United State*
Environmental Protection
Agency
Effluent Guidelines Division
WH-552
Washington DC 20460
440182075B
Water and Waste Management
Development
Document for
Effluent Limitations
Guidelines and
Standards for the
Electrical and
Electronic Components
Proposed
Point Source Category
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DEVELOPMENT DOCUMENT
for
EFFLUENT LIMITATIONS GUIDELINES
for the
ELECTRICAL AND ELECTRONIC COMPONENTS
POINT SOURCE CATEGORY
Anne M. Gorsuch
Administrator
Steven Schatzow
Director
Office of Water Regulations and Standards
5
'O
ut
O
T
Jeffery Denit, Acting Director
Effluent Guidelines Division
G. Edward Stigall, Chief
Inorganic Chemicals Branch
Richard Kinch
Project Officer
David Pepson
Technical Project Monitor
July 1982
U.S. Environmental Protection Agency
Office of Water
Office of Water Regulations and Standards
Effluent Guidelines Division
Washington, D.C. 20460
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TABLE OF CONTENTS
SECTION
TITLE
EXECUTIVE SUMMARY
CONCLUSIONS
PROPOSED EFFLUENT LIMITATIONS AND STANDARDS
INTRODUCTION
1.1 ORGANIZATION AND CONTENT OF THIS DOCUMENT
1.2 SOURCES OF INDUSTRY DATA
LEGAL BACKGROUND
2.1 PURPOSE AND AUTHORITY
2.2 GENERAL CRITERIA FOR EFFLUENT LIMITATIONS
2.2.1 BPT Effluent Limitations
2.2.2 BAT Effluent Limitations
2.2.3 BCT Effluent Limitations
2.2.4 New Source Performance Standards
2.2.5 Pretreatment Standards For Existing Sources
2.2.6 Pretreatment Standards For New Sources
INDUSTRY SUBCATEGORIZATION
3.1 E&EC CATEGORY DEVELOPMENT
3.2 RATIONALE FOR INDUSTRY SUBCATEGORIZATION
3.3 SUBCATEGORY LISTING
PAGE
1
1
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DESCRIPTION OF THE INDUSTRY
4.1 SEMICONDUCTORS
4.1.1 Numbers Of Plants And Production Capacity
4.1.2 Products
4.1.3 Manufacturing Processes And Materials
4.2 ELECTRONIC CRYSTALS
4.2.1 Number Of Plants
4.2.2 Products
4.2.3 Manufacturing Processes And Materials
4.3 ELECTRON TUBES
4.4 PHOSPHORESCENT COATINGS
4.5 CAPACITORS, FIXED
4.6 CAPACITORS, FLUID-FILLED
4.7 CARBON AND GRAPHITE PRODUCTS
4.8 MICA PAPER
4.9 INCANDESCENT LAMPS
4.10 FLUORESCENT LAMPS
4-1
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4-7
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4-16
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TABLE OF CONTENTS (CONT)
SECTION TITLE
4.11 FUEL CELLS
4.12 MAGNETIC COATINGS
4.13 RESISTORS
4.14 TRANSFORMERS, DRY
4.15 TRANSFORMERS, FLUID-FILLED
4.16 INSULATED DEVICES, PLASTIC AND PLASTIC LAMINATED
4.17 INSULATED WIRE AND CABLE, NON-FERROUS
4.18 FERRITE ELECTRONIC PARTS
4.19 MOTORS, GENERATORS, AND ALTERNATORS
4.20 RESISTANCE HEATERS
4.21 SWITCHGEAR
5 WASTEWATER CHARACTERISTICS
5.1 SAMPLING AND ANALYTICAL PROGRAM
5.1.1 Pollutants Analyzed
5.1.2 Sampling Methodology
5.1.3 Analytical Methods
5.2 SEMICONDUCTORS
5.2.1 Wastewater Flows
5.2.2 Wastewater Sources
5.2.3 Pollutants Found and Their Sources
5.3 ELECTRONIC CRYSTALS
5.3.1 Wastewater Flows
5.3.2 Wastewater Sources
5.3.3 Pollutants Found and Their Sources
5.4 CARBON AND GRAPHITE PRODUCTS
5.5 MICA PAPER
5.6 INCANDESCENT LAMPS
5.7 FLUORESCENT LAMPS
5.8 FUEL CELLS
5.9 MAGNETIC COATINGS
5.10 RESISTORS
5.11 DRY TRANSFORMERS
5.12 ELECTRON TUBES
5.13 PHOSPHORESCENT COATINGS
5.14 ALL OTHER SUBCATEGORIES
6 SUBCATEGORIES AND POLLUTANTS TO BE REGULATED,
EXCLUDED OR DEFERRED
6.1 SUBCATEGORIES TO BE REGULATED
6.1.1 Pollutants To Be Regulated
6.2 TOXIC POLLUTANTS AND SUBCATEGORIES NOT REGULATED
6.2.1 Exclusion of Pollutants
6.2.2 Exclusion of Subcategories
6.3 CONVENTIONAL POLLUTANTS NOT REGULATED
6.4 SUBCATEGORIES DEFERRED
PAGE
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TABLE OF CONTENTS (CONT)
SECTION
7.1
7.2
7.3
8.1
8.2
8.3
TITLE
CONTROL AND TREATMENT TECHNOLOGY
CURRENT TREATMENT AND CONTROL PRACTICES
7.1.1 Semiconductor Subcategory
7.1.2 Electronic Crystals Subcategory
APPLICABLE TREATMENT TECHNOLOGIES
7.2.1 pH Control
7.2.2 Fluoride Treatment
7.2.3 Arsenic Treatment
7.2.4 Total Toxic Organics Treatment
TREATMENT AND CONTROL OPTIONS
SELECTION OF APPROPRIATE CONTROL AND TREATMENT
TECHNOLOGIES AND BASES FOR LIMITATIONS
7-8
8-1
8-1
SEMICONDUCTOR SUBCATEGORY
8.1.1 Best Practicable Control Technology Currently
Available (BPT) 8-1
8.1.2 Best Available Technolgoy Economically Available (BAT) 8-2
8.1.3 Best Conventional Pollutant Control Technology (BCT) 8-4
8.1.4 New Source Performance Standards (NSPS) 8-4
8.1.5 Pretreatment Standards For New And Existing Sources
(PSNS AND PSES) 8-5
ELECTRONIC CRYSTALS SUBCATEGORY
8.2.1 Best Practicable Control Technology Currently
Available (BPT)
8.2.2 Best Available Technology Economically
Achievable (BAT)
8.2.3 Best Conventional Pollutant Control Technology (BCT)
8.2.4 New Source Performance Standards (NSPS)
8.2.5 Pretreatment Standards For New And Existing Sources
(PSNS AND PSES)
STATISTICAL ANALYSIS
8.3.1 Calculation Of Variability Factors
8.3.2 Calculation Of Effluent Limitations
9 COST OF WASTEWATER CONTROL AND TREATMENT
9.1 COST ESTIMATING METHODOLOGY
9.1.1 Direct Investment Costs For Land and Facilities
9.1,2 Annual Costs
9.1,3 Items Not Included In Cost Estimate
9.2 COST ESTIMATES FOR TREATMENT AND CONTROL OPTIONS
9.2.1 Option 1
9.2.2 Option 1
9.2.3 Option 3
9.3 ENERGY AND NON-WATER QUALITY ASPECTS
10 ACKNOWLEDGEMENTS
11 REFERENCES
12 GLOSSARY
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LIST OF FIGURES
NUMBER
TITLE
PAGE
4-1 Silicon Integrated Circuit Production
4-2 Basic Manufacturing Process For Electronic
Crystals
7-1 Total Toxic Organics in Raw Waste at Twelve
Semiconductor Plants
9-1 Annual Cost vs. Flow For Option 2 Technology
9-2 Annual cost vs. Flow for Option 3 Technology
4-3
4-13
7-7
9-10
9-12
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LIST OF TABLES
NUMBER TITLE PAGE
1 BPT Proposed Regulations For Semiconductors 2
2 BAT Proposed Regulations For Semiconductors 2
3 BCT Proposed Regulations For Semiconductors 2
4 NSPS Proposed Regulations For Semiconductors 2
5 PSES AND PSNS Proposed Regulations For
Semiconductors 3
6 BPT Proposed Regulations For Electronic Crystals 3
7 BAT Proposed Regulations For Electronic Crystals 3
8 BCT Proposed Regulations For Electronic Crystals 4
9 NSPS Proposed Regulations For Electronic
Crystals 4
10 PSNS AND PSES Proposed Regulations For
Electronic Crystals 4
4-1 Profile of Electronic Crystals Industry 4-8
5-1 The Priority Pollutants 5-11
5-2 Semiconductor Process Wastewater Flow,
Average Plant 5-4
5-3 Semiconductor Summary of Raw Waste Data 5-13
5-4 Semiconductor Process Wastes, Plant 02040 5-15
5-5 Semiconductor Process Wastes, Plant 02347 5-19
5-6 Semiconductor Process Wastes, Plant 04294 \ 5-21
5-7 Semiconductor Process Wastes, Plant 04296 y 5-27
5-8 Semiconductor Process Wastes, Plant 06143 5-29
5-9 Semiconductor Process Wastes, Plant 30167 5-38
5-10 Semiconductor Process Wastes, Plant 35035 5-46
5-11 Semiconductor Process Wastes, Plant 36133 5-50
5-12 Semiconductor Process Wastes, Plant 36135 5-54
5-13 Semiconductor Process Wastes, Plant 36136 5-56
5-14 Semiconductor Process Wastes, Plant 41061 5-60
5-15 Semiconductor Process Wastes, Plant 42044 5-70
5-16 Semiconductor Subcategory TTO* Analysis -
Individual Process Streams and Associated
Effluent Streams 5-74
5-17 Summary of Wastewater Quantities Generated
In The Electronic Crystals Subcategory 5-6
5-18 Electronic Crystals Summary of Raw Waste Data 5-75
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LIST OF TABLES (CONT)
NUMBER
TITLE
PAGE
5-19 Results of Wastewater Analysis, Plant 301 5-76
5-20 Results of Wastewater Analysis, Plant 304 5-77
5-21 Results of Wastewater Analysis, Plant 380 5-78
5-22 Results of Analysis, Plant 401 5-79
5-23 Results of Wastewater Analysis, PIant 402 5-80
5-24 Results of Analysis, Plant 403 5-81
5-25 Results of Wastewater Analysis, Plant 404 5-82
5-26 Results of Wastewater Analysis, Plant 405 5-86
6-1 Pollutants Comprising Total Toxic Organics 6-4
6-2 Toxic Pollutants not Detected 6-7
7-1 TTO Analysis of Process Streams and Effluent
Streams 7-6
8-1 Proposed BPT Limitations, Semiconductors 8-1
8-2 Proposed BAT Limitations, Semiconductors 8-2
8-3 Historical Performance Data Analysis of Effluent
Fluoride With Hydroxide Precipitation/Clarifi-
cation System 8-3
8-4 Proposed BCT Limitations, Semiconductors 8-4
8-5 Proposed NSPS Limitations, Semiconductors 8-4
8-6 Proposed PSES and PSNS Limitations, Semiconductors 8-5
8-7 Proposed BPT Limitations, Electronic Crystals 8-6
8-8 Historical Performance Data Analysis of Effluent
Arsenic With Hydroxide Precipitation/Clarifi-
cation 8-8
8-9 Proposed BAT Limitations, Electronic Crystals 8-8
8-10 Proposed BCT Limitations, Electronic Crystals 8-9
8-11 Proposed NSPS Limitations, Electronic Crystals 8-10
8-12 Proposed PSES and PSNS Limitations, Electronic
Crystals 8-11
9-1 Treatment and Control Options Selected As Bases
For Effluent Limitations 9-7
9-2 Model Plant Treatment Costs, Option 2 9-9
9-3 Model Plant Treatment Costs, Option 3 9-11
9-4 Model Plant Treatment Costs, Option 5 9-13
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EXECUTIVE SUMMARY
CONCLUSIONS
A study of the Electrical and Electronic Components Industrial
Point Source Category was undertaken to establish discharge
limitations guidelines and standards. The industry was
subcategorized into 21 segments based on product type. Of the
21 subcategories, 17 have been excluded under Paragraph 8 of the
NRDC Consent Decree, two have been deferred, and for two
subcategories, regulations are being proposed. The last two
subcategories are Semiconductors and Electronic Crystals. (A
detailed discussion of the subcategories excluded and deferred
is provided in Section 6 of this document.)
In the Semiconductor and Electronic Crystals subcategories,
pollutants of concern include fluoride, toxic organics, arsenic,
and total suspended solids. The major source of fluoride is the
use of hydrofluoric acid as an etchant or cleaning agent. Toxic
organics occur from the use of solvents in cleaning and degreas-
ing operations. Arsenic is only found in significant concentra-
tions at facilities that manufacture gallium or indium arsenide
crystals; it is present in the wastewater as a result of the
manufacturing process. Suspended solids are only found in
significant concentrations at facilities that manufacture
crystals where the solids come from cutting and grinding
operations.
Several treatment and control technologies applicable to the
reduction of pollutants generated by the manufacture of semi-
conductors and electronic crystals were evaluated, and the costs
of these technologies were estimated. Pollutant concentrations
achievable through the implementation of these technologies were
based on industry data and transfer of technology assessments
from industries with similar waste characteristics. These con-
centrations are presented below as proposed limitations and
standards for the Semiconductor and Electronic Crystals sub-
categories.
PROPOSED EFFLUENT LIMITATIONS AND STANDARDS
For both subcategories. Tables 1 through 10 present proposed
regulations for Best Practicable Control Technology (BPT), Best
Available Control Technology (BAT), Best Conventional pollutant
Control Technology (BCT), New Source Performance Standards
(NSPS), and Pretreatment Standards for New and Existing Sources
(PSNS and PSES). All limitations and standards are expressed as
milligrams per liter.
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TABLE 1: BPT PROPOSED REGULATIONS FOR SEMICONDUCTORS
Pollutant
Total Toxic Organics *
PH
24-hour
Maximum
(mg/1)
0.47
30-day
Average
(mg/1)
**
pH Range
6-9
TABLE 2: BAT PROPOSED REGULATIONS FOR SEMICONDUCTORS
Pollutant
Total Toxic Organics *
Fluoride
24-hour
Maximum
(mg/1)
0.47
32
30-day
Average
(mg/1)
**
17.4
TABLE 3: BCT PROPOSED REGULATIONS FOR SEMICONDUCTORS
Pollutant
24-hour
Maximum
(mg/1)
30-day
Average
(mg/1)
pH Range
pH 6-9
TABLE 4: NSPS PROPOSED REGULATIONS FOR SEMICONDUCTORS
Pollutant
Total Toxic Organics *
Fluoride
PH
24-hour
Maximum
(mg/1)
0.47
32
30-day
Average
(mg/1)
**
17.4
pH Range
6-9
* Total Toxic Organics is explained in Section 6.
** The Agency is not proposing 30-day average limits for total
toxic organics for reasons explained in Section 8.
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TABLE 5: PSES and PSNS PROPOSED REGULATIONS FOR
SEMICONDUCTORS
Pollutant
Total Toxic Organics *
24-hour
Maximum
(mg/1)
0.47
30-day
Average
(mg/1)
**
TABLE 6: BPT PROPOSED REGULATIONS FOR ELECTRONIC CRYSTALS
Pollutant
Total Toxic Organics *
Fluoride
Arsenic ***
TSS
PH
2 4 -hour
Maximum
(mg/1)
0.47
32
1.89
61
30-day
Average
(mg/1)
**
17.4
0.68
22.9
pH Range
6-9
TABLE 7
BAT PROPOSED REGULATIONS FOR ELECTRONIC CRYSTALS
Pollutant
Total Toxic Organics *
Fluoride
Arsenic ***
24-hour
Maximum
(mg/1)
0.47
32
1.89
30-day
Average
(mg/1)
**
17.4
0.68
* Total Toxic Organics is explained in Section 6.
** The Agency is not proposing 30-day average limits for total
toxic organics for reasons explained in Section 8.
*** The arsenic limitation applies only to plants manufacturing
gallium or indium arsenide crystals.
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TABLE 8. BCT PROPOSED REGULATIONS FOR
ELECTRONIC CRYSTALS
Pollutant
TSS
PH
24-hour
Maximum
(mg/1)
61.0
30-day
Average
(mg/1)
22.9
pH Range
6-9
TABLE 9. NSPS PROPOSED REGULATIONS FOR
ELECTRONIC CRYSTALS
Pollutant
Total Toxic Organics *
Fluoride
Arsenic ***
TSS
pH
TABLE 10: PSNS
Pollutant
Total Toxic Organics *
Arsenic ***
24-hour
Maximum
(mg/1)
0.47
32
1.89
61.0
30-day
Average
(mg/1) pH Range
**
17.4
0.68
22.9
6-9
AND PSES PROPOSED REGULATIONS FOR
ELECTRONIC
2 4 -hour
Maximum
(mg/1)
0.47
1.89
CRYSTALS
30-day
Average
(mg/1)
**
0.68
* Total Toxic Organics is explained in Section 6.
** The Agency is not proposing 30-day average limits for total
toxic organics for reasons explained in Section 8.
*** The arsenic limitation applies only to plants manufacturing
gallium or indium arsenide crystals.
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SECTION 1
INTRODUCTION
The purpose of this document is to present the findings of the
EPA study of the Electrical and Electronic Components (E&EC)
Point Source Category. The document (1) explains which segments
of the industry are regulated and which are not; (2) discusses
the reasons; and (3) explains how the actual limitations were
developed. Section 1 describes the organization of the document
and reviews the sources of industry data that were used to
provide technical background for the limitations.
1.1 ORGANIZATION AND CONTENT OF THIS DOCUMENT
Industry data are used throughout this report in support of
regulating subcategories or excluding subcategories from
regulation under Paragraph 8 of the NRDC Consent Decree.
Telephone contacts, the literature, and plant visits provided
the information used to subcategorize the industry in Section 3.
These data were also considered in characterizing the industry
in Section 4, Description of the Industry.
Water use and wastewater characteristics in each subcategory are
described in Section 5 in terms of flow, pollutant
concentration, and load. Subcategories to be regulated,
excluded, or deferred are found in Section 6. The discussion in
that section identifies and describes the pollutants to be
regulated or presents the rationale for subcategory exclusion or
deferral. Section 7 describes the technology options available.
The regulatory limits and the bases for these limitations are
presented in Section 8. Section 9 estimates the capital and
operating costs for the treatment technologies used as the basis
for limitations.
1.2 SOURCES' OF INDUSTRY DATA
Data on the E&EC category were gathered from literature studies,
contacts with EPA regional offices, from plant surveys and
evaluations, and through contacting waste treatment equipment
manufacturers. These data sources are discussed below.
Published literature in the form of books, reports, papers,
periodicals, promotional materials, Dunn and Bradstreet surveys,
and Department of Commerce Statistics was examined; the most
informative sources are listed in Section 11, References. The
researched material included product descriptions and uses.
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manufacturing processes, raw materials consumed, waste treatment
technology, and the general characteristics of plants in the
E&EC category, including number of plants, employment levels,
and production.
All 10 EPA offices were telephoned for assistance in identifying
E&EC plants in their respective regions.
were used to supplement available
'information pertaining to facilities in the E&EC category.
First, more than 250 plants were contacted by phone or letter to
obtain basic information regarding products, manufacturing
processes, wastewater generation, and waste treatment. Second,
based on this information, 78 plants were visited to view their
operations and discuss their products, manufacturing processes,
water use, and wastewater treatment. Third, 38 plants were
selected for sampling visits to determine the pollutant
characteristics of their wastewater.
at each plant consisted of up to three days
of sampling. Prior to any sampling visit, all available data,
such as layouts and diagrams of the selected plant's production
processes and waste treatment facilities, were reviewed. In
most cases, a visit to the plant was made prior to the actual
sampling visit to finalize the sampling approach.
Representative sample points were then selected. Finally,
before the visit was conducted, a detailed sampling plan showing
the selected sample points and all pertinent sample data to be
obtained was presented and reviewed.
To more completely characterize each product by the number of
producers, production levels, production processes, in-plant
controls, waste sources and volumes, waste treatment, and waste
disposition, a major survey of each industry was necessary.
Following literature surveys, telephone contacts, and plant
visits, questionnaires for obtaining the above information were
prepared for each product. After review and comments by
selected industry personnel, the questionnaires were mailed to
all known product manufacturers. The results of these surveys
provided the major sources of industrial data presented in this
document.
Various manufacturers of wastewater treatment equipment were
contacted by phone or were visited to obtain cost and
performance data on specific technologies. Information
collected was based both on manufacturers' research and on
actual operation.
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SECTION 2
LEGAL BACKGROUND
2.1 PURPOSE AND AUTHORITY
The Federal Water Pollution Control Act Amendments of 1972
established a comprehensive program to "restore and maintain the
chemical, physical, and biological integrity of the Nation1s
waters," Section 101(a). Section 301(b)(l)(A) set a deadline of
July 1, 1977, for existing industrial dischargers to achieve
"effluent limitations requiring the application of the best
practicable control technology currently available" (BPT).
Section 301(b)(2)(A) set a deadline of July 1, 1983, for these
dischargers to achieve "effluent limitations requiring the
application of the best available technology economically
achievable (BAT), which will result in reasonable further
progress toward the national goal of eliminating the discharge
of all pollutants."
Section 306 required that new industrial direct dischargers
comply with new source performance standards (NSPS), based on
best available demonstrated technology. Sections 307(b) and (c)
of the Act required pretreatment standards for new and existing
dischargers to publicly owned treatment works (POTW). While the
requirements for direct dischargers were to be incorporated into
National Pollutants Discharge Elimination System (NPDES) permits
issued under Section 402, the Act made pretreatment standards
enforceable directly against dischargers to POTWs (indirect
dischargers).
Section 402(a)(l) of the 1972 Act does allow requirements to be
set case-by-case. However, Congress intended control require-
ments to be based, for the most part, on regulations promulgated
by the Administrator of EPA. Section 304(b) required regula-
tions that establish effluent limitations reflecting the ability
of BPT and BAT to reduce effluent discharge. Sections 304(c)
and 306 of the Act required promulgation of regulations for
NSPS. Sections 304(f), 307{b), and 307(c) required regulations
for pretreatment standards. In addition to these regulations for
designated industry categories, Section 307(a) required the
Administrator to promulgate effluent standards applicable to all
dischargers of toxic pollutants.
Finally, Section 501(a) authorized the Administrator to pre-
scribe any additional regulations "necessary to carry out his
functions" under the Act.
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The EPA was unable to promulgate many of these regulations by
the deadlines contained in the Act, and as a result, in 1976,
EPA was sued by several environmental groups. In settling this
lawsuit, EPA and the plaintiffs executed a "Settlement Agree-
ment" which was approved by the Court. This agreement required
EPA to develop a program and meet a schedule for controlling 65
"priority" pollutants and classes of pollutants. In carrying
out this program, EPA must promulgate BAT effluent limitations
guidelines, pretreatment standards, and new source performance
standards for 21 major industries. (See Natural Resources
Defense Council, Inc. v. Train, 8 ERG 2120 (D.D.C. 1976),
modified, 12 ERG 1833(D.D.C. 1979).
Several of the basic elements of the Settlement Agreement
program were incorporated into the Clean Water Act of 1977.
This law made several important changes in the Federal water
pollution control program. Sections 301(b)(2)(A) and
301(b)(2)(C) of the Act now set July 1, 1984, as the deadline
for industries to achieve effluent limitations requiring
application of BAT for "toxic" pollutants. "Toxic " pollutants
here included the 65 "priority" pollutants and classes of
pollutants that Congress declared "toxic" under Section 307(a)
of the Act.
EPA's programs for new source performance standards and
pretreatment standards are now aimed principally at controlling
toxic pollutants. To strengthen the toxics control program.
Section 304(e) of the Act authorizes the Administrator to
prescribe "best management practices" (BMPs). These BMPs are to
prevent the release of toxic and hazardous pollutants from: (1)
plant site runoff, (2) spillage or leaks, (3) sludge or waste
disposal, and (4) drainage from raw material storage if any of
these events are associated with, or ancillary to, the
manufacturing or treatment process.
In keeping with its emphasis on toxic pollutants, the Clean
Water Act of 1977 also revises the control program for non-toxic
pollutants. For "conventional" pollutants identified under
Section 304(a)(4) (including biochemical oxygen demand,
suspended solids, fecal coliform, and pH), the new Section
301(b)(2)(E) requires "effluent limitations requiring the
application of the best conventional pollutant control
technology" (BCT) — instead of BAT — to be achieved by July 1,
1984. The factors considered in assessing BCT for an industry
include the relationship between the cost of attaining a
reduction in effluents and the effluent reduction benefits
attained, and a comparison of the cost and level of reduction of
such pollutants by publicly owned treatment works and industrial
sources. For those pollutants that are neither "toxic"
pollutants nor "conventional" pollutants. Sections 301(b)(2)(A)
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and (b)(2)(F) require achievement of BAT effluent limitations
within three years after their establishment or July 1, 1984,
whichever is later, but not later than July 1, 1987.
The purpose of this proposed regulation is to establish BPT,
BAT, and BCT effluent limitations and NSPS, PSES, and PSNS for
the Electrical and Electronic Components Point Source Category.
2.2 GENERAL CRITERIA FOR EFFLUENT LIMITATIONS
2.2.1 BPT Effluent Limitations
The factors considered in defining best practicable control
technology currently available (BPT) include: (1) the total
cost of applying the technology relative to the effluent
reductions that result, (2) the age of equipment and facilities
involved, (3) the processes used, (4) engineering aspects of the
control technology, (5) process changes, (6) non-water quality
environmental impacts (including energy requirements), (7) and
other factors as the Administrator considers appropriate. In
general, the BPT level represents the average of the best
existing performances of plants within the industry of various
ages, sizes, processes, or other common characteristics. When
existing performance is uniformly inadequate, BPT may be
transferred from a different subcategory or category. BPT
focuses on end-of-process treatment rather than process changes
or internal controls, except when these technologies are common
industry practice.
The cost/benefit inquiry for BPT is a limited balancing,
committed to EPA's discretion, which does not require the Agency
to quantify benefits in monetary terms. See, e.g., American
Iron and Steel Institute v. EPA, 526 F.2d 1027 (3rd Cir. 1975).
In balancing costsagainst the benefits of effluent reduction,
EPA considers the volume and nature of existing discharges, the
volume and nature of discharges expected after application of
BPT, the general environmental effects of the pollutants, and
the cost and economic impacts of the required level of pollution
control. The Act does not require or permit consideration of
water quality problems attributable to particular point sources
or water quality improvements in particular bodies of water.
Therefore, EPA has not considered these factors. See
Weyerhaeuser Company v. Costle, 590 F.2d 1011 (B.C.Cir. 1978);
Appalachian Power Company et al. v. U.S.E.P.A. (D.C. Cir., Feb.
8, 1972).
2.2.2 BAT Effluent Limitations
The factors considered in defining best available technology
economically achievable (BAT) include the age of equipment and
2-3
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facilities involved, the processes used, process changes, and
engineering aspects of the technology process changes, non-water
quality environmental impacts (including energy requirements)
and the costs of applying such technology [(Section 304(b)-
(2)(B)]. At a minimum, the BAT level represents the best
economically achievable performance of plants of various ages,
sizes, processes, or other shared characteristics. As with BPT,
uniformly inadequate performance within a category or
subcategory may require transfer of BAT from a different
subcategory or category. Unlike BPT, however, BAT may include
process changes or internal controls, even when these
technologies are not common industry practice.
The statutory assessment of BAT "considers" costs, but does not
require a balancing of costs against effluent reduction benefits
(see Weyerhaeuser v. Costle, supra). In developing the proposed
BAT, however, EPA has given substantial weight to the
reasonableness of costs. The Agency has considered the volume
and nature of discharges, the volume and nature of discharges
expected after application of BAT, the general environmental
effects of the pollutants, and the costs and economic impacts of
the required pollution control levels. Despite this expanded
consideration of costs, the primary factor for determining BAT
is the effluent reduction capability of the control technology.
The Clean Water Act of 1977 establishes the achievement of BAT
as the principal national means of controlling toxic water
pollution from direct discharging plants.
2.2.3 BCT Effluent Limitations
The 1977 Amendments added Section 301(b)(2)(E) to the Act
establishing "best conventional pollutant control technology"
(BCT) for discharges of conventional pollutants from existing
industrial point sources. Conventional pollutants are those
defined in Section 304(a)(4) [biological oxygen demanding
pollutants (BOD), total suspended solids (TSS), fecal
coliform,and pH], and any additional pollutants defined by the
Administrator as "conventional" [oil and grease, 44 FR 44501,
July 30, 1979].
BCT is not an additional limitation but replaces BAT for the
control of conventional pollutants. In addition to other
factors specified in Section 304(b)(4)(B), the Act requires that
BCT limitations be assessed in light of a two-part "cost
reasonableness" test. American Paper Institute v. EPA, 660 F.2d
954 (4th Cir. 1981). The first test compares the costs for
private industry to reduce its conventional pollutants with the
costs to publicly owned treatment works for similar levels of
reduction in their discharge of these pollutants. The second
test examines the cost-effectiveness of additional industrial
2-4
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treatment beyond BPT. EPA must find that limitations are
"reasonable" under both tests before establishing them as BCT.
In no case may BCT be less stringent than BPT.
2.2.4 New Source Performance Standards
The basis for new source performance standards (NSPS) under
Section 306 of the Act is the best available demonstrated
technology. New plants have the opportunity to design the best
and most efficient processes and wastewater treatment
technologies. Therefore, Congress directed EPA to consider the
best demonstrated process changes, in-plant controls, and
end-of-process treatment technologies that reduce pollution to
the maximum extent feasible.
2.2.5 Pretreatment Standards for Existing Sources
Section 307(b) of the Act requires EPA to promulgate pretreat-
ment standards for existing sources (PSES) which industry must
achieve within three years of promulgation. PSES are designed
to prevent the discharge of pollutants that pass through, inter-
fere with, or are otherwise incompatible with the operation of
POTWs.
The legislative history of the 1977 Act indicates that
pretreatment standards are to be technology-based, analogous to
the best available technology for removal of toxic pollutants.
The General Pretreatment Regulations which serve as the
framework for the proposed pretreatment standards are in 40 CFR
Part 403, 46 FR 9404 (January 28, 1981).
EPA has generally determined that there is passthrough of
pollutants if the percent of pollutants removed by a well-
operated POTW achieving secondary treatment is less than the
percent removed by the BAT model treatment system. A study of
40 well-operated POTWs with biological treatment and meeting
secondary treatment criteria showed that metals are typically
removed at rates varying from 20 percent to 70 percent. POTWs
with only primary treatment have even lower rates of removal.
In contrast, BAT level treatment by the industrial facility can
achieve removal in the area of 97 percent or more. Thus, it is
evident that metals do pass through POTWs. As for toxic
organics, data from the same POTWs illustrate a wide range of
removal, from 0 to greater than 99 percent. Overall, POTWs have
removal rates of toxic organics which are less effective than
BAT.
2*2.6 Pretreatment Standards for New Sources
Section 307(c) of the Act requires EPA to promulgate pretreat-
ment standards for new sources (PSNS) at the same time that it
2-5
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promulgates NSPS. These standards are intended to prevent the
discharge of pollutants which pass through, interfere with, or
are otherwise incompatible with a POTW. New indirect dis-
chargers, like new direct dischargers, have the opportunity to
incorporate the best available demonstrated technologies —
including process changes, in-plant controls, and end-of-process
treatment technologies -- and to select plant sites that ensure
the treatment system will be adequately installed. Therefore,
the Agency sets PSNS after considering the same criteria
considered for NSPS. PSNS will have environmental benefits
similar to those from NSPS.
2-6
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SECTION 3
INDUSTRY SUBCATEGORIZATION
This section explains how the E&EC category was developed,
discusses the rationale for subcategorization, and finally
provides a listing of the E&EC subcategories.
3.1 E&EC CATEGORY DEVELOPMENT
The E&EC category is derived from industries found in the
Standard Industrial Classification (SIC) major group 36,
Electrical and Electronic Machinery, Equipment, and Supplies.
Many of the industries listed under this SIC Code were never
evaluated as part of the E&EC category because EPA initially
concluded that the wastewater discharges from these industries
were primarily associated with the Metal Finishing Category.
3.2 RATIONALE FOR INDUSTRY SUBCATEGORIZATION
After the Agency has obtained analyses of wastewater data and
process information from facilities within a category, the Clean
Water Act requires EPA to consider a number of factors to
determine if subcategorization is appropriate for the purpose of
establishing effluent limitations and standards. These factors
include: raw materials, final products, manufacturing
processes, geographical location, plant size and age, waste-
water characteristics, non-water quality environmental impacts,
treatment costs, energy costs, and solid waste generation.
A review of each of these factors revealed that product type is
the principal factor affecting the wastewater characteristics of
plants within the E&EC category. Product type determines both
the raw and process material requirements, and the number and
type of manufacturing processes used. Plants manufacturing the
same product were found to use the same wet processes and
produce wastewater with similar characteristics. Other factors
affected the wastewater characteristics, but were not adequate
in themselves to be used as bases for subcategorization.
3.3
SUBCATEGORY LISTING
Based on product type (discussed above), EPA established the
following twenty-one (21) subcategories for the E&EC category:
3-1
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Semiconductors
Electronic Crystals
Electron Tubes
Phosphorescent Coatings
Capacitors, Fixed
Capacitors, Fluid Filled
Carbon and Graphite Products
Mica Paper
Incandescent Lamps
Fluorescent Lamps
Fuel Cells
Magnetic Coatings
Resistors
Transformers, Dry
Transformers, Fluid Filled
Insulated Devices, Plastic and Plastic Laminated
Insulated Wire and Cable, Nonferrous
Ferrite Electronic Parts
Motors, Generators, and Alternators
Resistance Heaters
Switchgear
3-2
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SECTION 4
DESCRIPTION OF THE INDUSTRY
This section provides a general description of the subcategories
presented in the previous section. It includes a discussion of
the number of plants and production capacity, product lines, and
manufacturing processes including raw materials used. Industry
descriptions for the regulated subcategories (Semiconductors and
Electronic Crystals) are presented in considerable detail, while
industry descriptions are abbreviated for subcategories which
have been excluded or deferred from regulation.
4.1 SEMICONDUCTORS
4.1.1 Number of Plants and Production Capacity
It is estimated that approximately 257 plants are involved in
the production of semiconductor products. This estimate comes
from an August 1979 listing of plant locations compiled by the
Semiconductor Industry Association. Seventy-seven of the plants
are direct dischargers and one hundred and eighty are indirect
dischargers. The U.S. Department of Commerce 1977 Census of
Manufacturers estimates that 62,000 production employees are
engaged in the manufacture of semiconductor products. Plants
surveyed or visited during this study employ between 30 and 2500
production employees. The majority of plants employ between 150
and 500 production employees, with a typical plant having about
350 employees. Only 9 of the 52 plants in the data base have
more than 500 production employees.
The total number of semiconductor products for the year 1978 was
obtained from the Semiconductor Industry Association. During
that year, 8.844 billion units were produced for a total revenue
of $3.123 billion.
4.1.2 Products
Semiconductors are solid state electrical devices which perform
a variety of functions in electronic circuits. These functions
include information processing and display, power handling, data
storage, signal conditioning, and the interconversion between
light energy and electrical energy. The semiconductors range
from the simple diode, commonly used as an alternating current
rectifier, to the integrated circuit which may have the
equivalent of 250,000 active components in a 0.635 cm (1/4 inch)
square.
4-1
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Semiconductors are used throughout the electronics industry.
The major semiconductor products are:
o Silicon based integrated circuits which include bi-
polar, MOS (metal oxide silicon), and digital and
analog devices. Integrated circuits are used in a
wide variety of commercial and consumer electronic
equipment, calculators, electronic games and toys,
and medical equipment.
o Light emitting diodes (LED) which are produced from
gallium arsenide and gallium phosphide wafers. These
devices are commonly used as information displays in
electronic games, watches, and calculators.
o Diodes and transistors which are produced from silicon
or germanium wafers. These devices are used as active
components in electronic circuits which rectify,
amplify, or condition electrical signals.
o Liquid crystal display (LCD) devices which are pro-
duced from liquid crystals. These devices are prim-
arily used for information displays as an alternative
to LEDs.
4.1.3 Manufacturing Processes and Materials
The manufacturing processes and materials used for semicon-
ductor production are described in the following paragraphs.
Each type of semiconductor with its associated manufacturing
operations is discussed separately because production processes
differ depending on the basis material.
________ (Figure 4-1 on page 4-3).
tese circuits require high purity single crystal silicon as a
basis material. Most of the companies involved in silicon-based
integrated circuit production purchase single crystal silicon
ingots (cylindrical crystals which can be sliced into wafers),
slices, or wafers from outside sources rather than grow their
own crystals.
When the ingot is received it is sliced into round wafers ap-
proximately 0.76mm (0.030 inches) thick. These slices are then
lapped or polished by means of a mechanical grinding machine or
are chemically etched to provide a smooth surface and remove
surface oxides and contaminants. Commonly used etch solutions
are hydrofluoric acid or hydrofluoric-nitric acid mixtures. The
presence of hydrofluoric acid is generally necessary because of
the solubility characteristics of silicon and silicon oxide.
Other acids such as sulfuric or nitric may be used depending on
4-2
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SINGLE CRYSTAL
SILICON INGOT
SLICING
INTO WAFERS
LAPPING
SILICON OR
SILICON COMPOUND
DEPOSITION
I I
WASTE WATER WASTEWATER
THIS SEQUENCE MAY BE
REPEATED 2 TO 20 TIMES
I
•ts.
1
U)
ACID OR 01 WATER
SOLVENT RINSE ^ uurini, ^ H1NS|_
) 1
SPENT ACIO WASTEWATER
OR SOLVENT
METAL
*" DEPOSITION ^
1
H
DEVELOPING
_ UV LIGHT ^ APPLICATION ^
** EXPOSURE "^ OF PHOTORESIST "^
SPENT ACID
SSIVATION
DICING
INTO CHIPS
ASSEMBLY
WASTEWATER
FIGURE 41. SILICON INTEGRATED CIRCUIT PRODUCTION
-------
the nature of the material to be removed. Wastewater results
from cooling the diamond tipped saws used for slicing, from
spent etch solution, and from deionized (DI) water rinses
following chemical etching and milling operations.
The next step in the process depends on the type of integrated
circuit device being produced, but commonly involves the
deposition or growth of a layer or layers of silicon dioxide,
silicon nitride, or epitaxial silicon. For example, a silicon
dioxide layer is commonly applied to bipolar devices, and an
initial layer of silicon dioxide with the subsequent deposition
of a silicon nitride layer is commonly applied to MOS devices.
The wafer is then coated with a photoresist, a photosensitive
emulsion. The wafer is next exposed to ultraviolet light using
glass photomasks that allow the light to strike only selected
areas. After exposure to ultraviolet light, unexposed resist is
removed from the wafer, usually in a DI water rinse. This
allows selective etching of the wafer. The wafer is then
visually inspected under a microscope and etched in a solution
containing hydrofluoric acid (HF). The etchant produces
depressions, called holes or windows, where the diffusion of
dopants later occurs. Dopants are impurities such as boron,
phosphorus and other specific metals. These impurities
eventually form circuits through which electrical impulses can
be transmitted. The wafer is then rinsed in an acid or solvent
solution to remove the remainder of the hardened photoresist
material.
Diffusion of dopants is generally a vapor phase process in which
the dopant, in the form of a gas, is injected into a furnace
containing the wafers. Gaseous phosphine and boron trifluoride
are common sources for phosphorus and boron dopants, respect-
ively. The gaseous compound breaks down into elemental phos-
phorus or boron on the hot wafer surface. Continued heating of
the wafer allows diffusion of the dopant into the surface
through the windows at controlled depths to form the electrical
pathways within the wafer. Solid forms of the dopant may also
be used. For example, boron oxide wafers can be introduced into
the furnace in close proximity to the silicon wafers. The boron
oxide sublimes and deposits boron on the surface of the wafer by
condensation and then diffuses into the wafer upon continued
heating.
Then a second oxide layer is grown on the wafer, and the process
is repeated. This photolithographic-etching-diffusion-oxide
process sequence may occur a number of times depending upon the
application of the semiconductor.
During the photolithographic-etching-diffusion-oxide processes,
the wafer may be cleaned many times in mild acid or alkali
4-4
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solutions followed toy DI water rinses and solvent drying with
acetone or isopropyl alcohol. This is necessary to maintain
wafer cleanliness.
After the diffusion processes are completed, a layer of metal is
deposited onto the surface of the wafer to provide contact
points for final assembly. The metals used for this purpose
include aluminum, copper, chromium, gold, nickel, platinum, and
silver. The processes associated with the application of the
metal layer are covered by regulations for the Metal Finishing
Category. One of the following three processes is used to
deposit this metal layer:
o Sputtering —
In this process the source metal and the target wafer
are electrically charged, as the cathode and anode,
respectively, in a partially evacuated chamber. The
electric field ionizes the gas in the chamber and
these ions bombard the source metal cathode, ejecting
metal which deposits on the wafer surface.
o Vacuum Deposition —
In this process the source metal is heated in a high
vacuum chamber by resistance or electron beam heating
to the vaporization temperature. The vaporized metal
condenses on the surface of the silicon wafer.
o Electroplating —
In this process the source metal is electrochemically
deposited on the target wafer by immersion in an
electroplating solution and the application of an
electrical current.
Finally, the wafer receives a protective oxide layer (passiva-
tion) coating before being back lapped to produce a wafer of the
desired thickness. Then the individual chips are diced from the
wafer and are assembled in lead frames for use. Many companies
involved in semiconductor production send completed wafers to
overseas facilities where dicing and assembly operations are
less costly as a result of the amount of hand labor necessary to
inspect and assemble finished products.
Light Emitting Diodes (LEDs) — LEDs are produced from single
crystal gallium arsenide or gallium phosphide wafers. These
wafers are purchased from crystal growers and upon receipt are
placed in a furnace where a silicon nitride layer is grown on
the wafer. The wafer then receives a thin layer of photoresist,
is exposed through a photomask, and is developed with a
xylene-based developer. Following this, the wafer is etched
using hydrofluoric acid or a plasma-gaseous-etch process, rinsed
4-5
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in DI water, and then stripped of resist. The wafer is again
rinsed in DI water before a dopant is diffused into the surface
of the wafer. A metal oxide covering is applied next, and then
a photoresist is applied. The wafer is then masked, etched in a
solution of aurostrip (a cyanide-containing chemical commonly
used in gold stripping), and rinsed in DI water. The desired
thickness is produced by backlapping and a layer of metal,
usually gold, is sputtered onto the back of the wafer to provide
electrical contacts. Testing and assembly complete the
production process.
Diodes and Transistors — Diodes and transistors are produced
from single crystal silicon or germanium wafers. These devices,
called discrete devices, are manufactured on a large scale, and
their use is mainly in older or less sophisticated equipment
designs, although discrete devices still play an important role
in high power switching and amplification.
The single crystal wafer is cleaned in an acid or alkali solu-
tion, rinsed in DI water, and coated with a layer of photo-
resist. The wafer is then exposed and etched in a hydrofluoric
acid solution. This is followed by rinsing in DI water, drying,
and doping in diffusion furnaces where boron or phosphorus are
diffused into specific areas on the surface of the wafer. The
wafers are then diced into individual chips and sent to the
assembly area. In the assembly area electrical contacts are
attached to the appropriate areas and the device is sealed in
rubber, glass, plastic, or ceramic material. Extra wires are
attached and the device is inspected and prepared for shipment.
— A typical LCD
"opticallyTlat glass that is cut
The squares are then cleaned in a
production nne begu
into four-inch squares.
solution containing ammonium hydroxide, immersed in a mild
alkaline stripping solution, and rinsed in DI water. The plates
are spun dry and sent to the photolithography area for further
processing.
In the photolithographic process a photoresist mask is applied
with a roller, and the square is exposed and developed. This
square then goes through deionized water rinses and is dried,
inspected, etched in an acid solution, and rinsed in DI water.
A solvent drying step is followed by another alkaline stripping
solution. The square then goes through DI water rinses, is spun
dry, and is inspected.
The next step of the LCD production process is passivation. A
silicon oxide layer is deposited on the glass by using liquid
silicon dioxide, or by using silane and oxygen gas with
phosphine gas as a dopant. This layer is used to keep harmful
4-6
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sodium ions on the glass away from the surface where they could
alter the electronic characteristics of the device. Several
production steps may occur here if it is necessary to rework the
piece. These include immersion in an ammonium bifluoride bath
to strip silicon oxide from a defective piece followed by DI
water rinses and a spin dry step. The glass is then returned to
the passivation area for reprocessing.
After passivation, the glass is screen printed with devitrified
liquid glass in a matrix. Subsequent baking causes the de-
vitrified glass to become vitrified, and the squares are cut
into the patterns outlined by the vitrified glass boundaries.
The saws used to cut the glass employ contact cooling water
which is filtered and discharged to the waste treatment system.
The glass is then cleaned in an alkaline solution and rinsed in
deionized water. Following inspection, a layer of silicon oxide
is evaporated onto the surface to provide alignment for the
liquid crystal. The two mirror-image pieces of glass are
aligned and heated in a furnace, bonding the vitrified glass and
creating a space between the two pieces of glass. This glass
assembly is immersed in the liquid crystal solution in a vacuum
chamber, air is evacuated, and the liquid crystal is forced into
the space between the glass pieces. The glass is then sealed
with epoxy, vapor-degreased in a solvent, shaped on a diamond
wheel, inspected, and sent to assembly.
4.2 ELECTRONIC CRYSTALS
4.2.1 Number of Plants
Table 4-1 on page 4-8 presents an estimate of the number of
producers of each type of crystal. Of plants manufacturing
crystals at seventy sites, six are direct dischargers and
sixty-four are indirect dischargers. The last fifteen years
have seen an extremely rapid evolution of electronic technology.
A major part of that evolution has been the development of
single crystals with unique structural and electronic properties
which serve as essential parts of most microelectronic devices.
The production and use of gallium based crystals are expected to
have a particularly rapid growth over the next decade. Gallium
based crystals have certain advantages over silicon based
crystals for semiconductor applications with respect to circuit
speed, power consumption, and higher temperature capabilities.
Consequently the crystals industry has served an expanding
market with an ever-increasing list of products. Companies
comprising the industry include not only those long-established,
but also a large proportion founded comparatively recently by
entrepreneurs. Of this latter group some companies have grown
considerably, while others are very small. This growth in the
number of companies is expected to continue.
4-7
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TABLE 4-1
PROFILE OF ELECTRONIC CRYSTALS INDUSTRY
Product
Estimated
No. of
Producers'^*
Product
Estimated
No. of
Producers'^'
Piezoelectric
Crystals :
Quartz
Ceramics (2)
YIG
YAG
Lithium Niobate
Liquid Crystals
40
8
3
2
3
2
Semi-conducting
Crystals :
Silicon
Gallium arsenide
Gallium phosphide
Sapphire
GGG
Indium arsenide
Indium antimonide
Bismuth telluride
8
8
8
1
3
1
1
1
j1'Several producers manufacture more than one product.
'2)Ceramics include lead zirconate, ammonium hydrogen
phosphate, potassium hydrogen phosphate and lead zirconium
titanate.
4-8
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4.2.2 Products
Based on their properties and thus their uses in the industry,
electronic crystals can be divided into three types:
piezoelectric, semiconducting, and liquid crystals.
Piezoelectric Crystals —- Piezoelectric crystals are transducers
which interconvert electrical voltage and mechanical force.
There are three principal types: quartz, ceramic, and
yttrium-iron-garnet (YIG), and some other less common types.
Quartz crystals are the most widely used of the piezoelectric
crystals, with applications as timing devices in watches,
clocks, and record players? freqency controllers, modulators,
and demodulators in oscillators; and filters. Some quartz is
mined, but the main supply comes from synthesized material
produced by about forty companies in the United States.
Ceramic crystals are basically fired mixtures of the oxides of
lead, zirconium, and titanium. They are used in transducers,
oscillators,ultrasonic cleaners, phonograph cartridges, gas
igniters, audible alarms, keyboard switches, and medical
electronic equipment.
YIG crystals are made by the slow crystal growth of a melt of
yttrium oxide, iron oxide, and lead oxide. Their primary use is
in the microwave industry for low frequency applications as in
sonar. Their incorporation into microwave circuits makes wide-
band tuning possible.
Other potentially useful peizoelectric crystals being developed
or manufactured on a small scale include lithium niobate,
bismuth germanium oxide, and yttrium-aluminum-garnet (YAG).
Semiconducting Crystals -5- Semiconducting crystals have
properties intermediate between a conductor and an insulator,
thus allowing for a wide range of applications in the field of
microelectronics. In conductors, current is carried by
electrons that travel freely throughout the atomic lattice of
the substance. In insulators the electrons are tightly bound
and are therefore unavailable to serve as carriers of electric
current. Semiconductors do not ordinarily contain free charge
carriers but generate them with a modest expenditure of energy.
Silicon crystals are widely used in the manufacture of micro-
electronic chips: transistors, diodes, rectifiers, other cir-
cuit elements, and solar cells. Crystals of pure silicon are
poor conductors of electricity. In order to make them better
conductors, controlled amounts of impurity atoms are introduced
into the crystal by a process called doping.
4-9
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When silicon is doped with an element whose atoms contain more
or fewer valence electrons than silicon, free electrons or
electron "holes" are thus available to be mobilized when a
voltage is applied to the crystal. Phosphorus and boron are
common dopants used in silicon crystals.
Gallium arsenide and gallium phosphide crystals were developed
under the need for a transistor material with good high tempera-
ture properties. These crystals exhibit low field electron
mobility, and are therefore useful at high frequencies, in such
devices as the field effect transistor (FET). The technology of
manufacturing high performance gallium arsenide FET's is
maturing at a rapid rate and the devices are experiencing a
greatly expanding role in oscillators, power amplifiers, and low
noise/high gain applications.
Most gallium arsenide/phosphide is presently being used for
production of light emitting diodes (LEDs) which can convert
electric energy into visible electromagnetic radiation. The
interconversion of light energy and voltage in gallium arsenide
is reversible. Hence this material is also undergoing intensive
development as a solar cell, in which sunlight is converted
directly to electricity.
Indium arsenide and indium antimonide crystals, formed by direct
combination of the elements, are used as components of power
measuring devices. These crystals are uniquely suited to this
function because they demonstrate a phenomenon known as the Hall
Effect, the development of a transverse electric field in a
current-carrying conductor placed in a magnetic field.
Bismuth telluride crystals demonstrate a phenomenon known as
thermoelectric cooling because of the Peltier Effect. When a
current passes across a junction of dissimilar metals, one side
is cooled and the other side heated. If the cold side of the
junction is attached to a heat source, heat will be carried away
to a place where it can be conveniently dissipated. Devices
utilizing this effect are used to cool small components of
electrical circuits.
Sapphire crystals are used by the semiconductor industry as
single crystal wafers which act as inactive substrates for an
epitaxial film of silicon, that is, substrates upon which a thin
layer of silicon is deposited in a single-crystal configuration.
This is referred to as silicon on sapphire (SOS). In addition
to being a dielectric material, single crystal sapphire exhibits
a combination of optical and physical properties which make it
ideal for a variety of demanding optical applications.
Sapphire, the hardest of the oxide crystals, maintains its
strength at high temperatures, has good thermal and excellent
4-10
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electrical properties and is chemically inert. Therefore, it
can be used in hostile environments when optical transmission
ranging from vacuum ultraviolet to near infrared is required.
Sapphire crystals have found application in semiconductor
substrates, infrared detector cell windows, UV windows and
optics, high power laser optics, and ultracentrifuge cell
windows.
Gallium Gadolinium Garnet (GGG) is the most suitable substrate
for magnetic garnet films because of its excellent chemical,
mechanical, and thermal stability, nearly perfect material and
surface quality, crystalline structure, and the commercial
availability of large diameter substrates. GGG is the standard
substrate material used for epitaxial growth of single crystal
iron garnet films which are used in magnetic bubble domain
technology.
Liquid-Crystals — Liquid crystals are organic compounds or mix-
tures of two or more organic compounds which exhibit properties
of fluidity and molecular order simultaneously over a small
temperature range. An electric field can disrupt the orderly
arrangement of liquid crystal molecules, changing the refractive
properties. This darkens the liquid enough to form visible
characters in a display assembly, even though no light is
generated. This affect is achieved by application of a voltage
and does not require a current flow. Therefore minimal use of
power is required, allowing the display in battery operated
devices to be activated continuously. Liquid crystals are used
in liquid crystal display (LCD) devices for wrist watches,
calculators and other consumer products requiring a low power
display.
4.2.3 .Manufacturing Processes and Materials
Piezoelectric Crystals -- The following is a description of the
manufacturing processes used for growth and fabrication of the
three major piezoelectric crystal types: quartz, ceramic, and
yttrium-iron-garnet (YIG).
Quartz Crystals:
The growth of quartz crystals is a hydrothermal process carried
out in an autoclave under high temperature and pressure. The
vessel is typically filled to 80 percent of the free volume with
a solution of sodium hydroxide or sodium carbonate. Particles
of ct-quartz nutrient are placed in the lower portion of the
vessel where they are dissolved. The quartz is then transferred
by convection currents through the solution and deposited on
seed crystals which are suspended in the upper portion of the
vessel. Seeds are thin wafers or spears of quartz about six
inches long. A vessel normally contains 20 seeds. Nutrient
4-11
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quartz will dissolve and deposit onto the seed crystals because
a small temperature gradient exists between the lower and upper
portion of the autoclave, promoting the migration of quartz to
the upper portion of the vessel. Upon completion of the growth
cycle (45 to 60 days), crystals are removed and cleaned for the
fabrication process.
The quartz crystals are cut or sliced using diamond blade saws
or slurry saws. Diamond blade saws are used when one wafer at a
time is cut. Slurry saws are utilized in mass production lines
for cutting many wafers at a time. The crystal wafers are then
lapped to the desired thickness. After lapping, the crystal is
usually etched with hydrofluoric acid or ammonium bifluoride and
subsequently rinsed with water. Crystal edges are then beveled
using either a dry grinding grit or a water slurry. Following
this, metals are deposited on the crystal by vacuum deposition.
The crystal wafers are mounted on a masking plate and placed in
an evacuated bell jar. Metal strips in the jar are vaporized,
coating the unmasked area of the wafer. The metal coating
(gold, silver, or aluminum are often used) functions as the
crystal's conducting base. The metal coating operation is
covered by regulations for the Metal Finishing Category. During
fine tune deposition, the crystal is allowed to resonate at a
specified frequency and another thin layer of metal is deposited
on it. Wire leads are attached to the crystal and it is sealed
in a nitrogen atmosphere. At this point the crystal is ready
for sale or insertion into an electronic circuit. Figure 4-2 on
page 4-13 presents a diagram of the process indicating major
waste generating operations.
Ceramic Crystals:
Ceramic crystal production begins by mixing lead oxide,
zirconium oxide and titanium oxide powders plus small amounts of
dopants to achieve desired specifications in the final product.
The powders are mixed with water to obtain uniform blending,
then filtration takes place and the waste slurry is sent to
disposal. This mixture is roasted, ground wet, and blended with
a binder (polyvinyl alcohol) in a tank called a blundger. The
mixture is then spray dried, pressed, and fired to drive off the
binder, which is not recovered. Formed crystals are enclosed in
alumina and refired. After this final firing crystals are
polished, lapped, and sliced as in quartz production.
Electrodes, usually made of silver, are then attached to the
crystals. Approximately ten percent of the crystals have
electrodes deposited by electroless nickel plating. This
plating operation is covered by regulations for the Metal
Finishing Category. Poling, the final process step, gives the
crystal its piezoelectric properties. This step is performed
with the crystal immersed in a mineral oil bath. Some companies
sell the used mineral oil to reclaimers. After poling the
4-12
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PROCESS FOR:
QUARTZ CRYSTALS
PRO CESS FOR:
SILICON, GALLIUM ARSENIDE, AND
GALLIUM PHOSPHIDE CRYSTALS
ABRASIVE SLURRY WASTE ^
(WATER AND OIL BASED)
WATER + FLOURIOE + ACID «•
HEAT PROCESS -
FORMATION OF
SINGLE CRYSTALS
1
METAL VACUUM
DEPOSITION AND
FINE TUNING
1
CONNECTING
ELECTRODES
MIXING INGREDIENTS
(Ga + Asl OR FORMING
ELEMENTAL Si FROM
TRICHLOROSILANE
CZOCHRALSKI
PROCESS
•
ABRASIVE SLURRY WASTE
(WATER AND OIL BASED);
POWDER FROM CRYSTAL
MATERIAL
ALUMINA + ETHYLENE
GLYCOL ABRASANT
VARIOUS ACIDS.
BASES, SOLVENTS
FIGURE 4-2. BASIC MANUFACTURING PROCESSES FOR ELECTRONIC CRYSTALS
4-13
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crystal is ready for sale and use. Ceramic crystal production
is very small.
Yttrium-Iron-Garnet (YIG) Crystals:
The production of YIG crystals involves the melting of metal
compounds to form large single crystals which are processed to
yield minute YIG spheres for use in microwave devices. Yttrium
oxide, iron oxide and lead oxide powders are mixed, placed in a
platinum crucible and melted in a furnace. After the melt
equilibrates at this temperature the furnace is cooled, the slag
is poured off, leaving the YIG crystals attached to the
crucible. This growth process takes approximately 28 days. The
crucible is soaked in hydrochloric and nitric acid to remove the
crystals which are then sliced by a diamond blade saw to form
cubes 0.04 inches on a side. These cubes are placed in a
rounding machine, and the rounding process is followed by
polishing to obtain perfectly spherical crystals for use in a
microwave device.
The production of YIG and ceramic crystals with piezoelectric
properties constitutes a minor portion of the piezoelectric
crystal industry. The entire YIG production for the USA is less
than fifteen pounds per year.
Semiconducting Crystals -- Several methods are currently in use
for the production of semiconducting single crystals. An
important method, the Czochralski, functions by lowering a seed
crystal (a small single crystal) into a molten pool of the
crystal material and raising the seed slowly (over a period of
days) with constant slow rotation. Because the temperature of
the melt is just above the melting point, material solidifies
onto the seed crystal, maintaining the same crystal lattice.
Crystals up to 6 inches in diameter and 4 feet long can be grown
by this method. The Czochralski method is used to grow silicon,
sapphire, GGG, and gallium arsenide.
Another method, called the Chalmers method,is used by some manu-
facturers to grow gallium arsenide crystals. If the molten
material is contained in a horizontal boat and cooled slowly
from one end, a solid/liquid interface will pass through the
melt. Under controlled conditions or with the use of a seed
crystal the solid will form as a single crystal.
Silicon Crystals:
The raw material used to produce silicon crystals is polycrys-
talline silicon. Reduction of purified trichlorosilane with
hydrogen is the usual method for producing the high purity
polycrystalline ("poly") silicon. Single crystals of silicon
are then grown by the Czochralski method, the most common
crystal growing technique for semiconductor crystals.
4-14
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After a crystal has been grown, the outside diameter is ground
to produce a crystalline rod of constant diameter. The ends are
cut off and used to evaluate the quality of the crystal. At the
same time, its orientation is determined and a flat is ground
the length of the rod to fix its position. Rods are then sliced
into wafers. Silicon dust and cutting oils mixed with water are
waste products of the grinding and cutting operations.
Lapping is a machining operation using an alumina and ethylene
glycol abrasive medium which produces a flat polished surface
and reduces the thickness of the wafers. After lapping, the
wafers are polished using a hydrated silica medium. The final
cleaning is done with various acids, bases and solvents.
Sapphire and GGG Crystals:
To produce sapphire and gallium gadolinium garnet (GGG) crystals
a raw material called crackle, (high purity alumina waste from a
European gem crystal growing process) is melted in an iridium
crucible. Sapphire is pure alumina. Gadolinium oxide and
gallium oxide powders are added to the crucible if GGG is the
desired product. These are melted using an induction furnace
under a nitrogen atmosphere with a trace of oxygen added.
Crystals are pulled from the melt using the Czochralski method.
These crystals are annealed in oxygen-gas furnaces after growth
in order to remove internal stress and make the crystalline rods
less brittle. Sapphire and GGG rods are ground and sliced using
diamond abrasives and a coolant consisting of a mixture of oil
and water. Wafers are lapped using a diamond abrasive compound
and lubricants, and are polished with a colloidal silica slurry.
GGG wafers are coated with a thin film using liquid-phase
epitaxy. The film has small permanent magnetic domains, which
make it useful for "magnetic bubble" memory devices. The
sapphire wafers are coated with a layer of epitaxial silicon to
produce the SOS substrates for microelectronic chip manufacture.
Other Semiconducting Crystals:
The formation of gallium arsenide, gallium phosphide, and indium
bismuth telluride takes place by a chemical reaction which
occurs in an enclosed capsule. When gallium arsenide or
phosphide crystals are produced, the gallium, on one side of the
capsule, is heated to more than 1200°C. The arsenic or
phosphorus on the other side of the capsule is heated separately
until it vaporizes. The vapor and hot metsl react to form a
molten compound. (In the case of phosphorus, high pressure is
required.) The molten compound can then be crystallized in situ
by the Chalmers technique or cooled and crystallized by the
Czochralski method. These crystals undergo the fabrication
operations mentioned earlier.
4-15
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To produce indium antimonide, indium arsenide and bismuth tellu-
ride, the elements are mixed together, melted to form the com-
pound and frozen into a polycrystalline ingot. These materials
are used in a polycrystalline state so no crystal growing step
occurs. The ingot is fabricated into wafers by normal machining
operations. Because these materials are relatively soft,
carbide abrasives with water cooling are sufficient for
machining the ingots. The wafers are milled into small pieces
and incorporated into electronic components.
Liquid Crystals — Liquid crystals are produced by organic
synthesis. Precursor organic compounds are mixed together and
heated until the reacton is complete. The reacted mass is
dissolved in an organic solvent such as toluene, and is
crystallized and recrystallized several times to obtain a
product of the desired purity. Several of these organic
compounds are then mixed to form a eutectic mixture with the
correct balance of properties for LCD application.
4.3 ELECTRON TUBES
Electron tubes are devices in which' electrons or ions are con-
ducted between electrodes through a vacuum or ionized gas within
a gas-tight envelope which may be glass, quartz, ceramic, or
metal. A large variety of electron tubes are manufactured,
including klystrons, magnetrons, cross field amplifiers, and
modulators. These products are used in aircraft and missile
guidance systems, weather radar, and specialized industrial
applications. The Electron Tube subcategory also includes
cathode-ray tubes and T.V. picture tubes that transform
electrical current into visual images. Cathode-ray tubes
generate images by focusing electrons onto a luminescent screen
in a pattern controlled by the electrical field applied to the
tube. In T.V. picture tubes, a stream of high-velocity
electrons scans a luminescent screen. Variations in the
electrical impulses applied to the tube cause changes in the
intensity of the electron stream and generate the image on the
screen.
Processes involved in the manufacture of electron tubes include
degreasing of components; application of photoresist, graphite,
and phosphors to glass panels? and sometimes electroplating
operations including etching and machining. The application of
phosphors is unique to T.V. picture tubes and other cathode-ray
tubes. The phosphor materials may include sulphides of cadmium
and zinc and yttrium and europium oxides. The electroplating
operations are covered under the Metal Finishing Category. Raw
materials can include copper and steel as basis materials, and
copper, nickel, silver, gold, rhodium and chromium to be
electroplated. Phosphors, graphite, and protective coatings
4-16
-------
containing toluene or silicates and solders of lead oxide may
also be used. Process chemicals may include hydrofluoric,
hydrochloric, sulfuric, and nitric acids for cleaning and
conditioning of metal parts; and solvents such as methylene
chloride, trichloroethylene, methanol, acetone, and polyvinyl
alcohol.
4.4 PHOSPHORESCENT COATINGS
Phosphorescent coatings are coatings of certain chemicals, such
as calcium halophosphate and activated zinc sulfide, which emit
light. Phosphorescent coatings are used for a variety of
applications, including fluorescent lamps, high-pressure mercury
vapor lamps, cathode ray and television tubes, lasers,
instrument panels, postage stamps, laundry whiteners, and
specialty paints. This study is restricted to those coatings
which are applicable to the E&EC category, specifically to those
used in fluorescent lamps and television picture tubes. The
most important fluorescent lamp coating is calcium halophosphate
phosphor. The intermediate powders are calcium phosphate and
calcium fluoride. There are three T.V. powders: red, blue, and
green. The red phosphor is yttrium oxide activated with
europium; the blue phosphor is zinc sulfide activated with
silver, and the green phosphor is zinc-cadmium sulfide activated
with copper. The major process steps in producing phosphor-
escent coatings are reacting, milling, and firing the raw
materials; recrystallizing raw materials, if necessary; and
washing, filtering, and drying the intermediate and final
products.
4.5 CAPACITORS, FIXED
The primary function of capacitors is to store electrical
energy. Fixed capacitors are layered structures of conductive
and dielectric materials. The layering of fixed capacitors is
either in the form of rigid plates or in the form of thin sheets
of flexible material which are rolled. Typical capacitor appli-
cations are energy storage elements, protective devices, filter-
ing devices, and bypass devices. Some typical processes in
manufacturing fixed capacitors are anode fabrication, formation
reactions, dipping, layering, cathode preparation, welding, and
electrical evaluation. All manufacturing processes are covered
under the Metal Finishing category by unit operation. Fixed
capacitor types are distinguished from each other by type of
conducting material, dielectric material, and encapsulating
material.
4.6 CAPACITORS, FLUID FILLED
As with fixed capacitors, the primary function of fluid-filled
capacitors is to store electrical energy. Wet capactitors
4-17
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contain a fluid dielectric that separates the anode (in the
center of the device) from the cathode (the capacitor shell),
which also serves to contain the fluid. Fluid-filled capacitors
are used for industrial applications as electrical storage,
filtering, and circuit protection devices. Some typical
processes in manufacturing fluid-filled capacitors are anode
fabrication, formation reactions, metal can preparation,
dielectric addition, soldering, and electrical evaluation. All
manufacturing processes are covered under the Metal Finishing
category by unit operation.
4.7 CARBON AND GRAPHITE PRODUCTS
Carbon and graphite (elemental carbon in amorphous crystalline
form) products exhibit unique electrical, thermal, physical, and
nuclear properties. The major carbon and graphite product areas
are (1) carbon electrodes for aluminum smelting and graphite
furnace electrodes for steel production, (2) graphite molds and
crucibles for metallurgical applications, (3) graphite anodes
for electrolytic cells used for production of such materials
as caustic soda, chlorine, potash, and sodium chlorate, (4)
non-electrical uses such as structural, refractory, and nuclear
applications, (5) carbon and graphite brushes, contacts, and
other products for electrical applications, and (6) carbon and
graphite specialties such as jigs, fixtures, battery carbons,
seals, rings, and rods for electric arc lighting, welding, and
metal coating. The production process starts with weighing the
required quantities of calcined carbon filler, binders, and
additives; combining them as a batch in a heated mixer; and then
forming the resulting "green" mixture by compression molding or
by extrusion. Green bodies are carefully packed and baked for
several weeks. After baking, the items are machined into final
shape.
4.8 MICA PAPER
Mica paper is a dielectric (non-conducting) material used in the
manufacture of fixed capacitors. Mica paper is manufactured in
the following manner: Mica is heated in a kiln and then placed
in a grinder where water is added. The resulting slurry is
passed to a double screen separator where undersized and
oversized particles are separated. The screened slurry flows to
a mixing pit and then to a vortex cleaner. The properly-sized
slurry is processed in a paper-making machine where excess water
is drained or evaporated. The resulting cast sheet of mica
paper is fed on a continuous roller to a radiant heat drying
oven, where it is cured. From there, the mica paper is wound
onto rolls, inspected, and shipped.
4-18
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4.9 INCANDESCENT LAMPS
An incandescent lamp is an electrical device that emits light.
Incandescent tungsten filament lamps operate by passage of an
electric current through a conductor (the filament). Heat is
produced in this process, and light is emitted if the temper-
ature reaches approximately 500°C. Most lamp-making operations
are highly automated. The mount machine assembles a glass
flare, an exhaust tube, lead-in wires, and molybdenum filament
support. A glass bulb is electrostatically coated with silica
and the bulb and mount are connected at the exhaust and seal
machine. The bulb assembly is annealed, exhausted, filled with
an inert gas, and sealed with a natural gas flame. The
finishing machine solders the lead wires to the metallic base
which is then attached to the bulb assembly by a phenolic resin
cement or by a mechanical crimping operation. The finished lamp
is aged and tested by illuminating it with excess current for a
period of time to stabilize its electrical characteristics.
4.10 FLUORESCENT LAMPS
A fluorescent lamp is an electrical device that emits light by
electrical excitation of phosphors that are coated on the inside
surface of the lamp. Fluorescent lamps utilize a low pressure
mercury arc in argon. Through this process, the lowest excited
state of mercury efficiently produces short wave ultraviolet
radiation at 2,537 Angstroms. Phosphor materials that are
commonly used are calcium halophosphate and magnesium tungstate,
which absorb the ultraviolet photons into their crystalline
structure and re-emit them as visible white light.
There are two types of fluorescent lamps: hot cathode and cold
cathode. Cold cathode manufacture is primarily an
electroplating operation. Hot cathode fluorescent lamp
manufacturing is a highly automated process. Glass tubing is
rinsed with deionized water and gravity-coated with phosphor.
Coiled tungsten filaments are assembled together with lead
wires, an exhaust tube, a glass flare, and a starting device to
produce a mount assembly. The mount assemblies are heat pressed
to the two ends of the glass tubing. The glass tubes are
exhausted and filled with an inert gas. The lead wires are
soldered to the base and the base is attached to the tube ends.
The finished lamp receives a silicone coating solution. The
lamp is then aged and tested before shipment.
4.11 FUEL CELLS
Fuel cells are electrochemical generators in which the chemical
energy from a reaction of air (oxygen) and a conventional fuel
is converted directly into electricity. The major fuel cell
4-19
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products/ basically in research and development stages, are:
(1) fuel cells for military applications, (2) fuel cells for
power supply to vehicles, (3) fuel cells used as high power
sources, and (4) low temperature and low pressure fuel cells
with carbon electrodes. Some typical processes in the manu-
facture of fuel cells are extrusion or machining, heat treating,
sintering, molding, testing, and assembling. Some typical raw
materials are base carbon or graphite, plastics, resins, and
Teflon.
4.12 MAGNETIC COATINGS
Magnetic coatings are applied to tapes to allow the recording of
information. Magnetic tapes are used primarily for audio,
video, computer, and instrument recording. The process begins
with milling to create sub-micron magnetic particles. Ferric
oxide particles are used almost exclusively with trace additions
of other particles or alloys for specific applications. The
particles are mixed, through several steps, with a variety of
solvents, resins, and other additives. The coating mix is then
applied to a flexible tape or film material (for example,
cellulose acetate). After the coating mix is applied, particles
are magnetically oriented by passing the tape through a magnetic
field, and the tape is dried and slit for testing and sale.
4.13 RESISTORS
Resistors are devices commonly used as components of electric
circuits to limit current flow or to provide a voltage drop.
Resistors are used for television, radios, and other
applications. Resistors can be made from various materials.
Nickel-chrome alloys, titanium, and other resistive materials
can be vacuum-deposited for thin film resistors. Glass
resistors are also available for many resistor applications.
Two examples of glass resistors are the precision resistor and
the low power resistor.
4.14 TRANSFORMERS, DRY
A transformer is a stationary apparatus for converting
electrical energy at one alternating voltage into electrical
energy at another (usually different) alternating voltage by
means of magnetic coupling (without change of frequency). Dry
transformers use standard metal working and metal finishing
processes (covered by the Metal Finishing category). The main
operations in manufacturing a power transformer are the
manufacture of a steel core, the winding of coils, and the
assembly of the coil/core on some kind of frame or support.
4-20
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4.15 TRANSFORMERS, FLUID FILLED
Wet transformers perform the same functions as dry transformers,
but the former are filled with dielectric fluid. Wet tran-
formers use standard metal working and metal finishing processes
which are covered by the Metal Finishing category. The only wet
process unique to E&EC are the cleanup and management of
residual dielectric fluid. The main operations in manufacturing
a power transformer are the manufacture of a steel core, the
winding of coils, and the assembly of the coil/core on some kind
of frame or support. In the manufacture of wet transformers
there is the need for a container or tank to contain the
dielectric fluid.
4.16 INSULATED DEVICES, PLASTIC AND PLASTIC LAMINATED
An insulated device is a device that prevents the conductance of
electricity (dielectric). Plastic and plastic laminates are
types of insulators. Plastics are used in electronic
applications as connectors and terminal boards. Other uses
include switch bases, gears, cams, lenses, connectors, plugs,
stand-off insulators, knobs, handles, and wire ties.
Thermosetting plastics are melted and injected into a closed
mold where they solidify. These insulating moldings include
polyethylene, polyphenylene, and poly vinyl chloride. Laminates
are used in transformer terminal boards, switchgear arc chutes,
motor and generator slot wedges, motor bearings, structural
support, and spacers. Laminates are made by bonding layers of a
reinforcing web. The reinforcements consist of fiberglass,
paper, fabrics, or synthetic fibers. The bonding resins are
usually phenolic, melamine, polyester, epoxy, and silicone.
Laminates are made by impregnating the reinforcing webs in
treating towers, partially polymerizing, pressing and finally
polymerizing them to shape under heat and pressure.
Manufacturing processes associated with these products are
studied as part of the Plastics Molding and Forming category.
4.17 INSULATED WIRE AND CABLE, NON-FERROUS
Insulated wires and cables are products containing a conductor
covered with a non-conductive material to eliminate shock
hazard. The major products in this segment are: (1) insulated
non-ferrous wire, (2) auto wiring systems, (3) magnetic wire,
(4) bulk cable appliances, and (5) camouflage netting. Typical
processes used in the manufacture of insulated wire and cable
are drawing, spot welding, heat treating, forming, and
assembling. All manufacturing processes are included in the
Metal Finishing category. Some of the basis materials are
copper, carbon, stainless steel, steel, brass-bronze, and
aluminum.
4-21
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4.18 FERRITE ELECTRONIC PARTS
Ferrite electronic parts are electronic products utilizing
metallic oxides. The metallic oxides have ferromagnetic
properties that offer high resistance, making current losses
extremely low at high frequencies. Ferrite electronic products
include: (1) magnetic recording tape, (2) magnetic tape
transport heads, (3) electronic and aircraft instruments, (4)
microwave connectors and components, and (5) electronic digital
equipment. Some typical processes to manufacture ferrite
electronic parts are shearing, slitting, fabrication and
machining. All production processes in this segment are
included in the Metal Finishing category. Some typical raw
materials are aluminum, magnesium, bronze, and brass.
4.19 MOTORS, GENERATORS, AND ALTERNATORS
Motors are devices that convert electric energy into mechanical
energy. Generators are devices which convert an input
mechanical energy into electrical energy. Alternators are
devices that convert mechanical energy into electrical energy in
the form of an alternating current. The major motor, generator,
and alternator products are: (1) variable speed drives and gear
motors, (2) fractional horsepower motors, (3) hermetic motor
parts, (4) appliance motors, (5) special purpose electric
motors, (6) electrical equipment for internal combustion
engines, and (7) automobile electrical parts. Some typical
processes are casting, stamping, blanking, drawing, welding,
heat treating, assembling and machining. All production
processes are included in the Metal Finishing category. Some
basis materials are carbon steel, copper, aluminum and iron.
These materials are used as sheet metal, rods, bars, strips,
coils, casting, and tubing,
4.20 RESISTANCE HEATERS
Resistance heaters convert electrical energy into usable heat
energy. Three types of resistance heaters are made; rigid
encased elements used for electric stoves and ovens, bare wire
heaters used in toasters and hair dryers, and insulated flexible
heater wire that is incorporated into blankets and heating pads.
Some typical processes used in the manufacture of resistance
heaters are plating, welding or soldering, molding, and
machining. These processes are included in the Metal Finishing
category. Some raw materials used are steel, nickel, copper,
plastic, and rubber.
4.21 SWITCHGEAR
Switchgear are products used to control electrical flow and to
protect equipment from electrical power surges and short
4-22
-------
circuits. The major switchgear products are: (1) electrical
power distribution controls and metering panel assemblies, (2)
circuit breakers, (3) relays, (4) switches, and (5) fuses. Some
typical manufacturing processes are: chemical milling,
grinding, electroplating, soldering or welding, machining and
assembly. All processes are included in the Metal Finishing and
Plastics Processing categories. Some typical basis materials
are plastic, steel, copper, brass, and aluminum.
4-23
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SECTION 5
WASTEWATER CHARACTERISTICS
This section presents information related to wastewater flows,
wastewater sources, pollutants found, and the sources of these
pollutants. For subcategories which are excluded or deferred,
the discussion of wastewater characteristics is abbreviated. A
general discussion of sampling techniques and wastewater
analysis is also provided.
5.1 SAMPLING AND ANALYTICAL PROGRAM
More than 250 plants were contacted to obtain data on the E&EC
Category. Seventy-eight of these plants were visited for an
on-site study of their manufacturing processes, water used and
wastewater treatment. In addition, wastewater samples were
collected at thirty-eight of the plants visited in order to
quantitate the level of pollutants in the waste streams.
Sampling was utilized to determine the source and quantity of
pollutants in the raw process wastewater and the treated
effluent from a cross-section of plants in the E&EC Category.
5.1.1 Pollutants Analyzed
The chemical pollutants sought in analytical procedures fall
into three groups: Conventional, non-conventional, and toxics.
The latter group comprises the 129 chemicals found in the
priority pollutant list shown in Table 5-1 (p. 5-11).
Conventional pollutants are those generally treatable by
secondary municipal wastewater treatment. The conventional
pollutants examined for this study are:
PH
Biochemical Oxygen Demand (BOD)
Oil and Grease (O&G)
Total Suspended Solids (TSS)
Non-conventional pollutants are simply those which are neither
conventional nor on the list of toxic pollutants. The non-
conventional pollutants listed on page 5-2 were examined in one
or more subcategories of the E&EC industry.
5-1
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Bismuth
Europium
Fluoride
Gadolinium
Gallium
Indium
Lithium
Niobium
Tellurium
Total Organic Carbon
Total Phenols
Yttrium
Calcium
Magnesium
Aluminum
Magnanese
Vanadium
Boron
Barium
Molybdenum
Tin
Cobalt
Iron
Titanium
Xylenes
Alkyl Epoxides
Platinum
Palladium
Gold
5.1.2 Sampling Methodology
During the initial visit to a facility, a selection was made of
sampling points so as to best characterize process wastes and
evaluate the efficiency of any wastewater treatment. The nature
of the wastewater flow at each selected sampling point then
determined the method of sampling, i.e., automatic composite or
grab composite. The sampling points were of individual raw
waste streams, or treated effluent.
Each sample was collected whenever possible by an automatic time
series compositor over a single 24-hour sampling period. When
automatic compositing was not possible, grab samples were taken
at intervals over the same period, and were composited manually.
When a sample was taken for analysis of toxic organics, a blank
was also taken to determine the level of contamination inherent
to the sampling and transportation procedures.
Each sample was divided into several portions and preserved,
when necessary, in accordance with established procedures for
the measurement of toxic and classical pollutants. Samples were
shipped in ice-cooled containers by the best available route to
EPA-contracted laboratories for analysis. Chain of custody for
the samples was maintained through the EPA Sample Control Center
tracking forms.
5.1.3 Analytical Methods
The analytical techniques for the identification and quantita-
tion of toxic pollutants were those described in Sampling and
Analysis Procedures for Screening of Industrial Effluents for
Priority Pollutants^revised in April 1977.
5-2
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In the laboratory, samples for organic pollutant analysis were
separated by specific extraction procedures into acid (A), base/
neutral (B/N), and pesticide (P) fractions. Volatile organic
samples (V) were taken separately as a series of grab samples at
four-hour intervals and composited in the laboratory. The
analysis of these fractions included the application of strict
quality control techniques including the use of standards,
blanks, and spikes. Gas chromatography and gas chromatography/
mass spectrometry were the analytical procedures used for the
organic pollutants. Two other analytical methods were used for
the measurement of toxic metals: Flameless atomic absorption
and inductively coupled argon plasma spectrometric analysis
(ICAP). The metals determined by each method were:
Flameless AA
Antimony
Arsenic
Selenium
Silver
Thallium
ICAP
Beryllium
Cadmium
Chromium
Copper
Lead
Nickel
Zinc
Mercury was analyzed by a special manual cold-vapor atomic
absorption technique.
For the analysis of conventional and non-conventional pol-
lutants, procedures described by EPA were followed. The
following conventions were used in quantifying the levels
determined by analysis:
o Pollutants detected at levels below the quantitation
limit are reported as "less than" (<) the quantitation
limit. All other pollutants are reported as the
measured value.
o Sample Blanks - Blank samples of organic-free dis-
tilled water were placed adjacent to sampling points
to detect airborne contamination of water samples.
These sample blank data are not subtracted from the
analysis results, but, rather, are shown as a (B) next
to the pollutant found in both the sample and the
blank. The tables show data for total toxic organics,
toxic and non-toxic metals, and other pollutants.
o Blank Entries - Entries were left blank when the para-
meter was not detected.
5-3
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5.2 SEMICONDUCTORS
5.2.1 Wastewater Flows
Table 5-2 presents a summary of the quantities of wastewater
generated by the Semiconductor subcategory.
TABLE 5-2
SEMICONDUCTOR SUBCATEGORY
PROCESS WASTEWATER $
Maximum
I/day (gal/day)
Minimum
I/day (gal/day)
11,100,000 (2,940,000) 212,000 (56,000)
CONCENTRATED FLUORIDE WASTEWATER FLOW:
5,450 (1,440) 95 (25)
Average
I/day (gal/day)
594,000 (157,000)
678 (179)
Total Subcategory Process Water Use = 193,000,000 liters/day
(51,000,000 gal/day)
5.2.2 Wastewater Sources
Contact water is used throughout the production of semicon-
ductors. Plant incoming water is first pretreated by deioniza-
tion to provide ultrapure water for processing steps. This
ultrapure water or deionized (DI) water is used to formulate
acids? to rinse wafers after processing steps; to provide a
medium for collecting exhaust gases from diffusion furnaces,
solvents, and acid baths; and to clean equipment and materials
used in semiconductor production. Water also cools and lubri-
cates the diamond saws and grinding machines used to slice, lap,
and dice wafers during processing.
5.2.3 Pollutants Found and Sources of These Pollutants
The major pollutants found at facilities in the Semiconductor
subcategory are as follows:
Fluoride
Toxic Organics
pH
5-4
-------
The process, steps associated with the sources of these
pollutants are described in Section 4.1.3 (p. 4-2). Table 5-3
(p. 5-13) summarizes pollutant concentration data for the
sampled raw waste streams. Tables 5-4 through 5-15 (pages 5-15
through 5-73) present the analytical data for twelve sampled
plants in the Semiconductor subcategory.
Fluoride — The source of fluoride is hydrofluoric acid, which
is used as an etchant and a cleaner. Certain areas of the basis
material are etched to provide surfaces receptive to the entry
of dopants that are subsequently added to the wafer. The major
source of fluoride comes from the discharge of spent hydro-
fluoric acid after its use in etching. (The flows of this waste
steam are shown in Table 5-2.) Minor quantities of fluoride
enter the plant wastewater from rinses of etched or cleaned
wafers.
Toxic organics — The sources of toxic organics are solvents
used for drying the wafer after rinsing, developing of photo-
resist, stripping of photoresist, and cleaning. These solvents
may include acetone, methanol, isppropyl alcohol, 1,1,1-tri-
chloroethane and trichloroethylene. While residual amounts of
solvents in wastewaters come from solvent rinses, their primary
sources are the dumping of solvent baths. This is indicated by
Table 5-16 (p. 5-74) which presents data from individual process
streams and associated effluent streams at several semiconductor
facilities. Concentrations of residual toxic organics in these
streams range from <0.01 milligrams per liter to 0.10 milligrams
per liter while the effluent streams sampled at the same plants
contain toxic organic concentrations ranging from 1.613
milligrams per liter to 245.3 milligrams per liter. If total
toxic organic concentrations in the effluent streams were caused
by dragout on the wafer and the carrier boat (i.e., process
rinse streams), the value for total toxic organics in these
streams would be much higher. Because this is
not the case, toxic organics must be entering the effluent
stream from direct discharge of solvents.
pH — This parameter may be very high or very low. High pH
results from the use of alkalis for caustic cleaning. Low pH
results from the use of acids for etching and cleaning.
Several toxic metals were found in the wastewater because of
electroplating operations associated with semiconductor manu-
facture. These metals are chromium, copper, nickel and lead,
and are regulated under the Metal Finishing Category.
5-5
-------
5.3 ELECTRONIC CRYSTALS
5*3.1 Wastewater Flows
The following table (5-17) contains a summary of the wastewater
flows generated in the Electronic Crystals subcategory.
TABLE 5-17
SUMMARY OF WASTEWATER QUANTITIES GENERATED
IN THE ELECTRONIC CRYSTALS SUBCATEGORY
No. of Plants
All Plants 49
5.3.2 Wastewater Sources
Wastewater Discharge
Mm Max
Liters/day
Mean
95 1,839,800 112,400
The major source of wastewater from the manufacture of elec-
tronic crystals is from rinses associated with crystal fabrica-
tion, although some wastewater may be generated from crystal
growing operations. Fabrication steps generating wastewater are
slicing, lapping, grinding, polishing, etching, and cleaning of
grown crystals. Certain growth processees generate a large
volume of wastewater from the discharge of spent solutions of
sodium hydroxide and sodium carbonate after each crystal growth
cycle.
5.3*3 Pollutants Found and the Sources of These Pollutants
The major pollutants of concern from the Electronic Crystals
subcategory are:
Toxic Organics
Fluoride
Arsenic
TSS
PH
The process steps associated with the sources of these pollu-
tants are described in Section 4.2.3 on page 4-10. Table 5-18
(p. 5-75) summarizes the occurrence and levels at wh±6h" tlBese
pollutants a're''"faund'^irs'e7ri^ and analysis of raw
• ---... . ., .. ,„-,.!"• ..-.'i>ii>«i^ •"-ipJM*'-.i-nr^i,.!^,--' n.t'-''>*IV"'W"*"**'*1'''«*a"!'J <-•"<•-• i --J •. '•',•*• ' '••-' ' '-
wastes from eight crystals facilities. Concentrations represent
. . • - • '• ••?*•• I, •.•mwy tn+m-'tj-'H*..•r.*''rf*"«Hv~*X'.• • •J-rf'-X-'f • - ..k.'ii irv. ,'. ( n -r'i-» -. •! , • ' •_ t
total raw wastes after flow-prggortionin^inaividuai discharge....,
steams."-;* TaT5tesP5 -1 ^ through 5 -2"6" (p. 5 -7 6 through p. 5-83),
summarize the analytical data obtained frome each of the plants
sampled and identify products produced and wastewater flows.
Toxic organics — found in wastewater from the manufacture of
electronic crystals as a result of the use of solvents such as
5-6
-------
isopropyl alcohol, 1,1,1-trichloroethane, Freon, and acetone.
These materials are used for cleaning, degreasing, and drying of
crystals. High concentrations of these toxic organics in waste
streams are the result of uncontrolled dumping of solvent rinse
tanks. Another source of toxic organics could be contaminants
in oils used as lubricants in slicing and grinding operations.
Fluoride — has as its source the use of hydrofluoric acid or
ammonium bifluoride for etching electronic crystals. A minor
source of fluoride is from the etch rinse process.
Arsenic — originates from the gallium arsenide and indium
arsenide used as raw material for crystals. Process steps
generating wastewater containing arsenic are cleaning of the
crystal-growing equipment, slicing and grinding operations, and
etching and rinsing steps.
Total Suspended Solids — common in crystals manufacturing waste
streams as crystal grit from slicing and grinding operations.
Grit and abrasives wastes are also generated by grinding and
lapping operations.
pH — may be very high or very low. High pH results from the
presence of excess alkali such as sodium hydroxide or sodium
carbonate. The alkali may come from crystal growth processes or
from caustic cleaning and rinsing. Low pH results from the use
of acid for etching and cleaning operations.
Several toxic metals were found in the wastewater because of
electroplating operations associated with electronic crystals
manufacture. These metals are chromium/ copper, lead, nickel,
and zinc, and are regulated under the Metal Finishing Category.
5.4 CARBON AND GRAPHITE PRODUCTS
The average flow of wastewater from these plants is 24.2 x
I/day (6,388,400 gal/day). The major pollutants found and their
concentrations are presented below:
Toxic Pollutants
Pollutant
Total Toxic Inorganics
Bis(2-ethylhexyl)phthalate
Methylene Chloride
Total Toxic Organics
Raw Waste Load
Concentration
(mg/1)
0.080
0.042
0.013
0.080
Raw Waste Load
kg/day (Ibs/day)
1.93 (4.26)
1.02
0.31
(2.24)
(0.69)
1.93 (4.26)
5-7
-------
Raw waste concentrations are based on flow weighted means from
four plants. For toxic inorganics only flow weighted mean
concentrations greater than or equal to 0.1 mg/1 are shown.
For toxic organics only flow weighted mean concentrations
greater or equal to 0.01 mg/1 are shown.
5.5 MICA PAPER
The average flow of wastewater from these plants is 3.50 x
I/day (926,000 gal/day). The major pollutants found and their
concentrations are presented below:
Toxic Pollutants
Pollutant
Total Toxic Inorganics
1,1,1-Trichloroethane
Methylene Chloride
Total Toxic Organics
Raw Waste Load
Concentration
(mg/1)
0.055
0.180*
0.029*
0.209
Raw Waste Load
kg/day (Ibs/day)
0.20 (0.44)
0.63
0.10
(1.39)
(0.22)
0.73 (1.61)
*Not confirmed by process or raw material usage.
Raw waste concentrations are based on raw waste data from one
plant. For toxic organics only concentrations greater than or
equal to 0.01 mg/1 are shown.
5.6 INCANDESCENT LAMPS
The average flow of wastewater from these plants is 7.74 x 10^
I/day (540,100 gal/day). The major pollutants found and their
concentrations are described below:
Toxic Pollutants
Pollutant
Chromium
Copper
Lead
Total Toxic Inorganics
Methylene Chloride
Chloroform
Dichlorobromomethane
Total Toxic Organics
Raw Waste Load
Concentration
(mg/1)
0.714
0.420
0.11
1.377
0.048
0.024
0.010
0.082
Raw Waste Load
kg/day (Ibs/day)
1.46
0.86
0.23
2.82
0.05
0.10
0.03
0.17
(3.22)
(1-89)
(0.50)
(6.21)
(0.11)
(0.22)
(0.05)
(0.38)
5-8
-------
Raw waste concentrations are based on flow weighted means from
three Plants. For toxic inorganics only flow weighted mean
concentrations greater than or equal to 0.1 mg/1 are shown. For
toxic organics only flow weighted mean concentrations greater
than or equal to 0.01 mg/1 are shown.
5.7 FLUORESCENT LAMPS
The major pollutants found in wastewaters from these plants and
their concentrations or mass loadings are presented below:
Toxic Pollutants
Pollutant
Antimony
Cadmium
Total Toxic Inorganics
Methylene Chloride
Toluene
Total Toxic Organics
Raw Waste Load
Concentration
(mg/1)
0.458
0.307
0.063
0.011
Raw Waste Load
kg/day (Ibs/day)
0.80 (1.76)
0.07 (0.16)
5.8 FUEL CELLS
Only a few plants manufacture fuel cells and these do not do so
on a regular basis. In addition, all pollutants found were at
quantities too low to be effectively treated.
5.9 MAGNETIC COATINGS <
This subcategory discharges only a small amount of pollutants to
water. The average wastewater discharge from this subcategory
is 19,000 I/day (5,000 gal/day). The total toxic metals dis-
charge for the subcategory is 0.045 kg/day (0.099 Ibs/day),
total toxic organics is 0.018 kg/day (0.040 Ibs/day).
5.10 RESISTORS
No wastewaters result from the manufacture of resistors.
5.11 DRY TRANSFORMERS
No wastewaters result from the manufacture of dry transformers.
5-9
-------
5.12 ELECTRON TUBES
*7 The Agency has insufficient information to adequately
' 'characterize pollutants from this subcategory. Preliminary data
indicate that wastewater flows from plants manufacturing cathode
ray and T.V. picture tubes are in the range of 200,000 to
500,000 liters/day and that the major pollutants are fluoride
and lead.
5.13 PHOSPHORESCENT COATINGS
Data presently available to the Agency are insufficient to
adequately characterize the wastewater discharges for the
Phosphorescent Coatings subcategory. Preliminary data indicate
that wastewater flows from these plants range from 100,000 to
700,000 liters (30,000 to 200,000 gallons) per day; and the
major pollutants are suspended solids, fluoride, cadmium, and
zinc.
5.14 ALL OTHER SUBCATEGORIES
Information obtained from plant visits showed that wastewater
discharges in the following subcategories result primarily from
processes associated with metal finishing and, in the case of
insulated plastic and plastic-laminated devices, from processes
associated with the EPA study on plastics molding and forming.
Because these, processes .are, studied elsewhere, the E&EC project
limited its sampling effort in these areas:
Switchgear and Fuses
Resistance Heaters
Ferrite Electronic Parts
Insulated Wire and Cable
Fluid-filled Capacitors
Fluid-filled Transformers
Insulated Devices — Plastics and Plastic Laminated
Motors, Generators, and Alternators
Fixed Capacitors
5-10
-------
TABLE 5-1
THE PRIORITY POLLUTANTS
TOXIC POLLUTANT
1. Acenaphthene 46.
2. Acrolein 47.
3. Acrylonitrlle 48.
4. Benzene 49.
5. Benzidine 50.
6. Carbon Tetrachloride (Tetrachloromethane) 51.
7. Chlorobenzene 52.
8. 1,2,4-Trichlorobenzene 53.
9. Hexachlorobenzene 54.
10. 1,2-Dichlorethane 55.
11. 1,1,1-Trichloroethane 56.
12. Hexachloroethane 57.
13. 1,1-Dichloroethane 58.
14. 1,1,2-Trichloroethane 59.
15. 1,1,2,2-Tetrachloroethane 60.
16. Chloroethane 61.
17. Bis(ch1oromethyl)ether 62
18. Bis(2-ch1oroethyl)ether 63.'
19. 2-Chloroethyl Vinyl Ether (Mixed) 64.
20. 2-Chloronaphthalene 65.
21. 2,4,6-Trichlorophenol 66.
22. p-Chloro-m-cresol 67.
23. Chloroform (Trichloromethane) 68.
24. 2-Chlorophenol 69.
25. 1,2-Dichlorobenzene 70.
26. l,3-D1chlorobenzene 71.
27. 1,4-Dichlorobenzene 72.
28. 3,3'-Dichlorobenzidine 73.
29. 1,1-Dichloroethylene 74.
30. 1,2-trans-Dichloroethylene 75.
31. 2,4-Dichlorophenol 76.
32. 1,2-Dichloropropane 77.
33. l,3-Dichloropropylene(l,3-Dichloropropene) 78.
34. 2,4-Dimethyl Phenol 79.
35. 2,4-Dinitrotoluene 80.
36. 2,6-Dinitrotoluene 81.
37. 1,2-Diphenylhydrazine 82.
38. Ethylbenzene 83.
39. Fluoranthene 84.
40. 4-Chlorophenyl Phenyl Ether 85.
41. 4-Bromophenyl Phenyl Ether 86.
42. Bis(2-chloroisopropy1)ether 87.
43. Bis(2-chloroethoxy)methane 88.
44. Methylene ChloridefDichloromethane) 89.
45. Methyl Chloride(Chloromethane) 90.
Methyl Bromide (Bromomethane)
Bromoform (Tribromomethane)
Dichlorobromomethane
Trichlorofluoromethane
Dichlorodifluoromethane
Chlorodibromomethane
Hexachlorobutadiene
Hexachlorocyclopentadiene
Isophorone
Naphthalene
Nitrobenzene
2-Nitrophenol
4-Nitrophenol
2,4-Dinitrophenol
4,6-Dinitro-o-cresol
N-Nitrosodimethylamine
N-Nitrosod1phenylamine
N-Nitrosodi-n-propylamine
Pentachlorophenol
Phenol
Bis(2-ethylhexyl) Phthalate
Butyl Benzyl Phthalate
Di-n-butyl Phthalate
Di-n-octyl Phthalate
Diethyl Phthalate
Dimethyl Phthalate
1,2-Benzanthracene [Benzo{a)anthracene]
Benzo(a)Pyrene (3,4-Benzopyrene)
3,4-Benzof1uoranthene [Benzo{b)f1uoranthene]
11,12-Benzofluoranthene [Benzo(k)fluoranthene]
Chrysene
Acenaphthylene
Anthracene
1,12-Benzoperylene [8enzo{ghi)perylene]
Fluorene
Phenanthrene
1,2,5,6-Dibenzathracene [Dibenzo(a,h)anthracene]
Indeno(l,2,3-cd)pyrene (2,3-0-Phenylenepyrene)
Pyrene
Tetrachloroethylene
Toluene
Trichloroethylene
Vinyl Chloride (Chloroethylene)
Aldrin
Dieldrin
5-11
-------
TABLE 5-1 (continued)
91. Chlordane 109.
(Technical Mixture and Metabolites) 110.
92. 4,4'-DDT 111.
93. 4,4'-DDE(P,P'-DDX) 112.
94. 4,4'-DOD(P,P'-TOE) 113.
95. Alpha-Endosulfan 114.
96. Beta-Endosulfan 115.
97. Endosulfan Sulfate 116.
98. Endrin 117.
99, Endrin Aldehyde 118.
100. Heptachlor 119.
101. Heptachlor Epoxide(BHC-Hexachloro- 120.
cyclohexane) 121.
102. Alpha-BHC 122.
103. Beta-BHC 123.
104. Gamma-BHC(Lindane) 124.
105. Delta-BHC 125.
106. PCB-1242 (Aroclor 1242) 126.
107. PCB-1254 (Aroclor 1254) 127.
108. PCB-1221 (Aroclor 1221) 128.
129.
PCB-1232 (Aroclor 1232)
PCB-1248 (Aroclor 1248)
PCB-1260 (Aroclor 1260)
PCB-1016 (Aroclor 1016)
Toxaphene
Antimony
Arsenic
Asbestos
Beryllium
Cadmium
Chromium
Copper
Cyanide \
Lead
Mercury
Nickel
Selenium
Silver
Thallium
Zinc
2,3,7,8-Tetrachlorodibenzo-p-dioxin(TCDD)
5-12
-------
TABLE 5-3
SEMICONDUCTOR
ARY OF RAW WASTE DATA
1
I-1
U)
I fj i » J-2 )
Plants Not Proctlclno Solvent Manaoement tV ' PI*"" I
No./Pol lutant Name 02040
mg/l
8 1,2,4-Trlchlorobenzene
11 1,1,1-Trlchloroethane 1.100
21 2,4,6-Trlchlorophenol
23 Chloroform 0.05
24 2-Chlorophenol
25 1,2-Dlchlorobenzene 0.068
26 1 , 3-D I ch 1 oroben zene
27 1,4-Dlchlorobenzene 0.410
29 1,l-Dlchloro9thyleno
31 2,4-Dlchlorophenol
38 Ethylbensane
44 Methylene chloride 0.095
55 Naphthalene
57 2-N[trophenol
58 4-N1 tropheno 1
64 Pentachlorophenol
65 Phenol 0.270
66 Bts{2-ethylhexyl)
phthalate 0.019
68Dl-n-butyl phthala+9
65 Telrach loroethy lens
86 Toluene 0. HO
87 Trlchloroethy tene
TOTAL'TOXIC OflGANICS 2.152
02347
mg/ 1
0.089
0.022
0.860
0.170
0.017
2.400
0.810
0.013
3.500
7.881
04294
mg/l
27.100
0.013
0.012
186.000
14.800
14.600
0.107
0.101
1.504
0.039
0.250
0.170
0.012
0.017
0.143
0.204
24 5. 272
04296
mg/l
4.500
0.090
4.500
0.235
0.235
0.190
0.035
3.500
0.050*
13.335
06143
mg/l
C^oJ>j}
Th930* 3.200 7-'0> (C020:_0.071>
0.047
(_p".015 0.011 )
0. 180 0.043
6 5*
C690 0.610 oTJffJ-
1.852 3.885 6.230
35035
mg/l
^^00 5. 200 5. 300^
0.015
0.018
'- -."' . *•
&.Q22 "" Q^PJJ;
&n££^^
(SToTj 0/0 18 0^0!4p
0^4
'5^3)5 0.263 0.44o)
0.013
0.013
0.016
4.669 5.593 5.923
41061
mg/l
0.630
0.019
0.078
0.051
0.053
0.760
0.022
1.613
1 £ ,'• .".
Hants Practicing Solvont M.'naanment 1 V '
36133
mg/l
0,020*
0.052*
0.072
36135
mg/l
0.037
O.OJO
0.011
0.078
30167
mg/l
foToTt 0.0 16,
0.080
.0^2-
("0.0505 0. 013)
0.057
0.2085 0.029
36136
mg/l
0.01!
Q.049
0.062
4ZCM4
mg/l
0.130
. ^V - • 0.0^!
0.01?
0.047 0.040 0.031.
(fCojis 0.041 0.070_}
0.130
0.013 0.011
0.195 0.180 0.180
0.070 0.0?0
0.050
0.015
0.444 0.399 0.466
1 Solvent Managemenr means that facilities segregate and collect spent solvents for sale to reclaimers or contract disposal.
* Pollutants xera also found In blanks.
-------
TABLE 5-3. (Continued)
SEMICONDUCTOR
SUMMARY OP RAW WASTE DATA
TOXIC METALS
Parameter
114
115
117
118
119
120
122
123
124
125
126
127
128
Antimony
Arsenic
Beryllium
Cadmium
Chromiumt
Copperi
Leadt
Mercury
Nickelf
Selenium
Silver
Tallium
Zinc
Total Toxic Inorganics
Min. Cone.
mq/1
<0.001
-------
TABLE 5-4
ft/'
Ul
I
Stream Description
Flow (1/hr)
Duration (hrs)
Sample ID No.
TOXIC ORGANICS
4 Benzene
7 Chlorobenzene
8 1,2,4-Trichlorobenzene
11 1,1,1-Yrichloroethane
13 1,1-Dichloroethane
23 Chloroform
24 2-Chlorophenol
25 1,2-Dichlorobenzene
26 1,3-Dichlorobenzene
27 1,4-Dichlorobenzene
29 1,1-Dichloroethylene
31 1,2-Dichloropnenol
37 1,2-Diphenylhydrazine
38 Ethylbenzene
39 Fluoranthene
44 Methylene Chloride
51 Chlorcdibrcmomethane
55 Naphthalene
57 2-Nitrophenol
58 4-Nitrophenol
65 Phenol
66 Bis(2~ethylnexyl)phthalate
67 Butyl benzyl phthalate
68 Di-N-Butyl phthalate
69 Di-N-Octyl phthalate
70 Diethy1 Phthalate
71 Dimethyl phthalate
85 Tetrachloroethylene
86 Toluene
87 Trichloroethylene
121 Cyanide*
Total Toxic Organics
TOXIC INORGANICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
Scrubber
5437
24
3480
Concentration Mass Load
rog/1 kg/day
SEMICONDUCTOR PROCESS HASTES
PLAWr 02040
Quartz Tube Clean
29.0
24
34B1
Concentration
mg/1
<0.005
0.006
<0.001
<0.001
0.009
0.002
<0.001
<0.001
<0.001
<0.003
0.0008
0.001
0.0003
<0.005
0.074
<0.001
0.05
<0.001
<0.001
0.25
<0.001
0.90
<0.003
0.00005
0.00003
0.0002
0.0006
Polish + Remove Wax
2178
24
3477
Effluent
463505
24
3478
Mass Load Concentration Mass Load \ Concentration
rog/1 kg/day
<0.01
<0.01
0.047
0.012
<0.01
0.046
0.01
<0.01
0.010
<0.01
<0.01
<0.01
0.105
<0.005
0.004
<0.001
<0.001
<0.001
0.056
0.034
0.001
<0.001
<0.003
0.0025
0.0006
0.002
0.0005
} <.01
/ <0.01
I
i 1.10
: <0.01
0.05
<0.01
0.068
0.410
<0.01
<0.01
0.095
<0.01
<0.01
<0.01
0.270
0.0005 0.019
<0.0t
<0.01
<0.01
0.14
<0.01
<0.005
0.0055
0.0002
0.003
0.002
0.00005
2.057
<0.005
0.01
<0.001
0.002
0.341
0.413
0.025
<0.001
4.964
<0.003
Mass Load
kg/day
12.24
0.56
0.76
4.56
3.0
0.21
1.56
22.88
0.11
0.02
3.79
4.59
0.28
55.2
eluded in Total Toxic Organics Figure
-------
TABLE 5-4 (CONT)
SEHICOKDUCTOR . .CESS WASTES
PLANT 02040
Stream Description
Flow (l/hr)
Sample ID No.
TUX' 1C INORGANICS (COMTJ
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Bar urn
Boron
*Calciiui
Cobalt
Gold
Iron
*Hagnesium
Manganese
Holybdenun
Palladium
Platinum
Tellurium
Tin
Titanium
Vanadium
yttrium
Phenols
Total Organic Carbon
fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
PH
Scrubber
5437
3480
Concentration Mass toad
mg/1 kg/day
<0.005
<0.025
0.04
0.057
<0.001
0.026
0.267
36.36
0.002
<0.02
0.012
19.34
0.009
0.005
<0.08
<0.05
50.52
<0.02
0.016
0.001
0.130
0.001
<0.010
8
0.46
0.007
Quartz lube Clean
29. U
3481
Concentration Mass Load
"g/1 kg/day
<0.005
<0.025
0.005 0.80
2.076
0.003
0.035
0.0003
0.0016
0.0012
0.0007
0.002)
0.017
0.0013
1.04
0.06
16.31
0.05
60.66
45.92
0.48
<0.02
0.46
23.78
<0.001
0.57
<0.08
-------
TABLE 5-4 (CONT)
Stream Description
Flow (1/hr)
Duration (hrs)
Sample ID No.
TOXIC ORGAHJCS
f 4 Benzene
^- 7 Chlorobenzene
8 1,2,4-Trichlorobenzene
11 1,1,1-Tricbloroethane
13 1,1-Dichloroethane
23 Chloroform
24 2-Chlorophenol
25 1,2-Dichlorobenzene
26 1,3-Oichlotobenzene
27 1,4-Dichlorobenzene
29 1,1-Dichloroethylene
31 1,2-Dichlorophenol
37 1,2-Diplienylhydrazine
38 Ethylbenzene
39 Fluoranthene
Ln 44 Methylene Chloride
I 51 Chlorodibromomethane
I~! 55 Naphthalene
57 2-Nitrophenol
58 4-Nitrophenol
65 Pbeuol
66 Bis(2-ethylhexyl)phthalate
67 Butyl benzyl phthalate
68 Oi-N-Butyl phthalate
69 Oi-N-Octyl phthalate
70 Diethyl Phthalate
71 Dimethyl phthalate
85 Tetrachloroethylene
86 Toluene
87 Trichloroethylene
121 Cyanide*
Total Toxic Grganics
TOXIC INORGANICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
Machining Hastes
10402
24
03476
Concentration Mass Load
»g/1 kg/day
SEMICONDUCTOR PROCESS WASTES
PLANT 02040
Crystal .Growth Scrubbers
2580
24
03479
Concentration Mass Load
•g/1 kg/day
<0.01
0.01
0.02
<0.01
0.035
0.031
<0.01
<0.01
<0.01
0.096
0.007
0.003
<0,001
<0.001
<0.001
0.046
0.001
<0.001
<0.001
<0.003
0.003
0.005
0.009
0.008
0.025
0.002
0.001
0.012
0.0002
0.017
0.007
<0.001
I <0.001
0.011
0.007
-------
TABLE 5-4 (CONT)
I
h-1
CO
Streaa Description
Flow (1/hr)
Duration (hrs)
Saaiple ID No.
TOXIC INORGANICS (CONT)
126 Silver
127 Thalliiw
128 Zinc
Total Toxic Inorganics
NON-CCNVEMriONAL POUiTTAMTS
Aluminun
Bar iiui
Boroo
CalciiiM
Cobalt
Cold
Iron
Magnesiun
Manganese
Hoiybdeniw
Palladium
Platioua
Sodiua
Tellurium
Tin
Titanium
Vanadiua
Vttriiui
Phenols
Total Organic Carbon
Fluoride
Machining Hastes
10409
24
03476
Concentration
•g/1
<0.005
<0.025
1.113
0.015
0.024
0.222
28.040
<0.001
<0.020
0.169
13.500
0.006
0.001
<0.080
-------
TABLE 5-5
SEMICONDUCTOR PROCESS WASTES
PLANT 02347
Stream Description
Flow U/hr)
Duration (hrs)
Sample ID No.
TOXIC ORGANICS
4 Benzene
7 Chlorobenzene
8 1,2,4-Trichlorobenzene
11 1,1,1-Trichloroethane
13 1,1-Dichloroethane
23 Chloroform
24 2-Chlorophenol
25 1,2-Dichlorobenzene
26 1,3-Dichlorobenzene
27 1,4-Dichlorobenzene
29 1,1-Dichloroethylene
31 2,4-Dichlorophenol
37 1,2-Diphenylhydrazine
38 Ethylbenzene
39 Fluoranthene
44 Methylene chloride
51 Chlorodibromouethane
55 Naphthalene
57 2-Nitrophenol
58 4-Nitrophenol
65 Phenol
66 Bis(2-ethylhexyl)phthalate
67 Butyl benzyl phthalate
68 Di-N-butyl phthalate
69 Di-N-octyl phthalate
70 Diethyl phthalate
85 Tetrachloroethylene
86 Toluene
87 Trichloroethylene
121 Cyanide*
Total Toxic Organics
TOXIC INORGANICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
24
3474
Concentration Mass Load
«g/l kg/day
0.190
0.170
2.6
0.011
<0.01
<0.01
<0.01
1.9
0.220
<0.01
<0.01
<0.01
5.08
<0.005
0.003
<0.001
<0.001
<0.001
<0.001
<0.001
0.001
<0.001
<0.003
0.028
0.025
0.38
0.0016
0.278
0.032
0.744
0.0004
0.00015
Effluent '
130,688
w
3475
Concentration \ Mass Load
mg/1 kg/day
0.089
<0.01
0.022
<0.01
0.860
0.170
0.017
<0.01
<0.01
<0.01
2.4
<0.01
<0.01
0.810
0.013
<0.01*
<0.01
<0.01
<0.01
3.5
7.031
<0.005
0.002
<0.001
<0.001
0.110
1.182
0.042
0.001
<0.001
<0.003
0.279
0.069
0.53
0.053
7.53
2.54
0.04
10.98
22.053
0.0063
0.345
3.71
0.132
0.003
icluded in "total Toxic Organics Figure
-------
TABLE 5-5 (COMT)
SEHICONDUCTOR PROCESS WASTES
PLANT 02347
Ul
I
to
o
Streaa Description
Flow (1/hr)
Duration (bra)
Sample ID No.
TOXIC INORGANICS (COfT)
126 Silver
127 Tballiua
128 Zinc
Total Tonic Inorganics
NCN-CaWEMHOHAL POLUHftHIS
Aluadniui
Bariiw
Boroa
Calciiui
Cobalt
Gold
Iron
HagnesiiM
Haaganese
Molybdenwa
Palladium
Platiniw
Sodiiw
Telluriua
Tin
Titaniiui
Vanadiua
Yttriiw
Phenols
Total Organic Carbon
Fluoride
Scrubber
6099
3474
Concentration Han Load
3474
/Concentration Mass Load
•8/1
<0.005
<0.025
0.052
0.056
0.009
0.003
0.121
42.31
<0.001
<0.02
0.019
11.02
<0.001
o.ooa
<0.08
-------
TABLE 5-6
I
NJ
Stream Description
Flow (1/hr)
Duration (hrs)
Sanple ID Ho,
4 Benzene
7 Chlorobenzene
8 1,2,4-Trichlorobenzene
11 1,1,1-Trichloroethane
13 1,1-Dichloroethane
21 2,4,6-Trichlorophenol
23 Chloroform
24 2-Cblorophenol
25 1,2-Dichlorobenzene
26 1,3-Dichlorobenzene
27 1,4-Dichlorobenzene
29 1,1-Dichloroethylene
31 2,4-Dichlorophenol
34 2,4-Diinethylphenol
37 1,2'Diphenylhydrazine
38 Ethylbenzene
39 Fluoranthene
44 Hethylene chloride
48 Dichlorobroaonethane
51 Chlorodibromonethane
54 laophoroae
55 Naphthalene
57 2-Nitcophenol
58 4-NUrophenol
64 Pentactilotophenol
65 Phenol
66 Bis(2-ethylliexyl)phtiialate
67 Butyl benzyl phthalate
68 Di-N-butyl phthalate
69 Di-N-octyl phthalate
70 Diethyl phthalate
85 Tetrachloroethylene
86 Toluene
87 Trichloroethylene
103 Beta BHC
104 Gamma BHC
121 Cyanide*
Total Toxic Organic*
Developer Rinae
SEHICOKDUCTOR PROCESS WASTES
PUNf 04294
Etch Rime
3647
Concentcation
•8/1
HB» Load
kg/day
0.026
<0,OI
0.042
<0.01
0.021
Mas* Load
3648
Concentration
•8/1
Mass Load
kg/day
<0.01
<0,01
<0.01
<0.01
<0.01
<0.01
<0,01
<0.01
<0,01
<0.01
0.01
<0.005
0.021
"Mot included in "total Ttoxic Ocganics figure
-------
TABLE 5-6 (CONT)
LFl
I
to
ro
Stream Description
Flow (1/hr)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS
Developer Rinse
SEMICONDUCTOR r>«^£SS WASTES
PLANT 04294
Etch Rinse
3647
Concentration
•8/1
Mass Load
kg/day
114 Antioony
115 Arsenic
117 Berylliuv
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NCM-CCWVENriONAL POLU/TAMTS
Aluminum.
Barium
Calciun
Cobalt
Cold
Iron
Magnesium
Manganese
Molybdenim
Palladium
PlatinuM
Sodiua
Tellurium
Tin
Titaoiun
VanadiuM
yttrium
Phenols
Total Organic Carbon
Fluoride
<0.005
<0.003
<0.001
0.003
0.004
0.015
0.019
<0.001
0.057
•0.003
<0.003
<0.025
0.022
0.120
0,046
0.004
1.718
<0.001
0.055
0.077
0.001
0.004
0.071
0.023
0.002
0.001
0.005
0.014
30
0.15
3643
Concentratioa
Mass Load
kg/day
0.005
<0.003
<0.001
0.003
0.003
0.046
0.161
<0.001
0.07
<0.003
<0.003
<0.025
0.048
0.331
5.781
0.011
2.371
<0.001
0.149
0.142
0.006
0.019
18.315
0.203
0.036
0.081
<0.001
0.016
<1.0
875
Strip Resist Rinse
Metal Etch Rinse
3645
Concentratioa
•g/1
<0.005
<0.003
<0.001
0.00]
0.001
0.019
0.012
-------
TABLE 5-6 (CONT)
Stream Description
Flow (1/hr)
Duration (hrs)
Sample ID No.
Developer Rinse
SEMICONDUCTOR PROCESS WASTES
PLMff 04294
Etch Rinse
Strip Resist Rinse
Metal Etch Rinse
3647
Concentration
•g/1
Mass Load
kg/day
3643
Concentration
ng/1
Mass Load
kg/day
3645
Concentration
Mass Load
kg/day
3648
Concentration
ng/1
Mass Load
kg/day
CONVENTIONAL
Oil & Grease 3.0
Total Suspended Solids <5.0
Biochemical Oxygen Demand <4.0
31.0
<4.0
1.0
<5.0
<4.0
Ui
r
-------
TABLE 5-6 (CONT)
8EHICONDUCTOR PRu^a WASTES
PIAWT 04294
I
ro
Stream Description
Flow (1/hr)
Duration (bri)
ID No.
Wafer Thinning
3650
Concentration Man Load
•g/1 kg/day
TOXIC ORGAHICS
4 Benzene
7 Chlorobenzene
8 1,2,4-Trichlorobenzene
11 1,1,1-Trichloroelbane
13 1,1-Dicbloroethane
21 2,4,6-Tricfaloropbeuol
23 Chlorofom
24 2-Chlorophenol
25 1,2-Dicblorobenzene
26 l,3-Dicblorabenz«ne
27 1,4-Dichiarobenzene
29 1,1-Dichloroethylene
31 2,4-Dichloropbenol
34 2,4-Disetbylpbenol
37 l,2-Diphenylhydr*zine
38 Ethylbenzea*
39 fluoraatbene
44 Hetbyleoe chloride
48 DicblarobroMoaetbaoe
SI ChlorodibroMMMtbane
54 Isopborone
SS Naphthalene
57 2-Nilcopbenol
58 4-Nitropbeaol
64 Pentacbloropbenol
65 Hienol
66 Bis(2-etbylbexyl)phthal«te
67 Butyl benzyl pbtbaUte
68 Oi-N-butyl phthalate
69 Di-N-octyl pbtbalate
70 Diethyl phthalate
85 Tetracbloroethylene
86 Toluene
87 Trichloroetbylene
103 8eta BHC
104 Gamma BHC
121 Cyanide*
Total Toxic Organic*
6273
24
3652
Concentration Haai Load
kg/day
4.06
0.002
0.0018
28.0
2.23
2.23
0.016
0.015
0.226
0.006
0.038
0.026
0.0018
0.0026
0.022
0.031
36.928
1.504
0.039
0.250
0.170
0.012
0.017
0.143
<0.003
0.204
<0.005
245.272
* Not included in Total Ibxic Organics figure.
-------
TABLE 5-6 CCONT)
SEMICONDUCTOR PROCESS WASTES
PLM*F-0
-------
TABLE 5-6 (CONT)
Stream Description
Flow (1/hr)
Duration (hra)
Sample ID No.
Wafer Thinning
SEHICONDUCTOK PROCESS WASTES
PLAHT 04294
Eff
3650
Concentration
Mass Load
kg/day
3652 •
Concentration 'Hasi Load
"g/1 kg/day
I
to
POUJLTl-AMTS
Oil fc Grease
Total Suspended Solids
Biochemical Oxygen Demand
0.6
2.11
4.52
-------
Stream Description
Flow O/hr)
Duration (hrs)
Sample ID No.
TOXIC ORGANICS
Supply Water
1798
24
Hi6-0-0
Concentration Mass Load
*8/I kg/day
TABLE 5-7
SEMICONDUCTOR PROCESS WASTES
PIAOT 04296
Effluent
-__ 1798
24
H16-1-1
Concentratios Mass Load
»g/l kg/day
Scrubber
10
24
M16-2-1
Concentration Mass Load
•g/1 kg/day
4 Benzene
7 Chlorobenzene
8 1,2,4-Trichlorobenzene
11 1,1,1-Trichloroethane
13 1,1-Dichloroethane
23 Chloroform
24 2-Chlorophenol
25 1,2-Dichlorobenzene
26 1,3-Dichlorobenzene
27 1,4-Dichlorobenzene
29 1,1-Dichloroethylene
31 2,4-Dichlorophenol
37 1,2-Diphenylhydrazine
38 EthyJbenzene
39 Fluoranthene
44 Hethylene Chloride
51 Chiorodibronoraethane
55 Naphthalene
57 2-Nitrophenol
58 4-Nitrophenol
65 Phenol
66 Bis(2-ethylhexyl)phthalate
67 Butyl Benzyl Phthalate
68 Di-N-Butyl Phthalate
69 Di-N-Octyl Phthalate
70 Diethyl Phthalate
85 Tetrachloroethylene
86 Toluene
87 Trichloroethylene
121 Cyanide
Total Toxic Organics
TOXIC IHORGMHCS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
0.290
0.013
0.011
0.290
<0.0005
<0.005
<0.005
<0.001
<0.025
0.04
0.24
<0.001
<0.025
-------
TABLE 5-7 (CONT)
Strean Description
Flow (1/hr)
Duration (hri)
Sample ID No.
Supply Water
1798
H16-0-0
Concentration Mast Load
•I/I kg/day
SEMICONDUCTOR PROCESS WASTES
PUWT 04296
1798
Mlfr-1-1
Concentration Haas Load
•g/1 Kg/day
Scrubber
10
HI6-2-1
Concentration Hasa Load
•8/1 kg/day
(Ji
I
IO
00
TOXIC INQHGUJICS (OUT)
126 Silver
127 Thai HUB
128 Zinc
Total Toxic Inorganics
NOM-OCWVEWPICHAL POLU/BUfTS
Aluninwa
Bariiui
fioroa
Calciiw
Cobalt
Gold
Iron
Magnesium
Manganese
HolybdeniiM
Platinum
SodiuM
Telluriu«
Tin
Titaniiua
VanadiuM
Yttriiui
Phenols
Total Organic Carbon
Fluoride
-------
TABLE 5-8
SEMICONDUCTOR PROCESS WASTES
PLAOT 06143
-------
TABLE 5-8 (CONT)
Ui
I
Ul
o
Streaa Description
Flow (l/hr)
Duration (brs)
Sample ID No.
TOXIC INCItGANICS
114 Antiaony
US Arsenic
117 BecylUua
118 Cadmtw
119 ChromuM
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenitw
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
EOUJUXAHIS
Alminuai
Barium
Boron
Calciua
Cobalt
Gold
Iron
HagnesiuM
Manganese
HolybdeniM
Palladium
Platinum
Sodium
Tel lurium
Tin
Titaniun
Vanadium
Vttriiui
Phenols
Total Organic Carbon
Fluoride
Scrubber
2,509
24
3482
Concentration Mass Load
»g/l kg/day
0.002
0.004
-------
TABLE 5-8 (CONT)
Stream Description
Flow (1/hr)
Duration (hrs)
Sample ID No.
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
Scrubber
2,509
24
3482
Concentration Mass Load
«g/l kg/day
1.57
0.3
22
SEMICONDUCTOR PROCESS WASTES
PLANT 06143
Recycle
43,214
24
3483
Concentration Mass Load
ng/1 kg/day
0.09
0.018
1.32
3.41
0.3
0
3.54
0.31
42,496
24
3484
'Concentration
•8/1
5.46
3.3
16.8
Mass Load
kg/day
5.57
3.37
17.1
Scrubber
2,409
24
3485
Concentration Mass Load
«g/l kg/day
12.67
1.4
12.6
0.76
0.08
0.76
01
i
u>
H
-------
TABLE 5-8 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 06143
Strean Description
Flow O/hr)
Duration (far*)
Sanple ID No.
TOXIC ORGANICS
4 Benzene
5 Benzidlne
6 Carbon Tetrachloride
7 Chlorobenzene
8 ,2,4-Tri chlorobenzene
10 ,2-Dichloroethaae
11 ,1,1-Trichloroethane
13 ,l-Dlchloroethane
14 ,1,2-Trichloroethane
23 hlorofom
24 -Chlorophenal
25 ,2-Oichlorobenzene
26 ,3-Dlchlorabenzene
(n 27 ,4-Dlchlorobenzene
I 29 J^Dichloroethylene
U) 30 ,2-Tranadicbloroethylene
S) 31 ,2-Dichlorophenol
34 2,4-DiMlhylphenol
37 1,2-Diphenylhydrazlne
38 Ethylbenzene
39 Fluoranthene
44 Hethylene Chloride
45 Methyl Chloride
46 Methyl Broaide
48 Dichlorobroaio»ethane
49 Trichlorofluoraethane
51 ChlorodibroMOaethane
55 Naphthalene
56 Nitrobenzene
57 2-Nitrophenol
58 4'Nitrophenol
65 Phenol
66 fiia(2-ethylhexyl)phthalate
67 Butyl benzyl phthalate
68 Di-N-Butyl phthalate
69 Di-N-Octyl phthalate
70 Diethyl Phthalate
78 Anthracene
81 Phenathrene
84 Pyretic
85 Tetrachloroethylene
86 Toluene
87 Trichloroethylene
121 Cyanide*
Total Toxic Organic!
Recycle
43,214
24
3486
Concentration Haaa
•8/1 kg/day
0.014
<0.01
<0.01
<0.01
<0.01
<0.01
0.31
-------
TABLE 5-8 (CONT)
SEMICONDUCTOR PBQCESS WASTES
ui
I
CO
CO
Stream Description
Flow (1/hr)
Duration (hre)
Sample ID Mo.
TOXIC INORGANICS
114 Antimony
115 Arsenic
117 Beryllium
118 Cadmium
119 Chromium
120 Copper
122 Lead
123 Hercury
124 Nickel
125 Selenium
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titaniun
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
Recycle
43,214
24
3486
/ ~ "
/
/
/
Concentration Mass Load /Concent
0.
<0.
<0.
<0.
0.
0.
<0.
<0.
0.
0.
<0.
0.
1.
2.
0.
0.
0.
0.
<0.
<0.
1
0.
0.
<0
<0
<0
<1
0
<0
<0
<0
•8/1
002
001
001
002
310
046
039
001
135
003
001
001
84
337
041
001
058
546
048
001
23
147
024
034
003
01
5
005
024
002
001
kg/day
t
0.0021
0.322
0.048
0.14
0.003
0.001
1.91
2.426
0.043
0.001
0.06
1.28
0.025
-,
>
0.005
<0.003
0.036
5.3
22
0.037 ',
5.5
22.8 \
/ «8/
<0.001
0.003
<0.001
<0.002
<0.001
0.904
<0.039
<0.001
<0.005
0.007
0.001
<0.001
0.05
0.965
|
t
\ 0.572
> 0.007
0.908
7.0
; <0.049
i 0.002
<0.001
2.11
0.029
<0.034
<0.003
<0.01
344
<0.002
<0.025
0.012
<0.001
<0.003
0.040
49.8
1.2
47,701
24
3487
Hasi Load
kg/day
0.003
\
1.03
0.008
0.001
/ 0.057
I 1.099
Scrubber
2,509
24
3486
Concentration Mass Load
ag/1 kg/day
0.002
0.001
<0.001
<0.002
<0.001
0.005
<0.039
<0.001
<0.005
0.001
<0.001
<0.001
<0.001
0.009
0.655
0.008
1.04
0.0023
0.045
0.014
0.046
57.0
1.37
0.148
0.013
0.009
18.2
<0.049
<0.001
<0.001
5.14
0.031
<0.034
<0.003
<0.01
13.5
<0.002
<0.024
<0.002
<0.001
<0.003
4.4
18.8 1
30
0.0001
0.00006
0.0003
0.00006
0.0005
0.0089
0.0008
0.0005
0.002
0.26
1.13
1.81
0.001
0.002
<0.001
<0.002
<0.001
<0.002
<0.039
<0.001
<0.005
<0.001
0.001
<0.001
<0.001
0.004
0.024
<0.001
0.022
0.032
<0.048
<0.001
<0.001
<0.024
<0.001
<0.034
<0.003
<0.01
*"l 5
M .5
0.005
0.024
0.002
0.001
0.003
0.019
5.3
0
Recycle
43,214
24
3489
Concentration Mass Load
ng/1 kg/day
0.001
0.0021
0.001
0.0041
0.025
0.023
0.0052
0.19
5.5
1.56
-------
TABLE 5-8 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 06143
Ui
I
u>
Strea* Description
Flow ()/l.r)
Duratioo (hrs)
Sample ID Ho.
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Deaand
pH
Recycle
43.214
24
3486
Concentration Mass Load
•g/1 kg/day
0
1.6
22
1.66
22.8
7701
24
3487
Concentration
•g/1
11.67
3.0
1.2
Hass Load
kg/day
13.4
3.43
1.37
Scrubber
2,509
24
3488
Concentration Hass Load
•g/1 kg/day
Recycle
43,214
24
3489
Concentration Haas Load
•g/1 kg/day
0.24
1.6
30
0.01
0.096
1.61
0
0.8
0
0.63
-------
Stream Description
Flow (1/hr)
Duration (hcs)
Sample ID Ho.
TOXIC ORGAK1CS
TABLE 5-8 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 06143
Effluent \
46,002 i
24
3490
Concentration Mass Load
"8/1 kg/day
I
U)
Ul
B
B
4 Benzene ' <0.01
5 Benzidine / <0.01
6 Carbon Tetrachloride
7 Chlorobenzene
8 1,2,4-Tricblorobenzene <0.01
10 1,2-Dichloroethane
II 1,1,1-Trichloroethane 7.7
13 1,1-Dichloroethane
14 1,12-Trichloroethane
23 Chloroforra <0.01
24 2-Chlorophenol <0.01
25 1,2-Dichlorobenzene 0.091
26 1,3-Dichlorobenzene <0.01
27 1,4-Dichlorobenzene 0.015
29 1,1-Dichloroethylene 0.071
30 1,2-Transdichloroethylene
31 1,2-Dichlorophenol
34 2,4-Dimethylphenol
37 1,2-Diphenylhydrazine
38 Ethylbenzene <0.01
39 Fluoranthene
44 Hethylene Chloride <0.01
45 Hethyl Chloride
46 Methyl Bromide
4& Dichlorobronomethane
49 Trichlorofluoronethane
51 Ch Lorodi broraomethane
55 Naphthalene . <0.01
56 Nitrobenzene
57 2-Nitrophenol <0.01
58 4-Nitropbenol 0.043
65 Phenol 0.31
66 Bis(2-ethylhexyl)phthalate <0.01
67 Butyl benzyl phthalate <0.01
68 Di-K-Butyl phthalate <0.01
69 Di-N-Octyl phthalate
70 Diethyl Phthalate ;
78 Anthracene
81 Phenanthrene
85 Tetrachloroethylene R
86 Toluene <0.01
87 Trichloroethylene
121 Cyanide 0.01
Total Toxic Organics 8.23
8.5
0.10
0.017
0.08
0.047
0.34
0.01
9.084
-------
TABLE 5-8 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 06143
Ul
I
u
Strean Description
Flow ll/hr)
Duration (hem)
Sample ID No.
TOXIC INORGANICS
114 Antiwmy
115 Arsenic
117 Beryllium
116 Caoniua
119 Chroaiu*
120 Copper
122 Lead
123 Hercury
124 Nickel
125 Selenium
126 Silver
127 ThalliiM
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluminum
Barum
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Hanganese
Holybdeniw
Palladitui
Platinua
Sodium
Telluriuai
Tin
Titaniua
Vaiiadiiu
VlLriun
Phenols
Total Organic Carbon
Fluoride
Effluent
24
. 3490
Concentration
/ -8/1
<0.001
0.01
<0.001
<0.002
<0.001
1.31
0.282
<0.001
<0.005
0.002
0.001
<0.001
0.128
1.733
3.2
0.011
0.748
7.62
<0.05
<0.012
<0.001
2.29
0.044
<0.035
<0.003
<0.01
554
-------
TABLE 5-8
-------
TABLE 5-9
SEMICONDUCTOR PROCESS WASTES
PLANT 30167
I
CO
CO
StreM Description
How (1/br)
Duration (bra)
ID Mo.
TOXIC ORGANICS
4 Benzene
7 Chlorobenzeoe
8 1,2,4-Trichlorobenzene
11
13
,1,1-Trichloroetbane
,1-Dichloroethane
Supply Water
205020
24
HI 9-0
Concentration Haas Load
•8/1 kg/day
Fluoride Raw
22583
24
Ml 9-2
Concentration Has* Load
•8/1 kg/day
Fluoride Effluent
22583
24
HI 9-3
Concentration Hasa Load
•g/1 kg/day
Total Raw
54167
24
HI 9-4
Concentration Ha»a Load
•ft/1 kg/day
23 blorofom
24 -Chloropbenol
25 ,2*Dichlorobenzene
26 ,3-Dicblorobeuzene
27 ,4-Dichlorofaenzene
29 ,l-Dichloroethylene
31 2,4-Dichlorophenol
37 1,2-Diphenylhydrazine
38 Ethylbenzene
39 Fluorantfaene
44 Hethylene Chloride
51 CblorodiProauM thane
55 naphthalene
57 2-Hitrophenol
58 4-Hitropbenol
65 Phenol
66 Bis(2-ethylhexyl)pfathalate
67 Butyl Benzyl Phtbalate
68 Di-N-Butyl Phthalate
69 Di-N-Octyl Phthalate
70 Diethyl Phthalate
85 Tetrachloroethylenc
86 Toluene
87 Trichloroethylene
121 Cyanide*
Total Toxic Organ!c«
TOXIC INORGANICS
114 Anti atony
115 Arsenic
117 BerylltiM
118 Cadniiui
119 Chraariuai
120 Copper
122 lead
123 Hercury
124 Nickel
12S Seleniiui
0.01
0.03
0.009
0.002
0.049
<0.001
<0.01
<0.01
<0.001
<0.005
<0.01
-------
TABLE 5-9 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 30167
I
OJ
Stream Description
Flow (l/hr)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (CONT)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
Supply Water
205020
Ml 9-0
Concentration Mass Load
wg/1 kg/day
<0.01
0.001
<0.01
0.001
<0.002
56
4.2
0.005
0.541
275.5
20.67
Fluoride Raw
22583
MI 9-2
Concentration Mass Load
ng/1 mg/day
0.024
0.005
<0.01
31.07
0.004
414
760
0.01
0.0027
16.83
0.002
224.4
411.9
Fluoride Effluent
22583
Ml 9-3
Concentration Mass Load
"g/1 kg/day
<0.01
0.012
<0.01
0.282
0.004
255
12.6
0.0065
0.154
0.0022
135.2
20.05
Total Raw
54167
Ml 9-4
Concentration Mass Load
•g/1 kg/day
<0.01
0.012
<0.01
0.116
<0.002
47
0.0156
0.152
61.1
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
2.0
1.2
3
7.8
9.84
5.9
14.8
2.8
5.6
<3
1.2
1.52
3.04
3.1
71
550
11.9
0.168
38.5
298.1
1.0
203
11
9.4
1.3
263.9
14.3
-------
TABLE 5-9 (CONT)
Streaai Description
Flow (1/hr)
Duration (hr«)
Saaple ID Mo.
SEMICONDUCTOR PROCESS WASTES
PLANT 30167
Affluent
205020
24
HI 9-5
Concentration Has* Load
•g/1 kg/day
TOXIC ORGANICS
4 Benzene
7 Chlorobenzene
B 1,2,4-Trichlorohenzene
11 1,1,1-Trichloroethane
13 1,1-Dicbloroethane
23 Chloroform
24 2-Chlorophenol
25 1,2-Dichlorobenzene
26 1,3-Dichlorobenzene
27 1,4-Dichlorobenzene
29 1.1-Dichloroethylene
31 2,4-Dichlorophenol
37 1,2-Diphenylbydrazine
38 Ethylbenzeoe
39 Fluorantbene
44 Hethylene Chloride
51 CblorodibroawBK thane
55 Naphthalene
57 2-Nitrophenol
58 4-NHrophenol
65 Phenol
66 Bia(2-ethylhexyl)phthalate
67 Butyl Benzyl Phtbalate
68 Di-N-Butyl PhthaUte
69 Di-N-Octyl Phthalate
70 Diethyl Phthalate
85 Tetracbloroethylene
86 Toluene
87 Trichloroethylene
121 Cyanide*
Total Toxic Organics
TOXIC INORGANICS
114 Antiawny
115 Arsenic
117 Beryl Liu.
118 Cadauuai
119 ChroauuM
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium.
0.006
0.021
0.006
0.08
0.0505
0.057
0.01
0.011
0.231
<0.001
<0.01
<0.01
<0.001
0.05
0.035
0.005
<0.001
<0.025
0.03
0.10
0.03
0.39
0.25
0.28
0.05
0.05
1.14
0.25
0.17
0.02
*Mot Included In Total Toxic Organic* figure
-------
TABLE 5-9 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 30167
(J\
I
Streau Description
Flow (1/hr)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (COHT)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIOHAL POLLUTANTS
Aluminum
Barium
Boron
CalciiiM
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
205020
MI 9-5
Concentration Mass Load
ng/1 kg/day
<0.01
0.003
<0.01
0.093
0.01
0.46
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
PH
17.4
350
70
8,8
85,62
1722.2
344,4
-------
TABLE 5-9 (CONT)
Stream Description
Flow (1/hr)
DuratiOD (hri)
Sample 10 Ho.
TOXIC ORGANICS
4 Benzene
7 Chlorobenzene
a
11
13
,2,4-Trichlorobenzcoe
,I,1-Tricbloro*thane
,1-Dichloroethane
23 Chlorofon
24 -Chloropbenol
25 ,2-Dicblorobenzene
26 ,3-Dichlorobenzene
27 ,4-Dichlorobenzene
29 ,l~Dichloroethylene
31 2,4-Dichloropbenol
37 1,2-Diphenylhydraziae
38 Ethylbenzene
39 Fluorantheae
44 Methylene chloride
51 Cfalorodibroatoawtbane
55 Haphthalene
57 2-Mitropbenol
58 4-Hitropbenol
65 Phenol
66 BU(2-ethylhexyl)phtbal«te
67 Butyl benzyl phthalate
68 Di-N-butyl pbtbalate
69 Di-M-octyl phthalate
70 Diethyl phthalate
85 Tetrachloroetbylene
86 Toluene
87 Trlchloroethylene
121 Cyanide*
Total Toxic Organic!
TOXIC INORGANICS
114 Antiaumy
115 Arsenic
117 Berylliuai
118 CadaiuB
119 Cbroaiua
120 Copper
122 Lead
123 Mercury
124 Nickel
125 SelenitM
Industrial Effluent
189250
24
3314
•g/1
kg/day
<0.001
<0.01
<0.01
<0.01
<0-01
<0.01
<0.01
0.016
<0.01
<0.01
<0.01
<0.01
<0.01
0.013
<0.01
0.006
<0.04
0.045
<0.003
0.014
0.002
0.015
0.115
0.158
0.040
<0.003
0.108
<0.003
0.073
0.059
0.027
0.159
0.064
0.009
0.068
0.522
0.718
0.182
0.491
SEHICONDUCTOR PROCESS WASTES
PLANT 30167
Industrial Raw
189250
24
3315
•«/l kg/day
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
0.001
<0.01
<0.01
<0.01
<0.01
0.012
<0.01
0.005
<0.04
0.017
<0.003
0.010
0.002
0.018
0.027
0.045
<0.010
0.003
0.054
<0.003
0.005
0.055
0.023
0.083
Fluoride Raw
20187
24
3316
•g/1
kg/day
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
0.016
<0.01
<0.01
<0.01
<0.01
0.001
0.047
<0.01
0.002
<0.04
0.076
0.045
0.009
0.082
0.123
0.204
0.014
0.245
<0.003
0.004
0.002
0.030
19.00
1.742
3.675
0.002
1.956
< 0.00 3
0.008
0.023
0.001
0.032
Fluoride Effluent
20187
24
3317
•g/1 kg/day
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
0.006
<0.01
<0.01
<0.01
<0.01
<0.01
0.042
<0.01
0.001
<0.04
0.049
0.002
0.001
0.01S
9.205
0.844
1.780
0.001
0.948
<0.003
<0.003
<0.001
<0.001
0.128
0.050
0.018
0.001
0.121
<0.003
0.003
0.020
0.001
0.024
0.062
0.024
0.009
0.001
0.059
*Not included in Total Toxic Orgauica figure
-------
Stream Description
Flow (1/hc)
Duration (hrs)
Sample ID Mo.
TOXIC INORGANICS (COST)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
HOH-COHVEHT10HAL POLLUTANTS
Aluminum
Ln Barium
I Boron
** Calcium
Coba1t
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium :
Tin
Titanium
Vanadium
Vttrium i
Phenols
Total Organic Carbon •
Fluoride \
CONVENTIONAL POLLUTANTS \
Oil & Grease \
Total Suspended Solids \
Biochemical Oxygen Demand
PH
IBWiift'WMfi
/ 189250
/ 24
/ 3314
Concentration
/ »g/l
i
0.025
0.120
0.358
0.955
1.352
0.089
0.353
618.62
0.050
7.571
55.39
0.217
0.065
488.93
0.121
<0.030
0.385
0.064
-------
TABLE 5-9 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLAffT 30167
ut
I
Streaa Description
now (I/fcr)
Duration (hra)
10 Ha.
TOXIC OBGADICS
4 Benzene
7 Chlorobeozeoe
6 1,2,4,-Trichlorobeozene
11 1,1,1-Trichloroethane
13 1,1-Dicliloraethane
23 Chlorofora
24 2-Ckloropbcnol
25 1,2-DichlorobeMene
26 1,3-Dicblorobeozeue
27 1,4-Dicblorobenceiie
29 1,1-DicbIoroethylene
31 2.4-Dichlorophewil
37
3ft etbylbeoxene
39 FluoraBtbeae
44 Hethyteae
SI
55
57 2-HiCropbenol
5B 4-Nitropbcnol
65 Phenol
66 |ia(2-etbylbexyl)pbthaUt«
67 Butyl benzyl ptttbalate
68 Oi-H-butyl pullulate
69 Di-H-octyl pbthalate
70 Diethyl nhthalate
85 TetrachloroethyleAe
B6 Toluene
87 Tricbloroethyleoe
111 Cyanide*
Total Toxic Organica
TOXIC INORGANICS
114 aotinooy
115 Araenic
1)7 terylliua>
lift CadadiM
119 Cbroniua
120 Copper
122 Lead
123 Hercury
124 Nickel
125 Seleniuai
fllicM Slurry
205*
24
3318
Concentration Has* Load
•1/1 kg/day
-------
Stream Description
Flow (1/hr)
Duration (bra)
Sample ID No.
TOXIC INORGANICS (COHT)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Hagnesiun
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
TABLE 5-9 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 30167
Silicon Slurry
2059
24
3318
Concentration Mass Load
»g/l kg/day
<0.002
<0.020
0.047
0.156
<0.001
<0.001
1.194
8.156
<0.001
<0.001
6.457
<0.00t
<0.025
148.224
0.037
<0.03
<0.001
<0.001
0.011
70.0
-------
TABLE 5-10
SEMICONDUCTOR PROCESS WASTES
PLANT 35035
Strean Description
Flow (1/hr)
Duration (hrs)
Sample ID Ho.
TOXIC ORGAN1CS
4 Benzene
7 Chlorobenzene
6 1,2,4-Trichlorobenzene
11 1,1,1-Tricbloroethaoe
13 I,i-Dichl»roethane
23 Chlorofon
24 2-Cbloropheool
25 1,2-Dichlorobenzene
26 l,3-Dichloroben2ene
27 1,4-Dichlorobenzene
29 1,1-Dichloroethylene
31 2,4-Dichlorophenol
37 1.2-Diphenylhydrazine
38 Ethylbenzene
39 Fluoranthene
44 Hetbylene chloride
51 Cnlorodibroatome thane
55 Naphthalene
57 2-Nitrophenol
58 4-Nitropbenol
65 Phenol
66 Bis(2-ethylhexyl)phthalate
67 Butyl benzyl phthalate
68 Di-N-but'yl phthalate
69 Di-H-octyl phthalate
70 Diethyl pbthalate
71 Dimethyl phthalste
85 Tetracbloroethylene
86 Toluene
87 Trichtoroefchyleoe
121 Cyanide*
Total Toxic Organic*
TOXIC INORGANICS
114 Ant lawny
115 Arsenic
117 Becylliuai
118 Cadaiiw
119 CbroMitw
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
B = present in sanple blank
I = interferences present
ipc\,Jed In Total Toxic Organlea figure*
Scrubber
50
24
3718
Concentration Haas Load
•g/1 kg/day
0.036 B 0.00004
<0.01
<0.01
<0.01 B
0.097 0.0001
3.10 0.004
5.7 B 0.007
<0.01
B
<0.01
<0.01 B
<0.01
-------
TABLE 5-10 (OONT)
SEMICONDUCTOR PROCESS WASTES
PLAHT 35035
Strean Description
Flow (1/hr)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (CONT)
126 Silver
127 Thallium
m Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluminum
Bariua
Boron
Calciun
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Lithium
Phenols
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Crease
Total Suspended Solids
Biochemical Oxygen Demand
P»
Scrubber
50
24
3718
Concentration
•g/1
<0.001
<0.001
<0.001
0.019
0.253
<0.001
0.372
5.80
<0.05
<0.002
<0.001
8.33
0.033
<0.035
<0.003
<0.003
27.20
0.01
<0.025
0.004
0.013
<0.003
0.006
135.0
177.0
119
5.0
24.8
^471
Mass Load
kg/day
0.000026
0.0003
0.0004
0.00004
0.00001
0.000004
0.00002
0.000007
0.162
0.21
0.143
0.006
0.03
0.57
Recycle «*f*ient *-
6865 / 4778
24 24
3719
Concentration
«g/l
<0.001
<0.001
<0.001
0.004
0.022
<0.001
0.215
<0.005
<0.05
<0.002
<0.001
0.077
<0.001
<0.035
<0.003
<0 . 003
<1.50
<0.006
<0.025
<0.002
0.002
<0.003
0.001
<0.001
1.2
0.35
1.4
0
0
3720
Mass Load Concentration
kg/day »g/l
0.002
<0.001
0.035
0.0006 0.367
0.004 0.21
0.001
0.03 0.639
10.1
<0.054
I
0.04
1.82
<0.001
<0.038
0.006
<0.003
1860
<0.015
<0.027
0.002
0.0003 0.006
<0.004
0.00016 0.063
0.31
0.20 102
0.058 16.3
0.23 1.2
1.3
0 0
Mass Load
kg/day
0.0002
0.004
0.041
0.024
0.0001
0.07
0.005
0.0007
0.0002
0.0007
0.007
0.36
11.7
1.87
0.138
0.15
0
Recycle
6469
24
3721
Concentration
»g/l
<0.00l
<0.001
0.014
0.02
0.041
<0.001
0.186
<0.005
<0.05
<0.002
<0.001
0.121
<0.001
<0.035
<0.003
<0.003
<1.5
<0.006
<0-025
<0.002
0.004
<0.003
0.001
<0.001
0.8
0.21
0.0
0.0
Mass Load
kg/ day
0.003
0.004
0.009
0.04
0.0009
0.0002
0.18
0.05
I = interferences present
-------
TABLE 5-10 (CONT)
I
t>
00
Strea* Description
Flow (1/br)
Duntion (bra)
Sample ID Ho.
TOXIC ORCANIC8
4 Benzene
7 Cblorobenzena
8 ],2l4-Trifrblorob«>Miia'
11 1,1,1-Tricbloroetbane
13 1,1-Dlchloroetfaane
23 Cblorofon
24 2-Cbloropbenol
25 l,2-Dicblorob*nzene
26 1,3-Dicblorobeazene
27 1,4-Dicblorobtnxen*
29 1,1-Dicbloroethylene
31 2,4-Dlcblorophenol
37 1,2-Dipnenylbydrazlne
38 Etbylbensene
39 Fluoraathene
44 Hethylene cbloride
51 CblorodibroaMMetbaae
55 Naphthalene
57 2-Nitropbenol
58 4-Hitropbenol
65 Phenol
66 Bia<2-etbylhexyl)phthalate
67 Butyl benzyl pbtbalate
68 Di-M-butyl
69 Di-M-octyl
70 Diethyl phtbalate
71 DiMtbyl pbthaiate
85 Tetracbloroetbylene
86 Toluene
87 Tricnloroetbylene
121 Cyanida*
Total Toxic Organ!ca
TOXIC INORGANICS
114 Antiwmy
115 Araenic
117 BerylliiMB
118 Cadaiiuai
119 Cbroaiiua]
120 Copper
122 Lead
123 Hercury
124 Michel
125 SeUniiu
ElfltMMt
8740
24
3722
Concentration
5.200
0.0055
0.0015
0.0027
0.0075
0.086
0.018
0.263
0.013
0.0022
0.0002
0.013
0.0087
<0.005
S.621
0.10
I
<0.001
0.004
0.005
0.049
<0.04
<0.001
0.022
0.044
Han Load
SEMICONDUCTOR PROCESS WASTES
PUOT 3M3S
tecycl*
7904
24
3723
Concentration Haas Load
•I/I k«/day
1.091
0.0012
0.0003
0.0006
0.0016
0.018
0.003A
0.055
0.003
0,0005
0,00004
0,003
0.0018
1.180
0.02
0.0006
0.001
0.01
0.005
0.009
0,0096
0.0009
0.0054
0.0002'
0.013
0.046
0.0011
0.003
0.0009
0.0003
0.0072
0.0049
<0.005
0.0925
0.002
I
<0.001
<0.002
<0.001
<0.002
<0.04
<0.001
<0.005
0.003
0.0018
0.0002
0.001
0.0002
0.00006
0.0014
0.00093
0.0176
0.0004
0.0006
BfCiuMt
7681
24
3724
Concentration Haaa Load
•8/1
5,300
0.0092
0.0083
0.0032
0.018
0.00004
0.0025
0/0087
0.0002
0.00057
0.0005
0.011
0.130
0.024
0.44
0.0057
0.0012
0.0002
0.0085
0.0066
<0.005
5.97
I
I
-------
TABLE 5-10 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 35035
Oi
1
Stream Description
Flow (1/hr)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (CONT)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluminum
Barium
Boron
Calciun
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Lithium
Phenols
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
pit
^Effluent"
8740
24
3722
Concentration
.«/i
0.001
<0.001
0.184
0.409
0.263
0.004
0.372
21.4
<0.05
I
0.483
3.79
0.002
0.046
0.004
0.003
1130
I
<0.025
0.006
0.013
<0.003
0.018
0.53
78
8.6
0.0
2.4
0.0
Mass Load
kg/day
0.0002
0.039
0.085
0.055
0.0008
0.078
O.IOI
0.0004
0.0096
0.0008
0.0006
0.0013
0.0027
0.0038
0.111
16.36
1.80
0.503
0
Recycle
7904
24
3723
Concentration
•8/1
0.002
<0.001
<0.001
0.007
<0.01
<0.001
0.015
-------
Ul
1
U1
o
Slrea« Description
Flow (1/hr)
Duration (bra)
S*apU III No.
TOXIC ORGAN 1CS
7 Cutorobeiizeiie
, 2,4-Tr1chIufobenzene
, 1, 1-Tricbloroetbaoe
,1-Dicbloroethaue
8
II
13
23 Chloroform
24
25
26
27
29
-Cblarouliepol
,2-Dithlorobenzene
,3-DicblorObeuzene
,4-Dicblorobenzene
, 1-Dicblocoetbylcne
31 2.4-Dii:blorophenol
37 l,2-Diphenylliydr»zine
38 Etbylbenzene
3*1 Fluor»uLbe»e
44 Hetliyleiie cblocide
57 2-MiLropbeuol
58 4-Hitroubenol
62 U-iiiLr
6S rbenol
66 Bia<2-
67 Butyl benzyl pbthalate
6B Oi'N-butyl |>bth«late
69 Di-N-oclyl pbthalate
70 Uietbyl pbth»Ute
85 TeiracblocoetLylene
86 Toluene
87 Tricbloro«tbvlene
89 Aldrln
90 DielJrli.
101 llcptacliloc e pox Id it
102 Al|>lui BUG
103 Beta BIIC
ItH Cauwtu BIIC
|O5 Delta BIIC
121 CytuilJe
Xylcae
Tutdl Tonic Organic*
TOXIC IKOKGAN1CS
1)4 Ani inoiiy
IIS AvBctiic
117 Betyllima
118 CddwliiM
119 CbrowiuH
TABLE 5-MI
SEMICONDUCTOR PROCESS WASTES
Fluoride Effluent
337
24
3779
Concentratton
-8/1
<0.01
<0.01
<0.01 B
-------
Ln
I
01
h-1
Stream Description
Flow (l/hr)
Duiitt ion (tirs)
Sample II) No.
TOXIC INORGANICS (COHT)
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Se leu Hits
126 Silver
127 Ilia I limn
120 Zinc
Total Toxic Inorganics
NOH-CONVKNTIONAL POLLUTANTS
Aluminum
Ha r i uia
bo i on
Ca I c i UIB
Cobalt
Go lit
I run
Magnesium
Ha n ^it nc at:
Palladium
I'lal hiitm
Soil i urn
Tel luriuiu
Tin
Ti tatiiiKn
Vanadium
VLlriiim
t'lienol a
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Otl & Greutie
Total Suspended Sol Ida
Biochemical Oxygen Demand
TABLE 5-11 (CONT)
SEMICONDUCTOR PROCESS WASTES
16133
Fluoride Effluent
337
24
3779
Concentration
0.16
0.045
0.011
0.22
<0.005
0.015
<0-03
0.087
0.54
0.411
<3.0
425.23
<0.02
0.029
0.042
0.04
<0.05
<0.02
<0,02
<0.001
1537
20.1
2,0
176
3700
\
lass Load '
kg/day
0.00)3
0.00036
0.00009
0.0018
0.00012
0
0.0007
0.0044
0.003
0.0002
0.0003
0.0003
12.4
0.16
0.016
1.42
29.9
272.35J ' *
24
3780
Concentration Mass Load Concen
o.g/1
0.115
0.085
<0.001
0.531
<0.005
0.005
<0.03
0.04
0.844
0.231
0.023
0.248
153.4
0.01,
0.051
0.092
12.6
0.011
0.035
<0.04
<0.05
199.5
<0.02
0.006
0.10S
0-. 105
0.023
0.021
10
5.42
2.4
2
\ 18
kg/day ng
0.
0.
3.
0.
5.
1.
0.
1.
-
0.
0.
0.
-
0.
0.
: 0.
• 0.
0.
: 0.
0.
65.
35.
' 15.
75
56
47
26
49
51
15
62
065
33
60
072
229
039
686
686
150
137
4
4
7
13.07
117.
7
3.746
0.150
<0.001
0.20
0.007
0.03
<0.03
0.429
412.28
320.06
697
825.18
0.14
<0.02
<0.04
<0.05
<0.02
11.32
0.103
2177
50,000
5.1
5760
243
Fluoride Raw
189
24
3781
> Fluoride Effluent
lass Load
kg/day
0.010
0.0004
0.0005
0.00002
0.00008
0.001
1.109
0.86
1.87
-
0.0004
481
24
3782
Concentration
"8/1
0.09
0.04
<0.00)
0.20
<0.005
0.020
<0.03
0.432
1.855
0.411
<3.0
332.94
0.02
<0.02
0.044
<0.04
<0.05
Ha SB Load
kg/day
0.001
0.0005
0.002
0.002
0.005
0.023
0.005
0.0002
0.0005
0.03
<0.02
<0.02
0.00028 0.004
7.465 9S7
134.4 24
0.014 9.8
15.483 1930
0.653 2275
0.00005
11.05
0.28
0.113
22.28
26.26
-------
TABLE 5-It (CONT)
&tre» Deacriutiou
Flow (I/In)
Duration (be*)
Sa«i>le ID No.
TOXIC OKCAN1CS
4 Bcozeue
7 Chlorubeitzene
24
3783
Concentration
Han Load
SEMICONDUCTOR PROCESS WASTES
PLANT 36133
Fluoride law
189
24
3785
Concentration Maia Load
•8/1 kg/day
Fluoride Effluent
281 285,800
24 24
3786 3787
Concentration Han Load Concentration
•I/I kg/day •!/!
H*» Load
kg/day
8
11
13
,2,4-Tr i ch1orobcnxene
,1,1-Trlcbloroethene
,1-Dichloroetbaue
23 blorofon
24 -Chlorophcnol
25 ,2-Dichlorobeozene
26 ,3-Uiculorobenzene
27 ,4-Dlchlorabeiizen«
29 ,1-biibloroetfayUue
31 2,4-DU'blorouhenol
37 l,2'[ll|kltcuyluydraxinc
38 Etbylbcuzene
39 Fluor*utheue
44 Hetbylene ckloride
51 Chi o cod ibrowwe thane
55 Ma|tliib*Une
57 2'Hitro|>b«nol
58 A-NUrophenol
62 H-nitroaodipbenylaaine
65 Pbenol
66 Bls(2-t:thylb>:xyl)pbtbalate
67 Butyl beiizyrpbthaUte
68 Di-N-bulyl |>bthalate
69 I)t-H-octyl |>hth«Ute
70 Dielhyl plitkalate
85 Tdracbloroetliylene
86 Tuluewe
87 Ttichloroetltyleue
xylcne
B« Aldciu
90
101
102 Alpha BIIC
103 Beta BIIC
104 GaMMa BHC
105 Delta BIIC
121 Cyanld«*
Total
epoxltle
-------
Ul
1
Ul
UJ
Stream
Flow (l/lir)
Duration (bra)
111 No.
TOXIC INORGANICS (CONT)
120 Copper
122 Lead
123 Mertury :
124 Nickel
125 Selenium
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluminum
Barium
Huron
Coital I
Gold
Iron
Magnesium
Manganese
Molybdenum
I1 a 1 1 ad i uiu
I'lalimuu
Sot) nun
Te 1 1 u r i uiu
Tin
Titanium
Vanadium
Vttriuia
Pile no Is
Tula I Organic Carbon
fluoride
CONVENT IUNA1. POLLUTANTS
Oil & Crease
Total SutiptMuled Solids
Biochemical Oxygen Demand
24
3783
Concentration
•8/1
0.12
0.083
0.012
0.523
<0.005
0.005
<0.03
0.03
0.84
0.215
0.022
0.289
154.8
0.011
0.056
0.081
13.22
0.011
0.037
<0.04
<0.05
225.62
<0.02
0.002
0.008
0.105
0.022
0.014
11.4
12
4.2
1.0
17
Mass Load
kg/day
TABLE 5-11 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 36133
Fluoride Raw
189
24
3785
Concentration Mass Load
•g/1 kg/day
0.002
0.00001
0.00002
0.00002
0.00002
0.0004
0.062
0.39
0.09
0.81
0.56
0.08
3.51
0.03
0.20
5.64
1.44
0.15
1.94
0.07
0.38
0.54
0.07
0.25
0.013
0.054
0.71
0.15
0.094
76.61
80.65
28.23
6.72
114.25
1.07
<0.02
0.005
0.09
0.007
0.01
<0.003
0.179
27.726
173.83
'.1.0
215.29
<0.02
<0.02
0.11
<0.04
<0.05
<0.02
10.83
0.105
967
27,500
3.6
2540
87
0.0002
0.024
0.0002
2.16
61.38
0.008
5.67
0.19
Fluoride Effluent
281
24
3786
Concentration Mass Load
"8/1 kg/day
0.08
<0.02
0.01
0.18
<0.005
0.02
<0.03
0.136
0.518
0.793
O.OO
578.83
<0.02
<0.02
0.032
<0.04
<0.05
<0.02
<0.02
0.015
655
28.8
5.0
136
1475
285,800
24
3787
Concentration
0.0004
0.00006
0.001
0.0001
0.0008
0.0029
0.004
0.0002
0.0001
4.42
0.19
0.033
0.917
9.95
0.134
0.10
0.011
0.596
0.009
0.005
<0.03
0.038
0.957
0.231
0.023
0.226
174.10
0.009
0.04
0.089
13.55
0.011
0.043
<0.04
<0.05
257.12
<0.02
0.0
0.007
0.109
0.028
0.006
i.a
9.0
3.39
2.7
12
Mass Load
kg/day
0.92
0.69
0.07
4.09
0.06
0.03
0.26
6.561
1.58
0.16
1.53
0.06
0.27
0.61
0.075
0.295
0.0
0.048
0.75
0.19
0.041
12.35
61.73
23.25
18.52
82.3
-------
TABLE 5-12
SEMICONDUCTOR PROCESS WASTES
PLANT 36135
Streaa Description
Flow (1/hr)
Duration (bra)
ID Ho.
Ran
57502
24
3763
Concentration
•g/1
Maea Load
kg/day
128,394
24
3764
Concentration Haaa Load
•g/1 kg/day
Raw
57502
24
3765
Cfflaent
129,206
24
3766
Concentration Haas Load /Concentration Haaa Load
•g/1 kg/day / ag/1 kg/day
I
cn
TOXIC ORGANICS
4 Benzene
7 Cblorobenzeoe
ft 1,2,4-TrichIorobenxene
11 1,1,1-Tricbloroetfaane
13 1,1-DichIoroetbane
23 Chloroform
24 2-Cbloropbeool
25 1,2-Dichlorobenzene
26 1,3-Dichlorobeozene
27 1,4-Dicblorobenzene
29 1,1-Dichloroetbylene
31 1,2-Dicbloropbenol
37 1,2-Dipbenylbydraz'ine
36 Etbylbenzeoe
39 Fluorantheoe
44 Hethyteoe Chloride
51 ChlorodibrcMnoMc thane
55 naphthalene
57 2-Hitrophenol
58 4-Nitropbenol
65 Phenol
66 Bia(2-etbylbexyl)phthalate
67 Butyl benzyl phthalate
68 Di-H-Butyl phthalate
69 Di-N-Octyl phthalate
70 Diethyl Pfathalate
85 TctrachloKoethylene
86 Toluene
87 Trichloroetbylene
121 Cyanide*
Toxic Organic*
TOXIC INORGANICS
114 Aatiaony
115 Arsenic
117 Beryllium
118 CadaiuB
119 ChroMiiMi
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
<0.005
<0.00I
<0.005
0.001
0.008
0.024
0.232
0.09
<0.001
1.659
<0.005
0.013
0.04
0.0014
0.011
0.033
0.32
0.12
2.29
<0.001
<0.005
0.001
0.007
0.048
0.051
0.098
<0.001
0.531
<0.005
0.003
0.022
0.148
0.157
0.30
1.64
B = preaent In sample blank
*Not included In Total Toxic Organlca figure
<0.01 B
0.015
<0.01 B
0.070
<0.01
B
0.025 B
<0.01
<0.005
0.11
<0.001
<0.005
0.001
0.008
0.028
0.347
0.096
0.01
0.815
<0.005
<0.01
0.021 0.01
0.097
<0.037
<0.01
0.03
0.009
0.148
0.001
0.01
0.039
0.479
0.132
0.014
1.12
0.01
0.011
0.028
0.058
-------
TABLE 5-12 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 36135
Ln
I
Ul
Ul
Stream Description
Flow (1/hr)
Duration (hra)
Sample ID No.
TOXIC METALS (CONT)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
(JON-CONVENTIONAL POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
PH
Raw
57502
24
3763
Concentration
»g/l
<0.006
<0.05
0.04
2.054
0.193
0.017
0.148
16.4
0.011
0.874
5.804
0.01
0.022
14.74
0.033
0.006
0.048
0.012
0.0023
27
9.08
1.0
1.0
1.6
Mass Load
kg/day
0.055
2.830
0.266
0.023
0.20
0.015
1.21
0.014
0.030
0.046
0.008
0.066
0.017
0.0032
37.26
12.53
1.38
1.38
2.21
Concent n
mg/1
0.006
0.09
0.022
0.854
0.269
0.019
0.114
187.700
0.008
0.086
13.95
0.006
0.024
53.68
0.016
0.008
0.124
0.03
0.0128
11
14.5
2.8
1.0
7.2
affluent
128,394
24
3764
ition Masa Load
kg/day
0.018
0.277
0.068
2.633
0.83
0.059
0.35
0.025
0.27
0.018
0.074
0.05
0.025
0.38
0.092
0.039
33.9
44.68
8.63
3.08
22.19
Raw
57502
24
3765
Concentration
•g/1
0.006
<0.05
0.083
1.394
0.225
0.018
0.106
16.29
0.018
1.296
5.847
0.013
0.026
14.68
0.018
0.008
0.052
0.016
0.0057
9.0
21.5
Haas Load
kg/day
0.008
0.115
1.918
0.31
0.025
0.146
0.025
1.79 ,'
0.018
0.036
0.025;
0.011
0.072
0.022
0.0079
12.42:
29.67
r-
i
I
1
Concent r
\ »g/
\
i
JO. 009
10.09
/ 0.025
0.874
i 0.299
0.018
i 0.285
; 176. 40
0.009
0.076
13.57
0.006
0.028
66.18
0.011
0.009
0.121
0.03
0.0019
4.0
11.7
19.8
27.3
3.6
5.8
11.16
Effluent"**.
129,206
24
3766
ition Mass Load
L kg/day
0.028
0.279
0.078
2.706
0.927
0.056
0.884
0.028
0.236
0.019
0.087
0.034
0.028
0.375
0.09
0.0059
12.4
36.28
17.99
11.16
-------
Ul
I
cr.
Stream Description
Flow (1/hr)
Duration (bra)
Sample ID Ho.
TOXIC ORGAHICS
4 Benzene
7 Chlorobenzene
,2,4-Trichlorobenzene
,1,1-Trichloroethaae
8
11
23 hlorofora
24 -Chloropbenol
25 (2-Dichlorobcazene
26 ,3-Dicblorobenzene
27 ,4-Dicbloroben*eoe
29 ,l-Dichloroetbyleoe
31 ,2-Dichlorophenol
37 ,2-Diphenylbydrazine
38 Ethylbenzene
39 Fluoraathene
44 Hethylene Chloride
51 ChlorodibrOMOMthane
55 Naphthalene
57 2-Nitropbenol
58 4-Nitrophenol
65 Phenol
66 Bia(2-ethylhexyl)phthaUte
67 Butyl benzyl pbtbalate
68 Di-H-Butyl pbthalate
69 Di-N-Octyl phthalate
70 Diethyl Phthalate
85 Tetracbloroethylene
86 Toluene
87 Trichloroetbvlene
121 Cyanide
Total Toxic Organica
TOXIC INORGANICS
114 Antiaony
115 Arsenic
117 Berylliiw
118 Cadaiun
119 ChroHiuM
120 Copper
122 Lead
123 Hercury
124 Nickel
125 Seleitiua
taw
55760
24
3595
Concentration
•B/l
<0.01
<0.01
-------
TABLE 5-13 (CONT)
SEMICONDUCTOR PROCESS HASTES
x'""
/LANT 36136
Ul
I
cn
Strean Description
Flow (1/hr)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (CONT)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluminum
Bar urn
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
PH
Raw
55760
24
3595
Concentration
»g/l
<0.005
<0.025
0.130
2.815
3.177
0.027
0.132
5.196
0.013
3.725
2.132
0.144
0.024
140.516
0.200
0.027
0.072
<0.001
0.179
202
99.38
20.1
72
330
Mass Load
kg/day
t
I
0.174
3.76 :
4.25 ;
0.036 ,
0.177
0.017
i
4.985;
;
0.193^
0.032
0.268
0.036
0.096
0.24
270.3
133
26.90
96.35
441.62 '
'
/
; Concent
mg
<0.003
0.065
0.027
1.081
0.227
0.012
0.102
243.708
0.014
0.088
6.794
0.021
0.018
38.906
0.012
0.007
0.064
0.002
0.112
191
10.50
5.2
56
300
59141
24
3596
int'
Mass Load
kg/day
0.092
0.038
1.54
0.322
0.017
0.145
0.02
0.125
0.03
0.026
0.017
0.01
0.091
0.003
0.16
271.1
14.9
7.38
79.5
425.8
Raw
53412
24
3598
Concentration
•8/1
<0.005
<0.025
0.289
4.27
5.749
0.016
0.431
3.544
0.016
3.760
1.5
0.209
0.026
21.732
0.168
0.033
0.109
<0.001
0.038
193
148.75
7.3
80
290
1
\
Mass Loaq
kg/day (
i
0.370 :•
5.47
7.37
0.02
0.552 !
0.02
4.82
0.267
0.033
i
0.215
0.042
0.14
0.049
247.4
190.68
9.36 i
102.55
371.75
Concent
•«
0.006
0.035
0.025
0.905
0.292
0.01
0.198
171.508
0.007
0.106
4.93 '
0.025
0.018
98.066
0.028
0.006
0.054
0.033
0.115
130
12
6.9
44
•250
57963
24
3599
tlon Haas Load
8/1 kg/day
0.008
0.049
0.035
1.26
0.406
0.0139
0.275
0.0097
0.147
0.035
0.025
0.039
0.008
0.075
0.046
0.16
180.8
, 16.7
9.6
61.21
347.8
-------
TABLE 5-13 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 36136
Ul
I
CO
Strew* Description
Flow (1/hr)
Duration (bra)
Sanple ID No.
TOXIC ORGANICS
It Benzene
7 Cblorobenzene
8 ,2,4-Trichlorobenzene
11 ,1,1-Trichloroethane
13 ,1-Dicfaloroethaoe
23 hlorofom
24 -Chlorophenol
25 ,2-Dichlorobenzene
26 ,3-Dichlorobenzene
27 ,4-Dichlorobenzene
29 ,1-Dicbloroetbylene
31 ,2-Dichlorophenol
37 ,2-DiphenyLhydrazine
38 Ethylbenzene
39 Fluoranthene
44 Hethylene Chloride
51 ChlorodibroaKMKthane
55 Naphthalene
57 2-Nitrophenol
58 4-Nitrophenol
65 Phenol
66 BiB(2-ethylheityl)phthaUte
67 Butyl benzyl phthalate
68 Di-N-Butyl phthalate
69 Di-N-Octyl phthalate
70 Diethyl Phthalate
71 Diaethyl phthalate
85 Tetrachloroetbylene
86 Toluene
87 Trichloroethylene
121 Cyanide*
Total Toxic Organic*
TOXIC INORGANICS
114 Antimony
115 Arsenic
117 Berylliuai
118 Cadmium
119 Chroatiuai
120 Copper
122 Lead
123 Hercury
124 Nickel
125 Seleniiw
Raw
61225
24
85110
Concentration
Havi Load
kg/day
Has! Load
kg/day
<0.005
<0.005
<0.003
<0.001
0.007
0.038
0.691
0.175
<0.001
1.039
<0.003
<0.005
0.010
O.OS6
1.02
0.257
1.527
*Not Included In Total Tonic Organic* figure
0.003
0.028
0.048
0.088
0.004
0.846
-------
TABLE 5-13 (CONT)
SEHICONDUCTOR PROCESS WASTES
PLANT 36136
Ul
I
Ol
Stcean Description
Flow (1/br)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (COHT)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluminum
Darum
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttriun
Phenols
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
pll
Raw
61225
24
85110
Concentration
•8/1
<0.005
<0.025
0.183
2.133
2.838
0.047
0.233
7.6
0.008
2.065
2.507
0.126
0.026
<0.025
<0.03
125.816
<0.02
0.076
0.020
0.071
<0.001
0.114
76
83.75
7.1
72
140
Effluent
[
i
il
Mass Load
kg/day ;
0.269 !
3.14
4.17
0.069
0.34
0.012
3.03
0.18S
0.038
0.112
0.029 ;
0.10 I
0.168
111.67
123.1
10.4
105.8
205.7
61211
24
85111
Concentration
»g/l
0.006
0.065
0.031
0.795
0.253
0.013
0.144
253.408
0.012
0.146
6.462
0.023
0.015
<0.025
<0.03
52.456
<0.02
0.02
0.007
0.06
0.028
0.181
136
17.50
7.8
60
330
Mass Load
kg/day
0.0088
0.095
0.046
1.17
0.37
0.019
0.212
0.018
0.214
0.034
0.022
0.029
0.01
0.088-
0.041
0.266
199.8
25.7
11.46
88.14
484.8
-------
TABLE 5-14
Stream Description
Flow (1/hr)
Duration (bra)
Simple ID No.
TOXIC ORGANIC8
4 Benzene
7 Cnlorobencene
,2,4-Trichlorobeozene
Cleaning Solution Rinse
Ha» Load
kg/day
SEHICOHDUCTOR PROCESS WASTES
PLANT 41061
Oxide Etch Rinse
Concentration
.1/1
a
11
13
,1,1-Trichlaroetbane
,1-Dichloroetbane
23 Chloroform
24 -Chloropbenol
25 ,2-Dicfalorobenxene
26 .3-Di chlorobenzene
27 ,4-Dichlorobenzene
29 ,1-Dichloroethylene
31 ,2-Dichlorophenol
37 ,2-Dipbenylbydraiine
38 Etbylbenzene
,„ 39 Fluoranthene
I 44 Hetfayleoe Chloride
en 51 Chlorodibromomethane
O 55 Naphthalene
57 2-Hitropbenol
58 4-Hitropbeool
65 Phenol
66 Bis(2-ethylbexyl)phtbalate
67 Butyl benzyl phtbalate
68 Dl-N-Butyl phthalate
69 Di-N-Octyl pbtbalate
70 Dietbyl Phtbalate
85 Tetracbloroethylene
86 Toluene
87 Trlchloroetbylene
121 Cyanide*
Total Toxic
<0.006
TOXIC tNO»«AKICS
114 AntiHony
115'Arienic
117 Beryllium
118 CadBitui
119 CbroBiiw
120 Copper
122 Lead
123 Hercury
124 Nickel
125 Seleniua
3262
Concentration Haas Load
•g/1
<0.01
0.034
<0.01
<0.01
<0.01
<0.01
-------
TABLE 5-14 (CONT)
Stcean Description
Flow (1/hr)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (CONT)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluminum
Barum
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybden'im
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenola
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
Cleaning Solution Rinse
SEMICONDUCTOR PROCESS WASTES
PLANT 41061
Oxide Etch Rinse
Resist .Strip Rlnee
Metal Etch Rinse
3263
Concentration
"g/1
Hass Load
kg/day
3262
Concentration
•g/1
<0.002
<0.02
0.005
0.094
0.005
Mass Load
kg/day
3260
Concentration
"g/1
<0.002
<0.02
0.002
0.091
0.002
3264
Mass Load Concentration
kg/day Bg/1
<0.002
<0.02
0.002
0.091
0.002
Mass Load
kg/day
0.02
<0.01
0.026
<0.01
-------
TABLE 5-14 (CONT)
SEHICONDUCTOK PROCESS WASTES
PLANT 41061
Ul
I
to
Stream Description
Flow (I/far)
Duration (bra)
Simple ID No.
TOXIC ORGAHICS
4 Benzene
7 Cblorobenzene
8 l,2,4-Tricbloroben»ene
11 1,1,1-TrichlorocUune
13 1,1-Dichloroethane
23 Chloroform
24 2-Chloropbenol
25 1 , 2-Dichlorobenzene
26 1,3-Dichlorobenzene
27 1,4-Dichlorobenzene
29 1,1-Dlcbloroethylene
31 1,2-Dichlorophenol
37 1,2-Diphenylhydraziue
38 Ethylbenzene
39 Fluoranthene
44 Hethylene Chloride
51 ChlorodibroBoae thane
55 Naphthalene
57 2-Hitrophenol
58 4-Nitropbenol
65 Phenol
66 Bis(2-ethylhexyl)phthaUte
67 Butyl benzyl phthalate
68 Di-H-Butyl phthalate
69 Di-N-Octyl phthalate
70 Dietbyl Pbthalate
85 Tetracbloroethylene
86 Toluene
87 Trickloroethylene
121 Cyanide*
Total -Toxic Organic*
TOXIC INORCAHICS
115 Arsenic
HI Berylliuai
118 Cadaitn
119 ChroeiiiB
120 Copper
122 Lead
123 Hercury
124 Nickel
125 Seleniua
RaU
6000
24
3251
Concentration Has* Load
•8/1 k8/d«y
<0. 01
0.020 0.0029
<0.01
<0.01
<0.01
<0.01
<0.01
^0.01
<0.01
•fO.Ol
<0.01
0.013 0.0019
0.020 0.0029
< 0.002
<0.003
< 0.00 3
<0.02
0.01 0.0014
0.018 0.0026
<0.001
<0.025
<0.003
Scrubber
4500
24
32SO
Concentration Mass Load
.•871 kg/day
<0.01
<0.01
<0.01
<0.01
0.013 0.0014
<0.01
0.02 0.0022
0.025 0.0027
<0.01 B
<0.01
<0.01 B
<0.0l B
<0,01
<0.01
<0,01
<0.005
0,058 0.0063
0.025 0.003
<0.003
<0.003
<0.02
0.024 0.003
<0.01
<0.001
<0.025
Effluent
439110
24
3252
Concentration
•ft/1
<0.01
0.63
0.019
0.078
<0.01
<0.01
<0.01
0.051
<0.01
<0.01
0.053
<0.01
<0.01
<0.01
<0.01
<0.01
0.760
<0.01
0.022
<0.005
1.613
<0.002
0.011
0.003
0.129
1.06
0.116
0.006
0.575
Raw
6000
24
3255
Mass Load Concentration Haaa Load
kg/day Mft/l kg/day
6.64
0.200
0.822
0.537
0.5S9
8.009
0.232
<0.005
16.999
<0.002
0.116 <0.003
0.032 <0.003
1.36 <0.02
11.17 <0.003
1.22 <0.01
0.063 0.001 0.0001
6.06 <0.025
<0.003
*Hot included in Total Toxic Organics figure
-------
TABLE 5-14 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 41061
Stream Description
Flow (1/hr)
Duration (hts)
Sample ID No.
TOXIC INORGANICS (COHT)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Raw
6000
24
3251
Concentration
"8/1
<0.002
<0.02
0.006
0.034
Mass Load
kg/day
Scrubber
4500
24
3250
Concentration
«g/l
Haas Load
kg/day
439110
24
3252
Concentration
•g/1
Mass Load
kg/day
Raw
6000
24
3255
Concentration
ng/1
<0.002
<0.02
0.0009 0.021
0.0049
0.07
0.008
<0.02
0.002 0.088
0.084 <0.002
<0.02
0.93 0.004
0.008
2.0
21.04
0.005
Mass Load
kg/day
0.006
0.0061
I
(T>
LO
Aluminum
BaruiB
Boron
Calcium
Cobalt
Gold
Iron
Magnesiuffl
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
pH
0.01
3
215
0.0014
.0.432
30.96
0.144
<0.3
34
39
15
0.113
3.67
4.21
1.62
<0.013
11
34
1.24
52
115.9
358.3
13.07
548.0
<0.01
-------
TABLE 5-M CCONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 41061
Ul
I
CTl
Strew Description
Flow
-------
TABLE 5-14 (CONT)
ui
1
Ul
SEMICONDUCTOR PROCESS WASTES
PLANT 41061
Stream Description
Flow (l/nr>
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (CONT)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluminum
Barm
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenola
Total Organic Carbon
Fluoride
OTHER POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
pli
Scrubber
4500
24
3254
Concentration
Mass Load
kg/day
439110
24
32S6
Concentration
mg/ 1
Mass Load
kg/day
6000
24
3259
Concentration
»g/ 1
<0.002
<0.02
0.012
0.07
0.002
<0.02
0.001 0.016
0.021 <0.002
<0.02
0.169 <0.001
Scrubber
4500
24
3258
Mass Load Concentration
kg/day ng/1
<0.002
<0.02
0.01
0.007
1.88
19.81
0.02
0.003
0.054
Mass Load
kg/day
0.001
0.006
0.428
0.046
0.012
0.126
0.026
0.0037
0.436
0.047
-------
TABLE 5-H (CONT)
ui
I
en
Streaai Description
Flow (I/far)
Duration (hr«)
Staple ID No.
TOXIC ORGANICS
4 Benzene
7 Cblorobenzene
8
11
13
,2,4-Trichlorobenxene
,1,1-Trichloroetfaane
,1-Dicfaloroethane
23 bloroform
24 -Cfaloropfaenol
25 ,2-Dichlorobenzene
26 ,3~Dicblorobenzene
27 ,4-Dichlorobenzene
29 ,1-Dichloroethyleoe
31 ,2-Pichloropbenol
37 1,2-Dipheaylhydrazine
3ft Ethylbenzene
39 Fluoranthene
44 Hetbylene Chloride
51 CfalorodibroawBethane
55 Naphthalene
57 2-Nitrophenol
58 4-Nltropbenol
65 Pbeool
66 Bi8(2-ethylhexyl)phthalate
67 Butyl benzyl phthalate
68 Di-H-Butyl pbthalate
69 Di-M-Octyl pbthalate
70 Dletbyl PhthaUte
85 Tetracbloroethylene
86 Toluene
87 Tricbloroetbylene
121 Cyanide**
Total Toxic Organica
TOXIC TOTALS
114 Antinony
115 Arsenic
117 Beryl HIM
118 Cadaiuai
119 Chroauuai
120 Copper
122 Lead
123 Hercury
124 Nickel
125 Seleniuai
GaAa
24
3267
Concentratioo
•ft/1
<0.01
<0.01
0.012
<0.01
<0.01
0.019
0.220
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
<0.01
0.251
<0.002
<0.003
<0.003
<0.02
0.003
<0.01
<0.001
<0.025
SEMICOWDOCTOR PROCESS WASTES
PLANT 41061
Efftawt
439110*
24
41-33-TE1
Load Concentration Masa Load
kg/day -g/1 kg/day
Effluent
439110*
24
41-33-TE2
Concentration Has* Load
•g/1 kg/day
City Water
439110*
24
41-33-CWl
Concentration Maea Load
•t/1 kg/day
3.0
0.015
0.185
0.015
0.005
1.00
0.005
0.225
0.008
0.006
0.80
0.01
5.27
<0.10
0.067
<0.015
0.004
0.265
1.230
0.095
0.051
0.205
<0.6l
31.62
0.158
1.95
0.158
0.053
10.54
0.053
2.37
0.084
0.063
8.43
0,105
55.58
0.706
0.042
2.79
12.96
1.001
0.537
2.16
0.015
0.025
0.605
6.376
0.105
0.605
0.009
1.107
6,376
0.095
0.005
0.47S
1.324
13.95
0.52
<0.02
<0.01
<0.015
0.002
<0.05
0.28
-------
TABLE 5-!4 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 41061
Stream Description
Flow (1/hr)
Duration (hrsj
Sample ID No.
TOXIC INORGANICS (CONT)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluninum
Bar tin
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttriun
Phenols
Total Organic Carbon
Fluoride
GaAs
24
3267
Concentration
"8/1
<0.002
<0.02
0.002
0.005
Mass Load
kg/day
439110*
24
41-33-FE1
Concentration
«g/l
<0.015
<0.002
0.093
2.01
Mass Load
kg/day
0.98
21.18
Effluent
439110*
24
41-33-FE2
Concentration
mg/1
Mass Load
kg/day
City Hater
439110*
24
4I-33-CH1
Concentration Mass Load
•g/1 kg/day
<0.015
<0.002
0.755
1.075
7.96
11.33
14.7
154.9
3.70
38.99
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
PH
39.0
51.0
9.6
411.0
537.5
<0.01
41.0
8.2
432.1
^Estimated Flow Rate
-------
TABLE 5-U tCOKT)
SEMICONDUCTOR PROCESS WASTES
PLAKT 41061
I
cn
CO
Streaa Description
Flow (1/br)
Duration (bra)
Simple ID No.
TOXIC ORGANICS
4 Benzene
7 Chlorobenzene
8 1,2,4-Trichlorobenzene
11 1,1,1-Tricbloroethane
13 1,1-Dirhloroetbane
23 Chlorofon
24 2~Chloropheaol
25 It2-Dichlorobenx«ne
26 1,3-Dicblorobenzene
27 1,4-Dichlorobeozene
29 1,1-Dicbloroethylene
31 1,2-Dichloropbenol
37 l,2-Diphenylhydra>ine
38 Ethylbenzene
39 Fluorantbene
44 Hethylene Chloride
51 Cbl orodib roaoaietbane
55 Naphthalene
57 2-Nitropbenol
58 4-Nitropbenol
65 Phenol
66 Bi»(2-etbylhexyl)pbthalate
67 Butyl benzyl pfatbalate
68 Dl-N-Butyl pbthalate
69 Di-N-Octyl phtbalate
70 Dietbyl Pbthalate
85 Tetrachloroetbylene
86 Toluene
87 Trichloroethyleoe
121 Cyanide*
Total Toxic Organica
TOXIC INORGANICS
114 AntiBMny
115 Araenic
117 Berylliun
118 CadMiua
119 Cbroaiiw
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Seleniua
19110
24
3266
Concentration Man Load
•1/1
0.009
<0.002
0.018
<0.003
0.096
0.558
0.048
0.001
0.03
0.09S
0.190
1.03
5.88
0.506
0.011
0.316
*Not included in Total Toxic Organica figure
-------
TABLE 5-14 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 41061
Ul
I
Stream Description
Flow (1/hr)
Duration (hrs)
Sample ID No,
TOXIC INORGANICS (CONT)
126 Silver
127 Thai HUB
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluninun
Bar urn
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Phenols
Total Organic Carbon
Fluoride
OCNVQWIONAL POLUJTAHIS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
439110
24
3266
Concentration
•g/1
0.002
<0.02
0.012
0.767
Maes Load
kg/day
0.021
0.126
8.08
-------
TABLE 5-15
LH
I
Stream Description
Flow (1/hr)
Duration (hrs)
Simple ID Ho.
TOXIC OBGAN1CS
4 Benzene
7 Chlorobenzeoe
,2,4-Tricblorobenzene
8
11
13
,1,1-Trichloroetbane
,1-Dicnloroethane
23 blorofom
24 -Chlorophenol
25 ,2-Dicblorobenzene
26 ,3-Dichlorobenzene
27 ,4-Dichlorobenzene
29 ,1-Dichloroetbylene
31 ,2-Dichloropbenol
37 ,2-Diphenylbydrazine
38 Ethylbenzene
39 Fluorantheoe
44 Hetbylene Chloride
51 Chlorodibroamaw thane
55 Naphthalene
57 2-Hitropbenol
58 4-Hitropheaol
65 Phenol
66 Bi«(2-ethylhcxyl)phtbalate
67 Butyl benzyl phthalate
68 Di-N-Butyl phthalate
69 Di-N-Octyl phthalate
70 Diethyl Phthalate
85 Tetrachloroetbylene
86 Toluene
87 Tricbloroetbylene
121 Cyanide*
Total Toxic Organic*
TOXIC INORGANICS
114 Ant lawny
115 Arsenic
117 Berylliiw
118 Cad«itui
119 ChroBiiM
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Selenium
Recycle
34505
24
3668 ,
Concentration Haas Load!
•8/1 kg/day 1
SEMICONDUCTOR PROCESS WASTES
PLANT 42044
Effluent
40504
24
3671
Concentration Haas Load
•g/1 kg/day
0.006
0.009
-------
TABLE 5-15 (CONT)
SEMICONDUCTOR PROCKSS WASTES
PLANT 42044
I
-J
Stream Description
Flow (1/hr)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (CONT)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POUUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Magnesium
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Lithium
Phenols
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
pH
Recyc le
34505
24
3668
Concentration
ng/1
<0.001
<0.001
0.157
0.218
0.163
0.066
0.003
0.264
<0.005
<0.05
0.002
0.138
<0.025
<0.001
<0.035
<0.003
<0.01
<1.5
0.008
<0.025
<0.002
<0.001
<0.003
<0.001
<0.001
3.0
4.80
\
Mass Load
kg/day
0.13
0.135
0.055
0.0025
0.219
0.0017
0.114
0.0066
2.48 ,
3.97
/ R
!
\ '
Concent
' "8/
j
0.007
0.001
0.025
0.499
0.492
0.744
; 0.057
0,922
38.6
<0.052
0.02 I
0.382
: 10.3
0.007
<0.037
<0.003
<0.01
1860
0.004
0.036
<0,002
<0.002
<0.004
0,075
0.023
33
46.0
4.0
3.3
17
Effli-ent \
40504 t
24
3671 /
in >' Hass Load
kg/day
0.007
0.001
0.024
0.481
0.72
0.055
0.90
0.019
0.37
0.0068
0.0039
0.035
0.073
0.022
32.1
44.72
16.5
Recycle
33774
24
3672
Concentration
•8/1
<0.001
<0.001
0.006
0.07
0.018
0.10
0.004
0.046
0.013
0.062
0.047
0.036
0.001
<0.035
3.35
<0.025
<0.002
0.002
<0.003
<0.001
12.0
4.1f)
3.0
Has-s Loa
kg/day
0.005
0.057
0.014
0.08
0.003
0.037
0.05
0.038
0.0008
0.0016
9.73
3.32
2.43
/ Effluent
/ 36907
\! 24
V 3673
dl Concentration
' 0.002
; <0.001
0.019
0.283
0.24
0.603
0.048
0.695
33
0.081
0.207
9.54
0.004
0.062
1090
<0.025
0.005
0.005
<0.003
0.004
53.0
46,0
14.0
12.4
1
Hass Load
kg/day
0.0018
0.017
0.221
0.53
0.04
0.62
0.72
0.18
0.0035
0.055
0.004
0.004
0.0035
46.95
40.75
12.4
10.98
-------
en
I
NJ
Strean Description
Flow (1/hr)
Duration (bri)
ID Mo.
TOXIC ORGANICS
4 Benzene
7 Cblorobeazene
8
11
13
,214-Tri chlorobenzene
,1,1-Tricbloroethane
,1-Dicbloroethane
23 Chloroform
24 -Chlorophenol
25 ,2-Dicblorobeazene
26 ,3-Dichlorobenzene
27 ,4-Dichlorobenzene
29 ,1-Dicbloroethylene
31 ,2-Dicbloropbenol
37 ,2-Dipfaenylhydrazine
38 Ethylbenzene
39 Fluorantbene
44 Hethyleae Chloride
51 Cblo rod ibrowNK thane
55 Naphthalene
57 2-Nitropheool
SB 4-Nitropbenol
65 Phenol
66 Bi»(2-ethylhexyl)pbtbalate
67 Butyl benzyl phthalatc.
68 Di-H-Butyl pbthalate
69 Di-M-OcLyl Pbthalate
70 Dietbyl Phthalate
85 Tetrachloroethylene
86 Toluene
87 Trichloroetbyleue
121 Cyanide*
Total Toxic Organic*
TOXIC INORGANICS
Recycle
30001
24
3674
Concentration Mais Load
•g/1 kg/day
TABLE 5-15 (CONT)
SEMICOHDUCTOR PROCESS WASTES
PLANT 42044
LCD Raw Uaate
7319
24
3669
Concentration Haaa Load
•g/1 kg/day
0.004
0.002
<0.01
0.067
0.001
0.012
0.006
0.002
<0.001
0.094
0.003
0.001
0.048
0.0004
<0.01
<0.01
<0.01
<0.01
<0.01
0.040
0.0086
0.004
0.0014
0.066
0.010
<0.01
<0.01
<0.01
0.017
0.050
0.007
0.0018
0.003
0.0088
34533
24
3675
Concentration Haas Load
•*/1 kg/day
0.130
0.010
0.012
0.033
0.005
<0.01
0.070
0.011
0.180
0.020
0.004
0.001
0.004
0.476
0.108
0.008
0.010
0.027
0.004
0.058
0.009
0.149
0.0166
0.003
0.0008
0.0033
0.393
114 Antinony
115 Araenic
117 Beryllium
118 Cadaitw
119 Cbroaiiw
120 Copper
122 Lead
123 Mercury
124 Nickel
125 Seleniua
0.001
<0.01 I
<0.001
<0.002
<0.001
<0.002
<0.04
<0.001
<0.005
<0.001
0.007
<0.001
0.004
<0.001
<0.002
0.029
0.003
<0.04
<0.001
<0.005
<0.001
0.0007
0.005
0.0005
<0.001
0.12
<0.001
0.003
0.205
0.012
\ 0.049
^0.001
0.009
A.046
0.10
0.0025
0.170
0.01
0.041
0.0075
0.038
*Not Included in Total Toxic Organic* figure
-------
TABLE 5-15 (CONT)
SEMICONDUCTOR PROCESS WASTES
PLANT 42044
tn
I
-j
OJ
Strean Description
Flow (1/hr)
Duration (hrs)
Sample ID No.
TOXIC INORGANICS (CONT)
126 Silver
127 Thallium
128 Zinc
Total Toxic Inorganics
NON-CONVENTIONAL POLLUTANTS
Aluminum
Barium
Boron
Calcium
Cobalt
Gold
Iron
Hagnesim
Manganese
Molybdenum
Palladium
Platinum
Sodium
Tellurium
Tin
Titanium
Vanadium
Yttrium
Lithium
Phenola
Total Organic Carbon
Fluoride
CONVENTIONAL POLLUTANTS
Oil & Grease
Total Suspended Solids
Biochemical Oxygen Demand
pH
Recycle
30001
24
3674
Concentration Mass Load
•g/1 kg/day
<0.001
<0.001
<0.001
0.001
0.053
0.002
0.172
<0.005
<0.05
0.023
<0.025
<0.001
<0.035
1.5
<0.025
<0.002
<0.001
<0.003
0.005
2.0
5.8
1.2
1.0
1.4
0.0007
0.86
0.72
1.01
LCD Raw Haste
7319
24
3669
Concentration Hass Load
»g/l kg/day
0.001
<0.001
0.008
0.044
0.038
0.0014
0.12
0.017
0.038
0.006
0.499
0.124
<0,05
0.026
<0.02S
0.002
<0.035
3.24
0.0036
1.44
4.18
<0.025
<0.002
<0.001
<0.003
0.006
109.0
0.17
4.0
5.0
15.0
0.0002
0.0014
0.0078
34533
24
3675
Concentration Hass Load
«8/1 kg/day
0.70
0.88
2.6
<0.001
<0.001
0.01
0.445
0.0067
0.001
0.088
0.0049
0.0004
i 0.895
' 0.048
0.753
35
0.058
0.352
9.98
0.005
0.042
1030
0.001
19.1
0.03
0.027
1 0.005
0.006
<0.003
; 0.002
; 46.0
64.5
1.0
11.0
10.2
0.008
0.287
0.74
0.0398
0.62
0.048
0.29
0.004
0.035
0.022
0.004
0.005
0.0017
38.12
53.46
0.83
9.117
8.45
-------
TABLE 5-16
SEMICONDUCTOR SUBCATEGORY
TTO* ANALYSIS-INDIVIDUAL PROCESS STREAMS
AND ASSOCIATED EFFLUENT STREAMS
Plant process Stream
04294 Photoresist Developing
Etching
Photoresist Stripping
Rinse
Concentration
TTO (mg/1)
0.085
<0.01
0.021
Effluent
Concentration
TTO (mg/1)
245.'272
41061 Oxide Etching 0.034
Photoresist Stripping <0.01
Metal Etching 0.066
Cleaning <0.01
1.613
02040
Polishing & Wax Removal
0.105
2.152
* Total Toxic Organics.
5-74
-------
TABLE 5-18
ELECTRONIC CR7STALS
SUMMARY OF RAW WASTE DATA
Toxic Organics
Parameter
Plant Practicing
Solvent Management
mg/1
Plant Not Practicing
Solvent Management
mg/1
8 1,2,4-trichlorobenzene ND
11 1,1,1-trichloroethane 0.170
25 1,2-dichlorobenzene ND
26 1,3-dichlorobenzene ND
27 1,4-dichlorobenzene ND
37 1,2-diphenylhydrazine 0.014
55 naphthalene 0.038
68 di-n-butyl phthalate ND
78 anthracene 0.015
85 tetrachloroethylene ND
87 trichloroethylene ND
TOTAL TOXIC ORGANICS
ND - not detected
Toxic Metals
Antimony
Arsenic*
Beryllium
Cadmium
Chromiumt
Coppert
Lead
Mercury
Nickelt
Selenium
Silver
Thallium
Zinct
Conventional Pollutants
Oil and Grease
Total Suspended Solids
Biochemical Oxygen Demand
Non-Conventional Pollutants
0.237
Min. Cone,
mg/1
<0.001
1.75
<0.001
<0.005
0.008
0.024
0.004
<0.001
<0.025
<0.002
<0.005
<0.001
0.040
8.0
7.0
4
3.66
ND
132.6
1.96
52.6
ND
ND
0.046
ND
1.4
0.02
192.286
Fluoride 28
Max. Cone.
mg/1
0.91
3.03
0.001
0.040
6.95
7.92
0.308
0.001
2.74
0.129
0.025
0.050
4.23
94
2900
27
378
Mean Cone.
mg/1
0.122
2.39
<0.001
0.009
0.948
1.23
0.085
<0.001
0.454
0.016
0.005
0.008
0.654
31.5
616
19
129.7
v:
* Data for arsenic are from plants producing gallium arsenide crystals.
t These metals are associated with metal finishing operations.
5-75
-------
TABLE 5-19
RESULTS OF WASTEWATER ANALYSIS
PLANT 301
TYPE OF PRODUCTION: GROWING QUARTZ RODS; PREPARATION OF BLANK
QUARTZ CRYSTAL WAFERS
Concentrations mg/1
Pollutant
Flow, I/day
Final Discharge
Point 1 ,-
iX'
18,900
Cutting and Lapping
Point 2*
200
Classicals
pH
Suspended Solids
Oil and Grease
TOC
BOD
Fluoride
(>0.1 mg/1)
Priority Metals
antimony
copper
nickel
zinc
Priority Organics (>0.01 mg/1)
2,4 dinitrophenol
4,6 dinitro-o-cresol
pentachlorophenol
n-nitrosodiphenylamine
bis(2-ethylhexyl) phthalate
anthracene
fluorene
benzene
1,1,1-trichloroethane
chloroform
methylene chlor ide
1,2-diphenylhydrazine
naphthalene
9.6
36
94
2.6
27
44
0.64
0.015
0.170
0.014
0.038
7.8
320
20%
7600
25
3.3
0.20
0.63
0.14
0.187
0.070
0.016
0.051
0.011
0.048
0.013
0.029
0.035
0.190
0.360
- Indicates less than 0.1 mg/1 for priority metals and less than 0.01
mg/1 for priority organics.
* This sample includes oily waste that is hauled.
5-76
-------
TABLE 5-20
RESULTS OF WASTEWATER ANALYSIS
PLANT 304
TYPE OP PRODUCTION: FABRICATION OF QUARTZ WAFERS FROM PURCHASED
RODS; ASSEMBLY OF ELECTRONIC DEVICES
CONCENTRATIONS mg/1
Pollutant
Flow I/day
Influent
Settling Tanks
Point 1
28,400
Influent
Settling Tanks
Point 2
28,400
Discharge
Point 3
56,800
Classicals
PH
Suspended Solids
Oil and Grease
TOC
BOD
Fluoride
Priority Metals
(>0.1 mg/1)
chromium
copper
lead
nickel
zinc
Priority Organics
(>0.01 mg/1)
1,1,1-trichloroethane
1,1,2-trichloroethane
1.1-dichloroethylene
tetrachloroethylene
toluene
anthracene
methylene chloride
6.3
2000
41
460
5
30
1.15
0.60
6.06
1.73
1.40
0.016
0.015
6.3
3400
NA
3
1.2
NA
NA
5.9
2900
350
6
120
0.52
7.9
0.3
2.7
4.2
0.140
0.075
2.2
0.015
0.025
0.014
0.060
NA Not analyzed.
Indicates less than 0.1 mg/1 for priority metals and less than 0.01
mg/1 for priority organics.
5-77
-------
TABLE 5-21
RESULTS OF WASTEWATER ANALYSIS
PLANT 380
TYPE OF PRODUCTION: FABRICATION OF QUARTZ CRYSTALS FROM RODS
Pollutant
Flow, I/day
Concentration mg/1
Wafer Fabrication Wash and Rinse
Point 2 Point 1
10,500
4000
Classicals
pH
Suspended Solids
Oil and Grease
TOC
BOD
Priority Metals (>0.1 ug/1)
copper
Priority Organics (>0.01 mg/1)
1,2,4-trichlorobenzene
1,2-dichlorobenzene
1,3-dichlorobenzene
1,4-dichlorobenzene
methylene chloride
di-n-butyl phthalate
tetrachloroethylene
trichloroethylene
1,2-dichloroethane
1,1,1-trichloroethane
bis(2-ethylhexyl)phthalate
3.0
1.2
8.4
5.4
NA
0.18
3.66
132.6
1.96
52.6
0.046
1.4
0.02
7.6
577
9.6
47
26
1.44
0.014
0.049
0.026
0.040
0.40
0.32
0.077
Indicates less than 0.1. mg/1 for priority metals and less than 0.01
mg/1 for priority organics.
5-78
-------
Ul
I
-J
VD
TABLE 5-22
RESULTS OF ANALYSIS PLANT 401
CONCENTRATIONS mg/1
TYPE OF PRODUCTION: GROWING GALLIUM GADOLINIUM GARNET CRYSTALS;
FABRICATING GGG AND SAPPHIRE CRYSTALS
pollutant
Flow, I/day:
Classicals
PH
Suspended Solids
Oil and Grease
TOC
Fluoride
Priority Metals
(>0.1 mg/1)
copper
lead
nickel
zinc
Priority Organics
(>0.01 mg/1)
2 f 4-dichlorophenol
isopborone
bis(2-ethylhexyl)phthalate
di-n-butyl phthalate
anthracene
1,1,1-trichloroe thane
chloroform
toluene
methylene chloride
Other Metals
gallium
gadolinium
niobium
lithium
Slicing Waste
Point 6
19
9.5
1200
990
NA
0.7
11.3
0.40
0.28
0.78
0.230
0.130
0.30
0.140
0.018
0.089
0.013
0.178
0.020
12
.10
5
0.09
Buffing Waste
Point 7
42
8.5
2100
14
NA
0.8
-
0.17
-
-
-
-
-
0.023
-
-
-
0.035
0.039
2
6
45
4.8
Neutralized Acid
Point 3
91
4.0
110
NA
56
33
0.20
0.13
0.27
_
NA
1.8
3.4
2.8
0.04
Scrubber Waste
Point 1
11
5.5
0.4
NA
9.3
0.6
-
-
0.12
-
NA
^
0.55
1.6
1.4
0.02
Indicates less than 0.1 mg/1 for priority metals and less than 0.01 mg/1 for priority organics.
NA Not analyzed.
-------
TABLE 5-23
RESULTS OF WASTEWATER ANALYSIS
PLANT 402
TYPE OF PRODUCTION: SYNTHESIS OF LIQUID CRYSTAL CHEMICALS,
MANUFACTURE OF LIQUID CRYSTAL DEVICES
Concentrations rag/1
Pollutant
Flow, I/day:
Glassware Cleaning
Stream 1
22,700
Plant Effluent
Stream 2
151,400
Classicals
PH
Oil and Grease
TOC
Fluoride
Priority Metals (>0.1 mg/1)
lead
nickel
zinc
6.5
5.1
58
1.2
0.10
0.30
0.18
6.
9.
820
1.
5
8
2
-
-
Priority Organics (>0.01 mg/1)
none
Indicates less than 0.1 mg/1 for priority metals and less
than 0.01 mg/1 for priority organics.
5-80
-------
TABLE 5-24
RESULTS OF ANALYSIS
PLANT 403
CONCENTRATIONS mg/1
TYPE OF PRODUCTION:
MANUFACTURE OF INDIUM ARSENIDE, INDIUM ANTIMONIDE,
AND BISMUTH TELLURIDE CRYSTALS
(Jl
I
CO
Composite
Pollutant (Streams 2,
3., 4, & 5)
Flow, I/day:
Classicals
pH
Suspended Solids
Oil and Grease
TOG
Fluoride
Priority Metals (>0.1 mg/1)
antimony
arsenic
copper
nickel
selenium
Priority Organics (>0.01 mg/1)
chloroform
methylene chloride
Other Metals
bismuth
indium
tellurium
NA
NA
NA
440
NA
-
0.14
0.11
0.13
0.040
0.050
NA
Milling
Stream 2
114
7.5
14
12
NA
0.4
1.18
0.27
NA
NA
NA
NA
0.36
0.57
3.20
Slicing
Stream 3
4
8.8
40
160
NA
0.9
187.5*
-
NA
NA
NA
NA
0.23
0.72
17.7
Polishing #1
Stream 4
114
6.7
49
27
NA
0.3
_
0.22
NA
NA
NA
NA
-
9.0
0.12
Polishing #2
Stream 5
114
7.4
18
50
NA
0.6
3.30
0.11
NA
NA
NA
NA
-
0.34
0.12
Rinse
Stream 6
1140
3.0
4.0
12
NA
36
-
0.32
NA
NA
NA
NA
-
0.57
0.17
Indicates less than 0.1 mg/1 for priority metals and less than 0.01 mg/1 for priority organics.
NA Not analyzed.
* The high levels of antimony occur in the slicing machine coolant, which is recirculated, and then
hauled for disposal.
-------
-------
SECTION 6
SUBCATEGORIES AND POLLUTANTS TO BE REGULATED,
EXCLUDED OR DEFERRED
This section cites the E&EC subcategories which are being (1)
regulated, (2) excluded from regulation, and (3) deferred for
future study. In addition, this section explains, for those
subcategories being regulated, which pollutants are being
regulated and which pollutants are being excluded from
regulation.
6.1 SUBCATEGORIES TO BE REGULATED
Based on wastewater characteristics presented in Section 5,
discharge effluent regulations are being proposed for the Semi-
conductor and the Electronic Crystals subcategories.
6.1.1 Pollutants To Be Regulated
The specific pollutants selected for regulation in these
subcategories are pH, total suspended solids, fluoride, total
toxic organics, and arsenic. Arsenic is to be regulated only in
the Electronic Crystals subcategory and only at facilities that
produce gallium arsenide or indium arsenide crystals. Total
suspended solids are also only to be regulated in the Electronic
Crystals subcategory. The rationale for regulating these
pollutants is presented below.
(pH) Acidity or Alkalinity
During semiconductor manufacture, alkaline wastes result from
alkaline cleaning solutions; and during electronic crystal
manufacture, alkaline wastes result from the use of hydroxides
and carbonates from crystal growth and cleaning and rinsing
operations. Acid wastes occur in both subcategories from the
use of acids for cleaning and etching operations. The pH in the
raw waste can range from 1.1 to 11.9 from these operations.
Although not a specific pollutant, pH is a measure of acidity or
alkalinity of a wastewater stream. The term pH is used to
describe the hydronium ion balance in water. Technically, pH is
the negative logarithm of the hydrogen ion concentration. A pH
of 7 indicates neutrality, a balance between free hydrogen and
free hydroxyl ions. A pH above 7 indicates that the solution is
alkaline, while a pH below 7 indicates that the solution is
acidic.
6-1
-------
Waters with a pH below 6.0 are corrosive to water works
structures, distribution lines, and household plumbing fixtures
and such corrosion can add constituents to drinking water such
as iron, copper, zinc, cadmium, and lead. Low pH waters not
only tend to dissolve metals from structures and fixtures, but
also tend to redissolve or leach metals from sludges and bottom
sediments. Waters with a pH above 9.9 can corrode certain
metals, are detrimental to most natural organic materials, and
are toxic to living organisms.
Total Suspended Solids
Suspended solids are found in wastewaters from electronic
crystals manufacturers at an average concentration of 616
milligrams per liter. Suspended solids result from slicing,
lapping, and grinding operations performed on the crystal. Some
abrasives used for these operations may also enter the
wastewaters.
Suspended solids increase the turbidity of water, reduce light
penetration, and impair the photosynthetic activity of aquatic
plants. Solids, when transformed to sludge deposit, may blanket
the stream or lake bed and destroy the living spaces for those
benthic organisms that would otherwise occupy the habitat.
Fluoride
Hydrofluoric acid is commonly used as an etchant in providing
proper surface texture for application of other materials and
creating depressions for dopants in device manufacture. Fluo-
ride concentrations have been observed as high as 147 milligrams
per liter in raw wastes from semiconductor manufacture, and as
high as 378 milligrams per liter in raw wastes from electronic
crystals manufacture.
Although fluoride is not listed as a priority pollutant, it can
be toxic to livestock and plants, and can cause tooth mottling
in humans. The National Academy of Sciences recommends: (1)
two milligrams per liter as an upper limit for watering
livestock and, (2) one milligram per liter for continuous use as
irrigation water on acid soils to prevent plant toxicity and
reduced crop yield. Although some fluoride in drinking water
helps to prevent tooth decay, EPA's National Interim Primary
Drinking Water Regulations set limits of 1.4 to 2.4 milligrams
per liter in drinking water to protect against tooth mottling.
6-2
-------
Arsenic
Arsenic is being regulated only in the Electronic Crystals
subcategory and only at facilities that produce gallium arsenide
or indium arsenide crystals. The manufacture of gallium
arsenide and indium arsenide crystals generates arsenic wastes
from slicing, grinding, lapping, etching, and cleaning
operations. Concentrations in raw wastes from crystals
manufacture have been observed as high as 80 milligrams per
liter.
Certain compounds of arsenic are toxic to man both as poisons
and as carcinogenic agents. The carcinogenic effects have only
recently been discovered and little is known about the mech-
anism. Arsenic can be ingested, inhaled, or absorbed through
the skin. The EPA 1980 water quality criterion for protection of
aquatic life is 0.44 milligrams per liter.
Total Toxic Organics
Toxic organic pollutants were frequently found in wastewaters
from semiconductor and electronic crystal facilities. The
sources of these organics are solvent cleaning operations. The
high concentrations observed (as high as 245 milligrams per
liter) indicate probable dumping of solvent cleaning baths.
Because of the wide variety of solvents used in the manufacture
of semiconductors and electronic crystals, and the subsequent
large number of toxic organics found in process wastewaters, the
Agency is proposing that total toxic organics (TTO) be used as
the pollutant parameter for discharge limitations. TTO is the
sum of the concentrations of toxic organics listed in Table 6-1
(which is found on page 6-4) and found at concentrations greater
than 0.01 milligrams per liter. This recommendation is based on
the fact that solvent discharges can be reduced to a minimum
with good housekeeping practices and solvent management
techniques.
6-3
-------
TABLE 6-1
POLLUTANTS COMPRISING TOTAL TOXIC ORGANICS
Toxic Pol-
lutant No.
8 1,2,4-trichlorobenzene
11 1,1,1-trichloroethane
21 2,4,6-trichlorophenol
23 chloroform
24 2-chlorophenol
25 1,2-dichlorobenzene
26 1,3-dichlorobenzene
27 1,4-dichlorobenzene
29 1,1-dichloroethyiene
31 2,4-dichlorophenol
37 1,2-diphenylhydrazine
38 ethylbenzene
44 methylene chloride
Toxic Poi-
lutant No.
54 isophorone
55 naphthalene
57 2-nitrophenol
58 4-nitrophenol
64 pentachlorophenol
65 phenol
66 bis(2-ethylhexyl)phthalate
67 butyl benzyl phthalate
68 di-n-butyl phthalate
78 anthracene
85 tetrachloroethylene
86 toluene
87 trichloroethylene
6.2 TOXIC POLLUTANTS AND SUBCATEGORIES NOT REGULATED
The Settlement Agreement, explained in Section 2, contained
provisions authorizing the exclusion from regulation, in certain
circumstances, of toxic pollutants and industry categories and
subcategories. These provisions have been rewritten in a
Revised Settlement Agreement which was approved by the District
Court for the District of Columbia on March 9, 1979, NRDC v.
Costle, 12 ERG 1833.
6.2.1 Exclusion of Pollutants
One hundred and two toxic pollutants are being excluded from
regulation for both the Semiconductor and Electronic Crystals
subcategories. The basis for exclusion for eighty-nine of these
pollutants is Paragraph 8(a)(iii) which allows exclusion for
pollutants which are not detectable with state-of-the-art
analytical methods. The basis of exclusion for another nine of
these pollutants is also provided by Paragraph 8(a)(iii) which
allows exlusion of pollutants which are present in amounts too
small to be effectively reduced. Four toxic pollutants are
being excluded from regulation because these polluants are
already subject to effluent limitations and standards being
promulgated under the Metal Finishing Category. This is
permitted by Paragraph 8(a)(i).
In addition to the exclusion of the one hundred and two
pollutants for both subcategories, another toxic pollutant is
6-4
-------
being excluded for the Semiconductor subcategory only. This
pollutant is arsenic and is being excluded under Paragraph
8(a)(iii) because it was found in amounts too small to be
effectively treated.
The nine toxic pollutants that are being excluded under
Paragraph 8(a)(iii) are: antimony, beryllium, cadmium, mercury,
selenium, silver, thallium, zinc, and cyanide.
The four toxic pollutants which are being excluded under
Paragraph 8(a)(i) are as follows: nickel, copper, chromium, and
lead.
The eighty nine pollutants which are being excluded under 8
(a)(iii) because they were not detected are presented in Table
6-2 on page 6-7.
6.2,2 Exclusion of Subcategories
All subcategory exclusions are based on either paragraph
8(a)(i), or Paragraph 8(a)(iv) of the Revised Settlement Agree-
ment. Paragraph 8(a)(i) permits exclusion of a subcategory for
which "equally or more stringent protection is already provided
by an effluent, new source performance, or pretreatment
standard or by an effluent limitation ..." Paragraph 8(a)(iv)
permits exclusion of a category or sutacategory where "the amount
and the toxicity of each pollutant in the discharge does not
justify developing national regulations ..." These exclusions
are supported by data and information presented in Section 5.
Subcategories being excluded under Paragraph 8(a)(iv) are as
follows: Resistors, Dry Transformers, Fuel Cells, Magnetic
Coatings, Mica Paper, Carbon and Graphite Products, Fluorescent
Lamps, and Incandescent Lamps.
Subcategories being excluded under Paragraph 8(a)(i) are as
follows: Switchgear, Resistance Heaters, Ferrite Electronic
Parts, Insulated Wire and Cable, Fixed Capacitors, Fluid Filled
Capacitors, Transformers (Fluid Filled), Insulated Devices -
Plastics and Plastic Laminated, and the subcategory of Motors,
Generators, and Alternators.
6.3 CONVENTIONAL POLLUTANTS NOT REGULATED
BOD, fecal coliform, and oil and grease are not being regulated
for either subcategory because they were found at concentrations
below treatability. BOD was found at an average of 19 milli-
grams per liter in electronic crystals plants and 21 milligrams
6-5
-------
per liter in semiconductor planter oil and grease was found at
an average concentration of 31.5 milligrams per liter in elec-
tronic crystals plants and 4 milligrams per liter in semicon-
ductor plants; and fecal coliform was not present in the process
discharge from either subcategory.
Total suspended solids (TSS) is not being regulated in the case
of semiconductors because it was found at an average
concentration of 6.9 milligrams per liter which is below
treatability.
6.4 SUBCATEGORIES DEFERRED
Two subcategories of the E&EC category are being deferred.
These subcategories are Electron Tubes, and Phosphorescent
Coatings.
The information currently available to the Agency for these
subcategories is insufficient not only to make a determination
of the need for regulation, but also to accurately describe the
wastewater characteristics. Preliminary data indicate that the
major pollutants found in the discharges from Electron Tubes are
lead, cadmium, and chromium. For Phosphorescent Coatings, pre-
liminary data indicate that the major pollutants are fluoride,
cadmium, and zinc.
6-6
-------
TABLE 6-2
Toxic Pollutants Not Detected
TOXIC POLLUTANT
1. Acenaphthene
2. Acrolein
3. Acrylonitrile
4. Benzene
5. Benzidine
6. Carbon Tetrachloride (Tetrachloromethane)
7. Chlorobenzene
9. Hexachlorobenzene
10. 1,2-Dichlorethane
12. Hexachloroethane
13. 1,1-Dichloroethane
14. 1,1,2-Trichloroethane
15. 1,1,2,2-Tetrachloroethane
16. Chloroethane
17. Bis(chloromethyl)ether
18. Bis(2-chloroethyl)ether
19. 2-Chloroethyl Vinyl Ether (Mixed)
20. 2-Chloronaphthalene
22. p-Chloro-m-cresol
28. 3,3'-Dichlorobenzidine
30. 1,2-Trans-Dichloroethylene
32. 1,2-Dichloropropane
33. l,3-D1chloropropylene(l,3-Dichloropropene)
34. 2,4-Dimetnyl Phenol
35. 2,4-Dinitrotoluene
36. 2,6-Dinitrotoluene
39. Fluoranthene
40. 4-Chlorophenyl Phenyl Ether
41. 4-Bromophenyl Phenyl Ether
42. Bis{2-chloroisopropyl)ether
43. Bis(2-ch1oroethoxy)methane
45. Methyl Chlorlde(Chloromethane)
46.
47.
48.
49.
50.
51.
52.
53.
56.
59.
60.
61.
62
63.
69.
70.
71.
72.
73.
74.
75.
76.
77.
79.
80.
81.
82.
83.
84.
88.
89.
90.
Methyl Bromide (Bromomethane)
Bromofora {Tribromomethane)
Dichlorobromomethane
Trichlorofluoromethane
Dichlorodifluoromethane
Chlorodibromomethane
Hexachlorobutadiene
Hexachlorocyclopentadlene
Nitrobenzene
2,4-Dinitrophenol
4,6-Dinitro-o-cresol
N-Nltrosodimethylamine
N-Nitrosodiphenylamine
N-Nitrosodi-n-propylamine
Di-n-octyl Phthalate
Diethyl Phthalate
Dimethyl Phthalate
1,2-Benzanthracene [Benzo(a)anthracene]
Benzo{a)Pyrene (3,4-Benzopyrene)
3,4-Benzofluoranthene [Benzo(b)fluoranthene]
11,12-Benzof1uoranthene [Benzofk)f1uoranthene]
Chrysene
Acenaphthylene
1,12-Benzoperylene [Benzo(ghi)perylene]
Fluorene
Phenanthrene
1,2,5,6-Oibenzathracene [Dibenzo(a,h)anthracene]
Indeno(l,2,3-cd)pyrene (2,3-0-Phenylenepyrene)
Pyrene
Vinyl Chloride (Chloroethylene)
Aldrin
Oieldrin
6-7
-------
TABLE 6-2 (continued)
91, Chlordane
(Technical Mixture and Metabolites)
92, 4,4'-DDT
93, 4,4'-DDE(P,P'-DDX)
94. 414'-DDD(P,P'-TOE)
95, Alpha-Endosulfan
96. Beta-Endosulfan
97, Endosulfan Sulfate
98. Endrin
99. Endrin Aldehyde
100. Heptachlor
101. Heptachlor Epoxide(BHC-Hexachloro-
cyclohexane)
102. Alpha-BHC
103. Beta-BHC
104. Gamma-BHC(Li ndane)
105. Delta-BHC
106. PCB-1242 (Aroclor 1242)
107. PCB-1254 (Aroclor 1254)
108, PCB-1221 (Aroclor 1221)
109. PCB-1232 (Aroclor 1232)
110. PCB-1248 (Aroclor 1248)
111. PCB-1260 (Aroclor 1260)
112. PCB-1016 (Aroclor 1016)
113. Toxaphene
116, Asbestos
129. 2,3,7,8-Tetrachlorodibenzo-p-dioxin(TCOO)
6-8
-------
SECTION 7
CONTROL AND TREATMENT TECHNOLOGY
The wastewater pollutants of concern in the manufacture of
semiconductors and electronic crystals, as identified in Section
6, are pH, suspended solids, fluoride, arsenic, and total toxic
organics. A discussion of the treatment technologies currently
practiced and most applicable for the reduction of these
pollutants is presented below, followed by an identification of
six treatment system options.
7.1 CURRENT TREATMENT AND CONTROL PRACTICES
Wastewater treatment techniques currently used in the
semiconductor and electronic crystal industries include both in-
process and end-of-pipe waste treatment. In-process waste treat-
ment is designed to remove pollutants from contaminated manufac-
turing process wastewater at some point in the manufacturing
process. End-of-pipe treatment is wastewater treatment at the
point of discharge.
7.1.1 Semiconductor Subcategory
In-process Control — In-process control techniques with
widespread use in this subcategory are collection of spent
solvents for resale or reuse, and treatment or contract hauling
of the concentrated fluoride wastestream. Contract hauling, in
this instance, refers to the industry practice of contracting a
firm to collect and transport wastes for off-site disposal.
An estimated 75 percent of semiconductor facilities collect spent
solvents for either contractor disposal or reclaim. Fifteen of
45 plants surveyed either treat or have contract-hauled the
concentrated fluoride stream.
Rinse water recycle (as much as 85%) is practiced at three of the
plants that were sampled. The pollutants present in the reused
process wastewater are removed in the deionized water production
area. Although reuse conserves water and decreases wastewater
discharge, certain facilities have found recycle to result in
frequent process upsets and subsequent product contamination.
Because of these problems, the use of this technology on a
nationwide basis is limited.
End-of-pipe treatment -- End-of-pipe controls consist primarily
of neutralization which is practiced by all dischargers. One
plant also uses end-of-pipe precipitation/clarification for control of
fluoride.
7-1
-------
7.1.2 Electronic Crystals Subcategory
In-Process Control — In-plant control techniques similar to
those in the Semiconductor subcategory are being practiced to
some degree at most electronic crystals plants. These techniques
primarily involve the segregation for contract hauling (or
reclaiming) of specific wastes such as solvents and cutting oils.
An estimated 70 to 80 percent of the facilities practice solvent
management, and these practices were observed at most of the
plants visited. \J$\tt at two small facilities, plant personnel
indicated that unauthorized discharge oj: solvent wastes
occurs. Sampling results'^'verjjEled this. 7
Of eight plants visited, two treat their concentrated fluoride
stream? one has the fluoride waste contract hauled.
End-of-Pipe Treatment — Treatment technologies currently being
used at electronic crystals plants include neutralization and
precipitation/clarification.. All six direct dischargers treat
to control pH, suspended solids and fluoride. One direct
discharger also treats end-of-pipe to reduce arsenic.
1.2 APPLICABLE TREATMENT TECHNOLOGIES
7.2.1 pH Control
Acids and bases are commonly used in the manufacture of
semiconductors and electronic crystals and result in process
waste streams exhibiting high or low pH values. Sodium hydroxide
and sodium carbonate are used in some crystal growth processes
and for caustic cleaning. Sulfuric, nitric and hydrofluoric
acids are used for etching and acid cleaning operations.
Several methods can be used to treat acidic or basic wastes.
Treatment, is based upon chemical neutralization usually to pH 6-
9. Methods include: mixing acidic and basic wastes, neutrali-
zing high pH streams with acid or low pH streams with bases. The
method of neutralization used is selected on a basis of overall
cost. Process water can be treated continuously or on a batch
basis. When neutralization is used in conjunction with
precipitation of metals it may be necessary to use a batch method
regardless of flow-rate.
7-2
-------
Hydrochloric or sulfuric acid may be used to neutralize alkaline
wastewaters; sulfuric acid is most often chosen because of its
lower cost.
Sodium hydroxide (caustic soda), sodium carbonate (soda ash), or
calcium hydroxide (lime) may be used to neutralize acidic
wastewater. The factors considered in selection include price,
neutralization rate, storage and equipment costs, and
neutralization end products. Sodium hydroxide is more expensive
than many other alkalis but is often selected due to its ease of
storage, rapid reaction rate and the general solubility of its
end product.
7.2.2 Fluoride Treatment
Fluoride appears in semiconductor and electronic crystals
wastewater because of the use of hydrofluoric acid and ammonium
bifluoride as etching and cleaning agents. Basically two options
are available to reduce fluoride in wastewaters from these
facilities: Chemical precipitation of fluoride followed by
solids removal, or isolation for contract hauling of strong
fluoride wastes.
The most usual treatment procedure practiced today in the United
States for reducing the fluoride concentration in wastewater is
precipitation by the addition of lime followed by clarification.
Calcium fluoride is formed:
i
Ca(OH)2 + 2F" = CaF2 + 20H-
The solubility of calcium fluoride in water is 7.8 mg fluoride
ion per liter at 18°C. The precipitate forms slowly, requiring
about 24 hours for completion and the solubility of calcium
fluoride soon after its formation is about ten milligrams of
fluoride per liter.
Data from the Semiconductor subcategory indicate that plants
using precipitation and clarification treatment technologies are
achieving an average effluent concentration of 14 milligrams per
liter fluoride.
Hydroxide precipitation has proven to be an effective technique
for removing many pollutants from industrial wastewater. Metal
ions are precipitated as hydroxides and fluoride is precipitated
as insoluble calcium fluoride. The system operates at ambient
conditions and is well suited to automatic control. Lime is
usually added as a slurry when used in hydroxide precipitation.
The slurry must be kept well mixed and the addition lines
periodically checked to prevent blocking, which may result from a
buildup of solids. The use of hydroxide precipitation does
produce sludge requiring disposal following precipitation.
7-3
-------
The performance of a precipitation system depends on several
variables. The most important factors affecting precipitation
effectiveness are:
1. Addition of sufficient excess chemicals to drive the
precipitation reaction to completion. If treatment
chemicals are not present in slight excess con-
centrations, some pollutants will remain dissolved in
the waste stream.
2. Maintenance of an alkaline pH throughout the
precipitation reaction and subsequent settling.
3. Effective removal of precipitated solids.
Removal of suspended solids or precipitates by gravitational
forces may be conducted in a settling tank, clarifier, or lagoon,
but the performance of the unit is a function of the retention
time, particle size and density, and the surface area of the
sedimentation chamber. Accumulated.sludge can then be removed
either periodically or continuously as in the case of a
clarifier.
The effectiveness of a solids settling unit can often be enhanced
by the addition of chemical coagulants or flocculants which
reduce the repulsive forces between ions or particles and allow
them to form larger floes which are then removed more easily.
Commonly used coagulants include ferric sulfate and chloride;
commonly used flocculants are organic polyelectrolytes.
An applicable technology for further reduction of fluoride is
filtration of the waste stream following precipitation and clari-
fication. Filtration is commonly used in water and wastewater
treatment for the removal of finely suspended particles not
removed by gravity separation.
A filtration unit commonly consists of a container holding a
filter medium or combination of media such as sand or anthracite
coal, through which is passed the liquid stream. The unit can
operate by gravity flqw or under pressure. Periodic backwashing
or scraping of the media is necessary to remove particles
filtered from the liquid stream and prevent clogging of the
filter. The proper design of a filtration unit considers such
criteria as filter flow rate (gpm/sq. ft.), media grain size, and
density.
For the Electrical and Electronic Components category, the
usefulness of filtration technology is questionable. An
evaluation of the effectiveness of precipitation and clari-
fication technologies in this industry has shown an average
7-4
-------
effluent concentration 06 approximately 14 milligrams per liter
fluoride. Addition of a filtration unit would not further reduce
the fluoride concentration significantly (only approximately
three percent)since this level of fluoride is approximately what
would be expected as dissolved calcium fluoride soon after the
formation. Insoluble filterable calcium fluoride would probably
constitute only a small fraction of the 14 milligrams per liter
fluoride.
7.2.3 Arsenic Treatment
Arsenic is found in the wastewaters of plants fabricating
crystals of gallium arsenide and indium arsenide. These wastes
are produced when the crystals are sliced, lapped, and polished,
in the form of powdered gallium arsenide or indium arsenide, and
also when the crystals are etched. The aim of wastewater
treatment for arsenic is to remove arsenic from the water in the
form of an insoluble sludge, which may then be disposed of in a
manner which keeps it permanently segregated from the
environment.
Probably the most common technique used today for arsenic
treatment, as discussed in the wastewater treatment literature,
is alkaline precipitation with lime followed by clarification.
This has been reported to reduce arsenic concentrations to the 1-
10 milligrams per liter range. The addition of coagulants such
as ferric sulfate or ferric chloride can further reduce the
concentration of arsenic; levels of 0.05 milligrams per liter
have been reported in the literature. Some additional removal
can then be achieved using a filtration polishing step.
A general discussion of the technologies of precipitation,
clarification and filtration was presented in the previous
subsection dealing with the treatment of fluoride in wastewater.
The use of filtration technology has not been demonstrated at any
plant, in this industry and, as with fluoride, the technology
would be expected to provide only minimal further reduction of
arsenic in plant effluents.
7.2.4 Total Toxic Organics Treatment
The sources of toxic organics in the Semiconductor subcategory
are solvents used for drying of wafers, developing photoresist,
stripping of photoresist, and cleaning. In the Electronic
Crystals subcategory, the source of toxic organics is the use of
solvents for cleaning, degreasing and drying of crystals.
The primary technique in these industries for controlling the
discharge of toxic organics is the segregation of spent solvents
for contract hauling (disposal) or for sale to companies which
purify the solvents in bulk for resale. This control
7-5
-------
technology of solvent management also includes good housekeeping
practices such as controlling leaks and spills.
Data from the Semiconductor subcategory has indicated that the
control technology of solvent management will control the
discharge of total toxic organics. Figure 7-1 graphically
presents total toxic organic concentrations of raw waste streams
sampled at twelve semiconductor plants (reference Table 5-3).
Those plants which were observed to have good solvent collection
and disposal procedures had total organic discharge concen-
trations of 0.47 milligrams per liter or less. Some organic
solvents and chemicals will be discharged as dragout on the
rinsed wafer; however, the dragout concentrations of organics are
minimal as evidenced by the low concentrations of total toxic
organics discharged when effective collection and disposal is
used. Those plants that were known to have a less effective
procedure for solvent collection and disposal had total toxic
organic concentrations of 1.6 milligrams per liter and greater.
To further point out the need for effective solvent management,
Table 7-1 presents data from individual process streams and
associated effluent streams sampled at two semiconductor
facilities. Concentrations of total toxic organics in these
streams range from less than 0.01 milligrams per liter to 0.085
milligrams per liter. The effluent streams sampled at the same
plants for the same sampling period have total toxic organic
concentrations of 1.613 and 245.3 milligrams per liter. If total
toxic organic concentrations in the effluent streams were caused
by dragout on the wafer and the carrier boat (i.e. process rinse
streams), the value for total toxic organics in these streams
would be much higher. Since this is not the case, toxic organics
must be entering the effluent stream from direct solvent
discharge.
TABLE 7-1 / '
TTO ANALYSIS OF PROCESS STREAMS
AND EFFLUENT STREAMS
Plant 04294 TTO mg/1
Develop Rinse 0,085
Etch Rinse <0.01
Resist Strip Rinse 0.021
Effluent 245.3
Plant 43.061 TTO mg/1
Oxide Rinse . 0.034
Resist Strip Ririse <0.01
Metal Etch Rinse 0.066
Cleaning Solution Rinse <0.01
Effluent / 1.613
Treatment of toxic organics from wastewater prior to discharge
can be accomplished by the technology of carbon adsorption.
7-6
-------
z
o
QC
H
LLJ
U
Z
o
u
10-
9 -
8 -
7 -
6 -
5 -
4 -
3 -
2 -
1 H
t t
13.3 O O 245.0
O 7.9
O 5.4
O 4.7
O 2.1
O "1.6
O 0.47
O 0 Q O
20
I
40
I
60
80
100%
ORDER OF QCCURANCE %
FIGURE 7-1 TOTAL TOXIC ORGANICS IN RAW WASTE AT TWELVE SEMICONDUCTOR PLANTS
7-7
-------
Frequently used in advanced wastewater treatment, adsorption is a
process in which soluble substances become chemically or
physically bonded to a solid surface. In operation, wastewater,
relatively free of suspended matter, is passed through a chamber
containing activated carbon which has a high capacity for
adsorbing organic substances from the stream. Once the capacity
of the carbon is exhausted, it must be replaced or regenerated.
The effectiveness of carbon in removing specific .organics varies
and is dependent on molecular weight and polarity of the
molecules, and on operating conditions such as contact time,
temperature and carbon surface area. EPA isotherm tests have
indicated that activated carbon is very effective in adsorbing 65
percent of the toxic organic pollutants and is reasonably
effective for another 22 percent. However such treatment can
only reduce any specific organic to between 0.05 and 0.1
milligrams per liter, and TTO for the E&EC category consists of
the sum of more than 20 organic compounds. Therefore at plants
practicing good solvent management, only minimal, if any, further
reduction of TTO could be expected .using activated carbon because
at these plants the total of all toxic organics would only be
0.47 milligrams per liter.
7.3 TREATMENT AND CONTROL OPTIONS \„ ,
For the purpose of establishing effluent limitations and
evaluating the costs of wastewater treatment and control for the
industry, the Agency considered the previously described
technologies and identified the following six system options;
Option 1: Neutralization for pH control and solvent
management for control of toxic organics. Solvent
management is not a treatment system, but rather
an in-plant control which consists of minor piping
modifications to collect used solvents for resale
or contract disposal.
Option 2; Option 1 plus end-of-pipe precipitation/clari-
fication for treatment of arsenic, fluoride, and
total suspended solids (TSS).
Option 3: Option 1 plus in-plant treatment (precipita-
tion/clarification) of the concentrated fluoride
stream.
Option 4: Option 2 plus recycle of the treated effluent
stream to further reduce fluoride.
Option 5: Option 2 plus filtration for reduction of
fluoride, arsenic, and suspended solids.
Option 6: Option 5 plus carkjon adsorption to reduce toxic
organic concentrations.
These options do not, in all cases, apply to both subcategories.
7-8
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SECTION 8
SELECTION OF APPROPRIATE CONTROL AND
TREATMENT TECHNOLOGIES AND BASES FOR
LIMITATIONS
Proposed discharge regulations for the Semiconductor subcategory and
the Electronic Crystals subcategory are presented in this section.
The technology basis and the numerical basis are also presented for
each regulation, in addition to the statistical methodology used to
develop limitations.
8.1 SEMICONDUCTOR SUBCATEGORY
8.1.1 Best Practicable Control Technology Currently Available (BPT)
TABLE 8-1
PROPOSED BPT LIMITATIONS
SEMICONDUCTORS
Pollutant
Long-term
Average
(LTA)
(mg/1)
30-day
Average
Daily Maximum
VF
Limit (mg/1)
VF Limit (mg/1)
pH in range 6-9
Total Toxic
Organics
0.47
The Agency is not proposing 30-day limitations for reasons
presented below.
EPA is proposing BPT based on Option 1 which consists of neutra-
lization and solvent management. Solvent management is widely
practiced and will reduce the amount of toxic organics presently being
discharged by approximately 80,000 kilograms per year. For the
approximately twenty-five percent (25%) of the facilities which do not
already collect used solvents, compliance costs should be minimal
because the solvents can be sold to reclaimers. Neutralization is
practiced by all facilities subject to BPT and therefore facilities
will not incur additional costs for compliance.
-------
Option 2 was not selected because, in the Semiconductor subcategory,
Option 3 can be substituted for and is also less expensive than Option
2. Fluoride in this industry is primarily generated from a particular
process stream, hydrofluoric acid etching, and in-plant treatment
eliminates the need for end-of-pipe treatment of all process waste-
water as in Option 2. Option 3 was not selected because it is more
appropriately reserved for consideration under BAT. Options 4, 5,
and 6 were not selected for the reasons provided under the BAT
discussion.
pH — Properly operated end-of-pipe neutralization of wastewater will
ensure discharges in the pH range of 6 to 9.
Total Toxic Organics (TTO) — Sampling of wastewaters from the Semi-
conductor subcategory has indicated that the control technology of
solvent management will control the discharge of total toxic organics.
Data presented in Section 7 showed a distinct increase in TTO at
plants not practicing good solvent management.
The Agency has used the data in Table 5-3 (p.5-13) as the basis for
proposing BPT limitations for TTO. The daily maximum limit for TTO
is thus being proposed at 0.47 milligrams per liter. This limit re-
flects the highest effluent concentration of TTO found at plants
practicing solvent management. The Agency has chosen not to establish
a 30-day average limitation primarily because solvent management is
not a treatment technology and with proper solvent management effluent
concentrations would not be expected to vary significantly from the
daily maximum. For example, three days of effluent sampling at one
plant practicing good solvent management showed TTO concentrations of
0.44, 0.40, and 0.47 milligrams per liter. In addition, no lonq-
term monitoring data are available for toxic organics in this industry,
8.1.2 Best Available Technology Economically Achievable (BAT)
TABLE 8-2
PROPOSED BAT LIMITATIONS
SEMICONDUCTORS
LTA 30-day Average Daily Maximum
Pollutant (mg/1) VF Limit (mg/1) VF Limit (mg/lT
Total Toxic Organics 0.47
Fluoride 14.5 1.2 17.4 2.2 32
8-2
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For BAT, EPA is proposing limitations based on Option 3. This
technology consists of neutralization and solvent management (Option
1) plus in-plant precipitation/clarification of the concentrated
fluoride stream. Contract hauling of the concentrated fluoride stream
is an acceptable alternative to treatment as a means of achieving
compliance.
Option 4 (Option 1 plus end-of-pipe precipitation/clarification
followed by a recycle of the treated effluent) was not selected
because very few facilities have been able to solve serious
operational problems associated with recycling. Therefore Option 4 is
not demonstrated in this industry. However, facilitiesjlocated in
areas which experience water shortages are encouraged to investigate
this technology option. Option 5 (Option 1 plus end-of-pipe
precipitation/clarification followed by filtration) was not selected
because it will only achieve a three (3) percent increase in fluoride
reduction while at the same time significantly increasing treatment
costs to the facilities. Option 6 (Option 5 plus carbon adsorption)
was not selected because the vast majority of facilities practicing
solvent management would not discharge treatable concentrations of
toxic organics.
The bases for pH and total toxic organics (TTO) limitations were
presented in Section 8.1.1. These limits do not change for BAT. The
basis for fluoride limits is presented below.
Fluoride — Proposed fluoride limitations are based on long term self-
monitoring data submitted by one semiconductor facility (Plant 30167)
utilizing a hydroxide precipitation/clarification system. A
statistical analysis of daily concentrations of fluoride in the
effluent was conducted to derive the long term average concentration
and variability factors for use in establishing proposed limitations.
The statistical methodology is presented in Section 8.3. Table 8-3
summarizes the analysis of the historical performance data.
TABLE 8-3
HISTORICAL PERFORMANCE DATA ANALYSIS OF
EFFLUENT FLUORIDE WITH HYDROXIDE
PRECIPITATION/CLARIFICATION SYSTEM
Number of
Data Points
281
Average
Concentration mg/1
14.5
Variability Factors
Daily 30-Day
2.2
1.2
J-3
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8.1.3 Best Conventional Pollutant Control Technology (BCT)
TABLE 8-4
PROPOSED BCT LIMITATIONS
SEMICONDUCTORS
Pollutant
LTA
(mg/1)
30-day
Average
Daily Maximum
VFLimit (mg/1)
VF Limit (mg/1)
pH in range 6-9
For BCT, EPA is proposing to regulate pH based on the BPT technology,
because BPT achieves the maximum feasible control for pH. since BPT
is also the minimal level of control required, no possible application
of the BCT cost test could result in BCT limitations more stringent
than those proposed. There are no other conventional pollutants of
concern in the Semiconductor subcategory as discussed in Section 6.
8.1.4 New Source Performance Standards (NSPS)
TABLE 8-5
PROPOSED NSPS LIMITATIONS
SEMICONDUCTORS
Pollutant
LTA
(mg/1)
30-day
Average
Daily Maximum
VF
Limit (mg/1)
VF Limit (mg/1)
pH in range
Total Toxic
Fluoride
6-9
Organics
14.5
1.2
17.4
2.2
0.47
32
8-4
J
-------
For NSPS, the Agency is proposing limitations based on solvent
management, neutralization, and precipitation/clarification of the
concentrated fluoride stream (Option 3). These technologies are
equivalent to BAT for control of toxic organics and fluoride, and BCT
for control of pH. Other options were not selected for reasons
previously presented under BAT.
Proposed NSPS limitations are the same as those proposed for BAT with
the inclusion of pH in the range of 6 to 9. The bases for those
limitations were presented in Section 8.1.2.
8.1.5
Pretreatment Standards for New and Existing Sources (PSES
and PSNS)
TABLE 8-6
PROPOSED PSES AND PSNS LIMITATIONS
SEMICONDUCTORS
Pollutant
LTA
(mg/1) VF
30-day
Averaqe Daily Maximum
Limit (mg/1) VF
Limit (mg/1)
Total Toxic Organics
0.47
For PSES and PSNS, the Agency is proposing TTO (total toxic organics)
limitations based on solvent management. Since biological treatment
at POTWs does not achieve removal equivalent to BAT for TTO, pass
through occurs. Accordingly, EPA is proposing PSES and PSNS based on
technology equivalent to BAT for reduction of TTO. The Agency is not
proposing pretreatment standards for fluoride.
Proposed PSES and PSNS limitations are the same as those proposed for
BPT/BAT except that pH is not regulated for pretreatment. The basis
for TTO limitations was presented in Section 8.1.1.
1-5
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8.2 ELECTRONIC CRYSTALS SUBCATEGUttY
8.2.1 Best Practicable Control Technology Currently Available (BPT)
TABLE 8-7
PROPOSED BPT LIMITATIONS
ELECTRONIC CRYSTALS
Pollutant
LTA
(mg/1)
30-day
Average
VF Limit (mg/1)
Daily Maximum
VF Limit (mg/1)
pH in range 6-9
Total Toxic Organics
Arsenic*
Total Suspended
Solids
Fluoride
0.
18.
14.
51
2
5
1.
1.
1.
3
26
2
0.
22.
17.
68
9
4
3.
3.
2.
7
35
2
0.
1.
61.
32
47
89
0
* Arsenic limitations are applicable only to producers of gallium
arsenide and indium arsenide crystals.
EPA is proposing BPT based on Option 2. This technology consists of
Option 1 (solvent management and end-of-pipe neutralization) plus end-
of-pipe precipitation/clarification. These technologies control pH,
toxic organics, total suspended solids (TSS), fluoride, and arsenic.
With the exception of solvent management, these treatment technologies
have already been installed at all electronic crystal facilities
subject to BPT. Therefore, since facilities can sell used solvents to
reclaimers, compliance with BPT should result in minimal or no costs.
Arsenic is only being regulated at facilities which manufacture
gallium or indium arsenide crystals. Total toxic organic limitations,
rather than limitations on each toxic organic pollutant, will be set
for the same reasons explained under BPT for the Semiconductor
subcategory.
8-6
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Option 3 was not selected because this technology is an in-plant
control for only one process stream, hydrofluoric acid etching, and as
such, will not control all wastewater sources of arsenic and TSS.
Option 4 (Option 1 plus end-of-pipe precipitation/clarification
followed by a recycle of the treated effluent) was not selected
because very few facilities have been able to solve serious
operational problems associated with recycling. Therefore Option 4 is
not demonstrated in this industry. However, facilities located in
areas which experience water shortages are encouraged to investigate
this technology option. Option 5 (Option 1 plus end-of-pipe
precipitation/clarification followed by filtration) was not selected
for arsenic because the Agency has no data available to demonstrate
that filtration will further reduce arsenic discharges. This option
was also not selected for fluoride because, as previously stated under
BAT for Semiconductors, filtration would only reduce fluoride by three
percent while significantly increasing treatment costs to the
facilities. Option 6 (Option 5 plus carbon adsorption) was not
selected because the vast majority of facilities practicing solvent
management would not discharge treatable concentrations of toxic
organics.
The bases for pH, total toxic organics (TTO) and fluoride limitations
were presented in Section 8.1. for the semiconductor subcategory. The
bases for arsenic and suspended solids limitations are presented
below.
Arsenic — Only limited data are available from the Electronic
Crystals subcategory for the treatment of arsenic-bearing wastes.
Therefore, transfer of technology from the Non-Ferrous Metals
industrial category is being used for proposing arsenic limitations.
The rationale for transferring technology from this industry is (1)
the treatment technology used in the Non-Ferrous Metals industry for
reduction of arsenic is the same as that proposed for electronic
crystals, and (2) the raw waste arsenic concentrations (1-10
milligrams per liter) found in non-ferrous metals wastewater compare
reasonably with those found in electronic crystals wastes.
Monitoring data were submitted from one non-ferrous metals plant using
a lime precipitation/clarification treatment system to control arsenic
discharge, the same technology as Option 2. Excluded from the data
base were data where pH was less than 7.0 or TSS was greater than 50
milligrams per liter; data points where the treated value was greater
than the raw value; and data points where the raw value was too low to
ensure pollutant removal. A statistical analysis of daily concen-
trations of arsenic in the treated effluent was conducted to derive
long-term average concentration and variability factors for use in
proposing limitations. Table 8-8 summarizes the analysis of the
monitoring data.
1-7
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TABLE 8-8
HISTORICAL PERFORMANCE DATA ANALYSIS OF EFFLUENT ARSENIC
WITH HYDROXIDE PRECIPITATION/CLARIFICATION
Number of
Data Points
111
Long-Term
Average
0.51
Variability Factors
Daily 30-Day
3.7
1.3
Total Suspended Solids — Proposed TSS limitations in Table 8-6
represent a transfer of technology from the Metal Finishing industrial
category. The rationale for transferring technology from this
industry is (1) _ the raw waste TSS concentrations are similar to those
found in electronic crystals wastes, (2) the treatment technology used
for solids reduction in the metal finishing industry is the same as
that proposed for electronic crystals, and (3) several electronic
crystals facilities also conduct metal finishing operations.
The average effluent concentration of 18.2 milligrams per liter was
derived from EPA sampling data from numerous metal finishing plants
practicing solids removal by clarification technology. Excluded from
the data base were effluent TSS concentrations greater than 50
milligrams per liter, since this represents a level above which no
well-operated treatment plant in this industry should be operating.
The variability factors of 1.26 and 3.35 each represent the median of
variability factors from 17 metal finishing plants with long-term
data.
8.2,2 Best Available Technology Economically Achievable (BAT)
TABLE 8-9
PROPOSED BAT LIMITATIONS
ELECTRONIC CRYSTALS
Pollutant
Total Toxic Organics
Arsenic*
Fluoride
LTA
(mg/1)
0.51
14.5
VF
1.3
1.2
30-day
Average
Limit (mg/1)
0.68
17.4
Daily
Maximum
VF Limit (mg/1)
3.7
2.2
0.47
1.89
32
Arsenic limitations are applicable only to producers of gallium
arsenide and indium arsenide crystals.
J-8
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For BAT, EPA is proposing limitations based on the BPT technology
(Option 2). Option 3 was not selected for the same reason presented
above. Options 4, 5, and 6 were not chosen for reasons explained
under BPT (Section 8.2.1).
The bases for arsenic, fluoride, and total toxic organics (TTO)
limitations were presented in Section 8.2.1 under BPT. These
limitations do not change for BAT.
8.2.3 Best Conventional Pollutant Control Technology (BCT)
TABLE 8-10
PROPOSED BCT LIMITATIONS
ELECTRONIC CRYSTALS
Pollutant
LTA
(mg/1)
30-day
Average
VF Limit (mg/1)
Daily Maximum
VF Limit (mg/1)
pH in range 6-9
Total Suspended Solids
18.2
1.26 22.9
3.35
61.0
For BCT, EPA is proposing to regulate pH and TSS based on the BPT
technology. For pH, BPT is equal to BCT for the same reason discussed
under the Semiconductor subcategory.
For TSS, the Agency considered the addition of filtration to BPT
(Option 5), but rejected this technology option because of the minimal
additional reduction of total suspended solids. Based on BPT, the
average removal of TSS for each of the six(6) direct dischargers will
be approximately 5400 kilograms per year. Filtration would only
increase this amount by 100 kilograms per year (0.4 kgs/day) or by
less than two percent (2%), Since there is no other technology option
which would remove significant amounts of TSS, EPA is setting BCT
equal to BPT. Accordingly there is no need to conduct the BCT cost
test.
1-9
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8.2.4 New Source Performance Standards (NSPS)
TABLE 8-11
PROPOSED NSPS LIMITATIONS
ELECTRONIC CRYSTALS
Pollutant
LTA
(mg/1)
30-day
Average
VF Limit (mg/1)
Daily Maximum
VF Limit (mg/1)
pH in range 6-9
Total Toxic Organics 0.47
Arsenic* 0.51 1.3 0.68 3.7 1.89
Fluoride 14.5 1.2 17.4 2.2 32
Total Suspended
Solids 18.2 1.26 22.9 3.35 61.0
* Arsenic limitations are applicable only to producers of gallium
arsenide and indium arsenide crystals.
For NSPS, EPA is proposing limitations based on solvent management,
neutralization, and end-of-pipe precipitation/clarification. These
technologies are equivalent to BAT for toxic pollutants plus fluoride,
and are equivalent to BPT/BCT for conventional pollutants. Other
options were not selected for reasons presented under BAT.
Proposed NSPS discharge limitations for electronic crystals producers
are the same as those proposed for BPT/BAT for toxic pollutants and
fluoride and BPT/BCT for pH and suspended solids. The bases for those
limitations are presented in Sections 8.2.1 and 8.2.3.
8-10
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8.2.5 Pretreatment Standards for New and Existing Sources
(PSNS and P5ES)
TABLE 8-12
PROPOSED PSES AND PSNS LIMITATIONS
ELECTRONIC CRYSTALS
Pollutant
Total Toxic Organics
Arsenic*
LTA
(mg/1)
0.51
30-day
Average
VF Limit (mg/1)
1.3 0.68
Daily
Maximum
VF Limit (mg/1)
3.7
0.47
1.89
* Arsenic limitations are applicable only to producers of gallium
arsenide and indium arsenide crystals.
For PSES and PSNS/ EPA is proposing limitations based on solvent
management, neutralization, and end-of-pipe precipitation/clari-
fication (Option 2) for the facilities which manufacture gallium or
indium arsenide crystals. For facilities which only manufacture other
types of crystals, PSES and PSNS are based on solvent management.
Option 2 will control both toxic organics and arsenic, while solvent
management will control toxic organics. Both TTO and arsenic will be
removed to a greater extent by BAT than by biological treatment at
POTWs. Therefore, PSES and PSNS are required to prevent pass through.
The Agency is not proposing pretreatment standards for fluoride.
Proposed PSES and PSNS limitations for electronic crystals producers
are the same as those proposed for BPT except that pH and TSS are not
regulated for pretreatment. The bases for limitations were presented
in Section 8.2.1.
j-n
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8.3 STATISTICAL ANALYSIS
Statistical analysis of discharge monitoring data allows a
quantitative assessment of the variability of effluent concentrations
following wastewater treatment. Long term data, collected on a daily
basis, reflect the fact that even properly operating treatment systems
experience fluctuations in pollutant concentrations discharged. These
fluctuations result from variations in process flow, raw waste loading
of pollutants, treatment chemical feed, mixing effectiveness during
treatment, and combinations of these or other factors.
It is found that the day-to-day variability in effluent
concentrations includes occasional large changes while averages for
each month's data experience smaller fluctuations. The variability in
the monthly average is usually found to be well described by the
normal distribution, with values evenly distributed around the mean.
However daily fluctuations are most often described by a lognormal or
asymmetric distribution. This reflects the fact that an effluent
value may rise considerably from the mean level but may fall only to
the value of zero.
In the development of effluent limitations and standards, allow-
ance for the variation in the effluent concentration of a pollutant is
accounted for by the establishment of a variability factor which is
always greater than 1.0. This factor, calculated based on the type of
distribution of daily or monthly average concentrations, is then
multiplied by the mean pollutant concentration to yield a performance
standard or effluent limitation that is reasonable for a particular
treatment technology and a particular type of waste.
The following paragraphs describe the statistical methodology
used to calculate the variability factors and to establish limita-
tions for pollutant concentrations.
8.3.1 Calculation of Variability Factors
Variability factors are used to account for effluent
concentration fluctuations in the establishment of reasonable effluent
limitations. Calculation of these factors is discussed here, while
their application is discussed under the next heading.
Daily Pollutant Level Measurements — These calculations were based on
the following three assumptions: (1) the daily pollutant concen-
tration data are lognormally distributed; (2) monitoring was conducted
in a responsible fashion, such that the resulting measurements can be
considered statistically independent and amenable to standard
statistical procedures; (3) treatment facilities and monitoring
techniques were substantially constant throughout the monitoring
period. The lognormality assumption is well established for daily
8-12
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sampling and has been demonstrated in the analysis of effluent samples
from many industries. The other two assumptions, which concern self-
consistency of the data, were supported by direct examination of the
data and by consideration of supplemental information accompanying the
data.
The variability factor is especially useful with lognormally
distributed pollutant levels because its value is independent of the
long-term average, and depends only upon the day-to-day variability of
the treatment process and the expected number of unusually high
discharge periods. For a lognormal population the variability factor
(P/A), the performance standard P, and the long-term average A, are
related by
In (P/A) = s1(Z - s'/2)
where In represents the natural logarithm, S1 is the estimated
standard deviation of the natural logarithms of pollutant
concentrations, and Z is a factor derived from the standard normal
distribution.
The value of Z selected for the calculation of daily performance
standards is 2.326, which corresponds to the 99th percentile of the
lognormal distribution. Thus only one percent of pollutant
concentrations is expected greater than the performance standard P.
This assumes the continued proper operation of the wastewater
treatment procedures, and is equivalent to allowing a plant in normal
operation 3 or 4 exceedances per year.
To estimate the variability factor for a particular set of
monitoring data, where the method of moments is used, S1 is calcu-
lated as the square root of In (1.0 + (CV2)). Here CV is the sample
coefficient of variation, and is the ratio of sample standard
deviation to sample mean.
30-Day Averages Of Pollutant Levels -- While individual pollutant
concentrations are assumed to be lognormally distributed, 30-day
averages are not assumed to fit this model. Instead, the statistical
"Central Limit Theorem" provides justification for using the normal
distribution as the appropriate model. Thus the 30-day average values
are expected to behave approximately as random data from a normal
distribution, with mean A and standard deviation S11.
For any probability (k percent) that a particular monthly average
will not exceed the performance standard P, there' corresponds a value
Z such that
P * A + Z (S1 ')
1-13
-------
The variability factor is
P/A = 1.0 + Z(S"/A)
and is estimated by
P/A = 1.0 + Z(CV)
In this equation, Z is frequently given the value of 1.64, to cor-
respond with a probability, k, of 95 percent that a monthly average is
within guidelines. CV is the estimated coefficient of variation of
the 30-day averages. It may be computed by Sx/A, where S is the
standard deviation of sample measurements and x is the mean of sample
measurements.
Hence one obtains the performance standard P by multiplying the
mean of the 30-day averages by the variability factor. An inter-
pretation is that for the selected value of Z = 1.64 corresponding to
the 95th percentile of a normal distribution, 19 of every 20 30-day
averages will not exceed P.
8.3.2 Calculation of Effluent Limitations
The effluent limitations are based on the premise that a plant's
treatment system can be operated to maintain average (mean) effluent
concentrations equal to those determined from the sampled data from
visited plants. As explained in the introduction, the day-to-day
concentrations will fluctuate below and above these average con-
centrations. Thus the effluent daily limitations must be set far
enough above the average daily concentrations that plants with
properly operated treatment systems will not exceed them (99 percent
of the time), and the 30-day average limitations must be set
sufficiently above the mean of 30-day averages so that no more than 5
percent of 30-day averages will exceed the limitations, again assuming
a properly operated treatment system. The effluent limitations were
obtained for each parameter by multiplying the average concentration
(based on visit data) by the appropriate daily and 30-day variability
factors (based on historical data) to obtain the effluent limitations.
Expressed as equations,
Daily maximum limitation = VFj) x A
30-day average limitation = VF3Q X A
In these equations, VFp is the daily maximum variability factor, VF3Q
is the 30-day average variability factor, and A is the average
concentration based on plant visit data.
8-14
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SECTION 9
COST OF WASTEWATER TREATMENT AND CONTROL
This section presents estimates of the costs of implementation of
wastewater treatment and control systems for the Semiconductor
and Electronic Crystals subcategories of the Electrical and
Electronic Components category. The systems for which cost
estimates are presented are those options selected by the Agency
as the technical bases for discharge regulations as presented in
Section 8. The cost estimates then provide the basis for
probable economic impact of regulation on the industry.
The general approach or methodology for cost estimating is
presented below followed by the treatment and control option
costs. Finally, this section addresses non-water quality aspects
of wastewater treatment and control including air pollution,
noise pollution, solid wastes and energy considerations.
9.1 COST ESTIMATING METHODOLOGY
Costs involved in setting up and operating a wastewater treatment
unit are comprised of investment costs for construction, equip-
ment, engineering design, and land, and operating costs for
energy, labor, and chemicals. There are also costs for disposing
of sludge and for routine analysis of the treated effluent.
The costs presented in this section are based on model plants
which closely resemble the types and capacities of waste
treatment facilities needed for each product subcategory. Model
plants are not set up as exemplary plants, but as typical of
sufficient design to represent the range of plants and treatment
facilities present in the industry. Data are based on plant
visits and contacts with industries to verify treatment
practices and to obtain data on size, wastewater flow, and solid
waste disposal systems. The differences in treatment capacities
are reflected in the choice of model plants which are presented
for different flow rates covering the existing range of flows at
average concentrations of pollutants.
Unit process equipment costs were assembled from vendors and
other commercial sources. Information on the costs of equipment,
the present costs of chemicals and average costs for hauling
sludge was developed with data from industry, engineering firms,
and equipment suppliers. Appropriate factors were applied to
determine total investment costs and annual costs.
9-1
-------
The costs which will actually be incurred by an individual plant
may be more or less than presented in the cost estimate. The
major variations in treatment costs between plants res/alt from
differences in pollutant concentrations and site dependent
conditions, as reflected in piping lengths, climate,^land
availability, water and power supply and the location of the
point of final discharge. In addition, solids disposal costs and
material costs will vary depending on geographical locations.
The following assumptions were employed in the cost development:
1. All non-contact cooling water was excluded from
treatment and treatment costs.
2. Source water treatment, cooling tower and boiler
blowdown discharges were not considered process
wastewater.
3. Sanitary sewage flow is excluded.
4. The treatment facilities were assumed to operate 8
hrs/day, 260 days per year for small plants (below
60,000 GPD); 24 hrs/day, 260 days per year for medium-
sized plants (60,000 GPD to 200,000 GPD); and 24
hrs/day 350 days per year for large plants (greater
than 200,000 GPD).
5. Excluded from the estimates were any costs associated
with permits, reports or hearings required by
regulatory agencies.
Investment costs are expressed in end of year 1979 dollars to
construct facilities at various wastewater flow rates. Opera-
tion, maintenance, and amortization of the investment are
expressed as base level annual costs.
9.1.1 Direct Investment Costs for Land and Facilities
Types of direct investment costs for waste treatment facilities
and criteria for estimating major components of the model plants
are presented below.
Construction Costs — Construction costs include site
preparation, grading, enclosures, buildings, foundations,
earthworks, roads, paving, and concrete. Since few if any
buildings will be utilized, construction costs have been
calculated using a factor of 1.15 applied to the installed
equipment cost or 2.0 applied to the equipment cost.
9-2
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Equipment Cost — Equipment for wastewater treatment consists of
a combination of items such as pumps, chemical feed systems,
agitators, flocculant feed systems, tanks, clarifiers and
thickeners. Cost tables for these items were developed from
vendor's quotations for a range of sizes, capacities and motor
horsepowers. Except for large size tanks and chemical storage
bins, the cost represents packaged, factory-assembled units.
Critical equipment is assumed to be installed in a weatherproof
structure. Chemical storage feeders and feedback controls
include such items as probes, transmitters, valves, dust filters
and accessories. Critical pumps are furnished in duplicate as a
duty and a spare each capable of handling the entire flow.
Installation Costs — Installation is defined to include all
services, activities, and miscellaneous material necessary to
implement the described wastewater treatment and control system,
including piping, fittings, and electrical work. Many factors
can impact the cost of installing equipment modules. These
include wage rates, manpower availability, who does the job
(outside contractor or regular employees), new construction
versus modification of existing systems, and site-dependent
conditions (e.g., the availability of sufficient electrical
service). In these estimates, installation costs were chosen for
each model based upon average site conditions taking into
consideration the complexity of the system being installed. An
appropriate cost is allowed for interconnecting piping, power
circuits and controls.
Monitoring Equipment — It is assumed that monitoring equipment
will be installed at the treated effluent discharge point. It
will consist of an indicating, integrating, and recording type
flow meter, pH meter, sensor, recorder, alarms, controls and an
automatic sampler.
Land — Land availability and cost of land can vary
significantly, depending upon geographical location, degree of
urbanization and the nature of adjacent development. Land for
waste treatment is assumed to be contiguous with the production
plant site. For the purpose of the report land is valued at
$12,000 per acre.
9-3
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Investment Costs for Supporting Services — Engineering design
and inspection are typical services necessary to advance a
project from a concept to an operating system. Such services
broadly include laboratory and pilot plant work to establish
design parameters, site surveys to fix elevation and plant
layout, foundation and groundwater investigation, and operating
instructions, in addition to design plans, specifications and
inspection during construction. These costs, which vary with job
conditions, are often estimated as percentages of construction
costs, with typical ranges as follows:
Preliminary survey and construction surveying
Soils and groundwater investigation
Laboratory and pilot process work
Engineering design and specifications
Inspection during construction
Operation and maintenance manual
1 to 2 %
1 to 2 %
2 to 4 %
7 to 12%
2 to 3 %
1 to 3 %
From these totals of 14 to 26 percent, a mid-value of 20 percent
of in-place construction (installed equipment and construction)
cost has been used in this study to represent the engineering and
design cost applied to model plant cost estimates.
The contractor's fee and contingency, usually expressed as a
percentage of in-place construction cost, includes such general
items as temporary utilities, small tools, field office overhead
and administrative expense. The contractor is entitled to a
reasonable profit on his activities and to the cost of interest
on capital tied up during construction. Although not all of the
above cost will be incurred on every job, an additional 50
percent of the in-place construction cost has been used to cover
related cost broadly described as contractor's fees, incidentals,
overhead, and contingencies.
9.1.2 Annual Costs
Operation and Maintenance Costs -- Annual operation and
maintenance costs are described and calculated as follows:
Labor and Supervision Costs:
Personnel costs are based on an hourly rate of $20.00. This
includes fringe benefits and an allocated portion of costs for
management, administration and supervision. Personnel are
assigned for specific activities as required by the complexity of
the system, ranging from 1-8 hours per day.
9-4
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Energy Costs:
Energy costs are based on the cost of $306.00 per horsepower
operating 24 hours per day and 350 days per year. For batch
processes appropriate adjustments were made to suit the
production schedule. The cost per horsepower year is computed as
follows:
where
kw)
Cy = 1.1 (0.745 HP x Hr. x Ckw)/(E x P)
Cy * Cost per year
HP = Total Horsepower Rating of Motor {1 HP = 0.7457kw)
E = Efficiency Factor (0.9)
P = Power Factor (1.00)
Hr. = Annual Operating Hours (350 x 24 = 8400)
Ckw = Cost per Kilowatt-Hour of Electricity ($0.040)
Note: The 1.1 factor in the equation represents allowance for
incidental energy used such as lighting, etc. It is assumed that
no other forms of energy are used in the waste treatment system.
Chemicals:
Prices for the chemicals were obtained from vendors and the
Chemical Marketing Reporter. Unit costs of common chemicals
delivered to the plant site are based on commercial grade of the
strength or active ingredient percentage with prices as follows:
Hydrated Lime (Calcium Hydroxide) Bulk
Flocculant
$80/Ton
$ 2/Lb
Maintenance:
The annual cost of maintenance is estimated as ten percent (10%)
of the investment cost, excluding land.
Taxes and Insurance:
An annual provision of three percent of the total investment cost
has been included for taxes and insurance.
9-5
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Residual Waste Disposal:
Sludge disposal costs can vary widely. Chief cost determinants
include the amount and type of waste. Off-site hauling and
disposal costs are taken as $20/YD^ for bulk hauling, with
appropriate increases for small quantities in steel containers.
Information available to the Agency indicates that the selected
technologies for controlling pollutants in this industry will not
result in hazardous wastes as defined by RCRA.
Monitoring, Analysis and Reporting
The manpower requirements covered by the annual labor and
supervision costs include those activities associated with the
operation and maintenance of monitoring instruments, recorder and
automatic samplers as well as the taking of periodic grab
samples. Additional costs for analytical laboratory services
have been estimated for each subcategory assuming that sampling
takes place three times a week at the point of discharge. A cost
of $7500/year has been used for monitoring analyses and
reporting.
Amortization — Amortization of capital costs (investment costs)
are computed as follows:
CA = B (r(l+r)n)/((l+r)n-l)
where CA = Annual Cost
B = Initial amount invested excluding cost of land
r = Annual interest rate (assumed 13 percent)
n « Useful life in years
The multiplier for B in equation (1) is often referred to as the
capital recovery factor and is 0.2843 for the assumed overall
useful life of 5 years. No residual or sludge value is assumed.
9,1.3 Items not Included in Cost Estimate
Although specific plants may encounter extremes of climate, flood
hazards and lack of water, the cost of model plants have been
estimated for average conditions of temperature, drainage and
natural resources. It is assumed that any necessary site
drainage, roads, water development, security, environmental
studies and permit costs are already included in production
facilities costs. Therefore, the model costs are only for
9-6
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facilities, suppliers and services directly related to the
treatment and disposal of waterborne wastes, including land
needed for treatment and on-site sludge disposal. Air pollution
control equipment is not included, except for dust collectors
associated with treatment, chemical transfer and feeding. Raw
wastes from various sources are assumed to be delivered to the
treatment facility at sufficient head to fill the influent
equalization basin, and final effluent is discharged by gravity.
Cost of pumps, pipes, lines etc., necessary to deliver raw
wastewater to the treatment plant or to deliver the treated
effluent to the point of discharge are not included in the cost
estimates.
9.2 COST ESTIMATES FOR TREATMENT AND CONTROL OPTIONS
Table 9-1 summarizes the treatment and control options selected
as the bases for effluent limitations and standards for the
Semiconductor and Electronic Crystals Subcategories.
TABLE 9-1 TREATMENT AND CONTROL OPTIONS
SELECTED AS BASES FOR
EFFLUENT LIMITATIONS
Subcategory
Semiconductors
Electronic Crystals
9.2.1 Option 1
BPT BAT BCT/NSPS Pretreatment
1313 1
2 2 22 1+2
This treatment option is defined as neutralization of plant
discharge and solvent management to control toxic organics.
Since all direct dischargers in both the Semiconductor and
Electronic Crystals subcategories currently neutralize their
discharges, no costs of neutralization will be incurred by the
industry. Also, minimal, if any, costs are associated with
solvent management for the following reasons:
1) Information shows that many facilities can sell spent
solvents to reclaimers;
2) The Agency is not requiring monitoring for TTO (which
could be expensive) in cases where facilities certify
that they do not dump spent solvents.
Based on the above, the costs to a plant for implementation of
Option 1 are assumed to be zero.
9-7
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9.2.2 Option 2
The capital and annual costs of this end-of-pipe precipita-
tion/clarification system are presented in Table 9-2. The range
of model plant wastewater flows reflect the range of flows that
currently exist for the subcategory. Figure 9-1 graphically
presents the annual costs versus plant wastewater flow for this
option.
9.2.3 Option 3
The capital and annual costs of this in-plant precipita-
tion/clarification treatment system for fluoride acid wastes are
presented in Table 9-3. The range of model plant waste flows
reflects the range of flows for this stream as they currently
exist in both subcategories. Figure 9-2 graphically presents
the annual costs versus waste stream flow for this option.
9.2.4 Option 5
The capital and annual costs of adding filtration to end-of-pipe
precipitation/clarification (Option 2) are presented in Table 9-
4. These costs are incremental and therefore only reflect the
additional costs of adding filtration technology.
9.3 ENERGY AND NON-WATER QUALITY ASPECTS
Compliance with the proposed regulations will have no effect on
air, noise, or radiation pollution and will only result in
minimal energy usage. The amount of solid waste generated will
be 7700 metric tons per year. Available information indicates
that the solid waste generated will not be hazardous as defined
in the Resource Conservation and Recovery Act (RCRA). Energy
requirements associated with these regulations will be 100,000
kilowatt-hours per year or only 7.5 killowatt-hours per day per
facility.
Based on the above non-water quality impacts from these regula-
tions, EPA has concluded that the proposed regulation best serves
overall national environmental goals.
9-8
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TABLE 9-2
MODEL PLANT TREATMENT COSTS
OPTION 2
Flow, gpd (I/day)
A. INVESTMENT COSTS
Construction
Equipment in place
including piping,
fittings, electrical
work and controls...
Monitoring equipment
Engineering Design
Incidentals, overhead,
fees , contingencies .
TOTAL INVESTMENT COST _
2,000
(7,570)
S 2,500
28,000
6,000
6,500
15,500
61,500
10,000
(37,850)
$ 7,000
83,000
6,000
18,000
45,000
3,000
162,000
60,000
(227,000)
$ 12,000
142,000
6,000
31,000
77,000
3,000
274_,000
150,000
(568,000)
$ 17,000
202,500
6,000
44,000
110,000
6,000
385,500
200,000
(757,000)
$ 20,200
244,600
6,000
53,000
132,500
6,000
462,300
B. OPERATION AND
MAINTENANCE COST
Labor and supervision
Energy
Chemicals
Maintenance
Taxes and insurance.
Residual waste
disposal
Monitoring, analysis
TOTAL OPERATION AND
MAINTENANCE COST
C. AMORTIZATION OF
INVESTMENT COST
TOTAL ANNUAL COST
11,000
600
200
6,000
2,000
1,500
7,500
28,800
16,632
$ 45,432
11,000
1,000
1,100
16,000
5,000
8,500
7,500
50,100
45,206
$ 95,306
11,000
5,000
4,000
27,500
8,500
52,000
7,500
115,000
76,196
$ 191,196
11,000
6,000
9,500
38,000
12,000
108,000
7,500
192,500
107,897
$ 300,397
11,000
7,000
12,500
46,000
13,800
128,500
7,500
226,300
129,733
$ 356,033
9-9
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i
M
o
40
30
20
o
o
o
o
10
-P 8
0
u
8 10
20
40
60
80 100
200
(gpd)
10
100
FLOW (x 1000)
Figure 9-1
Annual Cost vs. Flow for
Option 2 Technology
500
(I/day)
-------
TABLE 9-3
MODEL PLANT TREATMENT COSTS
OPTION 3
Fluoride Stream Flow, gpd (I/day)
100
(378)
A. INVESTMENT COSTS
Construction $ 3,300
Equipment in place
including piping,
fittings, electrical
work and controls... 40,600
Monitoring equipment
in place 0
Engineering Design
and inspection 8,800
Inc identals, overhead,
fees, contingencies. 8,800
Land 0
TOTAL INVESTMENT COST 61,500
B. OPERATION AND
MAINTENANCE COST
Labor and supervision 5,000
Energy 50^
Chemicals 200
Maintenance 3,100
Taxes and insurance. 1,900
Residual waste
disposal...., 700
Monitoring, analysis
and reporting 1,300
TOTAL OPERATION AND
MAINTENANCE COST 12,150
C. AMORTIZATION OF
INVESTMENT COST 17,500
TOTAL ANNUAL COST $ 29,650
500
(1890)
$ 3,300
40,600
0
8,800
8,800
_0
61,500
20,000
200
1,000
3,100
1,900
3,500
..1,200
30,900
AZf.500
2,500
(9,460)
$ 5,500
67,200
0
14,500
14,500
0
101,700
20,000
350
5,000
5,100
3,050
17,500
1,200
52,200
28,900
$18,400 $ 81,100
6,000
(22,700)
'$ 10,100
121,900
0
19,800
26,400
0
178,200
20,000
700
12,000
8,900
5,300
42,000
1,200
90,100
50,700
_$ 11P,800
9-11
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200
o
o
o
H
100
80
60
I
h-1
NJ
-P
in
O
O
40
20
100
200
400
10GO
2000
6000
600
2000
10,000
(gpd)
(I/day)
Concentrated Fluoride Stream Flow
Figure 9-2
Annual Cost vs. Flow for
Option 3 Technology
-------
TABLE 9-4
MODEL PLANT TREATMENT COSTS
OPTION 5, INCREMENTAL COSTS
Flow, gpd (I/day)
B
INVESTMENT COSTS
Construction $
Equipment in place
including piping,
fittings, electrical
work and controls. . .
Monitoring equipment
Engineering Design
Incidentals, overhead,
fees, contingencies .
TOTAL INVESTMENT COST _£_
OPERATION AND
MAINTENANCE COST
Labor and supervision
Energy
Taxes and insurance.
Residual waste
Monitoring, analysis
TOTAL OPERATION AND
MAINTENANCE COST _£_
AMORTIZATION OF
INVESTMENT COST
TOTAL ANNUAL COST J_
2,000
(7,570)
700
6,700
1,500
3,700
_
12,600
2,000
300
_
1,260
380
3j940
3,580
7,520
10,000
(37,850)
$ 800
7,900
1,700
4,400
_
$ 14,800
2,000
500
_
1,480
440
$ 4,420
4,210
£ 8,630
60,000
(227,000)
$ 1,600
16,000
3,500
8,800
»
$ 29,900
3,000
2,500
_
3,000
900
$ 9,400
8,500
$ 17,900
150,000
(568,000
$ 3,300
33,000
7,200
18,200
_
$ 61,700
4,000
3,000
—
6,200
1,850
$ 15,050
17,540
$ 32,590
200,000
(757,000)
$ 3,800
38,000
8,400
20,900
$ 71,100
4.000
3,500
7,100
2,130
$ 16,730
20,210
36,9_40
9-13
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SECTION 10
ACKNOWLEDGMENTS
The Environmental Protection Agency was aided in the preparation of
this Development Document by Versar Inc. and Jacobs Engineering
Group, Inc. Versar's effort was managed by Mr. Lawrence G. Davies,
with the assistance of Ms. Jean Moore. Jacob's effort was managed
by Ms. Bonnie Parrott.
Mr. Richard Kinch served as Project Officer and Mr. David Pepson
served as the Technical Project Officer during the preparation of
this document. Mr. Jeffrey Denit, Acting Director, Effluent Guide-
lines Division, and Mr. Gary E. Stigall, Branch Chief, Effluent
Guidelines Division, Inorganic Chemicals Branch, offered guidance
and suggestions during this project.
10-1
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SECTION 11
REFERENCES
1. Amick, Charles L., Fluorescent Lighting Manual, McGraw-Hill,
3rd. ed., (1961).
2. Baumann, E.R., Diatomite Filtration of Potable Water, American
Water Works Association, Inc.
3. Beau, R.L. et al.. Transformers for the Electric Power
Industry, McGraw-Hill (1959).
4. Bogle, W.S., Device Development, The Western Electric Engineer,
(July 1973) .
5. Burock, R. et al., Manufacturing Beam Lead, Insulated Gate,
Field Effect Transistor Integrated Circuits, Bell Laboratories
Record, (Jan. 1975).
6. Cockrell, W.D., Industrial Electronics Handbook, McGraw-Hill
(1958).
7. Culver, R.H./ Diatomaceous Earth Filtration, Chemical
Engineering, Vol. 17, No. 12 (Dec. 1975).
8. Elenbaas, W., Fluorescent Lamps and Lighting, (1959).
9. EPA, Final Rule Polychlorinated- Biphenyls Manufacturing,
Processing, Distribution in Commerce, and Use Prohibition,
Federal Register, (May 31, 1979), Part IV.
10. EPA, Support Document/Voluntary Environmental Impact Statement
and PCB Ban Economic Impact Analysis, EPA Office of Toxic
Substances Report, (April, 1979).
11. Forsythe, William E., Fluorescent and Other Gaseous Discharge
Lamps, (1948).
12. Funer, R.E., Letter to Robert Schaeffer, EPA Effluent
Guidelines Div., E.I. DuPont de Nemours and Company. Subject:
Priority pollutant removal from wastewater by the PACT process
at the Chambers Works.
13. Gerstenberg, D. and J. Klerer, Anodic Tantalum Oxide Capacitors
From Reactively Sputtered Tantalum, 1967 Proceedings,
Electronic Comoponents Conference, Sponsored by IEEE, EIA.
11-1
-------
14. Gray, H.J., Dictionary of Physics/ Longmans, Green and Co.,
London (1958).
15. Henney, K. and C. Walsh, Eds., Electronic Components Handbook,
McGraw-Hill (1975).
16. Hewitt, Harry, Lamps and Lighting, American Elsevier Publishing
Co., (1966).
17. Hiyama, S. et al., 3500 uFV Wound-Foil Type Aluminum Solid
Electrolytic Capacitors, 1968 Proceedings, Electronic
Components Symposium, Sponsored by IEEE, EIA.
18. IBM, S/C Manufacturing Overview, IBM, East Fishkill, N.Y.
19. IEEE Standards Committee, IEEE, Standard Dictionary of
Electrical and Electronic Terms, J. Wiley and Sons, (Oct. 1971)
20. Illuminating Engineering Society, IBS Lighting Handbook, 3rd
ed., (1962).
21. Jowett, C.E., Electronic Engineering Processes, Business Books,
Ltd., (1972).
22. Kirk and Othmer, Encyclopedia of Chemical Technology, Vol. 17,
McGraw-Hill, (1968) .
23. Knowlton, A.E., Standard Handbook for Electrical Engineers,
McGraw-Hill, (1957).
24. McGraw-Hill, Dictionary of Scientific and Technical Terms, 2nd
Ed., McGraw-Hill (1978).
25. McGraw-Hill, Encyclopedia of Science and Technology,
McGraw-Hill (1960).
26. Mclndoe, R.W., Diatomite Filter Aids, Pollution Engineering
Magazine.
27. Motorola, Small Signal Wafer PRocessing, Motorola, Phoenix, AZ.
28. Oldham, W.G., The Fabrication of Microelectronic Circuits,
Scientific American (Sept., 1977).
29. Phillips, A.B.E, Transistor Engineering, McGraw-Hill, (1962) .
30, Puchstein, A.F. et al., Alternating Current Machines, J. Wiley,
(1954).
11-2
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31. Transformer Consultants, Why Annual Transformer Oil Testing,
The Consultor, Transformer Consultants, P.O. Box 3575, Akron,
Ohio, 44310 (1978).
32. U.S. Department of Commerce, Bureau of the Census, 1977 Census
of Manufactures, Preliminary Statistics, Bureau of the Census
Reports No. MC 77-1-36 for SIC 3600-3699 Issued 1979.
33. U.S. Government, Public Law 94-469 Toxic Substances Control
Act, {Oct. 11, 1976).
34. Webster's Seventh New Collegiate Dictionary, G & C Merriam Co.,
(1963) .
11-3
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SECTION 12
GLOSSARY
Absorb - To take up matter or radiation.
Act - Federal Water Pollution Control Act.
Activate - To treat the cathode or target of an electron tube in
order to create or increase the emission of electrons.
Adjustable Capacitor - A device capable of holding an electrical
charge at any one of several discrete values.
Adsorption - The adhesion of an extremely thin layer of molecules
(of gas, liquid) to the surface of solids (granular activated
carbon for instance) or liquids with which they are in contact
Aging - Storage of a permanent magnet, capacitor, meter or other
device (sometimes with a voltage applied) until the
characteristics of the device-become essentially constant.
Algicide - Chemicals used to retard the growth of phytoplankton
(algae) in bodies of water.
Aluminum Foil - Aluminum in the form of a sheet of thickness not
exceeding 0.005 inch.
Anneal - To treat a metal, alloy, or glass by a process of heating
and slow cooling in order to remove internal stresses and to
make the material less brittle.
Anode - The collector of electrons in an electron tube.
as plate; positive electrode.
Also known
Anodizing - An electrochemical process of controlled aluminum
oxidation producing a hard, transparent oxide up to several
mils in thickness.
Assembly or Mechanical Attachment - The fitting together of pre-
viously manufactured parts or components into a complete
machine, unit of a machine, or structure.
Autotransformer - A power transformer having one continuous wind-
ing that is tapped; part of the winding serves as the primary
coil and all of it serves as the secondary coil, or vice versa
12-1
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Ballast - A circuit element that serves to limit an electric current
or to provide a starting voltage, as in certain types of lamps,
such as in fluorescent ceiling fixtures.
Binder - A material used to promote cohesion between particles of
carbon or graphite to produce solid carbon and graphite rods or
pieces.
Biochemical Oxygen Demand (BOD) - (1) The quantity of oxygen used in
the biochemical oxidation of organic matter in a specified
time, at a specified temperature, and under specified
conditions. (2) Standard test used in assessing wastewater
quality.
Biodegradable - The part of organic matter which can be oxidized by
bioprocesses, e.g., biodegradable detergents, food wastes,
animal manure, etc.
Biological Wastewater Treatment - Forms of wastewater treatment in
which bacteria or biochemical action is intensified to
stabilize, oxidize, and nitrify the unstable organic matter
present. Intermittent sand filters, contact beds, trickling
filters, and activated sludge processes are examples.
Breakdown Voltage - Voltage at which a discharge occurs between two
electrodes.
Bulb - The glass envelope which incloses an incandescent lamp or an
electronic tube.
Busbar - A heavy rigid, metallic conductor, usually uninsulated, used
to carry a large current or to make a common connection between
several curcuits.
Bushing - An insulating structure including a central conductor, or
providing a central passage for a conductor, with provision for
mounting on a barrier (conducting or otherwise), for the
purpose of insulating the conductor from the barrier and
conducting current from one side of the barrier to the other,
Calcining - To heat to a high temperature without melting or fusing,
as to heat unformed ceramic materials in a kiln, or to heat
ores, precipitates, concentrates or residues so that hydrates,
carbonates or other compounds are decomposed and volatile
material is expelled, e.g., to heat limestone to make lime.
Calibration - The determination, checking, or correction of the
graduation of any instrument giving quantitative measurements.
12-2
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Capacitance - The ratio of the charge on one of the plates of a
capacitor to the potential difference between the plates.
Capacitor - An electrical circuit element used to store charge tem-
porarily, consisting in general of two conducting materials
separated by a dielectric material.
Carbon - A nonmetallic, chiefly tetravalent element found native or
as a constituent of coal, petroleum, asphalt, limestone, etc.
Cathode - The primary source of electrons in an electron tube; in
directly heated tubes the filament is the cathode, and in
indirectly heated tubes a coated metal cathode surrounds a
heater.
Cathode Ray Tube - An electron-beam tube in which the beam can be
focused to a small cross section on a luminescent screen and
varied in position and intensity to produce a visible pattern.
Central Treatment Facility - Treatment plant which co-treats process
wastewaters from more than one manufacturing operation or
co-treats process wastewaters with noncontact cooling water or
with non-process wastewaters (e.g., utility blow-down,
miscellaneous runoff, etc.) .
Centrifuge - The removal of water in a sludge and water slurry by
introducing the water and sludge slurry into a centrifuge. The
sludge is driven outward with the water remaining near the
center. The dewatered sludge is usually landfilled.
Ceramic - A product made by the baking or firing of a nonmetallic
mineral such as tile, cement, plaster, refractories, and brick.
Chemical Coagulation - The destabilization and initial aggregation
of colloidal and finely divided suspended matter by the
addition of a floe-forming chemical.
Chemical Oxidation - The addition of chemical agents to wastewater
for the purpose of oxidizing pollutant material, e.g., removal
of cyanide.
Chemical Oxygen Demand (COD) - (1) A test based on the fact that all
organic compounds, with few exceptions, can be oxidized to
carbon dioxide and water by the action of strong oxidizing
agents under acid conditions. Organic matter is converted to
carbon dioxide and water regardless of the biological
12-3
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assimilability of the substances. One of the chief limitations
is its inability to differentiate between biologically
oxidizable and biologically inert organic matter. The major
advantage of this test is the short time required for
evaluation (2 hours). (2) The amount of oxygen required for
the chemical oxidation of organics in a liquid.
Chemical Precipitation - (1) Formation of insoluble materials
generated by addition of chemicals to a solution. (2) The
process of softening water by the addition of lime and soda ash
as the precipitants.
Chlorination - The application of chlorine to water or wastewater
generally for the purpose of disinfection, but frequently for
accomplishing other biological or chemical results.
Circuit Breaker - Device capable of making/ carrying, and breaking
currents under normal or abnormal circuit conditions.
Cleaning - The removal of soil and dirt (including grit and grease)
from a workpiece using water with or without a detergent or
other dispersing agent.
Coil - A number of turns of wire used to introduce inductance into
an electric circuit, to produce magnetic flux, or to react
mechanically to a changing magnetic flux.
Coil-Core Assembly - A unit made up of the coil windings of a trans-
former placed over the magnetic core.
Coking - (1) Destructive distillation of coal to make coke. (2) A
process for thermally converting the heavy residual bottoms of
crude oil entirely to lower-boiling petroleum products and by-
product petroleum coke.
Colloids - A finely divided dispersion of one material called the
"dispersed phase" (solid) in another material called the
"dispersion medium" (liquid). Normally negatively charged.
Composite Wastewater Sample - A combination of individual samples of
water or wastewater taken.at selected intervals and mixed in
proportion to flow or time to minimize the effect of the
variability of an individual sample.
Concentric Windings - Transformer windings in which the low-voltage
winding is in the form of a cylinder next to the core, and the
high-voltage winding, also cylindrical, surrounds the low-
voltage winding.
12-4
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Conductor - A wire, cable, or other body or medium suitable for
carrying electric current.
Conduit - Tubing of flexible metal or other material through which
Tnsulated electric wires are run.
Contamination - A general term signifying, the introduction into water
of microorganisms, chemicals, wastes or sewage which renders
the water unfit for its intended use.
Contractor Removal - The disposal of oils, spent solutions, or sludge
by means of a scavenger service.
Conversion Coating - As metal-surface coating consisting of compound
of the base metal.
Cooling Tower - A device used to cool manufacturing process water
before returning the water for reuse.
Copper - A common, reddish, chiefly univalent and bivalent metallic
element that is ductile and malleable and one of the best
conductors of heat and electricity.
Core (Magnetic Core) - A quantity of ferrous material placed in a
coil or transformer to provide a better path than air for
magnetic flux, thereby increasing the inductance of the coil or
increasing the coupling between the windings of a transformer.
Corona Discharge - A discharge of electricity appearing as a bluish-
purple glow on the surface of and adjacent to a conductor when
the voltage gradient exceeds a certain critical value; caused
by ionization of the surrounding air by the high voltage.
Curing - A heating/drying process carried out in an elevated-
temperature enclosure.
Current Carrying Capacity - The maximum current that can be continu-
ously carried without causing permanent deterioration of
electrical or mechanical properties of a device or conductor.
Dag (Aguadag) - A conductive graphite coating on the inner and outer
side walls of some cathode-ray tubes.
Degreasing - The process of removing grease and oil from the surface
of the basis material.
Dewatering - A process in which water is removed from sludge.
12-5
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Dicing - Sawing or otherwise machining a semiconductor wafer into
small squares or dice from which transistors and diodes can be
fabricated.
Die - A tool or mold used to cut shapes to or form impressions on
materials such as metals and ceramics.
Die Cutting (Also Blanking) - Cutting of plastic or metal sheets into
shapes by striking with a punch.
Dielectric - A material that is highly resistant to the conductance
of electricity; an insulator.
Di-n-octyl-phthalate - A liquid dielectric that is presently being
substituted for a PCB dielectric fluid.
Diode (Semiconductor), (Also Crystal Diode, Crystal Rectifier) - A
two-electrode semiconductor device that utilizes the rectifying
properties of a p-n junction or point contact.
Discrete Device - individually manufactured transistor, diode, etc.
Dissolved Solids - Theoretically the anhydrous residues of the dis-
solved constituents in water. Actually the term is defined by
the method used in determination. In water and wastewater
treatment, the Standard Methods tests are used.
Distribution Transformer - An element of an electric distribution
system located near consumers which changes primary distribu-
tion voltage to a lower consumer voltage.
Dopant - An impurity element added to semiconductor materials used
in crystal diodes and transistors.
Dragout - The solution that adheres to the part or workpiece and is
carried past the edge of the tank.
Dry Electrolytic Capacitor - An electrolytic capacitor with a paste
rather than liquid electrolyte.
Drying Beds - Areas for dewatering of sludge by evaporation and
seepage.
Dry Slug - Usually refers to a plastic-encased sintered tantalum
slug type capacitor.
12-6
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Dry Transformer - Having the core and coils neither impregnated with
an insulating fluid nor immersed in an insulating oil.
Effluent - The quantities, rates, and chemical, physical, biological
and other constituents of waters which are discharged from
point sources.
Electrochemical Machining - Shaping of an anode by the following
The anode and cathode are placed close together and
An
process:
electrolyte is pumped into the space between them.
electrical potential is applied to the electrodes causing anode
metal to be dissolved selectively, producing a shaped anode
that complements the shape of the cathode.
Electrolyte - A nonmetallic electrical conductor in which current
is carried by the movement of ions.
Electron Beam Lithography - Similar to photolithography - A fine beam
of electrons is used to scan a pattern and expose an electron-
sensitive resist in the unmasked areas of the object surface.
Electron Discharge Lamp - An electron lamp in which light is produced
by passage of an electric current through a metallic vapor or
gas.
Electron Gun - An electrode structure that produces and may control,
focus, deflect and converge one or more electron beams in an
electron tube.
Electron Tube - An electron device in which conduction of electricity
is accomplished by electrons moving through a vacuum or gaseous
medium within a gas-tight envelope.
Electroplating - The production of a thin coating of one metal on
another by electrode position.
Emissive Coating - An oxide coating applied to an electrode to en-
hance the emission of electrons.
Emulsion Breaking - Decreasing the stability of dispersion of one
liquid in another.
End-of-Pipe Treatment - The reduction and/or removal of pollutants
by chemical treatment just prior to actual discharge.
Epitaxial Layer - A (thin) semiconductor layer having the same
crystaline orientation as the substrate on which it is grown.
12-7
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Epitaxial Transistor - Transistor with one or more" epitaxial layers.
Equalization - The process whereby waste streams from different
sources varying in pH, chemical constituents, and flow rates
are collected in a common container. The effluent stream from
this equalization tank will have a fairly constant flow and pH
level, and will contain a homogeneous chemical mixture. This
tank will help to prevent unnecessary shock to the waste
treatment system.
Etch - To corrode the surface of a metal in order to reveal its
composition and structure.
Extrusion - Forcing the carbon-binder-mixture through a die under
extreme pressure to produce desireable shapes and characteris-
tics of the piece.
Field-effect Transistors - Transistors made by the metal-oxide-semi-
conductor (MOS) technique, differing from bipolar ones in that
only one kind of charge carrier is active in a single device.
Those that employ electrons are called n-MOS transistors; those
that employ holes are p-MOS transistors.
Filament - (1) Metallic wire which is heated in an incandescent lamp
to produce light by passing an electron current through it.
(2) A cathode in a fluorescent lamp that emits electrons when
electric current is passed through it.
Filtering Capacitor - A capacitor used in a power-supply filter
system to provide a low-reactance path for alternating currents
and thereby suppress ripple currents, without affecting direct
currents.
Fixed Capacitor - A capacitor having a definite capacitance value
that cannot be adjusted.
Float Gauge - A device for measuring the elevation of the surface of
a liquid, the actuating element of which is a buoyant float
that rests on the surface of the liquid and rises or falls with
it. The elevation of the surface is measured by a chain or
tape attached to the float.
Floe - A very fine, fluffy mass formed by the aggregation of fine
suspended particles.
Flocculation - In water and wastewater treatment, the agglomeration
of colloidal and finely divided suspended matter after coagula-
tion by gentle stirring by either mechanical or hydraulic
12-8
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means. In biological wastewater treatment where coagulation is
not used, agglomeration may be accomplished biologically.
Flocculator - An apparatus designed for the formation of floe in
water or sewage.
Flow-proportioned Sample - A sampled stream whose pollutants are
apportioned to contributing streams in proportion to the flow
rates of the contributing streams.
Fluorescent Lamp - An electric discharge lamp in which phosphor
materials transform ultraviolet radiation from mercury vapor
ionization to visible light.
Forming - Application of voltage to an electrolytic capacitor,
electrolytic rectifier or semiconductor device to produce a
desired permanent change in electrical characteristics as part
of the manufacturing process.
Frit Seal - A seal made by fusing together metallic powders with a
glass binder for such applications as hermatically sealing
ceramic packages for integrated circuits.
Funnel - The rear, funnel-shaped portion of the glass enclosure of
a cathode ray tube.
Fuse - Overcurrent protective device with a circuit-opening fusible
part that would be heated and severed by overcurrent passage.
Gate - One of the electrodes in a field effect transistor.
Getter - A metal coating inside a lamp which is activated by an
electric current to absorb residual water vapor and oxygen.
Glass - A hard, amorphous, inorganic, usually transparent, brittle
substance made by fusing silicates, and sometimes borates and
phosphates, with certain basic oxides and then rapidly cooling
to prevent crystallization.
Glow Lamp - An electronic device, containing at least two electrodes
and an inert gas, in which light is produced by a cloud of
electrons close to the negative electrode when a voltage is
-applied between the electrodes.
Grab Sample - A single sample of wastewater taken at an "instant
time.
in
12-9
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Graphite - A soft black lustrous carbon that conducts electricity
and is a constituent of coal, petroleum, asphalt, limestone,
etc.
Grease - In wastewater, a group of substances including fats, waxes,
Free fatty acids, calcium and magnesium soaps, mineral oil and
certain other nonfatty materials. The type of solvent and
method used for extraction should be stated for quantification.
Grease Skimmer - A device for removing grease or scum from the sur-
face of wastewater in a tank.
Green Body - An unbaked carbon rod or piece that is usually soft and
quite easily broken.
Grid - An electrode located between the cathode and anode of an
electron tube, which has one or more openings through which
electrons or ions can pass, and which controls the flow of
electrons from cathode to anode.
Grinding - The process of removing stock from a workpiece by the use
of abrasive grains held by a rigid or semi-rigid binder.
Hardness - A characteristic of water, imparted by calcium, magnesium,
and ion salts such as bicarbonates, carbonates, sulfates,
chlorides, and nitrates. These cause curdling of soap, deposi-
tion of scale in boilers, damage in some industrial processes
and sometimes objectionable taste. Hardness may be determined
by a standard laboratory procedure or computed from the amounts
of calcium and magnesium as well as iron, aluminum, manganese,
barium, strontium, and zinc, and is expressed as equivalent
calcium carbonate.
Heavy Metals - A general name given to the ions of metallic elements
such as copper, zinc, chromium, and nickel. They are normally
removed from wastewater by an insoluble precipitate (usually a
metallic hydroxide).
Holding Tank - A reservoir to contain preparation materials so as to
be ready for immediate service.
Hybrid Integrated Circuits - A circuit that is part integrated and
part discrete.
Impact Extrusion - A cold extrusion process for producing tubular
components by striking a slug of the metal, which has been
placed in the cavity of the die, with a punch moving at high
velocity.
12-10
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Impregnate - To force a liquid substance into the spaces of a porous
solid in order to change its properties.
Incandescent Lamp - An electric lamp producing light in which a
metallic filament is heated white-hot in a vacuum by passage of
an electric current through it.
Industrial Wastes - The liquid wastes from industrial processes as
distinct from domestic or sanitary wastes.
Influent - water or other liquid, either raw or partly treated, flow-
ing into a reservoir basin or treatment plant.
In-Process Control Technology - The regulation and conservation of
chemicals and rinse water at their point of use as opposed to
end-of-pipe treatment.
Insulating Paper - A standard material for insulating electrical
equipment, usually consisting of bond or kraft paper coated
with black or yellow insulating varnish on both sides.
Insulation (Electrical insulation) - A material having high elec-
trical resistivity and therefore suitable for separating
adjacent conductors in an electric circuit or preventing
possible future contact between conductors.
Insulator - A nonconducting support for an electric conductor.
Integrated Circuit - Assembly of electronic devices interconnected
into circuits.
interleaved Winding - An arrangement of winding coils around a
transformer core in which the coils are wound in the form of a
disk, with a group of disks for the low-voltage windings
stacked alternately with a group of disks for the high-voltage
windings.
Intermittent Filter - A natural or artificial bed of sand or other
fine-grained material onto which sewage is intermittently
flooded and through which it passes, with time allowed for
filtration and the maintenance of aerobic conditions.
Ion Exchange - A reversible chemical reaction between a solid (ion
exchanger) and a fluid {usually a water solution) by means of
which ions may be interchanged from one substance to another.
The superficial physical structure of the solid is not affected,
Ion Exchange Resins - Synthetic resins containing active groups
(usually sulfonic, carboxylic, phenol, or substituted amino
12-11
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groups) that give the resin the ability to combine with or
exchange ions with a solution.
ion implantation - A process of introducing impurities into the near
surface regions of solids by directing a beam of ions at the
solid.
Junction - A region of transition between two different semiconduc-
ting regions in a semiconductor device such as a p-n junction,
or between a metal and a semiconductor.
Junction Box - A protective enclosure into which wires or cables are
led and connected to form joints.
Knife Switch - Form of switch where moving blade enters stationary
contact clips.
Klystron - An evaculated electron-beam tube in which an initial velo-
city modulation imparted to electrons in the beam results
subsequently in density modulation of the beam; used as an
amplifier in the microwave region or as an oscillator.
Lagoon - A man-made pond or lake for holding wastewater for the re-
moval of suspended solids. Lagoons are also used as retention
ponds after chemical clarification to polish the effluent and
to safeguard against upsets in he clarifier; for stabilization
of organic matter by biological oxidation; for storage of
sludge; and for cooling of water.
Landfill - The disposal of inert, insoluble waste solids by dumping
at an approved site and covering with earth.
Lapping - The mechanical abrasion or surface planing of the semicon-
ductor wafer to produce desired surface and wafer thickness.
Lime - Any of a family of chemicals consisting essentially of calcium
hydroxide made from limestone (calcite) which is composed
almost wholly of calcium carbonates or a mixture of calcium and
magnesium carbonates.
Limiting Orifice - A device that limis flow by constriction to a
relatively small area. A constant flow can be obtained over a
wide range of upstream pressures.
Machining - The process of removing stock from a workpiece by forcing
a cutting tool through the workpiece and removing a chip of
basis material. Machining operatings such as tuning, milling,
drilling, boring, tapping, planing, broaching, sawing and
cutoff, shaving, threading, reaming, shaping, slotting,
hobbing, filling, and chambering are included in this
definition.
12-12
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Magnaflux Inspection - Trade name for magnetic particle test.
Make-up Water - Total amount of water used by any process/process
step.
Mandrel - A metal support serving as a core around which the metals
are wound and anealled to form a central hole.
Mask (Shadow Mask) - Thin sheet steel screen with thousands of aper-
tures through which electron beams pass to a color picture tube
screen. The color of an image depends on the balance from each
of three different electron beams passing through the mask.
Metal Oxide Semiconductor Device - A metal insulator semiconductor
structure in which the insulating layer is an oxide of the
substrate material; for a silicon substrate, the insulating
layer is silicon dioxide (SiC>2) •
Mica - A group of aluminum silicate minerals that are characterized
by their ability to split into thin, flexible flakes because of
their basal cleavage.
Miligrams Per Liter (mg/1) - This is a weight per volume designation
used in water and wastewater analysis.
Mixed Media Filtration - A filter which uses two or more filter mat-
erials of differing specific gravities selected so as to
produce a filter uniformly graded from coarse to fine.
MOS - (See Metal Oxide Semiconductor).
Mount Assembly - Funnel neck ending of picture tube holding electron
gun{s).
National Pollutant Discharge Elimination System (NPDES) - The federal
mechanism for regulating point source discharge by means of
permits.
Neutralization - Chemical addition of either acid or base to a
solution such that the pH is adjusted to approximately 7.
Noncontact Cooling Water - Water used for cooling which does not
come into direct contact with any raw material, intermediate
product, waste product or finished product.
Oil-Filled Capacitor - A capacitor whose conductor and insulating
elements are immersed in an insulating fluid that is usually,
but not necessarily, oil.
12-13
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Outfall - The point or location where sewage or drainage discharges
from a sewer, drain, or conduit.
Oxide Mask - Oxidized layer of silicon wafer through which "windows"
are formed which will allow for dopants to be introduced into
the silicon.
Panel - The front, screen portion of the glass enclosure of a cathode
ray tube.
PCS (Polychlorinated Biphenyl) - A colorless liquid, used as an in-
sulating fluid in electrical equipment. (The future use of PCS
for new transformers was banned by the Toxic substances Control
Act of October 1976) .
- The negative of the logarithm of the hydrogen ion concentration.
Neutral water has a pH value of 7. At pH lower than 7, a
solution is acidic. At pH higher than 7, a solution is
alkaline.
pH Adjustment - A means of maintaining the optimum pH through the use
of chemical additives. Can be manual, automatic, or automatic
with flow corrections.
Phase - one of the separate circuits or windings of a polyphase
system, machine or other appartus.
Phase Assembly - The coil-core assembly of a single phase of a trans-
former.
Phosphate Coating - A conversion coating on metal, usually steel,
produced by dipping it into a hot aqueous solution of iron,
zinc, or manganese phosphate.
Phosphor - Crystalline inorganic compounds that produce light when
excited by ultraviolet radiation.
Photolithography - The process by which a microscopic pattern is
tranferred from a photomask to a material layer (e.g., Si02)
in an actual circuit.
Photomask - A film or glass negative that has many high-resolution
images, used in the production of semiconductor devices and
integrated circuits.
Photon - A quantum of electromagnetic energy.
Photoresist - A light-sensitive coating that is applied to a sub-
strate or board, exposed, and developed prior to chemical
etching; the exposed areas serve as a mask for selective
etching.
12-14
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Picture Tube - A cathode ray tube used in television receivers to
produce an image by varying the electron beam intensity as the
beam scans a fluorescent screen.
Plate - (1) Preferably called the anode. The principal electrode to
which the electron stream is attracted in an electron tube.
(2) One of the conductive electrodes in a capacitor.
Polar Capacitor - An electrolytic capacitor having an oxide film on
only one foil or electrode which forms the anode or positive
terminal.
Pole Type Transformer - A transformer suitable for mounting on a
pole or similar structure.
Poling - A step in the production of ceramic piezoelectric bodies
which orients the oxes of the crystallites in the preferred
direction.
Polishing - The process of removing stock from a workpiece by the
action of loose or loosely held abrasive grains carried to the
workpiece by a flexible support. Usually, the amount of stock
removed in a polishing operation is only incidental to
achieving a desired surface finish or appearance.
Pollutant - The term "pollutant" means dredged spoil,, solid wastes,
incinerator residue, sewage, garbage, sewage sludge, munitions,
chemical wastes, biological materials, radioactive materials,
heat, wrecked or discarded equipment, rock, sand, cellar dirt
and industrial, municipal and agricultural waste discharged
into water.
Pollutant Parameters - Those constituents of wastewater determined
to be detrimental and, therefore, requiring control.
Pollution Load - A measure of the unit mass of a wastewater in terms
of its solids or oxygen-demanding characteristics, or in terms
of harm to receiving waters.
Polyelectrolytes - Synthetic or natural polymers containing ionic
constituents, used as a coagulant or a coagulant aid in water
and wastewater treatment.
Power Regulators - Transformers used to maintain constant output
current for changes in temperature output load, line current,
and time.
12-15
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Power Transformer ^ Transformer used at a generating station to step
up the initial voltage to high levels for transmission.
Prechlorination - (1) Chlorination of water prior to filtration.
(2) Chlorination of sewage prior to treatment.
precipitate - The discrete particles of material settled from a
liquid solution.
Pressure Filtration - The process of solid/liquid phase separation
effected by passing the more permeable liquid phase through a
mesh which is impenetrable to the solid phase.
Pretreatment - Any wastewater treatment process used to reduce
pollution load partially before the wastewater is introduced
into a main sewer system or delivered to a treatment plant for
substantial reduction of the pollution load.
Primary Feeder Circuit (Substation) Transformers - These transformers
(at substations) are used to reduce the voltage from the
subtransmission level to the primary feeder level.
Primary Treatment - A process to remove substantially all floating
and settleable solids in wastewater and partially to reduce the
concentration of suspended solids.
Primary Winding - Winding on the supply (i.e. input) side of a trans-
former.
Priority Pollutant - The 129 specific pollutants established by the
EPA from the 65 pollutants and classes of pollutants as
outlined in the consent decree of June 8, 1976.
Process Wastewater - Any water which, during manufacturing or
processing, comes into direct contact with or results from the
production or use of any raw materials, intermediate product,
finished product, by-product, or waste product.
Process Water - Water prior to its direct contact use in a process
or operation. (This water may be any combination of a raw
water, service water, or either process wastewater or treatment
facility effluent to be recycled or reused.)
Pyrolysis - The breaking apart of complex molecules into simpler
units by the use of heat, as in the pyrolysis of heavy oil to
make gasoline.
12-16
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Quenching - Shock cooling by immersion of liquid or molten material
in
a cooling medium (liquid or gas), used in metallurgy, plastics
forming, and petroleum refining.
Raceway - A channel used to hold and protect wires, cables or
busbars.
Rapid Sandfilter - A filter for the purification of water where water
which has been previously treated, usually by coagulation and
sedimentation, is passed through a filtering medium consisting
of a layer of sand or prepared anthracite coal or other
suitable material, usually from 24 to 30 inches thick and
resting on a supporting bed of gravel or a porous medium such
as carborundum. The filtrate is removed by a drain system.
The filter is cleaned periodically by reversing the flow of the
water through the filtering medium. Sometimes supplemented by
mechanical or air agitation during backwashing to remove mud
and other impurities.
Raw Wastewater - Plant water prior to any treatment or use.
Rectifier - (1) A device for converting alternating current into
direct current. (2) A nonlinear circuit component that,
ideally, allows current to flow in one direction unimpeded but
allows no current to flow in the other direction.
Recycled Water - Process Wastewater or treatment facility effluent
which is recirculated to the same process.
Resistor - A device designed to provide a definite amount of
resistance, used in circuits to limit current flow or to
provide a voltage drop.
Retention Time - The time allowed for solids to collect in a
Theoretically retention time is equal to the
The actual
Also,
settling tank.
volume of the tank divided by the flow rate.
retention time is determined by the purpose of the tank.
the design residence time in a tank or reaction vessel which
allows a chemical reaction to go to completion, such as the
reduction of hexavalent chromium or the destruction of cyanide.
Reused Water - Process wastewater or treatment facility effluent
which is further used in a different manufacturing process.
Rinse - Water for removal of dragout by dipping, spraying, fogging
etc.
12-17
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Sanitary Sewer - A sewer that carriers liquid and water wastes from
residences, commercial buildings, industrial plants, and
institutions together with ground, storm, and surface waters
that are not admitted intentionally.
Sanitary Water - The supply of water used for sewage transport and
the continuation of such effluents to disposal.
Secondary Settling Tank - A tank through which effluent from some
prior treatment process flows for the purpose of removing
settleable solids.
Secondary Wastewater Treatment - The treatment of wastewater by
biological methods after primary treatment by sedimentation.
Secondary Winding - Winding on the load (i.e. output) side of a
transformer.
Sedimentation - Settling of matter suspended in water by gravity.
It is usually accomplished by reducing the velocity of the
liquid below the point at which it can transport the suspended
material.
Semiconductor - A solid crystalline material whose electrical conduc-
tivity is intermediate between that of a metal and an insulator.
Settleable Solids - (1) That matter in wastewater which will not stay
in suspension during a preselected settling period, such as one
hour, but either settles to the bottom or floats to the top.
(2) In the Imhoff cone test, the volume of matter that settles
to the bottom of the cone in one hour.
Sewer - A pipe or conduit, generally closed, but normally not flowing
full, for carrying sewage and other waste liquids.
Silvering - The deposition of thin films of silver on glass, etc.
carried by one of several possible processes.
Skimming Tank - A tank so designed that floating matter will rise and
remain on the surface of the wastewater until removed, while
the liquid discharges continuously under walls or scum boards.
Sludge - The solids (and accompanying water and organic matter)
which are separated from sewage or industrial wastewater.
Sludge Cake - The material resulting from air drying or dewatering
sludge (usually forkable or spadable).
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Sludge Disposal - The final disposal of solid wastes.
Sludge Thickening - The increase in solids concentration of sludge
in a sedimentation or digestion tank.
Snubber - Shock absorber.
Soldering - The process of joining metals by flowing a thin
(capillary thickness) layer of nonferrous filler metal into the
space between them. Bonding results from the intimate contact
produced by the dissolution of a small amount of base metal in
the molten filler metal, without fusion of the base metal.
Solvent - A liquid capable of dissolving or dispersing one or more
other substances.
Solvent Degreasing - The removal of oils and grease from a workpiece
using organic solvents or solvent vapors.
Sputtering - A process to deposit a thin layer of metal on a solid
surface in a vacuum. Ions bombard a cathode which emits the
metal atoms.
Stacked Capacitor - Device containing multiple layers of dielectric
and conducting materials and designed to store electrical
charge.
Stamping - Almost any press operations including blanking, shearing,
hot or cold forming, drawing, blending, or coining.
Steel - An iron-based alloy, malleable under proper conditions,
containing up to about 2% carbon.
Step-Down Transformers - (Substation) - A transformer in which the
AC voltages of the secondary windings are lower than those
applied to the primary windings.
Step-Up Transformer - Transformer in which the energy transfer is
from a low-voltage primary (input) winding to a high-voltage
secondary (output) winding or windings.
Studs - Metal pins in glass of picture tube onto which shadow mask
is hung.
Substation - Complete assemblage of plant, equipment, and the
necessary buildings at a place where electrical energy is
received (from one or more power-stations) for conversion (e.g.
from AC to DC by means of rectifiers, rotary converters), for
stepping-up or down by means of transformers, or for control
(e.g. by means of switch-gear, etc.).
12-19
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Subtransmission (Substation) Transformers - At the end of a trans-
mission line, the voltage is reduced to the subtransmission
level (at substations) by subtransmission transformers.
Suspended Solids - (1) Solids that are either floating or in suspen-
sion in water, wastewater, or other liquids, and which are
largely removable by laboratory filtering. (2) The quantity of
material removed from wastewater in a laboratory test, as
prescribed in "Standard Methods for the Examination of Water
and Wastewater" and referred to as non-filterable residue.
Tantalum - A lustrous, platinum-gray ductile metal used in making
dental and surgical tools, penpoints, and electronic equipment.
Tantalum Foil - A thin sheet of tantalum, usually less than 0.006
inch thick.
Terminal - A screw, soldering lug, or other point to which electric
connections can be made.
Testing - A procedure in which the performance of a product is
measured under various conditions.
Thermoplastic Resin - A plastic that solidifies when first heated
under pressure, and which cannot be remelted or remolded
without destroying its original characteristics; examples are
epoxides, melamines, phenolics and ureas.
Transformer - A device used to transfer electric energy, usually
that of an alternating current, from one circuit to another;
especially, a pair of multiply-wound, inductively coupled wire
coils that effect such a transfer with a change in voltage,
current, phases, or other electric characteristics.
Transistor - An active component of an electronic circuit consisting
of a small block of semiconducting material to which at least
three electrical contacts are made; used as an amplifier,
detector, or switch.
Trickling Filter - A filter consisting of an artificial bed of coarse
material, such as broken stone, clinkers, slats, or brush over
which sewage is distributed and applied in drops, films, or
spray, from troughs, drippers, moving distributors or fixed
nozzles and through which it trickles to the underdrain giving
opportunity for the formation of zoogleal slimes which clarify
the oxidized sewage.
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Trimmer Capacitors - These are relatively small variable capacitors
used in parallel with larger variable or fixed capacitors to
permit exact adjustment of the capacitance of the parallel
combination.
vacuum Filter - A filter consisting of a cylindrical drum mounted on
horizontal axis, covered with a filter cloth revolving with a
partial submergence in liquid. A vacuum is maintained under
the cloth for the larger part of a revolution to extract
moisture and the cake is scraped off continuously.
Vacuum Metalizing - The process of coating a workpiece with metal
by flash heating metal vapor in a high-vacuum chamber
containing the workpiece. The vapor condenses on all exposed
surfaces.
Vacuum Tube - An electron tube vacuated to such a degree that its
electrical characteristics are essentially unaffected by the
presence of residual gas or vapor.
Variable Capacitor - A device whose capacitance can be varied
continuously by moving one set of metal plates with respect to
another.
Voltage Breakdown - The voltage necessary to cause insulation
failure.
Voltage Regulator - Like a transformer, it corrects changes in
current to provide continuous, constant current flow.
Welding - The process of joining two or more pieces of material
by applying heat, pressure or both, with or without filler
material, to produce a localized union through fusion or
recrystallization across the interface.
Wet Air Scrubber - Air pollution control device which uses a liquid
or vapor to absorb contaminants and which produces a wastewater
stream.
Wet Capacitor - (See oil-filled capacitor).
Wet Slug Capacitor - Refers to a sintered tantalum capacitor where
the anode is placed in a metal can, filled with an electrolyte
and then sealed.
Wet Tantalum Capacitor - A polar capacitor the cathode of which is a
liquid electrolyte (a highly ionized acid or salt solution).
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Wet Transformer - Having the core and coils immersed in an insulating
oil.
Yoke - A set of coils placed over the neck of a magnetically
deflected cathode-ray tube to deflect the electron beam
horizontally and vertically when suitable currents are passed
through the coils.
*U.S. GOVERNMENT PRINTING OFFICE i I 982-0-361 -OttV1* 59
12-22
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