

         Level 1 Treatment

         $10,317,046.
         $   869,885.6
         $ 2,063,409.1
         $ 1,763,425.8
         	0

         $ 4,696,720.0
Level 2 Treatment

$114,700,000
$  9,670,840.9
$ 22,939,586.
$ 18,437,510.0
   1,172,767.7

$ 52,220,704
***COST ESTIMATES BASED UPON AN ESTIMATE OP 70 PLANTS CURRENTLY USING DIELECTRIC FLUID

                         Mica Paper Dielectric Manufacturing
INVESTMENT*

Annual Costs

   Capital Costs
   Depreciation
   Operation & Maint.
   Energy and Power
   Total Annual Cost
         $444,312**
         $ 37,455.5
         $ 88,862.4
         $216,000.0
         $      0
         $342,317.9
*  DOES NOT INCLUDE COST OF IAND OR LINING (IF NEEDED)
** COST ESTIMATE BASED ON 18 PLANTS CURRENTLY MANUFACTURING MICA PAPER DIELECTRICS
                                     VII-64

-------

                                              i
S~
        S
             1-1 m rg t- tn
             oo r- o in •-<
.	ir. o\ p» f»
• r-t      T «O U>
         •H ^" PI
        2
        S
               ' o 
-------

-------
                          SECTION VIII

                ELECTRIC LAMP SUBCATEGORY DISCUSSION
INTRODUCTION

This discussion of the electric lamp industry consists of  the
following major sections:

          Products
          Size of the Industry
          Manufacturing Processes
          Materials
          Water Usage
          Production Normalizing Parameter
          Waste Characterization & Treatment In Place
          Potential Pollutant Parameters
          Applicable Treatment Technologies
          Benefit Analysis

Data contained in this section were obtained from  several  sources.
Engineering visits were made to ten plants within  the  subcategory.
Wastewater samples were collected from  five of these ten
facilities.  A total of thirty-seven electric lamp manufacturing
plants were contacted by  telephone.  A  literature  survey was
also conducted to ascertain differences between types  of electric
lamp products, process chemicals used,  and typical manufacturing
processes.

PRODUCTS

The electric lamp subcategory includes  the manufacture of  incan-
descent, fluorescent, and electric discharge  (other than fluores-
cent) lamps, as well as the manufacture of tungsten filaments  for
use in incandescent and fluorescent lamps.  The major  lamp product
areas are described in accordance with  the manner  in which they
produce radiant energy within the visible  light spectrum.   Because
of the diversity in artificial lighting requirements,  lamps use
a variety of raw materials  for specific applications.  Lamps
are used for general lighting and display, photography and
projection, transportation  lighting, photochemical and photo-
biological processes, as  sources of infrared  and  ultraviolet
electromagnetic radiation,  and as circuit  components  in  electronic
circuitry.
                             VIII-1

-------
 There are two basic types of artificial light production:   incandes-
 cence and luminescence.  The four primary lamp manufacturing pro-
 duct areas fall into these two basic types of artificial light pro-
 duction.  These product areas are:  (1) tungsten filament lamps
 (incandescent), (2) electric discharge lamps other than fluores-
 cent lamps (luminescent), (3) fluorescent lamps (luminsecent), and
 (4) filament manufacture (incandescent and luminescent).

 Incandescent tungsten filament lamps operate on the principle of pas-
 sing an electric current through a conductor, resulting in  the pro-
 duction of heat.  Light is emitted if enough electrical energy is
 supplied to raise the temperature above approximately 500°C.

 There are two types of lamps that produce luminescence:  fluores-
 cent and electric discharge other than fluorescent.  Electric
 discharge lamps produce mainly radiant energy.  A gas discharge
 light source is produced by providing a voltage between a cathode
 and an anode.  Electrons emitted from the cathode surface are
 accelerated by the electric field and collide with gas atoms,
 elevating valence electrons to higher energy states.  After a
 period of time,  the electrons drop to lower energy states,  emit-
 ting photons of light.   The wavelength of these photons is determined
 by the difference between levels occupied by the electrons.

 Fluorescent lamps are electric discharge lamps that utilize a low
 pressure mercury arc in argon.   Through this process,  the lowest
 excited  state of mercury efficiently produces short wave ultra-
 violet radiation at 2537 angstroms.   Phosphor materials commonly
 used such as calcium halophosphate and magnesium tungstate  absorb
 the ultraviolet photons iftto their crystalline structure from which
 they are re-emitted as  visible  white light.

 Based on the  manner in  which  they produce radiant  energy within
 the visible  light spectrum,  the primary lamp numufacturing  product
 areas are as  follows:

           Incandescent  lamps  for use as a light, heat,  or
           infrared  radiation  source.

           Fluorescent lamps which are  specific applications  of
           electric  discharge  lamps  for  use  as a  source  of light.

           Electrical discharge  lamps other  than  fluorescent  lamps
           for use as a  light, heat,  infrared,  or ultraviolet
           radiation  source.

      .     Coiled  tungsten filaments  for use  in incandescent  and
           hot cathode fluorescent lamp  manufacture.

The .electric  lamp subcategory involves  products comprising the
entire SIC 3641, Electric Lamps,  and also includes  portions  of
SIC 3699,  Electrical Equipment  and Supplies,  Not Elsewhere Clas-
sified, for plants that only manufacture coiled tungsten fila-
ments.  The major products of the electric lamp subcategory  are
                            VIII-2

-------
as follows:

          Photographic Incandescent Lamps

          - Photoflash
          - Projection
          - Photo-Enlarger
          - Photoflood

          Large Incandescent Lamps

          - General Lighting
          - Reflector
          - Infrared
          - Traffic and Street
          - Decorative

          Miniature Incandescent Lamps

          - Automotive
          - Flashlight
          - Panel

          Electric Discharge Other  than  Fluorescent

          - Photochemical
          - Photo-biological
          - Indicator Glow
          - Circuit Components
          - Sunlamps
          - High  Intensity General  Lighting

          Fluorescent

          - Hot Cathode
          - Cold  Cathode

          Christmas Tree  Lamps

          Coiled  Tungsten Filaments

 SIZE  OF  THE INDUSTRY

 The size of the  industry  is  defined by the number of plants and
 the number of production  employees  for plants engaged in the manu-
 facture  of electric  lamps,  SIC  3641,  and tungsten filaments, SIC 3699

 Number of Plants

 It is estimated  that  there are  between 125 and 168 plants engaged
                              VIII-3

-------
 in the manufacture of electric lamp products in SIC 3641.
 In addition, a number of these plants also manufacture tungsten
 filaments.  To avoid double counting, plants manufacturing both
 lamps and filaments are counted in SIC 3641.  The number of
 plants is based on the following two sources:

           Department of Commerce 1977 Census of Manufactures
           (Preliminary Statistics).  It is estimated from this
           data base that 168 plants are engaged in the manufacture
           of electric lamp products.

           The 1977 Dun and Bradstreet listing of companies
           whose primary products area is in SIC 3641.   After
           removal of known non-manufacturers of electric lamp
           products, 125 plants are estimated to be involved in
           the manufacture of electric lamp products.

 It is estimated that 9 plants are engaged in the manufacture of
 tungsten  filaments as applicable to the electric lamp  subcategory
 and included in SIC 3699.  These estimates are based on the
 following 2  sources:

      .     Department ;of Commerce 1977 Census of Manufactures
           (Preliminary Statistics).  It is estimated from this
           data base that 9 plants are engaged in the manufacture
           of electric lamp components.   Included in this sub-
           classification are the manufacture of lead-in wires,
           supports, electrodes,  and tungsten filaments.

           Under this  current study, a review of both actual
           plant visits and plant telephone contacts has led
           to an estimate of 9 plants involved in the manu-
           facture  of  electric lamp components.   These  com-
           ponents  include;  filaments,  filament supports,  elec-
           trodes,  and  lead-in wires.

Number of  Employees

It  is estimated that  25,300 production  employees are engaged in
the manufacture of  electric lamps  as  described  under SIC  3641.
This  estimate  is based on information  from the  Department of
Commerce 1977  Census of Manufactures  (Preliminary Statistics).

Plants that  have been  visited during  this  study have from 70 to
400 production employees  each.   These plants  could be  described as
medium to  large size facilities.
                             VIII-4

-------
It is estimated that 1917 production employees are engaged in
the manufacture of tungsten filaments as described under SIC
3699.  This estimate is derived from two facilities contacted
during this study employing 125 and 300 production workers re-
spectively.  These plants are medium to large size facilities.
From the estimate of 9 plants engaged in the manufacture of tung-
sten filaments, together with an average of 213 production em-
ployees for those two plants contacted, it is estimated that 1917
employees are engaged in tungsten filament manufacture.

Production Rate

Production information encompassing nearly all types of electric
lamps and electric lamp components is presented in Table 8-1.
This information was obtained from the Department of Commerce
1977 Census of Manufactures (Preliminary Statistics).

MANUFACTURING PROCESSES

There are two common characteristics of all electric light sour-
ces:  finite lamp life and diminishing luminosity with  lamp age.
Manufacture of all lamp types seeks to optimize the.generation
of light, the efficiency of illumination, and the reliability  (or
lamp-life).  The following description of manufacturing processes
for  the electric lamp products area includes both electric lamp and
electric lamp component manufacture.

Discussion of electric lamp manufacturing is based on  the
primary lamp types:  incandescent, electric discharge  other than
fluorescent, and fluorescent.  Electric lamp component  manufacturing
is restricted to filament manufacturing only.  Other electric
lamp components involve electroplating and other processes not  ap-
plicable to this study.  However, a brief discussion is  included
on lamp base manufacture  (part of the Metal Finishing-  Category)
because of its importance as an electric  lamp component.

Incandescent Lamp Manufacture

Most lamp-making operations are performed by highly  automated
machines generally consisting of  a mount  machine, a  seal  and
exhaust machine/ and a finish machine.  Incandescent lamp manu-
facturing  is a dry process requiring"no process water.   A typical
incandescent lamp manufacturing process is described below and
depicted in Figure 8-1.

The  mount  machine assembles a glass  flare, an  exhaust  tube,  lead-
in wires,  and molybdenum  filament supports.  Tjtie  lead-in wires  are
heat pressed into the glass and  the  components  are  mechanically
constructed forming  a stem assembly.  The coiled  filament is
attached to the lead-in wires and support wires where  applicable.
The  filament is then coated with  a getter solution  which is  an
absorption medium for impurities.  When  the  lamp  is eventually
flashed, the getter  solution  is  activated,  absorbing impurities
and  moisture from the atmosphere  of  the  lamp.   This entire
unit becomes a mount assembly.
                            VIII-5

-------
                          TABLE 8-1


            PRODUCTS AND PRODUCT CLASSES, QUANTITY
           AND VALUE OP SHIPMENTS BY ALL PRODUCERS
                  OF ELECTRIC LAMP PRODUCTS
                                         Millions
                                         of Lamps
                                      Per Year (1977)
                    Value
                 in Millions
              of Dollars (1977)
SIC  3641
       Photographic  Incandescent
        Lamps

       Large  Incandescent Lamps

       Miniature  Incandescent
        Lamps

       Electric Discharge Lamps

           General  Electric Discharge

           Hot Cathode  Fluorescent

           Cold  Cathode Fluorescent

       Christmas  Tree Lamps

       Other  Lamp Products Not
        Elsewhere Classified
SIC 3699
      Electric Lamp Components- -
        Supports, Filaments,
        Electrodes, Lead-in Wires
2198.4



1720.0

1147.1





 181.6

 295.7

 N/A

  N/A

  N/A





  N/A
307.1



585.7

285.9





123.5

324.4

 53.8*

 N/A

 N/A





173.8
N/A * Not Available                                       ;

  * s This value .denotes cold cathode fluorescent and other  lamp
      products not elsewhere classified.  These categories were
      ^combined to avoid disclosure of individual companies.
                             VIII-6

-------
   Glass Bulb
       *	
Glass Bulb Coat
   Fuse Mount
     To Bulb
 Glass Tube
     i
 Glass Flare
 Manufacture
                                    1
                              Mount Assembly
                                    1
Filament Coat
                                                Lead Wires,  Filament,
                                                 & Filament Support
     Anneal
       I
  Exaust &
        Gas Fill
       I
    Seal Lamp
Solder Lead Wire
    To Base
 Base Attachment
       1
   Age & Test
        f
      Ship
                       FIGURE  8-1
                INCANDESCENT LAMP MANUFACTURE
                          VIII-7

-------
A  glass  bulb is  electrostatically coated with silica and the
bulb  and mount are connected at the exhaust and seal machine.
The glass bulb is lowered over the mount.  The flared rim of
the mount is then sealed to the neck of the bulb with a natural
gas flame.

The bulb assembly is  annealed,  exhausted, filled with an inert
gas,  and sealed  with  a natural  gas flame.  The inert gas is
usually  a combination of argon  and nitrogen,  which reduces tung-
sten  evaporation and  hence "bulb blackening".  In addition, the
gases allow  higher filament temperature and higher efficiencies
without  sacrificing lamp life.

The finishing  machine solders the lead wires  to the metallic base
which is then  attached by a phenolic resin cement or by a mech-
anical crimping  operation.

The finished lamp is  aged and tested by illuminating it with
excess current for a  period of  time to stabilize its electrical
characteristics.   In  addition,  this process activates the getter
material to  absorb atmospheric  impurities within the glass en-
velope.   This  is  the  last.step  in the production process.

Electric Discharge (Other Than  Fluorescent) Lamp Manufacture

The wavelength spectrum of light from an electric discharge lamp
differs  considerably  from that  of an incandescent filament lamp.
Discharge lamps  concentrate radiation at particular wavelengths
which  are not  continuous.   Incandescent filament lamps produce
light over a wide,  continuous spectrum of wavelengths.

Electric discharge lamps emit different colors of light depending
on the kind  of gas used and its applied pressure.  Gases generally
used  include argon, neon,  xenon,  krypton, and vapors of sodium
and mercury.   Pressures applied may vary from a few microns to hun-
dreds of  atmospheres.   Electrode material usage varies according
to lamp  type,  with the most common being nickel,  tungsten,  and iron.

The efficiency of  a cathode may be improved markedly by the use
of an emissive coating.   This coating reduces the breakdown vol-
tage  and  consequently the  ionization time necessary to produce
a discharge  between the electrodes,  which in  turn is required to
make  the  lamp  glow.   Glass encapsulation can  be a simple glass
envelope, an arc  tube supported inside a glass enclosure control-
ling  the  internal  thermal  condition,  or a quartz  tube where high
temperatures and  pressures can  be maintained.
                            VIII 8

-------
Electric discharge lamps consist of a glass  envelope  or  tube  filled
with an inert gas and contain a set of electrodes  between  which
an arc discharge occurs.  In addition to  the gas atmosphere,  a
metallic vapor or halogen gas may be added  to some discharge  lamps.
In general, the manufacture of these lamps  are dry in their process-
ing operations as they apply to the E&EC  Category.  However,  the
manufacture of quartz mercury vapor lamps employs  a wet  process
at the conclusion of the manufacturing sequence.   A low  volume
of process wastewater is produced from a  hydrofluoric acid clean-
ing bath and a subsequent water rinse.  Wastewater produced contains
primarily fluorides and silica.  This wet process  is  performed on
the exterior of the quartz enclosure.  Because mercury is  confined
to within the finished lamp, it is detected  in the wastewater at
a very low concentration.                                       i

The manufacture of a miniature neon glow  discharge lamp  is des-     '
cribed below and depicted in Figure 8-2.  This manufacturing
process is representative of most other electric discharge lamps
(other than fluorescent) with one exception.  Instead of a con-
ventional lamp base, the lead wires extend  beyond  the lamp and
are attached directly to a power source.

Copper-clad steel lead wires are coated with an emissive mixture  of
barium and strontium carbonate.  The lead wires are placed within
a thin glass tube and the glass is heated and pressed around  the
leads.

The glass envelope is annealed at approximately 1000 °C,  removing  any
moisture present in the envelope.  Radio  frequency waves bombard  the
unit, break down the emissive coating, and  leave barium  oxide on  the
electrode surface.
The final operations consist of exhausting  the  glass
filling it with a neon-argon mixture  before tipping
tube.  This is done .by heating the  end  of the  tube,
away, and producing a pointed tip to  the top of the
electroplated lead wires are cleaned  in an  ammonium
hydrochloric acid solution  followed by  water rinsing
process removes the copper  oxide remnant on the lead
sulting from the annealing  operation.   The  lamps are
in an oven, aged, tested, and shipped.
                                                      envelope and
                                                     off the glass
                                                     drawing it
                                                     lamp.   The
                                                     chloride-
                                                        This
                                                      wires re-
                                                      then  dryed
Production of a neon  glow  discharge  lamp is highly automated and
totally dry  in its processing  operations that are part of the
E & EC Category.  Water  usage  is  restricted to electroplated lead
wire cleaning and subsequent water  rinsing which is part of the
Metal Finishing Category and as such will not be discussed further
in the E & EC Category.
                          VIII-9

-------
                Glass Tube     Copper-Clad Steel
Denotes Water
  Flow Path
                                Ba-Sr-Carbonate
                                    Coating
                                 Glass &
                                     Lead Hire
                                Press Assembly
                                  Bake  1050°C
                                    RF Wave
                                  Bombardment
                                  Air Exhaust
                                  and Gas Pill
Radioactive
  Dopant
Addition
                                 Lamp Cleaning
                                                      Acid Dump
                                Cold ELO Rinse
                               Aerated  H20 Rinse
                               Aerated H_0 Rinse
                              Aerated H20 Rinse
                                   Oven Dry
                                 Age and lest
                                      r
                                     Ship
                                 FIGURE 8-2

                         ELECTRIC DISCHARGE LAMP MANUFACTORE
                                    VIII-10

-------
Other electric discharge  lamps  such  as  quartz  mercury vapor lamps
are manufactured by a  similar process.   However,  annealing pro-
duces an aesthetically undesirable silica  deposit on the surface
of the quartz tube.  This deposit is removed by a strong hydro-
fluoric acid etching process, which  is  followed by a rinsing step.
However, the volume of wastewater is estimated to be very low
from this process.
                                                           \
Fluorescent Lamp Manufacture

These lamps are electric  discharge lamps used  to produce light.
They are usually in a  long tubular form with an internal coating
of phosphor material.   The discharge passing through the gas
atmosphere generates ultraviolet radiation of  approximately 2537
angstroms.  This radiation is used to excite the'phosphor materials
to emit visible light.

Although the manufacturing processes are similar,  there  are two
types of fluorescent lamps based on  differences in cathode design.

These two types are hot cathode and  cold cathode.   The manufacturing
of a hot cathode fluorescent lamp is described below and depicted
in Figure 8-3.  Hot cathode fluorescent lamps, which operate at 115
volts, utilise a coiled coil or triple  coil tungsten filament.   The
cathode usually receives  an electron emissive  coating -of barium,
strontium, and calcium carbonates.   During operation,  the cathode
is preheated by passing electric current through a starting device.
The hot cathode emits  electrons which flow to  the anode  thus passing
through the mercury vapor.  Cold  cathode  fluorescent lamps, which
operate at high voltages,  utilize a  cylindrical electrode which
may or may not be coated  with an emissive  coating material.  The
iron cathode normally  operates  at 150°C which  is "cold"  compared
to the small hot spot  on  a hot  cathode  type lamp,  which  is at about
900°C.  The cold cathode  lamp starts instantly without a starter,
uses low current, is of small diameter,  and usually is greater than
4 feet in length.  These  lamps  normally outlive hot cathode lamps,
because flashing, dimming,  and  the number  of starts do not affect
cold cathode lamp life as they  do hot cathode  lamps.  Because the
cold cathode manufacture  is primarily an electroplating  operation
performed at a plant other than that which manufactures  electric
lamps, its manufacture is not part of this study but is  included
in the Metal Finishing Category.  In both  hot  and cold cathode
fluorescent lamps, there  is an  inherent negative resistance as
in all electric discharge lamps.  For this reason,  ballasts are
used to control and regulate electric current.
                             VIII-11

-------
                            Glass Tube

*
SnCl4 Coat
                              Phosphor
                             Application
                           Glass Tube Dry
                             Brush Scrub
                                 or
                             Sponge Wipe
                                Bake
                             Glass Tube
                          Assemble & Seal
                           Air Exhaust  &
                              Gas Pill
                           Base Attachment
                            Silicone Coat
                            Age and Test
                                  t
                                Ship
                                                              Fumes
                                                             Glass Tube
Glass Flare
Manufacture
                                                            Mount Assembly
Denotes Water
  Flow Path
                                      FIGURE 8-3
                                FLUORESCENT LAMP MANUFACTURE
                                         VIII-12

-------
Hot cathode fluorescent  lamp manufacturing  is  a  highly  automated
process.  Glass tubing is  received  and  rinsed  with  deionized  water.
This removes any remnant dust or  silica material from the  surface
of the tubing.  Some of  the glass tubes receive  a tin chloride
coating for energy saving-low wattage lamps, while  others  bypass
this process and proceed directly to phosphor  application.  The
phosphor coating solution  is a combination  of  phosphors, an organ-
ic binder such as xylol, and often  a lacquer.  The  coating  solu-
tions can be water based or solvent based depending on  the  par-
ticular plant operation.   The coating solutions  are gravity fed
through the tubing and subsequently dried.  The  ends of the tubing
are cleaned by a mechanical brush scrub or  sponge wipe.  This
process may or may not require process  water usage.  The glass
tubing is then baked at  approximately 600°C.

Coiled tungsten filaments  receive an emissive  coating.  They  are
then assembled together  with lead wires, an exhaust tube,  a glass
flare, and a starting device to produce a mount  assembly.   The
mount assemblies are heat  pressed to the two ends of the glass
tubing.  The glass tubes are exhausted,  filled with an  inert  gas,
usually argon, and a drop  of mercury is added.   The lead wires
are soldered to the base,  and the base  is attached  to the  tube
ends, usually with a phenolic resin cement.

The finished lamp receives a silicone coating  solution  to  prevent
the lamp' from arcing.  The silicone coating solution may or
may not be discharged depending on  the  particular plant opera-
tion.  The lamp is then  aged and  tested, before  shipment.

Filament Manufacture

The filament is the most important  component of  all incandescent
lamps.  It is also an integral component of hot  cathode fluorescent
lamps.  Tungsten is the  preferred material  for filament usage
because it combines a very high melting point  of 3380°C with  a
relatively slow and consistent rate of  evaporation.  Filament.de-
sign is a balance between  light output  and  filament life..   The
higher the filament temperature,  the more light  is  emitted  and
the shorter the filament life.

Pure tungsten metal is prepared in  powder form,  pressed--into  ingot
bars, strengthened in an electric furnace,  and sintered.  The bars
of tungsten are then swaged and drawn to wire  as small  as  0.00114
centimeters in diameter.   Tungsten  filaments have a tensile strength
several times that of steel.  Tungsten  filament  manufacture is
described below and depicted in Figure  8-4.           -       a

Filament manufacture begins with  inspection of the  tungsten wire. 4
The wire is then wound on  mandrels  of molybdenum, steel, or copper-
clad steel.  Coiled filaments wound on  molybdenum are of the:, high-
est quality.  These filaments are usually used in hot cathode
                            VIII-13

-------
                                            Tungsten Wire
                                            Filament Coil
                                               Anneal
                                               Re-Coil
                                              Re-Anneal
           T
  Molybdenum Mandrel
     Dissolution
Copper-Clad Steel Mandrel


            t
Steel Mandrel
       HN03-H2S04

      Dissolution
     HCL

 Dissolution
        Rinse
          Rinse
                                                                                      Rinse
    Neutralization
                                          HCL Dissolution
                                            Neutralization
        Rinse
                                                Rinse
                                                Rinse
      Acid Clean
     Neutralization
  Acid  Clean
        Rinse
         Rinse
                                                                                      Rinse
     Alcohol Dip
       Acid Clean
                                                 Dry
         Dry
         Rinse
                                               'Dry
Denotes Water
  Flow Path
                                           FIGURE 8-4


                                    TUNGSTEN FILAMENT MANUFACTURE

                                              VIII-14

-------
fluorescent lamps and  in  automated,  high  speed,  incandescent lamp
manufacturing.  Filaments wound  on  copper-clad  steel  mandrels are
required when  the filament  cannot tolerate  iron poisoning.   These
filaments are  most commonly found in incandescent  lamps.   Fila-
ments for lower quality applications are  wound  on  plain  steel man-
drels and are  usually  used  in  incandescent  lamps as well.

The coiled filaments are  annealed,  re-coiled, re-annealed,  and
sent to mandrel dissolution.   Coiling of  filaments improves effi-
ciency by improving heat  concentration.   In addition,  coiling of
filaments reduces the  linear length requirement compared  to un-
coiled filaments, permitting use of fewer filament supports which
conduct heat from the  filament.

In all cases,  molybdenum  mandrels are dissolved in nitric  acid-
sulfuric acid  solutions and water rinsed. Most  plants  follow this
mandrel dissolution with  a  neutralization in sodium hydroxide.  At
one of the visited plants,  an  ammonia-water solution  was  used in
place of sodium hydroxide.  Neutralization  removes any excess acid
remaining on the coiled filaments and prevents  further etching of
the tungsten.  Another plant eliminated neutralization by  extensive
centrifugal water rinsing.                                  	

The coiled filaments then receive a nitric  acid or nitric  acid-
sulfuric acid  cleaning followed  by  an alcohol dip  in  methanol
or isopropanol.  The same plant  not only  eliminated neutralization
but also eliminated the alcohol  dip by using a  high speed,  centrifugal
drying process.  Prevention of water spotting on the  filaments is
always important.

Steel and copper-clad  steel mandrel  dissolution processes  are very
similar.  Copper-clad  steel mandrels,  however,  receive a prelimin-
ary nitric acid-sulfuric  acid  mandrel dissolution  to  dissolve the
copper plated  material that would otherwise require a  substantial
length of time in a hydrochloric acid solution.  In addition, this
step reduces tungsten  removal  which occurs  with protracted  exposure
to hydrochloric acid.

Both steel and copper-clad  steel mandrels are dissolved  in
hydrochloric acid followed  by  sodium hydroxide  or,  in  one  in-
stance, trisodium phosphate neutralization.  The coils then
generally receive an acid cleaning  in hydrochloric acid  and are
dried centrifugally or under hot lamps.   One plant used  sulfuric
acid-chromic acid cleaning  followed by a  methanol  dip  and  finally
hot lamp drying.  With the  exception of the alcohol dip, water
rinsing follows each of the mandrel  dissolution, neutralization,
and cleaning processes.   The completed coiled filaments  are then
sent to incandescent and  fluorescent lamp manufacturing.
                             VIII-15

-------
Lamp Base Manufacture

Lamp bases are pressed from sheet metal using a  lubricant oil.
Materials commonly used  include brass, stainless  steel,  aluminum,
and nickel-iron alloys.  The lamp bases then receive a detergent
cleaning to remove the lubricant oil.  The bases  are bright dipped,
dried•, and sent to lamp  manufacturing facilities  to become part of
the final lamp product.  Lamp base manufacture is  covered by  the
Metal Finishing Category.

MATERIALS

Materials used in the manufacture of lamps can be  classified  as
raw materials and process materials.  Raw materials include:
encapsulating materials, light emitting materials, mount materials,
filling gases, glass coatings, and lamp bases.   Process  materials
include mandrels for filament manufacturing and  cleaning solutions
for lamp manufacturing.

Encapsulating Materials

These materials are used to enclose the lamp components  and provide
an environment in which  to create light.

          Lime-Soda Glass - A soft glass used for  the bulbs
          of almost all  incandescent lamps and for general use
          in electric discharge and fluorescent  lamps.

     .    Borosilicate Glass - A hard glass used  for lamps that
          produce high temperatures, such as projection  lamps.
          The low thermal expansion of this glass  makes  it
          suitable for use in lamps that receive  changing
          temperatures as well, such as sealed beam lamps.

     .    Fused Silica - At extreme temperatures  and pressures
          such as 1000°C and 10 atmospheres, fused silica (quartz)
          is the best material for lamp construction because
          of its structural strength.  Arc tubes  of high pres-
          sure mercury and sodium lamps necessitate the  use
          of quartz enclosures.

          Glass Tubes -  Primarily a type of lime-soda glass
          used in fluorescent, miniature, incandescent,  and
          electric discharge lamps.

Light Emitting Materials

These materials vary considerably and are important because the
lamp characteristics are determined by the light  emitting materials.
                            VIII-16

-------
           Filaments - Used in incandescent and hot cathode
           fluorescent lamps.   Materials include: platinum,
           osmium,  tantalum,  tungsten,  and carbon.  Tungsten
           filaments are the  most commonly used because they
           can  be  operated at  higher temperatures than the
           others,  while still giving long life without ex-
           cessive  blackening  of the bulb or tube.

           Electrodes - Structures that provide a continual supply
           of electrons to the gas atmosphere of electric dis-
           charge  and cold cathode fluorescent lamps.   Tungsten,
           thoriated tungsten, and nickel are used in  electric
           discharge lamps.  Cold cathode fluorescent  lamps
           employ  a cylindrical electrode of iron.

           Emissive Coatings - These materials are usually alka-
           line earth oxides,  such as barium, strontium,  and cal-
           cium carbonates.  Often getters of pure barium or zir-
           conium  are included.  The emissive coatings allow
           cathodes to operate at muchvlower temperatures, thus
           increasing their efficiency.   Getters are used ,to re-
           move atmospheric contaminants within the environment
           of the  encapsulator.  In particular, emissive  coated
           cathodes are very susceptible to contaminants, and
           getter  solutions very often  are used in lamps  with
           emissive coated cathodes.

           Phosphors - These are solid  luminescent materials
           used in  fluorescent lamps and mercury lamps.
           Visible  light is produced by excitation of  the
           phosphor materials  by ultraviolet radiation from
           mercury  vapor.  Phosphor materials most commonly
           used include:  calcium halophosphates,  cadmium  and
           zinc sulfides,  fluorides,  silicates, borates,  tungstates
           and aluminates  of the alkaline earth metals such as
           barium,  strontium,  calcium,  magnesium,  and  beryllium.
           In addition,  activator ions  and organic binders are
           necessary in combination with the phosphor  materials.
           The common activator ions include:  manganese,  tin,
           lead, copper,  and antimony.   A common organic  binder
           is xylol.

Mount Materials

These consist of a stem press containing the lead wires  and
electrodes for* electric gas discharge  lamps and  the lead wires,
filaments, and filament supports in hot cathode  fluorescent and
incandescent lamps.
                             VIII-17

-------
      .    Lead Oxide Glass  -  Glass  containing approximately
          30% lead oxide  is used  as the  stem press assembly.   This
          glass contains  the  lead wires  and  is used because of
          its high electrical resistivity.

          Lead Wires - These  deliver the electric current to
          the light emitting  source.   A  typical lead wire from
          an incandescent lamp consists  of  the following:  a
          nickel  section  that supports the  filament, a dumet
          (dual-metal) section of a copper-clad,  nickel-iron
          alloy formed in the stem  press and matching the
          thermal expansion of glass,  a  nickel fuse hermetically
          sealed within, the glass,  and finally the copper lead
          which is soldered to the  contacts  of the lamp base.

      .    Filament Support  -  A molybdenum section supporting the
          tungsten filament to the  lead  wires and preventing
          excess vibration, which prolongs  the life of the filament,

      .    Starting Devices  -  These  are control mechanisms neces-
          sary to heat the  cathodes and  provide voltage to start
          a discharge in  hot  cathode fluorescent lamps.  A set of
          metallic electrodes is  commonly used in conjunction with
          a ballast that  limits the current  through the lamp.

Filling Gases

The type of gas and its applied pressure determine the spectral
emission of the radiant energy generated.

      .    Inert Gases - Gases of  argon,  neon, nitrogen, helium,
          krypton, and xenon  are  most  commonly used.  Gases are
          used in incandescent lamps to  suppress tungsten filament
          evaporation.  Gas is used in an electric discharge lamp
          to reduce the starting  voltage necessary to establish
          a discharge.

      .    Metallic Vapors - Many  electric discharge lamps use
          inert gases to  reduce the starting voltage.  These
          trigger the metallic vapors  such  as mercury and sodium
          that actually sustain this arc.

Glass Coatings

These materials enhance the quality of light from a lamp.

      .    Silica and Titania  (titanium dioxide) - Fine particu-
          late coatings are often used in incandescent lamps to
          "frost" the glass.   This  coating  reduces glare and
          increases the diffusion of light.
                            VIII-18

-------
            no        * -.TransParent  coatings  on  the  inside  and
           outside of the lamps  that produce  light  of various  colors

           Reflector Coatings -  Found usually in incandescent  lamps
           such as the parabolic reflector  lamps.   Coatings  of
           aluminum and silver are frequently used.

           Ceramic Coating - Pigments fused into the glass.  These
           provide permanence to the coated material.

           Tin Chloride - Used in low wattage-energy saving  lamps.
           The metallic coating  enhances electrical conductivity.

           Silicone Coat - An external coating to a finished lamp
           which prevents arcing from occurring  in  the presence
           of high humidity.

 Lamp Bases

 These are essential in securing a lamp to a  lighting fixture  and
 as an aid in transferring electric current from a power source
 to the electrodes within the lamp.  Lamp bases are commonly made
 of tin,  brass,  or plastic materials.

           Phenolic Resin Cement - Most lamps employ this
           material to attach the base to the lamp.

           Mechanical  Crimp - Some lamps of extremely high
           temperatures  use this technique to insure that the
           lamp  base  stays  securely fastened to the  lamp.

 Mandrels

 Tungsten  wire is  wound  on  mandrels of  molybdenum, steel, and
 copper-clad  steel.  The  mandrels are then removed by strong
 solutions  of hydrochloric  acid,  nitric  acid,  and sulfuric acid.

 Cleaning Solutions

Ammonium chloride  and hydrochloric acid are used to remove
copper oxide from  the lead wires on  miniature glow  lamps.   Quartz
lamps often have  silica  deposits on  the lamp  surface  from an
annealing  operation.  Hydrofluoric acid is  commonly employed to
remove this aesthetically undesirable material.

WATER USAGE

From the Department of Commerce  1972 Census of Manufactures,
gross water usage  is estimated to  be 13.6 billion liters/day for
the electric lamp products industry  as  described under  SIC 3641.
                        VIII-19

-------
Process water is approximately 6 percent of the gross or 816
million liters/day.  It is also estimated that 42 percent or 5.7
billion liters/day of the gross water usage is discharged.  No
estimates could be found of water usage within the  tungsten
filament manufacturing industry as described under  SIC  3699.
Observation of process operations at plants manufacturing electric
lamps and tungsten filaments revealed large differences in water
usage rates  from plant to plant.

Of the 5.7 billion liters/day of discharged water  from  electric
lamp manufacturing,  it is estimated that 7 percent  or 400 million
liters/day of the total discharged water is treated.  Treatment
technologies observed' at visited plants manufacturing electric
lamps, SIC 3641, and tungsten filaments, SIC 3699,  are  summarized
in Table 8-2.

PRODUCTION NORMALIZING PARAMETERS

Production normalizing parameters are used  to  relate  the pollu-
tant mass discharge  to the production level of a plant. Regu-
lations expressed  in terms of this production  normalizing parameter
are multiplied by  the value  of  this parameter  at each plant  to
determine the allowable pollutant mass  that can be discharged.
However, the following problems arise in defining  meaningful
production normalizing parameters for electric lamps:

          Size,  complexity and  other product  attributes affect
          the amount of pollution generated during manufacture
          of a unit.

          Differences  in manufacturing  processes  for the same
          product  result  in  differing amounts  of pollution.

          Lack of  applicable production records  may impede
          determination of production rates in terms of de-
          sired  normalizing  parameters.

Several  broad strategies  have been  developed  to  analyze applicable
production normalizing  parameters.   They are  as  follows:

          The process  approach  - In this approach, the pro-
          duction normalizing parameter is a direct measure of
          the production  rate for each  wastewater producing
          manufacturing operation.   These parameters may be
          expressed as  sq.  m. processed per hour,  kg.  of pro-
          duct  processed  per hour,  etc.  This approach requires
          knowledge of all the  wet processes used by a plant
          because the  allowable pollutant discharge rates for
          each  process are added to determine the allowable
          pollutant discharge rate for the plant.   Regulations
          based on the production normalizing parameter are
          multiplied by the value of the parameter for each
          process to determine allowable discharge rates from
           each  wastewater producing process.
                              VIII-20

-------
5-i
                       iHCM
               VOi-H CO    f-l
                     CM  in
                     in co m
                     CO t^ VO
               en a\ ff n ^
                      JJ
                      CO
                      3
                      •n

                      %
                                     &
                                    53
                     en
                     ID
                     o
                     CFV
                     01
   5
   o
   0)
                                     QJ   (U U
                                          •U  CO
                          I
CO
5    SS

slll
   •"  01 CO
     •H -rH
   <  O O
r- CN s a
                                                               4J
                                                               01
                                                               3
                                                               •I—I

                                                               s
                                                                    
                                                                                        3 3 3 3
                                                                                                   V|/ '

                                                                                        cL QJ QJQJa?'
                                                     3 S
                                                     O 4J
                (U (U
                     I
                                    6
                                                               
-------
          Concentration limit/flow guidance - This strategy
          limits effluent concentration.  It can be applied
          to an entire plant or to individual processes.  To
          avoid compliance by dilution, concentration limits
          are accompanied by flow guidelines.  The flow guide-
          lines, in turn, are expressed in terms of the pro-
          duction normalizing parameter to relate flow dis-
          charge to the production rate at the plant.

The electric lamp subcategory will be subdivided into two areas
for discussion of production normalizing parameters: electric
lamp manufacture and filament manufacture.  Because the manufac-
ture of these products differs considerably, each product has
its own production normalizing parameter.

Electric Lamp Manufacture

Fluorescent lamps and, to a limited  extent, other electric dis-
charge lamps use wet manufacturing processes requiring an ef-
fluent mass discharge limitation.  Potential candidates for pro-
duction normalizing parameters include: surface  area of product
processed, number of lamps processed, and amount of raw materials
consumed.  It has been determined that  surface area of product
processed is more closely associated with pollutant discharge  than
are the other potential parameters.

Area Processed - There is a direct relationship  between the sur-
face area processed and pollutant load  generated.  Wet processes
consisting of glass tube rinse,  tin  chloride coat, phosphor appli-
cation and silicone coat are all directly applied  to  the  glass
tube surface.  Thus, there  is  a  correlation  between  the surface
area processed and the pollutant discharge  from  wet processes.

Fluorescent lamp surface area  is easily calculated knowing  the
number of each glass tube size processed.   Most  fluorescent  lamps
are produced  in standard sizes for which  length  and  diameter  are
known.  The number of  lamps of each  type  produced  is  readily  avail-
able from production records.  Thus  the pollutant  load  generated
can be related directly  to  the total calculated  surface  area  pro-
cessed.

Some electric  discharge  lamps, namely mercury  lamps  with  quartz
envelopes which were manufactured  at one  plant that  was  visited,
use a wet process  that is directly  related  to  surface area pro-
cessed.  Finished  lamps  are given  a  hydrofluoric acid etch to
remove surface silica  deposits on  the lamp.   The entire  lamp is
submerged  in  the  acid  bath.   Lamp  surface area is  a known con-
stant for  each product type.   Knowing the surface  area per lamp
type and  the  production  rate  in  terms of the number of each type
of  lamp produced  yields  total  surface area  processed.
                              VIII-22

-------
  Number of  Lamps  Processed - This is the most readily available
  Rn?   So-" param*Jer obtainaKBB**rom lamf* manufacturing facilities.
  But,  because  of  the  variety of lamp sizes manufactured! the num-
  ber of lamps  produced cannot stand alone as a production related
  ?S£Jme!:e!:*i However'  in conjuction with the size of each lamp
  SoduoMon pr°C*ssed area is easily obtained and is a meaningful
  production normalizing parameter.
 f!^"5.^ RtW "aterials  Consumed  - All  fluorescent lamp manu-
 facturing planes  contacted  and" isited  use  similar raw materials
 a?di-?f°£:SS ch®mi?als-   Differences in  lamp manufacturing varies
 little from a basic  sequence  of process operations.   The unique
 feature of each plant's  manufacturing processes  is the phosphor
 sofuMon f°Hmulation' tin chloride  coating,  and silicone coating
 solution. Since most plants maintain that these  formulations,
 particularly phosphor coatings, are proprietary,  information
 regarding their composition and consumption is unobtainable
 Hence, raw material and  process chemical usage is  unavailable
 for use as a basis for effluent discharge limitations.

 Filament Manufacture

 Potential candidates for filament manufacturing production nor-
 malizing parameters include:  weight of mandrel dissolved? num-
 ber of filaments processed,  weight  of filaments processed, and
 amount of process chemicals  consumed.  The  weight  of mandrel
 dissolved is  the best production related parameter because of
 its close association with the mass of discharged  pollutants.


 Weight of Mandrel  Dissolved  - Coiled tungsten filaments are wound
 on  particular  types of  mandrels in accordance with their specific
 use in incandescent and  fluorescent lamps.   Filaments for differ-
 ent applications are wound on mandrels  made  of molybdenum, steel
 ??i f™PP?r~Clad "fteel.   Coiled, coiled-coil,  and triple coil tungsten
 filaments  are  all  wound  initially  on primary mandrels that are
 eventually dissolved in  strong acid. After  initial coiling,  fila-
 ments  to  become  coiled-coil  and triple  coil  filaments are re-
 wound  on  secondary mandrels  that do not  accompany the filament to
 iSllJ w?i££1Uti;n;i Inst*ad' these secondary mandrels are mechan-
 ically withdrawn following an  annealing  process.

 There  is a de terminable  length of  primary mandrel per unit lenqth
 Sf^i16*3!.?"198^11 filament-   In addition, each filament type
 dictates the mandrel material  needed, and the diameter of the  man-
 ArS dljta^e? fche  size of coiling.   The  length, diameter,  and  man-
 drel material used  result in a mandrel weight per filament type.
 Since pollution  from filament  manufacture results  directly from
mandrel dissolution, the  weight of  mandrel dissolved  becomes  the
                                parameter for Determining effluent
                              VIII-23

-------
Number of Filaments Processed - Because filament types vary with
mandrel material and diameter, there is no direct relationship
between number of filaments produced and  the pollutant mass dis-
charged.  The number of coiled filaments  of each type can  be
used, however, in calculating the  total number of mandrels used.
This can be used to calculate the  total weight of mandrel  dis-
solved per number of coiled filaments produced.  However,  the
weight of mandrel material used can be obtained more directly
from purchasing records.

Weight of Filament Processed - This production parameter  is not
applicable becausedifferent coiled filament  types may have a
different number of coiled turns per length of mandrel used.
This results  in filament  weights that are independent of  mandrel
size and weight.  Thus, there can  be varying  filament weights  for
the same size and type  of mandrel  and varying  filament weights  for
the same pollutant mass discharge. Therefore,  there  is  a
characteristic pollutant  discharge relative  to  the  type  and
diameter of mandrel material  that  is not  related  to  the  weight
of filament processed.

Amounts of Process CheriFicals  Consumed  -  Different mandrel materials
require dissolution processes  that employ various types  of acids
at varying concentrations and  consumption rates.   This  results
in a non-uniform  pollutant  discharge  characteristic which
discounts  this parameter  as  a basis for  effluent discharge
limitations.

Summary of Production Normalizing  Parameters^

In  summary,  the  production normalizing.parameters for the elec-
tric  lamp  subcategory are as follows:
      Product

 Fluorescent Lamps

 Quartz envelope
   mercury discharge
   lamps

 Filament Manufac-
   ture
Production Normalizing
	Parameter	

glass tube surface area

envelope surface area
weight of mandrel  dis-
  solved
  Units
 of Mass
Discharge

  mg/sq m

  mg/sq m



  mg/kg
 WASTE CHARACTERIZATION AND TREATMENT  IN  PLACE

 This section presents the sources  of  waste  in  the  electric
 lamp subcategory and sampling  results for this wastewater.   The
 in-place waste  treatment systems are  discussed and treated
 effluent sample data from these systems  presented.
                             VIII-24

-------
 Process Descriptions and Water Use

 There are eight wet processes used by the electric lamp industry.
 These wet processes are:

    Glass Tube Rinse
    Tin Chloride Scrubber
    Sulfur Dioxide Scrubber
    Glass Tube Brush Scrub or Sponge Wipe
    Silicone Coating
    Quartz Envelope Cleaning and Subsequent Water Rinsing
 .   Mandrel Dissolution,  Filament Neutralization, Acid Cleaning,
    and Subsequent Water  Rinsing
    Lead Wire Cleaning

 Of  these wet processes,  only seven are unique to the electric
 lamp  industry,  because lead wire cleaning is covered in the Metal
 Finishing Category.

 Wastewater producing processes depend upon product type, pro-
 duction rate,  and size of facility,  as well as on the variation
 in  technological  advancement and degree of automation.   The
 electric lamp  manufacturing processes that use water in their
 operations are  described below..

 There  are four  electric  lamp product areas.   Three of the  product
 areas  consist  of  electric lamp types and include:   incandescent,
 electric discharge  other than fluorescent, and fluorescent lamps.
 The fourth product  area  is  tungsten  filament manufacture.   In-
 candescent lamp manufacture is a dry process.   In general,  elec-
 tric discharge  lamp  manufacture  of other than fluorescent  lamps
 also requires  no  process water usage.   However,  there are  a few
 low volume cleaning  operations of quartz envelopes that encapsu-
 late mercury vapor  lamps.   Fluorescent lamp  manufacture utilizes
wet processes which  include:  glass tube  rinse,  tin chloride
scrubber,  sulfur  dioxide scrubber, glass tube  brush scrubbing,
and silicone coating.  Tungsten  filament manufacture  uses  process
water  for  rinsing after  mandrel  dissolution,  filament neutralization,
and acid  cleaning,  in addition to wet  air scrubbing.

Table  8-3  presents product  type,  wastewater  producing processes,
volume of  water used, and number of  production  employees for  those
plants visited within the industry.  Process  descriptions  for
each of  those manufacturing  operations requiring  water  usage  are
presented  in the  following  subsections.

Glass Tube Rinse - This  process  is associated with  fluorescent
lamp manufacturing.  Glass  tubing  in straight  length  and circu-
lar forms  is rinsed  to remove  any  excess  dust or  silica  impuri-
ties from  the surface of  the glass.  These impurities may weaken
the bond of phosphors to  the wall  of the  glass  tube.
                               VIII-25

-------
                       2ro   I
                     _, % 21   .     i
                     30-51   '     '



                     'Q OT •«•<
                              I     I
                        IJ.
                                                                in ft


                                                                rH rH
                                                                 I        I
                                                                         II       I
                                                                              m
                                                                              in
                                                                              o
                                                                                                          i      l
co Q i
**
                     a*j
                  rH £ 10
                  S 88
                              tMJO    33   _ 01
                                          &
                                          Q
                SgSu
                33£3
                              V0\    I   I      I


                                    \O

                                t  a.
                            4J    JJ    4J
                            c    c    c
                                    Cu i4  &4 i
                                                                           II        I        I      I     I      I
                                                I        III       II
                                                                                                       I     I     I
                                                                           II        I        I
                                                                                                                  to
                                                                                                                  •H
                                                                                                                  e
                                                                                  [1       D»       O «

                                                                                  iA     IA     If  8    8
                                                                                   •H      -H       J  -H    rd

                                                                                                                   i JJ
                                                                                                                    C
                                                                                                 S
                                               f
-------
The visited plants  use hot deionized water  spray  rinses.  Glass
tubing  is held  in a vertical position  by  a  spring-clip  mechanism
and sent through an automated  spray rinse.  The rinse water  is
sprayed down through  the  tubing  and collected  in  a  holding basin
below.  At Plant 33189, all rinse water is  deionized and  returned
to the  spray rinse  at a flow rate of 36,336 I/day (9,600  gpd).
At Plant 28126  rinse  water is  discharged  to a  storm sewer which
flows to a nearby creek at a flow rate of 3,789 I/day  (1,000  gpd).

Plant 19121 employs a similar  automated hot water spray rinse.
The glass tubing, however, is  held in  a vertical  position by  a
rack assembly from  above  and below.  In the subsequent  phosphor
application process,  phosphor  coating  solution is gravity fed
through the tubing  and collected in a  holding  basin below.
As a result, the lower rack also receives the  water-based phosphor
coating.  This  coating is removed from the  rack when the  rack
returns to the  glass  tube rinsing process.  The rinse water  is
sprayed down through  the  glass tubing, cleaning the glass of
dust and silica and the racks  of phosphor coating material.   The
rinse water flows to  a 2,044 liter (540 gallon) settling  tank,
the phosphors are recovered, and the remaining wastewater flows
to the sanitary sewer at  a rate  of 93,141 I/day (24,608 gpd).
Plant 19121 uses much more water than  the other two plants pre-
viously discussed because a larger volume of rinse  water  is re-
quired to remove and  recover phosphor  materials from the  racks
that contain the glass tubes.

Tin Chloride Wet Scrubber - Energy saving fluorescent lamps re-
ceive a tin chloride  coating prior to  phosphor application and
after glass tube rinsing.  The tin chloride solution is applied
as a spray coating  and is continually  recirculated  through a
holding basin.  At  Plant  19121,  the tin chloride  vapors are ex-
hausted through a wet air scrubber.  Scrubber  water is  sent to
pH adjustment at a  flow rate of  29,069 I/day (7,680 gpd)  before
being discharged to the sanitary sewer.

Plant 33189, using  a  similar coating process,  has very  little
process water discharge.  Wastewater from the  wet air scrubber
is sent to a pH adjustment tank  at a flow rate of 163,512 I/day
(43,200 gpd).   The  pH is  adjusted with sodium  hydroxide to a
level of 10-12, precipitating  tin hydroxide out of  solution.  The
decant is recirculated back to the wet air  scrubber, and  the
settled material is contractor removed weekly.  In  addition,
weekly maintenance  of this system discharges approximately 379
liters  (100 gallons)  or less of  wastewater  to  a municipal treat-
ment system.
                            VIII-27

-------
Sulfur Dioxide Scrubber - Sulfur dioxide is used as a lubricant
in the automated process of glass flare manufacturing.  A glass
flare seals the mount assembly to the inner rim of the glass
tubing.  A small diameter glass tube is heated with a natural
gas flame and lubricated with small quantities of sulfur dioxide
introduced in the gas flame.  The tube is then slowly forced
over a die, forming a funnel-shaped glass flare.  Two visited
plants use such a small amount of sulfur dioxide that no wet
air scrubber is required.

However, a third facility, Plant 19121, uses sulfur dioxide in
quantities necessitating a wet air scrubber.  The sulfur dioxide
fumes are exhausted through the scrubber and the wastewater flows
to a pH adjustment tank before being discharged to a municipal
treatment system.  Approximately 36,336 I/day (9,600 gpd) of
water are used by this facility in the manufacturing of glass
flares.  Because this fume scrubbing process of .glass flare
manufacturing is believed to occur only at this plant, no
effluent discharge limitation is recommended for this process.

Glass Tube Brush Scrub and Sponge Wipe - All plants that were
visited during this study that manufacture fluorescent lamps
employ a highly automated phosphor application process in which
the phosphor materials are prepared as solvent-based or water-
based solutions.  Both types of phosphor coating solutions are
gravity fed through glass tubes held in a vertical position.  As
the coating materials drip off the lower end of the tube, phos-
phors accumulate around the inner and outer rim of the tube.
After the phosphors are dried, but prior to baking, the lower ends
of the glass tubes are brush scrubbed or sponge wiped to remove
the excess phosphor material.  One plant applies a solvent
based phosphor coating and uses a dry mechanical brush scrub.
Because of its solvent base, the dried phosphor is very hard and
can be removed only by an abrasive brush scrub.  As the material
is removed, the hardened pieces fall into a series of pans.  The
removed phosphors are dissolved in a solvent and sent to the
phosphor application area for reuse.

Two plants were visited in which water based phosphor coatings
are applied.  At Plant 19121, the phosphor material is removed
by a dry mechanical brush scrub as a fine dust, which is removed
by a vacuum exhaust dust collector.  The other facility, Plant
33189, utilizes a water based phosphor application and employs
a mechanical sponge wipe accompanied by a water spray rinse.
The rinse dissolves the phosphors, which drop into a settling
tank, below.  The phosphors are recovered by gravitational settling,
and the water is recycled.  This plant has achieved zero discharge.
All water is recirculated at a rate of 1817 I/day  (480 gpd).
                           VIII-28

-------
 Process  operations  for  glass  tube  brush scrubbing or sponge
 wiping are  either dry or  use  a low water rinse flow rate.   At
 the  plant using  a wet process, zero discharge has been achieved
 through  settling and  total  recycle.

 Silicone Coat  -  All fluorescent lamps  receive a final silicone
 coating  prior  to being  aged and tested.   This coating is  applied
 to the outer surface of the finished lamp as  a dip coat or as a
 roll coat.  At two  of the visited  plants the  silicone coating
 solution is never discharged.   Solution is added to make  up
 the  amount  consumed in  the  coating operation.

 Plant 33189 discharges  76 I/month  of silicone coating solution
 from roll coating.  This  is done to clean the coating solution
 trough of any  particulate matter that  may have fallen into the
 solution or been dragged  in by the lamp itself.

 Plant 19121 employs a dip coating  operation in which the  lamp
 travels  along  a  conveyor  and  through the coating solution.   In
 this process the coating  solution  is continually added to  the
 coating  basin  and overflows at a rate  of 242  I/day (64 gpd).

 Quartz Envelope  Lamp Cleaning  - Cleaning of quartz envelope
 mercury  discharge lamps was observed at only  one facility,
 Plant 28086.   During an annealing  process, silica deposits
 develop  on  the surface  of the  quartz tube.  The  lamps are  dipped
 into a 70% hydrofluoric acid bath  to remove the  undesirable de-
 posits.  Several rinses follow the acid bath.

 This  is  a relatively low  volume operation in  which the rinse
 wastewater contains primarily  silica and fluorides at a flow
 rate  of  1817 I/day  (480 gpd).   At  this  particular facility,  the
 process  water  flow  rate is  independent  of production rate  be-
 cause the rinses continually overflow  regardless of the number
 of lamps cleaned.   Rinse  water flow rates can be controlled
 and  reduced significantly by not allowing the rinses to con-
 tinuously overflow  during periods  of lamp cleaning inactivity.

 Mandrel  Dissolution - Coiled tungsten  filaments,  wound on  mandrels
 of molybdenum, steel, and copper-clad  steel,  are dissolved  in
 very  strong solutions of  sulfuric-nitric acid or hydrochloric
 acid.  Mandrel dissolution  is  usually  a manual operation which
 commonly occurs  in  small  (57-76 liter)  tanks  or  in 2 liter  bea-
 kers.  Frequently,  mandrel  dissolution  is followed by a canister
 dip  to insure no further  acid  etching of the  tungsten filament.
 In addition, one plant, 28086,  uses a centrifuge for molybdenum
mandrel  dissolution processes.   All filament  manufacturing
 employs wet mandrel dissolution processes.  Most process water
 is used  for rinsing after dissolution,  filament  neutralization,
 cleaning processes, and for wet air scrubbing of acid fumes.
With  the exception  of one plant employing metal  recovery,  all
plants pH adjusted  their  raw wastewater  before discharging  to a
municipal treatment system.
                           VIII-29

-------
Total process water usage for rinsing and wet  air  scrubbing  at
visited plants ranges from 11,567 I/day  (3,056 gpd)  to  127,055
I/day (33,568 gpd), depending mainly upon the  number of scrubbers
per plant, the efficiency of each scrubber, and  the  size of  the
mandrel dissolution process.  Plant 33202 uses the most process
water.  It employs an automated system,  has a  high production
rate, and has several wet air scrubbers  discharging  water.
Plant 28077 uses the least process water, employs  a  manual
operation, has a lower production rate,  and has  one  wet air
scrubber discharging water.

Wastewater Analysis Data

Wet processes from electric lamp manufacturing processes were
sampled at five facilities.  Samples were analyzed for  parameters
identified on the list of 129 toxic pollutants,  non-toxic pol-
lutant metals, and other pollutant parameters  presented in
Table 8-4.

Tables 8-5 through 8-9 present analysis  data of  process waste-
waters and final discharged effluents for those  plants  sampled
within the electric lamp subcategory.  This table  presents pollu-
tant parameters, concentrations, and mass loadings of the processes
sampled.  Pollutant parameters are grouped according to toxic
pollutant organics, toxic pollutant metals, non-toxic pollutant
metals, and other pollutant parameters.  Summation of pollutant
concentrations greater than the minimum  detectable limit is  pre-
sented as well as mass loadings of those pollutant parameters
whose concentrations were measurable.  Mass loadings were derived
by multiplying concentration by the flow rate  and  the hours  per
day that a particular process is operated.  Some entries were
left blank for one of the following reasons:   the  parameter  was
not detected; the concentration used for the kg/day  calculation
is less than the lower quantifiable limits or  not  quantifiable.
The kg/day is not included in totals for calcium,  magnesium, and
sodium.'  The kg/day is not applicable to pH.   Totals do not  in-
clude values preceded by "less than".

Toxic pollutant organics, toxic pollutant metals,  and non-toxic
pollutant metals were detected at measurable levels  as  well  as
at levels below the quantitative limit.  Other pollutant para-
meters are all reported in measurable quantities.  The  following
conventions were followed in presenting  the data.

     Trace Levels - Pollutants detected  at levels  too low to
     be quantitatively measured are reported as  the  value
     preceded by a less than sign (<).   All other  pollutants
     are reported as the measured value.
                            VHI-30

-------
                                             TABLE 8-4
                                   POLLUTANT PARAMETERS ANALYZED
TOXIC POLLUTANT ORGANICS

 1.  Acenaphthene                               46.
 2.  Acrolein                                   47.
 3.  Acrylonitrile                              48.
 4.  Benzene                                    49.
 5.  Benzidine                                  50.
 6.  Carton Tetrachloride(Tetrachloromethane)   51.
 7.  Chlorobenzene                              52.
 8.  1,2,4-Trichlorobenzene                     53.
 9.  Hexachlorobenzene                          54.
10.  1,2-Dichlorethane                          55.
11.  1,1,1-Trichloroethene                      56.
12.  Hexachloroethane                           57.
13.  1,1-Dichloroethane                         58.
14.  1,1,2-Trichloroethane                      59.
15.  1,1,2,2-Tetrachloroethane                  60.
16.  Chloroethane                               61.
17.  Bis(Chloromethyl)Ether                     62.
18.  Bis(2-Oiloroethyl)Ether                    63.
19.  2-Chloroethyl Vinyl Ether(Mixed)           64.
20.  2-Chloronaphthalene                        65.
21.  2,4,6-Trichlorophenol                      66.
22.  Parachlorometa Cresol                      67.
23.  Ghloroform(Trichloromethane)               68.
24.  2-Chlorophenol                             69.
25.  1,2-Dichlorobenzene                        70.
26.  1,3-Dichlorobenzene                        71.
27.  1,4-Dichlorobenzene                        72.
28.  3,3'-Dichlorobenzidine                     73.
29.  1,1-Dichloroethylene                       74.
30.  1,2-Trans-Dichloroethylene                 75.
31.  2.4-Dichlorophenol                         76.
32.  1,2-Dichloropropane                        77.
33.  l,2-Dichloropropylene(l,3-Dichloropropene) 78.
34.  2,4-Dimethylphenol                         79.
35.  2,4-Dinitrotoluene                         80.
36.  2,6-Dinitrotoluene                         81.
37.  1,2-Diphenylhyclrazine                      82.
38.  Ethylbenzene                               83.
39.  Fluoranthene                               84.
40.  4-Chlorophenyl Phenyl Ether                85.
41.  4-Bromophenyl Phenyl Ether                 86.
42.  Bis(2-Chloroisopropyl)Ether                87.
43.  Bis(2-Chloroethoxy)Methane                 88.
44.  Methylene Chloride(Dichloromethane)        89.
45.  Methyl Chloride(Chloromethane)             90.
Methylbromide (Bromonethane)
Bromoform (Tribrpmcmethane)
Dichlorobromomethane
Trichlorofluoromethane
Dichlorodifluoronethane
Chlorodibromcxnethane
Hexachlorobutadiene
Hexachlorocyclopentadiene
Isophorone
Naphthalene
Nitrobenzene
2-Nitrophenol
4-Nitrophenol
2,4-Dinitrophenol
4,6-Dinitro-o-cresol
N-Nitrosodimethylamine
N-Nitrosodiphenylamine
N-Nitrosod i-N-Propylamine
Pentachlorophenol
Phenol
Bis(2-Ethylhexyl)Phthalate
Butyl Benzyl Phthalate
Di-N-Butyl Phthalate
Di-N-Cctyl Phthalate
Diethyl Phthalate
Dimethyl Phthalate
1,2-Benzanthracene(Benzo(A) Anthracene)
Benzo(A)Pyrene (3,4-Benzo-Pyrene)
3,4-Benzofluoranthene(Benzo (B)Fluoranthene)
11,12-Benzofluoranthene(Benzo(K)Fluoranthene)
Chrysene
Acenaphthylene
Anthracene
1,12-Benzoperylene(Benzo(C3JI)-Perylene)
Fluorene                                 ,
Phenanthrene
1,2,5,6-Dibenzanthracene(Dibenzo(A ,H)Anthracene
Indeno(1,2,3-CD)Pyrene(2,3-o-PhenyleneFyrene)
Pyrene
Tetrachloroethylene
Toluene
Trichloroethylene
Vinyl Chloride (Chloroethylene)
Aldrin
Dieldrin
                                              VIII-31

-------
                                          TABLE 8-4 Con't
 91.  Chlordane(TechnicalMixtureandMetabolites)
 92.  4,4'-DDT
 93.  4,4I-DDE(P,P'-DDX)
 94.  4,4I-DDD(P,P'-TOE)
 95.  Alpha-Endosulfan
 96.  Beta-Endosulfan
 97.  Endosulfan Sulfate
 98.  Endrin
 99.  Endrin Aldehyde
100.  Heptachlor
101.  IfeptachlorEpoxide(B!K-Hexachlorocyclo-
        hexane)
102.  Alpha-BHC
103.  Beta-BHC
104.  Ganma-BHC(Lindane)
105.  Delta-BHC(PCB-Polychlorinated Biphenyls)
106.  PCB-1242(Arochlor 1242)
107.  PCB-1254(ftrochlor 1254)
108.  PCB-1221(Arochlor 1221)
109.  PCB-1332(Arochlor 1232)
110.  PCB-1248(Arochlor 1248)
111.  PCB-1260(Arochlor 1260)
112.  PCB-1016(Arochlor 1016)
113.  Toxaphene
114.  Antimony
115.  Arsenic
117.  Beryllium
118.  Cadmium
119.  Chromium
120.  Copper
121.  Cyanide
122.  Lead
123.  Marcury

124.  Nickel
125.  Selenium
126.  Silver
127.  Thallium
128.  Zinc
129.  2,3,7,8-Ttetrachlorodibenzo-P-Dioxin(TCDD)
NON TOXIC POLLUTANT METALS

Calcium
Magnesium
Aluminum
Manganese
Vanadium
Boron
Barium
Molybdenum
Tin
Yttrium
Cobalt
Iron
Titanium
Potassium
Gallium
Uranium

OTHER POLLUTANTS

Oil & Grease
Total Organic Carbon
Biochemical Oxygen Demand
Total Suspended solids
Phenols
Fluoride
Xylenes
Alkyl Epoxides
Germanium
Rubidium
Strontium
Zirconium
Niobium
Palladium
Indium
Tellurium
Cesium
Tantalum
Tungsten
Osmium
Platinum
Gold
Bismuth
                                           VIII-32

-------
O
O
  in
rH O
O O
O O
o
rH
O

O
o
rH
O
 •
O
vo

o
o
       rH O O
       M rH rH
       O O O

       000

            ,V
   rH    O *3" CN m   VO
   O    OOrHO   r-l
   o    oooo   o
                                     OOOT
                                     oooo
                                                                             oooo
               o o o
               I—I rH I-H
               o o o

               o o o

               V V V
o r^
rH VO
o o

o o

V
OOOOOCMrHorOOOOOm

OOOOOOOOOOCDOOO

V   V           V   V
                       VIII-33

-------
§B§8
*!|B
    ;~  &
  12    *
          i:
glLsgislHlgisl
OOmOOOOOrHOOOOO
                                                           o
                                                     o  o  o
                                                                      gs
                             «-!*Or*»'«?r»i-*»HVOiHr-HlO  *C P) ID f«l O O *O

                             vo-c-oeNouaooo^ocnoooooooobrHCo'oo
     ^ v, ^ , , ^ ^ u, v^ vw ,^ ^-  ^ r-i w. W VN -4-  
-------
                            s
                            o
        s
        o
        o
           r—
           o
           o
           o
      r-i ro
      O O CO CN f)   VO

      OOCMTO   O
      OOf-HOO   O
                                       r*»       in
                                       O CN CN rr
                                       O O O 00
                                       OOOrH
                                                                                             o o o o o
in CN
CO 00

   00
                      o
                      r-i
                      o
                        •
                      o
s.

o
•»
o
 •
o
s.

•H O

O O
O O O O O

o o o o o
                                    o o

                                       V
                 o o o o o

                 V V V V V
o o
fH i-l
o o
 •  •
o o


V V
10
o
                         o uvr* vo m
OOOOOVO
-------
                                      oCOO(MOOOOOOCDrHOinOo"    O O *T      rHTOOmOOOO*

                      ^         W   v^vv   vvv    v    w    wS      ""*      """g








                   tr       in       01                                            iH
o TT   ovom^OrHCMomooom         PH         vo    q%      en      u>
iDmtOrHOOOoatooor^ooo         o         rn    o      rH      *q>
rHOCMt-HOOOOOOOOtnOGO         O         O    «T      O      rH

0* O U3 O* 0* O O* O-T 0* O O O O O         O         O    O      O      VO

      3











orH   r-p*niinooarjo ^H ^ O ^3*   rH VO ^ CM rH rH O t**       ^ Irt CO tO O) GO


 >lTiOOOOOOrHOOOOOrHOOOOOOOrHOVOOOOOOC>!      rH O
 1    O                                                       . f                  rH      rH f)
      r^                               vvvvvvvv>/vvv'
      CN
                                                                   VIII-36

-------
                                                         §«H   VO
                                                         i-t   CM
                                                       o o   o
o
rH
o
 •
o
m


H r~
o o
 • *
o o

V
  gogi
_ •» o
• rtOOOOMOOOOO
» ^5 O l> f-H O rH m f* f—I T-I
> Q tV Q i-( <-H i-l f-l o O ^C
                                                  C3 O O O O O O O O O CJ C3 «3 O
                                                  ^|0€^i€3^i
                                                  ^mr«ooo>otMc»i«»mvot~eo
                                                  >Hi-liHrHi-«C>l(>l
-------
IT t
 3   > 8
IE   s -S
             m  m r* -!r>ooooc>oo>
                                      v  v v v v oe
                                     CO
                                     I
                                     o
  111
            m
                        §5 2  •*% '2 H .3
                      .JfjiHISiii
                          friSOM««
                                                        [3
                                                  5.IIS i
                                                               g
                                                               g
                                                             1    i
                                                             )  (U  4J
                                                             1 01 <&  O
                                                              •S1?  2
                         VIII-38

-------
I
00
II
                                                       CM          in   vo      ro
                                                       O CM        O   O rH    TJ-

                                                       oocoi-^incoocAoo    r-»
                                                       OOOrHi—ItJ-OnOO  i-H CM
                                                       OOOOOOOOOO  O rH
                                                       OOOOOOOOOO  OO


                                                       OOOOOOOOOO  OO
                                                                  in
                                                         n        o     
-------
IS
   :3   s
    §   ;
  *rj «j in u>
  l>sa
ciSs0"
»H S
ce a
              00

              II
     U    S
                      p* ^* c\  N cb \o o  in o co CT» o
                      C>iQ.-HOOO00040002O
                        §ooroooooo\ooooo
                        OOOOOOOrHOOOOO

                      OOOOOOOOC4OOOOO
                                             j tn o

                                       ) C3 O O -V O
  Ji WJ ^ in    "
,-t (O 4J OrH    rH
                        SO m 00 O C4 rH <
                        o o vn o o o <
                      O O O O O O O <
                                            §O If) <
                                            O cH <
                                         > O O O <
         8-    -
                        So vo m co o in 01   CM m •» ^j p
                        co u? vo CN m I-H in   ro •-< <«r o vo
                      n in o co c>i en i*- o   en o ro « o
                      rnotN^roooooooocno
                                                VIII-40

-------
                           i-l    CM
                           O    O

                           O    O
                        o in    CM
                        i-l i-H    CM
                        o o    o
                         •  •     •
                        o o    o

                        V
r-
o
o
                                        ffl
o
CO
o
     in
     i-t
     o
       •
     o
03 CQ £Q


O   O
•-»   r-
O   rH

O   O

V
O (N
O O
                       S^3*
                  vo   o   in oo
O   OIDrHr-
-------
It
                                                                 in in
                                                                 f\ *-*
 as

  1
 Q Q
I
!
    I
       I

       8
       R
       41
   '§  fifi
   .•3  S*
             rHOODOOOOOCIOOOfHO
                                                              O  rt 1-1,-J
   i  I  s
   I  W  *^s

   il'^ol
    Isle

   ifPl
   if^sl
   ) U Cu U O
I-H N in o
•H  O
   
-------
                              s
                              o
                                                                 r-
                                                                 o in
                                                                 o o
                                                                 o p
                                m vo
                                g o
                                o o o o
                                O o o o
                                 • •  •  •
                                p p o o
                                                                                        r-. vo
                                                                                        P rH
                                                                                        O O
CO

 I
ff
3
                 o o
                 rH rH
                 O O
                  •  •
                 O O

                 v v
                                      tc
                                      o
 q o o o o
 >H i-« l-t rH i-H
 O O O O O

 O O O C9 O

 V V V V V
rH •«»•

O P

do
                                                              PPPPOPPOPPOOrHCM

                                                              PPPPOOOOOPOOPP

                                                              V V V          V V V   V
                                                                 CO
                                                                 o
                                                                                M
                                                                                vo
                                                                                o
                                    r* in o
                                    i-l O O
                                    o o o
                                     • • •
                                    o o o
                                                                                             a\
                                                                                             p
                                                                                          O ^H
                                                                                           •  •
                                                                                          O O
                       P
                       rH
                       P
                        •

                       P
                                     00
                                     iH rH
                                     P P
                                      • *

                                     O O

                                     V V
O O O O  OP
•-I i-l l-t r-t  rH i-l
O O O O  OP
                                       p p p p

                                       \/ V V V
          pp

          V V
                                                                                          .
                                                              OOPPVDPrHPOOOOOrHCl

                                                              POOPPOPpOOOP. OrH

                                                                \/ \/   V       V V V V
                                                                 vo
                                                                 s
                                                                    r-

                                                                    p

                                                                    p
                                                                                   rH P
                                                                                   P P
                                                  TT Ol
                                                  rH OJ
                                                  P rH
                                                                                        -
                                                                       flOrHOPOOOPrHm

                                                                PPPPPPOOPPPPPrH

                                                                   VV   V     VVVVV
                  •H rH S rH

              0 e (•Hp-HrtrHoB'irffi
             •2. a 1? s ? ? £"3 S -g 5
              5'§rti5,5AS-65l1a „ „  .
             I I ^rH-6 -TrH* £ g 6 H fi ti ^
                                        VIII-43

-------
r
                                                                        V0 O O O


                                                                        C\J O O O
                                                                                                                                                  r
                                                                                                                                                  o ^
                                                                                                                                                - o n
                                                    -•^mooooooooooo

                                                    '    §             v"
                                               8,
tnocoi-toooo   oooo

C4OOOOOOO   OOOO
                                                                                                                                           r-i in r*~ o o
                                      CO   U9
                                      in   i-«
                                                                        co n o co
                                                                        O O O r-4
                                                                        o o o o
                                                   rH O O O O O O O   OOOO
                                                                    rt O O O O

                                                    r^OCNOOOOOOOOOOO
                                                                                 VIII-44

-------
      Mass Load - Total daily discharge in kilograms/day of a
      particular pollutant is termed the mass load.  This figure
      is computed by multiplying the measured concentration (mg/1)
      by the water discharge rate expressed in liters, per day.

      Sample Blanks - Blank samples of organic-free distilled
      water were placed adjacent to sampling points to detect
      airborne contamination of water samples.  These sample
      blank data are not subtracted from the analysis results,
      but, rather, are shown as a (B) next !to the pollutant
      found in both the sample and the blank.

 The  manufacture of electric lamps occurs alt ten visited plants,
 five of which were sampled.  Raw waste stream samples were taken
 of process wastewaters including five of the eight wet processes
 listed  in Table 8-3.

 Tungsten Filaments - Four plants manufacturing tungsten fila-
 ments were visited and sampled.   Tables 8-5 through 8-8 present
 the  analyses  of raw waste and effluent discharge streams for
 process water usage associated with filament mandrel dissolution.

 Quartz  Mercury Vapor Lamps - In  addition to filament manufacture,
 Table 8-8 presents a raw waste sample of hydrofluoric acid clean-
 ing  of  quartz mercury vapor lamps.

 Fluorescent Lamps  - Three plants manufacturing fluorescent lamps
 were  visited  of which one was sampled.   Table  8-9  presents the
 analyses  of raw waste and effluent  discharge streams for process
 water usage associated with  fluorescent lamp manufacturing.

 Summary of Raw Waste Stream Data

 Tables  8-10 and  8-11 summarize measurable  pollutant concentration
 data  of raw waste  streams sampled for the  electric lamp subcategory,
 Minimum,  maximum,  mean,  and  flow weighted  mean  concentrations
 have  been determined for the  summarized raw waste  streams.   The
 flow  weighted  mean concentration was  calculated  by dividing  the
 total mass rates  (mg/day)  by  the total  flow rate (I/day)  for   '
all sampled data for each parameter.   Pollutant' parameters
listed  in Tables 8-10  and 8-11 were  selected based upon their
occurrence and concentration  in  the  sampled  streams.  Those
parameters either  not  detected or detected  at trace  levels  in
all sampled streams  were  excluded from  these tables.
                               VIII-45

-------
                                           TABLE 8-10

                                  Summary of Raw Waste Data For
                                 Tungsten Filament Manufacturing
Toxic Organics

 23  Chloroform
 44  Methylene Chloride
 48  Dichlorobroroomethane

Toxic Metals

135  Arsenic
117  Beryllium
118  Cadmium
119  Chromium
120  Copper
122  Lead
124  Nickel
125  Selenium
126  Silver
127  Thallium
128  Zinc

NorHIbxic Metals

     Aluminum
     Manganese
     Vanadium
     Boron
     Barium
     Molybdenum
     Tin
     Yttrium
     Cobalt
     Iron
     Titanium
     Strontium
     Zirconium
     Niobium
     Palladium
     Indium
     Tungsten
     Gold*
     Uranium
   Minimum         Maximum         Mean
Concentration   Concentration   Concentration
     mg/1            mg/1            mg/1
   0.012
   0.021
   NO
  <0.005
  <0.001
   0.012
  <0.031
   0.208
  <0.070
  <0.103
  <0.003
   0.014
   0.065
  <0.010
 0.621
 0.270
 0.067
 0.234
 0.007
21.661
 0.051
 0.026
 0.061
13.421
 0.005
 0.082
<0.020
 0.040
<0.016
 1.64
 0.66
 0.400
 0.03
 0.040
 0.063
 0.010
<0.040
<0.010
 0.090
11.030
 3.600
 0.290
 0.500
 0.110
<0.130
 0.170
 0.160
                   2.230
                   0.426
                   1.040
                   0.809
                   0.040
                 678.
                  <0.515
                   0.072
                  <1.030
                 127.
                  <0.041
                   0.350
                   0.400
                   1.70
                   0.300
                   2.73
                   7.00
                   0.400
                  <0.300
0.029
0.035
0.003
0.022
0.004
0.044
3.712
1.347
0.175
0.302
0.039
0.068
0.102
0.077
                 1.550
                 0.354
                 0.396
                 0.474
                 0.019
               258.5
                 0.215
                 0.043
                 0.397
                66.45
                 0.019
                 0.198
                 0.157
                 0.61
                 0.125
                 2.07
                 4.32
                 0.400
                 0.133
                                                Flow Weighted
                                             Mean Concentration
                                                  mg/1

                                                0.024
                                                0.048
                                                0.003
                                                0.032
                                                0.007
                                                0.058
                                                0.714
                                                0.420
                                                0.110
                                                0.184
                                                0.075
                                                0.097
                                                0.073
                                                0.032
                1.764
                0.373
                0.714
                0.620
                0.010
              462.6
                0.362
                0.055
                0.709
               91.77
                0.028
                0.263
                0.270
                1.15
                0.202
                2.42
                5.17
                0.400
                0.214
                                                 V1II-46

-------
                                        TABLE 8-10 CON'T

                                   Summary of Raw Waste Data For
                                 Tungsten Filament: Manufacturing
Other Pollutants

121   Cyanide, Total               NO
      Total Organic Carbon        13
      Biochemical Oxygen Demand   30**
      Total Suspended Solids       1.0
      Phenols                      0.008
      Fluoride                     ND
                                  Minimum        Maximum         Mean            Flow tfeighted
                               Concentration   Concentration   Concentration   Mean Concentration
                                   mg/1             mg/1            mg/1
  0.010
188
 30**
660
  0.025
  0.540
  0.005
101
 30**
301
  0.017
  0.270
  0.002
156
 30**
110
  0.017
  0.095
 * 3 Single Stream Sample Value.
** = Toxic Response.  Value May Be As High As That Which is Indicated.
ND = Mot Detected
                                                VJII-47

-------
                                            TABLE 8-11
                                   Summary of Raw Waste Data
                                  Fluorescent Lamp Manufacturing
Stream Identification

Sample Number
Plow Rate - Liter/Day
   SO, Scrubber,
SnCl  Scrubber, and
   Sllicone Coat
    03749-85310
      65648
  Developed
SnCl. Scrubber
    29069
Glass Tube &
 Rack Rinse

 03750-85308
   93136
  Developed
Summary Process
     Waste
   122205
Toxic Organics

 44  Methlene chloride
 86  Tbluene

Toxic Metals

114  antimony
118  Cadmium
119  Chromium
120  Copper
122  Lead
126  Silver
128  Zinc

Non-Toxic Metals

     Aluminum
     Manganese
     Vanadium
     Boron
     Barium
     Tin
     Yttrium
     Cobalt
     Iron
  Concentration*
       rag/1

       0.063
       0.011
      <0.005
       0.005
       0.009
       0.112
       0.022
       0.005
       0.113
       0.143
       0.012
       0.035
       0.278
       0.025
      40.859
       0.010
       0.055
       0.200
Flow Weighted**
     Mean
Concentration   Concentration*
     mg/1            mg/1
      NC
      NC
    0.011
    0.020
    0.253
    0.050
    0.011
    0.255
    0.323
    0.027
    0.079
    0.628
    0.058
   92.273
    0.023
    0.011
    0.452
    NA
    NA
    0.597
    0.399
   <0.008
    0.148
    0.022
   <0.005
    0.146
    0.619
    0.445
    0.009
    0.064
    0.121
    0.033
    0.033
    0.003
    0.193
                                                                                  Flow Weighted***
                                                                                      Mean
                                                                                  Concentration
       NC
       NC
     0.458
     0.307
     0.011
     0.173
     0.029
     0.006
     0.172
     0.549
     0.346
     0.026
     0.198
     0.106
    21.974
     0.031
     0.005
     0.255
                                               VIII-48

-------
                                       TABLE 8-11 (Continued)
                                     Summary of Raw Waste Data
                                   Fluorescent Lamp Manufacturing
                            Concentration*
Other Pollutants
Oil  and Grease
Total Organic Carbon
Biochemical Oxygen Demand
Total Suspended Solids
Phenols
Fluoride
                                              Flow Weighted**
                                                Mean
                                              Concentration   Concentration*
                                                   mg/1            mg/l
                                   5
                                 159
                                 540
                                 194
                                   0.018
                                   5.2
    NC
    NC
    NC
434
    NC
 11.7
 NA
 NA
 NA
52
 NA
 0.170
                              Flow Weighted***
                                 Mean
                              Concentration
                                   mg/1
    NC
    NC
    NC
143
    NC
  2.9
  *
 **
***

 NA
! Single Stream Sample Value
! Developed Process Waste From Sample Stream 03749-85310.
• Summary Waste Includes Developed SnCl  Waste And Glass Tube And Rack Rinse Waste.
 It Does Not Include Equipment And FloSr Washdowns.
 Not Analyzed
 NC = Not Considered For Developed Streams
                                         VIII-49

-------
Table 8-10 summarizes mandrel dissolution raw waste streams
sampled at the following plants manufacturing tungsten filaments:
19082, 28077, and 33202.  Plant 28086 also manufactures tungsten
filaments.  However, data from this plant are not included in the
summarization because a total raw waste sample was not obtained.

Table 8-11 presents raw waste pollutant concentration data of
two samples taken at Plant 19121.  Sample 03749-85310 includes
process wastewater from tin chloride and sulfur dioxide wet air-
scrubbers as well as wastewater from a silicone coating operation.
Raw waste characteristics are developed for the tin chloride coat-
ing wet air scrubber from the existing sampled stream, sample
number 03749-85310.  Not all parameters summarized in Table 8-11
for this sampled stream are transferable to the developed tin
chloride scrubber stream.  The organic pollutants detected are
thought to originate from sampling equipment cleaning and pre-
paration.  Phenols and oil and grease may originate in the silicone
coating solution.  Total organic carbon and biochemical oxygen
demand are not readily equated to any one of the three process
wastes comprising the sampled stream.  The remaining pollutant
parameters as presented in Table 8-11 for the sampled stream,
03749-85310, are flow weighted for the developed tin chloride
scrubber stream.  These parameters include toxic and non-toxic
metals as well as total suspended solids and fluorides.   It is
expected that these pollutants result from the tin chloride coating
process.

Sample 03750-85308 is also presented in Table 8-11.  This sample
includes wastewater from glass tube and rack rinsing, but does
not include wastewater  from equipment and floor washdowns.  This
process waste stream is flow weighted together with the developed
tin chloride scrubber waste stream, producing a developed summary
process waste stream.   Pollutant parameters and wastewater  flow
rates attributed to the sulfur dioxide wet air scrubber and the
silicone coating process are not used in calculating the  sum-
mary process waste for  fluorescent lamp manufacturing.  The
sulfur dioxide scrubber is known only to exist at  this sampled
facility.  Wastewater from this process consists of sulfurous
and sulfuric acid.  In-place waste treatment utilizes  sodium
hydroxide pH adjustment of these acids.  Because of its limited
use and proper in-place treatment, no further consideration is
given to  characterizing sulfur dioxide scrubber wastes as they
relate to fluorescent lamp manufacturing.  Silicone coating
wastes will  also not receive  further consideration in  character-
izing fluorescent  lamp  manufacturing for several reasons.  Si-
licone coating of  fluorescent  lamps was observed at three
facilities.   Plant 19082 never discharges  their  coating solution.
Plant 33189  discharges  approximately 76 liters/month  and  Plant
19121 discharges approximately  242  liters/day.   It is  expected
that  the  volume  of silicone  coating wastes  is  relatively  low
throughout  the  industry.   In addition,  there  are  only a  limited
number of plants manufacturing  fluorescent  lamps.   It is  known
that  at  least one  plant employs  solvents  in  their  silicone
coating  solution.   Therefore,  recommended  treatment for  silicone
coating  process  wastes  is  solution collection and  removal.


                                VIII-50

-------
Process wastewater from fluorescent lamp manufacturing was
sampled at one facility, Plant 19121.   In-place  treatment tech-
nologies  include pH adjustment and gravitational settling as
shown  in  Figure 8-5.  Table 8-12 presents performance for gravi-
tational  settling of wastewater containing phosphor materials.
In addition to process wastewater from  glass  tube and rack rinsing,
equipment and floor washdowns from the  phosphor preparation area
flow to the settling tank.  A flow could not  be determined for
this process because of its irregular occurrence.  The raw waste
sample contained only wastewater from the glass  tube and rack
rinse.  The effluent sample contained treated wastewater from the
washdowns from the phosphor preparation area  as well as that
from glass tube and rack rinsing.  Although settling did occur,
the pollutant concentrations in the effluent  were higher for
most parameters than those of the sampled raw waste.  This
occurred because of the additional raw  waste  source not contained
in the raw waste as sampled.

Treatment-In-Place

The following is a plant-by-plant discussion  of raw waste and
final effluent process wastewaters sampled at plants manu-
facturing electric lamps.  A discussion of waste treatment
technologies presently in existence at  these  sampled plants
is also presented.  The treatment systems at  several plants
visited but not sampled are also discussed.   Table 8-13
summarizes treatment in-place and effluent discharge destina-
tions of ten plants visited during this study.

Plant 28086 produces incandescent lamps, quartz mercury vapor
lamps and coiled tungsten filaments for use in incandescent and
fluorescent lamp manufacturing.  Process wastewaters produced from
the manufacturing of quartz mercury vapor lamps and coiled tung-
sten filaments were sampled and analytical results were presented
in Table 8-8.  Figure 8-5 depicts sampling locations and wastewater
treatment.  A grab sample was taken of  the hydrofluoric acid
bath used in cleaning quartz envelope mercury vapor lamps.  The
rinse after acid cleaning was of low volume discharging directly
to the municipal treatment system and was not sampled.  With the
exception of spent acid used for molybdenum mandrel dissolution,
all other mandrel dissolution process wastewaters from filament
neutralization, cleaning, and rinsing flow to a pH adjustment
tank.  The spent acid used for molybdenum mandrel dissolution is
sent to a holding tank from which a grab sample was taken.  To
this 303 liters (80 gallons) of acid, 1211 liters (320 gallons)
of water is added.  TJie solution is pH  adjusted to a level of
2.5 with the use of ammonia, and precipitation of ammonium
molybdate occurs.  After a 12 hour settling period, the decant
is sent to pH adjustment.  A grab sample was  taken of this
decant.  At this point, a cold water rinse of approximately 1136
liters (300 gallons) is added to the remaining ammonium molybdate
                         VTII-51

-------
                                  01
                                  x>
                                  to
                                  v,
                                             XI
                        4J
                        to
                        a
                         a
                         o
                        •rJ
                        X>

                        t-l
                         O
                         u
                         to
                        •H
                        Q
                         •a
                         c
                         re
                                  O
                                  CO
                                                                                                                                  2
                                                                                                                                  U
                                                                                                                                  a:
                                          .1
O
—<
C
                                         tn
                                         m
                                         m
                                         o
                O
               •H
             O  XI
            •^ -^
             s  a
             
•a o
A e
>t ,g;
                                                                                                      33 Pi
                                                         HI  01
                                                         •O XI
                                                         •H  CO
                                                         X  03
                                                         O S
                                                                                                    3 O
                                                                                                    CO U
                                                                                                                             (0
                                                                                                                             o
                                                                                                                             o
                                                                         C 0)
                                                                         o a
                                                                         o S
                                                                                                                                              CJ
                                                                                                                                              o
                                                                                                                                              04

-------
                                    TABLE  8-12
                  Performance of  In-Place  Treatment Technologies
                                   Plant 19121
Stream Identification

Sample Number


Parameters

Toxic  Organics

 44  Methylene chloride
 86  Toluene

Toxic  Metals

114  Antimony
118  Cadmium
119  Chromium
120  Copper
122  Lead
126  Silver
128  Zinc

Non-Toxic Metals

     Aluminum
     Manganese
     Vanadium
     Boron
     Barium
     Tin
     Yttrium
     Cobalt
     Iron

Other  Pollutants
       Glass Tube and Rack
        Rinse Pre-Settle

           03750-85308

       Concentration (mg/1)
                NA
                NA
              0.597
              0.399
             <0.008
              0.148
              0.022
             <0.005
              0.146
              0.619
              0.445
              0.009
              0.064
              0.121
              0.033
              0.033
              0.003
              0.193
     Oil and Grease                   NA
     Total Organic Carbon             NA
     Biochemical Oxygen Demand        NA
     Total Suspended Solids        52
     Phenols                          NA
     Fluoride                       0.170
Glass Tube, Rack Rinse, and
   Washdown Post-Settle

        03751-85309

    Concentration (mg/1)
          <0.010
             ND
           0.893
           0.668
          <0.008
           0.186
           0.054
          <0.005
           0.172
           1.217
           0.774
           0.021
           0.132
           0.350
           0.056
           0.148
           0.002
           0.463
                                          0
                                         17
                                         60*
                                         82
                                          0.023
                                          0.150
NA = Not Analyzed
ND * Not Detected
 * = Toxic Response.
Value May Be As High As That Which Is Reported.
                                VIII-53

-------
                         TABLE 8-13
                 Electric Lamp Manufacture
     Summary Of Wastewater Treatment At Visited Plants
Plant ID No.
     19121
     33189
     19082
     28077
     33202
     28086

     28120
     34044
     28126
     28127
          Treatment In-Place
pH adjust, settling
Chemical precipitation,
pH adjust, settling,
contractor removal,•
recycle (99.8%)
pH adjust
pH adjust
pH adjust
Chemical precipitation, settling,
vacuum filtration, pH adjust,
contractor removal
None
None
Contractor removal (solvents)
No water usage
Discharge
    I
    I


    D
    I
    I
    I

    I
    I
    D
    NA
 I 3 Indirect
 D » Direct
NA » Not Applicable
                             VIII-54

-------
precipitate.  The mixture is stirred, settled, decanted and the
procedure repeated.  However, during the sampling visit, proper
settling did not occur.  As a result,-this 1136 liter  (300
gallon) mixture rather than the usual settled material was sent
through the vacuum filtration unit.  The filtrate flows to
pH adjustment and the sludge is contractor removed.

Together with wastewater from the molybdenum recovery process,
other mandrel dissolution wastewater flows to a pH adjustment
tank.  The wastewater is pH adjusted with ammonia and flows
to a second pH adjustment unit where it is mixed with  the 303
liter (80 gallon) batch discharge from a wet air scrubber.  A
final pH adjustment with ammonia to a pH of 8.9 occurs prior
to discharge to the sanitary sewer.

Plant 19121 manufactures fluorescent lamps.  Table 8-9 pre-
sented analytical results for those wet processes sampled.
Figure 8-5 depicts sampling locations and wastewater treatment
at this plant.  Glass tube rinse, doubling as a rack rinse,
sends process wastewater to a 2044 liter (540 gallon) settling
tank.  The settling tank is baffled twice.  Wastewater under-
flows the first baffle, overflows the second, and is discharged
from the settling tank to the municipal treatment system.  The
settled phosphors are recovered by gravitational settling and
returned to phosphor preparation.

Wastewater from a wet air scrubber associated with tin chloride
coating flows to a pH adjustment tank.  The pH is adjusted to
approximately 7-8 with sodium hydroxide, and the wastewater is
stirred continuously so as to prevent settling of a tin hydrox-
ide precipitate.  The wastewater is discharged to the municipal
treatment system.

A wet air scrubber associated with sulfur dioxide glass flare
manufacturing sends wastewater to a pH adjustment tank.  The
pH is adjusted to approximately 8-9 before final discharge to
the municipal treatment system.

The silicone coating solution continually overflows its coating
basin and flows directly to the municipal treatment system.
A flow proportioned composite sample was taken of wastewater
produced from the two wet air scrubbers and the silicone
coating overflow.

At Plant 19082 a total raw waste sample was taken of waste-
water generated from the mandrel dissolution process, and the
analysis results were presented in Table 8-5.  There is no for-
mal waste treatment system at this plant.  All process waste-
water from the manufacturing of coiled tungsten filaments flows
                           VIII-55

-------
 to a dry well containing a 45,420  liter (12,000  gallon)  tank
 of calcium carbonate marble chips.   The pH adjusted wastewater
 subsequently percolates into the ground.   Figure 8-6 depicts
 sampling locations and wastewater  treatment at this facility.

 Plant 28077 manufactures incandescent lamps,  mercury vapor
 lamps,  and coiled  tungsten filaments for  use, in  incandescent
 and  fluorescent lamp manufacturing.   The  only wet process  at
 this facility is filament mandrel  dissolution.  Filaments
 wound on molybdenum mandrels are used in  fluorescent lamp
 manufacturing,  and filaments wound on steel and  copper-clad
 steel mandrels  are used in incandescent lamp  manufacturing.

 An attempt was  made to segregate the two  different mandrel dis-
 solution processes.   However,  because of  the  variability in
 number and size of the solution  dumps,  not all bath dumps  could
 be sampled proportionally.   Therefore,  the two raw waste samples
 are  not truly representative of  the  individual dissolution pro-
 cesses.   Analysis  of these raw waste streams  was presented in
 Table 8-6,  and  sampling locations and wastewater treatment are
 depicted in Figure 8-6.

 All  mandrel dissolution wastewater flows  to a twice baffled
 3,482 liter (920 gallon')  pH adjustment tank.   The wastewater
 underflows  the  first baffle and  overflows the second baffle
 before  discharge to  the muninipal treatment system.   Because the
 mandrel  dissolution  wastewater is generally very acidic, pH
 adjustment  employs sodium hydroxide  addition  only.   The  caustic
 addition is automatically controlled,  and the wastewater is
 continually mixed.   During the sampling visit the pH control
 monitoring  device  was  malfunctioning.   A  pH of 8-9  is normally
 maintained,  but a  level  of 11.6  was  recorded  for the 8-hour
 sampling period.   An 8-hour continuous  composite sample  of the
 final effluent  was  taken,  and  analysis  results were  presented  in
 Table 8-6.

 Plant 33202  manufactures  coiled  tungsten  filaments  and employs
 a wet mandrel dissolution process.   All process  wastewater flows
 to a  pH  adjustment  tank  prior  to discharge to the municipal
 treatment system.  Process  wastewater  at  a pH of 2.0-2.5 is  pH
 adjusted  to  a level  of  8-9.  Analytical results  of  the final
 effluent were presented  in  Table 8-7,  and Figure 8-6 depicts
 sampling  locations and wastewater treatment.

 Plant 33189 manufactures  fluorescent lamps.   This plant  was
visited but  not sampled.  Wastewater treatment in-place  is
depicted  in  Figure 8-7.   Process wastewater from a wet air
scrubber associated  with  tin chloride coating is  sent to a
 2082 liter  (550 gallon)  settling tank  in  which chemical  pre-
cipitation occurs.    Sodium  hydroxide  is added to precipitate
                            VIII-56

-------

         c
         o

         CM
                                                  •i-i  nj  to
                                                   SB*
                                                  in
   o
   4J
   m
   c
   o
  O


   3
  •H
   O
  rH
   m
  u
 CO
             0)
                                                    0
             03

             s
             3
             •H
             •a
             o
             CO
CN
00
O
cn
EH
3

J
CU
         c
         o
        -l-l
        Q
 I
 o
 M     CO
 3     CU
IW  13 -U
VH  -H CO
 3  O (0
co  
-------
     Tin
    Chloride
    Scrubber
     Waste
                 Return
                   To
                 Process
                      ±
   Chemical
Precipitation
  & Settling
                      I
                    Settling
                      1
                    Settling
                       t
                Contract Haul
                    Municipal
                   ' Treatment
                     System


                    Municipal
                   •Treatment
                     System
                Return
                  To
                Process
Glass Tube
Sponge Wipe -w
   Waste
 Settling
                       t
              Phosphors Reprocessed
                Return
                  To
                Process
Glass Tube .^
Rinse Waste.
Deionization
               PLANT  33189
                FIGURE 8-7

        IN PLACE WASTE TREATMENT'


                  VIII-58

-------
tin hydroxide and the treated wastewater is returned  to process.
Once a week the settled sludge is pumped to another settling
tank and settled for three days.  The decant  is sent  to the muni-
cipal treatment system, and the settling procedure is repeated.
The sludge is then contractor removed.  At the time of contractor
removal of sludge/ a total of 379 liters (100 gallons) or  less
of wastewater has been discharged to the municipal treatment system.

Process wastewater from glass tube sponge wiping  flows to  a
189 liter (50 gallon) settling tank.  The phosphors are re-
covered and reprocessed, and the treated wastewater is returned
to process.  Process wastewater from deionized glass  tube  rinsing
is sent to a holding tank, deionized, and returned to process.

POTENTIAL POLLUTANT PARAMETERS

Potential pollutant parameters for the  electric lamp  subcategory
were selected from the list of pollutant parameters analyzed for
as presented in Table 8-4.  Rationale for selection as a potential
pollutant parameter was based on the followingj

          Presence of toxic pollutants, non-toxic
          metals, and other pollutants

          Occurrence of pollutant as a  raw material or process
          chemical in electric lamp manufacturing processes

     .    Treatability of pollutants at reported  concen-
          tration levels

          Toxicity of pollutants at reported  concentration
          levels

Table 8-14 presents the potential pollutant parameters  for the
electric lamp subcategory.

Tables 8-15 and 8-16 list pollutants other  than  those selected
as potential parameters that were analyzed  in the process  raw
waste streams sampled  for the electric  lamp subcategory.   Pol-
lutants are presented  according  to  the  following  criteria:
not detected, detected at trace  levels, or  detected  at levels
too low to be effectively treated prior to  discharge.  Pollutant
concentrations are determined too low to  be effectively treated
for any or all of the  following  reasons:

          Levels of treatability for many non-toxic
          parameters are unknown.
                            VIII-59

-------
                         TABLE  8-14

               POTENTIAL POLLUTANT PARAMETERS
Toxic Metals

114  Antimony
118  Cadmium
119  Chromium
120  Copper
122  Lead
126  Selenium

Non-Toxic Metals

     Molybdenum
     Tin
     Iron
     Tungsten

Other Pollutants

     Total Suspended Solids
Fluorescent Lamps

       X
       X
Tungsten Filaments
       X
       X
       X
       X
       X
                             X
                             X
       X
X - Potential Parameters
                                 VIII-60

-------
                   TABLE 8-15

POTENTIAL POLLUTANT PARAMETERS NOT SELECTED FOR
              FILAMENT MANUFACTURE
       NOT DETECTED IN RAW WASTE STREAMS
Toxic Organics

 1.  Acenaphthene                                46.
 2.  Acrolein                                    47.
 4.  Benzene                                    49.
 5.  Benzidine                                   50.
 6.  Carbon Tetrachloride(Tetrachlororaethane)    52.
 7.  Chlorobenzene                              53.
- 8.  1,2,4-Trichlorobenzene                     54.
 9.  Hexachlorobenzene                          56.
10.  1,2-Dichlorethane                          57.
12.  Hexachloroethane                           59.
13.  1,1-Dichloroethane                         60.
14.  1,1,2-Trichloroethane                      61.
15.  1,1,2,2-Tetrachloroethane                  62.
16.  Chloroethane                                63.
17.  Bis(Chloronethyl)Ether                     64.
18.  Bis(2-Chloroethyl)Ether                    67.
19.  2-Chloroethyl Vinyl Ether (Mixed)           69.
20.  2-Chloronaphthalene                        71.
21.  2,4,6-Trichlorophenol                      72.
22.  Parachlorometci Cresol                      73.
24.  2-Chlorophenol                             74.
25.  1,2-Dichlorobenzene                        75.
26.  1,3-Dichlorobenzene                        76.
27.  1,4-Dichlorobenzene                        77.
28.  3,3'-Dichlorobenzidine                     79.
29.  1,1-Dichloroethylene                       80.
30.  1,2-Trans-Dichloroethylene                 82.
 31.  2.4-Dichlorophenol                         83.
 32.  1,2-Dichloropropane                        84.
 33.  1,2-Dichloropropylene(1,3-Dichloropropene).85.
 34.  2,4HDimethylphenol                         87.
 35.  2,4-Dinitrotoluene                         88.
 36.  2,6-Dinitrotoluene                         89.
 37.  1,2-Diphenylhydrazine                      90.
 38.  Ethylbenzene                               91.
 39.  Fluoranthene                               92.
 40.  4-Chlorophenyl Phenyl Ether                93.
 41.  4-Bromophenyl Phenyl Ether                 94.
 42.  Bis(2-Chloroisopropyl)Ether                95.
 43.  Bis(2-Chloroethoxy)Methane                 96.
 45.  Methyl Chloride(Chloromethane)             97.
                           Methylbromide (Bronomethane)
                           Brcsnoform  (Tribrcairanethane)
                           Trichlorofluoronethane
                           Dichlorodifluorcsnethane
                           Hexachlorobutadiene
                           Hexachlorocyclc^entadiene
                           Nitrobenzene
                           2-Nitrophenol
                           2, 4H3initrophenol
                           4, 6-Dinitro-o-Cresol
                           N-Nitrosodimethylamine
                           N-«itrosodiphenylamine
                           N-^Iitrosodi-N-Propylamine
                           Pentachlorophenol
                           Butyl Benzyl Phthalate
                           Di-W-Octyl Phthalate
                           Dimethyl Phthalate
                           1,2-Benzanthracene  (Benzo(A)Anthracene)
                           Benzo  (A) Pyrene  (3,4-Benzo-Pyrene)
                           3, 4^enzofluoranthene  (Benzo(B)Fluoranthene)
                           11 , 12-fienzof luoranthene (Benzo ( K ) Fluoranthene )
                           Chrysene
                           Acenaphthylene
                           1, 12-Benzoperylene (Benzo (GHI ) -Perylene )
                           Fluorene
                           1, 2, 5, 6-€>ibenzathracene(Dibenzo(A,H)Anthracene)
                           Indeno (1,2, 3-CD ) Pyrene ( 2 , 3-0-Phenylene Pyrene )
                           Pyrene
                           Tetrachloroethylene
                          _ Trichloroethylene
                          "vinyl  Chloride  (Chloroethylene)
                           Aldrin
                           Dieldrin
                           Chlordane (Technical Mixture and Metabolites)
                           4, 4 '-DDT
                           4,4'-DDE  (P,P'-DDX)
                           4, 4 '-ODD  (P,P-JTDE)
                           Alpha-Endosulfan
                           Beta-Endosulfan
                           Endosulfan Sulfate
                      VIII-61

-------
                                   TABLE 8-15 CON'T


                     POTENTIAL POLLUTANT PARAMETERS NOT  SELECTED FOR
                                   FILAMENT MANUFACTURE
                           NOT DETECTED IN RAW WASTE STREAMS
  98.  Endrin                                     106.
  99.  Endrin Aldehyde                            107.
100.  Heptachlor                                108.
101.  Heptachlor Epoxide  (BHC= Hexachloro-       109.
        cyclohexane)
102.  Alpha-BHC                                  110.
103.  Beta-BHC                                   111.
104.  Gamma-BBC  (Lindane)                        112.
105.  Delta-BHC  (PCB-Polychlorinated Biphenyls)  113.
                                                 129.

OTHER POLLUTANTS

      Oil and Grease
      Xylenes
      Alkyl Epoxides
      PCB-1242  (Aroclor 1242)
      PCB-1254  (Aroclor 1254)
      PCB-1221  (Aroclor 1221)
      PCB-1232  (Aroclor 1232)
      PCB-1248
      PCB-1260
(Aroclor 1248)
(Aroclor 1260)
      PCB-1016 (Aroclor 1016)
      Toxaphene
      2,3,7,8-Tetrachlordibenzo-P-Dioxin (TCDD)
                                      DETECTED AT TRACE LEVELS
TOXIC ORGANICS

  3.  Acrylonitrile
 11.  1,1,1-Trichloroethane
 51.  Chlorcdibrcmomethane
 55.  Naphthalene
 58.  4-Nitrophenol
 65.  Phenol
 66.  Bis(2-Ethylhexyl) Phthalate
 68.  DiHfl-Butyl Phthalate
 70.  Diethyl Phthalate
 78.  Anthracene
 81.  Phenanthrene
 86.  Toluene
TOXIC METALS

114.  Antimony
123.  Mercury

KOHTOXIC METALS

      Potassium
      Gallium
      Germanium
      Rubidium
Tellurium
Osmium
Platinum
Bismuth
                                             VIII-62

-------
                               TABLE 8-15 (Continued)

                      DETECTED AT LEVELS NOT REQUIRING TREATMENT
TOXIC ORGANICS
 23.  Chloroform
 44.  Methylene Chloride
 48.  Dichlorobronome thane

TOXIC METALS
115.
117.
124.
126.
127.
128.
      Arsenic
      Beryllium
      Nickel
      Silver
      Thallium
      Zinc
NON-TOXIC METALS

      Aluminum
      Manganese
      Vanadium
      Boron
      Barium
      Tin
      Yttrium
      Cobalt
      Titanium
      Strontium
      Zirconium
      Niobium
      Palladium
      Indium
      Gold
      Uranium

OTHER POLLUTANTS

121.  Cyanide Total
      Total Organic Carbon
      Biochemical Oxygen Demand
      Phenols
      Fluoride
                                                  Mean Concentration
                                                        mgA

                                                      0.039
                                                      0.035
                                                      0.007
0.022
0.004
0.302
0.068*
0.102
0.077
                                                       1.550
                                                       0.354
                                                       0.396
                                                       0.474
                                                       0.019
                                                       0.215*
                                                       0.043
                                                       0.397*
                                                       0.019*
                                                       0.198
                                                       0.157
                                                       0.61
                                                       0.125
                                                       2.07
                                                       0.400**
                                                       0.133*
                                                       0.005
                                                     101
                                                      30
                                                       0.017
                                                       0.270
  * = Does Not Require Treatment As Maximum Value  Is At A Trace Level,
 ** = Single Stream Sample Value.
                                    VIII-63

-------
                                             TABLE 8-16

                          POTENTIAL POLLUTANT PARAMETERS NOT SELECTED FOR
                                    FLUORESCENT LAMP MANUFACTURE
                                 NOT DETECTED IN RAW WASTE STREAMS
TOXIC ORGflNICS

 1.  Acenaphthene                     .          46.
 2.  Acrolein                                   47.
 3.  Acrylonitrile                              49.
 5.  Benzidine                                  50.
 6.  Carbon Tetrachloride(Tetrachlorcjnethane)   51.
 7.  Chlorobenzene                              52.
 8.  1,2,4-Trichlorobenzene                     53.
 9.  Hexachlorobenzene                          54.
10.  1,2-Dichlorethane                          55.
12.  Hexachloroethane                           56.
13.  1,1-Dichloroethane                         57.
14.  1,1,2-Trichloroethane                      58.
15.  1,1,2,2-Tetrachloroethane                  59.
16.  Chloroethane                               60.
17.  Bis(Chloromethyl)Et±er                     61.
18.  Bis(2-Chloroethyl)Ether                    62.
19.  2-Chloroethyl Vinyl Ether (Mixed)          63.
20.  2-Chloronaphthalene                        64.
21.  2,4,6-Trichlorophenol                      67.
22.  Parachlorometa Cresol                      69.
24.  2-Chlorophenol                             72.
25.  1,2-Dichlorobenzene                        73.
26.  1,3-Dichlorobenzene                        74.
27.  1,4-Dichlorobenzene                        75.
28.  3,3'-Dichlorobenzidine                     76.
29.  1,1-Dichloroethylene                       77.
30.  1,2-Trans-Dichloroethylene                 79.
31.  2.4-Dichlorophenol                         80.
32.  1,2-Dichloropropane                        82.
33.  l,2-Di<±loroprcpylene(l,3-Dichloropropene) 83.
34.  2,4-Diroethylphenol                         84.
35.  2,4-Dinitrotoluene                         85.
36.  2,6-Dinitrotoluene                         87.
37.  1,2-Diphenylhydrazine                      88.
38.  Ethylbenzene                               89.
39.  Pluoranthene                               90.
40.  4-Chlorophenyl Phenyl Ether                91.
41.  4-Brcmophenyl Phenyl Ether                 92.
42.  Bis(2-Chloroisopropyl)Ether                93.
43.  Bis(2-Chloroethoxy)Methane                 94.
45.  Mathyl Chloride(Chlororaethane)             95.
Methylbromide (Bromoraethane)
Bromoform (Tribromoraethane)
Trichlorofluoronethane
Dichlorodifluoromethane
Chlorodibromcxnethane
Hexaohlorobutadiene
Hexachlorocyclopentadiene
Isophorone
Naphthalene
Nitrobenzene
2-Nitrophenol
4-^Iitrophenol
2,4-Dinitrophenol
4,6-Dinitro-o-cresol
N-Nitrosodimethylamine
N-Nitrosodiphenylamine
N-Nitrosodi-N-Propylamine
Pentachlorophenol
Butyl Benzyl Phthalate
Di-«-Octyl Phthalate
l,2HBenzanthracene (Benzo(A)Anthracene)
Benzo (A) Pyrene (3,4-Benzo-Pyrene)
3,4-Benzofluoranthene (Benzo(B)Floranthene)
ll,12^enzofluoranthene(Benzo(K)Fluoranthene)
Crysene
Acenaphthylene
1,12-Benzoperylene(Benzo(GHI)-Perylene)
Fluorene
1,2,5,6-Dibenzathracene(Dibenzo(A,H)Anthracene)
Indeno(1,2,3-CD)Pyrene(2,3-0-Phenylene Pyrene)
Pyrene
Tetrachloroethylene
Trichloroethylene
Vinyl Chloride (Chloroethylene)
Aldrin
Dieldrin
Chlordane (Technical Mixture and Metabolites)
4,4'-DDT
4,4'-DDE (P,P'-DDX)
4,4'-ODD (P,P-TDE)
Alpha-Endosulfan
                                          VIII-64

-------
                                         TABLE 8-16 CON'T
                          POTENTIAL POLLUTANT PARAMETERS NOT SELECTED FOR
                                    FLUORESCENT LAMP MANUFACTURE
                                 NOT DETECTED IN RAW WASTE STREAMS
 95.  Alpha-Endosulfan
 96.  Beta-Endosulfan
 97.  Endosulfan Sulfate
 98.  Endrin
 99.  Endrin Aldehyde
100.  Heptachlor
101.  Heptachlor Epoxide (BHC=Hexachloro-
        cyclohexane)
102.  Alpha-^HC
103.  Beta-BHC
104.  Gamma-BHC (Lindane)
105.  Delta-BHC (PCB-Polychlorinated Biphenyls)
106.  PCB-1242 (Aroclor 1242)
107.  PCB-1254 (Aroclor 1254)
108.  PCB-1221 (Aroclor 1221)
109.  PCB-1232 (Aroclor 1232)
110.  PCB-1248 (Aroclor 1248)

111.  PCB-1260 (Aroclor 1260)
112.  PCB-1016 (Aroclor 1016)
113.  Toxaphene
129.  2,3,7,8-Tetrachlorodibenzo-P-Dioxin (TCDD)
OTHER POLLUTANTS

121  Cyanide, total
     Xylenes
     Alkyl Epoxides
                                      DETECTED AT TRACE LEVELS
TOXIC ORGANICS

 4.  Benzene
11.  1,1,1-Trichloroethane
23.  Chloroform
48.  Dichlorobromomethane
65.  Phenol
66.  Bis(2-Ethylhexyl) Phthalate
 68.  Di-N-butyl Phthalate
 70.  Diethyl Phthalate
 71.  Dimethyl Phthalate
 78.  Anthracene
 81.  Phenanthrene
TOXIC METALS

115.  Arsenic
123.  Mercury
124.  Nickel
127.  Thallium
117.  Beryllium
125.  Selenium
NON-TOXIC METALS
     Molybdenum
     Titanium
                                             VIII-65

-------
                                        TABLE 8-16 CON'T

                           DETECTED AT LEVELS NOT REQUIRING TREATMENT
TOXIC ORGANICS

 44.  Methylene Chloride
 86.  Toluene

TOXIC METALS

119.  Chromium
120.  Copper
126.  Silver
128.  Zinc

NON-TOXIC METALS

     Aluminum
     Manganese
     Vanadium
     Boron
     Barium
     Yttrium
     Cobalt

OTHER POLUJEANTS

     Oil and Grease
     Total Organic Carbon
     Biochemical Oxygen Demand
     Phenols
     Fluoride
                                                      Developed
                                                    Plow Weighted*
                                                  Mean Concentration
                                                        (mg/1)

                                                       0.063**
                                                       0.011**
                                                       0.011
                                                       0.173
                                                       0.006
                                                       0.172
                                                       0.549
                                                       0.036
                                                       0.026
                                                       0.198
                                                       0.106
                                                       0.031
                                                       0.005
                                                       5    **
                                                       159  **
                                                       540  **
                                                       0.018**
                                                       2.9
**
     Single Stream Sample Value
     Parameters Do Not Require Treatment Based On Single Stream Sample Values.
                                                VIII-66

-------
          Pollutants are not selected if raw waste
   ="      concentrations are less than the long terra
          average concentrations established for the
          levels of recommended treatment.

Aluminum, silver, tin, cobalt, titanium, and manganese have not
been selected as potential pollutant parameters for filament
manufacture because the three recommended levels of treatment
will effectively reduce their.concentrations while precipitat-
ing other potential pollutant metals.  Additionally silver,
tin, cobalt, and titanium, as well as uranium, have not been
selected because the maximum concentrations reported for
these metals are at nonquantifiable levels*  Therefore, when
these nonquantifiable levels are used in calculating the mean
concentrations and the flow weighted mean concentrations,  they
increase these calculated values to concentration levels that
are potentially controllable.

An example of this situation exists for tin.  Table 8-10
presents minimum, maximum, mean, and flow weighted mean con-
centrations for filament mandrel dissolution as sampled at
three facilities.  Tin concentrations for the three sampled
streams include:  0.051 mg/1, 0.080 mg/1, and <0.515 mg/1.
If only measurable concentrations, 0..051 mg/1 and 0.080 mg/1,
are used in determining mean and flow weighted mean concentra-
tions, then resultant concentration levels are 0.060 mg/1
and 0.056 mg/1 respectively.  These levels are less than that
which is achievable by the levels of recommended treatment.
However, if all three streams are utilized in determining  the
mean and flow weighted mean concentrations,increased concentra-
tion levels occur as presented in Table 8-10.  These concentra-
tions are indeed attainable by the levels of recommended treat-
ment.  Because they were determined using a nonquantifiable value
which is also the maximum reported value, this parameter is pre-
sented in Table 8-14 at a concentration not requiring treatment.

Wastewater analysis for gold was performed at one of three plants
considered in summarizing raw waste data for Table  8-10.   The
sample for which gold was analyzed contains 7.0 mg/1 of tungsten.
Gold and tungsten have been observed on several occasions  to
appear together on emission spectra.  Therefore, it As possible
that an analytical interference occurs between gold and tungsten.
This would explain the presence of gold in samples  known to
contain tungsten and which should not contain gold.

APPLICABLE TREATMENT TECHNOLOGIES

Based on the potential pollutant parameters selected and actual
treatment technologies observed within the electric lamp industry,
the following treatment technologies are recommended for pollu-
tant control within this subcategory:

          Chemical precipitation and sedimentation
                              VIII-67

-------
           Settling
           Reverse osmosis
           Sludge dewatering
           Final  pH adjustment
           Multimedia filtration
           Pressure filtration
           Contract removal

 These  technologies are discussed in detail in Section XI1 of this
 report.

 Recommended  Treatment Systems

 Alternative  waste treatment technologies  are presented for the
 electric  lamp  subcategory.  Treatment technologies are defined
 for process  wastes from the manufacture of fluorescent lamps,
 tungsten  filaments,  and quartz  mercury vapor lamps.   The following
 discussion presents  2 levels of waste treatment  for fluorescent
 lamp manufacture,  3  levels of waste treatment for filament manufac-
 ture,  and  1  level  of waste treatment for  quartz  mercury vapor
 lamp manufacture.

 Fluorescent  Lamps  -  Level 1 - Treatment of process wastewater
 for fluorescent  lamp manufacture requires only two levels of
 treatment  to achieve total recycle.   The  recommended Level 1
 treatment  system is  shown in Figure 8-8.   Level  1 treatment
 consists of  the  following:

           Settling of phosphor  wastes
           Chemical precipitation and sedimentation in a
           clarifier  of wet air  scrubber wastes using lime,
           a  coagulant aid, and  a polyelectrolyte
     .     Sludge  dewatering
     .     Final  pH adjustment
     .     Collection and  removal of  silicone coating
           wastes

 Level  2 -  Recommended treatment includes  the system  described
 for Level  1  with  two additions.   Level  2  treatment is shown
 in Figure  8-8  and  the additions are  as  follows:

           Total  recycle of treated wastes for the wet
           air  scrubber associated with  tin chloride  coating.

     .     Total  recycle of treated wastewater for glass
           tube brush scrub or sponge  wipe,  and rack  cleaning.

Tungsten Filaments - Level 1  -  Recommended treatment for  fila-
ment mandrel dissolution  is  shown in  Figure 8-9.   The Level  1
treatment  system includes:

           Chemical precipitation and  sedimentation in a
           clarifier  with  the  use of  lime,  ferric  sulfate,  a
           coagulant  aid,  and  a  polyelectrolyte
                                VIIl-68

-------
LEVEL 1
* Lime
Wet Air
Waste , i

Sponge Wipe "" ' '*"""
Brush Scrub &
Hack Clean " " 	
Phosphor a
Reprocessing
LEVEL 2

Wet Air ,,._,' 	
Waste i
Chemical
Precipitation
i '
Vacuum Filter
1 '
Contract Haul
Lime
Chemical
Precipitation
Return to
Process!
Sponge Wipe """ "" 	 1
or . 	 •. Settling — »
Brush Scrub &
Hack Clean 	 "•'"
Phosphor _
Reprocessing
Vacuum Filter

i
Contract Haul


Return to Process
"I



                                        FIGURE 8-8



                             FLUORESCENT LAMP WASTE TREATMENT
                                           VIII-69

-------
LEVEL 1
   Mandrel
Dissolution-
    Haste
                                    Ferric Sulfate
                                          &
                                        Lime

                                    	t
  Chemical
Precipitation
                                   Vacuum Filter
                                   Contract Haul
pH Adjustment
LEVEL  2
                                    Ferric Sulfate
                                         &
                                        Lime
   Mandrel
Dissolution-
    Haste
   Chemical
Precipitation
                                   Vacuum Filter
Contract
Haul
LEVEL 3
   Mandrel
Dissolution-
    Haste
Return to

Holding
Tank
1
EH
Adjustment
NoOH
to
pH 5
Process

Reverse
Osmosis
i
I
Pressure
Filtration
1


1
Contract Haul
1


Ferric Sulfate
S
Lime
Chemical
Precipitation
i

Vacuum Filter
i

Contract Haul
Multimedia . ..
Filtration

                                                  FIGURE  8-9

                                        FILflHIMT MANUFACTURE HASTE TREATMENT

                                                      vm-70

-------
          Sludge dewatering
          Final pH  adjustment

Level 2 - Recommended  treatment  consists  of  Level  1  treatment with
the addition of multimedia filtration  to  reduce  the  concentration
of suspended solids.   Multimedia filtration  for  effluent polishing
is used in many industries as  well  as  in  municipal treatment appli-
cations, and the technology  is readily transferable.   Level  2
treatment is also shown  schematically  in  Figure  8-9.

Level 3 - Recommended  treatment  consists  of  Level  2  treatment with
two additional processes.  The additions  are shown in  Figure 8-9
and comprise;

          pH adjustment  with sodium hydroxide to precipitate iron
          Pressure  filtration  to remove iron oxide precipitate
          prior to  reverse osmosis
          Reverse osmosis to concentrate  the wastes.
          Recycle of the permeate from the reverse osmosis to
          the process.

Quartz Mercury Vapor Lamps - Level  1 - Recommended treatment for
the acid cleaning of quartz  mercury vapor lamps  is presented in
Figure 8-10.  This  low volume  wet process was observed at only
one facility, Plant 28086.   It is not  known  if there are other
lamp manufacturing  facilities  employing a similar  process.   There-
fore, only Level 1  treatment is  recommended  for  quartz mercury
vapor lamp manufacture and includes wastewater collection and
contract removal.

Performance of In-Place  Treatment Systems

The performance of  treatment .components that have  been sampled
as in-place technology for the electric lamp subcategc-ry is
presented in Tables 8-12 and 8-17.   Filament mandrel dissolution
was observed and sampled at  four facilities.   Plants 19082,
28077, and 33202 employed pH adjustment of the final effluent
as their only wastewater treatment  process.   The fourth plant,
28086, had some additional treatment processes as  well.   These
processes are shown in Figure  8-5 and  performance  of the treatment
components is presented  in Table 8-17.  None of  the  three levels of
treatment recommended  for filament  manufacture has been observed
as in-place treatment  systems  within the  industry.  Performance of
in-place treatment  for fluorescent  lamp manufacturing  was observed
and sampled at one  facility, Plant  19121.  Discussion  and performance
of treatment technologies is presented  under the "Summary of Raw
Waste Stream Data"  section and in Table 8-12,  respectively.
                            VIII-71

-------
LEVEL 1
Quartz
Lamp fc
Cleaning
tfoeji-ia
Holding
Tank


Contract
Haul


                               FIGURE 8-10

                   Quartz Mercury Vapor Lamp Manufacture
                            Waste Treatment
                                 VUI-72

-------
la a
r-.
in
00
m
o
                              o\ *r vo 'a4 m
                              o>) in ro in o
                              O in rHrH O
                                •   •   •   «   •
                              o o oo o
                   oao
                   oo oo
                   on
                     •  •
                   00  OJ t~ O
                               O iH iH m O
                                                       ro
                                                       crt
                                   
            OJ4J
                    \o
                    oo
                               VO
OO
01
                  ••I'O m
                  CM CO O
                  oo m o
                                     i— i in o
                                               .-I
                                               o
                                               vo
                                                 •
                                             0
                                             VO
                                             O
                                             PO
                                                                        
                                                       in
                                                                         ra
                                                                         •o
                                                                         I
                                                                          3
                                                                         CO
                                                                          (0
                                   Sen o CM in
                                   ^H 04 CM 01
                                             VIII-73

-------
 Performance of Recommended Treatment Systems
   <•
 Performance of the two levels of recommended treatment for fluor-
 escent  lamp manufacture is presented in Table 8-18.  Performance
 of  the  three levels of recommended treatment for tungsten filament
 manufacture is presented in Table 8-19.  Performance is based on
 sampling  data obtained from visited plants in the E&EC Category as
 well  as data from plants from other industries with similar wastes
 and treatment.  Because of similarity in raw waste characteristics
 to  other  industries,  the performance of treatment technologies
 in  other  industries is applicable to the E&EC Category.  Performance
 of  the  individual treatment components is presented in Section XII.

 A Level 1 treatment system for fluorescent lamp manufacture was
 not observed in-place at any of the visited plants and thus per-
 formance  of the recommended treatment system is transferred from
 other industries.  However, phosphor settling of glass tube and
 rack  rinse wastes was observed and sampled at Plant 19121.  Sampl-
 ing data  for gravitational settling of phosphors was presented in
 Table 8-12.   The raw  waste sample and flow rate does not include
 equipment and floor wasdowns which were not obtained during the
 sampling  effort.   The effluent does contain all wastewater sent
 through the settling  tank.   Therefore, true performance of this
 treatment technology  is not complete.  In addition, retention time
 for the gravitational settling of phosphors was at most twenty
 minutes if based only on the known flow rate entering the settling
 tank.   The additional unknown flow rate from equipment and floor
 washdowns will reduce the retention time below twenty minutes.

 Level 2 treatment for fluorescent lamp manufacturing does not
 include any treatment technology additional to the recommended
 Level 1 treatment system.   Pollutant discharge is eliminated by
 total recycle of  treated wastes.   Level 2 treatment for fluorescent
 lamp  manufacture  was  observed but not sampled at Plant 33189.  This
 treatment system is.known to exist as in-place treatment at two
 other fluorescent lamp manufacturing facilities.

 None  of the  three levels of recommended treatment for tungsten
 filament  manufacture  have been observed as in-place treatment
 and performance of  the recommended treatment systems is trans-
 ferred  from other industries.  This performance is presented in
 Table 8-19.   Levels 2 and 3 treatment for tungsten filament manu-
 facture employ the  addition of a multimedia filter to the Level
 1 treatment  system.   This improves metals removal while lowering
 the total  suspended solids  level.   This occurs because some of
 the metal  hydroxide precipitates  will be further removed by the
multimedia filter.  In addition,  Level 3 utilizes reverse osmosis
 to  concentrate wastes and produce a treated permeate for process
 reuse.  It is estimated that 85 percent of the treated wastewatef
will  be returned  to process.

-------
 *
 *
 
 CD
 •4
       JM
       CU
       EH
              Cn
           CU  S
           >
           
                                                                               (0
                                                                               O
                                                                               u
       >«  3 fH
       iH  S \
       •H 
                                      O
                                      m
                                oo o
                                 •  •  •
                                000
                                                   vo
                                                   CN
                                                                  00
                                                                         04
                                                                         to
                                                                         O

                                                                        04


                                                                         0)
                                                                        •u
                                                                         3
                                                                        rH
                                                                         O
                                                                         C
                                                                        M
 i
09


3
CO
•8t
RJ  «J
Q  M  0»
I   CU  B
 >i 3.H

•^ -H cn
 RJ  X B
O  at
•   £
                                      r-
                                oo o
                                oo o
                                      \f>
                                rHO rH
                                 •  •  •
                                oo o
                                                  vo
                                                  fH
                                                    •

                                                  O
                                                                         r-

                                                                          •
                                                                         o
                                                                  CN
                                                                  vo
                                                                  r-l
                                                                  tfl
          O
   TJ
*   cu
 CU 4J
4J JC     4J
 CQ  0iC  (0
 flJ-H  flj  iJ
SB  cu  cu
    ss
 il»
c;  o
   Cei
                                4J  01
                                c  e
                                cu
                                o

                                I
                                00 I*- 0\
                                mo CN
                                      o
                                000
                                            cn
                                             •
                                            rH
                                            CN
                                                                  PO
                                                                  "I"
                         2
                   ca    <;

                   CU    Cd
                   **    £

                   I    u
                   m    M
                   M    x
                   RJ    O
                   fib    &4
                                c e
                                O 3
                                   B t)
                                      RJ
                                      CU
                         iHiH CN
                         fHfH iH
                                            CO
                                     H
                                     £

                                     O
                                     M
                                      s
                                      S3
                                                   CQ
                                                   EH


                                                   I
                                                   a
                                                                               os
                                                                               Ed

                                                                               EH
                                                                               O
                                                                                     •O
                                                                                      CU
                                                                                     •CJ

                                                                                      cu

                                                                                      CQ
                                                                                      3  CQ
                                                                                     CQ  "O
                                                         CO O
                                                         4J CQ
                                                         O
                                                         EH
                                                                         CO
                                                                         (V
                                                                         o
                                                                        a
                                                                         e
                                                                         (8
                                                                         0)
                                                                         M
                                                                        .u
                                                                        co

                                                                          CQ -H
                                                                         CU RJ iH

                                                                               4J
                                                                        < i4 D
                                                                           O
                                                                         CQ O CN
                                                                        IH r-H
                                                                           b rH
                                                                         CQ     CU

                                                                        JC C CU
                                                                        EH < iJ
                                                                                     *
                                                                                     *

-------
                                U  01
                                d)  CJ>rH
                         *
                         n
                          at
                              .3*
                                (0  10 X
                               Q  M  Oi
                               O  >
                               ro rf
                                   e
                                >t 3 rH
                               rH  gX.
                               •H -ri  en
                                ITJ  x  e
                               Q  ra
                                U  0)
                                Ol  OrH
                               t<  18 X,
                               r-l CT1 00 ^"
                               i-l rH «3 PI
                               o n m o
                        •K
                        * r-
                        o in
                        CM CM
                          •   •
                        o o
                               3"
                                                                                            01
                                                                                            en
                                                                                            u
                                                                                            IB
                                                                                           &
                                                                                            O
                                                                                            o]
                                                                                            01
                                                                                            10
                                                                                            ra


                                                                                           •o
                                                                                            c
                                                                                            Ol
                                                                                            en
                                                                                                                     10
                                                                                                                    J3
                                                                                                                     O
                                                                                                                    JJ
                                                                                                                    c
                                                                                                                    1C
                                   0)
      SH
      IS  Ctf
      e<  o
          u co
      Q  ca B
      U  EH Z
      a  < ca
      SB  CJ E
       (0  (0 rH
      Q  MX.
       I   4) tn
      o  > e
       ra  x  E
      a  ID
in
rH i
O TJ" *? o
  *  *   *   *
0000
                               pi TT co o
                               O CV| rH rH <
                               O rH rH O
                                                                         *
                                                                          PO
                                                                         CN m  «;
                                                                           •   •  Z
                                                                         o o
                        *
                        *
                        co in
                        in r»
                          •   •
                        o o
in
  •
10
CO
 •


m
                                                                                                                     (U
                                                                                                                     O
                                                                                           •a
                                                                                            0)
                                                                                                              01
                                                                                                              ai
                                                                                                              O
                                                                                                              a
a
en
0 cu
ca x z
K «s ca
   a EH
Ct4    CO
o 0 o
ta 05 3
O EH EH
Z U
< CO
   §u3
   ca
       M  01
       4)
                                  01
                               >i tn
                               10 ID rH
                               Q MX
                               I  4) Bl
                               o > B
                                 l 3 JH
                                     Ol
                               i8 x m
                               a a
                                  o
   •a
    oi
0) -U
jj j:    4J
03  en    to
(0 -H  C  M rH
S  01  (0 4JX
   3  0)  C  CO
                            5    §
                            Cu    U
N M •«• O
rH f*- rH lf» rH
o in co o o

o o o o o
                               C«J O «> P» rH
                               O CD O O O
                                     r>( in n
                               O CS Vf) rH O
                               o r>» oi o o
                                                       03 "3" O O in
                                                       in rH 0-1 rH f-
                                                       o r~ «t< rn o

                                                       ooo o o
                                                                                                     CO
                                                                                                      •
                                                                                                     r»
                                                       it m ft.
                                                       Z  • Z
                                                          04
                                              vo

                                              rH
                                              in
                                                       OJ rH U1
                                                       vo cn
                                                       TS"









01
U
01
JJ
0)
H
4 CO


co en o oi in
rH rH OI OI OI
rH rH rH rH rH




ca

riJ
EH
ca

CJ
rH
g
EH
1
Z
0
z

S
3
c
01
•o
.a

rH
O












C
01
jj
01
C en
o c
££





•o
01
•a
e
CO
EH
Z

1
J
J
2
os
ca
CB
EH
O
Ol
a.
01
3 01
CO 'O
•H
rH rH
10 O
JJ CO
EH





                                                                                                                     o
               jj
                c
                Ol
                o

               I

                01   •
                en M
                10  JJ
               js  ta
                o  s
                0]  01
               •rl  JJ
               a  01
                   
                                                             (0  W
                                                             jj  ui     ai

                                                             rH  O 0) JJ

                                                             O  Mj3  E
                                                             CU CU (0  O
                                                                   rH  M
                                                             0) -a-n Cu
                                                             01  Ol (0
                                                             (0 jj > -a

                                                             M  01     M
                                                             U  M JJ  M
                                                             01 EH O  01
                                                             Q    Z ^*H
                                                                dP     01
                                                             jj m 10  c
                                                             O CO JJ  (0
                                                             Z    <0  M
                                                                 JJ M  M
                                                             01 -H 01  01


                                                             II     II   II

                                                             •K     m; *
                                                                   Z *
                                                                                                                              c
                                                                                                                              (0
                                                                                                                              6
                                                                                    VIII-76

-------
Recommended treatment for quartz mercury vapor lamp manufacturing
was not observed in-place.  However, recommended treatment is based
on a low volume lamp cleaning process which occurs at Plant 28086.

Estimated Cost of Recommended Treatment Systems

The determination of estimated costs for recommended treatment
system components is discussed in Section XIII of this report.
Tables 8-20 through 8-28 show the estimated costs for each of
the recommended treatment systems discussed previously for the
electric lamp subcategory.  Costs have been estimated for Levels
1, 2, and 3 recommended treatment for filament manufacture and
Levels 1 and 2 for fluorescent lamp manufacture.  The variations
in system costs resulting from changes in system flow rate are re-
presented by using three flow rates for filament manufacture and
two flow rates for fluorescent lamp manufacture.  The three fila-
ment manufacturer flow rates represent small, medium, and large
size facilities.  The two fluorescent lamp manufacturer flow rates
represent medium size facilities.  These treatment system costs
reflect complete installation of the recommended treatment systems
and do not account for treatment in-place at electric lamp faci-
lities.  Quartz mercury vapor lamp manufacture was observed at
one facility, Plant 28086.  Cost of treatment is presented for a
flow rate of 606 I/day (160 gpd).  Because the flow rates and
number of facilities manufacturing quartz mercury vapor lamps
are expected to be small, further costs for benefit analysis are
not presented.

BENEFIT ANALYSIS

This section presents an analysis of the industry-wide benefit
estimated to result from applying the three levels of treatment
previously discussed in this section to the total process waste-
water generated by the electric lamp subcategory.  This analysis
estimates the amount of pollutants that would not be discharged
to the environment if each of the three levels of treatment were
applied on a subcategory-wide basis.  An analysis of the benefit
versus estimated subcategory-wide cost for each of the treatment
levels will also be provided.

Industry-wide Costs

By multiplying the annual and investment costs of each level of
treatment at various flow rates by the number of plants in each
flow regime in the industry, subcategory-wide annual and invest-
ment cost figures are estimated (Tables 8-29 and 8-30).  These
figures represent the cost of each treatment level for fluorescent
lamp and tungsten filament manufacture contained within the electric
lamp subcategory.  This calculation does not make any allowance for
waste treatment that is currently in-rplace at electric lamp
facilities.
                             VIII-77

-------
co
CM
 •

VO
CO
vo
o
00
CM
CM
co
               in
               CM
00
in
oo
vo
vo
ro
               CM
               rH
               co
CO
o
co
      in
      CM
      vo
      r--
      ro
      co
rH
in
o
 •
CO
CO
!-)
m
CM
                                                  vo
co
co
r-
                                                           oo
 o
 CM
 CM
'r-t
 CO
CO
00
CO
VO
o
CO
VO
CO
in
CM
vo
 •
co
o>
o
r-
co
co
o
in
CM
 •
CM
CM
^r
co
CM
                                   oo
                                   vo
                                   CO
                                   r-
                                   vo
                                            in
o
o
o
co
vo
co
cr\
 •
o
rH
m
CM
o
in
CM
  o
en
in
co
co
CM
                        VIII-78

-------
           3
           ro
           «»
           vo
           •^<
           ro
                               OS
                         a\
      vo
      oo
C*    CM
CM    CA
en    vo
CM
                            in
                            in
                            in
                            CO
                            o
                    a\
                    CO
                    oo
                     •
                    PO
                    iH
                    VO
                    CM
                                                     •«*
                                                     vo
                                          ro
           O
           o
           o
           o
              oo
                    o
                    o
                                             CM
                            in
                            in
                            <*>
                            ro
oo
00
00
VO
o
00
VO
           Pi
ro
«*
vo
r*
8
                         oo
                         CM
     r^
     s
                               CM
                               r-
                                       m
                                       in
              in
              o>
              Cf\
              CM
                                 i
                   g
                   CM
 §
 oo
•a
                      VIII-79

-------
           m
           CM
           vo
           en
at
ao
                         CM
                         CM
CO
CM
m
                               in
      co
      in
                                        CTl
                                         •

                                        o
        o
        CM
                                             CO
                                             in
                                             o
in
m
vo
 •
co
in
o
           O

           8
           o
m
ao
03
                               CM
              o
              CO
                                                     in
                            in
                            ro
en
CM
 •
to
CO
V0
r-
CM
CO
           in
           CM
           to
           in
o^    ro
00    CM
r-    in

CM    en
VD    in
oo    oo
                         CM
                               m
              o\
              T
              en
                                       in
              en
              CO
                                             in
in
CM
vo
 •
CO
iH
in
                       VIII-80

-------
 00
 . •

 o
 in
o
o
o
o
o
CM
\O
O
  •
in
CM
in
CM
i-4
•
VO
vo
co
§
o
in
CM
CM
CM
00
vo
CM
<3\
00
CO
O
CO
O
CM
m
o
o
o
CM
o
o
in
•
•<*
£
en
s
  •
00
••a"
o

§
ro
            to
            CM
CM
i-t
CM
o
^
CM
o
o
            in
            p;
            vo
            p*
            vo
            i*
            CM
cn
o
r-
 •
CM
O
a\
in
CM
              CM
              m
              00
                •
              in
              o
              oo
                    CM

                    51
                      •
                    CM
      co
      i^
      CM
       •
      CM
      m
      CO
      en
10
oo
  •
in
iH
o
CM
CM
                                              oo
in
oo
                                              CM
o
rr
00
in
oo
CM
CT>
CM
               O
               in
vo
'sr
m
oo
              m
              in
              o
                    VIII-81

-------
CM
00
o
r-
g
o
o
o
            r—
            oo
 in
 vo
 en
                          CM
CM
CM
vo
                     CM
                     •-1
                     00
                     o
                     co
                                00
                                en
in    co
r-    vo
00    ^^*
 *     •
o    r»
00    i-t
en    •<*
oo    CM
oo

 •
r-4
in

r4
00
o
in
oo
CO
0%
 •
O
•«*
CM
CO
co
 r-
"oo
 vo
  •
 co
 co
 iH
 CM
 VO
 CO
                          CM
                          CO
                          co
                          in
      p-
      oo
      vo
       •
      vo
      CM
      *T
      CM
in
CO
  •
in
t^
oo
VO
CM
                                              OO
                                              s
                                              co
                                              CM
            3
            S
            00
                          CM
                          O
                          ON
                          co
                          CM
                                r-
                                co
                     o
                     CM
                                in
               in
               CM
co
co
CM
CM
co
                              00
                              CM
                              CO
                              CM
                    CM
                    CM
                                            O
                                            in
               CM
               CM
               CM
                        VIII-82

-------
            in
            r^
            CO
             •
            CM
            «3<
            O
            O
            in
            CO
 CN   CN
 CN   VO
 o   m
 in    o
 o\    o
 CN    r-
               oo
         r-
         vo
               CN
               CN
               vo
               \J3
               00
               o
               o
               CN
                       o
                       in
            o
            s
            r-
o
s-
fO
ro
           in
           r-
           CO
             •
           CN
           rf
           00
           CN
10
<7>
  •
vo
s
CN
VO
o
                          a
CN

s
 •
CO
vo
in
oo
vo
 oo
 oo
 CN
               in
                                                      vo
                                                      CTl
                       r-
                       oo
                                                      CN
•**
 00
                                        vo
      CN
      r-
                    ro
                    rH
                    oo
oo
                        VIII-83

-------
           04
           \O
           in
            04
            o
            f-
            m
              10
              r~-
              r--
                          co
                          co
                          CO
                                OJ
              oo
              
-------
                        oo
                        in
                        in
                        <&
                        CO
                        CO
                        vo
               r-
               co
               CO
                •
               oo
               >£>
               o

               a
o
o
o
ro
t-
r-
oo
tn
r-
oo
 •
oo
m
oo
in
r-
                                                           01
oo
-31
cr>
                                                                    o
                                                                    in
                        in
                        ro
                                            CO
                       o
                       o
                       in
                                      m
                                      cr>
                                      M
                     O

                     O
                     CO
                     00
         O
         VO
         vo
                                                                    in
               o
               en
                                                                    in
ffi
            CN
            CO
             e
            O
            t-

            c;
            o
            o
            o
            o
            o
                       CO
in
in
                       CM
                                      oo
               I'-
               ve
               M3
               in
                     o
                     o
                     o
                     oo
                                            oo
        in
        r»
        oo
        00
        cr>
                                                     in
                                                     r-
                                                           CN
              o
              s
                       OO
                       in
                                                                   oo
                                   VLIl-85

-------
in
r-
o
vo
          CO
          in
          CM
          CM

          K
n
CM
m
 •
CO
CM
CO
•<*
ro
in
       •in
                                    OJ
                                          o
                                           •
                                          o
                     CM
                     in
                     o
                      VTII-86

-------
                              TABLE 8-29

                     Industry-Wide Cost Analysis


                          Fluorescent Lamps


                                         Level 1      Level 2

Investment (Thousands of Dollars)        2463.831     2156.814

Annual Costs (Thousands of Dollars)

   Capital Costs                          207.739      181.851
   Depreciation                           492.766      431.363
   Operation and Maintenance              193.167      179.531
   Energy and Power                        14.856       10.567

Total Annual Cost (Thousands of           908.528      623.781
   Dollars)

Discharge Flow (million I/year)           251.597        0
                              VIII-87

-------
                         TABLE 8-30

                Industry-Wide Cost Analysis


                     Tungsten Filaments
Investment (Thousands
  of Dollars)

Annual Costs (Thousands
   of Dollars)
Level 1

3860.397
Level 2

4537.570
Level 3

5982.878
   Capital Costs          325.491
   Depreciation           772.079
   Operation and          286.747
   Maintenance
   Energy and Power        23.175

Total Annual Cost (Thou-
  sands of Dollars)      1407.792
Discharge Plow
   (million I/year)
 557.531
              382.588
              907.514
              356.553

               26.177
1672.832

 557.531
              504.447
             1196.575
             1187.971

               73.825
2962.818

  83.630
                                   VIII-88

-------
Industry-wide Cost and Benefit

Tables 8-31 and 8-32 present  the  estimate  of  total  annual  cost
to the electric lamp subcategory  to  reduce pollutant  discharge.
This table also presents the  benefit of  reduced  pollutant  discharge
for the electric lamp subcategory resulting from the  application
of the three levels of recommended treatment.  Benefit  was
calculated by multiplying the estimated  number of gallons  discharged
by the subcategory times the  performance attainable by  each  of
the recommended treatment systems as shown in Table 8-18.
Values are presented for each of  the selected subcategory  pollutant
parameters.

The column "Raw Waste" shows  the  total amount of pollutants  that
would be discharged to the environment if  no  treatment  were  employed
by any facility in the industry.  The columns "Levels 1,2, and 3
treated effluent" show the amount of pollutants  that  would be dis-
charged if any one of these three levels of treatment were applied
to the total wastewater estimated to be  discharged  by the  electric
lamp subcategory.

The total amount of wastewater discharged  from each level  of
treatment is also presented in this  table  to  indicate the  amount
of process wastewater to be recycled by  each of  the three  levels
of treatment.  Process wastewater recycle  is a major  step  toward
water conservation and reduction  in  pollutant discharge.
                             VIII-89

-------
Parameter

Flew (million I/year)

114.  Antimony
118.  Cadmium
122.  Lead
      Tin

Total Suspended Solids

Total Annual Cost (thou-,
   sand dollars) ,
                                     TABLE 8-31

                                   Cost and Benefit

                                  Fluorescent Lamps
                           Raw Waste
                           (kg/year)
251.597
               Level 1 Treated
               Effluent
               (kg/year)
251.597
115.231
77.403
34.180
5528.592
35978.371

12.580
3.019
12.580
31.701
4478.427
908.528
                      Level 2 Treated*
                      Effluent
                      (kg/year)
                                         0
                                         0
                                         0
                                         0
                                       623.781
* =* Level 2 Pollutant Discharge Eliminated With 100% Reuse Of Treated
    Process Wastewater
                                  VIII- 90

-------
             S
s
     o
     CO
     vo
      •
     CO
     00
                  O 00 VO CO
                  CM r«» r-«»
                  en vo r- oo
                                      vo CO-
                                      CM en
                                              er\
                                              o
                         o vo o CM
                            CM co
00
rH
OO
                               VOiH   CM   CM
                               iHCM   VO   VO
                                      O   Cn
                         co CN i-s vo   vom
                         en m !*» tn   ooo
                         •H eo in en rf in CM
                           •  •  •  « 2S  •  •
                         VD I~- in 00   iHOO
                            r^ O fH   r-f*
                            iH CM      rHiH
                               oo
                               o
                                            CM
                                            ro
                                            00
                                             *
                                            CM
                                            r-
                                            vo
1
      iU
      \*
seat
                    in
                    in
                    m
               *
               *
          o oo o r~- in   CM    CM
          en o co r*"" c*^   in    in
          vocnoooom 
-------

-------
                           SECTION IX

            ELECTRON TUBE SUBCATEGORY DISCUSSION
INTRODUCTION

This discussion of the electron tube industry consists of the
following major sections:

          Products
          Size of the Industry
          Manufacturing Processes
          Materials
          Water Usage
          Production Normalizing Parameter
          Waste Characterization and Treatment in Place
          Potential Pollutant Parameters
          Applicable Treatment Technologies
          Benefit Analysis

Data contained in this section were obtained from several sources.
Engineering visits were made to five plants within  the subcategory.
Wastewater samples were collected from three of  these five  facili-
ties.  A total of thirty-six electron tube manufacturing plants
were contacted by telephone.  A literature survey was also  conducted
to ascertain differences between types of electron  tube products, pro-
cess chemicals used, and typical manufacturing processes.

PRODUCTS

Electron tubes are devices  in which electrons or ions are con-
ducted between electrodes through a vacuum or ionized gas within
a gas tight envelope which  may be glass, quartz, ceramic, or
metal.  Electron tubes depend upon two basic phenomena for  their
operation.  The first is the emission of electrons  by certain
elements and compounds when the energy of the surface atoms is
raised by the addition of heat, light photons, kinetic energy of
bombarding particles, or potential energy.  The  second phenomenon
is the control of the movement of these electrons by  the force
exerted upon them by electric and magnetic fields.  The three
types of electron tubes which are to be discussed in  this section
are:

          Receiving type electron tubes
          Television picture tubes
      .    Transmitting type electron tubes

Receiving type electron  tubes  (Reference Figure  9-1)  are noted
for  their low voltage and low power applications.   They are used
in radio and television  receivers, computers, and sensitive
                            IX-1

-------
                     exhaust tip
                getter
   screen grid
suppressor grid
 glass-metal seal
                                  base pin
                 FIGURE  9-1





               RECEIVING TUBE
                     IX-2

-------
control and measuring equipment.  Structurally, electron tubes
are classified according to the number of electrodes they contain.
The electrodes are usually made of nickel mounted on a base
penetrated by electrical connections and are encapsulated in a
glass or metal envelope which is evacuated.  The tube is evacu-
ated to 10  mm of mercury and the electrodes and/or the envelope
is heated to remove absorbed gases.  The passage between the
tube and pumping system is sealed off.  A getter material (usually
magnesium, calcium, sodium, or phosphorus) previously introduced
in the evacuated envelope is flashed.  Flashing occurs by applying
an electric current to the electrodes of the tube for several
seconds.  The getter material condenses on the inside surface
and absorbs any gas molecules.  The result is that the vacuum
within the tube becomes progressively stronger until an equili-
brium value of 10  mm is reached.

Television picture tubes function by modification of a horizontal
scanning of high velocity electrons striking a luminescent
surface.  The number of electrons in the stream at any instant
of time is varied by electrical impulses corresponding to the
transmitted signal.  A typical color television tube is shown in
Figure 9-2.

The tube is a large glass envelope.  A special composition of
glass is used to minimize optical defects and to provide electri-
cal insulation for high voltages.  The structural design of  the
glass bulb is made to withstand 3-6 times the force of atmos-
pheric pressure.  The light-emitting screen is made up of small
elemental areas, each capable of emitting light in one of the
three primary colors (red, green, blue).  An electron gun for
each color produces a stream of high velocity electrons which is
aimed and focused by static and dynamic convergence mechanisms
and an electro-magnetic deflection yoke.  An aperture mask
behind the face of the screen allows phosphor excitation according
to incident beam direction.  Commercially available aperture
mask tubes are manufactured in a number of sizes.

Transmitting type electron tubes are characterized by the use
of electrostatic and electromagnetic fields applied externally
to a stream of electrons. There are several different types  of
transmitting tubes.  They generally are high powered devices
operating over a wide frequency range, are larger and struc-
turally more rugged than receiving tubes, and are completely
evacuated.  Figure 9-3 is a diagram of a klystron tube, which is
typical of a transmitting type tube.  In a klystron tube, a
stream of electrons from a concave thermionic cathode is focused
into a smaller cylindrical beam by the converging electrostatic
fields between the anode, cathode, and focusing electrode.   The
beam passes through a hole in the anode and enters a magnetic
field parallel to the beam axis.  The magnetic field holds the
beam together, overcoming the electrostatic repulsion between
electrons.  The electron beam goes through the cavities of the
klystron, emerges from the magnetic field, spreads out and is
                              IX-3

-------
               mask
                  three
                 electron
                  beams
              special
           glass bulb
     static and dynamic
       convergence
         of three
      electron beams
        (magnetic)
  base
/•onnections
      three
     electron
      guns
      electromagnetic
       deflection yoke
high-voltage contact
                fluorescent light-emitting
                   three-color screen
                    (with aluminum
                    mirror backing)
              FIGURE 9-2


 COLOR  TELEVISION PICTURE TUBE
                      IX-4

-------
    collector
fully bunched
    electrons
     input
    coaxial
 transmission
     line
      high
    voltage
    supply
    spreading
    electron  beam

      magnetic polepiece

           output catcher
        ^s cavity

             output
             waveguide

             output
             coupling ins

             antibunch

             electron bunch
             forming

             intermediate
             cascade cavity

             iron magnet
             shell

             electromagnet
             solenoid coil

             input buncher
             cavity

             anode
            converging
            electron beam

          focus electrode

        insulating bushing

     thermionic cathode

  heater filament

heater leads
                             FIGURE  9-3
                       TRANSMITTING TUBE
                                 IX-5

-------
stopped  in  a  hollow  collector where  the  remaining  kinetic  energy
pf  the electrons  is  dissipated  as  heat.

The electron  tube  subcategory includes products  which  were
classified  under  SIC 3671,  Electron  Tubes, Receiving Type;  SIC
3672, Cathode Ray  Picture Tubes; and SIC 3673, Electron Tubes,
Transmitting  Type.   These industries have been included under
SIC 3671 by the Department  of Commerce for their Census of
Manufactures  for  the year 1977.  The three SIC groups  have been
classified  together  because of  the declining  size  of the industry,
The major products of the electron tube  subcategory are as
follows:

      .    Receiving  Type Electron  Tubes

          Television Picture Tubes
               -     Color Picture  Tubes
               -     Black and White  Picture Tubes
               -     Rebuilt Picture  Tubes

      .    Transmitting Type Electron Tubes
               -     Power and Special Tubes
                         Vacuum Tubes
                         Gas and Vapor Tubes
                         Klystrons
                         Magnetrons
                         Traveling Wave  Tubes
               -     Light Sensing  Tubes
                         Camera Tubes, Photoemissive and
                         Photoconductive
                         Image Intensifiers and  Converters
                         Photomultipliers
               -     Light Emitting Devices
                         Storage Tubes
                         Cathode-Ray Tubes, Industrial and
                         Military

SIZE OF INDUSTRY

This discussion estimates the number of  plants and the number of
employees for plants  engaged in the  manufacture  of electron
tubes, SIC  3671.

Number of Plants

It is estimated that  143 plants are  engaged in the manufacture of
electron tubes.  This estimate is  from the Department of Commerce
1977 Census of Manufactures (Preliminary Statistics).
                             IX-6

-------
Number of Employees

It is estimated that 27,200 production employees are engaged in the
manufacture of electron tubes.  This estimate is from the Department
of Commerce 1977 Census of Manufactures  (Preliminary Statistics).

Production Rate

The total number of electron tubes produced is not available.  How-
ever, partial information was obtained from the Department of Commerce
1977 Census of Manufactures.  This information is summarized in,Table
9-1.

MANUFACTURING PROCESSES

Discussion of electron tube manufacturing is arranged by the primary
electron tube types:  Receiving, Television Picture, and Transmitting.

Receiving Tube Manufacture

The manufacture of a receiving tube is similar to that of a transmit-
ting tube and is depicted schematically  in Figure 9-4.  Raw materials
required for receiving tube manufacture  include glass envelopes,
kovar and other specialty metals, tungsten wire, and copper wire.
The metal parts are punched and formed,  chemically cleaned, and
electroplated with copper, nickel, chromium, gold, or silver.  The
iron or nickel cathode is coated with a  getter solution.  The metal
pacts are hand assembled into a tube mount assembly.  Glass parts for
the tube base are cut and heat treated.  Copper lead wires are sealed
in the "glass mount" machine.  The glass mount piece is then heat
treated by baking in an oven.  The metal tube mount assembly is then
hand welded to the glass mount piece.  The upper glass bulb is rinsed.
On a "sealex" machine, the bulb is evacuated, sealed, and the glass
extensions are cut off.  The glass exterior is rinsed and the com-
pleted tube is aged, tested, and packaged.

Television Picture Tube Manufacture

The manufacture of a television picture  tube is a highly complex,
automated process as depicted in Figure .9-5.  Television picture
tubes comprise four major components:  the glass panel, steel aper-
ture mask, glass funnel, and the electron gun mount assembly.  The
glass panel is the front of the picture  tube through which the picture
is viewed.  The steel aperture mask is used to direct the electron
beam to the phosphor coated glass panel.  The glass funnel is the
casing which extends back from the glass panel and is the largest
component of the picture tube.  The mount assembly is attached to
the funnel and contains the electron gun and the electrical base
connections.  Most manufacturing operations utilizing a chemical
process will be accompanied by one or several water rinses.

Manufacture of a television picture tube begins with a steel aperture
mask degrease.  Steel aperture masks are produced at other facilities,
received by the picture tube manufacturer, formed to size, solvent
degreased, and oxidized.  The steel aperture masks are inserted
within the glass panel which is commonly referred to as a panel-mask
"mate".  The panel-mask mate is annealed and the mask is removed.
                              IX-7

-------
                            TABLE 9-1
             PRODUCTS AND PRODUCT CLASSES, QUANTITY
             AND VALUE OF SHIPMENTS BY ALL PRODUCERS
                    0? ELECTRON TUBE PRODUCTS
SIC
3671
 Receiving Tubes, All
   Types (except Cathode-
   Ray Tubes)
 Receiving Tubes, Not
   Specified by Kind
                              Millions of Tubes
                               Per Year (1977)
                                    90.4

                                     N/A
     Television Picture Tubes
       Color, New                    7.7
       Color, Rebuilt; Black and
         White, New; Black and
         White, Rebuilt              5.6

     Television Picture Tubes,
       Not Specified by Kind        N/A

     Transmitting Tubes
       Power and Special Tubes
         Vacuum Tubes              2151.3
         Gas and Vapor Tubes       8223.0
         Klystrons                   51.9
         Magnetrons                 138.2*
         Traveling Wave Tubes        37.8

       Light Sensing Tubes
         Camera Tubes, Photoemissive
           and Photoconductive       273.6
         Image Intensifiers and
           Converters                 45.8
         Photomultipliers            310.7

       Light Emitting Devices
         Storage. Tubes                42.3
         Cathode Ray Tubes,
           Industrial and Military   717.0

       Other Special Purpose Tubes     X
                                                   Value in
                                              Millions of Dollars
                                                    (1977)
 92.3

 13.6


513.9


 77.1


  1.4
                                                     74.7
                                                     33.7
                                                     48.1
                                                     56.1
                                                     90.3
                                                     34.9

                                                     30.8
                                                     20.3
                                                     18.3

                                                     61.2

                                                     76.1
N/A
X
  Not Available
  This number does not include pulsed, fixed, and tunable
  magnetrons.
  Data Not Collected
                              IX-8

-------
                                 Metal Components
    Glass Tubes
         J
                                      Metal
                                      Form


ad
res
1
' m.





Glass
Cut
t
Anneal
t
Glass
Mount
Machine



Catl
1
aet
Co



a



iod
f
ter
at

'





e

--*-







Parts
Clean
t
Electroplate
t
Tube Mount
Assembly


Weld
Components
                                     Glass Tube
                                        Rinse
                                      Exhaust &
                                        Seal	
                                     Glass Tube j_
                                        Rinse .  I
                                         I
                                      Age  &
                                       Test
                                        Ship
                                         T
'•—**"= Denotes Water
          Plow Path
                                     Figure 9-4

                               RECEIVING TUBE MANUFACTURE
                                 IX-9

-------
  PANEL HASH
                                      Glass  Panels
Aperture Masks

       J
    Mask
   Degrease
                                       Panel and
                                       Mask Mace
                      Rejected.
                       Panels
PHOTORESIST APPLIGYTICN
	
—
—
Anneal
1
Panel
i

Mash
1
1 Photoresist
Application
i
Panel
Mask

and
Hate
Mask
—
!

                                                                                               PICTURE TUBE RECLAIM
                                      Spent
                                   Picture Tubes
                                                                                                     Eanel-FunneJl
                                                                                                       Defrit   I
HIOSHOR APPLICATION
Rejected"
Panels

—
Light
Exposure


1 Phosphor-
Application
f
Panel and
Mask Mate

—
Mask


                                                                Mask
'


Panel
Clean


Panel-Mask
Separation



*

_J
—El
Mask |_
Clean |




inel
can
                                                                                                    Return to
                                                                                             Picture Tube Manufacture
                                                                                                    .».     Electron Gun
                                                                                     Figure 9-5

                                                                         TELEVISION PICTURE TUBE MRNUFACTURE

-------
The  glass  panels  proceed  to  panel  wash.   Panel  wash includes  several
hydrofluoric-sulfuric  acid glass washes  and  subsequent  water  rinses.
The  panels  are  then  sent  to  photoresist  application.  The glass
panels  are  coated  with a  photoresist  and the masks  are  mated  to  the
panel.  The panel  is then exposed  to  light through  the  mask.   The
mask is removed,  and the  panel  is  developed.  The panel is graphite
coated  and  cleaned in  a hydrofluoric-sulfuric acid  solution.   The
panel at this point  has surrounding clear dots  onto which the
phosphors  will  be  deposited.  The  panels then proceed to phosphor
application.  The  panels  undergo another photoresist application.
Phosphors  are then deposited  onto  the panels applying each of the
three phosphor  colors  to  their  respective clear dots on the panel
matrix.  The panel and mask  are mated and the panel is  exposed to
light.  The mask  and panel are  separated, and the panel is developed,
lacquer coated  to  seal the phosphors,  aluminum  is vacuum-deposited
to enhance  reflection,  the mask is mated with the panel,  and  the
panel is cleaned.

Glass funnels are  cleaned and coated  with graphite.  Electron shields
are  degreased arid  attached to the  panel.  Panel-mask assemblies
and  glass  funnels  are  then joined  together using a  heat-fused lead
frit, followed  by  annealing.  The  electron gun  mount is cleaned,
aged, and  heat  sealed  to  the  base  of  the funnel.  At this stage  the
assembled panel, funnel,  and  mount are termed a "bulb."  The  bulb  is
exhausted,  sealed, and aged  by  applying  current to  the  cathode.
The  tube is tested, an external graphite coating is applied,  and an
implosion band  is  secured to  the tube.   The  tube is retested  before
shipment to facilities that  assemble  television sets.

Panels  may  be rejected upon  inspection at many  points along the
manufacturing process.  If completely rejected,  panels  may be sent
back to the panel  wash at the beginning  of the  manufacturing  sequence.
If panels need  only to be "rescreened",  they are returned to  the
phosphor application process.

In addition, there may or may not  be  a picture  tube salvage area to
reclaim spent picture  tubes.  Wet  processes  include a panel-funnel
acid defrit, acid  cleaning of panels  and funnels, and cleaning of
aperture masks.  These reclaimed components  are returned  to process
for  reuse.

Transmitting Tube Manufacture

The  manufacture of a typical  transmitting tube  presented  schematically
in Figure 9-6 is typified by  a  magnetron.  Intricately  shaped and
machined copper and steel parts are cleaned  and rinsed.   Some of
these parts are then electroplated using  materials  such as copper,
gold, and silver.  Assembly of  the electron  tube is  generally a
manual operation.  The  electron tube  components consist of the metal
parts, a tungsten  filament, a glass window,  and a glass tube.  The
components  undergo a number of  soldering, brazing,  welding, heat
treating,  and polishing operations.   A significant  energy user is
the  heat treating  area with associated non-contact  cooling water.
The  assembled electron tube undergoes  an extensive  series of  elec-
trical and  mechanical  testing procedures  and  an aging process before
final shipment.   There  are specialized types  of transmitting  type
                               IX-11

-------
                               Metal Components
                                    Metal
                                    Form
                                    Parts
                                    Clean
Glass
Tube
Glass   Filament
Window
ube    window     I
I        I        I
                                       i
                                 Electroplate
                                       I
                                    Solder
                                     Braze
                                     Weld
                                     Anneal
                                       I
                                    Evacuate
                                    & Seal
                                    Polish
                                     Age &
                                      Test
                                       I
                                     Ship
                                       t
         Denotes Water
           Flow Path
                                  Figure 9-6
                           TRANSMITTING TUBE MANUFACTURE
                                  IX-12

-------
electron tubes, such as image intensifiers, that are produced in a
manner similar to that of a magnetron.  However, there are two
wet processes utilized in addition to those depicted in Figure 9-6.
These additional wet processes include alkaline cleaning-rinsing
and alcohol dipping-rinsing of ceramic or glass envelopes brazed
to metal; and acid cleaning of glass tube bodies.  Because these
processes are known to exist at only one facility, they are not
included in Figure 9-6 as processes common to most transmitting
type electron tube manufacture.

MATERIALS

The materials used to manufacture all types of electron tubes
(SIC 3671) are classified as raw materials and process materials.
The raw materials are conductors, wire leads, encapsulating mater-
ials, inert gases, glass funnels and panels, masks, photosensitive
materials, phosphors, and various solders and pastes.  Raw materials
and process materials consist of the following:

          Conductors - Copper and steel basis materials with
          various plated surfaces such as copper, nickel, gold,
          silver, and chromium are used extensively in electron
          tube manufacture.  These materials are used because
          they are good conductors and/or supporting mediums,
          are easily shaped and formed, and are most cost
          effective.

          Leads - Copper and nickel are the most common material
          for electron tube leads.  Often the leads are a simple
          extension of one of the conducting electrodes.

          Encapsulating materials - Glass, ceramics, and various
          metals such as steel are used for electron tube 'encap-
          sulating materials.  These materials provide overall
          structural strength and assure integrity of the applied
          vacuum or gas filling.

     .    Inert gases - Electron tubes may either be filled with
          special inert gases such as neon, argon, and krypton
          or completely evacuated.  Either method provides a
          dielectric medium of a predetermined resistance to the
          flow of electrons.
         ! •    ' •
          Glass funnels and panels - Special glass is used to
          enhance optical and electrical characteristics while
          maintaining reasonable strength with minimum weight in
          television picture tubes.

          Mask - The steel aperture mask is placed behind the
          panel and is used to allow electron beams to strike
          the phosphors selectively on the panel in a color
          television picture tube.
                              IX-13

-------
Photosensitive materials - These materials are used to
prepare the glass surface for phosphor application.
The solution commonly contains dichromate, an alcohol,
and other proprietary substances.  Developer solutions
often are composed of hydrogen peroxide and/or deion-
ized water.

Phosphors - Phosphors are the heart of color tele-
vision picture tube performance.  Common phosphor
materials include cadmium sulfide, zinc sulfide,
yttrium oxide, and europium oxide.  Many proprietary
processes have been observed in applying these mate-
rials as red, green, and blue phosphors to the glass
panel.  Application of the phosphors themselves and
many of the associated operations produce wastewater
discharges containing priority and other pollutants.

Protective Coatings - Toluene based lacquer and silicate
coatings are commonly applied over the phosphor coatings
in picture tubes.  These processes seal the phosphors
in place protecting them from damage.

Graphite coatings - These materials are applied to
inner surfaces of the panel and funnel to prevent
reflection within the picture tube.

Solders - The assembly of the picture tube is a highly
mechanized process whereby the four basic parts of the
picture tube are held together with various solders.
The most prominent solder used in picture tube manu-
facture contains lead oxide and is used to fuse the
glass panel and funnel together.

Process materials - Acids, plating solutions and
various types of solvents are used in the manufacture
of all types of electron tubes.  Acids, such as
hydrofluoric, hydrochloric, sulfuric, and nitric, are
used primarily in cleaning and conditioning of metal
parts and glass encapsulating materials.  A number of
these metal parts are electroplated with a variety of
highly conductive metals such as gold, silver, copper,
nickel, and chromium.  Solvents such as methylene
chloride and trichloroethylene are used in a number of
clean-up operations for receiving and transmitting
tubes.  Color picture tubes use solvents, such as
methylene chloride, trichloroethylene, methanol,
isopropanol, acetone, and polyvinyl alcohol.  These
solvents are used primarily in cleaning processes such
as aperture mask degreasing as well as phosphor appli-
cation and development steps.
                        IX-14

-------
WATER USAGE

Process water  is used  in  solutions  and  rinses  associated  with
electroplating of anodes/  cathodes,  and grids.  Water  is  also
used to wash glass and  ceramic  tube bodies  both before and  after
seating to the base, or at the  conclusion of the  manufacturing
process.

Receiving and  transmitting electron tube manufacturing processes
produce wastewater discharges primarily through metal  finishing
operations which are covered under  the  Metal Finishing Category.
A number of ancillary operations such as deionized water  back-
wash, cooling  tower blowdown, and boiler blpwdown contribute
sizeable discharge rates  compared to metal  finishing operations.
                                                     *
In addition, there are  some isolated instances of plants  manu-
facturing specialized transmitting  type electron  tubes such as
image intensifiers and  photomultipliers that require process water.
Alkaline cleaning and acid etching  of glass-metal and  ceramic tube
components discharge process wastewater as  a result of alkaline
and acid bath dumps and their associated water rinses.  These wet
processes are similar to  several found  in television picture tube
manufacture.  There is  also a glass tube rinse or rinses  which
conclude the manufacture  of receiving tubes.  These are intended to
remove surface particutates and dust deposited on the  tube  body
during the manufacturing  process.

Wastewater producing operations for manufacture of television picture
tubes and other types of  cathode ray tubes  are unique  and sizeable.
Process wastewater sources include  both bath dumps and subsequent rin-
sing associated with:   glass panel  wash, aperture mask degrease,
photoresist application,  phosphor application, glass funnel and
mount cleaning, and tube  salvage.   In addition, there  is  process
wastewater at those facilities manufacturing aperture  masks by a
chemical etching process  which  is also  followed by rinsing.
Segregation of process  wastewater to obtain flow  rates and  dispo-
sition is very difficult  because of the proprietary nature  and large
size of picture tube manufacturing  facilities.

PRODUCTION NORMALIZING  PARAMETERS

Production normalizing  parameters are used.to relate the  pollutant
mass discharge to the production level  of a plant.  Regulations
expressed in terms of this production normalizing parameter are
multiplied by the value of this parameter at each pla'nt to  deter-
mine the allowable pollutant mass that  can  be discharged.   However,
the following problems  arise in defining meaningful production nor-
malizing parameters for electron tubes:

          Size, complexity and other product attributes affect
          the amount of pollution generated during manufacture
          of a unit.
                              IX-15

-------
.    Differences in manufacturing processes for the same
     product result in differing amounts of pollution.

.    Lack of applicable production records may impede
     determination of production rates in terms of desired
     normalizing parameters.

Several broad strategies have been developed to analyze applicable
production normalizing parameters.  They are as follows:

     .    The process approach - In this approach, the production
          normalizing parameter is a direct measure of the produc-
          tion rate for each wastewater producing manufacturing
          operation.  These parameters may be expressed as sg.m.
          processed per hour, kg of product processed per hour, etc.
          This approach requires knowledge of all the wet processes
          used by a plant because the allowable pollutant discharge
          rates for each process are added to determine the allowable
          pollutant discharge rate for the plant.  Regulations based
          on the production normalizing parameter are multiplied by
          the value of the parameter for each process to determine
          allowable discharge rates from each wastewater producing
          process.

          Concentration limit/flow guidance - This strategy limits
          effluent concentration.  It can be applied to an entire
          plant or to individual processes.  To avoid compliance
          by dilution, concentration limits are accompanied by
          flow guidelines, in turn, are expressed in terms of the
          production normalizing parameters to relate flow discharge
          to the production rate at the plant.

Discussion of production normalizing parameters for the electron
tube subcategory will be restricted to television picture tubes.
Other types of cathode ray tubes and electron tubes have wet
processes other than meta finishing operations.  These wet
processes are also common to those found in television picture
tube manufacture.  However, they do not have manufacturing
operations that are as diverse or require as much process water
as those involved in television picture tube manufacture.
Therefore, a discussion of television picture tubes will encom-
pass wet processes common to other electron tube manufacture.

Potential candidates for production normalizing parameters for
television picture tube manufacturing include surface area of
product processed, number of picture tubes processed, and amount
of process chemicals consumed.  Surface area processed has been
determined to be the best production normalizing parameter for
picture tube manufacturing.

Area Processed

Three picture tube components use wet manufacturing processes:
glass panels, glass funnels, and steel aperture masks.  There are
three wet processes directly involved with glass panels:  panel wash,
photoresist application, and phosphor application.  All of these wet


                              IX-16

-------
 processes have associated rinses.  The pollutant discharge from each
 of these three wet processes is directly related to the surface area
 of the glass panel.

 Aperture masks, used in conjunction with the panel to produce a
 visual image, are manufactured by a chemical etching and rinsing pro-
 cess,  commonly employing ferric chloride.  The aperture masks are
 subsequently detergent degreased and rinsed at the tube assembly plant.
 Every  glass panel processed has an accompanying aperture mask
 which  has the same surface area as the panel.  Thus, the mass of
 wastewater pollutants resulting from aperture mask manufacture
 is proportional to the panel area.

 Pollutant discharge from the glass funnel washes and rinses do not
 directly reflect the surface area of the glass panel.   However,
 there  is a specific funnel for every panel size, so that the sur-
 face areas of the panels and funnels are in direct proportion to
 each other.

 Tube salvage is an additional operation observed at two picture
 tube plants.   Tube salvage uses wet processes that have pollut-
 ant mass discharges that reflect the surface area of the glass
 panels.   Expended picture tubes are separated into panel and
 funnel by a nitric acid defritting and rinsing process.  This
 process  breaks the bond holding the funnel to the panel.  This
 bonded area is a function of the circumference of the  glass panel,
 and is thus  in proportion to its surface area as well.   Other tube
 salvage  wet processes are:   stripping the funnel and panel surface
 coatings in a sodium hydroxide solution; glass panel and funnel
 hydrofluoric  acid cleaning and aluminum oxide or iron  oxide buf-
 fing;  and aperture mask cleaning in a morpholine solution.   All
 of  these processes have associated water rinses.  The  amount of
 material removed,  and thus the pollutant mass discharged,  is in
 direct proportion to the surface area of the panel.

 The manufacture of transmitting electron tubes such as  image inten-
 sifiers  and photomultipliers use wet processes that discharge waste-
 water  pollutants  at a rate that is directly related to  surface area.
 The inner glass or ceramic envelope is alkaline cleaned, water rinsed,
 alcohol  dipped,  and water rinsed.   The outer glass tube body is acid
 cleaned  and rinsed.   In both cases, the entire surface  area of the
 component is  processed.   Surface area of each electron  tube processed
 together with a production rate yields a total surface  area
 processed.

 Number of  Picture  Tubes Processed

As  in  lamp manufacturing,  the  number of units produced  cannot stand
 alone  as  a production normalizing  parameter because  of  varying pro-
duct sizes and  types  which  affect  the pollutant mass discharged.
However, when the  number of  units  produced  is used in conjunction
with the processed  area for  each picture tube type*  a total processed
area is  easily  determined  for  use  in calculating allowable  mass
discharge.
                               IX-17

-------
Amounts of Process Matecials and Chemicals Consumed

Process chemical usage varies considerably for picture tube manufacture,
In particular, photoresist and phosphor applications have formulations
for process materials and chemicals in accordance with individual
plant specifications and types of tubes produced.  One example of
process chemical variation is the different phosphors used for green
cathode-ray tubes, black and white picture tubes, and color picture
tubes.  In addition, both the composition and consumption of both
photoresist and phosphors is considered proprietary.  Thus, no direct
correlation can be made between pollutants discharged and process
materials and chemicals used, which eliminates process materials
and chemicals as a production normalizing parameter.

WASTE CHARACTERIZATION AND TREATMENT IN PLACE

This section will present the sources of waste in the electron tube
subcategory and sampling results of this wastewater.  The in-place
waste treatment systems will also be discussed and effluent sample
data from these systems will be presented.

Process Descriptions and Water Use

There are ten wet processes used by the electron tube industry.
Seven of the wet processes are characteristic of television
picture tube and other types of cathode ray tube manufacture.
Other cathode ray tube manufacture employs many but  not  all of
those wet processes found in television picture tube manufacture.
Therefore, discussion of wet processes for these two product
types will be limited to television picture tube manufacture.
Two of the three remaining wet processes are known to exist for
transmitting type electron tube manufacture.  The third  remaining
wet process is known to exist for receiving type electron  tube
manufacture.  The wet processes are:
Television Picture Tubes

   Panel Wash and Rinses
.  Aperture Mask Degrease  and
     Rinses
.  Photoresist Application and
     Rinses
   Phosphor Application and Rinses
   Funnel and Mount  Cleaning and  Rinses
   Tube Salvage and  Rinses
   Aperture Mask Formation and  Rinses
Transmitting Electron Tubes

   Acid Etch and Rinses
   Alkaline Clean and
     Rinses

Receiving Electron Tubes

   Glass Tube Rinse
The  electron  tube  manufacturing  processes  that employ water in
their  operations are  described  below.   Wastewater generation
depends  upon  product  type,  production  rate,  size  of facility,.
aad  degree  of automation.   Table 9-2 presents product type, wasfce-
vater  producing manufacturing processes,  volume of water used,  and
number'of employees for those plants contacted within the electron
tube industry.
                               IX-18

-------
                      M   ^>4   **4 I
                                 a-
                                 (N
                               I
  I   £
  (3   -i
  -i   o
                                                 CM
                                                 OI
                                                     IX-19

-------
Television Picture Tube Processes -  Picture tube manufacturing is
a highly automated operation involving .many water consuming processes.
Picture tubes consist of four major components:  the glass panel,
steel aperture mask, glass funnel, and cathode ray tube mount assembly,

The manufacture of television picture tubes is a highly complex pro-
cess.  Discrete wet process water flow rates at picture tube
facilities were unobtainable.  However, water usage for the produc-
tion of aperture masks was obtained.  The following process descrip-
tions discuss wet operations involved in the manufacture of picture
tubes as observed at two plants, Plant 30172 and Plant 11114.  The
manufacture of aperture masks which was observed at a third plant,
Plant 36146, is also discussed.

Panel Wash - Glass panels are the front glass section of a pic-
ture tube through which the picture is viewed.  The panels are
cleaned in a hydrofluoric acid-sulfuric acid solution.  This
prepares the glass for photoresist application.  Process water
is used for rinsing after each acid cleaning step.  High concen-
trations of acids and fluorides result from this process.

During the manufacture of television picture tubes, the panels are
inspected at various points along the process sequence.  A percen-
tage of panels are rejected and returned to the initial panel wash
to be reprocessed.  Therefore, pollutants generated at panel wash
also include pollutants typically found in wastewater from subse-
quent photoresist and phosphor applications.

Aperture Mask Degrease - Steel aperture masks are used in direc-
ting the electron beam from the cathode to the panel for use
both in photoresist development and eventually for phosphor
excitation.  The masks are vapor degreased in trichloroethylene
prior to other processing operations.  A low volume of waste-
water is produced by a carbon adsorption solvent recovery system.
The wastewater results from condensing steam used to regenerate
the carbon bed.  Wastewater produced by the solvent recovery
system has a moderate concentration of trichloroethylene.

Photoresist Application - A chromium bearing photoresist solution
is applied to the panel to prepare the surface for selective
phosphor application.  The photoresist solution is applied, the
mask is placed over the panel, the panel is exposed to light,
developed, graphite coated, re-developed, and cleaned in several
hydrofluoric-sulfuric acid solutions.  The photoresist application
process results in a graphite coated panel surface with a multi-
tude of uncoated dots.  These dots are then coated with phosphors
during phosphor application.  Wastewater from spent ac.id, photo-
resist, developer solutions and rinses contain high concentrations
of hexavalent chromium, strong acids, fluorides, graphite, and
proprietary chemicals included in the photoresist solutions.

Phosphor Application - This process is commonly referred to as
screening.  A photoresist solution is coated over the panel sur-
face followed by a red, blue, and green phosphor coating.  The
                                IX-20

-------
 Acid Clean - The glass tube body is fused to a metal base, hydro-
 chloric acid etched to remove metal oxides from the glass surface,
 and rinsed twice.   The tube body is polished with a wet hone using
 glass beads and then rinsed.

 The phosphor coated fiber optic window is inserted into the tube
 body, fused to the base of the glass tube, evacuated, sealed, aged,
 and tested.  Combined process water usage for alkaline cleaning and
 acid etching is estimated to  be 18168-22710 liters/hr at this one
 facility contacted.

 Plant 19102 produces a variety of specialized electron tube pro-
 ducts which include:  magnetrons, klystrons, cross field amplifiers,
 modulators and electron tube  sub-assemblies.  Water usage is limited
 to  electroplating  of tube parts, which is included in the Metal
 Finishing Category.  No process water is used in the assembly of
 electron tube products at this facility.

 Receiving Type Electron Tube  Processes - Plant 23337 produces power
 amplifiers and microwave tubes.  The majority of process water
 usage is for electroplating of tube parts, which,is included in the
 Metal Finishing Category.   In addition,  there are two glass tube body
 rinses that require no chemical cleaning processes and,  therefore,
 produce no pollutants in their effluent  discharge.  These
 wet processes will not receive any further consideration.   These
 rinses are intended to remove dust and particulate matter from the
 surface of the glass tube.

 Wastewater Analysis Data

 Wet processes from television picture tube manufacturing were
 sampled at two facilities.  Samples were analyzed for parameters
 identified on the  list of  129 toxic pollutants,  non-toxic  pol-
 lutant metals,  and other pollutant parameters presented  in Table 9-3.

 Tables  9-4 through 9-6 present analysis  data of  process  wastewaters
 and  final  effluents for those picture tube plants sampled  within the
 electron tube subcategory.  This table presents  pollutant  parameters,
 concentrations,  and mass loadings  of the processes sampled.   Pollu-
 tant parameters  are grouped according to toxic pollutant organics,
 toxic  pollutant  metals,  non-toxic  pollutant metals,  and  other
 pollutant  parameters.   Summation of pollutant concentrations  greater
 than the minimum detectable limit  are presented  as well  as mass
 loadings of  those  pollutant parameters whose concentrations  were
measurable.   Mass  loadings were derived  by multiplying concentration
by  the  flow  rate and the hours  per  day that a particular process is
operated.   Some  entries  were  left  blank  for one  of the following
reasons:   the parameter  was not detected;  the concentration  used for
 the  kg/day  calculation is  less  than the  lower quantifiable limits or
not quantifiable.   The  kg/day is not included in  totals  for  calcium,
magnesium,  and sodium,   The kg/day  is  not  applicable  to  pH.   Totals
do not  include values  preceded  by  "less  than".

Toxic pollutant  organics,  toxic  pollutant  metals  and  non-toxic
pollutant metals were  detected  at measurable  levels  as well  as
at levels  below  the  quantitative limit.  Other pollutant parameters
are all  reported in measurable  quantities.   The  following  conventions
were  followed in presenting the data:

                              IX-21

-------
panel is exposed to light, developed, precoated, lacquer coated,
and aluminized.  After the mask and panel are mated for the final
time, the panel face and edge are cleaned.  The phosphor materials
adhere to the uncoated dots on the glass panel surface and are the
elements of the finished tube that produce a colored visual image.
Wastewater from phosphor coating solutions, developer solutions,
aluminizing, panel face and edge cleaning, and rinses contain high
levels of phosphor materials such as cadmium sulfide, zinc sulfide,
yttrium, and europium.  In addition, there are moderate levels of
proprietary photoresists.

Funnel and Mount Cleaning - Glass funnels are the casing extended
back from the panel and are the largest component of a picture
tube.  The funnel is alkaline cleaned, rinsed, and graphite coated.
Electron shields are solvent degreased and attached to the panel-
mask assembly.  The panel is fused to the funnel with a lead
frit.  Lastly, the mount assembly is cleaned, aged, inserted
into the neck of the glass funnel, and the entire unit becomes
a picture tube.  The tube is aged, receives an external coat-
ing, and is tested prior to shipment.  Wastewater'from the
funnel cleaning rinse contains lov; level of silicates.  Waste-
water from mount cleaning contains oily materials from mount
manufacture.

Tube Salvage - Expended picture  tubes  are  received  and  disas-
sembled  to recover  the panel,  funnel,  and  mask.  The  unit is  de-
fritted  in a strong  acid  solution,  the mount  assembly is  discar-
ded, and the remaining components  are  cleaned and  reprocessed to
become part of a  new picture  tube.   Levels of nitric  and  hydro-
fluoric  acids, lead.,  and  fluoride  pollutants  are  high.   Pollutant
levels of aluminum  and  iron  resulting  from rinsing after  abrasive
oxide cleaning of the masks  are  moderate.

Aperture Mask  Formation - Steel  aperture masks,  which line the.
inner face of  the glass panel,  are produced at facilities other
than those manufacturing  the television picture tubes.   At Plant
36146 sheet  steel is cleaned,  flow coated with photosensitive
material, covered with  a  perforated pattern,  and exposed to light.
A developer  is  then applied  and  air dried.  Holes in the aperture
mask are etched  with ferric  chloride and rinsed.   Pollutants
include  iron,  chromium,  zinc,  trichloroethylene,  total suspended
solids,  oil  and  grease,  and  photochemicals.

Transmitting  Type Electron Tube Processes - The following process
description discusses the wet operations involved in the manufacture
of a light  sensing  image intensifier.   These wet processes existed
at one  contacted plant,  Plant 41122.

Alkaline Clean - A ceramic or glass envelope is brazed to several
metal components.  This unit is then alkaline cleaned, rinsed,
alcohol dipped,  rinsed,  and the metal portion of the unit is
phosphor coated.  This phosphor coated component is the fiber
optic window used to portray the light image in the assembled
product.
                             IX-22

-------
                                    TABLE 9-3
                         POLLOTANT PARAMETERS ANALYZED
 TOXIC POLLOTANT OBGANICS

  1.   Acenaphthene                       47.
  2.   Acrolein                           48.
  3.   Acrylonitrile                      49.
  4.   Benzene                            50.
  5.   Benzidine                          51.
  6.   Carbon Tetrachloride               52.
      (Tetrachloromethane)               53.
  7.   Chlorobenzene                      54.
  8.   1,2,4-Trichlorobenzene             55.
  9.   Hexachlorobenzene                  56.
 10.   1,2-Dichloroethane                 57.
 11.   1,1,1-Trichloroethane              58.
 12.   Hexachloroethane                   59.
 13.   1,1-Dichloroethane                 60.
 14.   1,1,2-Trichloroethane              61.
 15.   1,1,2,2,-Tetrachloroethane         62.
 16.   Chloroethane                       63.
 17.   Bis (Chlorornethyl) Ether             64.
 18.   Bis(2-Chloroethyl)Ether            65.
 19.   2-Chloroethyl Vinyl Ether (Mixed)   66.
 20.   2-Chloronaphthalene                67.
 21.   2,4,6-Trichlorophenol              68.
 22.   Parachlorometa Cresol              69.
 23.   Chloroform (Trichlorpmethane)       70.
 24.   2-Chlorophenol                      71.
 25.   1,2-Dichlorobenzene                72.
 26.   1,3-Dichlorobenzene                73.
 27.   1,4-Dichlorobenzene                74.
 28.   3,3'-Dichlorobenzidine
 29.   lfl-Dichloroethylene               75.
 30.   1,2-Trans-Dichlorethylene
 31.   2,4-Dichlorophenol                  76.
 32.   1,2-Dichloropropane                77.
 33.   1,2-Dichloropropyiene              78.
      (1,3-Dichloropropene)               79.
 34.   2,4-Dimethylphenol                  80.
 35.   2,4-Dinitrotoluene                  81.
 36.   2,6-Dinitrotoluene                  82.
 37.   1,2-Diphenylhydrazine
 38.   Ethylbenzene                        83.
 39.   Fluorantfrene
 40.   4~Chlorophenyl Phenyl Ether         84.
 41.   4-Bromaphenyl Phenyl  Ether          85.
 42.  Bis(2-Chloro.isopropyl) Ether        86.
43.  Bis(2-Chloroethoxy)Methane          87.
44.  Methylene Chloride                  88.
45.  Methyl Chloride  (Chloromethane)     90.
46.  Methyl Bromide (Bromomethane)       91.

                                         92.
 Bromoform (Tribrcanomethane)
 Dichlorobromomethane
 Trichlorofluoromethane
 Dichlorodifluoromethane
 Chlorodibromomethane
 Hexachlorobutadiene
 Hexachlorcx^clopentadiene
 Isophorone
 Naphthalene
 Nitrobenzene
 2-Nitrophenol
 4HSlitrophenol
 2,4HDinitrophenol
 4,6-Dinitro-O-Cresol
 N-Nitrosodimethylamine
 N-Nitrosodiphenylamine
 N-Wi trosod i-N-Propylamine
 Pentachlorophenol
 Phenol
 Bis(2-ethylhexyl) Phthalate
 Butyl Benzyl Phthalate
 Di-N-Butyl Phthalate
 Di-^-Octyl Phthalate
 Diethyl  Phthalate
 Dimethyl Phthalate
 1r2-Benzanthracene (Benzo(A)Anthracene)
 Benzo (A)  Pyrene  (3,4-Benzo-Pyrene)
 3,4-^enzofluoranthene  (Benzo(B)
 (Fluoranthene)
 11,12-Benzofluoranthene  (Benzo(K)
 Fluoranthene)
 Chrysene
 Acenaphthylene
 Anthracene
 1,12-Benzoperylene(Benzo(GHI)-Perylene)
 Fluorene
 Phenanthrene
 1,2,5,6-Dibenzathracene(Dibenzo(A,H)
 Anthracene)
 Idenb(l,2,3-CD)Pyrene(2,3-0-Phenylene
 Pyrene)
 Pyrene
 Tetrachloroethylene
 Toluene
 Trichloroethylene
Vinyl Chloride (Chloroethylene)
 Dieldrin
 ChlordaneCltechnical Mixture and
Metabolites)
 4,4'-DDT
                                    IX-23

-------
                              TABLE 9-3 CONTINUED
 93.  4f4'-DDE (P,P'-DDX)                    113.
 94.  4,4'-DDD (P,P-TDE)                     114.
 95.  Alpha-Endosulfan                       115.
 96.  Beta-Endosulfan                        117.
 97.  Endosulfan Sulfate                     118.
 98.  Endrin                                 119.
 99.  Endrin Aldehyde                        120.
100.  Heptachlor                             121.
101.  Heptachlor Epoxide (BHC~Hexachloro-    122.
        cyclophexane)                        123.
102.  Alpha-BHC                              124.
103.  Beta-BHC                               125.
104.  Gamma-BHC (Lindane)                    126.
105.  Delta-BHC (PCB-Polychlorinated         127.
        Biphenyls )                           128 .
106.  PCB-1242 (Arochlor 1242)               129.
107.  PCB-1254 (Arochlor 1254)
108.  PCB-1221 (Arochlor 1221)
109.  PCB-1232 (Arochlor 1232)
110.  PCB-1248 (Arochlor 1248)
111.  PCB-1260 (Arochlor 1260)
112.  PCB-1016 (Arochlor 1016)
NON-TOXIC POLLUTANT MSIALS

Calcium                                      Germanium
Magnesium                                    Rubidium
Sodium                                       Strontium
Aluminum                                     Zirconium
Manganese                                    Niobium
Vanadium                                     Palladium
Boron                                        Indium
Barium                                       Tellurium
Molybdenum                                   Cesium
Tin                                          Tantalum
Yttrium                                      Tungsten
Cobalt                                       Osmium
Iron                                         Platinum
Titanium                                     Gold
Potassium                                    Bismuth
Gallium                                      Uranium

OTHER POLLUTANT

Oil and Grease
Total Organic Carbon
Biological Oxygen Demand   ,
Total Suspended Solids
Phenols
Fluoride
Xylenes
Alkyl Epoxides
Toxaphene
Antimony
Arsenic
Beryllium
Cadmium
Chromium
Copper
Cyanide
lead
Mercury
Nickel
Selenium
Silver
Thallium
Zinc
2,3,4,8-Tetrachlorodibenzo-P-
Dioxin (TCDD)
                                      IX-24

-------
 Stream Identification
 Sample Number
 Flow Pate Liters/Hr-Gallons/Hr
 Duration Hours/Day

 TOXIC ORGANICS

   1 Acenapthene
   4 Benzene
  11 1,1,1-Trichloroethane
  13 1,1-Dichloroethane
  23 Chloroform
  29 1,1-Dichloroethylene
  30 1,2-Trans-dichloroethylene
  38 Ethylbenzene
  39 Pluoranthene
  44 Methylene chloride
  48 Dichlorcbronoraethane
  51 Chlorodibrcroomethane
  55 Napthalene
  65 Phenol
  66 Bis(2-ethylhexyl)phthalate
  67 Butyl benzyl phthalate
  68 Di-N-butyl phthalate
  70 Diethyl phthalate
  78 Anthracene
  81 Phenanthrene
  84 Pyrene
  86 Toluene
  87 Trichloroethylene
  95 Alpha-Endosulfan
 102 Alpha-BHC
 105 Delta-BHC

 Total Toxic Organics

 TOXIC ^ETALS

 114 Antimony
 115 Arsenic
 117 Beryllium
 118 Cadmium
 119 Chrcciium
 120 Copper
 122 Lead
 123 Mercury
 124 Nickel
 125 Selenium
 126 Silver
 127 Thallium
 128 Zinc
 Total Toxic Metals
                                                             TABLE 9-4A
                                                     PICTURE TUBE PROCESS WASTES
                                                          (PLANT ID# 30172)
 mg/1      kg/day
 Chromium Treatment
       Influent
 03661
 491 - 130
 24
< 0.010
  0.058(B) .0.0007

       (B)
< 0.010
  0.490(B) 0.006
< 0.010

  0.460
  0.010
0.005
0.0001
< 0.010
< 0.010
< 0.010
  0.029    0.0003
  O.OIO(B) 0.0001
  1.057
0.122
0.003
< 0.004*
0.001
< 0.002
86.800
0.028
< 0.040
< 0.001
0.009
0.004
<- 0.001
< 0.001
< 0.001
0.00004

0.00001

1.02
0.0003


0.0001
0.00005



               rag/1      kg/day
                Lead Treatment
                   Influent
               85125
               45 - 12
               24
                          Nbt
                          Analyzed
rag/1 .     kg/day
 Total Raw Waste Into
   Primary Treatment
85127
13028 - 3442
24
                                        Nbt
                                        Analyzed
                                         86.845    1.0205
0.092
0.250
0.004
1.070
4.670
< 0.050
891.000
0.001
18.500
< 0.020
0.060
0.002
1510.000
2425.649
0.0001
0.0003
0.000004
0.001
0.005

0.962
0.000001
0.02

0.00006
0.000002
1.631
2.619467
0*188
0.100
< 0.001
0.215
2.470
0.093
20.700
< 0.001
0.062
< 0.004
0.001
< 0.001
6.770
30.599
0.059
0.031

0.067
0.772
0.029
6.47

0.019

0.0003

2.117
9.5643
Interference Present
                                                     IX-25

-------
                                               TABLE 9-4A (COOT.)
                                           PICTURE TUBE PROCESS WASTES
                                                (PLANT ID# 30172)
NOB-TOXIC METALS
Calcium *
Magnesium *
Sodium *
Aluninun
Manganese
Vanadium
Boron
Barium
Molybdenum
Tin
Yttrium
Cobalt
Iron
Titanium
Potassium
Gallium
Germanium
Rubidium
Strontium
Zirconium
Niobium
Palladium
Indium
Tellurium
Tungsten
Osniun
Platinum
Gold
Bianuth
Uranium
Total Hoasureable Non-Toxic Metals
4.960 0.058
1.220 0.014
11.200 0.132
0.034 0.0004
0.008 0.00009
0.016 0.0002
< 0.002
0.027 0.0003
0.180 0.002
0.111 0.001
0.013 0.0002
< 0.050
0.173 0.002
0.006 0.00007


Not
Analyzed



< 0.003
Not Analyzed
< 0.003
Not Analyzed

0.006 0.00007
< 0.002
Not Analyzed

0.574 0.00633
87.800 0.095
30.900 0.033
640.000 0.691
12.000 0.013
5.860 0.006
0.161 0.0002
346.000 0.374
205.000 0.221
1.600 0.002
3.010 0.003
16.800 0.018
2.650 0.003
1940.000 2.095
0.314 0.0003


Not
Analyzed



0.318 0.0003
Nbt Analyzed
0.029 0.00003
Not Analyzed

0.090 0.0001
< 0.004**
Not Analyzer!

2533.832 2.73593
88.600 27.702
7.970 2.492
173.000 54.
3.250 1.016
0.040 0.013
0.010 0.003
9.170 2.867
1.100 0.344
< 0.035
0.119 0.037
2.290 0.716
< 0.050
7.720 2.414
0.222 0.069


Not
Analyzed



< 0.003
Not Analyzed
0.003 0.0009
Not Analyzed

< 0.005
< 0.002
Not Analyzed

23.924 7.4799
OTHER EOUOTANTS
                o
    Temperature  C
121 Cyanide, Total
    Oil & Grease
    Total Organic Carbon
    Biochemical Oxygen Demand
    Total Suspended Solids
    Phenols
    Fluoride
5.3
21
<0.005
66
1000
2
2
0.01
0.82



0.78
11.78
0.02
0.02
0.0001
0.010
< 2.0
19
<0.005
11
< 1.0
< 1.0
190
0.01
160



0.012


0.205
0.00001
0.173
2.7
21
<0.005
14
47
< 1.0
130
0.01
260



4.4
14.70

40.6
0.003
81.3
  * Metals Not Included In Total
 ** Interference Present
                                                      IX-26

-------
 Stream Identification
 Sample Number
 Flow Rate Liters/Hr
 Duration Hours/Day-

 TOXIC ORGANICS

   1 Acenapthene
   3 Acrylonitrile
   4 Benzene
  11 1,1,1-Trichloroethane
  13 1,1-Dichloroethane
  23 Chloroform
  29 1,1-Dichloroethylene
  30 1,2-Trans-dichloroethylene
  38 Ethylbenzene'
  39 Fluoranthene
  44 Methylene chloride
  48 Didilorobrcmomethane
  51 Chlorodibrcmoroethane
  55 Napthalene
  58 4-Nitrophenol
  65 Phenol
  66 Bis(2-ethylhexyl)phthalate
  67 Butyl benzyl phthalate
  68 Di-N-butyl phthalate
  70 Diethyl phthalate
  71 Dimethyl phthalate
  78 Anthracene
  81 Phenanthrene
  84 Pyrene
  85 Tetrachloroethylene
  86 Toluene
  87 Trichloroethylene
  95 Alpha-Endosulfan
  102 Alpha BHC
  105 Delta BHC

  Total  Toxic Organics

  TOXIC  METALS

  114 Antimony
  115 Arsenic
  117 Beryllium
  118 Cadmium
  119 Chrotiium
  120 Copper
  122 Lead
  123 Mercury
  124 Nickel
  125 Selenium
  126 Silver
  127 Thallium
  128  Zinc
  Total Toxic Metals
                                                            TABLE 9-4A
                                                    PICTURE TUBE PROCESS WASTES
                                                          (PLANT ID# 30172)
                                                               (CONT)
mg/1      kg/day
Chromium Treatment
     Effluent
85124
491 - 130
24
Not
Analyzed
0.005
0.044
< 0.001
< 0.002
76.400
0.027
0.106
< 0.001
< 0.005
0.013
< 0.001
< 0.001
0.038
76.633
0.00006
0.0005


0.900
0.0003
0.001


0.0002


0.0004
0.90246
mg/1      kg/day
 .Lead Treatment
    Effluent
85126
157 - 42
7
Not
analyzed
< 0.015
0.010
< 0.001
< 0.005
0.027
0.048
1.900
< 0.001
0.641
< 0.004
< 0.002
< 0.010*
11.400
14.026

0.00001


0.00003
0.00005
0.002

0.0007



0.013
0.01579
mg/1      kg/day
 Primary Treatment
 Clarifier Effluent
85128
13028 - 3442
24
NOt
Analyzed
0.146
0.008
0.001
0.002
0.292
0.015
0.273
0.001
0.010
0.005
0.001
0.001
0.112
0.862
0.046
0.003


0.091
0.005
0.085

0.003
0.002
0.0003

0.035
0.2703
*Interference Present
                                                     IX-27

-------
 NOJ-TOXIC 1«TALS

     Calcium *
     Magnesiuri * ,
     Sodium  *
     Aluminum
     Manganese
     Vanadium
     Boron
     Barium
     Molybdenum
     Tin
     Yttrium
     Cobalt
     Iron
     Titanium
     Potassium
     Gallium
     Germanium
     Rubidium
     Strontium
     Zirconium
     Niobium
     Palladium
     Indium
     Tellurium
     Tungsten
     Osmium
     Platinum
     Gold
     Bi smith
     Uranium
 Total Non-Toxic Metals

 OTHER POLLUTANTS
     Temperature  C
 121 Cyanide, Total
     Oil & Grease
     Total Organic Carbon
     Biochemical Oxygen Demand
     Total Suspended Solids
     Phenols
     Fluoride
                                                       TABLE 9-4A (COMT.)
                                                  PICTURE TUBE PROCESS WASTES
                                                       (PLANT ID# 30172)
5.400
1.220
62.300
0.054
0.039
0.011
0.239
0.037
0.106
0.102
0.023
< 0.050
5.220
0.003
wot
Analyzed
0.064
0.014
0.734
0.0006
0.0005
0.0001
0.003
0.0004
0.001
0.001
0.0003

0.062
0.00004


< 0.010**
 Not Analyzed
  0.020    0.0002
< 0.005
< 0.002
 Hot Analyzed

  5.854    0.06914
< 2.0
22
<0.005
10
880
< 1.0
2
0.02
0.40



0.118
10.4

0.024
0.0002
0.005
28.800
18.500
13400.000
0.679
0.546
0.024
395.000
12.400
0.171
0.392
< 0.008
< 0.119
0.378
0.043
Not
Analyzed
0.032
0.020
14.7
0.0007
0.0006
0.00003
0.434
0.014
0.0002
0.0004


0.0004
0.00005


< 0.003
 Not Analyzed
  0.013    0.00001
  0.020    0.00002
< 0.050**
 Not Analyzed

409.666    0.45041
7.3
19
<0.005
14
160
< 1.0
17
0.08
76



0.015
0.176

0.019
0.00009
0.084
334.000 104.4
7.950
126.000
, 0.309
0.006
0.004
1.880
0.182
< 0.035
0.119
0.006
< 0.050
0.197
< 0.002
Mot
Analyzed
2.49
39.4
0.097
0.002
0.001
0.588
0.057

0.037
0.002

0.062



< 0.003
 Not Analyzed
  0.004    0.001
< 0.005
< 0.002
 Not Analyzed
  2.707
0.847
8.5
19
<0.005
10
49
5
2
0.03
6.5



3.1
15.3
1.56
0.625
0.009
2.0
 * Metals Not Incluccc In Total
** Interference Present
                                                  IX-28

-------
                                                            TABLE 9-4A
                                                    PICTURE TUBE PROCESS WASTES
                                                         (PLSNT ID# 30172)
                                                              (CONT)
Stream Identification
Sample Number
Plow Rate Liters/Hr
Duration Hours/Day

TOXIC &ETALS

  1 Acenapthene
  3 Acrylonitrile
  4 Benzene
 11 l,lfl-Trichloroethane
 13 1,1-Dichloroethane
 23 Chloroform
 29 1,1-Dichloroethylene
 30 1,2-Trans-dichloroethylene
 38 Ethylbenzene
 39 Fluoranthene
 44 Methylene chloride
 48 Dichlorobrcmomethane
 51 Chlorodibromomethane
 55 Napthalene
 58 4-Nitrophenol
 65 Phenol
 66 Bis(2-ethylhexyl)phthalate
 67 Butyl benzyl phthalate
 68 Di-N-butyl phthalate
 70 Diethyl phthalate
 71 Dimethyl phthalate
 78 Anthracene
 81 Phenanthrene
 84 Pyrene
 85 Tetrachloroethylene
 86 Toluene
 87 Trichloroethylene
 95 Alpha-Endosulfan
102 Alpha-BHC  •
105 Delta-BHC

Total Toxic Organics

TOXIC METALS

114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium  ,
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
126 Silver
127 Thallium
128 Zinc
Total Toxic Metals
 mg/1      kg/day
 Primary Treatment
 Sand Filter Effluent
 03662
 13028 - 3442
 24
< 0.010

< 0.010
< 0.010

< O.OIO(B)
  0.400(B)
< 0.010
< 0.010
<.0.010

< 0.010
< 0.010
< 0.010
< 0.010
< 0.010

<0.010
<0.010
 <0.010
 <0.010
  0..400
  0.117
  0.010
 <0.001
 <0.002
  0.247
  0.017
  0.152
< 0.001
  0.012
< 0.004
  0.001
< 0.001
  0.055
  0.611
0.125
0.125
0.037
0.003
0.077
0.005
0.048

0.004

0.0003

0.017
0.1913
                                           IX-29

-------
NOtMXJXIC METALS

    Calcium *
    Magnesium *
    Sodium «
    Aluminum
    Manganese
    Vanadium
    Boron
    Barium
    Molybdenum
    Tin
    Yttriura
    Cobalt
    Iron
    Titanium
    Potassium
    Gallium
    Germanium
    Rubidium
    Strontium
    Zirconium
    Niobium
    Palladium
    Indium
    Tellurium
    Tungsten
    OsraLum
    Platinum
    Gold
    Bismuth
    Uranium
Total Non-Toxic Metals

OTHER POIIOTANTS
    Temperature  C
121 Cyanide, Total
    Oil & Grease
    Total Organic Carbon
    Biochemical Oxygen Demand
    Total Suspended Solids
    Phenols
    Fluoride
                                                   TABLE 9-4A (GOUT.)
                                              PICTURE TUBE PROCESS WASTES
                                                   (PLANT ID# 30172)
345.000
8.230
123.000
0.239
0.005
0.002
1.530
0.155
< 0.035
0.117
< 0.003
< 0.050
0.048
0.002
108
2.573
38.5
0.075
0.002
0.0006
0.478
0.049

0.037


0.015

 Not
 Analyzed
< 0.005*
 Not Analyzed
< 0.004
 Not Analyzed

< 0.005
< 0.002
 Not Analyzed
  2.096
0.6566
8.5
19
<0.01
5
40
4
1.4
0.02
10



1.6
12.5
1.3
0.44
0.006
3.1
 *Metals Not Included In Totals
**Interferences Present
                                           IX-30

-------
                                                            TABLE 9-4B
                                                    PICTURE TUBE PROCESS WRSTES
                                                         (PLANT H3# 30172)
Stream Identification
Sample Number
Flew Rate Liters/Hr
Duration Hours/Day

TOXIC ORGANICS

  1 Acenapthene
  3 Acrylonitrile
  4 Benzene
 11 1,1,1-Trichloroethane
 13 1,1-Dichloroethane
 23 Chloroform
 29 l,l-Bic±iloroethylene
 30 1,2-Trans-diciiloroethylene
 38 Ethylbenzene
 39 Pluoranthene
 44 Methylene chloride
 48 Dichlorobromoniethane
 51 Chlorodibrcmoinethane
 55 Napthalene
 58 4-Nitrophenol
 65 Phenol
 66 Bis(2-ethylhexyl)phthalate
 67 Butyl benzyl phthalate
 68 Di-N-butyl phthalate
 70 Diethyl phthalate
 71 Dimethyl phthalate
 78 Anthracene
 81 Phenanthrene
 84 Pyrene
 85 Tetrachloroethylene
 86 Toluene
 87 Trichloroethylene
 95 Alpha-Endosulfan
 102 Alpha-BHC
 105 Delta-BHC

 Total Toxic Organics

 TOXIC NETALS

 114 Antimony
 115 Arsenic
 117 Beryllium
 118 Cadmium
 119 Chromium
 120 Copper
 122 Lead
 123 Mercury
 124 Nickel
 125 Selenium
 126 Silver
 127 Thallium
 128 Zinc
 Total Toxic Metals
mg/1      kg/day
Chromium Treatment
     Influent
85129
377 - 100
24
 Not
 Analyzed
< 0.003
  0.006
  0.001
<0.002
100.000
  0.012
  0.295
< 0.001
< 0.005
< 0.004
< 0.001
< 0.001
  0.038
100.352
0.00005
0.000009

0.905
0.0001
0.003
0.0003
0.908459
              mg/1      kg/day
              Total Raw Waste
              Primary Treatment
              85138
              13716 - 3624
              24
              Not
              Analyzed
0.126
0.102
< 0.001
0.135
3.150
0.052
11.200
< 0.001
0.070
< 0.004
0.002
< 0.001
5.120
19.957
0.041
0.034

0.044
1.037
0.017
3.687

0.023

0.0007

1.685
6.5687
mg/1      kg/day
Chromium Treatment
 Effluent
85131
377 - 100
24
Not
Analyzed
0.003
0.004
< 0.001
< 0.002
74.200
0.011
< 0.040
< 0.001
< 0.005
< 0.004
< 0.001
< 0.001
< 0.001
0.00003
0.00004


0.671
0.0001







 74.218    0.67117
                                                   IX-31

-------
                                                 TABLE  9-4B  (CUNT.)
                                             PICTURE TUBE PROCESS WASTES
                                                  (PLANT ID#  30172)
NCN-TOKIC M3TALS

    Calcium  *
    Magnesium  *
    Sodium *
    Aluminum
    Manganese
    Vanadium
    Boron
    Barium
    Molybdenum
    Tin
    Yttrium
    Cobalt
    Iron
    Titanium
    Potassium
    Gallium
    Germanium
    Rubidium
    Strontium
    Zirconium
    Niobium
    Palladium
    Indium
    Tellurium
    Tungsten
    Oanium
    Platinum
    Gold
    Bismuth
    Uranium
Total Non-Toxic Metals

OTHER POUiOTANTS

    pH
    Temperature °C
121 Cyanide, Total
    Oil & Grease
    Total Organic Carbon
    Biochemical Oxygen Demand
    Total Suspended Solids
    Phenols
    Fluoride
2.230
0.474
6.200
0.066
0.005
0.017
0.196
0.044
0.089
0.127
0.102
0.050
0.094
0.007
0.020
0.004
0.056
0.0006
0.00005
0.0002
0.002
0.0004
0.0008
0.001
0.0009

0.0009
0.00006
Not
Analyzed
 0.747
0.00691
                         68.900
                          8.640
                        114.000
                          4.060
                          0.043
                          0.003
                          9.520
                          0.586
                          0.059
                          0.025
                          1.290
                          0.050
                          8.640
                          0.002
                        22.68
                         2.84
                        37.5
                         1.336
                         0.014
                         0.001
                         3.134
                         0.193
                         0.019

                         0.425

                         2.844
               Not
               Analyzed
24.201
                                   7.966
4.7
23
<0.005
10
170
2
0.8
0.02
0.90



0.091
1.5
0.002
0.007
0.0002
0.008
2.1
21
<0.005
11
58
< 1.0
88
< 0.01
270



3.6
19.09

29

88.9
4.830
1.170
111.000
0.053
0.014
0.004
0.079
0.022
0.156
0.082
0.011
< 0.050
1.130
< 0.002
0.044
0.011
1.004
0.0005
0.0001
0.00004
0.0007
0.0002
0.001
0.0007
0.0001

0.010

                         Not
                         Analyzed
                                         1.551
                                                            0.01334
1.9
23
•C0.005
330
490
50
0.6
0.01
0.30



2.99
4.43
0.45
0.005
0.00009
0.003
*Metals Not Included In Totals
                                                 IX-32

-------
                                                           TABLE  9-4B
                                                    PICUTRE TUBE PROCESS WASTES
                                                         (PLANT ID#  30172)
                                                              (CONT)
Stream Identification
Sample Hunter
Plow Rate Liters/a?
Duration Hours/Day

TOXIC ORGANICS

  1 Acenapthene
  3 Acrylonitrile
  4 Benzene
 11 1,1,1-Trichloroethane
 13 1,1-Dichloroethane
 23 Chloroform
 29 1,1-Dichloroethylene
. 30 1,2-Trans-dichloroethylene
 38 Ethylbenzene
 39 Pluoranthene
 44 Methylene chloride
 48 Dichlorobronamethane
 51 (Morodibranomethane
 55 Napthalene
 58 4-Nitrophenol
 65 Phenol
 66 Bis(2-ethylhex/l)phthalate
 67 Butyl benzyl phthalate
 68 Di-N-butyl phthalate
 70 Diethyl phthalate
 71 Dimethyl phthalate
 78 Anthracene
 81 Phenanthrene
 84 Pyrene
 85 Tetrachloroethylene
 86 Toluene
 87 Trichloroethylene
 95 Alpha-endosulfan
102 Alpha-BHC
105 Delta-BHC

Total Toxic Organics

TOXIC ^ETAIlS

114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
126 Silver
127 Thallium
128 Zinc
Total Toxic Metals
mg/1      kg/day
Primary Treatment
Clarifier Effluent
85132
13716 - 3624
24
     mg/1      kg/day
     Primary Treatment
     Sand Filter Effluent
     85130
     13716 - 3624
     24
Sample
Lost
Not
Analyzed
Sample
Lost
      0.136
      0.008
    < 0.001
    < 0.002
      0.250
      0.009
      0.228
    < 0.001
      0.006
    < 0.004
      0.001
    < 0.001
      0.110
      0.748
                                    0.045
                                    0.003
0.082
0.003
0.075

0.002

0.0003

0.036
0.2463
                                              IX-33

-------
                                                            TABLE 9-4B  (CONT.)
                                                       PICTURE TUBE PROCESS WASTES
                                                            (PLANT ID#  30172)
NON-TOXIC ^£TALS

    Calcium *
    Magnesium  *
    Sodium  *
    Aluminum
    Manganese
    Vanadium
    Boron
    Barium
    ttolybdenum
    Tin
    Yttrium
    Cobalt
    Iron
    Titanium
    Potassium
    Gallium
    Germanium
    Rubidium
    Strontium
    Zirconium
    Niobium
    Palladium
    Indium
    Tellurium
    Tungsten
    Osmium
    Platinum
    Gold
    Bismuth
    Uranium
Total Non-Toxic Metals

OTHER POLLUTANTS
                o
    Terjerature  C
121 Cyanide, Total
    Oil & Grease
    Total Organic Caitoon
    Biochemical Oxygen Demand
    Total Suspended Solids
    Phenols
    Fluoride
 Sample
 Lost
  7.1
 19
 <0.005
 52
 Sanyle
 Lost
17.12
             273.000
               9.040
             172.00
               0.237
               0.009
             < 0.001
               2.450
               0.142
             < 0.035
               0.068
             < 0.003
             < 0.050
               0.227
             < 0.002
                          Not
                          Analyzed
< 0.01
 Saraple Lost
                           3.133
 6.9
18
•C0.005
37
40
10
 7
 0.02
 8.2
                                    89.9
                                     2.976
                                    56.6
                                     0.078
                                     0.003

                                     0.807
                                     0.047

                                     0.022
                                     0.075
                         1.032
12.18
13.17
 3.29
 2.3
 0.007
 2.7
*Metals Not Included In Totals
                                              IX-34

-------
                                                            TABLE 9-4C
                                                    PICTURE TUBE PROCESS WASTES
                                                         (PLANT IDf 30172)
Stream Identification
Sample Number
Flow Rate Liters/Hr
Duration Hours/Day

TOXIC ORGANICS

  1 Acenapthene
  3 Acrylonitrile
  4 Benzene
 11 1,1,1-Tridiloroethane
 13 1,1-Dichloroethane
 23 Chloroform .
 29 1,1-Dichloroethylene
 30 1,2-Trans-dichloroethylene
 38 Ethylbenzene
 39 Pluoranthene
 44 Methylene chloride
 48 Didhlorcbrcrnomethane
 51 Chlorodibronomethiane
 55 Napthalene
 58 4-Nitrophenol
 65 Phenol
 66 Bis(2-ethylhexyl)phthalate
 67 Butyl benzyl phthalate
 68 Di-N-butyl phthalate
 70 Diethyl phthalate
 71 Diitiethyl phthalate
 78 Anthracene
 81 Phenanthrene
 84 Pyrene
 85 Tetrachloroethylene
 86 Toluene
 87 Trichloroethylene
 95 Alpha-Endosulfan
 102 Alpha-BHC
 105 Delta-BHC

 Total Toxic Organics

.TOXIC NETALS

 114 Antimony
 115 Arsenic
 117 Beryllium
 118 Cadmium
 119 Chromium
 120 Copper
 122 Lead
 123 Mercury
 124 Nickel
 125 Selenium
 126 Silver
 127 Thallium
 128 Zinc
 Total Toxic Metals
mg/1      kg/day
Chromium Treatment
     Influent
85133
454 - 120
24
Not
Analyzed
  0.004
  0.006
  0.001
< 0.002
 80.400
  0.017
< 0.040
< 0.001
< 0.005
  0.004
  0.001
  0.050
< 0.001
 80.483
0.00004
0.00007
0.00001

0.876
0.0002
0.00004
0.00001
0.0005

0.87687
              mg/1      kg/day
              Total Raw Waste Into
              Primary Treatment
              85137
              11972 - 3163
              24
              Not
              Analyzed
  0.146
  0.160
C  0.001
  0.163
  2.980
  0.052
 10.600
< 0.001
  0.089
< 0.004
  0.001
< 0.001
  6.340
 20.531
0.042
0.046

0.047
0.856
0.015
3.046

0.026

0.0003

1.822
5.9003
                         mg/1-     . kg/day
                         Chromium Treatment
                              Effluent
                         85135
                         454 - 120
                         24
                         Not
                         Analyzed
0.003
0.004
< 0.001
< 0.002
69.400
0.008
< 0.040
< 0.001
< 0.005
0.016
< 0.001
< 0.001
0.023
69.454
0.00003
0.00004


0.756
0.00009



0.0002


0.0003
0.75666
                                                          IX-35

-------
 NON-TOXIC
     Calcium »
     Magnesium *
     Sodium *
     Aluminum
     Manganese
     Vanadium
     Boron
     Barium
     Molybdenum
     Tin
     Yttrium
     Cobalt
     Iron
     Titanium
     Potassium
     Gallium
     Germanium
     Rubidium
     Strontium
     Zirconium
     Niobium
     Palladium
     Indium
     Tellurium
     Tungsten
     Osmium
     Platinum
     Gold
     Bismuth
     Uranium
Total Non-Toxic Metals

OTHER POLLUTANTS
                o
    Temperature  C
121 Cyanide, Total
    Oil & Grease
    Total Organic Carbon
    Biochemical Oxygen Demand
    Total Suspended Solids
    Phenols
    Fluoride
                                                         TABLE 9-4C (CONT.)
                                                    tTCTURE TUBE PROCESS WASTES
                                                         (PLANT ID# 30172)
1.260
0.398
7.010
0.011
0.005
0.008
0.167
0.019
0.128
0.064
0.010
0.073
0.049
0.002
0.0137
0.004
0.0764
0.0001
0.00005
0.00009
0.002
0.0002
0.001
0.0007
0.0001
0.0008
0.0005

91.300
8.340
149.000
4.190
0.050
0.005
7.080
0.626
0.098
< 0.025
1.470
0.050
9.320
< 0.002
26.2
2.396
42.8
1.204
0.014
0.001
2.034
0.180
0.028

0.422

2.678

Not
analyzed
 0.534    0.00554
5.4
24
•C0.005
24
950
20
< 1.0
0.01
1.8



0.262
10.4
0.218

0.0001
0.020
Not
Analyzed
                         22.839
                          1.7
                         22
                         <0.005
                         12
                         43
                        < 1.0
                         50
                        < 0.01
                        490
          6.561
          3.45
         12.4

         14.4

        141
                                                   7.230
                                                   1.590
                                                  66.100
                                                   0.112
                                                   0.040
                                                   0.002
                                                   0.115
                                                   0.059
                                                   0.113
                                                   0.088
                                                   0.033
                                                 C  0.050
                                                   5.260
                                                   0.002
 Not
 Analyzed
                                                   5.822
< 2.0
 25
 <0.005
 36
860
 30
  3
  0.02
  0.60
                                   0.079
                                   0.017
                                   0.720
                                   0.001
                                   0.0004
                                   0.00002
                                   0.001
                                   0.0006
                                   0.001
                                   0.001
                                   0.0004

                                   0.057
                                                            0.06242
0.392
9.37
0.327
0.033
0.0002
0.007
*Metals Not Included In Totals
                                                  IX-36

-------
Stream Identification
Sample Number
Flow Pate Liters/Hr
Duration Hours/Day

TOXIC ORGANICS

  1 Acenapthene
  3 Acrylonitrile
  4 Benzene
 11 1,1,1-Trichloroethane
 13 1,1-Dichloroethane
 23 Chloroform
 29 1,1-Dichloroethylene
 30 1,2-Trans-dichloroethylene
 38 Ethylbenzene
 39 Fluoranthene
 44 Methylene chloride
 48 Dichlorobranonethane
 51 Chlorodibrctnottiethane
 55 Napthalene
 58 4-Nitrophenol
 65 Phenol
 66 Bis(2-ethylhex^l)phthalate
 67 Butyl benzyl phthalate
 68 Di-N-butyl phthalate
 70 Diethyl phthalate
 71 Dimethyl phthalate
 78 anthracene
 81 Phenanthrene
 84 Pyrene
 85 Tetrachloroethylene
 86 Toluene
 87 Trichloroethylene
 95 Alpha-Endosulfan
102 ftlpha-BHC
105 Delta-BHC

Total Toxic Organics

TOXIC METALS

114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
126 Silver
127 Thallium
128 Zinc
Total Toxic Metals
                                                            TABLE 9-4C
                                                    PICTURE TUBE PROCESS WASTES
                                                         (PLANT ID# 30172)
                                                              (COOT)
mg/1      kg/day
Lead Treatment
   Effluent
85139
97 - 26
8
Not
Analyzed
0.123
0.008
< 0.001
< 0.004
0.017
0.035
0.479
< 0.001
1.180
0.008
< 0.001
0.002
26.000
27.852
0.0001
0.000006


0.00001
0.00003
0.0004

0.0009
0.000006

0.000002
0.020
0.021454
mg/1      kg/day
Primary Treatment
Clarifier Effluent
85136
11972 - 3163
24
Not
Analyzed
                          0.119
                          0.010
                         < 0.001
                         < 0.002
                          0.195
                          0.014
                          0.233
                         < 0.001
                          0.016
                         < 0.004
                         < 0.001
                         < 0.001
                          0.150
                          0.737
          0.034
          0.003
          0.056
          0.004
          0.067

          0.005
          0.043
          0.212
mg/1      kg/day
Primary Treatment
Sand Filter Effluent
85134
11972 - 3163
24
Not
Analyzed
0.106
0.010
< 0.001
< 0.002
0.128
0.016
0.109
< 0.001
0.026
< 0.004
< 0.001
< 0.001
0.059
0.454
0.030
0.003


0.037
0.005
0.031

0.007



0.017
0.130
                                                 IX-37

-------
 NON-TOXIC t-ETALS

     Calcium *
     Magnesium  *
     Sodium *
     Aluminum
     Manganese
     Vanadium
     Boron
     Barium
     Molybdenum
     Tin
     Yttrium
     Cobalt
     Iron
     Titanium
     Potassium
     Gallium
     Germanium
     Rubidium
     Strontium
     Zirconium
     Niobium
     Palladium
     Indium
     Tellurium
     Tungsten
     Osmium
     Platinum
     Gold
     Bismuth
     Uranium
Total Non-Toxic Metals

OTHER POLLUTANTS
                                                   TABLE 9-4C (CONT.)
                                              PICTURE TUBE PROCESS WASTES
                                                    (PLANT ID# 30172)
30.400
16.100
10500.
0.577
0.634
0.010
250.
8.140
0.256
0.105
0.012
0.496
0.080
0.021
0.024
0.012
8.148
0.0004
0.0005
0.000008
0.194
0.006
0.0002
0.00008
0.000009
0.0004
0.00006
0.00002
309.
6.150
139.
0.485
0.008
< 0.001
2.060
0.150
0.043
< 0.025
0.005
< 0.050
0.262
< 0.002
88.8
1.767
39.9
0.139
0.002

0.592
0.043
0.012

0.001

0.075

 NOt
 analyzed
260.331
           0.201677
Not
Analyzed
                           3.013
                                    0.864
301.
6.160
140.
0.427
0.007
< 0.001
2.090
0.135
0.037
< 0.025
< 0.003
< 0.050
0.071
< 0.002
86.5
1.770
40.2
0.123
0.002

0.601
0.039
0.011



0.020

Not
Analyzed
                                                    2.767
                                                             0.796
                o
    Teraperataire  C
121 Cyanide, Total
    Oil & Grease
    Total Organic Carbon
    Biochemical Oxygen Demand
    Total Suspended Solids
    Phenols
    Fluoride
6.4
19
<0.005
8
19
< 1.0
5
0.01
81



0.006
0.015

0.004
0.000008
0.063
8.1
20
<0.005
830
22
< 1.0
3
0.02
7.7



238.5
6.3

0.86
0.006
2.2
                                                    7.8
                                                   20
                                                   <0.005
                                                   20
                                                   39
                                                    2
                                                    1
                                                    0.03
                                                   15
                                   5.75
                                  11.2
                                   0.575
                                   0.287
                                   0.009
                                   4.31
*Metals Not Included In Totals
                                                IX-38

-------
                                                             TABLE 9-5A
                                                     PICTURE TUBE PROCESS WASTES
                                                           (PLANT ID! 11114)
                                                         Treatment System I
                                                                
-------
                NON-TOXIC METALS

                    Calcium *
                    Magnesium *
                    Sodium *
                    Aluminum
                    Manganese
                    Vanadium
                    Boron
                    Barium
                    tfolybdenum
                    Tin
                    Xttrium
                    Cobalt
                    Iron
                    Titanium
                    Potassium
                    Gallium
                    Germanium
                    Rubidium
                    Strontium
                    Zirconium
                    Niobium
                    Palladium
                    Indium
                    Tellurian
                    Tungsten
                    Osnium
                    Platinum
                    Gold
                    Bismuth
                    Uranium
               Total Non-Toxic Metals
                                                   TABLE 9-5A  (COOT.)
                                               PICTURE TUBE PROCESS WASTES
                                                    (PLANT IDf  11114)
                                                   TREATMENT SYSTEM I
   8.260
   8.300
1170.
   7.070
   0.023
 < 0.002
  21.20
   0.289
 < 0.036
 < 0.026
   0.358
 < 0.051
   1.600
   0.037
                                                  2.210
                                                  2.22
                                                313.
                                                  1.891
                                                  0.006

                                                  5.672
                                                  0.077
                                                  0.096

                                                  0.428
                                                  0.010
                                        Not
                                        Analyzed
                4.420
                6.800
             1180.
                6.790
                0.024
              < 0.001
               18.00
                0.163
              < 0.035
              <, 0.025
                0.053
              < 0.050
                1.120
                0.032
          1.182
          1.819
        315.7
          1.817
          0.006

          4.8
          0.044
          0.014

          0.300
          0.009
               Not
               Analyzed
19.60
4.850
35.70
9.150
0.012
0.005
11.50
0.397
< 0.035
< 0.025
0.590
< 0.050
1.280
0.127
5.235
1.295
9.534
2.444
0.003
0.001
3.071
0.106


0.158

0.342
0.034
                         Not
                         Analyzed
                                        30.577
8.180
26.182
                                    6.970
23.061
6.159
i/'ta

OTHER POIIOTANTS

    pH               '                    6.2                      6.0                      2.7
    Temperature °C                      26                       27                       24
121 Cyanide, Total                       0.011    0.003           0.185    0.049           0.009    0.002
    Oil & Grease                        20        5.35           20        5.35            1        0.3
    Total Organic Carbon                 7        l'.9             4        1.07          139       37.1
    Biochemical Oxygen Demand           12        3.2            22        5.6             0        0
    Total Suspended Solids              39       10.43           22        5.89          185       49.4
    Phenols                              00               00               0.027    0.007
    Fluoride                           910      243.5          1070      286.3          1925      514.1


 * Metals Not Included In Totals
                                                                  IX-42

-------
                    . TABLE 9-5A
             PICTORB TUBE PROCESS WASTES
                  (PUNT IDf 11114)
                 Treatment System I
                       (COOT)
 Stream Identification
 Sample Number
 Flow Rate: liters/Hr-Gallons/Hr
 Duration Hours/Day

 TOXIC ORGANICS

   1  Acenapthene
   3  Acrylonitrile
   4  Benzene
  11  1,1,1-Trichloroethane
  13  1,1-Dichloroethane
  23  Chloroform
  29  1,1-Dichloroethylene
  30  1,2-Trans-dichloroethylene
  38  Ethylbenzene
  39  Fluoranthene
  44  Methylene chloride
  48  Dichlorobrcraomethane
  51  Chlorodibromomethane
  55  Napthalene
  58  4-Nitrophenol
  65  Phenol
  66  Bis(2-ethylhexyl)phthalate
  67  Butyl benzyl phthalate
  68  Di-N-butyl phthalate
  70  Diethyl phthalate
  71  Dimethyl phthalate
  78  Anthracene
  81  Phenanthrene
  84  Pyrene
  85  Tetraehloroethylene
  86  Toluene
  87  Trichloroetnylene
  95  Alpha-Endosulfan
 102  Alpha-BHC
 105  Delta-BHC

 Total Toxic Organics

 TOXIC MET.M.S

 114  Antimony
 115  Arsenic
 117  Beryllium
 118 Cadmium
 119  Chromium
 120  Copper
 122  Lead
 123 Mercury
 124  Nickel
 125  Selenium
 126 Silver
 127 Thallium
 128  Zinc
Total Toxic Metals
 rng/1      kg/day
 Final Effluent
 85270
 22275 - 5885 .
 24
 NOt
 Analyzed
  0.061
  0.064
( 0.005
  0.370
  0.305
  0.030
 13.800
< 0.001
  0.111
< 0.002
  0.002
< 0.001
 32.800
 47.543
 0.033
 0.034

 0.198
 0.163
 0.016
 7.377

 0.059

•0.001

17.535
25.416
       IX-43

-------
NON-TOXIC ^ETALS

    Calcium*
    Magnesium *
    Sodium*
    Aluminum
    Manganese
    Vanadium
    Boron
    Barium
    Molybdenum
    Tin
    Yttrium
    Cobalt
    Iron
    Titanium
    Potassium
    Gallium
    Germanium
    Rubidium
    Strontium
    Zirconium
    Niobium
    Palladium
   , Indium
    Tellurium
    Tungsten
    Osmium
     Platinum
    Gold
     Bismuth
     Uranium
 Total Non-Toxic Metals

 OTHER POUOTANTS
     Tsjperature  C
 121 Cyanide, Total
     on & Grease
     Total Organic Carbon
     Biochemical Oxygen Demand
     Total Suspended Solids
     Phenols
     Fluoride
                                                    TABLE 9-5A (COOT.)
                                               PICTURE TUBE PB3CESS WASTES
                                                    (PLANT ID* 11114)
                                                    TREATMENT SYSTEM  I
8.310
7.730
1200.
7.610
0.048
< 0.001
19.40
0.503
< 0.035
< 0.025
0.049
< 0.050
2.040
0.122
4.443
4.132
641.5
4.068
0.026

10.4
0.269


0.026

1.091
0.065
 Not
 Analyzed
 •29.772     15.919
   6.1
  24
   0.525
  51
  89
   0
  80
   0.034
1140
  0.281
 27.26
 47.58
  0
 42.77
  0.018
609.4
  *Metals Not Included In Totals
                                                IX-44

-------
  Stream Identification
  Sample Niinber
  Plow Rat« Liters/Hr-Gallons/Hr
  Duration Hours/Day

  TOXIC ORC3ANICS

    1 Acen.jpthene
    3 Acrylonitrile
    4 Benzcine
   11 1,1,1-Trichloroethane
   13 1,1-Oichloroethane
   23 Chloroform
   29 1,1-Dichloroethylene.
   30 1,2-lScans-dichloroethylene
   38 Ethy].benzene
   39 Fluoranthene
   44 Msthylene chloride
   48 Di<^iorobramomethane
   51 Gilorodibromomethane
   55 Naptlialene
   58 4-Nilaxphenol
   65 Phenol
   66 Bis(;>^thylhexyl)phthalate
   67 Butyl benzyl phthalate
   68 Di-N--butyl phthalate
   70 Diethyl phthalate
   71 DiroeWiyl phthalate
   78 Anthracene
   81 Phencinthrene
   84 Pyrerie
   85 Tetrachloroethylene
   86 Tolucoie
   •87 Trichloroethylene
   95 AlphEi-Endosulfan
  102 Alphct-BHC
  105 Deltci-BHC

  Total Tosdc Organics

  TOXIC MEl'KLS

  114 flntinony
  115 Arsenic
  117 Beryllium
  118 Cadmium
  119 Chrcniiian
  120 CcKJeir
  122 Lead
  123 Mercury
  124 Nickel
  125 Selenium
  126 Silveir
  127 Thallium
  128 Zinc
  Total Tcoiic Metals
                                                              TABLE 9-5B
                                                      PICTURE TUBE PROCESS WASTES
                                                           (PLANT ID# 11114)
                                                          Treatment System II
tng/1      kg/day
    HP Etch
  Post Settle
03686
20439 - 5400
16
Not
Analyzed
mg/1      kg/day
  Other Process
    Raw Waste
03680
17033 - 4500
24
                        < 0.010



                        < 0.010

                        < 0.010

                          0.020    0.008
Not
Analyzed
                          0.010

                        < 0.010
          0.004
                        < 0.010
                          0.030
                          0.060
          0.012
          0.024
0.003
0.005
< 0.005
< 0.005
5.580
0.127
< 0.050
< 0.001
0.144
< 0.010 *
0.001
< 0.001
0.194
6.054
0.001
0.002


2.737
0.062


0.071

0.0005

0.095
2.9685
0.440
0.266
< 0.005
0.076
0.025
0.013
2.570
< 0.001
0.014
< 0.002
< 0.001
< 0.001
2.130
5.534
0.180
0.109

0.031
0.010
0.005
1.051

0.006



0.871
2.263
                                                                                            mg/1
          kg/day
Post Filtration
03684
17033 - 4500
24
Not
Analyzed
0.440
0.191
< 0.005
0.018
0.015
0.016
0.883
< 0.001
< 0.013
0.004
0.002
< 0.001
0.605
2.174
0.180
0.078

0.007
0.006
0.007
0.361


0.002
0.0008

0.247
0.8888
"Interference Present
                                                        IX-45

-------
NON-TOXIC METALS

    Calcium *
    Magnesium *
    Sodium *
    Aluminum
    Manganese
    Vanadium
    Boron
    Barium
    ftolybdenura
    Tin
    Yttrium
    Cobalt
    Iron
    Titanium
    Potassium
    Gallium
    Germanium
    Rubidium
    Strontium
    Zirconium
    Niobium
    Palladium
    Indium
    Tellurium
    Tungsten
    Osniura
    Platinum
    Gold
    Bismuth
    Uranium
Total Non-Toxic Metals

OTHER POLLUTANTS
    Temperature  C
121 Cyanide, Total
    Oil & Grease
    Total Organic Carbon
    Biochemical Oxygen Demand
    Total Suspended Solids
    Phenols
    Fluoride
                                                     TABLE 9-5B (CONT.)
                                                PICTURE TUBE PROCESS WASTES
                                                     (PLANT ID# 11114)
                                                    TREATMENT SYSTEM II
19.7Q
7.080
786.
0.121
0.296
< 0.001
0.770
0.034
< 0.035
< 0.025
0.042
< 0.050
80.
< 0.002
9.66
3.47
385.6
0.060
0.145

0.378
0.017


0.021

39.24

Not
Analyzed
81.263   39.86
26.20
8.270
637.
9.830
0.007
0.002
17.700
1.900
0.074
< 0.025
0.681
< 0.050
1.220
0.453
10.71
3.381
260.4
4.018
0.003
0.0008
7.236
0.777
0'.030

0.278

0.499
0.185
6.090
3.340
1810.
9.410
0.003
0.003
17.800
0.616
< 0.036
< 0.025
0.152
< 0.051
0.636
0.313
2.490
1.365
739.9
3.847
0.001
0.001
7.276
0.252


0.062

0.260
0.128
Not
Analyzed
31.867   13.0268
Not
Analyzed
28.933   11.827
7.7
27
0.002
18
5
16
178
0
15


0.001
8.83
2.45
7.85
87.32
0
7.36
2.3
36
0.009
14
8
0
137
0
1800


0.004
5.72
3.27
0
56
0
735.8
6.6
36
0
18
10
11
16
0
4000


0
7.4
4.1
4.5
6.5
0
1635.2
 "Metals Not Included In Totals
                                                     IX-46

-------
 Stream Identification
 Sample Number
 Plow Rate Liters/Hr-Gallons/Hr
 Duration Hours/Day

 TOXIC ORGiiNICS

   1 Acenapthene
   3 flcrylonitrile
   4 Benzene
  11 1,1,1-Trichloroethane
  13 1,1-Dichloroethane
  23 Chlorofoim
  29 1,1-Dichloroethylehe
  30 l,2-ri:ans-dichloroethylene
  38 Ethyllsenzene
  39 FluoKjnthene
  44 tfethylene chloride
  48 Dichlorcbrcrnonethane
  51 ChlorcxiLbranomethane
  55 Naptheilene
  58 4-Nitaxphenol
  65 Phenol;
  66 Bis(2"etnylhexyl)phthalate
  67 Butyl benzyl phthalate
  68 Di-N-*»utyl phthalate
  70 Diethyl phthalate
  71 Dimethyl phthalate
  78 Anthracene
  81 Phenanthrene
  84 Pyrena
  85 Tetra<4iloroethylene
  86 Toluene
  87 Trichloroethylene
  95 Alpha-Endosulfan
 102 Alpha-BHC
 105 Delta-BHC

 Total Tosd-c Organics

 TOXIC
 114 Antimony
 115 Arsend.c
 117 Beryllium
 118 Cadmium
 119 Chromum
 120 Coppeir
 122 Lead
 123 Mercuiy
 124 Nickel
 125 Selenium
 126 Silver
 127 Thalli.um
 128 Zinc
 Total Toxic Metals
                                                             TABLE 9-5B
                                                     PICTURE TUBE PROCESS WASTES
                                                           (PLANT ID#  11114)
                                                         Treatment System II
                                                                (CONT)
mg/1      kg/day
 Final Effluent
 03685
 30659 - 8100
 24
mg/1      kg/day
    HP Dump
85268
17033 - 4500
Batch
Not
Analyzed
Nat
Analyzed
0.079
0.062
< 0.005
0.006
•3.750
0.100
0.315
< 0.001
0.097
< 0.010 *
< 0,001
< 0.001
0.318
4.727
0.058
0.046

0.004
2.759
0.074
0.232

0.071



0.234
3.478
mg/1      kg/day
 Final Effluent
03681
20439 - 5000
Batch
                                                 < 0.010
                                                <  0.010
                                                 < 0.010
                                                 < 0.010
                                                 < 0.010
27.000
9.000
< 0.010
0.975
1.500
0.074
6.820
0.002
0.420
< 0.300 *
0.001
< 0.025 *
10.300
56.092
0.092
0.031

0.003
0.005
0.0003
0.023
0.000007
0.001

0.000003

0.035
0.19031
3.200
1.570
< 0.005
0.031
0.020
0.020
3.190
< 0.001
< 0.013
< 0.025 *
0.004
< 0.010 *
1.080
9.115
0.013
0.006

0.0001
0.00008
0.00008
0.013



0.00002

0.004
0.03628
"Interference Present
                                                       IX-47

-------
NON-TOXIC M3TALS

    Calcium *
    Magnesiun *
    Sodium *
    Aluminum
    Manganese
    Vanadium
    Boron
    Barium
    Molybdenum
    Tin
    yttrium
    Cobalt
    Iron
    Titanium
    Potassium
    Gallium
    Germanium
    Rubidium
    Strontium
    Zirconium
    Niobium
    Palladium
    Indium
    Tellurium
    Tungsten
    Osmium
    Platinum
    Gold
    Bismuth
    Uranium
Total Non-Toxic Metals
     Temperature C
 121 Cyanide, Total
     Oil & Grease
     Total Organic  Carbon
     Biochemical Oxygen Demand
     Total Suspended Solids
     Phenols
     Fluoride
                                                  TABLE 9-5B  (CONT.)
                                              PICTURE TUBE PROCESS WASTES
                                                   (PLANT IDS  11114)
                                                 TREATMENT SYSTEM II
15.10
5.700
1050.
5.060
0.196
0.002
11.00
0.229
0.037
< 0.025
0.081
< 0.050
56.70
0.112
11.11
4.194
772.6
3.723
0.144
0.001
8.09
0.169
0.027

0.060

41.72
0.082
6.220
2.920
5250.
311.
0.540
0.326
862.
5.110
1.840
0.311
0.047
< 0.100
22.20
15.20
0.021
0.010
17.88
1.059
0.002
0.001
2.936
0.017
0.006
0.001
0.0002

0.076
0.052
3.310
1.190
10800.
62.600
< 0.001
0.045
193.
1.630
0.087
0.089
0.025
0.548
1.050
0.412
0.014
0.005
44.148
0.256

0.0002
0.789
0.007
0.0004
0.0004
0.0001
0.002
0.004
0.002
 Not
 Analyzed
 73.417   54.016
  7.5
 36
  0.520
 10
  8
  0
135
  0
700
  0.383
  7.36
  5.89
  0
 99.34
  0
515.1
                Not
                Analyzed
                        1218.574
                          4.1522
Not
Analyzed
                                                 259.486
                                                            1.0611
0.011
17
24
0
3350
0.008
8400
0.00004
0.058
0.082
0
11.412
0.00003
28.615
0.007
17
472
0
38
0.008
4500
0.00003
0.069
1.929
0
0.155
0.00003
18.39
  *Metals Not Included In Totals
                                                    IX-48

-------
                                                             TABLE 9-5C
                                                     PICTURE TUBE PROCESS WASTES
                                                          (PUNT IDf 11114)
                                                        Treatment System III
                                                               (CONT)
 Stream Identification
 Sample Numtxjr
 Flew Rate L±ters/Hr-Gallons/Hr
 Duration Hours/Day

 TOXIC ORGBNICS

   1 Acenaptliene
   3 AcrylonJLtrile
   4 Benzene
  11 1,1,1-Trichloroethane
  13 1,1-Dichloroethane
 , 23 Chloroform
  29 1,1-Dichloroethylene
  30 l,2y£raiis~dichloroetnylene
  38 Ethylbenzene
  39 Fluorantliene
 : 44 Methylene chloride
  48 Dichlorobranctnethane
  51 Chlorodjiaranoniathane
  55 Naptnalesne
  58 4-Nitropnenol
  65 Phenol
  66 Bis(2-et:hylhexyl)phthalate
  67 Butyl benzyl phthalate
  68 Di-N-butyl phthalate
  70 Diethyl phthalate
  71 Diraethyl  phthalate
  78 Anthracene
 , 81 Phenant±irene
  84 Pyrene
  85 Tetrachloroethylene
  86 Toluene
  87 Trichloxoethylene
  95 Alpha-Endosulfan
 102 Alpha-BBC
 105 Delta-BBC

 Total Toxic Organics

TOXIC MJTALS

 114 Antimony
 115 Arsenic
 117 Beryllium
 118 Cadmium
 119 Chromium
 120 Copper
 122 Lead
 123 Mercury
 124 Nickel
 125 Selenium
126 Silver
127 Thallium
128  Zinc
Total Toxic Metals
 mg/1      kg/day
 Total Phosphor
     Effluent
 03682
 5110 - 1350
 24
< 0.010
< 0.010

< 0.010
< 0.010
 < 0.010

  0.020
 Not
 Analyzed
< 0.010

< 0.010
0.002
  0.030    0.004
< 0.010
  0.050    0.006
 Not
 Analyzed
               mg/1      kg/day
               Green Phosphor
                   Effluent
               85276
               1703 - 450
               24
               Not
               Analyzed
                0.004
              <  0.002
              <  0.005
              11.600
                2.380
                0.013
                0.050
                0.001
                0.013
                0.002
                0.001
              (  0.001
              19.100
              33.085
                                    0.0002
                                    0.474
                                    0.097
                                    0.00004

                                    0.781
                                    1.35224
  mg/1      kg/day
  Blue Phosphor
     Effluent
  85275
  1703 - 450
  24
 Not
 Analyzed
< 0.001
< 0.002
< 0.005
  0.020
  /3.750
  0.013
  0.050
  0.001
  0.013
  0.002
  0.008
 < 0.001
  31.500
  35.278
0.0008
0.153
0.0003

1.29
1.4441
                                                    IX-49

-------
NON-TOXIC ^ETALS

    Calcivn  *
    Magnesium *
    Sodium *
    Aluminum
    Manganese
    Vanadium
    Boron
    Barium
    l-blybdenura
    Tin
    Yttriun
    Cobalt
    Iron
    Titanium
    Potassium
    Gallium
    Germanium
    Rubidium
    Strontium
    Zirconium
    Niobium
    Palladium
    indium
    Tellurium
    Tungsten
    Osnium
    Platinum
    Gold
    Bismuth
    Oraniun
Total Non-Toxic Metals
             TABLE 9-5C (GOMT.)
        PICTURE TUBE PROCESS WASTES
             (PLANT ID# 11114)
            TREATMENT SYSTEM II

                           0.257
                         < 0.025
                          18.300
                           0.021
                         < 0.001
                         < 0.001
                           0.094
                           0.538
                         < 0.035
                         < 0.025
                           0.037
                           0.212
 Not                      0.004
 Analyzed               < 0.002
    Teraperature  C
Rl Cyanide, Total
    Oil 6 Grease
    Total Organic Carbon
    Biochemical Oxygon Demand
 '   Total Suspended Solids
    Phenols
    Fluoride
   0
 505
 J30
  48
1030
   0
  45
  0
 61.9
 15.9
  5.9
132.5
  0
  5.5
                          0.011

                          0.748
                          0.0009
                          0.004
                          0.022
                          0.002
                          0.009
                          0.0002
                          Not
                          Analyzed
                            0.906     0.0381
 4.8
28        1.14

Not Analyzed

35        1.43
Not Analyzed
                         1.110
                         0.187
                        20.200
                         0.158
                         0.001
                         0.001
                         0.137
                         0.552
                        : 0.035
                        : 0.025
                         0.142
                         0.193
                         0.009
                        : 0.002
         0.045
         0.008
         0.826
         0.006
          0.006
          0.023
          0.006
          0.008
          0.0004
                                         Not
                                         Analyzed
                                                    1.191    0.0494
 5.0
28        1.14

Not Analyzed

36        1.47
Not Analyzed
 *Metals Not Included In Totals
                                                    IX-50

-------
  Stream identification
  Sample number
  Plow Rate Liters/Hr - Gallons/Hr
  Duration Hours/Day

  TOXIC OIX3ANICS
                                                              TABLE 9-SC
                                                      PICTURE TUBE PROCESS HASTES
                                                            (PLANT ID*  11114)
                                                         Treatment System III
  mg/1      kg/day
   Green Phosphor
     Raw Waste
  85273
  1703 - 450
  24
                mg/1      kg/day
                 Blue Phospher
                   Raw Waste
                85272    *
                1703 - 450
                24
                                                                                          mg/1      kg/day
                                                                                           Red Phosphor
                                                                                            Raw Waste
                                                                                          85271
                                                                                          1703 -  450
                                                                                          24
  1 Acenapthene
  3 Acrylonitrile.
  4 Benxene
 11 1,1,.1-Trichloroethane
 13 l,l--Dichloroethane
 23 Chloroform
 29 1,1-Dichloroethylene
 30 l,2"Trans-dichloroethylene
 38 Ethylbenzene
 39 Fluoranthene
 44 tfethylene chloride
 48 Dichlorobrgmomethane  .
 51 Chlorodibranotnethane
 55 Napliialene
 58 4-Nitrophenol
 65 Phenol
 66 Bis(2-ethylhexyl)phtnalate
 67 Butyl benzyl phthalate
 68 Di-N-butyl phthalate
 70 Dielihyl phthalate
 71 Dimeithyl phthalate
 78 Anttiracene
 81 Pheiianthrene
 84 Pyrtsne
 85 Tetrachloroethylene
 86 Toluene
 87 Tricjhloroethylene
 95 Alpha-Endosulfan
102 Alpha-BHC
105 Dslta-BHC

Total TcscLc Organics

TOXIC MITALS

114 AntJjnony
115 Arscsnic
117 Berjrllium
118 Cadmium
119 Chrttnium
120 Copjier
122 Leafl
123 ffercwry
124 Nid-el
125 Selenium
126 Silver
127 Thallium
128 Zinc:
Total Toxic Metals
                                          Not
                                          Analyzed
                           Not
                           Analyzed
 < 0.001
   0.006
 < 0.005
 184.
   4.970
   0.240
                                          < 0.
                                          <0.
    .050
    .001
 < 0.013
 < 0.010*
   0.005
 < 0.001
1540
1729.221
 0.0002

 7.52
 0.203
 0.010
 0.0002

62.94
70.6735
   0.001
   0.002
 < 0.005
   0.756
   4.480
 < 0.013
 < 0.050
 < 0.001
 < 0.013
 < 0.010 *
   0.360
 < 0.001
1910.
1915.599
                                                                              0.00004
                                                                              0.00008

                                                                              0.031
                                                                              0.183
                                                                              0.015

                                                                             78.07
                                                                             78.29912
                                                                                                                    ?•»*•' *i
                                                                                                                    sfes'
                                         Not
                                         Analyzed
< 0.001
0.008
< 0.005
0.120
3.710
< 0.013
< 0.050
< 0.001
< 0.013 ,
< 0.010*
0.004
< 0.001
2.860
6.702

0.0003

0.005
0.152

-,



0.0002

0.117
0.2745
* Interference Present
                                                         IX-51

-------
NON-TOXIC MSTALS

    Calcium *
    Magnesiur *
    Sodium *
    Aluminum
    Manganese
    Vanadium
    Boron
    Barium
    Molybdenum
    Tin
    Yttrium
    Cobalt
    Iron
    Titanium
    Potassium
    Gallium
    Germanium
    Rubidium
    Strontium
    Zirconium
    Niobium
    Palladium
    Indium
    Tellurium
    Tungsten
    Osraiun
    Platinum
    Gold
    Bisnuth
    Uranium
Total Non-Toxic Metals

OTHER POLLOTANTS
    Temperature  C
121 Cyanide, Total
    Oil & Grease
    Total Organic Carbon
    Biochemical Oxygen Demand
    Total Suspended Solids
    Phenols
    Fluoride
                                                       TABLE 9-5C  (OOMf.)
                                                   PICTURE TUBE PROCESS WASTES
                                                        (PIAWT ID#  11114)
                                                      TREATMENT SYSTEM II
0.481
< 0.049
787.
0.426
< 0.001
< 0.003
2.390
0.825
< 0.069
0.123
0.411
0.293
0.093
< 0.004
0.020

32.2
0.017


0.098
0.034

0.005
0.017
0.012
0.004

5.120
0.794
1280.
1.010
< 0.001
< 0.001
< 0.002
0.151
< 0.035
0.111
8.160
< 0.050
0.024
< 0.002
0.209
0.032
52.3
0.041



0.006

0.005
0.334

0.001

  Not
  Analyzed
   4.561    0.187
   4.9
  31

  NOt
  Analyzed
2450
  Not
  Analyzed
100.1
                Not
                Analyzed
0.271
0.496
149.
0.188
< 0.001
0.172
0.721
0.012
0.133
0.591
1300.
4.730
< 0.001
0.038
0.011
0.020
6.09
0.008

0.007
0.030
0.0005
0.005
0.024
53.13
0.193

0.002
                           Not
                           Analyzed
                 9.456
   4.9   sr
  28     |p

   Not    '
   Analyzed

2560
  Not
  Analyzed
                                     0.387
                                                 1306.586   53.3995
                                          5.0
                                         35

                                         Not
                                         Analyzed
                                   104.6
1840
  Not
  Analyzed
                                                            75.20
 *Matals Not Included In Totals
                                                   IX-52

-------
                                                          TABLE 9-5C (OONT)
                                                     PICTURE TUBE PROCESS WASTES
                                                          (PLANT IDS H114)
                                                        Treatment System III
 Stream Mortification
 Sample Nuritoer
 Flow Rate Liters/Hr-Gallons/Hr
 Duration Hours/Day

 TOXIC ORQiNICS

   1 Acenapthene
   4 Benzene
  11 1,1,1-Trichloroethane
  13 1,1-Dichloroethane
  23 Chloroform
  29 1,1-Dichloroethylene
  30 1,2-tirans-dichloroethylene
  38 Ethyltenzene
  39 Fluorcinthene
  44 Methylene chloride
  48 Dicftlorcbrcrrtcmethane
  51 Chlorodibrancmethane
  55 Napthsilene
  58 4-Nitrophenol
  65 Phenol
  66 Bis(2-ethylhexyl)phthalate
  67 Butyl benzyl phthalate
  68 Di-N-biutyl phthalate
  70 Diethyl phthalate
  71 Dimethyl phtnalate
  78 Anthracene
  81 Phenanthrene
  84 Pyrenei
  85 Tetrachloroethylene
  86 Toluene
  87 Trichloroethylene
  95 Alpha-Endosulfan
 102 Alpha-BHC
 105 Delta-BHC

 Total Toxic Organics

 TOXIC ^ETACS

 114 Antimony
 115 Arsenic
 117 Beryllium
 118 Cadmium
 119 Chromium
 120 Copper
 122 Lead
 123 Mercury
 124 Nickel
 125 Selenium
126 Silver
127 Thallium
128  Zinc
Total Toxio Metals
•s?
      mg/1      kg/day
       Red Phosphor
         Effluent
      85274
      1703 - 450
      24
      Not
      Analyzed
       0.001
       0.002
       0.005
       0.065
       2.620
       0.013
       0.050
       0.001
       0.013
       0.020
       0.001
       0.001
       0.718
       3.423
0.003
0.107
0.0008
0.029
0.1398
                mg/1      kg/day
                  Total Plant
                    Effluent
                03683
                283875 - 75000
                24
                                O.OIO(B)
                                0.050
                                0.010
                                     (B)
                                O.OIO(B)
                                0.010
                                0.010
                            0.341
                                0.060
                               < 0.010
                               < 0.010
                0.010
                0.090
                0.030

                0.005
                0.005

                0.230
 0.052
 0.037
: 0.005
 1.310
 1.230
 0.045
 1.960
 O'.OOl
 0.047
 0.002
: 0.001
: o.ooi
 7.310
11.993
                           0.409
                                           0.613
                                           0.204
                                           1.567
 0.354
 0.252

 8.925
 8.380
 0.307
13.353

 0.320
 0.014
49.80
81.706
                                                IX-53

-------
NON-TOXIC METALS

    Calcium *
    Magnesium * •
    Sodium *
    Aluminum
    Manganese
    Vanadium
    Boron
    Barium
    Molybdenum
    Tin
    Yttrium
    Cobalt
    Iron
    Titanium
    Potassium
    Gallium
    Germanium
    Rubidium
    Strontium
    Zirconium
    Niobium
    Palladium
    Indium
    .Tellurium
    Tungsten
    Osmium
    Platinum
    Gold
    Bismuth
    Oranium
Total Non-Toxic Metals

OTHER POLLUTANTS
    Temperature  C
121 Cyanide, Total
    Oil & Grease
    Total Organic Carbon
    Biochemical Oxygen Demand
    Total Suspended Solids
    Phenols
    Fluoride
                                                TABLE 9-5C (COOT.)
                                           PICTURE TUBE PROCESS WftSTES
                                                (PLANT IDS 11114)
                                               •TREATMENT SYSTEM II
0.157
< 0.025
9.930
2.400
< 0.001
< 0.001
0.383
0.005
< 0.035
< 0.025
2.460
0.186
0.031
0.007
0.006

0.406
0.098


0.016
0.0002


0.101
0.008
0.001
0.0003
23.200
8.380
454.
4.100
0.037
0.002
9.420
0.186
< 0.035
< 0.025
0.237
< 0.050
9.930
0.045
158.1
57.09
3093.
27.9
0.252
0.014
64.18
1.267


1.615

67.65
0.307
NOt
Analyzed
 5.472    0.2245
                                         5.0
                                        32
Not Analyzed
 8
          0.327
 Not
 Analyzed
 23.957    163.185



  7.2

  0.002      0.014
 49
101
 71
 63
334
688.1
484
429
                          0.046
                                     0.313
Not Analyzed
                        480
                                  3270
 *Metals Not Included In Totals
                                                 IX-54

-------
                                                             •CABLE 9-6
                                                      APERTURE MASK PROCESS WASTES
                                                           (PLANT ID#  36146)
 Stream Identification
 Sample Numljer
 Flow Rate I,iters/Hr-Gallons/Hr
 Duration Hours/Day

 TOXIC  ORGAMICS

   1 Acenaptftene
   3 Acryloriitrile
   4 Benzene!
  11 1,1,1-Irichloroethane
  13 1,1-Dichloroethane
  23 Chloroform
  29 1,1-Dichloroethylene
;  30 1,2-Trans-dichloroethylene
  38 Ethylbenzene
  39 Fluoranthene
  44 Metnylene chloride
  48 Dichlorobrcmomethane
  51 Chlorodibrcitcraethane
  55 Napthalene   .
  58 4-Nitrophenol
  65 Phenol
  66 Bis(2-ethylhe3{yl)phthalate
  67 Butyl bsnzyl phthalate
  68 Di-N-butyl phthalate
  70 Diethyl phthalate
  71 Dimethyl phthalate
  78 Anthraoane
  81 Phenantlirene
,  84 Pyrene
  85 Tetxadiloroethylene
  86 Toluene
  87 Trichlojcoethylene
  95  Alpha-Eildosulfan
102  Alpha-BHC
105  Delta-HIC

Total Toxic Qrganics

PRIORITY MKi!ALS

114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chronium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
126 Silver
127 Thallium
128 Zinc
Total Toxic Metals
mg/1      kg/day
   Aperture Mask
   Etch Waste
M17-1-1
39515 - 10440
24
 0.060(B)  0.057
0.060
0.0005
0.005
0.005
0.0002
3.480
0.570
0.009
0.001
0.025
0.005
0.015
0.0005
0.193
4.2522
         0.057
0.0002
3.300
0.541
0.009
0.183
4.0332
                                                IX-55

-------
                                              TABLE 9-6 (COOT.)
                                        APERTURE MASK PROCESS WASTES
                                             (PLANT IDf 36146)
NON-TOXIC METALS

    Calcium *
    Magnesium  *
    Sodium *
    Aluminum
    Manganese
    Vanadium
    Boron
    Barium
    tfelybdenum
    Tin
    Yttrium
    Cobalt
    Iron
    Titanium
    Potassium
    Gallium
    Germanium
    Rubidium
    Strontium
    Zirconium
    Niobium
    Palladium
    Indium
    Tellurium
    Tungsten
    Osmium
    Platinum
    Gold
    Bismuth
    Uranium
Total Non-Toxic Metals

OTHER POLLOTANTS
    Temperature  C
121 Cyanide, Total
    Oil & Grease
    Total Organic Carbon
    Biochemical Oxygen Demand
    Total Suspended Solids
    Phenols
    Fluoride
 Not
 Analyzed
  3.1
 23
  2.1
  8.4
  4.0
 18
 52
< 0.002
 Not Analyzed
 1.992
 7.966
 3.793
17.07
49.315
*Matals Not Included In Totals
                                              IX-56

-------
           Trace Levels - Pollutants detected at levels too low
           to be measured quantitatively are reported as the value
           preceded by a less tlmn sign U-^.  All other pollu-
           tants are reported as^ihe' measured value.

      .  :   Mass Load - Total daily discharge in kilograms/day of
           a particular pollutant is termed the mass load.  This
        {   figure is computed by multiplying the measured concen-
        !   tration (mg/1)  by the water discharge rate expressed
           in liters per day.

           Sample Blanks - Blank samples of organic-free, distilled
           water were placed adjacent to sampling points to
           detect airborne contamination of water samples.  These
           sample blank data are not subtracted from the analysis
        ;   results,, but, rather, are shown as a (B)  next to the
           pollutant found in both the sample and the blank.

Television picture tube manufacture was sampled at  two plants.
Manufacture of steel aperture masks, used in subsequent picture
tube manufacturing,  was sampled at one plant.   Because of the
complexity of  picture tube manufacturing, segregation of the wet
processes  for  wastewater  sampling was impractical,  and discrete
process samples were not  obtained.   Many samples taken include
wastewater from more than one of the wet processes  listed in
Table 9--2.

Television Picture Tubes  - Two plants manufacturing television pic-
ture tubes were visited and sampled.   Tables 9-4 and 9-5 present the
analysis of raw waste and treated effluent discharge streams for
process water  usage  associated with television picture tube manu-
facture,,

Aperture Mask  Manufacture - One plant manufacturing aperture masks
was visa.ted and sampled.   Table 9-6 presents analysis of a raw waste
sample for process water  usage associated with aperture mask manu-
facture.

Summary of  Raw Waste Stream Data

Tables 9-7  and 9-8 summarize  pollutant concentration data for
the raw waste  streams  sampled  for the electron tube subcategory.
Minimum, maximum,  mean, and flow weighted mean concentrations have
been determined  for  the summarized  raw waste streams.   The flow
weighted! mean  concentration was calculated by  dividing the total
mass rates  (mg/day)  by  the  total flow rate (liters/day)  for all
sampled data for each parameter.  Pollutant parameters listed in
Tables 9-7  and  9-8 were selected based upon their occurrence and
concentration  in the  sampled  streams.   Those parameters either not
detected or detected  at trace  levels  in all sampled streams were
excluded from  these  tables.
                           IX-57

-------
S:
Si
     (*i *o m co o



           *o
                                                                           s
5
O
                     ooooioinoor-
                                         ro o o co o o o ^o g
                                                                     S
                                         r«j F-I VD o o ^« o\ o'o r* m
                                         r*mor»op*
                     fHiHrH^O^OOOiH


                     ooooaoooom
      ti o   »r**3


      II   ti
      o    0) 5
      •H to   o o


      ? Jl S5-H

      'li'SSg  J|
      ^H 4J t-« -^ g3  E

      'H'SSSH  o
             (n  *v4
      -<«;
-------
                                      TABLE 9-8

                            Summary of Raw Waste Data for
                              Aperture Mask Manufacture

                                     Plant 36146
Toxic Organics

Methylene chloride

Toxic Metals

118 Cadmium
119 Chromium
120 Copper
122 Lead
128 Zinc

Other Pollutants

121 Cyanide, Total
    Oil and Grease
    Total Organic Carbon
    Biochemical Oxygen Demand
    Total Suspended Solids
Concentration*
    (mg/D

     0.060
     0.0002
     3.480
     0.570
     0.009
     0.193
     2.1
     8.4
     4.0
    18
    52
    Single Stream Sample Value
                                  IX-59

-------
The manufacture of television picture tubes and of steel aperture
masks for use in television picture tubes were ' the only electron
tube product areas sampled.  The other two major electron tube
product types, transmitting and receiving, utilize process water
primarily for electroplating which is included iin the Metal Fini-
shing Category.                                |

Plants having wet processes other than electroplating are limited
in number and in most instances limited in process water usage.
These plants consist of those manufacturing cathode-ray tubes
other than television picture tubes and plants manufacturing
particular types of transmitting tubes.  These!plants have wet
processes similar to many found within television picture tube
manufacture.                                   i

Table 9-7 summarizes raw waste streams sampled|at two plants manu-
facturing television picture tubes, Plants 301?2 and 11114.  Plant
30172 was composite sampled for three 24-hour periods, and Plant
11114 was composite sampled for one 24-hour period.  Obtaining total
raw waste samples at both plants was impractical.  Therefore,
individual process raw waste samples are summarized to produce a
combined raw waste stream for each plant.  The total raw waste stream
developed for Plant 30172 includes all process wastes that, receive
wastewater treatment, but does not include untreated process- wastes
discharged directly.  The total raw waste stream developed for Plant
11114 includes all process wastes that receive wastewater treatment
as well as those process wastes that do not receive treatment.  The
untreated process wastewater flows are significant .and constitute 48
and 78 percent of the total process wastewater;at Plants 30172 and
11114, respectively.  These untreated process wastewaters predomi-
nantly include dilute rinse waters associated with wet process opera-
tions.  In addition, both facilities have raw pastes that are not
included in the summary raw wastes and are discussed below.

At Plant 30172 phosphor coating raw waste samples could not be
obtained prior to treatment because of the proprietary nature of
the process.  Phosphor coating raw wastes were|obtained at Plant
11114 and account for much of the differences between several
metals concentrations for the two plants.  These metals include
cadmium, zinc, and yttrium, all of which are prime constituents
of phosphor coating materials.                 !

At Plant 11114, eight of nine raw waste streams were sampled and
proportioned together as a total raw waste.  Tl^e ninth raw waste
stream was a hydrofluoric acid etch waste that;was discontinued
the week following the sampling visit.  'Therefore, this raw
waste stream was not included as a component o£ the summary raw
waste for this facility.

Table 9-8 presents raw waste concentration data for one sample
taken at Plant 36146.  This sample represents all process waste-
water from the manufacture of aperture masks by chemical etching.
                            IX-60

-------
In addition, an organics analysis of total raw waste was  not obtained
at the  two  facilities manufacturing picture  tubes.  However, indivi-
dual process wastes were sampled and analyzed for organic pollutants
if organic  pollutants were known to be used  in a particular manufac-
turing  process.  Therefore, organic analysis is not available  for
all sampled raw waste streams.  However, organic analysis is pre-
sented  for  the raw waste stream developed on a pollutant  mass  balance
on the  sampled streams at Plant 11114.  Organic analysis  is presented
in Table 9-8 for Plant 36146 which manufactures steel aperture masks.

Treatment In-Place

The following is a plant-by-plant discuss ton-of raw waste and  final
effluent process ^astewatecs sampled for this study at plants  manu-
facturing television picture tubes and aperture masks for use  in
television  picture tubes.  A discussion of waste treatment techno-
logies  presently in use at these same plants is also presented.
Table 9-9 summarizes treatment in-place and  effluent discharge des-
tinations of plants visited during this study.

Plant 30172 produces color television picture tubes.  Figure 9-7 de-
picts sampling locations and wastewater treatment at Plant 30172.
Sampling locations were selected on two bases.  First, wastewater from
many of the wet processes was sent to «H fire cent treatment systems
because of  the different pollutant characteristics of each process
waste stream,  Second, accessibility to process operations was
restricted  during the sampling visit.  Analytical results were
presented in Tables 9-4A, 9-4B, an'd 9-4C.

Wastewaters produced from red, green, and blue phosphor applica-
tions flow  to separate settling tanks*  Wastewater from the red
phosphor settling tank is subsequently sent  through a paper
filtration  unit.  The phosphors are recovered by gravitational
settling and returned to phosphor preparation.  The wastewater
is sent to  a final holding lagoon.

Process wastes from the tube salvage operation are sent to lead
treatment.  The wastes flow to a 6613 liter  (1800 gallon) treat-
ment tank where sodium carbonate is added.  The partially treated
wastes  are  sent through a sludge dewatering  unit.  Approximately fifty
208 liter (55 gallon) drums per year of carbonate sludge  are sent to
a toxic chemical landfill and the filtrate is sent to primary
treatment.  Samples were taken before and after lead treatment.

The photoresist solution and the deionized water developer
solution are sent to chromium treatment.  The chromium bearing
wastewater  is reduced'from the hexavalent to the trivalent state
using sulfuric acid and sodium bisulfite.  The partially  treated
wastes  then flow to primary treatment.  Wastewater samples were
taken before and after chromium treatment.
                              IX-61

-------
                         TABLE  9-9


                 ELECTRON TUBE  MANUFACTURE
     SUMMARY OF WASTEWATER TREATMENT AT  VISITED  PLANTS
Plant ID No.
    30172
    11114




    36146

    41122

    19102



    23337
 I « Indirect
 D * Direct
NA s Not Applicable
Treatment In-Place                  Discharge

Chemical precipitation and clari-      D
fication, multimedia filtration,
sludge dewatering, chromium reduc-
tion, phosphor settling, sludge
drying lagoon, solvent collection
and incineration, holding lagoon

Chemical precipitation and sedi-       I
mentation, pH adjustment, phosphor
settling
pH adjustment, settling                D

pH adjustment                          I

No Wet Processes For Electron          NA
Tube Manufacture      !
No Wet Processes For Electron          NA
Tube Manufacture
                              IX-62

-------
                           .
                       r* r-f 4 i
                         in V *
e *

3'*
'O *"
Q

03 .", '
         6  o
         P  3
    CO 0\ rH


    in in (*i^
    CO CO O




        •a
                                   Is
                                                 c
                                                 o
                                               44 '*•*
                                               at **
        si!
        u a s
        c o
s s s
fi o W
u o «
o us
  cu
cS «

-------
 Process wastewaters from the following operations receive no
 chemical waste treatment and flow directly to the final holding
 lagoon:  final deionized water rinses after photoresist applica-
 tion;  phosphor settling associated with screening; an ultrasonic
 cleaning rinse associated with mount assembly; ai funnel deter-
 gent clean rinse; the rinse that concludes paneli cleaning from
 the tube salvage process; and wastewater from a trichloroethylene
 carbon adsorption recovery system.

 All Bother process wastewatecs aot associated with phosphor appli-
 cation,  which include rinses from many oE the wejt processes, to-
 i/efchec with the partially treated wastes (from chromium d'ul l«d«l
 bceafcment,  flow to a primary fluoride treatment system.  Primary
 fluoride waste treatment is intended to reduce pollutant levels of
 metals,  solids,  and fluorides,  as well as to adjust the wastewater
 pH.  The wastes are sent to one of two holding tanks and then to a
 flash  mix tank where sodium bisulfite, calcium chloride, and lime are
 added.  A polyelectrolyte is added prior to sedimentation in a 113,550
 liter  (30,000 gallon)  clarifier.   The settled sludge is sent through
 a  rotary vacuum filtration unit and then to a sludge drying bed.
 Recently,  570,909 kg (628 tons) of dried sludge collected over an 8
 year period was sent to a toxic materials landfill.   The filtrate
 from the sludge dewatering unit is returned to trie clarifier.  The
 effluent from the clarifier flows through a series of dual-media
 sand/carbon filters and a holding lagoon before peing discharged to
 a  river.   All organic  solvents  from cleaning and!coating operations
 are  collected from their respective processes an<3 incinerated.
 Sampling within primary fluoride  treatment occurred at the
 following  locations:   prior to  rapid mixing;  after the clarifier,
 and  after  sand/carbon  filtration.               j

 Plant  11114 produces color television picture tubes.   Because of
 the  size  of the  plant,  process  wastewater is sent: to one of
 three  treatment  systems according to the locatioft of the waste-
 water  source within the facility.  Wastewater treatment consists
 of pH  adjustment,  settling,  and filtration.   In all  cases,  pH
 adjustment  is accomplished with sodium carbonate!and settling
 occurs in 18,925  liter  (5,000 gallon)  tanks.   All settled material
 is contractor removed.   Tables  9-5A,  9-5B,  and 9^5C  presented
 analytical  results,  and Figure  9-8 presents  waste treatment
 technologies  and  sampling  locations at Plant 11114.
                                                 i
One  treatment system receives hydrofluoric acid  (Containing
wastes from tube  salvage.   The  wastewater is  sent to a holding
 tank for pH  adjustment  before entering a settling tank.   A
 sample was  taken  of  these  wastes  prior to pH  adjustment and
 after  the  initial  settling.  Other wastewater from the tube
 salvage process  is  pH adjusted  and sent to another settling
 tank,  A sample was  taken  of  these wastes prior  to pH adjust-
 ment.  Wastewater  from  the  two  settling tanks flow together
 through a series  of  three  more  settling tanks and a  cartridge
filter.  Samples were taken before and after  the ; filtration unit.
                               IX-64

-------
0
r- '
r-4 f
tn v
CO
IT
C
—4

4->
U
O
cn
-
CP
c
.^
f-r
jj
4J



jc
c
u]
^





A:
c
j
          Rl
          u b
  o
Is
If
  u
                                  3 c
                                  4J nj
                                  4J ft
ir
                                  ;o
     -.
     a) a u
     •o > 
-------
 Wastewaters  from aperture mask degreasing and panel wash are pH
 adjusted  and settled.   This wastewater,  together with waste-
 water from the  filtration unit,  flows through three settling
 tanks prior  to  final  discharge to the municipal treatment system.
 Samples were taken of  aperture mask degreasing and panel wash
 wastewater prior to pH adjustment.   Samplesj were also taken of
 the  final treated effluent.                I
                                            i
 The  second treatment  system receives wastewater from another
 area of the  facility  containing  aperture ma^k hydrofluoric acid
 etching wastes.   These wastes  are first  pH Adjusted and then flow
 through three settling tanks.  Wastewater was sampled after the
 third settling  tank.   The process producing this wastewater was
 discontinued the week  following  the sampling visit.  Other pro-
 cess wastewater is pH  adjusted,  settled  twice,  and sent through
 a cartridge  filter.  This partially treated1 waste then flows to a
 finalsettling  tank together with the treated hydr9fluoric acid
 containing wastes.  Wastewater was  sampled prior to pH adjustment,
 after the filtration unit,  and before discharge to the municipal
 treatment system.                           j
                                            j
 There are some  additional hydrofluoric acidj containing wastes
 that are  pH  adjusted,  settled, and  sent  to the municipal treat-
 ment system.  Wastewater  was sampled before; and after this
 treatment process.

 The  remaining treatment system recovers  phosphor materials.   There
 are  six subsystems, two each for red,  greenl  and blue phosphors.
 In each subsystem,  phosphor coating solution flows to a holding
 tank,  then through  a settling  tank  and a ceiitrifugation filter
 before being  discharged to  the municipal treatment system.
 Samples were  taken  before and  after settling.   The filtration
 units were not  in  operation during  the sampling visit.

 All  treated  process wastewater,  untreated process wasteiwater,
 and  non-contact  cooling water  flow  together;to the municipal
 treatment system.   A composite sample was taken of this final
 plant effluent.                             j

 Plant 36146 produces steel  aperture masks foe use in color
 television picture  tubes.   The masks are produced by a photo-
 graphic etching  process.  A composite sample was taken of waste-
water from the  etching  process,  including both dumps and rinses,
 and  analytical  results  were presented in Takle 9-6.  Figure  9-9
depicts'the  sampling location  and wastewatei: treatment at this
plant.  The  etching wastewater is pH adjusted with lime and  sent
 to a settling pond  before discharge to a riyer.
                             IX-66

-------
                        Lime
                         1
 Aperture Mask
Formation Waste
M17-1-1
a
pH Adjustment


Settling
Pond
                                                      •River
                  FIGURE 9-9

SAMPLING LOCATION AND IN-PLACE WASTE  TREATMENT
                 PLANT 36146
                       IX-67

-------
 POTENTIAL POLLUTANT PARAMETERS              i

 Potential pollutant parameters for the electron tube subcategory
 are based on the list of pollutants presented in Table 9-3.
 Rationale for pollutant selection was based on information from
 the following:                              ;
                                             i
           Presence of toxic pollutants, non-toxic metals,
           and other pollutant parameters    ;

           Occurrence of pollutant as a raw material or process
           chemical in television picture tube and aperture mask
           manufacturing processes

           Treatability of pollutants at repotted concentration
           levels                            I
                                             i
           Toxicity of pollutants at reported\concentration
           levels                     ,       |

 Table 9-10 presents the potential pollutant parameters for the
 manufacture of television picture tube  products and steel aper-
 ture masks.                                  j
                                             1
 Tables 9-11 and 9-12 list pollutants not selected as potential
 parameters that were analyzed in the raw wastle streams sampled
 for television picture tube manufacture and aperture mask manu-
 facture.   Both Tables 9-11 and 9-12 present pollutants according
 to  the following classifications:   not  detected,  detected at trace
 levels or detected  at levels too low to be effectively treated
 prior to  discharge.   Pollutant concentration^  are determined to
 be  too low for effective treatment for  any or  all of the  following
 reasons:                                     !

           Levels of  treatability for many non-toxic parameters
           are  unknown.                       I
                                             i
                                             i
           Pollutants  are not selected if raw jwaste concentrations
           are  less  than  the long  term average!  concentrations
           established  for the levels  of recom'mended treatment.

Organic analysis was  not obtained  for total r|aw waste  samples  at
Plants 30172 and 11114,  which manufacture television picture  tubes.
Samples were obtained  and  organic  analysis .pe'rformed for  those
process wastes  either  known to discharge  or suspected  of  dis-
charging  organic pollutants.   The  remaining process wastes,
treated and untreated, should not  contain organic  pollutants.
Therefore, those organic pollutant  parameters!  found in  individual
process wastes  will become  relatively insignificant when  included
in  the total process raw waste stream.   For these  reasons,  organic
pollutants have  been selected  as potential  parameters  based upon
their known occurrence in  the  manufacturing  processes  and  their pre-
sence  in  the sampled streams.       '         !
                              IX-68

-------
                                    TABLE 9-10

                         POTENTIAL POLLUTANT PARAMETERS

                                        Television Picture Tubes
                  Aperture Masks
Toxic Org
-------
                                    TABLE 9-11
                     	POTENTIAL POLLOTANT PARAMETERS NOT
                 SELECTED FOR TELEVISION PICTURE TUBE MANUFACTURE

                         NOT DETECTED IN RAW WASTE STREAMS
 TOXIC ORGANICS
  2.  Acrolein                           47.
  3.  Acrylonitrile                      49.
  5.  Benzidine                          50.
  6.  Carbon Tetrachloride               52.
      (Tetrachloromethane)               53.
  7.  Chlorobenzene                      54.
  8.  1,2,4-Trichlorobenzene             56.
  9.  Hexachlorobenzene                  57.
 10.  1,2-Dichloroethane                 58.
 12.  Hexachloroethane                   59.
 14.  1,1,2-Trichloroethane              60.
 15.  l,l,2,2,-
-------
                               TABLE 9-11 CONTINUED
 93.
 94.
 96.
 97,
 98.
 99.
100.
101,

103.
104.
106.
107.
108.
109.
110,
111.
112.
i 4,4'-DDE  (P,P'-DDX)
 4,4'-DDD  (P,P-TDE)        129,
 Beta-Endosulfan
 Endosulfan Sulfate
 Endrin
 Endrin Aldehyde
 Heptachlor
 Heptachlor Epoxide  (BHC=Hexachloro-
   cyclophexane)
 Beta-BHC
 Gamma-BHC (Lindane)
 PCB-1242  (Arochlor  1242)
 PCB-1254  (Arochlor  1254)
 PCB-1221  (Arochlor  1221)
 PCB-1232  (Arochlor  1232)
 PCB-1248  (Arochlor  1248)
 PCB-1260  (Arochlor  1260)
 PCB-1016  s;(Arochlor  1016)
Toxaphene
2,3,7,8-Tetrachlorodibenzo-P-
Dioxin (TCDD)
OTHER POLLUTANTS

Biochemical Oxygen Demand
Xylenes
Alkyl Epoxides
                                IX-71

-------
                                    TABLE 9-11 (CON'T)

                                  DETECTED AT TRACE LEVELS
 TOXIC ORGANICS

  1.   Acenaphthene
  4.   Benzene
 13.   1,1-Dichloroethane
 23.   Chloroform (Trichloromethane)
 29.   lrl-Dichloroethylene
 30.   Ir2-Jrrans-Dichloroethylene
 38.   Ethylbenzene
 39.   Fluoranthene
 44.   Methylene Chloride (Dichloromethane)
 48.  DicW.orobromomethane
 51.  Chlorodibromome thane
 55.  Naphthalene
 65.  Phenol
 66.  Bis(2-ethylhexyl) Phthalate
 67.  Butyl Benzyl Phthalate
 68.  DiHSItButyl Phthalate
 70.  Diethyl Phthalate
 78.  Anthracene
 81.  Phenanthrene
 84.  Pyrene
 95.  Alpha-Endosulfan
102.  Alpha-BHC
105.  Delt?L-BHC (PCB-Polychlorinated
      Biphenyls)
129.  2,3,7,,8-TeteachlorQdibenzo-P-
      Dioxin (TCDD)
TOXIC METALS

117.  Beryllium
123.  Marcury
125.  Selenium
127.  Thallium

OTHER POLLOTftNTS

Phenols
                                   IX-72

-------
                              TABLE 9-11 CONTINUED

                  DETECTED AT LEVELS NOT REQUIRING TREATMENT
TOXIC METALS

120.  Copper
124.  Nickel
126.  Silver

NON-TOXIC METALS

Aluminum
Manganese
Vanadium
Molyix3enum
Tin
Cobalt
Titanium

OTHER POLLUTANTS

121.  Cyanide, Total
      Total Organic Carbon
    Single Stream Sanple Value
     Developed
  Flow Weighted
Mean Concentration*
       mg/1

     0.059
     0.076
     0.004
     6.055
     0.019
     0.005
     0.050
     0.039
     0.101
     0.089
     0.002
   134.6
                                  IX-73

-------
                                   TABLE  9-12
                   POTENTIAL IOLLUTANT PARAMETERS NOT SELECTED
                          FOR APERTURE MASK MANUFACTURE  j
                                                         I
                        NOT DETECTED IN RAW WASTE STREAMS
TOXIC ORGANICS
 1.  Acenaphthene                        47.
 2.  Acrolein                            48.
 3.  Acrylonitrile                       49.
 4.  Benzene                             50.
 5.  Benzidine                           51.
 6.  Carbon Tetrachloride                52.
     (Tetrachloromethane)                53.
 7.  Chlorobenzene                       54.
 8.  1,2,4-Trichlorobenzene              55.
 9.  Hexachlorobenzene                   56.
10.  1,2-Dichloroethane                  57.
11.  1,1,1-Trichloroethane               58.
12.  Hexachloroethane                    59.
13.  1,1-Dichloroethane                  60.
14.  1,1,2-Trichloroethane               61.
15.  1,1,2,2,-Tetrachloroethane          62.
16.  Chloroethane                        63.
17.  Bis(Chloromethyl)Ether              64.
18.  Bis(2-Chloroethyl)Ether             65.
19.  2-Chloroethyl Vinyl Ether (Mixed)   66.
20.  2-Chloronaphthalene                 67.
21.  2,4,6-Trichlorophenol               68.
22.  Parachlorometa Cresol               69.
23.  Chloroform (Trichloromethane)       70.
24.  2-Chlorophenol                      71.
25.  1,2-Dichlorobenzene                 72.
26.  1,3-Dichlorobenzene                 73.
27.> 1,4-Dichlorobenzene                 74.
28.' 3,3'-Dichlorobenzidine
29.  1,1-Dichloroethylene                75.
30.  1,2-Trans-Dichlorethylene
31.  2,4-Dichloropropylene               76.
32.  1,2-Dichloropropane                 77.
33.  1,2-Dichloropropylene               78.
     (1,3-Dichloropropene)               79.
34.  2,4-Dimethylphenol                  80.
35.  2,4-Dinitrotoluene                  81.
36.  2,6-Dinitrotoluene                  82.
37.  1,2-Diphenylhydrazine
38.  Ethylbenzene                        83.
39.  Fluoranthene
40.  4-Chlorophenyl Phenyl Ether         84.
41.  4-BrornDphenyl Phenyl Ether          85.
42.  Bis(2-Chloroisopropyl) Ether        86.
43.  Bis(2-Chloroethoxy)Methane          88.
44.  Methylene Chloride                  89.
     (Dichloromethane)                   90.
45.  Methyl Chloride (Chloromethane)     91.
46.  Mathyl Bromide (Bromomethane)
                                         92.
Bromoform  (Tribromomethane)
Dichlorobromomethane
Trichlorofluoromethane
Dichlorodifluoromethane
Chlorodibroijnome thane
Hexachlorotnli t ad iene
Hexachlorocyclopentadiene
Isophorone  i
Naphthalene i
Nitrobenzene
2-Nitrophenol
4-Nitrophenol
2,4-Dinitrophenol
4,6-Dinitro~O-Cresol
NHSIitrosodinTethylamine
N-Nitrosodiphenylamine
NHdtrosodi-N-Propylamine
Pentachlorophenol
Phenol
Bis(2-ethylhexyl) Phthalate
Butyl Benzyl Phthalate
DiHfl-Butyl Phthalate
Di-N-Octyl i>hthalate
Diethyl Phthalate
Dimethyl Phii>alate
1,2-Benzant^iracene (Benzo(A)Anthracene)
Benzo (A) Pyrene (3,4-Benzo-Pyrene)
3,4-Benzofluoranthene (Benzo(B)
Fluoranthene)
11,12-Benzofluoranthene (Benzo(K)
Fluoranthen^)
Chrysene
Acenaphthylene
Anthracene  \
1,12-^enzoperylene(Benzo(GHI)-Perylene)
Fluorene    !
Phenanthrene
1,2,5,6-Dibenzathracene(Dibenzo (A,H)
Anthracene)i
Indeno(1,2,3-CD)Pyrene(2,3-0-Phenylene
Pyrene)     ,
Pyrene      !
Tetrachloro^thylene
Toluene     i
Vinyl Chloride (Chloroethylene)
Aldrin      !
Dieldrin    I
Chlordane(Technical Mixture and
Metabolites)
4,4'-DDT    i
                                     IX-74

-------
                               TABLE  9-12 CONTINUED
  93.   4,4'-DDE (P,P'-DDX)
  S>4.   4,4'-DDD (P/P-TDE)
  95.   Alpha-Endosulfan
  96.   Beta-Endosulfan
  97.   Endosulfan Sulfate
  98.   Endrin
  99.   Endrin Aldehyde
 100.   Heptachlor
 101.   Heptachlor Epoxide  (BHC=Hexachloro-
        cyclophexane)
 102.   Alpha-BHC
 103.   Beta-BHC
 104.   Gamma-BHC  (Lindane)
 105.   Delta-BHC  (PCB-Polychlorinated
        Biphenyls)
 106.   PCB-1242 (Arochlor 1242)
 107.   PCB-1254 (Arochlor 1254)
 108.   PCB-1221 (Arochlor 1221)
 109.   PCB-1232 (Arochlor 1232)
 110.   PCB-1248 (Arochlor 1248)
 111.   PCB-1260 (Arochlor 1260)
 112.   PCB-1016 (Arochlor 1016)
113.  Tbxaphene
129.  2,3,7,8-Tetrachlorodibenzo-P-
      Dioxin (TCDD)
OTHER POLLUTMCTS

Xylenes
Alkyl Epoxides
                               IX-75

-------
                               TABLE 9-12 OONT.

                            DEHiCTEDAT TRACE LEVELS
TOXIC METALS

114.   Antimony
115*   Arsenic
'117.   Beryllium
123.   Mercury
124.   Nickel
125.   Selenium
126.   Silver
127.   Thallium

OfflER FOmJTANTS

Phenols
                            AT LEVELS NOT REQUIRING -TREATMENT
TOXIC OSGftNICS

 87.  Trichloroethylene

TOXIC METALS

118.  Cadmium
122.  Lead
128.  Zinc

OTHER POLLUTANTS

121.  Cyanide, Total
      Total Organic Carbon
      Biological Oxygen Demand
                                            Mean Concentration*
                                                   •Ong/1)

                                                       0.060
                                                       0.0002
                                                       0.0009
                                                       0.193
                                                       2.1
                                                       4.0
                                                      18
* 3 Single Stream Sample Value
                                   IX-76

-------
 Aluminum and  titanium are  presented in Table 9-11 as metals detected
 at  levels not requiring  treatment.   Although both metals are at •
 treatable levels,  they have  not  been selected as potential pollutant
 parameters for two reasons.   First, both metals  in the elemental form
 are not  considered to be highly  toxic.   Secondly,  both metals will
 be  treated incidentally  by any of  the three levels of recommended
 treatment to  acceptable  concentration levels.

 Table  9-12 presents  potential pollutant parameters not selected
 for aperture  mask  manufacture as sampled at one  facility.   Cyanide
 is  listed as  a parameter detected  at too low a level to require
 treatment.  Although the reported  concentration  level is treat-
 able,  cyanide is not used  in the manufacture of  aperture masks.
 Cyanide  is used in electroplating  processes also found at this
 facility,  and it is  believed that  this  is the origin of this
 pollutant.  Therefore, cyanide is  not selected as a potential
 pollutant parameter.

 APPLICABLE TREATMENT TECHNOLOGIES

 Based  on  the  potential pollutant parameters selected and actual
 treatment technologies observed  within  the  electron tube industry,
 the  following  treatment  technologies are recommended for pollutant
 control within this  subcategory:

           Chemical precipitation and sedimentation
           Fluoride treatment
           Chromium reduction
           Settling
           Sludge dewatering
           Multimedia filtration
           Final pH adjustment
           Solvent  collection and removal

These  technologies are discussed in detail  in Section XII  of
 this report.

Recommended Treatment Systems

Alternative waste  treatment  technologies are  presented for the
electron  tube  subcategory.   Treatment technologies are defined for
process wastes  from  the  manufacture of  television  picture  tubes  and
steel  aperture masks.  The following  discussion  presents three levels
of waste  treatment for television picture tube and steel aperture  mask
manufacture.
                              IX-77

-------
 Level 1 - Recommended treatment for each levelj requires three treat-
 ment systems,  two for picture tubes and one for aperture masks,  to
 control the great diversity of process wastes.'  Level 1 treatment is
 presented schematically in Figure 9-10 and combines the following
 technologies into three separate treatment systems.

           Solvent collection and removal      ;
      .     Chemical precipitation and sedimentation for concen-
           trated metal wastes employing chemical additions of
           lime,  sodium carbonate, a coagulant aid, and a polyelec-
           trolyte                             ;
           Fluoride treatment to precipitate caicium fluoride
           with the use of lime and calcium chloride
           Chromium reduction with the use of sjalfuric acid and
           sodium bisulfite                    i
           Settling and reclamation of phosphor; wastes
           Sludge dewatering
           Final  pH adjustment                 \

 Level 2  - Recommended treatment consists of Level 1 treatment with an
 additional multimedia filtration step on all three treatment systems.
 Level 2  treatment is  depicted in Figure 9-11.  j

 Level 3   - Recommended treatment consists of Level 2  treatment
 with  the addition of  water reuse where possible.   Level 3  recommended
 treatment for  aperture mask manufacture reuses!100% of treated
 process  wastewater.   Level 3 recommended treatment for television
 picture  tube and aperture mask manufacture reuses approximately
 60% and  100% of  treated process wastewater,respectively.   Figure
 9-12 presents  Level 3  treatment for television;picture tube  and
 aperture mask  manufacture.                     j

 Performance of In-Place Treatment Systems

 The performance  of treatment technologies that!have been  sampled
 in-place for the  electron tube subcategory is presented in Tables
 9-13 through 9-18.  The manufacture of television picture  tubes was
 observed and sampled  at two facilities,  Plants!30172  and  11114.
 The manufacture  of steel aperture masks was  observed  and  sampled  at
 one facility,  Plant 36146.   Tables 9-13,  9-14,;and 9-15 present per-
 formance of treatment  technologies and systems!for Plant  30172.
 Tables 9-16, 9-17, and  9-18 present performance  of treatment tech-
 nologies  and systems  for Plant 11114.   No performance  of  in-place
 treatment  is available  for  Plant  36146 as only I a  raw  waste sample
was obtained.  Sample  numbers  and stream identification as pre-
 sented in  Tables  9-13  through  9-18 correspond to  sampling  location
 and sample numbers of  in-place treatment presented previously  in
Figures  9-7 and  9-8.  Other types  of  electron tube manufacture
were observed  but not sampled.  However,  process  water usage  at
                             IX-78

-------
                             z
                             Ed

                             1
                             ca
                             g
       S.2
 II
   H
s
«
3
•m
S
I
S
5
                             01
                             <
                             E
                   o a
                   I S-
                     Cu i.
                   ca < t
       1§
              E U
              S 01
              15
                            u
                             Q b
                             E-l
                             S
       Sg
                             s>
                             a
       rTTT
it it
             it
                    I-
         IX-79

-------
« e
S °
•o >»4
ei u
a a

3 £
                                                                                                      •s
                                                                                                      Cd
                                                                                                      ca
                                                                                                      1

                                                                                                      Mi
                 15
                                                                  •H  O
c to

5
                                                                   X *
                                                                  •H-U C

                                                                  &"* 
                                                                                                      u
                                                                                                      j
                                                                                                      u
                                                                  3 2
                       TTT
                •32
                        IX-80

-------

8.
S:













Fluoride

i*
•4
J
1













S
a





£-"•"
tj
5H*"

•MWMI^


I*



:
~
4
(
1
1
1
•1
J
?






•*•
1
»*
•H4.
§7
8]
c
,


Lead J Holding
]
1
i
1
3
^
I

Filtration

I



:•§
•n
«
& Sediment



I





-

• ^















s
a
u
5














Id
•H
•H















""•












|


r












o
u





0. NaHSO
t t
X




4
'
•
'
',

S
1
•H
|

i B. ^




n n '
i" i 
-------
                                   TABLE 9-13
Parameter

Sairple Number

TOXIC METALS

114 Antimony
115 Arsenic
118 Cadmium
119 Chromium
122 Lead
128 Zinc

NCKKEOXIC JffiTALS

Boron
Barium
Iron
Yttrium

OTHER EOLU7TANTS

OH and Grease
Total Suspended Solids
Fluoride
pH
 PERFORMANCE OF IN-PLACE TREATMENT TECHNOLOGIES

Plant 30172 - Chemical Precipitation and Settling
                                    ]
              Influent Concentration!   Effluent Concentration
                        (mg/1)                   (mg/1)
                        85125
                        0.092
                        0.250
                        1.070
                        4.670
                      891.
                     1510.
                      346.
                      205.
                     1940.
                       16.80
                       11.
                     190.
                     160.
                       <2.0
 85126
 <0.015
  0.010
 <0.005
  0.027
  1.9
 11.4
395.
 12.4
  0.378
 <0.008
 14.
 17.
 76.
  7.3
                                  IX-82

-------
                                   TABLE 9-14
                 PERFORMANCE OF IN-PLACE TREATMENT TECHNOLOGIES
        I

Plant 30172 - Chemical Precipitation and Sedimentation in a Clarifier
Parameter



Sample Numbers

Toxic Metals

114 Antimony
115 Arsenic
118 Cadmium
119 Chrcmium
122 Lead
128 Zinc

Non-Toxic Metals
        i
Boron
Barium  !
Iron    j
Yttrium |

Other Pollutants

Oil and Grease
Total Suspended
  Solids
Fluoride
pH      ;
  Influent Concentration
        (ing/1)
Day 1
85127
0.188
0.100
0.215
2.470
20.700
6.770
9.170
1.100
7.720
2.290
Day 2
85138
0.126
0.102
0.135
3.150
11.200
5.120
9.520
0.586
8.640
1.290
Day 3
85137
0.146
0.160
0.163
2.980
10.600
6.340
7.080
0.626
9.320
1.470
 14

130
260
  2.7
 11

 88
270
  2.1
 12

 50
490
  1.7
                           Effluent Concentration
                                    (mg/1)
                                     Day 1
                                     85128
                                     0.146
                                     0.008
                                    <0.002
                                     0.292
                                     0.273
                                     0.112
                                     1.880
                                     0.182
                                     0.197
                                     0.006
10

 2
 6.5
 8.5
                                     Day 2*
                                     85132
                                     Day 3
                                     85136
                                               0.119
                                               0.010
                                              <0.002
                                               0.195
                                               0.233
                                               0.150
                                               2.060
                                               0.150
                                               0.262
                                               0.005
830
  3
  7.7
  8.1
    Sample Lost
                                     IX-83

-------
                                   TABLE 9-15
                 PERFORMANCE OF IN-PLACE TREATMENT TECHNOLOGIES
                      Plant 30172 - Dual-Media Filtrajtion
Parameter



Sample Numbers

TOXIC METALS

114 Antimony
115 Arsenic
118 Cadmium
119 Chromiisti
122 Lead
128 Zinc

NON-TOXIC METALS

Boron
Barium
Iron
Yttrium

OTHER POLLUTANTS

Oil and Grease
Total Suspended
  Solids
Fluoride
PH

* 3 Sairple Lost
 Influent Concentration
          (rog/1)
 Day 1
 85128
 0.146
 0.008
<0.002
 0.292
 0.273
 0.112
 1.880
 0.182
 0.197
 0.006
10

 2
 6.5
 8.5
Day 2*
85132
Day 3
85136
          0.119
          0.010
         <0.002
          0.195
          0.233
          0.150
          2.060
          0.150
          0.262
          0.005
        830

          3
          7.7
          8.1
                         Effluent Concentration
                                   (mg/1)
Day 1
03662

0.117
0.010
<0.002
0.247
0.152
0.055
'

1.530
0.155
0.048
<0.003
Day 2
85130

0.136
0.008
<0.002
0.250
0.228
0.110

2.450
0.142
0.227
<0.003
Day 3
85134

0.106
0.010
<0.002
0.128
0.109
0.059

2.090
0.135
0.071
<0.003
               1.4
              10
               8.5
37

 7
 8.2
 6.9
20

 1
15
 7.8
                                  IX-84

-------
                               o
                               r-
                               CM
                               in
                               oo
                                      o in o o
                                 vovo r- o o o
                                 O o co co oo oo

                                 oo o o co CM
                                           rH CO
                                                               coo en
                                                             o o ^ TJ<
                                                             ** mo o
                                                              •  •  •  •
                                                             Cn O CM O
                                                                                              VO
                                                                                         oo
                        c *-•
                    VO
                    CN *
                    in co
                    oo r-
                     I vo
                    r» co
                    oo o
                    vo
                       SCM r*- o ^> o
                       r-- vo in en ••»
                    O *"•! CO *3* VO CO

                    OO O O O CM
                                                             oo in o **
                                                             m co m rf
                                                             r- •>» in 01
                                                              •   •  •   •
                                                             VO r-t rH r-t
                                                                                         mo
                                                                                         men
§5
                               en
                               vo
                               CM
                               in
                               co
                                 VO VO iH P* O O
                                 ^j«in o CM ^r o
                                 OiH CM O VO rH


                                 OO O O VO 00
                                                               «r> o co
                                                             o vo CM in
                                                             O iH rH O
                                                              •  •• •   •
                                                             00 O iH O
                                                                                              O
                                                                                               •
                                                                                              vo
vo
1
en
as

-------
              4J

              C—>
                                OH oi in o in co
                                r- vo oin IH rH
                                o o o f en en
              Si
                                O O
                                           O O
                           w
              W
                     in
                     CO
                     VO
                     *
                     vo
                     CO
                     vo
                     CO
                     vo
                     m
                     o
                                           VO ON CM CTl CM tH
                                           •<• O tH CO rH  co en
                                                        n in co o
                                                        o o mjo
                                                        rH    en,
                                                      in
                                                 mo.
                                                 ro o r»
                                                                           co
                                                                                            co a\
                                                                                            oo CM
                                                                                               CM
                                                                                               CM
M
H
i
Piltrat:
ce
4J
> o CM
                                                                                 en o
                                                                                 rH CO
               I*-*   O
                                   §O rHO OO
                                   r- co CM o\co
                                CM in OO
                                                                      p» Oi«n
                                                                      co in CM
                                                                      o o o
                                   rH O C3 CO rH
                                                        ro o
                                                                                 CO O
                                                                                 m o
                                                                                    in
                                                                                                               (0

                                o o ino oo
                                O O rro CM O
                                o o coin co m
                                CM
                                           VOO
                                                                      O Of
                                                                      rH OW
                                                                      rH CMO
                                                                       •  •f  •

                                                                   CM in CM O
                                                                   VO    CM
                                                                   CO      i
                                                                              ro
                                                                            0)  
-------
                          I,
                       CM
                       00
                       vo
                       PO
                       o
                                                                                            in    o
                                                                                            o    oo
                                                                                            in    o
                                                                                                    in
                  (0
oo
3
                                              •* CMO  O O
                                              o oo  oo in o
                                              o o vo  PO o I-H
                                              O OiH
                                                 VrH
                                            CM O Cn
                                               ViH
                                                             »» OO •<* e'-
                                                             en pO CD PO
                                                             o mo o
                                                              •  •  •  •
                                                             o oo o
                                                                                                  PO
                                   rH VO    O O
                                   o o    P» in
                                   o o    en o
                                              o
                                              V
                                                   00
                                                                        o inro ft
                                                                        en CN)  co o ^
                                                                         •  •  •   •
                                                                        CM OO O
                                                                                       o
                                                                                       in
                                   o OCM
                                   o o o
                                                       O O
                                                       in in o
                                                      i«- o m
 CMOS 01
 in o **
i in o 1-1
                                   o oo ro o r-t
                                   v v       v PO
                                              r-t C>JVfi> O O
                                              o om co in
                                              o or* ^> o

                                              o oo n« o f-i
                                                         v en
                        vo
                        ro
                                                                                                       in
                                                             CM iH ^J1 O
                                                             o in CM vo
                                                             O rHO rH
                                                              •  •  •   •
                                                             O OO CO
                                                             V
                                                                                                  vo
                                                                                                  in
                                                                                                  CM
                                              rH CM Irt O O 00
                                              O OVO CM m rH
                                              o oo vo or-

                                              O OO CM C3CS
                                              V V      V
                                              rH COO O O O
                                              o OCM rH in vo
                                              O OrH t*-OOO

                                              o oo rn 
-------
these facilities is predominantly from electroplating and is thus
part of the Metal Finishing Category and not presented in this
document.  The remaining process water usage at these plants is
characteristically similar to that found at many picture tube
facilities.  Therefore, treatment technologies are transferable from
plants manufacturing television picture tubes 'to those manufacturing
other types of electron tube products.        i
                                              i
Because of the size and complexity of television picture tube
manufacture/ process wastewaters are not treated as a single
total raw waste.  Treatment technologies are employed in accor-
dance with industrial process raw waste characteristics as well
as the physical location within the facility, j

Collection and removal of sspent solvents, oil,! and photoresist
solutions were observed at Plants 30172 and 11J114.  Both plants
have good organic solvent collection and disposal procedures.

Performance of treatment components and systems is presented for
Plants 30172 and 11114.  A total raw waste sample only was
obtained at Plant 36146.  Therefore, no performance of in-place
treatment is presented for this facility.

Performance of Recommended Treatment Systems

Performance of the three levels of recommended treatment for
television picture tube and aperture mask manufacture are pre-
sented in Tables 9-19 and 9-20,respectively.  [Performance is based
on sampling data obtained from visited plants]in the E&EC category
as well as data from other industries.  Because of similarity in
raw waste characteristics to other industries, performance of treat-
ment technologies is applicable to the E&EC category.  Section XII
describes treatment components, systems, and performance achievable
by the recommended treatment technologies.    !
         1                                     i
None of the three levels of recommended treatment for aperture
mask manufacture were observed in-place at any of the visited plants.
Level 1 recommended treatment for television picture tube manufacture
as presented previously in Figure 9-10 was not observed in  its en-
tirety at any visited facility.  However, a close approximation  in-
corporating all treatment components utilized!in the Level  1 system
was observed and sampled at Plant 30172.  In addition, waste stream
location within the recommended treatment system is very similar  to
that observed at Plant 30172.                 |
                                              j
Level 2 treatment for television picture tubejmanufacture includes
the addition of multimedia filtration to the recommended Level 1
system.  Level 2 treatment for television picture tube manufac-
ture improves metals- removal performance whil4 lowering the suspended
                              IX-88

-------
01
 ro
                                        *
                                        *
                                        o
                                        en
                                        CM
                    *      *
                    * *    *
                    « *    «
                    o in t— co
                    .H *j> in o
                    CO rH CM O
                     •  •  •  •
                    rH O O O
                                                                                                                          s
                           *  * *  *
 in
 •H m ** CM
; o «* o co
                                                                          r— en   ^r
                                                                          ro co ro o
                                                                          co .H ro o
                           * * *  *
                                                       I O CM rH r-
                                                       '  «  a   •  •

                                                        O rH O O
                                                                          .H I
                                                                          (N •
                                                                              1   en
                                                                                in o
I

CM
                                                        OJ CN O •-(
                                                   in in 1-1 r~ in in
                                                   o o o in o m
                   •K *    *
                   * *    «
                   * *    *
                   o ^o t*- vo
                   r~ ko o\ o
                   o> r-i r- o
                     •  •  • •
                   rH O O O
                                                                                             CA co ro

                                                                                             1-1 r- in
                                                   p- r» cs o r- 01
                                                   o o o co o r-
                                                  o o o o o o
                                                                          S!
                     i r-   co
                    -I r-4 ««1* O
                    in (N o o
                           * *  * *
                                                  in in -cj« m in in
                                                  •H iH O C>1 i-l VO
                                                  O O O CM O r-l
                   o co -H •-!
                   r~ i< fo o
                                      in vo *a*
                                       •  •  •

                                      ro in >*
                          * *  * *
                a
                fi
                          rH *S" VO [—

                          rH T9< CO CO
                                                      rH    <1) •
                                                      rH  • rH

                                                      £§>;§
                                                                                                          s
                                                                                                          38^1
                                                                                                          >  S.2*
                                                                                                          
-------
      M i I

       ST"-1


       111
 CJ
 l-l

 s
cu


u
in oo
iJ1 •»
     a-i!
       Sx
       s

     B 
-------
solids and oil and grease  levels.  This occurs  because  some  of  the
metal hydroxide precipitate formed during  chemical precipitation
will be further removed by the addition of multimedia filtration
in  the Level 2 treatment system.  This additional treatment  tech-
nology was observed and sampled at Plant 30172, and  therefore,
approximates the Level 2 recommended  treatment  system.

Level 3 treatment for television picture tube manufacture does  not
include any treatment technology additional  to  the recommended
Level 2 system.  Pollutant discharge  from  television picture  tube
manufacture is reduced significantly  by reuse of treated wastes.
It  is estimated that 60-70 percent of the  treated wastes are
sufficiently purified for process reuse.  Level 3 treatment was not
observed at any visited plants.

All levels of recommended  treatment for television picture tube
manufacture include the collection and removal  of organic solvents.

Concentration levels in the sampled effluents of Plants 30172
and 11114 for organic pollutants were detected  at levels less
than that requiring treatment.  However, because of  their
acknowledged use in the manufacturing process,  four  toxic organic
pollutants have been selected as potential pollutant parameters
as  have total organics.  A total organic concentration  level  of
.290 mg/1 has been established for television picture tube
manufacture.  This is based on a total organic  concentration
level of a sampled effluent at Plant  11114.  Collection and re-
moval of organic solvents is discussed in detail in  Section XII.

Table 9-21 compares performance of observed  and recommended treat-
ment for the electron tube subcategory.  Performance of observed
treatment is based on data obtained from two television picture
tube manufacturers, Plants 30172 and  11114.  No performance of
observed treatment is available from  the one aperture mask manu-
facturer sampled, Plant 36146.  This  comparison supports the
transfer of performance data from the Metal  Finishing Category
as evidenced by the relative similarity in effluent  concentration
levels of these streams.  Comparison  of Level 3 treatment perform-
ance does not appear in Table 9-21 as it was not observed in-place
at any visited facilities.

Performance of Level 1 and 2 observed treatment as presented  in
Table 9-21 for toxic metals, non-toxic metals,  and other pollu-
tant parameters was obtained from Plant 30172.  This performance
data was previously presented in Tables 9-14 and 9-15.  Table
9-14 presented a Day 1 and Day 3 effluent oil and grease concen-
tration of 10 mg/1 and 830 mg/1, respectively. - The  calculated
mean as presented in Table 9-21 is 420 mg/1.  The Day 3 and the
calculated mean concentration levels do not  coincide with histor-
ical plant performance data or with the concentration level
                             IX-91

-------
                                        TABLE 9-21
                                ELECTRON TUBE SUBCATEGORY
                 COMPARISON OF OBSERVED AND RECOMMENDED TREATMENT SYSTEMS
Parameters

TOXIC ORGANICS

 11  1,1,1-TricU.oroethane
 44  Methylene chloride
 86  Toluene
 87  Trichlorpethylene

Total Toxic Organics

TOXIC METALS

114  Antimony
115  Arsenic
118  Cadmium
119  Chromium
122  Laad
128  .Zinc

NON-TOXIC METALS

     Boron
     Barium
     Iron
     Yttrium

OTHER POLLOTANTS

     Oil and Grease
     Total Suspended Solids
     Fluoride
                              Level 1"
                              Observed
                              Treatment
                                mg/1
    *
    *
    *
  0.290**
  0.133
  0.009
  <.002
  0.244
  0.253
  0.131
  1.970
  0.166
  0.230
  0.006
420
  2.5
  7.1
               Level 1B
              Recommended
               Treatment
                 mg/1
   *
   *
 0.290**
 0.05
 0.05
 0.012
 0.572
 0.050
 0.551
 1.970
 0.166
 0.797
 0.006
11.9
17.8
15.3
              Level 2A
              Observed
              Treatment
                mg/1
 0.290**
 0.112
 0.010
<0.002
 0.188
 0.131
 0.057
 1.810
 0.145
 0.060
 0.003
12.5
 1.2
12.5
              Level 2B
             Recommended
              Treatment
                mg/1
                  *
                  *
                  *
 0.290**
  NA
  NA
 0.011
 0.319
 0.034
 0.247
 1.810
 0.145
 0.257
 0.003
 7.1
12.7
 4.76
 A s Mean Concentration Of Day 1 And Day 3 Sampled Stream^ As Presented In Tables
     9-14 And 9-15.                                      ;
 B » Mean Concentration Obtained From Table .9-19.        j
 * » Included In Total Toxic Organics                    j
** * This Figure Is The Concentration Of The Sampled Effluent From Plant 11114.
                                          IX-92

-------
detected for ,the.Day 1 sampled effluent.  In addition, the  three
days of sampled  influent presented in Table 9-14 appear at  much
lower and consistent concentration levels than the Day 3 sampled
effluent.  It is for these reasons that the Day 3 concentration
level of 830 mg/1 has not been included in determining the  perform-
ance of oil and  grease removal by the recommended treatment systems,

Estimated Cost of Recommended Treatment Systems

The determination of estimated costs for recommended  treatment
system components is discussed in Section XIII of this report.
Tables 9-22 through 9-28 show the estimated costs for each  of
the recommended  treatment systems discussed previously for  the
electron tube subcategory.  Costs have been estimated for Levels
1,2, and 3 recommended treatment for television picture tube
and aperture mask manufacture.  The variation in system costs
resulting from changes in system flow rate are presented for two
flow raites associated with television picture tube manufacture
and one flow rate associated with aperture mask manufacture.  The
two flow rates for television picture tube manufacture are  char-
acteristic of medium and large size facilities.  The  one flow
rate presented for aperture mask manufacture is typical of  all
known aperture mask manufacturers.  These costs do not reflect
treatment already in-place in the electron tube subcategory that
are designed to  treat electron tube manufacturing .wastes exclu-
sively.;  Similarly, these costs may be misleading because they
do not account for mixing wastewaters from electron tube manu-r
facturing with wastewaters from other manufacturing 'processes
(such eis electroplating) for treatment in existing wastewater
treatment facilities.

BENEFIT ANALYSIS

This section presents an analysis of the industry-wide benefit
estimated to result from applying each of the three levels  of
treatment previously discussed in this section to the total
process wastewater generated by the electron tube subcategory.
This analysis estimates the amount of pollutants that would not
be discharged to the environment if each of the three levels of
treatment were applied on a subcategory-wide basis.   An analysis
of the benefit versus estimated subcategory-wide cost for each
of the treatment levels will also be provided.

Industry-wide Costs

By multiplying the annual and investment costs of each level of
treatmesnt at various flow rates by the number of plants in  each
flow regime in the industry, subcategory-wide annual  and invest-
                             IX-93

-------
                              co
                              vo
                     W EH
                     Pn CO
                     MO
                     0,0

                     fa S
                     o ca
                      I  EH
                     Q CO
                     ZX
                     ca co
                             CO
                             CO
                             m
                                o
                                CO
                                CM
                                00

                                CO
                                        CO
                                        03
                                        en

in
r-
oo
•
CO
C«I
r*
vo
iH
rH

in
r-
co
•
n«
r--
CO
vo
r-
CM

in
CM
vo
•
vo
00
CO
co
CM
CM
i
;
*a»
00
vo
•
ov
vo
CO
-H
•-4

O
O
in
•
•<3«
in
co
CO
CN
vo
                             i-H
                             CO
                             in
01
EH
CQ
O
   EH

   ca z
   S 63
CMEH S
Nrf! EH
 I  "
  EH OS
Da   EH
i-3 EH
CQZiH
   ca
  ca
1
         co
         63
         CQ
         ID
         EH

         63
         OS
         D
         EH
         CJ
CO
CM
O
CM
yv] £4
Oi CO
MO
O4 CJ
1
fa &
o ca
1 EH
a co
525 ^i
ca co
IM*


•
cn
o
CM
VO
CO
CM
iH




O
0
O
•
Tl1
CO
r-
cn
in
CO
rH
                             OS
                             33
                               ca
                               EH
                             Q
                             Oi
                             I
                             fa

                             £
                             ca
                             EH
                             CO
                             tH
                             CO
                                        li
                                        ca
                                        ca

                                        2:
                                        M


































EH
ca
O
CJ
jj!
o
Z
z

o
O
o
•
vo
o
00
vo
m
r-t





















ca
EH
CO
o
CJ

J
EH
M
04

CJ


o
xn
r-
«
vo
^j*
cn
i-H
r^
CO














CO
OS
(Jj
63
>1

m
v^
Z
0
M
EH

M
^
Oi
ca
a


CM
VO
in
•
CM
cn
cn
cn
r-
CM


CO
EH
CO
CO O
EH CJ
CO
O OS
cj ca
s
ca p
O 04
5 Q
zz
ca <
EH
zx
M O

-------
oo
vo
oo
oo
in
o
oo
CM
00
00
            o
            o
            o
CM
O
            vo
o
o
o
 •
CO
vo
t"~
in
00
r-i
                 oo
                             oo
                             CM
                             oo
         CM
         <-4
         00
                                \o
                          O
                          vo
              00
              oo
              00
         VO   CM
         «•»   rH
         CM
                                     in
                                     CN
                                     VO
                                     iH
                                     r-
00
 •
m
"31
oo
CM

3
o
vo
CM
00
CM
            O
            O
            O
00
cn
CM
CM
CM
VO
O
  •
in
CM
tH
r>
oo
                 m
                 r-
00
VO
00
00
         o   o    r*
         o   CM    oo
         o   o    **
                                      00
         VO
         CM
         00
                                CM
in
r^
oo
vo
oo
ON
                      IX-95

-------
            O
            O
            CO
            fO
            in
            O)
            
                                          CM
                       in
                       r~
                       oo
                       vo
                       CO
                       cn
                    IX-96

-------
           o
           o
           o
           CM
           vo
o
m
CO
                       r-
                       oo
CO
                            oo
      in
      CM
      ro
CM
i-H
CO


O


CM
r-


CM
                                           CO
                       in
                       CO
                       cs
           o
           o
                       IT)
                       00
ro
•»*
vo
         O
         CO
                             ro
      o
      CO
      in
                             in
                             CO
                                                    ro
ro
vo
ro
ro
in
CO
PO
ro
                       O
                       o
                       o
                        •
                       00
                       vo

                       fn
                       ro
      r-
      co
      oo
      CM
      ro
         CN
         •H
         CO
          •
         o
         VO
         "if1
         VO
         ^
         CM
                    vo
                    CO
                    ro
                    ro
                    CM
                    r-t
               m
               CM
                             in
               vo
               vo
                       IX-97

-------
o
o
  •
o
in
CO
r^
ro
§
o
o
«*
CN
in
r-
CO
10
m
^*
r-
G\
<*
o
in
r-
tH
^Jt
cn
rH
•*

in

m
r*
00

CTl
CTl

o
o
o
CO
V0
r»

p^

\o
1^
CO
CN

Q^
CO


1
• fY1^
: ^
'. en
; oo

&\
f- H
i ^
B
w
                    IX-98

-------
o
o
 •
o
in
oo
r*
on
o
o
o
o
"*
CN
          oo
10
CN
r-
          in
          r-
          00
          o
          in
r-
oo
                          in
o
CN
CN
VO
in
                       00
in
CN
10
             m
o
in
CM
             VO
             CN
             O
             VO
             CN
                   IX-99

-------
              oo
              vo
              CN
              r-
              in
              in
              vo
                         m
                         r-
                         o
                          •
                         r-
                         co
                         CM
                         in
                         m
                               r-
                               oo
                               in
 rH

 CO
          CN
          vo
          m;
 o
 oo
 vo
 oo
 in
 CN
 vo
  •
 o
 •«*"
 in
 CN
          m
          oo
             o
             o
             o
             **
             in
                        CN
                         9
                        CN
                        in
                        m
 o
 o
 oo
 o
 o ;•
 vo,
                                      CNi
 O
 O
 o
 00
 CN
  «
 CN
 rH
 in
 in
 CN
 o
 o
   •
 o
 in
 oo
 t--
 n
 o
 o
 o
 o
 «*
 CN
             r-
             oo
            VO
            CN
            o
            vo
                       m
                       r-
                       oo
                        rn
                       o
                       in
t>
oo
                              in
o
CN
CN !
vo !
in :
vo
"3<
00
in
CN
vo
 •
o
•^
m
o
in
CN
  •
CN
VO
CN
O
VO
CN
B
j
                                   EL)
§
I
S
                  IX-100

-------
merit cost  figures  are  estimated  (Tables  9-29 and 9-30).
These  figures  represent  the  cost of each treatment level for
the entire electron  tube subcategory.  This calculation  does
not make any allowance for waste treatment that is currently
in-place at electron tube facilities.

Industry-wide Cost and Benefit

Tables 9-31 and 9-32 present the  estimate  of total annual  cost
to the electron tube subcategory  to  reduce pollutant  discharge.
This table  also presents  the benefit of  reduced pollutant  dis-
charge for  the electron  tube subcategory resulting from  the
application of the three  levels  of  recommended  treatment.  Bene- •
fit was calculated by  multiplying the  estimated number of  gallons
by each of  the recommended treatment systems as shown in Table
9-18. ; Values are presented  for  each of  the selected  subcategory
pollutant parameters.

The column  "Raw Waste" shows the  total amount of pollutants  that
would  be discharged  to the environment if  no treatment were  em-
ployed by  any facility in the  industry.   The columns  "Levels 1,
2, and 3"  treatment  show the amount of pollutants that would be
discharged  if any one  of  these three levels of  treatment were
applied to  the total wastewater  estimated  to be 'discharged by
the electron tube subcategory.
      i
The total  amount of  wastewater discharged  from  each level  of treat-
ment is also presented in this table to  indicate the  amount  of  pro-
cess wastewater to be  recycled by each of  the three levels of treat-
ment.  Process wastewater recycle is a major step toward water  con-
servation  and  reduction  in pollutant discharge.
                            IX-101

-------
                              TABLE  9-29       l
                     INDUSTRY-WIDE COST ANALYSIS

                     TELEVISION  PICTURE TUBES
Investment
(Thousands Of Dollars)

Annual Costs
(Thousands Of Dollars)

     Capital Costs
     Depreciation
     Operation &
      Maintenance

     Energy & Power

Total Annual Costs
(Thousands Of Dollars)

Discharge Plow
(million I/year)
LEVEL 1

9732.318
820.590
1946.463
1510.138
117.063

4394.254


2554.875
LEVEL 2

11488.674
968.679
2297.735
1717.916
126.142

5il0.472
2554.875
LEVEL 3

11649.174
982.209
2329.835
1724.336
131.632

5168.012


1021.950
                                IX-102

-------
Annual
                         TABLE 9-30
                INDUSTRY-WIDE COST ANALYSIS

                       APERTURE MASKS
Investment
(Thousands Of Dollars)
Costs
(Thousands Of Dollars)

     Capital Costs
     Depreciation
     Operation &
      Maintenance

     Energy & Power

Total Annual Costs
(Thousands Of Dollars)

Discharge Flow
(million I/year)
                       LEVEL 1

                       1989.748
                       1178.611
LEVEL 2

2406.905
1178.611
                                                            LEVEL 3

                                                            2622.905
167.767
397.951
295.072
15.969
876.759
202.940
481.381
338.566
18.163
1041.050
221.148
524.581
347.206
50.163
1143.098
                                 IX-103

-------
OO
   T5  C (0
      «* r- oo
     , CM o vo CM r~ oo **    oo  . •*
      •«aomr~^f
       • vo  .cM^oocMotnc^vo
      i— ICM'JTinoO'S'VO'CMCMOO
                                                         CM
                                                         i— i
                                                         o
                                                           .
                                                         OO
                                                         vo
                                                         rn
                                                         in
                                                                                    Cu
                                                                                    £
                                                                                    8
                                                                                    a
                                                                                    jj
                 *  * *  *  en
                 *  * *  *   •
                            o
                                       in
                                                          m ro in    CM
                                                          i— i iH o    r-
                                                          VOCTVCM    ^
                                   | o o vo o  «** vo in cn vo rH

                                   '"^.••d^pyo^rH^rH
   •U  iJ
•p c  nj
$§£
  5^
 !£^
 :S£
    CO 03

    SA

    3s CTi
in
r-
oo
 •
'S'
in
in
CM
          tn
          r-
          oo
           in
           in
           CM
                 * * * «
                 * * * *
                           en
     *
     *
                      * cn
                      *  .
                         o
                                      en
                                                        i  n m oo
                                                     mir-Hr-oo
                                     vo i— I   «f-»n  «vorhor~-oo
          oo CM o   cn r*- rH
     oo r** vo *4* in c3 oo oo r^*
rHooocnvoinrHvooooo  .
cncnincn  •  •  .in  .  .00
in oo  •  . oo vo r**  • oo *&• vo


OOOCMCnrHppCMCMCMcntn
                                                               m
                                                            cn CM
                                                            rH CO
                                                            VO  *
f^ 00
vo cn
in in
VO rH
oo CM
                                                                    in
                                                                    CM
                                                                    en
                                                                    co
   j
    a
   PJ
          £


         t
         j
         •H
         •-H

          a
                                                            cn
                                                            TJ
                     ...*a
                rH»5-Sg

                rH*gg^^
                rH «* VO [>~
                rH *» 00 00
                              'si* in oo cn CM oo
                              rH iH rH rH CM CM
                              rH rH rH rH rH i-H
                                                           2
                                                           m

                                                        ^S
                                                        w  o
                                                        O  'U

                                                           T3

                                                        "(0  §

                                                        I  i
                                                       I  I
                                                       I
                                              3
                                              •s
                                              I
                                                                            3
                                                                            S
                                                                                    ICQ
                                                                                   CQl
                                                                                 001
                          IX-104

-------
                *
                m
                   a
                         CT>

                      w*
                                   O O O O
                         00
                         CD
                         O


                         n
                              rH         00 VO   O


                              vo    r> CM rH  •   o
                               •    ON P*   * CO     *
                              00     •  • OO VO   rH
                              t>    m n vo a\   21
                              rH    P* CO CO ^*   "
                              rH     o
            VO ON rH CM
ON
in
r-

vo
r-
co
                      •P  Jul    rH    VO   «N r-
                      w  nj    rH    vo oo ro r*
                      J5j  gj    vo    in o ro  •
                               •     • oo   • r*»
                              00    rH  « O 00
                                   O rH O CM
i*   §
 ^*   rH
                                   •<3» vo on vo

                                            IX-105

-------

-------
                         SECTION X
            SEMICONDUCTOR SUBCATEGORY DISCUSSION
 INTRODUCTION

 This discussion of the semiconductor industry consists of the
 following major sections:

          Products
          Size of the Industry
     ;    Manufacturing Processes
          Materials                .
          Water Usage
     .    Production Normalizing Parameter
          Waste Characterization and Treatment in Place
          Potential Pollutant Parameters
          Applicable Treatment Technologies
          Benefit Analysis

 Data contained in this section were obtained from several
 sources.  Engineering visits were made to twenty plants
 within the subcategory.  Of these twenty plants, wastewater
 samples were collected from twelve of these facilities.  A
 total of fifty-two semiconductor manufacturing plants were con-
 tacted by telephone.  A literature survey was also conducted
 to ascertain differences between types of semiconductor pro-
 ducts, process chemicals used, and typical manufacturing
processes.

 PRODUCTS

 Semiconductors are solid state electrical devices which perform
 a variety of  functions.  These functions include information
processing and display, power handling, and the conversion be-
 tween light energy and electrical energy.  The semiconductors
 range from the simple diode, which may be turned on or off like
a light bulb, to the integrated circuit which may have the equi-
valent of 250,000 active switching components in a 0.635 cm
 (1/4 inch) square.

Semiconductors are used throughout the electronics industry.
The major semiconductor products a^e:

          Silicon based integrated circuits which include
          bipolar, MOS (metal oxide silicon), and analog
          devices.
                                X-l

-------
          Gallium arsenide and gallium phbsphide wafers
          for the production of light emitting diodes  (LED's).
                                          F
          Silicon and germanium for diode and transistor
          production.                     |

          Glass wafer devices such as for liquid crystal
          display (LCD) production.       '
Semiconductors are included within the Sl   (Standard Industrial
Classification) codes 3674 (Semiconductors  and Related Devices)
and 3679  (Electronic Components, Not Elsewhere Classified).
The major product areas of SIC code 3674 are:

          Hybrid Integrated Circuits - thick film, thin film and
          multichip devices.

          Bipolar Integrated Circuits    ;

      .    Metal Oxide Semiconductor Devices

      .    Transistors                    j

          Diodes and Rectifiers          ;

      .    Selenium Rectifiers            ;

      .    Light Sensitive and Light. Emitting Devices (solar
          cells and light emitting diodes)
                                         !
      .    Thyristors                     '
                                         i
The major product areas of SIC code 3679 are:

      .    Magnetic Bubble Memories       j

      .    Liquid Crystal Displays        j

SIZE OF INDUSTRY                         !
                                         i
The size of the semiconductor industry is [presented in the fol-
lowing paragraphs in terms of number of plants , number of pro-
duction employees, and production rate.  Size estimates are
based upon data collected from visited facilities, telephone
surveys, and literature surveys.
                              X-2

-------
Number of Plants -  It  is estimated that approximately 257 plants
are involved in the production of semiconductors.  This estimate
comes from an August 1979 list-ing of plant locations compiled by
the Semiconductor Industry Association.

Number of Production Employees - It is estimated that approximately
62,000 production employees are engaged in the manufacture of
semiconductor products.  This estimate is from the U.S. Depart-
ment of Commerce 1977 Census of Manufactures  (Preliminary Statis-
tics) .

Typical plants surveyed or visited during this study employ be-
tween 30 and 2500 production employees.  The majority of plants
employ between 150 and 500 production employees.  Only nine of
the 51 plants in the data base have more than 500 production
employees.

Production Rate - The total number of semiconductor products for
the year 1978 was obtained from the Semiconductor Industry Asso-
ciation.  During that year, 8.844 billion units were produced
for a total revenue of $3.123 billion.

A typical medium-sized plant employing 350 production employees
produces an estimated 299 million units per year.  This figure
is based upon an average output of 142,380 units per production
employee (total units produced divided by total production em-
ployees ) .

MANUFACTURING PROCESSES

The manufacturing processes for semiconductor production are
described in the following paragraphs.  Each type of semicon-
ductor and associated manufacturing operations is discussed
separately because production processes differ depending on the
basis material.

Silicon-based integrated circuits - (Reference Figure 10-1) -
These circuits require high purity polycrystalline silicon as
a basis material.  Most of the companies involved in silicon-based
integrated circuit production purchase ingots (cylindrical cry-
stals which can be sliced into wafers) or purchase slices or wafers
from outside sources rather than grow their own crystals.

When the ingot is received it is sliced into round wafers approxi-
mately 0.76mm (0.030 inches) thick.  These slices are then lapped
or polished by means of a mechanical grinding machine or are chemi-
cally etched to provide a smooth surface.  Wastewater results
from cooling the diamond tipped saws used for slicing and from
deionlzed (DI) water rinses following chemical etching and mil-
ling operations.
                                  X-3

-------

I
K

0
             -I

             -
             x
             <
             I-'
             Z
             u
              i-
            Q o
            Q u
                o
                                   1
0

2 S

g 2
2 <

n
i I

It
i- a
o J
3$
Id U
I
 O
 z
 K
 0
I

 u


 o
 0.
            J K
            a. o
            i
                         o
                         id

                         H

                         0.
                         in
                       u S

                       < 5
                       f -
                       o z
                       5 "
                                             o
                                             u

                                             u
                                             0

                                             u

                                             



I
U

                        i 6
                       t«s
                       t  M J
                       1  s §
                FIGURE IO-I      |


    SILICON INTEGRATED CIRCUIT PRODUCTION


                    X-4        '

-------
The next step  in  the manufacturing  process  is  the- growth of an
oxide  layer  on the  surface  of  the wafer.  This oxide layer
is the! area  where all  of  the subsequent processing occurs.  The
,epitaxial  layer is  grown  on the  wafer  in  a  furnace where the
wafer  is heated in  a silane gas  atmosphere  at  appr&xtrifately
1000°C for several  hours.                              ''."". ~

The wafer  is then coated  with  a  photoresist, a photosensitive
emulsion that  hardens  and clings to the wafer  when exposed.
to light.  The wafer is next exposed to ultraviolet.light using
glass  photomasks  that  allow the  light  to  strike .only selected
areas.  After  exposure to ultraviolet  light, unexpos'ed resist
is removed from the wafer,  usually  in  a DI  water  rinse.  The wafer
is then visually  inspected  under a  microscope  and etched in a
solution containing hydrofluoric acid  (HP).  The  etchant produces
depressions, called holes or Windows,  where  the diffusion of
dopants later  occurs.  Dopants are  impurities  such as boron,
phosphorus and other specific  metals.  These impurities eventually
form circuits  through  which electrical impulses can be transmitted,
The wafer  is then rinsed  in an acid or solvent solution to remove
the remainder  of  the hardened  photoresist material.

Diffusion  of dopants is an  evaporative process in which the
dopant to  be diffused  is  heated  in  a furnace,  causing the do-
pant to reach  a gaseous state.  The atoms of the  dopant bombard
the wafer  and  enter the silicon  through the windows at controlled
depths to  form the  electrical  pathways within  the wafer.  Then
a second oxide layer is grown  on the wafer, and the process is
repeated.  This photolithographic-etching-diffusion-oxide process
sequence may occur  as  many  as  20 times depending  upon the appli-
cation of  the  semiconductor.

During the photolithographic-etching-diffusion-oxide processes,
the wafer  may  be  cleaned many  times in mild acid  or alkali solu-
tions  followed by DI water  rinses and  solvent  drying with ace-
tone or isopropyl alcohol.  This is necessary  to  maintain wafer
cleanliness.

After  the.diffusion processes  are completed, a layer of metal is
deposited  onto the  surface  of  the wafer to  provide contact points
for final  assembly.  One of the  following three processes are
used to deposit this metal  layer:

           Sputtering - a process whereby  a  thin layer of metal
           is deposited on a solid surface in a vacuum.  In this
           process,  ions bombard  a cathode which emits the metal
           atom.
                                  X-5

-------
           Evaporation - palladium,  titanium,! or aluminum is
           evaporated onto the surface of the! wafer to provide
           a surface for contact connections.!
                                             i

           Electroplating - gold, nickel, copper, chromium,  tin,
           or silver is electroplated onto thle surface of the
           wafer.                             j
                                             i
 Finally,  the wafer receives a protective oxi<3e layer (passivation)
 coating before being back lapped to produce  ja wafer of the
 desired thickness.  Then the individual  chips are diced from
 the  wafer and are  assembled in lead frames fior use.  Many companies
 involved  in semiconductor production do  not  dice finished wafers
 in the  United States.   Rather, the  completed wafer is packed and
 sent to overseas facilities where dicing and' assembly operations
 are  less  costly.   This cost effectiveness is the result of  the
 amount  of hand labor necessary to inspect and assemble finished
 products.

 Gallium arsenide and gallium phosphide waferis - (Reference  Figure
 10-2) These wafers are purchased from crystal growers and upon
 receipt are placed in  a furnace where a  silicon nitride layer
 is grown  on the wafer.  The wafer then receives a thin layer of
 photoresist, is exposed through a photomask,! and is developed
 with a  xylene-based developer.  Following this, the wafer is
 etched  using hydrofluoric acid or a plasma-gaseous-etch process,
 rinsed  in DI water,  and then stripped of resist.  The wafer  is
 again rinsed in DI water before a dopant is  diffused into the
 surface of the wafer.   A metal oxide covering is applied next,
 and  then  a photoresist is applied.   The  wafer is then masked,
 etched  in a solution of aurostrip (a cyanide-containing chemical
 commonly  used in gold  stripping), and rinsed;in DI water. The
 desired thickness  is produced by backlapping!and a layer of  metal,
 usually gold,  is sputtered onto the back of  the wafer to provide
 electrical contacts.  Testing and assembly complete the production
 process.                                     j

 Silicon and germanium  chips - (Reference Figure 10-3) 'These  chips
 are  used  in transistors and diodes.   They are usually small  chips
 of the  pure crystal  placed between  two or three contacts., These
 devices,  called discrete  devices, are manufactured on a large
 scale,  and  their use is mainly in older  or less sophisticated
 equipment  designs,  although discrete devices  still play an im-
portant role  in high power switching and amplification.

The  crystal material is cleaned in  an acid or alkali  solution,
rinsed  in  DI water,  and coated with 'a layer  of photoresist.  The
wafer is  then  exposed  and etched in  a hydrofluoric acid solution.
This is followed by  rinsing in DI water,  drying,  and  doping  in
diffusion  furnaces where  boron,  phosphorus,  or gold are  diffused
into the surface of  the wafer.   The  wafers are then diced into
individual  chips and sent to  the assembly ar4a.   In the  assembly
area the chip  is placed between contacts  and;is  sealed  in rubber,
glass,  plastic, or ceramic  material.   Wires  are  attached and the
device  is  inspected  and prepared for  shipment.
                                 X-6

-------
GALLIUM
  ARSENIDE:
    PHOSPHIDE

  WAFERS
   APPLY


PHOTORESIST
 UV LIGHT

 EXPOSURE
DEVELOP
   METAL  OXIDE

     COVERING
    STRIP

    RESIST
DIFFUSION
               ACID ETCH
      APPLY


    PHOTORESIST
   UV LIGHT

   EXPOSURE
 DEVELOP
                  ETCH
   ASSEMBLY
ELECTRICAL

EVALUATION
                                      SPUTTER
                                                     BACKLAP
                                         DENOTES LIQUID WASTE GENERATION
                           FIGURE 10-2


                        LED PRODUCTION
                               X-7

-------
WAFE RS
(SILICON,
GERMANIUM)

I


*"

t
-*»• ASSEMBLY
T
APPLY UV LIGHT
PHOTORESIST EXPOSURE
!
t
i i
ACID
•4 DIFFUSION «•«- ' •«- DEVELOP •"*
ETCH
1 : t
I
i
                           DENOTES LIQUID WASTE GENERATION
3-jTBS
                               I
            FIGURE 10-3
SILICON, GERMANIUM DIODE PRODUCTION
                 X-8

-------
 Liquid Crystal Display (LCD) Production - (Reference Figure
 10-4)A typical LCD production line begins with optically flat
; glass that is cut into four inch squares.  The squares are then
 cleaned in a solution containing ammonium hydroxide, immersed
 in a mild alkaline stripping solution, and rinsed, in deionized
 water.  The plates are spun dry and sent to the photolithography
 area for further processing.        ,   •-

 In the photolithographic process a liquid mask is applied with a
 roller, and the square is exposed and developed.  This square
 then goes through deionized water, rinses and is dried, inspected,
 etched in an acid solution, and rinsed in deionized water.  A
 solvent drying step is followed by another alkaline stripping
;solutipn.  The square then goes through DI water rinses, is spun
 dry, and inspected.

 The next step of the LCD production process is passivation.  An
 oxide jlayer is deposited on the glass by using liquid silicon
 dioxide, or by using silicon and oxygen gas with phosphene gas
; as -a dopant.  This layer is used to keep harmful sodium ions on
 the glass away from the surface where they could alter the elec-
 tronic characteristics of the device.  Several production steps
 may occur here if it is necessary to rework the piece.  These
 include immersion in an ammonium bifluoride bath to strip sili-
 con oxide from a defective piece followed by deionized water
 rinses and a spin dry step.  The glass is then returned to the
 passivation area for reprocessing.

 After passivation, the glass is screen printed with devitrified
 liquid glass in a matrix.  Subsequent baking causes the devi-
 trified glass to become vitrified,  and the squares are cut into
 the patterns outlined by the vitrified glass boundaries.  The
 saws used to cut the glass employ contact cooling water which
 is filtered and discharged to the waste treatment system.

 The glass is then cleaned in an alkaline solution and rinsed
 in deionized water.   Following inspection, a layer of silicon
 oxide is evaporated onto the surface to provide alignment for
 the liquid crystal.^  The two mirror-image pieces of glass are
 aligned and heated in a furnace bonding the vitrified glass
 and creating a space between the two pieces of glass.  The glass
 is placed in a vacuum chamber, air  is evacuated, and the liquid
 crystal (a biphenyl compound)  is injected into the space between
 the glass pieces.  The glass is then sealed with epoxy, vapor
 degreased in a solvent, shaped on a diamond wheel, inspected,
 and sent to assembly.

 MATERIALS

 The materials required to manufacture semiconductors may be
 classed as raw materials and process chemicals.  Raw materials
 include basis, dopant, and layer materials.   Process chemicals
 are used for unit operations such as etching,  rinsing
 and photolithography.
                                 X-9

-------





•»•


•te-












APPLY

i
KLKALINE

j
u
z
I

j
(K
§
^
O
*
riCALLY
S !


u
HOTORKSIS*
1.
I
STRIP


CLKAN


w
SQUARE
X
§


if i
j






—


-^



—







\ '
V LIGHT
KPOSURK
=» U
t
DEVELOP

t
NSPKCT

t

1
u

t

STRIP
RKSIST














—



—



1
SOLVENT
CLEAN

1
PRINT
MATRIX

t
ASS1VATS
f.
t

O
Z

t

SOLVENT
CLEAN
T









-*











+
BAKE
t
U
N
ffi
P
1-
o.
t
M
ALKALINI
CLEAN
t

u
Id
m
z
t
Id
u 9
5 g
E VAPOR
SILICON
1









—











li
VAPOR
ISGRSASE -

t
J |
Id
n i
Q.
u
t1
LIQUID
rSTAL
•ERIAL
•s &'<
2 ° 2

T
U M
I W
T!

ALIGN
GLASS -
A
i


—•

















t
SHAPING

t
TEST

t
o
s
111
U)










                                          O

                                          F

                                          K
                                          U

                                          U
                                          19
                                           5
                                           2
                                           o
                                           j
                                           n
                                           u
                                           |
   FIGURE 10-4


LCD PRODUCTION


       X-10

-------
                                                     .     .
 Basis  Materials  -  Several  different basis materials are used
 depending  upon the product to be manufactured.

           Silicon  - in  its purest form,  silicon acts as an
           excellent insulating material,  holds  up under ele-
           vated  temperatures, and its  thin oxide layers are
           used in  photolithographic etching steps.   Approxi-
           mately 90-96% of the semiconductor industry utilizes
           silicon  as  a  basis  material.

           Germanium - used primarily in  the production of
           discrete devices such as diodes.  First manufactured"
           in  the early  1950's, it is still manufactured to  -
           supply and  maintain existing equipment but has
           been replaced by silicon in  recent applications.

           Gallium  Arsenide and Gallium Phosphide -  used in
           the production of (LED's)  light emitting  diodes.
           At one time,  the LED was in  great demand  but
           production  has fallen off drastically in  the last
           4-5 years because of the LCD.   However, production of
           LED's  is increasing again for  applications where
           high speed  transmission is necessary.               :

           Glass  -  used  for LCD (liquid crystal  display) pro-
           duction.  This product type  has increased in pro-
           duction  due to its  desirability over  LED's.   The
           LCD requires  less energy than  LED's and requires
           little or no  maintenance.

Dopants -  A dopant is an impurity added  to the  structure of the
semiconductor to produce the  electronic  pathways.  The following
dopants are diffused  into  the wafer in their gaseous or solid
form.

     .     Arsenic  in  the form of arsene  gas

           Phosphorus  in  the form of phosphene gas

           Boron, gold,  and  antimony in their solid  forms

Layer Materials  -  These  are used to form  working layers on the
wafer and  to create the  electrical pathways or  circuitry within
the layer.  Included  are:

           Silicon  oxides and  silicon nitride -  used to grow
           layers on the  wafers.   These materials are used prior
           to each  photolithographic  process to  provide
           electrical  layers,  and also as  a passivation
           or protective  oxide  layer  on the finished wafer.
                                X-ll

-------
      .    Metals - are sputtered or evaporated onto the surface
          of the wafer to provide electrical contacts.  These
          metals include aluminum, gold, chromium, tin, palla-
          dium, nickel, titanium, copper, and platinum.  Also,
          combinations of these metals such as titanium and
          copper may be used.  Some metals may be electroplated
          onto the wafer's metal surface to^provide the external
          contacts.  These metals include gold, tin, copper,
          silver, and chromium.            i

Process Chemicals - The process chemicals are grouped below by
process step in which they are used.       !
                                           i
      .    Flammable solvents such as acetone, isopropyl .alcohol,
          methanol, and propanol are used mainly to dry the
          wafer after DI water rinses.     •

          Chlorinated solvents such as 1,1,1-trichloroethane,
          trichloroethylene, and tetrachloroethylene are used
          as solvent degreasers or as cleaning agents to pre-
          pare the wafer for further processing.

          Photoresists are photosensitive emulsions used in the
          photolithographic process.  They are either positive
          or negative in their action on the wafer.  The positive
          photoresist forms a positive image of the mask and
          after being exposed to ultraviolet light, may be re-
          moved with a water based alkaline material, such as
          potassium hydroxide, or with a solvent.  The excess
          resist may be removed from the wafer after etching
          by using a strong solvent stripper.  The negative
          photoresist is developed in a xylene-based solution
          after exposure to ultraviolet light.  The negative
          photoresist is removed from the w^fer after etching
          the oxide layer with a solution of sulfuric and
          nitric acid, or in a gaseous plasma step called
          ashering.  When the negative resist is used over
          metals,  however, a xylene-based resist stripper is
          used.                            |
                                           I
          Acids such as sulfuric (H2SO.), nitric (HNO,), hydro-
          fluoric  (HP, NH. HP), hydfocnloric (HC1), afid combina-
          tions of  these such as aqua-regia (nitric and hydro-
          chloric  acids)  and sulfuric peroxide (H2SO4 and f^O,,)
          are used  as cleaners in dilute forms ana as etchants
          in more  concentrated forms.  Hydrofluoric acid is the
          most frequently used acid.   It is used to etch the
          silicon  and silicon oxide layers from the wafers.
          This  is  the major contributor of fluoride in waste-
          waters generated by semiconductor production.
                                   X-12

-------
           Other  process  chemicals  used include mild alkaline
           detergents  for wafer and equipment  cleaning,  vinyl
           coverings used to protect the surface of the  wafer
           during processing, wax and ceramic  mountings  used to
       |    hold the wafers during some processing steps, an
       !    acetic acid solution used to remove the wax mounts,
       ;    epbxy  used  in  the assembly processes to attach the
           semiconductor  to the lead frame,  and several  gases
           such as argon  and nitrogen which  are used to  pro-
           vide inert  atmospheres in the growing and diffusing
           furnaces.

WATER  USAGE

Contact water is used throughout the production of semiconductors.
Plant  incoming water  is  first pretreated by deionization to pro-
vide ultrapure water  for processing steps.  This ultrapure water
or deionized  (DI) water  is used  to formulate  acids;  to  rinse
wafers after processing  steps;  to  provide a medium for  collecting
exhaust gases from diffusion furnaces,  solvents, and acid baths;
and to clean equipment and materials used in  semiconductor produc-
tion.  Water also cools  and lubricates  the  diamond saws and grind-
ing machines used to  slice, lap, and dice wafers during processing,

From information gathered  during plant  visits  and phone contacts,
process water usage for  the entire  semiconductor industry is esti-
mated  to be 628  million  liters  (166 million gallons)  per day.
(257 plants x average flow rate  from Table  10-2.)   All  of
the thirteen larger plants  visited  or surveyed  use between
0.67. million and  11.12 million liters (0.18 million  gallons and
2.94 million gallons) of process water  per  day.   (Reference
Table 10-2.)  For these  visited  plants,  process  water recycle
and reuse  ranged  from no water recycle  or reuse  to 80 percent
process water recycle and  reuse.   Most  of the  plants  involved
in semiconductor  production do not  recycle  or  reuse  any process
water and  the plants  that  do  recycle  or  reuse  process water
are generally only the larger plants.

Based upon observations  from visited  facilities,  it  is  estimated
that 100% of all process water used  (approximately 628  million
liters) is treated prior to discharge.   Treatment  techniques
very considerably throughout the industry and  consist mainly of
pH adjustment only.  Treatment techniques presently  in  place at
semiconductor facilities are listed  in Table 10-1.
                                 X-13

-------
                               TABLE 10-1         i

                       WASTKWATER TREATMENT TECHNIQUES
             IN PLACE IN SEMICONDUCTOR MANUFACTURING FACILITIES
         OPERATION
Slicing, Dicing, Lapping
Diffusion
Acid Etch, Acid Clean, DI
Regeneration (Concentrated
Acids and DI W&ter Rinses)

Photoresist Application,
Solvent Cleaning,
Photoresist Strippers,
Developers
Hydrofluoric Acid Etching
Buffered HF (NH4HF)
Etching
TREATMENT SYSTEMS OBSERVED

Discharg<2 through clarifier;
sludge dewatered and contrac-
tor removed

Wet air scrubbers to collect
gases, volatile organics, acid
fumes.  Discharge to on-site
treatment facility.

Discharge to pH adjustment tank
(pH adjust with sodium hydroxide
or lime)!
        I
Collected in barrels or tank
for contractor removal and
disposal;
Collected and sold for reclaim
(some solvents)
        I
Treat with lime (Ca(OH)?) and
discharge to sludge dewatering
for solids removal

Fluoride, treatment and ammonia
treatment by mixing with cyanides
from electroplating then to
clarifier for solids removal
                                      X-14

-------
PRODUCTION NORMALIZING PARAMETERS

Production normalizing parameters  are  used  to  relate  the  pollu-
tant mass discharge  to the production  level of a  plant.   Regu-
lations expressed  in terms of  this production  normalizing parameter
are multiplied by  the value of this parameter  at  each plant  to
determine the allowable pollutant  mass  that can be  discharged.
However,, the following problems  arise  in defining meaningful
production normalizing parameters  for  semiconductors:

          Size, complexity and other product attributes affect
          the amount of pollution  generated during  manufacture
          of a unit.

     .    Differences in manufacturing  processes  for  the  same
        ;  product  result in differing  amounts  of  pollution.

          Lack of  applicable production records may impede
          determination of production  rates in terms  of de-
          sired normalizing parameters.

Several broad strategies have  been developed to analyze ap-
plicable production normalizing parameters.  They are  as
follows:

          The process approach - In this approach,  the pro-
          duction  normalizing  parameter is  a direct measure of
          the production rate  for each wastewater producing
          manufacturing operation.  These parameters  may  be
          expressed as sq m processed per hour, kg  of  pro-
          duct processed per hour, etc.  This  approach requires
          knowledge of all the wet processes used by  a plant
          because  the allowable pollutant discharge rates  for
          each process are added to determine  the allowable
          pollutant discharge  rate for the  plant.   Regulations
          based on the production normalizing  parameter are
          multiplied by the value of the parameter  for each
        I  process  to determine allowable discharge  rates  from
        ;  each wastewater producing process.

          Concentration limit/flow guidance -  This  strategy
          limits effluent' concentration.  It can  be applied
          to an entire plant or to individual  processes.  To
          avoid compliance by dilution, concentration  limits
;        ;  are accompanied by effluent flow guidelines.
        .:,.. The flow guidelines, in turn, are expressed  in
        •',  terms of the production normalizing parameter to
        ;  relate flow discharge to the production rate at
          the plant.
                                    X-15

-------
 The  selected  production  normalizing  parameter  for  the  semi-
 conductor industry is  the  total  volume  of  ultrapure  water  pro-
 duced  by a facility.   As the  production rate varies, the use
 of ultrapure  water will  also  vary.   Consequently,  the  production
 of ultrapure  water can be  directly related to  the  plant pro-
 duction  rate.   The amount  of  ultrapure  water produced  is also a
 more readily  available figure than the  number  or mass  of product
 exposed  to water  producing operations.   Using  the  production
 normalizing parameter, a regulation  can be determined  expressed
 in concentration  (mg/1)  of a  specific pollutant and  million
 liters of ultrapure water  produced per  day at  a given  facility.

 WASTE  CHARACTERIZATION AND TREATMENT IN PLACE

 This section  presents  both the sources  of  waste in the semi-
 conductor subcategory  and  process' wastewaterj sample  data.
 The  in place  waste treatment  systems are also  discussed,
 and  effluent  sample data from these  systems for the  twelve
 semiconductor plants sampled  are  presented, i

 Process  Descriptions and Water Use          ;

 The  "front end" operations, those processes iwhich  produce  the cir-
 cuitry within the  wafer, may  be  classified by  the  six  wet  processes
 used in  the manufacture  of semiconductors, namely:
                                            i

 .    Wafer cleaning and  subsequent water rinsing

 .    Photoresist developing and  subsequent water rinsing

     Silicon oxide etching and metal etching and subsequent
     water rinsing
                                            i
     Epitaxial diffusion furnace  and fume  hood wet air scrub-
     bing                                   ',

 .    Photoresist stripping and subsequent  waiter rinsing

 .    Wafer lapping and dicing              I

 These wet  processes are  used  in varying degrees by individual
 plants depending primarily upon the  product being  manufactured.
 The discrete semiconductor (such  as  a diode)i requires  only one
 layer of diffused  material, whereas  the integrated circuit re-
 quires an  average  of 12 diffused  layers.   Therefore, process
 water use  varies among plants relative  to  th'e  product,  tn*e pro-
 duction rate, and  other  factors.  Process  water use  a!|gSO"varies
 depending  upon the  flow rate  from the deionized (DI) water rin-
 ses used.  These rinses have  a flow  range  of' 0.87  to 17.4  liters/
minute with an average continuous flow  rate !of 7 liters/minute
 at the sampled plants.  Table 10-2 delineates  available wet pro-
 cess data.  Also included  are  size information, product type,
 and plant  effluent  flow rates.              j
                                  X-16

-------
                                      TABLE 10-2

              SEMICONDUCTOR AVAILABLE RAW WASTE DATA & EFFLUENT FLOW RATE
 Plant ID No.
Size
Product"
02040
02347
04152
04213
04249 ;
04290
04291
04292
04294
04296
06143
19100
19101
30167
35035 ',
36133
36135
36136
41061
42044
Large
Medium
Medium
Medium
Medium
Large
Small
Small
Small
Medium
Medium
Small
Medium
Large
Medium
Medium
Large
Medium
Large
Medium
Silc
Silc
Silc
LED
Silc
Silc, LED
LED
YIG, LED
Silc
Silc
Silc
Silc, Ger Diodes
Silc
Silc
Silc, LCD
Silc
Silc, LED
Silc
Silc
Silc, LCD
                                                Raw Waste Data

                                                      S
                                                      S
                                                      NA
                                                      NA
                                                      NA
                                                      NA
                                                      NA
                                                      NA
                                                      S
                                                      S
                                                      S
                                                      NA
                                                      NA
                                                      S
                                                      S
                                                      S
                                                      S
                                                      S
                                                      S
                                                      S

                                               Averaqe Flow Rate -
Effluent Flow I/day

   11,124,000
    3,136,512
      151,400
    1,090,080
           NA
    2,509,200
        4,704
      130,680
      150,552
    1,254,600
    1,080,000
      190,800
      669,120
    4,530,528
      169,584
    6,720,000
    3,120,000
    1,392,000
   10,560,000
      894,960

    2,443,936
Note 1:
  NA - not available
   S - sampled

Note 2:
  Silc - Silicon Integrated Circuit

  LED - Light Emitting Diode

  YIG - Yttrium Iron Garnet crystals

  Gar Dio3es - Germanium Diodes

  LCD - Liquid Crystal Display
                                           X-17

-------
Wafer Cleaning - This process  is  associated  with  all  types  of
semiconductor manufacture.   The semiconductor  material  is  fre-
quently cleaned in mild  acid or alkaline  solutions  to minimize
the  introduction of  contaminants  into  the wafer or  into the che-
mical baths.  Typical cleaning solutions  include  mildly alkaline
detergent  solutions  and  dilute nitric,  sulfuric,  and  hydro-
fluoric acids.  A typical discharge  from  the cleaning operation
at the visited plants includes a  four  to  seven liter  batch  dis-
charge of  concentrate and approximately seven  liters  per minute
of deionized  (DI) rinsewater.  This  cleaning process  may be
utilized either prior to every process  step  or infrequently,
depending  upon the requirement of the  operation and the elapsed
time between process steps.

Photoresist Developing - This  process  folloWs  the application of
photosensitive emulsion  on  the wafer and  exposure of  the photo-
resist material through  a glass mask.   The yrafer  is then immersed
in a developing solution which removes  unex^osed  resist from the
wafer.  The exposed  resist  is  quite  hard  and insoluble  in  the
developing solution.  The positive type phojtoresist uses a  water-
based developer, whereas the negative  type photoresist  requires
a xylene-based developer.   After  the xylener-based developer is
spent, it  is collected and  contractor  removed.  The water-based
developer  is discharged  to  the waste treatment system along
with the subsequent  DI water rinse.  Typically, the DI  water
rinse discharged at  approximately seven liters per  minute  at
the visited plants.                        i

Silicon Oxide and Metal  Etching - After the!  wafer is  masked with
photoresist, it is etched in an acid solution  either  to create
windows for diffusion (silicon oxide etching)  or  to create  ex-
ternal contacts for  electrical connections !(metal etching).
Hydrofluoric acid is used throughout the  semiconductor  industry  as
a silicon oxide etchant  and  is discharged tb the  on-site waste
treatment  system when spent.   The metal etchants  include a  gold
stripper; phosphoric acid to dissolve  alumihum; a solution  of
nitric and hydrochloric  acids  to  dissolve platinum; and several
other less frequently used  acids.  All  of the  spent etchants  are
discharged to the waste  treatment system  as>  are the associated
DI water rinses.                           |

Epitaxial Diffusion  Furnace  and Fume Hood Wgt  Air Scrubbers -
After the windows have been  etched into thej  wafer,  the  wafer is
placed in a furnace  where dopants are  deposited into  the windows.
The furnaces are vented  to  wet air scrubberp to remove  pollutants
from the air prior to discharge.   These scrjubbers are used  in all
of the twenty plants which  were visited during this study.   The
water from the wet air scrubbers  recirculates  but has an average
bleed-off rate of 35 liters  per minute  discharging  to the waste
treatment  facility.  This bleed-off  is  necessary  because the
water in the scrubber becomes  very acidic and  laden with .pollu-
tants,                                     i
                                 X-18

-------
Eighteen of the visited plants vented their fume hoods to  the
wet air scrubber system also.  In the other two plants, fumes
from acids and solvents were discharged with large amounts of
air to the atmosphere.  These two plants conduct regular analysis
to meet clean air requirements.

Photoresist Stripping - After the dopant has been added to the
wafer, the protective photoresist material must be removed.  The
hardened photoresist is stripped from the wafer with a phenolic
and xylene-based stripper on metal surfaces.  An acid or alkaline
strippier is used on an oxide layer.  The spent phenolic and xylene
stripper is collected and stored for contractor removal, while
the spent acidic or alkaline stripper (potassium hydroxide, sul-
furic-peroxide, sulfuric-nitric acid) is discharged to the waste
treatment system with the accompanying DI water rinses.  The
DI water rinse flow averaged seven liters per minute in these
processes at the visited plants.

Wafer Lapping and Dicing - After the wafer has completed the photo-
lithographic cycle, it must be machined to the proper thickness,
and the individual chips or dice must be removed.  The water used
for cooling and lubrication in the process of grinding or  lapping
the wafer produces wastewater.  This water forms a slurry with the
ground material (kerf) and is discharged to the treatment  facili-
ty'   \

The wafer is diced in a computer-controlled saw.  After cutting,
the dice are removed and prepared for assembly.  In some facili-
ties the dice are separated from the wafer by selectively etching
the perimeter of each die.  This process involves the application
of a photoresist, exposure through a mask, developing, etching,
and resist stripping.  Dicing a wafer by using the photolithogra-
phic process is not an industry-wide procedure but will become
more frequently used in the future because it will allow more de-
tailed etching than the cutting process.

Many of the semiconductor facilities contacted do not lap or dice
wafers in the United States.  The wafers are shipped to assembly
plants outside the U.S. where the wafers are lapped, diced, and
assembled.  Thus, sample analysis data are not available for finish
lapping and dicing operations at any of the facilities visited
during this study.

Wastewater Analysis Data

Table 10-3 is a list of the 129 toxic pollutants and 23 other
pollutants for which sample analyses in the semiconductor
subcategory were conducted.  Of the 129 toxic pollutants 31
were found in measurable quantities or were found at trace
levels.  All other toxic pollutants were not detected in the
sampled streams.
                                  X-19

-------
                                              TftBLE 10-3
                                   POLLUTANT PARAMETERS ANALYZED
TOXIC POLLUEftNT
 1.
 2.
 3.
 4.
 5.
 6.
 7.
 8.
 9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
21.
22.
23.
24.
25.
26.
27.
28.
29.
30.
31.
32.
33.
34.
35.
36.
37.
38.
39.
40.
41.
42.
43.
44.
45.
     Acenaphthene
     Acrolein
     Acrylonitrile
     Benzene
     Benzidine
     Carbon Tetrachloride(Tetrachlorcmethane)
     Chlorobenzene
     1,2,4-Trichlorobenzene
     Hexachlorbenzene
     1,2-Dichlorethane
     Hexachlocoethane
     1,1-Dichloroethane
     1,1,2-Trichlroethane
     Iflf2f2-Tetrachloroethane
     Chloroethane
     Bis(Chloronethyl)Ether
     Bis(2-Chlow>2thyl)Ether
     2-CW.oroethyl Vinyl Ether(Mixed)
     2-Chloronaphthalene
     2,4,6-Trichlorophenol
     Parachloroneta Cresol
     Chlorofonn(Trichloraiethane)
     2-Chlorophenol
     1,2-Dichlorobenzene
     1,3-Dichlorobenzene
     1,4-Dichlorobenzene
     3,3'HDichlorobenzidine
     1,1-Dichldroethylene
     1,2-Trans-Dichloroethylene
     2.4-Dichlorcphenol
     1,2-Dichlorcprcpane
     lf2-DichlorcECCpylene(l,3-DichloroEiropene)
     2,4-Diroeti^lphenol
     2,4~Dinitrotoluene
     2,6-Dinitrotoluene
     1,2-Diphenylhydrazine
     Ethylbenzene
     Pluoranthene
     4-CM.ocophenylPhynyl Ether
     4-^roraophenylPhenyl Ether
     Bis (2-CWLoroisopropyl) Ether
     Bis(2-Chlciroethoxy)Methane
     Methylene Chloride(Dichloranethane)
     ^5ethyl Chloride (Chlcaxraethane)
46.  Methylbromide (Bromonethane)
47.  Bromoform (Tribromanethane)
48.  Dichlorobromomethane
49.  Trichlorofluoromethane
50.  Dichlorodifluoromethane
51.  Chlorodibromonethane
52.  Hexachlorobutadiene
53.  Hexachlorocyclopentadiene
54.  Isophorone
55.  Naphthalene  ;
56.  Nitrobenzene j
57.  2-Nitrophenol
58.  4-Nitrophenol
59.  2,4-Dinitrophenol
60.  4,6-Dinitro-o-cresol
61.  N-Nitrosodimethylamine
62.  N-Nitrosodiptienylamine
63.  N-^Iitrosodi-N-Propylamine
64.  Pentachlorophenol
65.  Phenol       I
66.  Bis(2-Ethylhexyl)Phthalate
67.  Butyl Benzyl Phthalate
68.  Di-NHButyl Phthalate
69.  Di-N-Octyl Phthalate
70.  Diethyl Phthalate
71.  Dimethyl Phthalate
72.  1,2-Benzanthracene(Benzo(A) Anthracene)
73.  Benzo(A)Pyrerje (3,4-Benzo-Pyrene)
74.  3,4-^enzofluoranthene(Benzo  (B)Fluoranthene)
75.  ll,12-Benzofiuoranthene(Benzo(K)Fluoranthene)
76.  Chrysene     '
77.  Acenaphthylene
78.  Anthracene   !
79.  l,12H3enzoperylene(Benzo(GHI)-Perylene)
80.  Fluorene     ]
81.  Phenanthrene:
82.  l,2,5,6-Dibenzathracene(Dibenzo(A,H)Anthracene)
83.  Indeno(1,2,3-^DC)Pyrene(2,3-o-PhenylenePyrene)
84.  Pyrene       !
85.  Tetrachloroethylene
86.  Toluene      l
87.  Trichloroethylene
88.  Vinyl Chloride (Chloroethylene)
89.-  Aldrin       |
90.  Dieldrin     ;
                                                 X-20

-------
                                            TABLE 10-3  Con't
 91.  Chlordane(TechnicalMixtureandMetabDlites) 112.
 92.  4,4'-DDT                                  113.
 93.  4,4'-DDB(P,P'-DDX)                        114.
 94.  4,4I-DDD(P,PI-TDE)                        115.
 95.  Alpha-Endosulfan                          117.
 96.  Beta-Endosulfan                           118.
 97.  Endosulfan Sulfate                        119.
 98.  Endrin  ,                                  120.
 99.  Endrin Aldehyde                           121.
100.  Heptachlor                                122.
101.  HeiptachlorEpoxide(BHC-Hexachlorocyclo-    123.
        hexane)
102.  Alpha-«HC                                 124.
103.  Beita-BHC                                  125.
104.  Gamna-BHC(LIndane)                        126.
105.  Deilta-BHC(PCB-Polychlorinated Biphenyls)  127.
106.  PCB-1242(Arochlor 1242)                   128.
107.  PCB-1254(Arochlor 1254)                   129.
108.  PCB-1221(Arochlor 1221)
109.  PCB-1332(Arochlor 1232)
110.  PCB-1248(Arochlor 1248)
111.  KB-1260(Arochlor 1260)
PCB-1016(Arochlor 1016)
Toxaphene
Antimony
Arsenic
Beryllium
Cadmium
Chronium
Copper
Cyanide
Lead
Mercury

Nickel
Selenium
Silver
Thallium
Zinc
2,3,7,8-^etrachlorcdibenzo-P-Dioxin(TCI»)
POSER KILLUEANTS

Calcium          Platinum
Magnesium        Palladium
Aluminum         Gold
Manganesse        Tellurium
Vanadium
Boron
Barium
Molybdenum
Tin
Yttrium
Cobalt
Iron
Titanium

Oil & Grease
Total Oiganic Carbon
BiochemJLcal Oxygen Demand
Total Suspended solids
Phenols
Fluoride
Xylenes
Alkyl E{X>xides
                                                  X-21

-------
 Detailed laboratory analysis data for the twelve sampled plants
 are presented by plant ID number in Tables 10-r4 through 10-15.
 The tables are in plant ID numerical order.   •

 The following conventions were used in quantifying the levels de-
 termined by analysis:

      Trace Levels - Pollutants detected at levels too low to
      be quantitatively measured are reported as the value
      preceded by a "less than" (<)  sign.  All other pollutants
      are reported as the measured value.      i
                                               1
                                               |
      Mass_Load - Total daily discharge in kilo;grams/day of a
      particular pollutant is termed the mass ioad.  This figure
      is computed by multiplying the measured concentration (mg/1)
      by the water discharge rate expressed in jliters per day.

      Sample Blanks - Blank samples  of organic-;free distilled
      water  were placed adjacent to  sampling po;ints to detect
      airborne contamination of water samples. ! These sample
      blank  data are not subtracted  from the analysis results,
      but, rather, are shown as a (B) next to the pollutant
      found  in both the sample and the blank.   |rhe tables show
      data for total toxic  organics,  toxic and non-toxic metals,
      and other pollutants.                     I

      Blank  Entries - Some  entries were left bljank for one  of
      the following reasons:   the parameter was, not detected;
      kg/day is not given when the concentration is lower than
      the minimum  detectable  limit or not quantifiable; kg/day
      is not given and  not'  included  in totals  for parameters
      typically found in incoming water (calcium, magnesium,
      and sodium);  kg/day is  not applicable to pH.

Analyses of the sampled semiconductor raw waste streams  show
high  concentrations  of some  metals such  as chrbmium,  copper,  and
nickel.   In addition,  in one  stream  the  arsenic concentration
was measured at 6.25 mg/1, whereas in  the  other eight streams
arsenic  was  found  at very low or  trace levels.   The  source  of arsenic
in this  case is arsene  gas used as a dopant  in!diffusion fur-
naces.  ^In  semiconductor facilities  where  arsenic  is  used  in
the basis material,  gallium  arsenide,  the  arsenic  concentration
may be  as high as  100 mg/1.   In three other streams  non-toxic
metals  such as calcium, magnesium, and sodium make up most  of
the discharge.  These pollutants  are contained;in  the incoming
water.   The highest discharge concentrations  of  organics are  for
chloroform, phthalates, and phenolic compounds.  Organics are
present  in solvents and other organic process chemicals.  High
levels of fluoride are present  in one wet  air scrubber stream
and in five of the eight raw waste streams sampled.   The fluoride
results  from the use of hydrofluoric acid  for etching.
                                 X-22

-------
  *8
    a w •* l M-4 VO ^S* ^1*
    o Q •«)• CN n
               co
       o «-i m i-< vo
       -< o o o o
a o
v v
t-t O O O O
  v   v
o o

  V
                             o

                             o
in
en <-4
o o
                                     o at
                                 <-t .-1 r» IH
                                 O O CN O
                                                 i—
                                                 in
                                                 o
o o
  v
       0 O 0 0

       V V
o o o

V V V
           o o
             v
                                                                                                   ir>   T-4 CN T-4 <*> in r-i -a1 rn
                                                                                                   0.-400T.-4CSO VOO
                oooooo

                v   v         v
                                 o

                                 d
                                     vo
                                     o
                                     o
                             in

                           ii
                                               a

                                               o
                                                                     §
                                                                     m CN o
                                                                       §o o
                                                                       o o

                                                                     odd
    ?3 S J5 ^ 5
    O   CN CN n
o

o

v
                                      CN
                                      <-l

                                      a
o

v
a

v
                           to
                           ^" I-*
                           o o
                            •  •
                           o o
              o
            r-4 «-l
            O O

            d o

            V
o
v
.0 O


 C3 O

 V V
                                                                              ooooomcnoo
                                                                              aoooooooo
                                                                                                      in
                                                                                                      a
                                                                                                      o
                                                                                                      o
                                                                                                      a
                                                                                           CN   to

                                                                                           o   o
                                                                                           o   o
I
                                    Not Analyzed For Priority Organics
    i m
                                                                              If! T T-4
                                                                              oc^otn
                                                                              oooo
                                                                                                               otnooo
                                                                                                               ocNoeno
                                                                                                    ddd«5
                                                                                                       o

                                                                                                       d
                                                                                                             o a
                                                                                                             o o
                                     Not Analyze! For Priority Organics
                                                                                                       SvOT-fT-4encNT-,   
-------
J°!3
                                                                        p-
                                                                 *3*   \O VO
                                                                 O   tH O
                                                  en O P-   tH
                                                                                    en o tH      p«
                                                                                                                     01 ^o      »-i   r* tn 

12BS
                               a o o
                               V V
                                      moint-iofMO
                                      <-iocsr>oo<-i
                                                                            in
                                                                            o
                                                                                         _ _
                                                                               oooooo
                                                              o o rn o o o o p

                                                              V V ^ V        V
                                                                                               8
                                                                                               o o
2
                                    us
                                    in   ^"
                                    o   •-<
                                         §o
                                         o
                                                                        o
                                                                         •
                                                                        o
                                                                          CM    I

                                                                       S8S
                                 §;
                                                                                   in   r-
                                                                                   in   in
                                                                                   o   o
                                                                                                              o
                                                                                                              M
                               in in      vo
                                 §CM o    r-
                                 o co    o
                                    in   p-
                                    s   §
tH in VO CM 00
en o vo en TT
vo a o in o
•H vo rr
o o a
do d
CM VO
o-«r
o a
1
o
CO O P»
p- o in
en o o
CM P-
tH a
o o
o o
d d
§in P* CM tH r
o in o o c.
O O tH O tH C,
v v ^
tH
tH
CM
§
d
tH
i vo O en
3 tH O p-
3 o o en
X ^
o CP\
°'| d
§
CO
tH
CO
en
en
en
tH
                                                                                                                     CM O VO O


                                                                                                                     O tH C5 O
£<
                mm      p-       tHvor-CMCMcnin           votHOtH
                OCM^1   in       QCMVOVOOCMtHTOOCOinCMCMtHOenO
                o o o   o       oocMcnooocn o o oomoootHO

                o o o   o       o o o vo o d o* a> d d d d d d d o' d d
                v v               v      en   v   tH       .   .-
                                                                              o
                                                                              ^-
                                                                                           v   o   o
                                                                                           r   IH   tH
                                                                                                             S
                                                                                                             o
                                                                                                                VO


                                                                                                         CM co in d
                                        S
                                        s
                                        o
                                                                                                           S i-<      a)

                                                                                                         a IS      3
                                                                                                         3 U -<-4 
-------
                            Not Analyzed For These Parameters
                                                                                     oooooooo

                                                                                     OOOOOOOOOO

                                                                                         V V     V V V V
                                             §
                                             o
                          O3
                          O
                          o

                          o
                     m

                     o

                     o
          CM O
          i-l O
          o o
                     i-4 i-l CN
                     O O O

                     O O O

                     v-
o

V
                in
                ro
                o

                o
o o   o   o

o o   o   o
  v   v   v




  I

  vo 

 §^•3,^4
 3 n jy i T
 J5 -H 3 -rj -H --J
 o« CQ ra Q Q a
                                                                                     a o

                                                                                     o o
OOOOOTOOOO
oooooooooo

oooooooooo
    v v v     v v v
                                                                             •a
                                                                              IB
                                                                              rt   O
O. CQ b.
                                                  X-25

-------
  .
i 010
1 ££ 04
So
        o   r-
        co   tr
        in ^* tn
        «N c5 o
      
-------
\s
   C CO
!•» O CO «S>
•9 3 VO t*
t~l r-t  -
IN 4-1 O
O >H O
   W-l
                                           in
                                           o
                                                                                                 <*)
                                                                                                 in
                                                                                                 o
                                                                                                                            in    O
                                                                                                                            m r» i-t o
                                                                                                                            o 
-------
f
                             in in en
                             o 04 co
                             o o o
                              •  •   •
                             O O O
                             V V
                                                 <1
                                                 vo in oo
                                                 o o m
                                                   in
                                                 CM rH VO -4 (
                                                 o o
                                                                                         S  15
                                                                                         o  ; o
                                                             I   VO  in   
-------
 I
  giS g P 5.
  •*SSS S
    3
  t»a
   §  R S
   o  8  O
O £ e>i ^p •
O J3 ^** ^ o
H O 0 « v
W '
M !?
M fQ
« T
cn 
-------
g 5
**1 *l
*•* is
8 »-4 ^
•3 ••**. Qi
S P ~T
9 g "9» M
G 9\ £
C oJ en
§ 5J w
O o
13
o >\
M *v
*u •"•
i^a
So


m
vo
n



m
•V


§n •-< «H r-4 O\
0 0 0 0 O
O O O O O O
V V V






rj rt
3§
o o
V






in « en in M
o o o CN n r~
o o o o o o
o o o o o o
V V V






•HUJOOrH lO^iHtH m lOi-lrHf-l Ot Ol
t*i o m o (N ro o o • ^3* o o o o o r**
a o (N o o o o o 1-1 oooo o o
o o o o oooo. o oooo o a
V V i
i
1
!


1
s
mJ
                            C3 O O O C3 O O <
                                                                       \ CM <
                                                       No   ^ ^a* o IH
                                                       /         V   V V V
                                          *Hr^fOfOtr>c>io
                                          OinOOCN rH TT
in t~ o o
oooo
                                                            O O r-l O

                                                                  V
                                                                      o o o o
rn fM iH in
CN O O O
o o o o
                                                                                        O o o
                                                                                                    CN

                                                                                                    o
              wj  —•

            4j|~IS   3   &

            fllgS   I   I
            HSS5(B   B   ^


            I   8ll   I   I
            a. u5 fc, i
                                                           X-30

-------
   &S8     S
   's!     s
8,
I05    s
                    O O O O O O  o T o
                     v v m v
           -
    CU 05
                    ,3«-S«oS.|   S
                     S  '§ "J 18 "o O   3>
                                                  X-31

-------
31,
§"5sa  S
g-*s  s
                          09
                          o
            > o
            I O
vo
3

o
                                                i   co  ve
                                                00 VO iH  CM
                                                m CM o  o
                                                o o o  o
                                                        o o  o o o
CM  r-4
CM  m
o  o
\a

i
           a
           
                                  V 03 rH i-l
                               o o
                                v
                                                          SO>
                                                          en
                                                        in o
                                          O O CM  f".
                                          tnr* r-<  \-<
                                          CM i-< o  o
                                                     H O I

                                                     O O O
                                   B
                                   CM
                                    •
                                   in
                                   •
-------
                        r-
                        N
                        vo
                              
                                       o o o o
                                                                  vo
                                                                  o
                                                                              O    iH
                                                                                     o o t

                                                                                     o o
CN    m 
                                                                                      X-33

-------
  ,
'
'§
o


I

1
s
to
JJ
a


S
CM
in

-------

                                          o o o o
                                          oooo
                                          o o o o
                                          in o  o IH 
-------
 'I
 ft
 I 1-1



 It
I
s
gg
o o
00
                       in t
                       rt
                        Nat Analyzed; for iheSe Parameters
                                 in
                                 to
                                 o     O O
                                                                  CM
                                                                  O   H
                                                                  o r»cn     o
                                                                   •  •  •      •
                                                                  o r- o f CM m
                                                                  v     *H m v
 5t
 it
2
rH
         I CO

         !fi
R     sai
-S       a    ^

  t          i
  §rt
  o
00
oo"
                in
                o
        SSS5   g
        o o a   CM
         •  •  •    «
        a a o   <-i
        v
                        N:5t-_Analyzeci_foi!-.'aieae .Parameters
                                                                                                  •*   o ^«   in
                                                                                                  o e\ o o  o o rt
                                                                              •  •  •  •
                                                                             o o o o
                                                                                          en
                                                                                          co
                                                                                          CM
                                                                                                  o
                                                                                                    c— o i1 
-------
          tn -ST 13 o   in
          m v>r-t Cm   a\
               a
                             —     r^      r
                                           O
                                            *

                                           O
                                    o

                                    o
                                                     CM

                                                . . . . fM   iH

                                                OOO   O
                                                          o o a

                                                          V V
                                                      o

                                                      V
                                                                         o   o

                                                                         o   o
                                                                         V   V
                                                                                               -H (M
                                                                                               O
                                                                                                              O    O

                                                                                                              O    O

                                                                                                              v    v
                                                        O


                                                        O

                                                        V
IB    3 vo
; S 2 3 S
M!H-y,5
        1 
                                                                                   o

                                                                                   S9
                                                                                                 3°.
                                                                                                                                        i
                                                                                                            000
          IS
          U r-l    4J
          4J **s»   ! C


          S Ed 3 c\
     — 
-------
gg
o o
ooooo
o o o o o
o 10 p o i
    i o o o r» m o o <
aoooor-tooooooo
    vvv      v v   v v
                                                               coiOTt*   r^cnM   Tcvocn
                                                                             oa
                                                                             in
                                                                             en
                                                                        v   v     v v v 3      vvv
§

I

CO
o
                       I O
                       •  •

                     P O
                                 in
                                 o
                    3
                    o
                                         :§§§§
                     ooooooooooooo

                          vvv   vvv   vvv
                     CM
                     CO
                     in
                                         CO g CM

                                         pgg
                                                                       en
                                                                       o
                                                                       a
                                                                                            cn *» CM r-i cn
                                           §OCVlOcnOf>4   OCMOOO
                                           oooooomoppoo
                                         ooooooooooootooooo

                                             V   VVVVVVVV      VVVV
                                           g
                                           p'
                                                                                                          o

                                                                                                          o
5
3 &
fen**
•*§
S
3
B^
§ Ben
O vo
O P
u

w CM* CM cn


«
3 CA
d ° M
3 "1^3
05 CM  p



O' inincn CMr*»cMCM^» cn co
ir^cMcnp^ OCMC300 3 •£
ntHppoovopopo co <-i
ainpoopmoppop p *-i
vvv^^* vvv
                                                                                                              3

                                                                                                              S
                                                              X-38

-------
I JETS 8 "US
!   o OlcviS in
                       Ol   CO

                       O VO O 00 00 VO 00
                       o p- o o in
                       O O O O - O -
     I w^




      1
        <*> 3 95
           o  in
           .in  oo

        o «e>TS *r o <») *o  on
i C1r4 & in  CO
I Ji VO O «9 T
!   o ffl«N es S
                             o m < o
      i1
   n 2 m
   v ? o   v
   o a) CM CM 
-------
J1 ~"
•Q n o t-i
                         o
                          •
                         o
                                                                                              a
                                                                                              o
                                                                                              o

                                                                                              CD
J^   «J
ffaSS
                                 3
                                 a
                         O
                         v
                              o
                              v
                                                      a
                                                       •
                                                      o
                o
                v
                                                                 o o
                                                                  •  •
                                                                 o o
 tsls  «
i ei«5 ft in  <
 *>§ 8  ••«:
         !8.
                               a a
                               oo
                                              a
                                               •
                                              o
                               09 00

                               §3
                                *  •
                               o o
               03   \n
                ••(  CM
                o  O
                •   *
                o  o
                v
                               ~l PI
                               O O
                                     "co
                                    o
                                    V V V
                                    a
                                    v
n     p9

O  O O O

d  odd
   v v
                o
                V
                                                        us
                                                        fH
                                                        O
                                                        i •
                                                        o
o tH en o o o  o
d d odd d  d
v    v v v  v
                                                      a\
                                                      t~
                                               o o o  rn

                                               dad  -4
03

O
                                                                      o  i-
                                                                      d  d
frnlS
  SC^.  5
                       o
                       V
                    a o o «i
                    V V V
i-4 I1 Of
o o o
 •  • »
o o o
             o  o
             d  d
             v  v
                                                       o i

                                                       o i
                                                       V ,
                                                                      o
                                                                      d
                          i-l ^  >>4
                          o
      %  CO
     t*i vr
     i- ts n
          s
          s


          S CO
    i-ls
     Sfs
    i«i-8«
        •a  P
                                    i-l rH
                                    o o
                                     •  •
                                    o o
                                    V V
                                 o
                                 V
             o
              •
             o
             V
                                                  o
                                                  V
       t
     Sg-S-SS   4

     1*1 lit'  «
       •g 2*2*5 «
QSoS'§O^15'§S~';:iOG
-------
I
|S&ri  2
*SSSSS
                 II
                                    §
                                    0
                                                  in  m

                                                  S  3
                                                                           CM
                                                                                       a
                                                                                       o
                                                                                          o

                                                                                          d
i*  .
Sen

•a,
      r^i  3
       en *_ •«•
      ! *s-oi m
                 ooooo
                            oooo
                 o o o o o o o o   o o
                     vvvvvvvv   vv
                                                   oooooooo
                                                                    nOi-i  OMOOO
                                                                    ooomooooo
                                                                         rHo

                                                     V    VVVVVVV.VV
                                                                                          in
                                                                                          in
                                                                                          o
      e\
      \ a  03
      i in  co
      I *^i 4?
      I CM CM en
                 o o
                 o o
                                           g
                                           o
                                           o
                                                   o o o

                                                   odd
                                                                 CM
                                                                 o
                                                                 o
                 lllillsllllll
                 ooooooooooooo
                     vvv  vvv   vvv
                                                      c\
                                                      o
                                                                  i-i «    CM *. CM H m  .-i ,
                                                           ,'r<'r>mo>H   o CM o o o  o
                                                   <-iOOCMOOOO  TCOOr-ICMCOOi-l
                      i«r\pooo^pooo
        r- o o
        in o r
                                                                            IN in CM t-< n
                                                                            o e* <-> o o
                                                                            o o o o o
                                                                                      o
                                                                                      ••r
                                                                                      in
                                                                                          in
                                                                                          o
                                                                                          in
                                                   ooor-ooocMoooo^rooooo  IH
i&   a^
 T3 co o -t
I "x 1" >ifM  VO
I O*H 0 ^  CO
I 44 vo S m v T
  o (S T? CM n
                        


dd   O rH
s

CM
                                                   000

                                                   odd
                                                                  a
                                                                  o
                                                                           in
                                                                           o
                                                                           o
                 oooocnooor-ioooca   m

                 ddddddddddddi4   CM
                   VVV    V V    ,v
                                                                ^'cvifOo^i   OCM
                                                   o o o in o o CM IH oooomoo
                                                                                 OO
                                                                                 oo
                                                              tHoi-
                                                          vv      vvvv   vvvv
                                                         3J-;

                                                   _ u a2S2 -
                                                   <3Sc33<3£_
                                                X-41

-------
                              iH  o co in
                               •   • •  •
                              o  o o in
             >p 3 f* •»
             o « ^ CM
                     S
                 ^   o oa m   tn
                  *    •  »  •    •
                 o o o o in o »-4
                              VO f-4 O O> I . . . _
                              CM O O O fH 09 VO

                              o oo o *•< «41-5
I
•-< VU o  03
10 IH r» v *
o u •» M n
                              •» «M o MJ eo  in
                 5*
                              o <*> o r P> » in
                                rt     tn  •v
                              o T-I o 1*1 cv >H m
                                i-l     IT  CS
                             o
                               •
                             o
                                  i-l VO     •»
                                  o wa in co T-I
        !^
            r     ^

            *P Q M ^P ^

            O K *«F CS f
                             O   O VO CO   f-4
                 o o o *H in CM H
                                    I

                                    I-



                                    ii
                                    
-------
a

o
           'O fl 3 O
         01 ""s, '(J1 »** O   O
           ftjl,-4 IM *   at

           •* s 8 $ s s
             m

             CO
    s
    o
00
 •  •
O O
  r»

  o «
   • •
  o o
[I   V '
           «-i.-i'Hi-(CMCN
-------
!*
  u

'"Ji
                            CM rH     in
                            O O  T  i-|
                            O O  »-l  O>
                             • •   •   •
                            o o  a  *•<
                                        <*> iH O
                                        >r> o a>
                           m
                           n»
                           o
                            •
                           o
                    va o
                    o o
i
               i-l  iHCMr-4
               o o o a o ro o o o e: o o
               v V V V    V V    V
                                          ^H CO   Ol i™(  ^J" Ifl (^   Ol ^* ^* ^^ CO  V  ^
                                          t-t^(Mlrt«HOtf\^*n*»Or^ OU^OOO  \O  O
                                         CNOP^VOOOOCNOOOO o o o o o  o  r»

                                         
-------
    ~-
  ,££ V0  ^ o
                    t-l VO O CM 00 O> fM
VO U
H iH   -U
ij *^   G

CO   W I
            O
            O\
                     in ^r iH
                     o 
-------
  I
 IS
      r^ tB r»
      to   vo
      rH rH rH -q-
      O <3 V tN
      n jj in
              I
o

o
                                   s;
                                   10
                                   tn    : t-4
                                   in     o
                 a\
                 o
                 r»
              in

          o\ *-i m   a\
          CM o o   GO
                       m vo
                       m TI" .-i
                       ooo

                       000
        US
        *«•
        o


        O
                                                            oooooooooo

                                                            o'csooo'ooooo

                                                              V V V       V   V
                            §  S
O   «3
iH   O
o   o
 •    •
o   o
                       I  s
                                                   in   o

                                                       §T
                                                       ft
                                   o
                                    •
                                   o
                                                       §
                                                       o
                                   s
                                   o
                                    •
                                   o
S    !
o    ,
vo



o
                  in
                  •^
                   •
                  o
  o\ <"i   in

ooo   o

o' o o'   o
                                                                                              t-* in in in t-* in in
                                                                                        oooooooooo

                                                                                        V V V V      V '  V
                               o « CTI
                               o o->;r-i
                                                                                        CM     I1

                                                                                        O t-l iH O
                                                                                        O O O O 00 «N
                                                                        in o cn o
                                                                        <"i o 10 o
                                                                                        ooooro vo vo r» 09 oo oo
                                                                                                    CN 1*1 rr in
                                                                                                    CM CM CN CN
                                                    X-46

-------
                  o

                  o
                                                                                            en   en rH m  CM
«8fH
                I
               c\

               S
  CM     VO


O O O   rH
                O O O

                V   v
                                      Not Analyzed  for Other Mstals
                                                                                 VO
                                                                                 rH
                                                                                 rH


                                                                                 O
                                                                                                 CM


                                                                                                 O O
                  O

                  O
                                                                                        in
                                                                                        rH
                                                                                          •
                                                                                        O
                                      Not Analyzed for Other Nfetals
                                                                                                  01
                                                                                                  CM O9
                                                                                                  o vo in        m
                                                                                                  O rH O in CM rH O

                                                                                                  d o o co in co o'
I f-l




It
a   :  g
                          CM     CM
                        rH r-i rH   CO
                        ooo   CM

                        o o es   o

                        v    v
                                                                 CM

                                                                 o
                                                                                          o   S
                                                                                          o rH rH
                 :§
                                                                                 CO
                                                                                  •

                                                                                 VO
                                                                                                 CM
                                                                                                 O CM CT> Tf
                                                                                                 o in rH o -n1
                                                                                                                  in
                                                                                                                  vo
       I
                                      Not Analyzed for Other Metals
                                                                                                      in
                                                                                                   CO PI VO
I.
     8£
        >,cr)
                                      Not Analyzed for Other Metals
                                                                                                      CM
                                                                                                   m CM in   CM r»
                                                                                            .  _  _< 01 to 10
                                                                                            rH   CO CO CM in
                                                                                            CM   rH O CO *T
                •H a rH
                o o o
                o o o

               V   v.
                                o
                                o
                                                                                                  CM   CM
                                                                                                  O   O
                                                                                                  O O O CM
                14 -A


                SSo
                ••H (0 C
                •H £ -H

                OJE3 N
                         01
                        rH

                        S
                                            § - § *j

                                           ••H a 'o "313
                                                                ijji!
                                                             01
                                                            •a

                                                            *.
                                                             Ll   rH
                                                             O   IS
                                                   X-47
                                                                           is g  in   5   aj
                                                                           jj c  d   o   £
                                                                           •ri a  *>
                                                                                    13   'a

                                                                                    P   Q

-------
2
«t
11
                                     CM
                                     ID

                                     VO
in


o
                                                                          f-

                                                                          co
                                                                  en o en
                                                                  i" cv o
'WO'*
rr co in
        I
         1 »^

         11
o q>
r
                                                              o   o       o
                                                               •    •        •
                                                              o   o       o
                                                                                    or-    1-4
                                                                                    in in H  m
                                                                                    o o o  
-------
fr
    •- 3S
    V0 
-------
      sss
                       8

                       o
                   o

                   o
                       c-j c\  m
                       o o  o

                       g§  §
                                                         ;§§
                                                         o o o  o

r-4  O3 O
S R v Pi
»Nm

I'm
 10
ggs
o o o
1
s
§oS
o o
odd


CM
s
d



in
d


o
V


i
0
d


1 II
0 H O 0



CM O
O O
d d


Sooo
o o o o
V V

m
o
d


»-* CM H in  o o a
o o o o o o
o o o o o o



i**
ui CM tn
o o o
O CD O
d do


000000
o o o o o o
V V V

m
o
o'
C    4)

I    u
+ **f

 t
rt  in  o\
O  U3  t-i
tn  Co ^ r*
S  SSR
                   O O



                   OO*
O O O O O


o o o o o
                                       a
                                       o
                                         o o

                                         o o
                       §
                       o o
o

d
   §«^
  _o

odd
CJ  iH *M iH -li-l-li-<
                                                                                      .8
                                                                                      ft a
                                        x-so

-------
             »

           us
                                                    §
                                                    o
                                                                           Cn    CM
                                                                           o    o
                                                                           o    o
                                                                           o    o
                                                                                                            Tf> p.
                                 o   *s*   «-*
                                 00-*
                                 o   o   o

                                 o   o   o
                                      CM i
                                      O I
                                                    o o o
                                                    s
                                                             g
                                                             o
                                   ss
                                   o o
i
o'
CO
o
VO 00
en en   tn     r*>
O -itN
                                      (NomooooonooootNOOOooo

                                      o'cso'uio'o'o'asoooor-oooooo
                                                              V V V
                                                                         V V V
                                                                                     o
                                                                                     o
                                                                                     o
                                                                                                                 ooooooo
                                                                                                                 o o o oo o
                                                                                                   s
                                                                                                     in o *w t^ tH cn
                                                                                                          CM r» i~ **
                                                                                                            i-fVf r-t
                                                           i'Sl-q
                                                     g -a a o  a -d
                                                     3 Ut Mf-*^r-t ^  -._...-
                                                     aassssafsss
                                                                                     (0
                                                                                     i—4



                                                                                     O        Z      ftl    & (Q (Q      *H
                                                                                     S'        S      OJ    ff W'H      3
                                                                                          m&4      LJ    3wO(D4J
                                                                                     M   -4    S   oiQaiajeS*   ra
                                                                           !g        (URIlJi-t'O      O-H   W
                                                                           jjSgg   ^   4J    3   Qi^f*i-tp-tt-H^;^   o

                                                                           J-H33   4J   Jl    O   S   Sj3jjQ§   S4

                                                                             , 'ti !fi                 ^^HSiOO'SSsS
                                                                             ; 3 S3   i-t   •-«    g   cC O O^EH EH « fa ai-i

                                                                                     3   S    jji        -j
                                                                                     O   O    P        CN
                                                                                     &^   S    O        
-------
                                           p* trt  v
                                    r-     5S  3m
                                           00
                                            •  •

                                           o o
                           ^•^11   *-4 i-l   O
                           Cl O   CO O   O
                           O O   O O   O

                           o d   o o   o
                                                                                             !§;!
                                                                                            §
                                                                                             *
                                                                                            o
                                    §
                                    tn
                                    in
ii   83
o o   o o
 » «    •  •
o o   o o
                         in
                             §<-4   o *i*
                             •-4   n CM
                         o   o   *H o
                                                             o   o   o o      o
2
O
O


O
                                                                                            oo o   in
   §o o m •<*• o *H
   o o o o o o

40 ddddd d i

 V   V   V V
8

o

S
CD CM



P.   §
o o   o
                                                             §   8   S
                                                             S   S   §
                                                             o   o   o      o o   o
                                                 ss§
                                                 o o o
                                                                                                     a

                                                                                                     o
          i^   a
          iff-.
          !  en   •»
                                    00   O

                                    do   o*
                                  s§
                                  00
                                                   > &5   51
                                                                                            o o o   a
                                                                               H CI *H «   •-! in <*1
                                                                               oooo-vooo
                                                                               oooooooo
                                           OJ M
                                    *H     »*4 O

                                           §0 O

                                           O O
                      \o     ea         m

                      S   SS   S3   8
                      O   O O   O O   O

                      o   oo   do   d
                                                        iii

                                                        d o d
                                  OH
                                  O O iH

                                  O O O
                                                                                                                     o
                                    s
                                    CM
                                    in
m m

S3
                             p»   \c co   mm   M
                             O   CD .H   «J rt   0
                             O   O O   (NO   O

                             o'   o'o   do*   d
                                                                                            o o o   in
                                                                                                              OHOOOOOOOO
                                  lO^^^Ooj'^^'J'-roT^iacu
              eu w eu
                  O§B   S   ^•r»o5*H(nr^
                  •-idfl   p         •H»HeM<>i(NCjfM
-------
s?
      CO  CM
      vo ^» r*»
      fS CM «
                   3  CM
                   O  -H
                   O  O
                         i
                   000
                                   o o o

                                   o o o
                                             o   o   o

                                             000
                            §§
                            o o   o   o
                                                                    O
                                                                    O
                                                                                   O O O O 10 O    CO   CM
   )   VO ^ P*
  f*l   r* CM n
                    O O VO
                    o o o

                    o o o

                      V
                                   CM         coeMmt-mvpin
                                 loonoin   vovoocooo  o CM
                                 3 o •«• 3 o   o P» o o o o  oo
                                                              o o o o   r^   oo
                                  OOO^OOWOa   o
                                                                                            in <*i   aa
                                                                                    C3 O O O VO O r-4
                  o o o   o
                    v
                                 vo o p»  in
                                 CM o en ••r o
                                                               in us en S1S
SSSSSSiSilS
if*t 4J «H fH   (3
rt'B'S'rjCJJja..
(T3r-* Q O-M-rH <04J
o.o.iss-isx
                                                                         a.
                                                                         i
                                                                               m   £
                                                                             «-
                                                                             1
                                                  X-53

-------
    Nbt Analyzed For These Parameters
                                                                       O O O O 1

                                                                       V   V V
   Not Analyzed For These Parameters
                                                                       in en ro m o
                                                                       O TH O O O
                                                                       O tH O O O


                                                                       O O O O CO

                                                                       v  vv 3
33

00

V V
o

o
in fH *H r* -o
o o o o in
o o o o o

o o o o o
                                         1!
                                                                      tn oj (n n
                                                                      o o o o ts
                                                                      o o o o o
              X-54

-------
»
O j|ji '
01^8 ' CM
m OHH 4J IH 09
i*s |3SR
1-4
<*4
§ a
3 «

fc rH -3
w ^N a
o en ft CM
C ft Cu *H 00
o vo co v r«
O en T CM m

3
O
•
o





§
o
in
O CM CM in
§ § 8 i
o o o o





•H in o CM
^ o o O CM en m
O O OJ O O O -"T
o o o o o o o
V V V

en
CM
O
O





in
in
09
rt

8.
o





•H
«-H
d
CM
O
O
o
1 o





«T CM CM
O (^ O O
en CM d d
10 In So
§O CM
o o
d do





«» "a> in CM CM r- en
o o o o o f en
o o o o o o CM
V V V V
s
§n
3 8
00 CM





* * •
O d O O

in to oo
O (N ft vo
                                                                   CM eh

                                                                   O CM

                                                          o o o '  do
                                      in
                                      vo n o
                                      o m vo
                                                           CO GO CO tO
                                                           O *J3 VO **f
                                                            •  a  *  •

                                                           o o a o
                                                                                r-
                                                                                o
                                                                                                          o in    «-41
i 03 o en <
i o o m i
                     oooooooo

                          V   V   V
                             f< o        «*

                                                                                     d CM ca CM o 09 in
i ^K fi
) C1<-l

!•»*«
       ! en «* r~
       I m CM en
en en <

do1:
o o *
     > o
     I O
CM


S
O
o

dad
               S
               o
                                                   o
                                                   o
                                                                       33
                                                                       o o
                                                                                                                o
                                                                                                             VO O
                                                                                                             rH O CM      VO

                                                                                                             O O f •» 9\ tH
i
  en  s
  en 1-4     en
  r* Cu r*   C~
  vo   en *r r~
  en   en CM en
                        in rt   in in   r»
                     vo'WrtCNO'Hcnoo
                     f-4OOCMOOOO

                     d d d d d do d
                                                          m CM CM
                                                        o CM o o

                                                        rn in d d

                                                        v S v
                                                    S^1 in
                                                    o o

                                                  odd

                                                      v
                                                         CM

                                                         O
                                                           •

                                                         O


                                                         V
                                                                                    o

                                                                                    v
                                                             CM
                                                             CM

                                                             in
                                                                                                                8
                                                                                                           O O O
                                                                          d CN d vo c~ o
                                                                                 r^ en o CM
                                                                                 1-4 in t—

                                                     ililliilis

                                                          X-55

-------
                               Mot Analyzed For These Parameters
                               Not Analysed For These Parameters
                                                                                           in CN TH r- *?

                                                                                           O O O O IT)

                                                                                           00000
                                                                                           in o< n m

                                                                                           §§§§§

                                                                                           o o o o o

                                                                                           V  VV
i
                               Not Analyzed For These Parameters
l
                                                                                           in to fo irH'Hfir^t 
-------
                   o o o -v o o
                                                            s as?
                                                            i-Sd »4
                   in tn
        \o p» ^    P* en
        o CM vo    o CM

        d d o    o o
                                                                                             *? in en
                                                                                          O O P» «H

                                                                                          o o o o
 53
I IW
 Ed
     r^   m   oo
                   rHi-tOir)OOOO


                   dooo'do'do
                                                                                                                              o * o r» oo   o

                                                                                                                              O <»?O oj tHCMe!
                                 o

                                 d
                                                                                    o

                                                                                    o
                                                S   5
                                                o   o

                                                o   o
                                                                                                                          m a
                                                                                                                          * e3
                                                                                                                       O O O O •V ff» O
                                                           m co o o

                                                           v K vv
                                                                                    o o o

                                                                                    d d o'

                                                                                       V V
                                                                                        s
                                                                                        o
  •n trj
OJ -
-------
                          o
                          o
                  o
                  o
                  V
                                  o
                                  o
                          a
                          o
in

o
                  R
                  o
                  p
                  V
                 a
       in w en
                          in
                          3
                          o
                                                   o
                                                   o
                                                   V
              o
              o
                                                                          S  ff
                                                                          o  U
o o
o o
                                   I H  CN r-<  i-l
                                    O  O O  i-l
                                   \omoo  o
                                   ; V    v
                                                       m 
                                                       OOt«f'»4r'1OtOO
                                                       O O O O O O iH O
iH in H P-    CN
oooointno«
OOOOOOffOinO
OOOOOOOOOO
V V
                                                                                o o o •   1*1
i^a   «
          to
        N PI
                           Mot Analyzed For These Parameters
                                                       PI (N 00 P>
                                                       o oi ^> tn o  T
                                                       O O rH «H m  tO
                                                       O C3 O* O C3  i-<
s*
2
M
s;
PI
* •«*
co ^o
N 'r r»
rt w PI
                                                                            ooooooooino
                                                                            oooooo'ocjoo
                                                                            V V          V  V
 •3 in  CM
1 -*   tn   n
 *a
    §
    i  ~
  sluP
  a;Sgfl
    g *«**H CD
  11 aj  jj .4
  1 a x sU
  M iJ 5 a S
                               Analyzed Bar These Parameters
                            o o
                             2Sg€55555
                            JJiflfifiiiiUi!
                           I -WrH Q
s^
                          o •«io.eTTiTTT>,o.c
                          rtCN-4Afi tfr t
                             
-------
111?      s

 58.  1    vo
!  —  •    en    vo
                       CO C^ 00

                       3SS
                                     VO
                                     o
                                     r-

                          O O O    IN
vo'    CM i" r-
m    ^ CM co
                       en    in    ^>

                       §SS    5

                       C5 O O    O
                                              eno co

                                              o o o
                                                 en oo in    i
                                                 en «H oo o (
                                                 CM o CM «w i
                            vo    on r-
                            m    «H oo
                            CM    O O
r)f OO in
co CM r» en
O o m o
                                                                                               en
                                                                                              'in    09
                                                                                               o en     CM
                                                                  co    r»
                                tn
                                o oo
                                o «n
                                                                                                        co vo iH m
                                                                                                        en CM CM in
                        o o a
                        v v
o

CM
                                               ooovoo
                                                                •» rr    CM
                                                                r~-or-4CM
                                                                co co o o

                                                                o in o o
                                                                                             vo oo CM
                                                                                             o ^» »H
                                                                                             o o o

                                                                                           ' O O O
                                                                                    ro
                                                                                    CM    in
                                                                                    O    O         CO
                                                                                    o o o o    vo o
 4J a)    -U »-t

 § a g  2
 r-. 4J 1-4  3
 Cu en tu  a
                        III
                            i r- co
                            I CM CM
                            I iH I-H
                                    O    O
                                                                   X-59

-------
                                                                                             in to CM in

                                                                                             o o o i-i
                                                                                                             00
                                                                                                             r»
                                                                                                             en
                               Not Analyzed  for Priority Organics
                                                                                           §§*
                                                                                                en o  3 iH
.M r-l**
      <   en
        v in
        tscn
                                             I
                                                         00
                                                         00
                                                         o
                                          S1-- 03 U3
                                          -i 1-1 i-i 1-1


                            8"«*j«l|j|
                 S'.ISS?1???
               j « CM ^ « O C^«n_'* A . ._

               i u "-Tin's CM »J^?i-TrJi-T
                   ^•r-eaiH<
                                        rt Tla.fl »   -ff
                                        >i    B p   IJ
                                      >t g «H "51 g w  ; g

                                      OASU'H.clfUO    O
                                      T   S O >iTJ G'«™t

                                     Si'S.iiS 2 1-6
                                    ^OlffT  I  
-------
      fn
      vo    en
      en    en
      r* ^* tn
   Cd in CM m
co en in
o *r fn
ooo
                                                     en       F>
                                                  vo *    fn CM
                                                                    ••*    o o
PI o r» 'r
o o o o
                                                                                                         oo
                                                                                                         o
                                                              IP
                                                              fn
                                                                                                           CM oo co r-
&vo  3 fn
  fn /r! vo    en
              en
      i.. .   «]• in
     W in  CM fn
                         t in in
                         i  o o
vo i
H en


                                                                          ® « ° 3 s a a
                                                                                      iH CM
                                                      in
                                                   o in
                                                            O
                                                             »

                                                            o
                                                                          r-  O CO
                                                                                                            co en en T
                                                                                                               .-( CM i-(
[ in r»
                        o vo CM
                        ooo

                        o' o d

                        V
                                          CO^Ti-ICO
                                          caencsiTH
                                          oi—oo
                                                                                            CM r- «a> eg
                                                                                            >H o vo o
                                                                                            o o o o
                                 rn
                                 »r
                                 CM

                                                                                                                             o in o 10 *H o o
                                                                                                                                      in en o H
                                                in on r—
                                                (N O t-l
            PJ

            o
              *
            o
                                           in
                                           CO
                                           en
                                                                        m CM
                                                                        en fn
                                                                                            co vo vo
                                                                                            vo "> en
                                                                                            (MOO
                                                                                                               en

                                                                                                               
-------
                                                                              o o o o o o
                           Not analyzed For Priority Organics
en S3 S
                                                                        ooo
                                                                        ooooooooino

                                                                        QOOQOOOOOO

                                                                        V V V           V
                                                                              O >O  p»
                                                                              rt in CN in
                                                                              o o o 
-------
n

S
en CI
                                   O O fH   «<4

                                   O O O   CM

                                   V V
                 •H   ^  •   "^

               fl3-.|S   3      S

                  8 .c ~~ o   s   ui-J
               a cK c w   ij   !>f- v CM tn -ICMr>»CMr»O
otni-iooocaooooo
VO
o
fe

-------
 itn
 1*1
I
     64
•a;
s
o
                                           o
                                           V
                                                   o o o o
                                                   v v v v
                     o  o
                     o  o
                     v  v
                                                                     to
                                                                     to
                                                                     o
                                                                     o
                                                  o o
                                                  vv
                               n   m  »H in
                               O CN O rH O C4
                               o o o o o o
                               o o o o o o
                               vvvvvv
if s1
                 o
                 v
                        o
                        o
                        v
o
o
V
o o o o o
o o o o o
v v v v  v
                                      O

                                      V
                                                                           O* PI   fO
                                                                           OO   OCM
                                                                           OO   OOOOOO
o o
V V
OOOOOO
vvvvvv
                 o
                  •
                 o
                                         o
                                         V
            ~t i-4 i-l »H rt riH
            O O C3 O O p
            o o o o o p
            v v v v v S/
                                                             O
                                                             o
                                                                           (M tn   (no  i
                                                                           o o   o CN o <-i <
                                                                           oo   o o o o i
                          o o
                          V V
                                                       OOOOOO
                                                       vvvvvv
                               ass-,
                             o o o o o
                            i/H i—t r-l r-f »—*
                           -•S-S-S-S-B-
                           saaaaaa
                                                     a
                                                   *3*fll  9
                                                   cu 1  (U
                                                     O4 4J W f* f?  r-1
                                                     r-l 'Si'S.^ ,    53 0  H
                                                   >i S •-; 1-1 43 M  a
                                                   fli'lr^^  2
                                                   QJ JJ 3 0 i"H ,fS (1) Q
                                                   I   ffl O ^1^ g'"J

                                                   "*"" "ll"
                             I
                                                                 *  3
                                                                 00  8
                                                                      o
                                            X-64

-------
                        3
-------
I*   3   !n
                                     in
                                                     HOOOCMCMOOCMO

                                                     dddddrHoddd


                                                     V    V                V
   VO
S3
                            o   i
                            d   d
                            v
                                                     en   o
                                                     r-t   CM
                                                     O   CM
                                        o a

                                        V v
<-< >-* ^ i	
O O O O O O O

o o 'o o d d d

V V V V V V V
                                                                            3|S





                                                                            -tilt   *
                                                                            i-l  Qi U<^ jU

                                                                         ii'S'S-'bLfi ^

                                                                         l^f^Ss^
                                                                                               in


                                                                                               d
                                                    CM in   m   en   rt in
                                                    OO   OCMOtHOCM
                                                    oo   oooooo
                                                                                                         O O

                                                                                                         v v
                                                            o o o o o o

                                                            v v    v v v
a. tn tu a uj
                                                                                                1    y
                                                              X-66

-------
                 m
            ,
            s
                                 Hot Analyzed for These Parameters
                                                                        s
       us 1-4
       a*
>*', s  A
 |! g,2
        'tall   i
        $°' S « A
        !  f } . 1- 04 •»
                       m 
-------
.ia   o    in
no   o    in
  •H   o v CM
  «r   vo CM  CM
 «r    *»• CM m
         8
          •
         o
03
 •

O
                       p-
                       <*)
                       in

                       o
                                                                                   a\
                                                                                   in
                                                                                   in
                                                  I
                                                                                                 -li-li-ltH
                                            OO   OOOOOOOO
                                                                   CO
                                                                   in
                                                                   O
                                                             in PI
                                                             CM O
                                                             00
                                                                                         >   TC    >-i in
                                                                                           CM CM  rt O CM
                                                                                           o o  o o o
                    O O


                    V
OO    OOOOOOOO

v          v v v >>  v  v v
                                                             o o

                                                                V
                                                                                        o o o o o o

                                                                                        V V    V  Vv
                                       o

                                       d
                                                                                                                en

                                                                                                                S
                                                                                                                o
                                                                                                            38
                                                                                                            o o
                                                                                                            o o

                                                                                                            00
 Cu W !u
                                                                                                                                             CM m Tjt in
                                                                                                                                             tM CM CM CM
                                                                                                                                             t-| <-4 i-l <-4
                                                                            X-68

-------
2la
w •'•n. \o
f j?s

*i
i-'
|*«
1  iS
   in
   in
 i   in
 i   in
 i •«• CM
 i CM n
              VO  1O
              o  o
              o  o
CM   «u"   in
o CM o   o
o o o   o

o o o   o

v v
                               Not Analyzed For These Parameters
                                                                            o  o
                                                                             • "   •
                                                                            o  o

                                                                            V  V
 \B3   S « KJ
 I •"• rr   "a1 CM tn
                              Not Analyzed For These Parameters
                                                                    S
                                                                              o  o en
                                                                               •   • *
                                                                              m  oo in
                                                                              rH  *V f"4
                                                                                       co
                                                                                       in
                                                                                       en
 i«i  So
 : o    »-i
 I is <-(  «-l
 o  CM
cn  in
n ^» CM
** CM m
               SCO
             CM CO
           O O O   O

           o o o   CM

             V
                                                                             o

                                                                             CM
               CM   00
               o   o
               o   o
           o o o   o

           V V
                        §   §
                        o   o
           >i   £
                                                                                     «
                                                                                     rt  •   CM r»
                                                                                     «H     1O to

                                                                                     CO     M en
                                                                                         in

                                                                                     "!   §.


                                                                                     V V V
                                                                             t   i-l 9 CM
                                                                            o   o •«• m   «j
                                                                            o  . o «-( •*   en

                                                                            o   o o o
                                                                                        o
                                              X-69

-------
              §
                                  Not Analyzed For These Parameters
                                                                                     8

                                                                                     o
 I   «


  i   s  s
      CM in CM *-4 •»
                                                                                       tH    CM o •» o r~
                                                                                            vo 
-------
     53
                     s   §
                     d   d
                                  Not Analyzed For These Parameters
                                                                            3
                                                                            d
3
ij ^
 11*
VO   O : 00
    So  in
    in 'a- CM
^»   "v 
                  i
                   §w .H   r»
                   o o   o

                  odd   d

                  v v
     I
    os-J5iS  a
    asi"a  p   s
    a cK c w  S   >
    w  «-i  >i
                                                                         «^J!«*1I
                                                                         r«S  *O     !D -H
                                                                         1-13.
                                 1
                                                                                          g
                                                                                          B
                                                                                          fi
                                             X-71

-------
w
                             Not Analyzed foe These Parameters
                                                                                        §<-i i«
                                                                                        *-4 r-(
                                                                                   o 03 in o H
      VO   »  VD

      5  3S m
        TH   05 •
       *  —»i* 3

       Z |jj  a
       Q 3*5. C 8
       M ">-l O
         g ^-»-r< 4)


       *l*ll
       rl JJ •-< 3 B
       & CQ Cu Q W
  11511,5.23^^3 g£ a.
  fieiaff-sfi-s-s-s-ail §;
  iSaaaaiaaaafiss:
Sc-i O f.
0»H>HiHt3M-H»H^i-(ij; J2 J2 fl >,   i  1
  *3L    S 8   S  ci
 S^ N*rt rt jp 8   J)  ff
 fi 35lS'a:5   S  5
,¥5SSft-Ssl  -2
!Ar*IIS!a3«  8
                                                       M oo  m oo oo 03 i-t
                                                       OrH  oenmTTOfn
                                                       oo  oomooo

                                                       do*  a'o'oo'oo*
                                                       V    V
&0-
            ill
                •3  P
                                                       T in i»- eo en o rx i
                                                       iH »-l i-4 iH *-4 CM CM (
                                                       ^ »-( rH rH rH iH i-l i
                                               X-72

-------
.&
•55
  mo
S!
CM
                         00
                         —t    r-
                         o    -4
                         <=    o.
                                                in o 10

                                                o o o
                                                          CM


                                                          o
                                                           co in
                                                      oo   o in
                                                      -4   O O
                                                                           P"    00
                                                                           in    p»
                                                                           1-4    co
                                                      in
                                                      co   t—
                                                      o   o
                                                      o
                                                                                                                          in oo m
                                                                                                                     o •» on en P-
£ «-4
         r» I

         en   co

         vp «r uj
         CO iN CO
                         CM <-»er»
                         o o 1-4
                         o o o
                       m oo ui   .-4
                       O T ON   00
                       kO C3 VO   O
                                                            r~   i"  co
                                       ,_..,    incMoo   OCOO.-I
                                       r^ocnvooococooooo
                                                                                   Svo CM CM re in
                                                                                   co o o o r»
                                                                                 o o o o o o
                                                                           in
                                                                           CM
                                                                       • v v v
                                                                                                                CM   CO
                                                                                                                O O O

                                                                                                                es J cs p»

                                                                                                                  v   •H
                               CO
                               i-4


                               O
                          in
                       in CM cf\
                       in O r-4
                       o o CM
                          o p o

                          V V
                       locotrin   CMooini-4inco'     oomcMrtcoi-4
                       VOOlOOinOCOCMOCOOi-4    OCMOOOO
                       o o CM o o o "loooooinoooooo

                       oooo oooooo ots^oooooo

                               vv       vvvvvv   vvvyv
                                                                                                         va

                                                                                                         o
                                                                                                                              oo
                                                                                                                     in
                                                                                                                     CM
                                                                                                                     o co •

                                                                                                                     O CO CM
                                                                                                                O   CO        O
                                                                                                                o es es «s o o oo

                                                                                                                O i-4 O x» CO i-4 «»•

                                                                                                                V V         V
                     O
                          S!
                                       3
                                       £

                                                                    X-73

-------
o
 *
a
        O
         •

        03
                Hot Analyzed For These Parameters
S^SJ   5
o o o   r-
 §  •  •    •
o o o   e
                                                          ca
                                                          o
                                                          10
                                                          r-
                                                                      in
                                                                      en
                                                                      o
                                                                        01

                                                                        3e.

        1
        £

        o
                                                      a   
-------
    £•»    S
     i-    r»    CM
_    o     *    p»
6     CM    f> *»• VO
     i"*    m CM m
                                           §
                                           d
                                                                          o o

                                                                          o d
                                                 o in

                                                 S§ 3

                                                 odd

                                                      v
                                                                                                 
                                                                                                O

                                                                                                d
                                                                                                9
                                                                                                o
                                                                                         §tM
                                                                                      -   o
                                                                                   o    o
3   -8
 •     •
o    o
                                                                                                 -H O

                                                                                                 °<=.
                                                                                                 d d
                                                                                                                                in (N
                                                                                                                                •H o
                                                                                                                                o o

                                                                                                                                d d
                                                                                                        1
                                                                                                         o
                                                                                                                  R
                                                                                                                  o
                                                                                                    O
                                                                                                    o
                                                                                                                  r-
                                                                                                                  o
                                                                                                                             CM in   r*'*o'
                                                                                                                                §O   O.f} tH-
                                                                                                                                O   OHO
                                                                                                                        i-tvoi-im-o".-*    »H 01  o o o o
                                                                                                                                                      oooooooooo

                                                                                                                                                      v    v v      \/ v  v
              in
              ,-)

              o
3|L   s
a <.•»   in    H
01 eno     •   r—
U


Li   S

il-   S
CM    O'T S
W    •» CM fl
                                                                    <»? ro r-
                                                                    1-1 o T
                                                                    o o o

                                                                    odd
                                                                    in
                                                                    o
                                                                    o
s
d
CO
o
o
r*>
0
O O
o o
o o
in
«H O
d d
§§
0 0
o o
in
o
d
i
o
                                                                                                            CO
                                                                                                            ««f
                                                                                                            t-l

                                                                                                            d
                                                                                                                        in xo
                                                                                                                        o •<*
                                                                                                                        o o
                                                                                                                                        CM f M CM i-i a\ in
                                                                                                                                        in. CM tn »-( o r*
                                                                                                                                        •H O O O O r4
                                                                                                                                                      oooooooooo

                                                                                                                                                      v    v            v
                           I T^ ,





                           !1
           in
     Tf    o
     :«*    in    i
     o     «   '
     :CM    V Tr i
     !v    fO CM c
                                                                    o
                                                                    o
                                           S   _
                                           o   o
                                                                               o

                                                                               V
t-l
o
I-l
o
So1
0 O
0 O
3S
o o
0 0
TC
o
o
o
                                                                                                         (N
                                                                                                         o
                                                                                                         o
                                                                                                                             oooooooooo
                                                                                                                             OC3OOOOOOOO

                                                                                                                             ooddoddddd

                                                                                                                             V    vx/vvvvv
                               O  !
                              r = s..s ,,,    ~
                              :•« 1  ^ -y T!    u
                               C 9)  3 g CJ4    H

                              '84 ,


                                        fiAASAAAi-a
                                        I   *  ^  *   * *  fc-'] i y»4

                                        CvlHHHtHHHCilCu

                                        ^»invor»efi»-if^co«n
                                        CMCMCMCMcMcnfnmci
                                                                                                                                H H CM CM CM CM CM

                                                                                                                          HHHt-tHHr-IHt-l
                                                                                                       X-75

-------
•»   n CM e
                    s
                    o
             o
              *
             o
§
o
 •
o   o
vo
vo   m

3   §
                                                      o   o p* i-t "a*

                                                      H   O rH O 0>


                                                      O   O O o' O
                                                              o m

                                                              O O
                    o   o CM en in
                    n   f-< <-<  o o' o' o o'


                                                 vvvvvvvvv
a<3*:eS
M _ iH O
                            8 S S 1,1 I    -I:
                        Is
                        I 5 S fl  sj
                        Qi 2 ^ *" m S
                        51? '3'S -y ^

                        ^11 it
                        flc* a«S«« fi
                          tgrtp-. JC M

                          §5's'ffi5   ..
                        uJaBurtjsuo


                    iaa-ailf1 alS
                    Z 3 »1 il I  | O fl rH 'H

                    4.£^S^-S^SS^
                                                          I O> O

                                                          I VO p.
                                 in vo p-
                                 co op oo
                                              X-76

-------
 !l
en w in
                                                                 o en
                                                                 o o
                                                c«j T» m
                                                (N O O
                                                o o o
                                                 *  •  •
                                                000
       <-<   C\



       r4   (4
  §en o •-< CM in vo
  oa o ft ••( «r is1

ddooJooorji
13    ;C
<9    
                                                         »H
                                                         vo

                                                         d
                                                                                                        o o o o o o '
                                                                                                          IS"
                              I
  o o
  o o
 • •  •
o o o
V V V
                                       o
                                       o
                              o
                              o
                                       °. °. rt.
                                       odd
                              o

                              o
                                           PI in r-t in
                               _.  _ .  _ _.   CNOJOO
                               OOt-JOO   OOOO

                               OOC9OO

                                     V V
!0
o
                                                                              OOOO
                                                                              v w v
                                                                              5
                                                                               •
                                                                              o
                                                                                                        O VO
                                                                                                        O 00
                                                                                                        O O   O i-l
                                                                 in   f-i
                                                                 o   o
                                                                 O CM O C9 O f 019

                                                                 o "5 o »4 c>J >4 in
                                                                      V
                                                •SicJi!
                                                5 T1 P  ° S'- -
                                                lla3l§S
                                                                   X-77

-------
 Summary of Raw Waste Stream Data          ;

 Table 10-16 summarizes pollutant concentration data for the sampled
 raw waste streams for the semiconductor subcategory.  Minimum,
 maximum, mean, and flow weighted mean concentrations have been
 determined for sampled raw waste streams. ' The minimum and
 maximum values are taken from Tables 10-4 through 10-15.
 The mean values were determined by calculating the average
 concentration for each parameter from the raw waste streams
 sampled.  The flow weighted mean concentration was calculated
 by dividing the total mass rates (ing/day) by the total flow
 rate (liters/day) for all sampled data for] each parameter.

 Pollutant parameters listed in Table 10-16 were selected based
 upon their occurrence and concentration in!the sampled streams.
 Those parameters either not detected or detected at trace levels
 in the sampled streams were excluded from this table.

 Treatment In-Place

 Wastewater treatment techniques currently used in the  semiconduc-
 tor industry include both in-process and end-of-pipe treatment.
 In-process waste treatment is designed to rhinimize wastewater flow
 and to minimize pollutant generation, and end-of-pipe  waste treat-
 ment is designed to remove pollutants from!contaminated manufac-
 turing process wastewater prior to discharge.   Specific in-process
 treatment and end-of-pipe treatment currently  in use at semicon-
 ductor facilities are discussed in the following subsections.

 In-Process Treatment - In-process treatment techniques commonly
 used in the semiconductor subcategory include  collection and
 contractor removal of spent process chemicals, rinse control, and
 good housekeeping.  Each  of these is discussed in detail in the
 following paragraphs.                     j

 Collection and Contractor Removal Of SpentjProcess Chemical - All
 of  the  twenty semiconductor facilities visited or sampled collect
.their spent solvents, photoresist developers and strippers.  The
 collection systems include piped-in systems that have  been added
 after building construction,  systems incorporated in the produc-
 tion sequence during plant construction,  and manual dumping
 and  collection.   All of the twenty visited plants separated their
 spent process chemicals by segregating flammable and chlorinated
 solvents  for contractor removal.   Three of the visited plants are
 being paid for segregated spent solvents  that  are resold for use
 by  other  industries.   As  solvent  prices rise,  the resale of spent
 solvents  will increase, but only  if the solvents can be  properly
 segregated.
                                 X-78

-------
                                TABLE 10-16

                               SEMICONEUCTOR
                         SUMMARY OF RAW WASTE DMA
Parameter;

  8  l,2,!4-trichlorobenzene
 11  1,1,1-trlchloroethane
 23  Chloroform
 25  1,2-dichlorobenzene
 26  1,3-dichlorobenzene
 27  1,4-dichlorobenzene
 29  1,1-dichloroethylene
 31  2,4~dichlorophenol
 38  Ethylbenzene
 44  Methylene Chloride
 55  Naphthalene
 57  2-nitrophenol
 58  4-nitrophenol
 65  Phenol
 69  Di-n-octyl Phthalate
 85  Tetrachloroethylene
 86  Toliiene
 87  Trichloroethylene

TOTAL TOXIC ORGANICS
         |
114  Antimony
115  Arsenic
117  Beryllium
118  Cadmium
119  Chromium
120  Copper
121  Cyanide
122  Lead
123  Mercury
124  Nickel
125  Selenium
126  Silver
127  Thallium
128  Zinc
     Fheriols
     Oil & Grease
     Totcil Suspended Solids
     Totcil Organic Carbon
     Biochemical Oxygen Demand
     Fluoride
Min. Cone.
rog/1
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
0.014
<0.01
<0.01
<0.01
0.007
Max. Cone.
mg/1
27.1
7.7
0.05
186.0
14.8
14.8
0.071
0.017
0.107
2.4
1.504
0.039
0.18
3.5
0.01
0.80
0.14
3.5
Mean Cone
mg/1
4.643
1.395
0.015
15.972
1.450
1.341
0.029
0.012
0.021
0.244
0.214
0.024
0.061
0.519
0.01
0.122
0.018
0.322
0.092
245.272
<0.001
<0.003
<0.001
<0.001
<0.001
<0.005
<0.005
<0.04
<0.001
0.005
<0.002
<0.001
<0.001
0.001
<0.002
ND
ND
ND
9
ND
0.187
0.067
<0.015
0.008
1.150
2.588
0.01
1.459
0.051
4.964
0.045
0.013
0.012
0.289
6.1
20.8
203
80
202
330
16.248

0.021
0.018
0.002
0.003
0.129
0.570
0.005
0.145
0.004
0.502
0.021
0.005
0.015
0.093
0.630
5.058
31.61
55.676
52.768
62.0
Flow Weighted
Mean Cone.
   mg/1

0.410
1.478
0.025
0.795
0.277
0.249
0.015
0.015
0.010
0.438
0.031
0.044
0.024
0.324
0.01
0.578
0.054
0.282

3.358

0.021
0.021
0.003
0.003
0.159
0.861
0.006
0.098
0.009
1.044
0.011
0.006
0.018
0.074
1.294
4.424
48.52
27.22
61.86
57.18
ND - not Idetected
                                        X-79

-------
Figure 10-5 presents total toxic organic concentration and
order of occurrence  („") for raw waste streams sampled in the
semiconductor subcategory.  There is a definite breakpoint in
this graph at 2.06 mg/1 of total toxic organics.  Those plants
which were observed  to have good solvent collection and disposal
procedures had total organic discharge concentrations of 2 mg/1
or less.  Some organic solvents and chemicals will be discharged
as dragout on the rinsed wafer; however, these dragout concen-
tration of organics  are minimal as evidenced by the low con-
centrations of total toxic organics discharged when effective
collection and disposal is used.  Those plants that were known
to have a less effective procedure for solvent collection and
disposal had total toxic organic concentrations of 4.5 mg/1
and greater.                                '

Table 10-17 presents data from individual process streams and
associated effluent  streams sampled at several semiconductor
facilities.  The process streams were selected at random to
characterize the pollutant parameters found!in each.  Concentrations
of total toxic organics in these streams range from <0.01 mg/1
to 0.105 mg/1.  The  effluent streams sampled at the same plants
for the same sampling period have total toxic organic concentra-
tions ranging from 1.613 mg/1 to 245.272 mg/1.  If total toxic
organic concentrations in the raw waste streams were caused by
dragout on the wafer and the carrier boat, the value for total
toxic organics in the individual rinses would be expected to be
much higher.  Since  this is not the case, toxic organics must be
entering the waste stream from other source? including direct
solvent and organic  chemicals discharge into the waste stream.

Rinse Water Control  - Since process rinse water comprises most of
the volume of discharge to the end-of-pipe Waste treatment system,
control techniques reduce process wastewater flow.  Rinse water
control techniques include:   .              j

          Countercurrent Rinsing - All of the twenty visited
          semiconductor facilities utilized two to four stage
          countercurrent rinses following process baths.  The
          countercurrent rinse is an overflowing rinse that
          requires much less water than a single overflowing
          rinse, yet provides equivalent removal of process
          chemical dragout from the wafer.  ;Many plants use
          an initial quench rinse r a single overflowing rinse -
          after all processes to remove the imajority of con-
          taminants  from the wafer prior to jthe countercurrent
          rinse.  The quench rinse removes high pollutant
          concentrations, and the following irinses provide
          additional cleaning.  Although the use of a single
          overflowing quench rinse requires !as much water as
          the subsequent rinse, the combination of the two is
          effective  in providing adequate wafer rinsing.
                               X-80

-------
^f ^3
fl .
9.0
8.0
7.0
M 6.0
01
c 5-°
o
•H
Concentrat
K> OJ *>
• • •
o o o
1.0
n
. '-^' *$.









1

o o











0 0











0 0










0 °









O
3










O






O
o











o








f
o
0

o









CM
O












0     10     20     30    40    50     60     70     80    90   100%
                    Order Of Occurrence %
                       FIGURE 10-5
          TOTAL ORGANICS RAW WASTE CONCENTRATION
                           X-81

-------
                      9
o
rr
o
CN
o
oo
r-
                                    r—
                                    in
                                    CN
1
I-l
fi






g
CT J^
fi£
4-1
c
tt)
3
rH
U-l
O
«*
O
CN
O



1-1
vo
o
r^
^*
CO
o




in
CN
in
o
rH
•
O




i-H
VO
                     a
s
I-l

9
                                               ^

                                               !
                                               P
                                               •a
                                                    X-82

-------
          Conductivity Controllers - The ultrapure water re-
          quired by the semiconductor industry for process
          use must be in the range of twelve to eighteen
          megohms of resistance.  This measurement of resistance
          reflects the presence of ions in the water.  As the
          conductance of the water increases the controller
          allows ultrapure water into the rinse until the de-
          sired resistivity level of the water is reached.  At
          this point, the water flow stops until the conductivity
          controller senses another increase in the conductance.
          These conductivity controllers minimize the amount
          of make-up water added and provide high purity water
          for semiconductor wafer rinsing and were used at
          every visited plant.

          Flow Restrictors - Flow restrictors are mechanical de-
          vices used in the incoming water line to deliver a con-
          stant supply of rinse water regardless of pressure
          drops.  For example, a rinse that requires one liter of
          water per minute will be regulated at that rate with
          the flow restrictor.  Flow restrictors were used
          at two visited plants.

          Rinse Water Recycle - Three of the plants sampled
          return process rinse water to the ultrapure water pro-
          duction area for reuse.  As much as 50-80% of the total
          process water used is reused in these plants.   (Plant
          06143 recycles approximately 47% (43,214 liters/hr),
          plant 35035 recycles approximately 59% (6,865 liters/
          hr), and plant 42044 recycles up to 85% (34,505 liters/
          hr)).  Plants 06143 and 35035 are using a process
          wastewater reuse system that discharges only the quench
          rinse to the waste treatment system and returns all of
          the rinse water for reuse.  Plant 42044 reuses  the quench
          rinse as well..  The pollutant parameters present in the
     1     reused process wastewater are removed in the deionized
          water production area.  When the components of  deionized
     .;     water production are backwashed and regenerated, the
          pollutants from reused rinse water and from supply water
          are sent to the waste treatment area for treatment
     I     prior to discharge.  This reuse conserves water, con-
     '     centrates the pollutants, and decreases wastewater
          discharge.  All of these factors contribute to  the
          cost effectiveness of the end-of-pipe treatment process.
     ,1 •                                                '
Good Housekeeping - Based upon observations made at visited faci-
lities where good housekeeping procedures were evident, good
housekeeping and maintenance reduces wastewater discharge to the
treatment system.  Pumps, filters, and water pipes are periodically
                               X-83

-------
 inspected to insure proper operation.  Solvents, organic strippers,
 and developers are disposed of properly to prevent discharge to the
 waste treatment system.  Disposal procedures have been developed
 and closely supervised to insure employee adherence.  Chemical
 storage areas are kept clean, uncluttered, and well lit to con-
 trol accidental spills and leaks.  Good housekeeping practices
 for chemical storage include collection and treatment for solvent
 and acid spills.  Good housekeeping procedures and solvent dis-
 posal procedures were observed at visited facilities.
                                            I
 End-of-Pipe Treatment - All twenty of the visited plants adjust
 the pH of process wastewater prior to discharge.  Of the twenty
 plants, six discharge the treated effluent to the surface and
 fourteen discharge to municipal treatment facilities.  Table 10-18
 summarizes treatment in-place and discharge destination of the
 twenty plants visited during this study.    ;

 All of the twelve sampled plants utilize  a pH adjust system to
 treat process wastewater prior to discharge.  Lime is used most
 frequently, and ammonia and sodium hydroxide are also used.  This
 pH  adjustment is necessary since process  wastewater from semi-
 conductor manufacturing typically has a pH of 2-3.  The follow-
 ing plants perform only pH adjustment of  the wastewater prior to
 discharge:  02040, 02347, 04294, 04296, 061^3, 35035, 41061, 42044.
 Analysis results from effluent streams sampjLed at these plants are
 presented in Tables 10-4 through 10-15.    |

 Pour of the plants sampled use chemical precipitation and sedimen-
 tation in a clarifier with flocculant addition to assist in set-
 tling suspended solids.   The four plants  are 30167, 36133, 36135,
 36136.  Analysis data from these plants are:also presented in
 Tables 10-4 through 10-15.                 !

 Plants 30167 and 36133 also utilize  a fluoride treatment system
 to  treat high concentrations of fluoride  from hydrofluoric acid
 etching.   The fluoride wastes  are adjusted with  lime to a pH
 of  11 causing free fluoride ions to  bond  with calcium and settle
 out  of solution.   Sulfuric acid is then used to  readjust the
 pH  to 7.5,  and  polyelectrolytic flocculant |s used to settle the
 solids more  rapidly.   The decanted water  is!discharged to the
 waste treatment system for further treatment prior to discharge,
 and  the  sludge  is  dewatered in a vacuum filtration unit and col-
 lected for  contractor removal.   In Plant  36133 further treatment
 of  the decant is  required,  because ammonia from  the buffered
 hydrofluoric  acid  etchant is  released after  fluoride treat-
ment.  This  facility  is  pumping the  treated  fluoride decant
 stream to  its cyanide treatment tank for  ammonia  and cyanide des-
 truction  before  further  treatment.   Cyanides in  this facility
 are  from  electroplating  operations and  are  therefore covered
 under the  Metal  Finishing Category.   Effluent data of  samples
 collected  from  the  fluoride  raw waste and  effluent streams  from
plants 30167  and  36133 are  listed  in  Table  10-19.
                                X-84

-------
                    TABLE 10-18
             SEMICONOJCTOR SUBCATEQORY
SUMMARY OP WASTEWATER TREATMENT AT VISITED FACILITIES
                                           DISCHARGE DESTINATION
PLANT I
02040
02347
04152
04213
04249
04290
04291
04292
04294
04296
06143
19100
19101
30167
35035
36133
36135
36136
41061
42044
D - Di]
I - In<

D NO. TREATMENT IN-PLACE
pH adjust
pH adjust
pH adjust
pH adjust, settling
pH adjust
pH adjust
pH adjust
pH adjust
pH adjust
pH adjust
pH adjust, recycle (47%)
pH adjust
Chemical precipitation,
recycle (66-75%)
Chemical precipitation,
fluoride treatment
pH adjust, recycle (59%)
Chemical precipitation,
fluoride treatment
Chemical precipitation
Chemical precipitation
pH adjust
pH adjust, recycle
(up to 85%)
:ectly to surface water
airectly to surface waters through municipal
X-85
(D-DIRECT; I-INDIRECT)
I
I
I
I
I
I
I
I
I
I
D
I
I
D
D
D
D
D
I
I
treatment


-------
                            TABLE 10-19                  I
                                                         [
                                                         I

          ACTUAL PERFORMANCE OF FLUORIDE TREATMENT SYSTEMS
                         Plant 36133  MaanJ
                            Cone,  (mg/1)
                                               Plant 30167^
                                               Cone, (mg/1)
                            In
                          1049*
Parameter
Plow (1/hr)

Arsenic
Cadmium
Chromium
Copper
Lead
Mercury
Nickel
Selenium
Silver
Thallium
Zinc
Total Suspended Solids  4150
Fluoride                38750
  Out
1049*
   In
22583
0.087
<0.003
217.16
2.41
00.075
0.0025
0.145
0.007
0.02
<0.03
0.11
0.042
<0.003
0.39
0.11
0.065
0.007
0.2
<0.005
0.018
<0.03
0.218
<0.01
0.004
22.8
2.2
5.35
<0.001
0.69
<0.005
0.024
0.005
<0.01
                                  747.3
                                   24.3
          5.6
         760.0
   Out
 22583

 <0.01
 <0.001
 0.055
 0.145
 OiOOS
 <0.001
 0:06,5
 0.005
X0.01
 0.012
 <0.01

 7l.O
 37.0
*  This is total flow  in liters/hour for 3 streams sampled.
                                                         i

"These values are means because these streams were sampled over
 3 different sampling periods.  (See Table 10-11)        j

"These are single stream values.   (See TafcjLe 10-9)       |

Note:  The "in" streams are not total raw waste  streams  and  thus
       cannot be compared with values in summary of raw  waste data.
                                          X-86

-------
Plant 36135 does not have specific treatment for fluoride-contain-
ing wastewater.  This facility collects all of the spent hydro-
fluoric acid solutions for contractor removal.  The fluoride
from rinsing operations is at very low concentrations and re-
quires no further treatment other than chemical precipitation
and sedimentation in a clarifier.

The effluent analysis results in Tables 10-4 through 10-15 show
decreased concentrations of fluoride, metals, and suspended solids
when fluoride treatment, chemical precipitation, and sedimenta-
tion are used as treatment techniques.  Those plants that only
adjust the pH prior to discharge show higher concentrations
of fluoride, metals and suspended solids in the effluent stream
than similar effluent streams from clarifier treatment systems.
Concentrations of toxic organics are also high (>1.0 mg/1) in
the effluent of plants 04294 and 04296, which only pH adjust.  Si-
milar organics are found at lower concentrations (<0.01 mg/1) at
other sampled plants where clarification is used.

POTENTIAL POLLUTANT PARAMETERS

There are twenty-three pollutants present in the wastewater pro-
duced by the semiconductor industry that are at concentrations
that might require treatment prior to discharge.  The potential
pollutants are:

           8  1,2,4-trichlorobenzene
          11  1,1,1-trichloroethane
          23  Chloroform
          25  1,2-dichlorobenzene
          26  1,3-dichlorobenzene
          27  1,4-dichlorobenzene
          44  Methylene Chloride
          55  Naphthalene
          58  4-nitrophenol
          65  Phenol
          69  Di-n-octyl Phthalate
          85  Tetrachloroethylene
          86  Toluene
          87  Trichloroethylene
         115  Arsenic
         119  Chromium
         120  Copper
         122  Lead
         124  Nickel
         128  Zinc
              Oil & Grease
              Total Suspended Solids
              Fluorides
                               X-87

-------
 Table 10-20 lists pollutants (other than the twenty-three potential
 pollutant parameters listed above)  that were analyzed for in the
 raw waste streams sampled for the semiconductor subcategory.
 Each pollutant is listed in the appropriate grouping as being not
 detected, detected at trace levels, or detected at levels too low
 to be effectively treated prior to  discharge.

 APPLICABLE TREATMENT TECHNOLOGIES          i

 Based on  the potential pollutant parameters presented above and
 treatment in-place in the semiconductor industry,  the following
 technologies are  applicable for treatment of wastewaters from
 this subcategory:                          \

           Chemical precipitation and sedimentation in a dlarifier
           Fluoride treatment               !
           Arsenic treatment                •
           Solvent collection               j

 Chemical  precipitation and sedimentation in a clarifier is  discussed
 in  detail in Section XII of this report.  Fluoride and arsenic
 treatment and solvent collection have been Discussed previously
 in  this section.                            i
                                            i

 Recommended  Treatment Systems               '<

 Three  levels of wastewater treatment are recommended for the semi-
 conductor industry,  each providing  increased control of pollutant
 discharge.   The following paragraphs describe each of the three
 levels of treatment.

 Level  1 Treatment (Reference Figure  10-6)  -, Level  1 treatment  consits
 of  the following:
                                            i
           Solvent collection and  contractor' removal
      .     Wet air scrubber water  recycle,  concentrated
           wastes  bleed-off to waste  treatment
           Fluoride  treatment for  concentrated fluoride
           streams                           \
           Arsenic  treatment  (if  applicable);
           Dilute  acid  waste  treated  by  chemical precipita-
           tion with  lime,  coagulant  addition,  sedimentation
           in  a clarifer                     •
           Sludge  dewatering                 I
                                            I
Level 2 Treatment  (Reference Figure  10-7)  -; Level  2 treatment  con-
sists of  all  of the  components of Level  1  treatment including  the
following additions or revisions:           i
                               X-88

-------
                                          TABLE 10-20

                               ANALYZED POLLUTANT PARAMETERS
                               NOT DETECTED IN RAW WASTE STREAMS
 1. Acenaphthene
 2. Acrolein
 3. Acrylonitrile
 5. Benzidine  •[.
 6. Carbon Tetrachloride(Tetrachloromethane)
 9. Hexachlorbenzene
10. 1,2-Dichlorethane
12. Hexachloroethane
14. 1,12-Trichlroethane
15. 1,1,2,2-Tetrachloroethane
16. Chloroethanfe
17. Bis (Chloroirethyl) Ether
18. Bis(2-Chloroethyl)Ether
19. 2-Chloroethyl Vinyl Ether(Mixed)
20. 2-Chloronaphthalene
21. 2,4,6-Trichlorophenol
22. Parachloroneta Cresol
28. 3,3'-Dichlorobenzidine
30. 1,2-Trans-Dichloroethylene
32. 1,2-Dichloropropane
33. 1,2-Dichloropropylene(1,3-DichloroprOpene)
34. 2,4-Dimethylphenol
35. 2,4-Dinitrcitoluene
36. 2,6-Dinitrotoluene
40. 4-ChlorophenylPhynyl Ether
41. 4-BromophenylPhenyl Ether
42. Bis(2-Chloroisopropyl)Ether
43. Bis(2-Chlroethoxy)Methane
45. Methyl Chloride(Chloroinethane)
46. Methylbromi.de  (Brononethane)
47. Bromoform  (Tribrornomethane)
48. Dichlorobromomethane
49. Trichlorofluoromethane
50. Dichlorodifluoromethane
52. Hexachlorobutadiene
53. Hexachlorooyclopentadiene
54. Isophorone
56. Nitrobenzene
59. 2,4-Dinitrophenol
60. 4,6-Dinitro-o-cresol
61. N-Nitrosod:Lmethylamine
62. N-Nitrosodlphenylamine
63. N-Nitrosod:L-N-Propylamine
64.
71.
72.
73.
74.
75.
76.
77.
78.
79.
80.
81.
82.
83.
84.
88.
89
90.
91.
92.
93.
94.
95.
96.
97.
98.
 99.
100.
101.
102.
103.
104.
105.
106.
107.
108.
109.
110.
111.
112.
113.
129.
Pentachlorophenol
Dimethyl Phthalate
1,2-Benzanthracene(Benzo(A)Anthracene)
Benzo(A)Pyrene (3,4-Benzo-Pyrene)
3,4-Benzofluoranthene(Benzo(B)Fluoranthene)
11,12-Benzofluoranthene(Benzo(K)Fluoranthene)
Chrysene
Acenaphthylene
Anthracene
1,12-Benzoperylene (Benzo ((MI) -Perylene)
Fluorene
Phenanthrene
1,2,5,6-Dibenzathracene(Dibenzo(A,H)Anthracen
Indeno(1,2,3-DC)Pyrene(2,3-o-PhenylenePyrene)
Pyrene
Vinyl Chloride (Chloroethylene)
Aldrin
Dieldrin
Chlordane(Technical Mixture and Metabolites)
4,4'-DDT
4,4'-DDE(PPP'-DDX)
4,4'-DDD(PfP'-TDE)
Alpha-Endosulfan
Beta-Endosulfan
Endosulfan Sulfate
Endrin
Endrin Aldehyde
Heptachlor
HeptachlorEpoxice(BHC=Hexachlorocyclohexane)
Alpha-BHC
Beta-BHC
Gamma-BHC(Lindane)
Delta-BHC(PDB-Polychlorinated Biphenyls)
PCB-1241(Arochlor  1242)
PCB-1254(Arochlor  1254)
PCB-1221(Arochlor  1221)
PCB-1332(Arochlor  1232)
PCB-1248(Arochlor  1248)
PCB-1260(Arpchlor  1260)
PCB-1016(Arochlor  1016)
Toxaphene
2,,3,7,8-Tetrachlorodebenzo-P-Dioxin(TCDD)
Xylenes
Alkyl  Epoxides
                                                  X-89

-------
                            10-20 CON'T            ;

   PARAMETERS DETECTED IN RAW WASTE STREAMS AT TRACE LEVELS
   4 Benzene
   7 Chlorobenzene
  24 2-Chlorobenzene
  37 1,2-Diphenylhydrazine
  38 Pluoranthene
  66 Bis (2-Ethyimexyl) Phthalate
  67 Butylbenzyl Phthalate
  68 Di-n-butyl Phthalate
  70 Diethyl Phthalate
 PARAMETERS DETECTED IN RAW WASTE STREAMS AT LEVELS'TOO LOW TO REQUIRE TREATMENT*
                              (REFERENCE TABLE 10-16)
Parameter

 29 1,1-Dichloroethylene
 31 2.4-Dichlorphenol
 38 Ethylbenzene
 57 2-Nitrophenol
114 Antimony
117 Beryllium
118 Cadmium
123 Mercury
125 Selenium
126 Silver
127 Thallium
121 Cyanide
    TOG
    BOD
Mean Concentration

     1  0.029
     |  0.012
     i  0.021
     !  0.024
     !  0.021
       0.002
     ;  0.003
     !  0.004
     i  0.021
     i  0.005
       0.015
       0.005
     !  55.676
     :  52.768
* These parameters do not require treatment because 1) the raw waste concen-
  tration is less than the daily maximum figures for applicable treatment or
  2) no performance data is available for treatment of this parameter.
                                  X-90

-------
                                     COAGULANT
                                      ADDITION
                      U1ME
   D1UUTE ACID
   ;  WASTE  ~~
 GOIMCE NT RATED
FLUORIDE WASTE
 CONCENTRATED

ARSENIC WASTE

(IF APPLICABLE)
 PH ADJUST
EFFLUENT
DISCHARGE
 CLARIFY
  CLARIFY
                                              RETURN TO
                                              PH ADJUST
                             CONTRACTOR
                               REMOVAL
                                SLUDGE
   FLAMMABLE
   |SOLVENTS
   CHLORINATED
   ' SOLVENTS
 SOLVENT

COLLECTION
  SOLVENT

COLLECTION
                                           CONTRACTOR
                                             REMOVAL
                                             SOLVENTS
                            FIGURE 10-6

              SEMICONDUCTOR LEVEL ! TREATMENT
                                X-91

-------
  DILUTE ACID
     WASTE
                RETURN TO pi WATER
            ' PRODUCTION AREA, FOR REUSE
 CONCENTRATED

 FLUORIDE WASTE
 CONCENTRATED
ARSENIC WASTES
 (IF APPLICABLE)
  CHLORINATED
   SOLVENTS
   FLAMMABLE
   SOLVENTS ~
 SOLVENT

COLLECTION
                                            SLUDGE

                                           DEW ATE R
                          T
                       CONTRACTOR
                       "REMOVAL'
                         SLUDGE
                                        FILTRATE'
                                       "DISCHARGE
                                          CONTRACTOR
                                            REMOVAL
                                            SOLVENT
                           FIGURE 10-7     I

             SEMICONDUCTOR LEVEL  2 TREATMENT
                             X-92

-------
      .  !  Recycle of dilute acid wastewater  to  DI  water  production
      .  !  Solvent collection  and segregation for reclaim and
        |  resale

 Level  3  Treatment  (Reference  Figure  10-8)  -  Level  3  treatment  con-
 sists  of all  of the components  of  Level  2  treatment  including  the
 following additions and  revisions:

      .  I  Carbon adsorption column to treat  wastewater from
        i  the sludge dewatering unit prior to discharge

 Solvents are  completely  segregated and reclaimed for resale or
 reuse  by other industries.

 Performance of In-Place  Treatment  Systems

 The  actual performance of Level 1  treatment  systems  that have
 been sampled  for the semiconductor subcategory is  presented in
 Table  10-19  (shown  previously)  and Table 10-21. Table 10-19
 presents mean concentrations  from  two sampled facilities uti-
 lizing a concentrated  fluoride/heavy metals  treatment system
 as described  previously.  Table 10-21 shows  minimum, maximum,
 and  flow weighted mean concentrations of pollutants  from those
 semiconductor facilities utilizing chemical  precipitation and
 sedimentation as waste treatment  technologies.  Data from in-
 dividual effluent  streams utilized in the formation  of these
 tables were  presented  in Tables 10-4 through 10-15.

 Performance  of Recommended Treatment Systems

 Performance  of the  recommended treatment systems is  shown in
 Table 10-22.   These performance figures are based  upon data from
• treatment performance  observed both in the E & EC  industry and in
 other industries.   Performance from other industries can be trans-
 ferred to the semiconductor industry because of the similarity of
 the  raw wastes.  Section XII describes the treatment and the per-
 formance levels achievable by each component.
        I
 The  Total Toxic Organic  concentration shown in Table 10-22 is the
 mean concentration of  plants having TTO less than 2.06 mg/1 in the
 raw waste streams  sampled for the semiconductor subcategory.  All
 other performance  data are transferred from the Metal Finishing
 Category and other industries as  discussed  in Section XII.

 Level i treatment is a basic treatment system whose components., ex-
 cluding arsenic treatment, are presently  in use and have been ob-
 served" at sampled facilities.
                                 X-93

-------
   DILUTE
     WASTE
                     RETURN TO Dl WATER
                  PRODUCTION AREA FOR REUSE
 CONCENTRATED
FLUORI DE WASTE"
  CLARIFY
 CONCENTRATED
 ARSENIC WASTE"
  CLARIFY
CONTRACTOR
 REMOVAL.
  SLUDGE
                                                         CARBON

                                                       ADSORPTION
                                                   "DISCHARGE
   CHLORINATED
    SOLVENTS"™
  SOLVENT

COLECTION
   FLAMMABLE
    SOLVENTS
  SOLVENT

COLLECTION
                                          CONTRACTOR
                                            REMOVAL

                                           SOLVENTS
                                FIGURE tO-8
                  SEMICONDUCTOR  LEVEL 3 TREATMENT
                                   X-94

-------
                             TABLE 10-21

             ACTUAL PERFORMANCE OF CHEMICAL PRECIPITATION
                          AMD SEDIMENTATION
         Parameter               Min. Cone./    Max.  Cone*       Mean Cone.
                                   mg/1  /      mg/1           mg/1

  8 1,2,4-Trichlorobenzene        <0.01          <0.01          <0.01
 11 1,1,1-Trichloroethane         <0.01            .013          0.005
 23 Chloroform                    <0.01           0.02           0.013
 24 2-Chlorophenol                <0.01          <0.01          <0.01
 25 1,2-Dichlorobenzene           <0.01          <0.01          <0.01
 26 1,3-Dichlorobenzene           <0.01          <0.01          <0.01
 27 1,4-Dichlorobenzene           <0.01          <0.01          <0.01
 44 Methylene Chloride            <0.01           0.049          0.03
 55 Naphthalene                   <0.01          <0.01          <0.01
 58 4-Mitrophenol                 <0.01          <0.01          <0.01
 65 Ihenol                        <0.01          <0.01          <0.01
 69 Di-n-octyl phthalate          <0.01          <0.01          <0.01
 85 Tetrachloroethylene           <0.01          <0.01          <0.01
 86 Toluene                       <0.01          <0.01          <0.01
 87 Trichloroethylene             <0.01          <0.052          0.024

Total Toxic Organics               0..058          0.231          0.106

115 Arsenic                       <0.003          0.005          0.004
119 Chromium                       0.019          0.059          0.04
120 Copper                         0.03           0.134          0.061
122 Lead                           0.082          0.102          0.077
124 Nickel                         0.520          0.844          0.541
128 Zinc                           0-022          0.040          0.027
    Oil & Grease                   2.4            17.4           6.46
    Total Suspended Solids        <1.0            60.0           23.8
    Fluoride                       5.42           17.50          16.1
                                       X-95

-------
           *b




          S
                                                              - ro
                                                               CNI



                                                                       1-11— in
                                                                       iH rH rH
                                                                       in ro
                                                                       rH CN i
                                                           i • •
                                                           CN O
                                                                            *

                                                                         [— ID
                                                                         i—I rH
:S
           '

                                                       I  I o o CN I
          as
                                                         I VO rH t- I
           s
8
                    ««««««*«««««««
                                      Sf
                                  rd  -a tJ
                            5 o
                          ! - iH
                          i Q Q '
                                               o
                          IrH   M

                          ! -C   >S
                                                      rH ru C
                                                                 S1
                                                                               it!
                                                                                 &
                                                                              M I
                                          X-96

-------
Level 2 treatment technologies have been discussed previously in
this section.  All of the technologies in Level 2 treatment are
presently in use and have been observed at sampled facilities.

The Level 3 treatment system is not currently in-place in any of
the semiconductor facilities contacted in this study.  This system
is designed to increase the efficiency of the Level 2 system by
decreasing the amount of Total Toxic Organics being discharged.
Other parameters will remain largely unchanged.

Table 10-23 compares performance of observed and recommended treat-
ment for: the semiconductor subcategory.  This comparison supports
the transfer of performance data as evidenced by the similarity
in effluent characteristics between these streams.  Only Level 1
treatment performance is compared in Table 10-23 because Level 2
performance is the same as Level 1 with only a reduction in flow
rate, and Level 3 treatment is not in place at any of the semi-
conductor facilities sampled as stated above.

Estimated Cost of Recommended Treatment Systems

The cost estimation methodology of recommended treatment system
components is discussed in Section XIII of this report.  Tables
10-24 through 10-32 show estimated costs for each of the recom-
mended treatment systems discussed previously*  Costs have
been estimated for level 1 treatment and for level 2 and
3 treatment for three different flow rates to present the
variation in system costs resulting from changes in system flow
rates.  The three flow rates are characteristic of small, medium,
and large semiconductor facilities.

These costs do not reflect treatment already in-place in the
semiconductor subcategory that are designed to treat semiconduc-
tor wastes exclusively.  Similarly, these costs may be misleading
because they do not account for mixing wastewaters from semicon-
ductor manufacturing with wastewaters from other manufacturing
processes (such as electroplating) for treatment in existing
wastewater treatment facilities.

BENEFIT ANALYSIS

This section presents an analysis of the industry-wide benefit
estimated to result from applying the three levels of treatment
previously discussed in this section to the total process waste-
water generated by the semiconductor subcategory.  This analysis
estimates the total amount of pollutants that would not be dis-
charged to the environment if each of the three levels of treat-
ment were applied on a subcategory-wide basis.  An analysis of
the benefit versus estimated subcategory-wide cost for each of
the treatment levels is also provided.
                                   X-97

-------
                                 TABLE 10-23

                          SEMICONDUCTOR SUBCATEGORY
          COMPARISON OP OBSERVED AND RECOMMENDED TREATMENT SYSTEMS
 PARAMETER

   8 1,2,4-Trichlorobenzene
  11 1,1,1-Trichloroethane
  23 Chloroform
  25 1,2-Dichlorobenzene
  26 1,3-Dichlorobenzene
  27 1,4-Dichlorobenzene
  44 Methylene Chloride
  55 Napthalene
  58 4-Nitrophenol
  65 Phenol
  69 Di-n-octyl Phthalate
  85 Tetrachloroethylene
  86 Toluene
  87 Trichloroethylene

TOTAL TOXIC  ORGANICS

115 Arsenic
119 Chromium
120 Copper
122 Lead
124 Nickel
128 Zinc

     Oil & Grease
     Total Suspended Solids
     Fluorides
OBSERVED TREATMENT1
__ mg/1
RECOMMENDED LEVEL 1 TREATMENT2
_ _ mg/1
        *
        *
        *

     0.815**

     0.004
     0.040
     0.061
     0.077
     0.541
     0.027

     6.46
    23.8
    16.1
   ference Table 10-21

Tteference Table 10-22

*Included in Total Toxic Organics figures
             *
             *
             *
             *
             *
             *
             *
             *
             *
             *
          0.815**

          0.021
          0.159
          0.814
          0.050
          0.942
          0.074

          4.424
         17.8
         15.3
                         concentration from plants having TTO less
 than 2.06 mg/1 in raw waste streams.
                                            X-98

-------


CN
1
O
r-i
p-j
CQ
EH



C£
SUBCATEGO:
«
o
[CONDUCT
m
S
Ed
CQ
CQ
EH
CQ
O
CJ
TREATMENT

!b
EFFLUEN
Ed
£"J


REATMENT
EH

LEVEL 1


END-OF-PIPE
SYSTEM COST
 o
 in
 m
o
o
CO
o
             CN
             l£>
             m
              «
             in
             r»
             CN
             cy>
             vo
             n
       CN
       vo
       in
        0
       in
       00
CN
VO
O
 •
in
in
oo
PO
r--
                                          in
                                          ro
                                          CN
                                          CN
                                                 CN
                            r-
                            CN
                            oo
                            01
                                                         oo
                                                         o
                                                         in
DB

CQ
EH
M
Q

O

 I
§

EL,

S
Ed
EH
CO

CO
            EH
            Z
            Ed

            £
            CO
            Ed
            M
EH
CO

8
                     D











CQ
EH
CQ
0
CJ

t_3
f£
EH
M
P-i
H
O

Ed
Z
Ed
                                                         CQ
                                                         EH
                                                         CO

                                                         8
                                                         Z
                                                         Z
                       EH
                       O
                       EH
                                  X-99

-------
        CQ
        EH
        en
CM
 I
    CJ EH  S
       rfj EH
O  CQ OH Cd
eo  o w
EH  Q
    o fa
    o Ed

    s ctf
    BJ g
    CQ EH
       J EJ
       fa >
a EH
o< ca
w O
04 O
                         CQ
                         >H
                         CQ
                                             m
                                              •
                                             o
                       in
                       N
                       CO
                                                            00
                                 CO
                                 ^
                                 vo
OJ
vo
                                                                 CM
                                                                 o
                                                                 in
                                                                 in
m
r~
co
 •
vo
in
oo
              vo
              oo
              in
              oo
              ro
              CM
CM

iH
00
                                                                                         co
                                                                                         CM
                                                                                         VO
                                 CQ
                                 Ot
                                 si
                                 cu
                                                                          CQ
                                                                          O
                                                                       CQ CJ


                                                                       CQ OS
                                                                       O H
                                                                          CU
                                                                 CQ    a
                                                                       EH X
                                                                       s q
                                                                       M OH
                                                                               CQ
                                                                               EH
                                                                               -CQ
                                                                                        CQ
                                                                                        EH
                                                                                        CQ
                                 Ed


                                 I
                                 CQ
                                 »
                                 CQ
                                            S
                                            Ixl
                                            S
                                            EH
                                            CQ
                                            Ci]
                                                     CQ

                                                     8
                                                           CQ
                                                           EH
                                                           CQ
                                                           O
                                                           CJ
                                                                 in
                                           M
                                           o
                                                    w

                                                    O
                                                                          M    :Q
                                                                       EHCJ

                                                                       05 Ed
                                                                       Ed ""
             12

                                                                       X-100

-------
       CQ
       CO
       8
    o
    o
    ej  Cd 2!
vo  §  S Cd
CN  cj  EH S,;
    g
    CO

    «;
    o
   DC!
       Ed
       D
Cd EH
04 CO
M O
ft O

b S
O W
 I  EH
Q CO
"Z X
ca CQ
                           vo
                           o
                            •
                           in
                           t-»
                           ro
                           
                           CO
O
 •


CTl


•H
00
                                                     00
                                                     •^
                                                     vo
in
t~-
ro
 •
00

CM
vo
r«
CN
    2
    o
    o
ca
   a
            o\
            in
            ao
            r-
    i M
    CQ g
       S
CN

•«!J*
                                                                          00
ro
en
vo
o
in
o
cs
                                  Cd
                                  EH
                                  Cd
                                  1
                                  Cb
                                  ca
                                  EH
                                  CQ
                                  X
                                  CQ
                                       Cd

                                       s
                                       CQ
                                       Cd











EH
CQ
O
CJ

ij
rtJ
D
2








CQ
•EH
CQ
O
CJ

(J
rij
EH
M
04
rtj
CJ

CQ
OS
^J
Cd
X

in
>
O
M
EH

M
CJ
Cd -
«
04
Cd
Q
EH
CQ
O
CQ O
CQ &
O Cd
°B
Cd 04
^Q
$3
Cd
EH fn
2 O
M 05
< Cd
S 2
Cd
Q
2 CJ
*3« 2
M
O Q
2 0
M J
EHCJ

K Cd
Cd ""^^
04
O
CQ
EH
CQ
O
CJ

(£
Cd
S
S

Q
2


X
O
04
Cd
2
Cd
COSTS

J
<
D
2
2
<
J
|rf
EH
O
EH







                                                                     X-101

-------
    o
    00
a
Ed

i
CO
                               ca
                               o
                               vo
                        vo
                        in
                                                , en
                                                 VO
                                    CM
                                    r-
                                                                     tn
                                                                     CO
                            (N

                            O
                                                              oa
                                                              
-------
e
CO
VO
o
a
ea

I
       VO
       O
                  vo
                  *•»
                  09
    as
    n
    CN
    _i
    vo
  on  in
  in  ^
  s  a
                                       vo
                                         •

                                       VO
                                        r-
                                        ro
I
                        o
                        a
                                   o   o
                                   VO   O
                                   <"? .  VO
                            o   o
                            CM   O
                            -i   in
                     ao
                     to
                     90
   »?
   O 6*
   u ia
   & :e
   <•£->£••
   U «S Z
    - caca
     ess



111*
£  Id"
03

? i
2 S
63 fr*
a. cn
M O
a. cj


u ca
                 in
                 r-
                 in
                 in
                 ts
                 a
                 o
                                 cn
                                 -H
                                 00
                                 r»
                                 01
                  CO
                  o   r-
                   •    •
                  VO   CO
                  in   n
                  •a-   vo
                  e*i   in
                  M   in
           en
           o
           03
                                                  in
                                                  en
             VO
             in
             oo
                 as
OSTS
ER COSTS
in
o
eo
CM
en
                 &•
                 j

                 a
                 a
                 o
                 u

                 I
1
 u
                      cn

                      <
                          u i
                          u
                                       JM   rf (
              I
              j
              =>
                  &•   z
                  ca   o
                  8   £
a.
4
o
os w
Cd ~>
04
o
               8

               1
               a:
         a     o
         il   *

         gi   I
                                                  x

                                                  cs
                     01
                     E*
             J
             <

             Z
             J
             <
                                        X-103

-------
 03


 >
 o


 *o
 o
 a


 I
 w
E-i

§
CJ

>J
<
                                  o\
                                  CO
                                  to
                                  r—
                                             CO
                                             o
                                             CM
                                             a
                                             *r
                                                 in
                                                 a\
 o

 H
E*
en
O
o


3
CJ
X
o

g
                         a
                         o
                         in
                                                 O
                                                 o
                                                       o
                                                       CM
                                                   o
                                                   a
                                                                  in

                                                                  F-(

                                                                 1 CM
en
CM
     CO
     c*

     S3

   S8


   8*
   M Z
   S Cd

   S's  ,
   CJ gjg
   CQ i$ 5&


s«||


Cd  §&4M
•1  gl ZK
en  o a E<
<  3 S
6*  Q JCM
     §Cu
     Cb -J
   U ca ca

   S«ca
   £ ca j

   w g

     S
          ca EH
          O4 CO
          M O
          a, o
         O ca
          i  f
         a ca

         u en
i     i
^*     CO
       to
       «
o     ""
o
o
vo
en
vo
                                            ai
                                            a\
                                            in
                                                 CO
                                                 t-
                                                 in
                                                 CO
                                                         to
                                                         rr-
                                   a
VO
o
co
CM
at
                  §
                  ca
                  a
                  Oi
                  cs
                 1
                 Cu
                 en












01
01








01
C£

»
in
^-
O
oi a:
o ca
CJ S
Hg
CJ
Z Q
< Z
z <:

z u
HI a
g ca
a
•4 Z






01

0]
8

c:
i
§

j
|

01
EH




J
<
3
2
s
u
'i^j
                                            8   g
                                  w   Q
                                 i a   —
                                 ; a
                        s
                                       <4!   fl4   A*
                                       3   <   ca
                                       z   u   a
                                Cd —
                                a
                                O
                                                  X
                                                  C5
                                       X-104

-------
o
CO
IV.
o
\
,!
' •*
Q
1 u
03
! Z
ta


1
o
j
rf
i"
*^
r-4
m
CM
• ca
CM
**




f! CP»
O CM
CM 0
oo m . ,
C*} ' vO
CM m





in '
00.
CM
en
CM
in





CM
•
f-H
en
CM



I Ir.
i -8
I 0
1 "• .-.is
j •: U

I ' - U
I : «




f
o .
o
en




r-'
•
CO
in
t~




»
o
0
CO
1-1





• •
0 0
VO O
m —<
ca
 ro  03
  I  3
•O  W
 J  EM M
 03  U i—
 <  a j
 &•  a £
03 £-t
o. en
M O
04 U

Cu £
o u


is
ca en
                           03
                           o
                           o
                           o
•v
 a

•*
r-t
m


r-
CM
         r-
         o
         co
         CM
         en
                            Oi
                            OS
                            a
                            cu
                            u
                            03


                            I
           a

           fi
           en
                                    E-i
                                    Z
                                        z

IO <^
r4 M
^ ' O
; a f^*

CM m












2

iyi
X

in
en x.
S-> z
en O
^ 8 |
w «fi

t_J M OS
< a. a,
O rtl U
z u a
m
en
co

in
CM
in
W
&•
en
O
w o
M
en en
o S
ia §
oj
<: z

g SM

1H Of


U
TING AND
ICLODING
<: K

ca ^.
cu
O

CM'

^-i

CO
(S










en

en
O
o

sn
03
Z
2
a
>>

K

z

in
^
en
fH
<^»
. <*1
i— {








en
&•
§
u
j

3


4J
TOTAL





                                                          X-105

-------
  a

  5
  I
  o
a

I
u
§
u
j
                               03
                               O
                               00
                               
<•   CR
in   -i
VO   r-l
                                                      VO
                                                      O
                                                      r-
                                                      rH
                                                      in
                                                      03
09
o
09
CM
ITERS/HR)
>j
«i^
a
o
i
1
g
§ 1
Ou U
s fi
&« U






1
o
J
a




ca
&•
u9
CAPITA


2
3
X
in
V.
§
M
§
M
DEPREC
1
gu
§a:
y|
m cu
z o
li
g>,
g§
< a
?s
5i
M
i§
t^ kj
OPERAT
(EXC


1
o
QS
S
o
5
1
S

•J
<
<
J
g


                     w
                                                     X-106

-------
          o
          00
          vo
          o
          a
          ca

          I
          CM
          VO
          O)
vo
o
                     CM
                     on
                     *r
                     CM
                     in
                     CM
CM    ci
vo     •
vo    aa
vo    .-I
es    n
c-    CM
CM    in
                             a\
                             r-
                             vo
          ca
          C3
                                          o
                                          o
                                          o
                                          a
                                          in
                        o
                         •    o
                              o
                              o
                        CM    O
in
               o
               o
               o
               CM
                                             a
                                             r-
                                            o

                                            tn
                                            •H
                                            CM
                                            m
                                            r-
8
                     ta e-i
                     a. ca
                     Ot (J
                     o ca
                      I  £*
                     a ca
                     Z X
                     a co

                                                     Oft
                                                     o
         en
         o
         ea
         CM
         O\
                                 a
                                 a
                                 3
                                 I
                                 3
                                 s
                                 Cu
X

CO
                                                                     X-107

-------
Industry-wide Costs                          '•
                                             I
A subcategory-wide cost was estimated by multiplying the cost of
each level of treatment at various flow rates by the number of
plants in each flow regime in the industry,  (Table 10-33).  This
figure represents the cost of each treatment level for the entire
semiconductor subcategory.  This calculation does not make any
allowance for waste treatment that is currently in-place at semi-
conductor facilities.                        ;

Industry-wide Cost and Benefit               ;

Table 10-34 presents the estimate of total cost to the semiconductor
subcategory and the estimated pollutant reduction for each treat-
ment level.  Benefit was calculated by multiplying the estimated
number of gallons discharged by the subcategory times the per-
formance (long-term average) attainable by each of the recommended
treatment systems as shown in Table 10-22.  Values are presented
for each of the selected subcategory pollutant parameters.

The column "Raw Waste" shows the total amount: of pollutant that would
be discharged to the environment if no treatment was employed by
any facility in the industry.  The columns "Levels 1, 2, and 3 treat-
ment" show the amount of pollutants that would be discharged if any
one of these three levels of treatment were applied to the total
wastewater estimated to be discharged by the !semiconductor subcate-
gory.                                        ,

The total amount of wastewater discharged from each level of treat-
ment is also presented in this table to indicate the amount of
process wastewater to be recycled by each of the three levels of
treatment.  Process wastewater reuse is a major step toward water
conservation and reduction in pollutant discharge.  Reuse is also
important because treatment component size is directly affected
by the flow rate through the component.  As the flow rate decreases/
the size (and therefore the cost) of the component decreases.  Re-
cycle is therefore desired both to reduce the cost of treatment and
to reduce the amount of pollutants discharged!.  Thus, the
cost of Level 2 and Level 3 treatment is less than Level 1
treatment.                                   ;
                                 X-108

-------
                           TABLE 10-33

                   INDUSTRY-WIDE COST ANALYSIS
                      (MILLIONS OF DOLLARS)
Investment

Annual Costs

  Capital Costs
  Depreciation
  Operation and Maintenance
  Energy and Power

  Total Annual Cost
LEVEL 1

201.1
 17.0
 40.2
105.3
  3.2

165.7
LEVEL 2

71.5
 6.0
14.3
62.9
 2.8

86.1
LEVEL 3

167.8
 14.1
 33.6
168.1
  3.1

218.9
                                  X-109

-------
                                     TABLE 10-34    ;

                              SEMICONDUCTOR SUBCATEGORY
                              COST AND BENEFIT ANALYSIS
Plow (million liters)
         year**

I&rameter

  8 1,2,4-Trichlorobenzene
 11 1,1,1-Trichloroethane
 23 Chloroform
 25 1,2-Dichlorobenzene
 26 1,3-Dichlorobenzene
 27 1,4-Dichlorobenzene
 44 Methylene Chloride
 55 Napthalene
 58 4-Nitrophenol
 65 Ehenol
 69 Di-n-octyl Phthalate
 85 Tetrachloroethylene
 86 Toluene
 87 Trichloroethylene

TOTAL TOXIC ORGANICS

115 Arsenic
119 Chromium
120 Copper
122 Lead
124 Nickel
128 Zinc
    Oil & Grease
    Total Suspended Solids
    Fluoride

(xlO6) Dollars
** Year is based on 350 days

Raw Waste
855.4
kg/year
350.7
1264.2
21.4
680.0
236.9
213.0
374.7
26.5
20.5
277.1
8.6
494.4
46.2
241.2

2872.4
18.0
136.0
736.5
83.8
893.0
63.3
3784.3
41504.0
48911.8

Level 1
Treatment
855.4 ;
kg/year
*
*
* i
* '.
*
* ;
* !
i •
* !
*
*
*
* !
* !
* i
i
697.2 ;

i
696.3 \
59.9 j
805.8 |
|
i
19759.7 I
17022.5 ;
165.7
Level 2
Treatment
213.9
kg/year
*
*
*
*
*
*
*
*
*
*
*
*
*
*

174.3


174.1
10.7
201.5


3807.5
3272.7
86.1
Level 3
Treatment
213.9
kg/year
*
*
*
*
*
*
*
*
*
*
*
*
*
*

8.56


78.7
7.3
117.6


2716.5
1018.2
218.9
ince is unchanged i

i


£, TOXIC ORGANICS :
1
i
i
                                            X-110

-------
                        SECTION XI

       j      CAPACITOR SUBCATEGORY DISCUSSION
       I

 INTRODUCTION

 This  discussion  of  the capacitor subcategory consists of the
 following  major  sections:

       i    Products
       |    Size of the Industry
       ;    Manufacturing Processes
           Materials
       i.   Water  Usage
       j    Production  Normalizing Parameter
       i    Waste  Characterization and  Treatment-In-Place
       ;    Potential Pollutant  Parameters
       I    Applicable  Treatment Technologies
       I    Benefit Analysis

 Data  contained in this section were obtained from several  sources
 of  information.  Engineering visits were  made to  eight plants  with-
 in  the subcategory.   Wastewater samples were collected from three
 of  these eight facilities.  A  total of 33 capacitor manufacturing
 plants were  contacted by telephone during this survey.  A litera-
 ture  survey  was  also  conducted to ascertain  differences among
 types of capacitors,  process chemicals used,  and  typical manu-
 facturing  processes.

 PRODUCTiS

 The capacitor industry manufactures both  variable and fixed capa-
 citors.  Variable capacitors are typically a number of movable
 metal plates using an air dielectric  (insulator).   Production  pro-
 cesses requiring water use are limited to Metal Finishing  Category
 manufacturing processes  for variable  capacitor manufacture.  Because
 of production process inclusion in another point  source category,
 variable capacitors are  not discussed further in  this document.

 Fixed capacitors are  layered structures of conductive and  dielectric
 surfaces.  The layering  of fixed capacitors  is either in the form
 of rigid plates or in the form of  thin sheets of  flexible  material
which are  rolled.  Fixed capacitor types  are  distinguished from each
other by type of conducting material, dielectric  material,  and en-
capsulating material.  Only fixed capacitors  were  considered during
this stvidy and henceforth, in  this report, will be  referred  to as
 "capacitors."  Typical capacitor  applications  are  as  follows:
                             XI-1

-------
          Energy Storage Elements - Capacitors are used to accumu-
          late electrical energy at one rate and to discharge the
          energy at a faster rate.  Typical examples would be motor
          starting capacitors, fluorescent lamp ballasts, and auto-
          motive ignition condensers.        '•

     .    Protective Devices - Capacitors are used in combination
          with resistors to reduce radio interference caused by
          arcing.  Electrical components, audio equipment, and
          electrical instrumentation often incorporate these types
          of protective circuits.

          Filtering Devices - Capacitors are used in filter cir-
          cuits to distinguish among currents! of different fre-
          quencies.  Television components, audio equipment, and
          specialized instrumentation often incorporate these
          types of circuits.
                                             i
          Bypass Devices - Capacitors are used to prevent the flow
          of direct current without impeding the flow of alternating
          current.  Bypass capacitors attenuate low frequency cur-
          rents while permitting higher frequency currents to pass.
          Television components, audio equipment, and specialized
          instrumentation often incorporate these types of circuits.
                                             !         >
The electrical and physical characteristics that determine ulti-
mate selection of capacitor type and size are capacitance, voltage
breakthrough, current carrying capability, and stability.  Capaci-
tance is a measure of the quantity of electrical charge the capacitor
will hold per unit of potential between conductors.  Capacitance is
independent of the potential impressed on the unit.  Voltage break-
through limits the ultimate application of any capacitor.  If cur-
rent passes through a capacitor continually in one direction because
of arcing between the conducting layers, the value of capacitance
drops to zero.  Current carrying capability is the maximum current
that can be continuously carried without causing permanent damage
to the device.  The current carrying capability varies widely be-
tween capacitors depending upon the application.  Stability refers
to a capacitor's ability to maintain a fixed value of capacitance
over a specified temperature range and for a specific length of time.

The manufacture of capacitors includes part o'f SIC 3629 and all of
SIC 3675.  SIC 3629 includes oil filled capacitors, discussed
elsewhere, and other non-capacitor type electrical apparatus.  SIC
3675 includes all types of fixed and variable capacitors.  Fixed
capacitors covered under SIC 3675 are listed according to conducting
and/or dielectric materials as follows:
                              XI-2

-------
     Paper Dielectric         Tantalum Wet Slug
     Film Dielectric          Aluminum Electrolytic
     Metallized Dielectric    Mica Dielectric
     Dual Dielectric          Ceramic
     Tantalum Dry Slug &      Glass Encapsulated
       Wire
     Tantalum Foil

SIZE OF INDUSTRY
       [
The size of the capacitor industry is presented in the following para-
graphs in terms of number of plants, number of production employees,
and production rate.  Each of these figures represents an estimate
based upon data collected from visited facilities, telephone surveys,
and literature surveys.

Number of Plants

It is estimated that approximately 118 plants (including oil-filled
.manufacturers) are engaged in the manufacture of capacitors.  Of
these, 97 plants have more than 200 total employees.  These esti-
mates are based upon the Department of Commerce 1977 Census of
Manufactures (Preliminary Statistics) for SIC 3675.  This estimate
is high because it includes facilities which manufacture variable
capacitors.
       i
Number of Employees

It is estimated that 28,000 total employees are engaged in the manu-
facture of capacitors.  Of the 28,000 total employees, 23,300 are
production workers.  This estimate is based upon Department of
Commerce 1977 Census of Manufactures (Preliminary Statistics) for
SIC 3675.  This estimate .is high because it includes the total
number of employees engaged in the manufacture of variable capacitors

Production Rate

The total number of capacitors produced is not available.  However,
partial information from the Department of Commerce, 1977 Census of
Manufactures (Preliminary Statistics) is presented in Table 11-1.

MANUFACTURING PROCESSES

Manufacturing processes used in the production of paper dielectric,
film dielectric, metallized dielectric, dual dielectric, and tanta-
lum wire dielectric capacitors do not require process water that is
unique to the E&EC industry.  All manufacturing process water used
is covered under the Metal Finishing Category by unit operation
and will not be discussed further in this document.
                              XI-3

-------
                                  TABLE 11-1

                          ANNUAL CAPACITOR PRODUCTION
7 Digit SIC #

36750 13
36750 16
36750 23

36750 35
36750 37

36750 60

36750 62
36750 65
36750 67

36750 69
36750 73

36750 75
36750 77
36750 78
36750 80
36750 81
36750 83
36750 85
36750 86
36750 87
36750 89
      Capacitor Description

Paper dielectric, metal case
Paper dielectric, non-metal case
Film dielectric, metal and non-
 metal case
Metalized dielectric, metal case
Metalized dielectric, non-metal
.case
Dual dielectric, metal and non-
 metal case
Tantalum electrolytic, slug and
 wire, solid dry, metal case
 hermetic
Tantalum electrolytic, slug and
 wire, solid dry, metal case,
 non-hermetic
Tantalum electrolytic, slug and
 wire, solid dry, non-metal case
Foil and wet slug electrolytic
Aluminum electrolytic, tubular
 case, 5/8" diameter and up
Aluminum elelctrolytic, tubular
 case, subminiature 5/8" diame-
 ter and less)
All others
Mica dielectric, fixed
Ceramic, fixed tubular, disc,
 plate, stand-off tubular and
 disc, all two terminal
Ceramic monolithic chips
Ceramic monolithic leaded-radial
Ceramic monolithic leaded-axial
Other ceramics
All other fixed
Variable air dielectric, mica,
 ceramic and glass dielectric
;   1977     f
I Quantity 10

!  89.1
I   3.1
j 327.3

|   2.6
|  11.3

I  59.1

; 202.1


I  45.8


| 350.4

!  18.3
!  31.2

i 115.8
  39.4
 662.5
 411.5
 250.1
 702.8
 253.6
 132.7
 225.3
  57.9
   1977   f
$ Value 10

 69.3
  1.1
 44.1

  6.0
  7.9

 35.2

 56.3


  9.0


 79.3

 29.5
 45.4

 26.7
 47.6
 36.4
 26.9
 22.7
 92.6
 40.2
  9.0
 20.2
 27.4
                                       XI-4

-------
The types of capacitors included in this discussion are:

     . ;   Tantalum Wet and- Dry Slug
          Tantalum Foil
     . ;   Ceramic
     . >   Aluminum Electrolytic
     . >   Glass Encapsulated
          Mica Dielectric

The manufacturing processes used in producing each of these capa-
citors are described in the following paragraphs.  Each type of
capacitor and associated manufacturing operations are discussed
separately.

Tantalum Wet and Dry Slug Capacitors

Tantalum slug capacitors are used in a wide variety of electronic
applications.  Tantalum slug capacitors are encapsulated within a
dry epbxy molding (dry slug) or in a metal can filled with an elec-
trolyte (wet slug).  Figure 11-1 depicts the construction of the
tantalum wet slug and dry slug capacitors.  The anode fabrication
steps are similar for both tantalum wet slug and tantalum dry slug
capacitors.  Dry tantalum slug capacitors have a second oxide layer,
and an electrode soldered directly to the second layer.  The entire
dry slug capacitor is encapsulated in a dry epoxy molding.  The
following processes are performed in the manufacture of tantalum
slug capacitors:

          Tantalum Anode Fabrication (for dry and wet slug)
          - Tantalum power is combined with an organic binder
          and pressed into a pellet on a tantalum lead wire.
          The pellets are heated in a vacuum furnace to
          produce a sintered tantalum slug.

          Formation Reactions (for dry and wet slug) - The
          sintered tantalum slugs are dipped into a dilute acid
          solution to. form a thin tantalum oxide film.  This
          reaction proceeds rapidly and the sintered tantalum
          slug is then rinsed with deionized water and air dried.
          Deionized rinse water is then discharged as process
          wastewater.

          Assembly of Tantalum Wet Slugs - Tantalum slugs used
          in the wet capacitor receive no further treatment.
          The sintered tantalum slug with its oxide coating is
          inserted into a silvered metal can (the cathode), filled
          with an electrolyte, and sealed.  The unit is then elec-
          trically evaluated and shipped.
                                XI-5

-------
 C   0)
 tO  4J


 i1  2
 (0  JJ
co

s
    I
   I
 g
      rd
     I
     Cti
   T
            4J  5?
                               (U
(U
W
    2
    0)
                            I
                              0)
          	^^           I
 •s
  0)
 CO
                          u  m
                          4J  D
                          O iH
                          Q)  ffl
                           I
                           CQ
                                                    1
                                                     
-------
          Manganese Nitrate Dip ,  Reforming, and Carbon Slurry (dry
          slug only) - Sintered tantalum oxide coated pellets are
          dipped into a viscous solution of manganese nitrate and
          then placed in a heated atmosphere with steam.  A mangan-
          ese oxide coating develops on the tantalum oxide coat-
          ing.  The anode is then dipped into a dilute acid
          solution to eliminate any defects in the oxide coatings
          and then is rinsed with deionized water.  The anodes
          are then dipped into a carbon slurry and are air dried.
          The deionized rinse water is discharged as process waste-
          water.

          Cathode Preparation (dry slug only) - Dry tantalum slug .
          capacitors do not contain an electrolyte or a silvered
          metal container (which is the cathode for the tantalum
          wet slug capacitor).  The dry tantalum slug anodes are
          coated with a special silver paint which becomes the
          cathode.  Another tantalum lead wire is soldered to the
          coating to electrically complete the capacitor.  The
          capacitor is then dipped into a molten epoxy or pheno-
          lic compound and air dried.  The capacitor is then
          electrically evaluated and shipped.
Tantalum Foil Capacitors
Tantalum foil capacitors are used in a wide variety of electronic
applications where high quality and electrical stability are re-
quired.  Tantalum foil capacitors are wound capacitors.  The manu-
facturing processes for a typical ,
-------

                                                m
                                                4-1
tig  g
                       i
                                                JS
                                                cb
 (U
•D
                CJ
                                                               EH
                                                               M
                                                               CM
                                                               <
                                                               U'
                    •H  4J
                     O
                         0}
    (I)
    CO
  I
 (U
    b
  T
                                                               Ed
                                                              'M
                XI-8

-------
          amounts of acid, and glycol.  The capacitors are then
          sealed, air dried, and electrically aged (application
          of a D.C. potential).  The electrical aging improves
          the integrity of the oxide coating and establishes the
          equilibrium capacitance of the caThe finished capacitors
          are electrically evaluated and shipped.

Ceramic Capacitors

Ceramic capacitors are used in a wide variety of electronic applica-
tions where thermal stability and low cost are of prime importance.
Some ceramic capacitors consist of a single layer of ceramic with two
conducting surfaces while others consist of as many as forty layers
of cera,mic and conducting surfaces.

A typical ceramic capacitor production process sequence is shown in
Figure 11-3.  These capacitors are often manufactured without leads
and are directly attached to circuit substrates.  Ceramic capacitor
manufacturing processes vary according to ceramic capacitor type.
They also vary from manufacturer to manufacturer, even for similar
types of capacitors.  The dielectric used in ceramic capacitors is
the ceramic substrate itself.  The ceramic substrate consists of
barium titanate with trace amounts of other compounds.  The fol-
lowing discussion highlights typical manufacturing processes:

     . i   Ball Milling - Ceramic powders are purchased from
          vendors or made at the facility.  The powders are
       \   carefully weighed and introduced into a ball mill with
       i   water and occasionally a solvent to control the vis-
       i   cosity of the resulting slurry.  Water cleanup of the
       ;   ball mill results in a wastewater discharge.
       i
     . !   Multiple layer  ceramic capacitor manufacture - This pro-
       !   cess mixes the  ceramic slurry with organic binders
       ;   similar to those used in latex paint, and the slurry  is
       !   sheet cast onto a moving, heated, paper belt.  At the end
       I   of the'heated chamber, the  ceramic substrate is separated
       '!   from the paper  belt  and rolled.  Subsequent operations
       i   unroll the ceramic sheet and cut it  into  squares.   These
          operations do not result in a wastewater  discharge.

     .!   Ceramic Capacitors Assembly - For  single  layer  ceramic
          capacitors, the cured substrate  is silver painted on  both
       i   sides, leads are  soldered on, and  then  the  capacitor  is
          dipped in molten  epoxy.  The epoxy  is  air dried,  and  the
       I   capacitor is electrically evaluated  and  shipped.  For
       !   single layer ceramic capacitors,  the  ceramic  substrate
       I   is  fired  in a  furnace to harden  the  material.
                                XI-9

-------
 •
 C 0)
      
-------
          Multiple layer ceramic capacitor assembly - Assembly begins
          with an automated printing operation on the ceramic sheets.
          The printing operation usually uses precious metal ink.
          One facility produces its own ink by dissolving ingots of
          the precious metals followed by precipitation reactions.
          A wastewater discharge is associated with ink manufac-
          turing in the ceramic capacitor industry.

          The printed layered ceramic sheets are treated with a
          vacuum and heat to eliminate air voids and to harden the
          ceramic enough to be cut.  As many as forty layers of
          ceramic with printing on each sheet have been observed.
          The sheets are then diced into individual capacitors,
          and the ceramic capacitor chips are baked at a high tem-
          perature to fully develop the ceramic properties.  The
          ceramic capacitors are then silver coated on two surfaces,
          the leads are attached, and the whole capacitor is epoxy
          molded.  All of the assembly operations for multiple layer
          ceramic capacitors are dry except for lead cleaning.  At.
          one visited facility, the leads were cleaned producing  a
          wastewater discharge from bath dumps and subsequent water
          rinsing.  The cleaning solution used is a mild detergent
          followed by a water rinse.

Aluminum Electrolytic Capacitors

Aluminum electrolytic capacitors provide the greatest capacitance
per cubic inch  (except for  tantalum electrolytes) and the lowest
cost per microfarad of all  capacitors.  This type of capacitor  is
commonly used in  communications networks.   A general schematic of
the manufacturing process for an aluminum electrolytic capacitor
is shown in Figure 11-4.  .The overall construction of an aluminum
electrolytic capacitor is similar  to a  tantalum foil capacitor  as
presented in Figure 11-2.

Aluminum electrolytic capacitors are polar, semi-polar or non-polar.
The polarity of an aluminum electrolytic capacitor is determined  by
the location of the oxide coating  on  the anode and cathode.  The
non-polar capacitor has equal  thicknesses of oxide coating  on .both the
anode and the cathode.  The polar  capacitor  has an oxide coating  on
the anode only, while the semipolar capacitor  is  similar to the polar
capacitor but has an  additional  thinner oxide  coating on the cathode.

Each of these types of electrolytic capacitors  has a specific  use:
the polar capacitor  is used in  circuits where  the current  flows
only in one  direction, the  semi-polar capacitor  is used  in  circuits
where a current may  flow  in either direction  for  a specific length
of time only, and the  non-^polar capacitor  is  used in circuits  where
a current may flow in either direction  for  an extended  length of time.
                                  XI-H

-------


•s ^
S J
< ^

i
iH
3.
.u
3
I
•H
2
•g
•H
i
1


t

11
•H J3
r i ^3
£ *
1











—^



-^










4J
i
M


rH
rH
SJ


f
1


t
i!
3 0<
r. j i
S»i (0
t
V Jrf
9l
£ *
itj
H3 (LJ
CM (Q
t
(!)
°
t
.JS
T3 JCj*
••i o
1-5  "rH
a) ^
M
J >


                      a
                      0)
                     4J
                      to
                      0)
                     I
                                                         PL)
                                                         f£
                                                         D
                                                         CJ
 !Z
 O
                                                                  U
EH
CO
g
                                                                 o
                                                                 EH
                                                                 M
                                                                 O
                                                                 CJ
M
EH
X
J

§
EH
O
w
                                                                 s
                                                                 D
                                                                 s
                                                                 D
XI -12

-------
The unique characteristics of these capacitors allows them to be used
in a variety of end uses and applications.  Figure 11-5 is a schematic
of a polar, a non-polar, and a semi-polar aluminum electrolytic capa-
citor. : Basically, all aluminum electrolytic capacitors are wound
capacitors of etched and electrochemically aged aluminum foil,
interwoven with a kraft paper spacer and filled with a liquid elec-
trolyte.  The following process operations are performed:

          Etching And Forming Reactions - High purity aluminum
          foil is etched to increase the effective surface area.
          This increases the capacitance per square foot of area.
          The capacitor is etched by passing current through the
          foil while submerging it in strong acids, similar to
          anodizing.  This operation produces substantial quanti-
          ties of wastewater from .bath dumps and subsequent water
       ;   rinsing.  The forming reaction is an additional electro-
          chemical operation where a direct current potential is
          applied between the aluminum foil roll and the steel
          reaction tank, which is filled with a dilute ammonium
          pentaborate solution.  The. aluminum foil is slowly un-
       '   wound and passed through the solution and then rewound.
       :   This causes an aluminum oxide film of a predetermined
          thickness to  form on the foil.
                                              A
          Aluminum Electrolytic Capacitor Assembly - The etched
          and formed aluminum foil is cut and leads are attached.
          The foil is interwoven with a kraft paper spacer, wound
          and inserted  into a metal  container.  The capacitors are
          then placed under heavy vacuum and are heated.  The vacuum
          is released and the chamber is filled with an electrolyte
          which fills the capacitors.  The  chamber is drained,
          opened, and the fill holes on the capacitors are  soldered
          closed.  The  electrolyte is water with trace amounts of
          ethylene glycol, phosphoric acid  and/or  ammonium  borate«
          These operations usually do not produce  any wastewater
       i   discharges.   The capacitors are electrically aged by ap-
          plication of  direct current.  This heals voids  in the
          oxide coating and brings the capacitance to an  equilibrium
       |   value.  The finished capacitors are electrically  evaluated
       ;   and shipped.

Glass  Encapsulated Capacitors

Glass  encapsulated  capacitors with glass dielectric plates  are  noted
for  their ability to operate  at  extreme  temperatures, pressures,  and
voltages.   They are relatively expensive per unit  of  capacitance  and
are  traditionally used  in high technology areas  where  costs are    *
secondary to performance.  Typical applications  are precision instru-
mentation and space hardware  manufacturing.  Figure  11-6  represents
                              XI-13

-------
Anode
Anode
Anode-
             Oxide Coating
                POLAR
-Cathode
             Oxide Coating
 Cathode
              NON-POLAR
             Oxide Coating
                            L
                            F
•Cathode
              SEMI-POLAR
              FIGURE 11-5

   POLAR, NON-POLAR, AND SEMI-POLAR
        ELECTROLYTIC CAPACITORS
                XI-14

-------





3 Ribbons
CO
m
rH
O
CO




Glass
Cover '
»!
111

r
•H
iH i

M ;
(D
i
ju

1 Glass
_~I Ribbon
i


— — — «^


_ __^.
•rH
1
^


—

Anneal
t
id Clean
>rminals
a *
t
CD
1
os
|r
-8-
Q
T3
•H
^
t
Cut
Capacitors
1


.-.^


-*

— *


-H^

t

•H
*
iH .-
/R C
Electricc
Evaluatio
T
cu
•H

1
Inspect
Capacitors
r
5
&
8
•4-1
CP
fl3
CO
s
t
•0


.-.^





                                                ca
                                                «
                                                a
                                                EH
                                                u
                                                <
                                                b
                                                o
                                                EH
                                                M
                                                O
                                                <
                                                O4
                                                
-------
a  schematic  of  a  glass  encapsulated  capacitor,
facturing  operations  are  performed:
The following manu-
          Capacitor Assembly  -  Ultra-thin  glass  ribbon  is
          alternately  stacked with  high  purity aluminum foil
           (unetched and  unformed).   Leads  are attached,  a
          glass  cover  is placed into position and  the unit  is
          annealed.  These  operations  are  dry and  do not produce
          a wastewater discharge.             •

          Terminal Cleaning,  Glass  Cutting & Penetrant  Inspection  -
          the  terminals  of  the  sealed  glass capacitors  are  dipped
          in sulfuric  acid  and  rinsed  in water.  The capacitor
          bars are placed in  a  device  where spinning disks  are
          hydraulically  lowered through  the glass  capacitor bar
          to individual  capacitors.  Water is sprayed over  the
               capacitor bar  to cool the bar and flush  away the glass
          particles.   Finally,  the  capacitors are  penetrant in-
          spected, rinsed,  electrically  evaluated, and  shipped.
          These  operations  produce  a wastewater discharge from
          contact cooling,  bath dumps, and subsequent water
          rinsing.                            ;

Mica Capacitors                               •

Mica capacitors  are similar to  glass encapsulated  capacitors in func-
tion and construction.   They  display exceptional tolerance  to extreme
temperature, pressure, and  voltage.  Mica  capacitors are often encap-
sulated with plastic.  Typical-process operations  for mica  capacitor
production are discussed  below:               I

     .    Dielectric Fabrication -  Pure  mica is subjected to high
          velocity water  jets which shred  the mica into  thin, small
          flakes.  The flakes are passed over a moving  vacuum belt
          which  dries  the mica  flakes  and  interlocks them into a
          fragile mica sheet.   The  mica  sheet is treated with
          silicon resins  to add  strength.   This process  has a
          wastewater discharge  from the  water used as a  medium to
          carry  the mica  flakes  to  the paper making process.
                                              i
     .    Conducting Surface Application - Various inks  and appli-
          cation techniques are  used to  apply k conducting  surface
          to the mica dielectric.   Printing type ink with substan-
          tial percentages of precious metals is commonly used.
          The assembly of the capacitor  is  similar to a  layered
          ceramic capacitor.  These  operations|rarely result in a
          wastewater discharge.  Because of the inclusion of mica
          dielectric fabrication separately and because  the con-
          ducting surface application does  not;result in a waste-
          water  discharge, mica  capacitors  will not be discussed fur-
          ther in this section.
                                 XI-16

-------
MATERIALS
The materials used to manufacture capacitors are raw materials and
process chemicals.  The raw materials are conductors, dielectrics,
electrolytes, leads, and encapsulating materials.  The raw materials
become; part of the final product.  The process chemicals are acids,
bases, salts and organics.  The process chemicals do not enter the
product per se, but are necessary to perform certain operations.
These materials are discussed in this section.

Raw Materials

Conductors - Aluminum foil is used extensively in several types
of capacitors.  Aluminum is an excellent conductor and is relative-
ly inexpensive compared to other conductive materials.  Tantalum
foil and tantalum sintered metals are also used extensively
throughout the capacitor industry.  This material' is relatively
expensive, but because of its durability and elec.trical stability
is extensively used in miniature and subminiature capacitor appli-
cations.  The amount of tantalum used does not represent a signi-
ficant portion of the total cost of the capacitor.  Numerous types
of precious metal inks are also used as conductors in layered capa-
citors.  These inks are very expensive and constitute a significant
portion of miniature and subminiature capacitor costs.

Dielectrics - Capacitor dielectrics are solids, liquids; and gases.
Often combinations of these are used to take advantage of various
electrical characteristics.  Ceramic capacitors use solid ceramic
substrates for the dielectric.  These display exceptional dielectric
and thermal properties which increase their durability and reliability,
and they are relatively inexpensive.  Kraft paper and plastic film
are used as dry dielectrics and are relatively inexpensive but are
not useful in high voltage situations.  Glass and mica are excellent
dielectric materials and are relatively inexpensive but require spe?-
cial skills and equipment to handle efficiently. -Electrochemicaliy
formed oxide coatings are used extensively as dielectrics in higher
quality aluminum electrolytic, tantalum foil and tantalum slug
capacitors.  These coatings provide exceptional dielectric pro-
perties at a reasonable cost.                                     .

Electrolytes - Electrolytic capacitors usually use a liquid electro-
lyte and an oxide film as the dielectric.  The kraft paper also serves
as a spacer and an absorbing medium for the electrolyte.  The elec-
trolyte is usually less than a one percent solution of strong acids,
glycols, and salts dissolved in deionized water.
Leads
citor
often
- Copper and tantalum are the most common materials for capa-
leads.  Capacitors that are used on printed circuit boards
do not have leads but are attached directly to the board.
                               XI-17

-------
Encapsulating Materials - Steel and aluminum containers, phenolic
moldings, and epoxy moldings are the most common encapsulating
materials.  Wax and various other plastics are used to seal the
metal case capacitor containers.  Glass encapsulation is also used.
Process Chemicals
Acids  (sulfuric
hydroxide), and
cohol) are used
slug capacitors
tors.  Organic
cohol  are used
citors and are

WATER  USAGE
, nitric acid), bases (potassium, hydroxide, sodium
 organic solvents (trichloroethylene, isopropyl al-
 in the formation reactions for tan'talum dry and wet
, aluminum foil capacitors, and tantalum foil capaci-
solvents such as trichloroethylene and isopropyl al-
primarily in clean-up operations, of completed capa-
not discharged.                 :
Prom information gathered during plant visits and telephone contacts,
process water usage for the entire capacitor industry is estimated to
be 0.95 million liters (0.25 million gallons) per day.  Water usage
of the plants visited and surveyed ranges from 454 liters (120 gal-
lons) per day to 18168 liters (4800 gallons) pejr day.  The wide range
of water flow rates is caused by a variety of factors including pro-
duct type/ production rate, location, facility size, and other factors

Of the approximately 0.95 million liters (0.25 million gallons) of
process wastewater discharged per day, it is estimated that between
30 and 40 percent is treated prior to being discharged.  Treatment
techniques vary considerably throughout the industry and consist
mainly of pH adjustment only.  Table 11-2 presents capacitor process
wastewater sources, observed in in-place treatment systems, and the
disposition of process wastewater according to capacitor type.

PRODUCTION NORMALIZING PARAMETERS

Production normalizing parameters are used to relate the pollutant
mass discharge to the production level of a plant.  Regulations
expressed in terms of these production normalizing parameters are
multiplied by the value of tliis parameter at each plant to determine
the allowable pollutant mass that can be discharged.  Meaningful
production normalizing parameters for capacitors that have been
considered are:                                |

     .    Size, complexity and other product attributes that
          affect the.amount of pollution generated during
          manufacture of a unit.               \

          Manufacturing processes, but differences in processes
          used in the manufacture of the same product result in
          differing amounts of pollution.
                                  XI-18

-------
•I
                 iW »*w;Hl
                 url
                 en w en
     *
     *
I
     
-------
          Production records, but lack of applicable data may
          impede determination of production rates in terms of
          desired normalizing parameters.    |

Several other broad strategies that have been developed to determine
normalizing parameters are as follows:       j

          The process approach - In this approach, the production
          normalizing parameter is a direct measure of the produc-
          tion rate for each wastewater producing manufacturing
          operation.  These parameters may be expressed as sq.m.
          processed per hour, kg of product processed per hour,
          etc.  This approach requires knowledge of all the wet
          processes used by a-plant because the allowable pollu-
          tant discharge rates for each process are added to de-
          termine the allowable pollutant discharge rate for the
          plant.  Regulations based on the production normalizing
          parameters are multiplied by the value of the parameter
          for each process to determine allowable discharge rates
          from each wastewater producing process.

          Concentration limit/flow guidance -!' This strategy limits
          effluent concentration.  It can be applied to an entire
          plant or to individual processes.  :To avoid compliance
          by dilution, concentration limits are accompanied by
          flow guidelines.  The flow guidelines, in turn, are ex-
          pressed in terms of the production [normalizing parameter
          to relate flow discharge to the production rate at the
          plant.

Based upon the nature of capacitor manufacturing processes, it
was determined that the principal factors affecting the waste
characteristics for the capacitor types producing wastewater
discharges are as follows:                   \
     Capacitor Type

     Tantalum Slug
     Tantalum Foil
     Aluminum Electrolytic
     Glass Encapsulated
     Ceramic
Production Normalizing Parameter

Mass of tantalum processed
Area of tantalum foil processed
Area of aluminum foil processed
Number of capacitors processed
Mass of ceramic substrates ball
  milled, and mass of ink pro-
  duced (where applicable)
Basing limitations of mass on specific raw material processed re-
sults in a limitation expressed as mg of a specific pollutant dis-
charged per kilogram of specific raw material used in production.
Basing limitations on the area of specific raw materials results
in a limitation expressed as mg of a specific pollutant discharged
                              XI-20

-------
per sq !m of specific raw material used in production.  Basing li-
mitations on number of units processed results in a limitation ex-
pressed as mg of a specific pollutant discharged per number of units
processed.  The limitations are listed below according to capacitor
type arid are discussed in the following subsections.
     Capacitor Type

     Tcintalum Slug
     Taintalum Foil
     Aluminum Electrolytic
     Glass Encapsulated
     Ceramic

Tantalum Slug Capacitors
Limitation

mg/kilogram tantalum
mg/sq m of tantalum foil
mg/sq m of aluminum foil
mg/number of capacitors
mg/kilogram
The wastewater producing processes in tantalum slug manufacture in-
clude bath dumps and subsequent water rinsing from forming, reforming
and cathode preparation.  The use of these water discharging processes
is not uniform from plant to plant; however, mass discharge of selec-
ted pollutant parameters can be directly related to the weight of
tantalum powder purchased and processed.  Surface area was not chosen
as a production parameter because the sintering process causes the
entire tantalum slug to become microscopically perforated and deter-
mination of real surface area is very imprecise.  The weight of tan-
talum processed is easily determined from purchasing records and thus
is a very reliable and appropriate parameter on which to base limita-
tions . ;

Tantalum Foil Capacitors

The primary water discharging process from tantalum foil capacitor
manufacturing facilities is the oxide formation reaction.  The mass
discharge from this reaction is directly proportional to the surface
area of the foil processed.  This foil  is typically handled in indi-
vidual strips and/or rolls, and area is easily obtainable from pur-
chasing records.

Aluminum Electrolytic Capacitors
       i
The number of water discharging operations varies from plant to plant
because! not all processes are used an- equal number of times at each
facility.  Some facilities do not use the etching step.  An area
based limitation for each operation  (etching and forming) would be
equitable for facilities that perform only one or both operations.
The aluminum is usually processed from  a continuous roll, and the
surface area of the roll is easily obtainable.
                              XI-21

-------
 Glass Encapsulated  Capacitors

 There are  three  water discharging operations  associated  with  glass
 encapsulated  capacitors:   penetrant inspection, .glass  cutting,  and
 lead  wire  cleaning.   The  penetrant pollutant  mass  discharge rate  is
 associated with  the surface area and the  numberiof capacitors.  The
 pollutant  mass discharge  from the glass cutting ioperation  is  related
 to  the surface area and the number,of the cuts. , The lead  cleaning
 process pollutant mass discharge is truly a function of  the number
 of  leads cleaned rather than of  surface area.  However,  the pollutant
 mass  discharge can  be related to total number of capacitors produced
 because there is not a large difference in surface area  between the
 smallest and  largest glass encapsulated capacitors.

 Ceramic Capacitors

 Ball  mill  washdown,  ink manufacturing, and lead  cleaning are  the  wet
 process discharges  for this type of capacitor.  iBall mill  and lead
 cleaning mass throughput  is an appropriate mass  limitation.   The
 pollutant  mass discharge  rate is a function of the number  of  times
 per day the mill is  washed down  and the area  of ;the cleaned surface.
 This  rate  can be related  to the  total mass throughput  of the  ball
 mill  because  washdown is  required after every batch.   A  number  of
 facilities manufacture precious  metal inks which are used  as  the
 conducting surfaces  of the capacitor.  The pollujtant mass  discharge
 rate  is a  function  of the mass of precious metals  precipitated.
 The weight and proportion of the precious metals to the  total
 weight of  ink manufactured is easily obtainable.   Therefore,  mass
 of ink is  a realistic parameter  on which  to base the mass  of  pre-
 cious  metals, and thus is an effective production  normalizing
 parameter.                                      j

 WASTE  CHARACTERIZATION AND TREATMENT IN-PLACE  :

 This  section  will present the sources of  waste in  the  capacitor sub-
 category and  sampling results of this wastewater.  The  in-place  waste
 treatment  systems will also be discussed  and  effluent  sample  data
 from  these  systems will be presented.  Table  11-2  summarized  ob-
 served  treatment facilities for  various capacitor  types.

 Process  Descriptions  and  Water Use             ;
                                                i
Capacitor  types  are grouped according to  distinct  wet  process opera-
 tions  because the product type determines the wet  manufacturing pro-
 cesses  used.  Table 11-3  presents capacitor type;,  wastewater  dischar-
ging operations, and  flow rates.   Total plant discharge  rate  is
affected by the  product type and  production rate.  Product varia-
 tions by size and plant condition also affect  total wastewater
discharge  rate.  The  following paragraphs briefly  describe the
distinct operations presented  in  Table 11-3 resulting  in wastewater
discharge  in  this subcategory.
                               XI-22

-------
                         TABLE 11-3

                   CAPACITOR SUBCATEGORY
              WASTEWATER DISCHARGING PROCESSES
Capacitor Type

Glass Encapsulated
                       Wastewater
                  Discharging Operations

                  Terminal Cleaning
                  Glass Cutting
                  Penetrant Inspection
                         Volume  Flow
                         Rate  (1/hr)

                             330
                             678
                             481
Ceramic
Tantalum
(dry &
wet slug)
Tantalum Foil
                  Ball Mill Washdown
                  Ink Manufacturing
                       (Optional)
                  Lead Cleaning
                       (Optional)
 Etching
 Forming
 Reforming
'Other  (Bar  Wash)
                  Formation Reactions
                            1,130
                            1,797

                              NA
 38
 19
 38
114
                              115
Aluminum Electrolytic
                  Etching
                  Formation Reactions
                              380
                              190
NA = Flow rate is unavailable
                                XI-23

-------
Terminal  Cleaning  -  This  process  is  associated with  glass  encap-
sulated capacitor  manufacturing.   Annealing  at high  temperatures
results in  coating the  copper  leads  with  a copper  oxide.   To  remove
the oxide,  the  leads are  dipped into a  mild  acid solution  and
rinsed.   Ceramic capacitors  also  require  leadicleaning.  These
capacitors  are  washed in  a mild detergent solution to  remove
excess solder flux.   This process  is characterized by  a  flow  of
76 to 114 liters per hour and  fluctuating concentration  levels at
the visited plants.                           '
                                     f         '
Glass Cutting - This process is uniquely  associated  with glass en-
capsulated  capacitors.  Special cutting disksiare  hydraulically
lowered through a  bar of  uncut capacitors which have been  fabrica-
ted as a  group.  Water  sprayed over  the bar  and spinning disk cools
the disk  and flushes away sawed glass particles (kerf).  A visited
plant had a flow rate of  679 liters  per hour (180  gal/hr)  and high
solids content  in  this  manufacturing process raw wastewater stream.

Penetrant Inspection -  This  process  is  not unique  to the capacitor
industry.  .This method  of inspecting parts foi: minute  cracks  and
flaws is  used extensively in many  industries.| This  process was
observed  at a glass  encapsulated  capacitor manufacturer.   The ca-
pacitor was dipped into a solution,  passed under a UV  light for
examination, and then washed,  rinsed, and dried.   The  wastewater
discharge from  this  process  results  from  the wash  and  rinse steps.

Ball Mill Washdown - Ceramic capacitor  manufacturing requires re-
gular (usually  daily) cleariout of  the ball mill.   The  procedure
requires  that an operator hose down  the interior of  the  ball  mill
and the surrounding  area.  The wastewater discharge  rate is a func-
tion of the frequency that the ball  mill  is  cleaned.   The  wastewater
discharge rate  varies widely according  to the size of  the  ball mill,
actual pounds of specific batches, and  operator variability in
cleaning.  However,  this  does  not  affect  the pollutant discharge
mass associated with washdowns.

Ink Manufacturing'-  This  process  is  not unique to  the  capacitor in-
dustry.  However,  precious metal  ink applicable for  use  in capaci-
tors warrants distinct  consideration.   Precious metals are dissolved
in strong acids (such as  sulfuric  and nitric acid) and then processed
with proprietary precipitation reactions.  There are numerous decant,
filtering, and  mixing steps.   The  1,797 liter/hr (475  gal/hr) water
discharge rate  sampled  at one  plant  is  characterized by  strong acids
and bases.  The discharge rate is  affected by,the  number of water pro-
ducing reactions and  the  total amount of  precipitate formed.  These
wastewater producing  reactions will  vary  from;plant  to plant, depen-
ding upon the exact  ink produced and type of equipment used.

Etching - (tantalum  dry and  wet slug capacitots) - Sintered
tantalum pellets are  treated with  very  dilute , solutions  of nitric
and phosphoric  acids  to generate a tantalum  o^ide  dielectric  coat-
ing.  The low water  discharge  rate,  estimated!to be  38 liters/hr
(10 gal/hr) at  a visited  plant, is characterized by  batch  dumps of
the very weak solutions of the above acids and water from  subsequent
rinsing.                                      I
                                 Xl-24

-------
Etching - (aluminum electrolytic) - Aluminum foil is electrochemi-
cally etched in very strong acid solutions.  The objective is to
roughen the metal, producing a surface with increased effective
area,  iThe process flow rate is estimated to be 310 liters/hr (100
gal/hr) at a contacted facility and is characterized by batch dumps
of high concentrations of acid and dissolved metal and subse-
quent water rinsing.

Forming - (tantalum dry slug) - Etched capacitors are dipped in a
viscouis solution of manganese nitrate.  The capacitors are then
placed in a heated steam atmosphere where manganese oxide forms
over the tantalum oxide film.  This process was observed to have
a very low discharge rate of manganese nitrate solutions, estima-
ted at 19 liters/hr (5 gal/hr) at a visited plant.
       !.                          "                      •
Reforming - (tantalum dry slug) - After forming, the capacitors are
dipped into a dilute solution of nitric and phosphoric acid.  The
operation eliminates voids in the oxide surface.  The discharge was
estimated to be 36 liters/hr (10 gal/hr) at a visited plant and is
characterized by batch dumps of the dilute acids and subsequent
water rinsing.

Other - (Bar Wash) (tantalum dry slug) - At one visited plant, groups
of capacitors were attached to a stainless steel bar which was used
as a holding fixture during manufacture.  The bar is separated from
the capacitors during one of the final operations.  The bar is then
placed in a bar wash where mangnaese nitrate/oxides are removed by
alternating a mild alkaline cleaner and rinse cycles.  The discharge
rate is 114 liters/hr (30 gal/hr) at the visited plant and is charac-
terized by high solids content.

Formation Reactions - (tantalum foil) - Tantalum foil is electro-
chemically reacted to form an oxide film in various types of mildly
acidic glycol solutions.  Two of the visited- plants processed tanta-
lum foil with different solutions and different equipment.  The
wastes are characterized by batch dumps of acid solutions and
subsequent water rinsing.

Formation Reactions - (aluminum electrolytic) - Etched aluminum foil
is electrochemically reacted in dilute solutions of ammonium penta-
borate,.  The discharge rate is estimated to be 380 liters/hr (100
gal/hr) at a visited plant and is a mildly acidic solution with vari-
able solids content and subsequent water rinsing.

Wastewater Analysis Data

Specific capacitor manufacturing operations were observed and sampled
at three facilities.  Each sample taken was analyzed for all toxic
pollutants and a number of non-toxic metals and other pollutants
as listed in Table 11-4.  Process raw waste, incoming water, and
treated effluent wastewater characteristics for individual plants are
presented in tables 11-5 through 11-7.
                                 XI-25

-------
                                              TABLE 11-4
                                    POLLUTANT PARAMETERS  ANALYZED
TOXIC ORGANICS

 1.   Acenaphthene                                46.
 2.   Acrolein                                    47.
 3.   Acrylonitrile                               48.
 4.   Benzene                                     49.
 5.   Benzidine                                   50.
 6.   Carbon Tetrachloride(Tetracliloroniethane)    51.
 7.   Chlorobenzene                               52.
 8.   1,2,4-Trichlorobenzene                      53.
 9.   Hexachlorbenzene                            54.
10.   1,2-Dichlorethane                           55.
11.   1,1,1-Trichloroethene                       56.
12.   Hexachloroethane                            57.
13.   1,1-Dichloroethane                          58.
14.   1,1,2-Trichlroethane                        59.
15.   1,1,2,2-Tetradiloroethane                   60.
16.   Qiloroethane                                61.
17.   Bis(Chlocomethyl)Ether                      62.
18.   Bis(2-Chlorc3ethyl)Ether                     63.
19.   2-Chloroethyl Vinyl Ether(Mixed)            64.
20.   2-Chloronaphthalene                         65.
21.   2,4,6-Trichlorophenol                       66.
22.   Parachloromsta Cresol                       67.
23.   Chloroform( Trichloronethane)                68.
24.   2-Chlorophenol                              69.
25.   1,2-Dichlorobenzene                         70.
26.   1,3-Dichlorobenzene                         71.
27.   1,4-Dichlorobenzene                         72.
28.   3,3'-Dichlorobenzidine                      73.
29.   1,1-Dichloroethylene                        74.
30.   1,2-Trans-Dichloroethylene                  75.
31.   2.4-Dichlorophenol                          76.
32.   1,2-Dichloropropane                         77.
33.   l,2-Dichloropropyler>e(l,3-Dichloropropene)  78.
34.   2,4-Dimathylphenol                          79.
35.   2,4-Dinitro toluene                          80.
36.   2,6-Dinitrotoluene                          81.
37.   1,2-Diphenylhydrazine                       82.
38.  Ethylbenzene                                83.
39.  Pluoranthene                                84.
40.   4-ChlorophenylPhynyl Ether                  85.
41.   4-BronophenylPhenyl Ether                   86.
42.  Bis(2-Chloroisopropyl}Ether      .           87.
43.  Bis(2-CM.oroethoj!y)Methane                  88.
44.  Msthylene Chloride (Dichlororoethane)         89.
45.  Methyl Chloride(Chloromethane)              90.
Methylbroraide  (Brcsnomethane)
Bromoform  (Tribrononethane)
Dichlorobrononethane
Trichloroflucaromethane
Dichlorodiflujoromethane
Chlorodibrcsmcmethane
Hexachlorc±)utadiene
Hexachlorocyclopentadiene
Isophorone
Naphthalene
Nitrobenzene
2-Nitrophenol
4-Nitrophenol
2,4-Dinitrophenol
4,6-Dinitro-o-cresol
N-Nitrosod imethylamine
N-Nitrosodiphenylamine
N-Nitrosodi-N^-Propylamine
Pentachlorophenol
Phenol
Bis(2-Ethylhe3^1)Phthalate
Butyl Benzyl Phthalate
Di-N-Butyl Phthalate
Di-N-Octyl Phthalate
Diethyl Phthalate
Dimethyl Phthalate
1,2-Benzanthracene(Benzo(A)Anthracene)
Benzo(A) Pyrene (3,4-Benzo-Pyrene)
3,4-Benzofluoranthene(Benzo  (B)Fluoranthene)
11,12-Benzofluoranthene(Benzo(K)Fluoranthene)
Chrysene     :
Aoanaphthylene
Anthracene   i
1,12-Benzoperylene (Benzo {on) -Perylene)
Fluorene
Phenanthrene
1,2,5,6-Dibenzathracene(Dibenzo(A,H)Anthracene)
Indeno(1,2,3-DC)Pyrene(2,3-o~PhenylenePyrene)
Pyrene
Tetrachloroethylene
Toluene
Trichloroethylene
Vinyl Chloride (Chloroethylene)
Aldrin
Dieldrin
                                              XI-26

-------
                                             TABLE 11-4 Con't
 TOXIC ORGANICS CON'T

  91.   Chlordane(TechnicalMixtureandMetabolites)
  92.   4,4'-DDT
  93.   4,4'-DDE(P,P'-DDX)
  94.   4,4'-DDD(P,P'-TDE)
  95.   Alpha-Endosulfan
  96.   Beta-Endosulfan
  97.   Endosulfan  Sulfate
  98.   Endrin
  99.   Endrin Aldehyde            ;
 100.   Heptachlor
 101.   HeptachlorEpoxide(BHC-Hexachlorocyclo-
        hexane)
 102.   Alpha-BHC
 103.   Beta-BHC
 104.   Garnma-BHC(LIndane)
 105.   Delta-BHC(PCB-Polychlorinated
 106.   PCB-1242(Arochlor 1242)
 107.   PCB-1254(Arochlor 1254)
 108.   PCB-1221(Arochlor 1221)
 109.   PCB-1332(Arochlor 1232)
 110.   PCB-1248(Arochlor 1248)
 111.   PCB-1260(Arochlor 1260)

 NON-TOXIC METALS

 Calcium
 Magnesium
 Aluminum
 Manganeses
 Vanadium
 Boron   ;
 Barium
 Molybdenum
 Tin
 Yttrium  i
 Cobalt  :
 Iron     !
 Titanium j

 OTHER POIjLUTANTS

 Oil & Grease
Total  Organic Carbon
 Biological Oxygen Demand
Total  Suspended Solids
 Phenols
 Fluoride J

 Xylenes  '
Alkyl  Epcixides
112.  PCB-1016(Arochlor 1016)
113.  Toxaphene
129.  2,3,5,8-Tetrachloridibenzo-P-Diox.in (TCDD)

TOXIC METALS
114.
115.
117.
118.
119.
120.
121.
122.
123.
124.
125.
126.
127.
128.
 Antimony
 Arsenic
 Beryllium
 Cadmium
 Chromium
 Copper
 Cyanide
 Lead
 Mercury
 Nickel
 Selenium
 Silver
 Thallium
• Zinc
                                              XI-27

-------
                                             TABLE 11-5
                            CERAMIC AND TANTALUM SLUG AND BOIL PROCESS WASTES
                                          (PLRNT ID# 19116)
 Stream Identification
 Plow Rate Liters/Hour
 Duration Hours/Day
 Sarple 10 No.

 TOXIC ORGANICS

  04 Benzene
  23 Chloroform
  30 1,2 Transdichloroethylene
  38 Ethylbenzene
  39 Fluorantheno
  44 Methylene  Chloride
  55 Napthalene
  65 Phenol
  66 Bls(2-ethylhexyl)Phthalate
  68 Di-N-Butyl Phthalate
  76 Chrysene
  84 Pyrene
  86 Toluene
  87 Triehloroethylene
 Total Toxic Organics

 TOXIC METALS

 114 Antimony
 115 Arsenic
 117 Beryllium
 118 Cadmium
 119 Chromium
 120 Copper
 122 Lead
 123 Mercury
 124 Nickel
 125 Selenium
 126 Silver
 127 Thallium
 128 Zinc
 Total Toxic Metals

 NON-TOXIC METALS

     Aluminum
     Barium
     Boron
     Calcium*
     Cobalt
     Iron
     Magnesium*
     Manganese
     Molybdenum
    Sodium*
     Tin
     Titanium
    Vanadium
    yttrium
Total Non-Toxic Metals
    Tcnperatura °c
121 Cyanide, Total
    Col & Grease
    Total Organic Carbon.
    Biological Oxygen Demand
    Total Suspended Solids
    Phenols
    Fluoride
* Matals Not Included In Totals
B-Concentraction found in blank sample
mg/1
Ceraraic
kg/day
Ball Mill
Wash
1130
24
3577

< 0.010B



< 0.010B

< 0.01
< 0.010
< 0.010


<'0.010B
< 0.010B
0.000
< '0.005
< 0.003
< 0.001
, 0.007
< 0.001
0.022
0.003
< 0.001
< b.ooi
< 0.003
0.127
'< 0.025
0.035
0.194
< 0.001
0.010
0.204
10.690*
< 0.001
0.067
3.137*
. 0.005
< 0.001
2.684*
0.008
< 0.001
0.015
* o.ooi •
0.309
5.5
20
5.000
<'4.00
























0.00019

0.0006
0.00008



0.0034

0.00095
0.00522

0.00027
0.0055
0.288

0.0018
0.085
0.00014

0.0728
0.00022

0.0004

0.00833


0.136




mg/1

Ceramic
1797
24
3578

< 0.010B

< 0.010

< 0.010B

< 0.01
< 0.010
< 0.010


< 0.010B
0.027B
0.027
< 0.005
< 0.003
< 0.001
• 0.006
0.061
0.389
0.213
< 0.001
0.056
< 0.003
0.034
< 0.025
0.269
1.028
0.903
3.025
0.800
11.767*
0.005
1.513
3.311*
0.031
0.004
370.64*
0.044
2.770
0.035
< 0.001
9.130
8.9
23
56.0
38.0
56.0


kg/day

Ink. Mfg.
















0.0012
0.0012



0.00026
0.00263
0.01678
0.00919

0.00242

0.00147

0.0116
0.0444
0.0389
0,1305
0.0345
0.5075
0.00022
0.06525
0.1428
0.00134
0.00017
15.985
0.0019
0.1195
0.00151

0.3938


2.415
1.639
2.415


mg/1

Tantalun
295
24
3579
< 0.010
< iQ.OlOB

i
[
< O.&lOB

<" 0.01
< 0.010
< 0.010


< 0.010B
0.06B
0.06
< ;o.oos
< t0.003
<-:o.ooi
;0.005
< 0.001
;0.030,
< 0.001
.< 0.001
< 0.001
< 0.003
< 0.005
< 0.025
< 0.030
0.035
< 0.001
0.020
0.218
0.920*
< 0.001
0.038
0.263*
< '0.001
0.001
1.741*
0.002
< 0.001
< 0.001
< b.ooi
I0.279
5.5
26
8.000
24.000

0.021

kg/day

mg/1

kg/day

Slug & Foil Final Effluent
















0.00042
0.00042



0.00004

0.00021







0.00025

0.00014
0.00153
0.00651

0.00027
0.00186
9254
24
3580
< 0.010
< 0.010B
< 0.010
< 0.010
< 0.010
< OiOlOB
< 0.01
< 0.01
< 0.01
< 0.01
..< 0.01
< 0.01
< 0.01B
1.40B
1.40
< 0.005
< 0.003
< 0.001
0.006
0.017
0.049
0.050
< 0.001
0.028
0.003
0.010
< 0.025
0.067
0.16
0.227
1.127
0.317
0.006*
0.014
0.299
2.257*
0.000007 0.010

0.0123
0.00001



0.00196


0.0566
0.169

0.00015

0.003
67.203*
0.041
0.078
0.022
< 0.001
2.138
7.0
24
121
246
20
0.012
0.250
















0.311
0.311



0.00133
0.00378
0.0109
0.0111

0.0062
0.00067
0.0022

0.0149
0.05041
0.0504
0.150
0.0704
0.001
0.0031
0.0664
0.5013
0.0022
0.00067
14.926
0.0091
0.0173
0.0049

0.4745


26.651
54.636
4.442
0.00267
0.0555
                                                    XI-28

-------
                                                                                         o

                                                                                         O
                                                                                                            *T r- co
                                                                                                            vo o o
                                                                                                            »H O r-l
                                                                                                            O O O
                                                                                                            O O O
                                                                                                            O O O
                                                               O


                                                               O
                                                       O O

                                                       o o
                                                  o o o

                                                  d o o
o o o

o o o
o

O
                                                                                                 CMMinm      r-41-1 m PJ in »H
                                                                                                 oooo\oinoo«Homo    t«-
                                                                                                 oooooor-ooooomm
                                                                                                 oooorHoooooo o ui f-

                                                                                                      v v          v v v    v
                                                                                         a-
                                                                                         o
                                    o o
                                    o o
                                    o o
                                    o o
                                                          CM
                                                         I  o
                                    o o o o o o o
                                                                rH      T-l C4 i-l    rH
                                                                                   o

                                                                                   a
                            in
                            T

                            o
                                         t-i fO N *-1 i-l \D f*
                            __   .  ._>o«-
-------
                     c-    in      iM er>
                     •-I    ro eg   in CM
                     o    o -I
                     o   o in
                     o   o *-<
                     o   o o
                          o o    o o
            s
            in
            o
                       rHco* o co *  ro in *  in
                               • S
                     oooinoocMooenooooo

                        v       v       vv    vvvv
                     Or^r»* ocn*  cnm*  incM»Hner>


                     CMOCOHOOrHOO'S'OOOOin

                     OOOVOOOCMOOmOOOOO

                        V       V          VVVVV
tO (u
                                                                   XI-3,0

-------
                                       CM
                                     in vo in   oo
                                     in CM o   t-(
                                     i o 1-1   o
                                     o o o'   o
                               in            in
                               o            o in
                          co   o in in t— co o >-<
                             lD
                             in
                                  ON *H CO
                                  n CM in
                                  c*> co o
                          in
                               in           in
                               o           o o
                               o    in oo in o «-)
                          VOtHOOOCOfOOOt-I
                             "Q*   <(j« 00 f»4

                               V S      V V


                                       CO
                                     ^-

                                     3S
                                       O O
                                               CN
                                               O
                                                •

                                               O
gi-
                               in           in
                               o           o in
                          o   o in o r- co o *-i
     in m
     n rt
     o o
                                               CM
                                               o
                                               o
                               in
                               o in         f- o
                               ooini-(incM>-)
                               §
             in
             o o
   in o <-) in o i-<
O O O

v v
                                        * O O f

                                         v v
                                                                       XI-31

-------
                                                   TABLE 11-6 (Com)
                                      GLASS ENCAPSULATED AND CERAMIC PROCESS WASTES
                                                    (PLANT ID# 31072)
Stream Identification
Flow Rate Liters/Hr
Duration Hours/Day
Sanple ID No.

TOXIC ORGANICS
mg/1     kg/day
Ceramic Ball Mill
0.394
24
03740
 04 Benzene
 23 Chloroform
 30 1,2 Transdichloroethylene
 38 Ethylbenzene                  Not
 44 Methylene Chloride            Analyzed
 66 Bis (2-ethylhexyl) Phthalate
 68 Di-N-Butyl Phthalate
 70 Diethyl Phthalate
 84 Pyrene
 86 Toluene
 87 Trichloroethylene
Total Toxic Organics
114 Antimony
115 Arsenic
117 Berylium
118 Cadmium
119 Chromium
120 Copper

122 Lead
123 Mercury
124 Nickel
125 Selenium
126 Silver
127 Thallium
128 Zinc
Total Toxic Metals

NON-TOXIC METALS

    Aluminum
    Barium
    Boron
    Calcium*
    Cobalt
    Iron
    Magnesium*
    Manganese
    Molybdenum
    Sodium*
    Tin
    Titanium
    Vanadium
    yttrium
Total Non-Toxic Metals

    pH
    Temperature °C
121 Cyanide, Total
    Oil & Grease
    Total Organic Carbon
    Biochemical Oxygen Demand
    Total Suspended Solids
    Phenols
    Fluoride
< 0.013
. 0.0121**
< 0.02
0.02
0.237
0.067
1.10
< 0.001
0.191
< 0.002
< 0.001
< 0.001
170.00
171.63
30.5
51700.
0.337
1750.0*
4.080
11.20
26.7*
0.174
13.6
466.0*
62.5
91.5
17.900
2.280
51934.
9.7
25
< 0.005
NA***
279
< 1
1010
< 0.005 •
1.15

0.0000001

0.0000002
0.000002
0.00000063
0.00001

0.000002



0.0016
0.00161
0.00029
0.489
0.000003
0.0165
0.000038
0.00011
0.00025
0.0000016
0.00013
0.0044
0.0006
0.00087
0.00017
0.000022
0.4912




0.000264

0.00955

0.0000011
mg/1      kg/day
Ceramic Line Treatment
1232
8
03741
                              Not
                              Analyzed
0.002
< 0.002
0.001
0.007
0.007
0.031
0.107
< 0.001
< 0.005
< 0.002
0.005
< 0.001
0.355
0.515
0.201
158.0
0.554
9.52*
0.181
0.155
2.2*
0.050
6.84
28.2*
2.05
53.1
0.160
0.006
221.3
6.4
24
< 0.005
44.60
116
17.9
214
< 0.005
1.15
0.00002

0.00001
0.000069
0.000069
0.00031
0.00105



0.000049

0.00345
0.00503
0.00198
1.557
0.00546
0.09383
0.00178
0.00153
0.02168
0.00049
0.0674
0.278
0.0202
0.523
0.00158
0.000059
2.181



0.4395
1.143
0.176
2.109

0.0113
 * Metals Not Included In The Totals
 **I-Interference present
 *** NA-not analyzed
                    XI-32'

-------
                                              TABLE 11-7
                                    TANTALUM SLOG PROCESS WASTES
                                          (PLANT ID# 09062)
 Stream Identification
 Flow Rate Liters/Hour
 Duration Hours/Day
 Sample 10 Mo.

 TOXIC ORGANICS

  04 Benzene
  23 Chloroform
  44 Methylene  Chloride
  45 Methyl chloride
  66 Bis(2-ethylhexyl)Phthalate
  68 Di~N-Butyl Phthalate
  70 Diethyl Phthalate
  86 Toluene
  87 Tridiloroethylene
 Total Priority Organics

 114 Antimony
 115 Arsenic:
 117 Beryllium
 118 Cadmium
 119 Chromium
 120 Copper
 122 Lead   :
 123 Mercury
 124 Nickel
 125 Selenium
 126 Silver
 127 Thallivim
 128 Zinc
 Total Toxic Metals

 NON-TOXIC M3TALS

     Aluminum
     Barium .
     Boron
     Calcium*
     Cobalt I
     Iron
     Magnesium*
     Manganese
     Molybdenum
     Sodium*
     Tin    :
     Titaniisn
     Vanadium
     Yttrium
 Total Non-Toxic Metals
     Temperciture °C
 121 Cyanide,  Total
     Oil  & Ofrease
     Total Organic Carbon
     Biological  Oxygen Demand
     Total Suspended Solids
     Phenols
     Fluoride
  mg/1    kg/day
  Incoming Water

  24
  03759
  0.001
  0.005
  0.01
  0.01
  0.01
  0.05
  0.03
  0.001
  0.11
  0.01
  0.006
  0.05
  0.14
  0.35
  0.14
  0.02
  0.09
 13.06*
  0.01
  0.37
  1.52*
  0.01
  0.03
  9.64*
  0.01
C 6.01
  0.02
  0.01
 24.84

  8.1
  24
C 0.005
  0.000
  4
  0.000
  0.20
< 0.001
  0.49
rng/1      kg/day
Bar And Rack Wash
114
24
03761
                       Not
mg/1      kg/day
Total Raw Waste
3298
24
03760
                                           Not
mg/1      kg/day
Final Effluent
3298
24
03758
                                                                .
                                                             < O.Olf
                                                               1.3CT
                                                  0.10
Analyzed
< 0.001
< 0.005
< 0.01
C 0.
' 0.
0.
0.
<. 0.
0.
0.
0.
<0.
0.
0.
5.
0.
0.
4.
0.
2.
0.
0.
0.
5.
0.
0.
0.
0.
19.
7.
24
0.
0.
2
75
2.
C 0.
'8.
01
24
04
06
001
37
005
017
05
05
777
03
02
18
64*
02
53
53*
53
07
72*
02
15
09
01
36
8

005
000


18
001
000

0.
0.
0.

0.

0.

0.

0007
0001
0002

001

00005

00014
0.00219
0.
0.
0.
014
00005
0005 J
0.013
0.
0.
0.
0.
0.
0.
0.
0.
0.
0.
0.




0.
0.
0.

0.
00005
007
0015
0015
0002
016
00005
0004
0002
00003
05398




005
21
006

02
Analyzed
< 0.001
< 0.005
< 0.01
< o.
0.
0.
0.
< 0.
0.
< 0.
0.
< 0.
0.
1.
0.
0.
0»
4.
0.
2.
0.
4.
0.
18.
0.
0.
0.
< 0.
30.
7.
24
< 0.
0.
125
75
56
< 0.
1.
01
04
85
03
001
08
005
009
05
17
219
51
01
09
18*
01
38
43*
10
03
67*
03
02
01
01
38
0

005
000



001
27

0.
0.

003
067
0.0024

0.

0.

0.
0.
0.
0.

0064

0007

013
0925
04
0008
0.0071
0.
0.
0.
0.
0.
0.
1.
0.
0.
0.

2.




0.
5.
4.

0.
33
0008
19
03
32
0024
48
0024
0016
0008

3988




89
94
43

10
0.
0.
< 0.
0.
0.
< 0.
1.
< 0.
< 0.
< 0.
< 0.
0.
024
013
01
01-U
02?
oP
332
001
005
010
01
05
0.06
0.
< 0.
0.
< 0.
05
001
15
005
0
0

0
0
0

0

.0017
.1017

.004
.0048
.004

.012

< 0.006
< 0.
0.
0.
0.
0.
0.
05
29
60
97
02
08
11.13*
< 0.
"0.
1.
4.
0.
122.
0.
0.
0.
0.
140.
7.
24
< 0.
0.
109
62
1.
< 0.
4.
01
68
28*
26
04
33*
02
01
03
03
75
7

005
000

0
0
0
0
0
0

0
0
0

.023
.0478
.077
.0016
.006
.88

.054
.10
.34
0.0032
9
0
0
0
0
11




.68
.0016
.0008
.0024
.0024
.1398




8.63

0
001
700
4
0

.91
.08

0.37
 * Metals Not Included In Totals
B
 .-concentration found in Sample Blank
                                                        XI-33

-------
Tables 11-5 through 11-7 present sampling analysis data for detected
parameters in raw process wastewaters and treated effluents for
those plants sampled within the capacitor subcategory.  Pollutant
parameters are grouped according to toxic organics, toxic metals,
non-toxic metals, and other pollutants.  Total pollutant concen-
trations are presented as well as mass loadings of those pollu-
tant parameters.  Mass Loadings were derived by multiplying con-
centration by the flow rate and the hours per day that a particu-
lar process is operated.  Some entries were left blank for one of
the following reasons:  the parameter was not detected; the con-
centration used for the kg/day calculation is less than the lower
quantifiable limits or not quantifiable.  The kg/day is not inclu-
ded in totals for calcium, magnesium, and sodium.  The kg/day is
not applicable to pH.  Totals do not include values preceded by
"less than".

The following conventions were followed in quantifying the levels
determined by analysis:

     Trace Levels - Pollutants detected at levels too low to be
     quantitatively measured are reported as the value preceded
     by a "less than" (<) sign.  All other pollutants are repor-
     ted as the measured value.

     Mass Load - Total daily discharge in kilograms/day of a par-
     ticular pollutant is termed the mass load.  This figure is    -
     computed by multiplying the measured concentration (mg/1) by
     the water discharge rate expressed in liters per day.

     Sample Blanks - Blank samples of organic-free distilled water
     were used to detect contamination of water samples.  These
     sample blank data are not subtracted from the analysis results,
     but rather, are shown as a (B) next to 1:he pollutant found in
     both the sample and the blank.  The tables show figures for
     total measurable jto'xic organics, toxic and non-toxic metals,
     total suspended solids and fluorides.

.    Blank Entries - Some entries were left blank for one of the
     following reasons:  the parameter was not detected; kg/day
     is not given when the concentration is lower than the mini-
     mum detectable limit or not quantifiable; kg/day is not given
     and not included in totals for calcium,;magnesium, and sodium;
     kg/day is not applicable to pH.

Table 11-5 presents sampled results from a plant producing ceramic
and wet tantalum slug capacitors.  This facility is unique in that
it produces its own precious metal inks, and the waste treatment
system is shared by other processes.  All organics detected were at
trace levels.  The ink manufacturing process showed higher levels
of "toxic and non-toxic metals than did the ceramic ball mill
operation and the tantalum foil operation.
                              XI-34

-------
Table 11-6 presents sampling results from a plant producing glass
encapsulated capacitors and ceramic capacitors.  The glass capaci-
tor manufacturing operations discharge directly to the municipal
treatment system with no treatment.  The glass line produces waste
associated with lead cleaning, inspection, and glass cutting.  The
glass cutting operation produces high concentrations of total lead.
The ceramic line discharges first to a settling basin and then to the
municipcil treatment system.  Wastewater in the settling basin in-
cludes ceramic capacitor lead cleaning, cooling tower blowdown,
boiler blowdown, and water deionizer  backwash.  The ceramic line
produces significant quantities of barium.

Table 11-7 presents analysis results from a plant producing dry
tantalum slug capacitors.  The waste treatment system handles
manufacturing process wastewater, cooling tower and boiler blow-
down, arid water deionizer backwash.  The raw waste was observed
to be quite cloudy, and the effluent clarity was variable.  Most
of the dry tantalum slug capacitor manufacturing processes are dry,
but the wet process of reforming and forming has a discharge rate
of approximately 19 liters/hr (5 gal/hr).  This facility utilized a
rack washer that cleaned the stainless steel bars to which the capa-
citors were soldered as they went through all manufacturing process
steps.  |
        i                  :
Summary of Raw Waste Stream Data

Table 11-8 summarizes pollutant concentration data for capa-
citor (excluding ball mill wastewaters) raw waste streams sampled
in the capacitor subcategory.  Minimum, maximum, mean, and flow
weighted mean concentrations were determined using all raw waste
streams sampled.  The flow weighted mean concentration was cal-
culated by dividing the total mass rate (ing/day) by the total flow
rate (liters/day) for all parameters sampled.

Table 11-6 presents the raw waste concentrations of pollutants
analyzed (excludes toxic organics) for a batch Ball Mill Wash
(Plant ID 31072, Stream-03740).  The settling step effluent data
is also presented.  The difference in flow rate represents flow
from another ball mill wash and contact cooling waters that were
not sampled.  A sludge sample was not taken so a mass balance
approach cannot be used to determine the concentrations in the
unsamplesd streams.

Potenticil pollutant parameters were selected from Table 11-6 and
Table 11-8 for sampled raw waste streams based upon their occur-
rence arid concentration in the sampled streams.  Table 11-9 pre-
sents the flow weighted mean pollutant concentrations of capaci-
tor raw waste streams and a ball mill raw waste stream (Plant
31072, Stream 03740).  Those pollutants not detected or at trace
levels in the sampled streams have been listed in Table 11-10 for
capacitor (excluding ball mill waste) raw waste and in Table 11-11
for ball mill wastes.
                                XI-35

-------
                                        TABLE 11-8
                                  CAPACITOR SUBCATEGORY
               SM"MAR¥ OF CAPACITOR RAW WASTE DATA  (EXCLUDES BALL MILLING)
                                 Min. Cone.      Max. Cone.
Parameter                          mg/1            mg/1

TOXIC ORGANICS

Oil  1,1,1-trichlorethane      < 0.01            0.014;
023  Chloroform                < 0.01            0.047
044  Methylene chloride        < 0.01            0.09 |
087  Trichlorethylene            0.06            0.27
                 Mean Cone.
                   mg/1
                 0.012
                 0.0154
                 0.033
                 0.165
               Flow Weighted
               Mean Cone.
                  mg/1
               0.0129
               0.0125
               0.0159
               0.0323
TOXIC METALS
114  Antimony                  < 0.001
115  Arsenic                   < 0.003
119  Chromium                  < 0.001
120  Copper                     . 0.016
122  lead                      < 0.001
124  Nickel                    < 0.001
126  Silver                    < 0.001
128  Zinc                      < 0.001

NON-TOXIC METALS

     Aluminum                  < 0.001
     Barium                    < 0.001
     Boron                       0.09
     Calcium                     0.92
     Iron                        0.038
     Magnesium                   0.263
     Manganese                   0.001
     Sodium                      1.741
     Tin                         0.002
     Titanium                   < 0.001
     Vanadium                   < 0.001

     Phenols                    < 0.005
     Oil and Grease              0.0
     Total Suspended Solids      0.0
     Total Organic Carbon        2.0
     Biochemical Oxygen Demand   1.7
     Fluoride                    0.1
     pH                          3.2
  0.093
  0.012
  1.06 ,
  0.85 ,
 32.0  ;
  0.37 i
  0.055
  5.5  '
  5.03;
  3.025,
  0.8  '
 11.7671
  2.53
  3.311
  4.10 '
370.64 I
  0.315
  2.77
  0.09

  0.27
348.0
218.0  '
125.
 75.0
  8.0
  8.9
0.0215
0.0055
0.180
0.241
4.138
0.07
0.0155
0.764
0.00880
0.00463
0.05672
0.056072
1.2844
0.0683
0.0162
0.2354
0.887
0'.628
0.255
5.782
0.866
1.649
0.589
61.0
0.098
0.406
0.018
0.074
43.5
72.9
42.313
29.29
1.724
6.4
0.57041
0.9627
0.31746
6.51178
1.7997
1.438
2.2499
122.31
0.04341
0.8425
0.01763
0.0053
9.1997
136.7
88.538
55.438
4.512

                                       XI-36

-------
                        TABLE 11-9

                   CAPACITOR SUBCATEGORY
                 SUMMARY OF TOTAL RAW WASTE
                  (Includes Ball Milling)
Parameter

120.  Copper
122.  Lead
128.  Zinc
      Aluminum
      Barium
      Iron
      Manganese-
      Total Suspended Solids
      Oil & Grease
Flow Weighted
Mean Concentration (mg/1)

     0.818
     1.874
     0.359
     0.835
     6.305
     2.627
     3.28
     130.6
     9.2
                              XI-37

-------
                                             TABLE 11-10         '
                                POLLUTANT PARAMETERS NOT DETECTED IN
                                     CAPACITOR RAW WASTE STREAMS i
                                    (EXCLUDING BALL MILL WASTES) !
TOXIC CRGANICS
 2. Acrolein                                    61.
 3. Acrylonitrile                               63.
 5. Benzidine                                   71.
 6. Carbon Tetrachloride(Tetrachloromethane)    73.
 7. Chlorobenzene                               74.
 8. 1,2,4-Trichlorobenzene                      78.
 9. Hexachlorbenzene                            79.
10. 1,2-Dichlorethane                           81.
12. Bexachloroethane                            82.
13. 1,1-Dichloroethane                          83.
14. 1,1,2-Trichlorethane                        85.
15. 1,1,2,2-Tetrachloroethane                   88.
16. CWLoroethane                                89.
17. Bis(ChloronBthyl)Ether                      90.
18. Bis(2-Chloroethyl Vinyl Ether (Mixed)       91.
19. 2-Chloronaphthalene                         92.
22. Parachlorometa Cresol                       93.
25. 1,2-Dichlorobenzene                         94.
26. 1,3-Dichlorobenzene                         95.
27. 1,4-DicW.orobenzene                         96.
29. 1,1-Dichloroethylene                        97.
31. 2,4-DicW.orphenol                           98.
32. 1,2-Dichloropropane                         99.
33. If2-Dichloroprc^ylene(lf3-Dichloropropene) 100.
34. 2,4-Dinethyphenol                          101.
35. 2,4-Dinitrotoluene                         102.
37. l,2-Diphen7lhydrazine                      103.
40. 4-ChlorophenylEhenyl Ether                 104.
41. 4-Broirophenyl Ether                        105.
42. Bis (2-Chloroiscpropyl) Ether                106.
45. Methyl Chloride (Chloronethane)            107.
46. Methylbromide (Bromanethane)               108.
47. Bronoforra (Tribromomethane)                109.
49. Trichlorofluoronethane                     110.
50. Dichlorodifluororaethane                    111.
51. Chlorodibroncmethane                       112.
52. Hexachlorobutadiene                        113.
53. Hexachlorocydopentadiene                 . 129.
54. Isophorone
56. Nitrobenzene
N-Nitrosod imenthylamine
N-Nitrosod i-N-Propylamine
Dimethyl Phthalate
Benzo(A)Pyrene (3,4-Benzo-Pyrene)
3,4-Benzofluoranthene(Benzo(B)Fluoranthene)
Anthracene
1,12-Benzoperylene (Benzo( GHI) -Perylene)
Phenanthrene
1,2,5,6-Dibenzathracene(Dibenzo(A,H) Anthracene)
Indeno(1,2,3-DC)Pyrene(2,3-o~PhenylenePyrene)
Tetrachloroethylene
Vinyl Chloride (Chloroethylene)
Aldrin       -,
Dieldrin
Chlordane (Technical Mixture and Metabolites)
4,4'-DDT
4,4'-DDE(P,P'-DDX)
4,4'-DDD(P,P'-TDE)
Alpha-Endosulfan
Beta-Endosulfan
Endosulfan Sulfate
Endrin
Endrin Aldehyde
Heptachlor
Heptachlor Epoxide(BHC-hexachlorocyclohexane)
Alpha-BHC
Beta-BHC
Gamma-BHC(Lindane)
Dslta-BHC(PCB-Polychlorinated Biphenyls)
PCB-1242(Arochlor 1242)
PCB-1254(Arochlor 1254)
PCB-1221(Arochlor 1221)
PCB-1232(Arochlor 1232)
PCB-1248(Arochlor 1248)
PCB-1260(Arochlor 1260)
PCB-1016(Arochlor 1016)
Toxaphene
2,3,7,8-Tetrachlorodibenzo-P-Dioxin(TCDD)
Xylenes
Alkyl Epoxides
                                             XI-38

-------
                   TABLE 11-10 (Continued)
          POLLUTANTS ONLY DETECTED AT TRACE LEVELS
      CAPACITOR (EXCLUDING BALL MILL WASTE) RAW WASTE
TOXIC ORI3ANICS

01   Acenaphthene
04   Benzene
21   2,4,6-Trichlorophenol
24   2-Chlorophenol
28   3,3-Dichlorobenz idine
36   2,6-Dinitrotoluene
38   Ethylbenzene
43   Bis(2-Chloroethoxy) Methane
48   Dichlorobronethane
58   4-Nitrophenol
64   Pentachlorophenol
65   Phenol
66   Bis (2-ethylhexyl) Phthalate

TOXIC METALS

115  Arsenic
117  Beryllium
123  Mercury
127  Thallium
 67.  Butyl Benzyl Phthalate
 68.  Di-N-Butyl Phthalate
 69   Di-N-Cctyl Phthalate
 70   Diethyl Phthalate
 72   1,2-Benzanthracene
 75   11,12-Benzofluoranthene
 76   Chrysene
 77   Acenaphthylene
 80   Fluorene
 84   Pyrene
 86   Toluene
 87   Trichloroethylene
112   PCB-1016

NON-TOXIC METALS

      Molybdenum
                                   XI-39

-------
                   TABLE  11-10  (Continued)
DETECTED IN CAPACITOR  (EXCLUDING BALL MILL  WASTES)  RAW WASTE STREAMS
          AT LEVELS TOO LOW  TO  REQUIRE TREATMENT*
          Parameter
     Toxic Metals

     118  Cadmium
     121  Cyanide
Mean Cone.
  mg/1
 0.005
<0.0!05
     Non-Toxic Metals

          Cobalt
          Yttrium
 0.03
 0.004
* These parameters do not require treatment because  1)  the  raw
  waste concentration is less than the daily maximum figure (See
  Table 11-12), or 2) no performance data  is; available  for  treat-
  ment of these parameters.
                               XI-4O

-------
                                          , TABLE 11-11
                                POLLUTANT PARAMETERS NOT ANALYZED IN
                                        BALL  MILL RAW WASTE
                                   (PLANT ID  31072,  STREAM 03740)
TOXIC ORGANICS

 1. Acenaphthene
 2. Acrolein
 3. Acrylonitrile
 4. Benzene
 5. Benzidine
 6. Carbon Itetrachloride (Tetrachloromethane)
 7. Chlorobenzene
 8. 1,2,4-Trichlorobenzene
 9. Hexachlorbenzene
10. 1,2-Dichlorethane
11. 1,1,1,-iTrichloroethene
12. Hexachloroethane
13. 1,1-Dichloroethane
14. 1,1,2-Trichlorethane
15. 1,1,2,2-Tetrachloroethane
16. Chlqroethane
17. Bis(Chloromethyl)Ether
18. Bis(2-Chloroethyl)Ether
19. 2-Chloroethyl Vinyl Ether  (Mixed)
20. 2-Chlorcaiaphthalene
21. 2,4,6-Trichlorophenol
22. Parachloroneta  Cresol
24. 2-Chlorophenol
25. 1,2-Dichlorobenzene
26. 1,3-Dichlorobenzene
27. 1,4-Diehlorobenzene
28. 3,3'-Dichlorobenzidine
29. 1,1-Dichloroethylene
30. 1,2-Trains-Dichloroethylene
31. 2,4-Dichlorphenol
32. 1,2-Dichloropropane
33.1,2-Dichloropropylene(1,3-Dichloropropene)
34. 2,4-Dimethylphenol
35. 2,4-Dinitrotoluene
36. 2,6-Dinitrotoluene
37. 1,2-Diphenylhydrazine
38. Ethylbenzene
39. Fluoranthene
40. 4-ChloirphenylPhenyl Ether
41.  4-BronophenylPhenyl Ether
 42. Bis(2-Chloroisopropyl)Ether
 43. Bis(2-Oiloroethoxy)Methane
 45.  Methyl Chloride (Chloronethane)
46. roethylbromide (Broroomethane)
47. Bromoform (Tribromemethane)
48. Dichlorobromomethane
49. Trichlorofluoromethane
50. Dichlorodifluoromethane
51. Chlorodibrononethane
52. Hexachlorobutadiene
53. Hexachlorocyclopentadiene
54. Isophorone
55. Naphthalene
56. Nitrobenzene
57. 2-Nitrophenol
58. 4-Nitrophenol
59. 2,4-Dinitrophenol
60. 4,6-Dinitro-o-cresol
61. N-Nitrosodimenthylamine
62. N-Nitrosodiphenylamine
63. N-Nitrosodi-N-Propylamine
64. Pentachlorophenol
67. Butyl Benzyl Phthalate
69. Di-N-Cctyl Phthalate
70. Diethyl Phthalate
71. Dimethyl Phthalate
72. 1,2-Benzanthracene(Benzo(A)Anthracene >
73. Benzo(A).Pyrene  (3,4-Benzo-Pyrene)
74. 3,4-Benzofluoranthene(Benzo(B)Fluoranthene)
75. 11,12-Benzofluoranthene(Benzo(K)Fluoranthene)
76. Chrysene
77. Acenaphthylene
78. Anthracene
79.1,12-Benzoperylene(Benzo(GHI)-Perylene)
80. Fluorene
81. Phenanthrene
82. l,2,5,6-Dibenzathracene(Dibenzo(A,H)Anthracene
83. Indeno(l,2,3-DC)Pyrene(2,3-o-PhenylenePyrene)
84. Pyrene
85. Tetrachloroethylene
88.'Vinyl Chloride  (Chloroethylene)
89. Aldrin
90. Dieldrin
91. Chlordane (Technical Mixture and  Metabolites)
                                           XI-41

-------
                                      TABLE 11-11 (Continued)
                               FOLLOTANT PARAMETERS NOT ANALYZED FOR
                                        BALL MILL RAW WASTE    ;
                                   (PLANT ID 31072, STREAM 03740)
 92. 4,4'-DDT
 93. 4,4'-DDE(P,PI-DDX)
 94. 4,4'-DDD(P,P'-TDE)
 95. Alpha-Endosulfan
 96. Beta-Endosulfan
 97. EndosoLfan Sulfate
 98. Endein
 99. Endrin Aldehyde
100. Heptachlor
101. Hepfcachlor Epoxide (BHC-Hexachlorocyclo-
     hexane)
102. Alpha-BHC
103. Beta-BHC
104. Gamma-BHC(Lindane)
105. Delta-BHC(PCB-Polychlorinated Biphenyls)
106. PCB-1242(Arochlor 1242)
107. PCB-1254(Arochlor 1254)
108. PCB-1221(Arochlor 1221)
109. PCB-1232(Arochlor 1232)
110. PCB-1248(Arochlor 1248)
111. ,PCB-1260(Arochlor 1260)
112. PCB-1016(Arochlor 1016)
113. Toxaphene
129. 2,3,7,8-Tetrachlorodibenzo-P-Dioxin (TCDD)

     Xylenes
     Alkyl Epoxides
                                                 XI-42

-------
         TABLE 11-li (Continued)
POLLUTANTS DETECTED ONLY AT TRACE LEVELS
          BALL MILL RAW WASTE
TOXIC METALS
     114.
     117.
     123.
     125.
     126.
     127.
Antimony
Beryllium
Mercury
Selenium
Silver
Thallium
                     XI-43

-------
                    TABLE  11-11 (Continued)
          POLLUTANT PARAMETERS DETECTED AT  LEVELS
              TOO  LOW TO BE EFFECTIVELY TREATED*
     Toxic Metals

     115.  Arsenic
     118.  Cadmium
     124.  Nickel
Mean Concentration

     0.012 (I)
     0.02
     0.191
  These parameters do not require treatment because 1)  the  raw
  waste concentration is less than the daily maximum figure  (See
  Table 11-12), or 2) no performance data is available  for  treat-
  ment of these parameters.

I - Lab Interference                      ;
                                XI-44

-------
Treatment-In-Place

The seven plants visited in the capacitor subcategory have a wide
range of treatment-in-place.  One plant had no waste treatment;
another plant had no wet processes and no wastewater discharge.  The
treatment-in<-place observed at the remaining five plants is discussed
below.

     Plant 19116 (Reference Table 11-5 for sampling data), Ceramic,
     Tantalum Slug, and Tantalum Foil Capacitors

     This plant produces a variety of capacitors, three types of
     which result in wastewater discharges.  The facility is quite
     old, but the plumbing for the manufacturing process is rela-
     tively new.  Many manufacturing operations are manual, which
     results in variable discharge rates and pollutant concentra-
     tions.  All manufacturing process wastewater discharges are
     mixed in a 11,355 liter  (3,000 gallon) settling/mixing tank
     which receives wastes from other manufacturing processes as
     well.  An automatic pH sensor activates sulfuric acid or
     sodium hydroxide pumps to adjust the pH before the treated
     flow is discharged through a weir equipped with an automatic
     flow recorder.  Since there is no provision for sludge settling
     and removal, the overall system only pH adjusts the wastewater
     prior to discharge.

     Plant 31072  (Reference Table 11-6 for sampling data), Glass
     Encapsulated and Ceramic Capacitors

     Both types of capacitors produced at this plant result in
     wastewater discharges.   The glass capacitor line dischar-
     ges directly to the municipal treatment system without treat-
     ment.  The ceramic capacitor line has two discharges which
     share a settling basin with boiler blowdown, cooling tower
     blowdown, and water deionizer backwash.  There is no pH adjust-
     ment or chemical addition of any kind.  There is a relatively
     infrequent clean-out  (twice per year) of the settling basin.
     The raw process wastewater samples were collected prior to
     mixing with  the non-process wastewater discharges.

     Plant 09062  (Reference Table 11-7 for sampling data),  Dry
     Tantalum Slug Capacitors

     This facility has  one  process line and produces dry  tantalum
     slug capacitors.   Basically  the manufacturing process  steps
     utilize very little water  .(977  liters or 258 gph), but the
     ancillary operations  produce a  large volume of water by com-
     parison.  The ancillary  operations  include  cooling tower  blow-
     down, boiler blowdown, and water  deionizer  backwash.   The  total
                                 XI-45

-------
      raw waste sample includes all wastes prior to settling and pH
      adjustment.  The settling basin is cleaned infrequently (approx-
      imately twice per year) and the aerator/mixer causes some
      settled solids to become re-entrained and subsequently dis-
      charged.  The pH adjustment is automatically performed by ad-
      ding either sulfuric acid or sodium hydroxide directly into
      the final outfall.  The pH adjustment mechanism is primarily
      for the blowdown and backwash operations.  The process line
      effluent has a steady and nearly neutral pH.  Tantalum slug
      process discharge appears cloudy due to the presence of man-
      ganese nitrate.

      Plant 40082, Aluminum Electrolytic and Tantalum Foil Capacitors

      This facility producing both aluminum electrolytic and tanta-
      lum foil capacitors is quite small and does not contain the
      major wet process of aluminum etching which is normally asso-
      ciated with aluminum electrolytic capacitor manufacturing.
      However, this plant does perform the aluminum electrolytic
      formation reactions for aluminum electrolytic capacitor man-
      ufacture.  Wastewaters from this process are characterized
      by high solids content and slightly acidic pH.  This facili-
      ty discharges one of its process lines directly to a munici-
      pal treatment system and the other to a sand filter which
      discharges to a drainage ditch.   The tantalum foil line dumps
      spent ammonium bromide and methanol directly into  the munici-
      pal treatment system without treatment.

      Plant 41154, Ceramic Capacitors

      This facility produces ceramic capacitors and uses incoming
      municipal water for ball milling and mixing.   Wastewater
      from these processes is  treated  in a portable sand filter
      and discharged to a municipal  treatment system.

POTENTIAL POLLUTANT PARAMETERS

Potential pollutants present  in wastewater frpm the capacitor
(excluding ball mill wastes)  raw waste  that might  require  treat-
ment  prior to  discharge  include:
          120  Copper
          122  Lead
          128  Zinc
               Aluminum
               Barium
Iron
Manganese !
Total Suspended Solids
Oil & Grease
pH
Potential pollutants present in raw wastewater from a sampled ball
mill wash (Plant ID 31072) are:
                                 XI-46

-------
          119  Chromium
          128  Zinc
               Total Suspended
                    Solids
122  Lead
     Barium
This wash was mixed with an unsampled ball mill waste stream prior
to settling.  The settling treatment step at Plant ID 31072 cannot
be fully evaluated after review of sampling data.  (See Table 11-6,
Plant ID 31072, Stream 03741, Ceramic Line Treatment).  Potential
pollutcints present in settling effluent at concentrations requir-
ing further or additional treatment include:

               Barium
               Titanium
               Oil & Grease
               Total Organic Carbon
               Total Suspended Solids

Tables 11-10 and 11-11 lists pollutants other than those selected
above that were analyzed in capacitor (excluding ball milling)
and the ball mill process raw waste streams sampled for the
capacitor subcategory.  Each pollutant is listed in the appro-
priate grouping as being not detected (organics were not analyzed
in the case of ball milling), detected only at trace levels, or
detected at levels too low to be effectively treated prior to
discharge.

APPLICABLE TREATMENT TECHNOLOGIES

Based on the selected pollutant parameters and treatment-in-place
(See Table 11-2) in the capacitor industry, the following tech-
nologies are applicable for wastewater treatment:

     - 1   pH Adjustment
          Chemical precipitation and clarification
          Oil removal
          Sludge dewatering
          Polishing Filtration

These specific treatment components are discussed in detail in
Section XII of this report.

Recommended Treatment Systems

Three levels of treatment are proposed for the capacitor manufac-
turing facilities.  Figures 11-7 through  11-11 present schematic
diagrams of the three levels of treatment proposed for capacitor
facilities.  Level 1 represents the minimum treatment found for
those facilities that had any treatment and consists of pH adjust-
ment prior to discharge and for ball mill discharge, pH adjustment
and settling.  Capacitor manufacturing operations often result in
pH fluctuations that could fall outside pretreatment regulations.
                               XI-47

-------
   X
   a
                   8


 o
 in
HH


i
4J
(0
3
•r-i
a
0) -H

co IH
                   2
                   a
                  I
                   a

                   CO
                                          D

                                          M
>H
OS

81
EL) W
EH S

< w
&. J

o
^3
                   I
                         XI-48

-------
                                            00
                                            I
                                            D
                                            O
 T..
S  <"^S
S  1^«2S
   * 9'
     a> i
5
"S-1
5"H
•3s
"fi
                                                  W
                                                  
-------
                      It)
                      a?
•—•*

8
                                                    W
                                                    EH EH
                                                    cn S
                                                    < la
                                                      EH
                                          Pi
03 
-------
   1

                                                                       o
                                                                       •H
                                                                        i
                                                                        ca
                                                                        o
                                                                        M
     ff



    "si
              .
U  OJ  01 -H

S  I -S
o  § -g
ffl     ^
& S  O
r"?  S  ><
o  a ia
                                                                                 en
                                                                                 
< cn  w
Qj rfj  |J
< s
u
   S
                                                                                 05
                                                                                 O
                                                                                 EH
                                                                                 M
                                                                                 O

                                                                                 a,
                                XI-51

-------
   1
 -i   jj
•s   s
»"•*
8
                                                                    CO
                                                                       EH
                                                                  _
                                                                 H < W
                                                                 y s»
                                                                 en
                                                                       co
                                                                 EH S
                                                                 M
                                                                 U (4

                                                                 di «C
                                                                 < CQ
                                                                 CJ
             XI-5 2

-------
The Level 2 treatment systems (See Figures 11-8 and 11-9) contain
chemical precipitation and sedimentation (for solids and metals
removal)/ neutralization, vacuum filtration and contract hauling
of the dewatered sludge (an oil skimmer is included for treatment
of capacitor raw waste excluding ball milling).  This type of sys-
tem would lower effluent concentrations for all of the visited
facilities.  None of the visited facilities had a Level 2 treat-
ment system presently in-place.

The Level 3 treatment systems (See Figures 11-10 and 11-11) are a
Level 2 treatment system with a polishing filter after the neu-
tralization step.  The polishing filter reduces the total suspen-
ded solids concentration with attendant incidental reduction of
various metals concentrations.

Performance of Observed Treatment Systems

The actual performance of Level 1 treatment systems have been
sampled as in-place technologies for the capacitor subcategory.

Table 11-12 presents effluent analysis data for those plants
which treat manufacturing process wastewater prior to discharge.
Minimum, maximum, mean, and flow weighted mean concentrations
are shown for each potential pollutant parameter previously
selected.  Data from individual effluent streams utilized in the
formation of these tables were presented in Tables 11-5 through
11-7.

Performance of Recommended Treatment Systems

Performance of the recommended treatment systems for capacitor
raw Weistes and ball milling wastes for Levels  1, 2, and 3, are
presented in Table 11-13.  Performance figures are based upon
data from treatment component performance observed in other
industries.  This performance data can be used for the capacitor
Iridustry because of the similarity of the raw  wastes.  Section
XII describes the treatment components and the performance
levels achievable.  Table 11-14 compares the performance for
the recommended treatment systems in Section XII to the obser-
ved treatment performance at visited capacitor and ball mill
facilities.  Table 11-15 presents the daily maximum, 30-day
average  and long-term average pollutant concentrations as ob-
served in other industries for Level 2 and 3 treatment.


Estimated Cost of Recommended Treatment Systems

The determination of estimated costs for recommended treatment  sys-
tem components is discussed in Section XII of  this report.  Tables
11-16 through 11-24 present the estimated costs  for each of the
recommended treatment systems discussed previously.
                             XI-53

-------
                              TABLE 11-12
                         CAPACITOR SUBCATEQORY
               PERFORMANCE OF OBSERVED LEVEL 1 TREATMENT SYSTEMS
Treated Capacitor  (Excluding Ball Mill Wastes) Raw waste - Effluent concentration *
Parameter

120  Copper
122  Lead
128  Zinc
     Aluminum
     Barium
     Iron
     Manganese
     Total Suspended
       Solids
     Oil & Grease
     PH
                    Minimum mg/1   Maximum mg/1   Mean mg/1
0.049
0.05
0.067
0.227
0.02
0.299
0.01
1.0

0
7.0
                                   0.06
                                   0.05
                                   0.29
                                   0.97
                                   1.127
                                   0.68
                                   4.26
                                   20

                                   0
                                   7.7
0.054
0.05
0.18
0.6
0.57
0.49
2.14
10.0

0
7.4
                Flow Weighted
                Mean Concentra-
                tion (mg/1)

                0.053
                0.050
                0.0126
                0.422
                0.837
                0.398
                1.13
                15.
119
122
128
     Treated Ball Milling Raw Waste - Effluent Concentration **
Barium
Total Suspended
  Solids
Chromium
Lead
Zinc
1581
214

0.007
0.107
0.355
*Plant ID 19116 and 09062
**KLant ID 31072
                                    XI-5 4

-------
                        TABLE 11-13
                   CAPACITOR SUBCATEGORY
        PERFORMANCE OF RECOMMENDED TREATMENT SYSTEMS
       I                   '      .'  *

Treated Capacitor (Excludes Ball Milling) Raw Waste - Effluent Concentration
Parameter

120  Copper
122  Lead
128  Zinc
     Aluminum
     Barium
     Iron
     Manganese
     Total Suspended Solids
     Oil & Grease
     pH
Level 1 *
Recommended
Treatment

   NC**
   NC
   NC
   NC
   NC
   NC
   NC
   NC
   NC
   7.0
Level 2
(mg/1)

NC
0.05  -
NC
NA***
NA
0.797
NA
17.8
NC
NC
Level 3
(mg/D

0.368
0.034
NC
NA
NA
0.257
NA
12.7
7.1
NC
                TREATED BALL MILL RAW WASTE
       i            EFFLUENT CONCENTRATION

119  Chromium                   0.007****         NC
122  Lead                       0.107****         0.05
128  Zinc                       0.355****         NC
     Barium                      158****          NA.
     Total Suspended Solids      214****          17.8
                                   NC
                                   0.034
                                   0.247
                                   NA
                                   17.8
   *pH adjustment
  **NC - No change in performance from previous level
 ***NA "• Data is unavailable
****0bserved Treatment - Plant ID 31072
                                  XI-5 5

-------
                                  TABLE  11-14

                             CAPACITOR SUBCATEGORY
                         COMPARISON OF OBSERVED VERSUS
                             RECOMMENDED TREATMENT

             Treated Capacitor Raw Waste (Excludes Ball Milling)
                         Effluent Concentration (mg/1)
                              Level 1*
Parameter                     Observed

120 Copper                    0.053
122 Lead                      0.05
128 Zinc                      0.0126
    Aluminum                  0.422
    Barium                    0.837
    Iron                      0.398
    Manganese                 1.13
    Total Suspended Solids    15
    Oil & Grease              0
    pH                        7.4
                    Level 1
                    Recommended

                    NC**
                    NC
                    NC
                    NC
                    NC
                    NC
                    NC
                    NC
                    NC
                    7.0
                            Ball Milling Raw Waste -
                         Effluent Concentrations (mg/1)
Parameter

119  Chromium
122  Lead
128  Zinc
     Barium
     Total Suspended
       Solids
     pH
Level 1
Observed

0.007
0.107
0.355
158.
214.

9.7
Level 1
Recommended

NA***
NA
NA
NA
17.8

7.0
 *See Table 11-12
**NC - No change in concentration from raw waste
***NA - Data Not Available
                                   XI-5 6

-------
                              £    ro'ro o CM r-I-H o
                           _  0)     .......
                     -U     Q  >    o o o o CM C-. r-
                             t 01
                     sj     ra  nj    m oo ^ CM
                     IH    QSJ    ^^ocomcM
                           l       oooo^ccn
                          CO <               tH


         P          1

         >          a        i


         "^               ^-1=1    CM rH rH I^ 00
         eg               -HX     .....
         C                i6<
         -          ^    ffl*       vor^cM
         S'O        _,    QM    oooor-rHin


5?    ill        •=!    AS    oHo'ocg-u?


  '       ff!


         ^^              ^-    rorninu,
                           .  .,    CM vo rH vo vo in

       .-
-------
      o
      If}
      CO
V0
                  o\
            CO
            in
            in
            VO
                           tn
                           in
                           in
                           in
ov
CM
in
 •

-si*
CM
CN
                                                     VD
               00
               cn
               V0
                                                     CN
in
r-
m
01
vo
•~>    vo
                  in
                                en
                                o\
                                vo
      s
      V0
      00
               CN
               in
                                                     oo
                      XI-5 8

-------
CO
      r-
      m
      •"31
      oo
             o
             o
o    o%
in    r-t
in    cri
r-
a\
CN
 •
r-
r--
vo
                                  oo
                                  ro
                                  oo
                                  in
vo
  «

cr>
                                                        o
                                                        CM
                                                        in
                               CM

                               CN
                                                         oo
                                                         in
                                                         CN
                                                          «

                                                         o
                                                         CTl
                                                              CN
      CO
      vo
            ro
oo
rH '•• .   •
>_    VO


o    cn
fH    CTl
o    o
in    M
                         in
                         r-t
                         CN
                          •

                         O
                         r^
                         CM
         in
         oo
         CN
         00
         O>
         •H
         CN
                                               cn
o
o
                                     in
                               oo      •
                               oo    CN
                               00    O
                                      XI-5 9

-------
vo
CO
r>
oo
iH
 •
vo
r>
oo
o\
                 CO
                 ro
CM
 •

in
                         
-------
VO    CN
vo
      vo
      10
      Cn
oo
 •

VO

^
rH
00
                          in
                          CM
                          vo
                          CN
                          00
                          cr>
vo
•H
o
 •
in
rr
oo
10
                                              o
                                              CN
                                              ro
                                              ••a-
                                              CM
                          CO
                          CN
                          00
                           •

                          a\
                          in
                          in
                          •*
                          CO
in

in
rH     «
—'    en
      CJ

      s-
vo
      ro
      oo
      en
                 CN
                 CM
                 CN
                 CP\
                 CN
                 CO
s
en

en

vo
en
                    CN
                    en
                    en
                    CN
                    r-
         cn
         vo
         in
          •
         in
         'S'
         CN
              en
              oo
                                                    CO
                                                    in
                                                    ro
                        XI-61

-------
        co    t*»
        •^r    oo
        CO    rH
        rH     .
        ^-*   oo
              n
        in
        in
        co
              in
              tn
a\
in
                         oo
         ro
         in
oo
o
in
                                             CM
                                             CN
                            in
                                  CO
                                   •
                                  in
                                  m
                                  vo
H
        PO
        10
        00
        in
              n
              n
              
              OJ
in
10
                                 in
                                 oo
        oo
        in
                                            vo
                                            10
                                                     ro
                                                     CN
                                                          cn
              oo
              oo
              in
                                    XI-62

-------
vo
r-
o
00
      CM
      VO
      in
      00
      CO
                 o

                 §
                 in
CO
vo
vo
oo

-------
               ^-.   in
                    CM
               vo
                •


               VO

                    CO
                               cr>
                               •H
                               CO
                                        in
                                        co
CTl
           OJ
           VO
           in
                                                   co
                                                           CO  /
                                                           p
                                                            •

                                                           in


                                                           CM
                                                                 CO
                                                                 CN
                         00
8


I
at
%
              in
              VO
                    CN
                    CM
                               CO
                               00
                                        co
                                        CM
                                        CM
                                                   CO
           CO
           a\
           CM
                                                           oo
                                                           in
                                                           CM
                                                                 co
                                                                 VO
                               \
                                                Q
                                      XI-64

-------
co
•^r
co
o
in
in
co
CN
iH
co
 •
in
10
co

§
                  vo
cr>
in
CM
«5
O
 a

co
r~-
CO
t-«
co
                     oo
                                      co
                                      oo
                                      oo
                                               en
                              vo
                                                     in
                                                     r-
                                   in
                                   ^r
                                   vo
co
V£>
CP\
CO
in

-------

              vo
              CM
              CO
                    in
                    CO
                    in
                    CN
                               CO
                               cs
                               vo
in
t^-
co
                                        vo
CN
oo
in
                                                   vo
                                                   CN
CN
CTi
                                                           in
                                                                 CN
                                                                 00
a
              VD

              00
              CN
                    in
                    CN
                    in
                    CT>
                    in
                    CN
                               vo
                               VO
                               vo
                               CN
                                        CN
                                        CO
                                        in
                                        in
           in
           CN
           CN
                                                           VD
                                                           CN
                                                                 CN
                                                                 vo
                                         XI-66

-------
 Three costs  have been estimated  for each  level  of treatment for the
 capacitor subcategory.   The cost of the systems differs  because flow
 rates that are input to these  systems  change the size of the compon-
;ents  needed.   The flow rates used in the  determination of system
 costs are characteristic of the  flows  observed  at sampled plants
 within the industry.

 BENEFIT ANALYSIS

 This  section presents an analysis of the  industry-wide benefit
 estimated to result from applying the  three levels of treatment
 previously discussed in this section to the total process waste-
 water generated by the capacitor subcategory.   This analysis esti-
 mates the amount of pollutants that would not be discharged to the
 environment  if each of the three levels of treatment were applied
 on a  subcategory-wide basis.  An analysis of the benefit versus
 estimated subcategory-wide cost  for each  of the treatment levels
 is also; provided.

 Industry-wide Costs
        i
 By multiplying the total annual  cost of each level of treatment
 at various flow rates by the number of plants estimated  to exist
 in each; flow regime in the industry, a subcategory-wide  cost
 figure is estimated.  Table 11-25 presents this tabulation for
 capacitor raw wastes excluding ball milling, and for ball mil-
 ling  raw wastes.  These figures  represent the investment and
 annual costs for each treatment  level  for capacitor waste
 streams: and  ball milling.  This  calculation does not make any
 allowance for waste treatment that is  currently in-place at
 capacitor facilities.

 Industry-wide Cost and Benefit

 Tables tll-26 and 11-27, present the estimates of total annual
 cost  to the  capacitor subcategory to reduce pollutant discharge
 for the treatment of capacitor (excluding ball milling)  waste--
 water and ball milling wastewater, respectively.  These  tables
 also  present the benefit of reduced pollutant discharge  for the
 capacitor subcategory resulting  from the application of  the three
 levels ,of recommended treatment.  Benefit was calculated by mul-
 tiplying the estimated number of liters discharged by the sub-
 category times the performance attainable by each of the recom-
 mended treatment systems as presented in Table 11-13.  Values
 are presented for each of the selected subcategory pollutant
 parameters.
        'i
 The column "Raw Waste" shows the total amount of pollutant that
 would be discharged to the environment if no treatment were employed
 by any jfacility in the industry.  The Levels 1, 2, and 3 treatment
 columns show the amount of pollutants that would be discharged if
 any of ithese three levels of treatment were applied to the total
 wastewater estimated to be discharged by the capacitor subcategory.
                              XI-67

-------
                        TABLE  11-25        ,
                   CAPACITOR SUBCATEGORY
                  INDUSTRY-WIDE COST ANALYSIS
                   (MILLIONS OF DOLLARS)
       Capacitor' (Excluding Ball Milling) Wastewaters
                     Treatment Schemes
Investment*
Annual Costs
   Capital Cost
   Depreciation
   Operation & Maint.
   Energy & Power
Total Annual Cost
                              Level 1
12.75
Level 2
14.26
                        Level 3
16.287
1.075
2.551
1.171
0.00544
4.803
1.202
2.852
1.237
0..0315
5.323
1.373
3.257
1.732
0.039
6.402
*Cost analysis based on 116 plants estimated to be discharging
 wastewater - medium size plant costs have been multiplied by this
 number of plants.      v                   j
                           XI-68

-------
                     TABLE 11-25 (CON'T)

                   CAPACITOR SUBCATEGORY
                 INDUSTRY-WIDE COST ANALYSIS
                   (MILLIONS OF DOLLARS)

         Ball Milling Wastewater Treatment Schemes
Investment*

Annual Costs

   Capital Cost

   Depreciation
       r-
   Operation & Maint,

 \   '  .  V  •      \
   Energy & Power
i       '
Total Annual Cost
                              Level 1
0.554
Level 2

1.229
Level 3

1.326
0.0467
0.111
0.157
0.0016
0.175
0
0
0
0
0
.104
.246
.099
.0099
.458
0,
0,
\
0.
0.
\
0 .
112
265
128
0103
51 6 \
*Cost analysis based on 7 plants estimated to be conducting a
 ball milling process - medium size plant costs have been mul-
 tiplied by this number of plants.
                             XI-69

-------
                                        TABLE 11-26    '

                           CAPACITOR SUBCATEQORY - INDUSTRY COST?
                                    AND BENEFIT ANALYSIS

                    Treated Capacitor Raw Vfeste - Excludes Ball Milling
                                                LEVEL 1      LEVEL 2
                                   Raw Wfeste    Treatment    Treatment
 Parameter                         kg/year      kg/year      kg/year

 Plow (Million Liters Per Year)*     571.9      571.9          571.9

 120 Copper                          320.7      NC**   '>,        NC
 122 Lead                            734.6      NC     !         28.60
 128 Zinc                            134.6      NC     '        NC
     Aluminum                        326.2      NC             NA***
     Barium                          550.6      NC             NA
     Iron                           1029.3      NC             455.8
     Manganese                      1286.8      NC             NA
     Oil & Qrease                   5261.5      NC             NC
     Total Suspended Solids        78182.0      NC     '      10179.8
     pH                                6.4        7.0          NC

 Annual Cost (Million Dollars)        -           4.803
5.323
LEVEL 3
Treatment
kg/year

 571.9

 210.5
  19.4
  NC
  NA
  NA
 147.0
  NA
4060.5
7263.1
  NC

   6.402
  *Based on 116 plants (See Table 11-25)
 **NC - No change in concentration due to additional treatment
***NA - Data not available
                                          XI-70

-------
                                  CAPACITOR SUBCATEQORY
                                COST AND BENEFIT ANALYSIS

                               Treated Ball Mill Raw Waste
Parameter

Flow (Million Liters Per Year)1

119  Chromium
120  Lead
128  Zinc
     Barium
     Total Suspended Solids
     pH
Annual Cost (Million Dollars)
Raw Waste**
kg/year

24.5
LEVEL 1
Treatment
kg/year

24.5
LEVEL  2
.Treatment
kg/year

24.5
LEVEL 3
Treatment
kg/year

24.5
5.81
26.95
4165.0
1266650.
24745.


NC
NC
NC
2871
5243.
7.0
0.175
NC
1.23
NC
NA
436.1
NC
0.458
NC
0.83
6.05
NA
311.15
NC
0.516
NA - Data not available
NC - No change in concentration due to additional treatment
*Based on 7 plants (See Table 11-25)
**One saripled ball nail stream, Plant ID 31072
                                         XI-71

-------

-------
                        SECTION XII
              CONTROL AND TREATMENT TECHNOLOGY
INTRODUCTION

This section describes the treatment techniques, currently used
or available to remove or recover wastewater pollutants  normally
generated by Electrical and Electronic Components  (E&EC) manu-
facturing plants.  Included are a discussion of treatment system
performance transferable from the Metal Finishing  Category  data
base and a discussion of individual treatment  technologies  and
in-plant technologies.  The technologies presented are appli-
cable to the entire E&EC manufacturing industry for both direct
and indirect dischargers and reflect the entire E&EC manufacturing
data base.

To minimize the total mass of pollutants discharged in E&EC
manufacturing, a reduction in either concentration or flow  or
both is required.  Several techniques are  being employed to
effect a significant reduction  in total pollution.  These
techniques can be readily adapted to other existing facilities
and include:
1.
2.
3.
4.
          Avoidance  of  unnecessary  dilution.   Diluting  waste
          streams with  unpolluted water  makes treatment more
          expensive  (since  most  equipment  costs are directly
          related to volume of wastewater  flow) and more diffi-
          cult  (since concentrations  may be  too low to  treat
          effectively). '  Precipitated material may also be
          redissolved by  unpolluted water.

          Reduction  of  flow to pollution -generating processes.
          Use of  counter cur rent,  spray,  and  fog rinses  greatly
          reduces the volume of  water requiring treatment.
          After proper  treatment,  the mass of a pollutant
          that  remains  in the solution is  a function of the
          volume  of  water.   Hence,  less  water, less pollutant
          discharged.

          Treatment  under proper conditions.   The use of the
          proper  pH  can greatly  enhance  pollutant precipita-
          tion.  Since  metallic  ions  precipitate best at various
          pH levels, waste segregation and proper treatment at
          the optimum pH  will produce improved results.  The
          prior removal of compounds  which increase the solu-
          bility  of  waste materials will aloow significantly
          more  efficient  treatment of the  remaining material.
          An example is the segregation of complexed wastes
          from  wastewater containing  noncomplexed metals.

          Timely  and proper disposal  of wastes.  Removal of
          sludge  from the treatment system as  soon as possible
                                 XII-1

-------
            in the  treatment process minimizes  returning pollut-
            ants to the waste  stream through  resolubilization.
            One plant visited  during the MFC  study  (ID  23061)
            utilized a settling tank in their treatment system
            that required periodic cleaning.  Such  cleaning had
            not been done for  some time, and  our analysis of both
            their raw and treated wastes shpwed little  difference
            Subsequent pumping out of this settling tank resulted
            in an improved effluent (reference Table 12-1).

           Once removed from  the primary effluent  stream, waste
           sludges must be disposed of properly.   If landfills
           are used for sludge disposal, the landfill must be
           designed to prevent material from leaching back into
           the water supply.  Mixing of waste sludges which
           might form soluble compounds should be prevented.  If
           sludge is disposed of by incineration, the burning
           must be carefully controlled to prevent air pollution.
           A licensed scavenger may be substituted for plant
           personnel to oversee disposal of the removed sludge.

                          TABLE 12-1

           COMPARISON OF WASTEWATER AT PLANT ID 23061

           BEFORE AND AFTER PUMPING OF SETTLING TANK
 Parameter
Cyanide,  Amen,  to
Chlorination
Cyanide,  Total
Phosphorus
Silver
Gold
Cadmium
Chromium,
 Hexavalent
Chromium, Total
Copper
Iron
Fluoride
Nickel
Lead
Tin
Zinc
Total Suspended
 Solids
 Concentration  (mg/1)
 Before  Sludge  Removal
               Concentration  (mg/1)
               After Sludge Removal
                   Total Raw
                     Waste
 0.007
 0.025
 2.413
 0.001
 0.007
 0.001

 0.005
 0.023
 0.028
 0.885
 0.16
 0.971
 0.023
 0.025
 0.057

17.0
           Treated
           Effluent
 0.001
 0.035
 2.675
 0.001
 0.010
 0.006

 0.105
 0.394
 0.500
 3.667
 0.62
 1.445
 0.034
 0.040
 0.185

36.00
             Total Raw
               Waste
 0.005
 0.005
14.35
 0.002
 0.005
 0.005

 0.005
 0.010
 0.127
 2.883
 0.94
 0.378
 0.007
 0.121
 0.040

67.00
           Treated
           Effluent
 0.005
 0.05
13.89
 0.003
 0.005
 0.002

 0.005
 0.006
 0.034
 1.718
 0.520
 0.312
 0.014
 0.134
 0.034

 4.00
                                 XII-2

-------
TRANSFER OF PERFORMANCE

The similarity of raw wastes between the E&EC Category and the
Metal Finishing Category (MFC) allows the transfer of waste treat-
ment technologies and their proven performance to the E&EC Category,
This transfer of treatment technology performance is necessary to.
provide support for the E&EC Category from the larger Metal Finish-
ing Category data base.  Information used in the preparation of
the Metal Finishing Category data base was gathered from  industry
visits and sampling, an industry-wide survey, a literature
survey, and telephone contacts.

The following subsections will present waste treatment technol-
ogy performance transferred from the Metal Finishing Category
as well as a discussion of the individual waste treatment tech-
nologies, their application, and performance.

TREATMENT SYSTEM PERFORMANCE

This section presents performance attainable by treatment
systems recommended for use in the E&EC  Category.  This per-
formance data has been transferred from  the Metal Finishing
Category due to the similarity of raw wastes produced  by  these
two categories.

The following breakdown will  be utilized in this discussion
of wastewater treatment system performance:

     Hydroxide Precipitation/Sedimentation - Metals  removal  by
                     chemical precipitation and  sedimentation.

     Polishing Filtration  - Metals removal by  chemical precipi-
                     tation,  sedimentation, and  polishing
                     filtration.

     Skimming - Oils removal.

     Carbon Adsorption - Total Toxic Organics  (TTO)  removal.

Hydroxide  Precipitation/Sedimentation

The  core of  the metals removal waste treatment system is  a
hydroxide  precipitation/sedimentation mechanism.   Hydroxide
precipitation/sedimentation  includes pH adjustment,  precipitation,
flocculation, and  sedimentation.   Hydroxide  precipitation/sedi-
mentation  may be  carried  out  with  equipment  such as  clarifiers,
tube  settlers,  settling  tanks,  sedimentation  lagoons,  and various
filtration devices  using  hydroxide  or sulfide precipitation.
Some  raw wastes  require  pretreatment before  going  to solids
removal.   Hexavalent  chromium bearing wastes  must undergo chemical
reduction  in  order to  reduce  hexavalent chromium to trivalent
chromium  (This  step is not necessary if sulfide precipitation is
being  used in the  solids  removal  operation because the hexavalent
chromium  is reduced in the precipitation reaction).
                                XII-3

-------
 Performance of a properly operating Hydroxide precipitation/
 sedimentation system (shown in Figure 12-1 with its sources of
 wastes) is demonstrated by effective solids settling, which is
 indicated by low effluent levels of total suspended solids (TSS)
 Effective solids settling depends upon maintaining the system
 pH at the level needed to form metal hydroxides.  Generally a
 pH range of 8.5 to 9.5 is considered optimum for hydroxide pre-
 cipitation with mixed metal wastes.

 To establish the treatment system performance characteristics,
 visited plants employing hydroxide precipitation/sedimentation
 treatment were selected from the Metal Finishing Category data
 base.   The files for these plants were then examined to ensure
 that only properly operating facilities :were included in the
 performance data base by establishing criteria to eliminate the
 data for improperly operating systems.  The criteria for elimin-
 ating  improperly operating treatment systems were, as follows:
 1.
Date with an effluent TSS level greater  than  50 mg/1 were
deleted.  This represents a level of TSS above which no
well-operated treatment plant should be  discharging.
Figure 12-2 shows effluent TSS concentrations vs. per-
centile distribution.  As is shown  in  the graph, there is
an abrupt increase in slope (approximately 5.8:1) at the
50 mg/1 level.  Deleting data above this concentration
still includes nearly seventy percent  of the data base.
The following presentation of TSS a;nd  metals concentrations
for plants 20073 and 20083 shows that  a  low level of TSS
in indicative of low effluent metal; concentrations.
                          Plant  ID 20073  (mg/1 )
          Day 1
                                    Day  2
Day 3
TSS
Cu
Ni
Cr
Inf.

702.
64.6
53.8
162.
Eff.

11.
.812
.448
1.47
Inf.

712.
97.1
52.5
175.
Eff.

14
.875
!.478
1.89
                                             Inf.

                                             124.
                                             91.2
                                             89.7
                                             220.
     Eff.

     33.
     1.37
     1.12
     2.85
                                 XII-4

-------
           Chromium
            Bearing
            Wastes
   Metals
   Wastes
         Hexavalent
          Chromium
          Reduction
            Precipitation
           Sed imentation
Sludge

             Discharge
               FIGURE  12-1
   TREATMENT  OF METALS WASTES BY
HYDROXIDE PRECIPITATION/SEDIMENTATION
                         XI I- 5

-------
                                        2    «
                                        3    M
                                        •Q    PS

                                        a   7§
                                        3   CN M
                                             CO
                                             CO
                                             PS
                                             cq
                                             PS
                                             o
XII-6

-------
                         Plant ID 20083 (mg/1 )
        Day 1
   Day 2
                           Day 3
     Inf.
Eff.
Inf.
Eff.
Inf.
Eff.
                           Day 4
                                                     Inf.
                                                Eff.
TSS
Cu
Ni
24.0
56.2
103
145
2.75
6.13
18.0
57.7
153
23.0
0.38
0.91
15.0
39.3
82.8
27.0
0.21
0.77
10.0
50.0
87.1
97.0
2.44
4.75
2.   Plants with alkaline precipitation systems that operated at
     an average effluent pH of less than 7.0 were deleted.  An
     alkaline precipitation system will not work properly in
     this pH range, as is illustrated by the following data from
     plant 21066.
                         Plant ID 21066  (mg/1)

                                                  Day 2

                                              Inf.      Eff.
            Day 1

       Inf.      Eff.
Avg. effluent pH
TSS
Cr
Zn
NA
48.0
5.36
114
5.4
448
3.74
150
NA
61.0
8.99
I'll
5.1
371
1.28
140
Proper control of pH is absolutely essential  for  favorable perfor-
mance of precipitation/sedimentation technologies.  This  is  illus-
trated by results obtained from a sampling visit  to manufacturing
plant 47432  (not a metal finishing plant) as  shown in  the follow-
ing table (concentrations are  in mg/1}:
          In
               Day 1
pH Range  2.4-3.4

TSS       39

Copper    312

Zinc      250
      •i

Lead      0.16

Nickel    42.8
                       Day  2
                                  Day  3
Out
8.5-8.7
8
0.22
0.31
0.03
0.78
In
1.0-3.0
16
120
32.5
0.16
33.8
Out
5.0-6.0
19
5.12
25
0.04
0.53
In
2.0-5.0
16
107
43.8
0.15
36.6
Out
6.5-8,1
7
0.66
0.66
0.04
0.46
                                XI 1^

-------
 This plant utilizes lime precipitation and pH adjustment followed
 by flocculant addition and sedimentation.  Samples were taken be-
 fore and after the system.  On day two effluent pH was allowed to
 range below 7 for the entire day, and the effluent metals control
 was less effective than on days one and three.  In general, better
 results will be obtained in chemical precipitation systems when pH
 is maintained consistently at a level between 8.5 and 9.5.  It can
 be clearly seen that the best results were produced on day one when
 the effluent pH was kept within the recommended range for the entire
 day.

 3.   Plants which had effluent flows significantly greater than
      the corresponding raw waste flows were deleted.  The in-
      crease in flows was assumed to be dilution by other waste-
      waters.

 4.   Plants that experienced difficulties in system operation
      during the sampling period were excluded.  These difficulties
      included a few hours operation at very low pH (<4.0),
      observed operator error,an inoperative chemical feed system,
      improper chemical usage,  improperly maintained equipment,
      high  flow slugs during the sampling period, and excessive
      surface  water intrusion (heavy rains).

 The following procedure was followed for each metal pollutant para-
 meter in ord,er to eliminate spurious background metal readings.
 The mean effluent concentration of each  parameter was calculated
 and when a raw waste concentration was less  than the mean effluent
 concentration for that parameter,  the corresponding effluent reading
 was deleted from the data set.   The mean was  recalculated using
 points  not removed initially,  and  the process was repeated in an
 interative loop  until  all raw  waste concentrations were  greater
 than  the calculated  mean  effluent  concentration.  The deletion
 of these points  prevents  the  calculation of unrealistically low
 effluent concentrations  from  the waste treatment systems  due to
 low raw  waste  pollutant  loadings.            |

 Plots of raw  waste concentration vs.  effluent concentration were
 generated  for total  suspended  solids,  cadmium,  total  chromium,
 copper,  iron,  lead,  nickel, zinc,  and  fluorides.  These plots
 are shown  in  Figures  12-3  through  12-11.   The mean effluent
 concentrations for these  parameters  were  then computed and  are
presented  in Table 12-2.
                               XII-8

-------













«









1



N C
ft "















0
0
a





i



9 (
a- '








t






"










3
a r
9 e

&





0












!

**
3
1
o

*l «
1 <





e


|
4J
2

a
"
3
£
a


Q









»
N







a
i


















V









A



a


0 °
"a
o
a*
a





a
i
a

a <
•4








0

f)

a '




1
a




a
i

a
e
Q
a e
                                          «  H1
                                          -t  S
                                             0)

                                             01
                                             to
                                            •o
                                             o
                                             en
                                             g.
                                             u

                                          a  «
                                             o
                                             frl
                                                          cn
                                                          z
                                                          o
   Ed
   O

   O
   o

   w
   EH
   cn
                                                          (0
pi! cn

o o
M l-l
Eu
   w
   CJ

   o
   u

   cn
   cn
   EH

   EH
   Z
   Ed
                                                          ELI
                                                          EL.
                                                          EL)
       pspusdsng
XII-9

-------


































9 <=
r> •»
3 C


































c
• -a
c














i











a







CV
. f
C








.










a














i "a
i <•>
c












a








ci



°n








p» *i
4 i-
3 C





S
Jj
2
4J
C
— a-
c
















Q








)
4
)






















^

0
A
<
o







o
c
c




















dj


A
a
a
a
r9
a^







3 <
3
3






O





»^
:^ s

* (U
in
^
3

                                                rH
                                                  03


                                               .05 O
                                                D M
                                                U EH
                                                  2
                                                  U
                                                  S
                                                  o
                                                  o

                                                  a
                                                  D
                                                  O

                                                  EH
                                                  S
                                                  ca
                                                  D
                                                  J
(t/Sui)
   umtiupeo
XII-10

-------






«
;










i







33
•J <







9 .:


















q. (
•M <







9
»

















3
N







9


















o.
•*








Q 0










e
a






N
-*






^
.U)
AJ
* 1




a












a
a







a e




a
i




















a
e




o
a


9

9
9 ef*
a
_ 	 _





«!•
3
O






O
o



„
?
41
Jj
tn
2 S


. -g
u
o
0





l-t

                                                                    CO

                                                                    o
                                                                    M
                                                                    EH
                                                                    w
                                                                    u
                                                                    B
                                                                    O
                                                                    o
                                                                    EH
                                                                    CO

                                                                    $



                                                                    I

                                                                  m to

                                                                  CM
                                                                  •H CO
                                                                    3
                                                                     EH
                                                                     2
                                                                     a
                                                                     a
                                                                     2
                                                                     O
                                                                     O


                                                                     D
                                                                     M


                                                                     I
                                                                     ra
                                                                     o
                                                                     fa
                                                                     U
(X/6ui)
             XII-11

-------



































3 00
1 *»

















S

















«
^

















@

















3 <*
f f



































1 •«
1 C













et
^ *

a
o

















I1 y
4 r-




g

2

; 1
(0
Q






<




a



a
!








9 i °
4 e










—IP 	

i

df




3 M

e>

a °
i

a *
' n'







9 e
a
o
.0







a






01
41
to
.0 OS



&

0)
a*
a

o







•-*
9°
                                                            CO
                                                            g
                                                            w
                                                            o
                                                            &
                                                            o
                                                            0
                                                           - en
                                                          I  CO
                                                          CN >
                                                          rH
                                                            cn
                                                          w 3
                                                          rt O
                                                          D M

                                                          M §
                                                          l£i S
                                                            EH
                                                            Z
                                                            W
                                                            a
                                                            3
                                                            O
                                                            a
                                                            Qj
                                                            O
                                                            u

                                                            EH
                                                            2
                                                            EL)
                                                            D
                                                            EC4
(T/6m)
          XII-12

-------
                                              s
                                             -s-
                                              •as
                                                  -ag
                                                      §-?•
                                                                      CO


                                                                      O
                                                                      M
                                                                      EH
                                                                      CJ
                                                                      3
                                                                      o
                                                                      o

                                                                      w
                                                                      EH
                                                                      CO
                                                                   CM Ul
                                                                   M >

                                                                   Ed CO
                                                                   « 3
                                                                   D O
                                                                   O M
                                                                      W
                                                                      O
                                                                      3
                                                                      O
                                                                      CJ



                                                                      I
                                                                      EH
                                                                      3
                                                                      a
(t/6ui)
                   uo.i!
               XII-13

-------


__




o








o










i a
• Ul
•« *H



























U1
CN
••M



























C
C
»-

a

























IT
r«
c







1
C




- '

a

i









c
If
 {N
e







(





(


1 <
(

I
a
i s





c
C"*





en
( 1
• K
O
!-J o

u
— en
i *•* i^j
£ s

o; oi cn
1 „ D Z
« C5 O
J W M
O &4
S
U
§
o
0
a
EH
z
u
3
fa
s •
(T/6M)
                 peart
             XII-  14

-------














































































































••



















































2

S
*
9
a











0^


e
6









a
o
00



9
8
8
e
a

Q-._


a
0
e?
a
o
a








0
o


• ••*
o»

jj

                                                                iH
                                                                   cn
                                                                w  s:
                                                                «  o
                                                                D  M
                                                                  O
                                                                  S
                                                                  o
                                                                  o
                                                                   Ed
                                                                   !^
                                                                   U
                                                                   M
                                                                   EH
                                                                   3
                                                                   Cd
                                                                   O
                                                                   Cu
                                                                   Cd
    03          \O


(T/Sui)
             XII-15

-------








o



i

















n c
•
i p












I

















3 ir
*
1 ^






























, c
; p






























5 u
J








S <
e
^»






9
I














1 C
•
* *"







1
4J
» o ij
	 -I-.
	 — §+
i .




w ®
1

i




i

a



s

3
* -












*"*


€
3 0


_
*"^
fll
Q

a<=
'•',

p





in c
0
o
, o
—,-






a
•0






CT>
HI
0 JJ

S
a:
o
•^4
N

i
0






—t
j0
                                                                             O
                                                                             M
                                                                             2
                                                                             M
                                                                             U
                                                                             3
                                                                             O
                                                                             O

                                                                             Cd
                                                                             6^
                                                                             cn
                                                                          « cn
                                                                          ID 2
                                                                          O O
                                                                             Ed
                                                                             O
                                                                             3
                                                                             O
                                                                             U

                                                                             CJ
                                                                             2
                                                                             M
                                                                             Cu
                                                                             EL,
                                                                             W
(t/6ui)
               ,  XII-16

-------
                                                       in
                                                       w
                                                       
-------
                          TABLE  12-2
   TREATMENT  OP  METALS  BY HYDROXIDE  PRECIPITATION/SEDIMENTATION
                 MEAN  EFFLUENT CONCENTRATIONS

               Parameter                      mg/1

          Total  Suspended Solids              17.8
          Cadmium                             .012
          Chromium, Total                  I  .572
          Copper                             .814
          Iron                              :  .797
          Lead                                .050
          Nickel                             .942
          Zinc                                .551
          Fluorides                           15.3

Table 12-3 presents the values  for daily  and  30-day  average  maximum
variability factors that  were established for the  Electroplating
Category.  The derivation and development of  these are  reported
in detail in  the Development Document  for Existing Source  Pretreat-
ment Standards for the  Electroplating  Point Source Category
(EPA 440/ 1-79/003, August 1979).  These  values were used  in
conjunction with the  mean effluent concentrations  tabulated  in
Table 12-2 to establish the daily maximum and 30 day average
concentrations presented  in Table 12-4 for treatment of metals
using hydroxide  precipitation/sedimentation.

                           TABLE 12-3
               SUMMARY  OF DAILY AND  30-DAY AVERAGE
                   MAXIMUM VARIABILITY FACTORS
                                       Variability Factor
    Pollutant

Total Suspended Solids*
Cyanide, Total
Cyanide, Amenable
Cadmium
Chromium, Total
Chromium, Hexavalent
Copper
Iron*
Lead
Nickel
Zinc
Silver
Fluorides*
Oil and Grease*
Total Priority Organics
Daily Max.
     2.9
     5.
     5,
 ,0
 ,0
2.9
3.9
5.2
3.2
2.9
2.9
2.9 i
3.0 I
2.9 •
2.9
2.9
2.9
30-Day-Avg.

    1.3
    1.5
    1.5
    1.3
    1.4
    1.5
    1.3
    1.3
    1.3
    1.3
    1.3
    1.3
    1.3
    1.3
    1.3
*Miniraum variability factor selected; further  effort  needed  to
 establish final value.
                                XII-18

-------
                           TABLE 12-4
   HYDROXIDE PRECIPITATION/SEDIMENTATION SYSTEMS CONCENTRATIONS
                                       Concentration  (mg/1)
    Pollutant

      Total Suspended Solids
(118) Cadmium
(119) Chromium
(120) Copper
      Iron
(122) Lead
(124) Nickel
(128) Zinc
      Fluorides
Daily Max.

     51.6
     0.04
     2.23
     2.61
     2.31
     0.15
     2.73
     1.65
     44.4
30-Day-Ave.

    23.1
    0.02
    0.80
    1.06
    1.04
    0.07
    1.23
    0.72
    19.9
The data collection portfolios  (DCP's) received  from  non-visited
facilites were also sorted for  plants which utilize hydroxide
precipitation/sedimentation treatment systems.   Of these plants,
fifty reported effluent concentration data.  The raw  waste  data
were very fragmented and could  not be correlated with the effluent
data.  Consequently, only effluent concentration statistics were
generated, and the pe-rcentile distribution for these  effluent
concentrations are presented in Figures  12-12 through 12-20.
Because these plants were not visited, it is not possible to know
which plants were not operating properly and should be deleted.
The dally maximum concentrations  that were presented  in Table  12-4
are overlayed onto these distribution plots for  direct comparison
of the visited plant sampling data with  these DCP data.

Figures 12-21 through 12-29 present effluent concentrations for  the
entire metal finishing data base.  The graphs include all data points
including those that were removed during the determination  of  the
pollutant mean effluent concentrations for a properly operating
treatment system.  Data are presented for nine pollutants and  the
daily maximum concentration for each pollutant is overlayed for  .
comparison.

Polishing Filtration

Polishing filtration treatment  systems for metal wastes removal
is identical to the hydroxide precipitation/sedimentation treatment
system with the addition of filtration devices after  the primary
solids removal devices.  The purpose of  these filtration units is
to "polish" the effluent, that  is, remove suspended solids  such
as metal hydroxides which did not settle out in  the solids  removal
devices.  The filters also act  as a safeguard against pollutant
discharge if an upset should occur in the solids removal devices.
                                 XII-19

-------
  2800<
  2400
   2000'
c
0*
s

to
o
CO
  1600-
a, 12001
(a
s
CO
4J
   800-
   400-
              Daily Maximum
        g a n n a
                              B E3B ° °° B
                                         Hm a B
B
                                                    Q
                 20  : "     40         60        80

                     Percentile Distribution
        100
                          FIGURE 12-12;


             DCP DATA FOR TSS EFFLUENT; DISTRIBUTION
                              XII-20

-------
                                               2
                                               O
                                               1-1
                                               E-i
                                               D
                                               CO
                                               H-h
                                               OS
                                               ^
                                               en
                                               M
                                               Q
                                            ro W
                                            r-t D
                                            I J
                                            
-------
  14-
  12-
4J
c  8
0)
3
U-l
W

e
SJ

o




  4 -
   2-
            Daily Maxinuan
                                                     ur
l         20         40         60         80

              Percentile Distribution



                 FIGURE  12-14


 DCP DATA FOR CHROMIUM EFFLUENT DISTRIBUTION
                                                        100
                            XII-22

-------
  14 T
  12 -
  10
Is

4J
c
0)
D
W

-------
   7-1
   6-
   5 -







rH
X.


£  4
c
0)
3
a


o
   2-
   1-
           Daily Maximum
                                       -ra-
a
                       a n a
                             Cl
      m D
20
                         40        60         80

                    Percentile Distribution
                         FIGURE 12-16



          DCP DATA  FOR IRON EFFLUENT DISTRIBUTION
                   100
                            XII-24

-------
        "r-
                                                I
                                                M
                                    » ^
                    CO
                    M
                    OS

                    03
                    M
                    Q
                                       •"«
                                       —•

                                       0)
                                              I
                                             CM
                    2
                    u
                    O
                    J
                    Eu
                    b
                    Cd
quants33
  XII-25
                                             Cu
a
>,
      a :
                                                o
                                                Eu



                                                1

                                                04
                                                O
                                                Q

-------
  14 n
  12-
  10-
   8-
4J
C
0)
3
rH
IM
UJ
ri  6-
o
•H
   4-
   2-
             C3
              Daily Maximum
          es
CDd
                            13
                                 O
                                      a03
       d n n tn ofy™' T*  i
20
—I—
 40
                                    60
—T—
 80
              100
                    Percentile Distribution
                          FIGURE 12-18


          DCP DATA FOR  NICKEL EFFLUENT  DISTRIBUTION
                              XII-26

-------
   28-i
   24-
   20-
cn
-u
e
0)
3
ca

o ;
c
   16-
    8-
    4-
                                                       Q
             Daily Maximum
               20         40         60

                    Percentile Distribution
80
100
                         FIGURE  12-19


           DCP DATA  FOR ZINC EFFLUENT DISTRIBUTION
                             XII-27

-------
                                                  •" c
                                                    •u
                                                             M
                                                             £•«
                                                             D
                                                             CQ
                                                             CQ
                                                             M
                                                             Q
   a
   EL)
O D
CM J
 I  b
CN Cn
<-l Cd

Kl CQ
ffl EL)
O Q
C3 M
M OS
fa O
   D
   J
   CD

   OS
   O
(T/6ui)
              XII-28

-------
















e

ei






























a





















e















a






e

0






e










a
a





p


a
a o
Cl


e

a
9






n


o 1
iitiim ttotal
X
S
>,


£1
O
a
i






a
f









<



a

1
0
e
e
i

c
a


a




g


<
a

a e
<
i
«3 a *
^ Cl
° ,,
tn
a*
0° a
1°
.

A
~*^l g
"
1,0 «* "^
o«
03
e0 a«
go
9 a
a
^HJj} Q
a
9 i

^*
p

















m
o
















o
0
































—
\
E
V
u
at
S
f
a
ca
01
3
o
.
u
o
o>
4J

O
ct>
c
01
a
b
•J
1)
S
01
.^
JJ
c
Cd
~~'





































en
13
o
M
£H
<
EH
H
U
O
CJ
ta
fH
en
*i
^
t 	
fNI 5
1 «
CN
rH M

PJ
OS en
o o
M M
pr^ J^H
isC
(2
EH
S
ra
CJ
2:
o
CJ
en
en
EH
EH
ia
D
iu
Ixi
la
o
9
es
    o
    a
(T/6ui)
                              SPTTOS papuadsng
                                   XII-29

-------
                                    3
                                                         CQ
                                                         O
                        §
                                           	  la
                                               -*4
O

Ed
EH
cn
                                       '•- S1
                                            s   ™
                                                       
                                                       ta *z
                                                       cm o
                                                       D M
                                                       U EH
                                                       CL.
                                                         «
                                                         O
                                                         u
                                                         Ed
                                                         En
                                                         b
                                                         Ed
XII-30

-------
                                             •ae-
                                                            in

                                                            
                                                             

r-H Ol

U O
t^ Cj
a ^
M «
fa EH

   a
   o

   §
   o

   s
   D
   M


   I
   30
   O

   EH
                                                                       fa
                                                                       fa
                                                                       EL]
(t/Sui)
             XII-31

-------

                                    J.
                               g
                                            9   9
                                                             OJ

                                                             
-------














*

1










a ! *
M C















9











T "e
•4 C











-,















S v
S r
















9
Q










o t
•t ' *



























s
-1








a


a

E
„

	 BT—










a





a



c
yiJ
1
— a-



£




a





a8








o

*
e
i 	 6
	 E
O
a

a
	 *
8-S&


4
1«
TTT^





Ul
T nj
o a
>u
iJ
ClJ
a
r? CQ
o B
2 1
° i
"o ! §
O — « »rr
*-* J= ^


- ' - CJ
nj
1
* <
•I C 5 %
.- j ~ in ^
e CM «
• — 1
• 
nj
• -7- Prl fA
i DO
£ OH
§ fa 2
F o
s
0
(«
0 H
i -1 EH
D
J
fa
. w
_,
a
o
(T/6ui)
            XII-33

-------
3


f>4
                                                                                                •8.
                                                                                                                    .0
                                                                                                                    Q
                                                                                                                    id

                                                                                                                    CJ
                                                                                                                    Ol
                                                                                                                    C
C

u*

i-4
a
^j
                                                                                                                    C. —
                                                                                                               0)
                                                                                                               JJ

                                                                                                               01
                                                                                                               10
                                                                                                               3
                                                                                                               nj
                                                                                                               o:
O
M


I
EH
a
w
a
3
O
CJ

ca
EH
CO
           I   (A
          CM  >
          iH
             CO
          W 2
          K O
          D M
          O EH
                                                                                                                                 w
                                                                                                                                 CJ
                                                                                                                                 a
                                                                                                                                 o
                                                                                                                                 cj

                                                                                                                                 Q
                                                                                                                                 <
                                                                                                                                 W
                                                                                                                                 EH
                                                                                                                                 a
                                     (T/6w)
                                                         XII-34

-------










r




<

>














































9





























n
0




Q




a























9 9
O

Q 9

, o












—4
^4
s
3
X
I
>,
*H
•rH
d





9

9


w

'



9









3
(



g






















0
e
o
a °
9
O 9a
a «e «
o *o


9
9
e3
s
9 •&
e
Q
9
9
Q 9

g
p «» a jjj
©a 9 CT
"0° 9
j ^^y
«5,
Pe q,Q0g
9 £
9 -a
M «
O







O








o









3
a
>,
U
O
5?
a
o
ishing
c
tb
10
S
0)
U
—4
JJ




en
§
t™H
J
EH
23
w
CJ
o
CJ
w
EH
tn
nj
S
_
10
a;
^
(U
o
z
1
01 tn
r-l >

H CO
P^ J2J
D O
O M
S 
-------


o



















3 •**
4 CM






















0
CM








e













s






















CN






















a


""-"•a 	







Q











«





	 ET
a



u-u~
3 0 e
	 g
a






1 1

S4
•— *
a







a




4
e
a
t
•^

9
e
At

~^\
i


O
o a
T ° '"
. o a
•3
w
• ill
a
>i
S w
2 o
m M
-. ^
' 5 ~ ooS
7 «
4J 1
aw CN CO
,- « rH >
3 MM
, " no
(j pfj ij
1 .S M EH
EH
W
1 CJ
1
•"* ' ^ *
CJ
is
M
CS3
Cj
S
w
a
^-1
O
(t/6iu)
           XII-36

-------


























'!
0 • '








uorides


g
X
a
»—4
.^4
a-











9












































0










a '. o














a
a

a
a
a









•< •
















0 a
•• °
a









3s V






9 0





ft



Qa a
a
0




1 a
i



a
















e
a
9



P8 a
Pla
»%
n 9
« d


a c




















r-l
O*

01
Ul
3
3
a
cs
01
01
•a
•~4
O
3
Gu











iJ
(0
a

>*
^i
o
en
OJ
jj

CN
rH CO
a
u o
05 M
CD EH
C^3 i^
1~H W
fc. EH
"Z
w
u
o
u
CO
w
Q
HH
05
O
fa
EH
K)
a
                                                        w
(t/6ai)
                 XII-37

-------
 Plants were selected that were visited and'sampled and were
 operating polishing filtration type treatment system.  Plants with
 poorly operating treatment systems were then deleted from the data
 set using the same exclusion criteria detailed previously.

 Plots  of  raw waste vs.  effluent were generated for the following
 parameters:   total suspended solids, cadmium, total chromium,
 copper, iron, lead, nickel,  zinc,  and fluorides.   These plots
 are presented as Figures  12-30 through 12-38.  The mean effluent
 concentrations for these  parameters were calculated and are
 presented in Table 12-5„

                          TABLE 12-5

     POLISHING FILTRATION MEAN EFFLUENT CONCENTRATIONS
           Parameter

      Total Suspended  Solids
 (118) Cadmium
 (119) Chromium, Total
 (120) Copper
      Iron
 (122) Lead
 (124) Nickel
 (128) Zinc
      Fluorides
        mg/1

        12.7
        .011
        .319
        .368
        .257
        .034
        .550
        .247
        4.76
The^variability factors presented  in Table  12-3 were used  in
conjunction with the mean effluent concentrations shown  in
Table 12-5 to establish the daily maximum and 30-day average
concentrations listed in Table 12-6 for the polishing filtra-
tion treatment of common metals.  Table 12-7 provides a  list-
ing of Metal Finishing Category plants in the data base  which
have a polishing filtration system.

                            TABLE 12-6     ;

    POLISHING FILTRATION TREATMENT SYSTEM CONCENTRATIONS
     Pollutant

      Total Suspended Solids
(118) Cadmium
(119) Chromium
(120) Copper
   Concentration (mg/1)

Daily Max.      30-Day-Avg.
     36.8
     0.03
     1.24
     0.18
16.5
.015
0.45
0.48
                               XII-38

-------




!


•
'














va :
in





e

















a • <









a
a














«p
N







0 a















2







a
a e <














a
•3
•**


cn
2
o
M
EH
EH
2
CJ
1 i
o £ Ed
"* EH
2 cn
Ul 
-------


















CJ
n
a




§
i
i
X
S.
Sf
a









•

1



.


*










a


                                                         CO
                                                       05 O
                                                       D M
                                                         u
                                                         I
                                                         a
                                                         s,
                                                         D
                                                         u
                                                         EH
                                                         3
(t/6m)
             XII-40

-------
                                    er
                                    91
                                    


-------








o
















•> a
» tn
•* — *








9
















u-
•
~*








X
2










































C3
c:

























IT
r>
a

























c
u1
c





a-



















IT
IN
: a














Q
O
3
O








o











_,


01

                                                                          iH
                                                                             co
                                                                          H IS
                                                                          a; o
                                                                          D M
                                                                          C5 E-i
                                                                          M <
                                                                          lii K
                                                                             &H
                                                                             IS
                                                                             w
                                                                             CJ

                                                                             §.
                                                                             u
                                                                             Pd
                                                                             o
                                                                             u
                                                                             w
                                                                             D
                                                                            fa
(T/6ui)
                XII-42

-------
                                      in
                                      a



                                      a
                                      K


                                      O
                                      u
                                  -\ -
 vO


, O
                                                  CO
                                                  2
                                                  O
                                                  M
                                                  o
                                                  JS
                                                  o
                                                  o
                                                  EH
                                                  CO
oo 05
 I
r>» ra
rH >

Cd Cfl
P£ 13
D O
                                                   CJ
                                                   3
                                                   O
                                                   O



                                                   I
                                                   M

                                                   EH
                                                   13
                                                   U
                                                   D
                                                   J
                                                   Eu
   XII-43

-------
a
I
                                                 0  "Z


                                                    I
                                                    nj
                                                    .13

                                                    HI
                                                    J
    a


(T/5ui)
               us
               O
                                                               ca
                                                               z
                                                               O
                                                               i
                                                               EH
                                                               Z
                                                               Ed
                                                               O


                                                               1

                                                               a
                                                               EH
                                                               cn
                                                                       B


                                                                    S2


                                                                    CN M
                                                            a cn
                                                            « z
                                                            D O
                                                            CS M
                                                            M EH
                                                              W
                                                              O,

                                                              I
                                                              u
                                                              Cd

                                                              J


                                                              EH

                                                              Z
                                                              Ed

                                                              D
              XII-44

-------
-s-
 3
                                        E



                                        01
                                        4J


                                     2  |
                                        01

                                        o
                                        ••*
                                        z
in
r»

o
                                                       ui

                                                       o
                                                                                               cn

                                                                                               o
                                                                                               M
                                                                                               EH
                                                                                               Z
                                                                                               w
                                                                                               u
                                                                                               z
                                                                                               o
                                                                                               Cd
                                                                                               EH
                                                                                               01
                                                                                            V£> PH
                                                                                            m
                                                                                             I  (fl
                                                                                            CM >
                                                                                            rH '

                                                                                               CO
                                                                                            M
                                                                                            Ptl
                                                                                               E-t
                                                                                               z
                                                                                               w
                                                                                               CJ
                                                                                               z
                                                                                               o
                                                                                               o
                                                                                               Ed
                                                                                               ^
                                                                                               o
                                                                                               M
                                                                                               z
                                                                                               Z
                                                                                               u
                                                                                               D
                                            XII-45

-------
                                                 CO
•r*



I
                                                I
                                                Z
                                                W
                                                CJ
                                                o

                                                Ed
                                                EH
                                                cn
                                              oo 2
                                              I
                                              CV)  01
                                              rH  >

                                              W co
                                              M z
                                              D O
                                                u
                                                a
                                                (SI
                                                Z
                                                EC.
                                                Cd
XII-46

-------
              u

             •3-
                                                      HI
                                                      JJ
                                                      in

                                                    o S
                                                    -4

                                                      10
                                                      is

                                                      in

                                                      •n
                                                                 CO
                                                                 %
                                                                 o
                                                                 M


                                                                 I
                                                                 O


                                                                 §
                                                                 U
                                                                 E-i
                                                                 tn
00
CO 01
 I  >
CM
•H CO

*§
05 M
                                                               fe £•<
                                                                 3
                                                                 w
                                                                 o
                                                                 3
                                                                 O
                                                                 u

                                                                 en
                                                                 1
                                                                 53
                                                                 U
                                                                 CD
9
CM
                    XII-47

-------
                      TABLE 12-6 (Con't)
          POLISHING FILTRATION SYSTEM CONCENTRATIONS
      Pollutant

       Iron
 (122)  Lead
 (124)  Nickel
 (128)  Zinc
       Fluorides
          Concentration (mg/1)

          Daly Max.   30-Day-Avg
            0.75
            0.10
            1.60
            0.74
            13.8
         0.33
         0.04
         0.72
         0.32
         6.19
                          TABLE  12-7

  METAL  FINISHING PLANTS  WITH POLISHING FILTRATION SYSTEMS
                          FOR METALS
      04140
      04151
      06062
      06131
      11096
      11182
      12075
      12077
      13031
      13033
19069
27042
28121
30159
30519
30927
31021
31022
31033
31044
33070
33073
33110
36048
36082
36102
38223
40047
44150
45041
The data collection portfolios  (DCP's)  received  from  non-visited
facilities were also  screened for  plants  which, have polishing
filtration treatment  system.  Of these  plants, twenty reported
effluent concentration data.  Effluent  concentration  statistics
were generated and the percentile  distribution for  these  effluent
concentrations are presented in Figures 12-39  through 12-47.  Be-
cause these plants were  not visited,  it is  not possible to  know
which plants were not operating properly  and should be deleted.
The daily maximum concentrations that were  presented  in Table 12-6
are overlayed onto these distribution plots for  direct comparison
of the visited plant  sampling data with these DCP data.

Figures 12-30 through 12-38 present effluent concentration  as a
function of raw waste concentration for the entire metal  finishing
polishing filtration  data base.  Data are presented for pol-
lutants and the daily maximum concentration for  each  pollutant
is overlayed for comparison.  Table 12-8  summarizes the percent-
age of the metal finishing data base  that is in  compliance  with
the daily maximum concentration limitation  for the sampled  plants,
the entire sampled data base, and  the DCP data base.
                                XII-48

-------
a
                                                                 s
                                                                 o
                                                                 t-H
                                                                 £•»
                                                                 D
                                                                 CQ
                                                                 w
                                                                 BJ
                                                                 £•<
                                                                 W
                                                                 w-
                                                                 Q
                                                               ro a
                                                               I  U
                                                               CM D
                                                               a; u
                                                               ID
                                                               o en
                                                               M W
                                                                 1
                                                                 o
                                                                 Q
(t/6ui)
                   XII-49

-------
1
a :
a
a
H
1
l a
, a
1 , E
,
,

'
X
3
i >•
•iH
; a
j







1
a

s
3
Q

E
* T\

' t3
, U
: O
-a M
' r" r
ca
M
3 2 ^
3 M
^ Q
Li
J o|
- 1 l-a
2 CN CL<
*v """^ rT i
2 w
O O PT1
•T a. Oi S
D D
O M
pT| Q
S a
1
8 1
0
o C^
"" * ' f^
o
(T/6ui)
           XII-50

-------
                                                                   §
                                                                   M
                                                                   EH
                                                                   D
                                                                   05
                                                                   1-1
                                                                   tf
                                                                   EH
                                                                   cn
                                                                   M
                                                                   Q

                                                                   EH
                                                                   2
                                                                 I
                                                                CN
                                                                ca
                                                                05 S
                                                                3 P
                                                                U 1-4
                                                                M S
                                                                fci O
                                                                   OS
                                                                   to
                                                                   O
                                                                   Cu
                                                                   E-t
                                                                   Oi
                                                                   O
                                                                   Q
(T/8ui)
                mntiuoaqo
                   XII-51

-------
   2.8-
   2.4-
   2.0-
en
S ,  K j
*-» J. . O
c


S
•H
114


m i  *«
  1.2 ^
o
o
   0.8-
   0.4-
                                                        13
                 Daily Maximum
                                                   01
                                           O
                                              o
                                         Q
              o o
                     O
                          o
                            a a
                                 a a
                20         40         60   .      80

                     Percentile Distribution
                                                         100
                         FIGURE 12-42
          DCP DATA FOR COPPER EFFLUENT DISTRIBUTION
                               XII-52

-------
                                —T-
                                 •w
                                  •
                                 a
                                                        2
                                                        o
                                                        M
                                                        CO
                                                        M
                                                        on
                                                        EH
                                                        W
                                                        M
                                                        Q
                                                      -* 2
                                                     , I  u
                                                        Cu
                                                      M 64
                                                      O! EL)
                                                      O
                                                      O 2
                                                      MO
                                                      b Cd
                                                        M

                                                        OS
                                                        O
                                                        I
(T/6itt)
               XII-53

-------
   3

   >t
                                            o "
                                                        I
                                                        M
                                                        E-«
                                                        ID
                                                        CQ
                                                         EH
                                                         CO
                                                         M
                                                         Q
                                                      ** 3
                                                       I  W
                                                      H Cu
                                                      o; ta

                                                      o Q
                                                      M filj
                                                         g
(T/Biu)-
            XII-54

-------
                                           o c
                                           -o o
                                                         §
                                                         M


                                                         g
                                                         CQ
                                                         M
                                                         OS
                                                         EH
                                                         en
                                                      in
                                                      n-
                                                       I
                                                      CM
                                                      H U
                                                      05

                                                      D. J
                                                      U 63
                                                      M 24
                                                      &4 O
                                                         I
                                                         04
(T/6iu)
           XII-55

-------
   6-
   5-
I 4

-U
c
U-l
w

o
c
•H
CS3
3-
   2-
   1-
                                                       Q
                                                    GJ
               Daily Maximum
                                             ID a
                                         m P
                             a n
      ^ m P E3
                         P
                           p
              20         40        60   ;
                    Percentile Distribution
                                           80
100
                       FIGURE 12-46


        DCP DATA  FOR ZINC EFFLUENT  DISTRIBUTION
                             XII-56

-------
                                                        M
                                                        EH
                                                        D
                                                        CO
                                                        Q

                                                        EH
                                                      I  Eu
                                                     CN By
                                                     rH W

                                                     cd en
                                                     OH W
                                                     D Q
                                                     Cu O
                                                        o
                                                        EL,
                                                        o
                                                        a
(T/6a)
             XII-57

-------
                            TABLE 12-8
           PERCENTAGE OF MFC DATA BASE BELOW THE DAILY
  MAXIMUM CONCENTRATION LIMITATION FOR POLISHING FILTRATION
 Pollutant

 Cadmium
 Chromium, Total
 Copper
 Iron
 Lead
 Nickel
 Zinc
 Fluorides
 Sampled Plants
 After Deletions

      100.0
      100.0
      85.7
      93.3
      100.0
      91.7
      88.2
      88.9
      All  Sampled
        Plants

      100.0
      100.0
      88.2
      87.5
      100.0
      92.8
      88.2
      88.9
           DCP Data  Base

            46.1
            88.8
            90.0
            75.0
            62.5
            100.0
            63.6
            66.7
 Summary tables are provided to show a direct comparison of the
 mean,  daily maximum,  and 30-day average for hydroxide precipita-
 tion/sedimentation and polishing filtration.  Table 12-9 presents
 a  comparison on the mean concentrations and Table 12-10 lists the
 daily  maximum and  30-day average concentrationsj for each.

                            TABLE 12-9          ;
   HYDROXIDE PRECIPITATION/SEDIMENTATION AND POLISHING FILTRATION
                MEAN CONCENTRATION COMPARISON
    Pollutant
                   Concentration  (mg/1)
                                 Hydroxide
                        Precipitation/Sedimentation
      Total Suspended  Solids
 (118) Cadmium
 (119) Chromium
 (120) Copper
      Iron
 (122) Lead
 (124) Nickel
 (128) Zinc
      Fluorides
                    17.8
                    .012
                    .572
                    .814
                    .797
                    .050
                    .942
                    .551
                    15.3
                  Polishing
                  Filtration

                    12.7
                    .011
                    .319
                    .368
                    .257
                    .034
                    .550
                    .247
                    4.76
                           TABLE  12-10
  HYDROXIDE PRECIPITATION/SEDIMENTATION AND POLISHING FILTRATION
                      LIMITATION  COMPARISON

                                         Concentration  (mg/1)
                           Hydroxide
                 Precipitation/Sedimentation
Parameter
Daily Max.
      Total Suspended
        Solids         51.6
(118) Cadmium          0.04
(119) Chromium         2.23
30-Day-Ave.
                    23.1
                    0.02
                    0.80
  Polishing
 Filtration

Daily Max.   30-Day-Ave,
                 36.8
                 0.03
                 1.24
              16.5
              .015
              0.45
                               XII-58

-------
       ;               TABLE 12-10 (Con't)
  HYDROXIDE PRECIPITATION/SEDIMENTATION AND POLISHING FILTRATION
                   LIMITATION COMPARISON
Parameter

(120) Copper
      Iron
(122) Lead
(124) Nickel
(128) Zinc
      Fluorides
                Concentration (mg/1)

Daily Max. 30-Day-Ave.  Daily. Max. 30-Day-Ave.
   2.61
   2.31
   0.15
   2.73
   1.65
   44.4
1.06
1.04
0.07
1.23
0.72
19.9
1.18
0.75
0.10
1.60
0.74
13.8
0.48
0.33
0.04
0.72
0.32
6.19
Treatment of Oils and Total Toxic Organ! cs

The following paragraphs present the oily waste performance data
for combined wastewater in the Metal Finishing Category data base
identify the mean concentrations established 'for oils and total
toxic organics, define the concentration limitations, and com-
pare these limitations with the sampled data base and the DCP data
base for chemical precipitation/sedimentation and polishing
filtration treatment systems.

Combined Wastewater Performance for Oils - Hydroxide Precipitation/
Sedimentation and Oil Skimming

Figure 12-48 presents the oil and grease performance data for the
treatment system data base for properly operating systems.  From
these data the following performance was established for oil and
grease in combined wastewater for hydroxide precipitation/sediment-
ation and oil skimming.

       :          Oil and Grease Performance Data
(Combined Wastewater - Hydroxide Precipitation/Sedimentation and
                            Skimming)
   Mean Effluent Concentration             11.9  mg/1
   Variability Factors  (from Table  12-13)    2.9/1.3
   Daily Maximum Concentration             34.5  mg/1
   30-day Average Concentration            15.5  mg/1

Figure 12-49 presents the oil and grease performance  data  for  the
sampled data base, and  Figure 12-50 presents the  data collection
portfolio (DCP) responses for effluent  oil  and  grease concentrations
from facilities that incorporate hydroxide  precipitation/sedimenta-
tion and oil skimming treatment.  The daily maximum concentration  is
overlayed on each of these  for comparison.   The percentage of  oil
and grease effluent concentrations  that are less  than the  daily
maximum concentration limitation are 100%  for the data base com-
prised of properly operating systems, 90.3% for the MFC data base
and 71% for the MFC DCP data base.
                               XII-59

-------
                                       o   °8
(t/6ui)
               aseaag
 a




ITO
                                                            CO



                                                            O

                                                            M

                                                            EH
                                                            g
                                                            H
                                                            o
                                                            s

                                                            8

                                                            w
                                                            EH
                                                            co
                                                         00 >

                                                         **

                                                          I  CO

                                                         CN 3

                                                         rHQ

                                                            M

                                                         ca EH
Ed

O


§

O
                                                           CQ
                                                           J

                                                           M

                                                           O


                                                           EH
Cu

Cu
             XII-60

-------
                                       a*> a
                                        a  aa
                                       e
                                       o
                                                          en
                                                          25
                                                          O
                                                          M
                                                           ta
                                                           o
                                                           1
                                                           O
                                                           cn
                                                           CO
                                                         i  cn
                                                         CM 3
                                                         tH O
                                                           M
                                                         H E-l
                                                         M
a
a
1
a
                                                           cn


                                                           O


                                                           j
                                                           M
                                                           O
(t/6iu)
                          TTO
                                                            Cu
                                                            Ed
             XII-61

-------
                                                       CQ
                                                       M



                                                       03
                                                       M
                                                       Q


                                                       EH
                                                     I  EL.
                                                    CN  S3
                                                    r-{
                                                       ta
                                                    w  en
                                                    PS  <;
                                                    D  w
                                                      M
                                                      O

                                                      Pi
                                                      o
                                                      1
                                                      cu
                                                      o
                                                      Q
5uant333 assajj)  puv  TTO
         XII-62

-------
Figure 12-51 presents the oil and grease concentration data for
the polishing filtration treatment system data base.  From these
data, excluding the outlier at an effluent concentration of 56 mg/1
which exceeds the hydroxide precipitation/sedimentation and oil
skimming daily maximum concentration limitation, the following
performance results1.

                 Oil and Grease Performance Data

         (Combined Watewater - PojJ.shing_ Filtration!
   Mean Effluent Concentration
   Variability Factor
   Daily Maximum Concentration
   30-day Average Concentration
7.1  mg/1
2.9/1.3
20.6  mg/1
9.2   mg/1
Figure 12-52 shows  the data  collection  portfolio  (DCP)  effluent
concentration distribution for  oil  and  grease  from plants  that in-
corprate a polishing  filtration treatment  system.   The  percen-
tages of combined wastewater oil and  grease  effluent concentrations
that are less than  the daily maximum  concentration limitation
are 88.9% for the MFC sampled data  base and  100%  for the  MFC
DCP data base.

Combined Wastewater Performance for Total  Toxic Organics

As discussed in  Section  -X, the  pollutants  designated Parameters
1 through 88 and 106  through 112 on Table  10-3 are toxic  organics
that commonly occur in  the E&EC Category as  solvent cleaners or
oil additives.   These have been grouped together  for control and
are identified  as Total  Toxic Organics, (TTO).  Figure 12-53
presents the raw waste  concentration  distribution for the Total
Toxic Organics,  (TTO),  in Metal Finishing  Category wastewaters.
The mean concentration  of these TTO is 11.3  mg/1  for the  entire
Metal Finishing  Category data base.  However,  there are three
high outliers  (802.,  285.,  and  74.2 mg/1)  on Figure 12-53.
These are  considered  to  result  from the direct discharge of
TTO from some  source, such as solvent degreaser sumps or spent
solvent  storage, because TTO should enter wastewater streams only
from  cleaning  operations as  rinses.  Removal of these three
outliers as  data not representative of acceptable TTO disposal
lowers  the  raw TTO  mean concentration to 0.38 mg/1.  This mean
raw TTO  concentration is considered characteristic for waste-
waters with  proper  TTO  management practices being applied.  Table
12-11 presents raw  and  effluent total toxic organics performance
from  treatment systems  in the Metal Finishing Category data base
that  have  raw  waste concentrations in the same order of magnitude
as  the  0.38  mg/1 mean raw waste concentration.

The  treatment  technique recommended for the removal of TTO from
manufacturing  process wastewater from semiconductor manufactur-
 ing  and  dielectric  fluid use is carbon adsorption.  Carbon
adsorption is  discussed in  detail  later in  this section.
                                 XII-63

-------
(T/Bui)
                          tTO
                                                              CO

                                                              2

                                                              O
                                                              w
                                                              o

                                                              §
                                                              w
                                                              EH
                                                              CO

                                                              $



                                                              I

                                                              (0
                                                           *H >
                                                           m
                                                            I  CO
                                                           
-------
                                  ' O
                                   r*i
                                              §
                                              M
                                              EH
                                              D
                                              DQ
                                              CQ
                                              M
                                              Q
                                              H
                                              D
                                            CM J
                                            in fa
                                            I  b
                                            CM W
                                            r-H
                                              ta
                                            u cn
                                            ff! <<
                                            D fa
                                            o OS
                                            M C3
                                            Gn
                                              J
                                              M
                                              O
                                               I
                                               O4
                                               o
                                               Q
XII-65

-------
                                          CO
                                          o
                                          u
                                          M
                                          X
                                        LO O
                                        CN
                                          fc)
                                          O
                                        w
                                        « 3
                                        D O
                                        O M
                                        M EH
                                        t, a
                                          CO
                                          M
                                          «
                                          EH
                                          CO
                                          M
                                          a

                                          cq
                                         EH
                                         3
                                         W
XII-66

-------
                         TABLE  12-11
J. W J.JT\±J J. \.'**-L,Nrf VA-W^J*.*^* •*-*** i
Plant ID
02032 :

04071
06090
06091
06960
17050
19068
21051

27046 i

30054
Mean Concentration
Concentration
Raw TTO
1.247
0.121
0.238
0.486
0.149
0.189
1.083
0.477
0.297
0.421

0.179
0.225
0.608
0.44
(mg/1)
Effluent TTO
0.077
0.081
0.040
0.052
0.019
0.079
0.030
0.047
0.020
0.012
0.020
0.016
0.012
0.067
0.04
Based upon the data of Table 12-11,
summarized.
the following performance is
  Total Toxic Organic Performance - Metal Finishing Category
  Mean Effluent Concentration
  Variability Factor
  Daily Maximum Concentration
  30-day Average Concentration
         Do 04  mg/1
         2,9/1.3
         0.12  mg/1
         0305  mg/1
                                  XII-67

-------
 INDIVIDUAL TREATMENT TECHNOLOGIES
  ™*        ProYides descriptions of  individual  recovery  and
 treatment technologies that are used or  intended  for  use in most
 plants engaged in E&EC manufacturing.  Each description includes
 a functional description and discussions of application and per-
 formance, advantages and limitations,  operational  factors  of reli-
 ability, maintainability, and solid waste aspects, and demonstra-
 tion status.

 Table 12-12 lists the technologies and shows their specific
 application to E&EC manufacturing and  the page on which they
 are described.  Table 12-13 shows the  applications of each
 technology in terms of the waste characteristics subcategories
 listed above.

 HYDROXIDE PRECIPITATION                   |

 Dissolved' heavy metal ions are often chemically precipitated as
 hydroxides so that they may be removed by physical means such
 2on?S S2f2t^i°^ ^ration,  or. centrifugation.   Reagents  com-
 monly used to effect this precipitation include alkaline compounds
 such  as  lime and  sodium hydroxide.   Calcium  hydroxide precipitates
 triyalent chromium and  other metals  as metal hydroxides and pre-
 cipitates phosphates as  insoluble  calcium phosphate.   These treat-
 ment  chemicals  may be added  to  a  flash mixer or rapid mix  tank, or
 ?infC!:;;YH~0  fc?? ?<|dimentation  device.   Because  metal  hydroxides
 tend  to be colloidal in  nature, coagulating  agents may also be
 added  to  facilitate  settling.   Figure  12-54  illustrates typical

raeS£tionPaevicetati°n equipment as wel1  as,  the associated  sedi-


After  the solids  have been removed, final pH adjustment may be
required  to  reduce the high pH created  by the alkaline tSatSSnt
chemicals.
                                XH-68

-------
a
CD
                   01











rH
1
CN
rH
Ed

CQ
jrf
EH
























1
.








Cu CQ
CDta
IH
S3 O
CDO
(-H (J
EH O
xGZ
CJBB
M O
1.4 Ed
Cl4 EH
ni: J
UPS
M EH
Cu 53
MO
o o
lid
(^ Q
<« 2:
Q
13 EH
.353
:x s
ia EH
p <
Z Ed
IH PS
EH












i
i
Z
O
(H
O
f 1
P4
<
J
M
EH
z
Cd
EH
O
CV
APPLICATION OR





























4PONENT
O

<
0
M
OS
EH

Ed
Ed

Q
5
TO ELECTRONIC I








































MANUFACTURING

































01
O
•H
C
10
01

o
CU
o
1
rH

























c
o
•H
JJ


c
O tH
•H <0
-p >
o o
3 g
rQ CU
CU Vl
^ 0)
g -p
3 10
C?"g ft
03 4J
r0 (0 <1)
•H 4JX! C
rH C Ol-H
O (U 01 rH CTl
01 3 O (0 C
rHX! ^! "H
rQ 
•H rH g O tO
U U CO V)
 c cu
T3 rH O>O H
U
o
J
o
z
33
Ed
EH
f^
01
•o

c
o
JQ
<0
o
4-1 J3 M
tOCJ Oi
3 rH rH

•H O O
Vl -H -H
P e s
c cu cu
<0 J3 J3
OCJ O














c
o
•H
4J
C RJ C
O Vi O
•H 4J-H
4J rH 4J
<0 -H tO C
Vi fa Vi O
4J 4J -H
rH rQiH -P
•H CU-H (0
[V[ pQ fi| Vl
1 1
CU Vl CU rH
Vl 10 C -H
3 rH tO '1 1
0>C 03 3 Vi (0
C O CO CX! Vi
•H-r-l 0) fO g 4J
O f i* M Jj Q) r*4
03  10 rH
C rH 10
•H O 4J
other
nd solids
"S

6
ro
CU
>
rH
O
CO 01
Sludge dewater
Dewatering of
Recovery of me
Removal of oil
Removal of dis
particles

















en
c
•H
C C
O cu
•rH ^^
4J O
(0 -H
Vl .£
4J EH
rH
•H CU
Ou CT>
"O CU
g 3 DI
3 rH C
3 CQ tO
O X!
(0 ^t U
> 4J X
•H Ed
m c
Vl O
CJ M



























01
•H
01
{71 O
i C g
•H 01
go
g
•H CU
^ 01
CQ Vl
CU
rH >
•H CU
O 05
to
01
cu
4J
to
4J
•H
O4
•H
U
cu
Vl
&l
o>
rH C
10 -H
Removal of met
Sludge dewater















c
o
•H
4J
10
o
•H
4-1
•H
Vl
10 CT>
rH G
CJ 'H
^^ ^i
0 Q
•H
4J "O
10 CU
4J (O
C
cu cu
€ tji
•rH 'O
*O i3
0) rH
cn w
                    XII-69

-------
            ca <
            Q >
            M o
            J S
            o ca
            ca «
                    I  X I  I
                                      X « X
                                                1  X X  X X
   ca
   s ca
   EH ca
  (=C
  ca
     o
  « O

     o
7°
  o
MM

COO

EHD
     93
     O
     cq
     EH
            ca
            O
            M
     EH
     "Z,
     O
     O
         u
EH « oa
   O «
   ca
Q O
pa M j
!> 2 <

ggg
ca eJ s
ca o ca
M a «
Q M
                           I  X
                                    I  I   I
                                             I   I  X X X I
                   X  I X X
                                    I  X I
                                             I  X  1  X I
  ca

  ca
  o
  ^3 ^^

  M O
  O S
     ca
                   I  I I
                                        X I
                                                 X
                                                      X I













ECHNOLOGY
EH











C
O
arbon Adsorpti
o

c
o
•H
4J
O
3
•a
a>
«

e
•a
entrifugation
hemical Chromi
CJCJ






c
o
•H
4J

c
•H
C C
o a)
•H AJ
4J U
<0-H
H.C
•U EH
«H
•H QJ
b CD
~'°
e 9
SiH
SCO
o
rtJ >1
>4J
•H
<8
V4
C5













on Exchange
il Skimming
MO













averse Osmosis
«

c
o
•H
4J
(0
o
•H
IM
•H
J>j
nj 91
r-l C
adimentation/c:
ludge Bed Dryii
ca co
                                            XII-70

-------
           RAPID SEDIMENTATION
           AND CONTINUOUS
           GRAVITY DRAINAGE
        TUBE
        CLARIFICATION
INLET
WASTEWATER
            CHEMICALS
    RAPID
    MIX TANK
FLOCCULATOR
DRIVE
         COLLECTION
         TROUGH

           J'W I
CLARIFIED
EFFUENT
             FLOCCULATOR
                     SLUDGE
                   FLOCCULATOR
                   TUBE
                   CLARIFIER
                    SLUDGE COLLECTOR
                 SLUDGE
                 SIPHON
                        FIGURE 12-54

             CHEMICAL PRECIPITATION AND SEDIMENTATION
                        IW A CLARIFIER
                           •'XII-71

-------
 Application and Performance

 Hydroxide precipitation  is used  in  the E&EC Category  for precipita-
 tion of dissolved metals and phosphates.  It  can be utilized  in
 conjunction with a solids removal device such as a clarifier  or
 filter for removal of metal ions such as iron, lead,  tin, copper,
 zinc, cadmium, aluminum, mercury, manganese,  cobalt,  antimony,
 arsenic, beryllium, molybdenum,  and trivalent chromium.  The  pro-
 cess is also applicable  to any substance that can be  transformed
 into an insoluble form like soaps, phosphates, fluorides, and
 a variety of others.

 The performance of hydroxide precipitation depends on several
 variables.  The most important factors affecting precipitation
 effectiveness are:
1.
2.
3.
           Addition of sufficient excess anibns to drive the
           precipitation reaction to completion.

           Maintenance of an alkaline pH throughout the precip
           itation reaction and subsequent settling  (Figure
           12-55 details the solubilities of; various metal
           hydroxides as a function of pH).

           Effective removal of precipitated, solids (see
           appropriate solids removal technologies).
 If  the  treatment chemicals are not present in slight excess concen
 trations,  some  metals will remain dissolved in the waste stream.

 Advantages and  Limitations

 Hydroxide  precipitation has proven to be -an effective technique
 for removing many pollutants from industrial wastewater.  It
 operates at ambient  conditions and is well suited to automatic
 control.   Lime  is usually  added as a slurry when used in hy-
 droxide precipitation.   The slurry must  be kept well mixed and
 the  addition lines periodically checked  to prevent blocking,
which may  result  from a buildup of solids.   The use of  hydroxide
precipitation does produce large quantities of  sludge requiring
disposal following precipitation and settling.   The use of treat-
ment chemicals  requires caution because  of  the  potentially
hazardous  situation  involved with the  storage and handling of
those chemicals.  Recovery of the precipitated  species  is  some-
times difficult because of the homogeneous  nature of most
hydroxide  sludges  (where no single  metal hydroxide is present
in high concentrations)  and  because  of the  difficulty in smelt-
ing which  results from  the  interference  of  calcium compounds.
                                XII-72

-------
                          5    6   7    8   9   10   II   12   13
2   3
1. Plotted data for metal sulfides based on experimental data listed
   in Seidell's solubilities.

2. Solubilities for metal hydroxides are taken from Curves by Freedmari
   and Shannon,"Modern Alkaline Cooling Water Treatment," Industrial
   Water Engineering, Page 31, {Jan./Feb. 1973).

                         FIGURE 12-55

       COMPARATIVE  SOLUBILITIES OF METAL HYDROXIDES
             AND SULFIDE  AS A FUNCTION  OF pH

                               XII-73

-------
 Operational Factors


 Reliability:  The reliability of hydroxide precipitation is high,
 although proper monitoring, control, and pretreatment to remove
 interfering substances is required.

 Maintainability;  The major maintenance needs involve periodic
 upkeep of monitoring equipment, automatic feeding equipment,
 mixing equipment, and other hardware.  Removal of accumulated
 sludge is necessary for efficient operation of precipitation/
 sedimentation systems.

 Solid  Waste Aspects;  Solids which precipitate out are removed
 in  a subsequent treatment step.  Ultimately,  the solids must be
 properly disposed of.   Proper disposal practices are discussed
 later  in this section under Treatment of Sludges,

 Demonstration Status

 Hydroxide precipitation of metals is a classic waste treatment
 technology used by most industrial waste treatment systems.
 As  noted earlier,  sedimentation to remove precipitates is  dis-..
 cussed separately;  however,  both techniques have been illustrated
 in  Figure 12-54.

 SEDIMENTATION

 Sedimentation is  a process which removes solid particles from a
 liquid  waste  stream by gravitational force.   The operation  is
 effected  by  reducing the  velocity of the feed stream in a  large
 volume  tank  or lagoon  so  that  gravitational  settling can occur.
 Figure  12-56  shows  two typical  sedimentation  devices.

Wastewater  is  fed  into a  high  volume tank or  lagoon  where  it loses
 velocity  and  the  suspended solids are  allowed" to settle out.   High
 retention  times are  generally  required  (the plants  in  the data base
used retention  times ranging from 1  to  48 hours).  Accumulated
sludge  can be  collected and  removed  either periodically or contin-
uously  and either manually or mechanically.
                                XII-74

-------
Stdimantstion Basin

          Inlet Zone



Inlet Liquid
  Baffles To Maintain
"Quiescent Conditions
 Settled Particles Collected
 And Periodically Removed
  Circular Clarifier
            Partfcle«Trajlctdrve
              «   "«.
Outlet Zone


      Outlet Liquid
                          Belt-Type Solids Collection Mechanism
                               Inlet Liquid
                    Circular Baffle

                             Annular Overflow Weir
                                                                              Outlet Liquid
           Settling Zone
              Revolving Collection
                 Mechanism
                                                                            Settling Particles
                                Settled Particles  "T          Collected And Periodically Removed
                                                 1 Sludge Drawoff
                                          FIGURE  12-56

                               REPRESENTATIVE TYPES OF SEDIMENTATION

                                                  XII-75

-------
  Inorganic  coagulants  or polyelectrolytic  flocculants  are added
  to enhance coagulation.   Common inorganic coagulants  include
  sodium sulfate,  sodium  aluminate,  ferrous or ferric sulfate,  and
  ferric chloride.  Organic polyelectrolytes vary  in structure,
  but all usually  form  larger  floccules  than coagulants used  alone.

  The use of  a clarifier  for sedimentation  reduces  space requirements,
  reduces retention time,  and  increases  solids  removal  efficiency.
  Conventional clarifiers  generally  consist of  a circular or  rec-
  tangular tank with a  mechanical  sludge collecting device or with
  a sloping  funnel-shaped  bottom  designed for  sludge collection.
  In advanced clarifiers,  inclined plates,  slanted  tubes,  or  a
  lamellar network may  be  included within the  clarifier  tank  in
 order to increase the effective  settling  area.  A more  recently
 developed  "clarifier" utilizes  centrifugal force  rather  than
 gravity to effect the separation of solids from a liquid.   The
 precipitates are forced outward  and accumulate against  an outer
 wall,  where they can  later be collected.  A fraction of  the sludge
 stream is often recirculated to  the clarifier inlet,  promoting
 formation of a denser sludge.

 Application                                  1

 Sedimentation is used in the E&EC Category to remove precipitated
 metals,  phosphates,  and suspended solids.   Because most metal
 ion pollutants are easily converted to solid metal hydroxide
 precipitates,  sedimentation is of particular.use in industries
 associated  with metal finishing and in other industries with hiqh
 concentrations of metal  ions  in their wastes.  In addition to
 heavy  metals,  suitably precipitated materials effectively removed
 by sedimentation/clarification include aluminum,  manganese,  cobalt,
 arsenic,  antimony, beryllium, molybdenum,  fluoride,  and phos-
 phate.

 A properly  operating  sedimentation  system  is capable of efficient
 removal of  suspended  solids,  precipitated  metal  hydroxides,  and
 other  impurities  from  wastewater.  The  performance of  the process
 depends on  a variety  of  factors, including the effective charge  on
 the suspended particles  (adjustments  can be made  in the type and
 dosage of flocculant or  coagulant)  and  the types  of chemicals
 used in prior treatment.   It  has been  found t;hat  the site of floc-
 culant or coagulant addition  may significantly influence the
 effectiveness of  sedimentation.   If the flocculant is  subjected
 to too much  mixing before entering  the  settling device,  the
 agglomerated complexes may be broken up and the settling effec-
 tiveness diminished.   At  the  same time, the flocculant must
have sufficient mixing in order  for effective  set-up and settling
to occur.  Most plant  personnel  select  the line or trough leading
into the clarifier as  the  most efficient site  for  flocculant
addition.  The performance of  sedimentation is 'a function of the
                                  XII-76

-------
retention time, particle size and density, and the surface area of
the sedimentation catchment.

Sampling visit data from plant 40063, a metal finishing and por-
celain enameling facility, exemplify efficient operation of a
chemical precipitation/settling system.  The following table pre-
sents sampling data from this system, which consists of the addition
of lime and caustic soda for pH adjustment and hydroxide precipita-
tion, polyelectrolyte flocculant addition, and clarification.  Sam-
ples were taken of the raw waste influent to the  system and of the
clarifier effluent.  Flow through the system is approximately
18,900 LPH (5000 GPH).  Concentrations are given  in mg/1.  The ef-
fluent pH shown in the table reflects readjustment with sulfuric
acid after solids removal.  Parameters which were not detected are
listed as ND.
                                    Day  2
Day 3

pH Range
TSS
Al
Co
Cu
Fe
Mn
Ni
Se
Ti
Zn
jwwjr
Inf.
9.2-9.6
4390
37.3
3.92
0.65
137
175
6.86
28.6
143
18.5
Eff .
8.3-9.8
9.0
0.35
ND
0.003
0.49
0.12
ND
ND
ND
0.027
Inf.
9.2
3595
38.1
4.65
0.63
110
205
5.84
30.2
125
16.2
Eff.
7.6-8.1
13
0.35
ND
0.003
0.57
0.012
ND
ND
ND
0.044
Inf.
9.6
2805
29.9
4.37
0.72
208
245
5.63
27.4
115
17.0
Eff.
7.8-8.2
13
0.35
ND
0.003
0.58
0.12
ND
ND
ND
0.01
 TSS  levels were below 15 mg/1 on each day, despite raw waste
 TSS  concentrations of over 2800 mg/1.  Effluent pH was maintained
 at approximately 8 or above, lime addition was sufficient to
 precipitate most of the dissolved metal ions, and the flocculant
 addition and clarifier retention served to effectively remove
 the  precipitated solids.
                                    XII-77

-------
 Advantages and Limitations                    !

 The major advantage of simple sedimentation is the simplicity of
 the process itself - the gravitational settling of solid parti-
 culate waste in a holding tank or lagoon.  The major disadvantage
 of sedimentation involves the long retention times necessary to
 achieve complete settling, especially if the specific gravity
 of the suspended matter is close to that of water.

 A clarifier is more effective in removing slow settling suspended
 matter in a shorter time and in less space than a simple sedimen-
 tation system.  Also, effluent quality is often better from a
 clarifier.  The cost of installing and maintaining a clarifier is,
 however,  substantially greater than the costs associated with
 sedimentation lagoons.

 Inclined  plate, slant tube,  and lamellar clarifiers have even
 higher removal efficiencies  than conventional Iclarifiers,  and
 greater capacities per unit  area are possible.  Installed  costs
 for these advanced clarification systems are claimed to be one
 half the  cost of conventional systems of similar capacity.

 Operational  Factors                           ;

 Reliability;   Sedimentation  is a highly reliable technology for
 removing  suspended solids and precipitates.   Proper treatment
 of the wastewater prior to sedimentation (precipitation and coagu-
 lant addition)  is essential  for continued efficient operation.
 Those advanced clarifiers using slanted tubes,  inclined plates,
 or a lamellar network may require pre-screening of the waste in
 order to  eliminate any fibrous materials which could potentially
 clog the  system.

 Maintainabil i ty ;   When clarifiers are used,  the associated system
 utilized  for  chemical pretreatment and  sludge  dragout must be
 maintained on  a regular basis.   Routine maintenance of mechanical
 parts  is  also  necessary.   If  lagoons  are used,  little maintenance
 is  required other than periodic sludge  removal.
      Waste Aspects;  Rather  large  quantities  of  sludge  are  generated
and can be dewatered  to  facilitate  handling.   Further  appropriate
disposal is required  (see Treatment of  Sludges).

Demonstration Status

Sedimentation in conjunction  with hydroxide precipitation  (the
Option 1 system) represents the  typical method of solids removal
and is employed extensively in industrial waste treatment.   The
advanced clarifiers are  just  beginning  to appear  in  significant
numbers in commercial applications,  while the  centrifugal  force
"clarifier" has yet to be used commercially.   Sedimentation  or
clarification is used in 13 plants  in the E&EC Category.
                                 Xii-78

-------
SULFIDE, PRECIPITATION

Hydrogen sulfide or soluble sulfide salts such as sodium sul-
fide are used to precipitate many heavy metal sulfides.  Since
most metal sulfides are even less soluble than metal hydroxides
at alkaline pH levels, greater heavy metal removal can be ac-
complished through the use of sulfide rather than hydroxide
as a chemical precipitant prior to sedimentation.  The solu-
bilities of metallic sulfides are pH dependent and are shown
in Figure 12-56.

Sampling data from three industrial plants using sulfide preci-
pitation are presented in Table 12-14.  Concentrations are given
in mg/1.
                         Table 12-14
                 Sampling Data From Sulfide
            Precipitation/Sedimentation Systems
Data Source    Reference 1
Treatmemt
  Lime,  FeS, Poly-
  Electrolyte,
  Settle,  Filter
          Reference 2

          Lime,  FeS, Poly-
          Electrolyte,
          Settle, Filter
                    Reference 3

                    NaOH, Ferric
                    Chloride", NaS,
                    Clarify (1 stage)
Cr, T
Cu
Fe
Ni
Zn     ;

Reference:
  Raw

5.0-6.8
  25.6
  32.3

  .52

  39.5
Eff.

8-9
<.01
<.04

.10

<.07
Raw

7.7
.022
2.4

108
.68
33.9
                                              Eff.

                                              7.38
                                              <.020
0.6
          Raw

          27
          11.4
          18.3
          .029
          .060
Eff.

6.4
<.005
<.005
.003
.009
1.   Treatment  of  Metal  Finishing  Wastes  by Sulfide Precipitation,
     EPA Grant  No.  S804648010
2.   Industrial Finishing,  Vo.  35, No.  11,  Nov.  1979,  p.  40 (Raw
     waste  sample  taken  after  chemical  addition).
3.   Visit  Plant 27045.   Concentrations are two  day averages.

In  all-cases  except iron,  effluent concentrations  are  below 0.1 mg/1
and in  many cases  below  0.01 mg/1  for the three  plants studied.

Sampling data from several chlorine/caustic inorganic  chemicals
manufacturing plants using sulfide precipitation reveal effluent
mercury concentrations varying between  0.009 and 0.03  mg/1.  (Cal-
span Report No. ND-5782-M-72).   As can  be seen in Figure 7-65,  the
solubilities  of PbS and  Ag2S are lower  at alkaline pH  levels than
bench scale tests  conducted on several  types of  metal  finishing
wastewater  (Centec Corp; EPA Contract 68-03-2672)  indicate that
metals  removal  to  levels of less than 0.05 mg/1  and in some
                                XII-79

-------
 cases less than 0.01 mg/1  are  common  in  systems  using  sulfide
 precipitation followed by  clarification.   Some of  the  bench  scale
 data, particularly  in the  case of  lead,  do not support such  low
 effluent concentrations.   However, no suspended  solids data  were
 provided in these studies.  TSS removal  is a  reliable  indicator
 of precipitation/sedimentation system performance.   Lack  of  these
 data makes it difficult to fully evaluate  the bench  tests and  in-
 sufficient solids removal  can  result  in  high  metals  concentrations
 Lead is consistently removed to very  low levels  (less  than 0.02
 rag/1) in systems using hydroxide precipitation and sedimentation.
 Therefore one would expect even lower effluent concentrations  of
 lead resulting from properly operating sulfide precipitation sys-
 tems due to the lower solubility of the  lead  sulfide compound.

 Of particular interest is  the ability of the,-ferrous sulfide pro-
 cess to precipitate hexavalent chromium  (Cr   ) without prior re-
 duction to the trivalent state as  is  required in the hydroxide
 process, although the chromium is  still precipitated as the  hy-
 droxide.  When ferrous sulfide is  used as  the precipitant, iron
 and sulfide act as reducing agents for the hexavalent  chromium.
2FeS
2Fe(OH)3 + 2Cr(OH)3 + 2S'
                                                         2OH"
 In this case the sludge produced consists mainly of ferric hydrox-
 ides and chromic hydroxides.  Some excess.hydroxyl ions are pro-
 duced in this process, possibly requiring a downward re-adjustment
 of pH to between 8-9 prior to discharge of the treated effluent.

 Advantages and Limitations

 The major advantage of the sulfide precipitation process is that
 due to the extremely low solubilities of most metal sulfides, very
 high metal removal efficiencies can be achieved.  Also, the sulfide
 process has the ability to remove chromates-and dichromates with-
 out preliminary reduction of the chromium to its trivalent state.
 In addition,  it will precipitate metals complexed with most com-
 plexing agents.  However, care must be taken to maintain the pH
 of the solution above approximately 8 in order to prevent the gen-
 eration of toxic hydrogen sulfide has.  For: this reason ventilation
 of the treatment tanks may be a necessary precaution in some in-
 stallations.   The use of ferrous sulfide virtually eliminates the
 problem of hydrogen sulfide evolution, however.  As with hydroxide
 precipitation,  excess sulfide must be present to drive the
 precipitation reaction to completion.  Since sulfide itself is
 toxic,  sulfide  addition must be carefully controlled to maximuze
 heavy metals  precipitation with a minimum of.excess sulfide to
 avoid the  necessity of posttreatment.  At very high excess sul-
 fide  levels  and high pH,  soluble mercury-sulfide compounds may
 also  be formed.  Where excess sulfide is present, aeration of
 the  effluent  stream can aid in oxidizing residual sulfide to the
 less  harmful  sodium sulfate (Na2So.).  The cost of sulfide pre-
 cipitants  is  high in comparison with  hydroxide precipitating agents,
 and disposal  of metallic  sulfide sludges may pose problems.
 Speculation  is  that with  improper handling or disposal  of sulfide
precipitates, hydrogen sulfide may  be released to the  atmosphere
                                XII-80

-------
creating a potential toxic hazard, toxic metals may be leached
out into surface waters, and sulfide might oxidize to sulfate and
release dilute sulfuric acid to surface waters.  An essential
element in effective sulfide precipitation is  the removal of
precipitated solids from the wastewater to a site where reoxidation
and leaching are not likely to occur.                 .

Operational Factors

Reliability;  The reliability of sulfide precipitation is high,
although proper monitoring, control, -and pretreatment to re-
move interfering substances is required.

Maintainability;  The major maintenance needs  involve periodic
upkeep of monitoring equipment, automatic feeding equipment,
mixing equipment, and other hardware.  Removal of accumulated
sludge is necessary for efficient operation of sulfide pre-
cipitation systems.

Solid Waste Aspects;  Solids which precipitate but are removed
in a subsequent treatment step.  Ultimately, the solids must be
properly disposed of.  There is disagreement over the accepta-
bility of s'ulfide and other sludges for landfill, as discussed
above.

Demonstration Status

Pull scale commercial sulfide precipitation units are in opera-
tion at numerous installations.

PRESSURE FILTRATION                 •

Description of the Process

Pressure filtration is achieved by pumping the liquid through a
filter material which is impenetrable  to the solid phase.  The
positive pressure exerted by the feed  pumps or other mechanical
means provides the pressure differential which is the principal
driving force.  Figure 12-58 represents the operation of one
type of pressure filter.

A typical pressure filtration unit consists of a number of
plates or trays which are held rigidly in a frame to ensure
alignment and are pressed together between a fixed end and a
traveling end.  On the surface of each plate is mounted a
filter made of cloth or a synthetic fiber.  The wastewater is
pumped into the unit and passes through feed holes in the  trays
along the length of the press until the cavities or chambers
between the trays are completely filled.  The  solids in the
water are then entrapped, and a cake begins to form on the
                                 XII-81

-------
  PERFORATED
  BACKING PLATE

              \

 FABRIC
 FILTER MEDIUM
INLET
SLUDGE
                                                FABRIC
                                                FILTER MEDIUM
SOLID
RECTANGULAR
END PLATE
                                                         SOLIDS
                                                      AND FRAMES ARE PRESSED
                                                         DURING FILTRATION
         FILTERED LIQUID OUTLET
                                               RECTANGULAR
                                               METAL PLATE
                                         RECTANGULAR FRAME
                       FIGURE  12-58
                  PRESSURE FILTRATION
                             XII-82

-------
surface of the filter material.  The water passes  through  the
fibers, and the solids are retained.                    .

At the bottom of the trays are drainage ports.  The  filtrate  is
collected and discharged to a common drain.  As the  filter
medium becomes coated with sludge,  the flow of filtrate through
the filter drops sharply, indicating that the capacity of  the ,
filter has been exhausted.  The unit must then be  cleaned  of
the sludge.  After the cleaning or  replacement of  the filter
media, the unit is again ready for  operation.

Application and Performance                                 T

Pressure filtration is a technique  which can be found in many
industry applications concerned with removing solids from  their
waste stream..  In a typical pressure filter, chemically"pre-
conditioned sludge detained in the  unit for one to three hours
under pressures varying from 5 to 13 atmospheres exhibited
final moisture content between 50 and 75 percent.

Advantages and ^Limitations                •                :   -.•'•',.

The pressures which may be applied  to a sludge for removal of
water by filter presses that are currently available range from
5 to 1,3 atmospheres.  Pressure filtration .may also reduce  the
amount of chemical pretreatment required.  The sludge, retained
in the form of the filter cake, has a higher percentage of
solids] than either a centrifuge or  vacuum filter yield.  Thus,
the sludge can be easily accommodated by materials handling
systems.

Two disadvantages associated with pressure filtration in  the
past have .been the short life of the filter cloths and  lack of
automation.  New synthetic fibers have largely offset the  first
of these problems.  Also, units with automatic feeding  and
pressing cycles are now available.

For larger operations, the relatively high space requirements,
as compared to those of a centrifuge, also can be  considered  as
a disadvantage,

Operation Factors

Reliability;  Assuming proper pretreatments design,  and  control,
pressure filtration is a highly dependable system.
      I
Maintainability;  Maintenance consists of periodic cleaning or
replacement of the filter media, drainage grids, drainage
piping, filter pans, and other parts of  the system.   If  the
removal of the sludge cake is not automated, -additional  time  is
required for this operation.                 *
                                 XII-83

-------
 Solid Waste Aspects;  Because it is generally drier than other
 types of sludges,  the filter sludge cake can be handled with
 relative ease.   Disposal of the accumulated sludge may be
 accomplished by any of the accepted procedures.

 Demonstration Status

 Pressure filtration is a commonly used technology that is
 currently utilized in a great many commercial applications.
 Pressure filtration is used in several E&EC plants.

 MEMBRANE FILTRATION                      I

 Description of  the Process

 Membrane filtration is a technique for removing precipitated
 heavy'metals from  a wastewater stream.  It  must therefore be
 preceded by those  treatment techniques which will properly
 prepare  the wastewater for solids removal.   Typically,  a membrane
 filtration unit is preceded by cyanide and  chromium pretreatment
 as well  as pH adjustment for precipitation  of the metals.
 These steps are followed by addition of a!proprietary chemical
 reagent  which causes-the metal precipitate  to be non-gelatinous,
 easily d.ewatered,  and  highly stable.  The resulting mixture of
 pretreated wastewater  and reagent is continuously recirculated
 through  a filter module and back into a recirculation tank.
 The  filter module  contains tubular membranes.  While the reagent-
 metal precipitate  mixture flows  through the inside of the
 tubes, the water and any dissolved salts permeate the membrane.
 The  permeate, essentially free of precipitate,  is alkaline,
 non-corrosive,  and may be safely discharged to  sewer or stream.
 When the recirculating slurry reaches a concentration of 10 to
 15 percent solids,  it  is pumped  out of the  system as sludge.

 Application and  Performance              :

 Membrane filtration can be used  in E&EC manufacture in  place  of
 sedimentation or clarification to remove precipitated metals
 and  phosphates.  Membrane filtration systems are being  used in
 a number gf industrial  applications,  particularly in the metal
 finishing  industry and  have also been used  for  heavy metals
 removal ,in the paper industry.   They have potential application
 in coil  coating, porcelain enameling,  battery,  and copper and
 copper alloy plants.

The  permeate  is  guaranteed by one manufacturer  to contain less
than  the  effluent  concentrations shown in the following table,
regardless  of the  influent concentrations.   These claims have
been  largely  substantiated by the analysis  of water samples at
various  plants including  those shown for comparison in  the
table.
                                Xll-84

-------
WASTEWATER CONSTITUENT
MEMBRANE FILTER EFFLUENT;  mq/1
                         Guarantee   Plant #19066
                        Plant #31022
                                     Raw
              Treated
Raw
Treated
Aluminum                    0.5
Chromium, hexavalent        0.03
Chromium, total             0.02
Copper;                      0.1
Iron                        0.1
Lead                        0.05
Cyanide                     0.02
Nickel'                      0.1
Zinc                        0.1
TSS                         —-

Advantages and Limitations
       0.46   0.01
       4.13   0.018
       18.8   0.043
       288    0.3
       0.652  0.01
       <0.005 <0.005
       9.56   0.017
       2.09   0.046
       632    <0.1
5.25
98.4
8.00
21.1
0.288
<0.005
194
5.00
13.0
<0.005
 0.057
 0.222
 0.263
 0.01
<0.005
 0.352
 0.051
 8.0
A major advantage of the membrane filtration system  rs  that
installation can utilize most of the conventional end-of-pipe
system that may already be in place.  Also, the sludge  is
highly stable in an alkaline state.  Removal efficiencies  are  ,
excellent, even with sudden variation of pollutant input rates.
However, the effectiveness of the membrane filtration system
can be limited by clogging of the filters.  Because  a change in
the pH of the waste stream greatly  intensifies the clogging
problem, the pH must be carefully monitored and controlled.
Clogging can force the shutdown of  the system and may interfere
with production.

Operational Factors

Reliability;  Membrane filtration has been shown to  be  a very
reliable system, provided that the  pH is strictly controlled.
Improper pH can result in the clogging of the membrane.  Also,
surges in the flow rate of the waste stream must be  eliminated
in order to prevent solids from passing through the  filter and
into the effluent.                                 ,

Maintainability;  The membrane filters must be regularly monitored
and cleaned or replaced as necessary.  Depending on  the composi-
tion of the waste stream and its flow rate, cleaning of the
filters may be required quite often.  Flushing with  hydrochloric
acid will usually suffice.  In addition, the routine maintenance
of pumps, valves, and other plumbing is required.

Solid Waste Aspects;  When the recirculating reagent-precipitate
slurry reaches 10 to 15 percent solids, it is pumped out of the
system.  It can then be disposed of directly or it can  undergo
a dewatering process.  The sludge's leaching characteristics
are such that the state of South Carolina has approved  the
sludge for landfill, provided that  an alkaline condition be
maintained.  Tests carried out by the state indicate that  even
                                  XII-85

-------
 at the slightly acidic pH of 6.5, leachate from a sludge contain-
 ing 2600 mg/1 of copper and 250 mg/1 of zinc contained only 0.9
 rag/1 of copper and 0.1 mg/1 of zinc.

 Demonstration Status

 There are approximately twenty membrane filtration systems pre-
 sently in use by the metal finishing and other industries.
 Bench scale and pilot studies are being run in an attempt to
 expand the list of pollutants for which this system is known to
 be effective.

 No data have been reported showing the use of membrane filtration
 in E&EC manufacturing plants.  However, it is used in electro-
 plating plants and the technology can be transferred to the
 electronics industry discharge.

 GRANULAR BED FILTRATION

 Description of the Process

 Filtration is basic to water treatment technology, and experience
 with the process dates back to the 1800's.  Filtration occurs
 in nature as the surface ground waters are purified by sand.
 Silica sand, anthracite coal, and g"arnet are common filter
 media used in water treatment plants.  These are usually
 supported by gravel. The media may be used,singly or in combin-
 ation.   The multi-media filters may be arranged to maintain-
 relatively distinct layers by virtue of balancing the forces of
 gravity,  flow, and buoyancy on the individual particles.  This
 is accomplished by selecting appropriate filter flow rates
 (gpm/sg ft), media grain size,  and density.

 Granular bed filters may be classified in terms of filtration
 rate,  filter media,  flow pattern, or method  of pressurization.
 Traditional rate classifications are slow sand, rapid sand,  and
 high rate mixed media.  In the  slow sand filter,  flux or hydraulic
 loading is relatively low, and  removal of collected solids to
 clean  the filter is therefore relatively infrequent.  The
 filter  is often cleaned by scraping off the  inlet face (top) of
 the  sand  bed.   In  the higher rate filters, cleaning is frequent
 and  is  accomplished by a periodic backwash,  opposite to the
 direction of normal  flow.

 A  filter  may use a single  medium such as sand or diatomaceous
 earth,  but dual and mixed  (multiple)  media filters allow higher
 flow rates and efficiencies.  Trfe dual media filter usually
 consists  of a  fine bed of  sand  under a coarser bed of anthracite
 coal.   The coarse  coal removes  most of the influent solids,
while  the fine sand  performs  a  polishing function.  At the end
of the  backwash,  the fine  sand  settles to the bottom because it
 is denser than the coal,  and  the filter is ready for normal
operation.  The mixed media filter operates on the same principle,
with the  finer,  denser media  at the bottom and the coarser,
                                 XII-86

-------
less dense media at the top.  The usual arrangement is garnet
at the bottom (outlet end) of the bed, sand in the middle, and
anthracite coal at the top.  Some mixing of these layers occurs
and is, in fact, desirable.

The flow pattern is usually top-to-bottom, but other patterns
are sometimes used. Upflow filters are sometimes used, and in a
horizontal filter the flow is horizontal.  In a biflow filter,
the influent enters both the top and  the bottom and exits
laterally. The advantage of an upflow filter is that with an
upflow backwash the particles of a single filter medium are
distributed and maintained in the desired coarse-to-fine
(bottom-to-top) arrangement. The disadvantage is that the bed
tends to become fluidized, which ruins filtration efficiency.
The biflow design is an attempt to overcome this problem.

The usual granular bed filter operates by gravity flow.  However,
pressure filters are also used.  Pressure filters permit higher
solids loadings before cleaning and are advantageous when the
filter effluent must be pressurized for further downstream
treatment.  In addition, pressure filter systems are often less
costly for low to moderate flow rates.

Figure 12-59 depicts a granular bed filter.  It is a high rate,
dual media, gravity downflow filter,  with self-stored backwash.
Both filtrate and backwash are piped  around the bed in an
arrangement that permits upflow of the backwash, with the
stored filtrate serving as backwash.  Addition of the indicated
coagulant and polyelectrolyte usually results in a substantial
improvement in filter performance.

Auxiliary filter cleaning  is sometimes employed in the upper
few inches of filter beds.  This is conventionally referred  to
as surface wash and is accomplished by water jets just below
the surface of the expanded bed during the backwash cycle.
These jets enhance the scouring action in the bed by  increasing
the agitation.

An important feature for  successful filtration and backwashing
is the ; underdrain.  This  is the support structure for  the bed.
The underdrain provides an  area for collection of the  filtered
water without clogging from either the filtered solids or  the
media grains.  In addition, the underdrain prevents loss  of  the
media with the water, and  during the  backwash cycle  it provides
even flow distribution over the bed.  .Failure to dissipate  the
velocity head during the  filter or backwash  cycle will  result
in bed upset and the need  for major repairs.

Several standard approaches are employed  for  filter underdrains.
The simple'st one consists  of a parallel porous pipe  imbedded
under ai layer of coarse gravel and manifolded to a header  pipe
for effluent removal.  Other approaches  to  the underdrain
system are known as the Leopold and Wheeler  filter bottoms.
Both of these  incorporate  false concrete  bottoms with  specific
                                 XII-87

-------
                                          INFLUENT
                                           VALVE
                             DRAIN
           FIGURE 12-59




GRANULAR BED  FILTRATION EXAMPLE
                XII-88

-------
porosity configurations  to provide drainage  and  velocity  head
dissipation.

Filter system operation  may be manual or  automatic.   The  filter
backwash cycle may be on a timed basis, a pressure drop basis
with a terminal value wich triggers  backwash,  or a solids
carryover basis from turbidity monitoring of  the outlet 'stream.
All of these schemes have been successfully  used.

Application and Performance

Granular bed filters can be used in  E&EC  manufacturing plants
to remove residual solids from clarifier  effluent.   Filters  in
wastewater treatment plants are often employed for polishing
following clarification, sedimentation, or other similar  oper-
ations.  Granular bed filtration thus has potential  application
to nearly all industrial plants.  Chemical additives which
enhance the upstream treatment equipment  may  or  may  not be
compatible with or enhance the filtration process.   It should
be borne in mind that in the overall treatment system, effective-
ness and efficiency are  the objectives, not  the  performance  of
any single unit.  The volumetric fluxes for  various  types of
filters "are as follows:
     Slow Sand
     Rapid Sand
     High Rate Mixed Media
 2.04 - 5.30 1/min/sq m
40.74 - 81.48 1/min/sq m
122.2 - 611 1/min/sq m
Suspended solids are commonly removed  from wastewater  streams
by filtering through a deep 0.3-0.9 m  (1-3 feet)  granular
filter bed. The porous bed formed by the granular media  can  be
designed to removal practically all suspended particles.   Even
collodial suspensions (roughly 1 to 100 microns)  are adsorbed
on the surface of. the media grains as  they pass  in close
proximity in the narrow bed passages.

Properly operating filters following some pretreatment to
reduce suspended solids well below 200 mg/1  should produce
water with less than 10 mg/1 TSS.  Pretreatment  with inorganic
or polymeric coagulants can improve poor performance.

Advantages and Limitations

The principal advantages of granular bed filtration are  its  low
initial and operating costs and reduced land requirements  over
other methods,to achieve the same level of solids removal.

However, the filter may require pretreatment if  the solids
level is high (above 100 to 150 mg/1).  Operator training  is
fairly high due to controls and periodic backwashing,  and
backwash must be stored and dewatered  to be  disposed of
economically.
                                 XII-89

-------
 Operational  Factors

 Reliability;   The  recent  improvements  in filter  technology  have
 significantly  improved  filtration reliability.   Control  systems,
 improved  designs,  and good  operating procedures  have  made
 filtration a highly  reliable  method of water treatment.

 Maintainability;   Deep  bed  filters may be operated  with  either
 manual  or automatic  backwash.   In either case, they must be
 periodically inspected  for  media  attrition,  partial plugging,
 and leakage. Where backwashing  is not  used,  collected solids
 must be removed by shoveling, and filter media must be at least
 partially replaced.

 Solid Waste  Aspects;  Filter  backwash  is generally  recycled
 within  the wastewater treatment system,  so that  the solids
 ultimately appear  in the  clarifier sludge stream for  subsequent
 dewatering.  Alternatively,  the  backwash  stream may  be dewatered
 directly  or, if there is  no backwash,  the collected solids  may
 be suitably  disposed.   In either  of these situations  there  is a
 solids  disposal problem similar to that  of clarifiers.

 Demonstration  Status                     '•

 Deep bed  filters are in common  use in  municipal  treatment
 plants. Their  use  in polishing  industrial clarifier effluent  is
 increasing,  and the  technology  is proven and conventional.

 ULTRAFILTRATION

 Description  of the Process

 Ultrafiltration (UF) is a process using  semipermeable polymeric
 membranes to separate emulsified  or colloidal materials  dis-
 solved  or suspended  in  a  liquid phase  by pressurizing the
 liquid  so that it  permeates the membrane.   The membrane  of  an
 ultrafilter  forms  a  molecular screen which separate molecular
particles based on their  differences in  size, shape,  and chemical
 structure.  The membrane  permits  passage of  solvents  and lower
molecular weight solutes  while  barring dissolved or dispersed
molecules above a  predetermined size.  At present,  an ultrafilter
 is capable of  removing  materials  with  molecular  weights  in  the
range of 1,000 to  100,000.

 In an ultrafiltration process,  the feed  solution is pumped
 through a tubular membrane  unit.   Water  and  some low  molecular
weight materials pass through the membrane under the  applied
pressure of 0.767 kg/cnr  (10 to 100 psig).   Emulsified oil
 droplets and suspended  particles  are retained, concentrated,
 and removed continuously.   In cpntrast to'ordinary  filtration,
 retained materials are  washed off the  membrane filter rather
 than held by the filter.  Figure 12-60  illustrates the ultrafil-
 tration process.
                                 XII-90

-------
ULTRAFILTRATION
\
                            MACROMOLECULES


                                         J*
P=10-50 PSI  %
  MEMBRANE
                                  M
                                   WATER    SALTS
                                        •MEMBRANE
             PERMEATE
                                         u
           O- • r»* *r> * O *   •   *  * O * O«  •'  • *
          FEED*  *Q * ^>«»* ^. •* °*  *;o* *. 'CONCENTRATE

           • 6   *o • o  .  e °   e  / ° o    * °  ^
                                            T
          O  OIL  PARTICLES  oDISSOLVED SALTS AND LOW-

                              MOLECULAR-WEIGHT ORGANICS
                     FIGURE 12-60


      SIMPLIFIED ULTRAFILTRATION FLOW SCHEMATIC
                           XII-91

-------
 The pore  structure  of  the  membrane  acts  as  a  filter,  passing
 small particles,  such  as salts,  while  blocking  larger emulsified
 and suspended matter.  The pores of  ultrafiltration membranes
 are much  smaller  than  the  blocked particles.  Therefore,  these
 particles cannot  clog  the  membrane  structure.   Clogging of  the
 membrane  by particles  near the minimum removal  size can be
 minimized by proper selection of the membrane to  suit the
 wastewater to be  treated.

 Once a membrane is  chosen  that provides  maximum attainable
 removal of the desired particles, the  next  most important
 design criterion  is the membrane capacity or flux.  Flux  is the
 volume of water passed through the membrane area  per  unit time.
 The standard units  are cu  m/day/sq m (gpd/sq ft).  The typical
 flux is 0.42 to 8.48 cu m/day/sq m  (5  to 1000 gph/sq  ft).  Both
 membrane equipment and operating costs increase with  the membrane
 area required.  It  is, therefore, desirable to  maximize flux.

 Membrane flux is normally  dependent on operating pressure,
 temperature,  flux velocity, solids concentration  (both total
 dissolved solids and total suspended solids), membrane permeabil-
 ity,  membrane thickness,  and fluid viscosity.  Membrane flux is
 also affected by the surface tension of the solution  being
 processed.  With a fixed  geometry, membrane flux will increase
 as the^fluid  velicity is  increased in the system.   This increase
 in fluid velocity will require greater capacity and more horse-
 power.   Less  membrane area is,  therefore, required per unit of
 effluent to  be treated with higher fluid  velocities;  membrane
 replacement  and  initial capital  costs decrease.   Opposing these
 cost decreases is the  increase  in power and  its resultant cost.

 Application  and  Performance
                                            i
 Oltrafiltration  has  potential  application to E&EC  manufacturing
 plants for separation  of  oils  and residual  solids  from a variety
 of  waste  streams  and for  regeneration of  alkaline  baths associated
 with ancillary metal working  and  metal  cleaning.  Successful
 commercial use has been thoroughly demonstrated  for separation
 of  emulsified oils from wastewater.   Over one hundred  such
 units are  now  in  operation  in  the United  States, treating
 emulsified oils from a  variety of industrial processes.   Currently
 operating  units have capacities of from a few hundred  gallons  a
 week to 50,000 gallons  per  day.   Concentration  of  oily emulsions
 to  60% oil or more is possible.   Oil  concentrates  of 40%  or
 more are generally suitable for incineration, .and  the  permeate
 can be treated further  and  in some cases  recycled  back to  the
process.   In this  way,  it is possible to  eliminate contractor
 removal costs for  oil from  some oily  waste streams.

Work is currently  being done in ultrafiltration  systems  to
purify alkaline cleaning baths for re-use.   In  this application,
the contaminated caustic solution is  pumped  through the  ultra-
filter, and oil and  particulate matter  are concentrated within
the membrane. The  alkaline  cleaner solution  permeates  the
                               XII-92

-------
membrane and can be returned to the process bath.  The membrane
is designed to withstand pH within the range of 9-13.  Contami-
nants present in the concentrate are further concentrated,
reclaimed, incinerated,*or dispoiled of brother means.

The following test data indicate ultrafiltration performance
(note that UP is not intended to remove dissolved solids):
Contaminant

Oil (freon extractable)
COD
TSS
Total Solids
Feed (mg/1)

   1230
   8920
   1380
   2900
Permeate (mg/1)

       4
     148
      13
     296
The removal percentages shown are  typical, but  they  can  be
influenced by pH and othe-r  conditions.

The permeate or effluent from the  ultrafiltration  unit  is
normally of a quality that  can be  reused  in  industrial  applica-
tions or discharged directly.  The concentrate  from  the  ultrafil-
tration unit can be disposed of  readily by incineration  for oil
wastes or by standard end-of-pipe  oil  and solids removal from
the low-volume concentrate.

Advantages and Limitations

Ultrafiltration is sometimes an  attractive alternative  to
chemical treatment because  of lower capital  equipment;  install-
ation and operating costs;  very  high oil*  removal efficiency,
independent of influent oil content; little,  if any, pretreatment
required; and because of its compact equipment, which utilizes
only a small amount of floor space. It provides a positive
barrier between oil and effluent.   This eliminates the  possibility
of oil discharge which might occur due to operator error.

A limitation of ultr.afiltration  for treatment of process effluents
is its narrow temperature  range  (181[?C to 301[?C) for satisfactory
operation.  Membrane  life  is decreased with  higher temperatures,
but flux increases at elevated temperatures.   Therefore, surface
area requirements are a function of temperature arid  become a
tradeoff between  initial costs and replacement costs for the
membrane.  In addition, ^ultrafiltration is  unable  to handle
certain solutions.  Strong oxidizing agents,  solvents,  and
other organic compounds can cause dissolution of the membrane.
Fouling is sometimes  a problem.

Operational Factors

Reliability;  The reliability  of an ultrafiltration system is
dependent on  the  proper  filtration of  incoming waste streams to
prevent damaging  the  membrane.
                                 XII-93

-------
 Maintainability;  A limited amount of regular maintenance is
 required for the pumping system.  In addition, membranes must
 be periodically changed.  Maintenance associated with membrane
 plugging can be reduced to selection of a membrane with optimum
 physical characteristics.

 Solid Waste Aspects:  Ultrafiltration is used primarily for
 recovery of solids and liquids.  It therefore eliminates solid
 waste problems when the solids (e.g., paint solids) can be
 recycled to the process.  Otherwise, the stream containing
 solids must be treated by end-of-pipe equipment.

 Demonstration Status

 The ultrafiltration process is well developed and commercially
 available for treatment of wastewater or recovery of certain
 liquid and solid contaminants.  However, no E&EC manufacturing
 plants have reported using ultrafiltration.

 ION EXCHANGE                              ;

 Description of the Process

 Ion exchange is a process in which ions, held by electrostatic
 forces to charged functional groups on the: surface of the ion
 exchange resin,  are exchanged for ions of [similar charge from
 the solution in which the resin is immersed.   This is classi-
 ied as a sorption process because the exchange occurs on the
 surface of the resin,  and the exchanging ion must undergo a
 phase transfer from solution phase to solid phase.  Thus, ionic
 contaminants in a waste stream can be exchanged for the harmless
 ions  of the resin.                         j
                                           I

 Although the precise technique may vary slightly according to
 the application involved,  a generalized process description
 follows.  The wastewater stream being treated  passes through a
 filter to remove any solids,  then flows through a cation exchanger
 which  contains the  ion exchange resin.   Here,  metallic impurities
 such  as copper,  iron,  and trivalent chromium  are retained.   The
 stream then passes  through the anion exchanger and its associated
 resin.  Hexavalent chromium,  for example, is retained in this
 stage.   If  one pass does  not reduce the contaminant levels
 sufficiently,  the stream  may then enter another series of
 exchangers.   Many ion  exchange systems  are;equipped with more
 than  one  set of  exchangers  for this reason;

 The other major  portion of  the ion exchange process concerns
 the regeneration of the resin,  which now hcblds those impurities
retained  from  the waste stream.   An ion exchange unit with in-
place  regeneration  is  shown  in Figure 12-6:)..   Metal ions such
as  nickel are  removed  by  an  acidic cation exchange resin,  which
 is  regenerated with hydrochloric  or sulfuric  acid,  replacing
the metal  ion  with  one  or  more hydrogen ions.   Anions such as
dichromate  are removed  by  a  basic anion exchange resin,  which
                                 XII-94

-------
WASTE WATER CONTAINING
   DISSOLVED METALS
     Oft OTHER IONS
    HEGENERANT TO REUSE.
   TREATMENT, OR DISPOSAL
                                              OIVERTER VALVE
       REGENERANT
        SOLUTION
                                           DIVERTED VALVE
 METAL—FREE WATER
FOR REUSE OR DISCHARGE
                              FIGURE 12-61
                  ION EXCHANGE  W!TH REGENERATION
                                   XII-95

-------
  is regenerated with sodium hydroxide, replacing the anion with
  one or more hydroxyl ions.  The three principal methods employed
  by industry for regenerating the spent resin are:

  A)    Replacement Service;  A replacement service replaces the
       spent resin with regenerated resin, and regenerates the
       spent resin at its own facility.  The service then has the
       problem of treating and disposing of the spent regenerant.

  B)    In-Place Regeneration;  Some establishments may find it
       less  expensive to do their own regeneration.  The spent
       resirt column is shut down  for perhaps an hour, and the
       spent resin is regenerated.   This results in one or more
       waste streams  which must be  treated in an appropriate
       manner.   Regeneration is only performed as the resins
       require  it.

 C)    Cyclic Regeneration;   In this process,  the regeneration of
       the spent  resins  takes place in alternating cycles with
       the ion  removal process.   A  regeneration frequency of
       twice an hour  is  typical.  This very short cycle time
      permits operation  with a very small quantity of  resin and
      with  fairly  concentrated solutions,  resulting  in a very
      compact system.  Again,  this  process varies according to
      application, but the  regeneration cycle  generally begins
      with cfaustic being pumped  through the  anion exchanger,
      carrying out hexavalent  chromium, for  example, as sodium
      dichromate.  The sodium dichromate  stream  then passes
      through a cation exchanger, converting  the  sodium dichro-
      mate to chromic acid.  After  concentration  by  evaporation
      or other means, the chromic acid cai|i be  returned  to  the
      process line.  Meanwhile,  the catioiji exchanger is  regener-
      ated with sulfuric acid, resulting  in a  waste  acid stream
      containing the metallic impurities  temoved  earlier.
      Flushing the exchangers with water  completes the  cycle.
      Thus,  the wastewater is purified and, in this example,
      chromic acid is recovered.  The  ion  exchangers, with newly
      regenerated resin, then enter the ion removal cycle again.

Application and Performance              '
                                          I
Ion  exchange  could be used in E&EC manufacturing plants for
recovery  of copper,  zinc, or other metals from process chemical
baths  and rinses associated with manufacturing.

The  list  of pollutants  for which the ion exchange system has
proven effective include aluminum, arsenic,  cadmium, chromium
(hexavalent and  trivalent),  copper, cyanide,  gold, iron, lead,
manganese,  nickel,  selenium, silver,  tin, zinc and more.  Thus,
it can be applied  to a  wide variety of industrial concerns.
Because of  the  heavy concentrations of metals in their waste
water,  the  electronic and  metal  finishing industries utilize
ion  exchange in  several  ways.  As  an end-of-pipe treatment, ion
exchange  is certainly feasible,  but its  greatest value is in
                              XIi-96

-------
recovery applications.  It is commonly used, however, as an
integrated treatment to recover rinse water and process chemicals.
Also, plating facilities utilize ion exchange to concentrate
and purify their plating baths.  In addition to electronics,
ion exchange is finding applications in the photographic industry
for purification, in battery manufacturing for heavy metals
removal, in the chemical industry, the food industry, the
nuclear industry, the pharmaceutical industry, the  textile
industry, and others.  Ion exchange is already in use in the
E&EC manufacturing industry for production of deionized water,
which is used in large amounts in manufacturing semiconductors,
TV and CRT's and fluorescent lamps.

Ion exchange is highly efficient at recovering metal  finishing
chemicals.  Recovery of chromium, .nickel, phosphate solution,
and sulfuric acid from anodizing is commercial  A chromic  acid
recovery efficiency of 99.5% has been demonstrated.  Typical
data  (Bg/1) for purification of rinse water have been reported
as follows:
Parameter
All Values mg/1
Zinc (Zn)
Cadmium (Cd)
Chromium (Cr+3)
Chromium (Cr+6)
Copper (Cu)
Iron ( Fe )
Nickel (Ni)
.Silver (Ag)
Tin (Sn)
Cyanide (CN)
Manganese (Mn)
Aluminum (Al)
Sulf ate (SO )
Lead (Pb)
Gold (Au)
Plant
Prior To
Purifi-
cation
14.8
5.7
3.1
7.1
4.5
7.4
6.2
1.5
1.7
9.8
4.4
5.6
—
A
After
Purifi-
cation
0.40
0.00
0.01
0.01
0.09
Of\ i
. 01
0.00
0.00
0.00
0.04
0.00
00 f\
. 20
-
Plant
Prior To
Purifi-
cation
-
™
"""
— •
43.0
—
1.60
9.10
1.10
3.40

210.00
1.70
2.30
B
After"
Purifi-
cation
-


~
0.10

0.01
0.01
0.10
0.09

2.00
0.01
0.10
 Advantages and Limitations

 Ion exchange is a versatile technology applicable to a great
 many situations.  This flexibility, along with its compact
 nature and performance, make ion exchange a very effective
 method of waste -water treatment.  However, the resins in these
 systems can prove to be a limiting factor.  The thermal limits
 of the anion resins, generally placed in the vicinity of 60°C,
 could prevent its use in certain situations.  Similarly, nitric
 acid, chromic acid, and hydrogen peroxide can all damage the
 resins as will iron, manganese, and copper when present with
                                    XII-97

-------
  sufficient  concentrations  of  dissolved  oxygen.   Removal  of a
  particular  trace  contaminant  may  be  uneconomical because of the
  presence  of other ionic  species that are  preferentially  removed.
  The cost  of the regenerative  chemicals  can be  high.   In  addition,
  the waste streams originating from  the  regeneration  process are
  extremely high in pollutant concentrations,  although low in
  volume.   These must  be further processed  for proper  disposal.

  Operational  Factors                        '<

  Reliability;  With the exception  of  occasional  clogging  or
  fouling of  the resins, ion exchange  has been shown to  be a
  highly dependable  technology  assuming proper prior treatment of
  the waste stream  has taken place.
                                            i
  Maintainability;  Along with  the  normal maintenance  of pumps,
 valves,,and other hardware, the regeneration process constitutes
  the largest portion of the maintenance requirements.   Unless
 the cyclic  type regeneration  is used, the  regeneration, process
 inevitably  involves the shutdown  of  the ion  exchange units  as
 well as additional labor costs.   In  most  cases,  however,  the
 regeneration process can be effected quickly and easily.

 Solid  Waste Aspects;   Few, if  any, solids  accumulate within the
 ion exchangers,  and those which do appear  are removed by  the
 regeneration process.  Proper prior  treatment and planning  can
 eliminate  solid  buildup problems altogether.  In fact, use of
 ion exchange for recovery avoids sludge generation that would
 result from end-of-pipe treatment.         I

 Demonstration Status                        i

 All the applications  mentioned in  this document are available
 for commercial use.  The  research  and development in ion exchange
 is  focusing  on improving  the  quality and efficiency of the
 resins, rather than new applications.  Work  is  also being done
 on  a continuous  regeneration  process whereby the resins are
 contained  on a fluid-transfusible  belt.   Thte belt passes  through
 a compartmented  tank  with ion  exchange,  washing, and  regeneration
 sections.  The resins  are  therefore continually  used and regenerated
 No  such system, however,  has  been  reported ;to be beyond the
 pilot  stage.

 No  data have been  reported  showing the use of ion exchange in
 treating effluents from E&EC manufacturing plants.  However,
 ion exchange is used  in the production of  dpionized water for
 the semi-conductor and electron tube  industries.

REVERSE OSMOSIS                             \
                                            \
Description  of the  Process                  !

The process  of osmosis involves the passage of  a liquid through
a semipermeable membrane  from  a dilute  to  a;more concentrated
                                XII-98

-------
solution.  Reverse osmosis (RO) is an operation  in which
pressure is applied to the more concentrated solution,  forcing
the permeate to diffuse through the membrane and  into  the more
dilute solution. This filtering action produces  a concentrate
and permeate on opposite sides of the membrane.   The concentrate
can then be further treated or returned  to  the original operation
for continued use, while the permeate water can  be recycled  to
for reuse. Figure 12-62 represents a reverse osmosis system.

As illustrated in Figure 12-63, there are  three  basic  configura-
tions used in commercially available RO  modules:  tubular,
spiral-wound, and hollow fiber.  All of  these  operate  on  the
principle described above, the only difference being  their
mechanical and structural design characteristics.

The tubular membrane module utilizes a  porous  tube with a
cellulose acetate membrane-lining.  A common  tubular  module
consists of a length of  2.54  cm  (1  inch) diameter tube wound on
a  supporting spool  and encased  in  a plastic shroud.   Feed water
is driven into  the  tube  under pressures varying  from  40.8 -
54 4  a1-m  (600-800 psi).  The permeate passes through  the walls
of the"tube and  is  collected  in  a  manifold while the  concentrate
is drained off  at  the  end  of  the  tube.   A less widely used
tubular  RO module  uses a straight  tube  contained in  a housing,
under the same  operating conditions.

Spiral-wound membranes  consist of  a porous backing sandwiched
between  two  cellulose  acetate membrane  sheets and bonded along
three ^dges.  The  fourth edge of the  composite sheet  is attached
to a  large  permeate collector tube.   A spacer screen  is then
placed on top of the  membrane sandwich  and the entire  stack is
rolled around  the  centrally located tubular permeate  collector.
The  rolled  up package  is inserted into a pipe able to  withstand
the  high operating pressures  employed in this process, up to
54.4  atm (800 psi)  with the spiral-wound module.  When the
system is operating,  the pressurized product water permeates
the  membrane and flows through the backing material to the
central  collector tube.   The concentrate is drained off at  the
end  of the  container pipe and can be reprocessed or sent to
 further treatment facilities.

 The  hollow fiber membrane configuration is made  up of a bundle
 of polyamide fibers of approximately 0.0076 cm  (3 mils) OD  and
 0.0043 cm (1.7 mils) ID.  A commonly used  hollow fiber module
 contains several hundred thousand of the  fibers  placed in  a
 long tube,  wrapped around a flow screen, and  rolled  into a
 soiral.  The fibers are bent in a U-shape  and their ends are
 supported by an epoxy bond. The hollow  fiber  unit is  operated
 under 27.2 atm  (400 psi), the feed water  being  dispersed  from
 the  center of the module through a porous  distributor tube.
 Permeate flows  through  the membranes to the  fiber interiors and
 is collected at the ends of  the fibers.
                                 XII-99

-------
                        MACROMOLECULES
                           i AND
                           SOLIDS
                                     =430 PS1
MEMBRANE
                      WATER
       PERMEATE (WATER)
 FEED
                          MEMBRANE CROSS SECTION.
                          IN TUBULAR. HOLLOW FIBER,
                          OR SPIRAL-WOUND CONFIGURATION
      ;.:(.-.•:.  .f^/.-'-f  "
       • •o» % -O *  •  V • dL 'P. • ' . •
                           « 9
                          •p :
> O *P * O  » « , t. ft? P. 4 *! °
 •'  )• •'••••' f'.'•*'j.*-(.
     O SALTS OR SOLIDS


     • WATER MOLECULES
                               CONCENTRATE
                                (SALTS)
               FIGURE 12-62
                           i
       SIMPLIFIED REVERSE OSMOSIS SCHEMATIC
                           i

                XII-100      !

-------
                                                KJMtATt   MWESIVt tOUNO
                                                                     SPIRAL M00UU
                                              d-MINS MIMIRANC
                                                         SPIRAL MEMBRANE MODULE
    fWow Support Tubi
      with Mtmbr«n»
                        Product Wmr Pcrmutt Flow
     BwckW. \
»—» Wmr  \
'    Fad Flow/\
               (±
                             ?  I  ** 'if
                             Product Wrtff
                                                          Brin*
                                                          Conc«ntr»»
                                                          Flow
                         TUBULAR REVERSE OSMOSIS MODULE
                 CONCENTRATE
       SNAP RING     OUTLET
                                  ROW
                                                                OPEN ENDS
                                                                OF FIBERS
                                                                           EPOXY
                                                                         TUBE SHEET
trntNGSEAIi.
  POROUS
BACK-UP DISC
      END PLATE
                                                                                          SHAPRHK5
                                                                                             PERMEATE
                              FIBER
                                           SHELL
                                                                  •0- RING SEAL
                                                      POROUS FEED            END PLATE
                                                    DISTRIBUTOR TUBE
                               HOLLOW FIBER MODULE
                                                    FIGURE  12-63

                              REVERSE  OSMOSIS MEMBRANE  CONFIGURATIONS

                                                     XII-101

-------
 The hollow  fiber  and  spiral-wound  modules have a distinct
 advantage over  the  tubular system  in that they are able to load
 a very large membrane surface  area into  a relatively small
 volume.  However, these  two membrane types are much more suscep-
 tible to fouling  than the  tubular  system,  which has a larger
 flow channel.   This characteristic also  makes  the tubular
 membrane much easier  to  clean  and  regenerate  than either spiral-
 wound or hollow fiber modules.  One manufacturer claims that
 their helical tubular module can be physically wiped clean by
 passing a soft  porous polyurethane plug  under  pressure through
 tne module.                              i
                                          |
 Application and Performance              <
                                          !
 The largest industrial wastewater  application  of  reverse  osmosis
 has been in plating to recover nickel and  rinse  water  from
 nickel deposition rinses.  Reverse  osmosis  is  used  to  close  the
 loop between plating  and rinsing operations in the  metal  finish-
 ing industry.   The overflow from the first  rinse  in a  counter-
 current setup is directed  to a reverse osmosis  unit, where it
 is separated into two streams.  The  concentrated  stream contains
 dragged out process chemicals and  is returned  to  the process
 bath to replace the loss of solution due ,to evaporation and
 dragout.   The  dilute stream (the permeate!)  is  routed to the
 last rinse  tank to provide water, for the jrinsing  operation.
 The  rinse  flows  from the last tank  to the first  tank and  the
 cycle  is  complete.                       :
                                          i
 The  closed-loop  system described above may be supplemented by
 the  addition of  a  vacuum evaporator after the RO unit  in order
 to  further  reduce  the  volume of reverse osmosis concentrate.
 The  evaporated  vapor can be condensed andi returned  to  the  last
 rinse  tank or  sent on  for further treatment.  Another" variation
 is to  increase  the rate of evaporation inl the process bath to
 make room for  reverse  osmosis concentrate^.
  ,.^      s^own  that R0 can generally be applied to most acid
metal baths  with a high degree of performance,  providing that
the membrane unit  is  not overtaxed.   The limitations most
critical here  are  the allowable pH range and maximum operating
pressure for each  particular configuration..  Application to
chromic acid and very high pH systems has | not been successful.

Plant 33065, a metal  finishing facility,  has a  reverse osmosis
unit on its  nickel  plating line.   The sampling  results (mg/1)
of the raw input,  permeate,  and concentrate  are shown below.
                                XII-102

-------
Parameter
Input
                                    Permeate
                                Concentrate
TSS                  1.0
Copper i              .617
Nickel :     .         276.
Chromium, Total      .050
Zinc                 .846
Cadmium             <.005
Tin                  -417
Lead                <.01
                                      2.0
                                      .092
                                      81.
                                      .033
                                      .159
                                    <.005
                                      .375
                                   .067
                                   20,700
                                   .051
                                   17.6
                                  .006
                                   .500
                                  .021
One manufacturer claims that several RO units are being used  to
dewater sludges generated by photographic processes.  Reverse
osmosis has also been effective  in removing  zinc from diazo
solutions in laboratory experiments.  Another company has
demonstrated the usefulness of RO in removing cutting oils and
machining coolants  from wastewater streams  in a pilot plant
operation.

Severa] new membrane materials are under development.  A  Japanese
firm has conducted  experiments with a new RO membrane consisting
of a polybenzimidazolone  (PBIL)  polymer.  The manufacturer
claims  that it  can  handle a pH range from 1  to 12,  temperatures
as high as 601I?C and  is resistant to oxidation by  chromic acid.
Test results for acid copper plating have been encouraging.   In
contrast, performance of  a polybenzimidazole (PBI)  membrane  has
been disappointing.  Another membrane  is being considered for
treatment of cyanide  plating baths and  has  shown pH tolerance
in the  1 to 13  range.   It is made up of a  crosslinked poly-
ethyleneimine structure and  is  claimed  to  exhibit  excellent
stability and RO performance.   A polyamide  composite membrane
also shows promise  for  both  acid and alkaline  cyanide  service,
and  a  polyfurfury1  alcohol  hollow  fiber composite  membrane is
effective for  acid  copper solutions.   The  only membranes  readily
available commercially  are  the  three  described earlier,  and
their  overwhelming  use  has  been for  the recovery of various
acid metals plating baths.

Advantages  and  Limitations

The  major advantage of  reverse  osmosis for handling process
effluents  is  its  ability to concentrate dilute solutions for
recovery of  salts and chemicals with low power requirements.
No latent  heat of vaporization or fusion is required for effect-
 ing  separations;  the main energy requirement is for a high
oressure pump.   It requires relatively little floor space for
 comllct? high  capacity units,  and it exhibits good recovery and
 rejection rates for a number of typical process solutions.
Capital and operating costs are relatively  low.   A limitation
of the reverse osmosis process  for treatment of process  effluents
 is its limited temperature range for satisfactory operation.
 For cellulose acetate systems,   the preferred limits are  18.3 to
                                XII-103

-------
 29.4 degrees  C  (65  to  85  degrees  F);  higher  temperatures  will
 increase the  rate of membrane  hydrolysis  and  reduce  system
 life, while lower temperatures will  result in decreased fluxes
 with no damage  to the  membrane.   Another  limitation  is  inability
 to handle certain solutions.   Strong  oxidizing agents, strongly
 acidic or basic solutions, solvents,  and  other organic compounds
 can cause dissolution  of  the membrane.  Poor  rejection of some
 compounds such as borates and  low molecular weight organics  is
 another problem. Fouling  of membranes by  slightly soluble
 components in solution or colloids has caused  failures, and
 fouling of membranes by feed waters with  high  levels of suspended
 solids can be a problem.  A final limitation  is  inability to
 treat or achieve high concentration with  some  solutions.  Some
 concentrated solutions may have initial osmotic  pressures which
 are so high that they either exceed available  operating pressures
 or are uneconomical to treat.

 Operational Factors

 Reliability;   Very good so long as the proper  precautions are
 taken to minimize  the chances of fouling or degrading of the
 membrane.   Sufficient testing of the waste stream prior to
 application of an  RO system will provide.the information needed
 to insure a successful  application.        [
                                           I
 Maintainability;   Membrane life is estimated to fall between 6
 months  and  3 years,  depending on the use cif the system.   Down
 time  for flushing  or cleaning is on  the order of 2 hours as
 often  as  once  each  week;  a substantial portion of maintenance
 time must be spent  on cleaning  any prefilters installed  ahead
 of the  reverse osmosis  unit.               t

 Solid Waste Aspects;  In  a closed  loop sys'tem utilizing  RO
 there  is a  constant  recycle of  concentrate: and a minimal  amount
 of solid waste.  Prefiltration  eliminates  kiany solids before
 they reach  the module and  helps keep  the  buildup to  a minimum.
 These solids require proper disposal.

 Demonstration  Status                       ]
                                           \
 There are presently at  least  one hundred reverse osmosis waste-
water applications in a variety of industries.   In addition  to
 these, there are thirty to forty units being  used to  provide
pure process water for  several  industries.

Despite the many types  and configurations  of membranes, only
the spiral-wound cellulose acetate membrane has had widespread
success in commercial applications.  Reverse osmosis  is used  in
the E&EC industry for the production of ultrapure process  water
for semiconductor manufacturing.           !
                              XII-104

-------
CHEMICAL CHROMIUM REDUCTION

Description of the Process

Reduction is a chemical reaction in which electrons are  trans-
ferred to the chemical being reduced from the chemical initiat-
ing the transfer (the reducing agent).  Sulfur dioxide,  sodium
bisulfite, sodium metabisulfite, and ferrous sulfate  form
strong reducing agents in aqueous solution and are, therefore,
useful in industrial waste treatment facilities  for the  reduction
of hexavalent chromium to the trivalent form.  The reduction
enables the trivalent chromium to be separated from solution  in
conjunction with other metallic salts by alkaline precipitation.
Gaseous sulfur dioxide is a widely used reducing agent and  pro-
vides a good example of the chemical reduction process.  Reduc-
tion using other reagents is chemically similar.  The reactions
involved may be illustrated as follows:
3

3
             3 H2O
3 H2S03
                                 Cr2(S04)3  +  5  H20
The above reaction  is  favored  by  low  pH.   A pH of  2 to 3  is
normal for  situations  requiring complete  reduction.  At pH
levels above  5,  the  reduction  rate  is slow.  Oxidizing agents
such as dissolved oxygen  and ferric iron  interfere with the
reduction process by consuming the  reducing agent.
     I
A  tyoical treatment  consists of two hours retention in an
equalization  tank followed  by  45  minutes  retention in each of
two reaction  tanks  connected in series.   Each reaction tank has
an electronic recorder-controller device  to control process
conditions  with  respect to  pH  and oxidation reduction potential
(ORP).  Gaseous  sulfur dioxide is metered to the reaction tanks
to maintain the  ORP  within  the range of  250 to 300 millivolts.
Each of the reaction tanks  is.equipped with a propeller agitator
designed  to provide  approximately one turnover per minute.
Following reduction of the  hexavalent chromium, the waste is
combined  with other waste streams for final adjustment to an
appropriate alkaline pH to  remove chromium and other metals by
precipitation and  sedimentation.   Figure 12-74 shows a continuous
chromium  reduction  system.

Application and  Performance

Chromium  reduction  is  used  in  the E&EC manufacturing industry
for  treating photolithographic solutions and rinses which con-
tain hexavalent  chromium.  The main application of chemical
reduction to the treatment  of  wastewater is in the reduction of
hexavalent  chromium to trivalent  chromium.  Rinse waters and
cooling  tower blowdown are  two major sources of chromium in
waste  streams.  A study of  an operational waste treatment
                                XII-105

-------
= 2
";x
=12
in a

                                                                 a
                                                                 H
                                                                 a
                                                                UJ
                                                                Ui
                                  XII-106

-------
facility chemically reducing hexavalent chromium has shown that
a 99.7% reduction efficiency is easily achieved.  Final concen-
trations of 0.05 mg/1 are readily attained, and concentrations
down tb 0.01 mg/1 are documented in the literature.
      i                      -    I
Advantages and Limitations

The major advantage of chemical reduction of hexavalent chromium
is that it is a fully proven technology based on years of ex-
perience.  Operation at ambient conditions results  in minimal
energy consumption, and the process, especially when using
sulfur dioxide, is well suited  to automatic control.  Further-
more, the equipment is readily  obtainable from many suppliers,
and operation is straightforward.

One limitation of chemical reduction of hexavalent  chromium  is
that for high concentrations of chromium, the cost  of treatment
chemicals may be correspondingly high.  When this situation
occurs, other treatment techniques are likely to be more
economical.  Chemical interference by oxidizing agents  is
possible in the treatment of mixed wastes, and  the  treatment
itself may introduce pollutants if not properly controlled..
Storagie and handling of sulfur  dioxide is somewhat  hazardous.

Operational, Factors

Reliability;  Maintenance consists of periodic  removal  of
sludge, the frequency of which  is a  function of the input
concentrations of detrimental constituents.

Solid Waste Aspects;  Pretreatment  to eliminate  substances
which will interfere with the process may often  be  necessary.
This process produces trivalent chromium which  can  be  controlled
by  further treatment.  There may, however, be  small amounts  of
sludge  collected due to minor shifts in  the  solubility  of  the
contaminants.  This  sludge  can  be processed  by  the  main sludge
treatment equipment.

Demonstration  Status

The  reduction  of chromium waste by  sulfur  dioxide  or sodium
bisulfite  is a  classic  process  and  is  used  by  numerous  plants
employing  chromium  compounds  in pickling  and non-contact cooling
operations.  Chemical  chromium  reduction is  used in one E&EC
manufacturing  plant.

SKIMMING
                                      ,
Description  of  the  Process

Pollutants with a  specific  gravity less than water will often
float  unassisted  to the surface of the  wastewater.   Skimming is
used to remove these floating  wastes.   Skimming normally takes
place  in a tank designed  to allow the floating debris to rise
                                 XII-107

-------
 and remain on  the  surface,  while  the  liquid  flows  to an outlet
 located below  the  floating  layer.   Skimming  devices  are therefore
 suited to the  removal  of  non-emulsified  oils from  raw waste
 streams.  Common skimming mechanisms  include the rotating drum
 type, which picks  up oil  from  the  surface1of the water as it
 rotates.  A knife  edge scrapes oil  from  t^ie  drum and collects
 it in a trough for disposal or reuse.  The water portion is
 then allowed to flow under  the rotating  drum.   Occasionally, an
 underflow baffle is installed  after the  drum;  this has the ad-
 vantage of retaining any  floating oil which  escapes  the drum
 skimmer.  The belt type skimmer is  pulledtvertically through
 the water, collecting  oil from the  surface which is  again
 scraped off and collected in a tank.  Gravity  separators,  such
 as the API type, utilize  overflow and underflow baffles to skim
 a floating oil layer from the  surface of the wastewater.   An
 overflow-underflow baffle allows a  small amount of wastewater
 (the oil portion) to flow over into a trough for disposition or
 reuse,  while the majority of the water flows underneath the
 baffle.  This is followed by an overflow baffle, which  is  set at
 a height relative to the first  baffle such that only the  oil
 bearing  portion will flow over  the  first baffle during  normal
 plant  operation.   A diffusion  device,  such as  a vertical  slit
 baffle,  aids in creating a uniform  flow th'rough the  system and-
 increasing oil  removal efficiency.        ;

 Application and Performance

 Oil  skimming is used in the E&EC manufacturing  industry to
 remove  free  oil from many different process wastewater  streams.
 Skimming  is  applicable to any waste stream containing pollutants
 which  float  to  the  surface.   It is commonliy used to  remove free
 oil, grease,  and  soaps.  Skimming  can  be u^sed  in conjunction
 with air  flotation  or clarification in ord|er to increase  its
 effectiveness.                             ;

 The removal  efficiency of  a skimmer is partly a function of the
 retention  time  of the  water in the tank.   [Larger,  more buoyant
 particles  require less  retention time  than; smaller  particles.
 Thus, the  efficiency  also  depends  on the  composition of the
 waste stream.   The  retention time  required^ to allow flotation
 and subsequent  skimming varies  from 1-15  mjinutes,  depending on
 the wastewater  characteristics.

 API or other gravity-type  separators tend [to  be more  suitable
 for use where the amount of  surface  oil  flbwing through the
 system is  consistently  significant.  Drum and belt  type skimmers
 are applicable  to waste streams which  evidence  smaller amounts
of floating^oil and where  surges of  floating  oil are  not a
problem. Using  an API separator system in conjunction with a
drum type skimmer would be a very  effectiv^ method  of removing
floating contaminants from nonemulsified  oily waste streams.
Examples of the performance  of  these systems  are shown in the
following tabulation:                      |
                                XII-108

-------
     Plant     Skimmer Type

     06058         API
     0(5058         Belt
     06041         Drum
     11477         Belt
Oil &
Grease
In. (rag/1)

149779.
19.4
232.
61.
Oil &
Grease
Out (mg/1)

17.9
 8.3
63.7
14.
Advantages and Limitations

Skimming as a pretreatment is effective  in removing naturally
floating waste material and  improves the performance of  subsequent
downstream treatments.

Many pollutants, particularly dispersed  or emulsified  oil, will
not float "naturally" but require additional  treatments.
Therefore, skimming alone will not remove all the  pollutants
capable of being removed by  more sophisticated  technologies.
      I
Operational Factors
      i
Reliability;  Because of its simplicity, skimming  is a very  re-
liable technique.

Maintainability;  A mechanical skimming  mechanism  requires
periodic lubrication, adjustment, and  replacement  of worn
parts.

Solid Waste Aspects;  The collected  layer of  debris must be
disposed of in an approved manner.   Because  relatively large
quantities of water are present  in  the collected wastes,
incineration  is not always a viable  disposal  method.

Demonstration Status

Skimmi|ng is a common  operation utilized  extensively  in industrial
waste treatment systems and  is used  by 3 plants in the present
data b£se.

COALESCING
Description of  the  Process
      ,i
The  basic  principle of coalescing involves the preferential
wetting  of a  coalescing medium by oil droplets which accumulate
on the1 medium,  and  then rise to the surface of the solution.
The  most important  requirements for coalescing media are wett-
ability  for oil and large surface area.

Coalescing stages may be integrated with a wide variety of
gravity  oil separation devices, and some systems may incorporate
                               XII-109

-------
 several coalescing  stages.   In  general, provision  of preliminary
 oil skimming treatment  is desirable  to avoid  overloading  the
 coalescer.  One commercially marketed system  for oily waste
 treatment  (See Figure 12-65) combines coalescing with gravity
 separation.  In this unit, the  oily  waste  enters the separator,
 where the  large droplets immediately move  t:o  the top surface of
 the separator because of the specific gravity differential.
 The^smaller droplets enter the  corrugated  plate area where
 laminar flow produces coalescing of  the oil droplets.  The oil
 droplets deposit on the surface of the plates and  stream  upward
 through weep holes  in the plates to  the surface, where adjustable
 skimmers remove the oil.  Heavy solids are ideposited in the
 entrance chamber before the  oily wastewater enters the plate
 area.                                       |
                                            I
 Application and Performance                j
                                            i
 Coalescing is not used in the E&EC industry for treatment of
 oily  wastes.                               i

 Advantages and  Limitations                 |

 Coalescing allows removal of oil droplets too finely dispersed
 for conventional gravity separation/skimming  technology.  It
 can also significantly reduce the residence; times  (and therefore
 separator volumes)  required to achieve separation of oil from
 some wastes. Because of their simplicity, coalescing oil
 separators provide  generally high reliability and low capital
 and operating costs.  Coalescing is not generally effective in .
 removing soluble or chemically stabilized emulsified oils.  To
 avoid  plugging,  coalescers  must be protectejd by pretreatment
 from very  high  concentrations of free oil ahd grease and suspended
 solids.   Frequent replacement of prefiltersi may be  necessary
 when raw waste  oil  concentrations are high.j

 Operational Factors                         }

 Reliability;  Coalescing is  inherently highly reliable  because
 there  are  no moving  parts,  and  the  coalescing substrate  is
 inert  in the process and therefore  not subject to  frequent
 regeneration or  replacement  requirements.   Large loads  or
 inadequate  prior treatment,  however,  may  result  in  plugging or
 bypassing  of coalescing  stages.             !

 Maintainability;  Maintenance requirements are generally limited
 to  replacement of the coalescing medium on am infrequent basis.

 Solid Wastes Aspects                       >
                                            i
No  appreciable solid waste is generated by this  process,  but
when coalescing occurs in a gravity separator the normal  solids
accumulation is experienced.                !
                                XII-110

-------
                                 m
                                 H

                                 «
                                 D

                                 O
                                 M
                                     o
                                     E-i
                                     CO
                                     M
                                     O
                                     en
                                      o
XII-111

-------
 Demonstration Status                      i

 Coalescing has been fully demonstrated in|the copper and copper
 alloys industry and in other industries generating oily waste-
 water.  It has not been observed in the EsiEC manufacturing
 industry.                                 j

 CARBON ADSORPTION                         l

 Description of the Process

 Carbon adsorption in industrial wastewater treatment involves
 passing the wastewater through a chamber containing activated
 carbon.  The use  of activated carbon has been proven to be
 applicable for removal of dissolved organics from water and
 wastewater.  In fact,  it is one of the most efficient organic
 removal processes available.   This process is reversible,  thus
 allowing activated carbon to  be regenerated and  reused by the
 application of heat and steam.

 The  term activated carbon applies  to any amorphous form of
 carbon that has been specially  treated to give  high adsorption
 capacities.  Typical raw materials  include coal,  wood,  coconut
 shells,  petroleum base residues and char from sewage sludge
 pyrolysis.  A carefully controlled  process bf dehydration,
 carbonization,  and oxidation  yields a  product which is called
 activated  carbon.  This material has a  high, capacity for adsorp-
 tion,  500-1500  square  meters/gram,  resulting from a large  number
 of internal  pores.  Pore sizes generally rahge from 10-100
 angstroms  in radius.                       i

 Activated  carbon  removes  organic contaminants from water by the
process of  adsorption,  or the attraction  and accumulation  of
one substance on  the surface  of another.   Activated carbon  has
a preference  for  organic  compounds  and,  because  of this  selec-
tivity, is particularly effective  in removing organic  compounds
from aqueous solutions.                    i
                                           i 	
Some important but general rules based  on  considerations relating
to carbon adsorption capacity are:

     Higher surface area will give  a greater  adsorption  capacity.

     Larger pore sizes will give a  greaterjadsorption capacity
     for large molecules.                  i

     Adsorptivity increases as  the  solubility of  the solute
     decreases.  For hydrocarbons,   adsorption increases with
     molecular weight.                     ;

     Adsorption capacity will decrease with! increasing
     temperature.                           I

     For solutes with ionizable groups, maxjimum adsorption
     will be achieved at a pH corresponding to the minimum
     lonization.
                                XII-112

-------
The rate of adsorption is also an important consideration.  For
example; while capacity is increased with the adsorption of
higher molecular weight hydrocarbons, the rate of adsorption is
decreased.  Similarly, while temperature increases will decrease
the capacity, they may increase the rate of removal of solute
from solution.

Carbon adsorption requires pretreatment to remove excess sus-
pended solids, oils, and greases.  Suspended solids in the
influent should be less than 50 ppm to minimize backwash require-
ments? £ downflow carbon bed can handle much higher levels  (up
to 2000 ppm), but frequent backwashing is required.  Backwashing
more than two or three times a day is not desirable; at 50 ppm
suspended solids, one backwash will suffice.  Oil and grease
should be less than about 10 ppm.  A high level of dissolved
inorganic material in the enfluent may cause problems with
thermal! carbon reactivation (i.e., scaling and loss of activity)
unless appropriate preventive steps are taken; such steps might
include pH control, softening, or the use of an acid waste on
the carbon prior to reactivation.

Activated carbon is available in both powdered and granular
form. The equipment necessary for a granular activated carbon
adsorption treatment system consists of the following:  a
preliminary clarification or filtration unit to remove the  bulk
of suspended solids; two or three adsorption columns packed
with activated carbon similar to the one shown in Figure 12-66;
a holding tank located between the adsorbers; and liquid transfer
pumps.  Unless a reactivation service is utilized, a furnace
and associated quench tanks, spent carbon tank, and reactivated
carbon tank are necessary for reactivation.                  •

Powdered carbon is less expensive per unit weight than granular
carbon and may have slightly higher adsorption capacity but  it
does have some drawbacks.  For example, it is more difficult to
regenerate; it is more difficult to handle (settling characteris-
tics may be poor); and larger amounts may be required than  for
granular systems in order to obtain good contact.  One innova-
tive powdered carbon system uses wet oxidation for regeneration
instead of fluidized bed incineration.  This technique has  been
applied mainly to municipal treatment but can be used in
industrial systems.

The necessary equipment for a two stage powdered carbon unit is
as follows:  four flash mixers,  two sedimentation units, two
surge tanks, one polyelectrolyte feed tank, one dual media
filter, one filter for dewatering spent carbon, one carbon  wet-
ting tank, and a furnace for regeneration of spent carbon.
       !
Thermal regeneration, which destroys adsorbates, is economical
if carbon usage .is above roughly 454 kg/day  (1000 Ibs/day).
Reactivation  is carried out in a multiple hearth furnace or a
rotary kiln at temperatures from 870 °C to 988°C.  Required
                                XII-113

-------
WASTE WATER
   INFLUENT
 DISTRIBUTOR
 WASH WATER
   BACKWASH
                                                      BACKWASH
                                                REPLACEMENT CARBON
                                                     SURFACE  WASH
                                                       MANIFOLD
                                           liRBON REMOVAL. PORT
                                                     TREATED WATER
                                                  SUPPORT PI-ATE
                                           i

                        FIGURE 12-66      |

          ACTIVATED CARBON  ADSORPTION IcOLUMN
                                  XII-114

-------
residenpe times are of the order of 30 minutes.  With proper
control, the carbon may be returned to its original activity;
carbon losses will be in the range of 4-9% and must be made up
with fr^sh carbon.  Chemical regeneration may be used if only
one solute is present which can dissolve off the carbon.  This
allows material recovery.  Disposal of the carbon may be required
if use is less than approximately 454 kg/day (1000 Ibs/day)
and/or a hazardous component makes regeneration dangerous.
       I
A new type of carbonaceous adsorbent is made by pyrolizing ion
exchange resins.  These spherical adsorbents appear to have the
best characteristics of adsorbent resins and activated carbon.
They have a greater physical strength, attrition resistance,
and regeneration flexibility than either activated carbon or
polymeric resins.  One type is particularly suited for halo-
genated organics and has greater capacity than selected carbons
for compounds such as 2-chloroethyl ether, bromodichloromethane,
chloroform, and dieldrin.  Another type (based on a different
polymeric resin) is best suited for removing aromatics and
unsaturated hydrocarbons.  A third type has a particularly high
capacity (46 mg/1 or 46.45 kg/cu m (2.9 Ib/cu ft) at 2000 mg/1)
for phenol and other relatively polar organic molecules.  These
adsorbents are commercially available but have not yet been
proven in large scale operation.

Application and Performance

The principle liquid-phase applications of activated carbon
adsorption include sugar decolorization; municipal water purifi-
cation;! purifications of fats, oils, foods, beverages and
Pharmaceuticals; and industrial/municipal wastewater treatment.
Potentially, it is almost universally applicable because trace
organics are found in the wastewater of almost every industrial
plant. I

Carbon adsorption, when applied to well-treated secondary effluent,
is capable of reducing COD to  less than 10 mg/1 and BOD to
under 2 mg/1.  Removal efficiencies may be in the range of 30%
to 90% and vary with flow variations and different bed  load-
ings.  Carbon loadings in tertiary treatment plants fall within
the range of 0.25 to 0.87 kg of COD removed per kg of carbon,
and if ;the columns are operated downflow, over 90% suspended
solids jreduction may be achieved.

Quite frequently, segregated industrial waste streams are
treated with activated carbon.  The contaminants removed
include BOD, TOC, phenol, color, cresol, polyesters, polynitro-
phenol/| toluene, p-nitrophenol, p-chlorobenzene/ chlorophenols,
insecticides, cyanides and other chemicals, mostly organic.
The flows being treated are generally small  in comparison with
tertiary systems  (less than 75,700 liters/day  [20,000 gpd]).
                                 XII-H5

-------
 Thermal reactivation of the carbon does not become common until
 flows are above 227,100 liters/day (60,000 gpd).  Some installa-
 tions reactivate their carbon chemically and; the adsorbate is
 recovered.   Recoverable adsorbates are known1to include phenol,
 acetic acid, p-nitrophenol, p-chlorobenzene,ip-cresol, and
 ethylene diamine. Carbon loadings approach one kg COD removal
 per kg carbon in installations where the adsbrbates are easily
 adsorbed and present in relatively high concentrations.  In
 other cases, where influent concentrations are lower and where
 the adsorbates are not readily adsorbed, much lower loadings
 will result.  For example,  it was determined;that brine wastewaters
 containing  150-750 ppm phenol and 1500-1800 ppm acetic acid
 could be reduced to about 1 ppm phenol and 100-200 ppm acetic
 acid with phenol loadings in the range of 0.09-0.16 kg per kg
 and acetic  acid loadings in the range of 0.0^-0.06 kg per kg.
 Prom  metal  finishing,  loadings for cyanide removal have been
 found to  be on the  order of 0.01 kg for influent concentrations
 around  100  ppm.   Loadings, for removal of hexavalent chromium
 have  been shown  to  be  as high as 0.07 kg/kg carbon at 100 ppm
 and 0.14  kg/kg carbon  at 1000 ppm.

 EPA isotherm tests  have indicated that activated carbon is very
 effective in adsorbing 65 percent of the organic priority
 pollutants  and reasonably effective for another 22 percent.
 Specifically,  for the  organics of particular interest,  activated
 carbon  was  very  effective in removing 2,4-dimethylphenol,
 fluoranthene,  isophorone, naphthalene, all plithalates,  and
 phenanthrene.  It was  reasonably effective on 1,1,1-trichloroethane,
 1,1-dichloroethane,  phenol,  and toluene.   Table. 12-15 summarizes
 the treatability effectiveness for most of the organic priority
 pollutants  by  activated carbon as compiled by, EPA.   Table 12-16
 summarizes  classes  of  organic compound together with examples
 of organics  that are readily adsorbed on carbon.

 Table 12-17  summarizes results from a carbon [adsorption treatment
 system  developed by  a  private concern under an EPA grant.  The
 results of  this  study  show removal of organids to a level
 exceeding 90%.   The  results  also show high removal  of s.ome
 organics  (i.e. benzene,  toluene,  1,1,1-trichioroethane)  and
 little  or no removal of others.              j

Advantages and Limitations                  !

The major benefits of  carbon treatment include applicability to
a wide  variety of organics,  with high removal  efficiency.
 Inorganics such  as cyanide,  chromium,  and  mercury are also
removed effectively.   Variations in  concentration and flow rate
are well tolerated.  The  system is compact,  and  recovery of
adsorbed compounds often  occurs  during thermal regeneration.
                                Xll-116

-------
       !                  TABLE 12-15
       Classes of Organic Compounds Adsorbed on Carbon
Organic
Chemical Class
Aromatic Hydrocarbons

Polynuclear Aromatics


Chlorinated Aromatics
Phenolics
Chlorinated Phenolics
*High Molecular Weight Aliphatic
 and Branch Chain Hydrocarbons

Chlorinated Aliphatic Hydrocarbons
*High Molecular Weight Aliphatic
 Acids land Aromatic Acids
*High Molecular Weight Aliphatic
 Amines; and Aromatic Amines
       ! •  '      ', '     " '
*High Molecular Weight Ketones,
 Estersj,  Ethers & Alcohols

Surfactants
       i
       I
Soluble! Organic Dyes
Examples of Chemical Class

benzene, toluene, xylene

naphthalene, anthracene
biphenyls

chlorobenzene, polychlorinated
biphenyls, aldrin, endrin,
toxaphene, DDT

phenol, cresol, resorcenol
and polyphenyls

trichlorophenol
pentachlorophenol

gasoline, kerbsine
                                 1,1,1-Trichlorbethane,
                                 trichloroethylene,  carbon
                                 tetrachloride, perchloro-
                                 ethylene

                                 tar acids,  benzoic  acid
                                 aniline;  toluene  diamine
                                 hydroquinone,  polytheylene
                                 glycol

                                 alkyl  benzene  sulfbnates

                                 methylene blue,  Indigo
                                 carmine
 *High  Molecular Weight includes compounds in the range of 4 to 20
  carbon:  atoms
                                 XII-117

-------
                                              Table 12-16     |
            TREATABILITY RATING OF PRIORITY POLLUTANTS UTILZING CARBON ADSORPTION
 Priority Pollutants
                                    *Removal Rating
Priority Pollutants
                                                                                          *Removal Ratir
  1.   acenaphthene                       H
  2.   acrolein                           L
  3.   acrylonitrile                      L
  4.   benzene                            M
  5.   benzidine                          H
  6.   carbon tetrachloride               M
      (tetrachloromethane)
  7.   chlorobenzene                      H
  8.   1,2,4-trichlorobenzene             H
  9.   hexachlorobenzene                  H
 10.   1,2-dichloroethane                 M
 11.   1,1,1-trichloroethane              M
 12.   hexachloroethane                   H
 13.   1,1-dichloroethane                 M
 14.   1,1,2-trichloroethane              M
 IS.   1,1,2,2-tetrachloroethane          H
 16.   chlorcethane                       L
 17.   bis(chloromethyl) ether
 18.   bis(2-chloroethyl) ether           M
 19.   2-chloroethyl vinyl ether          L
      (mixed)
 20.   2-chloronaphthalene                H
 21.   2,4t6-trichlorophenol              H
 22.   parachlorometa cresol              H
 23.   chloroform (trichloromethane)       L
 24.   2-chlorophenol  .                   H
 25.   1,2-dichlorobenzene                H
 26.   1,3-dichlorobenzene                H
 27.   1,4-dichlorobenzene                H
 28.   3,3-dichlorobenzidine              H
 29.   1,1-dichloroethylene               L
 30.   1,2-trans-dichloroethylene          L
 31.   2,4-dichlorophenol                 H
 32.   1,2-dichloropropane                M
 33.   1,2-dichloropropylene              H
      (1,3,-dichloropropene)
 34.   2,4-dimethylphenol                 H
 35.   2,4-dinitrotoluene                 H
 36.   2,6-dinitrotoluene                 H
 37.   1,2-diphenylhydrazine              H
 38.   ethylbenzene                       M
 39.   fluoranthene                       H
 40.   4-chlorophenyl phenyl ether         H
 41.   4-bromophenyl  phenyl  ether          H
 42.   bis(2-chloroisopropyl)  ether        M
 43.   bis(2-chloroethoxy)methane          M
 44.   methylene  chloride                 L
      (dichloromethane)
 45.   methyl chloride  (chlororaethane)     L
 46.   methyl bromide (bromomethane)       L
 47.   bromoform  (tribromomethane)         H
 48.   dichlorobromcmethane                M
 49.
 50.
 51.
 52.
 53.
 54.
 55.
 56.
 57.
 58.
 59.
 60.
 61.
 62.
 
-------
CARBON ADSORPTION
TABLE 12-17
(AS REPORTED
Parameter Influent (mg/1)
Phenol
Phenol ios (class
test)*^
4-Nitrophenol
2, 6-Dinitro-o-cresol
1 , 3-Dichlorobenzene
1 , 4-Diciilorobenzene
bis(2-E1:hylhexyl)
ph thai ate
2,4-Dinitrotoluene
2, 6-Dinitrotoluene
Chloroform
Bromoform
Carbon tetrachloride
Dichl orobromome thane
Trichlorofluorome thane
Chi orod ibromome thane
1,1, 1-Tr ichloroe thane
Trichloroethylene
Tetrachloroethylene
Chlorobenzene
Benzene
Toluene
Ethvl benzene
0.440
0.627
0.056
0.011
ND
0.720
0.002
2.000
1.900
0.950
0.910
0.095
0.054
0.920
0.081
0.018
0.060
0.062
1.900
0.160
0.680
0.029
UNDER EPA GRANT)
Effluent (mg/1)
0.018
0.197
0
0
ND
0.470
0.001
0.330
0.450
0.051
0.100
0.006
0
0.013
0
0
0.006
0.007
0.012
0
0.004
0.007

% Removal
96
69
>99
>99
-
35
67
84
76
95
89
94
>99
99
>99
>99
90
88
>99
>99
>99
78
XII-119

-------
 If carbon cannot be thermally desorbed, Jit must be disposed of
 along with any adsorbed pollutants.  Whejn thermal regeneration
 is utilized, capital and operating costs' are relatively high.
 Cost surveys show that thermal regeneration is generally economi-
 cal when carbon usage exceeds about 454 [kg/day (1,000/lb-day) .
 Carbon cannot remove low molecular weight or highly soluble
 organics.  It also has a low tolerance for suspended solids,
 which must be removed to at least 50 ppm in the influent water.

 Operational Factors                     i
                                         i
 Reliability;  This system should be veryj reliable assuming
 upstream protection and proper operation and maintenance proce-
 dures .                                  ]
                                         \
 Maintainability;   This system requires periodic regeneration or
 replacement of spent carbon and is dependent upon raw waste
 load and process  efficiency.            .

 Solid Waste Aspects;  Solid waste from tjiis process is contami-
 nated activated carbon that requires disposal.  If the carbon
 undergoes  regeneration, the solid waste problem is reduced
 because  of much less frequent replacement.
                                         i
 Demonstration Status

'Carbon adsorption systems have been demonstrated  to be practical
 and  economical for the reduction of COD,'BOD and  related para-
 meters in  secondary municipal and industrial wastewaters; for
 the  removal of toxic or refractory organics from  isolated
 industrial waste-waters;  for the removal! and recovery of certain
 organics from wastewaters;  and for the removal, at times with
 recovery,  of selected inorganic chemicals from aqueous wastes.
 Carbon adsorp-tion must be  considered a viable and economic
 process  for organic waste streams containing up to 1-5% of
 refractory or toxic organics; its applicability for removal of
 inorganics  such as metals,  although demonstrated  in a few
 cases, is  probably much more limited.    ;
                                         l
 Although carbon adsorption  has not been observed  in any E&EC
manufacturing facilities,  it could be  useful in removing trace
organics from wastewater.                [

 GRAVITY  SLUDGE THICKENING               j

 Description  of  the Process               I

 In the gravity  thickening process,  dilute sludge  is fed from a
primary  settling  tank or  clarifier to  a thickening tank.   Rakes
stir  the sludge gently to densify the  slikdge and  to push  it to
                               XII-120

-------
a central collection well.  The supernatant is returned to the
primary settling tank.  The thickened sludge that collects on
the bottom of the tank is pumped to dewatering equipment or
hauled away.  Figure 12-67 shows the construction of a gravity
thickener.

Application and Perfrmance
Thickeners are generally used in facilities where the sludge  is
to be further dewatered by a compact mechanical device  such as
a vacuum filter or centrifuge.  Doubling the solids content in
the thickener substantially reduces capital and operating cost
of the subsequent dewatering device and also reduces cost for
hauling.  The process is potentially applicable to almost any
industrial plant.

Organic sludges from sedimentation units of one to two  percent
solids concentration can usually be gravity thickened to six  to
ten percent; chemical sludges can be thickened to four  to six
percent.j

Advantages and Limitations

The principal advantage of a gravity sludge thickening  proces
is thatiit facilitates further  sludge  dewatering.  Other advan-
tages are high reliability and  minimum maintenance requirements.

Limitations of the sludge thickening process are  its sensitivity
to the flow rate through the thickener and  the sludge removal
rate.  These rates must be low  enough  not  to disturb the thickened
sludge.
        I
Operational Factors

Reliability;  Reliability is high assuming  proper design and
operation.  A gravity thickener is designed on the basis of
square feet per pound of solids per day,  in which the required
surface!area is related to the  solids  per  square  meter  per  day
(pounds per square foot per day).

Maintainability;  Twice a year, a thickener must  be  shut down
for lubrication of the drive mechanisms.   Occasionally, water
must be pumped back  through the system in  order  to clear  sludge
pipes.

Solid Waste Aspects;  Thickened sludge from a  gravity  thickening
process will usually require  further dewatering  prior  to disposal,
incineration, or drying.  The  clear effluent may  be  recirculated
in part; ,or it may be subjected to  further treatment prior  to
discharge.
                                   XII-121

-------
SLUDGE  PUMP
                                   OVERFLOW
                                   RECYCLED
                                    THROUGH
                                     PLANT
                   FIGURE 12-67
            MECHANICAL GRAVITY THICKENING
                     XII- 122

-------
Demonstration Status
                                            :
Gravity sludge thickeners have not been observed  in  E&EC manufac-
turing plants, but are used throughout other  industry  segments
to reduce water content to a level where  the  sludge  may be
efficiently handled.  Further dewatering  is usually  practiced
to minimize costs of hauling the sludge to  approved  landfill
areas.

CENTRIFUGATION

Description of the Process

Centrifugation is the application of  centrifugal  force to
separate solids and liquids in a liquid/solid mixture  or  to
effect concentration of the solids.   The  application of centri-
fugal force is effective because of the density differential
normally found between the insoluble  solids and the  liquid  in
which they are contained.  As a waste treatment procedure,
centrifugation is applied to dewatering of  sludges.  One  type
of centrifuge is shown in Figure 12-68.

There are three common types of centrifuges:   the disc, basket,
and conveyor  type.  All three operate by  removing solids  under
the influence of centrifugal force.   The  fundamental difference
between the three types is the method by  which solids  are
collected and discharged.

In the disc centrifuge, the sludge  feed is  distributed between
narrow channels that are present as spaces  between stacked
conical Idiscs.  Suspended particles are collected and  discharged
continuously  through small orifices in the  bowl wall.   The
clarified effluent  is discharged through  an overflow weir.

A second type of centrifuge which  is  useful in dewatering
sludges is the basket centrifuge.   In this  type of centrifuge,
sludge feed is introduced at the bottom of  the basket, and
solids collect at the bowl wall while clarified effluent  over-
flows the lip ring  at the top.  Since the basket  centrifuge
does not: have provision for continuous dischare of collected
cake, operation requires  interruption of  the  feed for  cake
discharge for a minute or two  in a  10 to  30 minute overall
cycle.

The third type of centrifuge commonly used  in sludge dewatering
is the conveyor type.  Sludge  is fed  through  a stationary feed
pipe  into a rotating bowl in which  the solids are settled out
against the bowl wall by  centrifugal  force.  From the  bowl
wall, tliey are moved by a screw  to  the end  of the machine,  at
which point whey are discharged.   The liquid  effluent  is  dis-
charged through ports after passing the length of the  bowl.
                                 XII-123

-------
                                                           LIQUID
                                                           OUTLET
                                                                SLUDGE
                                                                INLET
CYCLOGEAR
                                                            IMPELLER
                          FIGURE 12-68

                        CENTRIFUGA-tlON


                            XII-124

-------
Application and Performance

Virtually all of those industrial waste treatment systems
producing sludge can utilize centrifugation to dewater  it.
Centrifugation is currently being used by a wide range  of
industrial concerns. The performance of sludge dewatering by
centrifugation depends on the feed rate, the rotational velocity
of the drum, and the sludge composition and concentration.
Assuming proper design and operation, the solids content of the
sludge can be increased to 20-35 percent.

Advantages and Limitations

Sludge 'dewatering centrifuges have minimal space requirements
and show a high degree of effluent clarification.   The  operation
is simple, clean, and relatively inexpensive.  The  area required
for a centrifuge system installation is less than that  required
for a filter system or sludge drying bed of equal capacity, and
the initial cost is lower.

Centrifuges have a high power cost that partially offsets  the
low initial cost.  Special consideration must  also  be given to
providing sturdy foundations and soundproofing because  of  the
vibration and noise that  result from centrifuge operation.
Adequate electrical power must also be provided since large
motors are required.. The  major difficulty encountered  in  the
operation of centrifuges  has been  the disposal of the concen-
trate which is relatively high in  suspended, non-settling
solids.
       l
Operational Factors

Reliability;   Its reliability  is high, assuming proper  control
of factors  such as  sludge feed, consistency, and  temperature.
Pre-treatment  such  as grit removal and  coagulant  addition may
be necessary.  Pretreatment  requirements  will  vary  depending  on
the composition of  the  sludge  and  on  the  type  of  centrifuge
employed.

Maintainability;  Maintenance  consists  of  periodic  lubrication,
cleaning, and  inspection.  The  frequency  and  degree of  inspec-
tion  required  varies  depending on  the  type  of  sludge solids
being dewatered and the  maintenance  service conditions.  If  the
sludge  is abrasive,  it  is recommended  that the first inspection
of the  rotating assembly be  made  after  approximately 1,000
hours of  operation.   If  the  sludge is  not abrasive  or corrosive,
then  the  initial  inspection  might  be  delayed.   Centrifuges not
equipped  with  a  continuous  sludge  discharge system require
periodic  shutdowns  for  manual  sludge  cake removal.
                                 xil-125

-------
 Demonstration Status                    j
                                         i
 Sludge beds have been in common use in  both municipal and
 industrial facilities for many years.   However, protection of
 ground water from contamination is not  Always adeqaute.  Sludge
 bed drying is used in one plant in the  present data base.

 VACUUM FILTRATION                       I

 Description of the Process

 In wastewater treatment plants, sludge  dewatering by vacuum
 filtration is an operation that is generally accomplished on
 cylindrical drum filters.  These drums  have a filter medium
 hich may be cloth made of natural or synthetic fibers, coil
 springs,  or a wire-mesh fabric.  The drum is suspended above
 and dips into a vat of sludge. As the dtfum rotates slowly, part
 of its circumference is subject to an internal vacuum that
 draws sludge to the filter medium.  Water is drawn through the
 porous filter cake to a discharge port, jand the dewatered
 sludge,  loosened by compressed air, is  scraped from the filter
 mesh.  Because the dewatering of sludge'on vacuum filters is
 relatively expensive per kilogram of water removed,  the liquid
 sludge is frequently thickened prior to iprocessing.   A vacuum
 filter is shown in Figure 12-69.        j

 Application and Performance             i
                                         i
 Vacuum filters are frequently used both ;in municipal treatment
 plants and in a wide variety of industries for dewatering
 sludge.  They are most commonly used in larger facilities, which
 have a thickener to double the solids  content of clarifier
 sludge before vacuum filtering.  The function of vacuum filtra-
 tion is  to reduce the water content of sludge,  so that the
 proportion of solids increases from aboujt 5 percent  to about 30
 percent.                      .           j
                                         i
 Advantages and  Limitations              j

 Although  the  initial cost and area requirement of the  vacuum
 filtration system are higher than  those iof a centrifuge,  the
 operating  cost  is lower,  and no special provisions for sound
 and  vibration protection  need be made.   [The dewatered  sludge
 from this  process is in  the form of a  mo;ist cake and can  be
 conveniently  handled.                    j

 Operational Factors                      j
                                         !
 Reliability:  Vacuum filter systems have1 proven  reliable  at
many  industrial  and  municipal treatment facilities.  At present,
 the  largest maunicipal installation is  at the  West Southwest
wastewater  treatment  plant  of Chicago,  Illinois,  where  96 large
filters were  installed in  1925,  functioned approximately  25
years, and  then  were  replaced with  larger units.   Original
                                   XII-126

-------
                                                     DIRECTION OF ROTATION
FABRIC OR WIRE
FILTER MEDIA
STRETCHED OVER
REVOLVING DRUM
                                                                 VACUUM
                                                                 SOURCE
                           CYLINDRICAL
                           FRAME
                              LIQUID
                              THROUGH
                              MEDIA BY
                              MEANS OF
                              VACUUM

SOLIDS SCRAPED
OFF FILTER MEDIA
              e*
            .**
SOLIDS COLLECTION
HOPPER
                                                               INLET LIQUID
                                                               TO BE
                                                               FILTERED
                         FILTERED LIQUID
                           FIGURE  12-69

                       VACUUM FILTRATION
                              XII-127

-------
  vacuum  filters  at  Minneapolis-St.  Paul,  Minnesota now have over
  38 years  of  continuous  service,  and  Chicago has  some units with
  similar or greater service  life.         j

  Maintainability;   Maintenance  consists of  the  cleaning or
  replacement  of  the filter media, drainag|e  grids,  drainage
  piping, filter  pans,  and other parts of  the equipment.  Experi-
  ence in a number of vacuum  filter  plants indicates  that mainte-
  nance consumes  approximately 5 to  15 percent of  the  total time.
  If carbonate buildup  or other  problems are unusually severe,
 maintenance  time may  be as  high  as 20 percent.

  If intermittent operation is to  be employed, the  filter equipment
 should  be drained  and washed each  time it  is taken out of
 service and an  allowance for wash  time should  be  made in the
 selection of sludge filtering  schedules.!

 Solid Waste Aspects;  Vacuum filters  generate  a  solid cake.
 All of the metals  extracted from the  plant  wastewater are
 concentrated in the filter  cake as hydroxides, oxides,  sulfides,
 or other salts. These metals are subject, to  leaching  into
 ground water, especially under acid  conditions.
                                          F
 Demonstration Status                     i
                                          i
 Vacuum filtration has been widely used for many years.   It  is a
 fully proven, conventional technology foi: sludge dewatering.

 Vacuum filtration is used in four plants i in  the present  data
 base.

 SLUDGE  DISPOSAL                          j

 There  are  several  methods of disposal of  sludges from  industrial
 wastewater treatment.   The  two  most common techniques are
 land-filling  by the company  on  its  own property and removal by
 licensed contractor to an outside landfill or reclamation
 point.   Other disposal techniques used for industrial waste
 sludges  include  incineration, lagooning,  'evaporative ponds, and
 pyrolysis.  This latter  technique produces a dewatered ash or
 sludge which  requires  ultimate  disposal  by either contractor
 hauling  or on-site  landfilling.          j
                                          i
 IN-PROCESS POLLUTION CONTROL TECHNIQUES   !
       —              ,	___   !

 Introduction                              ;

 In general, the  most cost effective pollution reduction tech-
 niques available to any  industry  are  thosje  which  prevent the
 entry of pollutants into process  wastewatler or  reduce the
 volume of waste  water  requiring treatment.   These "in-process"
 controls can  increase  treatment effectiveness by  presenting the
pollutants to treatment  in smaller, more  Iconcentrated waste
streams  from which  they  can  be  more compljetely  removed, or by
                                XII-128

-------
eliminating pollutants which are not readily removed or which
interfere with treatment of other pollutants.. They also
frequently yield economic benefits both in decreased waste
treatment costs and in decreased consumption or recovery of
process materials.  Many in-process control techniques are
applicable to E&EC manufacturing plants at the present time and
will see increasing use as plants are modernized and outdated
equipment is replaced.
       i                               •
While some in-process pollution control techniques such as
water recycling and good housekeeping are of general applica-
bility/ many are applicable only to specific types of processes.
Subsequent sections address in-process pollution control tech-
niques of general applicability and those applicable to E&EC
processes, rinses and quenches.

Generally Applicable In-Process Techniques

Recycle of process wastewater, reduction of water  use, waste
stream segregation, and general good  housekeeping  practices  are
applicable to the reduction of pollution discharges  from all
subcategories.  All may frequently  be effected with  minimal
capital investment and can achieve  substantial reductions  in
treatment costs and pollutant discharges.

Nearly all semiconductor  and  fluorescent  lamp  plants recycle
some process wastewater streams.  The most  commonly  recycled
streams include deionized water  rinse and phosphor deposition
discharges. Electroplating  rinse water  is also recycled  at some
facilities. In general, some  treatment  is required to  allow
process wastewater reuse  in  this  industry,  but the required
treatment  is generally  less  than  that needed  for discharge.   At
present,  the most common  treatment  practices  prior to  recycle
in E&EC manufacturing  are solids  removal  and  deionized water
reprocessing.

Where  recycle  is  presently  practiced, the percentage of water
reused varies  from approximately 50%  to 100%.   Factors which
limit  the  extent  of  recycling include build-up of dissolved
solids  to  levels  unsuitable for further use.   This limitation
may often be  overcome  by  the application of more advanced
treatment techniques than those presently in common use for
recycle.   Other factors limiting recycling  and treatment
required  for  water reuse  are specific to different process
operations and are discussed further in each of the ensuing
sections.

Examples of  water recycling and reuse characterized by sampling
during this  study are shown in .Table 12-18.  Similar recycle
and reuse systems are reported throughout the E&EC manufacturing
products industry segment.   In general, the examples of recycling
encountered  do not encompass all operations of a particular type
within the plant, but they clearly demonstrate the  feasibility
 of a tvigh degree of wastewater recycle and reuse  for some E&EC
manufacturing subcategories.
                                 XII-129

-------
 PLANT
 ID

 06143


 11114


 15606
28063


30047

35035

36173
42044
                                   TABLE 12-18
                    IN-PROCESS TECHNOLOGIES AT E&EC PLANTS
 PRODUCT


 Semiconductors
RECYCLE STOEAM
SOURCE

Total raw waste
 TV Tubes             Phosphor application


 Carbon & Graphite    Impregnation Quench
19101     Semiconductors
                     Total  raw waste
Carbon & Graphite    Machining Waste


Carbon & Graphite    Machining Waste

Semiconductors       Total raw waste

Carbon & Graphite    Machining Waste
Semiconductors
                               Total raw waste
%RECYGLE

     i

    55
                                                           100
                                                           65
   100,
 NARRATIVE DESCRIPTION
Increasing recycle to
65-75%

R/0 water recycle.
Phospher reclaim

All water recycled except
evaporation, make-up
water added

Just beginning production.
Recycle may be as high
as 80%.

Filter out carbon, add rust
inhibitor and recycle.
  100,   Settle carbon and recycle
  100:    Carbon bearing waste stream
      I    goes to clarifier and is
      j    returned to process.
      :    Sludge is contractor
      i    removed.

   80!    Projected 90% recycle
          by 1981.
                                             XII-130

-------
Recycle is highly effective in reducing pollutant discharges,
often eliminating the discharge completely.  Where a discharge
remains, the volume requiring treatment is greatly reduced,
making |the application of advanced treatment techniques more
economically attractive.

Many production processes in E&EC manufacturing plants operate
intermittently or at widely varying production rates.  The
practice of shutting off water during periods when the process
is inoperative and of adjusting flow rates during periods of
low activity can prevent much unnecessary dilution of wastes
and reduce the volume of water to be treated and discharged.
Water may be shut off and adjusted manually or through auto-
•matically controlled valves. Manual adjustment involves minimal
capital cost but has been found to be somewhat unreliable  in
practice.  Production personnel often fail to turn off manual
valves when production processes are shut down and tend  to
increase water flow rates to habitual levels "to  insure good
operation".  Automatic shutoff valves are used in many
industrial operations to turn off water  flows when production
units are inactive.  Automatic adjustment of flow rates  accord-
ing to production levels requires more  sophisticated  control
systems incorporating temperature or conductivity sensors.
Further reduction in water  use may be made possible  by^changes
in production  technique  and equipment.   For.  example,  the
installation of  effective drag-out control measures  or  more
efficient rinsing equipment may  substantially  reduce requirements
for rinse water.  Since  these changes  are  most often specific
to certain operations,  they are  presented  in the  subcategory
discussions  (Sections VI -  XI).

The potential  for reduction of  water  use at  E&EC  manufacturing
facilities  is  evident  in the raw waste  data  and  water use
descriptions presented  in  Sections VI  - XI of  this  report.
While  it  may be  argued  that variations  in water  flow per unit  of
production  are the  necessary result  of  variations in process
conditions,  on-site observations indicate that they are more
frequently  the result  of imprecise  control of  water use.  This is
confirmed by observations  in the semiconductor subcategory in
which  rinse  water  flows  whether the  product  is being rinsed or not

The  segregation of  wastewater streams  is a key element in
cost-effective pollution control.   For example,  separation of
non-contact cooling water  from process wastewater prevents
dilutibn of the process wastes  and maintains the purity of the
non-contact cooling water for subsequent reuse or discharge.
Similarly,  the segregation of process waste streams differing
 significantly  in their chemical characteristics can reduce
 treatment costs and increase effectiveness.   Waste segregation
 is a fairly common practice in the E&EC industry.
                                  XII-131

-------
  Mixing  process wastewater with non-contact ; cooling water generally
  r2?,,f?anSVerS? effect on treatment costs arid performance.  The
  resultant  waste stream is usually too contaminated for continued
  reuse in non-contact cooling applications 
-------
1.
designed flow to it.  Of particular concern  in  this regard  is
the prevention of discharges of process pollutants to  storm
sewers and area drains which flow without treatment to  lakes,
streams, or rivers. This may be accomplished by spill  prevention,
the use I of dikes around liquid storage and handling areas
(especially pickling acids and lubricating oils), the  use of
frequent cleaning of trash screens, rapid repair of leaks,  and
numerous other techniques.

The actions which constitute "good housekeeping" are  specific
to individual plants depending upon plant layout, process
operations and equipment, materials used and other factors.
Costs are similarly site specific, but the requirement for  good
housekeeping as an  integral part of any effective pollution
control program is  universal.
       i
Rinsing;

There are five primary modes of rinsing that are potentially
applicable to E&EC  manufacturing:

          Single Running Rinse - This  arrangement  requires  a
          large volume of water to effect  a  large  degree of
          contaminant removal.  Although  in  widespread use,
          single running rinse tanks  should  be modified or
          replaced  by a more effective rinsing arrangement  to
          reduce water use. A  countercurrent rinse  or a "dead
          rinse" followed by a single  running  rinse  is more
          effective than a  single  running  rinse.  In some
          cases, the dead rinse can  potentially be regenerated
          electrolytically  and returned  to the process chemical
          tank.

          Countercurrent Rinse -  For a countercurrent rinse
          system,  there  is  only one  fresh water feed for a
          serie  of  tanks, and  it  is  introduced  in the last
          tank  of  the  arrangement.   The overflow from each tank
          becomes  the  feed  for the tank preceeding it. Conse-
          quently,  the  concentration of contaminants decreases
          rapidly  from the  first  to  the last tank. Counter-
          current  rinsing was  observed to be operating success-
          fully on semiconductor  rinses in the  E&EC manufacturing
           industry.

          Series Rinse - In a series rinse system, each tank
           reaches  its  own  equilibrium condition; the  first
           rinse having the  highest concentration, and  the  last
           rinse having the  lowest concentration.  The  major
           advantage of the  series rinse over  the countercurrent
           system is that the tanks of the series can  be individu-
           ally heated or - level controlled since each  has a
           separate feed.  The disadvantage  of  series  rinses over
           the countercurrent rinse is higher  water use.
2.
                              XII-133

-------
       4-    Spray Rinse - Spray rinsing is considered the most
            efficient of the various rinse techniques in contin-
            uous dilution rinsing.  The main concern encountered
            is the efficiency of the spray; !i.e., the volume of
            water contacting the part and re'moving contamination
            compared to the volume of water Discharged.  Spray
            rinsing is well suited for washibg batches of small
            items such as capacitors.       !

       5'    Dead, Still,  or Reclaim Rinses -I This form of rinsing
            is particularly applicable for initial rinsing following
            photoresist stripping or gold etching which typically
            cause succeeding rinses to contain significant concen-
            trations of organics or gold sal^s.   A dead rinse
            allows  the concentration of contaminants such as
            organic  solvents or gold salts,  which can then be
            reclaimed  when  sufficient concentrations of contami-
            nants are  present.
                                            I

 Once a rinse  system  is  selected,  the  rinse!water feed rate must
 be controlled  to minimize  water  use.   For lines where production
 rates and products are  relatively constant!a fixed orifice may
 be used with  good  success  to  control  the  fresh  water  feed.
 This technique  is  inexpensive  and has  beenjreadily adapted to
 automatic process  lines.   Orifices  are  notjsuited  for operations
 with fluctuating production rates or where  materials  have  wide
 variance in dragout  volume.   For  these  situations,  conductivity
 controllers or manually operated  valves should  be  used.
                                            i
 A conductivity controller  utilizes  a conductivity  cell  to
 measure the conductance of the solution which,  for  an  electro-
 lyte,  is dependent upon the ionic concentration.  The  conduc-
 tivity cell is tied to a controller which c>pens or  closes  a
 solenoid  on the make-up line.  As the rinse becomes more contami-
 nated,  its conductance increases  until the ,set  point of the
 controller is reached, causing the  solenoid to  open and allowing
 makeup to enter.                           :

 For rinse flows controlled by orifices or manually operated
 valves, dead  man valves "should be installed to shut-off the
 flow rate or  rinse water when the rinse is 'not  in use.  Manage-
 ment must insure that these valves are not ;jammed open.

 Quenching Operations                        i

 In  general, quench  operations  produce relatively large volume
 effluents which contain  low concentrations of most pollutants.
As  a result treatment effectiveness is somewhat  limited unless
 in-process  control  techniques are employed.!  Recycle and reuse
of  the quench  water and  a  reduction of water use can reduce the
volume of  effluent  requiring  treatment and increase pollutant
concentrations  to more treatable  levels.   In addition, total
pollutant  loads  may be reduced by process  changes which decrease
the amounts of  contaminants present on surfaces  being  quenched.
                                 XII-134

-------
Water quenches are used in carbon and graphite manufacturing
plants'following extrusion and impregnation processes.  The
quench water becomes somewhat contaminated with metals, suspended
solids, and lubricants, but the primary effect of this use is
elevation of the water temperature.  Because only minor chemical
changes are produced in the quench solutions, extensive recycle
and reuse is possible without deleterious effects on production.

After extrusion, impregnation products are quenched in quench
baths. Some quench baths may contain either continuous discharges
with no recycle, or the processes are run with zero discharge.
Treatment provided prior to recycle includes settling and pH
adjustment, although a high percentage recycle of extrusion
effluent is also reported without prior treatment.

It is noteworthy that plants presently reporting  zero discharge
of quench water do not treat for oil removal.  This may be
attributed to  the process materials used which do not release
oily wastes during quenching.

Reduction of wa.ter use in quenches may also significantly
reduce discharge volumes. Since quench processes  typically  are
intermittent operations, elimination of water  flow  during
periods of inactivity  is one major method  of reducing water
use.   Further  reductions may be achieved  by efficient water
use.   !
       i
The moist complete  reduction of pollutant  discharges from  quench
operations results  from  the elimination  of the  quench  altogether.
Technically, this  could  be  achieved  at  carbon  and graphite
plants  simply  by not quenching products.   This  has  been reported
at one  large plant  and at  12 medium  and  small  plants  contacted.
                                  XII-135

-------

-------
                       SECTION XIII
         COST OF WASTEWATER CONTROL AND TREATMENT
INTRODUCTION

This section presents estimates of the cost of implementation of
wastewater treatment and control components for the Electrical &
Electronic Components category.  These cost estimates, together
with the treatment and control option performance presented  in.
Sections VI, VII, VIII, IX, X, and XI provide a basis  for evalua-
tion of the options presented and identification of the Level 1,
Level 2 and Level 3 treatment alternatives.  The system cost esti-
mates based on the methodologies discussed in this section and pre-
sented in the appropriate subcategory sections also provide  the
basis for the determination of the probable economic  impact  of
regulation at different pollutant discharge levels on  the E  & EC
category.  In addition, this section addresses non-water quality
environmental impacts of wastewater treatment and control altern-
atives including air pollution, noise pollution, solid wastes,
and energy requirements.

To arrive at the cost estimates presented  in this and  earlier sub-
category sections, specific wastewater  treatment technologies and
in-process control techniques  from among  those discussed  in  Section
XII were selected and combined in wastewater treatment and control
systems appropriate  for each subcategory.  As described  in more
detail below, investment and annual costs  for each system were
estimated based on wastewater  flow rates  and raw waste character-
istics for each subcategory as presented  in Sections  VI  through  XI.
Cost estimates are also presented for  individual treatment
technologies included in the waste treatment systems.  These
estimates assume that no waste treatment  systems are  presently
in place.

COST ESTIMATION METHODOLOGY

Cost estimation  is accomplished  using  a computer program which
acceots  inputs specifying  the  treatment system  to be  estimated,
chemical characteristics of  the  raw waste streams  treated,  flow
rates  and operating  schedules.   The program accesses  models  f6r
specific treatment  components  which relate component  investment
and operating costs,  materials,  and energy requirements  to
influent flow rates  and  stream characteristics.  Component
models are  exercised sequentially as  the components  are  en-
countered  in the  system to determine  chemical  characteristics
and  flow rates  at  each  point.   Component investment  and  annual
costs  are  also  determined  and  used  in  the computation of,total
system costs.   Mass  balance  calculations are  used  to  determine
the  characteristics  of  combined  streams resulting  from mixing
                                XIII-1

-------
 two or more streams and to determine the jvolume of sludges or
 liquid wastes resulting from treatment operations such as sedi-
 mentation, filtration, flotation, and oil separation.

 Cost estimates are broken down into severlal distinct elements
 in addition to total investment and annual costs:  operation
 and maintenance costs, energy costs, depreciation, and annual
 costs of capital.  The cost estimation program incorporates
 provisions for adjustment of all costs to a common dollar base
 on the basis of economic indices appropriate to capital equipment
 and operating supplies.  Labor and electrical power costs are
 input variables appropriate to the dollar; base year for cost
 estimates.  These cost breakdown and adjustment factors as well
 as other aspects of the cost estimation process are discussed
 in greater detail in the following paragraphs.
                                          i
 Cost Estimation Input Data-

 The waste treatment system descriptions input to the computer
 cost estimation program include both a specification of the
 waste treatment components included and a definition of their
 interconnections.   For some components such as holding tanks,
 retention times or other operating parameters are also specified
 in the input,  while for others,  such as reagent mix tanks and
 clarifiers,  these  parameters are specified within the program
 based on prevailing design practice in industrial waste treatment.
 The waste treatment system descriptions may include multiple
 raw waste stream inputs and multiple treatment trains.   For
 example,  treatment of  wastewater from semiconductor manufacture
 includes  segregation of dilute  and concentrated acid  streams,
 separate  treatment for each stream,  and reuse of  the  dilute acid
 wastewater stream.

 The specific  treatment systems  selected for  cost  estimation for
 each  subcategory were  based  on  an  examination of  raw  waste
 characteristics, consideration  of  manufacturing processes, and
 an  evaluation  of available  treatment technologies  discussed  in
 each  section.  The rationale  for selection  of these systems  is
 presented  in Sections .VI  through XI.      ;

 The input  data set also includes chemical .characteristics  for
 each raw waste stream  specified  as  input  to  the treatment  systems
 for which  costs are  to  be estimated.  These  characteristics  are
derived from the raw waste  sampling  data presented  in each
 section.  The pollutant parameters which a!re  presently  ac-
 cepted as  input by the  cost estimation  prdgram  are  shown  in
Table 13-1.  The values of  these parameters  are used  in de-
 termining materials  consumption, sludge volumes,  treatment
component sizes, and effluent characteristics.  The list of  input
                               XIII-2

-------
                         TABLE 13-1
                   POLLUTANT PARAMETERS
              SYSTEM COST ESTIMATION PROGRAM
Parameter, Units
      ,i
Flow, mgd
pH, pH Units
      I
Turbidity, Jackson Units
Temperature, Degree C
Dissolved Oxygen, mg/1
Residual chlorine, mg/1
Acidity, mg/1   CaCo^
Alkalinity, mg/1 CaCb3
      I
Ammonia, mg/1
      j
Biochemical Oxygen Demand, mg/1
Color/ Chloroplatinate Units
Sulfide, mg/1
Cyanides, mg/1
Kjeldahl Nitrogen, mg/1
      i
Phenols,  mg/1
Conductance, Micromho/cm
Total^Solids, mg/1
Total  Suspended Solids,  mg/1
Settleable  Solids,  mg/1
Aluminum,  mg/1
Barium,  mg/1
 Cadmium,  mg/1
 Calcium,  mg/1
 Chromium,  Total, nig/1
 Copper,  mg/1
 Parameter,  Units
 Oil,  Grease,  mg/1
 Hardness,  mg/1  CaCojJ
 Chemical Oxygen Demand,  mg/1
 Total Phosphates,  mg/1
 Polychlorobiphenyls,'  mg/1
 Potassium, gm/1
 Silica,  rag/1
 Sodium,  mg/1
 Sulfate,  mg/1
 Sul-fite,  mg/1
 Titanium,  mg/1
 Zinc,, mg/1
 Arsenic,  mg/1
 Boron, mg/1
 Iron, Dissolved,  mg/1
' Mercury, mg/1
 Nickel, mg/1
 Nitrate, mg/1
 Selenium, mg/1
 Silver, mg/1
                            i
 Strontium, mg/1
 Beryllium, mg/1
                                XIII-3

-------
                     TABLE  13-1  (cent)
                    POLUTANT PARAMETERS
         SYSTEM  COST ESTIMATION  PROGRAM  (Continued)
Parameter/ Units
Fluoride, mg/1
Iron, Total, rag/1
Lead, mg/1
Magnesium^ rag/1
Molybdenum, mg/1
Total Volatile Solids, mg/1
Parameter, Units
Antimony, mg/1
Bromide, mg/1
Cobalt, mg/1
  |
Thallium, mg/1
  fin
Tin, mg/1
Chromium, Hexavalent, mg/1
                                XIII-4

-------
parameters is expanded periodically as additional pollutants are
found to be significant in waste streams from industries under
study and as additional treatment technology cost and perform-
ance data becomes available. For the E & EC category, individual
subcategories commonly encompass a number of widely varying
waste streams which are present to varying degrees at different
facilities.  The raw waste characteristics shown as input  to
waste treatment represent a mix of these streams including all
significant pollutants generated in the subcategory and will not
in general correspond precisely to process wastewater at any
existing facility. The process by which these raw wastes were
defined is explained in each subcategory section.

The  final input data set  comprises raw waste flow rates  for each
input stream for one or more plants in each subcategory  addressed.
Typical flows encountered at existing facilities were used for
each E & EC subcategory to represent  the treatment costs which
would be incurred  in the  implementation of each control  and
treatment option offered.  In  addition, data corresponding to
the  flow rates  reported by each plant were input  to the  computer
to provide cost estimates  for  use  in  economic  impact  analysis.

System Cost Computation

A simplified  flow  chart  for  the estimation of  wastewater
treatment and  control  costs  from  the  input data described
above  is presented in  Figure  13-1.   In  the computation,  raw
waste  characteristics  and flow rates  for  the  first  case  are
used as  input  to  the model  for the  first  treatment  technology
specified  in  the  system definition.   This  model is  used  to
determine  the  size and cost  of the  component,  materials  and
energy  consumed in its operation,  and the  volume and  character-
istics  of  the  stream(s)  discharged  from it.   These  stream
characteristics are then used  as  input  to  the  next  component(s)
encountered  in the system definition.  This  procedure is
continued  until the complete system costs  and  the volume of the
final  effluent stream(s)  and sludge or  concentrated oil wastes
have been  determined.   In addition to treatment components, the
system may  include mixers in which two  streams are  combined,  and
splitters  in which part of a stream is  directed to another
destination.   These elements are handled by mass balance  cal-
culations  and allow cost estimation for specific treatment of
 segregated  process wastes such as destruction of hexavalent chro-
mium bearing wastes prior to combination with other process wastes
 for further treatment and representation of partial recycle of
wastewater.
                                 XIII-5

-------
                          FIGURE 13-1       j


                   SIMPLIFIED LOGIC DIAGRAM;

                 SYSTEM COST ESTIMATION  PROGRAM
NON-RECYCLE
  SYSTEMS
                  INPUT
                  A)  RAW WASTE DESCRIPTION
                  B)  SYSTEM DESCRIPTION
                  C)  'DECISION" PARAMETERS
                  D)  COST FACTORS
                  PROCESS  CALCULATIONS       !
                  A)   PERFORMANCE  -  POLLUTANT
                      PARAMETER  EFFECTS
                  B)   EQUIPMENT  SIZE
                  C)   PROCESS COST
                               (RECYCLE SYSTEMS)
CONVERGENCE
A)  POLLUTANT PARAMETER
    TOLERANCE CHECK
                                (NOT WITHIN

                                 TOLERANCE  LIMITS)
                               (WITHIN TOLERANCE LIMITS)
                 COST CALCULATIONS          :
                 A)  SUM  INDIVIDUAL PROCESS
                     COSTS                  ;
                 B)  ADD  SUBSIDIARY COSTS
                 C) ' ADJUST TO DESIRED DOLLAR
                     BASE         	;
                 OUTPUT                     ;
                 A)  STREAK DESCRIPTIONS    ;
                     COMPLETE SYSTEM        !
                 B)  INDIVIDUAL PROCESS SIZEi
                     AND COSTS              :
                 C)  OVERALL SYSTEM INVESTMENT
                  '   AND ANNUAL COSTS       !
                              XIII-6

-------
As an example of this computation process, the sequence of
calculations involved in the development of cost estimates
for the simple treatment system shown  in Figure 13-2 may be
described.  Initially,  input specifications for the treatment
system are read to set  up the sequence of computations.  The
subroutine addressing chemical precipitation and sedimentation  in
a clarifier is then accessed.  The sizes of the mixing tank and
clarification basin are calculated based on the raw waste  flow  rate
to provide 45-minute retention in the  mix tank and 4 hour  retention
with 1356 1/m  surface  loading in the'clarifier.  Based on these
sizes, investment and annual costs for labor, supplies and for
the mixing tank and clarifier including mixers, clarifier
rakes and other directly related equipment are determined.
Fixed investment costs  are  then added  to account for sludge
pumps, controls and reagent feed systems.

Based on the input raw  waste concentrations and flow rates,
the reagent additions  (lime, alum, and polyelectrolyte) are
calculated to provide fixed concentrations of alum and poly-
electrolyte and 10% excess  lime over  that required for
stqichiometric reaction with the acidity and metals present
in the waste stream.  Costs are calculated for these materials,
and the suspended solids and flow leaving the mixing tank  and
entering the clarifier  are  increased  to reflect the lime solids
added and precipitates  formed.  These  modified stream character-
istics are then used with performance  algorithms for the clarifier
to determine concentrations of each  pollutant  in the clarifier
effluent stream.  By mass balance, the amount of each pollutant
in the clarifier sludge may be determined.  The volume of  the
sludge stream  is determined by the concentration of TSS which  is
fixed at 4-5%  based on  general operating experience, and concen-
trations of other pollutants  in the  sludge stream  are determined
from  their masses and  the volume of  the  stream.

The subroutine describing vacuum  filtration  is  then  called,
and the mass of suspended solids  in  the  clarifier  sludge stream
is used to determine  the  size  and  investment  cost  of the vacuum
filtration unit.  Operating hours  for the  filter are calculated
from  the flow  rate  and  TSS  concentration,  and  manhours  required
for operation  are determined.  Maintenance  labor requirements  are
added as a fixed 'additional cost.

The sludge flow rate  and  TSS  content are  then  used to determine
costs of materials  and  supplies  for  vacuum filter  operation
including  iron and  alum added  as  filter  aids  and  the electrical
power costs  for operation.  .Finally, the  vacuum filter  performance
algorithms are used  to  determine  the volume  and-characteristics
of the vacuum  filter  sludge and  filtrate,  and  the  costs  of
contract disposal of  the  sludge  are  calculated.  The  recycle  of
                                 XIII-7

-------
Raw Waste
                Lime  Flocculant
                  L_L
Chemical
Addition
 Mixing
Clarifier
                    Filtrate
                                     1
                                                 Effluent
                  Vacuum
                  Filter
                            Sludge Contractor Removed
                       FIGURE 13-2
               SIMPLE; WASTE  TREATMENT ,SYSTEM
                     XIII-8

-------
vacuum filter filtrate to the chemical precipitation-clarification
system is not reflected in the calculations due to the difficulty
of iterative solution of such loops and the general observation
that the contributions of such streams to the total flow and
pollutant levels are in practice negligibly small.  Allowance
for such minor contributions is made in the 20% excess capacity
provided in most components.

The costs determined for all components of the system are
summed and subsidiary costs are added to provide output specifying
total investment and annual costs for the system and annual
costs for capital, depreciation, operation and maintenance, and
energy.  Costs for specific system components and the character-
istics of all streams in the system may also be specified as
output from the program.

Treatment Component Models.

The cost estimation program presently incorporates subroutines
providing cost and performance calculations for the treatment
technologies identified in Table 13-2.  These subroutines have
been developed over a period of years from the best available
information including on-site observations of treatment system
performance, costs, and construction practices at a large number
of industrial facilities,  published data, and information
obtained from suppliers of wastewater treatment equipment.  The
subroutines are modified and new subroutines added as additional
data allow improvements in treating technologies presently
available and as additional treatment technologies are required
for the  industrial wastewater streams under study.  Specific
discussion of each of the  treatment component models used in
costinq  wastewater treatment and control  systems for the
E & EC*category is presented later  in this section where cost
estimation is addressed.

Cost estimation is provided by mathematical relationships in
each subroutine approximating observed  correlations between
component costs and the most significant  operational parameters
such as  water flow rate, retention  times, and pollutant concen-
trations.  In general,  flow rate  is the primary determinant of
investment costs and of most annual costs with  the exception  of
matericils costs.   In some  cases,  however, as discussed for  the
vacuum filter, pollutant concentrations may also significantly
influence costs.

Cost Factors and Adjustments

As previously  indicated, costs  are  adjusted to  a common dollar
base and are generally  influenced  by  a  number of  factors  including:
Cost of  Labor, Cost of  Energy,  Capital  Recovery Costs  and
Debt-Equity  Ratio.  These  cost  factors  and  adjustments are
discussed below.
                                 XIII-9

-------
                                   TABLE 13-2   j
                                                i
                         TREATMENT TECHNOLOGY SUBROUTINES
                Treatment Process Subroutines Presently Available
 Spray/Fog Rinse
 Countercurrent Rinse
 Vacuum Filtration
 Gravity Thickening
 Sludge Drying Beds
 Holding Tanks
 Centrifugation
 Equalization
 Contractor Removal
 Reverse Osmosis
 Chemical Reduction of Chromium
 Chemical Oxidation of Cyanide
 Neutralization
 Clarification (Settling Tank/Tube  Settler)
 API  Oil Skimming
 Emulsion Breaking (Chem/Thermal)
 Membrane Filtration
 Filtration (Diatomaceous Earth)
 Ion  Exchange - In-Plant Regeneration
 Ion  Exchange - Service Regeneration
 Flash  Evaporation
 Climbing Film Evaporation
 Atmospheric Evaporation
 Cyclic Ion Exchange
 Post Aeration
 Sludge Pumping
 Copper Cementation
 Fluoride Removal  (Lime Addition)
Sanitary Sewer Discharge Fee
Ultrafiltration
Submerged Tube Evaporation
Flotation/Separat ion
Wiped Film Evaporation
Trickling Filter
Activated Carbon Adsorption
Nickel Filter
Sulfide Precipitation
Sand Filter
Pressure Filter
Multimedia Granular Filter
Sump
Cooling Tower
Ozonation
Activated Sludge
Coalescing Oil Separator
Non Contact Cooling Basin
Raw Wastewater Pumping
Preliminary Treatment
Preliminary Sedimentation
Aerator - Final Settler
Chlorination
Flotation Thickening
Multiple Hearth Incineration
Aerobic Digestion
Treatment Process Subroutines Currently Being Developed

Peroxide Oxidation
Air Stripping  (Ammonia Removal)
Arsenic Removal                                 ;
Water Recycle or Reuse                          !
                                     XIII-10

-------
Dollar Base - A dollar base of August 1979 was used for all
costs..

Investment Cost Adjustment - Investment costs were adjusted  to
the aforementioned dollar base by use of the Sewage Treatment
Plant Construction Cost Index.  This index is published quarterly
by the EPA Division of Facilities Construction and Operation.
The national average of the Construction Cost Index for
August 1979 was 337.8.

Supply Cost Adjustment - Supply costs such as chemicals were related
to the dollar base by the Producer Price Index,  formerly  called  the
Wholesale Price Index.  This figure was obtained  from  the U.S.
Department of Labor, Bureau of Labor Statistics,  "Monthly Labor  Review"
For August 1979 the "Industrial Commodities" Wholesale Price Index
was 240.3.  Process supply and replacement costs  were  included in
the estimate of the total process operating and  maintenance  cost»

Cost of Labor - To relate the operating and maintenance labor costs,
the hourly wage rate for non-supervisory workers  in sanitary ser-=
vices was used from the U.S. Department of Labor, Bureau  of  Labor
Statistics Monthly publication, "Employment and  Earnings".   For
August 1979, this wage rate was $6.71 per hour.   This wage rate  was
then applied to estimates of operation and maintenance man-hours
within each process to obtain process direct labor charges.  To
account for indirect labor charges, 15 percent of the direct labor
costs was added to the direct labor charge to yield estimated total
labor costs.  Such items as Social Security, employer  contributions
to pension or retirement funds, and employer-paid premiums to vari-
ous forms of insurance programs were considered  indirect  labor costs „

Cost of. Energy - Energy requirements were calculated directly
within 'each process.  Estimated costs were then  determined by
applying an electrical rate of 4.5 cents per kilowatt hour.

Capital Recovery C_os_ts_ - Capital recovery costs  were divided
into straight line five-year depreciation and cost of  capital
at a thirteen percent annual interest rate for a  period of five
years. The five year depreciation period was consistent with the
faster write-off (financial life) allowed for these facilities
even though the equipment life is in the range of 20 to 25
years.
                                XIII-H

-------
The  annual  cost  of  capital  was  calculated  by using the  capital
recovery  factor  approach.   The  capital  recovery factor  is  nor-
mally  used  in  industry  to help  allocate the  initial investment
and  the interest to the total operating cost of the facility.
It is  equal to:
                                N
                           (1+i) -1

where i  is  the  annual  interest  rate  and  N  is  the  number  of
years over  which  the capital  is to be  recovered.   The  annual
capital  recovery  was obtained by  multiplying  the  initial
investment  by the capital  recovery factor.: The annual deprecia-
tion of  the capital investment  was calculated by  dividing the
initial  investment by  the  depreciation period N,  which was
assumed  to  be five years.   The  annual  cost of capital  was then
egaal to the annual capital recovery minus the depreciation.

Debt-Equity Ratio - Limitations on new borrowings assume that debt
may not  exceed  a  set percentage of the shareholders  equity.  This
defines  the breakdown  of the  capital investment between  debt
and equity  charges.  However, due to the lack of  information
about the' financial status of various  plants,  it  was not
feasible to estimate typical  shareholders equity  to  obtain
debt financing  limitations.   For  these reasons, no attempt was
made to  break down the  capital  cost  into debt and equity charges.
Rather,  the annual cost of capital was calculated via  the     <
procedure outlined in  the  Capital Recovery[Costs  section above.

Subsidiary  Costs

The waste treatment and control system costs  presented in
each subcategory  subsection for end-of-pipe| and in-process waste
water control and  treatment systems  include subsidiary costs
associated  with system construction  and ope'ration.  These
subsidiary  costs  include:

          administration and  laboratory facilities

          garage  and shop  facilities

          line segregation
                                           i
          yardwork                         1

     .     land

          engineering
                                           j
          legal,  fiscal, and  administrative

          interest during  construction
                              XIII-12

-------
Administrative and laboratory facility treatment investment
is the cost of constructing space for administration, laboratory,
and service functions for the wastewater treatment system.
For these cost computations, it was assumed that there was
already an existing building and space for administration,
laboratory, and service functions.  Therefore, there was no
investment cost for this item.

For laboratory operations, an analytical fee of $105 (August 1979
dollars) was charged for each wastewater sample, regardless of
whether the laboratory work was done on or off site.  This
analytical fee is typical of the charges experienced by Hamilton
Standard during the past several years of sampling programs.
The frequency of wastewater sampling is a function of waste-
water discharge flow and is presented in Table 13-3.  This
frequency was suggested by the Water Compliance Division of
the USEPA.

For industrial waste treatment facilities being costed, no
garage and shop investment cost was included.  This cost item
was assumed to be part of the normal plant costs and was not
allocated to the wastewater treatment system.

Line segregation investment costs account for plant modifications
to segregate wastes.  The investment costs for line segregation-
included placing a trench in the existing plant floor and installing
the lines in this trench.  The same trench was used for all pipes
and gravity feed to the treatment system was assumed.  The
pipe was assumed to run from the center of the floor to a corner.
A rate of 2.04 liters per hour of wastewater discharge per
square meter of area (0.05 gallons per hour per square foot)
was used to determine floor and trench dimensions  from waste-
water flow rates for use in this cost estimation process.

The yardwork investment cost item includes the cost of general  site
clearing, intercomponent piping, valves, overhead  and underground
electrical wiring, cable, lighting, control structures, manholes,
tunnels, conduits, and general site items outside  the structural
confines of particular individual plant components.  This cost  is
typically 9 to 18 percent of the installed components investment
costs.  For these cost estimates, an average of 14 percent was
utilized.  Annual yardwork operation and maintenance costs are
considered a part of normal plant maintenance and  were not
included in these cost estimates.

No new land purchases were required.  It was assumed that the
land required for the end-of-pipe treatment system was already
available at the plant.

Engineering costs include both basic and special services.  Basic
services include preliminary design reports, detailed design, and
                               XIII-13

-------
                           TABLE 13-3     ',
                 WASTEWATER SAMPLING FREQUENCY
Wastewater Discharge
  (liters per day)
      0 -  37,850
 37,850 - 189,250
189,250 - 378,500
378,500 - 946,250
946,250+
Sampling Frequency
once per month
twice per month
once per week
twice per week
                                XIII-14

-------
certain office and field engineering services during construction
of projects.  Special services include, improvement studies,
resident engineering, soils investigations, land surveys,
operation and maintenance manuals, and other miscellaneous
services.  Engineering cost is a function of process installed
and yardwork investment costs and ranges between 5.7 and
14% depending on the total of these costs.

Legal, fiscal and administrative costs relate to planning and
construction of wastewater treatment facilities and include
such items as preparation of legal documents, preparation of
construction contracts, acquisition of land, etc.  These costs
are a function of process installed, yardwork, engineering, and
land investment costs and range between 1 and 3% of the total
of these costs.

Interest cost during construction is the interest cost accrued
on funds from the time payment is .made to the contractor to the
end of the construction period.  The total of all other pro'ject
investment costs (process installed? yardwork; land; engineering;
and legal, fiscal, and administrative) and the applied interest
affect this cost.  An interest rate of 13 percent was used to
determine the interest cost for these estimates.  In general,
interest cost during construction varies between 3 and 10% of
total system costs depending on the total costs.

COST ESTIMATES FOR INDIVIDUAL TREATMENT TECHNOLOGIES

Introduction

Table 13-4 lists those technologies which are incorporated
in the wastewater treatment and control options offered for the
E & EC category and for which cost estimates have been developed.
These treatment technologies have been selected from among the
larger set of available alternatives discussed in Section XII on
the basis of an evaluation of raw waste characteristics, typical
plant characteristics (e.g. location, production schedules,
product mix, and land availability), and present treatment
practices within the subcategories addressed.  Cost estimates for
each technology addressed in this section include investment costs
and annual costs for depreciation, capital, operation and maintenance,
and energy.

Investment - Investment is the capital expenditure required to
bring the technology into operation.  If the installation is a
package contract, the investment Is the purchase price of the
installed equipment.  Otherwise, it includes the equipment cost,
cost of freight,, insurance and taxes, and installation costs.
                               XIII-15

-------
              TABLE  13-4
            E & EC CATEGORY
   APPLICABLE TREATMENT TECHNOLOGIES
       WASTE TREATMENT TECHNOLOGY
Clarification - Lime Precipitation; Continuous
Treatment
Clarification - Lime Precipitation; Batch
Treatment                          '
Clarification - Sulfide Precipitation; Continuous
Treatment
Clarification - Sulfide Precipitation; Batch
Treatment
Multimedia Filtration
Membrane Filtration
Reverse Osmosis
Vacuum Filtration                  ;
Holding and Settling Tanks
Chromium Reduction                 |
pH Adjustment
Contract Removal
          IN-PROCESS CONTROLS
Water Recycle or Reuse
                       XIII-16

-------
Total Annual Cost - Total annual cost  is the sum of annual  costs
                           operation and maintenance  (less  energy),
for depreciation, capital,
and energy (as a separate function).

     Depreciation - Depreciation is an allowance, based on  tax
     regulations, for the recovery of fixed capital  from an in-
     vestment to be considered as a non-cash annual  expense.  It
     may be regarded as the decline in value of a capital asset
     due to wearout and obsolescence.

     Capital - The annual cost of capital  is 'the cost, to the
     plant, of obtaining capital expressed as an interest rate.
     It is equal to the capital recovery cost (as previously dis-
     cussed on cost factors) less depreciation.

     Operation and Maintenance - Operation and maintenance  cost
     is the annual cost of running the wastewater treatment
     equipment.  It includes labor and materials such as waste
     treatment chemicals.  As presented on the tables, operation
     and maintenance cost does not include energy (power or fuel)
     costs because these costs are shown separately.

     Energy - The annual cost of energy is shown separately,
     although it is commonly included as part of operation  and
     maintenance cost.  Energy cost has been shown separately
     because of  its importance to the nation's economy and  natural
     resources.

Lime Precipitation and Sedimentation

This technology  removes dissolved pollutants by the  formation
of precipitates  by reaction with added lime and subsequent  removal
of the precipitated solids by gravity settling in a  clarifier.
Several distinct operating modes and construction techniques
are costed to provide least cost treatment over a broad range of
flow rates.  Because of their interrelationships and integration
in common equipment in some installations, both the  chemical
addition and solids removal equipment are  addressed  in a single
subroutine.

Investment Cost  - .Investment costs are determined for this
technology for continuous treatment systems using either steel
or concrete tank construction, and  for batch treatment using
steel tanks only.  The least cost system  is selected for each
.application.  Continuous  treatment  systems-include controls,
reagent feed equipment, a mix tank  for reagent feed  addition and
a clarification  basin with associated sludge rakes and pumps.  Batch
treatment  includes only reaction-settling  tanks and  sludge  pumps.

Controls and reagent feed equipment:  Costs for continuous
treatment  systems  include a fixed charge  of $10817 covering an
                                 XIII-17

-------
 immersion  pH  probe  and transmitter,  pH monitor,  controller,  lime
 slurry  pump,  1  hp mixer,  and transfer pump.   In  addition,  an
 agitated storage  tank sufficient to  hold one day's operating
 requirements  of a 30% lime slurry is included.   Costs for  this
 tank are estimated  based  on the holding tank!costs discussed
 later in this section and shown in Figure 13-17.   Lime feed
 to  the  slurry tank  is assumed to be  manual.   Hydrated lime is
 used and no equipment for lime slaking or handling is included '
 in  these cost estimates.   At facilities with high lime
 consumption mechanical lime feed may be used resulting in  higher :
 investment costs, but reduced manpower requirements in comparison "•
 to  manual  addition.                      :                     '

 Mix Tank:  Continuous systems also include ai> agitated tank
 providing  45  minutes  retention for reagent addition and formation
 of  precipitates.  When the clarifier is concrete, the mix  tank is
 also of concrete, below grade and adjacent to the clarification
 basin.  Costs shown in Figure 13-3 include both  the mix tank
 and clarifier as  a single item.   For steel construction,  the
 costs for  the mix tank are based on  holding  tank  costs shown in
 Figure 13-17.

 Clarifier:  The clarifier size is calculated based on a hydrauii-c
 loading of 1356 1/m   and  a retention time of 4 hours with  a  20%   ;
 allowance  for excess  flow capacity.   Costs for clarifiers  shown  in
 Figure 13-3 include a mix tank as noted above, excavation  (if needed),
 installation, and associated equipment including  a mixer and
 clarifier rakes.  For steel construction,  costs are estimated
 for a cylindrical above ground clarifier with sludge collection
 equipment.  The type  of construction used  is selected internally in
 the cost estimation program to provide least ,cost.

 Sludge Pumps:  A cost of  $3817 is included in the total capital
 cost estimates  regardless of whether steel or concrete construction
 is  used.  This  cost covers the expense for two centrifugal
 sludge pumps.

To calculate  the  total  capital cost  for continuous  lime precipita-
 tion and sedimentation in a clarifier,  the costs  estimated for the
controls and  reagent  feed system,  mix tank,  clarifier and  sludge
pump must be  summed.                    '     |

For batch treatment,  dual above-ground cylindrical  carbon  steel
 tanks sized for 8 hour  retention and 20% excess capacity are
used.  If the batch flow  rate  exceeds 19697  liters  per hour,  (5204
gph), then costs for  fabrication are included.  To  complete  the
capital  cost  estimation for batch treatment, ;a fixed $3,817  cost is
 included for  sludge pumps as  discussed above.:
                                  XIII-13

-------
V
  in
    o
    »-4

'Snv -
                         \
                                  I I
     o
     ^-i

auaaass.uii
                                                              0)
                                                              o
                                              8


                                              z

                                          A   I
                                          *-<   en
                                              LLJ
                                          ™2   ^^
                                          ex,   ty


                                              Ci,
                                                            O
                                                            a
                                                            o
                   XIII-19

-------
Operation & Maintenance Costs - The operation and maintenance costs
for the Chemical Precipitation/Clarification routine include:

     1)   Cost of chemicals added  (lime, alum, and polyelectrolyte)
     2)   Labor (operation and maintenance);
     3)   Energy                           \

Each of these contributing.factors is discussed below.
                                           [
     CHEMICAL COST

     Lime, alum and polyelectrolyte are added for metals and
     solids removal.  The amount of lime required is based on
     equivalent amounts of various pollutant parameters present
     in the stream entering the clarifier unit.  The methods
     used in determining the lime requirements are shown in
     Table 13-5.  Alum and polyelectrolyte additions are
     calculated to provide a fixed concentration of 200 mg/1
     of alum and 1 mg/1 of polyelectrolyte.

     LABOR                                 |

     Figure 13-4 presents the manhour requirements for the
     continuous clarifier system.  For the batch system,
     maintenance labor is assumed negligible and operation
     labor is calculated from:

     {man-hours for operation) = 390 + (.975) x (Ibs.  lime added
                                                 per day)

     ENERGY

     The energy costs are calculated from the clarifier and
     sludge pump horsepower requirements.

     Continuous Mode                       '

     The clarifier horsepower requirement is assumed constant over
     the hours of- operation of the treatment system at a level of
     0.0000265 horsepower per 3.8 Iph (1 gph) of flow  influent to
     the clarifier.   The sludge pumps are assumed operational for
     5  minutes of  each operational hour at a level of  0.00212
     horsepower per 3.8 Iph (1 gph) of sludge stream flow.

     Batch Mode                            :

     The clarifier horsepower requirement  is assumed to occur for
     7.5 minutes per operation hour at the following levels:
                               XIII-20

-------
                                              VO
                                                o
                                              If)
                                                o
                                                   u
                                                  JS
                                                   
-------
                          TABLE  13-5

             Lime  Additions  for  Lime  Precipitation
Stream  Parameter
Lime Addition
kg/kg (Ibs/lb)
Aluminum
Antimony
Arsenic
Cadmium
Chromium
Cobalt
Copper
Iron (Dissolved)
Lead
Magnesium
Manganese
Mercury
Nickel
Selenium
Silver
Zinc
     0.81
     4.53
     1.75
     2.84
     2.73
     2.35
       38
       28
     2.19
     0.205
     3.50
     1.48
1,
1,
     0.42
     1,
     3,
 ,45
 ,23
0.39
1.25
                              XIII-22:

-------
       '.   influent flow < 3944 Iph; 0.0048 hp/lph
          influent flow >, 3944 Iph; 0.0096 hp/lph

     The power required for the sludge pumps in the batch system is
     the same as that required for the sludge pumps in the contin-
     uous system.

     Given the above requirements, operation and maintenance
     costs are calculated based on the following:

               $6.71 per man-hour + 15% indirect labor charge
               $44.61/metric ton of lime
               $48.55 metric ton of alum
               $1.95/kg of polyelectrolyte
               $0.045/kilowatt-hour of required electricity

Sulfide Precipitation - Sedimentation

This technology removes dissolved pollutants by the formation of
precipitates by reaction with sodium sulfide, sodium bisulfide,
or ferrous sulfide and lime, and subsequent removal of the
precipitate by settling.  As discussed for lime precipitation
and sedimentation, the addition of chemicals, formation of
precipitates, and removal of the precipitated solids from the
wastewater stream are addressed together  in cost estimation
because of their  interrelationships and commonality of equipment
under some circumstances.

Investment Cost - Investment cost  estimation procedures for  sulfide
precipitation and sedimentation are identical to those for-lime
precipitation and sedimentation.   Continuous treatment systems
using concrete and steel construction  and batch  treatment systems
are cosited to provide a  least  cost system for each  flow range and
set of  raw waste  characteristics.  Cost factors  are also  the
same as  for  lime  precipitation and sedimentation.

Operation and Maintenance  Costs -  Costs estimated  for  the operation
and maintenance  of a sulfide  precipitation-and  sedimentation system
are also  identical to  those  for lime  precipitation  and sedimentation
except  for the  cost  of  treatment  chemicals.  Lime  is  added  prior  to
sulfide  precipitation  to achieve  an alkaline pH  of  approximately
8.5-9 and will  lead  to  the precipitation  of  some pollutants as
hydroxides or calcium  salts.   Lime consumption  based  on  both neu-
tralization  and  formation  of  precipitates is calculated  to  provide
a  10% excess  over stoichiometric  requirements.   Sulfide  costs  are
based on the  addition  of ferrous  sulfate  and sodium bisulfide  (NaH&)
to form a 10% excess of ferrous sulfide over stoichiometric require-
ments for precipitation.  Reagent  additions  are  calculated  as  shown
in Table 13-6.   Addition of  alum  and  polyelectrolyte  is  identical
to that shown for lime  precipitation  and  sedimentation as are  labor
and energy  rates.
                                XIII-23

-------
                          TABLE 13-6

         Reagent  Additions for  Sulfide  Precipitation
Stream Parameter
Cadmium
Calcium
Chromium  (Hexavalent)
Chromium  (Trivalent)
Cobalt
Copper
Lead
Mercury
Nickel
Silver
Tin
Zinc

Sodium Bisulfide Requirement
Ferrous Sulfate Requirement
Lime Requirement

     Ferrous Sulfide Requirement
         ' kg/kg (Ibs/lb)

               0.86
               2.41
               1.86
               2.28
               1.64
               1.52
         !      0.47
         j      0.24
         !      1.65
               0.45
         1      0.81
         ;      1.48

0.65* Ferrous Fulfide Requirement
1.5* Ferrous -Sulfide Requirement
0.49* FeSo4(lbs) + 3.96* NaHS(lbs)
  + 2.19* Ibs of Dissolved  Iron
                        XIII-24

-------
The following rates are used in determining operating and
maintenance costs for this technology.

          $6.71 per man-hour •*• 15% indirect labor charge
          $48,55/metric ton of alum
          $1.95/lb of polyelectrolyte
          $44.61/metric ton- of lime
          $0.15/kg of sodium bisulfide
          $155.40/metric  ton of  ferrous  sulfate
          $0.045/kilowatt-hour of electricity

Multi-Media Filtration

This  technology provides  removal of  suspended  solids  by  filtration
through  a bed of  particles of  several distinct size ranges.   As  a
polishing treatment  after chemical precipitation  and  sedimentation
processes, multi-media  filtration provides  improved removal  of
precipitates  and  thereby  improved removal of  the  original
dissolved pollutants.

Investment Cost - The size of  the multi-media  filtration unit is
based on 20%  excess  flow  capacity and  a  hydraulic loading  of
0.58  mvlph.  The investment  cost, presented  in Figure  13-5  as
a  function of flow  rate,  includes a  backwash  mechanism,  pumps,
controls, media and  installation.  Minimum  cos|s  are  obtained
using a  minimum  filter  surface area  of  18.29  m .
       !                                           '         ,\
Operation and Maintenance Cost - The costs  shown  in  Figure 13-6
for ooeration and maintenance  include  contributions  of  materials,
electricity  and  labor.   These  curves result from correlations
made  with data  obtained by a major  manufacturer.   Energy costs
are estimated to  be 3%  of total O&M.

Membrane Filtration

Membrane filtration includes addition of sodium hydroxide  to form
metal, precipitates and  removal of the resultant solids  on  a
membrane filter.   As a polishing treatment, it minimizes solubility
of metal and provides highly effective removal of precipitated
hydroxides  and  sulfides.

 Investment  Cost - Based on manufacturer's data, a factor of $52.6
per 1 gph flow rate to the membrane filter is used to estimate
capital  cost.  Capital cost includes installation.

 Operation and Maintenance Cost -  The operation and maintenance
 costs for membrane filtration include:

      1)    Labor
      2}    Sodium Hydroxide Added
      3)    Energy
                                XIII-25

-------
                                                    O
          Sk

                \


                             I I
                                                    a
3-5
                                                              VJ
                                                              o
to
U
Plow Rate
03
FIGURE


MULTIMEDIA FILTER
00
C
'Sny - s-renoa)  1203
                  XII1-26

-------
XIII-27

-------
 Each of these contributing factors are discussed below.

      LABOR                              ;

      2 man-hours per day of operation are included.

      SODIUM HYDROXIDE ADDITION

      Sodium hydroxide is added to precipitate metals as
      hydroxides or to insure a pH favorable to sulfide pre-
      cipitation.  The amount of sodium hydroxide required, is
      based on equivalent amounts of various pollutant parameters
      present in the stream entering the membrane filter.  The
      •method used to determine the sodium hydroxide demand is
      shown below:                        :

                POLLUTANT                ;

                Chromium, Total
                Copper
                Acidity
                Iron,  DIS
                Zinc
                Cadmium
                Cobalt
                Manganese
                Aluminum

      (Sodium Hydroxide Per Pollutant,  kg/day)
       (LPH)  x Pollutant  Concentration  (mg/1)

      ENERGY                             ;
                                         i
      The horsepower required  is  as  follows:

      two 1/2  horsepower  mixers operating 34 minutes  per
         operational  hour

      two 1  horsepower pumps operating  37 minutes per
         operational  hour

      one 20 horsepower pump operating  45 minutes per
         operational  hour                .
                                         i
Given the above  requirements, operation and maintenance  costs
are calculated based  on  the following:   :

          $6.71  per man-hour +.15% indirect labor charge
          $0.059 per  kg  of sodium hydroxide required
          $0.045 per  kilowatt-hour of  energy required
                 0.000508
                 0.000279
                 0.000175
                 0.00.0474
                 0.000268
                 0.000158
                 0.000301
                 0.000322
                 0.000076
                   AN
aOH x Flow Rate
XIli-28

-------
Reverse; Osmosis

This technology achieves the concentration of dissolved organic
and inorganic pollutants in wastewater by forcing the water
through serai-permeable membranes which will not pass the pollu-
tants.  The water which permeates the membranes is relatively
free of: contaminants and suitable for. reuse in most manufacturing
process operations.  A number of different membrane types and
constructions are available which are optimized for different
wastewater characteristics  (especially pH and temperature).

Investment Cost - Investment cost data from several manufacturers
of RO equipment is summarized in the  cost curve shown in Figure
13-7,  The costs shown include a prefilter, chemical feed system,
scale inhibitor tank, high  pressure pump, and permeators.
Installation is also included.  Two different systems, one using
cellulose acetate membranes and suitable for concentrated bath
recovery and one using polyamide membranes which are tolerant
of a wider pH and temperature range are addressed.  The polyamide
resin systems are applicable to treatment of electric lamp manu-
facturing wastewaters.

Operation and.Maintenance Cost -  Contributions to operation and
maintenance costs includes

     LABOR

     The annual labor requirement is  shown in Figure 13-8.
     Labor cost is calculated using a $6.71 per hour labor rate
     plus a 15% indirect labor charge.

     MATERIALS

     The annual cost of materials used in operation and maintenance
     of.the reverse osmosis unit is shown in Figure 13-9.  The
     major component of the materials cost is the cost of
     replacement of permeator modules which are assumed to have
     a 1.5 year service life based on manufacturers' data.

     POWER
       !     ,    '        "         -
     The horsepower requirements for  reverse osmosis unit is shown
     in Figure 13-10.  This requirement is assumed to be constant
     over the operating hours of the  system being estimated.  The
     energy cost is determined using  a charge of $0.045 per kilo-
     watt-hour.
                                XIII-29

-------


















.



1









	







1









































•y










































x^
v\
V








































y
s\
\\





y




























in
J O
1 i-i
(61 '§ny - sa








SL

SJ •
V

\
\
\







































\



\
V
>


































\





V
A
V\
































\
V e>*

\ * ®
JL ^
~\ '-^
\
\
^
\ v

V
\
\
\
\
^
\
S








•V
o
BTT°Q) 3.503 msuassAui
XIII-30













i
i
i










..
if





i
C 3 •
~ ^ •

T
































\
\








\
>


















































t
.




\
\







\






V

\
\
\
\
\


°
                   fr-
                   cn
                   o
                   u
            u!    w


            *"*    i-t


            S    S2
    O
o
o
                   U4

                   CO
                   u
                   en

-------
                                                   UJ

                                                   s
                                               00-
                                                I

                                               tfl
                                         JJ    UJ
                                                    to
                                                    h-t
                                                    CO


                                                    I
                                                    o
                                                    c:
                                                    tu


                                                    1
XIII-31

-------
                       \
                          X

                                          -
                                           0)
                                          4J
                                           (rt
                                          *
                                          o
                                        _
                                                                        06
                                                                             I
a

<


<
HH
oi
                                                    jg

                                                    CO
                                                    CO
                                                    o
                                                    ai
                                                    to
'gnV  - SXBtTOd)
ATddng PUB  -[BT.X81.BN



XIII-32

-------
                                                   a
                                                   a
                                                   OS
                                                   OS


                                                   OS
                                                   a.

                                                   CO
                                                    i
                                                    10
                                                    o

                                                    cu
                                                    to
                                                    e£
                                                    EU

                                                    Ul
XIII-33

-------
 Vacuum Filtration

 Vacuum filtration is widely used to reduce the water content
 of high solids streams.  In the E & EC industry, this technology
 is applied to dewatering sludge from clarifiers, membrane filters
 and other waste treatment units.

 Investment Cost - The vacuum filter is sized based on a typical
 loading of 1476 kilograms of influent solids per hour per square
 meter  of filter area (3 Ibs/ft -hr).  The curves of cost versus
 flow rate at TSS concentrations of 3% and 5% are shown in Figure
 13-11.  The investment cost obtained from this curve includes in-
 stallation costs.

 Operation and Maintenance Cost.            |

     LABOR                                 i

     The vacuum filtration subroutine may be run for off-site
     sludge disposal or for on-site sludge incineration.  For
     on-site sludge  incineration,  conveyor transport is assumed,
     and operating man-hours are reduced from those for off-site
     disposal.   The  required operating hours per year varies with
     both flow rate  and the total  suspended solids concentration
     in" the influent stream.  Figure 13-12 shows the variance
     of operating hours with flow  rate and TSS concentration.
     Maintenance labor  for either  sludge disposal mode is fixed
     at 24  manhours  per year.

     MATERIALS                              '

     The cost of materials and  supplies  needed for operation and
     maintenance includes belts, oil,  grease,  seals,  and chemicals
     required to raise  the total suspended solids to the vacuum
     filter.   The amount of chemicals  required (iron and alum)  is
     based  on raising the TSS  concentration to the filter by 1  mg/1
     Costs  of materials required as a  function of flow rate  and
     unaltered  TSS concentrations  are  presented  in Figure 13-13.

     ENERGY

     Electrical  costs needed to supply power  for  pumps and controls
     are  presented in Figure 13-14.  As  the required  horsepower
     of  the pumps  is dependent  on  the  influent*TSS level,  the costs
     are  presented as a function of flow rate  and TSS  level.

Holding  Tanks

Tanks serving a  variety of purposes  in wastewater treatment  and
control  systems  are  fundamentally  similar  in design,  construc-
tion, and cost.   They may include  equalization tanks,  solution
holding  tanks;  slurry or  sludge holding  tanks, mixing  tanks,
                             XIII-34

-------
                                        S
                                        i
                                         tu
                                         o
XIII-35

-------
^
   V
in
 o

                       %
                            £
                                   *AN>
                                                 %l\\
                                                     3
                                                                  £
                                                                                w




                                                                                UJ




                                                                                Of
                                                                        cu   f>   ""
                                                                        4J   i-4   z

                                                                        IB       O





                                                                        ill
                                                                        Ct,   Cu   >-t
                                                                                u.
                                                          §
                                                       o

                                                       o
     (A.
-------
                                                                o •*.
                                                             ro  £ S

                                                             7- :< ±
                                                             ft  E =
                                                                ^
'SnV - si-snoa) 1S03 Xiddng


              XIII-37

-------
               L_V_
               \ \
               _v
                          \
                          v\l
\O
 O
sA
                                                                 6
                                                                 S

                                                                 i
                                                                 ta
                                                               7
                                                           oj
                                                           cs


                                                           o
                                                         o
                                                         o
                                                v.
                                                _*

                                                c
                                                a,
                                                m
                                                •-

                      - serened)
                            XIII-38

-------
and settling tanks from which sludge is intermittently removed
either manually or by sludge pumps.  Tanks  for all of these pur-
poses are addressed in a single cost estimation subroutine with
additional costs for auxiliary equipment such as  sludge pumps
added ais appropriate.

Investment Costs - Investment costs are estimated  for either steel
or concrete tanks.  Tank construction may be specified as  input
data, or determined on a least cost basis.  Retention time is spe-
cified as input data and, together with stream flow  rate,  determines
tank size.  Investment costs for steel and  concrete  tanks  sized for
0.5 days retention and 20% excess capacity  are shown as functions
of stream flow rate in Figure 13-15. These  costs  include mixers,
pumps atnd installation.

Operation and Maintenance Costs -  For all  holding tanks except
sludge holding tanks, operation and maintenance costs are  minimal
in comparison to other system O&M costs.  Therefore  only energy
costs for pump and mixer operation are determined.   These  energy
costs sire presented in Figure 13-16..                           ,

For sludge holding tanks, additional operation and maintenance
labor requirements are reflected in increased O&M costs.   The
required man-hours used in cost estimation  are presented in .
Figure 13-17.  Labor costs are determined using a labor rate
of $6.71 per manhour plus 15% indirect labor" charge.

Where tanks are used for settling as in lime precipitation and
clarification batch treatment, additional operation  and maintenance
costs are calculated as discussed specifically for each technology.

Chromium Reduction

This technology provides chemical reduction of hexavalent  chromium
under acid conditions to allow subsequent removal of the trivalent
form by precipitation as the hydroxide.  Treatment may be  provided
in either continuous or batch mode, and cost estimates are developed
for both.  Operating mode for system cost estimates  is selected on
a least cost basis.

Capital Cost - Cost estimates include all required equipment for
performing this treatment technology including reagent dosage,
reaction tanks, mixers and controls.  Different reagents are pro-
vided for batch and continuous treatment resulting in different
system design considerations as discussed below.

For both continuous and batch treatment, sulfuric acid is  added
for pH control.  A 90 day supply is stored  in a 25 percent
aqueous form in an above-ground, covered concrete tank, 0.305m
(1 ft) thick.                     .                       •  -     .
                                XIII-39

-------
tn
 o




























•








\































MM**


s


































\





























M




!L 	
\
\
\

























Hi ••









\


































V






















••HI












S
>



















If-ir-i-*














\
\

















f-rf~--~---*















\
\

































I— _ 	
\
\
Y
\
\
\











T-






















s


































S

i































S

































L



































!
V
'


































\
s


































\
\

































s
j
•3

a
in
u
E-
ul • §
O '2
"~* e
4)





c—
O
^ ' i
^ r-l P
^ 1 10
x4 >
ax ^*
5 a ' "
<9 , 3 C/5
cs 5s ^
i-t. Z
2 & S
a
•-• a
fiti • 3S
^ >-H
^0 . '3
2 s






a '
a







o
        .-*•>

         0
o
o
                  (5L '
1SOQ aU30IlS3AUI
                                      XIII-40

-------
in
 o
                                                             \
                                                                                        >•
                                                                                        2
                                                                                   .vo   g
 •U •   Bl  z

.a   I  3
     N«4  rn
' »   B.  §
 o       »
 -t       a

         3
                                                                             o
                                                                             o
                                             XIII-41

-------
tn













































































































































































































































































































































































































































M^M
































*
































l\
-\—
rv
V \
V
\































v
k
































s
\































S

k
N
a




























\



\
^
V




























V



\
"o\
t>




























v
\


\


•

'

























\°
\

V-
\.,
\
\
}


























i
\






















— — —










V_
\ „.. 	
\
v
V
\
















                                                                              01
                                                                      a
                                                                      .u
                                                                      Q
-  i
aj  5
                                                                    a
                                                                    o
   a


   I
                                                                  o
                                                                  o
                                   XIII-42

-------
For continuous chromium reduction  the single  chromium  reduction
tank is sized as an above-ground cylindrical  concrete  tank with
a 0.305 ra  (1 ft) wall thickness, a 45 minute  retention  time, and
an excess  capacity factor of 1.2.   Sulfur dioxide  is added to  con-
vert the influent hexavalent chromium to the  trivalent  form.

The control system for continuous  chromium  reduction consists  of;

     1     immersion pH probe and transmitter
     1 !•   immersion ORP probe and  transmitter
     1     pH and ORP monitor       .
     2     slow process controllers
     1     sulfonator and associated pressure  regulator
     1     sulfuric acid pump
     1     transfer pump for sulfur dioxide  ejector
     2     maintenance kits for electrodes,  and miscellaneous
           electrical equipment and piping

For batch  chromium reduction, the  dual chromium reduction tanks are
sized as above-ground cylindrical  concrete  tanks,  0.305 m (1 ft)
thick, with a 4 hour retention time, and an excess capacity factor
of 1.2.  Sodium bisulfite is added to reduce  the hexavalent chromium,

A completely manual system is provided for  batch operation.  Sub-
sidiary equipment includes:                     •   •

     1 ,'    sodium bisulfite mixing  and feed  tank
     1     metal stand and agitator collector
     1     sodium bisulfite mixer with disconnects
     1 !    sulfuric acid pump                                     .
     1     sulfuric acid mixer with disconnects
     2     immersion pH probes
     1     pH monitor, and miscellaneous piping

Capital costs for batch and continuous treatment systems are pre-
sented in  Figure 13-18.

Operation  and Maintenance - Costs  for operating and maintaining
chromium reduction systems include labor, chemical addition, and
energy requirements.  These factors are determined as  follows:

     LABOR

The labor  requirements are plotted in Figure  13-19.  Maintenance
of the batch system is. assumed negligible and is not shown.

     CHEMICAL ADDITION

For the continuous system, sulfur  dioxide is  added according to
the following:
                             XIII-43

-------
o
 o
                                                   '  ' *
                                                                             VO
                                                                              o
                                                                                        o
                                                                                        u
                                                                                        In
                                                                                \    oo  s
                                                                                d    "V  2

                                                                                «    S  1
                                                                                     U  u.
                                                                                36    U.
                                                                                O
                                                                             en
                                                                              o
                                                                                        UJ
                                                                                        •at
                                                                              o
                                                                              o
(6i '
                                         1203 i



                                       XIII-44

-------
                                                   OS
                                                   O
                                                   aa
                                               UJ  (—*
                                               . as  5-
                                               rs  u

                                               u  3
                                               i—i  O
                                                   =£
                                                   u
XIII-45

-------
                                                    +6
      (Ibs S02/day)  -  (15 ..43)  (flow  to  unit-MGD)  (Cr    mg/1)

In the batch mode,  sodium  bisulfite .is added  in  place  of  sulfur
dioxide according  to  the following:
      (Ibs NaHS03/day)  =  (20.06)  (flow  to  unit-MGD)  (Cr

      ENERGY
                                                       +6
mg/l)
A two horsepower motor  is  required  for  chemical  mixing.   The  mixers
are assumed to operate  continuously over  the operational  time of  the
treatment system.

Given the above requirements,  operation and maintenance costs are
calculated based on  the  following:

          $6.71 per  man-hour  +• 15%  indirect labor  charge
          $380/metric ton  of  sulfur dioxide
     .    520/metric ton of sodium  bisulfite
     .    $0 .045/kilowatt-hour of"'required electricity

pH Adjustment                               •

The adjustment of pH values is a  necessary precursor  to a number
of treatment operations  and is frequently required to return  waste
streams to a pH value suitable for  discharge; following metals
precipitation.  This is  typically accomplished by  metering an
alkaline or acid reagent into  a mix tank  under automatic  feed-
back control.

Figure 13-20 presents capital  costs for pH adjustment as  a function
of the flow rate going  into the units.  The cost calculations are
based on,steel or concrete tanks  with a 15 minute  retention time
and an excess capacity of  20%. Tank construction  is  selected on
a least cost basis.  Costs include  a pH probe and  control system,
reagent mix tanks, a mixer in  the pH adjustment  tank, and system
installation.                               [

Operation and Maintenance  Costs

     LABOR

     The required labor  as a  function of  flow rate is
     presented in Figure 13-21.   The cost of labor may be
     calculated using a  labor  rate  of $6.71 per  hour  plus a
     15% indirect labor  charge.
                              XIII-46

-------
                                                                   3
                                                                o
                                                                (M  ,«.
                                                                as
                                                                   Ctt
«3nv _  si-BT
                 XIII-47

-------


1
        \
       \
             ^

X
                           A
                                                        4)
                                           i-*r   Ul
                                           CM    C£
                                            I    1-4

                                           s    s-
                                                             til
                                                        %    O

                                                        n    >->
                                                     S
                                                                  M

                                            \
                                       \
                XIII-48

-------
     MATERIALS

     Sodium hydroxide or sulfuric acid are added according to
     th« stream pH and acidity or alkalinity.  The amount of
     lime or acid required may be calculated by the procedure
     shown in Table 13^7.  The cost of lime or acid added may
     be determined using the rates of $0.06 per kg of sodium
     hydroxide and $75.68 per metric ton of sulfuric acid.

     ENERGY

     Power, required for a mixer, is based on a representative
     installation with one turnover per minute.  The daily horse-
     power requirement is 3 hp per 37,850 Iph flow rate.  The
     energy cost may be calculated using the rates of .8 kilo-
     watts per horsepower and $.045 per kilowatt-hour.

Contract Removal

Sludge, waste oils, and in some cases concentrated waste solutions
frequently result from wastewater treatment processes.  These may
be disposed of on-site by incineration, landfill or reclamation,
but are most often removed on a contract basis  for off-site disposal.
System cost estimates presented in this report  are based on contract
removal of sludges and waste oils.  In addition, where only small
volumes of concentrated wastewater are produced, contract removal
for off-site treatment may represent the most cost-effective ap-
proach to water pollution abatement.  Estimates of solution con-
tract haul costs are also provided by this subroutine and may be
selected in place of on-site treatment on a least-cost basis.

Investment Costs - Investment for contract removal is zero.

Operating Costs - Annual  costs are estimated  for contract removal
of total waste streams or sludge and oil streams as specified in the
input data.  Sludge and oil removal costs are  further divided into
wet and dry haulage depending upon whether or  not  upstream sludge
dewatering  is provided.   The use of wet haulage or of sludge de-
watering and dry haulage  is based on least cost as determined by
annualized  system.costs over a ten year period. Wet haulage
costs are always used  in  batch treatment systems and when the
volume of the sludge  stream is less than 378.5  liters per day (100
gallons per day).  Both wet sludge haulage and  total waste haulage
differ  in cost depending  on the  chemical composition of  the water
removed.  Wastes are  classified  as cyanide bearing, hexavalent  chro-
mium bearing, or oily  and are assigned different haulage costs  as
shown below.
                                   XII1-49

-------
Chemical
Lime
Sulfuric Acid
            TABLE 13-7
NEUTRALIZATION CHEMICALS REQUIRED

            Condition
          .  pH less than 6.5
            pH greater than 8.5
A
""Hj
.00014
.00016
(Chemical demand, kg/day) « Ao x Flow Rate (LPH) x Acidity
                          (Alkalinity, mgCaC03/l)
                               XIII-50

-------
     Waste Composition

     ^0.05 mg/1 CN~
     -0,1 mg/1 Cr °
     Oil & grease -TSS
     All others
Haulage Cost

$0.16/liter
50.18/liter
$0.08/liter
$0.06/liter
Dry sludge haul costs are estimated at $0.08/liter and 40% dry
solids in the sludge.

In Process Treatment and Control Components    •

Some inLprocess controls have been identified  for application to E &
EC wastewaters, and these require in-process treatment or changes in
manufacturing facilities and capital equipment for which additional
costs must be estimated.  For recycle and reuse of specific process
streams, the required equipment and resultant  costs  are discussed
in this subsection.

Water Recycle and Reuse

The costing of a water recycle or reuse  system is basically a
water pumping application.  Wastewaters  are  pumped from holding
areas following process use or treatment to  process  operation work
areas for recycle and reuse.  The cost of a  recycle  or reuse water
feed system is based on the amount of water  to be recycled, the
total pumping head  required, the  length  and  diameter of pipe, and
any needed excavation or  installation.

Based on information collected from visited  plants in the  E&EC
Industry, wastawater flow rates vary  from 75.7 liters per minute
(20 GPM) to 18,924  liters per minute  (5000 GPM).  Pump size, motor
drives, and pipe diameter are all related to flow rate.

Recycle and reuse system  components have been  sized  for seven recycle
flow rates.  The equipment  specifications for  these  recycle .and
reuse systems are presented in Table  13-8.   Total pumping  head,
required horsepower, and  pipe diameter vary  based on alternative
system  flow rates.   Manufacturer  supplied pump curves were  used;
and pipe sizes were selected to reduce internal  pipe resistance  to
a minimal value. ' The  required length is assumed to be 30.5 meters
(100 feet) in all cases.  Total pumping  head is  assumed to  increase
with flow rate and  varies from 7.6 meters  (25  feet)  to  18.3 meters
(60  feet).
                               XIII-51

-------
                          TABLE  13-8      !
    Alternative Recycle  and  Reuse  System Specifications
Recycle/Reuse
Alternative
     1
     2
     3
     4
     5
     6
     7
Flow Rate  Horsepower
(LPM)   (GPM)
75.7    20     1/2
379
1135
1892
3785
9462
18924
100
300
500
1000
2500
5000
2
5
10
 I
20
5|0
125
Diameter
 (CM)  (IN)
 10.2   4
 15.2   6
 25.4   10
 25.4   10
 30.5   12
 61.     2'4
                                                       61.
        24
                               XIII-52

-------
Motor Drives:
Pump, pipe, and motor drive costs are based on plant construction
cost data for 1979.  Manufacturers equipment specifications and
cost data sheets were also used.  For all alternatives, tax and
freight costs are not included.  All cost items are discussed
below.

Investment Costs - Investment costs were determined for each al-
ternative recycle and reuse system and  include pumps, motor drives,
valves, supports and foundations, pump  and motor  controls, and
water transport piping.  The recycle investment costs are presented
in Table 13-9 for each alternative system.  Component costs were
based on the following:

Pumps: :        Estimated costs are for  centrifugal type pumps.
               Using the required recycle flow rates, pump
               curves were utilized to  estimate horsepower
               requirements and motor speed for the assumed
       i        total pumping head for each recycle system.
               Two pumps are costed, each having  the required
               flow capacity.

               Estimated costs are for  motor drives to supply
               the required pumping horsepower.   Squirrel cage
               induction motors with magnetic starters  (230/460.
               Volt, A.C,  3 phase, 60 cycle) were costed.  One
               motor is required  for each pump.

Piping::        Estimated costs are for  ductile cost iron pipe
               (Type III)  with mechanical joints. Pipe diameters
               vary with flow rate as presented in Table 12-8.
               The length  of pipe required in each case is assumed
               to be 30.5  meters  (100 feet).

Pipe and Motor Controls:   Controls are  required with each pump  and
               motor to adjust recycle  flow.  The costs of these
               controls are dependent on  recycle  or reuse system
               layout and  internal requirements.  For this analy-
               sis, the control costs are estimated to be equal  to
               the investment costs of  the pump and motor system
               to be controlled.

Support and  Foundations:   Estimated costs  for pipe supports  and
               pump foundations are plant specific.  Foundation
               requirements are based on  pump and motor weights
               while support  system are related to pipe size.   For
               this analysis, support and  foundation costs are  esti-
               mated to be equal  to 50  percent of pump and motor
               investment  costs.
                                 XIII-53

-------
                            TABLE  13-9
                RECYCLE AND REUSE  INVESTMENT COST
RECYCLE/REUSE
 ALTERNATIVE
      1

      2

      3

      4

      5

      6

      7
 FLOW
 RATE
 (1pm)
  75.7

  379

 1135

"1892

 3785

 9462

18924
INVESTMENT
   COST
 (Dollars)
  8516

 16113

 28318

 28968

 38377

 71957

 87317
                               XIII-54;

-------
Valves:        Estimated costs are for  iron body globe and swing
               check valves.  Two glove valves and one check
       i        valve are required per pump.  Valve size has been
               equated with pipe diameters for each  alternative
               system costed.

Operation and Maintenance Costs

Operation and maintenance costs  include labor and energy.  The
annual cost of materials, supplies and  labor  for operation
and maintenance  is  estimated  to  be 4% of  total investment cost
in this analysis.   The energy costs  are estimated utilizing pump
horsepcwer requirements  for each alternative-system.  The cost per
Kw houi
is assumed to be $0.045.
                                  XIII-55

-------
 ENERGY AND NON-WATER QUALITY ASPECTS

 Energy and non-water quality aspects of the wastewater treatment
 technologies described in Section XII are summarized in Tables
 13-10 and 13-11.  Energy requirements are listed, the impact on
 environmental air and noise pollution is noted, and solid waste
 processes are divided into two groups, wastewater treatment
 processes on Table 13-10 and sludge and solids handling processes
 on Table 13-11.

 Energy Aspects

 Energy aspects of the waistewater treatment processes are important
 because of the impact of energy use on our natural resources and
 on the economy.  Electrical power and fuel requirements (coal,
 oil, or gas)  are listed in units of kilowatt hours per ton of dry
 •olids for sludge and solids handling.  Specific energy uses are
 noted in the  "Remarks" column.

 Non-water Quality Aspects

 It is important to consider the impact of each treatment process
 on air,  noise,  and radiation pollution of the  environment to
 preclude the  development  of a more adverse environment impact.

 In general, none of the liquid  handling processes  causes air pollu-
 tion..  With sulfide precipitation,  however,  the potential exists
 for evolution of hydrogen sulfide,  a toxic gas. Proper  control of
 pH in treatment eliminates  this problem.   Incineration of sludges
 or solids can cause significant air pollution  which  must be  con-
 trolled  by suitable gag houses, scrubbers  or stack gas precipita-
 tors as  well  as proper  incinerator operation and maintenance.   None
 of the  wastewater treatment  processes  causes objectionable noise
 and none  of the treatment processes has  any  potential  for radiation
 hazards.

 The solid waste impact  of each  wastewater  treatment  process  is
 indicated in  two columns  on  Table  13-11.   The  first  column shows
 whether effluent solids are  to  be  expected and,  if so, the solids
 content  in qualitative  terras.   The  second  column lists typical
 values for percent  solids of  sludge  or  residue.

 The  processes for  treating the  wastewaters from this category
produce considerable volumes  of sludges.   In order to ensure long-
 term protection  of  the environment  from harmful sludge constituents,
 special consideration of disposal sites should  be  made by RCRA  and
municipal authorities where applicable.
                               XIII-56

-------
            Jia 3   -<

            |<3   2
          35
                   So   o
                   _   —i  «
       £  "93)



       £  oa
                       "8  "8

                       a  2
                       JJ  .U
                    u  w u

                   «=« ? =


                   S 3 —"I 5 S
                   o o a oo
  I
9 i
-.. §
  I
  S
          III
I
3 '

:!• -Ill





     I81
                              JJ -t-l w
                               £  S
                               3  S

                               S  §
                        *
    •— ^ •• o
    x S w a




     : !  :
           |3|f  I
                                 a.  -
                  n es
                  • •
                       S  i
                       r-t  0
                      a S
SSKXIM
                1  I
                111
                6353
            I I



            8 1
                                     |

                                     It
                     2  ?|
                     2  y g


                     1  S5

-------
        *«
      S li
                      I   1
                      22
                      I   ?
                      I   I
        a 3 o
T a
          = tl

        < s —
iS
        »a   -3- Si-
        ll   S5£ fl
                        S  g
                                 -
' I i* «•• 3

:-t; f!
     I  il
        M




        II
                      r~ a  i tfi
                      — >a  o o»
                  = .«  I i"  —   —
                  « M  2 3  *   «^

                  3-  s-  =   "5
                                   Xlll-sa

-------
IBEATMEKT SYSTEM COST ESTIMATES

Estimates of the total cost of wastewater treatment and control  sys-
tems for E & EC process wastewater  incorporating the treatment and
control components discussed above  were presented  for  the appropriate
product subcategories in Sections VI through XI.   Cost estimates
corresponding to median (typical) flow rates in the subcategory
addressed were presented for each system in order  to provide an
indication of the costs to be incurred in implementing each level
of treatment.  Since plants in some subcategories  report zero waste-
water discharge and will therefore  incur zero  treatment and control
costs, low flow rates used in cost  estimation  represent low flow
values at plants reporting wastewater and are  not  true minima for,the
subcategory.  Raw waste characteristics were determined based on
sampling data as discussed in Sections VI through  XI.

The system costs presented in Sections VI through  XI include com-
ponent costs as discussed above  and subsidiary costs including
engineering, line segregation, administration, and interest expense
during construction.  In each case, it is assumed  that none of the
specified treatment components and  control measures are in place so
that the presented costs represent  total costs for the systems.

Cost estimates presented in the.tables in Section  VI through X.I  are1
representative of costs typically incurred in  implementing treatment
and control equivalent to the specific levels. They will not, in
general, correspond precisely to cost experience at any individual
plant.  Specific plant conditions such as age, location, plant layout,
or present production and treatment practices  may  yield costs which
are either higher or lower than  the presented  costs.  Because the
costs shown are total system costs  and do not  assume any treatment
in place, it is probable that most  plants will require smaller
expenditures to reach the specified levels of  control  from their
present status.

The actual costs of installing and  operting a  Level 1  system at  a
particular plant may be substantially lower than the tabulated
values.  Reductions in investment and operating costs  are possible
in several areas.  Design and installation costs may be reduced  by
using plant workers.  Equipment  costs may be reduced by using or
modifying existing equipment instead of purchasing all new equipment.
Application of an excess capacity factor, which increases the size
of most equipment foundation costs, could be reduced if an existing
concrete pad or floor can be utilized.  Equipment  size requirements
may be reduced by the ease of treatment  (for example,  shorter
retention time) of particular waste streams.   Substantial reduc-
tion in both investment and operating cost may be  achieved if a
plant requires a water use rate  below that assumed in  costing.
                              XIII-59

-------
                         SECTION XIV

                       ACKNOWLE DGEMENTS
The Environmental  Protection  Agency was  aided lin  the  preparation
of this Development  Document  by  Hamilton Standard,  Division  of
United Technologies  Corporation.   Hamilton  Standard's effort was
managed by Mr.  Daniel  Lizdas, Mr.  Robert Blaser and Mr.  Jeffrey
Wehner.  Mr. Richard Wilde  and Mr. Lawrence McNamara  directed
the engineering activities  and field operations were  under the
direction of Mr. Richard Kearns.   Significant contributions  were
made by Peter Formica, James  Brown, James Steele, Remy Halm,  James
Pietrzak, Robert Patulak and  Raymond Levesque.

Ms. Lauren Zeise and Mr. Richard Kinch Of the EPA's Effluent
Guidelines Division  served  as Project Officers during the prep-
aration of this  document.   Mr. G.  E. Stigall, Chief,  Inorganics
Chemicals and Services Branch, Effluent  Guidelines  Division,
offered guidance and 'suggestions during  this report.

Acknowledgement  and  appreciation is also given to Mrs. Lynne  McDonnell,
Ms. Lori Kucharzyk,  Ms. Kathy Maceyka, and  Ms. Denise McKiernan of
Hamilton Standard, who worked so diligently to prepare,  edit, publish
and distribute  the manuscript.

Finally, appreciation  is also extended to the plants  that partici-
pated in and contributed data for  the formulation of  this document.
                              XIV-1

-------
                        SECTION XV
                        REFERENCES
 1.  Amick, Charles L., Fluorescent Lighting Manual, McGraw-
      Hill,  3rd ed.f  (1961).

 2.  Baumann,  E.R., Diatomite Filtration of Potable Water, Ameri-
      can Water Works Association Inc.

 3.  Beau, R.L. et al., Transformers  for  the Electric Power In-
      dustry, McGraw-Hill  (1959).

 4.  Bogle, W.S., Device  Development,  The Western Electric Engi-
      neer,  (July, 1973).

 5.  Burock,  R. et al, Manufacturing  Beam Lead,  Insulated Gate,
      Field  Effect Transistor Integrated Circuits,  Bell Labora-
      tories Record,  (Jan.  1975).

 6.  Cockrell, W.D.,  Industrial Electronics Handbook, McGraw-
      Hill  (1958).

 7.  Culver,  R.H., Diatomaceous Earth Filtration, Chemical
      Engineering, Vol.  17,  No. 12  (Dec. 1975).

 8.  Elenbaas, W., Fluorescent Lamps  and  Lighting,  (1959).

 9.  EPA,  Final Rule  Polychlorinated  Biphenyls Manufacturing,
      Processing, Distribution in Commerce,  and Use Prohibition,
      Federal Register,  (May 31, 1979),  Part IV.

10.   EPA,  Support Document/Voluntary  Environmental  Impact  State-
      ment and  PCS  Ban  Economic Impact Analysis,  EPA Office  of
      Toxic Substances  Report, (April, 1979).

11.   Forsythe, William E.,  Fluorescent and  Other Gaseous Dis-
       charge Lamps,  (1948).

12.   Funer, R.E., Letter to Robert Schaeffer, EPA Effluent Guide-
       lines Div.,  E.I.  duPont de Nemours and Company.  Subject:
       priority  pollutant removal from wastewater by the PACT
       process at the Chambers Works.

13.   Gerstenberg, D.  and J. Klerer,  Anodic Tantalum Oxide Capa-
       citors From Reactively Sputtered Tantalum, 1967 Proceed-
       Tngs, Electronic Components Conference, Sponsored by IEEE,
       EIA.
                                XV-1

-------
 14.   Gray,  H.J.,  Dictionary of Physics, Longmans, Green and Co.,
        London  (1958).

 15.   Henney, K. and C. Walsh, Eds., Electronic Components Handbook,
        McGraw-Hill  (1975).                :

 16.   Hewitt, Harry, Lamps and Lighting, American Elsevier Publish-
        ing  Co., (1966).

 17.   Hiyama, S. et al, 3500 uFV Wound-Foil Type Aluminum Solid
        Electrolytic Capacitors, 1968 Proceedings, Electronic
        Components Symposium, Sponsored by IEEE, EIA.

 18.   IBM, S/C Manufacturing Overview, IBM,'East Fishkill, N.Y.

 19.   IEEE Standards Committee, IEEE, Standard Dictionary of Elec-
        trical and Electronic Terms, J. Wiley and Sons, (Oct, 1971).

 20.   Illuminating Engineering Society, IES,Lighting Handbook, 3rd
        ed., (1962).                       '

 21.   Jowett, C.E., Electronic Engineering Processes, Business
        Books, Ltd., (1972).

 22.   Kirk and Othmer, Encyclopedia of Chemical Technology, Vol. 17,
        McGraw-Hill, (1968).

 23.   Knowlton, A.E., Standard Handbook for Electrical Engineers,
        McGraw-Hill, (1957).

 24.  McGraw-Hill,  Dictionary of Scientific and Technical Terms,
        2nd Ed., McGraw-Hill (1978).       :

 25.  McGraw-Hill,  Encyclopedia of Science and Technology, McGraw-
       Hill (1960).

26.  Mclndoe, R.W., Diatomite Filter Aids, Pollution Engineering
       Magazine.

27.  Motorola, Small Signal Wafer Processing, Motorola, Phoenix,
       AZ.

28.  Oldham, W.G., The Fabrication of Microelectronic Circuits,
       Scientific  American (Sept., 1977).  :
                                  XV-2

-------
29.  Phillips, A.B., Transistor Engineering, McGraw-Hill, (1962),

30.  Puchstein, A.F. et al., Alternating Current Machines, J.  Wiley,
       (1954).

31.  Transformer Consultants, Why Annual Transformer Oil Testing,
       The Consultor, Transformer Consultants, P.O. Box 3575,
       Akron, Ohio,   44310 (1978).

32.  U.S. Department of Commerce, Bureau of the Census, 1977 Census
       of Manufactures, Preliminary Statistics, Bureau of the Cen-
       sus Reports No. MC 77-1-36 for SIC 3600-3699 Issued 1979.

33.  U.S. Government, Public Law 94-469 Toxic Substances Control
       Act,  (Oct. 11, 1976).

34.  Webster's Seventh New Collegiate Dictionary, G & C Merriam
       Co.,  (1963).
                                   XV-3

-------

-------
                         SECTION XVI

                          GLOSSARY



Absorb -  To take up matter or radiation.
       ,t
    -  Federal Water Pollution Control Act Amended 1972.
Activate - To treat the cathode or target of an electron  tube
     irforder to create or increase  its emission.

Adjustable Capacitor - The capacitance of adjustable  capacitors
     may be set at any one of several discrete values.

Adsorption - The adhesion of an extremely thin layer  of molecules
- (of~gas, liquid) to the surface of solids (granular  activated
     carbon for instance) or liquids with which they  ace  in  con-
     tact.

Aging •- Allowing a permanent magnet, capacitor, meter or  other
     device to remain in storage  for a period of  time sometimes
     with a voltage applied until  the characteristics of  the de-
     vice become essentially constant.

Algicide - Chemicals used  in the  control  of  phytoplankton (algae)
     inTbodies of water.

Aluminum Foil - Aluminum  in the  form of  a sheet  of thickness not
     exceeding 0.005 inch.

anneal  - To treat a metal, alloy,  or glass  with  heat  and  then
- cool  to  remove  internal stresses  and to make the material
     less  brittle.

Anode - The  collector of  electrons in  an electron tube.   Also
     known  as plate; positive  electrode.

Anodizing  - An electrochemical  process  of controlled  aluminum
- oxidation producing  a hard,  transparent oxide up to several
     mils  in  thickness.

Assembly  or  Mechanical  Attachment - The fitting together of pre-
" - viously  manufactured parts or components into a complete
     machine,  unit  of  a machine or structure.

Autotrans former  - A power transformer having one continuous
- winding  that is  tapped?  part of the winding serves  as  the
     primary and all  of it serves as the secondary,  or vice versa.
                                   XVI-1

-------
 Ballast - A circuit element that serves to limit an electric
      current or to provide a starting voltage, as in certain
      types of lamps, such as in fluorescent ceiling fixtures.

 Binder - A material used to promote cohesion between particles
      of carbon or graphite to produce solid carbon and graphite
      rods or pieces.

 Biochemical Oxygen Demand (BOD) - (1) The quantity of oxygen used
      in the biochemical oxidation of organic matter in a specified
      time, at a specified temperature, and under specified con-
      ditions.  (2) Standard test used in assessing wastewater
      strength .

 Biodegradable - The part of organic matter which can be oxidized
      by bioprocesses,  e.g., biodegradable detergents,  food wastes,
      animal manure, etc.

 Biological Wastewater  Treatment - Forms of wastewater treatment
      in which bacteria or biochemical action is intensified to
      stabilize,  oxidize, and nitrify the unstable organic matter
      present.   Intermittent sand filters,  contact beds, trickling
      filters, and activated sludge processes are examples.

 Breakdown Voltage - Voltage at  which a discharge occurs between
      two electrodes.
Bulb ~ ^ke  glass  envelope  which incloses  an I incandescent  lamp
     or  an  electronic  tube.

Bushing  - An  insulating  structure  including  a  central  conductor,
     or  providing a central passage  for a conductor, with pro-
     vision for mounting on a barrier, conducting  or otherwise,
     for the  purpose of  insulating the conductor from  the barrier
     and conducting current from one side of the barrier  to
     the other .

Busbar - A  heavy  rigid,  metallic conductor,  usually uninsulated,
     used to  carry a large current or to  make  a common connection
     between  several curcuits.

Calcining - To heat to a high temperature  without  fusing, as to
     heat ^ unformed ceramic materials  in a  kiln, or to  heat ores,
     precipitates, concentrates  or residues ;so that hydrates,
     carbonates or other compounds are decomposed  and  volitile
     material is  expelled, e.g., to heat  limestone to  make lime.

Calibration - The determination, checking, or rectifying  of the
     graduation of any instrument  giving quantitative  measurements.
                                  XVI-2

-------
Capacitance - The ratio of the charge on one of the conductors
— —ol: a capacitor to the potential difference between the
     conductors.

Capacitor - Device composed of conducting plates or foils
     separated by thin layers of dielectric with the plates on      >.
     either side of the dielectric having opposite charges
     causing electrical energy to be stored in the polarized
     dielectric.

Carbon - A nonmetallic chiefly tetravalent element found native
	or as a constituent of coal, petroleum, asphalt,  limestone,
     etc.

Cathode - The primary source of electrons in an electron tube;
	in directly heated tubes the filament is the cathode,
     and in indirectly heated tubes a coated metal cathode  sur-
     rounds a heater.

Cathode Ray Tube - An electron-beam tube in which.the  beam  can
	be focused to a small cross  section on a luminescent screen
     and varied in position and intensity to produce a visible
     pattern.

Central Treatment Facility - Treatment  plant which co-treats
	process wastewaters  from more than one manufacturing opera-
     tion or co-treats process wastewaters with noncontact  cooling
     water or with non-process wastewaters  (e.g., utility blow-
     down, miscellaneous.runoff,  etc.).

Centrifugation  - The removal of water  in  a  sludge and  water slurry
	by  introducing the water  and sludge  slurry  into  a centrifuge.
-   The  sludge is driven outward with the  water  remaining  near
     the  center.  The  dewatered  sludge is  usually landfilled.

Ceramic  - A  product made  by  the baking or firing  of  a non-metallic
	"ilneral  such  as  tile,  cement, plaster,  refractories,  and
     brick.

Chemical  Coagulation  - The destabilization and intitial aggregation
	ol~colloidal  and  finely divided suspended matter by the addi-
      tion of a floe-forming  chemical.

Chemical Oxidation (Including Cyanide) - The addition of chemical
	iigents  to wastewater for the purpose of oxidizing pollutant
      material.

 Chemical Oxygen Demand (COD) - (1) A test based on the fact  that all
	organic compounds,  with few exceptions, can be oxidized to
      carbon dioxide and water by the action of strong oxidizing
                                  XVI-3

-------
      agents under acid conditions.  Organic matter is converted
      to carbon dioxide and water regardless of the biological
      assimilability of the substances.  One of the chief limita-
      tions is its ability to differentiate between biologically
      oxidizable and biologically inert organic matter.  The
      major advantage of this test is the short time required
      for evaluation (2 hrs).   (2) The amount of. oxygen required
      for the chemical oxidation of organics in a liquid.

 Chemical Precipitation - (1) Precipitation induced by addition of
      chemicals.  (2) The process of softening water by the addition
      of lime and soda ash as the precipitants.

 Chlorination - The application of chlorine to water or wastewater
      generally for the purpose of disinfection, but frequently
      for accomplishing other biological or dhemical results.

 Circuit Breaker - Capable of making, carrying, breaking currents
      under normal curcuit conditions and make, carry,  break
      under abnormal  i.e.  shortcircuits.

 Cleaning - The removal of soil and dirt (including grit and
      grease)  from a  workpiece using water with or without a
      detergent or other dispersing agent.

 Coil  7  A number of turns  of  wire used  to introduce inductance
      into an  electric  circuit,  to produce  magnetic flux,  or
      to react  mechanically to a changing magnetic flux.

 Coil-Core  Assembly - A unit made up  of  the  coil windings  of a
      transformer placed over  the magnetic  core.

 Coking  -  (1) Destructive distillation of coal  to  make  coke.
      (2) A process for thermally converting the heavy  residual
      bottoms of crude oil entirely to lower-boiling petroleum
      products  and by-product  pertroleum  coke^

 Colloids - A finely divided dispersion of one material called the
      dispersed phase"  (solid)  in another material which Is  called
      the "dispersion medium"  (liquid).  Normally  negatively  charged.

Composite Wastewater Sample - A combination of individual samples
      of water or wastewater taken at selected intervals and mixed
      in proportion to flow or time to minimize the effect of  the
     variability of an individual sample.

Concentric Windings - Transformer windings in which the low-voltage
     winding is in the form of  a cylinder next to the core, and
     the high-voltage winding,  also cylindrical, surrounds the
     low-voltage winding.
                                   XVI-4

-------
Conductor - A wire, cable, or other body or medium suitable for
     carrying electric current.

Conduit - Solid of flexible metal or other tubing through which
     insulated electric wires are run.

Contamination - A general term signifying the introduction into
	water of microorganisms, chemicals, wastes or sewage which
     renders the water unfit for its intended use.

Contractor Removal - The disposal of oils, spent solutions, or
     iiludge by means of a scavenger service.

Conversion Coating - A metal-surface coating consisting of a com-
     pound of the base metal.

Cooling Tower - A device used to cool water used in  the manufacturing
""	processes before returning the water for reuse.

Copper - A common  reddish chiefly univalent and bivalent metallic
—^element that  is ductile and malleable and one of  the best
     conductors of heat and electricity.

Core  ([Magnetic Core) - A  quantity of  ferrous material  placed  in
	 a coil or transformer to provide a better path  than air
     for magnetic  flux, thereby  increasing the inductance of  the
     coil and increasing  the coupling between the windings  of  a
     transformer.

Corona Discharge - A discharge of  electricity appearing  as  a
"~	laluish-purple glow'on the surface  of  and adjacent to  a
     conductor when the voltage  gradient  exceeds  a  certain  cri-
     tical  value;  due  to  ionization of  the surrounding air  by
      the high voltage.

Curing  - A heating/drying process  carried out in an enclosure
	where the  temperature  is  usually maintained at approximately
      150C.
 Current Carrying Capacity- The maximum current that can be con-
 	tinuously carried without causing permanent deterioration
      of electrical or mechanical properties of a device or
      conductor.

 Dag (Aquadag) - A conductive graphite coating on the inner and
 —  ^outer side walls of some cathode-ray tubes.

 Degreasing - The process of removing grease and oil from the surface
      of the basis material.
                                   XVI-5

-------
 Dewaterinq - A process whereby water is removed from sludge.

 Dicing ~ Sawing or otherwise machining a semiconductor wafer into
      small squares or dice from which transistors and diodes can
      be fabricated.

 Die ~ A tool or mold used to impact shapes to or to form impres-
      sions on materials such as metals and ceramics.

 Pie Cutting (Also Blanking) - Cutting of plastic or metal sheets
      into shapes by striking with a punch.

 Dielectric - A material that does not permit the conductance
      of electricity;  an insulator.

 Di-n-Octyl-Phthalate - A liquid dielectric that is presently
      being substituted 'for a PCB dielectric fluid.

 Diode (Semiconductor), (Also Crystal Diode., Crystal Rectifier)  -
      A^two electrode semiconductor device that utilizes the rec-
      tifying properties of a p-n junction or point contact.

 Discrete Device - Individually manufactured transistor, diode,
      etc.                                                     '

 Dissolved Solids - Theoretically the anhydrous residues of the  dis-
      solved constituents  in water.  Actually the term is defined
      by the method used in determination.   In water and wastewater
      treatment,  the Standard Methods tests are used.

 Distribution Transformer  - An element of  an electric  distribution
      system located near  consumers which  changes primary distribu-
      tion  voltage  to secondary distribution voltage.

 Dopant  - An impurity element added to semiconductor materials used
      in crystal  diodes  and transistors.

 Dragout -  The solution  that adheres  to the  part  or workpiece and is
      carried past  the edge of  the  tank.

 Dry Electrolytic Capacitor - An electrolytic  capacitor  with a paste
      rather than liquid electrolyte.

 prying Beds - Areas for dewatering of sludge  by  evaporation and
      seepage.

£EY. slug - Usually refers  to a plastic encased sintered tantalum
     slug type capacitor.
                                 XVI-6

-------
Dry Transformer - Having the core and coils neither impregnated
—   with an insulating fluid nor immersed in an insulating oil.

Effluent - The quantities, rates, and chemical, physical, bio-
 	logical, and other constituents of waters which  are discharged
     from point sources.

Electrochemical Machining  - The process whereby the workpiece
•"	becomes the anode and a  shaped cathode  is maintained in
     close proximity.  Electrolyte is pumped between  the
     electrodes and  a potential applied with the result that metal
     is rapidly dissolved  from  the work piece  in a selective man-
     ner  and the shape produced on the workpiece complements that
     of the cathode.

Electrolyte - A nonmetallic  electrical  conductor  in which  current
     Is carried by  the movement of ions.

Electron  Beam Lithography -  Similar  to  photolithography -  A fine
	b"^m~of~electrons  is used  to scan  a  pattern  and expose an
     electron-sensitive  resist  in the unmasked areas of the ob-
     ject surface.

Electron  Discharge  Lamp  - An electron lamp in which light is pro-
	duced by  passage of an electric current through a metallic
     vapor or  gas.

 Electron Gun - An electrode structure that produces and may con-
	trol7~~focus,  deflect and converge one or more electron
     'beams in an electron tube.

 Electron Tube - An  electron device in which conduction of electri-
 	"city is provided by electrons moving through a vacuum or
      gaseous medium within a gas tight envelope.

 Electroplating - The production of a thin coating of one metal
      on another by  electrodisposition.

 Emissive Coating -  An oxide coating applied to an electrode to
      enhance the emission of electrons.

 Emulsion Breaking - Decreasing the stability of dispersion of
      one liquid in  another.

 End-of-pipe Treatment - The  reduction and/or removal of pollutants
 	by  chemical treatment  just prior to actual discharge.

 Enitayial Layer - A (thin)  semiconductor layer having  the  same
   	Eirystaline orientation as the  substrate  on which  it  is grown.
                                   XVI-7

-------
 Epitaxial Transistor  - Transistor with  one  or more epitaxial  layers,

 Equalization - The process whe'reby waste  streams from different
      sources varying  in pH, chemical constituents, and flow rates
      are collected in a common container.   The effluent stream
      from this equalization tank will have  a fairly constant  flow
      and pH level, and will contain a homogeneous chemical mixture.
      This tank will help to prevent an  unnecessary shock to the
      waste treatment system.              ;

 Etch - To corrode the surface of a metal  in order to reveal its
      composition and structure.

 Extrusion - Forcing the carbon-binder-mixture through a die under
      extreme pressure to produce desireable shapes and characteris-
      tics of the piece.                   ;

 Field-effect Transistors - Made by the metal-oxide-semiconductor
      (MOS)  technique,  differ from bipolar ones in that only one
      kind of charge carrier is active in a single device.   Those
      that employ electrons are called n-MOS  transistors?  those
      that employ holes are p-MOS transistors.
                                           i
 Filament -  Metallic wire which is heated in  an incandescent
      lamp to produce light by  passing an electron current  through
      it.  A cathode in a fluorescent  lamp that emits  electrons
      when electric current is  passed  through it.

 Filtering Capacitor -  A capacitor used  in a  power-supply filter
      system  to provide a  low-reactance  path  for alternating cur-
      rents _ and thereby suppress  ripple  currents,  without affect-
      ing  direct currents.

 .F.ixed, Capacitor - A capacitor  having  a  definite capacitance
      valve that cannot be  adjusted.

 Float Pauge.- A device for measuring  the elevation of the surface
      of a liquid, the actuating element  of which  is a buoyant
      float that rests on the surface of  the:  liquid and rises
      or falls^with it.  The elevation of the surface is measured
      by a chain or tape attached to the  float.

Floe - A very fine, fluffy mass formed by  the aggregation of fine
      suspended particles,.                  ;
                                  XVI-8

-------
Flocculation - In water and wastewater treatment, the agglomeration
	—of colloidal and finely divided suspended matter after coagu-
     lation by gentle stirring by either mechanical or hydraulic
     means.  In biological wastewater treatment where coagulation
     is not used, agglomeration may be accomplished biologically.

Flocculator - An apparatus designed for the formation of floe in
     water or sewage.

Fjiow-proportioned Sample - A sampled stream whose pollutants are
~	tpportioned to contributing streams in proportion to  the
     flow rates of the contributing streams.

Fluorescent Lamp - An electric discharge lamp  in which phosphor
	Suiterials transform ultraviolet radiation from mercury
     vapor ionization to visible light.

Forming - Application of voltage to an electrolytic capacitor,
	"eJectrolytia rectifier or semiconductor device to pro-
     duce a desired permanent change in  electrical characteris-
     tics as part of the manufacturing process.

Frit S«»al - A  seal made by  fusing  together metallic powders  with
	 ITglass binder  for such  applications  as hermatically  sealing
     ceramic packages  for  integrated circuits.

Funnel"- The rear, funnel  shaped portion of the glass enclosure
     of  a  cathode  ray  tube.

Fuse - Overcurrent protective device w/circuit opening fusible
	 part  heated and severed  by overcurrent passage.

Gate - One of  the electrodes  in a field effect transistor.

Getter - A metal coating  found within a lamp that when activated
	by  an electric  current absorbs residual water vapor and
      oxygen from with a vacuum.

Glass  -  A hard,  amorphous, inorganic,  usually transparent,
	brittle substance made by fusing silicates, sometimes
      borates and phosphates with certain basic oxides and then
      rapidly cooling to prevent crystallization.

 Glow Lamp - An electronic device containing at least two elec-
	 trodes and an inert gas in which light is produced by a
      negative glow close to the negative electrode when a
      voltage is applied between the electrodes.

 Grab Sample - A single sample of wastewater taken at neither set
      time nor flow.
                                 XVI-9

-------
 Graphite - A soft black lustrous carbon that conducts electricity
      as a constituent of coal, petroleum, asphalt, limestone,
      etc.

 Grease - In wastewater, a group of substances including fats,
      waxes, free fatty acids, calcium and magnesium soaps,
      mineral oil and certain other nonfatty' materials.  The type
      of solvent and method used for extraction should be stated
      for quantification.
                                            f
 Grease Skimmer - A device for removing grease or scum from the
      surface of wastewater in a tank.      !

 Green Body - A carbon rod or piece prior to baking usually soft
      and quite easily broken.

 Grid - An electrode located between the cathode and anode of
      an^electron tube, which has one or more openings through
      which electrons or ions can pass,  and serves-to control the
      flow of electrons from cathode to anode.

 Grinding - The process of removing stock from a workpiece by the
      use of abrasive grains held by a rigid or semi-rigid binder.

 Hardness  - A characteristics of water,  imparted by salts of calcium,
      magnesium,  and iron such as bicarbonates,  carbonates,  sulfates,
      chlorides,  and^nitrates that cause curdling of soap,  deposi-
      tion of scale in boilers,  damage in some  industrial processes
      and  sometimes objectionable taste.   It may be determined by
      a  standard  laboratory procedure or computed from the amounts
      of calcium  and magnesium as well as iron,  aluminum, manganese,
      tarium,  strontium,  and zinc,  and is expressed as equivalent
      calcium carbonate.

HeavY Metals  - A general name given to  the  ions  of metallic ele-
      ments  such  as copper,  zinc,  chromium,  and  nickel.   They are
      normally removed from  wastewater by forming an insoluble
      precipitate (usually  a metallic hydroxide).

Holding Tank  - - A reservior to  contain  preparation materials -so
      as to be ready for immediate  service.  !

Hybrid Integrated  Circuits  -  Part  integrated, part  discrete cir-
      cuit.

Impact Extrusion - A cold extrusion  process for  producing tubular
     components by  stricking  a slug  of the metal, which  has  been
     placed in the cavity of  the die, with a punch  moving at
     high velocity.
                               . XVI-10

-------
impregnant - A material diffused into the carbon piece to provide
——the~desireable electronic characteristics of the piece.

Impregnate - To force a liquid substance into the spaces of a
     porous solid in order to change its properties.

Incandescent Lamp - An electric lamp producing light in which a
	metal1ic~rilament is heated white-hot in a vacuum by passage
     of an electric current through it.

Industrial Wastes - The liquid wastes from industrial processes
	ai~dlstinct from domestic or  sanitary wastes.

Influent - Water or other liquid,  either raw or partly treated,
	flowing into a reservior basin or  treatment plant.

In-Process Control Technology - The regulation and  conservation  of
	"chimTcals  and rinse water throughout the operations  as opposed
     to end-of-pipe treatment.

Insulating Paper - A  standard material  for  insulating  electrical
	eiuijment, usually consisting of bond  or draft paper coated
     with black or yellow  insulating varnish on both sides.

Insulation  (Electrical Insulation) - A  material having high elec-
—:	trical  resistivity and therefore  suitable  for  separating
     cidjacent  conductors  in an  electric circuit or  preventing
     possible  future  contact between  conductors.

Insulator  -  A  nonconducting support for an electric conductor.

integrated Circuit -  Assembly  of electronic devices interconnected
      into  circuits.

 Interleaved Winding - An arrangement of winding coils around,
	a transformer core in which the coils are wound in the form
      of a disk, with a group of disks for the low-voltage windings
      stacked alternately,  with a group of disks for the high-
      voltage windings.

 Intermittent Filter - A natural or artificial bed of sand  or other
	fine-grained material to the surface of which sewage  is inter-
      mittently added in flooding doses and through which it passes,
      the opportunity being given  for filtration and the maintenance
      of aerobic conditions.

 Ion Exchange - A reversible chemical reaction between a  solid  (ion
 	exchanger) and a fluid (usually a water solution) by  means
      of which  ions may be interchanged from one substance  to
      another.  The superficial physical structure  of  the  solid  is
      not affected.
                                   XVI-11

-------
  Ion Exchange Resins  -  Synthetic  resins containing  active  groups
       (usually  sulfonic, carboxylic, phenol, or substituted amino groups)
       that give the resin the property of combining with or exchanging
       ions between the  resin and  a solution.

  Ion Implantation - A process of  introducing impurities into the near
       surface regions of solids by directing a beam of ions at the
       solid.                                     ,

 Junction - A region  of transition between two different semiconduc-
       ting regions in a semiconductor device such as a p-n junction
       or between a metal and a semiconductor.

 Junction Box - A protective enclosure into which wires or cables are
       led and connected to form joints.

 Ini£e, Switch - Form of switch where moving blade enters stationary
      contact clips.                                               *

 Klystron - An evacuated electron-beam tube in which an initial velo-
      city modulation imparted to electrons in the* beam results
      subsequently in density modulation of the beam;  used as an
      amplifier in the microwave region or as an oscillator.

 Lagoon -  A man-made pond  or lake for holding wastewater for the
      removal of suspended  solids.  Lagoons are also used as  retention
      ponds after  chemical  clarification to polish the effluent and to
      safeguard against  upsets  in the clarifier;  for stabilization of
      organic matter  by  biological oxidation;  for  storage of  sludge-
      and for cooling  of water.

 Landfill - The  disposal of  ineret,  insoluble  waste  solids  by  dumping
     at an approved  site and covering  the  earth.

 Lapping - The mechanical abrasion or surface  planning  of the  semi-
     conductor  water  to produce  desired surface and wafer  thickness.

 Lime - Any of a family  of chemicals  consisting essentially of  calcium
     hydroxide  made from limestone  (calcite) which  is  composed almost
     wholly of  calcium  carbonates or a mixture of calcium  and magnesium
     carbonates.

Limiting Orifice - A  device that  limits flow by constriction to a
     relatively small area.  A constant flow can be obtained over a
     wide range of upstream pressures.

Machining - The process of removing stock from a workpiece by forcing
     a cutting tool through the workpiece removing  a chip of basis
     material.  Machining operations such as turning, milling, drilling
     boring, tapping, planing, broaching, sawing and cutoff,  shaving,
     threading, reaming, shaping, slotting, hobbing, filling, and cham-
     fering are included in this definition.
                                  XVI-12

-------
Magnaflux Inspection - Trade name for magnetic particle test.

Make-up* Water - Total amount of water used by any process/process
     step.

Mandrel - A metal support serving as a core around which the metals
	Ire wound and amealled to form a central hole.

Mask (Shadow Mask) - Thin sheet steel screen with thousands of
~~—' opertureFThrough which electron beams pass to a color picture
     tube screen.  The color of an image depends on the balance from
     each of three electron beams passing through the mask, one beam
     for each color.

Metal Oxide Semiconductor Device - A metal insulator semiconductor
	structure in which the insulating layer is an oxide of the subs-
     trate material; for a silicon substrate, the insulating  layer  is
     silicon dioxide (SiO2).
  *%
Mica - A group of aluminum silicate minerals that are characterized
	by their ability to split into thin, flexible flakes  because of
     tlieir basal cleavage.

Miligrams Per Liter  (mg/1) - This  is  a weight per volume designation
     used TrTwater and wastewater  analysis.

Mixed Media Filtration - A filter  which  uses two or  more filter materials
	o'f differing  specific gravities  selected  so as  to  produce a  tilter
     uniformly graded  from coarse  to  fine.

MQS -  (See Metal Oxide Semiconductor)

Mount Assembly - Funnel  neck  ending  of picture  tube  holding electron
     gun(s).

National  Pollutant Discharge  Elimination System (NPDES) -  The federal
	mechanism  for regulating point  source  discharge by means o£
     permits.

Neutralization  - Chemical  addition of either acid or base to a solution
	luch that  the pH is adjusted to approximately 7.

Noncontact Cooling Water - Water used for cooling which does not come
	Into~direct contact with any raw material, intermediate product,
      waste product or finished product.

 Non-Polar Capacitor - An electrolific capacitor having equal thicknesses
      of oxide film and both the anode and cathode.

 Oil Filled Capacitor - A capacitor whose conductor and insulating
 	"elements are immersed in an insulating fluid that is usually,
      but not necessarily, oil.
                                  XVI-13

-------
 Outfall - The point or location where sewage or drainage discharges
      from a sewer, drain, or conduit.

 Oxide Mask - Oxidized layer of silicon wafer through which "windows"
      are formed which will allow for dopants to be introduced into
      the silicon.

 Panel - The front, screen portion of the glass Enclosure of a cathode
      ray tube.

 PCB (Polychlorinated Biphenyl)  - A colorless liquid, used as an
      insulating fluid in electrical equipment.  (The future use of PCB
      for new transformers was banned by the Toxic Substances Control
      Act of October 1976.)

 gH ~ The negative of the logarithm of the hydrogen ion concentration
      Neutral water has a pH value of 7.   At pH lower than 7, a solution
      is acidic.   At pH higher than 7, a solution is alkaline.

    Adjustment - A means of maintaining the optimum pH through the use
      of chemical additives.   Can be manual, automatic,  or automatic
      with flow corrections.

 .Phase - One of the separate circuits or windings of a polyphase system,
      machine or other apparatus.

 Phase Assembly - The coil-core  assembly .of a single phase of a trans-
      former,                                     i

 Phosphate Coating - A conversion coating on metal,  usually steel,
      produced by dipping  it into a hot aqueous solution of iron,  zinc,
      or manganese phosphate.

 Phospaor - Crystalline inorganic  compounds that produces light when
      excited  by  ultraviolet  radiation.

 Photolithography - The process  by which  a microscopic pattern  is  trans-
      ferred from a photomask  to a meterial layer (e.g.,  SiO.,)  in  an
      actual circuit.                                        *

 Photomask  - A  film or  glass negative  that has  many  high-resolution
      images, used  in the production of semiconductor  devices and
      integrated  circuits.

jPhoton - A quantum of  electromagnetic energy.

 Photoresist - A  light-sensitive coating  that is  applied  to  a substrate
     or board, exposed, and developed prior to  chemical  etching; the
     exposed areas  serve as a mask for selective etching.
                                XVI-14

-------
Picture Tube - A cathode ray tube used in television receivers to
~~Produce an image by varying the electron beam intensity as the
     beam is deflected from side to side and up and down to scan a
     raster on the fluorescent screen at the large end of the tube.

Plate - (1)  Preferably called the anode.  The prinicpal electrode to
~~	which the electron stream is attracted in an electron tube.
     (2)  One of the conductive electrodes in a capacitor.

Polar capacitor - An electrolytic capacitor having an oxide film on
~~	only one foil or electrode which forms the anode or positive
     terminal.

Pole Type Transformer - A transformer suitable for mounting on a pole
~~    or similar structure.

Polishing - The process of removing stock from a workpiece by the
~	action of loose or loosely held abrasive grains carried to the
     workpiece by a flexible support.  Usually, the amount of stock
     removed in a polishing operation is only incidental to achieving
     a desired surface finish or appearance.

Pollutant - The term  "pollutant" means dredged spoil, solid wastes,
	Incinerator residue, sewage, garbage, sewage  sludge, munitions,
     chemical wastes, biological materials, radioactive materials
     heat, wrecked or discarded equipment, rock, sand, cellar dirt and
     industrial, municipal and agricultural waste  discharged  into
     waiter.

Pollutant Parameters  - Those constituents of wastewater determined to  be
     detrimental and, therefore, requiring control.

Pollution Load - A measure of  the unit mass of a wastewater  in  terms
~	"oTTts  solids or oxygen-demanding characteristics, or  in terms
     of  harm  to receiving waters.

Polyelectrolytes - Used  as  a  coagulant or a  coagulant aid in water and
	wastewater treatment.  They are synthetic  or  natural polymers
     containing ionic constituents.   They may be  cationic,  anionic, or
     nqnionic.

Power  Regulators - Maintain constant output current for changes in
     "temperature output load,  line current and  time.

Power  Transformer  -  Transformer used at a generative station to step.up
™	the generated  voltage to high levels for transmission..

Prechlorination -  (1) Chlorination of water prior to filtration.  (2)
      Chlorination of sewage prior to treatment.
                                  XVI-15

-------
 Precipitate - The discrete particles of material rejected from a
      liquid solution.

 Pressure Filtration - The process of solid/liquid phase separation
      effected by passing the more permeable liquid phase through a
      mesh which is impenetrable to the solid phase.

 Pretreatment - Any wastewater treatment process! used to reduce
      pollution load partially before the wastewater is introduced
      into a main sewer system or delivered to a treatment plant for
      substantial reduction of the pollution load.

 Primary Feeder Circuit (Substation)  Transformers - These transfor-
      mers (at substations) are used  to reduce the voltage from the
      subtransmission level to the primary feeder level.

 Primary Treatment - A process to remove substantially all floating
      and settleable solids in wastewater and partially to reduce the
      concentration of suspended solids.

 Primary Winding - Winding on the supply (i.e.  input)  side of a trans-
      former irrespective of whether  the transformer is of the step-
      up or step-down type.

 Priority Pollutant - The 129 specific  pollutants established by the
      EPA from the 65 pollutants and  classes  of pollutants as outlined
      in the consent decree of June 8,  1976.

 Process  Waste Water - Any water which  during' manufacturing or processing,
      comes  into direct contact with  or results from the  production or
      use of any raw materials,  intermediate  product,  finished product,
      by-product,  or waste product.

 Process  Water - Water prior to its direct  contact  use  in a process
      or  operation.   (This water may  be any combination of raw water,
      service  water,  or either process  wastewater or treatment facility
      effluent to  be  recycled or reused.)

Pyrolysis - The breaking  apart of complex  molecules into simpler units
     by  the use of heat,  as  in the pyrolysis of-heavy  oil  to  make
     gasoline.

Quenching - Shock cooling by  immersion  liquid  or molten  material into
     a cooling  medium  (liquid  or gas);  used in metallurgy, plastics
     forming  and petroleum  refining.
                                 XVI-16

-------
Raceway - A channel used to hold and protect wires, cables or
     busbars.

Rapid sandfliter - A filter for the purification of water where water
     which has been previously treated, usually by coagulation and
     sedimentation, is passed through a filtering medium consisting
     of a layer of sand or prepared anthracite coal or other suitable
     mciterial, usually from 24 to 30 inches thick and resting on a
     sxipporting bed of gravel or a porous medium such as carborundum.
     The filtrate is removed by a drain system.  The filter is cleaned
     periodically by reversing the flow of the water through the   ,
     filtering medium.  Sometimes supplemented by mechanical or air
     agitation during backwashing to remove mud and other impurita.es
     that are lodged in the sand.

Raw Wastewater - Plan water prior to any treatment or use.

                   • '• .»•'.'            ' .  ' .
Rectifier -  (1) A device for converting alternating current into direct
	'	current.  (2) A nonlinear circuit component that, ideally, allows
     current to flow in one direction unimpeded but allows no current
     to flow in the other direction.

Recycled Water - Process wastewater or treatment facility effluent
     .which is recirculated to the same process.

Resistor - A device designed to have a definite amount of resistance,
   !used in circuits to limit current flow or to  provide a voltage
     drop.

Retention Time - The time.allowed for  solids  to collect  in a  settling
     tank".   Theoretically retention time  is equal  to  the volume of
     the tank divided by the flow rate.   The  actual retention time  is
     determined by  the purpose of the  tank.   Also,  the design residence
     time in a tank or reaction vessel which  allows a chemical reaction
     to go to completion, such as the  reduction of hexavalent chromium
     or the  destruction of cyanide.

Reused Water - Process wastewater or treatment  facility  effluent  which
     is further used  in a different manufacturing  process.

Rinse  - Water for  removal of dragqut by  dipping,  spraying,  fogging,
     etc.

Rolled Capacitor -  Refers to the  construction of  a capacitor. Aluminum
	foil with attached  leads with  at  least  one  space larger is  rolled
     and inserted  into  a capacitor  case.

Sanitary Sewer. - A sewer that carries  liquid and  water  wastes from
     residences, commercial buildings,  industrial  plants,  and institu-
     tions  together with minor  quantities of ground,  storm,  and  surface
     waters  that are not admitted intentionally.
                                    XVI-17

-------
 Sanitary Water - The supply of water used for sewage transport
      and the continuation of such effluents to disposal.

 Secondary Settling Tank - A tank through which effluent from
      some prior treatment process flows for the purpose of re-
      moving settleable solids.             :

 Secondary Wastewater Treatment - The treatment of wastewater by
      biological methods after primary treatment by sedimentation.

. Secondary Winding - Winding on the load (i.e. output) side of a
      transformer irrespective of whether the transformer is of
      the step-up or step-down type.

 Sedimentation - Settling of matter suspended in water by gravity.
      It is usually accomplished by reducing the velocity of the
      liquid below the point at which it can transport the sus-
      pended material.                      i

 Semiconductor - A solid crystalline material whose electrical
      conductivity is intermediate between that of a metal and
      an insulator.                          i

 Settleable Solids - (1) That matter in  wastewater which will  not
      stay zn suspension during a preselected settling period,
      such as one hour,  but  either settles to the bottom or floats
      to the top.   (2) In the Imhoff cone test,  the volume of
      matter that settles to the bottom  of the cone in one hour.

Sewer ~ A Pipe  or conduit,  generally closed,  but normally not
      flowing full  for carrying sewage and other waste liquids.

Silvering -  The deposition  of  thin  films of  silver on glass,  etc.
      carried by one of  several  possible processes.

Skimming  Tank - A tank  so designed  that floating  matter will
      rise and remain on the  surface  of  the wastewater until re-
      moved,  while the liquid discharges continuously  under cer-
      tain walls or  scum boards.

Sludge  -  The solids  (and accompanying water and organic matter)
      which are  separated from  sewage or industrial  wastewater.

Sludge  Cake  - The material resulting from air drying  or dewatering
      sludge  (usually forkable or  spadable).

Sludge Disposal - The final disposal of  solid wastes.

Sludge Thickening - The increase  in solids concentration of sludge
     in a sedimentation or digestion tank.  '
                                 XVI-18

-------
Snubber - Shock absorber.

Soldering - The process of joining metals by flowing a thin
 'Tcapillary thickness) layer of nonferrous filler metal
     into the space between them.  Bonding results from the in-
     timate contact produced by the dissolution of a small
     .amount of base metal in the molten filler metal, without
     fusion of the base metal.  The term soldering is used
     where the temperature range falls below an arbitrary
     value, such as 425C (800F).

Solvent - A liquid capable of dissolving or dispersing one or
     more other substances.

Solvent Degreasing - The removal of oils and grease from a
     workpiece using organic solvents or solvent vapors.

Sputtering - A process to deposit a thin layer of metal on
     a solid surface in a vacuum.  Ions bombard a cathode which
     emits the metal atoms.

Stacked Capacitor - Referes to the multiple layering of di-
     electric and conducting surfaces, i.e. ceramic and glass
     encapasulated.

Stamping - Almost any press operation including blanking,
     shearing, hot or cold farming, drawing, blending, or coining.

Steel - An iron base alloy, malleable under proper conditions,
     containing up to about 2% carbon.

Step-Down Transformers  (Substation) - A transformer in which
     the AC voltages of the secondary windings are lower than
     those applied to the primary windings.

Step-Up Transformer - Transformer in which the energy transfer
     iss from a low-voltage winding to a high-voltage winding
     or windings.

Studs •• Metal pins in glass of picture tube onto which shadow
     mask is hung.

Substation - Complete assemblage of plant, equipment, and
     the necessary buildings  at  a place where electrical
     energy is received  (from one or more power-stations)
     for conversion  (e.g.  from AC to DC by means of  reactifiers,
     rotary converters,  for stepping-up or down by means of
     transformers, or for control  (e.g. by means of  switch-
     gear, etc.).
                                   XVI-19

-------
 Subtransmission (Substation) Transformers - At the end of
      a transmission line, the voltage is reduced to the
      subtransmission level (at substations) by subtransmission
      transformers.

 Suspended Solids - (1) Solids that either float on the surface
      of, or are in suspension in water, wastewater, or other
      liquids, and which are largely removable by laboratory
      filtering.  (2)  The quantity of material removed from
      wastewater in a  laboratory test, as prescribed in "Stan-
      dard Methods for the Examination of Water and Wastewater"
      and referred to  as non-filterable residue.
                                          i'
 Tantalum - A lustrous, platinum-gray ductile metal used in
      making dental and surgical tools, penpoints,  and electronic
      equipment.

 Tantalum Foil - A thin sheet of tantalum, ^usually  less than
      0.006 inch thick.                   |

 Terminal - A screw, soldering lug or other  point to which
      electric connections can be made.

 Testing  - A procedure  in which the performance of  a product is
      measured under various  conditions.

 Thermoplastic Resin -  A material  with a linear macro-molecular
      structure that will repeatedly soften  when heated and
      harden when cooled; for  example styrene,  acrylics,  cellu-
      losics,  polyethylenes, vinyls,  nylons!  and. fluorocarbons.

 Thermosetting Resin -  A plastic  that solidifies when first heated
      under pressure, and which cannot be rpmelted  or remolded
      without destroying its original characteristics;  examples
      are  epoxics, melamines,  phenolics and!  ureas.

 Transformer - Stationary apparatus  for transforming,  electrical
      energy at one alternating voltage intp  electrical energy
      at another (usually different)  alternating voltage,  by
      means  of magnetic  coupling  (without change-of  frequency).

Transistor  -  An  active  component  of  an electronic circuit con-
      sisting  of  a small  block of  semiconducting  material  to
     which  at  least three electrical  contacts  are made; used
     as an  amplifier,  detector, or  switch.

Trickling Filter - A filter consisting of an artificial bed of
     coarse material,  such as-broken  stone,  clinkers, slats, or
     brush over which sewage is distributed and applied in
     drops, films, or spray, from troughs, drippers, moving
     distributors or fixed nozzles and through which it trickles
     to the underdrain giving opportunity for the formation
     of zoogleal slimes which clarify and oxidize the sewage.
                                   XVI-20

-------
Trimmer Capacitors - These are relatively small variable ca-
	paoitors used in parallel with larger variable or fixed
     capacitors to permit exact adjustment of the capacitance of
     the parallel combination.

Vacuum Filter - A filter consisting of a cylindrical drum mounted
     on"a horizontal axis, covered with a filter cloth revolving
     with a partial submergence in liquid.  A vacuum is maintained
     under the cloth for the larger part of a revolution to ex-
     tract moisture and the cake is scraped off continuously.

Vacuum Metalizing - The process of coating a workpiece with
     metal by flash heating metal vapor in a high-vacuum
     chamber containing the workpiece.  The vapor condenses on
     all exposed surfaces.

Vacuum Tube - An electron tube evacuated to such a degree that
     Its electrical characteristics are essentially unaffected
     by the presence of residual gas or vapor.

Variable Capacitor - A capacitor whose capacitance can be
     varied continuously by moving one set of metal plates
     with Respect to another.

Voltage Breakdwon - The voltage necessary to cause insulation
     failure.

Voltage Regulator - Like a transformer, it corrects charges in
     current to provide continuous, constant current flow.

Welding - The process of joining two or more pieces of material
     by applying heat, pressure or both, with or without
     filler material, to produce a localized union through
     fusion or recrystallization across the interface.

Wet Air Scrubber - Air pollution control device which produces
     a~~wastewater stream.

Wet Capacitor -  (See oil-filled capacitor)

Wet Slug Capacitor - Refers  to a sinterted tantalum capacitor
     where the anode is placed in  a metal can,  filled with  an
     electrolyte and then  sealed.

Wet Tantalum Capacitor -. A polar capacitor the  cathode  of which
     Ii a  liquid electrolyte (a highly ionized  acid or  salt
     solution).

Wet Transformer  -• Having  the core  and  coils  immersed  in an
     insulating  oil.

Yoke - A  set of  coils placed over  the  neck  of  a magnetically
     deflected  cathode-ray tube  to deflect  the  electron beam
     horizontally  and vertically when  suitable  currents are
     passed  through  them.
                                   XVI-21

-------

-------
                          APPENDIX A
 PCB Use  as  a  Dielectric  Fluid
 Polychlorinated  biphenyl  is  an excellent dielectric fluid for
 particular  applications.   It is inexpensive,  fire resistant,
 chemically  stable  and  is  only slightly soluble in water.   Large
 numbers  of  power factor correction capacitors and small paper/
 foil  or  film/foil  capacitors were previously  manufactured using
 PCB as a dielectric fluid.    The smaller capacitors were used in
 motor controls,  fluorescent  light ballasts and in the circuitry
 of such  common products as television sets, microwave ovens and
 computers.   PCB  transformers in use in 1978 numbered 140,000
 Accounting  "for'2%  of all  oil filled transformers.  The majority
 of oil filled  transformers are filled with a petroleum oil similar
 to a  low viscosity lubricating oil.

 A ban on the "manufacture,  processing or distribution" of PCB
 fluids was  enacted through the Toxic Substances Control Act of
 October  11, 1976.   PCB is considered toxic to both man and the
 natural  environment.  Although the ban became effective on January
 1, 1978, PCS manufacture  was discontinued by the major suppliers
 in 1977.

 Although the PCB ban prohibits manufacture of PCB capacitors and
.transformers,  the continued  use of these components is allowable
 for an  indefinite period  of  time because they are considered
 "totally enclosed".  PCB  was never used in oil filled circuit
 breakers, and  thus these  components are not mentioned in the
 regulations on PCB fluids.

 The PCB  Rule (appearing in the Federal Register on May 31, 1979)
 outlines procedures for the  disposal of PCB capacitors; for the
 repair  and reconditioning of PCB transformers; for the storage of
 PCB  fluids and fluids contaminated with PCB contaminated articles,
 and  for  the disposal of PCB fluids and articles.  These regulations
 are  summarized in Table A-l.

 The  major problems concerning PCB  in the Electrical & Electronic
 Components Category are the decontamination of plant equipment,
 plant facilities and plant grounds, and the storage of PCB fluid.
 At  present, there is no legal means for disposing of PCB.  Complete
 records  must be maintained on the PCB presently remaining  in
 equipment and on PCB currently  in  storage.
                                    A-l

-------
                         TABLE A-l
         SUMMARY - PCS RULE REGULATIONS CONCERNING
                TRANSFORMERS AND CAPACITORS
                     (AFTER JULY 1, 1979)     "•
DEFINITIONS

1.   PCS Transformer - Transformer filled with dielectric  fluid
     containing > 500 mg/1 PCB.              ;

2.   PCB Contaminated Transformer - Transformer  filled with
     dielectric fluid containing between 50 and  500 mg/1 PCB.

3.   PCB Capacitor - Capacitor containing PCB dielectric fluid.

4.   PCB Fluid - Fluid containing in excess of 500 mg/1 of PCB.

5.   PCB Contaminated Fluid. - Fluid containing between 50 mg/1
     and 500 mg/1 of. PCB.
     PRESENT USE - Regulation allows indefinite continued use of
     totally enclosed PCB components including PCB capacitors and
     PCB transformers (see below for PCB railroad transformers).

     TRANSFORMER SERVICING -

     PCB Tranformers; Can drain oil, filter oil, replace gaskets,
     return oil.O.K. to reuse PCB oil Or use inventory PCB oil.

     PCB Contaminated Transformers; Can drain fluid and rebuild
     transformer i.e. remove and rewind coils.

     Manufacture; It is illegal to manufacture PCB transformers
     of PCB capacitors unless exemption is obtained from the EPA.

     PCB Manufacture; The manufacture, processing or distribution
     in commerce of PCB is prohibited without an exemption obtained
     from the EPA.

     PCB Railroad Transformers; Fluid in railroad transformers
     must comply with the following schedule;,
                                             [
     Present - Jan. 1, 1982        100% PCB OK
     Jan. lr 1982 - Jan. 1, 1984   £ 6% PCB OK
     Jan. 1, 1984 - ON             £ 1000 ppm PCB OK
                             A-2

-------
              TABLE A-l  (CONTINUED)
CAPACITOR DISPOSAL;

Companies previously involved  in PCB  capacitor manufacture and
PCB equipment manufacture may  dispose of  PCB  capacitors by
1) approved incinerator, or 2)  approved chemical waste landfill
(up until Jan 1, 1980).  Individuals  not  involved in PCB
equipment manufacture may dispose  of  small  PCB capacitors
as municipal solid waste.  Large PCB  capacitors must be
disposed according to 1) or 2)  above.

TRANSFORMER DISPOSAL -


PCB Transformers; 1) approved  incinerator,  2)  chemical
waste landfill after transformer is drained of PCB and
subsequenctly flushed with a solvent.  PCB  contaminated
solvent disposal in an approved manner (see below).
       i1          .                         •.-•--
PCB Contaminated Transformer:  Drain transformer of PCB
contaminated fluid.
manner (see below).
regulated by rule.

PCB DISPOSAL -
Dispose of fluid in an approved
Transformer structure disposal not
PCB; Any fluid containing  >500  mg/1  PCB must be disposed of
by incineration in an  incinerator  approved by the EPA.

PCB Contaminated Fluid; Fluids  containing between 50 mg/1
and 500 mg/1 PCB can be disposed of:  1) in an approved
incinerator, 2) in a high  efficiency boiler,.or 3)  in an
approved chemical waste landfill.

PCB STORAGE

PCB and PCB contaminated fluid  may be stored for eventual
disposal in any of several ways as outlined in the PCB
rule. e.g. drums in a  diked building, in undamaged
PCB equipment until Jan 1,  1983,  in  large tanks or tank
cars of approved types.
 *U.S. GOVERNMENT PRINTING OFFICE: 1980-311-726:3912
                           A-3

-------

-------

-------
United States
Environmental Protection
Agency
Official Business
Penalty for Private Use
$300
Special Fourth-Class Rate
Book
Postage and Fees Paid
EPA
Permit No. G-35
Washington DC 20460

-------